Display device and light absorption layer barrier rib structure

Abstract

Disclosed are a display device and a light absorbing layer barrier rib structure. The display device includes a first light emitting device, a second light emitting device, and a third light emitting device disposed on a substrate; first and second color conversion layers disposed on the first and second light emitting devices, respectively; a transmission layer disposed on the third light emitting device; and a multilayer film barrier rib structure disposed on the first color conversion layer, the second color conversion layer, and the transmissive layer, and including a transparent inorganic layer and a transparent organic layer alternately deposited. A light absorption layer barrier rib structure including a blackening member and a blackening protection member on the blackening member is disposed on a side surface of the multilayer film barrier rib structure, and the light absorption layer barrier rib structure has a plurality of openings corresponding to the first light emitting device, the second light emitting device, and the third light emitting device, respectively.

Description

Technical Field

[0001] The disclosure relates to a light absorbing layer barrier rib structure, a display device using the same, and a manufacturing method thereof. The light absorbing layer barrier rib structure can absorb all light obliquely entering from the inside and outside, is durable, and can be manufactured by CVD deposition. Background Art

[0002] Among display devices, organic light emitting display devices are attracting attention as next-generation display devices due to wide viewing angles, excellent contrast, and fast response speed.

[0003] Generally, an organic light emitting display apparatus includes a thin film transistor and an organic light emitting device on a substrate, and the organic light emitting device operates by emitting light by itself.

[0004] These organic light emitting display devices are sometimes used as display units for small products such as mobile phones or display units for large products such as televisions.

[0005] In organic light emitting display devices, there is an increasing demand for providing accurate and vivid colors while providing larger and thinner displays.

[0006] For this reason, research is actively being conducted on a light absorbing layer barrier rib structure that suppresses or prevents light leakage from an organic light emitting display device.

[0007] However, there still exists the problem that the light absorbing layer barrier rib structure must exceed a certain thickness to absorb all oblique internal and external light, causing side surface step coverage problems and accelerating side damage during the patterning process of the light absorbing layer barrier rib structure. Summary of the Invention

[0008] The disclosure is directed to solving several problems including the above problems to provide a robust light absorbing layer barrier rib structure that prevents damage to side surfaces of the light absorbing layer barrier rib structure, protects the side surfaces, and is not affected by tetramethylammonium hydroxide (TMAH, a developer) or water washing used in an anisotropic dry etching process.

[0009] However, this does not limit the scope of the disclosure.

[0010] A display device according to a disclosed embodiment may include: first, second, and third light-emitting devices disposed on a substrate; a first color conversion layer and a second color conversion layer, the first color conversion layer disposed on the first light-emitting device and the second color conversion layer disposed on the second light-emitting device; a transmissive layer disposed on the third light-emitting device; and a multilayer film barrier rib structure disposed on the first, second, and transmissive layers. The multilayer film barrier rib structure may include alternately deposited transparent inorganic layers and transparent organic layers, a light-absorbing layer barrier rib structure including a blackened member and a blackened protective member on the blackened member may be disposed on side surfaces of the multilayer film barrier rib structure, and the light-absorbing layer barrier rib structure may have a plurality of openings in a first light-emitting region of the first light-emitting device, a second light-emitting region of the second light-emitting device, and a third light-emitting region of the third light-emitting device.

[0011] The transparent inorganic layer may include a silicon nitride compound, and the transparent organic layer may include an imide-based polymer.

[0012] The transparent inorganic layer may be deposited to a thickness in the range of about 0.1K to about 1K, the transparent organic layer may be deposited to a thickness in the range of about 2K to about 4K, and the total height of the multi-layer film barrier rib structure may be in the range of about 7K to about 9K.

[0013] The blackening member may include a reflective metal layer and a CVD-deposited blackening layer disposed on a side surface of the reflective metal layer.

[0014] The reflective metal layer may include aluminum (Al) for low-temperature film formation, and the CVD-deposited blackening layer may include amorphous silicon.

[0015] The reflective metal layer may have a thickness in a range of about 100 Å to about 300 Å, and the CVD-deposited blackening layer may have a thickness in a range of about 500 Å to about 1,500 Å.

[0016] The blackened protective member may include SiO 2 and may be deposited by CVD to a thickness in a range of about 300 Å to about 600 Å.

[0017] The light absorbing layer barrier rib structure according to the disclosed embodiment may include: a multilayer barrier rib structure including alternately deposited transparent inorganic layers and transparent organic layers; a blackening member CVD-deposited on one side of the multilayer barrier rib structure; and a blackening protection member on the blackening member.

[0018] The transparent inorganic layer may include a silicon nitride compound, and the transparent organic layer may include an imide-based polymer.

[0019] The transparent inorganic layer may be deposited to a thickness in the range of about 0.1K to about 1K, the transparent organic layer may be deposited to a thickness in the range of about 2K to about 4K, and the total height of the multi-layer barrier rib structure may be in the range of about 7K to about 9K.

[0020] The blackening member may include a reflective metal layer and a CVD-deposited blackening layer disposed on a side surface of the reflective metal layer.

[0021] The reflective metal layer may include aluminum (Al) for low-temperature film formation, and the CVD-deposited blackening layer may include amorphous silicon.

[0022] The reflective metal layer may have a thickness in a range of about 100 Å to about 300 Å, and the CVD deposited blackening layer may have a thickness in a range of about 500 Å to about 1500 Å.

[0023] The blackened protective member may include SiO 2 and may be deposited by CVD to a thickness in a range of about 300 Å to about 600 Å.

[0024] According to the disclosed embodiment, the method for manufacturing a light absorbing layer barrier rib structure may include the following steps: constructing a multilayer barrier rib structure in which transparent inorganic layers and transparent organic layers are alternately arranged on an upper portion of a substrate by CVD deposition; patterning the multilayer barrier rib structure by dry etching to form a patterned multilayer barrier rib structure; forming a blackening member on the patterned multilayer barrier rib structure by CVD deposition; forming a blackening member protective film on the blackening member by CVD deposition; and removing the blackening member on the upper and lower portions of the multilayer barrier rib structure by anisotropic dry etching.

[0025] The step of constructing a multi-layer barrier rib structure may include stacking a transparent inorganic layer on a substrate and stacking a transparent organic layer on top of the transparent inorganic layer, the transparent inorganic layer may include a silicon nitride compound, the transparent organic layer may include an imide-based polymer, the step of forming a blackening member may include depositing a reflective metal layer using aluminum (Al) CVD and depositing a blackening layer using amorphous silicon CVD, and the step of forming a blackening member protective film may include forming the blackening member protective film using SiO2 through CVD deposition.

[0026] According to the disclosed embodiments, a method for manufacturing a display device may include the following steps: forming a first light-emitting device, a second light-emitting device, and a third light-emitting device on a substrate; forming a first color conversion layer on the first light-emitting device, forming a second color conversion layer on the second light-emitting device, and forming a transmissive layer on the third light-emitting device; forming a light-absorbing layer barrier rib structure on the first color conversion layer, the second color conversion layer, and the transmissive layer, the light-absorbing layer barrier rib structure comprising a multilayer film barrier rib structure in which transparent inorganic layers and transparent organic layers are alternately deposited; and CVD-depositing a blackening member on side surfaces of the multilayer film barrier rib structure, and CVD-depositing a blackening protective member on the blackening member. The aperture ratios of the plurality of openings formed in the light-absorbing layer barrier rib structure corresponding to the first light-emitting device, the second light-emitting device, and the third light-emitting device, respectively, may be different.

[0027] The step of forming a light absorbing layer barrier rib structure may include the following steps: constructing a multilayer barrier rib structure in which transparent inorganic layers and transparent organic layers are alternately arranged on a substrate by CVD deposition; patterning the multilayer barrier rib structure by dry etching to form a patterned multilayer barrier rib structure; forming a blackened member on the patterned multilayer barrier rib structure by CVD deposition; forming a blackened member protective film on the blackened member by CVD deposition; and removing the blackened member on the upper and lower portions of the multilayer barrier rib structure by anisotropic dry etching.

