Perovskite device and preparation method thereof

Abstract

The invention provides a perovskite device and a preparation method thereof, and relates to the field of photovoltaic technology. The perovskite device provided by the embodiment of the invention comprises a substrate in which a plurality of groove structures are arranged; the grid line structure is positioned in the groove structure; the thickness L1 of the grid line structure and the depth L2 of the groove structure meet a # imgabs0 # electrode, and the # imgabs0 # electrode is located on one side of the substrate and covers and contacts the grid line structure; and the perovskite cell layer is positioned on one side, far away from the substrate, of the electrode. According to the perovskite device provided by the embodiment of the invention, the grid line structure is in contact with the electrode, so that the grid line structure assists the electrode in conducting electricity, the loss of photon-generated carriers in the transmission process is reduced, a dead zone caused by a laser scribing technology is avoided, the photoelectric conversion efficiency of the perovskite device is improved, the grid line structure is embedded into the groove structure, and the photoelectric conversion efficiency of the perovskite device is improved. The flatness of the substrate can be ensured, and the preparation of a subsequent perovskite device is facilitated.

Description

Technical Field

[0001] The present invention relates to the field of photovoltaic technology, and in particular to a perovskite device and a preparation method thereof. Background Art

[0002] When preparing large-area perovskite devices using existing technologies, the device fill factor is low and the efficiency is low due to the long transmission distance of photogenerated carriers. Therefore, modular designs usually use laser scribing technology to divide large areas into independent sub-cells.

[0003] At present, the preparation of large-area perovskite modules requires at least three laser scribing processes, which respectively scratch through the TCO layer, hole transport layer / perovskite active layer / electron transport layer and metal electrode layer. The area surrounded by these three laser scribing will form a "dead zone" that cannot be used for power generation, wasting the effective area of ​​the perovskite. Summary of the Invention

[0004] Embodiments of the present invention provide a perovskite device that utilizes a gate structure in contact with an electrode, enabling the gate structure to assist the electrode in conducting electricity. This reduces the loss of photogenerated carriers during transmission, avoids the "dead zone" created by laser scribing technology, and improves the photoelectric conversion efficiency of the perovskite device. Furthermore, embedding the gate structure within a recessed structure ensures substrate flatness, facilitating subsequent perovskite device fabrication.

[0005] In a first aspect, an embodiment of the present invention provides a perovskite device, comprising:

[0006] A substrate having a plurality of groove structures;

[0007] The gate line structure is located in the groove structure; the thickness L1 of the gate line structure and the depth L2 of the groove structure meet

[0008] An electrode, located on one side of the substrate and covering the contact gate line structure;

[0009] The perovskite cell layer is located on the side of the electrode away from the substrate.

[0010] Optionally, the resistivity of the gate line structure is smaller than the resistivity of the electrode.

[0011] Optionally, L1=L2.

[0012] Optionally, the width of the gate line structure is in the range of 50 μm-100 μm, the thickness of the gate line structure is in the range of 20 μm-40 μm, and the thickness of the electrode is in the range of 100 μm-200 nm.

[0013] In a second aspect, an embodiment of the present invention provides a method for preparing a perovskite device, which is applicable to preparing the perovskite device provided by any embodiment of the present invention, and the preparation method comprises:

[0014] providing a substrate and preparing grooves on a surface of the substrate;

[0015] A gate line structure is prepared in the groove, and the thickness L1 of the gate line structure and the depth L2 of the groove meet

[0016] An electrode is prepared on one side of the substrate, and the electrode covers the contact gate line structure;

[0017] The perovskite cell layer is prepared on the side of the electrode away from the substrate.

[0018] Optionally, preparing a gate line structure in the groove includes:

[0019] forming a first gate portion in the groove by a magnetron sputtering process;

[0020] forming a second gate subdivision on a side of the first gate subdivision away from the substrate by an electroplating process, wherein the sum of the thickness of the second gate subdivision and the first gate subdivision is greater than the depth of the groove structure;

[0021] The second gate portion outside the groove structure is removed to form a gate line structure.

