Imaging sensing device, preparation method thereof and imaging sensing device

Abstract

The invention discloses an imaging sensing device, a preparation method thereof and an imaging sensing device. The imaging sensing device comprises a substrate and a photoelectric conversion layer which is located on one side of the substrate and comprises a plurality of sub-pixels; the plurality of sub-pixels are arranged in an array, the polarization separation structure layer is located on the side, away from the substrate, of the photoelectric conversion layer, the polarization separation structure layer comprises a plurality of polarization separation units, and one polarization separation unit corresponds to one sub-pixel; the polarization separation unit comprises a plurality of columnar structures, the columnar structures are periodically arranged, and the size of each columnar structure ranges from the nanometer level to the micrometer level. The imaging sensing device can improve light efficiency, and the polarization separation structure layer can reduce ghosting and stray light of the imaging sensing device. Meanwhile, the polarization separation structure layer is a single-layer planar pattern, so that the preparation process can be simplified, and the cost can be reduced; in addition, miniaturization of the imaging sensing device is facilitated.

Description

Technical Field

[0001] The embodiments of the present disclosure belong to the field of display technology, and particularly relate to an imaging sensing device, a preparation method thereof, and an imaging sensing apparatus. Background Art

[0002] Polarization 3D sensing technology exploits the mapping relationship between the polarization characteristics of light emitted from an object's surface and the normal direction of the surface's microfacets. Integrating these normal directions can reveal the 3D topography of the object's surface. Focal plane polarization imaging cameras, with their high frame rate, low cost, and compact size, hold great potential for application in consumer electronics 3D sensing. Summary of the Invention

[0003] In a first aspect, an embodiment of the present disclosure provides an imaging sensing device, comprising a substrate,

[0004] The photoelectric conversion layer is located on one side of the substrate and includes a plurality of sub-pixels arranged in an array.

[0005] a polarization separation structure layer, located on a side of the photoelectric conversion layer away from the substrate, the polarization separation structure layer comprising a plurality of polarization separation units, one polarization separation unit corresponding to one sub-pixel;

[0006] The polarization separation unit includes a plurality of columnar structures, which are periodically arranged and have a size ranging from nanometer to micrometer.

[0007] In some embodiments, the polarization separation unit includes a first polarization separation unit and a second polarization separation unit, and polarization directions of the first polarization separation unit and the second polarization separation unit are orthogonal;

[0008] Two sub-pixels adjacent in a row or in a column correspond to the first polarization separation unit and the second polarization separation unit respectively;

[0009] The hyperbolic phase of the first polarization separation unit is:

[0010]

[0011] The hyperbolic phase of the second polarization separation unit is:

[0012]

[0013] Among them, f is the focal length of the polarization separation unit, the value range of f is 50nm~10μm, λ is the operating wavelength of the polarization separation unit, (x, y) is the coordinate of the columnar structure in the polarization separation unit, and x0 is half of the side length of the sub-pixel.

[0014] In some embodiments, four sub-pixels in adjacent rows and columns constitute a pixel;

[0015] The polarization separation unit corresponding to the pixel includes two first polarization separation units and two second polarization separation units;

[0016] The polarization directions of the two first polarization separation units are 0° and 45° respectively, and the polarization directions of the two second polarization separation units are 90° and 135° respectively.

[0017] In some embodiments, the plurality of columnar structures follow a periodic arrangement rule of a tetragonal lattice or a hexagonal lattice;

[0018] The shape of the columnar structure includes a quadrangular prism or an elliptical prism;

[0019] The size of the long side of the orthographic projection of the columnar structure on the substrate is in the range of 40 nm to 1 μm, the size of the short side is in the range of 40 nm to 1 μm, and the height of the columnar structure in the direction away from the substrate is in the range of 10 nm to 10 μm;

[0020] The period of the columnar structure ranges from 40 nm to 5 μm.

[0021] In some embodiments, the columnar structure material includes silicon oxide, silicon nitride or metal material.

[0022] The metal material includes aluminum, silver or gold.

[0023] In some embodiments, at least three of the sub-pixels that are adjacent in rows and / or columns constitute a pixel;

[0024] The imaging sensing device further includes a color separation structure layer located on a side of the photoelectric conversion layer away from the substrate.

[0025] The color separation structure layer includes a plurality of binary gratings, and one binary grating corresponds to one pixel;

[0026] The binary grating includes a plurality of subunits arranged in an array with the same period, at least some of the subunits are provided with microstructures, and at least some of the subunits are not provided with the microstructures.

[0027] In some embodiments, the microstructure includes a one-dimensional wire grid structure or a two-dimensional micro-pillar structure;

[0028] The period of the subunits ranges from 0.01 μm to 0.5 μm, and the height of the microstructure along a direction away from the substrate ranges from 0.05 μm to 5 μm.

[0029] In some embodiments, the material of the microstructure includes silicon dioxide, silicon nitride, or titanium dioxide.

[0030] In some embodiments, the orthographic projections of the polarization separation structure layer and the color separation structure layer on the substrate do not overlap.

[0031] The polarization separation structure layer and the color separation structure layer are arranged in the same layer and made of the same material.

[0032] In some embodiments, the color separation structure layer is located on a side of the polarization separation structure layer facing away from the substrate.

[0033] The orthographic projections of the color separation structure layer and the polarization separation structure layer on the photoelectric conversion layer at least partially overlap.

[0034] In some embodiments, the color separation structure layer, the polarization separation structure layer, and the orthographic projection of each of the sub-pixels on the substrate overlap.

[0035] In some embodiments, a substrate and a support column are also included.

[0036] The substrate is located on a side of the polarization separation structure layer and the color separation structure layer facing away from the base plate.

[0037] The support column is located between the substrate and the photoelectric conversion layer, and the orthographic projection of the support column on the substrate surrounds the orthographic projection of the polarization separation structure layer and the color separation structure layer on the substrate;

[0038] The support pillars form air gaps between the substrate and the polarization separation structure layer, the color separation structure layer, and the photoelectric conversion layer.

[0039] In some embodiments, it further includes a substrate, a flat layer, and support pillars.

[0040] The substrate is located on a side of the color separation structure layer away from the base plate.

[0041] The flat layer is located between the color separation structure layer and the polarization separation structure layer,

[0042] The support column is located between the flat layer and the photoelectric conversion layer, and the orthographic projection of the support column on the substrate surrounds the orthographic projection of the polarization separation structure layer and the color separation structure layer on the substrate;

[0043] The support pillars form an air gap between the planar layer, the polarization separation structure layer, and the photoelectric conversion layer.

