Plasma generating device and plasma enhanced atomic layer deposition apparatus

Abstract

The application discloses a kind of plasma generating device and plasma enhanced atomic layer deposition equipment, wherein a kind of plasma generating device, including plasma generating module and variable distance module;The plasma generating module includes reaction tube and coil, and the coil is wound outside the reaction tube;The variable distance module includes several movable sliders, and the coil wound outside the reaction tube is connected with the slider;When the slider moves, each coil wound is moved by the slider.Due to the different deposition processes require different plasma density and intensity, variable distance module changes the distance between each coil, and then changes the strength of induced magnetic field, changes the characteristics of plasma, induction efficiency etc.by the strength of induced magnetic field.Changing the position of coil as a whole by variable distance module, so as to change the height between coil and sample, and then affect the plasma density reaching sample.Process flexibility is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor and semiconductor atomic layer deposition equipment, more particularly to a plasma generating device and a plasma enhanced atomic layer deposition equipment. BACKGROUND

[0002] The plasma enhanced atomic layer deposition equipment is a common thin film deposition equipment, which is widely used in the fields of semiconductor, semiconductor, optics, biomedicine, etc. due to its precise deposition rate, low substrate damage and high deposition uniformity. However, the plasma coil in the existing equipment is difficult to adjust, which limits the process flexibility of the equipment: the unadjustable coil means that it is difficult to optimize the characteristics of the plasma according to different materials and process requirements during the deposition process. For example, different precursors and substrate materials may require different intensity and energy of plasma to achieve the best deposition effect, and the unadjustable coil limits the optimization space of process parameters. At the same time, the unadjustable plasma coil also makes it difficult to optimize the film quality: the characteristics of the plasma directly affect the growth rate, uniformity and quality of the film. The unadjustable plasma coil may cause uneven distribution of the plasma on the substrate, which in turn affects the uniformity and consistency of the film, especially on large-area substrates or substrates with complex geometry. SUMMARY

[0003] The present application provides a plasma generating device and a plasma enhanced atomic layer deposition equipment to solve the problem of the unadjustable plasma coil in the existing plasma enhanced atomic layer deposition equipment.

[0004] To achieve the above-mentioned purpose, the technical scheme provided by the present application is as follows:

[0005] A plasma generating device, comprising a plasma generating module and a variable distance module;

[0006] The plasma generating module comprises a reaction tube and a coil, and the coil is wound outside the reaction tube;

[0007] The variable distance module comprises a plurality of movable sliders, each coil wound outside the reaction tube is connected to one slider, or each coil wound outside the reaction tube is provided with one slider on both sides;

[0008] When the slider moves, it drives each coil wound to move and change the distance or height of the coil.

[0009] As a further improvement, the slider is connected to a worm, and a plurality of spiral lead grooves are formed on the worm, each slider is connected to one spiral lead groove through a guide block; when the worm rotates, it drives the slider to move with different strokes.

[0010] As a further improvement, one end of the reaction tube is sealingly connected with a venting flange, and the other end is sealingly connected with a water-cooling flange;

[0011] A venting valve is connected to the venting flange for injecting source gas;

[0012] A flange opening is formed in the water-cooling flange and communicates with the inner chamber of the reaction tube.

[0013] As a further improvement, a shielding shell is sleeved outside the reaction tube; a first opening is formed in one side of the shielding shell for the sliding block to pass through, and a second opening is formed in the other side for the two ends of the coil to pass through;

[0014] The two ends of the coil extend outside the shielding shell and are connected with a clamping assembly; the clamping assembly comprises a clamping support and two clamping devices slidingly connected to the clamping support; the two ends of the coil are connected with the clamping devices, respectively.

[0015] The application also provides a plasma enhanced atomic layer deposition device comprising the plasma generating device, further comprising an introduction cavity, a main cavity and a secondary cavity which are sequentially arranged at one end of the reaction tube and coaxial with the reaction tube; further comprising a heating assembly, one end of the heating assembly is supported at one end of the secondary cavity, and the other end of the heating assembly extends into the main cavity through the other end of the secondary cavity.