[0022] Optionally, forming the first gate portion in the groove by a magnetron sputtering process comprises:

[0023] Control the magnetron power to 200W-250W and the magnetron sputtering time to 5min-10min to prepare the first gate portion in the groove;

[0024] The second gate portion is formed on a side of the first gate portion away from the substrate by an electroplating process, comprising:

[0025] The electroplating current is controlled to be 0.1A-0.5A, the electroplating time is 20min-60min, and the second gate portion is prepared on the side of the first gate portion away from the substrate.

[0026] Optionally, a perovskite cell layer is prepared on a side of the electrode away from the substrate, comprising:

[0027] A hole transport layer is formed on the side of the electrode away from the substrate;

[0028] A perovskite active layer is prepared on the side of the hole transport layer away from the substrate;

[0029] An electron transport layer is prepared on the side of the perovskite active layer away from the substrate;

[0030] A metal electrode layer is prepared on the side of the electron transport layer away from the substrate.

[0031] Optionally, a perovskite active layer is prepared on a side of the hole transport layer away from the substrate, comprising:

[0032] Spreading a precursor solution on the surface of the hole transport layer away from the substrate;

[0033] Control the crystallization of the precursor solution to form the perovskite active layer.

[0034] Optionally, an electrode is prepared on one side of the substrate, comprising:

[0035] An electrode is prepared on one side of the substrate by using a magnetron sputtering process with the sputtering power controlled to 150W-250W and the sputtering time to 5min-10min.

[0036] The perovskite device provided by the embodiments of the present invention contacts the electrode via a gate structure. Photogenerated carriers in the electrode can also be transmitted within the gate structure, thereby making the gate structure assist in the electrode's electrical conductivity, reducing the loss of photogenerated carriers during transmission, avoiding the "dead zone" caused by laser scribing technology, and improving the photoelectric conversion efficiency of the perovskite device. In addition, by scratching a groove structure on the substrate and embedding the gate structure into the groove structure, the flatness of the substrate can be guaranteed, which is beneficial for the subsequent preparation of the perovskite device.

[0037] It should be understood that the content described in this section is not intended to identify the key or important features of the embodiments of the present invention, nor is it intended to limit the scope of the present invention. Other features of the present invention will become readily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0039] Figure 1 1 is a schematic structural diagram of a perovskite device provided by an embodiment of the present invention;

[0040] Figure 2 is a schematic structural diagram of a substrate provided by an embodiment of the present invention;

[0041] Figure 3 is a flow chart of a preparation method provided by an embodiment of the present invention;

[0042] Figure 4 is a schematic diagram of preparing a substrate before the groove;

[0043] Figure 5 is a schematic diagram of a substrate and gate line structure provided by an embodiment of the present invention;

[0044] Figure 6is a schematic diagram of a substrate, a gate line structure, and an electrode provided by an embodiment of the present invention;

[0045] Figure 7 is a flow chart of another preparation method provided by an embodiment of the present invention;

[0046] Figure 8 1 is a schematic structural diagram of a first gate subdivision and a second gate subdivision provided by an embodiment of the present invention;

[0047] Figure 9 This is a flow chart of another preparation method provided by an embodiment of the present invention;

[0048] Figure 10 is a schematic structural diagram of another perovskite device provided by an embodiment of the present invention;

[0049] Figure 11 This is a flow chart of another preparation method provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0050] In order to enable those skilled in the art to better understand the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0051] It should be noted that the terms "first", "second", etc. in the description and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the numbers used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0052] An embodiment of the present invention provides a perovskite device, Figure 1 is a schematic structural diagram of a perovskite device provided by an embodiment of the present invention, Figure 2 This is a schematic diagram of the structure of a substrate provided by an embodiment of the present invention, with reference to Figure 1 and Figure 2The perovskite device includes: a substrate 100, a plurality of groove structures 101 are provided in the substrate 100; a gate line structure 200 located in the groove structure 101; a thickness L1 of the gate line structure 200 and a depth L2 of the groove structure 101 satisfying The electrode 300 is located on one side of the substrate 100 and covers the contact gate line structure 200 ; the perovskite cell layer 400 is located on a side of the electrode 300 away from the substrate 100 .

