Microwave impedance matcher and microwave remote plasma source system
Through the three-pin assembly and the stacked pin accommodation structure, the position of the pin body in the microwave waveguide is precisely controlled, which solves the problem of difficult-to-control insertion depth of the pin body, improves processing accuracy, reduces microwave leakage, and enhances system stability.
Patent Information
- Application Number
- CN202511079056.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-02
- Publication Date
- 2025-09-12
AI Technical Summary
In existing microwave impedance matchers, the insertion depth of the pin body is difficult to accurately control, and it is easy for the pin to contact the bottom wall of the microwave waveguide, causing cavity deformation or short circuit, and there is also the problem of microwave leakage.
A three-pin assembly is adopted, including a driving mechanism, a screw, a nut structure and a pin structure. Through the stacked pin accommodating structure and the limiting layer, the moving depth of the pin body is precisely controlled to avoid contact with the bottom wall of the microwave waveguide, and microwave leakage is reduced through the insulating protective layer.
The precise position control of the pin body is achieved, the processing accuracy is improved, microwave leakage and cavity damage are avoided, and the stability of the system is enhanced.
Smart Images
Figure CN120637835A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of microwave technology, in particular to a microwave impedance matcher and a microwave remote plasma source system. Background Art
[0002] Microwave impedance matchers are key components in microwave transmission systems, used to eliminate signal reflections and improve energy transmission efficiency. Three-pin components are widely used in waveguide matchers due to their high adjustment flexibility.
[0003] The pin body is typically screwed into the microwave waveguide via a thread, with the insertion depth controlled by the thread travel. However, thread play can cause axial movement. During overshoot, the tip of the pin body can strike the bottom sidewall of the microwave waveguide, causing cavity deformation or even a short circuit.
[0004] Some solutions use external limit baffles, but the limit baffles are installed separately from the pin body, which is prone to offset failure in a vibration environment. Summary of the Invention
[0005] The present invention provides a microwave impedance matcher and a microwave remote plasma source system, which can accurately limit the movement depth of the pin body to prevent it from contacting the bottom wall of the microwave waveguide. At the same time, it significantly improves the processing accuracy of the pin channel and can also reduce microwave leakage.
[0006] According to one aspect of the present invention, a microwave impedance matching device is provided, the microwave impedance matching device comprising:
[0007] microwave waveguides;
[0008] A three-pin assembly is located on one side of the microwave waveguide; wherein the three-pin assembly includes a pin receiving structure and three pin units;
[0009] The pin unit includes a driving mechanism, a screw, a nut structure, and a pin structure; the nut structure is fixed to the top of the pin structure; the screw and the nut structure are threadedly engaged; the driving mechanism is used to drive the screw to rotate, so that the nut structure drives the pin structure to move along the axial direction of the pin structure within the microwave waveguide;
[0010] The pin accommodating structure comprises a first accommodating layer, a limiting layer, and a second accommodating layer stacked in sequence along the axial direction of the pin structure; the first accommodating layer is located between the limiting layer and the microwave waveguide; the pin accommodating structure is provided with three pin passages penetrating the first accommodating layer, the limiting layer, and the second accommodating layer;
[0011] The portion of the pin channel in the first accommodating layer constitutes a first channel, the portion in the limiting layer constitutes a second channel, and the portion in the second accommodating layer constitutes a third channel;
[0012] The pin structure includes a pin body and a limiting portion; the limiting portion is located at one end of the pin body close to the nut structure and is integrally connected to the pin body; the radial dimension of the limiting portion is greater than the radial dimension of the second channel; the limiting portion cooperates with the limiting layer to constitute an axial limitation on the movement of the pin structure toward the interior of the microwave waveguide.
[0013] Optionally, the pin accommodating structure further includes an insulating protective layer;
[0014] The insulating protective layer covers the inner wall surface of the third channel.
[0015] Optionally, the thickness of the insulating protective layer ranges from 0.5 mm to 3 mm.
