Display device, display module, electronic apparatus, and method for manufacturing display device

Abstract

Provided are a novel display device, a display module, an electronic apparatus, and a method for manufacturing a display device that are convenient, practical, or reliable. The display device includes: a first light emitting device including a first electrode, a second electrode, a first cell including a first light emitting material and having a first side, and a first layer including a carrier injection material; and a second light emitting device including a third electrode adjacent to the first electrode, a fourth electrode, a second cell having a second side, and a second layer including a carrier injection material. The method includes a step of reducing the outer shape of the first cell, so that the concentration of the carrier injection material in the first layer is higher than that of the first side surface. The method includes a step of reducing the outer shape of the second cell, so that the concentration of the carrier injection material in the second layer is higher than that of the second side surface.

Description

Technical Field

[0001] One embodiment of the present invention relates to a display device, a display module, an electronic device, or a semiconductor device.

[0002] Note that one embodiment of the present invention is not limited to the above-mentioned technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, method, or manufacturing method. One embodiment of the present invention relates to a process, machine, product, or composition of matter. Therefore, more specifically, as an example of the technical field of one embodiment of the present invention disclosed in this specification, a data processing device, a semiconductor device, a storage device, a driving method of these devices, or a manufacturing method of these devices can be cited. Background Art

[0003] In recent years, high-definition display panels have become increasingly popular. Examples of devices requiring high-definition display panels include smartphones, tablet computers, and laptop computers. Furthermore, fixed display devices such as televisions and monitors are also being required to achieve higher resolutions as resolution increases. Devices that require the highest resolution include those used in virtual reality (VR) and augmented reality (AR).

[0004] Typical display devices applicable to display panels include liquid crystal display devices, light-emitting devices including light-emitting elements such as organic EL (Electro Luminescence) elements and light-emitting diodes (LEDs), and electronic paper that displays using electrophoresis or the like.

[0005] For example, the basic structure of an organic EL element is a layer containing a light-emitting organic compound sandwiched between a pair of electrodes. By applying a voltage to the element, light from the light-emitting organic compound can be obtained. Because display devices using these organic EL elements do not require the backlight required by liquid crystal displays, they can achieve thin, lightweight, high-contrast, and low-power display devices. For example, Patent Document 1 discloses an example of a display device using an organic EL element.

[0006] Patent Document 2 discloses a display device for VR application using an organic EL element.

[0007] [Patent Document 1] Japanese Patent Application Publication No. 2002-324673 [Patent Document 2] International Patent Application Publication No. 2018 / 087625 Summary of the Invention

[0008] One object of one embodiment of the present invention is to provide a novel display device that is convenient, practical, or reliable. Another object of one embodiment of the present invention is to provide a novel display module that is convenient, practical, or reliable. Another object of one embodiment of the present invention is to provide a novel electronic device that is convenient, practical, or reliable. Another object of one embodiment of the present invention is to provide a novel display device, a novel display module, a novel electronic device, or a novel semiconductor device.

[0009] Note that the inclusion of these objectives does not preclude the existence of other objectives. Note that one embodiment of the present invention does not necessarily achieve all of the aforementioned objectives. Furthermore, if objectives other than the aforementioned objectives are clearly present in the specification, drawings, and claims, such objectives may be derived from the description of the specification, drawings, and claims.

[0010] (1) One embodiment of the present invention is a method for manufacturing a display device including first to sixth stages.

[0011] In the first stage, a first electrode, a second electrode, and a first gap are formed on the insulating layer, wherein the first gap is sandwiched between the first electrode and the second electrode.

[0012] In the first step of the second stage, a first film is formed on the first electrode and the second electrode.

[0013] In the second step of the second stage, a second film is formed on the first film.

[0014] In the third step of the second stage, a third film is formed on the second film.

[0015] In the fourth step of the second stage, a fourth film is formed on the third film.

[0016] In the fifth step of the second stage, the fourth film on the second electrode is removed by photolithography to form a first layer overlapping the first electrode.

[0017] In the sixth step of the second stage, the third film and the second film on the second electrode are removed by etching the first layer to form the second layer, the first cell, and the third layer. The second layer is sandwiched between the first layer and the first electrode, and the first cell is sandwiched between the second layer and the first electrode.

[0018] In the first step of the third stage, a fifth film is formed on the first layer and the second electrode.

[0019] In the second step of the third stage, a sixth film is formed on the fifth film.

[0020] In the third step of the third stage, a seventh film is formed on the sixth film.

[0021] In the fourth step of the third stage, an eighth film is formed on the seventh film.

[0022] In the fifth step of the third stage, the eighth film on the first layer is removed by photolithography to form a fourth layer overlapping with the second electrode.

[0023] In the sixth step of the third phase, the seventh and sixth films on the first layer and in the first gap are removed using the etching method of the fourth layer to form the fifth layer, the second cell, the sixth layer, and the second gap. The fifth layer is sandwiched between the fourth layer and the second electrode, the second cell is sandwiched between the fifth layer and the second electrode, and the second gap overlaps the first gap.

[0024] In the first step of the fourth stage, a photoresist is formed after forming the ninth film.

[0025] In the second step of the fourth stage, the seventh and eighth layers are formed by etching using a photoresist. The seventh layer overlaps with the first electrode and has a smaller profile than the first layer. Furthermore, the eighth layer overlaps with the second electrode and has a smaller profile than the fourth layer.

[0026] In the third step of the fourth stage, the outer shapes of the first layer and the fourth layer are reduced by etching the seventh layer and the eighth layer.

[0027] In the fourth step of the fourth stage, the outer shapes of the second layer, the fifth layer, the first unit, the second unit, the third layer, and the sixth layer are reduced by etching the first layer and the fourth layer.

[0028] In the fifth step of the fourth stage, the first layer and the fourth layer are removed by etching.

[0029] In the first step of the fifth stage, a ninth layer is formed. The ninth layer contacts the insulating layer in the first gap and covers the first cell and the second cell.

[0030] In the second step of the fifth stage, a tenth layer is formed. The tenth layer fills the first gap and the second gap. In addition, the tenth layer includes a first opening portion overlapping the first electrode and a second opening portion overlapping the second electrode.

[0031] In the third step of the fifth stage, the ninth layer and the second layer overlapping with the first opening are removed by etching using the tenth layer, and the ninth layer and the fifth layer overlapping with the second opening are removed.

[0032] In the first step of the sixth stage, an eleventh layer is formed on the first unit and the second unit.

[0033] In the second step of the sixth stage, a conductive film is formed on the eleventh layer.

[0034] Thus, for example, the carrier injection material attached to the first side surface in the first step of the third stage can be removed in the fourth step of the fourth stage. Furthermore, the current flowing between the first electrode and the third electrode through the first side surface can be suppressed. Furthermore, the current flowing between the second electrode and the fourth electrode through the second side surface can be suppressed. Furthermore, the current that does not contribute to the light emission of the first light-emitting device or the current that does not contribute to the light emission of the second light-emitting device can be reduced. Furthermore, the current efficiency of the light emission of the display device can be improved. As a result, a novel method for manufacturing a display device that is convenient, practical, or reliable can be provided.

[0035] (2) Another embodiment of the present invention is the method for manufacturing the display device, wherein in the first step of the first stage, a tenth film is formed on the insulating layer.

[0036] In addition, in the second step of the first stage, a first electrode, a second electrode, and a first gap are formed on the tenth film. In addition, the first gap is sandwiched between the first electrode and the second electrode.

[0037] In the fifth step of the fourth stage, the first, fourth, and tenth layers are removed by etching to form the twelfth and thirteenth layers and the third gap. The twelfth layer is sandwiched between the first electrode and the insulating layer. The thirteenth layer is sandwiched between the second electrode and the insulating layer. The third gap overlaps the first gap.

[0038] Thus, in the fourth step of the fourth stage, etching using an oxygen-containing gas allows the outer shapes of the first and second cells to be adjusted. Furthermore, the use of the ninth film protects the insulating layer from the effects of etching using the oxygen-containing gas. Furthermore, even if the ninth film is conductive, the formation of the third gap prevents conduction between the first and second electrodes. Consequently, a novel method for manufacturing a display device with excellent convenience, practicality, and reliability can be provided.

[0039] (3) One embodiment of the present invention is a display device including a first light-emitting device, a second light-emitting device, and an insulating layer.

[0040] The first light emitting device includes a first electrode, a second electrode, a first unit and a first layer. The first electrode is formed on the insulating layer, the first unit is sandwiched between the first electrode and the second electrode, the first unit contains a first light emitting material, and the first unit has a first side surface.

[0041] The first layer is sandwiched between the first electrode and the first unit, contacts the first electrode, contains a carrier injection material, and has a higher concentration of the carrier injection material than the first side surface.

[0042] The second light-emitting device includes a third electrode, a fourth electrode, a second unit, and a second layer. The third electrode is formed on the insulating layer, adjacent to the first electrode, and arranged to sandwich a first gap between the third electrode and the first electrode. Furthermore, a second unit is sandwiched between the second layer and the fourth electrode, the second unit containing a second light-emitting material, and arranged to sandwich a second gap between the second unit and the first unit, with the second gap overlapping the first gap. Furthermore, the second unit has a second side surface, which is opposite to the first side surface.

[0043] The second layer is sandwiched between the third electrode and the second cell, the second layer being in contact with the third electrode, and the second layer being arranged to sandwich a third gap with the first layer, with the third gap overlapping the first gap. Furthermore, the second layer includes a carrier injection material, and the concentration of the carrier injection material in the second layer is higher than that in the second side surface.

[0044] This can suppress current flowing between the first electrode and the second electrode through the first side surface. Furthermore, current flowing between the third electrode and the fourth electrode through the second side surface can be suppressed. Furthermore, current that does not contribute to the emission of the first light-emitting device or current that does not contribute to the emission of the second light-emitting device can be reduced. Furthermore, the current efficiency of the light emission of the display device can be improved. As a result, a novel display device with excellent convenience, practicality, and reliability can be provided.

[0045] (4) In addition, one embodiment of the present invention is the display device described above, wherein an etching rate of the insulating layer in etching using an oxygen-containing gas is lower than that of the first unit.

[0046] Therefore, the appearance of the first and second cells can be adjusted by etching with an oxygen-containing gas. Furthermore, carrier injection material attached to the first or second side surface can be removed, leaving the first or second side surface nearly clean. Furthermore, the insulating layer can be protected from the effects of etching with an oxygen-containing gas. As a result, a novel display device with excellent convenience, practicality, and reliability can be provided.

[0047] (5) Another embodiment of the present invention is the above-mentioned display device including a third layer and a fourth layer.

[0048] The first electrode has a region sandwiched between the first layer and the third layer, and the third electrode has a region sandwiched between the second layer and the fourth layer.

[0049] The third layer has a region sandwiched between the first electrode and the insulating layer, has an etching rate lower than that of the first layer in an etching process using an oxygen-containing gas, and has conductivity.

[0050] The fourth layer has a region sandwiched between the third electrode and the insulating layer, is adjacent to the third layer, and is arranged with a fourth gap therebetween. The fourth layer is made of the same material as the third layer.

[0051] Therefore, the appearance of the first and second cells can be adjusted by etching with an oxygen-containing gas. Furthermore, carrier injection material attached to the first or second side surface can be removed, leaving the first or second side surface nearly clean. Furthermore, the insulating layer can be protected from the effects of etching with an oxygen-containing gas. Furthermore, the fourth gap can be used to prevent conduction between the first and third electrodes. As a result, a novel display device with excellent convenience, practicality, and reliability can be provided.

[0052] (6) Another embodiment of the present invention is the above-mentioned display device including the fifth layer, the sixth layer, and the conductive film.

[0053] The fifth layer overlaps with the first gap, contacts the insulating layer, comprises a first opening and a second opening, the first opening overlaps with the first electrode, and the second opening overlaps with the third electrode.

[0054] The sixth layer fills the first and second gaps and is sandwiched between the conductive film and the fifth layer. The sixth layer includes a third opening and a fourth opening. The third opening overlaps with the first electrode, and the fourth opening overlaps with the third electrode. The conductive film includes a second electrode and a fourth electrode.

[0055] (7) In addition, one embodiment of the present invention is a display module including: the above-mentioned display device; and at least one of a connector and an integrated circuit.

[0056] (8) In addition, one embodiment of the present invention is an electronic device including: the above-mentioned display device; and at least one of a battery, a camera, a speaker, and a microphone.

[0057] One embodiment of the present invention can provide a novel display device that is convenient, practical, or reliable. Furthermore, a novel display module that is convenient, practical, or reliable can be provided. Furthermore, a novel electronic device that is convenient, practical, or reliable can be provided. Furthermore, a novel display device, a novel display module, a novel electronic device, or a novel semiconductor device can be provided.

[0058] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of the above effects. Note that effects other than those described above can be understood and extracted from the description of the specification, drawings, claims, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] Figures 1A to 1C is a diagram illustrating a structure of a display device according to an embodiment; Figure 2A and Figure 2B is a diagram illustrating a structure of a display device according to an embodiment; Figure 3A and Figure 3B is a diagram illustrating a structure of a display device according to an embodiment; Figure 4A and Figure 4B is a diagram illustrating a structure of a display device according to an embodiment; Figure 5A and Figure 5B is a diagram illustrating a structure of a display device according to an embodiment; Figure 6 is a flowchart illustrating a method for manufacturing a display device according to an embodiment; Figure 7 is a diagram illustrating a method for manufacturing a display device according to an embodiment; Figure 8 is a diagram illustrating a method for manufacturing a display device according to an embodiment; Figure 9 is a diagram illustrating a method for manufacturing a display device according to an embodiment; Figure 10 is a diagram illustrating a method for manufacturing a display device according to an embodiment; Figure 11 is a diagram illustrating a method for manufacturing a display device according to an embodiment; Figure 12 is a diagram illustrating a method for manufacturing a display device according to an embodiment; Figure 13 is a diagram illustrating a method for manufacturing a display device according to an embodiment; Figure 14 is a diagram illustrating a method for manufacturing a display device according to an embodiment; Figure 15 is a diagram illustrating a method for manufacturing a display device according to an embodiment; Figure 16 is a diagram illustrating a method for manufacturing a display device according to an embodiment; Figure 17 is a diagram illustrating a method for manufacturing a display device according to an embodiment; Figure 18is a diagram illustrating a method for manufacturing a display device according to an embodiment; Figure 19 is a diagram illustrating a method for manufacturing a display device according to an embodiment; Figure 20 is a diagram illustrating a method for manufacturing a display device according to an embodiment; Figure 21 is a diagram illustrating a method for manufacturing a display device according to an embodiment; Figure 22 is a diagram illustrating a method for manufacturing a display device according to an embodiment; Figure 23 is a diagram illustrating a method for manufacturing a display device according to an embodiment; Figure 24 is a diagram illustrating a method for manufacturing a display device according to an embodiment; Figure 25A and Figure 25B is a diagram illustrating a structure of a display module according to an embodiment; Figures 26A to 26E is a diagram illustrating a structure of a display device according to an embodiment; Figure 27 is a diagram illustrating a structure of a display device according to an embodiment; Figure 28A and Figure 28B is a diagram illustrating a structure of a display device according to an embodiment; Figure 29 is a diagram illustrating a structure of a display device according to an embodiment; Figure 30 is a diagram illustrating a structure of a display device according to an embodiment; Figure 31 is a diagram illustrating a structure of a display device according to an embodiment; Figure 32 is a diagram illustrating a structure of a display device according to an embodiment; Figure 33 is a diagram illustrating a structure of a display device according to an embodiment; Figures 34A to 34C is a diagram illustrating a structure of a display device according to an embodiment; Figure 35 is a diagram illustrating a structure of a display device according to an embodiment; Figures 36A to 36D is a diagram illustrating a structure of a display device according to an embodiment; Figures 37A to 37E is a diagram illustrating a structure of a display device according to an embodiment; Figure 38 is a diagram illustrating a structure of a display device according to an embodiment; Figures 39A to 39D is a diagram illustrating a structure of an electronic device according to an embodiment; Figures 40A to 40F is a diagram illustrating a structure of an electronic device according to an embodiment; Figures 41A to 41G is a diagram illustrating a structure of an electronic device according to an embodiment; Figures 42A to 42C is a diagram illustrating the structure of a workpiece according to an embodiment; Figure 43 is a graph illustrating current density-luminance characteristics of a light emitting device according to an embodiment; Figure 44 is a graph illustrating luminance-current efficiency characteristics of a light emitting device according to an embodiment; Figure 45 is a graph illustrating voltage-luminance characteristics of a light emitting device according to an embodiment; Figure 46 is a graph illustrating voltage-current density characteristics of a light emitting device according to an embodiment; Figure 47 is a diagram illustrating an emission spectrum of a light emitting device according to an embodiment; Figure 48 is a diagram illustrating the structure of a workpiece according to an embodiment; Figure 49 is a graph illustrating current density-luminance characteristics of a light emitting device according to an embodiment; Figure 50 is a graph illustrating luminance-current efficiency characteristics of a light emitting device according to an embodiment; Figure 51 is a graph illustrating voltage-luminance characteristics of a light emitting device according to an embodiment; Figure 52 is a graph illustrating voltage-current density characteristics of a light emitting device according to an embodiment; Figure 53 is a diagram illustrating an emission spectrum of a light emitting device according to an embodiment; Figure 54 is a graph illustrating voltage-current density characteristics of a light emitting device according to an embodiment; Figure 55 is a graph illustrating current density-current efficiency characteristics of the light-emitting device manufactured in this example; Figure 56 is a graph illustrating current density-external quantum efficiency characteristics of the light-emitting device manufactured in this example; Figure 57 1 is a graph illustrating the luminance-blue index characteristics of the light-emitting device manufactured in this example. DETAILED DESCRIPTION

[0060] One embodiment of the present invention relates to a method for manufacturing a display device including a first light-emitting device, a second light-emitting device, and an insulating layer. The first light-emitting device includes a first electrode, a second electrode, a first unit cell, and a first layer. The first electrode is formed on the insulating layer, the first unit cell is sandwiched between the first and second electrodes, the first unit cell contains a first light-emitting material, and the first unit cell has a first side surface. Furthermore, the first layer is sandwiched between the first electrode and the first unit cell, the first layer is in contact with the first electrode, and the first layer contains a carrier injection material. Due to the inclusion of a step for reducing the profile of the first unit cell, the concentration of the carrier injection material in the first layer is higher than that on the first side surface. The second light-emitting device includes a third electrode, a fourth electrode, a second unit cell, and a second layer. The third electrode is formed on the insulating layer, adjacent to the first electrode, and arranged with a first gap between the third electrode and the first electrode. The second unit cell is sandwiched between the second layer and the fourth electrode, the second unit cell contains a second light-emitting material, and the second unit cell is arranged with a second gap between the second unit cell and the first unit cell, the second gap overlapping the first gap. The second unit cell has a second side surface, which is opposite to the first side surface. Note that the second layer is sandwiched between the third electrode and the second cell, making contact with the third electrode. The second layer is arranged with the first layer to sandwich a third gap, with the third gap overlapping the first gap. The second layer contains a carrier-injection material. Due to the process of reducing the profile of the second cell, the concentration of the carrier-injection material in the second layer is higher than that on the second side surface.

[0061] This can suppress current flowing between the first electrode and the second electrode through the first side surface. Furthermore, current flowing between the third electrode and the fourth electrode through the second side surface can be suppressed. Furthermore, current that does not contribute to the emission of the first light-emitting device or current that does not contribute to the emission of the second light-emitting device can be reduced. Furthermore, the current efficiency of the light emission of the display device can be improved. As a result, a novel display device with excellent convenience, practicality, and reliability can be provided.

[0062] The embodiments are described in detail with reference to the accompanying drawings. Note that the present invention is not limited to the following description, and a person skilled in the art can easily understand that its methods and details can be transformed into various forms without departing from the purpose and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the contents described in the embodiments shown below. Note that in the structure of the invention described below, the same figure marks are used in common between different drawings to represent the same parts or parts with the same functions, and their repeated descriptions are omitted.

[0063] In the drawings of this specification, components are classified according to their functions and shown as independent blocks in block diagrams. However, in practice, components are difficult to be completely divided according to their functions, and one component may involve multiple functions.

[0064] Implementation Method 1 In this embodiment, referring to Figures 1A to 5B A display device according to one embodiment of the present invention will be described.

[0065] Figure 1A It is a perspective view illustrating the structure of a display device according to one embodiment of the present invention. Figure 1B yes Figure 1A Front view of Figure 1C It is an explanation Figure 1A Front view of a part of.

[0066] Figure 2A It is explained along the Figure 1C A cross-sectional view of the structure of a display device according to one embodiment of the present invention taken along line P1-P2 is shown. Figure 2B Is the description and Figure 2A Cross-sections of different structures.

[0067] Figure 3A It is explained along the Figure 1C The truncation line P1-P2 and Figure 1B A cross-sectional view of the structure of a display device according to one embodiment of the present invention taken along line Q1-Q2 is shown. Figure 3B It is an explanation Figure 3A Cross-sectional view of a portion of.

[0068] Figure 4A Is the description and Figure 3A Cross-sections of different structures. Figure 4B It is an explanation Figure 4A Cross-sectional view of a portion of.

[0069] Figure 5A It is an explanation Figure 3A A cross-sectional view of a portion of Figure 5B It is an explanation Figure 4A Cross-sectional view of a portion of.

[0070] <Configuration Example 1 of Display Device> The display device 700 described in this embodiment includes a display area 731 and a conductive layer VCOM2 (see Figure 1A and Figure 1B ).

[0071] The display area 731 includes a group of pixels 703. The group of pixels 703 includes a pixel 702A, a pixel 702B, and a pixel 702C (see Figure 1C ).

[0072] The pixel 702A includes a light emitting device 550A and a pixel circuit 530A. The light emitting device 550A is connected to the pixel circuit 530A (see FIG. Figure 2A and Figure 2B ). Note that "connection" in this specification includes "electrical connection".