[0044] In some embodiments, a substrate and a flat layer are further included, which are located on the side of the polarization separation structure layer and the color separation structure layer away from the substrate, and the flat layer and the substrate are stacked in sequence along a direction away from the substrate.

[0045] In some embodiments, the photoelectric conversion layer includes a plurality of pixel units, and the plurality of pixel units are arranged in an array;

[0046] The pixel unit includes a color pixel and a plurality of color polarization sub-pixels, wherein the plurality of color polarization sub-pixels are distributed around the periphery of the color pixel;

[0047] The color pixels are the pixels corresponding only to the binary grating;

[0048] The color polarization sub-pixel is the sub-pixel corresponding to both the color separation structure layer and the polarization separation unit.

[0049] In some embodiments, the photoelectric conversion layer includes a plurality of pixel units, and the plurality of pixel units are arranged in an array;

[0050] The pixel unit includes a polarization pixel and a plurality of color sub-pixels, wherein the plurality of color sub-pixels are distributed around the periphery of the polarization pixel;

[0051] The polarization pixel is a pixel composed of three or more sub-pixels of the polarization separation unit that are adjacent in rows and columns and correspond to different polarization directions respectively;

[0052] The color sub-pixels are the sub-pixels corresponding only to the color separation structure layer.

[0053] In some embodiments, the polarization directions of the polarization separation unit include 0°, 45°, and 90°;

[0054] The polarization pixel also includes a depth detection sub-pixel.

[0055] In a second aspect, an embodiment of the present disclosure further provides a method for preparing an imaging sensing device, comprising:

[0056] preparing a photoelectric conversion layer on one side of the substrate;

[0057] preparing a polarization separation structure layer on a side of the photoelectric conversion layer facing away from the substrate;

[0058] The photoelectric conversion layer is prepared by preparing a plurality of sub-pixels; the plurality of sub-pixels are arranged in an array,

[0059] The preparation of the polarization separation structure layer includes preparing a plurality of polarization separation units.

[0060] One polarization separation unit corresponds to one sub-pixel;

[0061] Preparing the polarization separation unit includes preparing a plurality of columnar structures;

[0062] The multiple columnar structures are arranged periodically, and the sizes of the columnar structures are in the range of nanometer to micrometer scale.

[0063] In some embodiments, at least three of the sub-pixels that are adjacent in rows and / or columns constitute a pixel;

[0064] The preparation method further comprises preparing a color separation structure layer on a side of the photoelectric conversion layer away from the substrate;

[0065] The color separation structure layer and the polarization separation structure layer are prepared by a single patterning process;

[0066] Preparing the color separation structure layer includes preparing a plurality of binary gratings, wherein one binary grating corresponds to one pixel;

[0067] The preparation of the binary grating includes preparing a plurality of subunits, wherein the plurality of subunits are arranged in an array with the same period, microstructures are formed in at least some of the subunits, and the microstructures are not formed in at least some of the subunits.

[0068] In a third aspect, an embodiment of the present disclosure further provides an imaging sensing device, which includes the above-mentioned imaging sensing device.

[0069] The imaging sensing device provided by the embodiment of the present disclosure, by providing a polarization separation structure layer, can improve the light efficiency of the imaging sensing device compared to the metal wire grid structure in the related art, and the polarization separation structure layer has low reflection of light, thereby reducing the ghost and stray light of the imaging sensing device; at the same time, the polarization separation structure layer is a single-layer planar pattern, which can simplify its preparation process and reduce costs; in addition, the polarization separation structure layer can be directly integrated into the CMOS2D front camera of an imaging sensing device (such as a mobile device such as a mobile phone), thereby improving the integration of the imaging sensing device, reducing the volume of the imaging sensing device, and facilitating the miniaturization of the imaging sensing device.

[0070] The imaging sensing device provided by the embodiments of the present disclosure, by adopting the above-mentioned imaging sensing device, can improve the light efficiency of the imaging sensing device, and can also improve or eliminate the ghost imaging and stray light of the imaging sensing device, thereby enhancing the imaging sensing effect of the imaging sensing device; it can also increase the integration of the imaging sensing device, reduce the volume of the imaging sensing device, and facilitate the miniaturization of the imaging sensing device. BRIEF DESCRIPTION OF THE DRAWINGS

[0071] The accompanying drawings are used to provide a further understanding of the embodiments of the present disclosure and constitute a part of the specification. Together with the embodiments of the present disclosure, they are used to explain the present disclosure and do not constitute a limitation of the present disclosure. The above and other features and advantages will become more apparent to those skilled in the art by describing the detailed exemplary embodiments with reference to the accompanying drawings, in which:

[0072] Figure 1a Schematic diagram of a metal wire grid structure used as a polarizer in related polarization 3D sensing technology.

[0073] Figure 1b This is a schematic diagram of how color film is used to achieve colorized imaging in related polarization 3D sensing technology.

[0074] Figure 2a Schematic diagram of a cross-sectional view of the structure of an imaging sensing device in an embodiment of the present disclosure.

[0075] Figure 2b Schematic diagram of the structural principle of the polarization separation structure layer in the embodiment of the present disclosure.

[0076] Figure 2c Schematic top view of the polarization separation unit in the embodiment of the present disclosure.

[0077] Figure 2d FIG. 4 is another schematic top view of the polarization separation unit in the embodiment of the present disclosure.

[0078] Figure 2e Schematic diagram of a columnar structure in the embodiment of the present disclosure.

[0079] Figure 2f Schematic diagram of another structure of the columnar structure in the embodiment of the present disclosure.

[0080] Figure 3a Schematic diagram of the polarization phase of the first polarization separation unit in the embodiment of the present disclosure.

[0081] Figure 3b Schematic diagram of the polarization phase of the second polarization separation unit in the embodiment of the present disclosure.

[0082] Figure 3c Schematic top view of the distribution of polarized sub-pixels of different colors and different polarization directions in an embodiment of the present disclosure.

[0083] Figure 3d for Figure 3c A top view of the distribution of polarization separation unit groups corresponding to the polarization sub-pixels with 0° and 90° polarization directions in green.

[0084] Figure 3e for Figure 3cA top view of the distribution of polarization separation unit groups corresponding to the polarization sub-pixels with polarization directions of 45° and 135° in the middle green.