[0016] As a further improvement, a heating disc is arranged at one end of the heating assembly in the main cavity; an auxiliary back gas passage is formed in the upper side of the heating disc, the auxiliary back gas passage communicates with a main back gas passage, and the main back gas passage is formed in the supporting rod of the heating assembly.

[0017] As a further improvement, an insulating ring is mounted on the upper side of the heating disc, and a conductive disc is mounted on the upper side of the insulating ring.

[0018] As a further improvement, an introduction pipeline is connected to the introduction cavity.

[0019] As a further improvement, a side cavity capable of being opened is arranged at one side of the main cavity, a needle valve is mounted above the side cavity, and the opening of the needle valve is arranged close to the connection between the main cavity and the side cavity.

[0020] As a further improvement, a butterfly valve, a gate valve and a molecular pump are sequentially connected at one side of the secondary cavity.

[0021] Compared with the prior art, the technical scheme provided by the application has the following beneficial effects:

[0022] (1) A plasma generating device of the present invention, since different deposition processes require different plasma densities and intensities, the variable pitch module changes the spacing between each coil turn, thereby changing the intensity of the induced magnetic field, and thus changing the plasma characteristics and induction efficiency by changing the intensity of the induced magnetic field. The variable pitch module can also adjust the position of the coil as a whole, thereby changing the height between the coil and the sample, and thus affecting the plasma density reaching the sample. This improves process flexibility, allowing users to flexibly adjust the intensity, energy distribution and density of the plasma according to different process requirements (such as different precursors, substrate materials or deposition rate requirements). It significantly improves the process adaptability of the equipment and the ability to optimize film quality.

[0023] (2) A plasma generating device of the present invention, wherein a coil is wound on a reaction tube to facilitate adjustment of the coil position.

[0024] (3) In a plasma generating device of the present invention, a clamping bracket and a clamping device are added, and the coil is convenient to be fixed after the coil position is adjusted.

[0025] (4) The plasma-enhanced atomic layer deposition apparatus of the present invention comprises multiple sections arranged coaxially from top to bottom, including a plasma generator, an inlet chamber, a main chamber, and a secondary chamber. Precursor gas enters through the inlet pipe and flows downwards towards the sample. Plasma flows downwards from the plasma generator towards the sample. This design features a simple structure and allows for unobstructed flow of both precursor gas and plasma towards the sample, improving the utilization rate of precursor materials and reducing material waste.

[0026] (5) The plasma-enhanced atomic layer deposition apparatus of the present invention is compatible with multiple process modes. The heating component enables the apparatus to support multiple process modes such as thermal deposition and plasma-enhanced deposition simultaneously. Users can select the most suitable process according to specific needs, thereby improving the versatility of the apparatus.

[0027] (6) A plasma-enhanced atomic layer deposition apparatus of the present invention is provided with a side cavity, and a needle valve is installed above the side cavity. The opening of the needle valve is located near the connection between the main cavity and the side cavity. During the deposition process, the needle valve introduces a gas compatible with the deposition material to form a gas shield between the main cavity and the side cavity, preventing the precursor gas from flowing to the side near the side cavity and generating a large amount of accumulation. Attached Figure Description

[0028] Figure 1 This is a schematic diagram of the overall structure of the deposition equipment;

[0029] Figure 2 This is another schematic diagram of the overall structure of the deposition equipment;

[0030] Figure 3 This is a cross-sectional view of the overall structure of the deposition equipment;

[0031] Figure 4 schematic diagram of a heating assembly;

[0032] Figure 5 enlarged view of the heating assembly A-A section;

[0033] Figure 6 top view of the heating disc;

[0034] Figure 7 schematic diagram of the structure of the heating assembly in another case;

[0035] Figure 8 schematic diagram of the structure of the heating assembly in another case; Figure 7 enlarged view of the heating assembly A;

[0036] Figure 9 schematic diagram of a plasma generating module;

[0037] Figure 10 schematic diagram of a plasma generating module from another angle;

[0038] Figure 11 schematic diagram of a plasma generating module from another angle;

[0039] Figure 12 schematic diagram of a plasma generating module from another angle.

