Three-dimensional shape measurement method and system and computer readable storage medium

通过建立形貌数据库并利用灰度数据获取三维形貌,解决了传统工具成本高、速度慢的问题,实现了快速、低成本的三维形貌测量。

CN120576701APending Publication Date: 2025-09-02SIEN (QINGDAO) INTEGRATED CIRCUITS CO LTD
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Patent Information

Application Number
CN202510662223.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-05-21
Publication Date
2025-09-02

AI Technical Summary

Technical Problem

In the prior art, the cost of surface three-dimensional morphology measurement is high and the measurement speed is slow. Traditional tools such as transmission electron microscopes and atomic force microscopes are limited in applications in large-scale production.

Method used

Establish a morphology database, obtain the grayscale data of the membrane layer, and use the grayscale and height relationship to obtain the three-dimensional morphology, including using feature size scanning electron microscope to obtain the grayscale data, atomic force microscope and other tools to obtain the height data, and use function fitting to form the grayscale and height relationship.

Benefits of technology

简化了三维形貌的获取方法,提高了获取效率,降低了成本,实现了快速、低成本的三维形貌测量。

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention provides a three-dimensional shape measurement method and system and a computer readable storage medium, and the method comprises the steps: building a shape database which comprises the gray scale and height relation of at least one film layer, obtaining the gray scale data of a to-be-measured film layer, and deducing the height data of the to-be-measured film layer, thereby obtaining the three-dimensional shape of the to-be-measured film layer, and obtaining the three-dimensional shape of the to-be-measured film layer. The three-dimensional shape obtaining method is simplified, the three-dimensional shape obtaining efficiency is improved, and the three-dimensional shape obtaining cost is reduced.
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Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a three-dimensional shape measurement method, system and computer-readable storage medium. Background Art

[0002] Currently, the most commonly used tools for measuring three-dimensional (3D) surface topography are atomic force microscopy (AFM) or microtomy with transmission electron microscopy (TEM). While AFM offers high measurement speed and minimal damage to wafers, it has specific requirements for wafer surface topography and cannot accurately measure structures with high aspect ratios or locations larger than the tip. Microtomy with TEM offers accurate measurements and is the gold standard for assessing wafer 3D structure, but it also introduces irreversible damage and is expensive. With the rapid development of micro- and nanotechnology, the demand for precise measurement of material surface topography is increasing. While traditional surface topography measurement techniques such as transmission electron microscopy (TEM) and atomic force microscopy (AFM) offer high accuracy, their cost and speed limit their application in large-scale production. Therefore, the development of new, low-cost, and rapid measurement methods is crucial. Summary of the Invention

[0003] The object of the present invention is to provide a three-dimensional topography measurement method, system and computer-readable storage medium to solve the problems of high cost and slow measurement speed of surface three-dimensional topography measurement in the prior art.

[0004] In order to solve the above technical problems, the present invention provides a three-dimensional shape measurement method, which includes:

[0005] Establishing a morphology database, wherein the morphology database includes a grayscale and height relationship of at least one film layer;

[0006] Obtaining grayscale data of the film layer to be measured; and,

[0007] According to the grayscale data of the film layer to be measured and the relationship between the grayscale and the height of the film layer, the height data of the film layer to be measured is obtained to obtain the three-dimensional morphology of the film layer to be measured.

[0008] Optionally, in the three-dimensional topography measurement method, a topography database is established, wherein the topography database includes the grayscale and height relationship of at least one film layer, including:

[0009] Acquiring grayscale data and height data of at least one sample film layer; and,

[0010] A grayscale and height relationship of the film layer is formed according to the grayscale data and height data of the sample film layer.

[0011] Optionally, in the three-dimensional topography measurement method, after forming the grayscale and height relationship of the film layer according to the grayscale data and height data of the sample film layer, a topography database is established, wherein the topography database includes the grayscale and height relationship of at least one film layer and further includes:

[0012] Acquiring grayscale data and height data of at least one verification film layer; and,

[0013] The grayscale and height relationship of the film layer is corrected according to the grayscale data and height data of the verification film layer.