[0073] "A and B are electrically connected" includes the following situations: when A and B are not connected via an insulator (A and B are connected via a conductor or semiconductor, or A and B are in contact), there is a time sequence during circuit operation where electric signals are transferred or received, or electric potentials interact with each other. In other words, during circuit operation, even if there is a time sequence during which electric signals are not transferred or received, or electric potentials interact with each other, A and B can be said to be "electrically connected" as long as there is a time sequence during which electric signals are transferred or received, or electric potentials interact with each other.

[0074] The pixel 702B includes a light-emitting device 550B and a pixel circuit 530B, and the light-emitting device 550B is electrically connected to the pixel circuit 530B.

[0075] The pixel 702C includes a light-emitting device 550C and a pixel circuit 530C, and the light-emitting device 550C is electrically connected to the pixel circuit 530C.

[0076] The conductive layer VCOM2 is electrically connected to the light-emitting device 550A, the light-emitting device 550B, and the light-emitting device 550C and supplies a common potential.

[0077] The display device 700 includes a functional layer 520 , a substrate 510 , and a layer 573 .

[0078] The functional layer 520 includes an insulating layer 521. The insulating layer 521 is interposed between the light emitting device 550A and the pixel circuit 530A and has insulating properties.

[0079] Furthermore, the functional layer 520 includes pixel circuits 530A, 530B, and 530C. Pixel circuit 530A is sandwiched between the light-emitting device 550A and the substrate 510. Pixel circuit 530B is sandwiched between the light-emitting device 550B and the substrate 510. Pixel circuit 530C is sandwiched between the light-emitting device 550C and the substrate 510.

[0080] The layer 573 has an overlapping area with the insulating layer 521, and the overlapping area has a display area 731 (see Figure 1A Note that the light-emitting device 550A is sandwiched between the layer 573 and the insulating layer 521. For example, a material that transmits light emitted by the light-emitting device and has a refractive index of 1.8 or higher can be used for the layer 573. Alternatively, a film that is not easily permeable to impurities such as water and oxygen can be used for the layer 573. Specifically, a film containing nitrogen and silicon can be used for the layer 573.

[0081] In the display device 700 according to one embodiment of the present invention, the light-emitting device 550A emits light ELA in a direction where the pixel circuit 530A is not provided, the light-emitting device 550B emits light ELB in a direction where the pixel circuit 530B is not provided, and the light-emitting device 550C emits light ELC in a direction where the pixel circuit 530C is not provided (see FIG. Figure 2A ). In other words, the display device 700 according to one embodiment of the present invention is a top emission display device.

[0082] In the display device 700 according to one embodiment of the present invention, the light emitting device 550A emits light ELA in the direction where the pixel circuit 530A is arranged, the light emitting device 550B emits light ELB in the direction where the pixel circuit 530B is arranged, and the light emitting device 550C emits light ELC in the direction where the pixel circuit 530C is arranged (see FIG. Figure 2B ). In other words, the display device 700 according to one embodiment of the present invention is a bottom emission display device.

[0083] <Configuration Example 2 of Display Device> The display device 700 described in this embodiment includes a light-emitting device 550A, a light-emitting device 550B, a light-emitting device 550C, and an insulating layer 521 (see FIG. Figure 3A ).

[0084] For example, a structure that emits blue light can be used for light-emitting device 550A, a structure that emits green light can be used for light-emitting device 550B, and a structure that emits red light can be used for light-emitting device 550C. This makes it possible to provide a side-by-side display device with high current efficiency.

[0085] In addition, for example, a structure that emits white light can also be used for light-emitting device 550A, light-emitting device 550B and light-emitting device 550C, and a coloring layer that transmits blue light can be arranged overlapping with light-emitting device 550A, a coloring layer that transmits green light can be arranged overlapping with light-emitting device 550B, and a coloring layer that transmits red light can be arranged overlapping with light-emitting device 550C.

[0086] For example, a structure emitting blue light may be used for light-emitting devices 550A, 550B, and 550C, with a layer for converting blue light into green light being arranged overlapping with the light-emitting device 550B, and a layer for converting blue light into red light being arranged overlapping with the light-emitting device 550C.

[0087] The display device 700 includes a conductive layer VCOM2, a layer ESE, a conductive film 552, a layer 105, and a functional layer 520 (see Figure 3A ).

[0088] A layer REFE may be provided between the conductive layer VCOM2 and the insulating layer 521. For example, a material that can be used for the layer REFA described later can be used for the layer REFE. Furthermore, the conductive layer VCOM2 includes a region sandwiched between the conductive film 552 and the layer ESE. For example, a material that can be used for the layer ESA described later can be used for the layer ESE.

[0089] The conductive film 552 is electrically connected to the conductive layer VCOM2 at the connection portion Con. The conductive film 552 includes an electrode 552A, an electrode 552B, and an electrode 552C. In addition, the layer 105 includes a layer 105A, a layer 105B, and a layer 105C.

[0090] The functional layer 520 includes the insulating layer 501, the pixel circuit, and the insulating layer 521. The pixel circuit is sandwiched between the insulating layer 501 and the insulating layer 521.

[0091] <<Structural Example 1 of Light Emitting Device 550A>> Light-emitting device 550A includes an electrode 551A, an electrode 552A, a unit cell 103A, and a layer 104A. Electrode 551A is formed on insulating layer 521. Furthermore, a layer REFA may be disposed between electrode 551A and insulating layer 521. For example, a layer containing aluminum or silver may be used for layer REFA. This allows light emitted from light-emitting device 550A to be efficiently reflected toward layer REFA.

[0092] [Configuration Example 1 of Unit 103A] The cell 103A is sandwiched between the electrode 551A and the electrode 552A. The cell 103A includes a light-emitting material EMA. For example, a fluorescent light-emitting substance, a phosphorescent light-emitting substance, or a substance exhibiting thermally activated delayed fluorescence can be used as the light-emitting material EMA. In addition, the cell 103A has a side surface 103AS (see Figure 5A ).

[0093] Alternatively, a structure in which multiple layers are stacked may be used for unit 103A. For example, a layer having hole-transporting properties, a layer containing the light-emitting material EMA, and a layer having electron-transporting properties may be used for unit 103A. Furthermore, it is preferable to place the layer containing the light-emitting material EMA in the region where holes and electrons recombine. For example, the layer having hole-transporting properties is placed closer to the anode than the layer containing the light-emitting material EMA, and the layer having electron-transporting properties is placed closer to the cathode than the layer containing the light-emitting material EMA. This allows the energy generated by carrier recombination to be efficiently converted into light for emission.

[0094] [Structural Example of Layer 104A] The layer 104A is sandwiched between the electrode 551A and the cell 103A, and the layer 104A is in contact with the electrode 551A (see Figure 3A ). In addition, the layer 104A includes a carrier injection material CIM, and the concentration of the carrier injection material CIM in the layer 104A is higher than that in the side surface 103AS (see Figure 5A ).

[0095] [Example 1 of Carrier Injection Material CIM] For example, when the electrode 551A is used as an anode, a material having hole-injecting properties can be used as the carrier-injecting material CIM. Thus, the layer 104A can receive holes from the electrode 551A and transfer them to the cell 103A.

[0096] For example, the hole mobility can be calculated as 1×10 -3 cm 2 / Vs or less can be used for the layer 104A. 4 Ω·cm or more and 1×10 7 A film with a resistivity of Ω·cm or less is used for the layer 104A. In addition, the layer 104A preferably has a resistivity of 5×10 4 Ω·cm or more and 1×10 7 The resistivity is less than Ω·cm, more preferably 1×10 5 Ω·cm or more and 1×10 7 Resistivity below Ω·cm.

[0097] Specifically, a substance having electron-accepting properties can be used for the layer 104A. Alternatively, a composite material containing a plurality of substances can be used for the layer 104A.

[0098] An organic compound or an inorganic compound can be used for the substance having electron-accepting property. The substance having electron-accepting property can extract electrons from the adjacent hole-transporting layer or hole-transporting material by application of an electric field.

[0099] For example, a compound having an electron-withdrawing group (halogen group or cyano group) can be used as the substance having electron-accepting property. In addition, an organic compound having electron-accepting property can be easily deposited by vapor deposition.

[0100] [Example 2 of Carrier Injection Material CIM] When the electrode 551A is used as a cathode, a material having an electron injecting property can be used as the carrier injecting material CIM. Thus, the layer 104A can receive electrons from the electrode 551A and transfer them to the cell 103A.

[0101] Specifically, a substance having an electron-donating property can be used for the layer 104A. Alternatively, a composite material of a substance having an electron-donating property and a material having an electron-transporting property can be used for the layer 104A. Alternatively, an electron compound can be used for the layer 104A.

[0102] For example, alkali metals, alkaline earth metals, rare earth metals, or compounds thereof (oxides, halides, carbonates, etc.) can be used as the electron-donating substance. In addition, organic compounds such as tetrathianaphthacene (TTN), nickelocene, and decamethylnickelocene can be used as the electron-donating substance.

[0103] [Structural Example of Layer 105A] The layer 105A is sandwiched between the electrode 552A and the cell 103A, and the layer 105A is in contact with the electrode 552A (see Figure 3A ). In addition, layer 105A includes a carrier injection material.

[0104] For example, when the electrode 552A is used as a cathode, a material having electron injecting properties can be used for the layer 105A. Thus, the layer 105A can receive electrons from the electrode 552A and transfer them to the cell 103A.

[0105] For example, when the electrode 552A is used as an anode, a material having hole-injecting properties can be used for the layer 105A. Thus, the layer 105A can receive holes from the electrode 552A and transfer them to the cell 103A.

[0106] <<Structural Example 1 of Light-Emitting Device 550B>> The light emitting device 550B includes an electrode 551B, an electrode 552B, a unit 103B, and a layer 104B (see Figure 3A ).

[0107] Electrode 551B is formed on insulating layer 521. Electrode 551B is adjacent to electrode 551A and is arranged with a gap 551AB between electrode 551B and electrode 551A. A layer REFB may be arranged between electrode 551B and insulating layer 521. For example, the same material as that used for layer REFA may be used for layer REFB.

[0108] [Configuration Example 1 of Unit 103B] Cell 103B is sandwiched between layer 104B and electrode 552B and includes a light-emitting material EMB. Note that any material that can be used as the light-emitting material EMA can be used as the light-emitting material EMB. For example, a material that emits light of a different hue from that of the light-emitting material EMA can be used as the light-emitting material EMB.

[0109] The unit 103B is arranged so as to sandwich the gap 103AB with the unit 103A. The gap 103AB overlaps the gap 551AB. In addition, the unit 103B has a side surface 103BS (see Figure 5A ). The side surface 103BS is opposite to the side surface 103AS.

[0110] [Structural Example of Layer 104B] The layer 104B is sandwiched between the electrode 551B and the cell 103B, and the layer 104B is in contact with the electrode 551B (see Figure 3A ). Layer 104B is arranged with gap 104AB between layer 104A and gap 104AB, and gap 104AB overlaps gap 551AB. In addition, layer 104B includes carrier injection material CIM, and the concentration of carrier injection material CIM in layer 104B is higher than that in side surface 103BS (see Figure 5A Note that the carrier injection material that can be used for layer 104A can be used for layer 104B. For example, the concentration of the carrier injection material CIM in layer 104B is preferably 10 times or more, more preferably 100 times or more, and even more preferably 1000 times or more of the concentration of the carrier injection material CIM observed at side surface 103BS.

[0111] [Structural Example of Layer 105B] The layer 105B is sandwiched between the electrode 552B and the cell 103B, and the layer 105B is in contact with the electrode 552B (see Figure 3A ). In addition, layer 105B includes a carrier injection material and a material that can be used for layer 105A.

[0112] This suppresses the current flowing between electrode 551A and electrode 552A through side surface 103AS. Furthermore, the current flowing between electrode 551B and electrode 552B through side surface 103BS can be suppressed. Furthermore, the current that does not contribute to the light emission of light-emitting device 550A or the current that does not contribute to the light emission of light-emitting device 550B can be reduced. Furthermore, the current efficiency of light emission in the display device can be improved. As a result, a novel display device with excellent convenience, practicality, and reliability can be provided.

[0113] <<Structural Example 1 of Light-Emitting Device 550C>> The light emitting device 550C includes an electrode 551C, an electrode 552C, a unit 103C, and a layer 104C (see Figure 3A ). The electrode 551B is formed on the insulating layer 521. In addition, a layer REFC may be provided between the electrode 551C and the insulating layer 521. For example, a material that can be used for the layer REFA can be used for the layer REFC.

[0114] [Configuration Example 1 of Unit 103C] Cell 103C is sandwiched between layer 104C and electrode 552C and contains a light-emitting material. Note that any material that can be used as the light-emitting material EMA can be used for cell 103C. For example, a material that emits light of a different hue than the light-emitting material EMA can be used for cell 103C.

[0115] [Structural Example of Layer 104C] The layer 104C is sandwiched between the electrode 551C and the cell 103C, and the layer 104C is in contact with the electrode 551C (see Figure 3A ). Note that the carrier injection material that can be used for layer 104A can be used for layer 104C.

[0116] [Structural Example of Layer 105C] The layer 105C is sandwiched between the electrode 552C and the cell 103C, and the layer 105C is in contact with the electrode 552C (see Figure 3A ). In addition, layer 105C includes a carrier injection material and a material that can be used for layer 105A.

[0117] [Structural Example of the Insulating Layer 521] The insulating layer 521 has an etching rate lower in the etching process using the oxygen-containing gas than the cell 103A. For example, silicon oxide, silicon nitride, aluminum oxide, or zirconium oxide can be used for the insulating layer 521.

[0118] Therefore, the outer shapes of cells 103A and 103B can be adjusted by etching with an oxygen-containing gas. Furthermore, carrier injection material CIM attached to side surface 103AS or side surface 103BS can be removed, resulting in a nearly clean state. Furthermore, insulating layer 521 can be protected from the effects of etching with an oxygen-containing gas. Consequently, a novel display device with excellent convenience, practicality, and reliability can be provided.

[0119] <Configuration Example 3 of Display Device> The display device 700 described in this embodiment includes a layer ESA, a layer ESB, and a layer ESC (see Figure 3A The electrode 551A has a region sandwiched between the layer 104A and the layer ESA, and the electrode 551B has a region sandwiched between the layer 104B and the layer ESB. In addition, the electrode 551C has a region sandwiched between the layer 104C and the layer ESC.

[0120] The ESA layer has a region sandwiched between the electrode 551A and the insulating layer 521. The etching rate of the ESA layer in the etching process using the oxygen-containing gas is lower than that of the cell 103A. In addition, the ESA layer has conductivity.

[0121] Layer ESB has a region sandwiched between the electrode 551B and the insulating layer 521. Layer ESB is adjacent to layer ESA and is arranged with a gap ESAB between layer ESA and layer ESA. Layer ESB is made of the same material as layer ESA.

[0122] For example, tungsten, molybdenum, aluminum, titanium, or tantalum can be used for the ESA, ESB, and ESC layers. Furthermore, for example, indium oxide-tin oxide (ITO), indium oxide-tin oxide containing silicon or silicon oxide (ITSO), indium oxide-zinc oxide (registered trademark: IZO), indium oxide-gallium oxide-zinc oxide (IGZO), and aluminum oxide-zinc oxide (AZO) can be used for the ESA, ESB, and ESC layers.

[0123] Therefore, the shape of cell 103A and cell 103B can be adjusted by etching with an oxygen-containing gas. Furthermore, carrier injection material CIM attached to side surface 103AS or side surface 103BS can be removed, resulting in a nearly clean state. Furthermore, insulating layer 521 can be protected from the effects of etching with an oxygen-containing gas. Furthermore, gap ESAB can be used to prevent conduction between electrode 551A and electrode 551B. As a result, a novel display device with excellent convenience, practicality, and reliability can be provided.

[0124] <Configuration Example 4 of Display Device> The display device 700 described in this embodiment includes a layer 529_1, a layer 529_2, and a conductive film 552 (see Figure 3A The layer 529_1 overlaps with the gap 551AB, and the layer 529_1 is in contact with the insulating layer 521 .

[0125] The layer 529_1 includes an opening 529_1A and an opening 529_1B (see Figure 3B The opening 529_1A overlaps with the electrode 551A, and the opening 529_1B overlaps with the electrode 551B.

[0126] Layer 529_2 fills gap 551AB and gap 103AB (see Figure 3A ). The layer 529_2 is sandwiched between the conductive film 552 and the layer 529_1 (see Figure 5A ).

[0127] The layer 529_2 includes an opening 529_2A and an opening 529_2B (see Figure 3B ). The opening 529_2A overlaps with the electrode 551A, and the opening 529_2B overlaps with the electrode 551B. The conductive film 552 includes an electrode 552A and an electrode 552B (see Figure 3A ).

[0128] The display device 700 includes a layer SCRA2, a layer SCRB2, and a layer SCRC2. The layer SCRA2 is sandwiched between the layer 529_1 and the cell 103A, the layer SCRB2 is sandwiched between the layer 529_1 and the cell 103B, and the layer SCRC2 is sandwiched between the layer 529_1 and the cell 103C.

[0129] <Structural Example 5 of Display Device> In this embodiment, reference is made to Figure 4A 、 Figure 4B and Figure 5B The structure of the light emitting device 550A and the structure of the light emitting device 550B of the display device 700 are similar to those of the light emitting device 550A and the light emitting device 550B of the display device 700. Figure 3A 、 Figure 3B and Figure 5A The display devices described are different. The differences will be described in detail here, and the above description is used for the same structures.

[0130] <<Structural Example 2 of Light Emitting Device 550A>> The light emitting device 550A includes an electrode 551A, an electrode 552A, a unit 103A, an intermediate layer 106A, a unit 103A2, and a layer 104A (see Figure 4A The electrode 551A is formed on the insulating layer 521.

[0131] In other words, the light-emitting device 550A includes a plurality of stacked units between the electrode 551A and the electrode 552A. Furthermore, the number of stacked units is not limited to two and may be three or more. A structure including the plurality of stacked units between the electrode 551A and the electrode 552A and the intermediate layer 106A located between the plurality of units is sometimes referred to as a stacked light-emitting device or a tandem light-emitting device.

[0132] Therefore, it is possible to obtain high-brightness luminescence while maintaining a low current density. Furthermore, reliability can be improved. Furthermore, the driving voltage can be reduced when comparing at the same brightness. Furthermore, power consumption can be suppressed.

[0133] [Configuration Example 2 of Unit 103A] The cell 103A is sandwiched between the electrode 551A and the electrode 552A. The cell 103A includes a light-emitting material EMA. For example, a fluorescent light-emitting substance, a phosphorescent light-emitting substance, or a substance exhibiting thermally activated delayed fluorescence can be used as the light-emitting material EMA. In addition, the cell 103A has a side surface 103AS (see Figure 5B ).

[0134] [Configuration Example of Unit 103A2] The cell 103A2 is sandwiched between the cell 103A and the electrode 552A. The cell 103A2 includes a light-emitting material (see Figure 4ANote that a material that can be used as the luminescent material EMA can be used for the cell 103A2. For example, the same material can be used for the cell 103A and the cell 103A2. Alternatively, a material that emits the same hue as the luminescent material EMA can be used for the cell 103A2. Alternatively, a material that emits a different hue from the luminescent material EMA can be used for the cell 103A2.

[0135] [Example of the intermediate layer 106A] The intermediate layer 106A has a function of supplying electrons to the anode side and holes to the cathode side when a voltage is applied. The intermediate layer 106A can also be referred to as a charge generation layer.

[0136] Intermediate layer 106A is sandwiched between cell 103A2 and cell 103A. Intermediate layer 106A has the function of injecting holes into one of cell 103A2 and cell 103A, and injecting electrons into the other. For example, when electrode 552A functions as a cathode, intermediate layer 106A supplies holes to cell 103A2 and electrons to cell 103A. Alternatively, when electrode 552A functions as an anode, intermediate layer 106A supplies electrons to cell 103A2 and holes to cell 103A.

[0137] For example, a stacked film can be used for the intermediate layer 106A. Specifically, a stacked film comprising a film containing a material having hole-injection properties and a film containing a material having electron-injection properties can be used for the intermediate layer 106A. Alternatively, a stacked film comprising a film containing a material having a LUMO level of -5.0 eV or higher, preferably -5.0 eV or higher and -3.0 eV or lower, sandwiched between the film containing the material having hole-injection properties and the film containing the material having electron-injection properties can be used for the intermediate layer 106A.

[0138] <<Structural Example 2 of Light-Emitting Device 550B>> The light emitting device 550B includes an electrode 551B, an electrode 552B, a unit 103B, an intermediate layer 106B, a unit 103B2, and a layer 104B (see Figure 4A ).

[0139] [Configuration Example 2 of Unit 103B] Cell 103B is sandwiched between layer 104B and electrode 552B and includes a light-emitting material EMB. Note that any material that can be used as the light-emitting material EMA can be used as the light-emitting material EMB. For example, a material that emits light of a different hue from that of the light-emitting material EMA can be used as the light-emitting material EMB.

[0140] In addition, the unit 103B is arranged so as to sandwich the gap 103AB with the unit 103A. The gap 103AB overlaps the gap 551AB. In addition, the unit 103B has a side surface 103BS (see Figure 5B ). The side surface 103BS is opposite to the side surface 103AS.

[0141] [Structural Example of Unit 103B2] The unit 103B2 is sandwiched between the unit 103B and the electrode 552B. The unit 103B2 includes a light-emitting material (see Figure 4A Note that a material that can be used as the light-emitting material EMB can be used for cell 103B2. For example, the same material can be used for cell 103B and cell 103B2. Alternatively, a material that emits the same hue as the light-emitting material EMB can be used for cell 103B2. Alternatively, a material that emits a different hue from the light-emitting material EMB can be used for cell 103B2.

