3D imaging system and method based on heterogeneous integrated photoelectric memristor array

Abstract

The invention belongs to the technical field of 3D imaging, and discloses a 3D imaging system and method based on a heterogeneous integrated photoelectric memristor array, and the system comprises a laser transmitting module which is used for transmitting laser to a target object; the photoelectric detection unit is used for receiving and processing an optical signal reflected by a target object, and the photoelectric detection unit comprises a photoelectric memristor M1, a reference resistor R, a comparator comp, a time-amplitude converter TAC and a storage module; the photoelectric memristor M1 is used for responding to a received optical signal and generating current; the reference resistor R and the photoelectric memristor M1 are connected in parallel to form a detection branch; the integrated design from optical signal detection to data storage and processing is achieved, the integration level and compactness of the system are improved, meanwhile, continuous power supply driving is not needed, and the problems that in the prior art, due to the fact that an imaging system needs continuous high-voltage power supply, the power consumption of the system is too high, and the integration level is limited are effectively solved.

Description

Technical Field

[0001] The present invention belongs to the technical field of 3D imaging, and in particular relates to a 3D imaging system and method based on a heterogeneous integrated photoelectric memristor array. Background Art

[0002] Current three-dimensional imaging systems primarily utilize lidar technology, which measures the distance to a target by measuring the round-trip time of laser pulses. Traditional solutions are typically based on single-photon avalanche diode (SPAD) arrays and time-to-digital converters (TDCs). The SPAD, as the core photodetector, requires a continuous high-voltage bias (typically 50-100V) to maintain normal operation. This constant high-voltage power requirement leads to significant power consumption issues in the system: on the one hand, the high-voltage drive circuit itself consumes a large amount of energy; on the other hand, the constant voltage bias required to maintain avalanche gain causes the SPAD array to generate significant leakage current even during static operation. This high power consumption severely restricts the system's application in portable devices and edge computing nodes, especially in battery-powered scenarios where long-term battery life is difficult to meet. Furthermore, continuous high-voltage operation brings with it derivative issues such as increased circuit design complexity and difficult thermal management, further limiting the improvement of system integration. Therefore, existing technologies face the problem of excessive power consumption and limited integration due to the need for continuous high-voltage power supply in imaging systems. Summary of the Invention

[0003] In response to the shortcomings of the existing technology, the purpose of the present invention is to provide a 3D imaging system and method based on a heterogeneous integrated photoelectric memristor array, which solves the problem in the existing technology that the imaging system requires continuous high-voltage power supply, resulting in excessive system power consumption and limited integration.

[0004] The purpose of the present invention can be achieved through the following technical solutions:

[0005] A 3D imaging system based on a heterogeneous integrated photoelectric memristor array, comprising:

[0006] A laser emission module, used for emitting laser light toward a target object;

[0007] A photoelectric detection unit is used to receive and process the light signal reflected by the target object. The photoelectric detection unit includes a photomemristor M1, a reference resistor R, a comparator comp, a time-amplitude converter TAC, and a storage module.

[0008] The photo-memristor M1 is used to respond to the received light signal and generate current;

[0009] The reference resistor R is connected in parallel with the photo-memristor M1 to form a detection branch;

[0010] The comparator comp input terminal is electrically connected to the output node of the detection branch, and is used to monitor the change of the voltage V_node at the output node of the detection branch. When V_node exceeds the threshold voltage set by the comparator comp, the comparator comp outputs a trigger signal;

[0011] The time-amplitude converter TAC is electrically connected to the comparator comp, and is used to convert the time interval Δt between the laser emission module emitting the laser and the comparator comp outputting the trigger signal into an analog voltage value;

[0012] The storage module is electrically connected to the time-amplitude converter TAC and is used to store analog voltage values;

[0013] There are multiple photoelectric detection units, which together form a photoelectric memristor array. The photoelectric memristor array is attached to the laser emission module and is located in the same plane.

[0014] The 3D imaging system also includes a filter, which is located between the photoelectric memristor array and the target object. The light signal reflected by the target object passes through the filter and is then irradiated onto the photoelectric memristor array.