[0016] Optionally, the driving mechanism includes a control panel and a driving motor;
[0017] The driving motor is located on a side of the second accommodating layer away from the limiting layer;
[0018] The control board is located on a side of the driving motor away from the second containing layer;
[0019] The control board is electrically connected to the drive motor, and the control board is used to control the working state of the drive motor.
[0020] Optionally, the thickness of the limiting layer is smaller than the thickness of the first accommodating layer;
[0021] The thickness of the first receiving layer is smaller than the thickness of the second receiving layer.
[0022] Optionally, the distance between the centers of vertical projections of two adjacent pin bodies on the microwave waveguide is one quarter of the wavelength of the waveguide.
[0023] Optionally, the pin accommodating structure further comprises a polytetrafluoroethylene layer;
[0024] The first accommodating layer is provided with a groove surrounding the first channel, and the polytetrafluoroethylene layer is filled in the groove.
[0025] Optionally, the material of the pin structure includes copper or aluminum;
[0026] The material of the insulating protective layer includes polytetrafluoroethylene;
[0027] The material of the first accommodating layer, the material of the limiting layer and the material of the second accommodating layer are all metals.
[0028] According to another aspect of the present invention, a microwave remote plasma source system is provided, characterized in that it includes a microwave power supply, a plasma generator and the microwave impedance matching device provided by any embodiment of the present invention.
[0029] Optionally, the microwave remote plasma source system provided in this embodiment further includes a detection control module;
[0030] The detection control module is used to control the depth of each pin body penetrating into the microwave waveguide according to the reflection coefficient in the microwave waveguide.
[0031] An embodiment of the present invention provides a microwave impedance matcher. By setting a driving mechanism to control the angle of rotation of the screw, the position of the pin body within the microwave waveguide can be precisely controlled, thereby accurately controlling the impedance of the microwave impedance matcher. By setting a pin structure including an integrally connected pin body and a limiting portion, and providing a limiting layer to clamp the limiting portion to prevent the pin body from disengaging from the screw, the pin body can also be prevented from colliding with the bottom wall of the microwave waveguide. The pin accommodating structure is provided to include a first accommodating layer, a limiting layer, and a second accommodating layer arranged in a stacked manner. A first channel can be formed in the first accommodating layer, a second channel can be formed in the limiting layer, and a third channel can be formed in the second accommodating layer, thereby completing the production of the pin channel and avoiding the problem of forming a deep pin channel in a single film layer, which results in the pin channel's upper and lower dimensions being unable to be precisely controlled. In summary, the microwave impedance matcher provided by the embodiment of the present invention can accurately limit the moving depth of the pin body, prevent it from contacting the bottom wall of the microwave waveguide, significantly improve the processing accuracy of the pin channel, and reduce microwave leakage.
[0032] It should be understood that the content described in this section is not intended to identify the key or important features of the embodiments of the present invention, nor is it intended to limit the scope of the present invention. Other features of the present invention will become readily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS
[0033] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0034] Figure 1 2 is a schematic structural diagram of a microwave impedance matching device provided in an embodiment of the present invention;
[0035] Figure 2 is a structural schematic diagram of another microwave impedance matching device provided according to an embodiment of the present invention;
[0036] Figure 32 is a schematic structural diagram of a microwave remote plasma source system provided according to an embodiment of the present invention;
[0037] Figure 4 3 is a schematic structural diagram of another microwave remote plasma source system provided according to an embodiment of the present invention. DETAILED DESCRIPTION
[0038] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.
[0039] It should be noted that the terms "first", "second", etc. in the description and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the numbers used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.