[0142] [Structural Example of Intermediate Layer 106B] Intermediate layer 106B is sandwiched between cell 103B2 and cell 103B. Intermediate layer 106B has the function of injecting holes into one of cell 103B2 and cell 103B, and injecting electrons into the other. For example, when electrode 552B functions as a cathode, intermediate layer 106B supplies holes to cell 103B2 and electrons to cell 103B. Alternatively, when electrode 552B functions as an anode, intermediate layer 106B supplies electrons to cell 103B2 and holes to cell 103B.

[0143] For example, the material that can be used for the intermediate layer 106A can be used for the intermediate layer 106B.

[0144] The intermediate layer 106B is arranged with the intermediate layer 106A with a gap 106AB therebetween (see Figure 4A ). This can suppress the current flowing between the intermediate layer 106B and the intermediate layer 106A, and can prevent the phenomenon in which one adjacent light-emitting device emits light at an unexpected brightness when the other light-emitting device is illuminated. Furthermore, adjacent light-emitting devices can be made to emit light independently. Furthermore, crosstalk between light-emitting devices can be suppressed. Furthermore, a display device capable of displaying a wide color gamut can be provided.

[0145] <<Structural Example 2 of Light-Emitting Device 550C>> The light emitting device 550C includes an electrode 551C, an electrode 552C, a unit 103C, an intermediate layer 106C, a unit 103C2, and a layer 104C (see Figure 4A ).

[0146] [Configuration Example 2 of Unit 103C] Cell 103C is sandwiched between layer 104C and electrode 552C and contains a light-emitting material. Note that a material that can be used as the light-emitting material EMA can be used for cell 103C. For example, a material that emits light of a different hue from that of the light-emitting material EMA and also different from that of the light-emitting material EMB can be used for cell 103C.

[0147] [Structural Example of Unit 103C2] The unit 103C2 is sandwiched between the unit 103C and the electrode 552C. The unit 103C2 includes a light-emitting material (see Figure 4A Note that the same luminescent material as that used for cell 103C can be used for cell 103C2. For example, the same material can be used for cell 103C and cell 103C2. Alternatively, a material having the same hue as that of the luminescent material used for cell 103C can be used for cell 103C2. Alternatively, a material having a different hue than that of the luminescent material used for cell 103C can be used for cell 103C2.

[0148] [Structural Example of Intermediate Layer 106C] Intermediate layer 106C is sandwiched between cell 103C2 and cell 103C. Intermediate layer 106C has the function of injecting holes into one of cell 103C2 and cell 103C, and injecting electrons into the other. For example, when electrode 552C functions as a cathode, intermediate layer 106C supplies holes to cell 103C2 and electrons to cell 103C. Alternatively, when electrode 552C functions as an anode, intermediate layer 106C supplies electrons to cell 103C2 and holes to cell 103C.

[0149] For example, the material that can be used for the intermediate layer 106A can be used for the intermediate layer 106C.

[0150] Note that this embodiment mode can be combined with other embodiment modes described in this specification as appropriate.

[0151] Implementation Method 2 In this embodiment, referring to Figures 6 to 24 A method for manufacturing a display device according to one embodiment of the present invention will be described.

[0152] <Example of a Method for Manufacturing Display Device 700> The manufacturing method of the display device described in this embodiment has the following stages from the beginning to the end (see Figure 6 ).

[0153] <<Phase PH0>> Phase PH0 is a phase for forming a circuit board of a display device.

[0154] In the phase PH0, a functional layer 520 is formed on the substrate 510 (refer to Figure 7 The functional layer 520 includes an insulating layer 501 and an insulating layer 521. In addition, the functional layer 520 includes a pixel circuit or a driver circuit between the insulating layer 501 and the insulating layer 521, for example.

[0155] <<Phase PH1>> Phase PH1 is a phase in which electrodes 551A, 551B, 551C, and a conductive layer VCOM2 are formed (see Figures 7 to 9 ).

[0156] [Step 1] In the first step of phase PH1, a film ES is formed on the insulating layer 521 (see Figure 7 For example, a film containing silicon nitride can be formed over the insulating layer 521 by a CVD method and used as the film ES. Alternatively, for example, tungsten can be formed over the insulating layer 521 by a sputtering method and used as the film ES.

[0157] Furthermore, layers REFA, REFB, REFC, and REFE are formed on the insulating layer 521. For example, films that will later become layers ESA, ESB, ESC, and ESE are formed on the film ES by sputtering. Furthermore, a photoresist PR is formed, and layers REFA, REFB, REFC, and REFE are formed by photolithography. Specifically, a stacked film formed by stacking a film containing titanium, a film containing aluminum, and a film containing titanium can be used as the layers REFA, REFB, REFC, and REFE.

[0158] Note that instead of forming the film ES, layers REFA, REFB, REFC, and REFE may be formed over the insulating layer 521. In this case, layer REFA connects the light-emitting device 550A to the pixel circuit, layer REFB connects the light-emitting device 550B to the pixel circuit, and layer REFC connects the light-emitting device 550C to the pixel circuit.

[0159] Furthermore, a conductive film 551 is formed on the layers REFA, REFB, REFC, and REFE (see FIG. Figure 8 ). For example, the conductive film 551 is formed by a sputtering method. Specifically, indium oxide-tin oxide (abbreviated as: ITSO) containing silicon or silicon oxide can be used for the conductive film 551.

[0160] Note that the conductive film 551 may be formed over the insulating layer 521 without forming the film ES, the layer REFA, the layer REFB, the layer REFC, and the layer REFE.

[0161] [Step 2] In the second step of phase PH1, a photoresist PR is formed on the conductive film 551, and an electrode 551A, an electrode 551B, and a gap 551AB are formed on the insulating layer 521 by photolithography (see FIG. Figure 9 Note that a gap 551AB is provided between the electrode 551A and the electrode 551B. Furthermore, an electrode 551C and a conductive layer VCOM2 are formed.

[0162] In addition, a film that will later become layer REFA, layer REFB, layer REFC, and layer REFE can also be formed on the insulating layer 521. After the conductive film 551 is formed, layer REFA, layer REFB, layer REFC, layer REFE, electrode 551A, electrode 551B, electrode 551C, gap 551AB, and conductive layer VCOM2 are formed by photolithography.

[0163] <<Phase PH2A>> Phase PH2A is a phase for forming a portion of the light emitting device 550A. Specifically, the layer 104A, the unit 103A, the intermediate layer 106A, and the unit 103A2 are formed (see FIG. Figures 10 to 13 ).

[0164] [Step 1] In the first step of phase PH2A, a film 104a is formed on the electrode 551A and the electrode 551B (see Figure 10 ). In addition, a film 104a is formed on the electrode 551C and the conductive layer VCOM2. For example, the film 104a can be formed using a resistance heating method. Specifically, an organic compound can be evaporated or co-evaporated.

[0165] [Step 2] In the second step of phase PH2A, film 103a is formed on film 104a. Note that when the light-emitting device employs a tandem structure, film 106a is formed on film 103a, and film 103a2 is formed on film 106a. For example, film 106a and film 103a2 can be formed using resistance heating. Specifically, an organic compound can be evaporated or co-evaporated.

[0166] [Step 3] In the third step of the phase PH2A, a film SCRa2 (see Figure 11 Note that when the light-emitting device adopts a tandem structure, the film 106a and the film 103a2 are sandwiched between the film 103a and the film SCRa2. Note that a shadow mask may be used to prevent the films 104a, 103a, 106a, and 103a2 from being formed on the conductive layer VCOM2.

[0167] For example, when a film containing aluminum oxide having a thickness of 30 nm is used as the film SCRa2 , the film SCRa2 can be formed by an atomic layer deposition (ALD: Atomic Layer Deposition) method.

[0168] [Step 4] In the fourth step of phase PH2A, film SCRa1 is formed on film SCRa2. For example, when a film containing tungsten with a thickness of 50 nm is used as film SCRa1, film SCRa1 can be formed by sputtering.

[0169] [Step 5] In the fifth step of phase PH2A, a photoresist PR is formed on the film SCRa1, and the film SCRa1 on the electrodes 551B and 551C is removed by photolithography to form a layer SCRA1 overlapping the electrode 551A (see FIG. Figure 12 ). For example, when a film containing tungsten is used as the film SCRa1, a gas containing sulfur hexafluoride (SF 6 ) can be used for etching the film SCRa1.

[0170] [Step 6] In the sixth step of phase PH2A, the film SCRa2 and the film 103a on the electrode 551B and the electrode 551C are removed by etching using the layer SCRA1 to form the layer SCRA2, the cell 103A and the layer 104A on the electrode 551A (see FIG. Figure 13 ). Layer SCRA2 is sandwiched between layer SCRA1 and electrode 551A. In addition, cell 103A is sandwiched between layer SCRA2 and electrode 551A. Note that when the light-emitting device adopts a tandem structure, intermediate layer 106A and cell 103A2 are sandwiched between cell 103A and layer SCRA2.

[0171] For example, when a film containing aluminum oxide is used as the film SCRa2, a gas containing trifluoromethane (CHF3), helium (He), and methane (CH4) can be used to etch the film SCRa2. For example, when an organic compound is used for the film 103a, etc., an oxygen-containing gas can be used to etch the film 103a. Furthermore, the layer SCRA1 is used as a hard mask.

[0172] In addition, layer SCRE1 is formed in the step of forming layer SCRA1, and layer SCRE2 is formed in the step of forming layer SCRA2. Layer SCRE1 overlaps with conductive layer VCOM2, and layer SCRE2 is sandwiched between layer SCRE1 and conductive layer VCOM2.

[0173] Alternatively, layer SCRE1 may be formed in the step of forming layer SCRB1 described later, and layer SCRE2 may be formed in the step of forming layer SCRB2. Alternatively, layer SCRE1 may be formed in the step of forming layer SCRC1 described later, and layer SCRE2 may be formed in the step of forming layer SCRC2.

[0174] Phase PH2B Phase PH2B is a phase for forming a portion of the light emitting device 550B. Specifically, the layer 104B, the unit 103B, the intermediate layer 106B, and the unit 103B2 (see FIG. Figure 14 and Figure 15 ). Here, the parts where the methods are different are described in detail, and the above description is cited for the parts where the same method can be used.

[0175] [Step 1] In the first step of phase PH2B, a film 104b is formed on the layer SCRA1 and the electrode 551B (see Figure 14 ). Furthermore, a film 104b is formed on the electrode 551C and the conductive layer VCOM2. Note that when the film 104b is formed, the material for the film 104b adheres to a portion of the light-emitting device 550A formed in stage PH2A. For example, when the film 104b is formed using resistance heating, the material for the film 104b also adheres to the side surfaces of the cell 103A.

[0176] [Step 2] In the second step of phase PH2B, the film 103b is formed on the film 104b. Note that when the light-emitting device adopts a tandem structure, the film 106b is formed on the film 103b, and the film 103b2 is formed on the film 106b.

[0177] [Step 3] In the third step of phase PH2B, a film SCRb2 is formed on the film 103b. Note that when the light-emitting device adopts a tandem structure, the film 106b and the film 103b2 are sandwiched between the film 103b and the film SCRb2. Note that the material that can be used for the film SCRa2 can be used for the film SCRb2.

[0178] [Step 4] In the fourth step of phase PH2B, a film to be a layer SCRB1 is formed on the film SCRb2. Note that the material that can be used for the film SCRa1 can be used for the film to be a layer SCRB1.

[0179] [Step 5] In the fifth step of phase PH2B, a photoresist PR is formed on the film that will later become layer SCRB1. Unnecessary portions on layer SCRA1 and electrode 551C are removed by photolithography, thereby forming layer SCRB1 that overlaps electrode 551B. For example, when tungsten is used for layer SCRB1, a gas containing SF6 can be used for etching.

[0180] [Step 6] In the sixth step of phase PH2B, the film SCRb2 and the film 103b on the layer SCRA1 and in the gap 551AB are removed by etching the layer SCRB1, and the layer SCRB2, the cell 103B and the layer 104B are formed on the electrode 551B (see FIG. Figure 15 ). Furthermore, gap 103AB is formed above gap 551AB. Layer SCRB2 is sandwiched between layer SCRB1 and electrode 551B. Furthermore, cell 103B is sandwiched between layer SCRB2 and electrode 551B, with gap 103AB overlapping gap 551AB. Note that when the light-emitting device employs a tandem structure, intermediate layer 106B and cell 103B2 are sandwiched between cell 103B and layer SCRB2.

[0181] For example, when a film containing aluminum oxide is used as the film SCRb2, a gas containing CHF3, He, and CH4 can be used to etch the film SCRb2. For example, when an organic compound is used for the film 103b, etc., an oxygen-containing gas can be used to etch the film 103b. Furthermore, the layer SCRB1 is used as a hard mask.

[0182] <<Phase PH2C>> Phase PH2C is a phase for forming a portion of the light emitting device 550C. Specifically, the layer 104C, the unit 103C, the intermediate layer 106C, and the unit 103C2 (see FIG. Figure 16 and Figure 17 ). Here, the parts where the methods are different are described in detail, and the above description is cited for the parts where the same method can be used.

[0183] [Step 1] In the first step of phase PH2C, a film 104c is formed on the layers SCRA1, SCRB1, and the electrode 551C (see Figure 16 ). Furthermore, a film 104c is formed on the conductive layer VCOM2. Note that when the film 104c is formed, the material for the film 104c adheres to a portion of the light-emitting device 550B formed in stage PH2B. For example, when the film 104c is formed using resistance heating, the material for the film 104c also adheres to the side surfaces of the cell 103B.

[0184] [Step 2] In the second step of phase PH2C, the film 103c is formed on the film 104c. Note that when the light-emitting device adopts a tandem structure, the film 106c is formed on the film 103c, and the film 103c2 is formed on the film 106c.

[0185] [Step 3] In the third step of phase PH2C, a film SCRc2 is formed on the film 103c. Note that when the light-emitting device adopts a tandem structure, the film 106c and the film 103c2 are sandwiched between the film 103c and the film SCRc2. Note that the material that can be used for the film SCRa2 can be used for the film SCRc2.

[0186] [Step 4] In the fourth step of the phase PH2C, a film that will later become the layer SCRC1 is formed on the film SCRc2. Note that the material that can be used for the film SCRa1 can be used for the film that will later become the layer SCRC1.

[0187] [Step 5] In the fifth step of phase PH2C, a photoresist PR is formed on the film that will later become layer SCRC1, and unnecessary portions on layer SCRA1 and layer SCRB1 are removed by photolithography, thereby forming layer SCRC1 that overlaps with electrode 551C. For example, when tungsten is used for layer SCRC1, a gas containing SF6 can be used for etching.

[0188] [Step 6] In the sixth step of phase PH2C, the film SCRc2 and the film 103c on the layer SCRA1, the layer SCRB1 and the gap 551AB are removed by etching, and the layer SCRC2, the cell 103C and the layer 104C are formed on the electrode 551C (see FIG. Figure 17 ). Layer SCRC2 is sandwiched between layer SCRC1 and electrode 551C. In addition, cell 103C is sandwiched between layer SCRC2 and electrode 551C. Note that when the light-emitting device adopts a tandem structure, intermediate layer 106C and cell 103C2 are sandwiched between cell 103C and layer SCRC2.

[0189] For example, when a film containing aluminum oxide is used as the film SCRc2, a gas containing CHF3, He, and CH4 can be used to etch the film SCRc2. For example, when an organic compound is used for the film 103c, for example, an oxygen-containing gas can be used to etch the film 103c. In addition, the layer SCRC1 is used as a hard mask.

[0190] <<Phase PH3>> Phase PH3 is a phase in which the outer shapes of the unit 103A of the light emitting device 550A, the unit 103B of the light emitting device 550B, and the unit 103C of the light emitting device 550C are adjusted to form the side surfaces (see FIG. Figures 18 to 21 ).

[0191] [Step 1] In the first step of phase PH3, a film SCR3 is formed on the layers SCRA1, SCRB1, and SCRC1, and then a photoresist PR is formed (see Figure 18 Film SCR3 covers a portion of light-emitting device 550A formed in stage PH2A, a portion of light-emitting device 550B formed in stage PH2B, and a portion of light-emitting device 550C formed in stage PH2C. For example, film SCR3 covers the side surfaces of cell 103A, cell 103B, and cell 103C. This prevents the solution containing the photosensitive polymer from contacting cell 103A, cell 103B, or cell 103C during the formation of photoresist PR. Furthermore, it prevents the solution containing the photosensitive polymer from dissolving a portion of cell 103A, a portion of cell 103B, or a portion of cell 103C.

[0192] For example, when a film containing aluminum oxide having a thickness of 30 nm is used as the film SCR3 , the film SCR3 can be formed using the ALD method.

[0193] [Step 2] In the second step of phase PH3, unnecessary portions of the film SCR3 are removed by etching using a photoresist PR to form layers SCRA3, SCRB3, and SCRC3 (see Figure 19 Layer SCRA3 overlaps with electrode 551A and has a smaller profile than layer SCRA1. Furthermore, layer SCRB3 overlaps with electrode 551B and has a smaller profile than layer SCRB1. Furthermore, layer SCRC3 overlaps with electrode 551C and has a smaller profile than layer SCRC1. For example, when a film containing aluminum oxide is used as film SCR3, a gas containing CHF3, He, and CH4 can be used to etch film SCR3.

[0194] [Step 3] In the third step of phase PH3, the outer shape of the layer SCRA1, the outer shape of the layer SCRB1, and the outer shape of the layer SCRC1 are reduced by etching the photoresist PR or etching the layers SCRA3, SCRB3, and SCRC3 (see FIG. Figure 19For example, when a film containing tungsten is used for the layers SCRA1, SCRB1, and SCRC1, a gas containing SF 6 can be used for etching the layers SCRA1, SCRB1, and SCRC1.

[0195] [Step 4] In the fourth step of phase PH3, the layers SCRA1, SCRB1, and SCRC1 are used to reduce the profiles of the layers SCRA2, SCRB2, SCRC2, cells 103A, 103B, 103C, layers 104A, 104B, and 104C (see FIG. Figure 20 ). Furthermore, when the light-emitting device employs a tandem structure, the outer dimensions of intermediate layer 106A, intermediate layer 106B, intermediate layer 106C, cell 103A2, cell 103B2, and cell 103C2 are reduced. Furthermore, unnecessary portions of conductive layer VCOM2 are removed. Thus, the portion for attaching the material for film 104b can be removed from cell 103A. Furthermore, the portion for attaching the material for film 104c can be removed from cell 103B. Furthermore, when the light-emitting device employs a tandem structure, the portion for attaching the material for film 104b can be removed from intermediate layer 106A and cell 103A2. Furthermore, the portion for attaching the material for film 104c can be removed from intermediate layer 106B and cell 103B2.

[0196] Note that when the same material is used for the layers SCRA3, SCRB3, SCRC3, SCRA2, SCRB2, and SCRC2, the etching method of this step can be used to remove unnecessary portions. For example, when aluminum oxide is used for the layers SCRA3, SCRB3, SCRC3, SCRA2, SCRB2, and SCRC2, a gas containing CHF3, He, and CH4 can be used to etch the layers SCRA3, SCRB3, SCRC3, SCRA2, SCRB2, and SCRC2. For example, when an organic compound is used for cells 103A, 103B, and 103C, an oxygen-containing gas can be used to etch the cells 103A, 103B, and 103C. Furthermore, the layers SCRA1, SCRB1, and SCRC1 serve as a hard mask. Furthermore, when a film ES is formed on the functional layer 520, the film ES can protect the functional layer 520 from the etching process of this step.

[0197] [Step 5] In the fifth step of phase PH3, the layers SCRA1, SCRB1 and SCRC1 are removed by etching (see Figure 21For example, when a film containing tungsten is used for the layers SCRA1, SCRB1, and SCRC1, a gas containing SF 6 can be used for etching the layers SCRA1, SCRB1, and SCRC1.

[0198] Furthermore, unnecessary portions are removed from the film ES to form a layer ESA, a layer ESB, and a gap ESAB. Furthermore, a layer ESC and a layer ESE are formed. Note that the layer ESA is sandwiched between the electrode 551A and the insulating layer 521, and the layer ESB is sandwiched between the electrode 551B and the insulating layer 521. Furthermore, the gap ESAB overlaps with the gap 551AB. For example, when a film containing tungsten is used as the film ES, a gas containing SF6 can be used to etch the film ES.

[0199] <<Phase PH4>> Phase PH4 is a phase in which layers 529_1 and 529_2 are formed (see Figure 22 and Figure 23 ).

[0200] [Step 1] In the first step of phase PH4, a layer 529_1 is formed (cf. Figure 22 Layer 529_1 contacts insulating layer 521 at gap 551AB and covers cell 103A and cell 103B. Furthermore, layer 529_1 also covers cell 103C. Note that when the light-emitting device employs a tandem structure, layer 529_1 covers intermediate layer 106A, intermediate layer 106B, intermediate layer 106C, cell 103B2, and cell 103C2.

[0201] For example, when a film containing aluminum oxide is used for the layer 529_1, the layer 529_1 can be formed by an ALD method.

[0202] [Step 2] In the second step of phase PH4, layer 529_2 is formed. Layer 529_2 fills gap 551AB and gap 103AB. Furthermore, layer 529_2 includes opening 529_2A overlapping electrode 551A and opening 529_2B overlapping electrode 551B. Layer 529_2 also includes opening 529_2C overlapping electrode 551C and opening 529_2E overlapping conductive layer VCOM2.

[0203] For example, a photosensitive polymer can be used for the layer 529_2. Specifically, a film containing the photosensitive polymer is formed by spin coating, and the openings 529_2A, 529_2B, 529_2C, and 529_2E are formed by photolithography.

[0204] [Step 3] In the third step of phase PH4, the layer 529_2 is removed by wet etching of the layer 529_1 and the layer SCRA2 overlapping the opening 529_2A, and the layer 529_1 and the layer SCRB2 overlapping the opening 529_2B are removed (see FIG. Figure 23 ). In addition, the layer 529_1 and the layer SCRC2 overlapping the opening 529_2C are removed, and the layer 529_1 overlapping the opening 529_2E is removed. For example, when aluminum oxide is used for the layer 529_1, the layer SCRA2, the layer SCRB2, and the layer SCRC2, an aqueous solution containing hydrofluoric acid (HF) can be used for etching.

