Hydrochloric acid type p-ito etching solution, preparation method thereof and application thereof

Abstract

The application discloses a hydrochloric acid type P-ITO etching solution and a preparation method and application thereof, relates to the technical field of liquid crystal panel etching solutions, and the hydrochloric acid type P-ITO etching solution comprises the following components in percentage by mass: 20-24% of a first inorganic acid aqueous solution, 5-7% of a second inorganic acid, 0.1-0.5% of a metal corrosion inhibitor, 0.001-0.1% of an inorganic chloride, and the balance of water; the first inorganic acid at least comprises hydrochloric acid; the second inorganic acid at least comprises acetic acid; and the concentration of the first inorganic acid in the first inorganic acid aqueous solution is greater than or equal to 40 wt%. The hydrochloric acid type P-ITO etching solution has the advantages of low cost, mild etching reaction, uniform etching, no obvious edge sawtooth, no ITO crystal residue, no damage to metal Mo, no pollution elements such as phosphorus, and green environmental protection.

Description

Technical Field

[0001] This application belongs to the field of liquid crystal panel etching solution technology, and particularly relates to a hydrochloric acid type P-ITO etching solution, its preparation method and its application. Background Technology

[0002] Indium Tin Oxide (ITO) is an inorganic composite material, typically composed of 90% indium oxide (In₂O₃) and 10% tin oxide (SnO₂). ITO thin films are n-type semiconductor materials with high conductivity, high visible light transmittance, high mechanical hardness, and high chemical stability. This combination of transparency and conductivity is difficult for other materials to possess simultaneously, making ITO the preferred material for transparent conductive films. It is widely used in various optoelectronic devices requiring transparent electrodes, such as displays (LCD / OLED), touch panels, and solar cells.

[0003] With the rapid development of the display device industry, new requirements have been placed on the performance characteristics of ITO thin films. ITO thin films with different performance characteristics also require compatible ITO etching solutions, which presents new challenges for the research and development of ITO etching solutions.

[0004] For widely used thin-film substrates such as α-ITO, P-ITO, Cu / ITO, and ITO-Ag-ITO, the commonly used ITO etching solutions in existing technologies mainly include aqua regia systems, oxalic acid systems, and sulfonic acid systems. Among these, the aqua regia etching solution is a strong acid solution composed of concentrated hydrochloric acid and concentrated nitric acid in a certain proportion. It has strong corrosiveness, resulting in a violent etching reaction and difficulty in controlling the etching angle, leading to unsatisfactory etching effects on various ITO thin films. Furthermore, in the oxalic acid etching solution, ITO indium complexes with oxalic acid to form indium oxalate. With long-term use, indium oxalate crystallizes and deposits, affecting the normal operation of the equipment and subsequent etching results. Summary of the Invention

[0005] The purpose of this application is to provide a hydrochloric acid-based P-ITO etching solution, its preparation method, and its application, aiming to solve the aforementioned problems existing in the aqua regia system and oxalic acid system of existing ITO etching solutions.

[0006] To achieve the above-mentioned objectives, the technical solution adopted in this application is as follows:

[0007] In a first aspect, this application provides a hydrochloric acid-based P-ITO etching solution, comprising the following components by mass percentage:

[0008] 20-24% aqueous solution of primary inorganic acid, 5-7% secondary inorganic acid, 0.1-0.5% metal corrosion inhibitor, 0.001-0.1% inorganic chloride, balance being water;

[0009] The first inorganic acid includes at least hydrochloric acid; the second inorganic acid includes at least acetic acid;

[0010] The concentration of the first inorganic acid in the first inorganic acid aqueous solution is ≥40wt%.

[0011] As one possible design, the metal corrosion inhibitor is at least one of benzotriazole, 5-aminotetrazole, 1,2,4-triazole, benzopyrrole, 3-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, and hydroxymethylbenzotriazole.

[0012] As one possible design, the inorganic chloride is at least one of ferric chloride, ammonium chloride, and potassium chloride.

[0013] As one possible design, the first inorganic acid may also include nitric acid and / or sulfuric acid.

