One-bit phase shift reflection unit based on rotary structure
Through the rotary structure of 1-bit phase shift reflection unit, combined with 3D printing technology, the problem of insufficient dynamic tuning capability of mechanical reconfigurable antennas is solved, and dynamic beam control with low cost, high stability and wide bandwidth is achieved, which is suitable for C-band communication systems.
Patent Information
- Application Number
- CN202510765305.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-06-10
- Publication Date
- 2025-08-26
AI Technical Summary
The existing mechanical reconfigurable antennas have complex driving systems, low integration, limited dynamic tuning capabilities, and 3D printed reflective arrays lack dynamic phase tuning capabilities, which cannot meet the real-time beam scanning requirements.
Using a 1-bit phase shift reflection unit based on a rotary structure, the medium distribution is changed through mechanical rotation, and 180° phase jump is achieved. Combined with 3D printing technology, the cost is reduced and the structure is optimized to expand the working bandwidth and eliminate polarization dependence.
It realizes low cost, high stability, broad bandwidth and dynamic control capabilities, avoids electronic losses, and is suitable for C-band communication systems.
Smart Images
Figure CN120545685A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of phased array antennas, and in particular to a 1-bit phase-shift reflection unit based on a rotary structure. Background Art
[0002] With the rapid development of wireless communication technology, modern communication systems are placing increasingly stringent demands on antenna performance, particularly in terms of multi-band support, dynamic beam steering, low cost, and high stability. Traditional single-band, single-function antennas are no longer able to meet the demands of complex communication scenarios. For example, satellite communications, 5G base stations, and radar systems require simultaneous transmission, reflection, and scattering capabilities, while also supporting real-time beam pointing adjustments. To improve spectrum efficiency and system flexibility, reconfigurable reflectarray (RA) antennas have become a research focus. Their core goal is to achieve dynamic beamforming by manipulating the phase distribution of individual elements.
[0003] Currently, reconfigurable antennas are primarily categorized into two types: electronic and mechanical. Electronic reconfigurable antennas (such as those based on varactor diodes, PIN diodes, or MEMS switches) use electrically controlled components to adjust phase, offering advantages such as fast response and high integration. However, these solutions suffer from significant drawbacks: high insertion loss, complex circuits, and quantization errors. Mechanical reconfigurable antennas achieve phase control through physical structural changes (such as rotation and displacement), avoiding the loss of electronic components and offering high stability and a long lifespan. However, existing mechanical solutions still face significant challenges: complex drive systems, low integration, and limited dynamic tuning capabilities.
[0004] In recent years, breakthroughs in 3D printing technology have provided new ideas for antenna manufacturing. Its low cost and high precision are particularly suitable for the mass production of complex structures. Existing 3D printed reflective arrays are mostly static designs, lack dynamic phase tuning capabilities, and cannot meet the needs of real-time beam scanning. Although a few studies have attempted to combine mechanical rotation with 3D printing technology, the following problems still exist: polarization dependence, narrow bandwidth, and insufficient tuning accuracy. In summary, the existing technology has failed to effectively balance the requirements of low cost, high stability, wide bandwidth and dynamic control capabilities. Therefore, the present invention provides an innovative mechanical phase tuning solution that can not only reduce costs by using 3D printing technology, but also achieve discrete phase jumps through structural optimization, while eliminating polarization dependence and expanding the working bandwidth. Summary of the Invention
[0005] The present invention provides a 1-bit phase-shift reflection unit based on a rotary structure, which changes the medium distribution by mechanical rotation to achieve a 180° phase jump. It has the advantages of simple structure, low cost, and low loss, and is suitable for C-band (4.3GHz) communication systems.
[0006] In order to achieve the above-mentioned purpose, the present invention provides the following technical solutions: a 1-bit phase shift reflection unit based on a rotary structure, the reflection unit comprising: a metal cylinder (3), a first cylindrical wall (1), a second cylindrical wall (2), and a metal floor (4); the metal cylinder (3) is placed on the inner wall of the first cylindrical wall (1), but does not rotate with the rotation of the first cylindrical wall (1), and can effectively conduct current, reduce energy loss, and thus improve the radiation efficiency of the antenna; the first cylindrical wall (1) changes the effective relative dielectric constant of different media inside the first cylindrical wall by rotating to change the dielectric properties around the metal cylinder (3), thereby achieving phase tuning; the second cylindrical wall (2) is coaxial with the first cylindrical wall (1), and changes the effective relative dielectric constant of different media inside the second cylindrical wall by rotating to change the dielectric properties around the metal cylinder (3), thereby achieving phase tuning; the metal floor (4) is a square metal sheet placed along the xoy plane.