[0205] Alternatively, the layer 529_2 may be softened to fluidize the layer 529_2. For example, the workpiece WP on which the layer 529_2 is formed may be heated.

[0206] <<Phase PH5>> Phase PH5 is a phase for forming the layer 105 and the conductive film 552 (see Figure 24 ).

[0207] [Step 1] In the first step of phase PH5, layer 105 is formed on cells 103A, 103B, 103C, and conductive layer VCOM2 (see FIG. Figure 24 Note that when the light-emitting device has a tandem structure, the layer 105 is formed on the cell 103A2, the cell 103B2, and the cell 103C2.

[0208] [Step 2] In the second step of phase PH5, a conductive film 552 is formed on layer 105. For example, the conductive film 552 can be formed using a resistance heating method. Specifically, a film containing silver and magnesium can be co-evaporated. Alternatively, a film containing indium oxide-tin oxide (ITO) can be stacked on the film containing silver and magnesium using a sputtering method.

[0209] [Step 3] In the third step of stage PH5, a layer 573 is formed on the conductive film 552. For example, a film made of ITO can be formed by sputtering and used for the layer 573. Alternatively, a film made of an organic compound having a refractive index of 1.8 or greater that transmits light emitted by the light-emitting device can be formed by resistance heating and used for the layer 573. Furthermore, a film that is not easily permeable to impurities such as water and oxygen can be formed by CVD or ALD and used for the layer 573.

[0210] Thus, for example, in the fourth step of stage PH3, the carrier injection material CIM attached to side surface 103AS in the first step of stage PH2B can be removed. Furthermore, the current flowing between electrode 551A and electrode 552A through side surface 103AS can be suppressed. Furthermore, the current flowing between electrode 551B and electrode 552B through side surface 103BS can be suppressed. Furthermore, the current that does not contribute to the light emission of light-emitting device 550A or the current that does not contribute to the light emission of light-emitting device 550B can be reduced. Furthermore, the current efficiency of light emission in the display device can be improved.

[0211] Furthermore, in the fourth step of phase PH3, etching using an oxygen-containing gas allows the outer shapes of cells 103A and 103B to be adjusted. Furthermore, the use of film ES protects insulating layer 521 from the effects of etching using an oxygen-containing gas. Furthermore, even if film ES is conductive, the formation of gap ESAB prevents conduction between electrode 551A and electrode 551B. Consequently, a novel method for manufacturing a display device can be provided that is convenient, practical, and reliable.

[0212] Implementation 3 In this embodiment, referring to Figures 25A to 38 A description will be given of structural examples of a display module and a display device that can be used as a display device according to one embodiment of the present invention.

[0213] The display device of this embodiment can be a high-definition display device. Therefore, for example, the display device of this embodiment can be used as the display portion of watch-type and bracelet-type information terminal devices (wearable devices), as well as the display portion of wearable devices such as head-mounted displays (HMDs) for VR devices and glasses-type AR devices that can be worn on the head.

[0214] The display device of this embodiment mode can be a high-resolution display device or a large display device. Therefore, for example, the display device of this embodiment mode can be used as a display portion of electronic devices with large screens, such as televisions, desktop or notebook computers, monitors for computers, digital signage, large-scale game consoles such as pinball machines, etc.; digital cameras; digital video cameras; digital photo frames; mobile phones; portable game consoles; portable information terminals; and audio reproduction devices.

[0215] [Display module] Figure 25A 2 is a perspective view of the display module 280. The display module 280 includes a display device 700A and an FPC 290. Note that the display module 280 may use any of the display devices 700B to 700F described later, for example, instead of the display device 700A.

[0216] [Example 1 of Display Device 700] The display device 700A includes a substrate 291 and a substrate 292 . The display device 700A includes a display portion 281 . The display portion 281 is a region where an image is displayed. The display portion 281 also includes a pixel portion 284 .

[0217] Figure 25B A perspective view illustrating a portion of the structure of a display device 700A is shown. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on a substrate 291. Furthermore, a terminal portion 285 is provided outside the pixel portion 284 on the substrate 291. A wiring portion 286 is provided between the circuit portion 282 and the terminal portion 285. The wiring portion 286 includes a plurality of wirings and connects the terminal portion 285 to the circuit portion 282. The display device 700A is connected to an FPC 290 at the terminal portion 285.

[0218] The pixel portion 284 includes a plurality of pixels 284a arranged periodically. Figure 25B An enlarged view of one pixel 284a is shown on the right side of FIG. Pixel 284a includes a plurality of sub-pixels arranged in stripes.

[0219] The pixel circuit portion 283 includes a plurality of pixel circuits 283 a arranged periodically.

[0220] For example, the pixel circuit 283a may be configured to include at least one selection transistor, one current control transistor (driving transistor), and a capacitor. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to the source. This implements an active matrix display device.

[0221] The circuit unit 282 includes a circuit for driving each pixel circuit 283a of the pixel circuit unit 283. For example, it preferably includes one or both of a gate line driver circuit and a source line driver circuit. In addition, it may include at least one of a calculation circuit, a storage circuit, and a power supply circuit.

[0222] The FPC 290 is used as wiring for supplying video signals, power supply potential, etc. from the outside to the circuit portion 282. Alternatively, an integrated circuit (IC) may be mounted on the FPC 290.

[0223] The display device 700 can adopt a structure in which one or both of the pixel circuit portion 283 and the circuit portion 282 are overlapped on the lower side of the pixel portion 284, so that the display portion 281 can have an extremely high aperture ratio (effective display area ratio). For example, the aperture ratio of the display portion 281 can be greater than 40% and less than 100%, preferably greater than 50% and less than 95%, and more preferably greater than 60% and less than 95%. In addition, the pixels 284a can be arranged at an extremely high density, thereby making the display portion 281 have an extremely high definition. For example, the display portion 281 preferably has pixels 284a arranged with a definition of greater than 2000ppi, more preferably greater than 3000ppi, further preferably greater than 5000ppi, and even more preferably greater than 6000ppi and less than 20,000ppi or less than 30,000ppi.

[0224] This display device 700 has an extremely high-definition display portion 281, making it suitable for use in VR devices such as HMDs or glasses-type AR devices. For example, even when the display portion is magnified using a lens, individual pixels cannot be discerned, enabling highly immersive display. For example, it is suitable for electronic devices with relatively small display portions, such as watches and other wearable electronic devices.

[0225] [Example 2 of Display Device 700] Figure 26A 7 is a block diagram illustrating a display device according to one embodiment of the present invention. Display device 700 includes a pixel array 74, a circuit 75, and a circuit 76. Pixel array 74 includes pixels 40 arranged in columns and rows.

[0226] The pixel 40 may include a plurality of sub-pixels 71. The sub-pixels 71 have the function of emitting light for display. By making the light emitted by the sub-pixels 71 have colors such as R (red), G (green), and B (blue), color display can be achieved.

[0227] The sub-pixel 71 includes a light-emitting device that emits unpolarized visible light. As the light-emitting device, an EL element such as an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode) is preferably used. As the luminescent material contained in the EL element, there can be cited substances that emit fluorescence (fluorescent materials), substances that emit phosphorescence (phosphorescent materials), substances that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials), inorganic compounds (quantum dot materials, etc.). In addition, LEDs such as Micro LEDs can also be used as light-emitting devices.

[0228] Circuits 75 and 76 are driving circuits for driving sub-pixels 71. Circuit 75 can be used as a source driving circuit, and circuit 76 can be used as a gate driving circuit. For example, shift register circuits can be used as circuits 75 and 76.

[0229] Alternatively, the display device 700 may be divided into a plurality of regions vertically and horizontally, and pixels may be driven for each of the divided regions.

[0230] For example, Figure 26B As shown, circuits 75 and 76 may be separated and arranged below pixel array 74. In this case, display device 700 has a stacked structure of layers 77 and 78, with multiple circuits 75 and 76 provided in layer 77, and pixel array 74 provided in layer 78 so as to overlap with these circuits.

[0231] By dividing and configuring circuits 75 and 76, pixel array 74 can be driven by divided regions. For example, portions of pixel array 74 can be operated at different frame rates. Portions of pixel array 74 can also be displayed at different resolutions, thereby also supporting foveated rendering.

[0232] Furthermore, by placing the driver circuitry below the pixel array 74, wiring length and wiring capacitance can be shortened. This allows for a display device capable of high-speed operation and low power consumption. Furthermore, a narrow-frame display device 700 can be realized.

[0233] Notice, Figure 26B The arrangement and area of ​​circuits 75 and 76 shown are merely examples and may be modified as appropriate. Furthermore, portions of circuits 75 and 76 may be formed in the same layer as pixel array 74. Furthermore, layer 77 may also include circuits such as memory circuits, computing circuits, and communication circuits.

[0234] In this structure, for example, layer 77 may be provided on a single crystal silicon substrate, circuits 75 and 76 may be formed using transistors containing silicon in their channel formation regions (hereinafter, referred to as Si transistors), and pixel circuits included in pixel array 74 provided in layer 78 may be formed using transistors containing an oxide semiconductor in their channel formation regions (hereinafter, referred to as OS transistors). The OS transistors may be formed using thin films and stacked on the Si transistors.

[0235] In addition, if Figure 26CAs shown, a structure may also be adopted in which a layer 79 having an OS transistor is provided between layers 77 and 78. An OS transistor forming part of a pixel circuit included in pixel array 74 may be provided in layer 79. Alternatively, an OS transistor forming part of circuits 75 and 76 may be provided. Alternatively, an OS transistor forming part of a circuit such as a memory circuit, a calculation circuit, or a communication circuit that may be provided in layer 77 may be provided.

[0236] In addition, the shape of the display device 700 when viewed from above is not limited to a rectangle, and may also be Figure 26D Alternatively, it can be Figure 26E The octagon and other polygons shown.

[0237] The display device of this embodiment is a high-definition display device and is particularly suitable for use as a display portion of wearable devices that can be worn on the head, such as head-mounted displays (HMDs) for VR and glasses-type AR devices.

[0238] [Display device 700A] Figure 27 The display device 700A shown includes a substrate 301 , a light-emitting device F30R, a light-emitting device F30G, a light-emitting device F30B, a capacitor 240 , and a transistor 310 .

[0239] Substrate 301 is equivalent to Figure 25A and Figure 25B The substrate 291 in FIG.

[0240] Transistor 310 is a transistor having a channel formation region in substrate 301. As substrate 301, a semiconductor substrate such as a single crystal silicon substrate can be used, for example. Transistor 310 includes a portion of substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. Conductive layer 311 serves as a gate electrode. Insulating layer 313 is located between substrate 301 and conductive layer 311 and serves as a gate insulating layer. Low-resistance region 312 is a region in substrate 301 doped with impurities and serves as either a source or a drain. Insulating layer 314 covers the side surfaces of conductive layer 311.

[0241] An element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0242] The insulating layer 261 is provided to cover the transistor 310 , and the capacitor 240 is provided over the insulating layer 261 .

[0243] Capacitor 240 includes conductive layer 241, conductive layer 245, and insulating layer 243 therebetween. Conductive layer 241 serves as one electrode of capacitor 240, conductive layer 245 serves as the other electrode of capacitor 240, and insulating layer 243 serves as a dielectric of capacitor 240.

[0244] When the conductive layer 241 and the conductive layer 245 use a material with low light transmittance, light can be suppressed from entering the transistor 310. When the conductive layer 241 and the conductive layer 245 are also used as light shielding layers in addition to the light shielding layer F09, the variation of the electrical characteristics of the transistor 310 is suppressed, thereby realizing a display device with high reliability. In addition, it is more preferred that one or both of the conductive layer 241 and the conductive layer 245 have a region overlapping with the transistor 310 (especially the channel formation region). It is particularly preferred that the light shielding layer F09 has a low transmittance for the following light: light with energy greater than the band gap of the semiconductor material contained in the semiconductor layer of the transistor provided in the layer F01, that is, light with a short wavelength. As a result, the variation of the electrical characteristics of the transistor can be more effectively suppressed, thereby realizing a display device with higher reliability. For example, it is particularly preferred that when the band gap of the semiconductor material contained in the semiconductor layer is 3.1 eV, the light shielding layer F09 has a low transmittance for light with energy greater than 3.1 eV (wavelength of about 400 nm or less). For example, red, green, brown, and black resins have low transmittance to light with short wavelengths and are therefore particularly suitable for use in the light-shielding layer F09.

[0245] Conductive layer 241 is provided on insulating layer 261 and embedded in insulating layer 254. Conductive layer 241 is connected to one of the source and drain of transistor 310 via conductive layer 271 embedded in insulating layer 261. Conductive layer 271 functions as a plug. Insulating layer 243 is provided to cover conductive layer 241. Conductive layer 245 is provided in a region overlapping conductive layer 241 with insulating layer 243 interposed therebetween.

[0246] Furthermore, a conductive layer surrounding the outer surface of the display portion 281 (or pixel portion 284) is preferably provided in at least one of the layers of conductive layers included in layer F01. This conductive layer is also called a guard ring. Providing this conductive layer can prevent damage to components such as transistors and light-emitting devices caused by high voltages applied to these components due to ESD (electrostatic discharge) or charging during processes using plasma.

[0247] An insulating layer 253 is provided to cover capacitor 240. Conductive layers 249R, 249G, and 249B are provided on insulating layer 253. Conductive layers 249R, 249G, and 249B are used, for example, as wiring. Conductive layer 249R is connected to conductive layer 241 via a conductive layer 256 embedded in insulating layer 253. Conductive layer 256 functions as a plug. The same applies to conductive layers 249G and 249B.

[0248] An inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film is suitably used for the insulating layer 253. For example, one or more of a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, a silicon nitride film, and a silicon nitride oxide film can be suitably used as the insulating layer 253.

[0249] An insulating layer F88 is provided on insulating layer 253, conductive layers 249R, 249G, and 249B. A light shielding layer F09 is provided on insulating layer F88. An insulating layer F82 is provided on light shielding layer F09. Light emitting devices F30R, F30G, and F30B are provided on insulating layer F82.

[0250] Note that although Figure 27 In the illustrated structure, the light shielding layer F09 is provided between the conductive layers 249R, 249G, and 249B and the light emitting devices F30R, F30G, and F30B, but one embodiment of the present invention is not limited thereto.

[0251] exist Figure 27 In the embodiment, an insulating material is provided in the region between adjacent light emitting devices. Figure 27 In the embodiment, an insulating layer F25 and an insulating layer F27 on the insulating layer F25 are provided in this region. Mask layer F18R is located on layer F13R included in light-emitting device F30R, mask layer F18G is located on layer F13G included in light-emitting device F30G, and mask layer F18B is located on layer F13B included in light-emitting device F30B.

[0252] Pixel electrodes F11R, F11G, and F11B are connected to conductive layers 249R, 249G, and 249B via conductive layers F70R, F70G, and F70B embedded in light-shielding layer F09, insulating layer F82, and insulating layer F88. The top surface of insulating layer F82 is the same or substantially the same height as the top surfaces of conductive layers F70R, F70G, and F70B.

[0253] A protective layer F31 is provided on the light emitting device F30R, the light emitting device F30G and the light emitting device F30B. The substrate F20 is bonded to the protective layer F31 by a resin layer F22. The substrate F20 is equivalent to Figure 25A The substrate 292 in FIG.

[0254] Figure 28A and Figure 28B The example of the display device including the light emitting device F30R, the light emitting device F30G and the light receiving device F50 is shown. Although not shown in the figure, the display device also includes a light emitting device F30B. Figure 28B In the embodiment, the layers below the insulating layer 253 are omitted. Figure 28A and Figure 28B The display device 700A shown may be, for example, Figure 27 as well as Figures 29 to 34A Any of the structures in layer F01 shown.

[0255] The light-receiving device F50 includes a pixel electrode F11S, a conductive layer F35S on the pixel electrode F11S, a layer F13S on the conductive layer F35S, a common layer F14 on the layer F13S, and a common electrode F15 on the common layer F14. The conductive layer F35S can be formed by the same process as the conductive layers F35R, F35G, and F35B.

[0256] Conductive layer F70S is in contact with and connected to conductive layer 249S. Conductive layer 249S is used as, for example, wiring. Conductive layer 249S can be formed, for example, by the same process as conductive layer 249R, conductive layer 249G, and conductive layer 249B.

[0257] A pixel electrode F11S is provided on the insulating layer F82. The pixel electrode F11S has a region that contacts and is connected to the conductive layer F70S embedded in the light-shielding layer F09, the insulating layer F82, and the insulating layer F88. The conductive layer F70S contacts and is connected to the conductive layer 249S included in the layer F01. In other words, the conductive layer 249S is connected to the pixel electrode F11S via the conductive layer F70S. The conductive layer 249S functions as a transistor electrode, a capacitor electrode, or wiring.

[0258] like Figure 28B As shown, a lens array F33 may be provided in the display device. The lens array F33 may overlap with one or both of the light emitting device and the light receiving device.

[0259] Figure 28B The following example shows a lens array F33 disposed on a light-emitting device F30R, a light-emitting device F30G, and a light-receiving device F50 via a protective layer F31. By forming the lens array F33 directly on a substrate on which the light-emitting devices (and light-receiving devices) are formed, the alignment accuracy between the light-emitting devices or light-receiving devices and the lens array can be improved.

[0260] exist Figure 28BIn the embodiment, light emitted by the light emitting device is extracted to the outside of the display device through the lens array F33.

[0261] The lens array F33 can be provided on the substrate F20 and bonded to the protective layer F31 using the resin layer F22. By providing the lens array F33 on the substrate F20, the heating temperature in the step of forming the lens array F33 can be increased.

[0262] [Display device 700B] Figure 29 The display device 700B shown has a structure in which a transistor 310A and a transistor 310B are stacked, each of which forms a channel in a semiconductor substrate. Note that in the description of the display device described later, description of parts similar to those of the display device described previously may be omitted.

[0263] The display device 700B has a structure in which a substrate 301B provided with a transistor 310B, a capacitor 240, and a light-emitting device is bonded to a substrate 301A provided with a transistor 310A.

[0264] Here, an insulating layer 345 is preferably provided on the bottom surface of the substrate 301B. Furthermore, an insulating layer 346 is preferably provided on the insulating layer 261 provided on the substrate 301A. The insulating layers 345 and 346 function as protective layers and can suppress the diffusion of impurities into the substrates 301B and 301A. The inorganic insulating films that can be used for the protective layer F31 can be used as the insulating layers 345 and 346.

[0265] Substrate 301B is provided with plug 343 that penetrates substrate 301B and insulating layer 345. Here, insulating layer 344 is preferably provided to cover the side surfaces of plug 343. Insulating layer 344 serves as a protective layer and can suppress the diffusion of impurities into substrate 301B. As insulating layer 344, an inorganic insulating film that can be used for protective layer F31 can be used.

[0266] A conductive layer 342 is provided on the back surface (the surface opposite to the substrate F20) of the substrate 301B and below the insulating layer 345. The conductive layer 342 is preferably provided so as to be embedded in the insulating layer 335. Furthermore, the bottom surfaces of the conductive layer 342 and the insulating layer 335 are preferably flattened. The conductive layer 342 is in contact with and connected to the plug 343.

[0267] On the other hand, in the substrate 301A, a conductive layer 341 is provided over the insulating layer 346. The conductive layer 341 is preferably provided so as to be embedded in the insulating layer 336. Furthermore, the top surfaces of the conductive layer 341 and the insulating layer 336 are preferably planarized.

[0268] The substrate 301A and the substrate 301B are connected by bonding the conductive layer 341 and the conductive layer 342. Here, by improving the flatness of the surface formed by the conductive layer 342 and the insulating layer 335 and the surface formed by the conductive layer 341 and the insulating layer 336, the conductive layer 341 and the conductive layer 342 can be well bonded.

[0269] Conductive layer 341 and conductive layer 342 are preferably made of the same conductive material. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film (titanium nitride film, molybdenum nitride film, tungsten nitride film) containing these elements can be used. Copper is particularly preferably used for conductive layer 341 and conductive layer 342. Therefore, Cu-Cu direct bonding technology (a technology that achieves electrical conduction by connecting Cu (copper) pads to each other) can be used.

[0270] [Display device 700C] Figure 30 The display device 700C shown has a structure in which a conductive layer 341 and a conductive layer 342 are bonded together via a bump 347 .

[0271] like Figure 30 As shown, by providing a bump 347 between conductive layer 341 and conductive layer 342, conductive layer 341 and conductive layer 342 can be connected. Bump 347 can be formed using a conductive material such as gold (Au), nickel (Ni), indium (In), or tin (Sn). Alternatively, solder may be used as bump 347. Furthermore, an adhesive layer 348 may be provided between insulating layer 345 and insulating layer 346. Furthermore, when providing bump 347, insulating layer 335 and insulating layer 336 may not be provided.

[0272] [Display device 700D] Figure 31 The main difference between the display device 700D shown and the display device 700A lies in the structure of the transistors.

[0273] The transistor 320 is an OS transistor using an oxide semiconductor in a semiconductor layer forming a channel.

[0274] The transistor 320 includes a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .

[0275] Substrate 331 is equivalent to Figure 25A and Figure 25B The substrate 291 in the embodiment. As the substrate 331, an insulating substrate or a semiconductor substrate can be used.

[0276] An insulating layer 332 is provided over the substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities (for example, water and hydrogen) from diffusing from the substrate 331 to the transistor 320 and prevents oxygen from being released from the semiconductor layer 321 toward the insulating layer 332. For example, a film into which hydrogen and oxygen are less likely to diffuse than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film, can be used as the insulating layer 332.

[0277] A conductive layer 327 is provided over the insulating layer 332, and an insulating layer 326 is provided to cover the conductive layer 327. The conductive layer 327 serves as the first gate electrode of the transistor 320, and a portion of the insulating layer 326 serves as a first gate insulating layer. An oxide insulating film such as a silicon oxide film is preferably used for at least the portion of the insulating layer 326 that contacts the semiconductor layer 321. The top surface of the insulating layer 326 is preferably planarized.