[0014] As one possible design, the second inorganic acid also includes at least one of carbonic acid, phosphoric acid, formic acid, and acetic acid.

[0015] As one possible design, the hydrochloric acid-based P-ITO etching solution comprises the following components by mass percentage:

[0016] 22% hydrochloric acid, 6% acetic acid, 0.3% benzotriazole, 0.05% inorganic chloride, balance water;

[0017] As one possible design, the hydrochloric acid-based P-ITO etching solution comprises the following components by mass percentage:

[0018] 22% hydrochloric acid, 6% acetic acid, 0.3% benzotriazole, 0.05% 5-aminotetrazole, 0.05% inorganic chloride, balance water.

[0019] Secondly, this application provides a method for preparing a hydrochloric acid-based P-ITO etching solution, comprising the following steps:

[0020] A portion of the first inorganic acid aqueous solution was added to water for dilution, while controlling the temperature to ≤40℃;

[0021] The diluted first inorganic acid solution was mixed with the metal corrosion inhibitor and stirred to obtain mixture 1;

[0022] Dilute the remaining aqueous solution of the first inorganic acid in water, keeping the temperature ≤40℃;

[0023] Mix the diluted first inorganic acid solution with mixture 1 until homogeneous, then add the second inorganic acid and mix until homogeneous, and finally add the inorganic chloride and mix until homogeneous.

[0024] As one possible design, the mixing process employs a pneumatic circulation method.

[0025] The beneficial effects of this invention are as follows:

[0026] 1. The hydrochloric acid-based P-ITO etching solution of the present invention uses hydrochloric acid and acetic acid as the main components, and metal corrosion inhibitors and inorganic chlorides as additives. It has low cost, mild etching reaction, uniform etching, no obvious edge jaggedness (CD Loss is 0.15μm to 0.25μm, compatible with various film thicknesses, meeting customer needs), no ITO crystal residue, does not damage metal Mo, does not contain polluting elements such as phosphorus, and is green and environmentally friendly.

[0027] 2. Compared with the "one-step" mixed preparation method, the preparation method disclosed in this invention produces a uniform and stable ITO etching solution that is not prone to crystallization and stratification. It also has a short total preparation time, does not clog the mixing vessel and its accessories, and saves manufacturing costs. Attached Figure Description

[0028] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0029] Figure 1 This is Example 1 in the embodiments of this application using P-ITO. Topographic image of the etched substrate;

[0030] Figure 2 This is Example 1 in the embodiments of this application using P-ITO. Image showing the corrosion status of the etched substrate;

[0031] Figure 3 This is Example 1 in the embodiments of this application using P-ITO. SEM image of the etched substrate;

[0032] Figure 4 This is Example 1 in the embodiments of this application, using α-ITO. Topographic image of the substrate after ACT etching;

[0033] Figure 5 This is Example 1 in the embodiments of this application, using α-ITO. Topographic image of the substrate after ACR etching;

[0034] Figure 6 This is Example 2 in the embodiments of this application, using P-ITO. SEM image of the etched substrate;

[0035] Figure 7 This is Example 3 in the embodiments of this application, using P-ITO. SEM image of the etched substrate;

[0036] Figure 8 This is Example 4 in the embodiments of this application, using P-ITO. SEM image of the etched substrate;

[0037] Figure 9 This is Example 5 in the embodiments of this application, using P-ITO. SEM image of the etched substrate;

[0038] Figure 10 This is Example 6 in the embodiments of this application, using P-ITO. SEM image of the etched substrate;

[0039] Figure 11 This is Example 7 in the embodiments of this application, using P-ITO. SEM image of the etched substrate;

[0040] Figure 12 This is Example 8 in the embodiments of this application, using P-ITO. SEM image of the etched substrate;

[0041] Figure 13 Comparative Example 1 in the embodiments of this application is in P-ITO SEM image of the etched substrate;

[0042] Figure 14 Comparative Example 2 in the embodiments of this application is in P-ITO SEM image of the etched substrate;

[0043] Figure 15 Comparative Example 3 in the embodiments of this application is in P-ITO SEM image of the etched substrate;