[0040] Figure 1 is a schematic structural diagram of a microwave impedance matching device provided according to an embodiment of the present invention, with reference to Figure 1The microwave impedance matcher provided in this embodiment includes: a three-pin assembly 100 and a microwave waveguide 200; the three-pin assembly 100 is located on one side of the microwave waveguide 200; wherein the three-pin assembly 100 includes a pin accommodating structure and three pin units; the pin unit includes a driving mechanism 110, a screw rod 120, a nut structure 130 and a pin structure 140; the nut structure 130 is fixed to the top end of the pin structure 140; the screw rod 120 and the nut structure 130 are threadedly engaged; the driving mechanism 110 is used to drive the screw rod 120 to rotate, so that the nut structure 130 drives the pin structure 140 to move along the axial direction Y of the pin structure 140 in the microwave waveguide 200; the pin accommodating structure includes a first accommodating layer 150, a limiting layer 160 and a second accommodating layer 170 stacked in sequence along the axial direction Y of the pin structure 140; A accommodating layer 150 is located between the limiting layer 160 and the microwave waveguide 200; the pin accommodating structure has three pin channels that penetrate the first accommodating layer 150, the limiting layer 160, and the second accommodating layer 170; the portion of the pin channel within the first accommodating layer 150 constitutes a first channel, the portion within the limiting layer 160 constitutes a second channel, and the portion within the second accommodating layer 170 constitutes a third channel 171; the pin structure 140 includes a pin body 141 and a limiting portion 142; the limiting portion 142 is located at one end of the pin body 141 near the nut structure 130 and is integrally connected to the pin body 141; the radial X dimension of the limiting portion 142 is greater than the radial X dimension of the second channel; the limiting portion 142 cooperates with the limiting layer 160 to constitute an axial Y limit for the movement of the pin structure 140 into the microwave waveguide 200.
[0041] Specifically, the three pin bodies 141 can change the impedance within the microwave waveguide 200. The main principle is that different insertion depths and positions of the pin bodies 141 can be equivalent to different reactances. When the pin body 141 is inserted into the microwave waveguide 200 at a shallow depth, the electric field concentrated near the pin body 141 is strong and the magnetic field is weak. At this time, the pin body 141 acts similarly to a capacitor diaphragm and can be equivalent to a capacitor. As the insertion depth of the pin body 141 increases, the magnetic field energy gradually increases. At a certain level, the magnetic field energy and the electric field energy reach equilibrium, and the pin body 141 acts like the series resonance of an inductor and a capacitor. As the insertion depth of the pin body 141 continues to increase, the magnetic field energy becomes dominant, and the pin body 141 acts like an inductor.
[0042] Microwave waveguide 200 can be a rectangular metal waveguide used to transmit microwave signals. The surface of microwave waveguide 200 near the three-pin assembly 100 includes three through-holes, through which pin bodies 141 can pass and extend into the interior of microwave waveguide 200. The dimensions of the through-holes match those of pin bodies 141, meaning they are precisely sized to accommodate the passage of pin bodies 141.
[0043] The drive mechanism 110 drives the screw 120 to rotate, and the nut structure 130 moves along the axial direction Y of the screw 120, driving the pin structure 140 to move up and down in the microwave waveguide 200. The number of turns and angle of rotation of the screw 120 can control the depth of the pin body 141 in the microwave waveguide 200. It can be seen that this embodiment can precisely control the position of the pin body 141 in the microwave waveguide 200 by controlling the rotation angle of the screw 120, and can linearly and precisely control the impedance of the microwave impedance matcher.
[0044] The radial X-dimension of the pin body 141 can be slightly smaller than or equal to the radial X-dimension of the first channel. The radial X-dimension of the pin body 141 can also be slightly smaller than or equal to the radial X-dimension of the second channel. The radial X-dimensions of the first channel and the second channel can be equal. During the vertical movement of the pin structure 140, the outer wall of the pin body 141 can contact the walls of the first and second channels, thereby reducing the problem of excessive microwave leakage caused by excessive spacing between the pin body 141 and the walls of the first and second channels. During the vertical movement of the pin structure 140, the outer periphery of the stopper 142 can contact the third channel 171.
