Semiconductor laser stack array and preparation method thereof

Abstract

The invention relates to the technical field of semiconductor lasers, and discloses a semiconductor laser stack array, which comprises a laser chip module, a heat dissipation module, a flexible heat conduction insulating layer and an elastic fastening module, and is characterized in that the flexible heat conduction insulating layer is arranged between the laser chip module and the heat dissipation module; the heat dissipation module is used for conducting heat dissipation and insulation on the laser chip module; and the elastic fastening module is configured to elastically press and fix the laser chip module and the heat dissipation module from top to bottom, so that the laser chip module is fixed and tightly contacted with the heat dissipation module through the flexible heat-conducting insulating layer. Due to the fact that no hard connection exists between the laser chip module and the heat dissipation module, the problem of stress mismatching between the laser chip module and the heat dissipation module caused by mismatching of thermal expansion coefficients of materials is greatly solved, the risk that the chip cracks and loses efficacy is reduced, and product reliability is improved.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of semiconductor laser technology, and more particularly to a semiconductor laser stack and a method for manufacturing the same. Background Art

[0002] Semiconductor laser arrays have been widely used in medical health, scientific research, industrial processing, laser pumping and other fields.

[0003] In the prior art, one packaging method for semiconductor laser arrays is to stack multiple laser chips in series, package and bond them together, to achieve a multi-chip vertical stacked semiconductor laser array. However, due to the large number of laser chips stacked, packaging is difficult, and when multiple laser chips are stacked and packaged in series, it is easy to cause large stresses in the stacked laser chip module and the heat dissipation module. This stress mainly comes from the mismatch in the thermal expansion coefficients of the laser chip module and the heat dissipation module, resulting in packaging stress after bonding. This packaging stress can easily cause cracks in the laser chip after packaging, and when working under long pulse width conditions, the laser chip can crack due to the sharp increase in stress on the laser chip, which can lead to failure of the semiconductor laser array. Summary of the Invention

[0004] In view of the above problems, the embodiments of the present application provide a semiconductor laser stack and a preparation method thereof to reduce the packaging stress caused by the mismatch of material thermal expansion coefficients between the laser chip module and the heat dissipation module in the semiconductor laser, and further solve the problem of laser chip cracking caused by packaging stress.

[0005] According to an embodiment of the present application, a semiconductor laser stack is provided, which includes a laser chip module, a heat dissipation module, a flexible thermally conductive insulating layer, and an elastic fastening module, wherein the flexible thermally conductive insulating layer is arranged between the laser chip module and the heat dissipation module to dissipate heat and insulate the laser chip module; the elastic fastening module is configured to elastically press and fix the laser chip module and the heat dissipation module from top to bottom, so that the laser chip module is fixed and in close contact with the heat dissipation module through the flexible thermally conductive insulating layer. There is no welding bonding between the laser chip module and the heat dissipation module, and the function of the flexible thermally conductive insulating layer is to dissipate heat and insulate the laser chip module. Since there is no hard connection between the laser chip module and the heat dissipation module, the stress mismatch problem caused by the mismatch of the thermal expansion coefficients of the materials between the laser chip module and the heat dissipation module is greatly eliminated, the risk of crack failure of the chip is reduced, and the product reliability is improved.

[0006] In one optional embodiment, the laser chip module includes a laser chip, a solder layer, and a chip substrate, wherein the laser chip and the chip substrate are bonded via the solder layer. The solder layer secures the laser chip to the chip substrate, ensuring thermal and electrical conductivity. This prevents the laser chip from falling off or failing under long-term operating conditions, thereby ensuring the long-term reliability of the laser chip module.

[0007] In one optional embodiment, the chip substrate is configured to be at least one of a high-thermal-conductivity metal material and a composite high-thermal-conductivity material. Because secondary bonding between the laser chip module and the heat dissipation module is not required, the material selection for the chip substrate and solder layer is flexible, without being restricted by the stress that may be caused by secondary bonding.

[0008] In an optional manner, the laser chip module includes a single-chip laser chip module formed by multiple chip substrates and a single laser chip, or a multi-chip laser chip module formed by a combination arrangement of multiple laser chips and multiple chip substrates, which is suitable for various forms of laser chip modules.

