Ultra-low power consumption radio frequency photon transceiver chip and transceiver method for 6G communication base station

Abstract

The invention relates to an ultra-low power consumption radio frequency photon transceiver chip for a 6G communication base station, which belongs to the field of microwave technology and photoelectron technology, and comprises a Si substrate, a buried SiO2 layer and a Si device layer, the Si device layer is provided with a photoelectric detection unit, an electro-optic phase modulation unit, a high-frequency resistor, a radio frequency input / output interface, an optical input / output interface and an electric input interface; the photoelectric detection unit is used for converting an input optical signal into a radio frequency signal and feeding the radio frequency signal to the antenna unit for emission; the electro-optic phase modulation unit is used for modulating an input optical phase according to a radio frequency signal received by the antenna unit; the high-frequency resistor serves as a matching resistor of the photoelectric detection unit and serves as a load resistor of the electro-optic phase modulation unit; and the radio frequency input / output interface, the optical input / output interface and the electric input interface are used for providing corresponding interface channels for connection of the photoelectric detection unit, the electro-optical phase modulation unit and the high-frequency resistor with radio frequency signals, optical signals or electric signals.

Description

Technical Field

[0001] The present invention belongs to the field of microwave technology and optoelectronics technology, and relates to an ultra-low power consumption radio frequency photonic transceiver chip and a transceiver method for a 6G communication base station. Background Art

[0002] The future 6G mobile communication network faces huge technical challenges such as larger bandwidth, higher-speed mobility, lower latency, higher reliability, ultra-dense deployment, and heterogeneous network integration. In order to meet the above challenges, (1) higher-frequency carriers (millimetre waves from tens of GHz to hundreds of GHz) need to be adopted, because higher-frequency carriers mean higher data transmission rates can be carried on them; (2) base station antennas need to adopt larger-scale MIMO (multiple-input, multiple-output) technology, and the number of antenna units will evolve from 16 / 64 units to 256 / 1024 units. This is because MIMO technology uses high-performance channel estimation, beamforming, precoding, and channel feedback to improve the spectrum efficiency, system throughput, and energy efficiency of wireless communications, which is strictly related to the number of MIMO antenna units.

[0003] In existing 5G communications, since the number of MIMO antenna units is not too large (such as 16 / 64 units), the antenna end on the tower can still accommodate multiple functional units including frequency source, up / down converter, filter, microwave amplifier, AD / DA converter, digital optical transceiver module, etc. However, with the increase in the number of antenna units in 6G base stations, the number of devices that need to be integrated at the antenna end will increase significantly, and the power consumption generated will also increase significantly.

[0004] Currently, the solution for uplink and downlink transmission of RF signals between the antenna end on the tower and the equipment room under the tower is to use RF optical transmission links, such as Figure 1 As shown in the figure, the antenna end contains a variety of independently packaged devices including circulators, microwave amplifiers, electro-optical modulators, photodetectors, etc.; when the number of antenna units required for 6G base stations increases significantly to hundreds or even thousands of units, the volume and power consumption of hundreds or thousands of RF optical transmission links will reach a level that the antenna end cannot bear.

[0005] In summary, the existing antenna end architecture cannot adapt to the needs of 6G communication base stations. Therefore, it is necessary to simplify the antenna end architecture as much as possible and reduce the power consumption of the antenna end.

[0006] To simplify the 6G communication antenna architecture, the most direct approach is to transmit the RF signals transmitted and received by the antenna directly to the base of the tower, thereby placing functional units such as the frequency source, up / down converter, filter, microwave amplifier, AD / DA converter, and data processing in the equipment room below the tower. This is because the equipment room inside the tower has better power supply capacity and a more suitable ambient temperature, which helps extend the service life of high-cost equipment. In addition, performing signal conversion, digitization, and signal processing in the equipment room is more decentralized and can better utilize cloud computing resources to achieve the AI-based adaptive channel resource allocation required for 6G communication.

[0007] Therefore, it is necessary to build a new antenna end architecture to achieve low-loss, low-power RF connection between the antenna end on the tower and the equipment room under the tower, so as to better meet the application requirements of 6G communication base stations. Summary of the Invention

[0008] In view of this, the object of the present invention is to provide an ultra-low power consumption radio frequency photonic transceiver chip for 6G communication base stations.

