Alloy material, preparation method thereof, structural member and electronic device

Abstract

The application provides an alloy material and a preparation method thereof, a structural member and an electronic device. The alloy material according to the embodiments of the application comprises, by mass fraction: 26% to 30% of chromium; 5% to 8% of molybdenum; 4% to 7% of tungsten; 0.4% to 0.6% of vanadium; and the balance of cobalt. The alloy material provided by the embodiments of the application has a relatively high elastic modulus and elongation.

Description

Technical Field

[0001] This application relates to the field of electronics, specifically to an alloy material and its preparation method, structural components, and electronic equipment. Background Technology

[0002] Alloy materials are used to manufacture structural components and other parts for electronic devices. In related technologies, alloy materials with high elastic modulus have low plasticity and low elongation; alloy materials with high plasticity and elongation have low elastic modulus, making it difficult to achieve both high elastic modulus and high plasticity. Summary of the Invention

[0003] This application provides an alloy material with high elastic modulus and elongation.

[0004] In a first aspect, embodiments of this application provide an alloy material, the alloy material comprising, by mass fraction:

[0005] 26% to 30% chromium;

[0006] 5% to 8% molybdenum;

[0007] 4% to 7% tungsten;

[0008] 0.4% to 0.6% vanadium; and

[0009] The remaining amount of cobalt.

[0010] Secondly, embodiments of this application provide a method for preparing an alloy material, the method comprising:

[0011] Provide blanks;

[0012] The blank is degreased and sintered to obtain an intermediate product; and

[0013] The intermediate product is subjected to hot isostatic pressing to obtain the alloy material; wherein the alloy material comprises, by mass fraction: 26% to 30% chromium, 5% to 8% molybdenum, 4% to 7% tungsten, 0.4% to 0.6% vanadium, and the balance cobalt.

[0014] Thirdly, embodiments of this application provide a structural component, the structural component comprising the alloy material described in embodiments of this application, or the structural component being prepared by the method for preparing the alloy material described in embodiments of this application.

[0015] Fourthly, embodiments of this application provide an electronic device, which includes the structural components described in embodiments of this application.

[0016] The alloy material in this embodiment comprises, by mass fraction: 26% to 30% chromium (Cr), 5% to 8% molybdenum (Mo), 4% to 7% tungsten (W), 0.4% to 0.6% vanadium (V), and the balance cobalt (Co). Through the design of the composition and content of the alloy material, the alloy material exhibits high elastic modulus, high tensile strength, high yield strength, and high elongation. Attached Figure Description

[0017] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a schematic flowchart of a method for preparing an alloy material according to an embodiment of this application.

[0019] Figure 2 This is a schematic flowchart of a method for preparing a blank according to an embodiment of this application.

[0020] Figure 3 This is a schematic diagram of the structure of a water vapor atomization device according to an embodiment of this application.

[0021] Figure 4 This is a scanning electron microscope image of alloy powder according to an embodiment of this application.

[0022] Figure 5 This is a schematic diagram of the degreasing and sintering process according to an embodiment of this application.

[0023] Figure 6 This is a schematic diagram of the sintering process curve according to an embodiment of this application.

[0024] Figure 7 This is a schematic diagram of the first sintering process according to an embodiment of this application.

[0025] Figure 8 This is a schematic diagram of the second sintering process according to an embodiment of this application.

[0026] Figure 9 This is a schematic diagram of a rapid cooling process according to an embodiment of this application.

[0027] Figure 10 This is a schematic flowchart of a method for preparing an alloy material according to another embodiment of this application.

[0028] Figure 11 This is a schematic diagram of the heat treatment process according to an embodiment of this application.

[0029] Figure 12This is a metallographic microscope image of the intermediate product (i.e., the sintered product) of Example 1.

[0030] Figure 13 This is a structural schematic diagram of a structural component according to an embodiment of this application.

[0031] Figure 14 This is a schematic flowchart illustrating a method for preparing a structural component according to an embodiment of this application.

[0032] Figure 15 This is a schematic diagram of the structure of an electronic device according to an embodiment of this application, wherein the foldable frame is in a folded state.

[0033] Figure 16 yes Figure 15 Enlarged view of dashed box I.

[0034] Figure 17 This is a schematic diagram of the structure of an electronic device according to an embodiment of this application, wherein the foldable frame is in a flattened state.

[0035] Figure 18 This is a circuit block diagram of an electronic device according to an embodiment of this application.

[0036] Explanation of reference numerals in the attached figures:

[0037] 400 - Structural component, 500 - Electronic device, 510 - Flexible display screen, 520 - Foldable mid-frame, 521 - First mid-frame, 522 - Second mid-frame, 523 - Hinge, 530 - Processor, 540 - Memory, 550 - Camera module. Detailed Implementation

[0038] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present application.

[0039] The terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or apparatuses.

[0040] The technical solutions in the embodiments of this application will now be described with reference to the accompanying drawings.

[0041] It should be noted that, for ease of explanation, the same reference numerals denote the same components in the embodiments of this application, and for the sake of brevity, detailed descriptions of the same components are omitted in different embodiments.

[0042] Alloy materials are used to manufacture structural components and other parts for electronic devices. In related technologies, alloy materials with high elastic modulus have low plasticity and low elongation; alloy materials with high plasticity and elongation have low elastic modulus, making it difficult to achieve both high elastic modulus and high plasticity.

[0043] This application provides an alloy material, which comprises, by mass fraction:

[0044] 26% to 30% chromium (Cr);

[0045] 5% to 8% molybdenum (Mo);

[0046] 4% to 7% tungsten (W);

[0047] 0.4% to 0.6% vanadium (V); and

[0048] The balance is cobalt (Co).

[0049] In the embodiments of this application, when the numerical range a to b is involved, unless otherwise specified, the numerical value can be any value between a and b, including the endpoint value a and the endpoint value b.

[0050] Optionally, the mass fraction of cobalt (Co) in the alloy material ranges from 53.45% to 64.6%. Specifically, the mass fraction of cobalt in the alloy material can be, but is not limited to, 53.45%, 55%, 56%, 57%, 58%, 59%, 60%, 61%, 62%, 63%, 64%, and 64.6%. Cobalt is the matrix element of the alloy material, forming a cobalt-based solid solution with a face-centered cubic crystal structure. This provides the alloy material with good toughness and a certain strength, and provides a matrix for the solid solution and carbide formation of other elements (such as Cr and Mo), coordinating the effects of each element and balancing the overall performance of the alloy material. A low cobalt mass fraction in an alloy can increase its elastic modulus, but it reduces its toughness and strength (such as yield strength and tensile strength). Furthermore, an excessively low cobalt mass fraction results in excessively high mass fractions of other elements (such as Cr and Mo), leading to an excessively high density. This is detrimental to weight reduction when the alloy is used in structural components for electronic devices. Conversely, an excessively high cobalt mass fraction results in excessively low mass fractions of other elements (such as Cr and Mo), leading to larger grain boundaries and a tendency for grain boundary imbalance, which reduces the alloy's elastic modulus, strength, and toughness (and thus reduces elongation).

[0051] Specifically, the mass fraction of chromium (Cr) in the alloy material can be, but is not limited to, 26%, 26.5%, 27%, 27.5%, 28%, 28.5%, 29%, 29.5%, 30%, etc. Chromium is crucial for the corrosion resistance of the alloy material. Chromium readily forms a dense chromium oxide (Cr2O3) passivation film on the surface of the alloy material, preventing direct contact between the substrate and corrosive media (such as water, acids, alkalis, etc.), significantly improving the alloy material's resistance to uniform corrosion and localized corrosion (such as pitting corrosion and crevice corrosion). If the mass fraction of chromium in the alloy material is too low, the corrosion resistance and strength of the alloy material will decrease. Increasing the mass fraction of chromium in the alloy material will increase the elastic modulus of the alloy material; however, it is prone to causing grain boundary segregation, reducing the strength and plasticity of the alloy material.

[0052] Specifically, the mass fraction of molybdenum (Mo) in the alloy material can be, but is not limited to, 5%, 5.2%, 5.4%, 5.6%, 5.8%, 6%, 6.2%, 6.4%, 6.6%, 6.8%, 7%, 7.2%, 7.4%, 7.6%, 7.8%, and 8%. Molybdenum can dissolve in a cobalt-based matrix, strengthening the matrix through lattice distortion and improving the room temperature and high temperature strength of the alloy material. Molybdenum can also inhibit grain growth at high temperatures, maintaining the structural stability of the alloy material, making it suitable for applications requiring high-temperature loads. The synergistic effect of molybdenum and chromium can enhance the corrosion resistance of the alloy material, especially in reducing media (such as hydrochloric acid and sulfuric acid), where molybdenum can improve the alloy material's resistance to localized corrosion and reduce the formation of corrosion pits. Furthermore, molybdenum in the alloy material can form molybdenum carbides (such as Mo2C), which, together with chromium carbides, can further enhance the hardness and wear resistance of the alloy material, while refining the grains and improving the toughness of the alloy material. If the molybdenum mass fraction in the alloy is too low, it will reduce the corrosion resistance and strength of the alloy, and will not be conducive to improving the toughness of the alloy. If the molybdenum mass fraction in the alloy is too high, there will be an excess of molybdenum in the alloy. The excess molybdenum cannot be dissolved into the cobalt matrix (i.e., some molybdenum cannot form a cobalt-molybdenum alloy), which will reduce the strength and plasticity of the alloy.

[0053] Specifically, the mass fraction of tungsten (W) in the alloy material can be, but is not limited to, 4%, 4.2%, 4.4%, 4.6%, 4.8%, 5%, 5.2%, 5.4%, 5.6%, 5.8%, 6%, 6.2%, 6.4%, 6.6%, 6.8%, 7%, etc. When tungsten is dissolved in a cobalt-based matrix, its large atomic radius (the atomic radius of tungsten is...) contributes to its high efficiency. The atomic radius of cobalt is The presence of tungsten (W) in the alloy produces strong lattice distortion, significantly improving the high-temperature strength and creep resistance of the alloy. Simultaneously, W segregates at grain boundaries, hindering abnormal grain growth at high temperatures and maintaining a fine-grained structure. This allows for a better balance between the strength and toughness of the alloy, while also increasing its corrosion resistance and wear resistance. However, if the tungsten mass fraction in the alloy is too low, it will reduce the elastic modulus, hindering its improvement. Conversely, if the tungsten mass fraction is too high, it will be difficult for tungsten to completely dissolve in the cobalt matrix, reducing the alloy's strength and plasticity.

[0054] Specifically, the mass fraction of vanadium (V) in the alloy material can be, but is not limited to, 0.4%, 0.42%, 0.44%, 0.46%, 0.48%, 0.50%, 0.52%, 0.54%, 0.56%, 0.58%, 0.6%, etc. Vanadium can refine grains. During the smelting of the alloy material base and the production of alloy powder, vanadium forms vanadium oxide. Vanadium oxide decomposes at high temperatures, producing independent vanadium and oxygen. The oxygen reacts with carbon in the alloy material to generate CO or CO2, thereby reducing the carbon content of the alloy material and improving its strength and elongation. If the mass fraction of vanadium in the alloy material is too low, it is not conducive to reducing the carbon content of the alloy material and is not conducive to improving the strength and toughness of the alloy material. If the mass fraction of vanadium in the alloy material is too high, it will cause grain boundary precipitation and grain boundary segregation in the alloy material, reducing the strength and plasticity of the alloy material.

