Antenna and detection system based on metasurface phase-controlled selective reflection, transmission mode

Abstract

The application relates to an antenna and a detection system based on a super surface phase control selection reflection and transmission mode. The antenna comprises a PIN size gradient super surface, a PIN size gradient super surface layer of which is divided into four subunits, and the gradient metal patch size in the same subunit uniformly and linearly increases along a direction; a phase control unit is used to obtain a mode control signal and generate a beam pointing control signal based on collected received signal strength; and a PIN driving unit is used to control the PIN size gradient super surface to be in a reflection or transmission mode based on the mode control signal, and drive the PIN size gradient super surface to adjust a beam deflection angle according to the beam pointing control signal. The application can improve the flexibility of super surface antenna mode selection and the accuracy of phase control, and the detection system constructed based on the antenna has the characteristics of fast detection speed and strong anti-interference capability, and is especially suitable for scenes such as unmanned aerial vehicles and satellites which are sensitive to loads.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of antenna phase control and radar detection, in particular to an antenna based on metasurface phase control for selecting reflection and transmission modes and a detection system. BACKGROUND

[0002] Traditional antennas are widely used in communication, radar detection and other fields. Common types include dipole antennas, parabolic antennas, etc. The basic working principle is to generate electromagnetic waves through the change of current in the conductor to realize signal transmission and reception. However, in terms of reflection and transmission mode selection and phase control, traditional antennas have obvious shortcomings. In particular, in terms of reflection and transmission mode selection, traditional antennas lack flexible switching capability. Most traditional antennas are designed to work in a single mode, making it difficult to quickly switch between reflection and transmission modes according to actual needs, thus limiting their application in complex communication and detection scenarios and high pressure magnetic environments. In terms of phase control, traditional antennas have limited phase adjustment methods and low precision, usually relying on changing the physical structure or feeding method of the antenna to achieve phase change, which is complex to operate and difficult to achieve precise phase control, and cannot meet the stringent requirements of modern communication systems such as integrated communication and detection systems for fast and accurate phase control of multiple beams.

[0003] In summary, traditional antennas have difficulty in flexibly switching between reflection and transmission modes in complex electromagnetic environments, and have low phase control precision and complex operation. Although existing metasurface antennas have some improvements, there is still room for improvement in terms of flexibility of mode selection and accuracy of phase control. SUMMARY

[0004] The technical problem to be solved by the present application is to provide an antenna based on metasurface phase control for selecting reflection and transmission modes and a detection system, which can improve the flexibility of mode selection and the accuracy of phase control of metasurface antennas.

[0005] The technical solution adopted by the present application to solve the technical problem is to provide an antenna based on metasurface phase control for selecting reflection and transmission modes, comprising:

[0006] The PIN size gradient metasurface comprises a PIN size gradient metasurface layer, a first dielectric layer, a signal isolation layer, a second dielectric layer and a PIN array metasurface layer stacked in sequence, wherein the PIN size gradient metasurface layer comprises four PIN size gradient sub-units, each PIN size gradient sub-unit uniformly distributes a plurality of gradient metal patches, and the size of the gradient metal patches in the same PIN size gradient sub-unit increases uniformly along a direction.

[0007] The signal strength acquisition unit is used to acquire the received signal strength.

[0008] a phase control unit configured to obtain a mode control signal and generate a beam pointing control signal based on a received signal strength;

[0009] a PIN driving unit configured to control a switching state of the PIN diodes in the PIN size gradient metasurface layer and the PIN array metasurface layer based on the mode control signal, so that the PIN size gradient metasurface is placed in a reflection or transmission mode, and drive the PIN size gradient metasurface to adjust a beam deflection angle according to the beam pointing control signal.

[0010] Further, the phase control unit is further configured to collect a reflection wave phase signal or a transmission wave phase signal, generate a phase control signal based on a phase difference between the collected phase signal and an expected phase, and the PIN driving unit is configured to control a bias current of the PIN diodes in the PIN size gradient metasurface layer to a target size based on the phase control signal, so as to adjust the reflection wave or the transmission wave to the expected phase.

[0011] Further, the target size of the bias current of the PIN diodes in the PIN size gradient metasurface layer is represented as

[0012]

[0013] wherein, is the target size of the bias current of the PIN diodes in the PIN size gradient metasurface layer at time t, is a phase difference between the collected phase signal and the expected phase at time t.