[0009] In order to achieve the above object, the present invention provides the following technical solutions:

[0010] An ultra-low power radio frequency photon transceiver chip for a 6G communication base station, comprising a Si substrate, a buried SiO2 layer, and a Si device layer; the buried SiO2 layer is disposed between the Si substrate and the Si device layer; the Si device layer is provided with a photoelectric detection unit, an electro-optical phase modulation unit, a high-frequency resistor, a radio frequency input and output interface, an optical input and output interface, and an electrical input interface;

[0011] The photoelectric detection unit is used to convert the input optical signal into a radio frequency signal and feed it to the antenna unit for transmission;

[0012] The electro-optical phase modulation unit is used to modulate the input optical phase according to the radio frequency signal received by the antenna unit;

[0013] The high-frequency resistor serves as a matching resistor for the photoelectric detection unit and as a load resistor for the electro-optical phase modulation unit;

[0014] The radio frequency input and output interface, optical input and output interface and electrical input interface are used to provide corresponding interface channels for connecting the photoelectric detection unit, electro-optical phase modulation unit and high-frequency resistor with radio frequency signals, optical signals or electrical signals.

[0015] Furthermore, the optical input and output interface includes a first optical input and output interface, a second optical input and output interface, and an optical output interface.

[0016] Furthermore, the photoelectric detection unit adopts a germanium-on-silicon epitaxial growth process to form multiple germanium regions on the silicon waveguide, and an electrode-S is provided on the germanium region; it also includes a U-shaped electrode-G, and the electrode-G is provided on the silicon waveguide to surround the electrode-S; the silicon waveguide is connected to the first optical input interface.

[0017] Furthermore, the electro-optical phase modulation unit includes a non-photosensitive benzocyclobutene (BCB) bonding layer and a silicon waveguide arranged at both ends of the BCB bonding layer, and a lithium niobate waveguide is provided at the upper end of the BCB bonding layer; optical coupling is achieved between the silicon waveguide and the lithium niobate waveguide through evanescent waves; a traveling wave electrode-S and a traveling wave electrode-G are provided on the lithium niobate waveguide; the silicon waveguide at one end is connected to the second optical input interface, and the silicon waveguide at the other end is connected to the optical output interface.

[0018] Furthermore, it includes a Vcc pad, which is an interface for connecting the chip to an external reverse bias voltage and is connected to the electrode -G of the photodetection unit to provide a reverse bias voltage for the photodetection unit.

[0019] Furthermore, it includes a GND pad, which is an interface connecting the chip to the external ground and is connected to the high-frequency resistor and the traveling wave electrode-G of the electro-optical phase modulation unit.

[0020] Furthermore, it includes a G pad and an S pad, which are the RF connection ports between the chip and the outside; the G pad is connected to the packaging tube shell on the outside and is connected to the traveling wave electrode-G on the inside; the S pad is connected to the signal pin of the RF connector on the outside and is connected to the traveling wave electrode-S on the inside.

[0021] Furthermore, one end of the high-frequency resistor is connected to the GND pad, and the other end is connected to the electrode-S of the photoelectric detection unit and the traveling wave electrode-S of the electro-optical phase modulation unit through gold wire bonding.

[0022] On the other hand, the present invention provides an ultra-low power consumption radio frequency photon transceiver method for a 6G communication base station, based on the chip, comprising:

[0023] Transmission: The RF signal to be transmitted in the remote equipment room is modulated onto an optical carrier and transmitted via optical fiber to the first optical input interface of the ultra-low power RF photonic transceiver chip. The photoelectric detection unit converts the optical signal into a RF signal. The RF signal is then fed to the antenna unit using the traveling wave electrode of the electro-optical phase modulation unit as a transmission line.

[0024] Receiving: Another unmodulated laser beam in the remote equipment room is transmitted through another optical fiber to the second optical input interface of the ultra-low-power RF photonic transceiver chip, and then enters the electro-optical phase modulation unit. Its optical phase is modulated by the RF signal from the antenna unit and output through the optical output interface. It is then transmitted to the remote equipment room by a third optical fiber for demodulation to obtain the RF signal of the antenna unit.