[0014] Optionally, in the three-dimensional topography measurement method, the grayscale data of the film layer to be measured is obtained by a characteristic size scanning electron microscope.

[0015] Optionally, in the three-dimensional topography measurement method, the grayscale data of the sample film layer is obtained by a characteristic size scanning electron microscope, and the height data of the sample film layer is obtained by an atomic force microscope, a scanning tunneling microscope or a transmission electron microscope.

[0016] Optionally, in the three-dimensional topography measurement method, the grayscale data of the verification film layer is obtained by a characteristic dimension scanning electron microscope, and the height data of the verification film layer is obtained by an atomic force microscope, a scanning tunneling microscope or a transmission electron microscope.

[0017] Optionally, in the three-dimensional topography measurement method, forming the grayscale and height relationship of the film layer according to the grayscale data and height data of the sample film layer includes:

[0018] The grayscale and height relationship of the film layer is formed by function fitting.

[0019] Optionally, in the three-dimensional topography measurement method, the grayscale and height relationship of the film layer is formed by function fitting, and the fitting function used includes: a linear function, a polynomial function or a differential integral function.

[0020] The present invention also provides a three-dimensional shape measurement system, comprising:

[0021] A morphology database, the morphology database including a grayscale and height relationship of at least one film layer;

[0022] a grayscale measurement unit, the grayscale measurement unit being used to obtain grayscale data of the film layer to be measured; and

[0023] A processing unit is used to obtain the height data of the film layer to be measured according to the grayscale data of the film layer to be measured and the relationship between the grayscale and height of the film layer, so as to obtain the three-dimensional morphology of the film layer to be measured.

[0024] The present invention also provides a computer-readable storage medium, which stores instructions. When the instructions are executed by a processor, the height data of the film layer to be measured is obtained based on the grayscale data of the film layer to be measured and the relationship between the grayscale and height of the film layer, so as to obtain the three-dimensional morphology of the film layer to be measured.

[0025] In the three-dimensional morphology measurement method, system and computer-readable storage medium provided by the present invention, a morphology database including the grayscale and height relationship of at least one film layer is established. Then, by obtaining the grayscale data of the film layer to be measured, the height data of the film layer to be measured can be deduced, thereby obtaining the three-dimensional morphology of the film layer to be measured, simplifying the method for obtaining the three-dimensional morphology, improving the efficiency of obtaining the three-dimensional morphology, and reducing the cost of obtaining the three-dimensional morphology. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 3D shape measurement method according to an embodiment of the present invention.

[0027] Figure 2 Schematic diagram of the TEM surface envelope according to an embodiment of the present invention.

[0028] Figure 3 Schematic diagram of a CD-SEM cross-section of an embodiment of the present invention.

[0029] Figure 4 3D shape measurement system according to an embodiment of the present invention.

[0030] The description of the accompanying drawings is as follows:

[0031] 100-morphology database; 110-grayscale measurement unit; 120-processing unit DETAILED DESCRIPTION

[0032] The following is a detailed description of the three-dimensional topography measurement method, system, and computer-readable storage medium proposed by the present invention, in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are highly simplified and not to exact scale, and are intended solely to facilitate and clearly illustrate the embodiments of the present invention.

[0033] The terminology used herein is for the purpose of describing specific embodiments only and is not intended to limit the invention. Unless otherwise defined herein, technical or scientific terms used herein shall have the same ordinary meaning as understood by persons of ordinary skill in the art to which the invention pertains. The terms "first," "second," and similar terms used in the specification and claims of the present invention do not denote any order, quantity, or importance, but are simply used to distinguish one component from another. Similarly, terms such as "a" or "an" do not denote a limitation of quantity, but rather denote the presence of at least one. "Multiple" or "several" refer to two or more components. Unless otherwise indicated, terms such as "upper / upper layer" and "lower / lower layer" are used for convenience only and are not intended to limit the invention to a specific location or spatial orientation. Terms such as "include" or "comprising" mean that the elements or objects preceding the term "include" or "comprising" include the elements or objects listed after the term and their equivalents, and do not exclude other elements or objects. Terms such as "connected" or "connected" are not limited to physical or mechanical connections and may include electrical connections, whether direct or indirect. As used in the present description and the appended claims, the singular forms "a," "an," "said," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and / or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.