[0015] The plurality of photoelectric detection units are arranged in a matrix of m rows and n columns, where m and n are both positive integers;

[0016] The storage module includes a memristor M2;

[0017] The 3D imaging system further includes a first input signal terminal Va and a third input signal terminal Vc;

[0018] The photoelectric memristor M1 also includes a reset port Mem1_rst;

[0019] The memristor M2 also includes a reset port Mem2_rst;

[0020] The reset ports Mem1_rst of the photoelectric memristors M1 are commonly connected to the first input signal terminal Va via a first wire;

[0021] The reset ports Mem2_rst of the memristors M2 are commonly connected to the third input signal terminal Vc via a third wire;

[0022] The 3D imaging system further includes a second input signal terminal Vb;

[0023] The comparator comp further includes a threshold voltage configuration port Vth_comp;

[0024] The threshold voltage configuration port Vth_comp of each comparator comp is commonly connected to the second input signal terminal Vb through a second wire;

[0025] The 3D imaging system also includes a data reading module Read_Out;

[0026] The time-amplitude converter TAC further includes an output terminal Out;

[0027] The output terminals Out of each time-amplitude converter TAC are commonly connected to a data reading module Read_Out via a fourth wire;

[0028] A 3D imaging method based on a heterogeneous integrated photoelectric memristor array, using the 3D imaging system to perform 3D imaging, specifically comprising the following steps:

[0029] The laser emission module emits laser light towards the target and records the laser emission time;

[0030] The photo-memristor M1 in each photo-detection unit receives the reflected light signal and generates a photocurrent;

[0031] The comparator Comp monitors the change of the voltage V_node at the output node, outputs a trigger signal when V_node exceeds the threshold voltage of the comparator Comp, and records the time when the trigger signal is output;

[0032] The time interval Δt is obtained by taking the difference between the laser emission time and the output trigger signal time;

[0033] When the comparator Comp outputs a trigger signal, the time-amplitude converter TAC converts the time interval Δt into an analog voltage value and stores the data through the storage module;

[0034] Based on the speed of light and the time interval Δt, the distance information between the target object and the photoelectric memristor array can be calculated, and 3D imaging can be completed based on the distance information.

[0035] Beneficial effects of the present invention:

[0036] 1. Compared with existing 3D imaging technologies, this invention achieves a highly integrated design from optical signal detection to data storage and processing by heterogeneously integrating a photoelectric memristor array with time-amplitude converters, comparators, and other circuits. This greatly improves the system's integration and compactness, meeting the application requirements of portable and miniaturized devices.

[0037] At the same time, compared with traditional photodetectors that require continuous high-voltage power supply, the photomemristor of the present invention only generates current when receiving light signals, without the need to maintain a high-voltage bias state, effectively reducing the overall power consumption of the system. This feature makes it particularly suitable for use in battery-powered portable devices.

[0038] 2. The design of a photoelectric memristor array combined with a filter can effectively remove ambient light interference, ensuring stable and accurate acquisition of target reflected light signals even under complex lighting conditions, thereby significantly improving imaging accuracy and reliability.

[0039] 3. The unified reset control and threshold voltage configuration design not only simplifies system wiring, reduces the risk of electromagnetic interference, reduces imaging delays and data error accumulation, significantly improves the real-time performance and quality of imaging, but also facilitates centralized management and control, effectively ensures the stability of system operation, and enhances the system's flexibility and adaptability, allowing for rapid parameter adjustment for different application scenarios.

[0040] 4. The centralized acquisition and processing function of the data reading module further improves the efficiency and accuracy of data reading, providing strong support for the subsequent rapid construction of high-quality 3D imaging;

[0041] 5. Based on the time-amplitude converter (TAC), sub-nanosecond time measurement is achieved. Combined with the speed of light, the target distance value can be directly calculated, effectively improving the accuracy of 3D imaging. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0043] Figure 1 It is a schematic diagram of the overall structure of the 3D imaging system of the present invention;

[0044] Figure 2 is a circuit diagram of a photoelectric detection unit of the present invention;

[0045] Figure 3 Schematic diagram of the packaging circuit of the photoelectric detection unit of the present invention;

[0046] Figure 4 1 is a schematic diagram of a photoelectric memristor array circuit of the present invention. DETAILED DESCRIPTION

[0047] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts shall fall within the scope of protection of the present invention.