[0040] Explanation of reference numerals:

[0041] 100, sample;

[0042] 1, molecular pump; 2, gate valve; 3, butterfly valve; 4, auxiliary cavity; 5, main cavity; 501, side cavity; 502, needle valve; 6, introduction cavity; 601, introduction pipeline;

[0043] 7, plasma generating module; 701, shielding shell; 702, first opening; 703, second opening; 704, reaction tube; 705, water-cooled flange; 7051, flange opening; 7052, cooling pipe; 707, coil; 708, breather valve; 709, breather flange; 710, connecting screw;

[0044] 8, variable distance module; 801, sliding block; 9, heating assembly; 901, heating disc; 9011, main back gas passage; 9012, first auxiliary back gas passage; 9013, second auxiliary back gas passage; 902, retaining ring; 903, insulating ring; 904, conductive disc;

[0045] 101, clamping support; 102, clamp. DETAILED DESCRIPTION

[0046] In order to further understand the content of the present application, the present application will be described in detail in conjunction with the drawings and examples.

[0047] The structure, proportion, size, etc. shown in the drawings of the specification are only used to cooperate with the content disclosed in the specification, to be understood and read by those skilled in the art, and do not have technical substantive significance, and any modification of the structure, change of the proportion relationship, or adjustment of the size, without affecting the effects and purposes that can be achieved by the application, should still fall within the scope of the disclosed technology.

[0048] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above drawings are used to distinguish similar objects, and do not necessarily describe a specific order or sequence. It should be understood that the data thus used can be interchanged under appropriate circumstances, so that the embodiments of the application described herein.

[0049] In the present application, the orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", "front", "back", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal", etc. is based on the orientation or positional relationship shown in the drawings. These terms are mainly used to better describe the present application and its embodiments, and are not used to limit the indicated devices, elements or components to have a specific orientation, or to be constructed and operated in a specific orientation. In addition, in addition to indicating the orientation or positional relationship, the above-mentioned terms can also be used to indicate other meanings, for example, the term "upper" can also be used to indicate a certain attachment relationship or connection relationship in some cases. For those skilled in the art, the specific meaning of these terms in the present application can be understood according to the specific circumstances.

[0050] As shown in Figures 9-12 , the present embodiment provides a plasma generating device applied to a thin film deposition equipment, which comprises a plasma generating module 7 and a variable distance module 8.

[0051] The plasma generating module 7 comprises a reaction tube 704 and a coil 707, and the coil 707 is wound outside the reaction tube 704. The variable distance module 8 comprises a plurality of movable sliding blocks 801, and the coil 707 wound outside the reaction tube 704 is connected with the sliding blocks 801; when the sliding blocks 801 move, each coil wound is moved to change the distance or height of the coil 707.

[0052] In the present embodiment, as shown in Figure 12 , each coil 707 wound outside the reaction tube 704 corresponds to a sliding block 801. However, in some other embodiments, as shown in Figure 11 , each coil 707 wound outside the reaction tube 704 is provided with a sliding block 801 on both sides.

[0053] In this embodiment, the reaction tube 704 is a quartz tube with a cavity inside. Four coils 707 are wound outside the reaction tube 704, and each coil 707 is connected to a slider 801. Four sliders 801 are arranged in the variable distance module 8.

[0054] In a thin film deposition device, source gas is introduced into the reaction tube 704, and the coil 707 is connected to an induction coil to introduce a radio frequency signal. The coil 707 generates a high-frequency alternating magnetic field in the reaction tube 704. The source gas in the induction magnetic field accelerates free electrons, which gain enough energy to collide with gas molecules, thereby ionizing the gas and generating plasma. Different deposition processes require different plasma densities and intensities. Each coil 707 is connected to a slider 801. When the slider 801 moves, it drives each coil to move, thereby changing the distance between each coil, and further changing the strength of the induction magnetic field. By changing the strength of the induction magnetic field, the characteristics and induction efficiency of the plasma are changed. In addition, the variable distance module 8 can also adjust the position of the coil 707 as a whole, thereby changing the height between the coil 707 and the sample 100, and further affecting the plasma density reaching the sample.