[0055] The alloy material in this embodiment comprises, by mass fraction: 26% to 30% chromium (Cr), 5% to 8% molybdenum (Mo), 4% to 7% tungsten (W), 0.4% to 0.6% vanadium (V), and the balance cobalt (Co). Through the design of the composition and content of the alloy material, the alloy material exhibits high elastic modulus, high tensile strength, high yield strength, and high elongation.

[0056] In some embodiments, the alloy material further includes impurity elements, which include at least one of carbon, silicon, manganese, and oxygen.

[0057] In some embodiments, the mass fraction of carbon in the alloy material is less than or equal to 0.1%. Specifically, the mass fraction of carbon in the alloy material can be, but is not limited to, less than or equal to 0.1%, less than or equal to 0.09%, less than or equal to 0.08%, less than or equal to 0.07%, less than or equal to 0.06%, less than or equal to 0.05%, less than or equal to 0.04%, less than or equal to 0.03%, less than or equal to 0.02%, less than or equal to 0.018%, less than or equal to 0.015%, etc. If the mass fraction of carbon in the alloy material is too high, impurity phases such as tungsten carbide and chromium carbide are likely to exist in the alloy material, reducing the strength and plasticity of the alloy material.

[0058] In some embodiments, the mass fraction of silicon in the alloy material is less than or equal to 0.4%. Specifically, the mass fraction of silicon in the alloy material can be, but is not limited to, less than or equal to 0.4%, less than or equal to 0.35%, less than or equal to 0.3%, less than or equal to 0.25%, less than or equal to 0.2%, less than or equal to 0.15%, less than or equal to 0.1%, less than or equal to 0.05%, etc. Adding a certain amount of silicon to the raw materials during alloy material preparation can reduce the oxygen content in the resulting alloy material and improve its elastic modulus, strength, and plasticity. However, if the mass fraction of silicon in the alloy material is too high, it will reduce the strength and plasticity of the alloy material.

[0059] In some embodiments, the mass fraction of manganese in the alloy material is less than or equal to 0.05%. Specifically, the mass fraction of manganese in the alloy material can be, but is not limited to, less than or equal to 0.05%, less than or equal to 0.04%, less than or equal to 0.03%, less than or equal to 0.02%, less than or equal to 0.01%, etc. An excessively high mass fraction of manganese in the alloy material reduces its elastic modulus, strength, and plasticity.

[0060] In some embodiments, the mass fraction of oxygen in the alloy material is less than or equal to 0.4%. Specifically, the mass fraction of oxygen in the alloy material can be, but is not limited to, less than or equal to 0.4%, less than or equal to 0.35%, less than or equal to 0.3%, less than or equal to 0.25%, less than or equal to 0.2%, less than or equal to 0.15%, less than or equal to 0.1%, less than or equal to 0.05%, etc. If the mass fraction of oxygen in the alloy material is too high, oxygen will react with vanadium, tungsten, etc., making it impossible for vanadium, tungsten, and other metals to alloy with cobalt, thus reducing the elastic modulus, strength, and plasticity of the alloy material.

[0061] In summary, the alloy material of this application has a low level of impurity elements, thereby exhibiting high elastic modulus, tensile strength, yield strength, hardness, and elongation.

[0062] In some embodiments, the elastic modulus of the alloy material ranges from 250 GPa to 320 GPa. Specifically, the elastic modulus of the alloy material can be, but is not limited to, 250 GPa, 260 GPa, 270 GPa, 280 GPa, 290 GPa, 300 GPa, 310 GPa, 320 GPa, etc.

[0063] In some embodiments, the elongation of the alloy material ranges from 8% to 15%. Specifically, the elongation of the alloy material can be, but is not limited to, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, etc.

[0064] The alloy material of this application has a high elastic modulus and a high elongation, making it suitable for applications requiring both high elastic modulus and impact resistance.

[0065] In some embodiments, the density of the alloy material is in the range of 9.1 g / cm³. 3 Up to 9.3 g / cm 3 Specifically, the density of the alloy material can be, but is not limited to, 9.1 g / cm³. 3 9.12 g / cm 3 9.14 g / cm 3 9.16 g / cm 3 9.18 g / cm 3 9.2g / cm 3 9.22g / cm 3 9.24 g / cm 3 9.26 g / cm 3 9.28g / cm 3 9.3g / cm 3 wait.

[0066] In some embodiments, the yield strength of the alloy material ranges from 1100 MPa to 1400 MPa. Specifically, the yield strength of the alloy material can be, but is not limited to, 1100 MPa, 1150 MPa, 1200 MPa, 1250 MPa, 1300 MPa, 1350 MPa, 1400 MPa, etc. The alloy material of this application embodiment has a high yield strength, thus it can be better applied to structural components of electronic devices with high requirements for yield strength and impact resistance.

[0067] In some embodiments, the tensile strength of the alloy material ranges from 1200 MPa to 1600 MPa. Specifically, the tensile strength of the alloy material can be, but is not limited to, 1200 MPa, 1250 MPa, 1300 MPa, 1350 MPa, 1400 MPa, 1450 MPa, 1500 MPa, 1550 MPa, 1600 MPa, etc. The alloy material of this application embodiment has high tensile strength, thus it can be better applied to structural components of electronic devices with high requirements for tensile and impact resistance.

[0068] In some embodiments, the Vickers hardness of the alloy material ranges from 440 HV to 520 HV. Specifically, the Vickers hardness of the alloy material can be, but is not limited to, 440 HV, 450 HV, 460 HV, 470 HV, 480 HV, 490 HV, 500 HV, 510 HV, 520 HV, etc. The alloy material of this application has a high Vickers hardness, thereby exhibiting good wear resistance.

[0069] In summary, the alloy material of this application has high tensile strength, yield strength, elastic modulus and Vickers hardness, and also has high elongation.

[0070] In some embodiments, the raw materials for the alloy material include alloy powder.

[0071] Understandably, the alloy material of this application is made from alloy powder through processes such as metal injection molding (MIM), debinding, sintering, hot isostatic pressing, and heat treatment.

[0072] In some embodiments, the D10 particle size of the alloy powder ranges from D10 to 3 μm. The D50 particle size of the alloy powder ranges from 5 μm to 8 μm. The D90 particle size of the alloy powder ranges from 14 μm to 18 μm.

[0073] "D10" refers to the particle size at which the cumulative volume distribution of particles is 10%, meaning that particles smaller than this size account for 10% of the total volume of all particles.

[0074] "D50" refers to the particle size at which the cumulative volumetric particle size distribution percentage of a sample reaches 50%. Physically, it means that 50% of the particles are larger than D50, and 50% are smaller. D50 is also called the median diameter or median particle size.

[0075] "D90" refers to the particle size at which 90% of the cumulative volume distribution of particles is achieved. That is, particles smaller than this size account for 90% of the total volume of all particles.

[0076] Specifically, the D10 particle size of the alloy powder can be, but is not limited to, 1μm, 1.3μm, 1.5μm, 1.8μm, 2μm, 2.3μm, 2.5μm, 2.8μm, 3μm, etc.

[0077] Specifically, the D50 particle size of the alloy powder can be, but is not limited to, 5.0μm, 5.3μm, 5.5μm, 5.8μm, 6μm, 6.3μm, 6.5μm, 6.8μm, 7μm, 7.3μm, 7.5μm, 7.8μm, 8μm, etc.

[0078] Specifically, the D90 particle size of the alloy powder can be, but is not limited to, 14μm, 14.5μm, 15μm, 15.5μm, 16μm, 16.5μm, 17μm, 17.5μm, 18μm, etc.

[0079] In this embodiment, if the particle size of the alloy powder is too small, its flowability will be poor, affecting the injection molding of the alloy powder. In addition, it will be detrimental to the deoxidation and decarburization process during the preparation of the alloy material, reducing the elastic modulus, strength, and elongation of the alloy material. If the particle size of the alloy powder is too large, it will reduce the density of the obtained alloy material, which will also reduce the elastic modulus, strength, and elongation of the alloy material.

[0080] In some embodiments, the mass fraction of silicon in the alloy powder ranges from 0.7% to 1.5%. Specifically, the mass fraction of silicon in the alloy powder can be, but is not limited to, 0.7%, 0.8%, 0.9%, 1.0%, 1.1%, 1.2%, 1.3%, 1.4%, 1.5%, etc. During the preparation of alloy materials from alloy powder, adding a certain amount of silicon can reduce the oxygen content in the resulting alloy material, thereby improving its elastic modulus, strength, and plasticity. If the mass fraction of silicon in the alloy powder is too low, it is not conducive to reducing the oxygen content in the resulting alloy material; if the mass fraction of silicon in the alloy powder is too high, it will result in an excessively high silicon content in the resulting alloy material, reducing its strength and plasticity.

[0081] Optionally, the tap density of the alloy powder is greater than or equal to 4.5 g / cm³. 3 Furthermore, the tap density of the alloy powder is in the range of 4.5 g / cm³. 3 Up to 4.9 g / cm 3 Specifically, the tap density of the alloy powder can be, but is not limited to, 4.5 g / cm³. 3 4.55gcm 3 4.6g / cm 3 4.65g / cm 3 4.7g / cm 3 4.75g / cm 3 4.8g / cm 3 4.85g / cm 3 4.9g / cm 3 If the tap density of the alloy powder is too high, it indicates that the particle size of the alloy powder is too small. This reduces flowability, affects the injection molding of the alloy powder, and is also detrimental to deoxidation and decarburization during the alloy material preparation process, thus reducing the elastic modulus, strength, and elongation of the alloy material. If the tap density of the alloy powder is too low, it indicates that the particle size of the alloy powder is too large, reducing the density of the obtained alloy material, which also reduces the elastic modulus, strength, and elongation of the alloy material.

[0082] Optionally, the specific surface area of ​​the alloy powder is in the range of 400 m². 2 / g to 500m 2 / g. Specifically, the specific surface area of ​​the alloy powder can be, but is not limited to, 400m².2 / g、420m 2 / g、440m 2 / g、460m 2 / g、480m 2 / g、500m 2 / g etc. If the specific surface area of ​​the alloy powder is too small, the particle size of the alloy powder will be too large, reducing the density of the obtained alloy material, and also reducing the elastic modulus, strength and elongation of the alloy material. If the specific surface area of ​​the alloy powder is too large, the particle size of the alloy powder will be too small, resulting in poor flowability, affecting the injection molding of the alloy powder. In addition, it is not conducive to deoxidation and decarburization during the alloy material preparation process, reducing the elastic modulus, strength and elongation of the alloy material.

[0083] The alloy materials of this application embodiment can be prepared by the methods described in the following embodiments of this application. In addition, they can also be prepared by other methods. The preparation methods of this application embodiment are merely one or more preparation methods of the alloy materials of this application and should not be construed as limiting the alloy materials provided in the embodiments of this application.

[0084] Figure 1 This is a schematic flowchart of a method for preparing an alloy material according to an embodiment of this application.