[0053] refer to Figure 1 and Figure 2 The perovskite cell layer 400 includes a hole transport layer, a perovskite active layer, an electron transport layer, and a metal electrode layer, which are used to convert light energy into electrical energy and generate photogenerated carriers. The electrode 300 has a conductive ability and is used to collect the photogenerated carriers generated by the perovskite cell layer 400. Since the perovskite cell layer 400 needs to be exposed to light, the electrode 300 and the substrate 100 need to be transparent materials. For example, the material of the electrode 300 can be indium tin oxide (ITO), and the material of the substrate 100 can be glass. In order to reduce the resistance of the electrode 300, thereby reducing the loss of photogenerated carriers during transmission, it is necessary to set a grid line structure 200 on the surface of the electrode 300 to assist the electrode 300 in conducting electricity. The gate line structure 200 is embedded in the groove structure 101 of the substrate 100. The gate line structure 200 embedded in the groove structure 101 has a surface exposed to the outside. The exposed surface of the gate line structure 200 is flush with the surface of the substrate 100 having the groove structure 101. Specifically, the thickness L1 of the gate line structure 200 and the depth L2 of the groove structure 101 should be ensured to meet The exposed surface of the gate line structure 200 contacts the electrode 300, so that the photogenerated carriers in the electrode 300 can also be transmitted in the gate line structure 200. The gate line structure 200 embedded in the substrate 100 can assist the electrode 300 in conducting electricity and reduce the loss of photogenerated carriers during transmission.

[0054] The perovskite device provided by the embodiments of the present invention contacts the electrode via a gate structure. Photogenerated carriers in the electrode can also be transmitted within the gate structure, thereby making the gate structure assist in the electrode's electrical conductivity, reducing the loss of photogenerated carriers during transmission, avoiding the "dead zone" caused by laser scribing technology, and improving the photoelectric conversion efficiency of the perovskite device. In addition, by scratching a groove structure on the substrate and embedding the gate structure into the groove structure, the flatness of the substrate can be guaranteed, which is beneficial for the subsequent preparation of the perovskite device.

[0055] Optionally, the resistivity of the gate structure is lower than that of the electrode. The gate structure can be made of silver, copper, or nickel. The gate structure is connected in parallel to the electrode, providing a path with lower resistance for photogenerated carriers, thereby reducing losses during transmission.

[0056] refer to Figure 1 and Figure 2 , L1=L2, the thickness L1 of the gate line structure 200 is equal to the depth L2 of the groove structure 101, the flatness of the substrate 100 and the gate line structure 200 is good, and the electrode 300 located on the substrate 100 can be completely attached to the substrate 100 and the gate line structure 200, avoiding virtual connection between the electrode 300 and the gate line structure 200.

[0057] refer to Figure 1 The width L3 of the gate line structure 200 ranges from 50μm to 100μm, the thickness L1 of the gate line structure 200 ranges from 20μm to 40μm, and the thickness L4 of the electrode 300 ranges from 100μm to 200nm. A narrowing of the width L3 of the gate line structure 200 will increase the resistance of the gate line structure 200, while an excessively large width L3 of the gate line structure 200 will cause the light transmittance of the substrate 100 to deteriorate. A width L3 of the gate line structure 200 between 50μm and 100μm can ensure the conductive performance of the gate line structure 200 while ensuring that the light transmittance of the substrate 100 is not too low. A too small thickness L1 of the gate line structure 200 will also increase the resistance of the gate line structure. Therefore, the thickness L1 of the gate line structure 200 needs to be in the range of 20μm to 40μm, while ensuring the small size of the perovskite device and the low resistance of the gate line structure 200. Likewise, the thickness L4 of the electrode 300 is in the range of 100 μm-200 nm, which can take into account both the small size of the perovskite device and the low resistance of the electrode 300 .