[0048] like Figures 1 to 4As shown, a 3D imaging system based on a heterogeneous integrated photoelectric memristor array includes:

[0049] A laser emission module, used for emitting laser light toward a target object;

[0050] A photoelectric detection unit is used to receive and process the light signal reflected by the target object. The photoelectric detection unit includes a photomemristor M1, a reference resistor R, a comparator comp, a time-amplitude converter TAC, and a storage module.

[0051] The photo-memristor M1 is used to respond to the received light signal and generate current;

[0052] The reference resistor R is connected in parallel with the photo-memristor M1 to form a detection branch;

[0053] The comparator comp input terminal is electrically connected to the output node of the detection branch, and is used to monitor the change of the voltage V_node at the output node of the detection branch. When V_node exceeds the threshold voltage set by the comparator comp, the comparator comp outputs a trigger signal;

[0054] The time-amplitude converter TAC is electrically connected to the comparator comp, and is used to convert the time interval Δt between the laser emission module emitting the laser and the comparator comp outputting the trigger signal into an analog voltage value;

[0055] The storage module is electrically connected to the time-amplitude converter TAC and is used to store analog voltage values;

[0056] There are multiple photoelectric detection units, and the multiple photoelectric detection units together form a photoelectric memristor array. The photoelectric memristor array is attached to the laser emission module and is located in the same plane.

[0057] It should be noted that the photoelectric memristor array and the laser emission module can be attached to each other to reduce the distance measurement error;

[0058] The laser emission module emits a modulated laser light signal toward the target object, while the time-amplitude converter (TAC) records the laser emission moment of the laser emission module. After the laser is reflected by the surface of the target object, it passes through a filter to remove ambient light interference, and is finally received by the photoelectric memristor array. When the reflected light signal illuminates the photoelectric memristor M1, the photoelectric memristor M1 generates a current, causing the voltage V_node at the output node to rise. When the voltage V_node exceeds the threshold voltage set by the comparator comp, the comparator comp issues a trigger signal. By measuring and recording the time interval Δt between the laser emission module and the comparator comp outputting the trigger signal (i.e., the round trip of the light signal), combined with the speed of light calculation, distance measurement with sub-nanosecond time resolution can be achieved, thereby obtaining the distance information between the target object and the photoelectric memristor array, and ultimately reconstructing the three-dimensional morphology.

[0059] Preferably, the laser emission module can be selected from high-energy pulse fiber lasers, MEMS micromirror integrated lasers, etc.

[0060] The 3D imaging system also includes a filter, which is located between the photoelectric memristor array and the target object. The light signal reflected by the target object passes through the filter and is irradiated onto the photoelectric memristor array. Through the setting of the filter, the light signal reflected by the target object can effectively remove the interference of ambient light after passing through the filter.

[0061] The plurality of photoelectric detection units are arranged in a matrix form of m rows and n columns, where m and n are both positive integers.

[0062] The storage module includes a memristor M2; the time-amplitude converter TAC converts the time interval Δt into an analog voltage value, and the time interval Δt can be calculated and converted into distance information, so that the obtained distance information can be stored in the memristor M2 in the form of an analog voltage value, realizing integrated processing from optical signal detection to data storage.

[0063] The 3D imaging system further includes a first input signal terminal Va and a third input signal terminal Vc;

[0064] The photoelectric memristor M1 also includes a reset port Mem1_rst;

[0065] The memristor M2 also includes a reset port Mem2_rst;

[0066] The reset ports Mem1_rst of the photoelectric memristors M1 are commonly connected to the first input signal terminal Va via a first wire;

[0067] The reset ports Mem2_rst of the memristors M2 are commonly connected to the third input signal terminal Vc via a third wire;

[0068] It should be noted that, in normal use, the first input signal terminal Va is grounded;

[0069] When necessary, all photoelectric memristors M1 can be synchronously reset through the first input signal terminal Va, and all memristors M2 can be synchronously reset through the third input signal terminal Vc, ensuring stable operation of the system, improving imaging accuracy, reducing wiring complexity and electromagnetic interference, and facilitating centralized control and maintenance.

