Thermal desorption laser-assisted plasma source device and use method thereof

Abstract

The invention relates to the technical field of semiconductor device manufacturing, and provides a thermal desorption laser-assisted plasma source device and a use method thereof, the thermal desorption laser-assisted plasma source device comprises a metal shell, a ceramic tube, a grounding electrode and a cooling jacket; the cooling sleeve comprises a fixed seat, a control pipe and a control ball, the fixed seat is fixedly arranged on the metal shell, and a cavity is formed in the fixed seat; the control pipe is provided with two communicating holes, and the communicating holes are communicated with the cavity and the interior of the control pipe; the control ball is movably arranged in the control pipe, and the control ball blocks the communicating holes or blocks the position, located between the two communicating holes, in the control pipe. According to the plasma source device, the fixed seat, the control pipe and the control ball are arranged, and the control ball can block the communication hole or the control pipe by adjusting the control pipe, so that the flowing path of a cooling medium is rapidly changed, the cooling effect of the cooling sleeve is adjusted, and the plasma source device adapts to different use working conditions.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor device manufacturing, and in particular to a thermal desorption laser-assisted plasma source device and a method for using the same. Background Art

[0002] Plasma technology, as a powerful material processing method, has garnered widespread attention in recent years. Plasma is rich in active particles such as high-energy electrons, ions, and free radicals, capable of undergoing a series of complex physical and chemical reactions with material surfaces, such as etching, modification, and activation. It is widely used in the field of electronic device processing. For example, in semiconductor manufacturing, plasma etching is a key miniaturization method. By adjusting the gas composition (such as CF4, Cl2), power, and pressure, plasma can precisely remove specific material layers and achieve submicron-level pattern transfer. Compared with traditional wet etching, it offers advantages such as high anisotropy, low contamination, and strong controllability, making it suitable for processing structures such as trenches and isolation grooves in advanced chips.

[0003] Plasma source devices, or plasma generators, are equipped with cooling mechanisms to prevent electrode overheating and control plasma temperature during use. For example, patent publication CN116723623A discloses a plasma torch with self-assembled, split electrodes. This torch incorporates a first water-cooling layer within the anode housing and a second water-cooling layer within the cathode housing. Cooling media flowing through these first and second water-cooling layers cools the anode and cathode housings, respectively.

[0004] However, as the operating conditions of the plasma source device change, the required cooling effect will also change. If the cooling effect is changed by simply relying on the adjustment of the cooling medium circulation equipment, not only will the cooling response be delayed and the cooling effect cannot be changed quickly, but the local cooling performance cannot be changed, and the use requirements of the plasma source device cannot be met. Summary of the Invention

[0005] In view of this, the present invention proposes a thermal desorption laser-assisted plasma source device and a method of using the same, which can quickly adjust the cooling effect of the cooling jacket so that the plasma source device can quickly adapt to the operating conditions.

[0006] The technical solution of the present invention is implemented as follows: In the first aspect, the present invention provides a thermal desorption laser-assisted plasma source device and a method for using the same, comprising a metal shell, a ceramic tube, a grounding electrode and a cooling jacket, wherein an air inlet is provided on the circumferential side of the metal shell; the ceramic tube is fixedly arranged in the metal shell and spaced apart from the metal shell; the grounding electrode is fixedly arranged in the ceramic tube; the cooling jacket comprises a fixing seat, a control tube and a control ball, the fixing seat is fixedly arranged on the metal shell and has a cavity inside; the control tube is located in the cavity, both ends of which extend out of the fixing seat and are rotatably connected to the fixing seat, and two connecting holes are provided on the control tube, which are connected to the cavity and the interior of the control tube; the control ball is movably arranged in the control tube, and the control ball blocks the connecting hole or blocks a position in the control tube between the two connecting holes.

[0007] On the basis of the above technical solution, preferably, a plurality of cooling jackets are provided, the plurality of cooling jackets are arranged in contact with the axial direction of the metal shell, and the plurality of control pipes are sealed and connected in sequence.