[0055] In combination Figure 9 and Figure 12 As shown in the variable distance module 8 also includes a base, a variable distance assembly 802 and a lifting assembly 803. The lifting assembly 803 is installed on the base, and the variable distance assembly 802 is connected to the lifting assembly 803. Specifically, the lifting assembly 803 includes a sliding rail and a lifting slider moving along the sliding rail. The lifting slider is vertically installed on the base. When the lifting slider moves, it drives the variable distance assembly 802 to move up and down, thereby changing the height between the coil 707 and the sample 100 through the lifting assembly 803, and further affecting the plasma density reaching the sample. On the other hand, the variable distance assembly 802 includes four sliders 801. Each slider 801 is installed on a guide rod arranged vertically. Meanwhile, the slider 801 is also connected to a guide block. The other end of the guide block is connected to a worm. Specifically, four spiral lead grooves are formed on the worm. When the worm rotates, the guide block moves along the lead groove, thereby driving the slider 801 to slide along the guide rod, and changing the distance between the sliders 801. By changing the lead of each coil through the slider 801, the Faraday electromagnetic induction strength of the coil 707 is changed. When the lifting assembly 803 drives the variable distance assembly 802 to move up and down, it further drives the slider 801 to move, thereby changing the height of the coil 707.

[0056] As Figure 12As shown, one end of the reaction tube 704 is sealingly connected to the vent flange 709, and the other end is sealingly connected to the water-cooled flange 705. The vent flange 709 is connected to the vent valve 708 for injecting source gas, and the water-cooled flange 705 is provided with a flange opening 7051 communicating with the inner chamber of the reaction tube 704.

[0057] The vent flange 709 and the water-cooled flange 705 are respectively provided with grooves for mounting the sealing ring at the contact position with the reaction tube 704. The vent flange 709 and the water-cooled flange 705 are connected by the connecting screw 710, and the reaction tube 704 is located between the vent flange 709 and the water-cooled flange 705. When the connecting screw 710 is tightened, the reaction tube 704 and the vent flange 709 extrude the sealing ring, and the reaction tube 704 and the water-cooled flange 705 extrude the sealing ring, so that one end of the reaction tube 704 is sealingly connected to the vent flange 709, and the other end is sealingly connected to the water-cooled flange 705.

[0058] The water-cooled flange 705 is also provided with a cooling pipe 7052 through which cooling liquid is passed to cool the water-cooled flange 705. In addition, the base of the variable distance module 8 is also fixedly installed on the water-cooled flange 705, thereby supporting and fixing the variable distance module 8.

[0059] In combination Figure 9 and Figure 12 As shown, the reaction tube 704 is sleeved with the shielding shell 701. The shielding shell 701 is provided with a first opening 702 on one side for the sliding block 801 to pass through, and a second opening 703 on the other side for the two ends of the coil 707 to pass through.

[0060] After the coil 707 is wound on the reaction tube 704, the two ends thereof extend out of the shielding shell 701 and are connected to the clamping assembly. The clamping assembly includes a clamping support 101 and two clamping devices 102 slidingly connected to the clamping support 101, and the two ends of the coil 707 are connected to the clamping devices 102. The clamping support 101 is fixed on the water-cooled flange 705. The clamping device 102 includes a clamping base and a clamping block. The clamping base is installed on the clamping support 101, and the clamping block is locked on the clamping base by bolts, and the coil 707 can be clamped between the clamping base and the clamping block. The position of the clamping base on the clamping support 101 can be adjusted. On the one hand, the distance between the two clamping devices 102 is changed to adjust the distance between each coil by cooperating with the sliding block 801; on the other hand, the height of the two clamping devices 102 can be adjusted at the same time to adjust the height of the coil 707 by cooperating with the lifting assembly 803.

[0061] It should be noted that in some other embodiments, when the sliding block 801 is arranged on both sides of each coil 707 wound outside the reaction tube 704, the shape of the sliding block 801 can be arc-shaped, which can cooperate with the outside of the reaction tube 704 and have more contact area with the coil 707 when moving, thereby facilitating the adjustment of the spacing of the coils.