[0025] The beneficial effects of the present invention are:

[0026] (1) The radio frequency photonic transceiver chip proposed in the present invention has the advantage of ultra-low power consumption

[0027] When this chip receives the RF signal from the antenna, it directly modulates the RF signal onto the optical carrier through the traveling wave electrode, and the optical carrier is then sent to the back-end machine room through the passive optical fiber. Figure 5 It can be seen that when the half-wave voltage V π When the voltage is less than 1V and the received photocurrent is greater than 20mA, the RF gain of the link will be greater than zero, so the amplifier A (such as Figure 1 ); In this way, the entire process of receiving radio frequency signals on the tower does not consume any power.

[0028] In the process of feeding the RF signal to be transmitted to the antenna by this chip, the optical signal from the remote machine room is modulated with the RF signal to be transmitted. The photoelectric detection unit of the chip demodulates the optical signal into the RF signal to be transmitted under the external 3.3V reverse bias voltage, and then feeds it to the antenna through the traveling wave electrode. Because the power of the optical signal transmitted by the optical amplifier in the remote machine room is amplified, the photocurrent output by the photoelectric detection unit can be increased, thereby improving the RF gain of the link (such as Figure 5 As shown), the RF signal to be transmitted reaches the power required for transmission, so that the amplifier B (as shown) required for the transmission link under the traditional architecture is no longer needed. Figure 1 ); Therefore, the power consumption of the signal transmission process comes only from the dark current generated by the photodetection unit (usually nA level), and the power consumption is only 10 -8 W level.

[0029] In summary, the power consumption of the entire RF photon transceiver chip is only 10 -8 W level, so the chip has the characteristics of ultra-low power consumption.

[0030] (2) The radio frequency signals received and transmitted by the antenna unit are naturally isolated in the optical wave by this chip, thus giving the chip the advantage of high transmit-receive isolation.

[0031] In the electro-optical phase modulation unit, only when the direction of light wave transmission is the same as the direction of RF signal transmission in the traveling wave electrode, can the microwave field and the light field fully interact and the RF signal be efficiently modulated onto the light wave; on the contrary, if the direction of light wave transmission is opposite to the direction of RF signal transmission in the traveling wave electrode, the microwave field can hardly modulate the light field; therefore, when the light wave is transmitted to the optoelectronic demodulation unit in the remote machine room and the light wave is converted into microwaves, only the received RF signal from the antenna will be demodulated, and there will be almost no RF signal to be transmitted. The results of theoretical calculations are as follows: Figure 5As shown, compared with the traditional microwave circulator used in existing communication base stations, the isolation of the radio frequency photonic transceiver chip proposed in the present invention is improved by about 20dB.

[0032] (3) The RF photonic transceiver chip proposed in this invention converts the RF signals to optical waves. On the one hand, by utilizing the ultra-low loss of optical fiber (approximately 0.2 dB / km), the signal can be transmitted over hundreds of meters or even kilometers, fully covering the distance between the antenna end and the remote equipment room in various practical application scenarios. On the other hand, because the transceiver signals have been modulated onto optical waves, it is convenient to use photonic true delay technology in the remote equipment room to achieve phase control of the RF signals transmitted and received by each antenna unit, thereby meeting the beamforming requirements of MIMO antennas.

[0033] (4) Significantly reduce the complexity of the antenna end architecture and reduce the volume and weight.

[0034] Depend on Figure 1 and Figure 2 From the comparison, it can be seen that compared with the traditional architecture, the RF photonic transceiver chip proposed in the present invention greatly simplifies the complexity of the antenna end on the communication base station tower. The antenna end only requires N chips directly connected to N antenna units; and the N chips can be integrated in an array, such as 4 or 8 transceiver channels integrated on a single chip and packaged together, so that the number of chips can be reduced to N / 4 or N / 8; thereby greatly reducing the volume and weight of the antenna end.