[0008] On the basis of the above technical solution, preferably, the control tube includes a tube body, an extension tube and a blocking plate, wherein the tube body is located in the cavity, and both ends thereof are rotatably arranged on the fixed seat; one end of the extension tube is fixed on the circumferential side of the tube body, and the control ball is slidably arranged between the tube body and the extension tube; the blocking plate is sealed and fixed at one end of the extension tube away from the tube body.

[0009] Further preferably, the control tube also includes a sealing tube and two partitions, wherein the sealing tube is spaced apart at one end inside the tube body, and a medium hole is opened on its circumferential side, and the control ball can seal the sealing tube; the partition is sealed and fixed between the sealing tube and the tube body, and the two partitions are relatively arranged on both sides of the medium hole and one of the control balls.

[0010] More preferably, the cooling jacket further comprises a water receiving pipe, one end of which is fixedly arranged at the top of the cavity, and the other end of which is capable of sealingly communicating with the communicating hole.

[0011] More preferably, the cooling jacket further includes a water distribution pipe, which is annular and fixedly arranged in the cavity. A plurality of water distribution holes are opened on the circumference of the water distribution pipe, and the water distribution pipe can be sealed and connected with the connecting hole.

[0012] More preferably, one side of the tube body connected to the extension tube is W-shaped.

[0013] More preferably, the communicating hole is provided on the blocking plate.

[0014] More preferably, each of the blocking plates is provided with a plurality of the communicating holes, and the plurality of communicating holes on the same blocking plate are arranged in a circular array around the axis of the extension tube.

[0015] In a second aspect, the present invention provides a method for using a thermal desorption laser-assisted plasma source device, comprising the following steps: S1, connecting both ends of the control tube to a cooling medium circulation device, adjusting the position of the control ball, and controlling the flow direction of the cooling medium in the cooling jacket; S2, connecting the air inlet to a gas supply device to allow gas to flow into the metal shell; S3, connecting the metal shell to the high-voltage end of a power supply, grounding the ground electrode, and ionizing the gas molecules in the metal shell to generate plasma.

[0016] The thermal desorption laser-assisted plasma source device and its use method of the present invention have the following beneficial effects compared with the prior art: (1) By setting a fixing seat, a control tube and a control ball, and adjusting the control tube, the control ball can be used to block the connecting hole or the control tube to quickly change the flow path of the cooling medium and adjust the cooling effect of the cooling jacket, so that the plasma source device can be adapted to different operating conditions.

[0017] (2) By providing multiple cooling sleeves, the local cooling performance of the metal shell can be changed, thereby further improving the adaptability of the plasma source device.

[0018] (3) By setting up water receiving pipes and water distribution pipes, not only can the cooling medium quickly fill the cavity, but also the cooling uniformity of the cooling medium on the metal shell can be improved, thereby improving the cooling effect of the cooling jacket. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0020] Figure 1 This is a cross-sectional view of a thermal desorption laser-assisted plasma source device of the present invention.

[0021] Figure 2 The figure is a cross-sectional view of a cooling jacket in a thermal desorption laser-assisted plasma source device of the present invention.

[0022] Figure 3The invention discloses a cross-sectional view of a control tube of a thermal desorption laser-assisted plasma source device when the control tube is blocked by a control ball.

[0023] Figure 4 The invention discloses a cross-sectional view of a control tube of a thermal desorption laser-assisted plasma source device when the control ball blocks the communicating hole.

[0024] Figure 5 for Figure 3 Enlarged view of point B in the middle.

[0025] Figure 6 This is a three-dimensional diagram of a water distribution pipe in a thermal desorption laser-assisted plasma source device of the present invention.

[0026] Figure 7 This is a three-dimensional diagram of a water pipe in a thermal desorption laser-assisted plasma source device of the present invention.

[0027] Figure 8 for Figure 2 Enlarged view of point A in the middle.