[0014] Further, the phase control unit is further configured to collect an environmental parameter, and dynamically compensate the target size of the bias current of the PIN diodes in the PIN size gradient metasurface layer based on the collected environmental parameter.

[0015] Further, the target size of the bias current of the PIN diodes after compensation is represented as

[0016]

[0017] wherein, is the target size of the bias current after compensation, is a reference bias current, is a temperature compensation coefficient, is a temperature interference change amount, is a humidity compensation coefficient, is a humidity interference change amount, is an electromagnetic compensation coefficient, is an electromagnetic interference change amount.

[0018] Further, the PIN array metasurface layer is uniformly distributed with slit metal patches corresponding to the gradient metal patches, each slit metal patch is connected with a corresponding slit metal patch and is electrically connected with the PIN driving unit through a PIN diode.

[0019] Further, when the PIN size gradient metasurface is in a transmission mode state, the incident electromagnetic wave is transmitted from the PIN size gradient metasurface layer to the PIN array metasurface layer; when the PIN size gradient metasurface is in a reflection mode state, the incident electromagnetic wave is reflected by the PIN size gradient metasurface layer.

[0020] Further, the slit metal patch includes a rectangular metal patch connected with the corresponding gradient metal patch, one side of the rectangular metal patch is electrically connected with a first symmetrical metal patch through a symmetrical PIN diode, and the other side is electrically connected with a second symmetrical metal patch through a second symmetrical PIN diode; the first symmetrical metal patch and the second symmetrical metal patch are symmetrical along the central axis of the rectangular metal patch, and the first symmetrical metal patch, the second symmetrical metal patch and the rectangular metal patch form a slit therebetween.

[0021] Further, the driving unit controls the PIN diode in the PIN size gradient metasurface layer to be open and two PIN diodes in the PIN array metasurface layer to be closed based on the mode control signal, so that the PIN size gradient metasurface is placed in a reflection mode, or controls the PIN diode in the PIN size gradient metasurface layer to be closed and two PIN diodes in the PIN array metasurface layer to be one open and one closed, so that the PIN size gradient metasurface is placed in a transmission mode.

[0022] The application also provides a detection system comprising any antenna as described above.

[0023] Advantages

[0024] Compared with the prior art, the present application has the following advantages and positive effects: the PIN size gradient subunit is arranged in the present application, the size of the metal patch in the PIN size gradient subunit increases linearly in the uniform direction, the linear phase gradient distribution is constructed, the phase control unit calculates the beam pointing based on the received signal strength signal, and then generates the phase control signal and transmits it to the PIN driving unit, and then the PIN driving unit controls the beam deflection angle of the PIN size gradient metasurface based on the phase control signal, so as to realize the regulation and control of the beam deflection angle; the PIN size gradient metasurface layer with the linear phase gradient distribution can quickly and accurately regulate and control the beam deflection, adjust the beam pointing to align the main lobe to the target direction, thereby enhancing the signal receiving strength and greatly improving the anti-interference ability in harsh environment; the PIN driving unit controls the bias current size of the PIN diode in the PIN size gradient metasurface based on the phase control signal, so as to dynamically adjust the phase gradually approaching the expected phase in real time, thereby realizing the accurate regulation and control of the phase; the bias current size of the PIN diode is accurately regulated and controlled, and the environmental factor compensation model is constructed to adaptively and dynamically compensate the bias current of the PIN diode, thereby greatly improving the phase regulation accuracy; the detection device constructed in the present application has the characteristics of fast detection speed and strong anti-interference ability, can adapt to the rapid identification and tracking of the moving target in complex environment, and is especially suitable for the scenes such as unmanned aerial vehicles, satellites and other load-sensitive scenes. BRIEF DESCRIPTION OF DRAWINGS

[0025] Figure 1 is a structure schematic diagram of example 1 of the first embodiment of the present application;

[0026] Figure 2 is a structure schematic diagram of example 2 of the first embodiment of the present application;

[0027] Figure 3 is a structure schematic diagram of the PIN size gradient metasurface of the first embodiment of the present application;

[0028] Figure 4 is a structure schematic diagram of the metasurface unit of the first embodiment of the present application. DETAILED DESCRIPTION

[0029] The present application will be further described below in conjunction with specific embodiments. It should be understood that these embodiments are only used to illustrate the present application and not to limit the scope of the present application. In addition, it should be understood that those skilled in the art can make various modifications or changes to the present application after reading the content taught by the present application, and these equivalent forms also fall within the scope of the claims attached to the present application.