[0009] In one optional embodiment, the flexible thermally conductive insulating layer is constructed from a material that exhibits elasticity, insulation, and high thermal conductivity. Because the flexible thermally conductive insulating layer utilizes a material that exhibits elasticity, insulation, and high thermal conductivity, it simultaneously achieves stress relief, insulation, and high thermal conductivity. Furthermore, because the flexible thermally conductive insulating layer provides insulation, the laser chip module and heat dissipation module do not require an additional insulating layer at the bottom when packaged. This shortens the heat dissipation path, reduces thermal resistance, simplifies operation, and reduces the material cost of the product.

[0010] In an optional embodiment, the elastic fastening module includes an elastic pressure pad, a pressure equalizing plate, an elastic element, and a pressure fastening element, wherein the elastic pressure pad is disposed on opposite sides of the laser chip module near the edge thereof, and is used to press the laser chip module and bring it into close contact with the flexible thermally conductive insulating layer and the heat dissipation module; the pressure equalizing plate is disposed above the elastic pressure pad and matches the position of the elastic pressure pad, and is used to evenly apply the pressure generated by the pressure fastening element and the elastic element to the laser chip module; the elastic element and the pressure fastening element are disposed on the upper portion of the pressure equalizing plate, and are used to press the pressure equalizing plate and the elastic pressure pad against the laser chip module. The elastic element and the pressure fastening element press the pressure equalizing plate and the elastic pressure pad against the laser chip module through the elastic element and the pressure fastening element, and as the pressure of the pressure fastening element increases, the laser chip module forms close contact with the flexible thermally conductive insulating layer and the heat dissipation module. The elastic element has the characteristic of controllable pressure, which can prevent the laser chip module from cracking due to excessive pressure. In addition, the elastic element can generate continuous pressure, so that the laser chip module can be in close contact with the flexible thermal insulation layer and the heat dissipation module at high and low temperatures, continuously improving the heat dissipation performance of the product.

[0011] In one optional embodiment, the elastic pressure pad includes a first contact surface that contacts two opposite sides of the laser chip module near the edge, a second contact surface that contacts two opposite end surfaces of the laser chip module, and a third contact surface that contacts the heat dissipation module, thereby ensuring that the laser chip module can be pressed tightly and is in close contact with the flexible thermally conductive insulation layer and the heat dissipation module.

[0012] In an optional manner, the material of the pressure homogenizing plate is configured to be a metal or non-metal material with a yield strength greater than 100 MPa.

[0013] In an optional manner, a threaded hole is provided on the heat dissipation module, and both the elastic pressure pad and the pressure equalizing plate are provided with through holes matching the threaded hole of the heat dissipation module.

[0014] In an optional manner, the elastic pressure pad is configured as an insulating and elastic material.

[0015] The semiconductor laser array provided in the embodiments of the present application is constructed by providing a flexible thermally conductive insulating layer and an elastic fastening module within the semiconductor laser array. Specifically, the flexible thermally conductive insulating layer is provided between the laser chip module and the heat dissipation module. The elastic fastening module is used to ensure that the laser chip module is in close contact with the heat dissipation module via the flexible thermally conductive insulating layer. No welding or bonding is performed between the laser chip module and the heat dissipation module, and the flexible thermally conductive insulating layer provides heat dissipation and insulation for the laser chip module. The lack of a hard connection between the laser chip module and the heat dissipation module significantly eliminates the stress mismatch problem caused by mismatched material thermal expansion coefficients between the laser chip module and the heat dissipation module, reduces the risk of chip crack failure, and improves product reliability.

[0016] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Various other advantages and benefits will become apparent to those skilled in the art upon reading the detailed description of the preferred embodiment below. The accompanying drawings are for illustration purposes only and are not to be considered as limiting the present application. The same reference symbols are used throughout the drawings to represent the same components. In the drawings:

[0018] Figure 1 This is a schematic diagram of the main structure of the laser chip module provided in an embodiment of the present application;

[0019] Figure 2 A schematic diagram of the top view of the laser chip module provided in an embodiment of the present application;

[0020] Figure 3 A schematic diagram of a top view of the semiconductor laser array structure provided in an embodiment of the present application;

[0021] Figure 4 for Figure 3 Schematic diagram of the cross-sectional structure along the A-A' direction.