[0028] Figure 9 This is an explosion diagram of a blocking plate in a thermal desorption laser-assisted plasma source device of the present invention.

[0029] Figure 10 This is a three-dimensional diagram of a thermal desorption laser-assisted plasma source device of the present invention.

[0030] Among them: 1. Metal shell; 101. Air inlet; 2. Ceramic tube; 3. Ground electrode; 4. Cooling jacket; 41. Fixed seat; 42. Control tube; 421. Tube body; 422. Extension tube; 423. Blocking plate; 424. Sealing tube; 425. Partition; 43. Control ball; 44. Water connecting pipe; 45. Water distribution pipe; 401. Cavity; 402. Connecting hole; 403. Medium hole; 404. Water distribution hole. DETAILED DESCRIPTION

[0031] The following will be combined with the specific embodiments of the present invention to clearly and completely describe the technical solutions of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0032] A thermal desorption laser-assisted plasma source device of the present invention comprises a metal shell 1, a ceramic tube 2, a ground electrode 3 and a cooling jacket 4, and is used for generating plasma.

[0033] like Figure 1As shown, the metal shell 1 is connected to the high-voltage end of the power supply, and an air inlet 101 is opened on its peripheral side. The ceramic tube 2 is fixedly arranged in the metal shell 1, and the outer side of the ceramic tube 2 is spaced apart from the inner wall of the metal shell 1. The grounding electrode 3 is fixedly arranged in the ceramic tube 2 and grounded. An electric field is formed between the grounding electrode 3 and the metal shell 1, thereby ionizing the gas to generate plasma.

[0034] The cooling sleeve 4 is put on the outside of the metal shell 1. During the use of the present plasma source device, the cooling sleeve 4 is used to cool the metal shell 1, which can not only prevent the electrode from overheating, but also control the temperature of the plasma, so as to cooperate with the laser technology to achieve precise control of the plasma temperature.

[0035] The cooling jacket 4 includes a fixing seat 41, a control pipe 42, a control ball 43, a water receiving pipe 44 and a water distribution pipe 45. The fixing seat 41 is fixedly arranged on the metal shell 1 and has a cavity 401 inside. The control pipe 42 is located in the cavity 401. Both ends of the control pipe 42 extend out of the fixing seat 41 and are connected to the cooling medium circulation equipment. The control pipe 42 is rotatably connected to the fixing seat 41. Two connecting holes 402 are provided on the control pipe 42. The connecting holes 402 are connected with the cavity 401 and the interior of the control pipe 42. The control ball 43 is movably arranged in the control pipe 42, and the control ball 43 can block the connecting hole 402 and the position between the two connecting holes 402 in the control pipe 42; when When the control ball 43 blocks the position between the two connecting holes 402 in the control tube 42, the cooling medium first enters the control tube 42 from one end of the control tube 42, then flows into the cavity 401 through one of the connecting holes 402, and then flows back to the control tube 42 through the other connecting hole 402, and flows back to the cooling medium circulation equipment from the other end of the control tube 42; and when the control ball 43 blocks the connecting hole 402, the cooling medium first enters the control tube 42 from one end of the control tube 42, then flows to the other end of the control tube 42, and flows back to the cooling medium circulation equipment from the other end of the control tube 42 without passing through the cavity 401, thereby achieving two cooling effects.

[0036] The fixing seat 41 is preferably in the shape of a circular ring, and the cavity 401 is also in the shape of a circular ring. When the cooling medium flows through the cavity 401 , a stable and uniform cooling effect can be provided for the metal housing 1 .

[0037] like Figure 2 As shown, one end of the water receiving pipe 44 is fixedly arranged at the top of the cavity 401, and the other end of the water receiving pipe 44 can be sealed and connected with the connecting hole 402 near the water outlet of the control pipe 42. Since the end of the water receiving pipe 44 away from the connecting hole 402 is located at the top of the cavity 401, the bubbles in the cavity 401 can be quickly and thoroughly eliminated to ensure the cooling effect of the cooling jacket 4.