[0030] The first embodiment of the present application relates to an antenna based on metasurface phase control selection reflection and transmission mode, comprising:

[0031] PIN size gradient metasurface;

[0032] a signal strength acquisition unit configured to acquire a received signal strength;

[0033] a phase control unit configured to obtain a mode control signal and generate a beam pointing control signal based on the received signal strength;

[0034] a PIN driving unit configured to control the PIN size gradient metasurface to be in a reflection mode or a transmission mode based on the mode control signal and drive the PIN size gradient metasurface to adjust a beam deflection angle according to the beam pointing control signal.

[0035] More specifically, the PIN size gradient metasurface includes a PIN size gradient metasurface layer, a first dielectric layer, a signal isolation layer, a second dielectric layer, and a PIN array metasurface layer. The PIN size gradient metasurface layer is arranged on the upper surface of the first dielectric layer. The signal isolation layer is arranged between the first dielectric layer and the second dielectric layer. The PIN array metasurface layer is arranged on the lower surface of the second dielectric layer. The PIN driving unit is connected to the PIN size gradient metasurface layer and the PIN array metasurface layer, respectively. The PIN size gradient metasurface layer is connected to the PIN array metasurface layer. The PIN driving unit controls the state of the PIN diode in the PIN size gradient metasurface layer and the PIN array metasurface layer based on the mode control signal to control the PIN size gradient metasurface to be in a reflection mode state or a transmission mode state.

[0036] When the PIN size gradient metasurface is in the transmission mode state, the incident electromagnetic wave is transmitted from the PIN size gradient metasurface layer to the PIN array metasurface layer. When the PIN size gradient metasurface is in the reflection mode state, the incident electromagnetic wave is reflected by the PIN size gradient metasurface layer.

[0037] In some preferred embodiments, the PIN size gradient metasurface layer includes four PIN size gradient sub-units. The sizes of the metal patches in the four PIN size gradient sub-units increase uniformly in a direction. Each metal patch in the PIN size gradient sub-units is connected to the PIN driving unit through a PIN diode.

[0038] The slit metal patches in the PIN array metasurface layer are uniformly distributed on the lower surface of the second dielectric layer. Each slit metal patch in the PIN array metasurface layer is connected to the PIN driving unit through a PIN diode. The number of slit metal patches in the PIN array metasurface layer is the same as the number of metal patches in the PIN size gradient metasurface layer. Each slit metal patch in the PIN array metasurface layer is connected to a metal patch in the PIN size gradient metasurface layer one by one.

[0039] By setting the PIN size gradient metasurface layer metal patch size size increases in a direction of a uniform linear, the PIN size gradient metasurface layer phase distribution mode can be constructed as a linear phase gradient distribution, and the expression of the linear phase gradient of the PIN size gradient metasurface layer is as follows:

[0040]

[0041] Wherein, is a phase gradient, is a deflection angle.

[0042] Further, the phase acquisition unit can be constructed to collect the reflected wave phase signal or the transmitted wave phase signal and transmit it to the phase control unit. The phase control unit performs phase difference on the reflected wave phase signal or the transmitted wave phase signal and the expected phase. The phase control unit generates a phase control signal based on the phase difference result and transmits it to the PIN driving unit. The PIN driving unit controls the bias current size of the PIN diode in the PIN size gradient metasurface based on the phase control signal, and realizes accurate control of the phase.

[0043] More specifically, the phase control unit generates a phase control signal based on the phase difference result to control the bias current size of the PIN diode that needs to be adjusted, and the expression is as follows:

[0044]

[0045] Wherein, is the bias current size of the PIN diode that needs to be adjusted at t, is the phase difference between the measured phase and the expected phase at t.

[0046] The bias current of the PIN diode can also be adaptively dynamically compensated by constructing an environmental factor compensation model to improve the phase adjustment accuracy, and the expression is as follows:

[0047]

[0048] Wherein, is the bias current compensation, is the reference bias current, is the temperature compensation coefficient, is the temperature interference change, is the humidity compensation coefficient, is the humidity interference change, is the electromagnetic compensation coefficient, is the electromagnetic interference change.