[0035] Other advantages, objects, and features of the present invention will be described in part in the following description and, in part, will be apparent to those skilled in the art upon examination of the following description or may be learned from practice of the present invention. The objects and other advantages of the present invention may be realized and obtained through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to make the purpose, technical solutions and advantages of the present invention more clear, the present invention will be described in detail below with reference to the accompanying drawings, in which:

[0037] Figure 1 Schematic diagram of the traditional radio frequency photonic transmission link used in 6G communication base stations;

[0038] Figure 2 Schematic diagram of a radio frequency photon transmission link based on the radio frequency photon transceiver chip proposed in the present invention;

[0039] Figure 3 Schematic diagram of the ultra-low power radio frequency photonic transceiver chip proposed by the present invention

[0040] Figure 4The configuration of a remote machine room (under the tower) that matches the radio frequency photon transceiver chip proposed in the present invention;

[0041] Figure 5 The variation of link RF gain with detection unit photocurrent under different electro-optical modulation half-wave voltages;

[0042] Figure 6 Comparison of the transmit-receive isolation index between a traditional microwave circulator and the radio frequency photonic transceiver chip proposed in the present invention;

[0043] Figure 7 This is an example of an embodiment of a radio frequency photonic transceiver chip. DETAILED DESCRIPTION

[0044] The following describes the embodiments of the present invention by means of specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present invention, and the following embodiments and features in the embodiments can be combined with each other without conflict.

[0045] Among them, the accompanying drawings are only for illustrative purposes and represent only schematic diagrams rather than actual pictures, and should not be understood as limiting the present invention. In order to better illustrate the embodiments of the present invention, some parts of the accompanying drawings may be omitted, enlarged or reduced, and do not represent the dimensions of actual products. For those skilled in the art, it is understandable that some well-known structures and their descriptions may be omitted in the accompanying drawings.

[0046] The same or similar numbers in the drawings of the embodiments of the present invention correspond to the same or similar parts; in the description of the present invention, it should be understood that if there are terms such as "upper", "lower", "left", "right", "front", "back", etc. indicating directions or positional relationships, they are based on the directions or positional relationships shown in the drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operate in a specific direction. Therefore, the terms describing the positional relationship in the drawings are only used for illustrative purposes and cannot be understood as limiting the present invention. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to specific circumstances.

[0047] Example 1:

[0048] The present invention provides an ultra-low power consumption radio frequency photon transceiver chip, which can be used for the antenna end of a 6G communication base station, and can efficiently convert radio frequency signals / millimeter wave signals from the antenna into optical signals. At the same time, it can convert optical signals from the equipment room under the tower into radio frequency signals / millimeter wave signals, which are directly transmitted through the antenna. Figure 2 As shown, the present invention replaces the original circulator, microwave amplifier, electro-optic modulator, photodetector and other multiple devices with a single integrated chip, and can work with almost no power consumption, which can fully meet the stringent requirements on volume and power consumption when the antenna array scale reaches hundreds or even thousands of units.

[0049] The ultra-low power consumption radio frequency photon transceiver chip of the present invention is based on silicon-based photon integration technology, and integrates a photoelectric detection unit, an electro-optical phase modulation unit, a 50 ohm high-frequency resistor, a radio frequency input and output interface, an optical input and output interface, an electrical input interface, etc. Figure 3 shown.

[0050] The specific functions of each part are as follows:

[0051] (1) Photoelectric detection unit, used to convert the RF modulated optical signal into a RF signal. Since the entire chip is a silicon-based photonic integrated chip, the photoelectric detection unit adopts the process of epitaxial germanium on silicon and forms multiple germanium regions to improve the saturation photocurrent level of the photoelectric detection, so that the power of the RF signal output by it reaches a level that can be fed to the antenna for direct transmission.

[0052] (2) The electro-optic phase modulation unit is used to modulate the phase of the input light by the radio frequency signal received by the antenna. In the electro-optic phase modulation unit, the lower silicon waveguide realizes the input and output of light at both ends. The lower silicon waveguide and the upper lithium niobate waveguide realize optical coupling through evanescent waves. When the light wave is transmitted in the lithium niobate waveguide, the larger electro-optic coefficient of the lithium niobate material is used to modulate the phase of the light wave.

[0053] (3) 50 ohm high-frequency resistor, which can be a nickel-chromium thin film resistor deposited on the chip or a high-frequency resistor of the patch; this high-frequency resistor plays the following two roles: ① As a matching resistor for the photoelectric detection unit. Since the characteristic impedance of the photoelectric detection unit is several thousand ohms, a 50 ohm resistor needs to be connected in parallel to the ground to ensure that the output impedance of the photoelectric detection unit reaches about 50 ohms. ② As a load resistor for the electro-optical phase modulation unit, to ensure that the equivalent input impedance of the electro-optical phase modulation unit as seen from the antenna end reaches 50 ohms.