[0038] like Figure 7 As shown, the middle position of the water receiving pipe 44 is preferably annular, so that the cooling medium flowing back into the water receiving pipe 44 can evenly pass through the outside of the metal shell 1, further improving the cooling uniformity of the cooling jacket 4.

[0039] like Figure 2 As shown, the water distribution pipe 45 is annular and is coaxially arranged with the metal shell 1. The water distribution pipe 45 is fixedly arranged in the cavity 401. A plurality of water distribution holes 404 are opened on the circumferential side of the water distribution pipe 45, and the water distribution pipe 45 is sealed and connected with the connecting hole 402. It is preferred that the plurality of water distribution holes 404 are arranged in a circular array around the axis of the metal shell 1, so that the cooling medium sprayed from the water distribution holes 404 can evenly contact the position on the fixing seat 41 connected to the metal shell 1, thereby improving the cooling uniformity of the cooling jacket 4.

[0040] like Figure 1 and Figure 10 As shown, a plurality of cooling sleeves 4 are provided, and the plurality of cooling sleeves 4 are arranged in contact with the axial direction of the metal shell 1, and a plurality of control tubes 42 are sealed and connected in sequence. By adjusting the position of the control ball 43 in each cooling sleeve 4, different cooling effects can be achieved, and the local cooling performance of the metal shell 1 can be adjusted.

[0041] As a preferred embodiment, the control tube 42 includes a tube body 421, an extension tube 422, a plugging plate 423, a blocking tube 424 and two partitions 425. The tube body 421 is located in the cavity 401, and both ends of the tube body 421 are rotatably set on the fixed seat 41, one end of the extension tube 422 is fixed on the peripheral side of the tube body 421, and the plugging plate 423 is sealed and fixed to the end of the extension tube 422 away from the tube body 421. The connecting hole 402 can be opened on the plugging plate 423, and can also be opened on the peripheral side of the extension tube 422 near the plugging plate 423. The control ball 43 is slidably set between the tube body 421 and the extension tube 422. When the tube body 421 rotates to the position as shown in FIG. Figure 4 When in the position shown, the control ball 43 slides into the extension tube 422, so that the connecting hole 402 is not connected to the interior of the tube body 421, thereby allowing the cooling medium input from one end of the tube body 421 to flow out along the other end of the tube body 421, reducing the cooling effect of the cooling jacket 4.

[0042] The blocking tube 424 is spaced apart at one end of the tube body 421. A medium hole 403 is opened on the peripheral side of the blocking tube 424. A partition 425 is sealed and fixed between the blocking tube 424 and the tube body 421. The two partitions 425 are relatively arranged on both sides of the medium hole 403. One of the control balls 43 is located on the same side of the two partitions 425, and the other control ball 43 is located between the two partitions 425. When the tube body 421 rotates to the position as shown in FIG. Figure 3 and Figure 5When in the position shown, the cooling medium entering the left end of the tube body 421 impacts the control ball 43 to block the blocking tube 424, thereby blocking the position between the two connecting holes 402 on the control tube 42. At this time, the cooling medium entering the left end of the tube body 421 first flows into the cavity 401 through the left connecting hole 402. After the cooling medium fills the cavity 401, the cooling medium in the cavity 401 flows into the right side of the tube body 421 through the right connecting hole 402, and finally flows into the blocking tube 424 along the medium hole 403, and then flows back to the cooling medium circulation device along the right end of the blocking tube 424. At this time, the cooling effect of the cooling jacket 4 is optimal.

[0043] like Figure 4 As shown, it is preferred that the side of the tube body 421 connected to the extension tube 422 is W-shaped, that is, the height of the position where the bottom side of the tube body 421 is connected to the extension tube 422 is the lowest, which can guide the control ball 43 so that the control ball 43 can slide smoothly into the extension tube 422.