[0028] The step of forming the blackening member may include depositing a reflective metal layer using aluminum (Al) CVD and depositing a blackening layer using amorphous silicon CVD.

[0029] The step of constructing a multilayer barrier rib structure may include constructing a multilayer structure in which a transparent inorganic layer is stacked on a substrate and a transparent organic layer is stacked on top of the transparent inorganic layer, the transparent inorganic layer may include a silicon nitride compound, the transparent organic layer may include an imide polymer, and the step of forming a blackening member protective film may include forming the blackening member protective film using SiO2 by CVD deposition.

[0030] According to the disclosed embodiments, tetramethylammonium hydroxide (TMAH, developer) used in an anisotropic dry etching process can prevent damage to and protect the side surfaces of an MTO / Mo / MTO triple-layer sandwich light absorbing layer barrier rib structure, and optionally, a robust light absorbing layer barrier rib structure that is not affected by water washing can be provided.

[0031] According to the light absorbing layer barrier rib structure according to the disclosed embodiment, a three-layer blackening member can be formed on the side of the multi-layer barrier rib member by chemical vapor deposition of aluminum (Al) and amorphous silicon (a-Si), thereby forming a fine structure, which can improve the step coverage of the thickness ratio of the upper deposition layer and the lower deposition layer in the defined depth direction, and can form a low-reflection thin film structure using an a-Si / Al / a-Si blackening film.

[0032] According to the light absorbing layer barrier rib structure according to the disclosed embodiment, the MTO / Mo / MTO three-layer light absorbing layer can be formed on the organic film barrier rib member, and the organic film barrier rib member can be formed by a low temperature process. Although there may be a problem that the barrier rib member may be unstable, the stability of the barrier rib structure can be improved by using a transparent inorganic layer (SiO2 or SiN x ) / transparent organic layer cross-stacked structure to ensure.

[0033] According to the disclosed embodiments, the blackened film protection layer may prevent the side surfaces of the light absorbing layer barrier rib structure from being damaged by a developer or a cleaning solution when the upper and lower portions of the light absorbing layer barrier rib structure are removed.

[0034] It can be seen that the light absorbing layer barrier rib structure according to the disclosed embodiment can transmit light nearly vertically relative to the multilayer barrier rib structure in which transparent organic layers and transparent inorganic layers are alternately stacked, and transmit oblique internal light incidence. Optionally, it can be seen that all external light is absorbed by the CVD blackening layer of amorphous silicon (a-Si) on which a blackening member formed on the side of the multilayer barrier rib structure can be CVD-deposited. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 is a plan view of a display device according to a disclosed embodiment.

[0036] Figure 2 is a schematic cross-sectional view of a display device according to a disclosed embodiment.

[0037] Figure 3 is a schematic cross-sectional view of a display device according to a disclosed embodiment.

[0038] Figure 4 is a schematic cross-sectional view of a light absorbing layer barrier rib structure according to a disclosed embodiment.

[0039] Figure 5 is a schematic cross-sectional view of a light absorbing layer barrier rib structure according to an embodiment of another aspect of the disclosure.

[0040] Figure 6 It shows Figure 5 Schematic cross-sectional view of the light path of the light absorbing layer blocking rib structure.

[0041] Figure 7 is a flow chart illustrating a method of manufacturing a light absorbing layer barrier rib structure according to an embodiment of another aspect of the disclosure.

[0042] Figure 8 FIG. 1 is a schematic diagram illustrating a method of manufacturing a light absorbing layer barrier rib structure according to another embodiment of the present disclosure.

[0043] Figure 9 is a schematic diagram for maximizing the low reflection effect.

[0044] Figure 10 is a graph showing the relationship between the extinction coefficient and transmittance of a medium.

[0045] Figure 11 is a graph showing reflectivity according to the thickness of a blackening layer formed on a reflective metal layer.

[0046] Figure 12 is a graph showing the characteristics of a blackened film due to interference and absorption caused by reflection of a reflective metal layer.

[0047] Figure 13 is a graph showing transmittance according to the thickness of a-Si film based on glass.

[0048] Figure 14 is a graph showing reflectivity according to the thickness of an amorphous silicon film when the amorphous silicon film is formed on an aluminum (Al) reflective metal layer.

[0049] Figure 15 FIG. 5 is a graph showing the reflectivity of an a-Si / Al / a-Si blackened film structure according to the a-Si thickness.

[0050] Figure 16 Graph showing reflectivity of an a-Si / Ti / a-Si blackened film structure according to a-Si thickness. DETAILED DESCRIPTION

[0051] Since the disclosure can be modified in various ways and can have various embodiments, specific embodiments will be shown in the drawings and described in detail in the detailed description.

[0052] The disclosed effects and features and methods for achieving the same will become clear by referring to the embodiments described below in detail with reference to the accompanying drawings.

[0053] However, the disclosure is not limited to the embodiments disclosed below and can be implemented in various forms.

[0054] Hereinafter, the disclosed embodiments will be described in detail with reference to the accompanying drawings, and when describing with reference to the accompanying drawings, the same or corresponding components will be assigned the same reference numerals and reference signs and redundant descriptions thereof will be omitted.

[0055] Although the terms "first," "second," etc. may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. Thus, a first element discussed below could be named a second element without departing from the teachings of the disclosure.

[0056] The terminology used herein is for the purpose of describing particular embodiments and is not intended to be limiting. As used herein, unless the context clearly indicates otherwise, the singular forms "a," "an," and "the" are intended to include the plural forms as well. In addition, when used in this specification, the terms "comprises," "includes," and / or variations thereof specify the presence of stated features, integers, steps, operations, elements, components, and / or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0057] When an element or layer is referred to as being “on,” “connected to,” or “bound to” another element or layer, it may be directly on, directly connected to, or directly bound to the other element or layer, or there may be intervening elements or layers. However, when an element or layer is referred to as being “directly on,” “directly connected to,” or “directly bound to” another element or layer, there may be no intervening elements or layers. For this purpose, the term “connected” may refer to a physical connection, an electrical connection, and / or a fluid connection, with or without intervening elements. Furthermore, when an element is referred to as being “in contact with” or “contacting” another element, etc., the element may be “electrically in contact with” or “physically in contact with” the other element; or “indirectly in contact with” or “directly in contact with” the other element.

[0058] As used herein, "about" or "approximately" is inclusive of the stated value and means within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art, taking into account the measurements in question and errors associated with the measurement of the particular quantity (i.e., limitations of the measurement system). For example, "about" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the stated value.

[0059] In the specification and claims, for the purposes of its meaning and interpretation, the phrase "at least one of..." is intended to include the meaning of "at least one of the group of..." For example, "at least one of A and B" may be understood to mean "A, B, or A and B." In the specification and claims, for the purposes of its meaning and interpretation, the term "and / or" is intended to include any combination of the terms "and" and "or." For example, "A and / or B" may be understood to mean "A, B, or A and B." The terms "and" and "or" may be used in a conjunction or disjunction sense and may be understood to be equivalent to "and / or."

[0060] In this specification, the x-axis, the y-axis, and the z-axis are not limited to the three axes in the Cartesian coordinate system, but may be broadly interpreted to include these.

[0061] For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but may also refer to different directions that are not orthogonal to each other.

[0062] Spatially relative terms such as "below," "beneath," "beneath," "down," "above," "upper," "over (throughout)," "higher," "side" (e.g., as in "sidewall"), and the like may be used herein for descriptive purposes to describe the relationship of one element to another element(s) as shown in the accompanying drawings. Spatially relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture in addition to the orientation depicted in the accompanying drawings. For example, if the device in the drawings is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "below" can encompass both above and below orientations. Furthermore, the device may be otherwise oriented (e.g., rotated 90 degrees or at other orientations), and as such, the spatially relative descriptors used herein should be interpreted accordingly.