[0278] The semiconductor layer 321 is provided on the insulating layer 326. The semiconductor layer 321 preferably includes an oxide semiconductor film. A pair of conductive layers 325 are in contact with the semiconductor layer 321 and function as a source electrode and a drain electrode.

[0279] An insulating layer 328 is provided to cover the top and side surfaces of the pair of conductive layers 325 and the side surfaces of the semiconductor layer 321, and the insulating layer 264 is provided on the insulating layer 328. The insulating layer 328 serves as a barrier layer that prevents impurities (for example, water and hydrogen) from diffusing from the insulating layer 264 and the like into the semiconductor layer 321 and oxygen from being released from the semiconductor layer 321. As the insulating layer 328, an insulating film similar to the insulating layer 332 described above can be used.

[0280] Insulating layer 328 and insulating layer 264 have openings that reach semiconductor layer 321. Insulating layer 323 and conductive layer 324 are embedded in these openings, contacting the side surfaces of insulating layer 264, insulating layer 328, and conductive layer 325, and the top surface of semiconductor layer 321. Conductive layer 324 serves as a second gate electrode, and insulating layer 323 serves as a second gate insulating layer.

[0281] The top surfaces of the conductive layer 324 , the insulating layer 323 , and the insulating layer 264 are planarized so that their heights are uniform or substantially uniform, and the insulating layer 329 and the insulating layer 265 are provided to cover them.

[0282] The insulating layer 264 and the insulating layer 265 function as interlayer insulating layers. The insulating layer 329 functions as a barrier layer for preventing impurities (for example, water and hydrogen) from diffusing from the insulating layer 265 and the like into the transistor 320. The insulating layer 329 can be an insulating film similar to the insulating layer 328 and the insulating layer 332 described above.

[0283] Plug 274, connected to one of the pair of conductive layers 325, is provided so as to be embedded in insulating layer 265, insulating layer 329, and insulating layer 264. Plug 274 preferably includes a conductive layer 274a that covers the side surfaces of the openings in insulating layers 265, 329, 264, and 328 and a portion of the top surface of conductive layer 325, and a conductive layer 274b that contacts the top surface of conductive layer 274a. A conductive material that is not easily diffused by hydrogen and oxygen is preferably used for conductive layer 274a.

[0284] [Display device 700E] Figure 32 The display device 700E shown has a structure in which a transistor 320A and a transistor 320B, each of which includes an oxide semiconductor in a semiconductor forming a channel, are stacked.

[0285] The structures of the transistor 320A, the transistor 320B and their vicinities can refer to the description of the display device 700D described above.

[0286] Note that although two transistors including oxide semiconductors are stacked here, the present invention is not limited to this structure and may have a structure in which three or more transistors are stacked.

[0287] [Display device 700F] exist Figure 33 In the display device 700F shown, a transistor 310 having a channel formed in a substrate 301 and a transistor 320 having a semiconductor layer including an oxide semiconductor and forming a channel are stacked.

[0288] An insulating layer 261 is provided to cover transistor 310, and a conductive layer 251 is provided over insulating layer 261. Furthermore, an insulating layer 262 is provided to cover conductive layer 251, and conductive layer 252 is provided over insulating layer 262. Both conductive layer 251 and conductive layer 252 function as wiring. Furthermore, an insulating layer 263 and an insulating layer 332 are provided to cover conductive layer 252, and transistor 320 is provided over insulating layer 332. Furthermore, an insulating layer 265 is provided to cover transistor 320, and capacitor 240 is provided over insulating layer 265. Capacitor 240 is connected to transistor 320 via plug 274.

[0289] Transistor 320 can be used as a transistor constituting a pixel circuit. Furthermore, transistor 310 can be used as a transistor constituting a pixel circuit or a transistor constituting a driver circuit (gate line driver circuit, source line driver circuit) for driving the pixel circuit. Furthermore, transistors 310 and 320 can be used as transistors constituting various circuits such as arithmetic circuits and memory circuits.

[0290] With this structure, not only the pixel circuit but also the driver circuit can be formed directly under the light-emitting device, so the display device can be miniaturized compared to the case where the driver circuit is provided around the display area.

[0291] Figure 34A Shown with Figure 33 Examples of different structures. Figure 34A The display device 700F shown has a structure in which a transistor 310 and a transistor 320V are stacked, each having a channel formed in a substrate 301 .

[0292] Figure 34B An enlarged view of transistor 320V is shown. Figure 34C Shown along Figure 34B A cross-sectional view along the dot-dash line A1-A2 in FIG.

[0293] Transistor 320V includes a conductive layer 327 serving as a first gate electrode, an insulating layer 326 serving as a first gate insulating layer, a semiconductor layer 321, a conductive layer 325a, and a conductive layer 325b. Conductive layer 325a serves as one of a source electrode and a drain electrode, and conductive layer 325b serves as the other of the source electrode and the drain electrode. Semiconductor layer 321 can be formed of, for example, an oxide semiconductor.

[0294] Conductive layer 325a is provided on insulating layer 332, insulating layer 267 is provided on conductive layer 325a, and conductive layer 325b is provided on insulating layer 267. Conductive layer 325b and insulating layer 267 include an opening 490 that reaches conductive layer 325a. Semiconductor layer 321 is provided so as to cover opening 490 and is in contact with conductive layer 325a at opening 490. Semiconductor layer 321 is in contact with the side surfaces of insulating layer 267 and the side surfaces of conductive layer 325b. Preferably, semiconductor layer 321 is in contact with not only the side surfaces of conductive layer 325b but also the top surface of conductive layer 325b. The region of semiconductor layer 321 in contact with conductive layer 325a serves as one of the source and drain regions, while the region in contact with conductive layer 325b serves as the other of the source and drain regions. In semiconductor layer 321, a channel formation region is located between the source and drain regions. An insulating layer 326 is provided on the semiconductor layer 321, and a conductive layer 327 is provided on the insulating layer 326. The conductive layer 327 has a region overlapping with the semiconductor layer 321 via the insulating layer 326 in the opening.

[0295] An inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film is suitably used for the insulating layer 267. For example, one or more of a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, a silicon nitride film, and a silicon nitride oxide film can be suitably used as the insulating layer 267.

[0296] In transistor 320V, the source electrode and drain electrode are located at different heights relative to the surface on which they are formed (here, the top surface of insulating layer 332), and the drain current flows in a direction perpendicular or approximately perpendicular to the top surface of insulating layer 332. In other words, the channel length direction can be said to have a height (vertical) component, so transistor 320V can be called a VFET (Vertical Field Effect Transistor), a vertical transistor, a vertical channel transistor, or a vertical channel-type transistor.

[0297] The channel length L of transistor 320V can be controlled by the thickness of the insulating layer (here, insulating layer 267) sandwiched between the source electrode and the drain electrode. Therefore, transistor 320V can be manufactured with high precision to have a channel length L that is smaller than the minimum dimension of exposure by an exposure device used when manufacturing the transistor (e.g., less than 60 nm, less than 50 nm, less than 40 nm, less than 30 nm, less than 20 nm, or less than 10 nm and greater than 1 nm or greater than 5 nm). By shortening the channel length L of transistor 320V, the on-state current can be increased. This makes it possible to realize a display device that operates at high speed.

[0298] The source electrode, semiconductor layer, and drain electrode of transistor 320V can be arranged so as to overlap one another. Therefore, compared to so-called planar transistors, which are arranged in a planar shape, the occupied area can be significantly reduced. By using VFETs in pixel circuits of display devices, the occupied area of ​​the pixel circuits can be reduced, thereby realizing high-definition display devices.

[0299] like Figure 34C As shown, by forming the opening 490 in a circular or substantially circular shape in a plan view, the semiconductor layer 321, the insulating layer 326, and the conductive layer 327 are arranged concentrically. Therefore, the distance between the conductive layer 327 and the semiconductor layer 321 is substantially uniform, so that a substantially uniform gate electric field can be applied to the semiconductor layer 321.

[0300] The side surface of the conductive layer 327 is opposite to the side surface of the semiconductor layer 321 via the insulating layer 326. In other words, the entire periphery of the semiconductor layer 321 becomes a channel formation region when viewed from above. At this time, for example, the channel width W of the transistor 320V is determined by the length of the outer periphery of the semiconductor layer 321. In other words, the channel width W of the transistor 320V can be determined by the maximum width of the opening 490 (the maximum diameter when the opening 490 is circular when viewed from above). Figure 34B and Figure 34C In FIG, the double-headed solid arrow indicates the maximum width D of the opening 490. Figure 34CIn FIG, a double-dot chain arrow indicates the channel width W of the transistor 320V. By increasing the maximum width D of the opening 490, the channel width per unit area can be increased, thereby increasing the on-state current.

[0301] When the opening 490 is formed using photolithography, the maximum width D of the opening 490 is greater than or equal to the minimum dimension of the exposure device. Furthermore, the maximum width D of the opening 490 is set according to the thicknesses of the semiconductor layer 321, the insulating layer 326, and the conductive layer 327 provided in the opening 490. The maximum width D of the opening 490 is preferably, for example, greater than or equal to 5 nm, greater than or equal to 10 nm, or greater than or equal to 20 nm, and less than or equal to 100 nm, less than or equal to 60 nm, less than or equal to 50 nm, less than or equal to 40 nm, or less than or equal to 30 nm. Note that when the opening 490 is circular in plan view, the maximum width D of the opening 490 corresponds to the diameter of the opening 490, and the channel width W can be calculated as "D×π."

[0302] Note that the structure of the transistor 320V shown here can also be applied to other structural examples.

[0303] [Display device 700G] Figure 35 A perspective view showing a display device 700G is shown. Figure 36A A cross-sectional view of a display device 700G is shown.

[0304] The display device 700G has a structure in which a substrate F52 and a substrate F51 are bonded together. Figure 35 In FIG, the substrate F52 is represented by a dotted line.

[0305] The display device 700G includes a display portion F62, a connection portion F40, a circuit F64, a wiring F65, and the like. Figure 35 FIG. 7 shows an example in which the integrated circuit F73 and the FPC 290 are mounted in the display device 700G. Figure 35 The structure shown is called a display module including a display device 700G, an IC (integrated circuit), and an FPC.

[0306] The connection portion F40 is provided outside the display portion F62. The connection portion F40 may be provided along one side or multiple sides of the display portion F62. The number of the connection portions F40 may be one or more. Figure 35 In the example shown, the connection portion F40 is provided so as to surround the four sides of the display portion. At the connection portion F40, the common electrode of the light-emitting device is connected to the conductive layer, and a potential can be supplied to the common electrode.

[0307] As the circuit F64, for example, a scanning line driver circuit can be used.

[0308] The wiring F65 has a function of supplying signals and power to the display portion F62 and the circuit F64. The signals and power are input to the wiring F65 from the outside through the FPC 290 or from the integrated circuit F73.

[0309] Figure 35 The following illustrates an example of an integrated circuit F73 provided on a substrate F51 using a COG (Chip on Glass) or COF (Chip on Film) method. For example, an IC including a scan line driver circuit or a signal line driver circuit can be used as the integrated circuit F73. Note that the display device 700G and the display module do not necessarily need to be provided with an IC. Alternatively, the IC can be mounted on an FPC using a COF method or the like.

[0310] Figure 36A An example of a cross section of the display device 700G including a portion of the region including the FPC 290 , a portion of the circuit F64 , a portion of the display portion F62 , a portion of the connection portion F40 , and a portion of the region including the end portion is shown.

[0311] Figure 36A Display device 700G shown includes transistor 201, transistor 205, light-emitting devices F30R, F30G, and F30B between substrates F51 and F52. Transistor 201 and transistor 205 are disposed on substrate F51. An insulating layer 215 is disposed between transistor 201 and transistor 205. A light-shielding layer F09 is disposed on insulating layer 215. An insulating layer F86 is disposed on light-shielding layer F09. Light-emitting devices F30R, F30G, and F30B are disposed on insulating layer F86.

[0312] exist Figure 36A In the embodiment, conductive layers F05R, F05G, F05B, and F05p are provided on insulating layer F86. Layers F07R, F07G, and F07B are provided on conductive layers F05R, F05G, and F05B. Pixel electrodes F11R, F11G, and F11B are provided so as to cover conductive layers F05R, F05G, F05B, F07R, F07G, and F07B. Furthermore, electrode F23 is provided on conductive layer F05p, and conductive layer F35p is provided on electrode F23.

[0313] Conductive layer F05B contacts conductive layer 222b included in transistor 205 through openings provided in insulating layer F86, light-shielding layer F09, insulating layer 215, and insulating layer 213, and is connected to conductive layer 222b. Pixel electrode F11B is connected to conductive layer 222b via conductive layer F05B. The same applies to pixel electrode F11R, conductive layer F05R, pixel electrode F11G, and conductive layer F05G, and therefore detailed descriptions are omitted.

[0314] In the display portion F62, a light-shielding layer F09 is provided over the transistor 205. In the circuit F64, a light-shielding layer F09 is provided over the transistor 201. Providing the light-shielding layer F09 in the display portion F62 and the circuit F64 prevents external light and light emitted from the light-emitting device from entering the transistors included in the display device, thereby suppressing light-induced fluctuations in the transistors' electrical characteristics. This allows for highly reliable pixel circuits and driver circuits, and ultimately, a highly reliable display device.

[0315] Part of the top surface and side surfaces of each of layers F13B, F13G, and F13R are covered by insulating layers F25 and F27. Mask layer F18B is located between layer F13B and insulating layer F25. Furthermore, mask layer F18G is located between layer F13G and insulating layer F25, and mask layer F18R is located between layer F13R and insulating layer F25. A common layer F14 is provided on layers F13B, F13G, F13R, insulating layer F25, and insulating layer F27, and a common electrode F15 is provided on common layer F14. Both common layer F14 and common electrode F15 are continuous films provided between multiple light-emitting devices.

[0316] A protective layer F31 is provided on the light emitting device F30R, the light emitting device F30G and the light emitting device F30B. The protective layer F31 is bonded to the substrate F52 via an adhesive layer F42. The substrate F52 is provided with a light shielding layer F17. The sealing of the light emitting device can adopt a solid sealing structure or a hollow sealing structure. Figure 36A In the embodiment, the space between substrate F52 and substrate F51 is filled with adhesive layer F42, i.e., a solid sealing structure is adopted. Alternatively, a hollow sealing structure can be adopted in which the space is filled with an inert gas (such as nitrogen or argon). In this case, adhesive layer F42 can also be provided so as not to overlap with the light-emitting device. Alternatively, a resin different from the resin provided in the frame-shaped adhesive layer F42 can be used to fill the space.

[0317] The protective layer F31 is provided at least within the display portion F62, preferably covering the entire display portion F62. The protective layer F31 is preferably provided to cover not only the display portion F62 but also the connection portion F40 and the circuit F64. Furthermore, the protective layer F31 is preferably provided to extend to the end of the display device 700G. Meanwhile, in order to connect the FPC 290 to the conductive layer F66, a portion of the connection portion 204 is not provided with the protective layer F31.

[0318] A connection portion 204 is provided in an area of ​​substrate F51 that does not overlap substrate F52. In connection portion 204, wiring F65 is connected to FPC 290 via conductive layer F05q, conductive layer F66, conductive layer F35q, and connection layer 242. Conductive layer F05q can be formed, for example, using the same process as conductive layers F05R, F05G, and F05B. Conductive layer F66 can be formed, for example, using the same process as pixel electrodes F11R, F11G, and F11B. Conductive layer F35q can be formed, for example, using the same process as conductive layers F35R, F35G, and F35B. Conductive layer F35q is exposed on the top surface of connection portion 204. Therefore, connection portion 204 can be connected to FPC 290 via connection layer 242.

[0319] For example, after depositing the protective layer F31 on the entire surface of the display device 700G, the region of the protective layer F31 overlapping with the conductive layer F35q is removed using a mask, thereby exposing the conductive layer F35q.

[0320] Here, a structure is shown in which no other layer (e.g., a layer equivalent to layer F07R) is provided between conductive layer F05q and conductive layer F66. This increases the contact area between conductive layer F05q and conductive layer F66, thereby reducing contact resistance. Alternatively, another layer (e.g., a layer equivalent to layer F07R) may be provided between conductive layer F05q and conductive layer F66.

[0321] In addition, a stacked structure of at least one organic layer and a conductive layer can be provided on the conductive layer F35q, and a protective layer F31 can be provided on the stacked structure. Furthermore, a laser or a sharp tool (such as a needle or a cutter) can be used to form a peeling starting point (the part where peeling starts) in the stacked structure, and the stacked structure and the protective layer F31 on the stacked structure can be selectively removed, thereby exposing the conductive layer F35q. For example, the protective layer F31 can be selectively removed by pressing an adhesive roller on the substrate F51 and rotating the roller to move it relative to the substrate F51. Alternatively, an adhesive tape can be attached to the substrate F51 for peeling. Since the adhesion between the organic layer and the conductive layer or the adhesion between the organic layers is low, separation occurs at the interface between the organic layer and the conductive layer or in the organic layer. Thus, the area of ​​the protective layer F31 that overlaps with the conductive layer F35q can be selectively removed. Note that when an organic layer or the like remains on the conductive layer F35q, the organic layer or the like can be removed using an organic solvent or the like.

[0322] As the organic layer, for example, at least one organic layer (a layer used as a light-emitting layer, a carrier blocking layer, a carrier transport layer, or a carrier injection layer) used in any of the layers F13B, F13G, and F13R can be used. The organic layer can be formed simultaneously with the deposition of any of the layers F13B, F13G, and F13R, or can be provided separately. The conductive layer can be formed using the same process and materials as the common electrode F15. For example, an ITO film is preferably formed as the common electrode F15 and the conductive layer. Note that when the common electrode F15 has a laminated structure, at least one of the layers constituting the common electrode F15 is provided as the conductive layer.

[0323] In order to prevent the protective layer F31 from being deposited on the conductive layer F35q, a mask may be used to cover the top surface of the conductive layer F35q. As the mask, for example, a metal mask (range metal mask) may be used, or an adhesive tape or film having adhesive or absorptive properties may be used. By forming the protective layer F31 with the mask in place and then removing the mask, the conductive layer F35q can be kept exposed even after the protective layer F31 is formed.

[0324] By using this method, a region where the protective layer F31 is not provided can be formed in the connection portion 204 , and the conductive layer F35 q and the FPC 290 can be connected to each other via the connection layer 242 in this region.

[0325] Note that while the conductive layer F66 and the conductive layer F35q are provided on the connection portion 204, one embodiment of the present invention is not limited thereto. The conductive layer F35q may not be provided on the connection portion 204. When the conductive layer F35q is not provided on the connection portion 204, a structure may be employed in which the conductive layer F66 is exposed on the top surface of the connection portion 204 and in contact with the connection layer 242.

[0326] The display device 700G adopts a top-emission structure. The light-emitting device emits light toward the substrate F52. The substrate F52 is preferably made of a material that is highly transparent to visible light. The pixel electrode is made of a material that reflects visible light, and the counter electrode (common electrode F15) is made of a material that transmits visible light.

[0327] The transistor 201 and the transistor 205 can be formed through the same process.

[0328] Insulating layer 211, insulating layer 213, insulating layer 215, light-shielding layer F09, and insulating layer F86 are sequentially provided on substrate F51. A portion of insulating layer 211 serves as the gate insulating layer for each transistor. A portion of insulating layer 213 serves as the gate insulating layer for each transistor. Insulating layer 215 is provided to cover the transistors. Light-shielding layer F09 is provided to cover the transistors to prevent light from entering the transistors. There are no particular restrictions on the number of gate insulating layers or insulating layers covering transistors, and one, two, or more may be provided.

[0329] Preferably, at least one of the insulating layers covering the transistor is made of a material that is less susceptible to diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. This structure effectively suppresses the diffusion of impurities from the outside into the transistor, thereby improving the reliability of the display device.

[0330] Inorganic insulating films are preferably used as the insulating layer 211, the insulating layer 213, and the insulating layer 215. Examples of the inorganic insulating film include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may be used. Two or more of the above insulating films may be stacked.

[0331] Transistor 201 and transistor 205 include a conductive layer 221 serving as a gate electrode; an insulating layer 211 serving as a gate insulating layer; conductive layers 222a and 222b serving as a source and drain electrode; a semiconductor layer 231; an insulating layer 213 serving as a gate insulating layer; and a conductive layer 223 serving as a gate electrode. Multiple layers formed by processing the same conductive film are indicated by the same hatching. Insulating layer 211 is located between conductive layer 221 and semiconductor layer 231. Insulating layer 213 is located between conductive layer 223 and semiconductor layer 231.

[0332] There are no particular limitations on the structure of the transistors included in the display device of this embodiment. For example, planar transistors, staggered transistors, or inversely staggered transistors may be used. Furthermore, the transistors may have a top-gate structure or a bottom-gate structure. Alternatively, gate electrodes may be provided above or below the semiconductor layer forming the channel.

[0333] Transistors 201 and 205 employ a structure in which a semiconductor layer forming a channel is sandwiched between two gates. The transistors can be driven by connecting the two gates and supplying the same signal to both gates. Alternatively, the threshold voltage of the transistors can be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving the other.

[0334] There are no particular restrictions on the crystallinity of the semiconductor material used for the transistor. Amorphous semiconductors, single crystal semiconductors, or semiconductors other than single crystal semiconductors with crystallinity (microcrystalline semiconductors, polycrystalline semiconductors, or semiconductors having a crystalline region in part thereof) can be used. Using a single crystal semiconductor or a crystalline semiconductor is preferred because it can suppress degradation of transistor characteristics.

[0335] The semiconductor layer of the transistor preferably includes an oxide semiconductor. That is, the display device of this embodiment preferably uses an OS transistor in which an oxide semiconductor is used for the channel formation region.