[0085] Please see Figure 1 This application also provides a method for preparing an alloy material, the method comprising:

[0086] S101, provides blanks;

[0087] S102, the blank is degreased and sintered to obtain an intermediate product; and

[0088] S103, the intermediate product is subjected to hot isostatic pressing to obtain the alloy material; wherein the alloy material comprises, by mass fraction: 26% to 30% chromium, 5% to 8% molybdenum, 4% to 7% tungsten, 0.4% to 0.6% vanadium and the balance cobalt.

[0089] In some embodiments, the alloy material further includes impurity elements, which include at least one of carbon, silicon, manganese, and oxygen.

[0090] In some embodiments, the mass fraction of carbon in the alloy material is less than or equal to 0.1%.

[0091] In some embodiments, the mass fraction of silicon in the alloy material is less than or equal to 0.4%.

[0092] In some embodiments, the mass fraction of manganese in the alloy material is less than or equal to 0.05%.

[0093] In some embodiments, the mass fraction of oxygen in the alloy material is less than or equal to 0.4%.

[0094] For detailed descriptions of alloy materials, chromium, molybdenum, tungsten, vanadium, cobalt, carbon, silicon, manganese, oxygen, and other aspects, please refer to the descriptions in the corresponding sections of the above embodiments, which will not be repeated here.

[0095] The alloy material prepared by the method of this application comprises, by mass fraction: 26% to 30% chromium (Cr), 5% to 8% molybdenum (Mo), 4% to 7% tungsten (W), 0.4% to 0.6% vanadium (V), and the balance cobalt (Co). Through the design of the composition and content of the alloy material, the alloy material exhibits high elastic modulus, high tensile strength, high yield strength, and high elongation. Furthermore, in the preparation method of the alloy material of this application, after degreasing and sintering the billet, the obtained intermediate product is then subjected to hot isostatic pressing. This better heals defects such as pores within the intermediate product, improves the densification of the obtained alloy material, and further enhances the strength and elongation of the obtained alloy. Moreover, the alloy material preparation method of the embodiments of this application is applicable to the manufacture of precision and complex structural parts in the 3C field.

[0096] Figure 2 This is a schematic flowchart of a method for preparing a blank according to an embodiment of this application.

[0097] Please see Figure 2 In some embodiments, in S101, providing the blank includes:

[0098] S1011 provides alloy base material;

[0099] In some embodiments, the alloy base material comprises, by mass fraction: 26% to 30% chromium, 5% to 8% molybdenum, 4% to 7% tungsten, 0.4% to 0.6% vanadium, and the balance cobalt.

[0100] In other embodiments, the alloy base material comprises, by mass fraction: 26% to 30% chromium, 5% to 8% molybdenum, 4% to 7% tungsten, 0.4% to 0.6% vanadium, 0.7% to 1.5% silicon, and the balance cobalt.

[0101] Optionally, the alloy base material further includes impurity elements, including at least one of carbon, oxygen, and manganese.

[0102] For detailed descriptions of other elements such as chromium, molybdenum, tungsten, vanadium, cobalt, silicon, carbon, oxygen, and manganese, please refer to the descriptions in the corresponding sections of the above embodiments, which will not be repeated here.

[0103] S1012 involves melting the alloy base material, atomizing it with water and air, and screening it to obtain alloy powder.

[0104] Optionally, the alloy base material is melted using electron beam layer manufacturing (EBLM) to form an alloy liquid. The alloy liquid is then crushed using an inert gas (such as at least one of nitrogen, argon, or helium), followed by two high-pressure water treatments for further refinement. The alloy powder, after being atomized by both water and air, is then subjected to airflow screening to obtain alloy powder with a preset particle size. In this embodiment, the three impacts (one with inert gas and two with high-pressure water) slow down the descent of the alloy liquid, allowing more time for spheroidization before solidification. This results in alloy powder that is closer to a spherical shape and has better sphericity. The three impacts also result in smaller particle sizes and higher tap density. Airflow screening can control the morphology and particle size of the alloy powder. In this embodiment, electron beam layer manufacturing is used for melting, which better ensures the purity of the obtained alloy material.

[0105] Water-air integrated atomization equipment such as Figure 3 As shown. A scanning electron microscope image of the alloy powder according to an embodiment of this application is shown below. Figure 4 As shown.

[0106] In some embodiments, the alloy powder comprises, by mass fraction: 26% to 30% chromium, 5% to 8% molybdenum, 4% to 7% tungsten, 0.4% to 0.6% vanadium, and the balance cobalt.

[0107] In other embodiments, the alloy powder comprises, by mass fraction: 26% to 30% chromium, 5% to 8% molybdenum, 4% to 7% tungsten, 0.4% to 0.6% vanadium, 0.7% to 1.5% silicon, and the balance cobalt.

[0108] Specifically, the mass fraction of silicon in the alloy powder can be, but is not limited to, 0.7%, 0.8%, 0.9%, 1.0%, 1.1%, 1.2%, 1.3%, 1.4%, and 1.5%. In the process of preparing alloy materials from alloy powder, adding a certain amount of silicon can reduce the oxygen content in the resulting alloy material, thereby improving its elastic modulus, strength, and plasticity. If the mass fraction of silicon in the alloy powder is too low, it will not effectively reduce the oxygen content in the resulting alloy material; if the mass fraction of silicon in the alloy powder is too high, it will result in an excessively high silicon content in the resulting alloy material, reducing its strength and plasticity.

[0109] Optionally, the alloy powder may also include impurity elements, including at least one of carbon, oxygen, and manganese.

[0110] For detailed descriptions of other elements such as chromium, molybdenum, tungsten, vanadium, cobalt, silicon, carbon, oxygen, and manganese, please refer to the descriptions in the corresponding sections of the above embodiments, which will not be repeated here.

[0111] In some embodiments, the D10 particle size of the alloy powder ranges from D10 ≤ 3 μm. The D50 particle size ranges from 5 μm ≤ D50 ≤ 8 μm. The D90 particle size ranges from 14 μm ≤ D90 ≤ 18 μm. Specifically, the D10 particle size of the alloy powder can be, but is not limited to, 1 μm, 1.3 μm, 1.5 μm, 1.8 μm, 2 μm, 2.3 μm, 2.5 μm, 2.8 μm, 3 μm, etc. Specifically, the D50 particle size of the alloy powder can be, but is not limited to, 5.0 μm, 5.3 μm, 5.5 μm, 5.8 μm, 6 μm, 6.3 μm, 6.5 μm, 6.8 μm, 7 μm, 7.3 μm, 7.5 μm, 7.8 μm, 8 μm, etc. Specifically, the D90 particle size of the alloy powder can be, but is not limited to, 14μm, 14.5μm, 15μm, 15.5μm, 16μm, 16.5μm, 17μm, 17.5μm, 18μm, etc. In this embodiment, if the particle size of the alloy powder is too small, the flowability is poor, affecting the injection molding of the alloy powder. In addition, it is not conducive to deoxidation and decarburization during the alloy material preparation process, reducing the elastic modulus, strength, and elongation of the alloy material. If the particle size of the alloy powder is too large, the density of the obtained alloy material is reduced, which also reduces the elastic modulus, strength, and elongation of the alloy material.

[0112] Optionally, the tap density of the alloy powder is greater than or equal to 4.4 g / cm³. 3 Furthermore, the tap density of the alloy powder is in the range of 4.5 g / cm³. 3 Up to 4.9 g / cm 3 Specifically, the tap density of the alloy powder can be, but is not limited to, 4.4 g / cm³. 3 4.48 g / cm 3 4.5g / cm 3 4.55g / cm 3 4.6g / cm 3 4.65g / cm 3 4.7g / cm 3 4.75g / cm 3 4.8g / cm 3 4.85g / cm 3 4.9g / cm 3 If the tap density of the alloy powder is too high, it indicates that the particle size of the alloy powder is too small. This reduces flowability, affects the injection molding of the alloy powder, and is also detrimental to deoxidation and decarburization during the alloy material preparation process, thus reducing the elastic modulus, strength, and elongation of the alloy material. If the tap density of the alloy powder is too low, it indicates that the particle size of the alloy powder is too large, reducing the density of the obtained alloy material, which also reduces the elastic modulus, strength, and elongation of the alloy material.

[0113] Optionally, the specific surface area of ​​the alloy powder is in the range of 400 m². 2 / g to 500m 2 / g. Specifically, the specific surface area of ​​the alloy powder can be, but is not limited to, 400m². 2 / g、420m 2 / g、440m 2 / g、460m 2 / g、480m 2 / g、500m 2 / g etc. If the specific surface area of ​​the alloy powder is too small, the particle size of the alloy powder will be too large, reducing the density of the obtained alloy material, and also reducing the elastic modulus, strength and elongation of the alloy material. If the specific surface area of ​​the alloy powder is too large, the particle size of the alloy powder will be too small, resulting in poor flowability, affecting the injection molding of the alloy powder. In addition, it is not conducive to deoxidation and decarburization during the alloy material preparation process, reducing the elastic modulus, strength and elongation of the alloy material.

[0114] S1013, The alloy powder and binder are kneaded together to obtain the feedstock; and

[0115] Optionally, the alloy powder is mixed with a binder and then mixed using a mixing device (such as Changfeng's mixing device) to obtain the feed.

[0116] Optionally, the adhesive comprises, by weight fraction, 40% polyoxymethylene (POM), 35% polyethylene wax (PEW), and 25% zinc stearate.

[0117] Optionally, the theoretical volume shrinkage rate of the feed is controlled at 1.165±0.03.

[0118] S1014, the feed material is injection molded (also known as injection molding) to obtain a blank.

[0119] Alternatively, the feedstock can be placed inside an injection molding machine (e.g., a Nissei-110T injection molding machine), and an appropriate mold can be used based on the part's structural design to perform injection molding and obtain a blank. After injection molding, the feedstock must completely fill the mold and show no holes under X-ray.

[0120] Figure 5 This is a schematic diagram of the degreasing and sintering process according to an embodiment of this application. Figure 6 This is a schematic diagram of the sintering process curve according to an embodiment of this application.

[0121] Please see Figure 5 and Figure 6 In some embodiments, S102, the sintering includes a first sintering, a second sintering, and a third sintering; the blank is degreased and sintered to obtain an intermediate product, including:

[0122] S1021, Degrease the blank to obtain a degreased blank;

[0123] Optionally, the blank is placed in a nitric acid degreasing furnace for nitric acid degreasing, controlling the degreasing rate to be greater than or equal to 7.6 wt% (e.g., degreasing rates of 7.6 wt%, 7.65 wt%, 7.7 wt%, 7.75 wt%, 7.8 wt%, 7.85 wt%, 7.9 wt%, etc.) to ensure effective removal of organic matter (i.e., binder) before sintering. Nitric acid can react with polyoxymethylene (POM), and the resulting product (i.e., gas) is carried out by nitrogen gas, thereby achieving the purpose of removing POM from the blank. After degreasing, the part should be broken open, and there should be no defects such as hard lumps in the core.

[0124] Understandably, the degreasing effect of the blank is controlled by adjusting the degreasing rate.

[0125] Optionally, the degreasing of the blank includes:

[0126] (1) Place the blank in a nitric acid degreasing furnace. The furnace temperature range is 120°C to 140°C (for example, but not limited to 120°C, 125°C, 130°C, 135°C, 140°C, etc.), and the fan speed is 40 R / min to 60 R / min.