[0063] The use of cross hatching and / or shading in the drawings is generally provided to clarify the boundaries between adjacent elements. Thus, unless otherwise specified, the presence or absence of cross hatching or shading does not convey or indicate any preference or requirement for the specific material, material properties, size, ratio, commonality between the elements shown, and / or any other characteristics, attributes, properties, etc. of the elements. In addition, in the drawings, the size and relative size of the elements may be exaggerated for clarity and / or descriptive purposes. When embodiments can be implemented differently, a specific process sequence may be performed differently from the described sequence. For example, two processes described in succession may be performed substantially simultaneously or in an order opposite to the described sequence.

[0064] Unless otherwise defined or implied herein, all terms (including technical and scientific terms) used have the same meaning as commonly understood by those skilled in the art to which the present disclosure belongs. It will also be understood that terms (such as those defined in general dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and should not be interpreted in an idealized or overly formal sense unless explicitly defined in the specification.

[0065] Hereinafter, the display device 1 according to the disclosed embodiment will be described by taking an organic light emitting display device as an example, but the disclosed display device 1 is not limited thereto.

[0066] As another example, the disclosed display device 1 may be an inorganic light-emitting display device or a display device such as a quantum dot light-emitting display device.

[0067] For example, a display element (eg, a light-emitting layer of a light-emitting device) provided in the display apparatus 1 may include an organic material, an inorganic material, quantum dots, an organic material and quantum dots, or an inorganic material and quantum dots.

[0068] Figure 1 is a plan view of a display device according to a disclosed embodiment.

[0069] Reference Figure 1 , the display device 1 may include a display area DA and a peripheral area PA disposed adjacent to the display area DA.

[0070] The display device 1 may provide an image using light emitted from a plurality of pixels P arranged in the display area DA.

[0071] Hereinafter, in this specification, a pixel P may mean a sub-pixel substantially including one organic light emitting diode.

[0072] The display area DA may include pixels P connected to data lines DL extending in the y-direction and scan lines SL extending in the x-direction intersecting the y-direction.

[0073] Each pixel P may also be connected to a driving voltage line PL extending in the y-direction.

[0074] Each pixel P may include an organic light emitting diode (OLED) such as Figure 3 ) of the light-emitting device.

[0075] Each pixel P may emit, for example, red light, green light, blue light, or white light through an organic light emitting diode OLED.

[0076] For example, the pixel P can be formed by means of a color conversion layer (QD1, QD2, see Figure 3) The color of each pixel P is achieved independently of the color emitted by the organic light emitting diode OLED included in each pixel P.

[0077] Each pixel P may be electrically connected to a built-in circuit disposed in the peripheral area PA.

[0078] The first power wiring 10 , the second power wiring 20 , and a pad (or “land”) portion 30 may be provided in the peripheral area PA.

[0079] The first power wiring 10 may be arranged to correspond to one side of the display area DA and connected to a plurality of driving voltage lines PL that transmit a driving voltage to the pixels P.

[0080] The second power wiring 20 may have a ring shape with a side opening in a plan view, and may partially surround the display area DA.

[0081] The pad part 30 may include a plurality of pads 31 and may be disposed on one side of the substrate 100 .

[0082] Each pad 31 may be connected to the first connection wiring 41 connected to the first power wiring 10 or the connection wiring CW extending to the display area DA.

[0083] The pads 31 of the pad part 30 may be exposed without being covered by the insulating layer and may be electrically connected to the printed circuit board PCB.

[0084] The terminal portion PCB-P of the printed circuit board PCB may be electrically connected to the pad portion 30 .

[0085] The printed circuit board PCB may transmit a signal or power from a control unit (not shown) to the pad 30 .

[0086] The control unit may supply a driving voltage and a common voltage to the first power wiring 10 and the second power wiring 20 through the first connection wiring 41 and the second connection wiring 42 , respectively.

[0087] The data driving circuit 60 may be electrically connected to the data lines DL.

[0088] The data signal of the data driving circuit 60 may be provided to each pixel P through the connection wiring CW connected to the pad portion 30 and the data line DL connected to the connection wiring CW.

[0089] The dam 70 may be provided in the peripheral area PA.

[0090] When the thin film encapsulation layer 300 is formed (see Figure 3 ) of the organic encapsulation layer 320 (see Figure 3), the dam portion 70 can block the organic material from flowing toward the edge of the substrate 100 , thereby preventing the formation of an edge tail of the organic encapsulation layer 320 .

[0091] The dam 70 may surround at least a portion of the display area DA in the peripheral area PA.

[0092] The dam portion 70 may include a plurality of dams, and the dams may be spaced apart from each other.

[0093] In the peripheral area PA, the dam 70 may be disposed closer to the display area DA than the sealing member CS.

[0094] In an embodiment, the peripheral area PA may further be provided with a built-in driving circuit (not shown) that provides a scan signal to each pixel P.

[0095] In some embodiments, the built-in driving circuit and the dam 70 may be overlapped in a plan view.

[0096] The display device 1 may be formed by bonding the substrate 100 and the upper substrate 100 ′ by the sealing member CS.

[0097] The sealing member CS may surround the display area DA along the peripheral area PA of the substrate 100 and bond the substrate 100 and the upper substrate 100 ′.

[0098] In an embodiment, in the case where the display device 1 has flexible characteristics, the upper substrate 100 ′ and the sealing member CS may be omitted.

[0099] Figure 2 is a schematic cross-sectional view of a display device according to a disclosed embodiment.

[0100] Reference Figure 2 , the first pixel Pr, the second pixel Pg, and the third pixel Pb may include a first light emitting device ED1, a second light emitting device ED2, and a third light emitting device ED3, respectively.

[0101] The first, second, and third light emitting devices ED1, ED2, and ED3 may be arranged to be spaced apart from each other.

[0102] The first light emitting device ED1 , the second light emitting device ED2 , and the third light emitting device ED3 may emit light and serve as light sources.

[0103] For example, the first light emitting device ED1 , the second light emitting device ED2 , and the third light emitting device ED3 may all be organic light emitting diodes OLED.

[0104] However, the disclosure is not limited thereto, and the first light emitting device ED1 , the second light emitting device ED2 , and the third light emitting device ED3 may be another light source.

[0105] In another embodiment, the first light emitting device ED1 , the second light emitting device ED2 , and the third light emitting device ED3 may emit inorganic light or quantum dot light.

[0106] The wavelength control layer 400 may be located on the first, second, and third light emitting devices ED1, ED2, and ED3.

[0107] The wavelength control layer 400 may include a first color conversion layer QD1 corresponding to the first light emitting device ED1 , a second color conversion layer QD2 corresponding to the second light emitting device ED2 , and a transmission layer TL corresponding to the third light emitting device ED3 .

[0108] The first color conversion layer QD1 and the second color conversion layer QD2 may each include quantum dots.

[0109] The wavelength of light passing through the first and second color conversion layers QD1 and QD2 may be changed by the quantum dots.

[0110] The transmission layer TL may not include quantum dots, and thus, light passing through the transmission layer TL may be emitted to the outside without changing its wavelength.

[0111] Barrier ribs 410 may be positioned between the first color conversion layer QD1 , the second color conversion layer QD2 , and the transmission layer TL.

[0112] In an embodiment, the barrier ribs 410 may include a light blocking material.

[0113] The optical function layer 500 may be disposed on the wavelength control layer 400 .

[0114] The optical function layer 500 may include a plurality of openings OP formed in the first light emitting area Pr-EA of the first light emitting device ED1 , the second light emitting area Pg-EA of the second light emitting device ED2 , and the third light emitting area Pb-EA of the third light emitting device ED3 .

[0115] In an embodiment, the openings OP may include a first opening OP1 corresponding to the first light emitting region Pr-EA, a second opening OP2 corresponding to the second light emitting region Pg-EA, and a third opening OP3 corresponding to the third light emitting region Pb-EA.