[0022] The accompanying drawings in the specific implementation manner are as follows:

[0023] 100. Laser chip module; 101. Laser chip; 102. Solder layer; 103. Chip substrate;

[0024] 20. Semiconductor laser stack; 200. Heat dissipation module; 300. Flexible thermal insulation layer; 400. Elastic fastening module;

[0025] 401, elastic pressure pad; 402, pressure equalizing plate; 403, elastic element; 404, pressure fastening element;

[0026] 4011, first contact surface; 4012, second contact surface; 4013, third contact surface. DETAILED DESCRIPTION

[0027] The following embodiments of the technical solution of the present application will be described in detail with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present application and are therefore only examples and are not intended to limit the scope of protection of the present application.

[0028] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above-mentioned figure descriptions are intended to cover non-exclusive inclusions.

[0029] In the description of the embodiments of this application, the technical terms "first" and "second" are used only to distinguish different objects and should not be understood to indicate or imply relative importance or implicitly specify the quantity, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, the meaning of "plurality" is more than two, unless otherwise clearly and specifically defined.

[0030] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0031] In the description of the embodiments of this application, the term "and / or" is simply a description of the association relationship between associated objects, indicating that three relationships can exist. For example, A and / or B can represent the following three situations: A exists, A and B exist at the same time, and B exists. In addition, the character " / " in this document generally indicates that the associated objects are in an "or" relationship.

[0032] In the description of the embodiments of the present application, the term "multiple" refers to more than two (including two). Similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).

[0033] In the description of the embodiments of the present application, the technical terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the embodiments of the present application.

[0034] In the description of the embodiments of the present application, unless otherwise expressly specified or limited, technical terms such as "installed," "connected," "connected," and "fixed" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integration; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; internal connections between two components or interactions between two components. Those skilled in the art can understand the specific meanings of the above terms in the embodiments of the present application based on specific circumstances.

[0035] There are two existing packaging methods for semiconductor laser arrays: one is to stack multiple laser chips in series and package and bond them together to achieve a multi-chip vertical stacked semiconductor laser. The advantages of this structure are small size, high power density, and flexible cooling methods. However, the disadvantages are also obvious. The large number of stacked laser chips makes packaging difficult. The bottom of the laser chip module generally uses aluminum nitride-coated metal layer ceramics. The laser chip module and the heat dissipation module are bonded using low-temperature gradient solder. The stress mainly comes from the mismatch of the thermal expansion coefficients of the laser chip module and the heat dissipation module. After bonding, packaging stress is generated, which can easily cause cracks in the laser chip after packaging. In addition, when working under long pulse width conditions, the stress on the laser chip increases sharply, causing the chip to crack, resulting in failure of the semiconductor laser array. Another packaging method is to first package it into a single-chip semiconductor laser module, and then use mechanical methods to connect the single-chip semiconductor laser modules to achieve a vertical array of multiple chips. The advantages of this structure are simple single-chip packaging, low single-chip packaging stress, and no risk of chip cracks. The disadvantages are large size, high cost, and it is generally only suitable for microchannel water-cooled or macrochannel water-cooled packaging structures.

[0036] Based on this, the embodiments of the present application are primarily improvements to the first packaging method. On the one hand, the embodiments of the present application provide a semiconductor laser stack to reduce the packaging stress caused by the mismatch in thermal expansion coefficients between the laser chip module and the heat dissipation module, further resolving the problem of laser chip cracking caused by packaging stress.

[0037] See also Figure 1 and Figure 2 , Figure 1 Schematic diagram of the main structure of the laser chip module provided in an embodiment of the present application is shown; Figure 2 A schematic diagram of the top view structure of the laser chip module provided in an embodiment of the present application is shown.

[0038] The laser chip module 100 includes a laser chip 101, a solder layer 102 and a chip substrate 103. Figure 1 and Figure 2 In the illustrated embodiment, a laser chip 101 and a chip substrate 103 are stacked in sequence and bonded to the chip substrate 103 via a solder layer 102 to form a laser chip module 100. The laser chip module 100 can be a single-chip laser chip module comprising multiple chip substrates and a single laser chip, or a multi-chip laser chip module comprising a combination of multiple laser chips and multiple chip substrates, and is applicable to various laser chip module formats.

[0039] The laser chip 103 is fixedly connected to the chip substrate 103 through the solder layer 102 to achieve thermal and electrical conductivity, so that the laser chip will not fall off or fail under long-term working conditions, thereby ensuring the long-term reliability of the laser chip module.