[0007] Furthermore, the first cylindrical wall (1) comprises a first arc-shaped dielectric layer (11), a second arc-shaped dielectric layer (12), a third arc-shaped dielectric layer (13) and a fourth arc-shaped dielectric layer (14); the first arc-shaped dielectric layer (11) has a relative dielectric constant of 1.65 and a certain thickness; the second arc-shaped dielectric layer (12) has a relative dielectric constant of 2.4 and a certain thickness, and is symmetrical with the first arc-shaped dielectric layer (11) about the axis; the third arc-shaped dielectric layer (13) is an air dielectric layer, located between the first arc-shaped dielectric layer (11) and the second arc-shaped dielectric layer (12); and the fourth arc-shaped dielectric layer (14) is symmetrical with the third arc-shaped dielectric layer (13) about the axis, and is an air dielectric layer.
[0008] Furthermore, the second cylindrical wall (2) comprises a fifth arc-shaped dielectric layer (21), a sixth arc-shaped dielectric layer (22), a seventh arc-shaped dielectric layer (23) and an eighth arc-shaped dielectric layer (24); the fifth arc-shaped dielectric layer (21) has a relative dielectric constant of 1.65 and a certain thickness; the sixth arc-shaped dielectric layer (22) has a relative dielectric constant of 2.4 and a certain thickness, and is symmetrical with the fifth arc-shaped dielectric layer (21) about the axis; the seventh arc-shaped dielectric layer (23) is an air dielectric layer, located between the fifth arc-shaped dielectric layer (21) and the sixth arc-shaped dielectric layer (22); the eighth arc-shaped dielectric layer (24) is symmetrical with the seventh arc-shaped dielectric layer (23) about the axis, and is an air dielectric layer.
[0009] Furthermore, the arc angle θ of the first arc-shaped dielectric layer (11), the second arc-shaped dielectric layer (12), the fifth arc-shaped dielectric layer (21), and the sixth arc-shaped dielectric layer (22) is 90°, and the widths of the symmetrically distributed third arc-shaped dielectric layer (13), the fourth arc-shaped dielectric layer (14), the seventh arc-shaped dielectric layer (23), and the eighth arc-shaped dielectric layer (24) account for 25% of the total circumference, so as to balance mechanical strength and phase tuning sensitivity.
[0010] Furthermore, the dielectric constant gradient of the 1-bit phase-shift reflection unit based on the rotary structure along the x / y axis is consistent, eliminating polarization dependence.
[0011] Furthermore, the one-bit phase shift reflection unit based on the rotary structure realizes phase change by rotating the first cylindrical wall (1) and the second cylindrical wall (2); when the first cylindrical wall (1) and the second cylindrical wall (2) are respectively in a specific rotation state, the required resonance condition can be formed, thereby realizing a phase jump from 160° to -20° in the 4.3 GHz frequency band.
[0012] Furthermore, the mapping relationship between the rotation angles φ1 and φ2 of the 1-bit phase shift reflection unit based on the rotary structure and the phase state is a discrete design, specifically including: φ1=75°, φ2=[0°, 180°] corresponding to phase state 1 (160°); φ1=45°, φ2=[0°, 180°] corresponding to phase state 2 (-20°); and the allowable rotation angle error range is ±8°, while still maintaining 1-bit phase accuracy.
[0013] Furthermore, the thickness and diameter of the first cylindrical wall (1) and the second cylindrical wall (2) are optimized and designed to have polarization insensitivity characteristics, and can maintain stable phase change performance within a wide frequency band.
[0014] Furthermore, the first cylindrical wall (1) and the second cylindrical wall (2) both have the central axis as the symmetry axis, forming a strict rotationally symmetrical structure; regardless of whether the incident wave is a transverse electric mode or a transverse magnetic mode, the symmetrical structure has isotropy on the distribution of the electromagnetic field, avoiding polarization-related resonance.
[0015] Furthermore, the combination of the metal cylinder (3) of the 1-bit phase shift reflection unit based on the rotary structure and different dielectric layers excites multi-order resonance modes, which are superimposed in the frequency domain to expand the bandwidth, thereby ensuring stable phase change performance within a wide frequency band.
[0016] Compared with the prior art, the present invention has the following advantages:
[0017] 1. The present invention's 1-bit phase-shift reflection unit, based on a rotary structure, uses a purely mechanical phase tuning solution without electronic components such as diodes or varactors. This avoids the insertion loss and circuit complexity issues of traditional electronic reconfigurable antennas, resulting in high long-term stability and low reflection coefficient amplitude loss.