[0116] Each of the first opening OP1 , the second opening OP2 , and the third opening OP3 may be provided to have an aperture ratio for each pixel P.

[0117] Figure 3 is a schematic cross-sectional view of a display device according to a disclosed embodiment.

[0118] Reference Figure 3, first to third pixels Pr, Pg, and Pb may be disposed on the substrate 100 .

[0119] The first to third pixels Pr, Pg, Pb may each include first to third light emitting devices ED1, ED2, and ED3 and a pixel circuit PC, and each of the first to third light emitting devices ED1, ED2, and ED3 may be electrically connected to the pixel circuit PC so that light emission may be controlled.

[0120] In an embodiment, the first to third light emitting devices ED1 , ED2 , and ED3 may be first to third organic light emitting diodes OLED1 , OLED2 , OLED3 .

[0121] In the following description, since the pixel circuit PC included in each of the first to third pixels Pr, Pg, and Pb has the same structure, the stacked structure will be described below centering on one pixel.

[0122] In an embodiment, the substrate 100 may include glass or a polymer resin.

[0123] In an embodiment, the substrate 100 may include a plurality of sub-layers.

[0124] The sub-layer may have a structure in which organic layers and inorganic layers are alternately stacked on each other.

[0125] A display layer 200 including a light emitting device and a thin film encapsulation layer 300 covering the display layer 200 may be disposed on the substrate 100 .

[0126] Hereinafter, the display layer 200 will be described in detail.

[0127] The buffer layer 201 may be formed on the substrate 100 to prevent impurities from penetrating into the semiconductor layer Act of the thin film transistor TFT.

[0128] The buffer layer 201 may be a single layer or a plurality of layers including an inorganic insulating material.

[0129] The pixel circuit PC may be disposed on the buffer layer 201 .

[0130] A pixel circuit PC may be arranged to correspond to each pixel P.

[0131] The pixel circuit PC may include a thin film transistor TFT and a storage capacitor Cst.

[0132] The thin film transistor TFT may include a semiconductor layer Act, a gate electrode GE, a source electrode SE, and a drain electrode DE. A first insulating layer 203 may be provided on the buffer layer 201 and the semiconductor layer Act.

[0133] The storage capacitor Cst may include a first electrode CE1 and a second electrode CE2 overlapping each other in a plan view with a first interlayer insulating layer 205 interposed therebetween.

[0134] The storage capacitor Cst may overlap the thin film transistor TFT in a plan view.

[0135] The pixel circuit PC including the thin film transistor TFT and the storage capacitor Cst may be covered with a first planarization insulating layer 208 .

[0136] The first planarization insulating layer 208 may have a substantially flat upper surface.

[0137] A second interlayer insulating layer 207 may be further disposed under the first planarization insulating layer 208 .

[0138] The pixel circuit PC may be electrically connected to the pixel electrode 210 .

[0139] A contact metal layer CM may be interposed between the thin film transistor TFT and the pixel electrode 210 .

[0140] The contact metal layer CM may be connected to the thin film transistor TFT through a contact hole formed in the first planarization insulating layer 208 , and the pixel electrode 210 may be connected to the contact metal layer CM through a contact hole formed in the second planarization insulating layer 209 on the contact metal layer CM.

[0141] First to third organic light emitting diodes OLED1 , OLED2 , and OLED3 may be disposed on the second planarization insulating layer 209 .

[0142] In an embodiment, each of the first to third organic light emitting diodes OLED1 , OLED2 , OLED3 may include a pixel electrode 210 , a first common layer 221 , a light emitting layer 222 , a second common layer 223 , and an opposing electrode 230 .

[0143] In the first to third organic light emitting diodes OLED1, OLED2, OLED3, the pixel electrode 210 and the light emitting layer 222 may be patterned and arranged for each pixel P, and the first common layer 221, the second common layer 223, and the counter electrode 230 may be integrally arranged in the display area DA.

[0144] A pixel defining layer 215 may be formed on the pixel electrode 210 .

[0145] The pixel defining layer 215 may include an opening exposing a top surface of the pixel electrode 210 and may cover an edge of the pixel electrode 210 .

[0146] The intermediate layer 220 may include a light emitting layer 222 .

[0147] The light emitting layer 222 may include a polymer or a low-molecular organic material that emits color light.

[0148] In embodiments, the intermediate layer 220 may include a first common layer 221 between the light emitting layer 222 and the pixel electrode 210 and / or a second common layer 223 between the light emitting layer 222 and the counter electrode 230 .

[0149] The capping layer 240 may be positioned on the counter electrode 230 .

[0150] For example, the capping layer 240 may include an organic material, an inorganic material, or a mixture thereof, and may be provided as a single layer or a plurality of layers.

[0151] Since the first to third organic light emitting diodes OLED1 , OLED2 , OLED3 may be easily damaged by moisture or oxygen from the outside, the first to third organic light emitting diodes OLED1 , OLED2 , OLED3 may be protected by covering with a thin film encapsulation layer 300 .

[0152] The thin film encapsulation layer 300 may cover the display area DA and may extend to a non-display area outside the display area DA.

[0153] The thin film encapsulation layer 300 may include at least one organic encapsulation layer and at least one inorganic encapsulation layer.

[0154] For example, the thin film encapsulation layer 300 may include a first inorganic encapsulation layer 310 , an organic encapsulation layer 320 , and a second inorganic encapsulation layer 330 .

[0155] Since the first inorganic encapsulating layer 310 is formed along the underlying structure, an upper surface of the first inorganic encapsulating layer 310 may be uneven.

[0156] The organic encapsulating layer 320 may cover the first inorganic encapsulating layer 310 , and an upper surface of the first inorganic encapsulating layer 310 may be substantially flat.

[0157] The second inorganic encapsulating layer 330 may cover the organic encapsulating layer 320 and may include silicon nitride, silicon oxynitride, or silicon oxide.

[0158] Even if cracks occur in the thin film encapsulation layer 300 through the above multi-layer structure, the thin film encapsulation layer 300 can prevent such cracks from connecting between the first inorganic encapsulation layer 310 and the organic encapsulation layer 320 or between the organic encapsulation layer 320 and the second inorganic encapsulation layer 330 .

[0159] Thereby, the formation of a path through which moisture or oxygen from the outside penetrates into the display area DA may be prevented or minimized.

[0160] The wavelength control layer 400 may be disposed on the thin film encapsulation layer 300 .

[0161] The wavelength control layer 400 may include color conversion layers QD1 and QD2 , a transmission layer TL, and barrier ribs 410 .

[0162] The color conversion layers QD1 and QD2 may each include quantum dots.

[0163] Quantum dots can have unique excitation and emission properties depending on their material and size, and can thus convert incident light into light of another color.

[0164] Various materials can be used as quantum dots.

[0165] A transmission layer TL, instead of the color conversion layer, may be disposed in the emission area EA of the third pixel Pb.

[0166] The transmission layer TL may be made of an organic material that emits light without converting the wavelength of light emitted from the third organic light emitting diode OLED3 of the third pixel Pb.

[0167] In an embodiment, the first and second organic light emitting diodes OLED1 and OLED2 may emit light of the same wavelength, and the colors of the first and second pixels Pr and Pg may be determined according to the wavelengths changed by the quantum dots of the first and second color conversion layers QD1 and QD2.

[0168] Since the color conversion layer is not disposed in the emission area EA of the third pixel Pb, the third pixel Pb may be determined by the color of light emitted by the third organic light emitting diode OLED3.

[0169] For example, the first pixel Pr may emit red light, the second pixel Pg may emit green light, and the third pixel Pb may emit blue light.

[0170] Barrier ribs 410 may be disposed between the first color conversion layer QD1 , the second color conversion layer QD2 , and the transmission layer TL in the non-emission area NEA.

[0171] For example, the barrier ribs 410 may be disposed between the first color conversion layer QD1 and the second color conversion layer QD2 , between the second color conversion layer QD2 and the transmission layer TL, or the like.

