A semiconductor wafer electroless plating apparatus and method of operation

Abstract

The application relates to the technical field of semiconductor wafer chemical plating, in particular to a semiconductor wafer chemical plating equipment and an operation method, which comprises a semiconductor wafer chemical plating equipment main body, and has the beneficial effect that: through the combination of the plating pool assembly, the plating solution tank assembly and the basket assembly, the plating solution discharge pipe and the plating solution inlet pipe in the plating pool not only play the role of limiting and clamping installation of the wafer installation cabin, but also realize the circulation and uniform flow of the plating solution by injecting the plating solution into the wafer installation cabin from the lower part and then sucking it away from the upper part through the plating solution recovery pipe and the plating solution conveying pipe, so that the uniformity of the plating layer is improved; the wafer installation cabin not only plays the role of separately placing the semiconductor wafer, but also forms independent chemical plating reaction chambers; after the plating solution is injected, the pressure is increased, the non-target plating surface of the wafer is pressed and attached to the wafer installation buckle plate, the uniformity of the plating layer is improved, and the problem that another clamping assembly is designed to clamp and press the target plating surface of the wafer is avoided.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor wafer electroless plating technology, specifically relating to a semiconductor wafer electroless plating equipment and operating method. Background Technology

[0002] Semiconductor wafers are the fundamental material for manufacturing semiconductor devices, typically made from high-purity single-crystal silicon. The semiconductor wafer manufacturing process begins with crystalline silicon raw materials, growing single-crystal silicon ingots using techniques such as the Czochralski method or floating-area method. These ingots are then diced into thin slices, i.e., wafers. Wafer electroless plating equipment is a key piece of equipment in semiconductor manufacturing, used to deposit metal or alloy films on the wafer surface to enhance conductivity, corrosion resistance, and other physical properties. Electroless plating equipment mainly includes a plating bath and a wafer loading system. In addition, after electroless plating, the wafers need to be cleaned and dried. Current technologies face the problem of uneven plating on the back side of the wafer due to insufficient adhesion of the back film, resulting in the target metal being deposited on the back area of ​​the wafer.

[0003] A Chinese patent document with publication number CN115976499A proposes an apparatus and method for single-sided electroless plating of wafers. This method involves placing an annular protective film between the back sides of two wafers; then using a wafer clamping assembly to clamp the two wafers, ensuring the annular protective film is tightly adhered to the back sides of the two wafers. This method solves the aforementioned technical problem by completely shielding the back sides of the wafers through clamping. However, in this method, the wafer clamping assembly must apply pressure to the wafers, which may damage them.

[0004] Therefore, this invention proposes a semiconductor wafer electroless plating equipment and operating method to solve the problem of wafer damage that easily occurs when using wafer clamping components to clamp two wafers in the prior art. By improving the basket and plating tank structure, and using a designed plating solution circulation pipe to inject the plating solution into a separate wafer mounting chamber, the pressure of the plating solution injection is used to fix the wafer in the chamber, forming an independent flow single electroless plating reaction chamber. This not only promotes the flow of plating solution, accelerates the transport of reactants, and improves the uniformity of the plating layer, but also avoids the problem of clamping components pressing on the target plating surface of the wafer. Summary of the Invention

[0005] In view of the shortcomings of the existing technology, the purpose of this invention is to provide a semiconductor wafer electroless plating equipment and operating method to solve the problems mentioned in the background art.

[0006] To achieve the above objectives, the present invention provides the following technical solution: a semiconductor wafer electroless plating apparatus, comprising a main body of the semiconductor wafer electroless plating apparatus, an electroless plating chamber disposed above the main body of the semiconductor wafer electroless plating apparatus, a plating tank assembly disposed inside the electroless plating chamber, the plating tank assembly comprising a plating tank, a plating solution discharge pipe and a plating solution inlet pipe, a plating solution tank assembly disposed on one side of the plating tank assembly, a basket assembly disposed inside the plating tank assembly, the basket assembly comprising an integrated mounting plate and a wafer independent mounting frame, the wafer independent mounting frame comprising a wafer mounting compartment.

[0007] Preferably, the front sidewall of the plating tank is provided with a basket mounting groove. The plating solution discharge pipe is slidably installed above the inner surface of the plating tank, and the plating solution inlet pipe is slidably installed below the inner surface of the plating tank. The plating solution discharge pipe and the plating solution inlet pipe are symmetrically arranged. A bidirectional threaded rod is rotatably installed in the middle of the sidewall of the plating tank. One end of the plating solution inlet pipe and the plating solution discharge pipe are respectively threaded to the outer surface of the bidirectional threaded rod. An upper sealing gasket is evenly distributed on the lower surface of the plating solution discharge pipe. A plating solution discharge nozzle is fixedly installed in the middle of the upper sealing gasket. The plating solution discharge nozzle communicates with the inner wall of the plating solution discharge pipe. A lower sealing gasket is evenly distributed on the upper surface of the plating solution inlet pipe. A plating solution injection nozzle is fixedly installed in the middle of the lower sealing gasket. The plating solution injection nozzle communicates with the inner wall of the plating solution inlet pipe.

[0008] Preferably, a pressure sensor mounting bracket is fixedly installed on the rear side wall of the plating tank. Multiple sets of pressure sensor mounting brackets are provided, and the multiple sets of pressure sensor mounting brackets are vertically and crosswise distributed between the plating solution inlet pipe and the plating solution outlet pipe.

[0009] Preferably, the plating solution tank assembly includes a plating solution circulation tank disposed on one side of the integrated mounting plate. A plating solution recovery pipe and a plating solution delivery pipe are fixedly installed on the outer surface of the plating solution circulation tank near the integrated mounting plate. The plating solution recovery pipe is disposed above the plating solution delivery pipe. The inner wall of the plating solution recovery pipe is fixedly connected to the inner wall of one end of the plating solution discharge pipe through a corrugated pipe. The inner wall of the plating solution delivery pipe is fixedly connected to the inner wall of one end of the plating solution inlet pipe through a corrugated pipe.