[0045] During the vertical movement of the pin structure 140, the limiting portion 142 in the pin structure 140 is unable to penetrate the second channel because its radial X dimension is greater than the radial X dimension of the second channel. When the limiting portion 142 contacts the surface of the limiting layer 160 away from the first containment layer 150, the pin body 141 reaches its maximum depth of penetration into the microwave waveguide 200, preventing further penetration. The provision of the limiting layer 160 and limiting portion 142 in this embodiment controls the maximum penetration depth of the pin body 141 into the microwave waveguide 200, preventing the pin structure 140 from striking the bottom of the microwave waveguide 200 during vertical movement.
[0046] The limiting layer 160 in this embodiment is located between the first accommodating layer 150 and the second accommodating layer 170 , rather than being suspended, thereby preventing the limiting portion 142 from hitting the limiting layer 160 and causing inaccurate limiting.
[0047] In this embodiment, the pin accommodating structure is formed by a stacked first accommodating layer 150, a limiting layer 160, and a second accommodating layer 170, which can facilitate the rapid disassembly and assembly of the pin accommodating structure, thereby facilitating the replacement of the pin unit. In addition, the pin accommodating structure includes a stacked first accommodating layer 150, a limiting layer 160, and a second accommodating layer 170, which can facilitate the control of the manufacturing accuracy of the pin channel. For example, a first channel can be formed in the first accommodating layer 150, a second channel can be formed in the limiting layer 160, and a third channel can be formed in the second accommodating layer 170, thereby completing the production of the pin channel and avoiding the problem of forming a deep pin channel in a single film layer, which results in the inability to accurately control the upper and lower dimensions of the pin channel. The thickness of the limiting layer 160 can be less than the thickness of the first accommodating layer 150, and the thickness of the first accommodating layer 150 can be less than the thickness of the second accommodating layer 170.
[0048] This embodiment provides a microwave impedance matcher. By setting a drive mechanism to control the angle of rotation of the screw, the position of the pin body within the microwave waveguide can be precisely controlled, thereby accurately controlling the impedance of the microwave impedance matcher. By setting a pin structure including an integrally connected pin body and a limiting portion, and providing a limiting layer to clamp the limiting portion to prevent the pin body from disengaging from the screw, it can also prevent the pin body from colliding with the bottom wall of the microwave waveguide. The pin accommodating structure is provided to include a first accommodating layer, a limiting layer, and a second accommodating layer arranged in layers. A first channel can be formed in the first accommodating layer, a second channel can be formed in the limiting layer, and a third channel can be formed in the second accommodating layer, thereby completing the production of the pin channel. This layered manufacturing method overcomes the problem of difficulty in accurately controlling the upper and lower dimensions of the channel in single-layer deep groove processing. In summary, the microwave impedance matcher provided by this embodiment can accurately limit the movement depth of the pin body, prevent it from contacting the bottom wall of the microwave waveguide, significantly improve the processing accuracy of the pin channel, and reduce microwave leakage.
[0049] Optional, Figure 2 is a schematic structural diagram of another microwave impedance matching device provided according to an embodiment of the present invention, with reference to Figure 2 The pin accommodating structure further includes an insulating protective layer 180 ; the insulating protective layer 180 covers the inner wall surface of the third channel 171 .
[0050] Specifically, insulating protective layer 180 can be made of polytetrafluoroethylene. Insulating protective layer 180 adheres to the inner wall of third channel 171 to prevent air discharge, increase isolation, and prevent sparks. During the upward and downward movement of pin structure 140, stopper 142 in pin structure 140 contacts insulating protective layer 180.
[0051] Optional, continue to refer to Figure 2The thickness of the insulating protective layer 180 ranges from 0.5 mm to 3 mm. This configuration can better prevent the insulating protective layer 180 from generating sparks in the third channel 171. For example, the thickness of the insulating protective layer 180 can be 1 mm, 1.5 mm, 2.5 mm, or 3 mm.