[0058] Based on the same inventive concept, an embodiment of the present invention provides a method for preparing a perovskite device, which is applicable to preparing the perovskite device provided by any embodiment of the present invention. Figure 3 This is a flow chart of a preparation method provided by an embodiment of the present invention, with reference to Figure 3 , the preparation method comprises:

[0059] S101 , providing a substrate and preparing grooves on the surface of the substrate.

[0060] Figure 4 This is a schematic diagram of the substrate before preparing the groove. Figure 2 The substrate in FIG is the substrate after groove 101 is prepared. Optionally, groove 101 is scratched on the substrate by laser scribing. The shape of groove 101 can be designed as needed. To reduce the resistance of the gate line structure, the width and depth of groove 101 can be increased. To improve the light transmittance of the perovskite device, the width and depth of groove 101 can be reduced. For example, the width of groove 101 ranges from 50 to 100 μm, and the depth of groove 101 ranges from 20 to 40 μm.

[0061] S102, preparing a gate line structure in the groove, wherein the thickness L1 of the gate line structure and the depth L2 of the groove satisfy

[0062] Figure 5 This is a schematic diagram of a substrate and gate line structure provided by an embodiment of the present invention, with reference to Figure 2 and Figure 5 In order to reduce the resistance of the electrode 300 and thus reduce the loss of photogenerated carriers during transmission, it is necessary to set a gate line structure 200 on the surface of the electrode 300 to assist the electrode 300 in conducting electricity. The gate line structure 200 embedded in the groove structure 101 has a surface exposed to the outside. It can be considered that the exposed surface of the gate line structure 200 is flush with the surface of the substrate 100 having the groove structure 101 .

[0063] S103 , preparing an electrode on one side of the substrate, wherein the electrode covers the contact gate line structure.

[0064] Figure 6 is a schematic diagram of a substrate, a gate line structure and an electrode provided by an embodiment of the present invention, with reference to Figure 6 The electrode 300 covers the substrate 100 and the gate line structure 200 and contacts the gate line structure 200. Photogenerated carriers in the electrode 300 can also be transmitted through the gate line structure 200, thereby reducing the loss of photogenerated carriers during transmission. Because the gate line structure 200 is flush with the surface of the substrate 100, the electrode 300 formed on the substrate will also remain flat.

[0065] S104. Prepare a perovskite cell layer on the side of the electrode away from the substrate.

[0066] refer to Figure 1 The high flatness of the electrode 300 is conducive to the preparation of a highly flat perovskite cell layer 400, and the flat surface of the electrode 300 can promote the formation of a continuous, dense and pinhole-free perovskite cell layer 400, thereby reducing defects inside the perovskite cell layer 400 and improving the light absorption efficiency of the perovskite cell layer.

[0067] In the manufacturing method provided by the embodiment of the present invention, the thickness L1 of the gate line structure and the depth L2 of the groove meet the requirements. During the subsequent preparation of electrodes and perovskite battery layers, the electrodes and perovskite battery layers on the substrate and gate line structure will also remain flat, thereby reducing defects inside the electrodes and perovskite battery layers, ensuring the uniformity of the electrodes and perovskite battery layers, improving the repeatability and stability of the preparation process, and improving the light absorption efficiency of the perovskite battery layer and the carrier transmission efficiency of the electrode.

[0068] Figure 7 is a flow chart of another preparation method provided by an embodiment of the present invention, Figure 7The preparation method shown in the figure further illustrates the process of preparing the gate line structure based on the above embodiment. Figure 7 , the preparation method comprises:

[0069] S201 , providing a substrate and preparing grooves on the surface of the substrate.

[0070] S202 , preparing a first gate portion in the groove by a magnetron sputtering process.

[0071] Optionally, forming the first gate portion in the groove by a magnetron sputtering process may include:

[0072] The magnetron power is controlled between 200W and 250W, and the magnetron sputtering time is controlled between 5 and 10 minutes to form the first gate segment in the groove. The magnetron sputtering process can deposit and form the first gate segment in the groove. Controlling the magnetron sputtering power and time can control the thickness of the first gate segment. Using these parameters, magnetron sputtering can produce a first gate segment of appropriate thickness, providing a conductive electrode for the subsequent electroplating process.