[0010] Preferably, a plating solution storage chamber is provided in the middle of the plating solution circulation tank, and a plating solution filtration chamber is provided on one side of the plating solution circulation tank. A filter plate is installed at an angle inside the plating solution filtration chamber. A second pump is fixedly installed above the plating solution filtration chamber. The input pipe end of the second pump is fixedly connected to one end of the plating solution recovery pipe. The output pipe end of the second pump passes through the top partition of the plating solution filtration chamber. A square groove is opened in the side partition of the plating solution filtration chamber near the plating solution filtration chamber. A drain pipe is fixedly installed at the bottom of the other side wall of the plating solution filtration chamber.

[0011] Preferably, a pump is provided on the other side of the interior of the plating solution circulation tank. The output pipe of the pump is fixedly connected to one end of the plating solution delivery pipe. The input pipe of the pump penetrates the partition of the plating solution filtration chamber. A main plating solution injection pipe and a rinsing pipe are fixedly installed on the upper side wall of the plating solution circulation tank.

[0012] Preferably, the inner surface of the integrated mounting plate is fixedly fitted with a locking pad adapted to the basket mounting groove, and the side surface of the locking pad is provided with a sleeve. The wafer independent mounting frame is composed of three sets of wafer mounting compartments fixedly connected by branch pipes. The branch pipes of the wafer independent mounting frame are fixedly installed on one side of the locking pad of the integrated mounting plate by bolts. The inner surface of the plating tank is provided with a square slot adapted to the wafer independent mounting frame. The integrated mounting plate is fixedly connected to the outer surface of the plating tank by bolts.

[0013] Preferably, a plating solution outlet adapted to the plating solution outlet is provided above the outer surface of the wafer mounting compartment, and a plating solution inlet adapted to the plating solution inlet is provided below the outer surface of the wafer mounting compartment. A wafer mounting plate is movably mounted on one side of the inner surface of the independent wafer mounting bracket via threads. A sealing film is provided in the middle of the side surface of the wafer mounting plate, and an inner sealing ring is provided on the outer side of the sealing film. The inner sealing ring is fixedly mounted on the side surface of the wafer mounting plate.

[0014] Preferably, an outer sealing ring is provided on one side of the inner sealing ring, and a sealing groove adapted to the outer sealing ring is provided on the side surface of the inner sealing ring. The outer surface of the outer sealing ring is fixedly connected to the inner surface of the wafer mounting chamber. A plating solution sealing bladder is fixedly installed on the inner surface of the outer sealing ring. A wafer mounting cavity is provided between the plating solution sealing bladder and the sealing film. A movable column is fixedly installed in the middle of the outer surface of the plating solution sealing bladder. A sliding hole adapted to the movable column is provided in the middle of the side wall of the wafer mounting chamber. The outer sealing ring has a plating solution flow chamber located at its upper interior and a plating solution discharge chamber located at its lower interior. The length of the plating solution discharge chamber is three times the length of the plating solution flow chamber. The top of the inner wall of the outer sealing ring has an insertion port that matches the plating solution discharge nozzle, and the bottom of the inner wall of the outer sealing ring has an insertion port that matches the plating solution injection nozzle. The upper inner side wall of the outer sealing ring has a plating solution overflow groove corresponding to the position of the plating solution flow chamber, and the lower inner side of the outer sealing ring has a plating solution overflow groove corresponding to the position of the plating solution discharge chamber.

[0015] This invention also proposes an operating method for a semiconductor wafer electroless plating equipment, comprising the following steps: Step 1, installing wafers: unscrew the wafer mounting plate, attach a sealing film to the non-target plating surface of the wafer, and then place it in the middle area of ​​the inner sealing ring, ensuring that the edge of the wafer is completely wrapped by the inner sealing ring and that the side with the sealing film is in contact with the side surface of the wafer mounting plate. Then, rotate the entire wafer mounting plate in the opposite direction and install it into the rear side of the wafer mounting compartment to complete the wafer installation; Step 2, installing the independent wafer mounting frame: sequentially install the wafer mounting compartment, after installing the wafers, onto the sleeves on the locking pads of the independent wafer mounting frame and secure them with bolts. Insert the basket mounting slot into the plating tank, ensuring the square indicator plate at the rear of the wafer mounting compartment aligns with the square locking mechanism on the side surface of the plating tank. Use bolts to secure the integrated mounting plate to the outside of the plating tank. Finally, rotate the double-threaded rod clockwise to move the plating solution discharge pipe downwards and the plating solution inlet pipe upwards, thus clamping and fixing the wafer mounting compartment. At this point, the plating solution discharge nozzle is inserted into the plating solution outlet, and the plating solution injection nozzle is inserted into the plating solution injection port. Step three: Start the plating solution circulation for the chemical plating reaction. Pump one receives the control signal from the control equipment, extracts the plating solution from the plating solution storage chamber, inputs it through the corrugated pipe to the plating solution discharge pipe, and injects it into the wafer mounting compartment through the lower sealing mounting gasket. After the plating solution enters the wafer mounting chamber, it flows through the plating solution discharge chamber and the plating solution overflow channel into the space between the plating solution sealing container and the wafer. At this point, the plating solution sealing container expands due to the increased pressure from the plating solution, causing the movable column to slide out and trigger the miniature pressure sensor mounted on the pressure sensor mounting bracket. After a period of time, the pressure reaches a predetermined value. At this point, pump two receives a control signal and starts. The plating solution flows through the plating solution flow chamber and the plating solution overflow channel, and is then drawn out by the plating solution discharge nozzle. It is then pumped back to the plating solution filter chamber by pump two. The filter plate filters the plating solution, removing impurities before it re-enters the plating solution storage chamber for plating solution circulation. The plating solution flowing inside the sealed container of the plating solution undergoes a chemical plating reaction with the target plating surface of the wafer. In step four, after the chemical plating reaction has been going on for a period of time, pump one stops working, while pump two continues to work for a short period of time to draw out as much plating solution as possible from inside the wafer mounting chamber. The sealed container of the plating solution deforms under the suction force, squeezing out as much plating solution as possible. After pump two is turned off, the double-threaded rod is rotated counterclockwise. At this time, the plating solution discharge pipe moves upward and the plating solution inlet pipe moves downward. After removing the bolts of the integrated mounting plate, the wafer independent mounting bracket can be taken out. Finally, the wafer independent mounting bracket is disassembled in sequence to open the wafer mounting chamber and the chemically plated wafer can be taken out. Then, the subsequent rinsing, drying and sealing film removal work is carried out.