[0049] For example, Figure 1As shown, the embodiment is based on one embodiment 1 of the PIN size gradient metasurface.

[0050] The embodiment 1 includes a phase control unit, a signal strength acquisition unit, a PIN driving unit and a PIN size gradient metasurface, the phase control unit is connected with the signal strength acquisition unit and the PIN driving unit respectively, the PIN driving unit is connected with the PIN size gradient metasurface, the signal strength acquisition unit acquires a received signal strength signal and transmits the received signal strength signal to the phase control unit, the phase control unit generates a beam pointing control signal based on the received signal strength signal and transmits the beam pointing control signal to the PIN driving unit, the PIN driving unit controls a beam deflection angle of the PIN size gradient metasurface based on the beam pointing control signal, and the phase control unit transmits a mode control signal to the PIN driving unit, and the PIN driving unit controls the PIN size gradient metasurface to be in a reflection mode state or a transmission mode state based on the mode control signal.

[0051] The PIN size gradient metasurface includes a PIN size gradient metasurface layer, a first dielectric layer, a signal isolation layer, a second dielectric layer and a PIN array metasurface layer, the PIN size gradient metasurface layer is arranged on an upper surface of the first dielectric layer, the signal isolation layer is arranged between the first dielectric layer and the second dielectric layer, the PIN array metasurface layer is arranged on a lower surface of the second dielectric layer, the PIN driving unit is connected with the PIN size gradient metasurface layer and the PIN array metasurface layer respectively, the PIN size gradient metasurface layer is connected with the PIN array metasurface layer, and the PIN driving unit controls the state of the PIN diode in the PIN size gradient metasurface layer and the PIN array metasurface layer based on the mode control signal to control the PIN size gradient metasurface to be in the reflection mode state or the transmission mode state. When the PIN size gradient metasurface is in the transmission mode state, the incident electromagnetic wave is transmitted from the PIN size gradient metasurface layer to the PIN array metasurface layer; and when the PIN size gradient metasurface is in the reflection mode state, the PIN size gradient metasurface layer reflects the incident electromagnetic wave.

[0052] The PIN size gradient metasurface layer includes four PIN size gradient sub-units, the sizes of the metal patches in the four PIN size gradient sub-units increase uniformly in a direction, and each metal patch in the PIN size gradient sub-unit is connected with the PIN driving unit through a PIN diode.

[0053] The gap metal patches in the PIN array metasurface layer are uniformly distributed on the lower surface of the second dielectric layer, and each gap metal patch in the PIN array metasurface layer is connected with the PIN diode and the PIN driving unit respectively, the number of gap metal patches in the PIN array metasurface layer is the same as the number of metal patches in the PIN size gradient metasurface layer, and the gap metal patches in the PIN array metasurface layer are connected with the metal patches in the PIN size gradient metasurface layer one by one.

[0054] By linearly increasing the size of the metal patches in the PIN size gradient metasurface layer in the extension direction, the phase distribution mode of the PIN size gradient metasurface layer is linear phase gradient distribution, and the expression of the linear phase gradient of the PIN size gradient metasurface layer is as follows:

[0055]

[0056] Wherein, is the phase gradient, is the deflection angle.

[0057] As Figure 2 shown, it is another embodiment 2 based on the PIN size gradient metasurface of the present embodiment.

[0058] The embodiment 2 increases the phase acquisition unit on the basis of the embodiment 1, the phase acquisition unit is connected with the phase control unit, and is used for acquiring the reflected wave phase signal or the transmitted wave phase signal and transmitting to the phase control unit. The phase control unit performs phase difference on the reflected wave phase signal or the transmitted wave phase signal and the expected phase, the phase control unit generates the phase control signal based on the phase difference result and transmits to the PIN driving unit, the PIN driving unit controls the bias current size of the PIN diode in the PIN size gradient metasurface based on the phase control signal, and realizes the adjustment of the phase.

[0059] The phase control unit generates the phase control signal based on the phase difference result to control the bias current size of the PIN diode to be adjusted, and the expression is as follows:

[0060]

[0061] Wherein, is the bias current size of the PIN diode to be adjusted at t, is the phase difference between the measured phase and the expected phase at t.