[0085] Figure 4a Schematic diagram of the structural principle of the color separation structure layer in the embodiment of the present disclosure.

[0086] Figure 4b Schematic top view of a corresponding distribution of the color separation structure layer and pixels in an embodiment of the present disclosure.

[0087] Figure 4c FIG. 1 is a top view schematic diagram of another corresponding distribution of the color separation structure layer and pixels in an embodiment of the present disclosure.

[0088] Figure 4d A schematic structural diagram of a binary grating in a color separation structure layer according to an embodiment of the present disclosure.

[0089] Figure 5 This is the optimization flow chart of the color separation structure layer based on the GA genetic algorithm.

[0090] Figure 6a This is a top view of the distribution of the polarization separation structure layer and the color separation structure layer in the embodiment of the present disclosure.

[0091] Figure 6b Schematic diagram of a cross-sectional view of the structure of another imaging sensing device in an embodiment of the present disclosure.

[0092] Figure 6c Schematic diagram of a cross-sectional view of the structure of another imaging sensing device in an embodiment of the present disclosure.

[0093] Figure 6d Schematic diagram of a cross-sectional view of the structure of another imaging sensing device in an embodiment of the present disclosure.

[0094] Figure 6e Schematic diagram of a cross-sectional view of the structure of another imaging sensing device in an embodiment of the present disclosure.

[0095] Figure 7a This is another top view of the distribution of the polarization separation structure layer and the color separation structure layer in the embodiment of the present disclosure.

[0096] Figure 7b This is another top view of the distribution of the polarization separation structure layer and the color separation structure layer in the embodiment of the present disclosure.

[0097] Figure 8 Schematic diagram of the preparation process of the imaging sensing device in an embodiment of the present disclosure.

[0098] Figure 9 is a flow chart of an imaging sensing method of an imaging sensing device according to an embodiment of the present disclosure;

[0099] Figure 10 This is a block diagram of the imaging sensing principle of the imaging sensing device in an embodiment of the present disclosure;

[0100] Figure 11 Schematic diagram illustrating the application of the imaging sensing device in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0101] To enable those skilled in the art to better understand the technical solutions of the embodiments of the present disclosure, an imaging sensing device, a preparation method thereof, and an imaging sensing apparatus provided by the embodiments of the present disclosure are further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0102] The embodiments of the present disclosure will be described more fully below with reference to the accompanying drawings, but the illustrated embodiments may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully enable those skilled in the art to understand the scope of this disclosure.

[0103] The embodiments of the present disclosure are not limited to the embodiments shown in the drawings, but include modifications of the configurations formed based on the manufacturing process. Therefore, the regions illustrated in the drawings are schematic in nature, and the shapes of the regions shown in the drawings illustrate specific shapes of the regions, but are not intended to be limiting.

[0104] In related technologies, polarization 3D sensing technology uses a CMOS photodiode layer with a polarization structure integrated on the photosensitive side. Figure 1a As shown, the polarization structure uses a metal wire grid structure 24 as a polarizer, resulting in a loss of at least half of the light efficiency of the 3D photosensitivity, which seriously reduces the quantum efficiency of the CMOS photodiode layer 25 integrated with the polarization structure. Figure 1b As shown, a color filter 26 is provided on the photosensitive side of the CMOS photodiode layer 25 to realize colorization of 3D photosensitive imaging, which additionally reduces the light efficiency of 3D photosensitivity by two-thirds, resulting in low light efficiency of polarization 3D sensing technology.

[0105] Secondly, the metal wire grid structure reflects nearly half of the light onto the CMOS photodiode. This reflected light then reflects multiple times at the air-dielectric interface between the metal wire grid and the CMOS photodiode layer, causing secondary 3D imaging (i.e., ghosting) or stray light, which reduces the signal-to-noise ratio of the polarization 3D sensor. Currently, solutions such as creating absorption layers and anti-reflection layers are commonly used to suppress ghosting and stray light, but this makes the process very complex and costly.

[0106] Thirdly, the 3D sensors on mobile devices such as mobile phones use independent low-resolution CMOS sensors, and combined with the original high-resolution CMOS 2D front camera configuration of the mobile phone, the front side of the mobile phone is large in size and low in integration, with a large "black bangs", which affects the user experience.

[0107] In order to solve the above problems in the related art, in a first aspect, an embodiment of the present disclosure provides an imaging sensing device, wherein, Figure 2a 、 Figure 2b 、 Figure 2c 、 Figure 2d 、 Figure 2e and Figure 2f As shown, it includes a substrate 1, a photoelectric conversion layer 2, which is located on one side of the substrate 1 and includes a plurality of sub-pixels 20; the plurality of sub-pixels 20 are arranged in an array, a polarization separation structure layer 3, which is located on the side of the photoelectric conversion layer 2 away from the substrate 1, and the polarization separation structure layer 3 includes a plurality of polarization separation units 30, and one polarization separation unit 30 corresponds to one sub-pixel 20; the polarization separation unit 30 includes a plurality of columnar structures 300, and the plurality of columnar structures 300 are periodically arranged, and the size of the columnar structure 300 is nanometer to micrometer level.

[0108] Among them, the sub-pixel 20 can adopt a CMOS photoelectric conversion diode. The multiple columnar structures 300 follow the periodic arrangement rule of the tetragonal lattice or the hexagonal lattice. The substrate 1 includes a base 12 and a metal wiring layer 13. The metal wiring layer 13 is located between the base 12 and the photoelectric conversion layer 2. On the one hand, the metal wiring layer 13 provides power to the photoelectric conversion layer 2, and on the other hand, it can also output the electrical signal converted by the photoelectric conversion layer 2. By setting the polarization separation structure layer 3, the imaging sensing device can realize 3D (three-dimensional) sensing of the surface of an object, and can also realize 2D (two-dimensional) sensing of the surface of an object.

[0109] The imaging sensing device provided in this embodiment, by providing a polarization separation structure layer 3, can improve the light efficiency of the imaging sensing device compared to the metal wire grid structure in the related art, and the polarization separation structure layer 3 has low reflection of light, thereby reducing the ghost and stray light of the imaging sensing device; at the same time, the polarization separation structure layer 3 is a single-layer planar pattern, which can simplify its preparation process and reduce costs; in addition, the polarization separation structure layer 3 can be directly integrated into the CMOS 2D front camera of an imaging sensing device (such as a mobile device such as a mobile phone), thereby improving the integration of the imaging sensing device, reducing the volume of the imaging sensing device, and facilitating the miniaturization of the imaging sensing device.