[0062] As shown in Figures 1-3 , the application also provides a plasma enhanced atomic layer deposition device, which comprises the plasma generating device and further comprises an introduction cavity 6, a main cavity 5 and a secondary cavity 4 arranged in sequence at one end of the reaction tube 704 and coaxially arranged with the reaction tube 704. Specifically, the lower end of the reaction tube 704 is sealingly connected to the introduction cavity 6 through a connecting flange, and a flange opening 7051 is formed on the water-cooled flange 705, and an opening is also formed on the connecting flange at this position, so that the inner chamber of the reaction tube 704 is in communication with the inner chamber of the introduction cavity 6. The lower end of the introduction cavity 6 is also sealingly connected to the main cavity 5 through a flange, and an opening is also formed on the flange, so that the inner chamber of the introduction cavity 6 is in communication with the inner chamber of the main cavity 5. The lower end of the main cavity 5 is also sealingly connected to the secondary cavity 4 through a flange, and an opening is also formed on the flange, so that the inner chamber of the main cavity 5 is in communication with the inner chamber of the secondary cavity 4.

[0063] The deposition device further comprises a heating assembly 9, one end of the heating assembly 9 is supported and connected to the lower end of the secondary cavity 4, and the other end of the heating assembly 9 extends into the main cavity 5 through the upper end of the secondary cavity 4 (as shown in the view direction in Figure 3 ).

[0064] The heating assembly 9 comprises a support rod and a heating disc 901, one end of the support rod is supported at the lower end of the secondary cavity 4, and the heating disc 901 is located at the other end of the support rod. The support rod extends into the main cavity 5 through the secondary cavity 4, and simultaneously plays a guiding role for the gas. Specifically, the heating disc 901 is arranged at one end of the heating assembly 9 located in the main cavity 5, and an auxiliary back gas passage is formed on the upper side of the heating disc 901, which is in communication with a main back gas passage 9011 formed at the center of the support rod of the heating assembly 9.

[0065] As shown in Figure 4 , Figure 5 and Figure 6 , the auxiliary back gas passage comprises a plurality of first auxiliary back gas passages 9012 in straight line shape and a plurality of second auxiliary back gas passages 9013 in circular arc shape. The first auxiliary back gas passages 9012 are arranged radially along the heating disc 901 and are in communication with the main back gas passage 9011, and the second auxiliary back gas passages 9013 are arranged circumferentially along the heating disc 901 and are in communication with the first auxiliary back gas passages 9012.

[0066] The heating assembly 9 is mainly used for heating the sample or applying a bias to the sample for cleaning or auxiliary deposition.

[0067] When heated, the sample 100 is placed on the heating disc 901. The heating disc 901 is also distributed with heating wires for heating the upper surface of the heating disc 901. The heating disc 901 is also provided with a cooling channel for stabilizing the temperature of the heating disc 901 and cooling the heating disc 901. Due to the influence of machining precision, the heating disc 901 and the sample 100 cannot completely adhere to each other, and usually make contact at multiple points to realize heat conduction between the two. By arranging the main back gas channel 9011 and the auxiliary back gas channel on the upper surface of the heating disc 901, the diameter is about 0.5 mm, the uniform heating and cooling of the sample 100 placed above are realized. The gas flows into the main back gas channel 9011, spreads through the auxiliary back gas channel, and uniformly spreads to the back of the sample 100. The heating disc 901 combines with the gas to heat the sample, realizing the uniform heating and cooling of the sample. In addition, the outer periphery of the heating disc 901 is also provided with a stepped groove, and the blocking ring 902 is installed in the stepped groove. Because the heating disc 901 has pressure when the back gas is introduced, the contact surface between the sample 100 and the heating disc 901 will displace under the pressure of the gas, and the blocking ring 902 is needed to limit the radial position of the sample. The upper surface of the blocking ring 902 is 1-2 mm higher than the sample. In actual use, when the back gas with appropriate pressure and flow rate is introduced into the back of the sample 100, the sample 100 will be separated from the heating disc 901 by about 0-0.5 mm, and the blocking ring 902 can well constrain the position of the sample at this time.