[0070] The 3D imaging system further includes a second input signal terminal Vb;

[0071] The comparator comp further includes a threshold voltage configuration port Vth_comp;

[0072] The threshold voltage configuration port Vth_comp of each comparator comp is commonly connected to the second input signal terminal Vb via a second wire. The threshold voltages of all comparators comp can be uniformly controlled to ensure consistent system judgment standards, improve signal processing accuracy and stability, facilitate centralized management, and enhance system flexibility and adaptability. The threshold voltage can also be programmably adjusted to accommodate varying detection sensitivity requirements.

[0073] The 3D imaging system also includes a data reading module Read_Out;

[0074] The time-amplitude converter TAC further includes an output terminal Out;

[0075] The output terminals Out of each time-amplitude converter TAC are connected to the data reading module Read_Out through a fourth wire. This can integrate multiple signals to facilitate centralized data collection, processing, and analysis, improve data reading efficiency and accuracy, simplify system architecture, reduce complexity, and enhance system stability and reliability.

[0076] A 3D imaging method based on a heterogeneous integrated photoelectric memristor array, using the 3D imaging system to perform 3D imaging, specifically comprising the following steps:

[0077] The laser emission module emits laser light towards the target and records the laser emission time;

[0078] The photo-memristor M1 in each photo-detection unit receives the reflected light signal and generates a photocurrent;

[0079] The comparator Comp monitors the change of the voltage V_node at the output node, outputs a trigger signal when V_node exceeds the threshold voltage of the comparator Comp, and records the time when the trigger signal is output;

[0080] The time interval Δt is obtained by taking the difference between the laser emission time and the output trigger signal time;

[0081] When the comparator Comp outputs a trigger signal, the time-amplitude converter TAC converts the time interval Δt into an analog voltage value and stores the data through the storage module;

[0082] Based on the speed of light and the time interval Δt, the distance between the target object and the photoelectric memristor array can be calculated, and 3D imaging can be completed based on the distance information;

[0083] The calculation formula for the distance information between the target object and the photoelectric memristor array is as follows:

[0084] S=S1+S2=c×Δt

[0085]

[0086] Where S represents the total displacement of the laser from emission to reflection to the photoelectric memristor array; c represents the speed of light; S1 represents the distance between the target object and the photoelectric memristor array; S2 represents the distance between the target object and the laser emission module;

[0087] The smaller the position deviation between the laser emission module and the photoelectric memristor array, the closer S1 and S2 are, and the higher the imaging accuracy. At the same time, when the size of S1 or S2 reaches a certain level, the deviation rate between S1 and S2 also becomes smaller.

[0088] The time-to-amplitude converter (TAC) converts the time interval Δt into an analog voltage value by charging a precision capacitor.

[0089] Compared with existing 3D imaging technology, the present invention realizes a highly integrated design from optical signal detection to data storage and processing by heterogeneously integrating the photoelectric memristor array with time-amplitude converters, comparators and other circuits, greatly improving the integration and compactness of the system and meeting the application requirements of portable and miniaturized devices. At the same time, compared with traditional photodetectors that require continuous high-voltage power supply, the photoelectric memristor of the present invention only generates current when receiving light signals and does not need to maintain a high-voltage bias state, effectively reducing the overall power consumption of the system. This feature makes it particularly suitable for application in battery-powered portable devices. The design of the photoelectric memristor array combined with the filter can effectively remove ambient light interference, ensuring that the reflected light of the target object can be stably and accurately obtained under complex lighting conditions. signal, thereby significantly improving imaging accuracy and reliability; the design of unified reset control and threshold voltage configuration not only simplifies system wiring, reduces the risk of electromagnetic interference, reduces imaging delay and data error accumulation, significantly improves the real-time performance and quality of imaging, but also facilitates centralized management and regulation, effectively ensures the stability of system operation, and enhances the flexibility and adaptability of the system, and can quickly adjust parameters for different application scenarios; the centralized acquisition and processing function of the data reading module further improves the data reading efficiency and accuracy, and provides strong support for the subsequent rapid construction of high-quality 3D imaging; based on the time-amplitude converter TAC, sub-nanosecond time measurement is achieved, and combined with the speed of light, the target distance value can be directly calculated, effectively improving the accuracy of 3D imaging.