[0127] (2) Introduce a nitrogen flow with a temperature of 120℃ to 140℃ (e.g., but not limited to 120℃, 125℃, 130℃, 135℃, 140℃, etc.), and the flow rate of the nitrogen flow is 3m³ / h. 3 / h to 5m 3 / h (for example, it can be, but is not limited to, 3m) 3 / h, 3.5m 3 / h、4m 3 / h, 4.5m 3 / h、5m 3 / h, etc.), to perform pre-rinsing on the blank, the rinsing time is 40min to 50min (for example, it can be, but is not limited to, 40min, 45min, 50min, etc.);

[0128] (3) The flow rate is 3m³ 3 / h to 5m 3 A nitrogen gas flow of / h is introduced, and nitric acid gas of the first flow rate is introduced to perform degreasing for 110 min to 130 min (e.g., 110 min, 120 min, 130 min, etc.), with the first flow rate ranging from 5 g / min to 8 g / min (e.g., 5 g / min, 6 g / min, 7 g / min, 8 g / min, etc.).

[0129] (4) The flow rate is 3m³ 3 / h to 5m3 A nitrogen gas flow of / h is introduced, and a second flow of nitric acid gas is introduced to perform degreasing for 340 min to 380 min (e.g., 340 min, 360 min, 380 min, etc.), wherein the second flow rate is in the range of 5 g / min to 8 g / min (e.g., 5 g / min, 6 g / min, 7 g / min, 8 g / min, etc.);

[0130] (5) The flow rate is 3m³ 3 / h to 5m 3 A nitrogen gas stream of [flow rate] / h is introduced, along with a third flow rate of nitric acid gas, for degreasing for 160 to 200 minutes (e.g., 160 min, 180 min, 200 min, etc.). The third flow rate ranges from 5 g / min to 8 g / min (e.g., 5 g / min, 6 g / min, 7 g / min, 8 g / min, etc.). The first, second, and third flow rates can be all the same, all different, or partially the same and partially different.

[0131] (6) Stop the flow of nitric acid gas; the flow rate is 3m³ / h. 3 / h to 5m 3 A nitrogen flow rate of / h is used for post-rinsing, which includes a first sub-stage and a second sub-stage. The first sub-stage lasts for 28 to 32 minutes, and the second sub-stage lasts for 14 to 16 minutes.

[0132] S1022, the degreased blank is placed at a temperature of 360°C to 620°C for the first sintering;

[0133] Understandably, the first sintering stage is a negative pressure degreasing stage, meaning that the first sintering is carried out under negative pressure for degreasing. The vacuum degree of the first sintering is less than or equal to 5 kPa, and the vacuum degree of the first sintering can be, but is not limited to, 0, 1 kPa, 2 kPa, 3 kPa, 4 kPa, or 5 kPa.

[0134] Optionally, the first sintering is carried out in a first reducing gas atmosphere.

[0135] Optionally, the first reducing gas can be, but is not limited to, hydrogen, such as high-purity hydrogen (H2) with a purity greater than or equal to 99.99%. H2 can react with carbon to generate organic gases such as methane, reducing the carbon content in the degreased blank. In addition, it can prevent carbon from reacting with metals such as chromium, cobalt, and tungsten to generate chromium carbide, cobalt carbide, and tungsten carbide. These impurity phases are very stable at high temperatures and are not easily decomposed. Moreover, these impurities cannot be miscible with the base material of the alloy material. Therefore, these impurity phases will form defect sources or stress concentration points in the alloy material. When subjected to external forces, stress concentration is easily generated at the impurity sites, reducing the strength and elongation of the alloy material.

[0136] Optionally, during the first sintering, the flow rate of the first reducing gas ranges from 15 L / min to 50 L / min; specifically, during the first sintering, the flow rate of the first reducing gas can be, but is not limited to, 15 L / min, 16 L / min, 17 L / min, 18 L / min, 19 L / min, 20 L / min, 25 L / min, 30 L / min, 35 L / min, 40 L / min, 45 L / min, 50 L / min, etc.

[0137] Specifically, the temperature of the first sintering can be, but is not limited to, 360℃, 380℃, 400℃, 420℃, 440℃, 460℃, 480℃, 500℃, 520℃, 540℃, 560℃, 580℃, 600℃, and 620℃. If the temperature of the first sintering is too low, the binder will not be completely removed; if the temperature of the first sintering is too high, the binder is prone to reaction and residual carbon may remain, resulting in incomplete removal.

[0138] In this embodiment, placing the degreased blank at a temperature of 360°C to 620°C for the first sintering can crack the residual carbon in the binder, which is beneficial for removing the binder from the degreased blank and for improving the strength and elongation of the obtained alloy material.

[0139] Figure 7 This is a schematic diagram of the first sintering process according to an embodiment of this application.

[0140] Please see also Figure 5 and Figure 7 Optionally, in S1022, the degreased blank is placed at a temperature of 360°C to 620°C for a first sintering, including:

[0141] S10221, is subjected to first sintering at a temperature of 360℃ to 400℃;

[0142] Optionally, the temperature is increased to 360°C to 400°C at a heating rate of 3.5°C / min to 4.6°C / min (e.g., but not limited to 3.5°C / min, 3.6°C / min, 3.8°C / min, 4.0°C / min, 4.2°C / min, 4.4°C / min, 4.6°C / min, etc.).

[0143] Specifically, the temperature for the first sintering can be, but is not limited to, 360℃, 370℃, 380℃, 390℃, 400℃, etc.

[0144] Optionally, the holding time for the first sintering can range from 20 min to 60 min. Specifically, the holding time for the first sintering can be, but is not limited to, 20 min, 30 min, 40 min, 50 min, 60 min, etc.

[0145] S10222, subjected to a second sintering at a temperature of 460℃ to 500℃; and

[0146] Optionally, the temperature is increased to 460°C to 500°C at a heating rate of 1°C / min to 3°C / min (e.g., but not limited to 1°C / min, 1.15°C / min, 1.3°C / min, 1.5°C / min, 1.8°C / min, 2.0°C / min, 2.3°C / min, 2.5°C / min, 2.8°C / min, 3°C / min, etc.).

[0147] Specifically, the sintering temperature of the second sub-sinter can be, but is not limited to, 460℃, 470℃, 480℃, 490℃, 500℃, etc.

[0148] Optionally, the holding time for the second sintering can range from 60 min to 180 min. Specifically, the holding time for the second sintering can be, but is not limited to, 60 min, 75 min, 90 min, 105 min, 120 min, 135 min, 150 min, 165 min, 180 min, etc.

[0149] S10223 is subjected to third-stage sintering at a temperature of 580℃ to 620℃.

[0150] Optionally, the temperature is increased to 580°C to 620°C at a rate of 1°C / min to 3°C / min (e.g., but not limited to 1°C / min, 1.15°C / min, 1.3°C / min, 1.5°C / min, 1.8°C / min, 2.0°C / min, 2.3°C / min, 2.5°C / min, 2.8°C / min, 3°C / min, etc.).

[0151] Specifically, the sintering temperature of the third component can be, but is not limited to, 580℃, 590℃, 600℃, 610℃, 620℃, etc.

[0152] Optionally, the holding time for the third sintering can range from 60 min to 180 min. Specifically, the holding time for the third sintering can be, but is not limited to, 60 min, 75 min, 90 min, 105 min, 120 min, 135 min, 150 min, 165 min, 180 min, etc.

[0153] It should be noted that the flow rates of the first reducing gas introduced during the first, second, and third sub-sintering processes can be the same, different, or partially the same and partially different.

[0154] Understandably, the first sintering includes the first sub-sintering, the second sub-sintering, and the third sub-sintering.

[0155] In this embodiment, the first sintering is carried out in three stages, which makes the temperature inside the furnace more uniform and facilitates the removal of the binder.

[0156] S1023 is placed at a temperature of 880℃ to 1200℃ for a second sintering;

[0157] Understandably, the second sintering stage is a vacuum deoxidation and decarburization stage. It can also be understood that the second sintering stage is a medium-low temperature sintering stage.

[0158] Optionally, the second sintering is carried out under negative pressure. The vacuum degree of the second sintering is less than or equal to 5 kPa, and the vacuum degree of the second sintering can be, but is not limited to, 0, 1 kPa, 2 kPa, 3 kPa, 4 kPa, or 5 kPa.

[0159] Specifically, the second sintering temperature can be, but is not limited to, 880℃, 900℃, 920℃, 940℃, 960℃, 980℃, 1000℃, 1020℃, 1040℃, 1060℃, 1080℃, 1100℃, 1120℃, 1140℃, 1160℃, 1180℃, 1200℃, etc. In this embodiment, if the second sintering temperature is too low, the resulting intermediate product will not be thoroughly deoxidized and decarburized. Furthermore, it will reduce the densification degree of the intermediate product, thus decreasing the strength and elongation of the resulting alloy material. If the second sintering temperature is too high, the outer surface of the degreased blank after the first sintering will densify first, followed by the middle portion. The gas in the middle portion will be difficult to expel, making it easy for pores to remain in the middle portion of the resulting intermediate product, resulting in uneven densification.

[0160] Optionally, the second sintering is carried out in a mixed gas atmosphere of the second reducing gas and the first inert gas;

[0161] Optionally, the second reducing gas can be, but is not limited to, hydrogen, such as high-purity hydrogen (H2) with a purity greater than or equal to 99.99%. H2 can react with carbon to generate organic gases such as methane, reducing the carbon content in the degreased blank. In addition, it can prevent carbon from reacting with metals such as chromium, cobalt, and tungsten to generate chromium carbide, cobalt carbide, and tungsten carbide. These impurity phases are very stable at high temperatures and are not easily decomposed. Moreover, these impurities cannot be miscible with the base material of the alloy material. Therefore, these impurity phases will form defect sources or stress concentration points in the alloy material. When subjected to external forces, stress concentration is easily generated at the impurity sites, reducing the strength and elongation of the alloy material.

[0162] Optionally, the first inert gas may be, but is not limited to, at least one of nitrogen, argon, helium, etc.

[0163] During the second sintering process, the degreased blank contains relatively little carbon and oxygen. Introducing argon gas can better prevent the oxidation of metals such as tungsten and chromium, inhibit chromium volatilization, and prevent abnormal grain growth, resulting in alloy materials with higher strength and elongation.

[0164] Optionally, the volume fraction of the second reducing gas in the mixed gas ranges from 5% to 10%. Specifically, the volume fraction of the second reducing gas in the mixed gas atmosphere can be, but is not limited to, 5%, 6%, 7%, 8%, 9%, 10%, etc.

[0165] Optionally, during the second sintering, the flow rate of the mixed gas ranges from 15 L / min to 50 L / min; specifically, during the second sintering, the flow rate of the mixed gas can be, but is not limited to, 15 L / min, 16 L / min, 17 L / min, 18 L / min, 19 L / min, 20 L / min, 25 L / min, 30 L / min, 35 L / min, 40 L / min, 45 L / min, 50 L / min, etc.

[0166] Figure 8 This is a schematic diagram of the second sintering process according to an embodiment of this application.