[0110] In some embodiments, as Figure 3a 、 Figure 3b 、 Figure 3c 、 Figure 3d and Figure 3eAs shown, the polarization separation unit 30 includes a first polarization separation unit 30A and a second polarization separation unit 30B. The polarization directions of the first polarization separation unit 30A and the second polarization separation unit 30B are orthogonal. Two sub-pixels 20 adjacent in a row or column correspond to the first polarization separation unit 30A and the second polarization separation unit 30B, respectively. The hyperbolic phase of the first polarization separation unit 30A is:

[0111]

[0112] The hyperbolic phase of the second polarization separation unit 30B is:

[0113]

[0114] Wherein, f is the focal length of the polarization separation unit 30, the value range of f is 50 nm to 10 μm, λ is the operating wavelength of the polarization separation unit 30, (x, y) is the coordinate of the columnar structure 300 in the polarization separation unit 30, and x0 is half of the side length of the sub-pixel 20.

[0115] In this embodiment, different phase distributions are set for light of two orthogonal polarization states (e.g., 0° and 90°, 45° and 135°) through the first polarization separation unit 30A and the second polarization separation unit 30B, so that they converge at the opening areas of different sub-pixels 20 respectively, thereby enabling the imaging sensing device to achieve a twice-improvement in light efficiency.

[0116] In this embodiment, the first polarization separation unit 30A and the second polarization separation unit 30B constitute a polarization separation unit group with orthogonal polarization directions, and the two sub-pixels 20 corresponding to one polarization separation unit group constitute a polarization sub-pixel group; the phase arrangement rule of the polarization separation unit group corresponding to different polarization sub-pixel groups is determined as follows: since the columnar structure 300 in the polarization separation unit 30 is an asymmetric structure, the phases of the incident light in the long axis direction polarization state and the short axis direction polarization state of the columnar structure 300 are different, and a number (such as k) of columnar structures 300 with different long and short side values ​​are simulated to construct and Database; Select the closest of and closest to of The corresponding polarization separation unit group is obtained by traversing all (x, y) coordinates to arrange the polarization separation unit group.

[0117] In this embodiment, Figure 3cR-0°, R-45°, R-90°, and R-135° represent polarized sub-pixels of red with different polarization directions; G-0°, G-45°, G-90°, and G-135° represent polarized sub-pixels of green with different polarization directions; B-0°, B-45°, B-90°, and B-135° represent polarized sub-pixels of blue with different polarization directions.

[0118] In some embodiments, as Figure 3c As shown, four sub-pixels 20 in adjacent rows and columns constitute a pixel 200. The polarization separation unit corresponding to pixel 200 includes two first polarization separation units 30A and two second polarization separation units 30B. The polarization directions of the two first polarization separation units 30A are 0° and 45°, respectively, and the polarization directions of the two second polarization separation units 30B are 90° and 135°, respectively. In other words, four polarization sub-pixels with polarization directions of 0°, 45°, 90°, and 135°, respectively, constitute a polarization pixel.

[0119] In some embodiments, as Figure 2b-2f As shown, multiple columnar structures 300 follow the periodic arrangement rule of a tetragonal lattice or a hexagonal lattice; the shape of the columnar structure 300 includes a quadrangular prism or an elliptical prism; the size range of the long side X of the orthographic projection of the columnar structure 300 on the substrate 1 is 40nm~1μm, the size range of the short side Y is 40nm~1μm, and the height H of the columnar structure 300 along the direction away from the substrate 1 is 10nm~10μm; the period P of the columnar structure 300 is in the range of 40nm~5μm.

[0120] In some embodiments, the columnar structure 300 is made of silicon oxide (SiO), silicon nitride (SiN), or a metal material, and the metal material includes aluminum (Al), silver (Ag), or gold (Au).

[0121] In some embodiments, as Figure 2a 、 Figure 4a 、 Figure 4b 、 Figure 4c and Figure 4d As shown, at least three sub-pixels 20 in adjacent rows and / or columns constitute a pixel 200; the imaging sensing device also includes a color separation structure layer 4, which is located on the side of the photoelectric conversion layer 2 facing away from the substrate 1, and the color separation structure layer 4 includes a plurality of binary gratings 40, and one binary grating 40 corresponds to one pixel 200; the binary grating 40 includes a plurality of sub-units 400, and the plurality of sub-units 400 are arranged in an array with the same period, and at least some of the sub-units 400 are provided with a microstructure 400A, and at least some of the sub-units 400 are not provided with a microstructure.

[0122] The color separation structure layer 4 can split incident white light (e.g., natural light) into light beams of different colors (e.g., RGB, meaning red, green, and blue) with different emission directions. These light beams of different colors and emission directions are then converged onto the openings of different sub-pixels 20. For example, R (red) light entering the opening of one sub-pixel 20 forms a red sub-pixel; G (green) light entering the openings of one or two sub-pixels 20 forms a green sub-pixel; and B (blue) light entering the opening of one sub-pixel 20 forms a blue sub-pixel. The provision of the color separation structure layer 4 can triple the light efficiency of the imaging sensor device.

[0123] In some embodiments, the microstructure 400A includes a one-dimensional wire grid structure (not shown) or a two-dimensional micro-pillar structure (e.g., Figure 4a 、 Figure 4c and Figure 4d (as shown); the period of the subunits 400 ranges from 0.01 μm to 0.5 μm, and the height of the microstructures 400A in the direction away from the substrate 1 ranges from 0.05 μm to 5 μm. This arrangement ensures the diffraction efficiency of the color separation structure layer 4. In this embodiment, the height of the microstructures 400A in each subunit 400 is consistent, facilitating planar patterning of the color separation structure layer 4.

[0124] In some embodiments, the material of the microstructure 400A includes silicon dioxide (SiO 2 ), silicon nitride (SiN x ), or titanium dioxide (TiO 2 ).

