Microwave unit and substrate processing apparatus including same
By forming a metal coating on the upper surface of the window component of the microwave unit and utilizing the surface plasma resonance phenomenon, the problem of uneven microwave heating of the substrate is solved, the uniformity of the substrate temperature and the improvement of heating efficiency are achieved, and the quality and yield of semiconductor chips are improved.
Patent Information
- Application Number
- CN202411799001.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-03-05
- Filing Date
- 2024-12-09
- Publication Date
- 2025-09-05
AI Technical Summary
In the prior art, there is a problem of uneven heating when microwaves are used to heat substrates, resulting in temperature differences in different areas of the substrate, which affects the quality and yield of semiconductor chips.
A metal coating is formed on the upper surface of the window component of the microwave unit, and the electric field is evenly distributed through the surface plasma resonance phenomenon, thereby improving the temperature uniformity and heating efficiency of the entire substrate.
Through the surface plasma resonance phenomenon, the temperature uniformity and heating efficiency of the entire substrate are improved, the problem of uneven heating is solved, and the production quality and output of semiconductor chips are improved.
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Figure CN120603092A_ABST