[0073] Figure 8 This is a schematic diagram of the structure of a first gate subdivision and a second gate subdivision provided by an embodiment of the present invention, with reference to Figure 8 The thickness of the first gate segment 201 is in the range of 200 nm to 400 nm. The first gate segment 201 is prepared by magnetron sputtering to provide a conductive electrode for electroplating.

[0074] S203 , forming a second gate subdivision on a side of the first gate subdivision away from the substrate by an electroplating process, wherein the sum of the thickness of the second gate subdivision and the first gate subdivision is greater than the depth of the groove structure.

[0075] Optionally, forming the second gate sub-portion on the side of the first gate sub-portion 201 away from the substrate by an electroplating process may include:

[0076] The electroplating current is controlled to be 0.1A-0.5A, the electroplating time is 20min-60min, and the second gate portion is prepared on the side of the first gate portion away from the substrate.

[0077] refer to Figure 8 Specifically, compared to magnetron sputtering, electroplating offers the advantages of low cost and high deposition rate. After forming the first gate segment 201 via magnetron sputtering, the second gate segment 202 can be deposited on top of the first gate segment 201 via electroplating, using the first gate segment 201 as a conductive electrode. Using an electroplating current of 0.1A-0.5A and an electroplating time of 20-60 minutes, a second gate segment 202 of appropriate size can be formed.

[0078] S204, removing the second gate portion outside the groove structure to form a gate line structure, wherein the thickness L1 of the gate line structure satisfies the depth L2 of the groove.

[0079] refer to Figure 5 and Figure 8 Specifically, the second gate division 202 covers the surface of the substrate 100. In order to ensure the flatness and light transmittance of the substrate 100, it is necessary to remove the second gate division 202 located outside the groove structure through a grinding and polishing process to obtain an embedded gate line structure 200. The exposed surface of the gate line structure 200 is flush with the surface of the substrate 100.

[0080] S205 , preparing an electrode on one side of the substrate, wherein the electrode covers the contact gate line structure.

[0081] S206. Prepare a perovskite cell layer on the side of the electrode away from the substrate.

[0082] The preparation method provided in the embodiment of the present invention provides a specific process flow and parameters for preparing the gate line structure. By combining magnetron sputtering and electroplating, the cost of preparing the gate line structure can be reduced and the preparation speed of the gate line structure can be accelerated.

[0083] Figure 9 is a flow chart of another preparation method provided by an embodiment of the present invention, Figure 9 The preparation method shown in the embodiment further illustrates the process of preparing the perovskite battery layer. Figure 9 , the preparation method comprises:

[0084] S301 , providing a substrate and preparing grooves on the surface of the substrate.

[0085] S302 , preparing a first gate portion in the groove by a magnetron sputtering process.

[0086] S303 , forming a second gate sub-portion on a side of the first gate sub-portion away from the substrate by an electroplating process, wherein the sum of the thickness of the second gate sub-portion and the first gate sub-portion is greater than the depth of the groove structure.

[0087] S304, removing the second gate portion outside the groove structure to form a gate line structure, wherein the thickness L1 of the gate line structure satisfies the depth L2 of the groove.

[0088] S305 , preparing an electrode on one side of the substrate, wherein the electrode covers the contact gate line structure.

[0089] S306 , preparing a hole transport layer on the side of the electrode away from the substrate.

[0090] Figure 10is a schematic structural diagram of another perovskite device provided by an embodiment of the present invention, with reference to Figure 10 Nickel oxide is sputtered onto the electrode 300 by magnetron sputtering to form a hole transport layer 401. The magnetron sputtering power range is 100-200 W, and the sputtering time range is 3-5 minutes. The thickness of the hole transport layer 401 is in the range of 5-10 nm. S307: A perovskite active layer is formed on the side of the hole transport layer away from the substrate.

[0091] refer to Figure 10 The perovskite active layer 402 is used to absorb light energy and generate electrons and holes, and the hole transport layer 401 is used to transport holes.