[0044] It is preferred that the connecting hole 402 is opened on the blocking plate 423 so that the control ball 43 can more easily block the connecting hole 402. Figure 8 and Figure 9 As shown, each blocking plate 423 is provided with a plurality of communicating holes 402 , and the plurality of communicating holes 402 on the same blocking plate 423 are arranged in a circular array around the axis of the extension tube 422 , thereby ensuring the passing rate of the cooling medium.

[0045] like Figure 8 and Figure 9 As shown, the blocking plate 423 is a structure with a high middle and low ends. When the control tube 42 rotates to Figure 3 When the control tube 42 is in the position shown, the two blocking plates 423 are sealed and communicated with the lower ends of the water receiving pipe 44 and the water distribution pipe 45 respectively, so that the cooling medium can quickly and evenly cool the metal shell 1. Figure 4 When the cooling plate 423 is in the position shown, the blocking plate 423 is separated from the water receiving pipe 44 and the water distribution pipe 45 , and the cooling effect does not need to be improved through the water receiving pipe 44 and the water distribution pipe 45 .

[0046] The method for using a thermal desorption laser-assisted plasma source device of the present invention is as follows: S1, connect the two ends of the control tube 42 to the water inlet and outlet pipes of the cooling medium circulation equipment respectively, and adjust the position of the control ball 43 by rotating the tube body 421, and move the control ball 43 to the position as shown in the figure. Figure 3 or Figure 4 The positions shown are used to control the flow direction of the cooling medium in the cooling jacket 4 to achieve different cooling effects.

[0047] S2, connecting the gas inlet 101 to the gas supply equipment to allow the gas to flow into the metal housing 1, and adjusting the flow rate and pressure of the gas to meet actual needs. The gas is preferably helium.

[0048] S3, connect the metal shell 1 to the high-voltage end of the power supply, ground the ground electrode 3, slowly increase the voltage, and adjust the power supply voltage, frequency, flow rate and pressure of the working gas and other parameters according to actual needs, so that the gas molecules in the metal shell 1 are ionized and plasma is generated.

[0049] Plasma technology plays a vital role in the field of electronic device manufacturing.

[0050] Plasma etching is a key miniaturization method in semiconductor manufacturing. By adjusting the gas composition (such as CF4, Cl2), power, and pressure, plasma can precisely remove specific material layers and achieve submicron pattern transfer. Compared with traditional wet etching, it has advantages such as high anisotropy, low pollution, and strong controllability. It is suitable for processing structures such as trenches and isolation grooves in advanced chips. In plasma-enhanced chemical vapor deposition (PECVD) or physical vapor deposition (PVD), plasma excites precursor gases, promoting the growth of thin films on substrate surfaces. For example, the deposition of insulating layers such as silicon dioxide and silicon nitride, as well as metal interconnects, relies on this technology, significantly improving film uniformity, density, and adhesion. Chemical vapor deposition (CVD) can grow single-crystal silicon epitaxial layers, providing high-quality substrates for transistor manufacturing.

[0051] Plasma cleaning utilizes reactive species (such as oxygen ions and free radicals) to react with surface contaminants, removing organic residues, oxides, or particles without damaging the substrate. This process improves bond strength and reduces contact resistance, making it essential for wafer cleaning prior to semiconductor packaging. Plasma can also be used for surface activation (e.g., increasing hydrophilicity) or passivation, optimizing compatibility with subsequent processes.

[0052] With the continuous advancement of science and technology, the requirements for sample pretreatment technologies are increasing in many fields, including materials science, environmental science, and chemical analysis. Traditional thermal desorption methods often suffer from low desorption efficiency, long operation times, and difficulty in achieving precise control when processing certain complex samples. For example, when thermally desorbing solid samples containing large amounts of volatile organic compounds (VOCs), conventional heating methods can result in uneven heating of the sample, preventing the full desorption of some components. Furthermore, the desorption process can trigger side reactions, affecting the accuracy of subsequent analytical tests.