[0016] Compared with the prior art, the beneficial effects of the present invention are:

[0017] By combining the plating tank assembly, plating solution tank assembly, and basket assembly, the plating solution discharge pipe and plating solution inlet pipe inside the plating tank not only serve to limit and lock the wafer mounting compartment for installation, but also, through the plating solution recovery pipe and plating solution delivery pipe, enable the plating solution to be injected into the wafer mounting compartment from below and then extracted from above, achieving uniform circulation of the plating solution and improving the uniformity of the plating layer. The wafer mounting compartment not only serves to hold semiconductor wafers individually, but also forms independent chemical plating reaction chambers. After the plating solution is injected, the increased pressure forces the non-target plating surface of the wafer to be squeezed and adhered to the wafer mounting plate, thereby improving the uniformity of the plating layer and avoiding the problem of separately designed clamping components clamping and pressing the target plating surface of the wafer. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the overall structure of the present invention;

[0019] Figure 2 This is a top view of the overall structure of the present invention;

[0020] Figure 3 This is a schematic diagram of the overall front structure of the plating tank assembly, plating solution tank assembly, and flower basket assembly of the present invention.

[0021] Figure 4 This is a schematic diagram of the overall rear structure of the plating tank assembly, plating solution tank assembly, and flower basket assembly of the present invention.

[0022] Figure 5 This is a schematic diagram of the flower basket assembly of the present invention before installation;

[0023] Figure 6 This is a schematic diagram of the internal structure of the plating tank assembly of the present invention;

[0024] Figure 7 This is a schematic diagram of the overall structure of the plating solution discharge pipe and plating solution inlet pipe of the present invention.

[0025] Figure 8 This is a schematic diagram of the overall structure of the flower basket assembly of the present invention;

[0026] Figure 9 This is a schematic diagram showing the overall top and bottom view comparison of the wafer mounting compartment of the present invention;

[0027] Figure 10 This is a schematic cross-sectional view of the wafer mounting bay structure of the present invention;

[0028] Figure 11 This is a schematic diagram of the wafer mounting clip plate of the present invention after it has been opened.

[0029] Figure 12 This is a schematic diagram of the other side of the wafer mounting clip plate after it has been opened according to the present invention;

[0030] Figure 13This is a schematic diagram of the wafer mounting bay structure after disassembly according to the present invention;

[0031] Figure 14 This is a schematic diagram of the other side of the wafer mounting compartment after it has been disassembled according to the present invention;

[0032] Figure 15 This is a schematic diagram of the operation method of the present invention.

[0033] In the diagram: 1. Main body of semiconductor wafer electroless plating equipment; 11. Electroless plating chamber; 2. Plating tank assembly; 21. Plating tank; 211. Basket mounting trough; 22. Plating solution discharge pipe; 221. Upper sealing gasket; 222. Plating solution discharge nozzle; 23. Plating solution inlet pipe; 231. Lower sealing gasket; 232. Plating solution injection nozzle; 24. Bidirectional threaded rod; 25. Pressure sensor mounting bracket; 3. Plating solution tank assembly; 31. Plating solution circulation tank; 311. Plating solution main injection pipe; 312. Flushing pipe; 313. Sewage pipe; 314. Plating solution storage chamber; 315. Plating solution filtration chamber; 316. Filter plate; 32. Plating solution recovery. 33. Plating solution delivery pipe; 34. Pump 1; 35. Pump 2; 4. Basket assembly; 41. Integrated mounting plate; 42. Independent wafer mounting rack; 421. Wafer mounting compartment; 4211. Plating solution outlet; 4212. Plating solution inlet; 4213. Wafer mounting buckle plate; 42131. Sealing membrane; 42132. Inner sealing ring; 42133. Wafer mounting cavity; 4214. Outer sealing ring; 4215. Plating solution flow cavity; 42151. Plating solution overflow channel; 4216. Plating solution discharge cavity; 42161. Plating solution overflow channel; 4217. Plating solution sealing container; 4218. Movable column. Detailed Implementation

[0034] To make the objectives, technical solutions, and advantages of the present invention clear and complete, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only some, not all, embodiments of the present invention, and are merely illustrative of the embodiments of the present invention. They are not intended to limit the embodiments of the present invention. All other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0035] Example 1