[0125] In some embodiments, the color separation structure layer 4 includes a plurality of fixed-period binary gratings 40. The orthographic projection of each binary grating 40 on the substrate 1 corresponds to a set of RGB (red, green, and blue) sub-pixels 20. The binary grating 40 is composed of a plurality of fixed-period sub-units 400. Some sub-units 400 contain microstructures 400A, while others do not. The sub-units 400 in a binary grating 40 can be numbered 1, 2, ..., N, with each sub-unit 400 randomly binary-coded as 0 or 1. The binary coding rule is: if a sub-unit 400 contains microstructure 400A, the sub-unit 400 is encoded as 1; if a sub-unit 400 does not contain microstructure 400A, the sub-unit 400 is encoded as 0. In this way, the binary grating 40 forms a set of specifically coded sub-unit sequences. Light passing through the randomly coded binary grating 40 is diffracted and scattered, redistributing the light energy. Theoretically, different light energy distribution states can be obtained by controlling the coding sequence of the binary grating 40 .

[0126] In some embodiments, as Figure 5As shown, a mathematical optimization algorithm and an electromagnetic field calculation simulation algorithm are used to set an optimization objective function at a specific projection position away from the binary grating 40, optimize the coding sequence of the binary grating 40, and achieve color separation of RGB (red, green, and blue) light. The mathematical optimization algorithm can be a global or local algorithm, such as a gradient optimization algorithm, a genetic algorithm (GA), a particle swarm optimization algorithm, etc. The optimization objective function FOM is set as TrR × TrG × TrB, where TrR is the red light transmittance of the R (red) sub-pixel area, TrG is the green light transmittance of the G (green) sub-pixel area, and TrB is the blue light transmittance of the B (blue) sub-pixel area.

[0127] like Figure 5 The figure shows the optimization process of the color separation structure layer based on the GA genetic algorithm. First, the input factors are input, namely, the material of the color separation structure layer 4, the period of the binary grating 40 subunit 400, and the height of the microstructure 400A in the binary grating 40 subunit 400. The binary code population is initialized, namely, the binary grating 40 is initially binary-encoded. The initial binary encoding refers to randomly assigning a set of binary codes to each subunit 400 in the binary grating 40. The binary code population FOM is calculated, namely, the population evaluation function FOM is calculated. Then, the next generation of binary code population is generated. Then, the FOM is evaluated to see whether it meets the convergence condition, namely, whether the light transmittance after iterating the population evaluation function FOM algorithm is greater than the set light transmittance. If it meets the convergence condition, the binary code population (i.e., the optimized binary code of each subunit 400 in the binary grating 40) is output. If not, the binary code population FOM is calculated and the next generation of binary code population is generated repeatedly until the FOM meets the convergence condition.

[0128] In some embodiments, as Figure 2a and Figure 6a As shown, the orthographic projections of the polarization separation structure layer 3 and the color separation structure layer 4 on the substrate 1 do not overlap. The polarization separation structure layer 3 and the color separation structure layer 4 are arranged in the same layer and made of the same material. This arrangement allows the polarization separation structure layer 3 and the color separation structure layer 4 to be simultaneously manufactured through a single patterning process, thereby simplifying the manufacturing process of the imaging sensor device.

[0129] In some embodiments, as Figure 2a and Figure 6a As shown, the imaging sensing device also includes a substrate 5 and a support column 6. The substrate 5 is located on the side of the polarization separation structure layer 3 and the color separation structure layer 4 facing away from the substrate 1. The support column 6 is located between the substrate 5 and the photoelectric conversion layer 2, and the orthographic projection of the support column 6 on the substrate 1 surrounds the orthographic projection of the polarization separation structure layer 3 and the color separation structure layer 4 on the substrate 1; the support column 6 forms an air gap 7 between the substrate 5 and the polarization separation structure layer 3, the color separation structure layer 4 and the photoelectric conversion layer 2.

[0130] The support column 6 can be made of silicon nitride (SiN), silicon oxide (SiO), polymer or aluminum (Al), etc. The air gap 7 formed by the support column 6 can improve the color and efficiency of the polarization separation structure layer 3 and the color separation structure layer 4 in the air.

[0131] In some embodiments, a microlens may be further provided on the side of the substrate 5 facing away from the base plate 1. The microlens can enhance light effects.

[0132] In some embodiments, as Figure 6b and Figure 6c As shown, the color separation structure layer 4 is located on the side of the polarization separation structure layer 3 facing away from the substrate 1 , and the orthographic projections of the color separation structure layer 4 and the polarization separation structure layer 3 on the photoelectric conversion layer 2 at least partially overlap.

[0133] In some embodiments, as Figure 6b As shown, the orthographic projections of the color separation structure layer 4, the polarization separation structure layer 3, and each sub-pixel 20 on the substrate 1 overlap. That is, the color separation structure layer 4 and the polarization separation structure layer 3 cover the entire distribution area of ​​the sub-pixels 20. The sub-pixels 20 are simultaneously subjected to color separation modulation by the color separation structure layer 4 and polarization separation modulation by the polarization separation structure layer 3. Figure 6b The structural arrangement of the neutral color separation structure layer 4 and the polarization separation structure layer 3 has a high degree of integration, and a single sub-pixel 20 can realize both colorization and polarization.

[0134] In some embodiments, as Figure 6c As shown, the orthographic projections of the color separation structure layer 4 and the polarization separation structure layer 3 on the photoelectric conversion layer 2 partially overlap. That is, the color separation structure layer 4 and the polarization separation structure layer 3 cover a portion of the distribution area of ​​the sub-pixels 20. The sub-pixels 20 can be subjected to color separation modulation by the color separation structure layer 4 and polarization separation modulation by the polarization separation structure layer 3, either individually or simultaneously.

[0135] In some embodiments, as Figure 6b and Figure 6c As shown, the imaging sensing device further includes a substrate 5, a planarization layer 8, and support pillars 6. The substrate 5 is located on the side of the color separation structure layer 4 facing away from the substrate 1. The planarization layer 8 is located between the color separation structure layer 4 and the polarization separation structure layer 3. The support pillars 6 are located between the planarization layer 8 and the photoelectric conversion layer 2. The orthographic projections of the support pillars 6 on the substrate 1 surround the orthographic projections of the polarization separation structure layer 3 and the color separation structure layer 4 on the substrate 1. The support pillars 6 form an air gap 7 between the planarization layer 8 and the polarization separation structure layer 3 and the photoelectric conversion layer 2. The air gap 7 formed by the support pillars 6 can improve the efficiency of the polarization separation structure layer 3 in the air.

[0136] In some embodiments, as Figure 6dAs shown, the imaging sensing device further includes a substrate 5 and a flat layer 8, which are located on the side of the polarization separation structure layer 3 and the color separation structure layer 4 away from the substrate 1, and the flat layer 8 and the substrate 5 are stacked in sequence in a direction away from the substrate 1.

