Full-light-operated reconfigurable logic device based on zinc oxide / perovskite core-shell microwire and preparation method of full-light-operated reconfigurable logic device
Through the optical gating effect of the zinc oxide/perovskite core-shell microwire structure, multiple logic gate functions can be realized on a single device, solving the problem of single function of existing photoelectric logic gate devices, reducing system complexity and power consumption, and improving integration.
Patent Information
- Application Number
- CN202510782447.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-06-12
- Publication Date
- 2025-09-12
AI Technical Summary
Existing optoelectronic logic gate devices are mostly based on unidirectional carrier transport mechanisms. A single device can only realize a single logic function. Multifunctional logic gates need to rely on the combination of multiple devices, which leads to increased difficulty in system integration and power consumption.
Using a zinc oxide/perovskite core-shell microwire structure, the perovskite shell layer conducts conductivity modulation on the optical gating effect of the ZnO channel. The device exhibits negative and positive photoconductivity effects under different intensities of visible light and ultraviolet light, realizing a fully functional logic gate function.
Implementing multiple logic gate functions on a single device reduces system design complexity and power consumption, improves integration, and breaks through the physical limits and energy consumption bottlenecks of electronic logic gate devices.
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Figure CN120640892A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of semiconductor optoelectronic logic devices, and specifically relates to a fully optically controlled reconfigurable logic device based on zinc oxide / perovskite core-shell microwires and a preparation method thereof. Background Art
[0002] With the rapid development of big data and artificial intelligence technologies, the amount of global information data is growing exponentially, which poses unprecedented challenges to the speed, energy efficiency and integration of information processing systems. As the core components of data processing, traditional electronic logic gate devices are limited by the physical limits of Moore's Law and the energy consumption bottleneck of Joule's Law, making it difficult to meet the needs of efficient processing of massive amounts of data. In contrast, optoelectronic logic gate devices can break through the delay and power consumption limitations of electronic interconnection through direct coupling of optical and electrical signals, providing a revolutionary solution for the next generation of high-speed, low-power computing systems. However, existing optoelectronic logic gate devices are mostly based on unidirectional carrier transport mechanisms. A single device can only realize a single logical function, and multifunctional logic gates rely on the combination of multiple devices. However, the complex circuit design significantly increases the difficulty of system integration and power consumption. Summary of the Invention
[0003] Purpose of the Invention: To address the problem that existing photoelectric logic gate devices are mostly based on a unidirectional carrier transport mechanism, a single device can only realize a single logic function, and multifunctional logic gates require the combination of multiple devices, but the complex circuit design significantly increases the difficulty of system integration and power consumption. The present invention proposes a fully optically controlled reconfigurable logic device based on zinc oxide / perovskite core-shell microwires and its preparation method. The ZnO microwires are wrapped in a perovskite shell layer, and the perovskite modulates the conductivity of the ZnO channel through photogating. The device exhibits negative photoconductivity under visible light irradiation, negative photoconductivity under weak ultraviolet light irradiation, and positive photoconductivity under strong ultraviolet light irradiation. Based on the optically controlled positive and negative photoconductivity effects of this system, a fully functional basic logic gate can be realized.
[0004] Technical solution: A fully optically controlled reconfigurable logic device based on zinc oxide / perovskite core-shell microwires, comprising: a ZnO microwire as a core, a perovskite shell, and indium particles. The ZnO microwire is suspended and fixed on quartz glass via the indium particles, and the ZnO microwire is wrapped by the perovskite shell.
[0005] The ZnO channel's light-gating effect is modulated by the perovskite shell, exhibiting a negative photoconductivity effect under visible light irradiation, a negative photoconductivity effect under weak ultraviolet light irradiation, and a positive photoconductivity effect under strong ultraviolet light irradiation;
[0006] By changing the wavelength and power of the modulated light, different logic gate functions can be achieved.
[0007] Furthermore, the ZnO micron wire has a diameter of 5-30 μm and a length of 1000-5000 μm.
[0008] Furthermore, the material of the perovskite shell layer is CH3NH3PbBr3, and the thickness is 300-800nm.
[0009] Furthermore, the thickness of the indium particles is 50-100 μm, and the distance between the indium particles at both ends is 2000-3000 μm.