[0034] Traditional surface topography measurement techniques, such as transmission electron microscopy (TEM) and atomic force microscopy (AFM), are expensive and slow. The inventors discovered that existing techniques can quickly and easily obtain the two-dimensional topography of a film layer, for example, by using grayscale data from pixel distribution. However, measuring the film's height significantly increases the measurement cost and difficulty, resulting in high measurement costs and slow measurement speeds.

[0035] Please refer to Figure 1 , an embodiment of the present application provides a three-dimensional shape measurement method, the three-dimensional shape measurement method comprising:

[0036] Step S10: establishing a morphology database, wherein the morphology database includes the grayscale and height relationship of at least one film layer;

[0037] Step S20: obtaining grayscale data of the film layer to be tested; and

[0038] Step S30: acquiring height data of the film layer to be measured according to the grayscale data of the film layer to be measured and the relationship between the grayscale and height of the film layer to obtain the three-dimensional morphology of the film layer to be measured.

[0039] In the three-dimensional morphology measurement method provided in the embodiment of the present application, a morphology database including the grayscale and height relationship of at least one film layer is established. Then, the height data of the film layer to be measured can be deduced by obtaining the grayscale data of the film layer to be measured, thereby obtaining the three-dimensional morphology of the film layer to be measured, which simplifies the method for obtaining the three-dimensional morphology, improves the efficiency of obtaining the three-dimensional morphology, and reduces the cost of obtaining the three-dimensional morphology.

[0040] In some embodiments of the present application, the morphology database includes the grayscale and height relationships of multiple film layers. For example, the morphology database includes the grayscale and height relationships of film layers formed by silicon material (Si), wherein the film layers formed by silicon material (Si) may also be in the form of wafers; for another example, the morphology database also includes the grayscale and height relationships of film layers formed by gallium nitride (GaN); the grayscale and height relationships of film layers formed by silicon carbide (SiC); the grayscale and height relationships of film layers formed by silicon oxide (SiO2); the grayscale and height relationships of film layers formed by silicon nitride (SiN), and so on. The grayscale and height relationships of film layers formed by different materials may be the same or different. For example, if the relationship between the grayscale and height of a film layer formed by one material is a polynomial function relationship, and the relationship between the grayscale and height of a film layer formed by another material is also a polynomial function relationship, and the coefficients of the two are the same, then the relationship between the grayscale and height of the film layers formed by the two materials is the same; for another example, if the relationship between the grayscale and height of a film layer formed by one material is a linear function relationship, and the relationship between the grayscale and height of a film layer formed by another material is also a linear function relationship, but the coefficients of the two are different, then the relationship between the grayscale and height of the film layers formed by the two materials is different.

[0041] In some embodiments of the present application, the grayscale-height relationship of a film layer can be established by the following method: obtaining grayscale data and height data of at least one sample film layer; and forming the grayscale-height relationship of the film layer based on the grayscale data and height data of the sample film layer. The sample film layer, i.e., the film layer serving as the sample, is made of silicon (Si), gallium nitride (GaN), silicon carbide (SiC), silicon oxide (SiO2), silicon nitride (SiN), etc., as described above. These typically include materials whose three-dimensional morphology is of particular interest.

[0042] In some embodiments of the present application, establishing the grayscale and height relationship of a film layer may further include: obtaining grayscale data and height data of at least one verification film layer; and correcting the grayscale and height relationship of the film layer based on the grayscale data and height data of the verification film layer. The verification film layer, i.e., the verification film layer, may be made of the aforementioned silicon (Si), gallium nitride (GaN), silicon carbide (SiC), silicon oxide (SiO2), silicon nitride (SiN), or the like. These materials typically include those whose three-dimensional morphology is of particular interest.