[0336] Examples of crystalline oxide semiconductors include CAAC (c-axis-aligned crystalline)-OS and nc (nanocrystalline)-OS.

[0337] Alternatively, a transistor using silicon for the channel formation region (Si transistor) can be used. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor containing low temperature polycrystalline silicon (LTPS (Low Temperature Poly Silicon)) in the semiconductor layer (hereinafter also referred to as an LTPS transistor) can be used. LTPS transistors have high field effect mobility and good frequency characteristics.

[0338] By using Si transistors such as LTPS transistors, circuits requiring high-frequency drive (e.g., source driver circuits) and the display unit can be formed on the same substrate. This simplifies the external circuitry incorporated into the display device, reducing component and installation costs.

[0339] Compared to transistors using amorphous silicon, OS transistors have significantly higher field-effect mobility. Furthermore, when an OS transistor is off, the source-drain leakage current (also known as off-state current) is extremely low, allowing the charge stored in the capacitor connected in series with the transistor to be retained for a long period of time. Furthermore, the use of OS transistors can reduce power consumption in display devices.

[0340] To increase the brightness of the light-emitting device included in a pixel circuit, the current flowing through the light-emitting device needs to be increased. To achieve this, the source-drain voltage of the driver transistor included in the pixel circuit needs to be increased. Because the source-drain withstand voltage of an OS transistor is higher than that of a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driver transistor included in the pixel circuit, the current flowing through the light-emitting device can be increased, thereby improving the brightness of the light-emitting device.

[0341] When operating in the saturation region, OS transistors can make changes in the source-drain current smaller than those of Si transistors in response to changes in the gate-source voltage. Therefore, by using OS transistors as driver transistors in pixel circuits, the current flowing between the source and drain can be precisely determined based on changes in the gate-source voltage, allowing the amount of current flowing through the light-emitting device to be controlled. This increases the number of grayscales in the pixel circuit.

[0342] Regarding the saturation of the current flowing through the transistor when operating in the saturation region, compared to Si transistors, OS transistors can allow a stable current (saturation current) to flow even when the source-drain voltage is gradually increased. Therefore, by using OS transistors as drive transistors, a stable current can flow through the light-emitting device even if, for example, the current-voltage characteristics of the light-emitting device are uneven. In other words, when the OS transistor operates in the saturation region, even if the source-drain voltage is increased, the source-drain current remains almost unchanged, thereby stabilizing the light emission brightness of the light-emitting device.

[0343] As described above, by using an OS transistor as a driving transistor included in a pixel circuit, it is possible to achieve "suppression of black blur," "increase in emission brightness," "multi-gradation," "suppression of unevenness in light-emitting devices," and the like.

[0344] As oxide semiconductors used for the semiconductor layer, for example, indium oxide, gallium oxide, and zinc oxide can be mentioned. The oxide semiconductor preferably contains at least indium or zinc. The oxide semiconductor preferably contains one or more selected from indium, element M, and zinc. Note that element M is a metal element or semimetal element with a high bond energy with oxygen, for example, a metal element or semimetal element with a higher bond energy with oxygen than indium. Specifically, as element M, aluminum, gallium, tin, yttrium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, zirconium, molybdenum, hafnium, tantalum, tungsten, lanthanum, cerium, neodymium, magnesium, calcium, strontium, barium, boron, silicon, germanium, and antimony can be mentioned. The element M contained in the oxide semiconductor is preferably any one or more of the above elements, more preferably one or more selected from gallium, aluminum, tin, and yttrium, and further preferably one or more selected from gallium, aluminum, and tin. These elements have high bond energy with oxygen, and their ionic radius is roughly the same as that of indium or zinc, so they are more preferred. In addition, since tin is tetravalent, it can increase carrier mobility, so it is more preferred. In this specification and the like, metal elements and semi-metal elements may be collectively referred to as "metal elements", and the "metal elements" described in this specification and the like may include semi-metal elements.

[0345] The semiconductor layer may be made of, for example, indium zinc oxide (also referred to as In-Zn oxide or IZO (registered trademark)), indium tin oxide (also referred to as In-Sn oxide or ITO), indium titanium oxide (In-Ti oxide), indium gallium oxide (In-Ga oxide), indium tungsten oxide (also referred to as In-W oxide or IWO), indium gallium aluminum oxide (In-Ga-Al oxide), indium gallium tin oxide (also referred to as In-Ga-Sn oxide or IGTO), gallium zinc oxide (also referred to as Ga-Zn oxide or GZO), aluminum zinc oxide (also referred to as Al- Zn oxide or AZO), indium aluminum zinc oxide (also recorded as In-Al-Zn oxide or IAZO), indium tin zinc oxide (also recorded as In-Sn-Zn oxide or ITZO (registered trademark)), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium zinc oxide (also recorded as In-Ga-Zn oxide or IGZO), indium gallium tin zinc oxide (also recorded as In-Ga-Sn-Zn oxide or IGZTO), indium gallium aluminum zinc oxide (also recorded as In-Ga-Al-Zn oxide, IGAZO, IGZAO or IAGZO), etc. Alternatively, indium tin oxide (also recorded as ITSO), gallium tin oxide (Ga-Sn oxide), aluminum tin oxide (Al-Sn oxide) and the like containing silicon can be used.

[0346] In addition, the oxide semiconductor may replace indium or contain, in addition to indium, one or more metal elements with a large periodic number in the periodic table. The greater the overlap of the orbits of the metal elements, the greater the tendency for carrier conduction in the oxide semiconductor. Therefore, by including a metal element with a large periodic number, the field effect mobility of the transistor can sometimes be improved. As metal elements with a large periodic number, metal elements belonging to the 5th period and metal elements belonging to the 6th period can be cited. As the metal element, specifically, yttrium, zirconium, silver, cadmium, tin, antimony, barium, lead, bismuth, lanthanum, cerium, praseodymium, neodymium, promethium, samarium and europium can be cited. Note that lanthanum, cerium, praseodymium, neodymium, promethium, samarium and europium are called light rare earth elements.

[0347] The ratio of the number of indium atoms to the total number of atoms of all metal elements in the oxide semiconductor can increase the field-effect mobility of the transistor and realize a transistor with a large on-state current.

[0348] In this specification, etc., the ratio of the number of indium atoms to the total number of atoms of all metal elements contained may be described as the indium content. The same applies to other metal elements. When multiple elements are included as element M, the sum of the ratios of the number of atoms of element M to the total number of atoms of all metal elements contained may be described as the element M content.

[0349] Increasing the zinc content in the oxide semiconductor increases the crystallinity of the oxide semiconductor, thereby suppressing the diffusion of impurities in the oxide semiconductor. This suppresses variations in the electrical characteristics of the transistor and improves reliability.

[0350] By increasing the content of element M in the oxide semiconductor, an oxide semiconductor with a large band gap can be realized. In addition, by suppressing the formation of oxygen vacancies (V O :Oxygen Vacancy), inhibiting the generation of oxygen vacancies (V O ) carrier generation, thereby suppressing the drift of the transistor's threshold voltage. This reduces the off-state current, enabling the realization of a normally-off transistor. Furthermore, a transistor with low off-state current can be realized. Furthermore, variations in the transistor's electrical characteristics are suppressed, improving reliability.

[0351] The electrical characteristics and reliability of a transistor vary depending on the composition of the oxide semiconductor used in the semiconductor layer. Therefore, by varying the composition of the oxide semiconductor according to the electrical characteristics and reliability required of the transistor, a semiconductor device with both excellent electrical characteristics and high reliability can be realized.

[0352] When the oxide semiconductor is an In-M-Zn oxide, the atomic number ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic number ratio of the element M. Examples of the atomic number ratio of the metal elements in such an In-M-Zn oxide include In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=2:1:3, In:M:Zn=3:1:1, In:M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4.1, In:M:Zn=5:1:3, In:M:Zn=5:1:6, In:M:Zn=5:1:7, and In:M:Zn=5:1:8. , In:M:Zn=5:1:9, In:M:Zn=6:1:6, In:M:Zn=10:1:1, In:M:Zn=10:1:3, In:M:Zn=10:1:4, In:M:Zn=10:1:6, In:M:Zn=10:1:7, In:M:Zn=10:1:8, In:M:Zn=5:2:5, In:M:Zn=10:1:10, In:M:Zn=20:1:10, In:M:Zn=40:1:10 and compositions nearby. In addition, the nearby composition includes a range of ±30% of the desired atomic number ratio. By increasing the atomic number ratio of indium in the oxide semiconductor, the on-state current or field-effect mobility of the transistor can be improved.

[0353] The atomic number ratio of In in the In-M-Zn oxide may also be smaller than the atomic number ratio of the element M. Examples of atomic number ratios of metal elements in such In-M-Zn oxides include In:M:Zn=1:3:2, In:M:Zn=1:3:3, In:M:Zn=1:3:4, In:M:Zn=1:3:6, and compositions near these. By increasing the atomic number ratio of M in the oxide semiconductor, oxygen vacancies (V O ) is generated.

[0354] Note that when a plurality of elements are included as the element M, the total of the atomic number ratios of these elements may be set as the atomic number ratio of the element M.

[0355] By using a material with a high indium content in the semiconductor layer, the on-state current and field-effect mobility of the transistor can be increased. In addition, the inclusion of element M can suppress oxygen vacancies (V O) is generated. The content of element M of the oxide semiconductor contained in the semiconductor layer is preferably 0.1% or more and 25% or less, more preferably 0.1% or more and 20% or less, further preferably 0.1% or more and 10% or less, further preferably 0.1% or more and 8% or less, further preferably 0.1% or more and 6% or less, further preferably 0.1% or more and 4% or less. Thus, a transistor with good electrical characteristics can be realized. For example, it is preferred to use an oxide semiconductor of In:M:Zn=40:1:10 and its vicinity. The element M is preferably any one or more of the above-mentioned elements, more preferably one or more selected from aluminum, gallium, tin and yttrium. Specifically, an oxide semiconductor of In:Sn:Zn=40:1:10 and its vicinity can be appropriately used. Alternatively, an oxide semiconductor of In:Al:Zn=40:1:10 and its vicinity can be appropriately used.

[0356] Here, when an oxide semiconductor with a polycrystalline structure is used as a semiconductor layer, the grain boundaries become recombination centers and carriers are captured, thereby sometimes reducing the on-state current of the transistor. In addition, when an oxide semiconductor with a polycrystalline structure is used as a semiconductor layer, sometimes the surface unevenness of the semiconductor layer becomes larger. As a result, sometimes the steps of the formed surface of the layer formed on the semiconductor layer become larger, and defects such as disconnection or voids occur in the layer. When an oxide semiconductor with a composition that easily becomes a polycrystalline structure is used as a semiconductor layer, it is preferably included. Elements that hinder crystallization can be used. Thus, the semiconductor layer can be prevented from becoming a polycrystalline structure, and a transistor with a large on-state current can be realized. In addition, the coverage of the layer formed on the semiconductor layer can be improved, thereby preventing defects such as disconnection or voids from occurring in the layer.

[0357] For example, compared with indium tin oxide (ITO), indium tin oxide (ITSO) containing silicon is not easy to form a polycrystalline structure, so it can be used for semiconductor layers. When using ITSO, the silicon content is preferably greater than 1% and less than 20%, more preferably greater than 3% and less than 20%, further preferably greater than 3% and less than 15%, and further preferably greater than 5% and less than 15%. Specifically, oxide semiconductors of In:Sn:Si=45:5:4, In:Sn:Si=95:5:8 and their vicinities can be appropriately used. When indium tin oxide (ITSO) containing silicon is used as a semiconductor layer, it is preferably crystalline. In addition, the semiconductor layer may have an amorphous region. In addition, the semiconductor layer may be amorphous.

[0358] An oxide semiconductor that does not contain element M in the semiconductor layer can be used. When the oxide semiconductor is an In-Zn oxide, examples of the atomic ratio of the metal elements include In:Zn=1:1, In:Zn=2:1, In:Zn=1:2, In:Zn=3:1, In:Zn=3:2, In:Zn=2:3, In:Zn=4:1, In:Zn=4:3, In:Zn=5:1, In:Zn=5:2, In:Zn=5:3, In:Zn=5:4, In:Zn=5:6, In:Zn=5:7, In:Zn=5:8, In:Zn=5:9, In:Zn=7:1, In:Zn=10:1, In:Zn=10:3, In:Zn=10:7, and compositions close thereto. Furthermore, the atomic ratio of In is more preferably equal to or greater than the atomic ratio of Zn. By increasing the atomic ratio of In in the oxide semiconductor, the on-state current and field-effect mobility of the transistor can be increased.

[0359] In the composition analysis of the semiconductor layer, for example, energy dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), inductively coupled plasma mass spectrometry (ICP-MS) or inductively coupled plasma atomic emission spectrometry (ICP-AES) can be used. Alternatively, a combination of multiple methods can be used for analysis. It is preferred to perform peak separation of the spectrum obtained by analysis to identify and quantify the elements. Note that elements with low content are sometimes affected by the accuracy of analysis, and the actual content is different from the content obtained by analysis. For example, when the content of element M is low, the content of element M obtained by analysis is sometimes lower than the actual content, and the content of element M is difficult to quantify or element M is less than the detection limit.

[0360] The oxide semiconductor can be formed appropriately using a sputtering method or an ALD method. As the ALD method, a thermal ALD method or a plasma enhanced atomic layer deposition (PEALD) method can be used. Note that when an oxide semiconductor is formed using a sputtering method, the composition of the oxide semiconductor after formation is sometimes different from the composition of the sputtering target. In particular, the zinc content of the oxide semiconductor after formation is sometimes reduced to about 50% of the zinc content of the sputtering target. Alternatively, an oxide semiconductor can also be formed using a PECVD method.

[0361] A crystalline oxide semiconductor is preferably used for the semiconductor layer. Examples of crystalline oxide semiconductor structures include CAAC (c-axis aligned crystal), polycrystalline, and nanocrystalline (nc) structures. Using a crystalline oxide semiconductor can reduce the defect state density in the semiconductor layer, thereby achieving a highly reliable semiconductor device.

[0362] CAAC-OS or nc-OS is preferably used for the semiconductor layer.

[0363] CAAC-OS has multiple layered crystals. The c-axis of these crystals is oriented in the normal direction of the surface on which they are formed. The semiconductor layer preferably has layered crystals parallel or approximately parallel to the surface on which they are formed. As a result, since the layered crystals of the semiconductor layer are formed parallel or approximately parallel to the channel length direction of the transistor, transistors with high on-state current can be realized.

[0364] Using a highly crystalline oxide semiconductor for the channel formation region can reduce the defect state density in the channel formation region. On the other hand, using a low-crystalline oxide semiconductor can realize a transistor capable of passing a large current.

[0365] The transistors included in the circuit F64 and the transistors included in the display portion F62 may have the same structure or different structures. The multiple transistors included in the circuit F64 may have the same structure or two or more different structures. Similarly, the multiple transistors included in the display portion F62 may have the same structure or two or more different structures.

[0366] All transistors included in the display portion F62 may be OS transistors, all transistors included in the display portion F62 may be Si transistors, some transistors included in the display portion F62 may be OS transistors and the remaining transistors may be Si transistors.

[0367] For example, by using both LTPS transistors and OS transistors in the display portion F62, a display device with low power consumption and high driving capability can be realized. Furthermore, a structure combining LTPS transistors and OS transistors is sometimes referred to as LTPO. A more preferred example is a structure in which an OS transistor is used as a transistor for controlling conduction / non-conduction between wirings, and an LTPS transistor is used as a transistor for controlling current flow.

[0368] For example, one of the transistors included in the display unit F62 is used as a transistor for controlling the current flowing through the light-emitting device, and can also be called a drive transistor. One of the source and drain electrodes of the drive transistor is connected to the pixel electrode of the light-emitting device. An LTPS transistor is preferably used as the drive transistor. Therefore, the current flowing through the light-emitting device in the pixel circuit can be increased.

[0369] On the other hand, another of the transistors included in the display unit F62 is used as a switch for controlling the selection / non-selection of the pixel, and may also be referred to as a selection transistor. The gate of the selection transistor is connected to the gate line, and one of the source and drain is connected to the source line (signal line). An OS transistor is preferably used as the selection transistor. Therefore, even if the frame rate is significantly reduced (for example, below 1fps), the grayscale of the pixel can be maintained, thereby reducing power consumption by stopping the driver when displaying a static image.

[0370] In this manner, the display device according to one embodiment of the present invention can achieve a high aperture ratio, high definition, high display quality, and low power consumption.

[0371] A display device according to one embodiment of the present invention has a structure including an OS transistor and a light-emitting device having an MML structure. By adopting this structure, the leakage current that can flow through the transistor and the leakage current that can flow between adjacent light-emitting devices (also called lateral leakage current, side leakage current, etc.) can be made extremely small. In addition, by adopting the above-mentioned structure, when an image is displayed on the display device, the viewer can observe any one or more of the image's sharpness, image sharpness, high color saturation, and high contrast. In addition, by adopting a structure in which the leakage current that can flow through the transistor and the lateral leakage current between the light-emitting devices are extremely small, a display can be performed with minimal light leakage (so-called black blur) that can occur when displaying black.

[0372] In particular, when the above-mentioned Side-by-Side (SBS) structure is adopted in the light-emitting device of the MML structure, the layer arranged between the light-emitting devices (for example, the organic layer commonly used by the light-emitting devices, also called the common layer) is disconnected, thereby enabling a display with no side leakage or very little side leakage.

[0373] It is preferable to provide a light shielding layer F17 on the substrate F51 side of the substrate F52. The light shielding layer F17 can be provided between adjacent light emitting devices, in the connection portion F40 and the circuit F64, etc. In addition, various optical components can be arranged outside the substrate F52.

[0374] The materials that can be used for the substrate F20 can be used for both the substrate F51 and the substrate F52.

[0375] The adhesive layer F42 can use a material that can be used for the resin layer F22.

[0376] As the connection layer 242 , an anisotropic conductive film (ACF), anisotropic conductive paste (ACP), or the like can be used.

[0377] Figures 36B to 36D Other structural examples of transistors are shown.

[0378] The transistor 209 and the transistor 210 include: a conductive layer 221 serving as a gate; an insulating layer 211 serving as a gate insulating layer; a semiconductor layer 231 having a channel formation region 231i and a pair of low-resistance regions 231n; a conductive layer 222a connected to one of the pair of low-resistance regions 231n; a conductive layer 222b connected to the other of the pair of low-resistance regions 231n; an insulating layer 225 serving as a gate insulating layer; a conductive layer 223 serving as a gate; and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i. An insulating layer 218 covering the transistors may also be provided.

[0379] Figure 36B The transistor 209 shown is an example in which an insulating layer 225 covers the top and side surfaces of a semiconductor layer 231. Conductive layers 222a and 222b are in contact with and connected to a low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215. One of the conductive layers 222a and 222b functions as a source, and the other functions as a drain.

[0380] On the other hand, Figure 36C In the transistor 210 shown in FIG. 1 , the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low resistance region 231n. For example, by processing the insulating layer 225 using the conductive layer 223 as a mask, a Figure 36C The insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223. The conductive layers 222a and 222b are in contact with the low resistance region 231n through the openings provided in the insulating layer 215 and are connected to the low resistance region 231n.

[0381] Figure 36DThe insulating layer 225 of the transistor 209 shown has a region protruding from the conductive layer 223. Furthermore, the semiconductor layer 231 has a pair of regions 231L between the channel formation region 231i and the pair of low-resistance regions 231n. The regions 231L overlap with the insulating layer 225 and do not overlap with the conductive layer 223. The resistance of the regions 231L is approximately equal to or lower than the resistance of the channel formation region 231i. Furthermore, the resistance of the regions 231L is approximately equal to or higher than the resistance of the low-resistance regions 231n.

[0382] Region 231L serves as a buffer region to mitigate the drain electric field. Region 231L does not overlap with conductive layer 223, so even when a gate voltage is applied to conductive layer 223, a channel is hardly formed. Region 231L preferably has a higher carrier concentration than the channel formation region. This allows region 231L to function as an LDD (Lightly Doped Drain) region. The provision of an LDD region enables the realization of a transistor with a high drain withstand voltage.

[0383] Figure 36D The structure in which the conductive layer 222a and the conductive layer 222b serving as the source and drain and the conductive layer 223 serving as the gate are formed by the same process is shown. For example, the insulating layer 225 is formed on the semiconductor layer 231, and a conductive film is formed on the semiconductor layer 231 and the insulating layer 225. Then, the conductive layer 222a, the conductive layer 222b, and the conductive layer 223 can be formed by processing the conductive film. By forming the conductive layer 222a, the conductive layer 222b, and the conductive layer 223 by the same process, the process can be simplified. Note that in Figure 36D , the conductive layers 222a and 222b are hatched in the same manner as the conductive layer 223. An insulating layer 215 is provided over the conductive layers 222a, 222b, and 223.

[0384] Figures 37A to 37C Shown with Figures 36A to 36D Examples of different transistor structures are shown.

[0385] Figure 37A The following illustrates an example structure of a transistor 201V and a transistor 205V using a VFET. Each transistor 201V and 205V includes a conductive layer 221 serving as a gate electrode, an insulating layer 211 serving as a gate insulating layer, a semiconductor layer 231, a conductive layer 222a, and a conductive layer 222b. The conductive layer 222a serves as one of a source electrode and a drain electrode, while the conductive layer 222b serves as the other of the source electrode and the drain electrode.

[0386] An insulating layer F60 is provided on the conductive layer 222a, and a conductive layer 222b is provided on the insulating layer F60. The conductive layer 222b and the insulating layer F60 include an opening that reaches the conductive layer 222a. The semiconductor layer 231 is provided so as to cover the opening and is in contact with the conductive layer 222a within the opening. Furthermore, the semiconductor layer 231 is in contact with the side surfaces of the insulating layer F60 and the side surfaces of the conductive layer 222b. Preferably, the semiconductor layer 231 is in contact with not only the side surfaces of the conductive layer 222b but also the top surface of the conductive layer 222b. The region of the semiconductor layer 231 in contact with the conductive layer 222a serves as one of the source and drain regions, while the region in contact with the conductive layer 222b serves as the other of the source and drain regions. In the semiconductor layer 231, a channel formation region is located between the source and drain regions. An insulating layer 211 is provided on the semiconductor layer 231, and a conductive layer 221 is provided on the insulating layer 211. The conductive layer 221 has a region in the opening that overlaps with the semiconductor layer 231 via the insulating layer 211 .