[0172] In an embodiment, the barrier ribs 410 may include an organic material, and in an embodiment, Cr, CrO x 、Cr / CrO x、Cr / CrO x / CrN y , resin (carbon pigment, RGB mixed pigment), graphite and non-Cr materials for controlling optical density.

[0173] In another embodiment, the barrier ribs 410 may include a pigment having a color such as red, green, or yellow, and the barrier ribs 410 may function as a black matrix to prevent color mixing and improve visibility.

[0174] After barrier ribs 410 are first formed on thin film encapsulation layer 300 , first color conversion layer QD1 , second color conversion layer QD2 , and transmittive layer TL may be formed in regions between barrier ribs 410 .

[0175] The barrier layer 420 may be disposed on the first color conversion layer QD1 , the second color conversion layer QD2 , and the transmission layer TL for planarization and preventing penetration of impurities.

[0176] The barrier layer 420 may be formed of silicon nitride, silicon oxynitride, or silicon oxide, and may have a single-layer or multi-layer structure.

[0177] The optical function layer 500 may be disposed on the wavelength control layer 400 .

[0178] The optical function layer 500 may include a reflective metal layer 510 and a light absorption layer 520 positioned on the reflective metal layer 510 .

[0179] The reflective metal layer 510 may include a reflective metal.

[0180] For example, the reflective metal layer 510 may include a reflective film including silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or a compound or mixture thereof.

[0181] In an embodiment, the reflective metal layer 510 may include a metal having high reflectivity, and the reflective metal layer 510 may have a reflectivity greater than or equal to about 85%. For example, the reflective metal layer 510 may have a reflectivity greater than or equal to about 90%.

[0182] The reflectance may be a value measured based on standard illuminant D65.

[0183] The reflective metal layer 510 may include, for example, super aluminum (s-Al).

[0184] Super aluminum (s-Al) is a high-purity aluminum alloy, and its reflectivity may be greater than or equal to about 89%.

[0185] As such, the reflective metal layer 510 may include a reflective film metal having high reflectivity, thereby increasing the light emitting efficiency of the display device 1 through recycling of light due to internal reflection.

[0186] The light absorbing layer 520 may be disposed over the reflective metal layer 510 .

[0187] The light absorbing layer 520 may include a metal having an absorption coefficient.

[0188] For example, the light absorbing layer 520 may include molybdenum tantalum oxide (MoTaO x , MTO), molybdenum (Mo), tantalum (Ta), manganese (Mn) and magnesium (Mg).

[0189] The light absorbing layer 520 may prevent color mixing between pixels P and improve visibility by absorbing and blocking external light.

[0190] The optical function layer 500 may also be provided in the non-emission area NEA between the emission areas EA.

[0191] As described above, since the optical function layer 500 includes the light absorption layer 520 , the optical function layer 500 may function as a black matrix in the non-emission area NEA through the light absorption layer 520 .

[0192] Thus, the display device 1 according to the disclosed embodiment may not require a separate black matrix, which simplifies the manufacturing process and reduces costs.

[0193] In an embodiment, the optical functional layer 500 may have a plurality of openings OP in the emission area EA.

[0194] The opening OP may penetrate the optical function layer 500 .

[0195] For example, a plurality of openings OP may be formed to penetrate the reflective metal layer 510 and the light absorbing layer 520 .

[0196] In an embodiment, the plurality of openings OP may have different aperture ratios for each pixel P.

[0197] The “aperture ratio” may be a concept distinguished from an absolute light emitting area or an opening area, and may be a ratio of an area of ​​a plurality of openings OP to an area of ​​the light emitting area EA defined by the openings of the pixel defining layer 215 when the light emitting area EA is 100.

[0198] The aperture ratio of the opening OP and the light-emitting area EA may be, for example, greater than or equal to about 40%. For example, the aperture ratio of the opening OP and the light-emitting area EA may be greater than or equal to about 45%. For example, the aperture ratio of the opening OP and the light-emitting area EA may be greater than or equal to about 50%.

[0199] This can be modified according to the conditions required for each pixel P.

[0200] Light emitted from the first to third organic light emitting diodes OLED1 , OLED2 , and OLED3 may pass through the plurality of openings OP and be emitted to the outside.

[0201] For example, a larger aperture ratio of the opening OP is more advantageous in terms of light efficiency, but may be susceptible to external light reflection.

[0202] On the contrary, the smaller the aperture ratio of the opening OP is, the more advantageous it is for preventing external light reflection, but the amount of blocked light increases, which may reduce light efficiency.

[0203] Therefore, in the display device 1 according to the disclosed embodiment, the aperture ratio can be optimized by adjusting the size of the opening OP of the optical functional layer 500 and arranging the reflective metal layer 510 on one side of the optical functional layer 500, so that some light that does not pass through the opening OP can be reflected and reproduced by the reflective metal layer 510, thereby increasing the light efficiency.

[0204] The filter layer 600 may be disposed on the optical function layer 500 .

[0205] The filter layer 600 may be provided to correspond only to the first pixel Pr and the second pixel Pg.

[0206] In the following, reference will be made to Figure 4 A light absorbing layer barrier rib structure according to disclosed embodiments is described in detail.

[0207] The light absorbing layer barrier rib structure according to the disclosed embodiment may be applied to the barrier rib 410 or the optical function layer 500 which may be used as a black matrix.

[0208] Figure 4 is a schematic cross-sectional view of a light absorbing layer barrier rib structure according to a disclosed embodiment.

[0209] like Figure 4 As shown in FIG, according to the disclosed embodiment, the light absorbing layer 520 barrier rib structure may have a molybdenum (Mo) metal film 521 in the center and molybdenum tantalum oxide (MoTaO x , MTO) film 523 has a three-layer sandwich structure of MTO / Mo / MTO.

[0210] Here, molybdenum tantalum oxide (MoTaO x , MTO) may be a light absorbing material including tantalum (Ta) in an amount up to 6%.

[0211] With the light absorbing layer barrier rib structure according to the disclosed embodiment, the light absorbing layer barrier rib structure is formed by the molybdenum (Mo) metal film 521 at the center and the molybdenum tantalum oxide (MoTaO x The interference effect of the MTO / Mo / MTO three-layer structure composed of the Mo (Mo) / MTO (Mo-Mo) film 523 can prevent color mixing between pixels P, and can improve visibility by absorbing light inside and outside the rib structure by absorbing the light absorption layer.

[0212] When forming an MTO / Mo / MTO three-layer structure having a light absorption layer barrier rib structure according to the disclosed embodiment, in order to form an MTO / Mo / MTO three-layer structure having a certain thickness on the sidewall, anisotropic drying of the upper and lower portions may be required, and a certain thickness may need to be removed through an etching process.

[0213] In the light absorbing layer barrier rib structure according to the disclosed embodiment, in order to make the sidewall of the light absorbing layer 520 having a thickness of about 72 nm have an MTO / Mo / MTO three-layer structure, it may be necessary to form an MTO / Mo / MTO three-layer structure that is thick and uneven, such as 3000 μm, 1000 μm or 278 μm, for the upper and lower portions of the light absorbing layer 520 that need to be removed, and therefore may need to be removed using an anisotropic dry etching process.

[0214] If the light absorbing layer 520 is composed of an MTO / Mo / MTO three-layer structure, the blackening characteristics can be very excellent, but anisotropic drying may be required for a thick and unevenly formed MTO / Mo / MTO three-layer structure on the top or bottom of the light absorbing layer 520, and because tetramethylammonium hydroxide (TMAH, developer) or molybdenum tantalum oxide (MTO) used in the anisotropic dry etching process may be easily dissolved by water washing, side erosion of the sidewalls of the light absorbing layer 520 may be aggravated on the sidewalls, causing the problem of property degradation.

[0215] Reference Figure 5 and Figure 6 , a light absorbing layer barrier rib structure for solving this problem according to an embodiment of another aspect of the disclosure will be described.