[0167] Please see also Figure 5 and Figure 8 Optionally, in S1023, a second sintering is performed at a temperature of 880°C to 1200°C, including:

[0168] S10231, subjected to fourth-stage sintering at a temperature of 880℃ to 980℃; and

[0169] Optionally, the temperature is increased to 880°C to 980°C at a heating rate of 2°C / min to 5°C / min (e.g., but not limited to 2°C / min, 2.5°C / min, 3°C / min, 3.5°C / min, 4.0°C / min, 4.5°C / min, 5°C / min, etc.).

[0170] Specifically, the sintering temperature of the fourth component can be, but is not limited to, 880℃, 900℃, 920℃, 940℃, 960℃, 980℃, etc.

[0171] Optionally, the holding time for the fourth sintering can range from 30 min to 90 min. Specifically, the holding time for the fourth sintering can be, but is not limited to, 30 min, 40 min, 50 min, 60 min, 70 min, 80 min, 90 min, etc.

[0172] S10232 was subjected to fifth sintering at a temperature of 1100℃ to 1200℃.

[0173] Optionally, the temperature is increased to 1100°C to 1200°C at a heating rate of 2°C / min to 5°C / min (e.g., but not limited to 2°C / min, 2.5°C / min, 3°C / min, 3.5°C / min, 4.0°C / min, 4.5°C / min, 5°C / min, etc.).

[0174] Specifically, the sintering temperature of the fifth component can be, but is not limited to, 1100℃, 1120℃, 1140℃, 1160℃, 1180℃, 1200℃, etc.

[0175] Optionally, the holding time for the fifth sintering can range from 30 min to 90 min. Specifically, the holding time for the fifth sintering can be, but is not limited to, 30 min, 40 min, 50 min, 60 min, 70 min, 80 min, 90 min, etc.

[0176] Understandably, the second sintering includes the fourth sub-sintering and the fifth sub-sintering.

[0177] In this embodiment, during the fourth sintering stage, the temperature is above the austenite transformation endpoint, allowing carbon and oxygen to further volatilize and resulting in higher material densification. During the fifth sintering stage, the high temperature causes the vanadium oxide formed during the smelting process to decompose, releasing free oxygen. This free oxygen can carry away carbon from the material, thus better reducing the carbon content of the resulting intermediate product. Furthermore, the second sintering is performed in two stages, which allows the degreased blank after the first sintering to densify from the center first, followed by densification of the outer surface, resulting in a higher degree of densification in the intermediate product and producing an alloy material with higher strength and elongation.

[0178] S1024 was subjected to a third sintering at a temperature of 1300℃ to 1350℃; and

[0179] Optionally, the temperature is increased to 1300°C to 1350°C at a heating rate of 2°C / min to 5°C / min (e.g., but not limited to 2°C / min, 2.5°C / min, 3°C / min, 3.5°C / min, 4.0°C / min, 4.5°C / min, 5°C / min, etc.).

[0180] Understandably, the third sintering stage is the densification stage. It can also be understood that the third sintering stage is the high-temperature sintering stage.

[0181] Optionally, the vacuum degree of the third sintering is less than or equal to 15 kPa, and the vacuum degree of the third sintering can be, but is not limited to, 0, 1 kPa, 2 kPa, 3 kPa, 4 kPa, 5 kPa, 8 kPa, 10 kPa, 13 kPa, 15 kPa, etc.

[0182] Optionally, the third sintering is carried out in a third reducing gas atmosphere, and the vacuum degree of the third sintering is 8 kPa to 20 kPa (e.g., 8 kPa, 10 kPa, 15 kPa, 20 kPa, etc.).

[0183] Optionally, the third reducing gas can be, but is not limited to, hydrogen, such as high-purity hydrogen (H2) with a purity greater than or equal to 99.99%. H2 can react with carbon to produce organic gases such as methane, reducing the carbon content in the degreased blank. In addition, it can prevent carbon from reacting with metals such as chromium, cobalt, and tungsten to form chromium carbide, cobalt carbide, and tungsten carbide. These impurity phases are very stable at high temperatures and are not easily decomposed. Moreover, these impurities cannot be miscible with the base material of the alloy material. Therefore, these impurity phases will form defect sources or stress concentration points in the alloy material. When subjected to external forces, stress concentration is easily generated at the impurity sites, reducing the strength and elongation of the alloy material.

[0184] Specifically, the temperature of the third sintering can be, but is not limited to, 1300℃, 1310℃, 1320℃, 1330℃, 1340℃, 1350℃, etc. If the temperature of the third sintering is too low, the densification degree of the obtained intermediate product will be reduced; if the temperature of the third sintering is too high, the grain size will easily grow abnormally, reducing the strength and elongation of the alloy material.

[0185] Optionally, the holding time for the third sintering can range from 120 min to 300 min. Specifically, the holding time for the third sintering can be, but is not limited to, 120 min, 150 min, 180 min, 200 min, 220 min, 240 min, 260 min, 280 min, 300 min, etc.

[0186] Optionally, during the third sintering, the flow rate of the third reducing gas ranges from 15 L / min to 60 L / min; specifically, the flow rate of the third reducing gas can be, but is not limited to, 15 L / min, 16 L / min, 17 L / min, 18 L / min, 19 L / min, 20 L / min, 25 L / min, 30 L / min, 35 L / min, 40 L / min, 45 L / min, 50 L / min, 55 L / min, 60 L / min, etc.

[0187] In this embodiment, the third sintering is carried out at 1300°C to 1350°C, which can maximize the densification of the intermediate product. At the same time, the introduction of a third reducing gas during the third sintering can better oxidize the metal elements in the alloy material.

[0188] It should be noted that the first sintering, the second sintering and the third sintering in this embodiment can all be carried out in a sintering furnace (e.g., a metal furnace, with a molybdenum heating element). The purpose of sintering is mainly to further deoxidize and decarburize, and at the same time to densify the blank so as to form the injection molded blank into a metal part (intermediate product).

[0189] Optionally, the density of the intermediate product obtained after sintering is greater than or equal to 9 g / cm³. 3 In one example, the density of the intermediate product obtained after sintering ranged from 9.05 g / cm³. 3 Up to 9.15 g / cm 3 .

[0190] S1025, rapid cooling, yields intermediate product.

[0191] Figure 9 This is a schematic diagram of a rapid cooling process according to an embodiment of this application.

[0192] Please see also Figure 5 and Figure 9 Optionally, in S1025, the rapid cooling includes:

[0193] S10251, a fourth reducing gas is introduced for rapid cooling to 800°C to 900°C; and

[0194] Optionally, the fourth reducing gas can be, but is not limited to, hydrogen, such as high-purity hydrogen (H2) with a purity greater than or equal to 99.99%. H2 can prevent carbon from reacting with metals such as chromium, cobalt, and tungsten to form chromium carbide, cobalt carbide, and tungsten carbide. These impurity phases are very stable at high temperatures and are not easily decomposed. Furthermore, these impurities cannot be miscible with the base material of the alloy. Therefore, these impurity phases will form defect sources or stress concentration points in the alloy material. When subjected to external forces, stress concentration is easily generated at the impurity sites, reducing the strength and elongation of the alloy material.

[0195] Specifically, a fourth reducing gas can be introduced to rapidly cool the temperature to 800℃, 820℃, 840℃, 860℃, 880℃, 900℃, etc.

[0196] Optionally, after cooling to 800°C to 900°C, the temperature is maintained for 30 to 90 minutes; specifically, it can be, but is not limited to, 30 minutes, 45 minutes, 60 minutes, 75 minutes, 90 minutes, etc.

[0197] S10252, introduce a second inert gas to rapidly cool to room temperature.

[0198] Optionally, the second inert gas may be, but is not limited to, at least one of nitrogen, argon, helium, etc.

[0199] In this embodiment, after the intermediate product is cooled to 800°C to 900°C, a second inert gas is introduced for rapid cooling to room temperature. This better prevents hydrogen embrittlement of the obtained intermediate product and allows for better control of the phase transition. Furthermore, rapid cooling better prevents the precipitation of dispersed phases at grain boundaries, improving the strength and elongation of the intermediate product.

[0200] In a specific example, the sintering process includes: heating the degreased blank to 380°C for 90 min and holding for 30 min for the first sub-sintering; heating to 480°C for 60 min and holding for 120 min for the second sub-sintering; heating to 600°C for 90 min and holding for 120 min for the third sub-sintering; heating to 900°C for 120 min and holding for 60 min for the fourth sub-sintering; heating to 1150°C for 60 min and holding for 60 min for the fifth sub-sintering; heating to 1320°C for 60 min and holding for 240 min for the third sub-sintering; rapidly cooling to 900°C for 60 min using hydrogen and holding for 60 min; introducing argon and rapidly cooling to room temperature for 60 min.

[0201] In some embodiments, S103, hot isostatic pressing is performed on the intermediate product, including: placing the intermediate product at a temperature of 1100°C to 1300°C and a pressure of 140MPa to 170MPa for hot isostatic pressing treatment.

[0202] Hot isostatic pressing (HIP) is an advanced material processing technology that applies high temperature and high pressure (isotropic pressure) to materials simultaneously to eliminate internal defects, increase density, and improve mechanical properties.

[0203] Alternatively, hot isostatic pressing can be performed using a HIP furnace from Steel Research Institute.

[0204] The intermediate products obtained after sintering cannot achieve 100% density; they all contain tiny pores (≤10μm), which severely affect the performance of the alloy material. These tiny pores act as stress concentration points within the alloy material. When the alloy is subjected to external forces, plastic or compressive deformation occurs along these pores, leading to grain boundary slippage and ultimately a macroscopic decrease in the alloy's strength or plasticity. This application employs hot isostatic pressing (HIP) on the intermediate products. The isotropic high pressure and high temperature process yields a near-fully dense alloy material with a uniform microstructure, effectively healing internal defects, especially in high-temperature refractory metals. This results in an alloy material with higher strength and elongation.

[0205] Optionally, the density of the intermediate product after hot isostatic pressing can reach 9.1 g / cm³. 3The above. In some embodiments, the density of the intermediate product after hot isostatic pressing ranges from 9.15 g / cm³. 3 Up to 9.25 g / cm 3 .

[0206] Specifically, the hot isostatic pressing (HIP) temperature can be, but is not limited to, 1100℃, 1110℃, 1120℃, 1130℃, 1140℃, 1150℃, 1160℃, 1180℃, 1200℃, 1220℃, 1240℃, 1260℃, 1280℃, and 1300℃. If the HIP temperature is too low, the intermediate product after HIP will lack density, have too many internal defects, and reduce the strength and elongation of the resulting alloy material. If the HIP temperature is too high, it will cause grain boundary defects and abnormal grain growth, resulting in reduced strength and plasticity of the final alloy material. Furthermore, if the HIP temperature is too high, the requirements for the HIP furnace increase, raising the production cost of martensitic steel.

[0207] Specifically, the pressure of hot isostatic pressing (HIP) can be, but is not limited to, 140 MPa, 145 MPa, 150 MPa, 155 MPa, 160 MPa, 165 MPa, and 170 MPa. If the HIP pressure is too low, the pores in the intermediate product cannot be effectively healed and repaired, resulting in insufficient densification of the intermediate product after HIP, which reduces the strength and elongation of the alloy material. If the HIP pressure is too high, it will cause grain boundary defects and abnormal grain growth, reducing the strength and plasticity of the final alloy material and making it prone to microcracks. In addition, if the HIP pressure is too high, the requirements for the HIP furnace will increase, and it may even become unbearable for the furnace, increasing the preparation cost of the alloy material.