[0092] refer to Figure 10 Optionally, a perovskite active layer 402 is prepared on the side of the hole transport layer 401 away from the substrate, comprising: spreading a precursor solution on the surface of the hole transport layer 401 away from the substrate; and controlling the crystallization of the precursor solution to form the perovskite active layer 402. The precursor solution can crystallize to form perovskite crystals, thereby forming the perovskite active layer 402, which can convert electrical energy into light energy. To prepare the precursor solution, lead iodide, formamidine iodine, methylamine iodine, and cesium iodide are mixed in proportion, and a mixed solvent of dimethyl sulfoxide and dimethylformamide is added, wherein the volume ratio of dimethyl sulfoxide to dimethylformamide is 1:4, thereby obtaining a perovskite precursor solution. The precursor solution is added dropwise onto the electrode 300 , and after being evenly spread, spin coating is performed at a speed of 1000 rpm-6000 rpm. 100 μL of chlorobenzene is added dropwise 35 seconds after spin coating, and the solution is heated at 100° C. for 10-20 minutes to obtain the perovskite active layer 402 .

[0093] The flush substrate 100 and gate line structure 200 facilitate the preparation of a highly flat electrode 300. The highly flat electrode 300 facilitates the uniform spreading of the precursor solution, thereby promoting uniform crystallization of the perovskite crystals, forming a continuous, dense, and pinhole-free perovskite active layer 402. This reduces defects and non-radiative recombination centers in the perovskite active layer 402, improving the light absorption efficiency and charge transfer efficiency of the perovskite active layer 402. Furthermore, the repeatability and stability of the perovskite active layer 402 preparation process are improved.

[0094] S308 , preparing an electron transport layer on a side of the perovskite active layer away from the substrate.

[0095] refer to Figure 10 The electron transport layer 403 is used to transport the electrons generated by the perovskite active layer 402. 60 The electron transport layer 403 can be prepared by evaporating C 60The temperature is 530-550℃, the temperature for evaporating 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline is 100-110℃, C 60 The thickness is 15-25 nm, and the thickness of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline is 2-5 nm.

[0096] S309 , preparing a metal electrode layer on a side of the electron transport layer away from the substrate.

[0097] refer to Figure 10 The metal electrode layer 404 serves as the electrode of the perovskite cell for conducting electricity. The metal electrode layer 404 can be formed by depositing a copper electrode via metal evaporation, wherein the evaporation deposition operating current is 80-110A, and the thickness of the metal electrode layer 404 is 80-120nm.

[0098] The preparation method provided in the embodiment of the present invention prepares a perovskite active layer by crystallization of a precursor solution, which can promote the uniform crystallization of perovskite crystals to form a continuous, dense and pinhole-free perovskite active layer, and reduce the defects of the perovskite active layer, thereby improving the light absorption efficiency and charge transfer efficiency of the perovskite active layer.

[0099] Figure 11 is a flow chart of another preparation method provided by an embodiment of the present invention, Figure 11 The preparation method shown in the embodiment further illustrates the process of preparing the electrode. Figure 11 , the preparation method comprises:

[0100] S401 , providing a substrate and preparing grooves on the surface of the substrate.

[0101] S402 , preparing a first gate portion in the groove by a magnetron sputtering process.

[0102] S403 , forming a second gate sub-portion on a side of the first gate sub-portion away from the substrate by an electroplating process, wherein the sum of the thickness of the second gate sub-portion and the first gate sub-portion is greater than the depth of the groove structure.

[0103] S404, removing the second gate portion outside the groove structure to form a gate line structure, wherein the thickness L1 of the gate line structure satisfies the depth L2 of the groove.

[0104] S405 , using a magnetron sputtering process, controlling the sputtering power to be 150W-250W, and the sputtering time to be 5min-10min, to prepare an electrode on one side of the substrate, wherein the electrode covers the contact gate line structure.

[0105] For example, the electrode material can be ITO. The thickness of the electrode produced by the above process ranges from 100nm to 200nm, and the composite structure of the gate line structure and electrode has a square resistance of less than 0.5Ω / sq. The above process can produce a flat and uniform electrode, which helps form a flat perovskite cell layer.