[0062] Still another embodiment 3 based on the PIN size gradient metasurface of the present embodiment increases the environmental factor compensation model on the basis of the embodiment 2.

[0063] The bias current of the PIN diode is adaptively and dynamically compensated by constructing an environmental factor compensation model to improve the phase adjustment accuracy. The expression is as follows:

[0064]

[0065] wherein, is the bias current compensation, is the reference bias current, is the temperature compensation coefficient, is the temperature interference change, is the humidity compensation coefficient, is the humidity interference change, is the electromagnetic compensation coefficient, is the electromagnetic interference change.

[0066] As Figure 3 shown, another embodiment 4 based on the PIN size gradient super surface is provided in the embodiment.

[0067] In the embodiment 4, the PIN size gradient unit includes a first PIN size gradient subunit 1, a second PIN size gradient subunit 2, a third PIN size gradient subunit 3, and a fourth PIN size gradient subunit 4. Each PIN size gradient subunit is composed of a plurality of metal patches 5 of different sizes uniformly distributed on the surface of the first dielectric layer, and the size of the metal patch 5 increases linearly in one direction to form a PIN size gradient subunit composed of an N×N metal patch array. By constructing a linear phase gradient distribution through the uniform linear increase of the size of the metal patch in the PIN size gradient subunit, the phase control unit generates a beam pointing control signal based on the received signal strength signal and transmits it to the PIN driving unit. The PIN driving unit controls the beam deflection angle of the PIN size gradient super surface based on the beam pointing control signal, thereby realizing the adjustment and control of the beam deflection angle.

[0068] Figure 3 In the embodiment, the PIN size gradient subunit composed of an 8×8 metal patch array, the size of the metal patch in the PIN size gradient subunit can increase linearly according to the size increase function The size increases sequentially along one direction. The four PIN size gradient sub-units are designated as the first PIN size gradient sub-unit, the second PIN size gradient sub-unit, the third PIN size gradient sub-unit, and the fourth PIN size gradient sub-unit. Optionally, the size of the metal patch in the first PIN size gradient sub-unit increases uniformly and linearly along the negative Y-axis and is evenly distributed in the upper right half of the upper surface of the dielectric layer. The size of the metal patch in the second PIN size gradient sub-unit increases uniformly and linearly along the negative X-axis and is evenly distributed in the lower right half of the upper surface of the dielectric layer. The size of the metal patch in the third PIN size gradient sub-unit increases uniformly and linearly along the positive Y-axis and is evenly distributed in the lower left half of the upper surface of the dielectric layer. The size of the metal patch in the fourth PIN size gradient sub-unit increases uniformly and linearly along the positive X-axis and is evenly distributed in the upper left half of the upper surface of the dielectric layer.

[0069] The slot metal patches in the PIN array metasurface layer are uniformly distributed on the lower surface of the second dielectric layer, and each slot metal patch in the PIN array metasurface layer is connected to the PIN driving unit through a PIN diode. The number of slot metal patches in the PIN array metasurface layer is the same as the number of metal patches in the PIN size gradient metasurface layer, and the slot metal patches in the PIN array metasurface layer are connected one by one to the metal patches in the PIN size gradient metasurface layer.

[0070] like Figure 4 As shown, the gap metal patch includes a first symmetrical metal patch 602, a second symmetrical metal patch 603, and a rectangular metal patch 601. The rectangular metal patch 601 is located at the middle of the first symmetrical metal patch 602 and the second symmetrical metal patch 603, and there are gaps between the rectangular metal patch 601 and the first symmetrical metal patch 602 and the second symmetrical metal patch 603. The rectangular metal patch 601 is connected to the metal patch in the PIN size gradient metasurface. One end of the rectangular metal patch 601 is connected to the first symmetrical metal patch 602 via the first PIN diode 604, and the other end of the rectangular metal patch 601 is connected to the second symmetrical metal patch 603 via the second PIN diode 605. That is, the positive terminal of the first PIN diode 604 is connected to the first symmetrical metal patch 602, the negative terminal of the first PIN diode 604 is connected to one end of the rectangular metal patch 601, the positive terminal of the second PIN diode 605 is connected to the second symmetrical metal patch 603, and the negative terminal of the second PIN diode 605 is connected to the other end of the rectangular metal patch 601.