[0043] Wherein, the verification film layer corresponds to the sample film layer. For example, a sample film layer formed of silicon material is first used to obtain its grayscale data and height data, and the grayscale and height relationship of the film layer is formed according to the obtained grayscale data and height data of the sample film layer. In some embodiments of the present application, the grayscale and height relationship of the film layer formed according to the obtained grayscale data and height data of the sample film layer is the final grayscale and height relationship of the film layer formed of silicon material. In other embodiments of the present application, a verification film layer formed of silicon material is then used to obtain its grayscale data and height data, and then the grayscale and height relationship of the film layer is corrected according to the obtained grayscale data and height data of the verification film layer. At this time, the grayscale and height relationship of the film layer after correction is the final grayscale and height relationship of the film layer formed of silicon material.

[0044] In some embodiments of the present application, correcting the grayscale and height relationship of the film layer based on the grayscale data and height data of the verification film layer may, for example, include: substituting the obtained grayscale data and height data of the verification film layer into the grayscale and height relationship of the film layer formed according to the obtained grayscale data and height data of the sample film layer, and adjusting the coefficients in the grayscale and height relationship of the film layer according to the values ​​on both sides of the equation after substitution, so as to obtain a corrected grayscale and height relationship of the film layer.

[0045] In some embodiments of the present application, correcting the grayscale and height relationship of the film layer according to the grayscale data and height data of the verification film layer may include a correction amplitude of 0. For example, the obtained grayscale data and height data of the verification film layer are substituted into the grayscale and height relationship of the film layer formed according to the obtained grayscale data and height data of the sample film layer. After the substitution, the values ​​on both sides of the equation are equal or within a certain deviation range. Therefore, the coefficients in the grayscale and height relationship of the film layer do not need to be adjusted, that is, the correction amplitude is 0.

[0046] In other embodiments of the present application, after the grayscale and height relationship of the film layer is corrected according to the grayscale data and height data of the verification film layer, it may also include: obtaining the grayscale data and height data of the first verification film layer, and correcting the grayscale and height relationship of the film layer according to the obtained grayscale data and height data of the first verification film layer. Here, we continue to take the example of using silicon material to form the first verification film layer. That is, after the grayscale and height relationship of the film layer is corrected according to the obtained grayscale data and height data of the verification film layer, the grayscale and height relationship of the film layer is verified and corrected again using the grayscale data and height data of the first verification film layer. In some embodiments of the present application, the second verification film layer, the third verification film layer... can be used to verify and correct the grayscale and height relationship of the film layer multiple times until the correction amplitude is 0.

[0047] In some embodiments of the present application, grayscale data is acquired using a critical dimension scanning electron microscope (CD-SEM). This includes acquiring grayscale data of the sample film layer, the verification film layer, and / or the test film layer using a CD-SEM. CD-SEM can easily and quickly acquire grayscale data, thereby improving the efficiency of acquiring three-dimensional topography and reducing the cost of acquiring three-dimensional topography.

[0048] In some embodiments of the present application, height data of the sample film layer and / or the verification film layer is obtained by an atomic force microscope (AFM), a scanning tunneling microscope (STM), or a transmission electron microscope (TEM). The AFM, STM, and TEM can obtain accurate height data, thereby improving the accuracy and reliability of the relationship between the grayscale and height of the film layer in the morphology database. Accordingly, the accuracy and reliability of the height data of the film layer to be measured inferred from the data can be improved, thereby improving the accuracy and reliability of the three-dimensional morphology of the film layer to be measured.

[0049] In some embodiments of the present application, forming the grayscale-height relationship of the film layer based on the grayscale data and height data of the sample film layer includes forming the grayscale-height relationship of the film layer by function fitting. The fitting function used includes, for example, a linear function, a polynomial function, or a differential-integral function.

[0050] For example, it is necessary to measure the 3D topography of films formed from gallium nitride (GaN). GaN is an important wide-bandgap semiconductor material widely used in blue LEDs and high-frequency, high-power electronic devices. Its surface topography is crucial to device performance, so 3D topography measurement of GaN films is often required.

[0051] The morphology database includes the relationship between the grayscale and height of the gallium nitride film layer. In some embodiments of the present application, the relationship between the grayscale and height of the gallium nitride film layer can be established in the following manner.