[0010] The present invention discloses a method for a fully optically controlled reconfigurable logic device based on zinc oxide / perovskite core-shell microwires, comprising the following steps:
[0011] Step 1: Using chemical vapor deposition technology to grow ZnO micron wires as the core;
[0012] Step 2: Fix two quartz plates parallel to each other on a quartz plate;
[0013] Step 3: Transfer the ZnO microwires and bridge them between two quartz plates to form a suspended state, and use indium particles to fix the two ends of the ZnO as electrodes;
[0014] Step 4: Deposit a perovskite shell layer on the ZnO microwire to obtain a fully optically controlled reconfigurable logic device based on the ZnO / perovskite core-shell microwire.
[0015] Beneficial effects: Compared with the existing technology, it has the following advantages:
[0016] (1) The present invention uses ZnO microwires as the core and perovskite CH3NH3PbBr3 as the shell to construct a ZnO / CH3NH3PbBr3 core-shell microwire-based heterojunction, and sets In as electrodes at both ends of the microwire device. The ZnO microwires serve as the core layer to confine the device to the micro-nano range, and the CH3NH3PbBr3 shell layer serves as the optical gating layer to modulate the conductivity of the ZnO channel: under visible light excitation, the conductivity decreases, exhibiting negative photoconductivity; under weak ultraviolet light excitation, the device conductivity also decreases, exhibiting negative photoconductivity; under strong ultraviolet light excitation, the device conductivity increases, exhibiting positive photoconductivity. Based on this positive and negative conductivity effect, a fully functional, fully optically controlled logic gate can be realized on a single device, increasing the device's integration and reducing the complexity of the design. Negative photoconductivity originates from the trapping effect of the interface oxygen vacancy defect state on the carriers, and positive photoconductivity originates from the excitation of the intrinsic carriers in ZnO. The conversion of negative photoconductivity to positive photoconductivity originates from the competition between the trapping effect and the excitation of the intrinsic carriers in ZnO. The carrier dynamics process is as follows: Figure 4 shown.
[0017] (2) The present invention reduces process costs and operational difficulty through chemical vapor deposition and thermal evaporation technology.
[0018] (3) The fully optically controlled reconfigurable logic device based on zinc oxide / perovskite core-shell microwires disclosed in the present invention has a simple structure, is easy to prepare, and can realize the basic logic gate functions with complete functions on a single device, thereby greatly increasing the integration of the device and reducing the design complexity, instability and power consumption of the logic circuit. It can break through the limitations of electronic logic gate devices in calculating large-scale information and provide technical support for the development of next-generation computing processors and integrated logic circuits. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Figure 1 This is a schematic diagram of the structure of the ZnO / CH3NH3PbBr3 core-shell microwire-based all-optical control reconfigurable logic device proposed in the present invention;
[0020] Figure 2 This is a flow chart for preparing the fully optically controlled reconfigurable logic device based on ZnO / CH3NH3PbBr3 core-shell microwires proposed in the present invention;
[0021] Figure 3 The current-voltage (IV) characteristic curve and transient current diagram (It) of the all-optically controlled reconfigurable logic device based on ZnO / CH3NH3PbBr3 core-shell microwires proposed in this invention;
[0022] Figure 4 The proposed ZnO / CH3NH3PbBr3 core-shell microwire all-light-controlled reconfigurable logic device under different illumination conditions is the carrier dynamics process;
[0023] Figure 5 The logic gate design diagram and truth table of the ZnO / CH3NH3PbBr3 core-shell microwire-based all-optical-controlled reconfigurable logic device proposed in this invention;
[0024] Figure 6 This is a diagram showing the logic gate implementation effect of the ZnO / CH3NH3PbBr3 core-shell microwire all-optically controlled reconfigurable logic device proposed in the present invention. DETAILED DESCRIPTION
[0025] To make the objectives, technical solutions and advantages of the present invention clearer, the following will further illustrate the fully optically controlled reconfigurable logic device based on zinc oxide / perovskite core-shell microwires and its preparation method proposed in the present invention in combination with the accompanying drawings and embodiments.