[0216] The light absorbing layer barrier rib structure according to the disclosed embodiment aims to solve this problem, and the MTO / Mo / MTO three-layer light absorbing layer barrier rib structure according to the disclosed embodiment can protect the side surfaces by preventing side surface damage and provide a robust light absorbing layer barrier rib structure that is not affected by water or tetramethylammonium hydroxide (TMAH, a developer) used in an anisotropic dry etching process.

[0217] Figure 5 FIG is a schematic cross-sectional view of a light absorbing layer barrier rib structure according to another embodiment of the disclosure. Figure 5 As shown in the figure, the light absorbing layer barrier rib structure 5200 according to the disclosed embodiment may include a multilayer barrier rib structure (or referred to as a "multilayer barrier rib member", "multilayer film barrier rib structure") in which transparent inorganic layers 5201 and transparent organic layers 5203 are alternately deposited, a blackening member 5205 on the side of the multilayer barrier rib structure, and a blackening protection member (or referred to as a "blackening protection layer") 5207 for protecting the blackening member 5205.

[0218] The transparent inorganic layer 5201 may include an inorganic material such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, tantalum oxide, and hafnium oxide. The transparent inorganic layer 5201 may be deposited to a thickness in a range of about 0.1K to about 1K.

[0219] The transparent organic layer 5203 may include a general polymer such as polymethyl methacrylate (PMMA) or polystyrene (PS), a polymer derivative having a phenolic group, an acrylic polymer, an imide polymer, an aromatic ether polymer, an amide polymer, a fluorine polymer, a paraxylene polymer, a vinyl alcohol polymer, or a blend thereof. The transparent organic layer 5203 may be deposited to a thickness ranging from about 2K to about 4K.

[0220] In the light absorbing layer barrier rib structure 5200 according to the disclosed embodiment, the multilayer barrier rib structure in which the transparent inorganic layer 5201 and the transparent organic layer 5203 are alternately deposited can be substantially similar to the existing organic layer single barrier rib structure, and since the member is formed through a low-temperature process, stability can be ensured by solving the instability problem. The total height of the multilayer film barrier rib structure can be in the range of about 7K to about 9K.

[0221] (Example 1) In Example 1, a transparent inorganic layer 5201 may be stacked, and on top of the transparent inorganic layer 5201, a transparent organic layer 5203 may be stacked to form a multilayer structure. The transparent inorganic layer 5201 may include silicon nitride (SiN x ) compound, and the transparent organic layer 5203 may include an imide-based polymer (PI: polyimide), and SiN x / PI / SiN x / PI / SiN x The multilayer structure can be deposited in increments of 0.5K, 3.0K, 0.5K, 3.0K, and 0.5K, for a total of 7.5K.

[0222] In the light absorbing layer barrier rib structure 5200 according to the disclosed embodiment, the blackened member 5205 formed on the side of the multi-layer barrier rib structure can be a three-layer structure formed by forming a reflective metal layer 5205a and sandwiching a blackened layer 5205b deposited by chemical vapor deposition (CVD) on the side of the reflective metal layer 5205a. The reflective metal layer 5205a can have a thickness in the range of about 100 Å to about 300 Å, and the blackened layer 5205b deposited by CVD can have a thickness in the range of about 500 Å to about 1,500 Å.

[0223] Similar to the reflective metal layer 510 as a reflective film, the reflective metal layer 5205a may include silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or a compound or mixture thereof because it can have good reflectivity.

[0224] The CVD-deposited blackening layer 5205b may include amorphous silicon deposited by CVD.

[0225] (Example 2) In Example 2, reflective metal layer 5205a can be CVD-deposited using aluminum (Al), which facilitates low-temperature film formation. The CVD-deposited blackening layer 5205b can be CVD-deposited using amorphous silicon to form a triple layer of a-Si / Al / a-Si. Blackening member 5205 can be CVD-deposited in the order of a-Si / Al / a-Si to thicknesses of 200 Å, 1000 Å, and 200 Å, respectively, to address the side step coverage issue.

[0226] By chemically depositing aluminum (Al) and amorphous silicon (a-Si) on the side of the multi-layer barrier rib structure, a three-layer blackening member 5205 can be formed, thereby improving the step coverage of the thickness ratio of the deposited layers formed on the upper and lower parts in the depth direction of the microstructure, and using the a-Si / Al / a-Si blackening film, a low-reflection thin film structure can be formed.

[0227] In the light absorbing layer barrier rib structure 5200 according to the disclosed embodiment, a blackened protective layer 5207 may be formed on the outside of a blackened member 5205 formed on the side of the multi-layer film barrier rib structure by chemical vapor deposition.

[0228] The blackened protective layer 5207 may include an inorganic material such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, tantalum oxide, and hafnium oxide.

[0229] (Example 3) In Example 3, the blackened protective layer 5207 may be formed of SiO 2 to a thickness of 500 Å. The blackened protective layer 5207 may include SiO 2 and may be deposited by CVD to a thickness in a range of about 300 Å to about 600 Å.

[0230] According to the light absorption layer barrier rib structure 5200 according to the disclosed embodiment, the MTO / Mo / MTO three-layer structure can be formed not by using the sputtering deposition method, but by chemical vapor deposition to form the blackening member 5205 formed on the side of the multi-layer barrier rib member, and a low-reflection thin film structure with excellent step coverage can be formed.

[0231] According to the disclosed embodiments, the blackened protection layer 5207 can prevent the side surfaces of the light absorbing layer barrier rib structure 5200 from being damaged by a developer or a cleaning solution by removing the upper and lower portions of the light absorbing layer barrier rib structure 5200 .

[0232] Furthermore, according to the disclosed embodiment, the MTO / Mo / MTO triple-layer light absorbing layer can be formed on the organic film barrier rib structure through the absorbing layer barrier rib structure 5200. The organic film barrier rib structure may have the problem of instability caused by being formed through a low temperature process, but the stability of the barrier rib structure can be improved by the transparent inorganic layer (SiO2 or SiN x ) / transparent organic layer cross-stacked structure to ensure.

[0233] Figure 6 It shows Figure 5 Schematic cross-sectional view of the light path of the light absorbing layer blocking rib structure. Figure 6 As shown in , the light absorbing layer barrier rib structure 5200 according to the disclosed embodiment can transmit light substantially vertically to pass through the multilayer film barrier rib structure in which transparent inorganic layers 5201 and transparent organic layers 5203 are alternately stacked, and can absorb obliquely incident internal light and external light by the CVD-deposited amorphous silicon (a-Si) of the blackening member 5205 formed on the side of the multilayer film barrier rib structure, and the CVD-deposited amorphous silicon (a-Si) of the blackening member 5205 is formed by the CVD-deposited blackening layer 5205b.

[0234] Reference Figure 7 and Figure 8 , a method of manufacturing the light absorbing layer barrier rib structure 5200 according to the disclosed embodiment will be described.

[0235] Figure 7 is a flow chart illustrating a method for manufacturing a light absorbing layer barrier rib structure according to a disclosed embodiment, Figure 8 is a schematic diagram illustrating a method of manufacturing a light absorbing layer barrier rib structure according to a disclosed embodiment.

[0236] like Figure 7 As shown in , the manufacturing method of the light absorbing layer barrier rib structure 5200 according to the disclosed embodiment may include: step S10 of constructing a multilayer barrier rib structure in which transparent inorganic layers and transparent organic layers are alternately stacked on the upper part of a substrate; step S20 of patterning the multilayer barrier rib structure by dry etching; step S30 of depositing a blackening film on the patterned multilayer barrier rib structure by chemical vapor deposition to form a blackening member; step S40 of forming a light absorbing layer sidewall protective film on the upper part of the blackening member; step S50 of removing the blackening members formed on the top and bottom of the light absorbing layer barrier rib structure; and step S60 of completing the final light absorbing layer barrier rib structure.