[0387] The channel lengths of transistors 201V and 205V can be controlled by the thickness of the insulating layer (here, insulating layer F60) sandwiched between the source and drain electrodes. Consequently, transistors 201V and 205V can be manufactured with high precision, each having a channel length smaller than the minimum exposure dimension of an exposure device used in manufacturing the transistors. By shortening the channel lengths of transistors 201V and 205V, the on-state current can be increased. This allows for a high-speed display device.

[0388] By using VFETs in the pixel circuits of display devices, the area occupied by the pixel circuits can be reduced, thereby realizing high-definition display devices. Furthermore, by using VFETs in the driver circuits of display devices (for example, one or both of the gate line driver circuit and the source line driver circuit), the area occupied by the driver circuits can be reduced, thereby realizing display devices with narrow bezels.

[0389] The insulating layer F60 may have a stacked structure. Figure 37B A structural example is shown in which the insulating layer F60 includes an insulating layer F60a, an insulating layer F60b on the insulating layer F60a, and an insulating layer F60c on the insulating layer F60b.

[0390] At least the region of the semiconductor layer 231 in contact with the insulating layer F60b is used as a channel formation region of the transistor 206. The insulating layer F60b preferably releases oxygen by heating. This can reduce oxygen vacancies (V O ) and hydrogen enters the oxygen vacancy (V O ) (hereinafter also referred to as V OH). As the insulating layer F60b, an oxide insulating film is preferably used. As the insulating layer F60b, for example, a silicon oxide film or a silicon oxynitride film can be appropriately used.

[0391] The insulating layer F60a and the insulating layer F60c are used as barrier layers to prevent oxygen from being released from the insulating layer F60b to the insulating layer F60a side and the insulating layer F60c side, respectively. By sandwiching the insulating layer F60b between the insulating layer F60a and the insulating layer F60c, the amount of oxygen supplied from the insulating layer F60b to the channel formation region can be increased, thereby effectively reducing the oxygen vacancies (V O ) and V O H. Therefore, a transistor having good electrical characteristics and high reliability can be realized. The materials listed as the insulating layer 332 can be used for both the insulating layer F60a and the insulating layer F60c.

[0392] Figure 37C The transistor 208 shown includes an insulating layer 225 serving as a gate insulating layer and a conductive layer 223 serving as a gate. Figure 37C The following illustrates an example structure in which conductive layer 223 is located between insulating layer F60a and insulating layer F60b. Insulating layer F60, conductive layer 223, and conductive layer 222b include an opening that reaches conductive layer 222a. Insulating layer 225 is provided along the sidewalls of this opening. Semiconductor layer 231 is provided in contact with the top and side surfaces of insulating layer 225. Semiconductor layer 231 includes a region sandwiched between conductive layer 221 and conductive layer 223. This region is separated from conductive layer 221 by insulating layer 211 and separated from conductive layer 223 by insulating layer 225. Figure 37D and Figure 37E FIG2 shows an enlarged view of the insulating layer 225, the conductive layer 223 and their vicinity. Figure 37D and Figure 37E As shown, the insulating layer F60a has a region sandwiched between the insulating layer 225 and the conductive layer 222a. By providing the insulating layer F60a between the insulating layer 225 and the conductive layer 222a, it is possible to suppress the supply of oxygen from the insulating layer 225 to the conductive layer 222a. As a result, it is possible to suppress the oxidation of the conductive layer 222a and the increase in the resistance of the conductive layer 222a. In addition, as shown in FIG. Figure 37E As shown, the thickness of the region in contact with the bottom surface of the insulating layer 225 in the insulating layer F60a is sometimes smaller than the thickness of the region in contact with the bottom surface of the conductive layer 223. In this case, the insulating layer 225 has regions in contact with the top surface and side surfaces of the insulating layer F60a.

[0393] [Display device 700H] Figure 38 The display device 700H shown in the figure mainly differs from the display device 700G in that it includes a light receiving device F50.

[0394] The light receiving device F50 includes a pixel electrode F11S, a conductive layer F35S on the pixel electrode F11S, a layer F13S on the conductive layer F35S, a common layer F14 on the layer F13S, and a common electrode F15 on the common layer F14. The layer F13S includes at least an active layer.

[0395] Conductive layer F05S contacts conductive layer 222b included in transistor 205 through openings provided in insulating layer F86, light shielding layer F09, insulating layer 215, and insulating layer 213, and is connected to conductive layer 222b. Pixel electrode F11S is connected to conductive layer 222b through conductive layer F05S. Layer F07S is provided on conductive layer F05S, and pixel electrode F11S is provided so as to cover conductive layer F05S and layer F07S. Conductive layer F05S has a recessed portion at a position overlapping with the openings provided in insulating layer F86, light shielding layer F09, insulating layer 215, and insulating layer 213. This recessed portion is filled with layer F07S.

[0396] A portion of the top and side surfaces of layer F13S are covered by insulating layers F25 and F27. A mask layer F18S is located between layer F13S and insulating layer F25. A common layer F14 is provided on layers F13S, F25, and F27, and a common electrode F15 is provided on common layer F14. Common layer F14 is a continuous film provided between the light-receiving and light-emitting devices.

[0397] This embodiment mode can be combined with other embodiment modes as appropriate.

[0398] Implementation 4 In this embodiment, referring to Figures 39A to 41G An electronic device according to one embodiment of the present invention will be described.

[0399] The electronic device of this embodiment includes a display device according to one embodiment of the present invention in its display portion. The display device according to one embodiment of the present invention can easily achieve high definition and high resolution. Therefore, it can be used in the display portions of various electronic devices.

[0400] Examples of electronic devices include televisions, desktop or notebook computers, displays for computers, digital signage, large-scale game consoles such as pinball machines, and other electronic devices with relatively large screens, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals, and sound reproduction devices.

[0401] In particular, because the display device according to one embodiment of the present invention can improve clarity, it is suitable for electronic devices with smaller display units. Examples of such electronic devices include watch-type and bracelet-type information terminals (wearable devices), wearable devices that can be worn on the head, VR devices such as head-mounted displays, and glasses-type AR and MR devices.

[0402] The display device of one embodiment of the present invention preferably has an extremely high resolution such as HD (pixel number is 1280×720), FHD (pixel number is 1920×1080), WQHD (pixel number is 2560×1440), WQXGA (pixel number is 2560×1600), 4K (pixel number is 3840×2160), 8K (pixel number is 7680×4320), etc. In particular, it is preferably set to a resolution of 4K, 8K or above. In addition, the pixel density (clarity) of the display device of one embodiment of the present invention is preferably 100ppi or more, preferably 300ppi or more, more preferably 500ppi or more, further preferably 1000ppi or more, further preferably 2000ppi or more, further preferably 3000ppi or more, further preferably 5000ppi or more, further preferably 7000ppi or more. By using a display device with either or both high resolution and high definition, the sense of realism and depth can be further enhanced. Furthermore, there are no particular limitations on the screen ratio (aspect ratio) of the display device according to one embodiment of the present invention. For example, the display device can accommodate various screen ratios, such as 1:1 (square), 4:3, 16:9, and 16:10.

[0403] The electronic device of this embodiment may also include a sensor (the sensor has the function of sensing, detecting or measuring the following factors: force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, electricity, radiation, flow, humidity, tilt, vibration, smell or infrared).

[0404] The electronic device of this embodiment can have various functions. For example, it can have the following functions: the function of displaying various information (static images, dynamic images, text images, etc.) on the display unit; the function of using a touch panel; the function of displaying a calendar, date, or time; the function of executing various software (programs); the function of conducting wireless communications; the function of reading programs or data stored in a storage medium; etc.

[0405] use Figures 39A to 39DThis article describes an example of a wearable device that can be worn on the head. These wearable devices can display at least one of AR content, VR content, SR content, and MR content. Electronic devices that display at least one of AR, VR, SR, and MR content can enhance the user's sense of immersion.

[0406] Figure 39A The electronic device 8700A shown and Figure 39B The electronic device 8700B shown includes a pair of display panels 8751, a pair of frames 8721, a communication unit (not shown), a pair of mounting units 8723, a control unit (not shown), an imaging unit (not shown), a pair of optical components 8753, a glasses frame 8757, and a pair of nose pads 8758. Figure 39B Display panel 8751 is omitted.

[0407] The display device of one embodiment of the present invention can be applied to the display panel 8751. Therefore, an electronic device capable of performing extremely high-definition display can be realized.

[0408] Both electronic devices 8700A and 8700B can project the image displayed by display panel 8751 onto display area 8756 in optical member 8753. Because optical member 8753 is light-transmissive, the user can see the image displayed in the display area superimposed on the image transmitted through optical member 8753. Therefore, both electronic devices 8700A and 8700B are capable of AR display.

[0409] The electronic devices 8700A and 8700B may be provided with a camera capable of capturing images of the front as an imaging unit. Furthermore, by providing an acceleration sensor such as a gyroscope sensor in the electronic devices 8700A and 8700B, the user's head orientation may be detected and an image corresponding to that orientation may be displayed on the display area 8756.

[0410] The communication unit includes a wireless communication device, through which video signals, etc. can be supplied. Alternatively, the communication unit may include a connector to which a cable for supplying video signals and power supply potential can be connected, instead of or in addition to the wireless communication device.

[0411] Electronic device 8700A and electronic device 8700B are provided with a battery (not shown) and can be charged wirelessly, by wire, or both.

[0412] The housing 8721 may be provided with a touch sensor module. The touch sensor module has the function of detecting whether the outer surface of the housing 8721 is touched. The touch sensor module can detect user taps or slides and perform various operations. For example, a tap can temporarily pause or replay a moving image, while a slide can fast-forward or rewind. In addition, by providing a touch sensor module on each of the two housings 8721, the operating range can be expanded.

[0413] A variety of touch sensors can be used in the touch sensor module. For example, various touch sensors can be used, such as electrostatic capacitance, resistive film, infrared, electromagnetic induction, surface acoustic wave, and optical. In particular, electrostatic capacitance or optical sensors are preferably used in the touch sensor module.

[0414] When an optical touch sensor is used, a photoelectric conversion device (also called a photoelectric conversion element) can be used as a light-receiving device. The active layer of the photoelectric conversion device can use one or both of an inorganic semiconductor and an organic semiconductor.

[0415] Figure 39C The electronic device 8800A shown and Figure 39D The electronic device 8800B shown includes a pair of display portions 8820, a housing 8821, a communication portion 8822, a pair of mounting portions 8823, a control portion 8824, a pair of imaging portions 8825, and a pair of lenses 8832. Figure 39D The display unit 8820, the communication unit 8822 and the imaging unit 8825 are omitted.

[0416] The display unit 8820 can be applied to a display device according to one embodiment of the present invention. This makes it possible to realize an electronic device capable of displaying extremely high definition, thereby providing the user with a high sense of immersion.

[0417] The display portion 8820 is provided at a position inside the housing 8821 that can be viewed through the lens 8832. In addition, by displaying different images on each of the pair of display portions 8820, three-dimensional display utilizing parallax can be performed.

[0418] Both electronic device 8800A and electronic device 8800B can be referred to as VR-compatible electronic devices. A user wearing electronic device 8800A or electronic device 8800B can view an image displayed on display unit 8820 through lens 8832 .

[0419] Electronic devices 8800A and 8800B preferably include a mechanism that allows adjustment of the left and right positions of lens 8832 and display unit 8820 so that lens 8832 and display unit 8820 are optimally positioned according to the position of the user's eyes. Furthermore, they preferably include a mechanism that adjusts the focus by changing the distance between lens 8832 and display unit 8820.

[0420] The user can use the mounting portion 8823 to mount the electronic device 8800A or the electronic device 8800B on the head. Figure 39C In the embodiment of the present invention, the mounting portion 823 is shaped like the temple of glasses, but the present invention is not limited thereto. As long as the user can wear it, the mounting portion 8823 may have a helmet-type or belt-type shape.

[0421] The imaging unit 8825 has a function of acquiring external information. The data acquired by the imaging unit 8825 can be output to the display unit 8820. An image sensor can be used in the imaging unit 8825. In addition, multiple cameras can be provided to support various viewing angles such as telephoto and wide-angle.

[0422] Note that while the example shown here includes the imaging unit 8825, it is sufficient to provide a distance measuring sensor (hereinafter also referred to as a detection unit) that can measure the distance to the object. In other words, the imaging unit 8825 is one form of the detection unit. As the detection unit, for example, an image sensor or a distance image sensor such as a laser radar (LIDAR: Light Detection and Ranging) can be used. By using images obtained by the camera and images obtained by the distance image sensor, more information can be obtained, and more accurate gesture manipulation can be achieved.

[0423] Electronic device 8800A may also include a vibration mechanism for use as bone conduction headphones. For example, any one or more of the display unit 8820, housing 8821, and mounting unit 8823 may include such a vibration mechanism. This eliminates the need for separate headphones, earphones, or speakers; simply attaching electronic device 8800A allows for the enjoyment of video and audio.

[0424] Electronic devices 8800A and 8800B may both include input terminals. Cables for supplying video signals from a video output device or the like, power for charging batteries provided in the electronic devices, and the like may be connected to the input terminals.

[0425] An electronic device according to one embodiment of the present invention may also have a function of wirelessly communicating with an earphone 8750. The earphone 8750 includes a communication unit (not shown) and has a wireless communication function. The earphone 8750 can receive information (such as sound data) from the electronic device through the wireless communication function. For example, Figure 39A The electronic device 8700A shown has a function of transmitting information to the headset 8750 through a wireless communication function. In addition, for example Figure 39C The electronic device 8800A shown has a function of transmitting information to the headset 8750 through a wireless communication function.

[0426] The electronic device may include an earphone portion. Figure 39B The electronic device 8700B shown includes an earphone unit 8727. For example, a structure in which the earphone unit 8727 and the control unit are connected by wire can be adopted. A portion of the wiring connecting the earphone unit 8727 and the control unit can also be arranged inside the housing 8721 or the mounting portion 8723.

[0427] same, Figure 39D The electronic device 8800B shown includes an earphone unit 8827. For example, a structure in which the earphone unit 8827 and the control unit 8824 are connected by wire can be adopted. A portion of the wiring connecting the earphone unit 8827 and the control unit 8824 can also be arranged inside the frame 8821 or the mounting portion 8823. In addition, the earphone unit 8827 and the mounting portion 8823 can also include magnets. In this way, the earphone unit 8827 can be fixed to the mounting portion 8823 by magnetic force, which makes storage easier, which is preferable.

[0428] An electronic device may also include a sound output terminal that can be connected to earphones or headphones. Furthermore, an electronic device may include one or both of a sound input terminal and a sound input mechanism. For example, a microphone or other sound receiving device may be used as the sound input mechanism. By incorporating a sound input mechanism into an electronic device, the electronic device can function as a so-called headset.

[0429] As described above, the electronic device according to one embodiment of the present invention preferably uses both glasses-type devices (such as the electronic device 8700A and the electronic device 8700B) and goggles-type devices (such as the electronic device 8800A and the electronic device 8800B).

[0430] An electronic device according to one embodiment of the present invention can transmit information to a headset via a wired or wireless method.

[0431] Figure 40A The electronic device 6500 shown is a portable information terminal that can be used as a smartphone.

[0432] An electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display portion 6502 has a touch panel function.

[0433] The display device of one embodiment of the present invention can be applied to the display portion 6502 .

[0434] Figure 40B 6506 is a schematic cross-sectional view of an end portion of the housing 6501 on the microphone 6506 side.

[0435] A light-transmitting protective component 6510 is provided on the display surface side of the frame 6501, and a display panel 6511, an optical component 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the frame 6501 and the protective component 6510.

[0436] The display panel 6511 , the optical member 6512 , and the touch sensor panel 6513 are fixed to the protective member 6510 using an adhesive layer (not shown).

[0437] In a region outside the display portion 6502, a portion of the display panel 6511 is folded, and an FPC 6515 is connected to the folded portion. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on a printed circuit board 6517.

[0438] The display panel 6511 can use a display device according to one embodiment of the present invention. This allows for an extremely lightweight electronic device. Furthermore, because the display panel 6511 is extremely thin, a large-capacity battery 6518 can be installed while reducing the thickness of the electronic device. Furthermore, by folding a portion of the display panel 6511 to provide a connection to the FPC 6515 on the back side of the pixel unit, an electronic device with a narrow frame can be realized.

[0439] Figure 40C An example of a television set is shown. In a television set 7100, a display portion 7000 is incorporated into a housing 7101. Here, a structure in which the housing 7101 is supported by a stand 7103 is shown.

[0440] The display device according to one embodiment of the present invention can be applied to the display portion 7000 .

[0441] The operation can be performed by using the operation switch provided by the frame 7101 and the remote control unit 7111 provided separately. Figure 40CThe television set 7100 shown in FIG. Alternatively, the display portion 7000 may be provided with a touch sensor, allowing the television set 7100 to be operated by touching the display portion 7000 with a finger or the like. Furthermore, the remote control unit 7111 may be provided with a display unit that displays information output from the remote control unit 7111. Using the operation keys or touch panel provided on the remote control unit 7111, the channel and volume can be controlled, and the image displayed on the display portion 7000 can be manipulated.

[0442] The television set 7100 also includes a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, the modem can be connected to a wired or wireless communication network to enable one-way (from a sender to a receiver) or two-way (between a sender and a receiver, or between receivers) information communication.

[0443] Figure 40D The computer 7200 includes a housing 7211 , a keyboard 7212 , a pointing device 7213 , an external connection port 7214 , and the like. The display portion 7000 is incorporated into the housing 7211 .

[0444] The display device according to one embodiment of the present invention can be applied to the display portion 7000 .

[0445] Figure 40E and Figure 40F An example of digital signage is shown.

[0446] Figure 40E The digital signage 7300 shown includes a housing 7301, a display portion 7000, a speaker 7303, etc. In addition, it may include an LED light, operation keys (including a power switch or an operation switch), connection terminals, various sensors, a microphone, etc.

[0447] Figure 40F The digital signage 7400 is shown installed on a cylindrical pillar 7401. The digital signage 7400 includes a display unit 7000 installed along the curved surface of the pillar 7401.

[0448] exist Figure 40E and Figure 40F In the embodiment of the present invention, the display device of the display portion 7000 can be applied.

[0449] The larger the display unit 7000 is, the more information it can provide at one time. The larger the display unit 7000 is, the easier it is to attract people's attention, for example, it can improve the effectiveness of advertising.

[0450] Using a touch panel in the display unit 7000 is preferred because it allows not only still images or moving images to be displayed on the display unit 7000 but also intuitive operation by the user. Furthermore, when used to provide information such as route information or traffic information, intuitive operation can improve usability.

[0451] like Figure 40E and Figure 40F As shown, digital signage 7300 or digital signage 7400 can preferably be linked to information terminal device 7311 or information terminal device 7411, such as a smartphone, carried by the user via wireless communication. For example, advertising information displayed on display unit 7000 can be displayed on the screen of information terminal device 7311 or information terminal device 7411. In addition, the display of display unit 7000 can be switched by operating information terminal device 7311 or information terminal device 7411.

[0452] The game can be played on the digital signage 7300 or 7400 using the screen of the information terminal device 7311 or 7411 as an operation unit (controller). This allows an unspecified number of users to participate in the game and enjoy the game at the same time.

[0453] Figures 41A to 41G The electronic device shown includes a frame 9000, a display portion 9001, a speaker 9003, an operation key 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (the sensor has the function of sensing, detecting or measuring the following factors: force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, electricity, radiation, flow, humidity, inclination, vibration, smell or infrared), a microphone 9008, etc.

[0454] exist Figures 41A to 41G In the embodiment of the present invention, the display portion 9001 can be applied to a display device.

[0455] Figures 41A to 41GThe electronic device shown has various functions. For example, it may have the following functions: a function of displaying various information (static images, dynamic images, text images, etc.) on a display unit; a function of a touch panel; a function of displaying a calendar, date, or time, etc.; a function of controlling processing by using various software (programs); a function of performing wireless communication; a function of reading out programs or data stored in a storage medium and processing them; etc. Note that the functions of the electronic device are not limited to the above functions, but may have various functions. The electronic device may also have multiple display units. In addition, a camera or the like may be provided in the electronic device so that it has the following functions: a function of taking still images or dynamic images and storing the taken images in a storage medium (an external storage medium or a storage medium built into the camera); a function of displaying the taken images on a display unit; etc.

[0456] Below, the description Figures 41A to 41G Details of the electronic device shown.

[0457] Figure 41A 9101 is a perspective view showing a portable information terminal 9101. For example, the portable information terminal 9101 can be used as a smartphone. Note that a speaker 9003, a connection terminal 9006, a sensor 9007, etc. can also be provided in the portable information terminal 9101. In addition, as the portable information terminal 9101, text or image information can be displayed on multiple surfaces. Figure 41A shows an example of displaying three icons 9050. Furthermore, information 9051, indicated by a dotted rectangle, can be displayed on another surface of display portion 9001. Examples of information 9051 include information notifying of the receipt of an email, social media, or phone call; the title of the email or social media; the name of the sender of the email or social media; the date; the time; the remaining battery level; and the radio frequency strength. Alternatively, icon 9050 can be displayed in the location where information 9051 is displayed.

[0458] Figure 41B This is a perspective view of a portable information terminal 9102. Portable information terminal 9102 has the function of displaying information on three or more surfaces of display unit 9001. Here, an example is shown where information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, when portable information terminal 9102 is placed in a jacket pocket, the user can check information 9053 displayed in a position visible from above portable information terminal 9102. This allows the user to check this display without removing portable information terminal 9102 from their pocket, allowing them to decide whether to answer a call.