[0208] Optionally, the holding time for hot isostatic pressing (HIP) ranges from 0.5 h to 2 h. Specifically, the holding time for HIP can be, but is not limited to, 0.5 h, 1 h, 1.5 h, 2 h, etc. If the holding time for HIP is too short, the intermediate product after HIP will not be dense enough, and there will be too many internal defects, reducing the strength and plasticity of the resulting alloy material. If the holding time for HIP is too long, it will cause grain boundary defects and abnormal grain growth, resulting in a decrease in the strength and plasticity of the final alloy material.

[0209] Figure 10 This is a schematic flowchart of a method for preparing an alloy material according to another embodiment of this application.

[0210] Please see Figure 10 This application provides a method for preparing an alloy material, the method comprising:

[0211] S201, provides blanks;

[0212] S202, the blank is degreased and sintered to obtain an intermediate product; and

[0213] S203, hot isostatic pressing is performed on the intermediate product;

[0214] For a detailed description of S201 to S203, please refer to the description of the corresponding parts of the above embodiments, which will not be repeated here.

[0215] S204 is subjected to heat treatment to obtain the alloy material.

[0216] The alloy material comprises, by mass fraction: 26% to 30% chromium, 5% to 8% molybdenum, 4% to 7% tungsten, 0.4% to 0.6% vanadium, and the balance cobalt.

[0217] For a detailed description of the alloy materials, chromium, molybdenum, tungsten, cobalt, etc., please refer to the description in the corresponding section of the above embodiments, which will not be repeated here.

[0218] Figure 11 This is a schematic diagram of the heat treatment process according to an embodiment of this application.

[0219] Please see also Figure 10 and Figure 11 Please see Figure 11 Optionally, in S204, the heat treatment includes:

[0220] S2041, undergo solution treatment;

[0221] Optionally, the intermediate product after hot isostatic pressing is placed at a temperature of 1050°C to 1150°C for solution treatment, and the holding time for solution treatment is 30 min to 120 min.

[0222] Specifically, the solution treatment temperature can be, but is not limited to, 1050℃, 1080℃, 1100℃, 1130℃, 1150℃, etc.

[0223] Specifically, the heat treatment holding time can be, but is not limited to, 30 min, 45 min, 60 min, 75 min, 90 min, 105 min, 120 min, etc.

[0224] In this embodiment, the intermediate product after hot isostatic pressing undergoes solution treatment. This process dissolves impurity elements and coarse metal carbides (such as chromium carbide, cobalt carbide, and tungsten carbide) in the intermediate product, allowing them to dissolve into the cobalt matrix and form a supersaturated solid solution. This solution is then homogenized, thereby improving the strength and elongation of the resulting alloy material. If the solution treatment temperature is too low or the time is too short, the dissolution of impurity elements and phases will be insufficient, limiting the improvement in the strength and elongation of the alloy material. Conversely, if the solution treatment temperature is too high or the time is too long, abnormal grain growth can occur, reducing the strength and elongation of the alloy material and increasing its production cost.

[0225] Optionally, the solution treatment is carried out under negative pressure, with the gas pressure of the solution treatment ≤0.1 kPa.

[0226] S2042, undergoes cryogenic treatment; and

[0227] Optionally, the intermediate product after solution treatment can be cooled to -196℃ to -180℃ (e.g., -180℃, -183℃, -185℃, -188℃, -190℃, -193℃, -196℃, etc.) using liquid nitrogen for cryogenic treatment. The holding time for cryogenic treatment is 60min to 180min (e.g., 60min, 80min, 100min, 120min, 140min, 160min, 180min, etc.).

[0228] In this embodiment, cryogenic treatment can better improve the tensile strength, yield strength and toughness of the resulting alloy material.

[0229] S2043, timeliness processing.

[0230] Optionally, the intermediate product after cryogenic treatment is placed at a temperature of 550°C to 650°C (e.g., but not limited to 550°C, 580°C, 600°C, 630°C, 650°C, etc.) for aging treatment, and the holding time of the aging treatment is 4h to 6h (e.g., but not limited to 4h, 4.5h, 5h, 5.5h, 6h, etc.), and then cooled with air.

[0231] In this embodiment, aging treatment can precipitate nanoscale strengthening phases, thereby increasing the tensile strength, yield strength and toughness of the resulting alloy material.

[0232] Optionally, after the alloy material of this application is prepared, it can be surface treated according to actual needs, such as polishing, passivation, coloring, etc.

[0233] The alloy materials of this application will be further described below through specific embodiments.

[0234] Example 1

[0235] The alloy material in this embodiment is prepared through the following steps:

[0236] (1) Provide alloy base material, and melt the alloy base material using electron beam laminar flow smelting, followed by air jet crushing, two high-pressure water refining processes, and then sieving to obtain alloy powder; wherein, the particle size distribution and parameters of the alloy powder are shown in Table 1 below:

[0237] Table 1. Parameters of the alloy powder in Example 1

[0238] D10 D50 D90 Tap density Specific surface area 2.245μm 6.898μm 16.12μm <![CDATA[4.48g / cm 3 ]]> <![CDATA[438.1m 2 / g]]>

[0239] (2) The alloy powder and binder are mixed and kneaded to obtain the feed; wherein the binder includes 40% polyoxymethylene (POM), 35% polyethylene wax (PEW) and 25% zinc stearate by mass fraction.

[0240] (3) The feed material is injected into the mold using an injection molding machine to obtain a preform with a density of 5.4 g / cm³. 3 ;

[0241] (4) Place the blank in a nitric acid degreasing furnace for nitric acid degreasing to obtain a degreased blank; wherein the degreasing rate is greater than or equal to 7.75%, and the process parameters for nitric acid degreasing are shown in Table 2 below;

[0242] Table 2. Process parameters for nitric acid degreasing in Example 1

[0243]

[0244] (5) Sintering includes: i) placing the degreased blank in a sintering furnace at a pressure of 0 kPa, introducing hydrogen gas at a flow rate of 35 L / min, and heating the degreased blank to 380°C for 30 min after 90 min to perform the first sub-sinter; ii) adjusting the hydrogen flow rate to 45 L / min, heating the blank to 480°C for 120 min after 60 min to perform the second sub-sinter; iii) heating the blank to 600°C for 120 min after 90 min to perform the third sub-sinter; iv) introducing a mixed gas of hydrogen and argon (with a hydrogen volume fraction of 5%) at a flow rate of 30 L / min, and heating the blank to 600°C for 120 min to perform the third sub-sinter. v) The temperature was raised to 900℃ and held for 60 min for the fourth sintering; v) The temperature was raised to 1150℃ and held for 60 min for the fifth sintering; vi) Hydrogen gas was introduced at a flow rate of 50 L / min, and the temperature was raised to 1320℃ and held for 240 min at a pressure of 10 kPa for 60 min for the third sintering; vii) Hydrogen gas was introduced at a pressure of 10 kPa and a flow rate of 50 L / min, and the temperature was rapidly cooled to 900℃ and held for 60 min at a pressure of 86 kPa, and argon gas was introduced, and the temperature was rapidly cooled to room temperature for 60 min to obtain the intermediate product; the metallographic micrograph of the sintered product (i.e., the intermediate product) is shown in the figure. Figure 12 As shown.

[0245] (6) The intermediate product was placed at a temperature of 1150℃ and a pressure of 155MPa for hot isostatic pressing, and the holding time was 1h.

[0246] (7) The intermediate product after hot isostatic pressing is placed at a temperature of 1100℃ for solution treatment, and the heat treatment time is 60min.

[0247] (8) The intermediate product after solution treatment was cooled to -196℃ using liquid nitrogen for cryogenic treatment, and the holding time for cryogenic treatment was 60 minutes; and

[0248] (9) The intermediate product after cryogenic treatment is placed at a temperature of 600℃ for aging treatment. The holding time of the aging treatment is 4h, and the alloy material is obtained by cooling.

[0249] The components and mass fraction of each component in the alloy material prepared in Example 1 are shown in Table 3 below.

[0250] Table 3. Composition of the alloy material in Example 1

[0251] Components Cr Mo W V C Si Mn O Co Quality fraction (%) 28.5 6.8 6.4 0.54 0.0067 0.25 0.03 0.32 margin

[0252] The alloy material obtained in Example 1 was subjected to the following performance tests.

[0253] (1) Tensile strength test: The test shall be conducted in accordance with GB / T 228.1-2010.

[0254] (2) Yield strength test: The test shall be performed in accordance with GBT228.1-2010.

[0255] (3) Elongation test: Measured according to GBT228.1-2010.

[0256] (4) Elastic modulus test: The measurement shall be carried out in accordance with GBT228.1-2010.

[0257] (5) Vickers hardness test: The test shall be performed in accordance with GB / T 4340.1.

[0258] The performance of the alloy materials prepared in the four examples 1 was tested, and the performance parameters of each sample are shown in Table 4 below.

[0259] Table 4 shows the performance parameters of the four alloy material samples from Example 1.

[0260] sample Elastic modulus (GPa) Yield strength (MPa) Tensile strength (MPa) Elongation (%) Vickers hardness (HV) Sample 1 262 1240 1382 10.3 499 Sample 2 272 1250 1410 11.2 478 Sample 3 259 1310 1445 10.3 515 Sample 4 280 1262 1432 13.1 481 average value 268.3 1265.5 1417.3 11.2 493.3

[0261] Examples 2 to 10, Comparative Examples 1 to 12

[0262] The difference between the various embodiments and comparative examples and Example 1 lies in the different contents of each component in the resulting alloy materials. The component contents and performance parameters of each embodiment and comparative example are shown in Tables 5 and 6 below.

[0263] Comparative Example 13

[0264] The difference between this comparative example and Example 1 is that argon gas was introduced during sintering, but hydrogen gas was not introduced.

[0265] Comparative Example 14

[0266] The difference between this comparative example and Example 1 is that this comparative example was slowly cooled to room temperature after sintering.

[0267] Table 5. Composition of alloy materials from Examples 2 to 10 and Comparative Examples 1 to 14

[0268]

[0269]

[0270] Table 6 Performance parameters of the alloy materials of Examples 2 to 10 and Comparative Examples 1 to 14

[0271]

[0272] The test results from Examples 1 to 10 show that when the content of each component of the alloy material is within the range of this application, the alloy material has a higher elastic modulus, higher tensile strength, higher yield strength, higher hardness and higher elongation.

[0273] The test results from Examples 2 to 4 show that as the mass fraction of chromium in the alloy material increases, the elastic modulus and tensile strength of the alloy material first gradually decrease and then gradually increase; the yield strength of the alloy material first gradually increases and then gradually decreases; the elongation of the alloy material gradually decreases; and the Vickers hardness of the alloy material gradually increases.