[0054] (4) The Vcc pad is the interface between the chip and the external reverse bias voltage (+3.3V). Inside the chip, the Vcc pad is connected to the electrode -G of the photodetection unit, providing reverse bias voltage for the photodetection unit.

[0055] (5) The GND pad is the interface between the chip and the external ground. Inside the chip, the GND pad is connected to a 50-ohm high-frequency resistor and the traveling wave electrode -G of the electro-optical phase modulation unit.

[0056] (6) The G and S pads are the RF connection ports between the chip and the outside. When the chip is packaged, the G pad is connected to the package shell and internally connected to the traveling wave electrode-G; the S pad is connected to the signal pin of the RF connector installed on the shell and internally connected to the traveling wave electrode-S.

[0057] Example 2:

[0058] The ultra-low-power RF photonic transceiver chip is directly connected to the common antenna on the base station tower via an RF connector, enabling bidirectional transmission of broadband RF signals. The specific working principle is as follows:

[0059] like Figure 4 As shown, in the remote machine room under the tower, the RF signal to be transmitted is modulated onto an optical carrier and transmitted through an optical fiber to the optical input interface 1 of the ultra-low power RF photonic transceiver chip at the antenna end (on the tower). The electro-optical detection unit in the chip converts the optical signal into an RF signal, and then the traveling wave electrode of the electro-optical phase modulation unit is used as a transmission line to feed the RF signal to the antenna unit.

[0060] Another unmodulated laser beam from the remote machine room is transmitted via another optical fiber to the optical input interface 2 of the ultra-low-power RF photonic transceiver chip at the antenna end (on the tower). Inside the chip, this light wave enters the electro-optical phase modulation unit, where its optical phase is modulated by the RF signal from the antenna unit. The phase-modulated light wave is then output from the chip's optical output interface and transmitted via a third optical fiber to the remote machine room under the tower. In the remote machine room, the phase-modulated light wave is input into the optoelectronic demodulation unit, which contains an optical filter acting as a phase detector and a photodetector, thereby demodulating the RF signal from the antenna unit.

[0061] Moreover, in principle, the ultra-low-power RF photonic transceiver chip has high-isolation and simultaneous transceiver functions; because within the chip, the transmission direction of the RF signal from the antenna unit on the traveling wave electrode is the same as the transmission direction of the light wave, the RF signal from the antenna unit can be efficiently modulated onto the optical carrier; and the transmission direction of the RF signal to be transmitted output by the photoelectric detection unit on the traveling wave electrode is opposite to the transmission direction of the light wave, and the RF signal to be transmitted will not be modulated onto the optical carrier; therefore, the received RF signal from the antenna unit naturally has a high degree of isolation from the RF signal to be transmitted.

[0062] Example 3:

[0063] Reference Figure 6The external interface of the single-channel RF photonic transceiver chip includes two input optical interfaces and one output optical interface. Each optical interface is a mode spot converter close to the edge of the chip, which makes the mode field of the on-chip optical waveguide match the mode field of the optical fiber; each optical interface is directly coupled to the input / output optical fiber. Figure 3 The electrodes in the chip connected by gold wire bonding can be interconnected by extending the edges of the electrodes, such as Figure 7 As shown in the figure. During chip packaging, the G and S pads are the RF connection ports between the chip and the outside world. The G pad is connected to the package tube shell, and the S pad is connected to the signal pin of the RF connector mounted on the tube shell. The pins of the feedthrough capacitor connected to the external reverse bias voltage (+3.3V) on the tube shell are soldered to the Vcc pad and the GND pad.

[0064] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not limiting. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present invention can be modified or replaced by equivalents without departing from the purpose and scope of the technical solutions, which should all be included in the scope of the claims of the present invention.