[0052] Using a CD-SEM to obtain grayscale images of GaN thin films, surface height data can be obtained using AFM or microscopy combined with TEM and aligned with the CD-SEM image. For example, coordinate scaling and correlation operations can be used to align the coordinate systems of the two. Multiple areas can be imaged to obtain representative data.

[0053] Next, a functional relationship is established to set the relationship between gray level, surface height and first-order derivative:

[0054]

[0055] The coefficients a, b and constant c were determined by regression analysis from experimental data of samples acquired using feature-size scanning electron microscopy and atomic force microscopy.

[0056] In some embodiments of the present application, it is assumed that the gray level I of the CD-SEM image, the height h and the first-order derivative of the surface in the TEM image are function, assuming that the gray level I can be divided into two parts, one part is the gray level G caused by height, and the other part is the surface morphology. The grayscale S caused by , then the grayscale level I can be expressed as:

[0057]

[0058] Where a is the height coefficient, b is the surface topography coefficient, c is the grayscale constant, and x represents the horizontal distance.

[0059] like Figure 2 As shown, this relationship is established based on the TEM surface morphology through multiple linear regression or nonlinear regression method, wherein this relationship is not fixed, and the appropriate function model is selected according to the final fitting result.

[0060] Obtaining surface morphology envelope solution based on TEM images Calculate the first derivative from the known surface height data using the finite difference method:

[0061]

[0062] For example, from TEM images hx relationship, and from the CD-SEM cross-section (such as Figure 3 As shown), we can obtain the Ix relationship and solve Equation 1.

[0063] In the above formula, we first use the first-order derivative to characterize it, and then solve Substitute the above equation to verify whether the function expression matches the TEM height information. If not, use second-order or higher-order expressions to represent and verify the function expression until it matches the TEM height information. This solves a, b, and c, and obtains a fitting function that represents the relationship between grayscale and height.

[0064] In some embodiments of the present application, the previously established formula 1 can also be verified by designing gallium nitride film layers with the same surface morphology at different heights and / or with different surface morphologies at the same height, that is, forming different verification film layers for calibration. On the basis of the solved fitting function, by designing the same Measuring surfaces at different heights and different Fitting The functional relationship between h and gray level I, the gray level I in the CD-SEM image is finally divided into two parts, one of which is I caused by the height h. h and surface morphology-induced I S , I=I S +I h , where I h , which is the data we ultimately need.

[0065] I h =G(h)

[0066]

[0067] Effect of subtracting surface topography from original CD-SEM images:

[0068]

[0069] Next, the corrected grayscale data is used to generate a 3D topography model. The corrected grayscale data is converted into actual height data:

[0070] h=G -1 (I h )

[0071] Finally, a three-dimensional surface topography image is generated, and Formula 1 can be used to verify and modify the grayscale and height relationship of the GaN film layer based on the deviation between the final reconstruction and the actual topography.

[0072] In the embodiment of the present application, the relationship between the grayscale and height of the gallium nitride film layer is:

[0073]

[0074] The coefficients a, b and constant c are determined and corrected through the above calculations to obtain the final values.

[0075] That is, the grayscale and height relationship of the GaN film layer is obtained in the morphology database.

[0076] Next, for the surface morphology of the GaN structure of interest, that is, the film layer to be measured, the grayscale data of the GaN structure of interest can be obtained through CD-SEM. Then, based on the obtained grayscale data and the grayscale and height relationship of the GaN film layer in the morphology database, the height data of the GaN structure of interest can be solved, thereby quickly and conveniently obtaining the three-dimensional morphology of the GaN structure of interest.

[0077] In another embodiment of the present application, for example, it is necessary to perform three-dimensional topography measurement on a film layer formed of silicon (Si) material. Silicon is the most commonly used semiconductor material, and its surface properties have a significant impact on the performance of integrated circuits. Therefore, it is often necessary to perform three-dimensional topography measurement on films formed of silicon material.

[0078] The morphology database includes the grayscale and height relationship of the silicon film layer. In some embodiments of the present application, the grayscale and height relationship of the silicon film layer can be established in the following manner.