[0237] like Figure 8 As shown in FIG, the method for manufacturing an absorption layer barrier rib structure 5200 according to the disclosed embodiment may include step S10 of forming a multilayer barrier rib structure having transparent inorganic layers and transparent organic layers alternately stacked on a substrate. In this step, a transparent inorganic layer 5201 may be stacked on the substrate, and a transparent organic layer 5203 may be stacked on top of the transparent inorganic layer 5201. The transparent inorganic layer 5201 may include silicon nitride (SiN x ) compound, and the transparent organic layer 5203 may include an imide polymer (PI: polyimide), and SiN may be deposited in increments of 0.5K, 3.0K, 0.5K, 3.0K, and 0.5K, respectively, using a CVD method or a PECVD method. x / PI / SiN x / PI / SiN x Multilayer structure with a total thickness of up to 7.5K.

[0238] The step S20 of patterning the multilayer film barrier rib structure by dry etching may include applying a photoresist PR on the upper portion of the multilayer film barrier rib structure alternately stacked with transparent inorganic layers 5201 and transparent organic layers 5203 and using an aligned mask M to expose the photoresist PR to UV light and develop it, leaving only the photoresist PR corresponding to the light absorbing layer barrier rib structure 5200.

[0239] The photoresist PR may be a photosensitive organic material such as acrylic resin, benzocyclobutene (BCB), polyimide (PI), and novolac resin.

[0240] Here, the photosensitive organic material may be a negative photosensitive material or a positive photosensitive material.

[0241] The mask M may include a light blocking portion M1 and a light transmitting portion M2 .

[0242] The light blocking portion M1 may correspond to a region where the photoresist PR remains, and the light transmitting portion M2 may correspond to a region from which the photoresist PR is removed.

[0243] The light-blocking portion M1 may be located at a position corresponding to the light-blocking region of the substrate 100 , and the light-transmitting portion M2 may be located at a position corresponding to the pixel region of the substrate 100 .

[0244] The light absorbing layer 520 or the barrier ribs 410 may be formed by etching the multi-layer barrier rib structure in the region from which the photoresist PR has been removed.

[0245] The etching may be dry etching.

[0246] In step S30 of forming a blackening member by depositing a blackening film on the patterned multi-layer barrier rib structure using a chemical vapor deposition method, aluminum (Al) which is conducive to low-temperature film formation can be used to CVD deposit the reflective metal layer 5205a, and amorphous silicon can be used to CVD deposit the blackening layer 5205b, and the a-Si / Al / a-Si three-layer film blackening member 5205 can be CVD deposited to thicknesses of 200Å, 1000Å and 200Å in the order of a-Si / Al / a-Si, respectively.

[0247] A three-layer blackening member 5205 can be formed on the side of the multi-layer barrier rib member by chemical vapor deposition of aluminum (Al) and amorphous silicon (a-Si), so that the steps can define the thickness ratio of the deposited layers formed at the top and bottom in the depth direction of the microstructure, while improving the coverage (step coverage), and a low-reflection thin film structure can be formed using the a-Si / Al / a-Si blackening film.

[0248] In the step S40 of forming a light absorbing layer sidewall protection film on the blackened member, the blackened protection layer 5207 can be formed of 500Å SiO2 by chemical vapor deposition.

[0249] Subsequently, in step S50 of removing the blackening members formed on the upper and lower portions of the light absorbing layer blocking rib structure, the amorphous silicon forming the CVD-deposited blackening layer 5205b deposited on the upper and lower portions of the light absorbing layer blocking rib structure 5200 can be removed by UV exposure or MAH developing solution or clean water, and the aluminum reflective metal layer 5205a can be etched by anisotropic dry etching.

[0250] Although not shown, after forming a pattern using the photoresist and performing etching using the photoresist pattern to form a pattern, the photoresist may be removed.

[0251] The blackened protective layer 5207 may prevent the side surfaces of the light absorbing layer barrier rib structure 5200 from being damaged by a developer or a cleaning solution.

[0252] The first color conversion layer QD1 , the second color conversion layer QD2 , and the transmission layer TL may be formed between the light absorbing layer barrier rib structures 5200 .

[0253] Each of the first color conversion layer QD1 , the second color conversion layer QD2 , and the transmission layer TL may be disposed in an opening formed in the light absorbing layer barrier rib structure 5200 .

[0254] Again, as above in Figure 3 As described in , the first color conversion layer QD1 may be formed to correspond to the first pixel Pr, the second color conversion layer QD2 may be formed to correspond to the second pixel Pg, and the transmission layer TL may be formed to correspond to the third pixel Pb.

[0255] The first color conversion layer QD1, the second color conversion layer QD2, and the transmission layer TL may be formed by, for example, inkjet printing.

[0256] The blocking layer 420 may be disposed on the first color conversion layer QD1 , the second color conversion layer QD2 , and the transmission layer TL.

[0257] Now, we will use Figures 9 to 16 Effects of the light absorbing layer barrier rib structure 5200 according to the disclosed embodiment are described in detail.

[0258] Figure 9 This is a schematic diagram for maximizing the low reflection effect. Figure 10 is a graph showing the relationship between the extinction coefficient and transmittance of a medium, Figure 11 is a graph showing reflectivity according to the thickness of a blackened layer formed on a reflective metal layer, Figure 12 is a graph showing the characteristics of the blackened film due to interference and absorption caused by reflection from the metal layer, Figure 13 is a graph showing transmittance according to the thickness of the a-Si film based on glass, Figure 14 is a graph showing reflectivity according to the thickness of an amorphous silicon film when the amorphous silicon film is formed on an aluminum (Al) reflective metal layer, Figure 15 is a graph showing the reflectivity of the a-Si / Al / a-Si blackened film structure according to the a-Si thickness, and Figure 16 Graph showing reflectivity of an a-Si / Ti / a-Si blackened film structure according to a-Si thickness.

[0259] Reference Figure 9, the behavior of incident light between the first medium and the third medium having absorptivity is shown in Equation 1. In Equation 1, θ1 may be the incident angle of light absorbed by the absorbing layer, θ3 may be the transmission angle of light having passed through the absorbing layer, n may be the refractive index of the medium, d may be the film thickness of the medium, k may be the absorption coefficient of the medium, T may be the total transmittance, t 12 It can be the transmittance between the first medium and the second medium, t 23 It can be the transmittance between the second medium and the third medium. When the third medium has a reflective metal layer, the optical path is increased by 2 times to 2nd / cosθ, and the interference phenomenon occurs simultaneously with the light absorption, which allows the total transmittance to be obtained with a thinner film, enabling the construction of a thinner blackened film.

[0260] [Equation 1]

[0261] Reference Figure 10 , in the case where the intrinsic absorption coefficient of the medium is 0, no light absorption occurs and all light is reflected, but in the case where the intrinsic extinction coefficient of the medium is not 0, light absorption occurs and interference occurs at the same time.

[0262] In the case where the intrinsic extinction coefficient of the medium is not 0, the product n×d of the refractive index n and the thickness d of the medium, for example, as the optical thickness increases, the transmittance decreases, and in the case where the medium has an extinction coefficient of 0.6, the transmittance decreases even if the optical thickness is not increased, and it can be seen that the transmittance is constant, for example, less than 20%.

[0263] Figure 11 is a graph showing the reflectivity according to the thickness of the blackened layer formed on the reflective metal layer, in which SiN is formed with different thicknesses for a Ti / Al composite reflective metal layer having an absorption coefficient k=0.65. x In the case of the black layer, and in the study of SiN x In the case of the reflectivity of the blackened layer thickness, it is found that the Ti / Al composite reflective metal layer can be made of SiN in the range of about 500Å to 600Å. x The blackened layer is blackened and has a reflectivity greater than or equal to about 65%.