[0068] In combination with Figure 7 and Figure 8 As shown, in another aspect, the back gas channel of the heating disc 901 is not introduced with back gas when a bias needs to be applied to the sample. The blocking ring 902 is removed in the heating assembly 9 in this case. The upper side of the heating disc 901 is provided with an insulating ring 903, and the upper side of the insulating ring 903 is provided with a conductive disc 904. Specifically, the insulating ring 903 is attached to the upper surface of the heating disc 901 for heat transfer of the heating disc 901. The insulating ring 903 needs to be made of a material with high thermal conductivity, such as alumina ceramic, 304 stainless steel, etc., which can achieve a thermal conductivity of 20-30 W / (m.k). The use of high thermal conductivity materials can better transfer the heat of the heating disc 901. The conductive disc 904 is arranged on the upper part of the insulating ring 903, and the conductive disc is made of conductive metal material. The middle of the conductive disc 904 is used for placing the sample. The insulating ring 903 and the conductive disc 904 can be fixedly connected to the heating disc 901 by bolts.

[0069] The sample 100 is located on the conductive disc 904, which is connected with the radio frequency electrode through a vacuum wire. The radio frequency signal is introduced from the radio frequency electrode, and then introduced into the conductive disc 904 through the wire connection of the radio frequency electrode to make the conductive disc 904 charged, and then transmitted to the sample 100 placed on the upper part to make the sample 100 charged, thereby generating a bias effect on the sample 100.

[0070] In combination Figure 6 As shown in the drawings, the introduction cavity 6 is connected with the introduction pipeline 601 in the present application. The introduction pipeline 601 is used for introducing the precursor gas. Preferably, the introduction pipeline 601 is arranged to be inclined relative to the axial center of the introduction cavity 6, so as to facilitate the precursor gas to flow towards the sample after being introduced.

[0071] One side of the main cavity 5 is provided with an openable side cavity 501, which is used for placing the sample into the main cavity 5 through the side cavity 501. Further, a needle valve 502 is installed above the side cavity 501, and the opening of the needle valve 502 is arranged close to the connection between the main cavity 5 and the side cavity 501.

[0072] One side of the auxiliary cavity 4 is connected with a butterfly valve 3, a gate valve 2 and a molecular pump 1 in sequence. Specifically, the butterfly valve 3 is connected with the auxiliary cavity 4, the butterfly valve 3 is connected with the gate valve 2, and the gate valve 2 is connected with the molecular pump 1.

[0073] Specifically, the main cavity 5 is a cylindrical vacuum sealed cavity made of corrosion-resistant 316L material, and a CF200 metal sealing interface is symmetrically arranged above and below for connecting the auxiliary cavity 4 and the introduction cavity 6 (CF is a sealing interface standard specially designed for vacuum systems, commonly used in vacuum pipeline connections. The metal gasket is used for compression sealing between two CF interfaces, which has excellent corrosion resistance and can withstand high temperature. During the thin film deposition process, the cavity part needs to be heated to 200-300℃). The side cavity 501 is used for cavity internal device maintenance and sample placement. Due to the arrangement of the side cavity 501, the precursor gas enters from the top, and the sample on the upper part will cause more material to be stacked on the side close to the side cavity 501, thereby affecting the thickness of the thin film close to the side and the film thickness uniformity of the whole sample. The needle valve 502 is installed above the side cavity 501, and the opening of the needle valve 502 is arranged close to the connection between the main cavity 5 and the side cavity 501. During the deposition process, the needle valve 502 is connected with the gas compatible with the deposition material to form a gas shield between the main cavity 5 and the side cavity 501, so as to prevent the precursor gas from flowing to the side close to the side cavity 501 and causing a large amount of accumulation. The opening of the side cavity 501 is connected with a cavity door through a hinge, and in order to realize vacuum sealing when the cavity door is closed, a sealing ring is installed around the cavity door.