[0052] Optional, continue to refer to Figure 2 The driving mechanism 110 includes a control board 111 and a driving motor 112; the driving motor 112 is located on the side of the second accommodating layer 170 away from the limiting layer 160; the control board 111 is located on the side of the driving motor 112 away from the second accommodating layer 170; the control board 111 is electrically connected to the driving motor 112, and the control board 111 is used to control the working state of the driving motor 112.
[0053] Specifically, the control board 111 includes a PCB board. The working state of the drive motor 112 includes on or off. The control board 111 can send a drive signal to the drive motor 112 to control the drive motor 112 to start working, and send a shut-down signal to the drive motor 112 to control the drive motor 112 to shut down.
[0054] When the driving motor 112 is in the on working state, the driving motor 112 can drive the screw rod 120 to rotate and drive the pin body 141 to move up and down.
[0055] Optional, continue to refer to Figure 1 and Figure 2 The radial X dimension of the first channel is equal to the radial X dimension of the second channel. This arrangement can avoid the gap between the pin body 141 and the first channel and the second channel, which may cause the microwave in the microwave waveguide 200 to leak easily.
[0056] Optional, continue to refer to Figure 1 or Figure 2 The cross-sectional shape of the microwave waveguide 200 includes a hollow rectangle or a hollow circle.
[0057] Specifically, when the cross-sectional shape of the microwave waveguide 200 is a hollow rectangle, it is easy to disturb the electric field through the pin body 141 to achieve precise matching. When the cross-sectional shape of the microwave waveguide 200 is a hollow circle, the current distribution is more uniform and the attenuation constant is lower.
[0058] Optional, continue to refer to Figure 2 The distance d1 between the centers of the vertical projections of two adjacent pin bodies 141 on the microwave waveguide 200 is one quarter of the waveguide wavelength. This arrangement can further accurately control the impedance of the microwave impedance matcher.
[0059] Optional, continue to refer to Figure 1 or Figure 2The pin accommodating structure further includes a polytetrafluoroethylene layer 310; the first accommodating layer is provided with a groove surrounding the first channel, and the polytetrafluoroethylene layer 310 is filled in the groove.
[0060] Specifically, the polytetrafluoroethylene layer 310 may contact a portion of the outer wall of the pin body 141. The polytetrafluoroethylene layer 310 is used to maintain a quarter-wavelength short-circuit. The length of the polytetrafluoroethylene layer 310 may be equal to one-quarter of the wavelength of the microwaves within the microwave waveguide 200. When the thickness of the first accommodation layer 150 is less than one-quarter of the wavelength within the microwave waveguide 200, the polytetrafluoroethylene layer 310 may be bent and distributed.
[0061] Optionally, the material of the pin structure includes copper or aluminum; the material of the insulating protective layer includes polytetrafluoroethylene; the material of the first accommodating layer, the material of the limiting layer and the material of the second accommodating layer are all metals.
[0062] Figure 3 is a schematic structural diagram of a microwave remote plasma source system provided according to an embodiment of the present invention, with reference to Figure 3 The microwave remote plasma source system provided in this embodiment includes a microwave power supply 20, a plasma generator 30 and a microwave impedance matching device 10 provided in any embodiment of the present invention.
[0063] Specifically, the microwave power supply 20 is used to transmit microwave energy to the plasma generator through the microwave impedance matcher 10. After receiving the microwave energy, the plasma generator 30 can ionize the process gas in the plasma generator 30 into plasma. The microwave impedance matcher 10 is used to achieve impedance matching between the microwave power supply 20 and the plasma generator 30.
[0064] The microwave remote plasma source system provided in this embodiment includes the microwave impedance matcher 10 provided in any embodiment of the present invention. Therefore, the microwave remote plasma source system provided in this embodiment has the beneficial effects of the microwave impedance matcher 10 provided in any embodiment of the present invention, which will not be repeated here.