[0044] Figure 16 Comparative Example 4 in this application embodiment is in P-ITO SEM image of the etched substrate;

[0045] Figure 17 Comparative Example 5 in the embodiments of this application is in P-ITO SEM image of the etched substrate;

[0046] Figure 18 Comparative Example 6 in the embodiments of this application is in P-ITO SEM image of the etched substrate;

[0047] Figure 19 Comparative Example 7 in the embodiments of this application is in P-ITO SEM image of the etched substrate;

[0048] Figure 20 Comparative Example 8 in the embodiments of this application is in P-ITO SEM image of the etched substrate. Detailed Implementation

[0049] To make the technical problems, technical solutions, and beneficial effects of this application clearer, the following detailed description is provided in conjunction with embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0050] In this application, the term "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects have an "or" relationship.

[0051] In this application, "at least one" means one or more, and "more than one" means two or more. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c", or "at least one of a, b, and c", can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0052] It should be understood that in the various embodiments of this application, the order of the above processes does not imply the order of execution. Some or all steps may be executed in parallel or sequentially. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0053] The terminology used in the embodiments of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of this application. The singular forms “a,” “the,” and “the” used in the embodiments of this application and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise.

[0054] The terms "first" and "second" are used for descriptive purposes only, to distinguish objects, such as substances, from one another, and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. For example, without departing from the scope of the embodiments of this application, "first XX" may also be referred to as "second XX," and similarly, "second XX" may also be referred to as "first XX." Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of that feature.

[0055] The following description is based on specific embodiments.

[0056] Example 1

[0057] This embodiment discloses a hydrochloric acid-based P-ITO etching solution, comprising the following components by mass percentage:

[0058] The mixture consists of 22% hydrochloric acid aqueous solution, 6% acetic acid, 0.3% benzotriazole, 0.05% ferric chloride, and the balance being water; the concentration of the hydrochloric acid aqueous solution is 40 wt%.

[0059] This embodiment also discloses a two-step method for preparing hydrochloric acid-based P-ITO etching solution, as detailed below:

[0060] Step 1: Prepare the dissolving solution for the additives, including the following steps:

[0061] 1) First, add 7% of the weight of pure water to the mixing tank, then slowly add 5% of the weight of hydrochloric acid, keeping the temperature ≤40℃, and mix thoroughly.

[0062] 2) Slowly add benzotriazole, stir and mix evenly to obtain solution 1 for later use;

[0063] Step 2: Prepare the ITO etching solution, including the following steps:

[0064] 1) First, add the remaining amount of pure water to the mixing vessel / tank, then slowly add the remaining amount of hydrochloric acid, controlling the temperature to ≤40℃, and mix thoroughly;

[0065] 2) Add solution 1 obtained in step 1, and circulate it evenly using pneumatic circulation;

[0066] 3) Add acetic acid and ensure uniform pneumatic circulation;

[0067] 4) Add ferric chloride and circulate it evenly with pneumatics to obtain the hydrochloric acid type P-ITO etching solution.

[0068] The hydrochloric acid-based P-ITO etching solution prepared in this embodiment did not exhibit crystallization or stratification when stored at 2-10°C.

[0069] Example 2

[0070] The main difference compared to Example 1 is the mass percentage of each substance; everything else is the same, as detailed below:

[0071] A hydrochloric acid-based P-ITO etching solution comprises the following components by weight percentage:

[0072] The mixture consists of 22% hydrochloric acid aqueous solution, 7% acetic acid, 0.35% benzotriazole, 0.08% ferric chloride, with the balance being water; the concentration of the hydrochloric acid aqueous solution is 40 wt%.

[0073] Example 3

[0074] The main difference compared to Example 1 is the mass percentage of each substance; everything else is the same, as detailed below:

[0075] A hydrochloric acid-based P-ITO etching solution comprises the following components by weight percentage:

[0076] The mixture consists of 24% hydrochloric acid aqueous solution, 7% acetic acid, 0.5% benzotriazole, 0.05% ferric chloride, and the balance being water; the concentration of the hydrochloric acid aqueous solution is 40 wt%.