[0079] A CD-SEM is used to image the surface of a silicon film, which can be a silicon wafer, to obtain a grayscale image. A scanning tunneling microscope (STM) or AFM is used to perform high-resolution surface topography measurements on the same area.

[0080] For example, the following functional relationship can be established:

[0081]

[0082] Then, the least squares method can be used to fit the detected sample experimental data to determine the coefficients (k1), (k2), (k3), b, and C. That is, the grayscale and height relationship of the silicon film layer is formed.

[0083] In some embodiments of the present application, the corrected grayscale data can then be used to generate the three-dimensional surface topography of the silicon film layer. The accuracy and consistency of the reconstruction can be evaluated by comparing it with the STM or AFM image. Furthermore, a verification film layer of silicon material can be formed to correct the grayscale and height relationship of the silicon film layer.

[0084] The morphology database stores the grayscale and height relationship of the silicon film layer obtained by the above method. Next, for the surface morphology of the silicon structure of interest, that is, the film layer to be measured, the grayscale data of the silicon structure of interest can be obtained through CD-SEM. Then, based on the obtained grayscale data and the grayscale and height relationship of the silicon film layer in the morphology database, the height data of the silicon structure of interest can be solved, thereby quickly and conveniently obtaining the three-dimensional morphology of the silicon structure of interest.

[0085] In the embodiment of the present application, the topography database may store the grayscale and height relationships of various film layers, such as silicon carbide (SiC), silicon oxide (SiO2), silicon nitride (SiN), gallium arsenide (GaAs), copper (Cu), aluminum (Al), etc. When encountering a material film layer of interest, such as a silicon oxide film layer, it is only necessary to obtain the grayscale data of the silicon oxide film layer to be tested. Then, based on the grayscale and height relationships of the silicon oxide film layer stored in the topography database, the height data of the silicon oxide film layer to be tested can be obtained, thereby quickly obtaining the three-dimensional topography of the silicon oxide film layer to be tested.

[0086] The present application also provides a three-dimensional shape measurement system. Figure 4 As shown, the three-dimensional shape measurement system includes:

[0087] A morphology database 100, wherein the morphology database 100 includes a grayscale and height relationship of at least one film layer;

[0088] A grayscale measurement unit 110, which is used to obtain grayscale data of the film layer to be measured; and

[0089] The processing unit 120 is configured to obtain the height data of the film layer to be measured according to the grayscale data of the film layer to be measured and the relationship between the grayscale and the height of the film layer, so as to obtain the three-dimensional morphology of the film layer to be measured.

[0090] In an embodiment of the present application, the processing unit 120 is connected to the morphology database 100 and the grayscale measurement unit 110. The grayscale data of the film layer to be measured obtained by the grayscale measurement unit 110 can be provided to the processing unit 120. The grayscale and height relationship of the corresponding film layer in the morphology database 100 can be provided to the processing unit 120. The processing unit 120 can obtain the height data of the film layer to be measured based on the received data, thereby obtaining the three-dimensional morphology of the film layer to be measured.

[0091] The morphology database 100 may store the grayscale and height relationships of various film layers. The grayscale measurement unit 110 may be a characteristic dimension scanning electron microscope (CD-SEM). The processing unit 120 may be a processor with certain computing capabilities.

[0092] An embodiment of the present application also provides a computer-readable storage medium, on which instructions are stored. When the instructions are executed by a processor, the height data of the film layer to be measured is obtained based on the grayscale data of the film layer to be measured and the relationship between the grayscale and height of the film layer, so as to obtain the three-dimensional morphology of the film layer to be measured.

[0093] In the three-dimensional morphology measurement method, system and computer-readable storage medium provided in the embodiments of the present application, a morphology database including the grayscale and height relationship of at least one film layer is established. Then, by obtaining the grayscale data of the film layer to be measured, the height data of the film layer to be measured can be deduced, thereby obtaining the three-dimensional morphology of the film layer to be measured, which simplifies the method for obtaining the three-dimensional morphology, improves the efficiency of obtaining the three-dimensional morphology, and reduces the cost of obtaining the three-dimensional morphology.