[0040] Since the embodiment of the present application does not require secondary bonding of the laser chip module 100 and the heat dissipation module 200, the material selection of the chip substrate 103 is flexible, including but not limited to high thermal conductivity metal materials, which can be one or more of Cu, MoCu, CuW, CuD, AgD and other composite high thermal conductivity materials. Other composite high thermal conductivity materials can be CuMoCu, CuWCu, DPC. The material of the solder layer 102 includes but is not limited to various high and low temperature solders and silver pastes, for example, it can be high temperature soft solders such as Au88Ge12, Au96.8Si3.2, Au80Sn20, etc., it can also be low temperature soft solders such as Sn96.5Ag3Cu0.5, SnCu, In, InAg, etc., it can also be materials such as solidified silver paste and nano-sintered silver paste, which are flexible to choose and do not need to be limited by the stress influence that may be caused by secondary bonding.

[0041] See also Figure 3 and Figure 4 , Figure 3 A schematic diagram of a top view of the semiconductor laser array structure provided in an embodiment of the present application; Figure 4 for Figure 3 Schematic diagram of the cross-sectional structure along the A-A' direction.

[0042] In an embodiment of the present application, the semiconductor laser stack 20 includes a laser chip module 100, a heat dissipation module 200, a flexible thermally conductive insulating layer 300, and an elastic fastening module 400. The flexible thermally conductive insulating layer 300 is disposed between the laser chip module 100 and the heat dissipation module 200. The elastic fastening module 400 is configured to elastically compress and secure the laser chip module 100 and the heat dissipation module 200 from top to bottom, so that the laser chip module 100 is fixed and in close contact with the heat dissipation module 200 through the flexible thermally conductive insulating layer 300. No welding or bonding is performed between the laser chip module 100 and the heat dissipation module 200. The flexible thermally conductive insulating layer 300 serves to dissipate heat and insulate the laser chip module 100. Since there is no hard connection between the laser chip module 100 and the heat dissipation module 200, the stress mismatch problem caused by the mismatch in the thermal expansion coefficients of the materials between the laser chip module 100 and the heat dissipation module 200 is greatly eliminated, thereby reducing the risk of chip crack failure and improving product reliability.

[0043] The laser chip module 100 can be configured as follows according to actual needs: Figure 1 and Figure 2 The laser chip module shown in FIG. 1 is not limited to the number and arrangement of the laser chips 101 and the chip substrate 103 .

[0044] The materials of the heat dissipation module 200 include but are not limited to various metal or non-metal high thermal conductivity materials. The heat dissipation module 200 can be a conduction cooling heat sink, a microchannel liquid cooling heat sink, or a macrochannel liquid cooling heat sink.

[0045] The material of the flexible thermally conductive insulating layer 300 includes, but is not limited to, materials with elasticity, insulation, and high thermal conductivity. For example, the flexible thermally conductive insulating layer 300 can be silicone filled with high thermal conductivity insulating powder materials, such as ceramic powder-filled silicone material or diamond powder-filled silicone sheet material. It can also be a polymer material filled with high thermal conductivity insulating powder materials. It can also be an insulating thermally conductive silicone grease material; an insulating phase change thermally conductive material; or an insulating thermally conductive gel filled with high thermal conductivity insulating powder materials. Because the flexible thermally conductive insulating layer 300 utilizes materials with elasticity, insulation, and high thermal conductivity, it simultaneously achieves stress relief, insulation, and high thermal conductivity. Furthermore, because the flexible thermally conductive insulating layer 300 provides insulation, compared to existing technologies, the laser chip module 100 and heat dissipation module 200 do not require an additional insulating layer at the bottom during packaging. This shortens the heat dissipation path, reduces thermal resistance, simplifies operation, and reduces product material costs.

[0046] The elastic fastening module 400 includes but is not limited to an elastic pressure pad 401 , a pressure equalizing plate 402 , an elastic element 403 and a pressure fastening element 404 .

[0047] The elastic pressure pads 401 are preferably provided in two pieces as needed, and are respectively provided on opposite sides of the laser chip module 100 near the edge. The material of the elastic pressure pads 401 includes, but is not limited to, insulating and elastic materials, such as fluororubber, silicone rubber, and silicone rubber. The elastic pressure pads 401 are provided in an L-shape, comprising a first contact surface 4011 in contact with opposite sides of the laser chip module 100 near the edge, a second contact surface 4012 in contact with opposite side end surfaces of the laser chip module 100, and a third contact surface 4013 in contact with the heat dissipation module 200. Please refer to Figure 4 As shown, the shape of the elastic pressure pad 401 and the area settings of the first contact surface 4011, the second contact surface 4012 and the third contact surface 4013 should ensure that the laser chip module 100 can be pressed and is in close contact with the flexible thermally conductive insulation layer 300 and the heat dissipation module 200.