[0077] Example 4

[0078] The main difference compared to Example 1 is the mass percentage of each substance; everything else is the same, as detailed below:

[0079] A hydrochloric acid-based P-ITO etching solution comprises the following components by weight percentage:

[0080] The mixture consists of 20% hydrochloric acid aqueous solution, 6% acetic acid, 0.20% benzotriazole, 0.03% ferric chloride, and the balance being water; the concentration of the hydrochloric acid aqueous solution is 40 wt%.

[0081] Example 5

[0082] The main difference compared to Example 1 is the mass percentage of each substance; everything else is the same, as detailed below:

[0083] A hydrochloric acid-based P-ITO etching solution comprises the following components by weight percentage:

[0084] 21% hydrochloric acid aqueous solution, 6% acetic acid, 0.40% benzotriazole, 0.05% ferric chloride, balance water;

[0085] The concentration of the hydrochloric acid aqueous solution is 40 wt%.

[0086] Example 6

[0087] The main difference compared to Example 1 is the mass percentage of each substance; everything else is the same, as detailed below:

[0088] A hydrochloric acid-based P-ITO etching solution comprises the following components by weight percentage:

[0089] 23% hydrochloric acid aqueous solution, 5% acetic acid, 0.20% benzotriazole, 0.06% ferric chloride, balance water;

[0090] The concentration of the hydrochloric acid aqueous solution is 40 wt%.

[0091] Example 7

[0092] The main difference compared to Example 1 is the mass percentage of each substance; everything else is the same, as detailed below:

[0093] A hydrochloric acid-based P-ITO etching solution comprises the following components by weight percentage:

[0094] The mixture consists of 22% hydrochloric acid aqueous solution, 6% acetic acid, 0.30% benzotriazole, 0.05% 5-aminotetrazole, 0.05% ferric chloride, with the balance being water; the concentration of the hydrochloric acid aqueous solution is 40 wt%.

[0095] Example 8

[0096] A hydrochloric acid-based P-ITO etching solution comprises the following components by weight percentage:

[0097] The mixture consists of 20% hydrochloric acid aqueous solution, 5% acetic acid, 0.30% benzotriazole, 0.11% 5-aminotetrazole, 0.001% ferric chloride, with the balance being water; the concentration of the hydrochloric acid aqueous solution is 40 wt%.

[0098] Comparative Example 1

[0099] The main difference between Example 1 and Example 2 is the mass percentage of each substance; everything else is the same, as detailed below:

[0100] A P-ITO etching solution comprising the following components by weight percentage:

[0101] The mixture consists of 35% hydrochloric acid aqueous solution, 15% acetic acid, 3% benzotriazole, 0.50% ferric chloride, and the balance being water; the concentration of the hydrochloric acid aqueous solution is 40 wt%.

[0102] Comparative Example 2

[0103] The main difference between Example 1 and Example 2 is the mass percentage of each substance; everything else is the same, as detailed below:

[0104] A P-ITO etching solution comprises the following components by weight percentage: 22% hydrochloric acid aqueous solution, 6% acetic acid, and the balance being water; the concentration of the hydrochloric acid aqueous solution is 40 wt%.

[0105] Comparative Example 3

[0106] The main difference between Example 1 and Example 2 is the mass percentage of each substance; everything else is the same, as detailed below:

[0107] A P-ITO etching solution comprising the following components by weight percentage:

[0108] The mixture consists of 35% hydrochloric acid aqueous solution, 6% acetic acid, 0.3% benzotriazole, and the balance being water; the concentration of the hydrochloric acid aqueous solution is 40 wt%.

[0109] Comparative Example 4

[0110] The main difference between Example 1 and Example 2 is the mass percentage of each substance; everything else is the same, as detailed below:

[0111] A P-ITO etching solution comprising the following components by weight percentage:

[0112] The mixture consists of 22% hydrochloric acid aqueous solution, 6% acetic acid, 0.30% 5-aminotetrazole, 0.05% HNO3 aqueous solution, with the remainder being water; the concentration of the hydrochloric acid aqueous solution is 40 wt%, and the concentration of the nitric acid aqueous solution is 70 wt%.