[0036] Please see Figures 1 to 15This invention provides a technical solution: a semiconductor wafer electroless plating apparatus, comprising a main body 1, a electroless plating chamber 11 disposed above the main body 1, a control device disposed on the top of the main body 1 for controlling the entire electroless plating reaction process, and a reversible transparent glass cover disposed at the front end of the electroless plating chamber 11; a plating tank assembly 2 disposed inside the electroless plating chamber 11, the plating tank assembly 2 comprising a plating tank 21, a plating solution discharge pipe 22, and a plating solution inlet pipe 23, a basket mounting groove 211 provided on the front side wall of the plating tank 21, the plating solution discharge pipe 22 slidably mounted above the inner surface of the plating tank 21, and the plating solution inlet pipe 23 slidably mounted on the plating tank 21. Below the inner surface of the plating tank 21, the plating solution discharge pipe 22 and the plating solution inlet pipe 23 are symmetrically arranged. A bidirectional threaded rod 24 is rotatably installed in the middle of the side wall of the plating tank 21. One end of the plating solution inlet pipe 23 and the plating solution discharge pipe 22 are respectively threaded to the outer surface of the bidirectional threaded rod 24. The lower surface of the plating solution discharge pipe 22 is evenly distributed with upper sealing gaskets 221. A plating solution discharge nozzle 222 is fixedly installed in the middle of the upper sealing gasket 221. The plating solution discharge nozzle 222 is in communication with the inner wall of the plating solution discharge pipe 22. The upper surface of the plating solution inlet pipe 23 is evenly distributed with lower sealing gaskets 231. A plating solution injection nozzle 232 is fixedly installed in the middle of the lower sealing gasket 231. The plating solution injection nozzle 232 is in communication with the inner wall of the plating solution inlet pipe 23. In this embodiment... In this example, the plating tank 21 mainly serves to install and integrate the mounting plate 41 and the wafer independent mounting bracket 42. The plating solution discharge pipe 22 and the plating solution inlet pipe 23 have the same structure, both consisting of three sets of hollow T-shaped pipes connected by a connecting bracket. The end of the middle set of T-shaped pipes is threaded to the outer surface of the bidirectional threaded rod 24 via a connector. The side wall of the plating tank 21 is provided with limiting grooves that are compatible with the plating solution discharge pipe 22 and the plating solution inlet pipe 23. The threads on the outer surface of the bidirectional threaded rod 24 are arranged in opposite directions. By rotating the bidirectional threaded rod 24 clockwise, the plating solution discharge pipe 22 can move downward with the cooperation of the limiting groove, and the plating solution inlet pipe 23 can move upward with the cooperation of the limiting groove, thus realizing the installation of the plating solution discharge pipe 22 and the wafer independent mounting bracket 42. The wafer mounting compartment 421 is clamped and fixed. The upper sealing mounting pad 221 distributed on the lower surface of the plating solution discharge pipe 22 mainly serves to lock the upper surface of the wafer mounting compartment 421 and seal the area around the plating solution discharge nozzle 222 inserted into the plating solution discharge port 4211. Similarly, the lower sealing mounting pad 231 distributed on the upper surface of the plating solution discharge pipe 23 mainly serves to lock the lower surface of the wafer mounting compartment 421 and seal the area around the plating solution injection nozzle 232 inserted into the plating solution injection port 4212. In addition, the plating solution discharge pipe 23 injects the plating solution into the wafer mounting compartment 421 through the lower sealing mounting pad 231, and the upper sealing mounting pad 221 discharges the overflowing plating solution, realizing the circulation of the plating solution and increasing the uniformity of the plating solution flow.

[0037] A pressure sensor mounting bracket 25 is fixedly installed on the rear wall of the plating tank 21. Multiple sets of pressure sensor mounting brackets 25 are arranged vertically and crisscrossingly between the plating solution inlet pipe 23 and the plating solution outlet pipe 22. In this embodiment, the pressure sensor mounting bracket 25 mainly serves to install pressure sensors. The pressure sensors are installed on one side of the upper sealing mounting pad 221 and lower sealing mounting pad 231 of each set. The pressure sensors installed on the pressure sensor mounting bracket 25 can be Honeywell miniature force sensors. A pressure sensor data output module is fixedly installed on the rear surface of the plating tank 21. Through wire connection, the pressure data received by the pressure sensor installed on the pressure sensor mounting bracket 25 can be output to the top control device to control the amount of plating solution circulating through the plating solution outlet pipe 22 and the plating solution inlet pipe 23, ensuring that the plating solution injected into the wafer mounting chamber 421 remains full and improving the metal formation quality of the target plating surface.

[0038] Example 2

[0039] Please see Figures 1 to 15 Based on Embodiment 1, to achieve independent wafer mounting, this embodiment further proposes that the plating tank assembly 2 is internally equipped with a basket assembly 4. The basket assembly 4 includes an integrated mounting plate 41 and an independent wafer mounting frame 42. The independent wafer mounting frame 42 includes a wafer mounting compartment 421. The inner surface of the integrated mounting plate 41 is fixedly equipped with a locking pad adapted to the basket mounting groove 211. The side surface of the locking pad is provided with a sleeve. The independent wafer mounting frame 42 is composed of three sets of wafer mounting compartments 421 fixedly connected by branch pipes. The branch pipes of the independent wafer mounting frame 42 are fixedly installed on one side of the locking pad of the integrated mounting plate 41 by bolts. The inner surface of the plating tank 21 is provided with a square slot adapted to the independent wafer mounting frame 42. The integrated mounting plate 41 is fixedly connected to the outer surface of the plating tank 21 by bolts. A plating solution outlet 4211 adapted to the plating solution outlet 222 is provided on the upper surface of the outer surface of the wafer mounting chamber 421, and a plating solution inlet 4212 adapted to the plating solution inlet 232 is provided on the lower surface of the outer surface of the wafer mounting chamber 421. In this embodiment, the three sets of wafer mounting chambers 421 are connected into one unit by branch pipes to form a set of independent wafer mounting racks 42, which can independently place three wafers. The set of independent wafer mounting racks 42 is mainly installed on the sleeve on the locking pad of the integrated mounting plate 41 by bolts. It should be noted that the wafers are placed before the independent wafer mounting racks 42 are installed, and the arrow on the square indicator plate at the tail of the independent wafer mounting rack 42 should be kept pointing upwards to avoid incorrect engagement of the plating solution outlet 4211 and the plating solution inlet 4212 with the plating solution outlet 222 and the plating solution inlet 232, respectively.

[0040] A wafer mounting bracket 42 has a wafer mounting plate 4213 threadedly mounted on one inner surface of its side. A sealing film 42131 is provided in the middle of the side surface of the wafer mounting bracket 4213, and an inner sealing ring 42132 is provided on the outer side of the sealing film 42131. The inner sealing ring 42132 is fixedly mounted on the side surface of the wafer mounting bracket 4213. An outer sealing ring 4214 is provided on one side of the inner sealing ring 42132, and a sealing groove adapted to the outer sealing ring 4214 is provided on the side surface of the inner sealing ring 42132. The outer surface of the outer sealing ring 4214 is fixedly connected to the inner surface of the wafer mounting compartment 421. A plating solution sealing container 4217 is fixedly mounted on the inner surface of the outer sealing ring 4214. A wafer mounting cavity 421 is provided between the plating solution sealing container 4217 and the sealing film 42131. 33. In this embodiment, it is necessary to unscrew the wafer mounting plate 4213, attach the sealing film 42131 to the non-target plating surface of the wafer, the sealing film 42131 can be a dry film resist, and then place it in the middle area of ​​the inner sealing ring 42132, keeping the edge of the wafer completely wrapped by the inner sealing ring 42132 and the side of the sealing film 42131 adhering to the side surface of the wafer mounting plate 4213. Finally, rotate the wafer mounting plate 4213 in the opposite direction and install it into the rear side of the wafer mounting compartment 421 to complete the wafer installation. After the wafer is installed, it is located inside the wafer mounting cavity 42133 between the plating solution sealing bladder 4217 and the sealing film 42131. The inner sealing ring 42132 and the outer sealing ring 4214 are in a sealed engagement state. At this time, the target plating surface of the wafer is located on one side of the cavity of the plating solution sealing bladder 4217.