[0026] Example 1:
[0027] like Figure 1As shown, this embodiment proposes a fully optically controlled reconfigurable logic device based on zinc oxide / perovskite core-shell microwires, including: a ZnO microwire as a core, a perovskite shell layer and an indium particle. The ZnO microwire is suspended and fixed on quartz glass through the indium particle, that is, the ZnO microwire is bridged between two small quartz substrates to form a suspended state, and the two ends are fixed with indium particles as electrodes and are wrapped by the perovskite shell layer.
[0028] Specifically, in this embodiment, the ZnO microwire has a diameter of 5-30 μm and a length of 1000-5000 μm. The perovskite shell is made of CH3NH3PbBr3 and has a thickness of 300-800 nm. The indium particles are 50-100 μm thick, and the distance between the indium particles at both ends is 2000-3000 μm.
[0029] The all-optically controlled reconfigurable logic device proposed in this embodiment modulates the conductivity of the ZnO channel through the photogating effect of perovskite. Under the continuous light excitation of 520nm, the conductivity decreases and exhibits negative photoconductivity. The device is stable under low power (<50.79μW / cm 2 )365nm continuous light excitation, the conductivity decreases and shows negative photoconductivity; the device is 2 )365nm continuous light excitation, the conductivity increases and shows positive photoconductivity. That is, it shows negative photoconductivity effect when irradiated by visible light, negative photoconductivity effect when irradiated by weak ultraviolet light, and positive photoconductivity effect when irradiated by strong ultraviolet light.
[0030] The light-controlled positive and negative photoconductivity effects based on this system can realize basic logic gates with complete functions, including realizing different logic gate functions (OR, AND, NOR, NOT, NAND) by changing the wavelength and frequency of the modulated light and adjusting the basic current of the device, including: under low-power visible light modulation, two beams of ultraviolet light are used as input signals to realize OR gate; under high-power visible light modulation, two beams of ultraviolet light are used as input signals to realize AND gate; under low-power ultraviolet light modulation, two beams of visible light are used as input signals to realize NOR and NOT gates; under high-power ultraviolet light modulation, two beams of visible light are used as input signals to realize NAND gate.
[0031] Example 2:
[0032] like Figure 2 As shown, this embodiment proposes a method for preparing a fully optically controlled reconfigurable logic device based on zinc oxide / perovskite core-shell microwires, comprising the following steps:
[0033] Step 1: Using chemical vapor deposition (CVD) technology to grow ZnO micron wires as the core. CVD involves using ZnO powder and C powder as reaction materials in a high-temperature tube furnace at 1050°C, with argon and oxygen as carrier and reaction gases, for a reaction period of 2 hours. The specific steps include: first, mixing ZnO powder and C powder in a 1:1 mass ratio and placing the mixture in a 1050°C tube furnace. Argon (150 sccm) and oxygen (15 sccm) are introduced as carrier and reaction gases, respectively. After a 2-hour reaction, high-quality ZnO micron wires are formed on a silicon wafer placed downstream of the tube furnace.
[0034] Step 2: Fix two small quartz plates parallel to each other on a large quartz plate;
[0035] Step 3: Transfer the ZnO micron wires and bridge them between two small quartz substrates to form a suspended state. Use indium particles to fix the two ends of the ZnO. Heat and melt them on a hot plate at 165°C for 2 minutes, and cool and solidify them to serve as electrodes.
[0036] Step 4: Deposit the PbBr2 shell layer on the ZnO micron wire using thermal evaporation at a deposition rate of The process conditions of thermal evaporation in this step are: working pressure is 4×10 -4 Pa, heating current is 17-21A, deposition rate is Sedimentation time 10-90min.
[0037] Step 5: Use chemical vapor deposition to convert the PbBr2 shell on the ZnO microwire into CH3NH3PbBr3. The CVD process conditions are: operating pressure 100 Pa, argon flow rate 55 sccm, temperature 115°C, and time 30-120 minutes.
[0038] At this point, a photodetector based on core-shell microwires was prepared; among them, the perovskite CH3NH3PbBr3 shell layer serves as the absorption layer for visible light, and the ZnO core mainly serves as the absorption layer for ultraviolet light.