[0071] The PIN driving unit controls the PIN diode state in the PIN size gradient super surface layer and the PIN array super surface layer based on the mode control signal to control the PIN size gradient super surface to be in a reflection mode state or a transmission mode state. For example, the PIN driving unit controls the PIN diode state in the PIN size gradient super surface layer to be in an open state based on a reflection mode control signal, while controlling the first and second PIN diode states in the PIN array super surface layer to be in a closed state, to achieve control of the PIN size gradient super surface to be in a reflection mode state. The PIN driving unit controls the PIN diode state in the PIN size gradient super surface layer to be in a closed state based on a transmission mode control signal, while controlling the first PIN diode state in the PIN array super surface layer to be in a closed state and the second PIN diode state to be in an open state, to achieve control of the PIN size gradient super surface to be in a transmission mode state.

[0072] The phase distribution mode of the PIN size gradient super surface layer is linear phase gradient distribution by the uniform linear increase of the size of the metal patch in the PIN size gradient super surface layer in the extension direction. Therefore, the expression of the linear phase gradient of the PIN size gradient super surface layer is as follows:

[0073]

[0074] wherein, is the phase gradient, is the deflection angle.

[0075] The PIN size gradient super surface layer with linear phase gradient distribution can quickly and accurately control the beam deflection angle. For example, the signal strength acquisition unit acquires the received signal strength signal and transmits it to the phase control unit. The phase control unit generates a beam pointing control signal based on the received signal strength signal and transmits it to the PIN driving unit. The PIN driving unit controls the beam deflection angle of the PIN size gradient super surface based on the beam pointing control signal. The PIN size gradient super surface layer with linear phase gradient distribution can quickly and accurately control the beam deflection, adjust the beam pointing to align the main lobe with the target direction, thereby enhancing the signal reception strength and greatly improving the anti-interference ability in harsh environments.

[0076] In order to accurately control the phase of the signal, a phase acquisition unit can also be constructed to acquire the reflected wave phase signal or the transmitted wave phase signal and transmit it to the phase control unit. The phase control unit performs phase difference between the reflected wave phase signal or the transmitted wave phase signal and the expected phase. The phase control unit generates a phase control signal based on the phase difference result and transmits it to the PIN driving unit. The PIN driving unit controls the bias current size of the PIN diode in the PIN size gradient metasurface based on the phase control signal, so as to adjust the phase. Therefore, by accurately controlling the bias current of the PIN diode, the phase can be accurately controlled.

[0077] The phase control unit generates a phase control signal based on the phase difference result to control the bias current size of the PIN diode that needs to be adjusted. The expression is as follows:

[0078]

[0079] Among them, is the bias current size of the PIN diode that needs to be adjusted at time t, is the phase difference between the measured phase and the expected phase at time t.

[0080] For example, the phase acquisition unit acquires the transmitted wave phase signal and transmits it to the phase control unit. The phase control unit performs phase difference between the transmitted wave phase signal and the expected phase. The phase control unit calculates the bias current value of the PIN diode that needs to be adjusted according to the phase difference processing result. The phase control unit generates a phase control signal based on the bias current value of the PIN diode that needs to be adjusted and transmits it to the PIN driving unit. The PIN driving unit controls the bias current size of the PIN diode in the PIN size gradient metasurface based on the phase control signal, so as to gradually approach the expected phase of the transmitted wave, thereby realizing accurate control of the phase.

[0081] In order to further improve the phase adjustment control accuracy, the bias current of the PIN diode is adaptively dynamically compensated by constructing an environmental factor compensation model. The environmental factors include temperature, humidity and electromagnetic interference. By adaptively compensating the bias current of the PIN diode according to the environmental factors, the phase adjustment accuracy is greatly improved.

[0082] The bias current of the PIN diode is adaptively dynamically compensated by constructing an environmental factor compensation model. The expression is as follows:

[0083]

[0084] Among them, is the bias current compensation, is the reference bias current, is the temperature compensation coefficient, is a temperature interference change amount, is a humidity compensation coefficient, is a humidity interference change amount, is an electromagnetic compensation coefficient, is an electromagnetic interference change amount.