[0065] Optional, Figure 4 This is a schematic diagram of the structure of another microwave remote plasma source system provided according to an embodiment of the present invention, with reference to Figure 4 The microwave remote plasma source system provided in this embodiment further includes a detection control module 40; the detection control module 40 is used to control the depth of each pin body penetrating into the microwave waveguide according to the reflection coefficient in the microwave waveguide.
[0066] It should be understood that the various forms of the processes shown above can be used to reorder, add, or delete steps. For example, the steps described in the present invention can be performed in parallel, sequentially, or in a different order, as long as the desired results of the technical solution of the present invention can be achieved. This is not limited herein.
[0067] The above specific embodiments do not limit the scope of protection of the present invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions may be made based on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention are intended to be included within the scope of protection of the present invention.
Claims
1. A microwave impedance matching device, characterized in that: include: microwave waveguides; A three-pin assembly is located on one side of the microwave waveguide; wherein the three-pin assembly includes a pin receiving structure and three pin units; The pin unit includes a driving mechanism, a screw, a nut structure, and a pin structure; the nut structure is fixed to the top of the pin structure; the screw and the nut structure are threadedly engaged; the driving mechanism is used to drive the screw to rotate, so that the nut structure drives the pin structure to move along the axial direction of the pin structure within the microwave waveguide; The pin accommodating structure comprises a first accommodating layer, a limiting layer, and a second accommodating layer stacked in sequence along the axial direction of the pin structure; the first accommodating layer is located between the limiting layer and the microwave waveguide; the pin accommodating structure is provided with three pin passages penetrating the first accommodating layer, the limiting layer, and the second accommodating layer; The portion of the pin channel in the first accommodating layer constitutes a first channel, the portion in the limiting layer constitutes a second channel, and the portion in the second accommodating layer constitutes a third channel; The pin structure includes a pin body and a limiting portion; the limiting portion is located at one end of the pin body close to the nut structure and is integrally connected to the pin body; the radial dimension of the limiting portion is greater than the radial dimension of the second channel; the limiting portion cooperates with the limiting layer to constitute an axial limitation on the movement of the pin structure toward the interior of the microwave waveguide.
2. The microwave impedance matching box according to claim 1, wherein: The pin accommodating structure further includes an insulating protective layer; The insulating protective layer covers the inner wall surface of the third channel.
3. The microwave impedance matching box according to claim 2, wherein: The thickness of the insulating protective layer ranges from 0.5 mm to 3 mm.
4. The microwave impedance matching box according to claim 1, wherein: The driving mechanism includes a control panel and a driving motor; The driving motor is located on a side of the second accommodating layer away from the limiting layer; The control board is located on a side of the driving motor away from the second containing layer; The control board is electrically connected to the drive motor, and the control board is used to control the working state of the drive motor.
5. The microwave impedance matching box according to claim 1, wherein: The thickness of the limiting layer is smaller than the thickness of the first accommodating layer; The thickness of the first receiving layer is smaller than the thickness of the second receiving layer.
6. The microwave impedance matching box according to claim 1, wherein: The distance between the centers of vertical projections of two adjacent pin bodies on the microwave waveguide is one quarter of the wavelength of the waveguide.
7. The microwave impedance matching box according to claim 1, wherein: The pin receiving structure further includes a polytetrafluoroethylene layer; The first accommodating layer is provided with a groove surrounding the first channel, and the polytetrafluoroethylene layer is filled in the groove.
8. The microwave impedance matching box according to claim 2, wherein: The material of the pin structure includes copper or aluminum; The material of the insulating protective layer includes polytetrafluoroethylene; The material of the first accommodating layer, the material of the limiting layer and the material of the second accommodating layer are all metals.
9. A microwave remote plasma source system, characterized in that: The invention comprises a microwave power supply, a plasma generator and the microwave impedance matching device according to any one of claims 1 to 8.
10. The microwave remote plasma source system according to claim 9, characterized in that: Also included is a detection control module; The detection control module is used to control the depth of each pin body penetrating into the microwave waveguide according to the reflection coefficient in the microwave waveguide.