[0053] Plasma technology, as a powerful material processing method, has garnered widespread attention in recent years. However, relying solely on plasma for sample processing can be challenging for samples that require specific temperature environments to effectively release their components. For example, certain organic polymers require specific thermal conditions to encourage the diffusion of specific components within them, allowing them to interact with the plasma.

[0054] Laser technology, with its high energy density and precise focusing, enables rapid local heating of samples. However, in practical applications, laser heating alone cannot meet the needs of some scenarios requiring multiplexed processing. For example, when processing samples that contain components that can be released through thermal desorption and require further modification or reaction in a plasma environment, single laser heating or plasma treatment is insufficient.

[0055] By combining thermal desorption technology, laser technology and plasma technology, the various technologies can be coordinated, which is of great significance for improving the efficiency and quality of sample pretreatment and expanding its application in materials analysis, environmental monitoring, chemical research and other fields.

[0056] The in-situ ionization technology for drug residues uses a thermal desorption laser-assisted plasma source device, a three-dimensional movable stage, a heating plate fixed on the three-dimensional movable stage, and a laser-assisted heating device of the present invention, and the specific operation is as follows.

[0057] Liquid sample testing steps: S1, use standards to calibrate the mass spectrometer and plasma discharge parameters to ensure that the equipment is in an accurate detection state, and place the sample on the heating platform.

[0058] S2, allowing the plasma to act on the sample to be tested, and the mass spectrometer uses a single scan mode for detection to obtain the signal value.

[0059] S3, determine whether the signal value reaches the specified value. If the signal value does not reach the specified value, execute S4; if the signal value reaches the specified value, execute S6.

[0060] In step S4, the temperature of the heating platform is raised by 8-15°C and step S2 is repeated. If the temperature of the heating platform reaches the upper limit, step S5 is executed.

[0061] S5, heating the sample using a laser-assisted heating device, increasing the energy of the laser-assisted heating device by 0.5-1 W, and repeating S2.

[0062] S6: Save the current detection method and output the mass spectrometry detection results. The detection method includes mass spectrometry parameters, gas flow rate, current and voltage parameters of the plasma torch, heating platform heating temperature, and energy of the laser-assisted heating device.

[0063] Solid sample testing steps: S1, use standards to calibrate the mass spectrometer and plasma discharge parameters to ensure that the equipment is in an accurate detection state, and place the sample on the heating platform.

[0064] S2, set the sample range and target mass spectrometry ion pairs, let the plasma act on the sample to be tested, use the three-dimensional moving stage to drive the sample to be tested to move back and forth, and make the mass spectrometer use continuous scanning mode for detection to obtain the signal value.

[0065] S3, determine whether the signal value reaches the specified value. If the signal value does not reach the specified value, execute S4; if the signal value reaches the specified value, execute S6.

[0066] In step S4, the temperature of the heating platform is raised by 8-15°C and step S2 is repeated. If the temperature of the heating platform reaches the upper limit, step S5 is executed.

[0067] S5, heating the sample using a laser-assisted heating device, increasing the energy of the laser-assisted heating device by 0.5-1 W, and repeating S2.

[0068] S6: Save the current detection method and output the mass spectrometry detection results. The mass spectrometry data is reconstructed into a mass spectrometry image, showing the concentration content at each location of the sample. The detection method includes mass spectrometry parameters, the gas flow rate, current and voltage parameters of the plasma torch, the heating platform heating temperature, and the energy of the laser-assisted heating device.

[0069] In some embodiments, the temperature range of the heating platform is 30-200°C, the energy of the laser-assisted heating device is 0.5W-3W, and the heating platform is heated by 10°C each time, and the energy of the laser-assisted heating device is increased by 0.5W each time.