[0074] The side of the auxiliary cavity 4 is provided with an expansion interface connected with the butterfly valve 3. The auxiliary cavity 4 is also connected with a vacuum gauge for monitoring the internal vacuum pressure. The auxiliary cavity 4 is also connected with a radio frequency electrode for connecting with the conductive disc 904. The butterfly valve 3 is used for controlling the vacuum pressure in the vacuum cavity (the butterfly valve controls the opening and closing size of the valve plate to stably control the pressure in the cavity), and the other side of the butterfly valve 3 is connected with the gate valve 2 for isolating the vacuum environment in each cavity to be independent. The other side of the gate valve 2 is connected with the molecular pump 1 for realizing a higher vacuum atmosphere in the cavity, so that the vacuum in the cavity is better, the impurity gas in the cavity is less, and the process is more stable.

[0075] The upper part of the main cavity 5 is connected with the introduction cavity 6, the introduction cavity 6 is connected with the introduction pipeline 601, and the introduction cavity 6 is also connected with a pressure sensor for monitoring the vacuum pressure in the cavity. In the scheme, the butterfly valve 3 is used to control the vacuum in the cavity. Different processes have different vacuum requirements. For example, when plasma cleaning is performed, the pressure is controlled at 0.2pa-2pa, and when the precursor gas is introduced for depositing a thin film, the pressure is controlled at 0.1pa-10pa.

[0076] In the scheme, the deposition device is divided into multiple sections from top to bottom, which are a plasma generating device, an introduction cavity 6, a main cavity 5 and an auxiliary cavity 4. The precursor gas can enter from the introduction pipeline 601 and flow downward to the sample 100. The plasma flows downward from the plasma generating device to the sample 100.

[0077] When the butterfly valve 3, the gate valve 2 and the molecular pump 1 are connected, the vacuum in the cavity reaches the process requirement. When the thin film is deposited, the needle valve 502 is opened, the gas is introduced, the precursor gas is blocked in the main cavity 5, and the material is reduced in the deposition near the side cavity 501.

[0078] It should be noted that the introduction cavity 6, the main cavity 5 and the auxiliary cavity 4 are connected by a CF sealing flange. The needle valve 502 and the side cavity 501, the auxiliary cavity 4 and the vacuum gauge, the auxiliary cavity 4 and the radio frequency electrode, the introduction cavity 6 and the pressure sensor are all sealed. In addition, the air pipeline and the cooling pipeline in the heating assembly 9 are also sealed with the parts. The above sealing connection can be achieved by existing methods, such as adding a sealing ring.

[0079] When the deposition device in the scheme is used, the cavity door of the side cavity 501 is opened, the sample 100 is placed on the upper part of the heating assembly 9. The butterfly valve 3, the gate valve 2 and the molecular pump 1 are opened to vacuumize the cavity, and the vacuum is controlled at high vacuum-5pa.

[0080] When the sample is cleaned, a fixed flow of argon is introduced through the vent valve 708, and the cavity pressure is monitored in real time by the pressure sensor. The fixed chamber pressure is between 0.2-2pa. Since different processes require different plasma density and intensity, the height of the coil 707 is controlled by the variable distance module 8 to control the distance of the plasma to the sample 100, and thus the intensity and uniformity of the plasma. In addition, the distance between each coil of the coil 707 is changed by the variable distance module 8 to change the plasma characteristics and induction efficiency. The variable distance module 8 is continuously adjusted to meet the process requirements. After the position adjustment is completed, the coil 707 is connected to the RF power source, and a high-frequency alternating magnetic field is generated around the coil 707 to generate plasma. The plasma freely moves to the sample 100 to bombard the sample for cleaning.

[0081] When thin film deposition is required, if the sample needs to be deposited at high temperature, the sample temperature needs to be raised to the process temperature by the heating assembly 9, and then the precursor gas is introduced through the inlet pipe 601. The pressure value of the pressure sensor is monitored to determine the concentration of the precursor gas, so that the sample and the precursor gas can fully react to deposit a layer of film on the surface of the sample.