[0018] 2. The present invention's 1-bit phase-shifting reflector unit, based on a rotating structure, utilizes 3D printing technology to create a cylindrical shell with a non-uniform dielectric constant. Combined with a mechanical rotating structure, this significantly reduces the manufacturing cost of complex phase-tuning units. Furthermore, the coaxial design of the dual cylindrical walls simplifies the assembly process, significantly improving system integration and scalability, making it suitable for large-scale array deployment.
[0019] 3. The 1-bit phase-shift reflection unit based on the rotary structure of the present invention adopts the superposition of multiple resonant modes and symmetrical structural design, and exhibits consistent performance for both transverse electric (TE) and transverse magnetic (TM) polarization modes, effectively eliminating polarization dependence. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for describing the embodiments or the prior art, wherein:
[0021] 1-first cylindrical wall, 11-first curved dielectric layer, 12-second curved dielectric layer, 13-third curved dielectric layer, 14-fourth curved dielectric layer, 2-second cylindrical wall, 21-fifth curved dielectric layer, 22-sixth curved dielectric layer, 23-seventh curved dielectric layer, 24-eighth curved dielectric layer, 3-metal cylinder, 4-metal floor.
[0022] Figure 1 It is a structural diagram of a 1-bit phase shift reflection unit based on a rotary structure described in an embodiment.
[0023] Figure 2 This is a front view of a 1-bit phase-shift reflection unit based on a rotary structure described in an embodiment, without showing the air dielectric layer.
[0024] Figure 3 3 is a top view of a 1-bit phase-shift reflection unit based on a rotary structure described in an embodiment.
[0025] Figure 4 This is a model diagram of a 1-bit phase-shift reflection unit based on a rotary structure in two different phase states described in an embodiment.
[0026] Figure 5 This is a reflection phase diagram of a 1-bit phase shift reflection unit based on a rotary structure in two different phase states described in the embodiment. DETAILED DESCRIPTION
[0027] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.
[0028] The present invention provides the following specific implementation methods:
[0029] Please refer to Figure 1-Figure 3This example provides a 1-bit phase shift reflection unit based on a rotary structure, which includes: a metal cylinder (3), a first cylindrical wall (1), a second cylindrical wall (2), and a metal floor (4); the metal cylinder (3) is placed on the inner wall of the first cylindrical wall (1), but does not rotate with the rotation of the first cylindrical wall (1), and can effectively conduct current, reduce energy loss, and thus improve the radiation efficiency of the antenna; the first cylindrical wall (1) changes the effective relative dielectric constant of different media inside it by rotating to change the dielectric properties around the metal cylinder (3), thereby achieving phase tuning; the second cylindrical wall (2) is coaxial with the first cylindrical wall (1), and changes the effective relative dielectric constant of different media inside it by rotating to change the dielectric properties around the metal cylinder (3), thereby achieving phase tuning; the metal floor (4) is a square metal sheet placed along the xoy plane; the first cylindrical wall (1) includes a first arc-shaped dielectric layer (11) , a second arc-shaped dielectric layer (12), a third arc-shaped dielectric layer (13) and a fourth arc-shaped dielectric layer (14); the first arc-shaped dielectric layer (11) has a relative dielectric constant of 1.65 and a certain thickness; the second arc-shaped dielectric layer (12) has a relative dielectric constant of 2.4 and a certain thickness, and is symmetrical with the first arc-shaped dielectric layer (11) about the axis; the third arc-shaped dielectric layer (13) is an air dielectric layer, located between the first arc-shaped dielectric layer (11) and the second arc-shaped dielectric layer (14). The fourth arc-shaped dielectric layer (14) and the third arc-shaped dielectric layer (13) are symmetrical about the axis and are air dielectric layers; the second cylindrical wall (2) includes a fifth arc-shaped dielectric layer (21), a sixth arc-shaped dielectric layer (22), a seventh arc-shaped dielectric layer (23) and an eighth arc-shaped dielectric layer (24); the fifth arc-shaped dielectric layer (21) has a relative dielectric constant of 1.65 and has a certain thickness; the sixth arc-shaped dielectric layer (22) has a relative dielectric constant of 2.4, having a certain thickness and being symmetrical with the fifth arc-shaped dielectric layer (21) about the axis; the seventh arc-shaped dielectric layer (23) is an air dielectric layer, located between the fifth arc-shaped dielectric layer (21) and the sixth arc-shaped dielectric layer (22); the eighth arc-shaped dielectric layer (24) is symmetrical with the seventh arc-shaped dielectric layer (23) about the axis and is an air dielectric layer; the arc angle θ of the first arc-shaped dielectric layer (11), the second arc-shaped dielectric layer (12), the fifth arc-shaped dielectric layer (21), and the sixth arc-shaped dielectric