[0113] Comparative Example 5

[0114] The main difference between Example 1 and Example 2 is the mass percentage of each substance; everything else is the same, as detailed below:

[0115] A P-ITO etching solution comprising the following components by weight percentage:

[0116] The mixture consists of 19% hydrochloric acid aqueous solution, 3% acetic acid, 0.30% benzotriazole, 0.05% ferric chloride, and the balance being water; the concentration of the hydrochloric acid aqueous solution is 40 wt%.

[0117] Comparative Example 6

[0118] The main difference between Example 1 and Example 2 is the mass percentage of each substance; everything else is the same, as detailed below:

[0119] A P-ITO etching solution comprising the following components by weight percentage:

[0120] The mixture consists of 22% hydrochloric acid aqueous solution, 6% acetic acid, 0.5% glutamic acid, 0.05% ferric chloride, and the balance being water; the concentration of the hydrochloric acid aqueous solution is 40 wt%.

[0121] Comparative Example 7

[0122] The main difference between Example 1 and Example 2 is the mass percentage of each substance; everything else is the same, as detailed below:

[0123] A P-ITO etching solution comprising the following components by weight percentage:

[0124] The mixture consists of 22% hydrochloric acid aqueous solution, 0.30% benzotriazole, 6% HNO3, 0.08% ferric chloride, with the balance being water; the concentration of the hydrochloric acid aqueous solution is 40 wt%.

[0125] Comparative Example 8

[0126] The main difference between Example 1 and Example 2 is the mass percentage of each substance; everything else is the same, as detailed below:

[0127] A P-ITO etching solution comprising the following components by weight percentage:

[0128] The solution contains 6% acetic acid, 0.30% benzotriazole, 0.05% ferric chloride, and 22% H2SO4 aqueous solution, with the balance being water; the concentration of the hydrochloric acid aqueous solution is 40 wt%, and the concentration of the sulfuric acid aqueous solution is 98 wt%.

[0129] Comparative Example 9

[0130] The main difference between Example 1 and Example 2 is that the mass percentages of each substance are the same, but the preparation methods are different, as detailed below:

[0131] The preparation method of hydrochloric acid-based P-ITO etching solution includes the following steps:

[0132] 1) First, add pure water to the mixing tank, then slowly add hydrochloric acid, keeping the temperature ≤40℃, and mix thoroughly;

[0133] 2) Slowly add benzotriazole, stir and mix evenly to obtain solution 1 for later use;

[0134] 3) Circulate solution 1 evenly using pneumatic circulation;

[0135] 4) Add acetic acid and ensure uniform pneumatic circulation;

[0136] 5) Add ferric chloride and circulate it evenly with pneumatics to obtain the hydrochloric acid type P-ITO etching solution.

[0137] The hydrochloric acid-based P-ITO etching solution prepared in this comparative example exhibited crystallization and stratification when stored at 2-10℃.

[0138] Comparative Example 10

[0139] Compared with Comparative Example 9, the main difference lies in the mass percentage of each substance; otherwise, they are the same, as detailed below:

[0140] This comparative example discloses a hydrochloric acid-based P-ITO etching solution, comprising the following components by mass percentage:

[0141] The mixture consists of 35% hydrochloric acid aqueous solution, 15% acetic acid, 3% benzotriazole, 0.50% ferric chloride, and the balance being water; the concentration of the hydrochloric acid aqueous solution is 40 wt%.

[0142] The hydrochloric acid-based P-ITO etching solution prepared in this comparative example exhibited crystallization and stratification when stored at 2-10℃.

[0143] The hydrochloric acid-based P-ITO etching solutions obtained in Examples 1-8 and Comparative Examples 1-9 were used for etching on the substrate materials shown in Table 1. The etching method can be as follows:

[0144] 1) Immerse the substrate with the P-ITO film in the etching solution (Dip mode), or spray or spray the etching solution onto the substrate with the P-ITO film (Spray mode). Adjust the etching time according to the substrate thickness of the P-ITO film, the pressure of the sprayed etching solution, and the conveyor belt speed.