[0082] In this scheme, when the thin film is deposited, the plasma is introduced at the same time to enhance the reactivity of the precursor, realize atomic-level film thickness and uniformity precision, and improve the performance of the thin film.

[0083] The terms "mounting", "setting", "provided with", and "connected" should be understood broadly. For example, it can be fixed connection, detachable connection, or integral structure; it can be mechanical connection, or electrical connection; it can be direct connection, or indirect connection through an intermediate medium, or internal communication between two devices, elements or components. Those skilled in the art can understand the specific meaning of the above terms in the present application according to the specific circumstances.

[0084] The above describes the present application and its embodiments in a schematic manner, which is not limited, and the drawings only show one of the embodiments of the present application, and the actual structure is not limited thereto. Therefore, if those skilled in the art are inspired by it, without departing from the purpose of the present application, they can design similar structure and embodiments without creativity, which should belong to the protection scope of the present application.

Claims

1. A plasma generating device, characterized by: The plasma generating module (7) and the variable distance module (8) are included. The plasma generating module (7) includes a reaction tube (704) and a coil (707) wound outside the reaction tube (704). The variable distance module (8) includes a plurality of movable sliders (801), each coil (707) wound outside the reaction tube (704) is connected to a slider (801), or each coil (707) wound outside the reaction tube (704) is provided with a slider (801) on both sides. When the slider (801) moves, each coil wound by the slider (801) moves to change the distance or height of the coil (707). The slider (801) is connected to a worm, a plurality of spiral grooves are formed on the worm, each slider (801) is connected to a spiral groove through a guide block. The outside of the reaction tube (704) is provided with a shielding shell (701), a first opening (702) is formed on one side of the shielding shell (701) for the slider (801) to pass through, and a second opening (703) is formed on the other side for the two ends of the coil (707) to pass through. The two ends of the coil (707) extend outside the shielding shell (701) and are connected to a clamping assembly, the clamping assembly includes a clamping support (101) and two clamping devices (102) slidably connected to the clamping support (101), and the two ends of the coil (707) are connected to the clamping devices (102), respectively.

2. The plasma generating device of claim 1, wherein: One end of the reaction tube (704) is sealingly connected to an air flange (709), and the other end is sealingly connected to a water cooling flange (705). The air flange (709) is connected to an air valve (708) for injecting source gas. The water cooling flange (705) is provided with a flange opening (7051) communicating with the inner chamber of the reaction tube (704).

3. A plasma-enhanced atomic layer deposition apparatus, characterized by: The plasma generating device of claim 1 or 2 further comprises an introduction cavity (6), a main cavity (5) and a secondary cavity (4) arranged in sequence at one end of the reaction tube (704) and coaxial with the reaction tube (704), and a heating assembly (9) supported at one end of the secondary cavity (4) and extending into the main cavity (5) through the other end of the secondary cavity (4).

4. The plasma-enhanced atomic layer deposition apparatus of claim 3, wherein: The heating assembly (9) is provided with a heating disc (901) at one end in the main cavity (5), an auxiliary back gas passage is formed on the upper side of the heating disc (901), the auxiliary back gas passage communicates with a main back gas passage (9011) formed on the support rod of the heating assembly (9).

5. The plasma-enhanced atomic layer deposition apparatus of claim 4, wherein: The upper side of the heating disc (901) is provided with an insulating ring (903), and the upper side of the insulating ring (903) is provided with a conductive disc (904).

6. The plasma-enhanced atomic layer deposition apparatus of claim 3, wherein: The introduction cavity (6) is connected to an introduction pipeline (601).

7. The plasma-enhanced atomic layer deposition apparatus of claim 3, wherein: One side of the main cavity (5) is provided with an openable side cavity (501), a needle valve (502) is installed above the side cavity (501), and the opening of the needle valve (502) is arranged close to the connection between the main cavity (5) and the side cavity (501).

8. The plasma-enhanced atomic layer deposition apparatus of claim 3, wherein: One side of the auxiliary cavity (4) is sequentially connected with a butterfly valve (3), a gate valve (2) and a molecular pump (1).

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