layer (22) is 90°, and the symmetrically distributed third arc-shaped dielectric layer (13) and the fourth arc-shaped dielectric layer (24) are symmetrically distributed. (14) and the width of the seventh arc-shaped dielectric layer (23) and the eighth arc-shaped dielectric layer (24) account for 25% of the total circumference to balance the mechanical strength and phase tuning sensitivity; the dielectric constant gradient of the 1-bit phase shift reflection unit based on the rotary structure is consistent along the x / y axis to eliminate polarization dependence; the 1-bit phase shift reflection unit based on the rotary structure realizes phase change by rotating the first cylindrical wall (1) and the second cylindrical wall (2); when the first cylindrical wall (1) and the second cylindrical wall (2) are in a specific rotation state, the required resonance condition can be formed, thereby in the 4.3GHz frequency band A phase jump from 160° to -20° is achieved; the mapping relationship between the rotation angles φ1 and φ2 of the 1-bit phase shift reflection unit based on the rotary structure and the phase state is a discrete design, specifically including: φ1=75°, φ2=[0°, 180°] corresponding to phase state 1 (160°); φ1=45°, φ2=[0°, 180°] corresponding to phase state 2 (-20°); the 1-bit phase shift reflection unit based on the rotary structure allows a rotation angle error range of ±8° and can still maintain 1-bit phase accuracy; the thickness of the first cylindrical wall (1) and the second cylindrical wall (2) The diameter is optimized and has polarization insensitivity, and can maintain stable phase change performance within a wide frequency band; the first cylindrical wall (1) and the second cylindrical wall (2) are both symmetrical with the central axis, forming a strict rotationally symmetrical structure; regardless of whether the incident wave is a transverse electric mode or a transverse magnetic mode, the symmetrical structure has isotropy on the distribution of the electromagnetic field, avoiding polarization-related resonance; the combination of the metal cylinder (3) of the 1-bit phase shift reflection unit based on the rotary structure and different dielectric layers excites multi-order resonance modes, which are superimposed in the frequency domain to expand the bandwidth, thereby ensuring stable phase change performance within a wide frequency band.
[0030] In the present invention, the radius R1 and thickness t1 of the first arc-shaped dielectric layer (11) and the second arc-shaped dielectric layer (12) are 16 mm and 3.2 mm respectively; the radius R2 and thickness t2 of the fifth arc-shaped dielectric layer (21) and the sixth arc-shaped dielectric layer (22) are 8 mm and 2 mm respectively; the height d of the metal cylinder (3), the first cylindrical wall (1), and the second cylindrical wall (2) are r The length L of the metal floor (4) is 27 mm. xand width L y Both are 33mm.
[0031] like Figure 4 The model diagrams of the reflector unit in two different phase states are given. The model diagram on the left is φ1=75°, φ2=0° corresponding to phase state 1 (160°), and the model diagram on the right is φ1=45°, φ2=0° corresponding to phase state 2 (-20°).
[0032] like Figure 5 The phase response diagram of the reflector unit in the 4.3GHz frequency band is given. It can be seen that when the reflector unit rotates φ2 from 0° to 180° when φ1=75°, it can maintain a 160° reflection phase (error range ±4°); when the reflector unit rotates φ2 from 0° to 180° when φ1=45°, it can maintain a -20° reflection phase (error range ±8°). It has the characteristics of polarization insensitivity and can maintain stable phase change performance within a wide bandwidth.
[0033] It can be seen from the above that the present invention has the characteristics of low cost, high integration, high stability, polarization insensitivity and dynamic beam control.
[0034] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any modifications or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.
Claims
1. A 1-bit phase shift reflection unit based on a rotary structure, characterized in that: The reflective unit is a multi-layer composite structure, comprising: The metal cylinder (3) is placed on the inner wall of the first cylindrical wall (1) but does not rotate with the rotation of the first cylindrical wall (1), and can effectively conduct current, reduce energy loss, and thus improve the radiation efficiency of the antenna; The first cylindrical wall (1) changes the effective relative dielectric constants of different media inside the first cylindrical wall (1) by rotating to change the dielectric properties around the metal cylinder (3), thereby achieving phase tuning; The second cylindrical wall (2) is coaxial with the first cylindrical wall (1), and changes the effective relative dielectric constants of different media inside the second cylindrical wall (2) by rotating to change the dielectric properties around the metal cylinder (3), thereby achieving phase tuning; The metal floor (4) is a square metal sheet placed along the xoy surface; The 1-bit phase shift reflection unit based on the rotating structure can achieve a 1-bit phase change within a specific frequency band of 4.3GHz, that is, the phase jumps from 160° to -20°.