[0274] The test results from Examples 2, 1, and 2 show that when the mass fraction of chromium in the alloy is too low (as in Comparative Example 1), the elastic modulus and yield strength of the alloy decrease, while the tensile strength, elongation, and Vickers hardness increase. When the mass fraction of chromium in the alloy is too high (as in Comparative Example 2), the yield strength and elongation of the alloy decrease significantly, while the elastic modulus, tensile strength, and Vickers hardness increase. When the mass fraction of chromium in the alloy is between 26% and 30%, the alloy can achieve a balance of high elastic modulus, high tensile strength, high yield strength, high elongation, and high Vickers hardness.

[0275] The test results of Examples 2, 5 and 6 show that as the mass fraction of molybdenum in the alloy material increases, the elastic modulus of the alloy material first gradually increases and then gradually decreases; the tensile strength and elongation of the alloy material first gradually decrease and then gradually increase; and the yield strength and Vickers hardness of the alloy material gradually decrease.

[0276] The test results from Examples 2, 3, and 4 show that when the mass fraction of molybdenum in the alloy material is too low (as in Comparative Example 3), the elastic modulus, tensile strength, yield strength, and Vickers hardness of the alloy material all decrease, while the elongation increases. When the mass fraction of molybdenum in the alloy material is too high (as in Comparative Example 4), the elastic modulus of the alloy material decreases slightly, the elongation decreases significantly, and the tensile strength, yield strength, and Vickers hardness all increase. When the mass fraction of molybdenum in the alloy material is between 5% and 8%, the alloy material can achieve a balance of high elastic modulus, high tensile strength, high yield strength, high elongation, and high Vickers hardness.

[0277] The test results of Examples 2, 7 and 8 show that as the mass fraction of tungsten in the alloy material increases, the elastic modulus and Vickers hardness of the alloy material gradually decrease; the tensile strength of the alloy material first gradually decreases and then gradually increases; the yield strength of the alloy material first gradually increases and then gradually decreases; and the elongation of the alloy material gradually increases.

[0278] The test results from Examples 2, 5, and 6 show that when the mass fraction of tungsten in the alloy material is too low (as in Comparative Example 5), the elastic modulus, yield strength, and elongation of the alloy material all decrease, while the tensile strength and Vickers hardness increase. When the mass fraction of tungsten in the alloy material is too high (as in Comparative Example 6), the tensile strength and yield strength of the alloy material decrease, the elongation and Vickers hardness decrease significantly, and the elastic modulus of the alloy material increases. When the mass fraction of tungsten in the alloy material is between 4% and 7%, the alloy material can achieve a balance of high elastic modulus, high tensile strength, high yield strength, high elongation, and high Vickers hardness.

[0279] The test results of Examples 2, 9 and 10 show that as the mass fraction of vanadium in the alloy increases, the elastic modulus, tensile strength and Vickers hardness of the alloy first gradually decrease and then gradually increase; the yield strength and elongation of the alloy first gradually increase and then gradually decrease.

[0280] The test results from Examples 2, 7, and 8 show that when the vanadium mass fraction in the alloy is too low (e.g., in Comparative Example 7), the tensile strength, yield strength, elongation, and Vickers hardness of the alloy all decrease, while the elastic modulus increases slightly. When the vanadium mass fraction in the alloy is too high (e.g., in Comparative Example 8), the yield strength, elongation, and Vickers hardness of the alloy all decrease, the tensile strength increases, and the elastic modulus remains unchanged. When the vanadium mass fraction in the alloy is between 0.4% and 0.6%, the alloy can achieve a balance of high elastic modulus, high tensile strength, high yield strength, high elongation, and high Vickers hardness.

[0281] The test results of Example 2 and Comparative Example 9 show that when the mass fraction of carbon in the alloy material is high (Comparative Example 9), the elastic modulus, yield strength, elongation, and Vickers hardness of the alloy material all decrease, while the tensile strength of the alloy material increases. When the mass fraction of carbon in the alloy material is less than or equal to 0.02%, the alloy material can achieve a balance of high elastic modulus, high tensile strength, high yield strength, high elongation, and high Vickers hardness.

[0282] The test results from Example 2 and Comparative Example 10 show that when the mass fraction of silicon in the alloy material is too high (Comparative Example 10), the elastic modulus, yield strength, elongation, and Vickers hardness of the alloy material all decrease, while the tensile strength of the alloy material increases. When the mass fraction of silicon in the alloy material is less than or equal to 0.4%, the alloy material can achieve a balance of high elastic modulus, high tensile strength, high yield strength, high elongation, and high Vickers hardness.

[0283] The test results of Example 2 and Comparative Example 11 show that when the mass fraction of manganese in the alloy material is too high (Comparative Example 11), the elastic modulus, yield strength, elongation, and Vickers hardness of the alloy material all decrease, while the tensile strength of the alloy material increases. When the mass fraction of manganese in the alloy material is less than or equal to 0.05%, the alloy material can achieve a balance of high elastic modulus, high tensile strength, high yield strength, high elongation, and high Vickers hardness.

[0284] The test results from Example 2 and Comparative Example 12 show that when the mass fraction of oxygen in the alloy material is too high (Comparative Example 12), the elastic modulus, yield strength, elongation, and Vickers hardness of the alloy material all decrease, while the tensile strength of the alloy material increases. When the mass fraction of oxygen in the alloy material is less than or equal to 0.4%, the alloy material can achieve a balance of high elastic modulus, high tensile strength, high yield strength, high elongation, and high Vickers hardness.

[0285] As can be seen from the test results of Example 2 and Comparative Example 13, when hydrogen is not introduced as a reducing gas during sintering in the preparation process of the alloy material, the elastic modulus, tensile strength, yield strength and Vickers hardness of the alloy material are reduced, while the elongation of the alloy material is slightly increased.

[0286] As can be seen from the test results of Example 2 and Comparative Example 14, when the alloy material is slowly cooled to room temperature after sintering during the preparation process, the yield strength, elongation and Vickers hardness of the alloy material are reduced, while the elastic modulus and tensile strength of the alloy material are slightly increased.

[0287] Figure 13 This is a structural schematic diagram of a structural component 400 according to an embodiment of this application.

[0288] Please see Figure 13 This application also provides a structural component 400, which includes the alloy material described in this application embodiment, or the structural component 400 is prepared by the alloy material preparation method of this application embodiment.

[0289] Optionally, the structural component 400 may be, but is not limited to, a pivot (e.g., the pivot of a foldable device), a housing, a middle frame, a button, a hinge, a gear, a middle plate, a pivot ramp, or other load-bearing components. In this application... Figure 13 In the accompanying drawings, structural component 400 is illustrated using the inclined plate or middle plate of the pivot as an example, and should not be construed as a limitation on structural component 400 of this application.

[0290] Optionally, the electronic device may be, but is not limited to, a mobile phone, tablet computer, laptop computer, desktop computer, smart bracelet, smartwatch, e-reader, game console, etc.

[0291] For a detailed description of other aspects of the alloy material, please refer to the description of the corresponding section of the above embodiments, which will not be repeated here.

[0292] In some embodiments, the structural component 400 comprises, by mass fraction: 26% to 30% chromium (Cr); 5% to 8% molybdenum (Mo); 4% to 7% tungsten (W); 0.4% to 0.6% vanadium (V); and the balance cobalt (Co). The structural component 400 of this application embodiment comprises an alloy material, which, by mass fraction, comprises: 26% to 30% chromium (Cr), 5% to 8% molybdenum (Mo), 4% to 7% tungsten (W), 0.4% to 0.6% vanadium (V), and the balance cobalt (Co). Through the design of the composition and content of the structural component 400, the structural component 400 possesses a high elastic modulus, high tensile strength, high yield strength, and high elongation.

[0293] For detailed descriptions of other components such as chromium, molybdenum, tungsten, vanadium, and cobalt, please refer to the descriptions in the corresponding sections of the above embodiments, which will not be repeated here.

[0294] In some embodiments, the structural component 400 further includes impurity elements, which include at least one of carbon, silicon, manganese, and oxygen.

[0295] In some embodiments, the carbon mass fraction in the structural component 400 is less than or equal to 0.1%.

[0296] In some embodiments, the mass fraction of silicon in the structural component 400 is less than or equal to 0.4%.

[0297] In some embodiments, the mass fraction of manganese in the structural component 400 is less than or equal to 0.05%.

[0298] In some embodiments, the mass fraction of oxygen in the structural member 400 is less than or equal to 0.4%.

[0299] For detailed descriptions of carbon, silicon, manganese, oxygen, and other components, please refer to the descriptions in the corresponding sections of the above embodiments; they will not be repeated here.

[0300] In some embodiments, the elastic modulus of the structural member 400 ranges from 250 GPa to 320 GPa. Specifically, the elastic modulus of the structural member 400 can be, but is not limited to, 250 GPa, 260 GPa, 270 GPa, 280 GPa, 290 GPa, 300 GPa, 310 GPa, 320 GPa, etc.

[0301] In some embodiments, the elongation of the structural member 400 ranges from 8% to 15%. Specifically, the elongation of the structural member 400 can be, but is not limited to, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, etc.

[0302] The structural component 400 of this application has a high elastic modulus and a high elongation, making it suitable for applications requiring both high elastic modulus and impact resistance.

[0303] In some embodiments, the density of the structural member 400 ranges from 9.1 g / cm³. 3 Up to 9.3 g / cm 3 Specifically, the density of the structural component 400 can be, but is not limited to, 9.1 g / cm³. 3 9.12 g / cm 3 9.14 g / cm 3 9.16 g / cm 3 9.18 g / cm 3 9.2g / cm 3 9.22g / cm 3 9.24 g / cm 3 9.26 g / cm 3 9.28g / cm 3 9.3g / cm 3 wait.

[0304] In some embodiments, the yield strength of the structural member 400 ranges from 1100 MPa to 1400 MPa. Specifically, the yield strength of the structural member 400 can be, but is not limited to, 1100 MPa, 1150 MPa, 1200 MPa, 1250 MPa, 1300 MPa, 1350 MPa, 1400 MPa, etc. The structural member 400 of this application embodiment has a high yield strength, thus it can be better applied to structural members of electronic devices with high requirements for yield strength, impact resistance, and other performance characteristics.

[0305] In some embodiments, the tensile strength of the structural component 400 ranges from 1300 MPa to 1600 MPa. Specifically, the tensile strength of the structural component 400 can be, but is not limited to, 1300 MPa, 1350 MPa, 1400 MPa, 1450 MPa, 1500 MPa, 1550 MPa, 1600 MPa, etc. The structural component 400 of this application embodiment has high tensile strength, thus it can be better applied to structural components of electronic devices with high requirements for tensile and impact resistance.

[0306] In some embodiments, the Vickers hardness of the structural component 400 ranges from 440 HV to 520 HV. Specifically, the Vickers hardness of the structural component 400 can be, but is not limited to, 440 HV, 450 HV, 460 HV, 470 HV, 480 HV, 490 HV, 500 HV, 510 HV, 520 HV, etc. The structural component 400 of this application has a high Vickers hardness, thereby exhibiting good wear resistance.

[0307] In summary, the structural component 400 of this application has high tensile strength, yield strength, elastic modulus and Vickers hardness, and also has high elongation.

[0308] Figure 14 This is a schematic flowchart of a method for preparing a structural component 400 according to an embodiment of this application.