[0094] Throughout this application, references to "one embodiment" or "some embodiments" mean that a feature, structure, or characteristic described in connection with that embodiment is included in at least one embodiment or at least some embodiments of this application. Thus, the appearance of the phrases "in one embodiment" or "in some embodiments" throughout this application does not necessarily refer to the same embodiment or embodiments. Furthermore, in one or more embodiments, features, structures, or characteristics may be combined in any suitable combinations and / or subcombinations.

[0095] Although some specific embodiments of the present application have been described in detail by way of example, it will be understood by those skilled in the art that the above examples are for illustration only and are not intended to limit the scope of the present application. The various embodiments of the present application may be combined in any manner without departing from the spirit and scope of the present application. It will also be understood by those skilled in the art that various modifications may be made to the embodiments without departing from the scope and spirit of the present application. The scope of the present application is defined by the appended claims.

Claims

1. A three-dimensional shape measurement method, characterized in that: The three-dimensional shape measurement method comprises: Establishing a morphology database, wherein the morphology database includes a grayscale and height relationship of at least one film layer; Obtaining grayscale data of the film layer to be measured; and, According to the grayscale data of the film layer to be measured and the relationship between the grayscale and the height of the film layer, the height data of the film layer to be measured is obtained to obtain the three-dimensional morphology of the film layer to be measured.

2. The three-dimensional shape measurement method according to claim 1, wherein: Establishing a morphology database, wherein the morphology database includes the grayscale and height relationship of at least one film layer including: Acquiring grayscale data and height data of at least one sample film layer; and, A grayscale and height relationship of the film layer is formed according to the grayscale data and height data of the sample film layer.

3. The three-dimensional shape measurement method according to claim 2, wherein: After forming the grayscale and height relationship of the film layer according to the grayscale data and height data of the sample film layer, a morphology database is established, wherein the morphology database includes the grayscale and height relationship of at least one film layer and further includes: Acquiring grayscale data and height data of at least one verification film layer; and, The grayscale and height relationship of the film layer is corrected according to the grayscale data and height data of the verification film layer.

4. The three-dimensional shape measurement method according to any one of claims 1 to 3, wherein: The grayscale data of the film layer to be measured is obtained by a characteristic size scanning electron microscope.

5. The three-dimensional shape measurement method according to claim 2 or 3, characterized in that: The grayscale data of the sample film layer is obtained by a characteristic size scanning electron microscope, and the height data of the sample film layer is obtained by an atomic force microscope, a scanning tunneling microscope or a transmission electron microscope.

6. The three-dimensional shape measurement method according to claim 3, wherein: The grayscale data of the verification film layer is obtained by a characteristic size scanning electron microscope, and the height data of the verification film layer is obtained by an atomic force microscope, a scanning tunneling microscope or a transmission electron microscope.

7. The three-dimensional shape measurement method according to claim 2 or 3, wherein: Forming the grayscale and height relationship of the film layer according to the grayscale data and height data of the sample film layer includes: The grayscale and height relationship of the film layer is formed by function fitting.

8. The three-dimensional shape measurement method according to claim 7, wherein: In forming the grayscale and height relationship of the film layer by function fitting, the fitting function used includes: a linear function, a polynomial function or a differential integral function.

9. A three-dimensional shape measurement system, characterized in that: The three-dimensional shape measurement system comprises: A morphology database, the morphology database including a grayscale and height relationship of at least one film layer; a grayscale measurement unit, the grayscale measurement unit being used to obtain grayscale data of the film layer to be measured; and A processing unit is used to obtain the height data of the film layer to be measured according to the grayscale data of the film layer to be measured and the relationship between the grayscale and height of the film layer, so as to obtain the three-dimensional morphology of the film layer to be measured.

10. A computer-readable storage medium, characterized in that The computer-readable storage medium stores instructions. When the instructions are executed by the processor, the height data of the film layer to be measured is obtained based on the grayscale data of the film layer to be measured and the relationship between the grayscale and height of the film layer to obtain the three-dimensional morphology of the film layer to be measured.