[0041] A movable column 4218 is fixedly installed in the middle of the outer surface of the plating solution sealing container 4217. A sliding hole adapted to the movable column 4218 is provided in the middle of the side wall of the wafer mounting compartment 421. In this embodiment, the wafer mounting compartment 421 after the wafer is installed is then installed on the sleeve on the locking pad of the wafer independent mounting bracket 42 and fixed with bolts. Finally, the wafer mounting compartment 421 is inserted into the plating tank 21 through the basket mounting groove 211 to ensure that the square indicator plate at the tail of the wafer mounting compartment 421 is aligned with the square locking on the side surface of the plating tank 21. The integrated mounting plate 41 is fixed to the outside of the plating tank 21 with bolts. Finally, the bidirectional threaded rod 24 is rotated clockwise to move the plating solution discharge pipe 22 downward and the plating solution inlet pipe 23 upward, thereby clamping and fixing the wafer mounting compartment 421. At this time, the plating solution discharge nozzle 222 is inserted into the plating solution discharge outlet 4211 and the plating solution injection nozzle 232 is inserted into the plating solution injection port 4212.

[0042] An external sealing ring 4214 has a plating solution flow chamber 4215 located at its upper interior and a plating solution discharge chamber 4216 located at its lower interior. The length of the plating solution discharge chamber 4216 is three times the length of the plating solution flow chamber 4215. The top of the inner wall of the external sealing ring 4214 has an insertion port adapted to the plating solution discharge nozzle 222, and the bottom of the inner wall of the external sealing ring 4214 has an insertion port adapted to the plating solution injection nozzle 232. A plating solution overflow channel 42151, corresponding to the position of the plating solution flow chamber 4215, is provided on the upper part of the inner side wall of the outer sealing ring 4214. A plating solution overflow channel 42161, corresponding to the position of the plating solution discharge chamber 4216, is provided on the lower inner side of the outer sealing ring 4214. In this embodiment, the plating solution is evenly injected into the wafer mounting chamber 421 through the plating solution discharge pipe 23 and the lower sealing mounting pad 231 and flows into the plating solution discharge chamber 4216 below the outer sealing ring 4214. The plating solution then overflows through the overflow channel 42161 and enters the internal space between the cavity of the plating solution sealing container 4217 and the target plating surface of the wafer. As more and more plating solution enters, the pressure in the cavity of the plating solution sealing container 4217 increases, causing the plating solution sealing container 4217 to be filled and expanded. At this time, the movable column 4218 will be squeezed out by the expansion of the plating solution sealing container 4217, generating pressure on the input end of the miniature pressure sensor installed on the pressure sensor mounting bracket 25. The miniature pressure sensor transmits the pressure data to the control device. When the target pressure value is reached, the plating solution discharge pipe 22 discharges the excess plating solution through the plating solution discharge nozzle 222 into the overflow channel 42151 and the plating solution flow chamber 4215, maintaining the pressure balance inside the wafer mounting chamber 421, allowing the plating solution to start circulating, increasing the uniformity of the plating solution flow, and under the action of the plating solution pressure, the wafer is squeezed to make the non-target plating surface tightly adhere to the wafer mounting plate 4213, ensuring the seal.

[0043] Example 3

[0044] Please see Figures 1 to 15Based on Embodiment 2, to enable the plating solution inlet pipe 23 and plating solution outlet pipe 22 to complete the circulation of the plating solution, this embodiment further proposes that a plating solution tank assembly 3 be provided on one side of the plating tank assembly 2. The plating solution tank assembly 3 includes a plating solution circulation tank 31 provided on one side of the integrated mounting plate 41. A plating solution recovery pipe 32 and a plating solution delivery pipe 33 are fixedly installed on the outer surface of the plating solution circulation tank 31 near the integrated mounting plate 41. The plating solution recovery pipe 32 is located above the plating solution delivery pipe 33. The inner wall of the plating solution recovery pipe 32 is fixedly connected to the inner wall of one end of the plating solution outlet pipe 22 through a corrugated pipe. The inner wall of the plating solution delivery pipe 33 is fixedly connected to the inner wall of one end of the plating solution inlet pipe 23 through a corrugated pipe. A plating solution storage chamber 314 is provided in the middle of the interior of the plating solution circulation tank 31. A plating solution filtration chamber 315 is provided on one side of the interior of the plating solution circulation tank 311. A filter plate 316 is installed obliquely inside the plating solution filtration chamber 315. A second pump 35 is fixedly installed above the plating solution filtration chamber 315. The input pipe end of the second pump 35 is fixedly connected to one end of the plating solution recovery pipe 32. The output pipe end of the second pump 35 passes through the top partition of the plating solution filtration chamber 315. A square groove is opened in the side partition of the plating solution filtration chamber 315 near the plating solution filtration chamber 315. A drain pipe 313 is fixedly installed at the bottom of the other side wall of the plating solution filtration chamber 315. A first pump 34 is installed on the other side of the interior of the plating solution circulation tank 31. 4. The output pipe end is fixedly connected to one end of the plating solution conveying pipe 33. The input pipe end of the pump 34 passes through the partition of the plating solution filter chamber 315. The plating solution main injection pipe 311 and the flushing pipe 312 are fixedly installed on the upper side wall of the plating solution circulation tank 31. The plating solution main injection pipe 311 is connected to the plating solution storage chamber 314, and the flushing pipe 312 is connected to the plating solution filter chamber 315. The plating solution main injection pipe 311, the flushing pipe 312, and the drain pipe 313 are all equipped with control valves.