[0137] Among them, Figure 6d As shown, the flat layer 8 can replace Figure 6a The support pillars in the substrate 5 provide support between the substrate 5 and the polarization separation structure layer 3 and the color separation structure layer 4. With this arrangement, during the manufacturing process of the imaging sensing device, it is only necessary to prepare the flat layer 8 and the substrate 5 on the side of the polarization separation structure layer 3 and the color separation structure layer 4 facing away from the substrate 1 after the polarization separation structure layer 3 and the color separation structure layer 4 are completed. This simplifies the manufacturing process of the imaging sensing device.

[0138] In some embodiments, as Figure 6e As shown, in Figure 6b Based on the structure of the imaging sensor device, the color separation structure layer can also be replaced with a color filter layer. The color filter layer includes color resists 9 of different colors and a black matrix 10. The orthographic projection of the color resists 9 on the substrate 1 overlaps the orthographic projection of the sub-pixels 20 on the substrate 1. A retaining wall 11 is provided between adjacent sub-pixels 20, and the orthographic projection of the black matrix 10 on the substrate 1 overlaps the orthographic projection of the retaining wall 11 on the substrate 1.

[0139] In some embodiments, as Figure 7a As shown, the photoelectric conversion layer 2 includes a plurality of pixel units 21, and the plurality of pixel units 21 are arranged in an array; the pixel unit 21 includes a color pixel 21A and a plurality of color polarization sub-pixels 21B, and the plurality of color polarization sub-pixels 21B are distributed around the periphery of the color pixel 21A; the color pixel 21A is a pixel corresponding only to the binary grating 40; the color polarization sub-pixel 21B is a sub-pixel corresponding to both the color separation structure layer 4 and the polarization separation unit 30.

[0140] In some embodiments, as Figure 7a As shown, R-0°, R-45°, and R-90° represent red 0° polarized sub-pixels, red 45° polarized sub-pixels, and red 90° polarized sub-pixels, respectively; G-0°, G-45°, and G-90° represent green 0° polarized sub-pixels, green 45° polarized sub-pixels, and green 90° polarized sub-pixels, respectively; and B-0°, B-45°, and B-90° represent blue 0° polarized sub-pixels, blue 45° polarized sub-pixels, and blue 90° polarized sub-pixels, respectively. Color pixel 21A includes a red sub-pixel, a green sub-pixel, and a blue sub-pixel, and does not include a polarization separation unit 30. Figure 7a The arrangement of the sub-pixels in the pixel unit 21 reduces or avoids light loss in the polarization separation structure layer 3 , thereby improving the light efficiency of the imaging sensor device.

[0141] In some embodiments, as Figure 6a As shown, the photoelectric conversion layer 2 includes a plurality of pixel units 21, and the plurality of pixel units 21 are arranged in an array; the pixel unit 21 includes a polarization pixel 21C and a plurality of color sub-pixels 21D, and the plurality of color sub-pixels 21D are distributed around the periphery of the polarization pixel 21C; the polarization pixel 21C is a pixel composed of three or more sub-pixels 20 of the polarization separation unit 30 with adjacent rows and columns and corresponding to different polarization directions respectively; the color sub-pixel 21D is a sub-pixel corresponding only to the color separation structure layer 4.

[0142] In some embodiments, as Figure 6a As shown, R, G, and B represent red sub-pixels, green sub-pixels, and blue sub-pixels, respectively; 0°, 45°, 90°, and 135° represent polarized sub-pixels with different polarization directions, respectively.

[0143] In some embodiments, as Figure 7b As shown, the polarization separation unit 30 has polarization directions of 0°, 45°, and 90°; the polarization pixel 21C also includes a depth detection sub-pixel. Specifically, the polarization pixel 21C includes polarization sub-pixels with polarization directions of 0°, 45°, and 90°, respectively, and a depth detection sub-pixel. The depth detection sub-pixel is, for example, a ToF sub-pixel. A ToF sub-pixel is a depth detection sub-pixel that can detect the depth of a target object's surface.

[0144] Based on the above structure of the imaging sensing device, the embodiment of the present disclosure further provides a method for preparing the imaging sensing device, wherein: Figure 8 As shown, it includes: preparing a photoelectric conversion layer 2 on one side of a substrate 1; preparing the photoelectric conversion layer 2 includes preparing a plurality of sub-pixels; the plurality of sub-pixels are arranged in an array; preparing a polarization separation structure layer 3 on the side of the photoelectric conversion layer 2 facing away from the substrate 1; preparing the polarization separation structure layer 3 includes preparing a plurality of polarization separation units, one polarization separation unit corresponding to one sub-pixel; preparing the polarization separation unit includes preparing a plurality of columnar structures 300; the plurality of columnar structures 300 are periodically arranged, and the size of the columnar structures 300 is nanometer to micrometer scale.

[0145] In some embodiments, at least three sub-pixels in adjacent rows and / or columns constitute a pixel; the preparation method also includes preparing a color separation structure layer 4 on the side of the photoelectric conversion layer 2 facing away from the substrate 1; the color separation structure layer 4 and the polarization separation structure layer 3 are prepared by a single patterning process; preparing the color separation structure layer 4 includes preparing a plurality of binary gratings, one binary grating corresponding to one pixel; preparing the binary grating includes preparing a plurality of sub-units, the plurality of sub-units are arranged in an array with the same period, microstructures are formed in at least some of the sub-units, and microstructures are not formed in at least some of the sub-units.

[0146] In this embodiment, the color separation structure layer 4 and the polarization separation structure layer 3 are manufactured through a single patterning process, thereby simplifying the manufacturing process of the imaging sensing device.