[0145] 2) After etching the P-ITO film substrate, rinse it with pure water, dry it with an air knife or nitrogen gun, observe it with SEM and measure and record the CD Loss (critical dimension loss), Taper (etching angle), residue and surface morphology of the P-ITO film after etching.

[0146] Table 1

[0147]

[0148]

[0149] As shown in Table 1, the hydrochloric acid-based P-ITO etching solution disclosed in this invention leaves no residue after etching on various types of P-ITO substrates, does not damage the metal Mo, and has no obvious edge jaggedness (CD Loss is 0.15μm to 0.25μm), and also has a suitable tape.

[0150] Example 1 in P-ITO The morphology of the etched substrate is shown in the figure. Figure 1 As shown in the diagram, the corrosion situation is as follows: Figure 2 As shown, the SEM topography image is as follows: Figure 3 As shown; Example 1 in α-ITO The substrate morphology after ACT etching is shown in the figure. Figure 4 As shown; Example 1 in α-ITO The substrate morphology after ACR etching is shown in the image below. Figure 5 As shown.

[0151] The SEM morphology of the substrates after etching in Examples 2-7 and Comparative Examples 1-8 is as follows: Figure 6-20 As shown.

[0152] Depend on Figure 1-5As shown, the hydrochloric acid-based etching solution disclosed in this invention is suitable for etching on P-ITO substrates, but not for etching on α-ITO substrates. Hydrochloric acid and acetic acid are essential for the etching effect in the hydrochloric acid-based etching solution disclosed in this invention.

[0153] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A hydrochloric acid-based P-ITO etching solution, characterized in that, Including the following components by mass percentage: 20-24% aqueous solution of primary inorganic acid, 5-7% secondary inorganic acid, 0.1-0.5% metal corrosion inhibitor, 0.001-0.1% inorganic chloride, balance being water; The first inorganic acid is hydrochloric acid; the second inorganic acid is acetic acid; The concentration of the first inorganic acid in the first inorganic acid aqueous solution is ≥40 wt%; The inorganic chloride is at least one of ferric chloride, ammonium chloride, and potassium chloride; The preparation method of the hydrochloric acid type P-ITO etching solution includes: A portion of the first inorganic acid aqueous solution was added to water for dilution, while controlling the temperature to ≤40℃; The diluted first inorganic acid solution was mixed with the metal corrosion inhibitor and stirred to obtain mixture 1; Dilute the remaining aqueous solution of the first inorganic acid in water, keeping the temperature ≤40℃; Mix the diluted first inorganic acid solution with mixture 1 until homogeneous, then add the second inorganic acid and mix until homogeneous, and finally add the inorganic chloride and mix until homogeneous.

2. The hydrochloric acid-based P-ITO etching solution according to claim 1, characterized in that, The metal corrosion inhibitor is at least one of benzotriazole, 5-aminotetrazole, 1,2,4-triazole, benzopyrrole, 3-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, and hydroxymethylbenzotriazole.

3. The hydrochloric acid-based P-ITO etching solution according to claim 1 or 2, characterized in that, The hydrochloric acid-based P-ITO etching solution comprises the following components by mass percentage: 22% hydrochloric acid, 6% acetic acid, 0.3% benzotriazole, 0.05% inorganic chloride, balance water.

4. The hydrochloric acid-based P-ITO etching solution according to claim 1, characterized in that, The hydrochloric acid-based P-ITO etching solution comprises the following components by mass percentage: 22% hydrochloric acid, 6% acetic acid, 0.3% benzotriazole, 0.05% 5-aminotetrazole, 0.05% inorganic chloride, balance water.

5. The hydrochloric acid-based P-ITO etching solution according to claim 1, characterized in that, The mixing process all adopts a pneumatic circulation method.

6. The application of the hydrochloric acid-based P-ITO etching solution according to any one of claims 1-5 in optoelectronic devices, characterized in that, The optoelectronic device includes a display screen, a touch panel, and / or a solar cell.

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