[0045] In this embodiment, the plating solution is mainly fed into the plating solution storage chamber 314 through the plating solution main injection pipe 311 for storage. The side wall of the plating solution storage chamber 314 can be designed with a sensor feedback system, such as a level sensor to monitor the level of the plating solution inside the plating solution storage chamber 314, or other specific concentration sensors to monitor the concentration of the plating solution. This will not be elaborated in this embodiment. First, the pump 34 receives the control signal from the control device and extracts the plating solution from the plating solution storage chamber 314, inputs it through the bellows into the plating solution discharge pipe 23, and then through the lower sealing gasket 23. 1. The plating solution is injected into the wafer mounting chamber 421. After entering the wafer mounting chamber 421, it will enter the space between the cavity of the plating solution sealing container 4217 and the wafer through the plating solution discharge cavity 4216 and the plating solution overflow channel 42161. At this time, the plating solution sealing container 4217 expands due to the increased pressure of the plating solution entering, causing the movable column 4218 to slide out and trigger the miniature pressure sensor installed on the pressure sensor mounting bracket 25. After a period of time, the pressure reaches the predetermined value. At this time, the second pump 35 receives the control signal and starts. The plating solution will flow through the plating solution flow chamber 4. 215. The plating solution overflows into the channel 42151 and is drawn out by the plating solution discharge nozzle 222. Then, it is pumped back to the plating solution filter chamber 315 by pump two 35. The filter plate 316 filters the plating solution, removing impurities from the returned solution before it re-enters the plating solution storage chamber 314 for plating solution circulation. After the chemical plating reaction has been going on for a period of time, pump one 34 stops working, while pump two 35 continues to work for a short period of time to draw out as much plating solution as possible from inside the wafer mounting compartment 421. The plating solution sealing container 4217 deforms under the suction force to allow the plating solution to be drawn out as much as possible. After being squeezed out, and pump 235 is turned off, the bidirectional threaded rod 24 is rotated counterclockwise. At this time, the plating solution discharge pipe 22 moves upward and the plating solution inlet pipe 23 moves downward. After removing the bolts of the integrated mounting plate 41, the wafer independent mounting bracket 42 can be taken out. Finally, the wafer independent mounting bracket 42 is disassembled in sequence to open the wafer mounting chamber 421 and the electroless plated wafer can be taken out. Then, the subsequent rinsing, drying and removal of the sealing film 42131 are carried out. The rinsing pipe 312 mainly serves to rinse the inside of the plating solution filter chamber 315. The rinsing solution can be discharged through the drain pipe 313.

[0046] Example 4

[0047] Please see Figures 1 to 15 Based on Example 3, this example also proposes an operation method for a semiconductor wafer electroless plating apparatus, including the following steps:

[0048] Step 1: Install the wafer. Unscrew the wafer mounting plate 4213, attach the sealing film 42131 to the non-target plated side of the wafer, and then place it in the middle area of ​​the inner sealing ring 42132. Keep the edge of the wafer completely wrapped by the inner sealing ring 42132 and ensure that the side with the sealing film 42131 is in contact with the side surface of the wafer mounting plate 4213. Then, rotate the wafer mounting plate 4213 in the opposite direction and install it into the rear side of the wafer mounting compartment 421 to complete the wafer installation.

[0049] Step 2: Install the wafer independent mounting bracket 42. After mounting the wafer, install the wafer mounting compartment 421 on the sleeve on the snap-fit ​​pad of the wafer independent mounting bracket 42 and fix it with bolts. Insert the wafer mounting compartment 421 into the plating tank 21 through the basket mounting slot 211, ensuring that the square indicator plate at the tail of the wafer mounting compartment 421 is aligned with the square snap-fit ​​on the side surface of the plating tank 21. Fix the integrated mounting plate 41 to the outside of the plating tank 21 with bolts. Finally, rotate the bidirectional threaded rod 24 clockwise to move the plating solution discharge pipe 22 downward and the plating solution inlet pipe 23 upward, thereby clamping and fixing the wafer mounting compartment 421. At this time, the plating solution discharge nozzle 222 is inserted into the plating solution discharge outlet 4211 and the plating solution injection nozzle 232 is inserted into the plating solution injection port 4212.

[0050] Step 3: Start the plating solution circulation for the chemical plating reaction. Pump 34 receives the control signal from the control equipment and extracts the plating solution from the plating solution storage chamber 314, inputting it through the bellows into the plating solution discharge pipe 23, and then injecting it into the wafer mounting chamber 421 through the lower sealing mounting gasket 231. After entering the wafer mounting chamber 421, the plating solution will enter the space between the cavity of the plating solution sealing container 4217 and the wafer through the plating solution discharge cavity 4216 and the plating solution overflow channel 42161. At this time, the plating solution sealing container 4217 expands due to the increased pressure of the plating solution entering, causing the movable column 4218 to slide out and trigger the pressure. The miniature pressure sensor installed on the force sensor mounting bracket 25 will reach a predetermined pressure after a period of time. At this time, the second pump 35 will start upon receiving a control signal. The plating solution will be drawn out by the plating solution discharge nozzle 222 through the plating solution flow chamber 4215 and the plating solution overflow channel 42151. Then, it will be drawn back to the plating solution filter chamber 315 by the second pump 35. The filter plate 316 will filter the plating solution, so that the impurities in the returned plating solution will be filtered out and it will re-enter the plating solution storage chamber 314 for plating solution circulation. The plating solution flowing in the cavity of the plating solution sealed container 4217 will undergo a chemical plating reaction with the target plating surface of the wafer.