Claims

1. An ultra-low power radio frequency photonic transceiver chip for 6G communication base stations, characterized by: It includes a Si substrate, a buried SiO2 layer and a Si device layer; the buried SiO2 layer is arranged between the Si substrate and the Si device layer; the Si device layer is provided with a photoelectric detection unit, an electro-optical phase modulation unit, a high-frequency resistor, a radio frequency input and output interface, an optical input and output interface and an electrical input interface; The photoelectric detection unit is used to convert the input optical signal into a radio frequency signal and feed it to the antenna unit for transmission; The electro-optical phase modulation unit is used to modulate the input optical phase according to the radio frequency signal received by the antenna unit; The high-frequency resistor serves as a matching resistor for the photoelectric detection unit and as a load resistor for the electro-optical phase modulation unit; The radio frequency input and output interface, optical input and output interface and electrical input interface are used to provide corresponding interface channels for connecting the photoelectric detection unit, electro-optical phase modulation unit and high-frequency resistor with radio frequency signals, optical signals or electrical signals.

2. The ultra-low power consumption radio frequency photonic transceiver chip for a 6G communication base station according to claim 1, characterized in that: The optical input and output interface includes a first optical input and output interface, a second optical input and output interface, and an optical output interface.

3. The ultra-low power consumption radio frequency photonic transceiver chip for a 6G communication base station according to claim 2, characterized in that: The photoelectric detection unit adopts the germanium-on-silicon epitaxial growth process to form multiple germanium regions on the silicon waveguide, and an electrode-S is provided on the germanium region; it also includes a U-shaped electrode-G, which is arranged on the silicon waveguide to surround the electrode-S; the silicon waveguide is connected to the first optical input interface.

4. The ultra-low power consumption radio frequency photonic transceiver chip for a 6G communication base station according to claim 3, characterized in that: The electro-optical phase modulation unit includes a non-photosensitive benzocyclobutene (BCB) bonding layer and a silicon waveguide arranged at both ends of the BCB bonding layer, wherein a lithium niobate waveguide is provided at the upper end of the BCB bonding layer; optical coupling is achieved between the silicon waveguide and the lithium niobate waveguide via evanescent waves; a traveling wave electrode-S and a traveling wave electrode-G are provided on the lithium niobate waveguide; the silicon waveguide at one end is connected to the second optical input interface, and the silicon waveguide at the other end is connected to the optical output interface.

5. The ultra-low power consumption radio frequency photonic transceiver chip for a 6G communication base station according to claim 4, characterized in that: It includes a Vcc pad, which is an interface connecting the chip to the external reverse bias voltage and is connected to the electrode -G of the photoelectric detection unit to provide a reverse bias voltage for the photoelectric detection unit.

6. The ultra-low power consumption radio frequency photonic transceiver chip for a 6G communication base station according to claim 5, characterized in that: It includes a GND pad, which is the interface between the chip and the external ground, and is connected to the high-frequency resistor and the traveling wave electrode-G of the electro-optical phase modulation unit.

7. The ultra-low power consumption radio frequency photonic transceiver chip for a 6G communication base station according to claim 6, characterized in that: It includes the G pad and the S pad, which are the RF connection ports between the chip and the outside. The G pad is connected to the package shell on the outside and to the traveling wave electrode-G on the inside. The S pad is connected to the signal pin of the RF connector on the outside and to the traveling wave electrode-S on the inside.

8. The ultra-low power consumption radio frequency photonic transceiver chip for a 6G communication base station according to claim 7, characterized in that: One end of the high-frequency resistor is connected to the GND pad, and the other end is connected to the electrode-S of the photoelectric detection unit and the traveling wave electrode-S of the electro-optical phase modulation unit through gold wire bonding.

9. An ultra-low power radio frequency photon transceiver method for a 6G communication base station, characterized in that: The ultra-low power consumption radio frequency photonic transceiver chip according to any one of claims 1 to 8, comprising: Transmission: The RF signal to be transmitted in the remote equipment room is modulated onto an optical carrier and transmitted via optical fiber to the first optical input interface of the ultra-low power RF photonic transceiver chip. The photoelectric detection unit converts the optical signal into a RF signal. The RF signal is then fed to the antenna unit using the traveling wave electrode of the electro-optical phase modulation unit as a transmission line. Receiving: Another unmodulated laser beam in the remote equipment room is transmitted through another optical fiber to the second optical input interface of the ultra-low-power RF photonic transceiver chip, and then enters the electro-optical phase modulation unit. Its optical phase is modulated by the RF signal from the antenna unit and output through the optical output interface. It is then transmitted to the remote equipment room by a third optical fiber for demodulation to obtain the RF signal of the antenna unit.

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