[0309] Please see Figure 14 In some embodiments, the method for preparing the structural component 400 of this application includes:

[0310] S301, provides blanks;

[0311] S302, the blank is degreased and sintered to obtain an intermediate product; and

[0312] S303, hot isostatic pressing is performed on the intermediate product;

[0313] S304, heat treatment is performed to obtain the structural component 400, wherein the heat treatment includes solution treatment; cryogenic treatment; aging treatment; the structural component 400 comprises, by mass fraction: 26% to 30% chromium, 5% to 8% molybdenum, 4% to 7% tungsten, 0.4% to 0.6% vanadium and the balance cobalt.

[0314] The structural component 400 prepared by the method of this application comprises, by mass fraction: 26% to 30% chromium (Cr), 5% to 8% molybdenum (Mo), 4% to 7% tungsten (W), 0.4% to 0.6% vanadium (V), and the balance cobalt (Co). Through the design of the composition and content of the structural component 400, the structural component 400 exhibits high elastic modulus, high tensile strength, high yield strength, and high elongation. Furthermore, in the preparation method of the structural component 400 of this application, after degreasing and sintering the blank, the resulting intermediate product is then subjected to hot isostatic pressing. This better heals defects such as pores within the intermediate product, improves the densification degree of the prepared structural component 400, and further enhances the strength and elongation of the resulting alloy. Moreover, the preparation method of the structural component 400 of this application is applicable to the manufacture of precision and complex structural feature parts in the 3C field.

[0315] For detailed descriptions of S301-S304, please refer to the corresponding descriptions in the above embodiments; they will not be repeated here. For a detailed description of the composition of structural component 400, please refer to the description of the corresponding alloy material; they will not be repeated here.

[0316] Figure 15 This is a schematic diagram of the structure of an electronic device 500 according to an embodiment of this application, wherein the foldable frame is in a folded state. Figure 16 yes Figure 15 Enlarged view of dashed box I.

[0317] Please see Figure 15 and Figure 16 This application embodiment also provides an electronic device 500, which includes the structural component 400 described in this application embodiment, the structural component 400 serving as a force-bearing component of the electronic device 500.

[0318] The electronic device 500 in this application embodiment can be, but is not limited to, a mobile phone, a foldable phone, a tablet computer, a foldable tablet computer, a laptop computer, a desktop computer, a smart bracelet, a smartwatch, smart glasses, an e-reader, a game console, and other portable electronic devices 500. The electronic device 500 described in this embodiment is merely one form of the electronic device 500 used in the structural component 400. Figure 15 The accompanying drawings illustrate an electronic device 500 (taking a foldable electronic device 500 as an example) and a structural component 400 (taking the pivot 523 of the foldable electronic device 500 as an example). They should not be construed as limiting the electronic device 500 provided in this application, nor should they be construed as limiting the structural component 400 provided in the various embodiments of this application.

[0319] For a detailed description of structural component 400, please refer to the description of the corresponding part of the above embodiment, which will not be repeated here.

[0320] Figure 17 This is a schematic diagram of the structure of an electronic device 500 according to an embodiment of this application, wherein the foldable frame is in a flattened state. Figure 18 This is a circuit block diagram of an electronic device 500 according to an embodiment of this application.

[0321] Please see also Figures 15 to 18In some embodiments, the electronic device 500 is a foldable electronic device 500, which includes a flexible display screen 510, a foldable mid-frame 520, and a processor 530. The foldable mid-frame 520 is used to support the flexible display screen 510 and drive the flexible display screen 510 to fold or flatten. The foldable mid-frame 520 includes a first mid-frame 521, a pivot 523, and a second mid-frame 522. The first mid-frame 521 and the second mid-frame 522 are used to support the non-bendable area of ​​the flexible display screen 510, and the pivot 523 is used to support the bendable area of ​​the flexible display screen 510. The first mid-frame 521 and the second mid-frame 522 can rotate relative to the pivot 523 in a direction that moves closer to or further away from each other. The processor 530 is electrically connected to the flexible display screen 510 and is used to control the flexible display screen 510 to display. The pivot 523 includes the structural component 400 of this application embodiment.

[0322] The foldable electronic device 500 of this application embodiment includes at least one of foldable mobile phones, foldable tablets, foldable e-readers, foldable laptops, etc.

[0323] Understandably, the first middle frame 521, the hinge 523, and the second middle frame 522 cooperate to support the flexible display screen 510; the foldable middle frame 520 has a folded state (e.g., Figure 15 (as shown) and flattened state (as shown) Figure 17 As shown, when the foldable middle frame 520 is in the flattened state, the first middle frame 521, the pivot 523 and the second middle frame 522 form a planar structure; when the foldable middle frame 520 is in the folded state, the first middle frame 521 and the second middle frame 522 overlap or stack.

[0324] Optionally, processor 530 includes one or more general-purpose processors, wherein the general-purpose processor can be any type of device capable of processing electronic instructions, including a central processing unit (CPU), microprocessor, microcontroller, main processor, controller, and ASIC, etc. Processor 530 is used to execute various types of digital storage instructions, such as software or firmware programs stored in memory 540, which enables the computing device to provide a wide range of services.

[0325] In some embodiments, the electronic device 500 of this application further includes a memory 540. The memory 540 is electrically connected to the processor 530. The memory 540 is used to store program code required for the processor 530 to run, program code required for controlling the flexible display screen 510, and the display content of the flexible display screen 510, etc.

[0326] Optionally, memory 540 may include volatile memory, such as random access memory (RAM); memory 540 may also include non-volatile memory (NVM), such as read-only memory (ROM), flash memory (FM), hard disk drive (HDD), or solid-state drive (SSD). Memory 540 may also include combinations of the above types of memory 540.

[0327] In some embodiments, the electronic device 500 of this application further includes a camera module 550, which is electrically connected to a processor 530 and is used to take pictures under the control of the processor 530. Optionally, the camera module 550 can be at least one of a front-facing camera module 550 and a rear-facing camera module 550.

[0328] In this application, the terms "embodiment" and "implementation" mean that a specific feature, structure, or characteristic described in connection with an embodiment can be included in at least one embodiment of this application. The appearance of these phrases in various locations throughout the specification does not necessarily refer to the same embodiment, nor are they independent or alternative embodiments mutually exclusive with other embodiments. Those skilled in the art will understand, explicitly and implicitly, that the embodiments described in this application can be combined with other embodiments. Furthermore, it should be understood that the features, structures, or characteristics described in the various embodiments of this application can be arbitrarily combined to form yet another embodiment that does not depart from the spirit and scope of the technical solution of this application, provided there is no contradiction between them.

[0329] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application and are not intended to limit it. Although this application has been described in detail with reference to the above preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions to the technical solutions of this application should not depart from the spirit and scope of the technical solutions of this application.

Claims

1. An alloy material, characterized in that, The alloy material, by mass fraction, comprises: 26% to 30% chromium; 5% to 8% molybdenum; 4% to 7% tungsten; 0.4% to 0.6% vanadium; and The remaining cobalt; The elastic modulus of the alloy material ranges from 250 GPa to 320 GPa; the elongation of the alloy material ranges from 8% to 15%; the density of the alloy material ranges from 9.1 g / cm³ to 9.3 g / cm³; and the Vickers hardness of the alloy material ranges from 440 HV to 520 HV.

2. The alloy material according to claim 1, characterized in that, The alloy material further includes impurity elements, which include at least one of carbon, silicon, manganese, and oxygen; the alloy material satisfies at least one of the following conditions: The mass fraction of carbon in the alloy material is less than or equal to 0.1%; The mass fraction of silicon in the alloy material is less than or equal to 0.4%; The mass fraction of manganese in the alloy material is less than or equal to 0.05%; and The mass fraction of oxygen in the alloy material is less than or equal to 0.4%.

3. The alloy material according to claim 1, characterized in that, The alloy material satisfies at least one of the following conditions: The yield strength of the alloy material ranges from 1100 MPa to 1400 MPa; and The tensile strength of the alloy material ranges from 1200 MPa to 1600 MPa.

4. The alloy material according to any one of claims 1-3, characterized in that, The raw materials of the alloy material include alloy powder, wherein the D10 particle size of the alloy powder is in the range of: D10≤3μm; the D50 particle size of the alloy powder is in the range of: 5μm≤D50≤8μm; and the D90 particle size of the alloy powder is in the range of: 14μm≤D90≤18μm.

5. The alloy material according to claim 4, characterized in that, The mass fraction of silicon in the alloy powder ranges from 0.7% to 1.5%.

6. A method for preparing an alloy material, characterized in that, The preparation method includes: Providing a blank includes: melting an alloy base material to obtain alloy powder; and mixing the alloy powder with a binder and injection molding to obtain the blank; The blank is degreased and sintered to obtain an intermediate product; and The intermediate product is subjected to hot isostatic pressing to obtain the alloy material; wherein the alloy material comprises, by mass fraction: 26% to 30% chromium, 5% to 8% molybdenum, 4% to 7% tungsten, 0.4% to 0.6% vanadium, and the balance cobalt.

7. The method for preparing the alloy material according to claim 6, characterized in that, The sintering includes a first sintering, a second sintering, and a third sintering; the process of degreasing and sintering the blank to obtain an intermediate product includes: The blank is degreased with nitric acid to obtain a degreased blank; The degreased blank is placed at a temperature of 360°C to 620°C for the first sintering; The second sintering is carried out at a temperature of 880℃ to 1200℃. The material was placed at a temperature of 1300℃ to 1350℃ for a third sintering process; and Rapid cooling yields an intermediate product.

8. The method for preparing the alloy material according to claim 7, characterized in that, The first sintering is carried out in a first reducing gas atmosphere; The degreased blank is placed at a temperature of 360°C to 620°C for a first sintering, including: The first sintering was carried out at a temperature of 360℃ to 400℃. The second sintering was carried out at a temperature of 460°C to 500°C; and The third sintering is carried out at a temperature of 580℃ to 620℃.

9. The method for preparing the alloy material according to claim 7, characterized in that, The second sintering is carried out in a mixed gas atmosphere of the second reducing gas and the first inert gas; The second sintering process is carried out at a temperature of 880℃ to 1200℃, including: The fourth sintering was carried out at a temperature of 880℃ to 980℃. as well as The fifth sintering was carried out at a temperature of 1100℃ to 1200℃.

10. The method for preparing the alloy material according to claim 7, characterized in that, The third sintering is carried out in a third reducing gas atmosphere; And / or, The rapid cooling includes: Rapidly cool to 800°C to 900°C by introducing a fourth reducing gas; and A second inert gas was introduced to rapidly cool the mixture to room temperature.

11. The method for preparing the alloy material according to any one of claims 6 to 10, characterized in that, The hot isostatic pressing of the intermediate product includes: The intermediate product was subjected to hot isostatic pressing at a temperature of 1100°C to 1300°C and a pressure of 140MPa to 170MPa. And / or, After hot isostatic pressing, the preparation method further includes: The heat treatment includes: solution treatment, cryogenic treatment, and aging treatment.

12. A structural component, characterized in that, The structural component comprises the alloy material according to any one of claims 1-5, or the structural component is prepared by the method of preparing the alloy material according to any one of claims 6-11.

13. An electronic device, characterized in that, The electronic device includes the structural component as described in claim 12.

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