[0459] Figure 41CThis is a perspective view of a tablet terminal 9103. The tablet terminal 9103 can execute various application software, such as mobile phone use, reading and editing emails and articles, playing music, network communications, and computer games. The tablet terminal 9103 includes a display portion 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front of a housing 9000. Operation keys 9005 serving as buttons for operation are provided on the side surfaces of the housing 9000, and a connection terminal 9006 is provided on the bottom surface.

[0460] Figure 41D : is a perspective view showing a watch-type portable information terminal 9200. The portable information terminal 9200 can be used as a smart watch (registered trademark), for example. In addition, the display surface of the display portion 9001 is curved, and a display can be displayed along its curved display surface. In addition, the portable information terminal 9200 can communicate with a headset capable of wireless communication, for example, to make hands-free calls. In addition, by utilizing the connection terminal 9006, the portable information terminal 9200 can transmit data to other information terminals or charge. In addition, the charging operation can be performed using wireless power supply.

[0461] Figures 41E to 41G 1 is a perspective view showing a foldable portable information terminal 9201. Figure 41E This is a perspective view of the portable information terminal 9201 in an unfolded state. Figure 41G This is a three-dimensional diagram of the folded state. Figure 41F It is from Figure 41E Status and Figure 41G A perspective view of a state midway between transitioning from one state to another. The portable information terminal 9201 offers excellent portability when folded, while its large, seamless display area in the unfolded state provides enhanced viewing convenience. The display portion 9001 in the portable information terminal 9201 is supported by three frames 9000 connected by hinges 9055. The display portion 9001 can be bent, for example, within a radius of curvature of 0.1 mm or greater and 150 mm or less.

[0462] This embodiment mode can be combined with other embodiment modes as appropriate. Example 1

[0463] In this embodiment, referring to Figures 42A to 47 A workpiece WP manufactured using the method for manufacturing a display device according to one embodiment of the present invention will be described.

[0464] Figure 42A 1 is a perspective view illustrating the structure of the workpiece WP manufactured in this embodiment. Figure 42B It is an explanation Figure 42A In addition, Figure 42C It is along Figure 42BA cross-sectional view along the cut line P1-P2 is shown.

[0465] Figure 43 Graphs illustrating current density-luminance characteristics of the light-emitting device manufactured in this example.

[0466] Figure 44 1 is a graph illustrating the luminance-current efficiency characteristics of the light-emitting device manufactured in this example.

[0467] Figure 45 1 is a graph illustrating voltage-luminance characteristics of the light-emitting device manufactured in this example.

[0468] Figure 46 : is a graph illustrating the voltage-current density characteristics of the light-emitting device manufactured in this example.

[0469] Figure 47 It means 1000cd / m 2 FIG4 is a diagram of an emission spectrum when the light-emitting device manufactured in this embodiment emits light at a brightness of 0.054 %.

[0470] <Example 1 of Workpiece WP> The manufacturing workpiece WP described in this embodiment includes a set of pixels 703 (refer to Figure 42A ). A group of pixels 703 includes a light emitting device D1, a light emitting device D2 and a light emitting device D3 (refer to Figure 42B ). In addition, the workpiece WP includes a substrate 510 and a functional layer 520, and the functional layer 520 includes an insulating layer 521 (see Figure 42C ). A silicon substrate is used as the substrate 510, and silicon oxide is used as the insulating layer 521. Note that the workpiece WP does not include a pixel circuit and a driver circuit.

[0471] <<Structure of Light Emitting Device D1>> The light emitting device D1 has a rectangular shape with a width of 2.38 μm and a length of 6.83 μm on the front side (refer to Figure 42B The area of ​​the light emitting device D1 is about 16.26 μm 2 , the circumference is approximately 18.42μm.

[0472] In addition, the light emitting device D1 includes an electrode 551A, a layer 104A, a unit 103A, an intermediate layer 106A, a unit 103A2, a layer 105A, and an electrode 552A (see FIG. Figure 42C The electrode 551A is formed on the layer REFA, and the layer 573 is formed on the electrode 552A.

[0473] The layer REFA includes a 50 nm thick layer containing titanium, a 70 nm thick layer containing aluminum, and a 2 nm thick layer containing titanium. In addition, the electrode 551A includes ITSO.

[0474] Layer 104A comprises a hole-injecting material. Specifically, it includes N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (PCBBiF) and an electron-accepting material (OCHD-003) in a weight ratio of 1:0.03. The thickness is 10 nm. OCHD-003 contains fluorine and has a molecular weight of 672.

[0475] Both cell 103A and cell 103A2 include a layer with hole-transporting properties, a layer containing a light-emitting material, and a layer with electron-transporting properties. Both cell 103A and cell 103A2 emit blue light. Interlayer 106A supplies electrons to cell 103A and holes to cell 103A2. Layer 105A includes a material with electron-injecting properties.

[0476] <<Structure of Light Emitting Device D2>> The light emitting device D2 has a rectangular shape with a width of 3.36 μm and a length of 3.53 μm on the front side (refer to Figure 42B The area of ​​the light emitting device D2 is about 11.86 μm 2 , the circumference is approximately 13.78μm.

[0477] In addition, the light emitting device D2 includes an electrode 551B, a layer 104B, a unit 103B, an intermediate layer 106B, a unit 103B2, a layer 105B, and an electrode 552B (see FIG. Figure 42C Note that the electrode 551B is formed on the layer REFB and is arranged so as to sandwich a gap 551AB between the electrode 551A. In addition, a layer 573 is formed on the electrode 552B.

[0478] Layer REFB has the same structure as layer REFA, and electrode 551B is made of ITSO. Layer 104B is arranged with layer 104A with gap 104AB interposed therebetween. Layer 104B is made of the same material as layer 104A.

[0479] Both cell 103B and cell 103B2 include a layer with hole-transporting properties, a layer containing a light-emitting material, and a layer with electron-transporting properties. Both cell 103B and cell 103B2 emit green light. Interlayer 106B supplies electrons to cell 103B and holes to cell 103B2. Layer 105B contains a material with electron-injecting properties. Note that cell 103B is arranged with cell 103A to sandwich gap 103AB. Furthermore, interlayer 106B is arranged with interlayer 106A to sandwich gap 106AB.

[0480] <<Structure of Light Emitting Device D3>> The light emitting device D3 has a rectangular shape with a width of 3.36 μm and a length of 2.21 μm on the front side (refer to Figure 42B The area of ​​the light emitting device D3 is about 7.43 μm 2 , the circumference is approximately 11.14μm.

[0481] In addition, the light emitting device D3 includes an electrode 551C, a layer 104C, a unit 103C, an intermediate layer 106C, a unit 103C2, a layer 105C, and an electrode 552C (see FIG. Figure 42C Note that the electrode 551C is formed on the layer REFC and is arranged with a gap therebetween from the electrode 551B. In addition, a layer 573 is formed on the electrode 552C.

[0482] Layer REFC has the same structure as layer REFA, and electrode 551C is made of ITSO. Layer 104C is arranged with a gap between it and layer 104B. Layer 104C is made of the same material as layer 104A.

[0483] Both cell 103C and cell 103C2 include a layer with hole-transporting properties, a layer containing a light-emitting material, and a layer with electron-transporting properties. Both cell 103C and cell 103C2 emit red light. Interlayer 106C supplies electrons to cell 103C and holes to cell 103C2. Layer 105C includes a material with electron-injecting properties.

[0484] <<Operating Characteristics of Light-Emitting Devices D1, D2, and D3>> The light emitting device D1, the light emitting device D2 and the light emitting device D3 emit light when powered. The operating characteristics of the light emitting device D1, the light emitting device D2 and the light emitting device D3 are measured at room temperature (refer to Figures 43 to 47 Note that the luminance and emission spectrum were measured using a spectroradiometer (SR-UL1R manufactured by Topcon).

[0485] Light-emitting devices D1, D2, and D3 all exhibit excellent characteristics. For example, it is possible to suppress unnecessary current from flowing through light-emitting devices D1, D2, and D3 at voltages lower than the voltage at which light emission starts. Furthermore, it is possible to suppress current that does not contribute to light emission. Furthermore, it is possible to suppress current flowing through the sides of the light-emitting devices at voltages lower than the voltage at which light emission starts. Furthermore, it is possible to suppress current components that flow depending on the circumference of the light-emitting devices at voltages lower than the voltage at which light emission starts. Furthermore, at 1 cd / m 2 Above and 10000cd / m 2High current efficiency was achieved within the following range. Furthermore, good current density-voltage characteristics were observed, with current starting to flow within a range of 3 V to 5 V. Furthermore, an emission spectrum free of color mixing was obtained.

[0486] <Method for Manufacturing Workpiece WP> The workpiece WP is manufactured by the method described in Embodiment 2. The following is a supplementary explanation of the details.

[0487] In phase PH0, an insulating layer 521 is formed by CVD on a substrate 510. Specifically, a film containing silicon oxide is formed on a silicon substrate.

[0488] In Phase PH1, the first step is skipped. In the second step of Phase PH1, films that will later become the REFA, REFB, REFC, and REFE layers are formed on the insulating layer 521, and the conductive film 551 is also formed. Specifically, a 50 nm thick film containing titanium, a 70 nm thick film containing aluminum, a 2 nm thick film containing titanium, and a 10 nm thick film containing ITSO are sequentially stacked using sputtering. Then, the REFA, REFB, REFC, and REFE layers, electrodes 551A and 551B, gaps 551AB, electrodes 551C, and the conductive layer VCOM2 are formed. Specifically, photolithography is used.

[0489] The layer SCRE1 is not formed in the sixth step of the phase PH2A, and is formed when the layer SCRC1 is formed in the sixth step of the phase PH2C.

[0490] In the third step of phase PH3, the outer shapes of layers SCRA1, SCRB1, and SCRC1 are reduced using a photoresist PR and an etching method. Specifically, a film containing tungsten is used for layers SCRA1, SCRB1, SCRC1, and SCRE1, and a gas containing SF6 is used to etch layers SCRA1, SCRB1, SCRC1, and SCRE1. Separately, a film containing aluminum oxide is used for layers SCRA2, SCRB2, SCRC2, and SCRE2, and a gas containing CHF3, He, and CH4 is used to etch layers SCRA2, SCRB2, SCRC2, and SCRE2.

[0491] In the second step of stage PH5, conductive film 552 is formed using resistance heating. Specifically, a 15 nm thick film containing silver (Ag) and magnesium (Mg) is co-evaporated at a volume ratio of Ag:Mg = 1:0.1. Furthermore, in the third step of stage PH5, layer 573 is formed using sputtering. Specifically, a 70 nm thick film containing ITO is formed. Example 2

[0492] Figure 48 Is the description and Figure 42A The workpiece structures shown are top views of different workpiece structures.

[0493] Figure 49 Graphs illustrating current density-luminance characteristics of the light-emitting device manufactured in this example.

[0494] Figure 50 1 is a graph illustrating the luminance-current efficiency characteristics of the light-emitting device manufactured in this example.

[0495] Figure 51 1 is a graph illustrating voltage-luminance characteristics of the light-emitting device manufactured in this example.

[0496] Figure 52 : is a graph illustrating the voltage-current density characteristics of the light-emitting device manufactured in this example.

[0497] Figure 53 It means 1000cd / m 2 FIG4 is a diagram of an emission spectrum when the light-emitting device manufactured in this embodiment emits light at a brightness of 0.054 %.

[0498] Figure 54 : is a graph illustrating the voltage-current density characteristics of the light-emitting device manufactured in this example.

[0499] Figure 55 Graphs illustrating current density-current efficiency characteristics of the light-emitting device manufactured in this example.

[0500] Figure 56 Graphs illustrating current density-external quantum efficiency characteristics of the light-emitting device manufactured in this example.

[0501] Figure 57 This is a diagram illustrating the brightness-blue index characteristics of the light-emitting device manufactured in this embodiment. Note that the blue index (BI) is one of the indicators that represent the characteristics of a blue light-emitting device, and is the value of current efficiency (cd / A) divided by y chromaticity. Generally speaking, blue light with high color purity is useful for representing a wider color gamut. In addition, there is a tendency that the higher the color purity of blue light, the smaller the y chromaticity. Therefore, the value of current efficiency (cd / A) divided by y chromaticity is an indicator that represents the practicality of a blue light-emitting device. It can also be said that in order to realize a display device with both a wide color gamut and high efficiency, a blue light-emitting device with a high BI is preferred.

[0502] <Example 2 of Workpiece WP> The workpiece WP described in this embodiment includes a group of pixels 703. The group of pixels 703 includes a light emitting device D4, a light emitting device D5, and a light emitting device D6 (see FIG. Figure 48 Note that the pixel group 703 of the workpiece WP described in this embodiment is smaller than the pixel group 703 of the workpiece WP described in Example 1. Furthermore, the workpiece WP described in this embodiment includes the pixel group 703 at a resolution of 5009 ppi. The differences will be described in detail here, and the above description will be used for the same structures.

[0503] <<Structure of Light Emitting Device D4>> The light emitting device D4 has a rectangular shape with a width of 1.10 μm and a length of 3.98 μm on the front side (refer to Figure 48 The area of ​​the light emitting device D4 is about 4.38 μm 2 , the perimeter is about 10.16 μm. In addition, like the light emitting device D1, the light emitting device D4 includes two units that emit blue light.

[0504] <<Structure of Light Emitting Device D5>> The light emitting device D5 has a rectangular shape with a width of 1.79 μm and a length of 1.775 μm on the front side (refer to Figure 48 The area of ​​the light emitting device D5 is about 3.18 μm 2 , the perimeter is about 7.13 μm. In addition, like the light emitting device D2, the light emitting device D5 includes two units that emit green light.

[0505] <<Structure of Light Emitting Device D6>> The light emitting device D6 has a rectangular shape with a width of 1.79 μm and a length of 1.115 μm on the front side (refer to Figure 48 The area of ​​the light emitting device D6 is about 2.00 μm 2 , the perimeter is about 5.81 μm. In addition, like the light emitting device D3, the light emitting device D6 includes two units that emit red light.

[0506] <<Operating Characteristics of Light-Emitting Devices D4, D5, and D6>> The light emitting device D4, the light emitting device D5 and the light emitting device D6 emit light when powered. The operating characteristics of the light emitting device D4, the light emitting device D5 and the light emitting device D6 are measured at room temperature (refer to Figures 49 to 57 Note that the luminance and emission spectrum were measured using a spectroradiometer (SR-UL1R manufactured by Topcon).

[0507] Light emitting device D4, light emitting device D5 and light emitting device D6 all show good performance. Table 1 shows the typical operating characteristics. Note that at 10mA / cm 2 The blue index of the light-emitting device D4 is 145.1 (cd / A / y) at a current density of .

[0508] [Table 1]

[0509] For example, it is possible to suppress unnecessary current flowing through the light-emitting devices D4, D5, and D6 at a voltage lower than the voltage at which light emission starts. In addition, it is possible to suppress current that does not contribute to light emission. In addition, it is possible to suppress current flowing through the side of the light-emitting device at a voltage lower than the voltage at which light emission starts. In addition, it is possible to suppress current components that flow according to the circumference of the light-emitting device at a voltage lower than the voltage at which light emission starts. In addition, at 1 cd / m 2 Above and 10000cd / m 2 High current efficiency was achieved within the following range. Furthermore, good current density-voltage characteristics were observed, with current starting to flow within a range of 3 V to 5 V. Furthermore, an emission spectrum free of color mixing was obtained.

[0510] <Method for Manufacturing Workpiece WP> The workpiece WP is manufactured by the same method as that described in the second embodiment.

Claims

1. A method for manufacturing a display device, the method comprising: Phase 1; Phase II; Phase III; Stage 4; Stage 5; as well as The sixth stage, In the first stage, a first electrode, a second electrode and a first gap are formed on the insulating layer. The first gap is sandwiched between the first electrode and the second electrode, In the first step of the second stage, a first film is formed on the first electrode and the second electrode. In the second step of the second stage, a second film is formed on the first film, In the third step of the second stage, a third film is formed on the second film, In the fourth step of the second stage, a fourth film is formed on the third film. In the fifth step of the second stage, the fourth film is removed from above the second electrode by photolithography to form a first layer overlapping the first electrode. In the sixth step of the second stage, the second layer, the first unit, and the third layer are formed by removing the third film and the second film from above the second electrode using the etching method of the first layer. The second layer is sandwiched between the first layer and the first electrode, The first unit is sandwiched between the second layer and the first electrode, In the first step of the third stage, a fifth film is formed on the first layer and the second electrode. In the second step of the third stage, a sixth film is formed on the fifth film, In the third step of the third stage, a seventh film is formed on the sixth film. In the fourth step of the third stage, an eighth film is formed on the seventh film, In the fifth step of the third stage, the eighth film is removed from above the first layer by photolithography to form a fourth layer overlapping the second electrode. In the sixth step of the third stage, the seventh film and the sixth film are removed from above the first layer and the first gap by the etching method of the fourth layer to form a fifth layer, a second unit, a sixth layer, and a second gap. The fifth layer is sandwiched between the fourth layer and the second electrode, The second unit is sandwiched between the fifth layer and the second electrode, The second gap overlaps with the first gap, In the first step of the fourth stage, a photoresist is formed after forming the ninth film, In the second step of the fourth stage, a seventh layer and an eighth layer are formed by etching the photoresist. The seventh layer overlaps with the first electrode and has a smaller shape than the first layer, The eighth layer overlaps with the second electrode and has a smaller shape than the fourth layer, In the third step of the fourth stage, the outer shape of the first layer and the outer shape of the fourth layer are reduced by etching the seventh layer and the eighth layer. In the fourth step of the fourth stage, the outer shapes of the second layer, the fifth layer, the first unit, the second unit, the third layer, and the sixth layer are reduced by etching the first layer and the fourth layer. In the fifth step of the fourth stage, the first layer and the fourth layer are removed by etching. In the first step of the fifth stage, a ninth layer is formed, The ninth layer contacts the insulating layer at the first gap and covers the first unit and the second unit. In the second step of the fifth stage, a tenth layer is formed, The tenth layer fills the first gap and the second gap, The tenth layer includes a first opening portion overlapping with the first electrode and a second opening portion overlapping with the second electrode, In the third step of the fifth stage, the ninth layer and the second layer overlapping the first opening are removed by etching the tenth layer, and the ninth layer and the fifth layer overlapping the second opening are removed. In the first step of the sixth stage, an eleventh layer is formed on the first unit and the second unit. Furthermore, in the second step of the sixth stage, a conductive film is formed on the eleventh layer.

2. The method for manufacturing a display device according to claim 1, wherein in the first step of the first stage, a tenth film is formed on the insulating layer, In the second step of the first phase, the first electrode, the second electrode, and the first gap are formed on the tenth film. The first gap is sandwiched between the first electrode and the second electrode, In the fifth step of the fourth stage, the first layer, the fourth layer, and the tenth film are removed by etching to form a twelfth layer, a thirteenth layer, and a third gap. The twelfth layer is sandwiched between the first electrode and the insulating layer, The thirteenth layer is sandwiched between the second electrode and the insulating layer, And the third gap overlaps with the first gap.

3. A display device comprising: a first light emitting device; a second light emitting device; as well as Insulation layer, The first light emitting device comprises: a first electrode; a second electrode; Unit 1; and First floor, The second light emitting device comprises: a third electrode; a fourth electrode; Unit 2; and The second floor, Wherein, the first electrode is on the insulating layer, The first unit is sandwiched between the first electrode and the second electrode, The first unit comprises a first luminescent material, The first unit has a first side surface, The first layer is sandwiched between the first electrode and the first unit, The first layer is in contact with the first electrode, The first layer comprises a carrier injection material, The concentration of the carrier injection material in the first layer is higher than that in the first side surface, The third electrode is on the insulating layer, The third electrode is adjacent to the first electrode, The first gap is located between the third electrode and the first electrode, The second unit is sandwiched between the second layer and the fourth electrode, The second unit comprises a second luminescent material, The second gap is located between the second unit and the first unit, The second gap overlaps with the first gap, The second unit has a second side surface, The second side surface is opposite to the first side surface, The second layer is sandwiched between the third electrode and the second unit, The second layer is in contact with the third electrode, A third gap is located between the second layer and the first layer, The third gap overlaps with the first gap, The second layer comprises the carrier injection material, Furthermore, the concentration of the carrier injection material in the second layer is higher than that in the second side surface. 4 . The display device according to claim 3 , wherein an etching rate of the insulating layer is lower than that of the first unit in an etching process using an oxygen-containing gas.

5. The display device according to claim 3, further comprising: third floor; as well as The fourth floor, wherein the first electrode has a region sandwiched between the first layer and the third layer, The third electrode has a region sandwiched between the second layer and the fourth layer, The third layer has a region sandwiched between the first electrode and the insulating layer, In the etching process using the oxygen-containing gas, the etching rate of the third layer is lower than the etching rate of the first unit, The third layer is conductive, The fourth layer has a region sandwiched between the third electrode and the insulating layer, The fourth layer is adjacent to the third layer, The fourth gap is located between the fourth layer and the third layer, And the fourth layer includes the same material as the third layer.

6. The display device according to claim 3, further comprising: Fifth floor; sixth floor; as well as Conductive film, wherein the fifth layer overlaps the first gap, The fifth layer is in contact with the insulating layer, The fifth layer includes a first opening and a second opening, The first opening overlaps with the first electrode, The second opening overlaps with the third electrode, The sixth layer fills the first gap and the second gap, The sixth layer is sandwiched between the conductive film and the fifth layer, The sixth layer includes a third opening and a fourth opening, The third opening overlaps with the first electrode, The fourth opening overlaps with the third electrode, And the conductive film includes the second electrode and the fourth electrode.

7. A display module, comprising: The display device according to claim 3; as well as At least one of a connector and an integrated circuit.

8. An electronic device comprising: The display device according to claim 3; as well as At least one of a battery, a camera, a speaker, and a microphone.

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