[0147] In this embodiment, Figure 8 As shown, the preparation process of the imaging sensing device specifically includes: a) sequentially preparing a metal wiring layer 13 and a photoelectric conversion layer 2 on one side of a substrate 12, then depositing a first dielectric layer 14 on the side of the photoelectric conversion layer 2 facing away from the substrate 12, and coating a first photoresist layer 15 on the side of the first dielectric layer 14 facing away from the substrate 12;

[0148] b) exposing and developing the first photoresist layer 15 to form a pattern including a polarization separation structure layer and a color separation structure layer;

[0149] c) etching the first dielectric layer 14 to form the polarization separation structure layer 3 and the color separation structure layer 4, and removing the first photoresist layer;

[0150] d) depositing an inorganic support layer 16 on the substrate 5, and coating a second photoresist layer 17 on the side of the inorganic support layer 16 facing away from the substrate 5;

[0151] e) exposing and developing the second photoresist layer 17 to form a pattern including support pillars;

[0152] f) etching the inorganic support layer 16 to form a pattern of the support pillar 6;

[0153] g) aligning and bonding the base 12 forming the polarization separation structure layer 3 and the color separation structure layer 4 with the substrate 5 forming the support column 6;

[0154] h) Thinning the substrate 5 and forming microlenses 18 on the side of the substrate 5 facing away from the base 12 .

[0155] The imaging sensing device provided in this embodiment, by providing a polarization separation structure layer, can improve the light efficiency of the imaging sensing device compared to the metal wire grid structure in the related art, and the polarization separation structure layer has low reflection of light, thereby reducing the ghost and stray light of the imaging sensing device; at the same time, the polarization separation structure layer is a single-layer planar pattern, which can simplify its preparation process and reduce costs; in addition, the polarization separation structure layer can be directly integrated into the CMOS2D front camera of an imaging sensing device (such as a mobile device such as a mobile phone), thereby improving the integration of the imaging sensing device, reducing the volume of the imaging sensing device, and facilitating the miniaturization of the imaging sensing device.

[0156] In a second aspect, an embodiment of the present disclosure further provides an imaging sensing device, which includes the imaging sensing device in the above embodiment.

[0157] By adopting the imaging sensing device in the above-mentioned embodiment, the light efficiency of the imaging sensing device can be improved, and the ghost imaging and stray light of the imaging sensing device can be improved or eliminated, thereby enhancing the imaging sensing effect of the imaging sensing device; the integration of the imaging sensing device can be improved, and the volume of the imaging sensing device can be reduced, which is conducive to the miniaturization of the imaging sensing device.

[0158] In a third aspect, the present disclosure also provides an imaging sensing method of an imaging sensing device, such as Figure 9 As shown, the method includes: step S101: an imaging sensing device collects polarization intensity information of different polarization directions of light reflected from the surface of a target object;

[0159] Step S102: solving the Stokes vector according to the polarized light intensity information;

[0160] In this step, the Stokes vector:

[0161] Step S103: Calculating the normal direction of the microfacet on the surface of the target object according to the Stokes vector;

[0162] In this step, the normal direction of the microfacet on the surface of the target object is characterized by the azimuth angle and the zenith angle. The azimuth angle can be solved according to the Stokes vector. and zenith angle θ. The specific calculation formula is:

[0163]

[0164]

[0165] Among them, DoP is the degree of polarization, which refers to the polarization degree of light reflected from the surface of the target object received by the imaging sensor device; the zenith angle θ can be calculated based on the degree of polarization; in the degree of polarization calculation formula, n represents the refractive index of the reflective surface of the target object.

[0166] Step S104: integrating the normal direction of the microfacets on the surface of the target object to obtain the three-dimensional information of the surface of the target object;

[0167] Among them, since there is a mapping relationship between the polarization characteristics of the reflected light on the surface of the target object and the normal direction of the micro-facet on the surface of the target object, the three-dimensional information of the surface of the target object, that is, the 3D morphology of the surface of the target object, can be solved by integrating the normal direction of the micro-facet on the surface of the target object.

[0168] Step S105: outputting the three-dimensional information of the target object surface to an imaging device.

[0169] In some embodiments, as Figure 10As shown in the figure, the imaging sensing device consists of an imaging sensing device, an ADC circuit (analog-to-digital conversion circuit), a digital logic circuit, a timing control circuit, an output circuit, and an imaging device. The imaging sensing device receives light signals reflected from the surface of the target object and converts them into analog electrical signals. The analog electrical signals are then converted into digital electrical signals by the ADC. The digital electrical signals are processed by the digital logic circuit and then output from the output circuit to the imaging device under the control of the timing control circuit. The imaging device then images the electrical signals, thereby achieving 3D or 2D imaging of the target object's surface.

[0170] In some embodiments, as Figure 11 As shown, it is an application demonstration of the imaging sensing device in this embodiment. After the imaging sensing device 19 and the lens 22 are assembled and set on a mobile phone mobile device 23, 3D or 2D face recognition can be realized.

[0171] The imaging sensing device provided in this embodiment can improve the light efficiency of the imaging sensing device and improve or eliminate the ghost imaging of the imaging sensing device by adopting the imaging sensing device in the above embodiment, thereby enhancing the imaging sensing effect of the imaging sensing device.

[0172] The imaging sensing device provided in the embodiments of the present disclosure can be any product or component with a display function, such as an OLED panel, an OLED TV, an OLED billboard, a display, a mobile phone, a navigator, etc. It is understandable that the above embodiments are merely exemplary embodiments adopted to illustrate the principles of the present disclosure, but the present disclosure is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present disclosure, and these modifications and improvements are also considered to be within the scope of protection of the present disclosure.

Claims

1. An imaging sensing device, wherein: Including substrate, The photoelectric conversion layer is located on one side of the substrate and includes a plurality of sub-pixels arranged in an array. a polarization separation structure layer, located on a side of the photoelectric conversion layer away from the substrate, the polarization separation structure layer comprising a plurality of polarization separation units, one polarization separation unit corresponding to one sub-pixel; The polarization separation unit includes a plurality of columnar structures, which are periodically arranged and have a size ranging from nanometer to micrometer.

2. The imaging sensing device according to claim 1, wherein: The polarization separation unit includes a first polarization separation unit and a second polarization separation unit, wherein polarization directions of the first polarization separation unit and the second polarization separation unit are orthogonal; Two sub-pixels adjacent in a row or in a column correspond to the first polarization separation unit and the second polarization separation unit respectively; The hyperbolic phase of the first polarization separation unit is: The hyperbolic phase of the second polarization separation unit is: Among them, f is the focal length of the polarization separation unit, the value range of f is 50nm~10μm, λ is the operating wavelength of the polarization separation unit, (x, y) is the coordinate of the columnar structure in the polarization separation unit, and x0 is half of the side length of the sub-pixel.

3. The imaging sensing device according to claim 2, wherein: Four sub-pixels in adjacent rows and columns constitute a pixel; The polarization separation unit corresponding to the pixel includes two first polarization separation units and two second polarization separation units; The polarization directions of the two first polarization separation units are 0° and 45° respectively, and the polarization directions of the two second polarization separation units are 90° and 135° respectively.