[0051] Step four: After the electroless plating reaction has been going on for a period of time, pump one 34 stops working, while pump two 35 continues to work for a short period of time to draw out the plating solution from the wafer mounting chamber 421 as much as possible. The plating solution sealing container 4217 deforms under the suction force, squeezing out the plating solution as much as possible. After pump two 35 is turned off, the bidirectional threaded rod 24 is rotated counterclockwise. At this time, the plating solution discharge pipe 22 moves upward and the plating solution inlet pipe 23 moves downward. After removing the bolts of the integrated mounting plate 41, the wafer independent mounting bracket 42 can be taken out. Finally, the wafer independent mounting bracket 42 is disassembled in sequence to open the wafer mounting chamber 421 and the electroless plated wafer can be taken out. Then, the subsequent rinsing, drying and removal of the sealing film 42131 are carried out.

[0052] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A semiconductor wafer electroless plating apparatus comprising a semiconductor wafer electroless plating apparatus main body (1), a chemical plating chamber (11) being provided above the semiconductor wafer electroless plating apparatus main body (1), characterized in that: The inside of the electroless plating chamber (11) is provided with a plating bath assembly (2), the plating bath assembly (2) comprises a plating bath (21), a plating solution discharge pipe (22) and a plating solution injection pipe (23), one side of the plating bath assembly (2) is provided with a plating solution tank assembly (3), the inside of the plating bath assembly (2) is provided with a flower basket assembly (4), the flower basket assembly (4) comprises an integrated installation plugboard (41) and a wafer independent mounting rack (42), the wafer independent mounting rack (42) comprises a wafer mounting cabin (421), the inside surface of one side of the wafer independent mounting rack (42) is movably provided with a wafer mounting buckle plate (4213) through screw threads, the middle part of the side surface of the wafer mounting buckle plate (4213) is provided with a sealing film (42131), the outside of the sealing film (42131) is provided with an inner buckle sealing ring (42132), the inner buckle sealing ring (42132) is fixedly installed on the side surface of the wafer mounting buckle plate (4213), one side of the inner buckle sealing ring (42132) is provided with an outer buckle sealing ring (4214), the side surface of the inner buckle sealing ring (42132) is provided with a sealing fitting groove matched with the outer buckle sealing ring (4214), the outside surface of the outer buckle sealing ring (4214) is fixedly connected with the inside surface of the wafer mounting cabin (421), the inside surface of the outer buckle sealing ring (4214) is fixedly installed with a plating solution sealing containing capsule (4217), a wafer mounting cavity (42133) is arranged between the plating solution sealing containing capsule (4217) and the sealing film (42131), the middle part of the outside surface of the plating solution sealing containing capsule (4217) is fixedly installed with a movable column (4218), the middle part of the side wall of the wafer mounting cabin (421) is provided with a sliding hole matched with the movable column (4218), the inside upper part of the outer buckle sealing ring (4214) is provided with a plating solution flowing cavity (4215), the inside lower part of the outer buckle sealing ring (4214) is provided with a plating solution discharge cavity (4216), the length of the plating solution discharge cavity (4216) is three times of the length of the plating solution flowing cavity (4215), the top of the inner wall of the outer buckle sealing ring (4214) is provided with a socket matched with a plating solution discharge nozzle (222), the bottom of the inner wall of the outer buckle sealing ring (4214) is provided with a socket matched with a plating solution injection nozzle (232), the inside wall of the outer buckle sealing ring (4214) is provided with a plating solution overflow through slot (42151) corresponding to the position of the plating solution flowing cavity (4215) in the upper part, the lower part of the inside wall of the outer buckle sealing ring (4214) is provided with a plating solution overflow through slot (42161) corresponding to the position of the plating solution discharge cavity (4216).

2. The semiconductor wafer electroless plating apparatus according to claim 1, wherein: The front side wall of the plating tank (21) is provided with a flower basket mounting groove (211), the plating solution discharge pipe (22) is slidingly installed above the inner side surface of the plating tank (21), the plating solution inlet pipe (23) is slidingly installed below the inner side surface of the plating tank (21), the plating solution discharge pipe (22) and the plating solution inlet pipe (23) are symmetrically arranged, a two-way threaded rod (24) is rotatably installed in the middle of the side wall of the plating tank (21), one end of the plating solution inlet pipe (23) and the plating solution discharge pipe (22) are respectively threadedly connected with the outer surface of the two-way threaded rod (24), the lower surface of the plating solution discharge pipe (22) is uniformly provided with an upper sealing mounting pad (221), the middle of the upper sealing mounting pad (221) is fixedly installed with a plating solution discharge nozzle (222), the plating solution discharge nozzle (222) penetrates the inner wall of the plating solution discharge pipe (22), the upper surface of the plating solution inlet pipe (23) is uniformly provided with a lower sealing mounting pad (231), the middle of the lower sealing mounting pad (231) is fixedly installed with a plating solution injection nozzle (232), the plating solution injection nozzle (232) penetrates the inner wall of the plating solution inlet pipe (23).

3. The semiconductor wafer electroless plating apparatus according to claim 2, wherein: The rear side wall of the plating tank (21) is fixedly installed with a pressure sensor mounting rack (25), the pressure sensor mounting rack (25) is provided with a plurality of groups, and the plurality of groups of pressure sensor mounting racks (25) are vertically and crossly distributed between the plating solution inlet pipe (23) and the plating solution discharge pipe (22).

4. The semiconductor wafer electroless plating apparatus according to claim 1, wherein: The plating solution tank assembly (3) comprises a plating solution circulating tank (31) arranged on one side of the integrated installation plugboard (41), a plating solution recovery pipe (32) and a plating solution conveying pipe (33) are fixedly installed on the outer surface of the side of the plating solution circulating tank (31) close to the integrated installation plugboard (41), the plating solution recovery pipe (32) is arranged above the plating solution conveying pipe (33), the inner side wall of the plating solution recovery pipe (32) is fixedly connected with the inner wall of one end of the plating solution discharge pipe (22) through a corrugated pipe, and the inner side wall of the plating solution conveying pipe (33) is fixedly connected with the inner wall of one end of the plating solution inlet pipe (23) through a corrugated pipe.