[0264] Reference Figure 12 , based on 100% reflectivity of the aluminum (Al) reflective metal layer, where no blackened film is formed on the SiN x / Ti multilayer film, SiN formed in the middle of the 600Å blackened film xIn the case of the BM600Å / Ti multilayer film and the BM400Å / Al / glass multilayer film in which the blackened film is formed to 400Å, the low reflection effect is maximized when the blackened film is formed on the reflective metal layer.

[0265] Specifically, in the case of the BM400Å / Al / glass multilayer film having a 400Å blackened film, it can be seen that the ghost reflectivity is close to 0 for wavelengths in the range of 500nm to 600nm, based on 100% reflectivity of the aluminum (Al) reflective metal layer.

[0266] For example, it can be seen that when a thin blackened film is formed on top of the reflective film of the reflective metal layer, the low reflection effect is maximized due to the interference effect between the reflective film of the reflective metal layer and the blackened film, thereby ensuring excellent blackened film characteristics.

[0267] However, as in Figure 12 As can be seen in FIG. 5 , the thickness of the light absorbing layer barrier rib structure 5200 may need to be optimized according to different structures according to the utilization in the display panel.

[0268] For example, the thickness of a blackening film used as the optical functional layer 500 , the wavelength control layer 400 , or the black matrix may need to be optimized.

[0269] Reference Figure 13 , the transmittance as a function of wavelength is plotted for 100Å, 1500Å, and 2000Å of an amorphous silicon a-Si film on a glass reference glass substrate with the transmittance of glass being 100%.

[0270] For wavelengths of 480nm to 580nm, it can be seen that in the case of forming an amorphous silicon a-Si film with a thickness of 1500Å or 2000Å, the transmittance is almost 10% or less, but for the entire visible light wavelength, in the case of forming an amorphous silicon a-Si film with a thickness of 2000Å, the transmittance is less than 10%, and it can be seen that it is desirable because it shows a transmittance of 20% or less.

[0271] It can be seen that in the case of a single amorphous silicon a-Si film, the light absorption effect is greater when the thickness is greater.

[0272] Reference Figure 14 , based on the reflectivity of the reflective film being a silver (Ag) reflective metal layer or an aluminum (Al) reflective metal layer, it can be seen that when 150Å, 200Å, and 250Å amorphous silicon a-Si films are formed on the aluminum (Al) reflective metal layer, the formation of the 200Å amorphous silicon a-Si film shows a reflectivity of 4.7% at a wavelength of 550nm.

[0273] In other words, it can be seen that in the case where the a-Si blackened film made of amorphous silicon is formed on the aluminum (Al) reflective metal layer, a low reflection effect in a thin structure is possible.

[0274] Reference Figure 15 , based on the reflectivity of the silver (Ag) reflective metal layer or the aluminum (Al) reflective metal layer, when 150Å, 200Å and 250Å amorphous silicon a-Si films are formed on the top and bottom of the aluminum (Al) reflective metal layer, in terms of reflectivity by wavelength, for example, in the a-Si / Al / a-Si three-layer blackened film structure, it can be seen that the reflectivity can be less than 5% at 550nm, which is the most sensitive to the eye.

[0275] This is because a low reflection effect is also observed in the amorphous silicon a-Si film below the aluminum (Al) reflective metal layer, so the a-Si / Al / a-Si three-layer blackened film structure is symmetrical and shows the same reflection effect on both sides.

[0276] Reference Figure 16 Based on the reflectivity of a silver (Ag) reflective metal layer or an aluminum (Al) reflective metal layer, an amorphous silicon (a-Si) film is formed on the top and bottom of a titanium (Ti) reflective metal layer to a thickness of 60 Å, 80 Å, and 100 Å. Although the reflectivity can be reduced by forming the a-Si film thinner, it can be seen that for the reflectivity of each wavelength band, for example, in the a-Si / Ti / a-Si three-layer blackened film structure, a reflectivity of 10% or less can be achieved at 550 nm, which is the most sensitive wavelength to the eye.

[0277] The above description is an example of the disclosed technical features, and those skilled in the art will be able to make various modifications and changes. Therefore, the above disclosed embodiments can be implemented individually or in combination with each other.

[0278] Therefore, the embodiments disclosed in the disclosure are not intended to limit the disclosed technical spirit, but to describe the disclosed technical spirit, and the scope of the disclosed technical spirit is not limited by these embodiments. The scope of protection disclosed should be interpreted by the claims, and should be interpreted as including all technical spirits within the equivalent scope within the scope of the disclosure.

Claims

1. A display device, comprising: A first light emitting device, a second light emitting device and a third light emitting device are disposed on a substrate; a first color conversion layer and a second color conversion layer, wherein the first color conversion layer is disposed on the first light-emitting device and the second color conversion layer is disposed on the second light-emitting device; a transmission layer, disposed on the third light-emitting device; as well as A multi-layer film barrier rib structure is provided on the first color conversion layer, the second color conversion layer and the transmission layer, wherein: The multi-layer film barrier rib structure includes transparent inorganic layers and transparent organic layers deposited alternately, A light absorbing layer barrier rib structure is provided on a side surface of the multi-layer film barrier rib structure, the light absorbing layer barrier rib structure including a blackening member and a blackening protection member on the blackening member, and The light absorbing layer barrier rib structure has a plurality of openings in a first light emitting region of the first light emitting device, a second light emitting region of the second light emitting device, and a third light emitting region of the third light emitting device.

2. The display device according to claim 1, wherein The transparent inorganic layer includes a silicon nitride compound, and The transparent organic layer includes an imide-based polymer.

3. The display device according to claim 2, wherein: The transparent inorganic layer is deposited to a thickness in the range of 0.1K to 1K, The transparent organic layer is deposited to a thickness in the range of 2K to 4K, and The total height of the multi-layer film barrier rib structure is in the range of 7K to 9K.

4. The display device according to claim 1, wherein The blackening member includes a reflective metal layer and a CVD-deposited blackening layer disposed on a side surface of the reflective metal layer.

5. The display device according to claim 4, wherein The reflective metal layer includes aluminum for low temperature film formation, and The blackened layer deposited by CVD includes amorphous silicon. The display device according to claim 5 , wherein: The reflective metal layer has a thickness in the range of 100 Å to 300 Å, and The CVD-deposited blackened layer has a thickness in the range of 500 Å to 1,500 Å.

7. The display device according to claim 1, wherein The blackened protective member includes SiO 2 and is deposited by CVD to a thickness in a range of 300 Å to 600 Å.

8. A light absorbing layer barrier rib structure, comprising: a multi-layer barrier rib structure comprising alternately deposited transparent inorganic layers and transparent organic layers; a blackening member, CVD-deposited on side surfaces of the multi-layer barrier rib structure; as well as A blackened protective member is on the blackened member.

9. The light absorbing layer barrier rib structure according to claim 8, wherein: The transparent inorganic layer includes a silicon nitride compound, and The transparent organic layer includes an imide-based polymer.

10. The light absorbing layer barrier rib structure according to claim 9, wherein: The transparent inorganic layer is deposited to a thickness in the range of 0.1K to 1K, The transparent organic layer is deposited to a thickness in the range of 2K to 4K, and The total height of the multi-layer barrier rib structure is in the range of 7K to 9K.

11. The light absorbing layer barrier rib structure according to claim 8, wherein: The blackening member includes a reflective metal layer and a CVD-deposited blackening layer disposed on a side surface of the reflective metal layer.

12. The light absorbing layer barrier rib structure according to claim 11, wherein: The reflective metal layer includes aluminum for low temperature film formation, and The blackened layer deposited by CVD includes amorphous silicon.

13. The light absorbing layer barrier rib structure according to claim 12, wherein: The reflective metal layer has a thickness in the range of 100 Å to 300 Å, and The CVD deposited blackened layer has a thickness in the range of 500Å to 1500Å.

14. The light absorbing layer barrier rib structure according to claim 8, wherein: The blackened protective member includes SiO 2 and is deposited by CVD to a thickness in a range of 300 Å to 600 Å.

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