4. The imaging sensing device according to claim 1, wherein: The plurality of columnar structures follow a periodic arrangement rule of a tetragonal lattice or a hexagonal lattice; The shape of the columnar structure includes a quadrangular prism or an elliptical prism; The size of the long side of the orthographic projection of the columnar structure on the substrate is in the range of 40 nm to 1 μm, the size of the short side is in the range of 40 nm to 1 μm, and the height of the columnar structure in the direction away from the substrate is in the range of 10 nm to 10 μm; The period of the columnar structure ranges from 40 nm to 5 μm.

5. The imaging sensing device according to claim 1, wherein: The columnar structure material includes silicon oxide, silicon nitride or metal material, The metal material includes aluminum, silver or gold.

6. The imaging sensing device according to claim 1, wherein: At least three of the sub-pixels that are adjacent in rows and / or columns constitute a pixel; The imaging sensing device further includes a color separation structure layer located on a side of the photoelectric conversion layer away from the substrate. The color separation structure layer includes a plurality of binary gratings, and one binary grating corresponds to one pixel; The binary grating includes a plurality of subunits arranged in an array with the same period, at least some of the subunits are provided with microstructures, and at least some of the subunits are not provided with the microstructures.

7. The imaging sensing device according to claim 6, wherein: The microstructure includes a one-dimensional wire grid structure or a two-dimensional micro-pillar structure; The period of the subunits ranges from 0.01 μm to 0.5 μm, and the height of the microstructure along a direction away from the substrate ranges from 0.05 μm to 5 μm.

8. The imaging sensing device according to claim 7, wherein: The material of the microstructure includes silicon dioxide, silicon nitride or titanium dioxide.

9. The imaging sensing device according to claim 6, wherein: The orthographic projections of the polarization separation structure layer and the color separation structure layer on the substrate do not overlap, The polarization separation structure layer and the color separation structure layer are arranged in the same layer and made of the same material.

10. The imaging sensing device according to claim 6, wherein: The color separation structure layer is located on a side of the polarization separation structure layer away from the substrate. The orthographic projections of the color separation structure layer and the polarization separation structure layer on the photoelectric conversion layer at least partially overlap.

11. The imaging sensing device according to claim 10, wherein: The color separation structure layer, the polarization separation structure layer, and the orthographic projection of each of the sub-pixels on the substrate overlap.

12. The imaging sensing device according to claim 9, wherein: Also includes a substrate and support pillars, The substrate is located on a side of the polarization separation structure layer and the color separation structure layer facing away from the base plate. The support column is located between the substrate and the photoelectric conversion layer, and the orthographic projection of the support column on the substrate surrounds the orthographic projection of the polarization separation structure layer and the color separation structure layer on the substrate; The support pillars form air gaps between the substrate and the polarization separation structure layer, the color separation structure layer, and the photoelectric conversion layer.

13. The imaging sensing device according to claim 10 or 11, wherein: Also includes a substrate, a flat layer and support pillars, The substrate is located on a side of the color separation structure layer away from the base plate. The flat layer is located between the color separation structure layer and the polarization separation structure layer, The support column is located between the flat layer and the photoelectric conversion layer, and the orthographic projection of the support column on the substrate surrounds the orthographic projection of the polarization separation structure layer and the color separation structure layer on the substrate; The support pillars form an air gap between the planar layer, the polarization separation structure layer, and the photoelectric conversion layer.

14. The imaging sensing device according to claim 9, wherein: It also includes a substrate and a flat layer, which are located on the side of the polarization separation structure layer and the color separation structure layer away from the substrate, and the flat layer and the substrate are stacked in sequence along a direction away from the substrate.

15. The imaging sensing device according to claim 10, wherein: The photoelectric conversion layer includes a plurality of pixel units, and the plurality of pixel units are arranged in an array; The pixel unit includes a color pixel and a plurality of color polarization sub-pixels, wherein the plurality of color polarization sub-pixels are distributed around the periphery of the color pixel; The color pixels are the pixels corresponding only to the binary grating; The color polarization sub-pixel is the sub-pixel corresponding to both the color separation structure layer and the polarization separation unit.

16. The imaging sensing device according to claim 9, wherein: The photoelectric conversion layer includes a plurality of pixel units, and the plurality of pixel units are arranged in an array; The pixel unit includes a polarization pixel and a plurality of color sub-pixels, wherein the plurality of color sub-pixels are distributed around the periphery of the polarization pixel; The polarization pixel is a pixel composed of three or more sub-pixels of the polarization separation unit that are adjacent in rows and columns and correspond to different polarization directions respectively; The color sub-pixels are the sub-pixels corresponding only to the color separation structure layer.

17. The imaging sensing device according to claim 16, wherein: The polarization directions of the polarization separation unit include 0°, 45° and 90°; The polarization pixel also includes a depth detection sub-pixel.

18. A method for preparing an imaging sensing device, wherein: include: preparing a photoelectric conversion layer on one side of the substrate; preparing a polarization separation structure layer on a side of the photoelectric conversion layer facing away from the substrate; The photoelectric conversion layer is prepared by preparing a plurality of sub-pixels; the plurality of sub-pixels are arranged in an array, The preparation of the polarization separation structure layer includes preparing a plurality of polarization separation units. One polarization separation unit corresponds to one sub-pixel; Preparing the polarization separation unit includes preparing a plurality of columnar structures; The multiple columnar structures are arranged periodically, and the sizes of the columnar structures are in the range of nanometer to micrometer scale.

19. The preparation method according to claim 18, wherein At least three of the sub-pixels that are adjacent in rows and / or columns constitute a pixel; The preparation method further comprises preparing a color separation structure layer on a side of the photoelectric conversion layer away from the substrate; The color separation structure layer and the polarization separation structure layer are prepared by a single patterning process; Preparing the color separation structure layer includes preparing a plurality of binary gratings, wherein one binary grating corresponds to one pixel; The preparation of the binary grating includes preparing a plurality of subunits, wherein the plurality of subunits are arranged in an array with the same period, microstructures are formed in at least some of the subunits, and the microstructures are not formed in at least some of the subunits.

20. An imaging sensing device, wherein: The imaging sensing device comprises the imaging sensing device according to any one of claims 1 to 17.

Images