[0090] Throughout this specification, references to terms such as "one embodiment," "example," or "specific example" indicate that the specific features, structures, materials, or characteristics described in conjunction with that embodiment or example are included in at least one embodiment or example of the present invention. In this specification, schematic representations of these terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0091] The basic principles, main features, and advantages of the present invention are shown and described above. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions are merely illustrative of the principles of the present invention. Various changes and modifications may be made to the present invention without departing from the spirit and scope of the present invention, and such changes and modifications are intended to fall within the scope of the present invention.

Claims

1. A 3D imaging system based on a heterogeneous integrated photoelectric memristor array, characterized in that: include: A laser emission module, used for emitting laser light toward a target object; A photoelectric detection unit is used to receive and process the light signal reflected by the target object. The photoelectric detection unit includes a photomemristor M1, a reference resistor R, a comparator comp, a time-amplitude converter TAC, and a storage module. The photo-memristor M1 is used to respond to the received light signal and generate current; The reference resistor R is connected in parallel with the photo-memristor M1 to form a detection branch; The comparator comp input terminal is electrically connected to the output node of the detection branch, and is used to monitor the change of the voltage V_node at the output node of the detection branch. When V_node exceeds the threshold voltage set by the comparator comp, the comparator comp outputs a trigger signal; The time-amplitude converter TAC is electrically connected to the comparator comp, and is used to convert the time interval Δt between the laser emission module emitting the laser and the comparator comp outputting the trigger signal into an analog voltage value; The storage module is electrically connected to the time-amplitude converter TAC and is used to store analog voltage values; There are multiple photoelectric detection units, which together form a photoelectric memristor array. The photoelectric memristor array is attached to the laser emission module and is located in the same plane.

2. The 3D imaging system according to claim 1, wherein: The 3D imaging system also includes a filter, which is located between the photoelectric memristor array and the target object. The light signal reflected by the target object passes through the filter and is irradiated onto the photoelectric memristor array.

3. The 3D imaging system according to claim 1, wherein: The plurality of photoelectric detection units are arranged in a matrix form of m rows and n columns, where m and n are both positive integers.

4. The 3D imaging system according to claim 3, wherein: The storage module includes a memristor M2.

5. The 3D imaging system according to claim 4, wherein: The 3D imaging system further includes a first input signal terminal Va and a third input signal terminal Vc; The photoelectric memristor M1 also includes a reset port Mem1_rst; The memristor M2 also includes a reset port Mem2_rst; The reset ports Mem1_rst of the photoelectric memristors M1 are commonly connected to the first input signal terminal Va via a first wire; The reset ports Mem2_rst of the memristors M2 are commonly connected to the third input signal terminal Vc via a third wire.

6. The 3D imaging system according to claim 5, wherein: The 3D imaging system further includes a second input signal terminal Vb; The comparator comp further includes a threshold voltage configuration port Vth_comp; The threshold voltage configuration port Vth_comp of each comparator comp is commonly connected to the second input signal terminal Vb through a second wire.

7. The 3D imaging system according to claim 6, wherein: The 3D imaging system also includes a data reading module Read_Out; The time-amplitude converter TAC further includes an output terminal Out; The output terminals Out of the time-to-amplitude converters TAC are commonly connected to the data reading module Read_Out via a fourth wire.

8. A 3D imaging method based on a heterogeneous integrated photoelectric memristor array, using the 3D imaging system according to any one of claims 1 to 7 for 3D imaging, characterized in that: The specific steps include: The laser emission module emits laser light towards the target and records the laser emission time; The photo-memristor M1 in each photo-detection unit receives the reflected light signal and generates a photocurrent; The comparator Comp monitors the change of the voltage V_node at the output node, outputs a trigger signal when V_node exceeds the threshold voltage of the comparator Comp, and records the time when the trigger signal is output; The time interval Δt is obtained by taking the difference between the laser emission time and the output trigger signal time; When the comparator Comp outputs a trigger signal, the time-amplitude converter TAC converts the time interval Δt into an analog voltage value and stores the data through the storage module; Based on the speed of light and the time interval Δt, the distance information between the target object and the photoelectric memristor array can be calculated, and 3D imaging can be completed based on the distance information.

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