[0106] S406 , preparing a hole transport layer on the side of the electrode away from the substrate.

[0107] S407 , preparing a perovskite active layer on a side of the hole transport layer away from the substrate.

[0108] S408 , preparing an electron transport layer on a side of the perovskite active layer away from the substrate.

[0109] S409 , preparing a metal electrode layer on a side of the electron transport layer away from the substrate.

[0110] The preparation method provided in the embodiment of the present invention can prepare a flat and uniform electrode through a magnetron sputtering process. The flatness of the electrode surface has a significant impact on the quality of the perovskite battery layer. Therefore, an electrode with high flatness is conducive to the formation of a high-quality perovskite battery layer, thereby improving the light absorption efficiency and energy conversion efficiency of the perovskite device.

[0111] The above specific embodiments do not limit the scope of protection of the present invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions may be made based on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention are intended to be included within the scope of protection of the present invention.

Claims

1. A perovskite device, characterized in that: include: a substrate having a plurality of groove structures disposed therein; The gate line structure is located in the groove structure; the thickness L1 of the gate line structure and the depth L2 of the groove structure meet an electrode, located on one side of the substrate and covering and contacting the gate line structure; The perovskite cell layer is located on a side of the electrode away from the substrate.

2. The perovskite device according to claim 1, wherein The resistivity of the gate line structure is lower than the resistivity of the electrode.

3. The perovskite device according to claim 1, characterized in that L1=L2.

4. The perovskite device according to claim 1, wherein The width of the gate line structure is in the range of 50 μm-100 μm, the thickness of the gate line structure is in the range of 20 μm-40 μm, and the thickness of the electrode is in the range of 100 μm-200 nm.

5. A method for preparing a perovskite device, characterized in that: Suitable for preparing the perovskite device according to any one of claims 1 to 4, the preparation method comprising: Providing a substrate and preparing grooves on a surface of the substrate; A gate line structure is prepared in the groove, and the thickness L1 of the gate line structure and the depth L2 of the groove meet An electrode is prepared on one side of the substrate, wherein the electrode covers and contacts the gate line structure; A perovskite cell layer is prepared on the side of the electrode away from the substrate.

6. The preparation method according to claim 5, characterized in that Preparing a gate line structure in the groove, comprising: forming a first gate portion in the groove by a magnetron sputtering process; forming a second gate subdivision on a side of the first gate subdivision away from the substrate by an electroplating process, wherein the sum of the thickness of the second gate subdivision and the first gate subdivision is greater than the depth of the groove structure; The second gate sub-portion located outside the groove structure is removed to form a gate line structure.

7. The preparation method according to claim 6, characterized in that The first gate portion is formed in the groove by a magnetron sputtering process, comprising: Controlling the magnetron power to 200W-250W and the magnetron sputtering time to 5min-10min, and preparing the first gate portion in the groove; The second gate sub-portion is formed on a side of the first gate sub-portion away from the substrate by an electroplating process, comprising: The electroplating current is controlled to be 0.1A-0.5A, the electroplating time is controlled to be 20min-60min, and the second gate portion is prepared on a side of the first gate portion away from the substrate.

8. The preparation method according to claim 5, characterized in that The perovskite cell layer is prepared on a side of the electrode away from the substrate, comprising: preparing a hole transport layer on a side of the electrode away from the substrate; preparing a perovskite active layer on a side of the hole transport layer away from the substrate; preparing an electron transport layer on a side of the perovskite active layer away from the substrate; A metal electrode layer is prepared on a side of the electron transport layer away from the substrate.

9. The preparation method according to claim 8, characterized in that A perovskite active layer is prepared on a side of the hole transport layer away from the substrate, comprising: spreading a precursor solution on a surface of the hole transport layer away from the substrate; The precursor solution is controlled to crystallize to form a perovskite active layer.

10. The preparation method according to claim 5, characterized in that The method comprises preparing an electrode on one side of the substrate, comprising: An electrode is prepared on one side of the substrate by using a magnetron sputtering process, controlling the sputtering power to be 150W-250W and the sputtering time to be 5min-10min.

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