[0070] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A thermal desorption laser-assisted plasma source device, characterized in that: It comprises a metal shell (1), a ceramic tube (2), a grounding electrode (3) and a cooling jacket (4), wherein: An air inlet (101) is provided on the circumferential side of the metal shell (1); The ceramic tube (2) is fixedly arranged in the metal shell (1) and spaced apart from the metal shell; The grounding electrode (3) is fixedly arranged in the ceramic tube (2); The cooling jacket (4) comprises a fixing seat (41), a control tube (42) and a control ball (43); the fixing seat (41) is fixedly arranged on the metal shell (1) and has a cavity (401) therein; the control tube (42) is located in the cavity (401), with both ends extending out of the fixing seat (41) and being rotatably connected thereto; two communicating holes (402) are provided on the control tube (42), and the communicating holes (402) are connected to the cavity (401) and the interior of the control tube (42); the control ball (43) is movably arranged in the control tube (42), and the control ball (43) blocks the communicating holes (402) or blocks a position in the control tube (42) between the two communicating holes (402).

2. The thermal desorption laser-assisted plasma source device according to claim 1, characterized in that: A plurality of cooling sleeves (4) are provided, and the plurality of cooling sleeves (4) are arranged in contact with the axial direction of the metal shell (1), and the plurality of control pipes (42) are sealed and connected in sequence.

3. The thermal desorption laser-assisted plasma source device according to claim 1, characterized in that: The control tube (42) comprises a tube body (421), an extension tube (422) and a blocking plate (423), wherein: The tube body (421) is located in the cavity (401), and both ends thereof are rotatably mounted on the fixing seat (41); One end of the extension tube (422) is fixed on the circumference of the tube body (421), and the control ball (43) is slidably arranged between the tube body (421) and the extension tube (422); The blocking plate (423) is sealed and fixed to an end of the extension tube (422) away from the tube body (421).

4. The thermal desorption laser-assisted plasma source device according to claim 3, characterized in that: The control tube (42) further includes a blocking tube (424) and two partitions (425), wherein: The blocking tube (424) is spaced apart at one end of the tube body (421), and a medium hole (403) is provided on the peripheral side thereof. The control ball (43) can block the blocking tube (424); The partition (425) is sealed and fixed between the blocking tube (424) and the tube body (421), and the two partitions (425) are arranged oppositely on both sides of the medium hole (403) and one of the control balls (43).

5. The thermal desorption laser-assisted plasma source device according to claim 4, characterized in that: The cooling jacket (4) further comprises a water receiving pipe (44), one end of which is fixedly arranged at the top of the cavity (401), and the other end of which is capable of being sealed and connected to the communication hole (402).

6. The thermal desorption laser-assisted plasma source device according to claim 5, characterized in that: The cooling jacket (4) further includes a water distribution pipe (45), which is annular and fixedly disposed in the cavity (401). A plurality of water distribution holes (404) are provided on the circumference of the water distribution pipe (45), and the water distribution pipe (45) can be sealed and connected to the communication hole (402).

7. The thermal desorption laser-assisted plasma source device according to claim 4, characterized in that: The side of the tube body (421) connected to the extension tube (422) is W-shaped.

8. The thermal desorption laser-assisted plasma source device according to claim 3, characterized in that: The communicating hole (402) is provided on the blocking plate (423).

9. The thermal desorption laser-assisted plasma source device according to claim 8, characterized in that: A plurality of the communicating holes (402) are provided on each blocking plate (423), and the plurality of communicating holes (402) on the same blocking plate (423) are arranged in a circular array around the axis of the extension tube (422).

10. A method for using the thermal desorption laser-assisted plasma source device according to any one of claims 1 to 9, characterized in that: The following steps are involved: S1, connecting both ends of the control tube (42) to the cooling medium circulation device, adjusting the position of the control ball (43), and controlling the flow direction of the cooling medium in the cooling jacket (4); S2, connecting the air inlet (101) to a gas supply device to allow gas to flow into the metal housing (1); S3, connecting the metal shell (1) to the high voltage terminal of a power supply, and grounding the ground electrode (3), so that the gas molecules in the metal shell (1) are ionized to generate plasma.

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