[0048] The pressure equalizing plates 402 are matched with the elastic pressure pads 401 and are preferably provided in pairs, one on top of the elastic pressure pads 401, to evenly apply the pressure generated by the pressure fastening element 404 and the elastic element 403 to the laser chip module 100. The materials of the pressure equalizing plates 402 include, but are not limited to, metals and non-metallic materials with a yield strength greater than 100 MPa.

[0049] To facilitate installation, the elastic pressure pad 401 and the pressure equalizing plate 402 are both provided with through holes that match the threaded holes of the heat dissipation module 200 .

[0050] The elastic element 403 and the pressure fastening element 404 are respectively arranged on the upper part of the pressure equalization plate 402. The pressure equalization plate 403 and the elastic pressure pad 402 are pressed tightly against the laser chip module 100 by the elastic element 403 (e.g., a pressure spring) and the pressure fastening element 404 (e.g., a fastening screw). As the pressure of the pressure fastening element 404 increases, the laser chip module 100 forms close contact with the flexible thermally conductive insulation layer 300 and the heat dissipation module 200. The elastic element 403 has the characteristic of controllable pressure, which can prevent the laser chip module 100 from cracking due to excessive pressure. In addition, the elastic element 403 can generate continuous pressure, so that the laser chip module 100 can maintain close contact with the flexible thermally conductive insulation layer 300 and the heat dissipation module 200 at both high and low temperatures, continuously improving the product's heat dissipation performance.

[0051] The present invention also provides a method for preparing a semiconductor laser array, comprising the following steps:

[0052] S1, manufacturing a laser chip module 100;

[0053] Specifically, a reflow oven or an automatic chip placement machine can be used to bond the laser chip 101 and the chip substrate 103 through the solder 102 to form the laser chip module 100;

[0054] S2, stacking and assembling the heat dissipation module 200, the flexible thermally conductive insulation layer 300 and the laser chip module 100 in sequence from bottom to top;

[0055] Specifically, the sizes of the heat dissipation module 200 and the flexible thermally conductive insulation layer 300 match the size of the bottom of the laser chip module 100 .

[0056] S3, installing elastic pressure pads 401 at positions near the edges of two opposite sides of the laser chip module 100;

[0057] Specifically, see Figure 3 As shown, the elastic pressure pad 401 is configured as an L-shape, including a first contact surface 4011 that contacts the positions near the edges of the laser chip module 100 on opposite sides, a second contact surface 4012 that contacts the end surfaces of the laser chip module 100 on opposite sides, and a third contact surface 4013 that contacts the heat dissipation module 200. Figure 4 As shown, the shape of the elastic pressure pad 401 and the area settings of the first contact surface 4011, the second contact surface 4012 and the third contact surface 4013 should ensure that the laser chip module 100 can be pressed and is in close contact with the flexible thermally conductive insulation layer 300 and the heat dissipation module 200.

[0058] S4, install the pressure equalizing plate 402 on the corresponding upper part of the elastic pressure pad 401, align the through holes of the elastic pressure pad 401 and the pressure equalizing plate 402 with the threaded holes of the heat dissipation module 200 and prepare for assembly;

[0059] S5 , installing the elastic element 404 and the pressure fastening element 404 , so that the pressure uniforming plate 402 and the elastic pressure pad 401 uniformly press the laser chip module 100 .

[0060] Specifically, the pressure equalizing plate 402 is used to equalize the pressure applied by the pressure fastening element 404 to the laser chip module 100 .

[0061] The embodiment of the present invention provides a flexible thermally conductive insulating layer 300 and an elastic fastening module 400 in a semiconductor laser stack. Specifically, the flexible thermally conductive insulating layer 300 is disposed between the laser chip module 100 and the heat dissipation module 200. The elastic fastening module 400 is used to ensure close contact between the laser chip module 100 and the heat dissipation module 200 via the flexible thermally conductive insulating layer 300. No welding or bonding is performed between the laser chip module 100 and the heat dissipation module 200. The flexible thermally conductive insulating layer 300 provides heat dissipation and insulation for the laser chip module 100. There is no hard connection between the laser chip module 100 and the heat dissipation module 200, which greatly eliminates the stress mismatch problem caused by the mismatch in the thermal expansion coefficients of the materials between the laser chip module 100 and the heat dissipation module 200, reduces the risk of chip crack failure, and improves product reliability.