[0085] A second embodiment of the application relates to a probe device comprising an antenna as described above.

[0086] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the above-described system and unit can refer to the corresponding processes in the foregoing method embodiments, which will not be described here. The terms "first", "second", and "third" and the like in the specification and the above drawings are used to distinguish similar objects, and do not necessarily have to be used to describe a specific order or sequence.

[0087] The above embodiments are only used to illustrate the technical solutions of the present application, but not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacements for some technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A metasurface-based antenna for phase-controlled selective reflection, transmission mode, characterized in that, The PIN size gradient metasurface comprises a PIN size gradient metasurface layer, a first dielectric layer, a signal isolation layer, a second dielectric layer and a PIN array metasurface layer which are sequentially stacked, wherein the PIN size gradient metasurface layer is arranged on the upper surface of the first dielectric layer and comprises four PIN size gradient subunits, each of which is uniformly distributed with a plurality of gradient metal patches, each of which is electrically connected with a PIN diode and a PIN driving unit, the size of the gradient metal patches in the same PIN size gradient subunit increases uniformly along a direction, the PIN array metasurface layer is uniformly distributed with a plurality of slot metal patches corresponding to the gradient metal patches, each of which is connected with a corresponding slot metal patch and is electrically connected with the PIN driving unit through a PIN diode. The signal strength acquisition unit is used to acquire the received signal strength. The phase control unit is used to obtain a mode control signal and generate a beam pointing control signal based on the received signal strength. The PIN driving unit is used to control the switching state of the PIN diodes in the PIN size gradient metasurface layer and the PIN array metasurface layer based on the mode control signal, so that the PIN size gradient metasurface is placed in a reflection or transmission mode, and the PIN size gradient metasurface adjusts the beam deflection angle according to the beam pointing control signal. The phase acquisition unit is also used to acquire a reflected wave phase signal or a transmitted wave phase signal; the phase control unit generates a phase control signal based on the phase difference between the acquired phase signal and the expected phase, and the PIN driving unit controls the bias current of the PIN diodes in the PIN size gradient metasurface layer to be a target size based on the phase control signal, so as to adjust the reflected wave or the transmitted wave to be the expected phase.

2. The antenna according to claim 1, characterized in that, The target size of the bias current of the PIN diodes in the PIN size gradient metasurface layer is represented as 3. The antenna of claim 2, wherein, The environmental parameter acquisition unit is also used to acquire environmental parameters; the phase control unit dynamically compensates the target size of the bias current of the PIN diodes in the PIN size gradient metasurface layer based on the acquired environmental parameters. ， wherein, is a target size of the PIN diode bias current in the PIN size gradient metasurface layer at time t, is a phase difference between the phase signal collected at time t and the expected phase.

4. The antenna according to claim 3, characterized in that The target size of the bias current of the PIN diodes after compensation is represented as:

5. The antenna according to claim 4, characterized in that, The slot metal patch comprises a rectangular metal patch connected with the corresponding gradient metal patch, one side of the rectangular metal patch is electrically connected with a first symmetrical metal patch through a PIN diode, and the other side is electrically connected with a second symmetrical metal patch through a symmetrical PIN diode; the first symmetrical metal patch and the second symmetrical metal patch are symmetrical along the central axis of the rectangular metal patch, and the first symmetrical metal patch, the second symmetrical metal patch and the rectangular metal patch form a slot therebetween. ， wherein, is a target size of the post-offset current, is a reference offset current, is a temperature compensation coefficient, is a temperature disturbance variation, is a humidity compensation coefficient, is a humidity disturbance variation, is an electromagnetic compensation coefficient, is an electromagnetic disturbance variation.

6. The antenna according to claim 1, wherein, The PIN driving unit controls the PIN diodes in the PIN size gradient metasurface layer to be opened and the two PIN diodes in the PIN array metasurface layer to be closed based on the mode control signal, so that the PIN size gradient metasurface is placed in a reflection mode, or controls the PIN diodes in the PIN size gradient metasurface layer to be closed and the two PIN diodes in the PIN array metasurface layer to be one opened and one closed, so that the PIN size gradient metasurface is placed in a transmission mode.

7. The antenna according to claim 6, characterized in that ​ 8. A detection system characterized by, An antenna comprising any of claims 1-7.

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