5. The apparatus according to claim 4, wherein the apparatus further comprises a chemical plating device for chemical plating of the semiconductor wafer. A plating solution storage chamber (314) is arranged in the middle of the inside of the plating solution circulating tank (31), a plating solution filtering chamber (315) is arranged on one side of the inside of the plating solution circulating tank (31), a filtering plate (316) is obliquely installed in the inside of the plating solution filtering chamber (315), a pump two (35) is fixedly installed above the plating solution filtering chamber (315), the input pipe end of the pump two (35) is fixedly connected with one end of the plating solution recovery pipe (32), the output pipe end of the pump two (35) penetrates the top partition plate of the plating solution filtering chamber (315), a square groove is arranged in the side partition plate of the plating solution filtering chamber (315) close to the plating solution filtering chamber (315), and a blowdown pipe (313) is fixedly installed on the other side wall bottom of the plating solution filtering chamber (315).

6. The apparatus according to claim 4, wherein: The other side of the inside of the plating solution circulating tank (31) is provided with a pump I (34), the output pipe end of the pump I (34) is fixedly connected with one end of the plating solution delivery pipe (33), the input pipe end of the pump I (34) penetrates the partition plate of the plating solution filtering chamber (315), and the sidewall of the plating solution circulating tank (31) is fixedly provided with a plating solution total injection pipe (311) and a flushing pipe (312) respectively.

7. The apparatus according to claim 1, wherein the apparatus is characterized by: The inner side surface of the integrated mounting plugboard (41) is fixedly provided with a clamping pad matched with the flower basket mounting groove (211), the side surface of the clamping pad is provided with a pipe sleeve, the wafer independent mounting frame (42) is composed of three groups of wafer mounting cabins (421) fixedly connected through branch pipes, the branch pipes of the wafer independent mounting frame (42) are fixedly installed on the clamping pad side of the integrated mounting plugboard (41) through bolts, and the inner side surface of the plating bath (21) is provided with a square clamping groove matched with the wafer independent mounting frame (42).

8. The apparatus according to claim 1, wherein: The outer surface of the wafer mounting cabin (421) is provided with a plating solution discharge port (4211) matched with the plating solution discharge nozzle (222) above, and the outer surface of the wafer mounting cabin (421) is provided with a plating solution injection port (4212) matched with the plating solution injection nozzle (232) below.

9. A method for operating a semiconductor wafer electroless plating apparatus, suitable for use with a semiconductor wafer electroless plating apparatus as claimed in any one of claims 1 to 8, the method comprising: The method comprises the following steps: Step one, install the wafer, unscrew the wafer mounting buckle plate (4213), paste the sealing film (42131) on the non-target plating surface of the wafer, then place it in the middle area of the inner buckle sealing ring (42132), keep the edge of the wafer wrapped completely by the inner buckle sealing ring (42132) and the side surface of the sealing film (42131) pasted on the wafer mounting buckle plate (4213), then reversely rotate the wafer mounting buckle plate (4213) as a whole and install it into the rear side of the wafer mounting cabin (421) to complete the installation of the wafer; Step two, install the wafer independent mounting frame (42), install the wafer mounting cabin (421) after installing the wafer on the pipe sleeve on the clamping pad of the wafer independent mounting frame (42) in sequence and fix it with bolts, insert the wafer mounting cabin (421) into the inside of the plating bath (21) through the flower basket mounting groove (211), ensure that the tail square indicating plate of the wafer mounting cabin (421) is aligned with the square clamping of the side surface of the plating bath (21), fix the integrated mounting plugboard (41) on the outside of the plating bath (21) with bolts, finally rotate the bidirectional screw rod (24) clockwise to realize the downward movement of the plating solution discharge pipe (22) and the upward movement of the plating solution discharge pipe (23), realize the clamping and fixing of the wafer mounting cabin (421), at this time, the plating solution discharge nozzle (222) is inserted into the plating solution discharge port (4211) and the plating solution injection nozzle (232) is inserted into the inside of the plating solution injection port (4212). Step three, start the plating solution circulation for electroless plating reaction, pump one (34) receives the control signal of the control device, the plating solution in the plating solution storage chamber (314) is extracted through the corrugated pipe and is input to the plating solution discharge pipe (23), and is injected into the wafer mounting cabin (421) through the lower sealing mounting pad (231). After the plating solution enters the wafer mounting cabin (421), it will enter the space between the cavity of the plating solution sealing containing capsule (4217) and the wafer through the plating solution discharge cavity (4216) and the plating solution overflow channel (42161). At this time, the plating solution sealing containing capsule (4217) is inflated due to the increase of the pressure of the entering plating solution, which causes the movable column (4218) to slide out and trigger the micro pressure sensor installed on the pressure sensor mounting rack (25). After a period of time, the pressure reaches the predetermined value, at which time pump two (35) starts to work, the plating solution is extracted through the plating solution flow cavity (4215), the plating solution overflow channel (42151) and the plating solution discharge nozzle (222), and then is extracted back to the plating solution filtration chamber (315) through pump two (35). The filter plate (316) plays a role in filtering the plating solution, so that the impurities in the backflow plating solution are filtered out and then enter the plating solution storage chamber (314) again for plating solution circulation. The plating solution in the cavity of the plating solution sealing containing capsule (4217) flows and reacts with the target plating surface of the wafer. Step four, after a period of time of electroless plating reaction, pump one (34) does not work, pump two (35) continues to work for a short time to extract the plating solution in the wafer mounting cabin (421) as much as possible. The plating solution sealing containing capsule (4217) is deformed under the action of suction to squeeze out the plating solution as much as possible. After pump two (35) is turned off, rotate the bidirectional threaded rod (24) counterclockwise, at this time the plating solution discharge pipe (22) moves up, the plating solution discharge pipe (23) moves down, the bolts of the integrated mounting plug-in board (41) are disassembled, the wafer independent mounting rack (42) is taken out, and finally the wafer independent mounting rack (42) is disassembled to open the wafer mounting cabin (421) to take out the wafer after electroless plating, and then the subsequent rinsing, drying and removing the sealing film (42131) are performed.

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