[0062] Furthermore, since the flexible thermally conductive insulating layer 300 has an insulating function, when the laser chip module 100 and the heat dissipation module 200 are packaged, compared with the existing technology, no additional insulating layer needs to be set at the bottom, which shortens the heat dissipation path, reduces thermal resistance, simplifies operation, and reduces the material cost of the product.

[0063] Furthermore, the shape of the elastic pressure pad 401 and the area settings of the first contact surface 4011, the second contact surface 4012 and the third contact surface 4013 ensure that the laser chip module 100 can be pressed and is in close contact with the flexible thermally conductive insulation layer 300 and the heat dissipation module 200.

[0064] Furthermore, as the pressure of the pressure-fastening element 404 increases, the laser chip module 100 forms close contact with the flexible thermally conductive insulation layer 300 and the heat dissipation module 200. The elastic element 403 has controllable pressure, preventing cracks in the laser chip module 100 caused by excessive pressure. Furthermore, the elastic element 403 can generate continuous pressure, ensuring close contact between the laser chip module 100, the flexible thermally conductive insulation layer 300, and the heat dissipation module 200 at both high and low temperatures, thereby continuously improving the product's heat dissipation performance.

[0065] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some or all of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application, and they should all be included in the scope of the claims and specification of the present application. In particular, as long as there is no structural conflict, the various technical features mentioned in the various embodiments can be combined in any way. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions that fall within the scope of the claims.

Claims

1. A semiconductor laser stack, characterized in that: The semiconductor laser stack includes a laser chip module, a heat dissipation module, a flexible heat-conducting insulation layer and an elastic fastening module, wherein: The flexible heat-conductive insulating layer is provided between the laser chip module and the heat dissipation module, and is used for dissipating heat and insulating the laser chip module; The elastic fastening module is configured to elastically compress and fix the laser chip module and the heat dissipation module from top to bottom, so that the laser chip module is fixed and in close contact with the heat dissipation module through the flexible thermally conductive insulating layer.

2. The semiconductor laser array according to claim 1, wherein: The laser chip module comprises a laser chip, a solder layer and a chip substrate, and the laser chip and the chip substrate are bonded together via the solder layer.

3. The semiconductor laser array according to claim 2, wherein: The chip substrate is configured as at least one of a high thermal conductivity metal material and a composite high thermal conductivity material.

4. The semiconductor laser array according to claim 1, wherein: The laser chip module includes a single-chip laser chip module formed by a plurality of chip substrates and a single laser chip, or a multi-chip laser chip module formed by a combination of a plurality of laser chips and a plurality of chip substrates.

5. The semiconductor laser array according to claim 1, wherein: The material of the flexible thermally conductive insulating layer is configured to have elasticity, insulation and high thermal conductivity.

6. The semiconductor laser stack according to any one of claims 1 to 5, characterized in that: The elastic fastening module is used to include an elastic pressure pad, a pressure equalizing plate, an elastic element and a pressure fastening element, wherein: The elastic pressure pads are arranged on opposite sides of the laser chip module near the edges, and are used to press the laser chip module tightly and keep it in close contact with the flexible thermal insulation layer and the heat dissipation module; The pressure equalizing plate is arranged above the elastic pressure pad and matches the position of the elastic pressure pad, and is used to evenly apply the pressure generated by the pressure fastening element and the elastic element to the laser chip module; The elastic element and the pressure fastening element are respectively arranged on the upper part of the pressure equalizing plate in sequence, and are used to press the pressure equalizing plate and the elastic pressure pad to the laser chip module.

7. The semiconductor laser array according to claim 6, wherein: The elastic pressure pad includes a first contact surface contacting positions near the edge on two opposite sides of the laser chip module, a second contact surface contacting end surfaces on two opposite sides of the laser chip module, and a third contact surface contacting the heat dissipation module.

8. The semiconductor laser array according to claim 6, wherein: The material of the pressure equalizing plate is configured to be a metal or non-metal material with a yield strength greater than 100 MPa.

9. The semiconductor laser stack according to claim 6, wherein: The heat dissipation module is provided with threaded holes, and the elastic pressure pad and the pressure equalization plate are both provided with through holes matching the threaded holes of the heat dissipation module.

10. The semiconductor laser array according to claim 6, wherein: The elastic pressure pad is configured with an insulating and elastic material.

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