2. According to claim 1, the first cylindrical wall (1) comprises a first arc-shaped dielectric layer (11), a second arc-shaped dielectric layer (12), a third arc-shaped dielectric layer (13) and a fourth arc-shaped dielectric layer (14); the first arc-shaped dielectric layer (11) has a relative dielectric constant of 1.65 and has a certain thickness; the second arc-shaped dielectric layer (12) has a relative dielectric constant of 2.4 and has a certain thickness, and is symmetrical with the first arc-shaped dielectric layer (11) about the axis; the third arc-shaped dielectric layer (13) is an air dielectric layer, located between the first arc-shaped dielectric layer (11) and the second arc-shaped dielectric layer (12); the fourth arc-shaped dielectric layer (14) is symmetrical with the third arc-shaped dielectric layer (13) about the axis, and is an air dielectric layer.
3. According to claim 1, the second cylindrical wall (2) comprises a fifth arc-shaped dielectric layer (21), a sixth arc-shaped dielectric layer (22), a seventh arc-shaped dielectric layer (23) and an eighth arc-shaped dielectric layer (24); the fifth arc-shaped dielectric layer (21) has a relative dielectric constant of 1.65 and a certain thickness; the sixth arc-shaped dielectric layer (22) has a relative dielectric constant of 2.4 and a certain thickness, and is symmetrical with the fifth arc-shaped dielectric layer (21) about the axis; the seventh arc-shaped dielectric layer (23) is an air dielectric layer, located between the fifth arc-shaped dielectric layer (21) and the sixth arc-shaped dielectric layer (22); the eighth arc-shaped dielectric layer (24) is symmetrical with the seventh arc-shaped dielectric layer (23) about the axis, and is an air dielectric layer.
4. According to claim 2 and claim 3, the one-bit phase shift reflection unit based on the rotary structure is characterized in that: The arc angle θ of the first arc-shaped dielectric layer (11), the second arc-shaped dielectric layer (12), the fifth arc-shaped dielectric layer (21), and the sixth arc-shaped dielectric layer (22) is 90°, and the widths of the symmetrically distributed third arc-shaped dielectric layer (13), the fourth arc-shaped dielectric layer (14), the seventh arc-shaped dielectric layer (23), and the eighth arc-shaped dielectric layer (24) account for 25% of the total circumference, so as to balance mechanical strength and phase tuning sensitivity.
5. According to claim 4, the one-bit phase shift reflection unit based on the rotary structure is characterized in that: The dielectric constant gradient of the reflection unit along the x / y axis is consistent, eliminating polarization dependence.
6. According to claim 2 and claim 3, the one-bit phase shift reflection unit based on the rotary structure is characterized in that: The reflection unit realizes phase change by rotating the first cylindrical wall (1) and the second cylindrical wall (2); when the first cylindrical wall (1) and the second cylindrical wall (2) are respectively in a specific rotation state, a required resonance condition can be formed, thereby realizing a phase jump from 160° to -20° in the 4.3 GHz frequency band.
7. According to claim 6, the one-bit phase shift reflection unit based on the rotary structure is characterized in that: The mapping relationship between the rotation angles φ1 and φ2 and the phase state is a discrete design, specifically including: φ1=75°, φ2=[0°,180°] corresponding to phase state 1 (160°); φ1=45°, φ2=[0°,180°] corresponding to phase state 2 (-20°); and the allowed rotation angle error range is ±8°, and 1-bit phase accuracy can still be maintained.
8. According to claim 1, the one-bit phase shift reflection unit based on a rotary structure is characterized in that: The thickness and diameter of the first cylindrical wall (1) and the second cylindrical wall (2) are optimized and designed, and have polarization insensitivity characteristics, and can maintain stable phase change performance within a wide frequency band.
9. According to claim 7, the one-bit phase shift reflection unit based on a rotary structure is characterized in that: The first cylindrical wall (1) and the second cylindrical wall (2) of the reflection unit both take the central axis as the symmetry axis, forming a strict rotationally symmetrical structure; regardless of whether the incident wave is a transverse electric mode or a transverse magnetic mode, the symmetrical structure has isotropy on the distribution of the electromagnetic field, avoiding polarization-related resonance.
10. According to claim 1, the one-bit phase shift reflection unit based on a rotary structure is characterized in that: The combination of the metal cylinder (3) of the reflection unit and different dielectric layers excites multi-order resonance modes, which are superimposed in the frequency domain to expand the bandwidth, thereby ensuring stable phase change performance within a wide frequency band.