[0039] like Figure 1 As shown in FIG, a semiconductor parameter test system is used, and a 365nm ultraviolet light source and a 520nm visible light source are added to construct an optoelectronic test platform. The current-voltage (IV) curve and transient current (It) curve of the fully optically controlled reconfigurable logic device prepared in this embodiment under dark and light conditions are shown in FIG. Figure 3 As shown in Figure 2, under 520nm visible light excitation, the conductivity of the logic device prepared in this embodiment decreases, exhibiting negative photoconductivity. Under weak 365nm ultraviolet light irradiation, the device conductivity also decreases, exhibiting negative photoconductivity. When the 365nm ultraviolet light is further enhanced, the device undergoes a transformation from negative photoconductivity to positive photoconductivity.
[0040] like Figure 5 As shown in the figure, based on the UV-visible tunable positive and negative light response of the ZnO MW / CH3NH3PbBr3 core-shell heterostructure device, a fully functional all-light-controlled logic gate system was designed. This single-device system can execute five basic logic gates: "OR", "AND", "NAND", "NOR" and "NOT". In this system, the key factor in regulating the logic function is "light gating modulation", which is to use light of different wavelengths and intensities to modulate the basic conductance of the device. In the process of logic function verification, the two input signals of the optical device are defined as input1 and input2, where "1" and "0" represent the on and off states of the signal light, respectively. The output signal is an electrical signal, where "1" and "0" indicate that the output current is greater than or equal to and less than the reference current, respectively (see Figure 6 ). Figure 6 The time-resolved “OR” and “AND” transient photocurrent curves are shown in a. 2 ) modulation, there are two beams of ultraviolet light (365nm, 76.5μW / cm 2 ) input signal. As long as one of the UV input signals is "1", the output current is above the reference line (dark current, 90nA), indicating an output logic state of "1". Only when both visible light input signals are "0" at the same time does the drain current show a logic "0", thus executing a logic "OR" gate. Increasing the power of the modulated light to 200nW / cm 2 The photocurrents from the "10" and "01" UV inputs are pulled below the reference line, resulting in a "0" output. Only when both UV input beams are on does the output become "1," thus implementing an "AND" logic gate. Unlike conventional electronics designs, this structure can achieve bidirectional conversion between "OR" and "AND" simply by varying the power of the modulated light, demonstrating its potential. Figure 6 b shows the time-resolved transient photocurrent curves of "NOR", "NOT" and "NAND". 2 ) modulation, there are two beams of visible light (520nm, 36nW / cm 2 ) input signal. As long as one of the visible light input signals is "1", the output current is below the reference line, indicating an output logic state of "0". Only when both visible light input signals are "0" at the same time does the drain current show a logic "1", thus executing the logic "NOR" and "NOT" gates. Increasing the modulated UV light power to 102μW / cm 2The photocurrents of the "10" and "01" visible light inputs are pulled above the reference line, outputting a "1" signal. Only when both visible light inputs are on does the output become "0," realizing a "NAND" logic gate.
[0041] It can be seen that the single ZnO / CH3NH3PbBr3 core-shell micron-wire fully optically controlled reconfigurable logic device prepared in this embodiment can realize the basic logic gate functions with complete functions, greatly increase the integration of the device, reduce the design complexity, instability and power consumption of the logic circuit, and can break through the limitations of electronic logic gate devices in calculating large-scale information, providing technical support for the development of next-generation computing processors and integrated logic circuits.
Claims
1. A fully optically controlled reconfigurable logic device based on zinc oxide / perovskite core-shell microwires, characterized by: include: A ZnO micron wire as a core, a perovskite shell layer and an indium particle, wherein the ZnO micron wire is suspended and fixed on the quartz glass through the indium particle, and the ZnO micron wire is wrapped by the perovskite shell layer; The ZnO channel's light-gating effect is modulated by the perovskite shell, exhibiting a negative photoconductivity effect under visible light irradiation, a negative photoconductivity effect under weak ultraviolet light irradiation, and a positive photoconductivity effect under strong ultraviolet light irradiation; By changing the wavelength and power of the modulated light, different logic gate functions can be achieved.
2. The all-optically controlled reconfigurable logic device based on zinc oxide / perovskite core-shell microwires according to claim 1, characterized in that: The ZnO micron wire has a diameter of 5-30 μm and a length of 1000-5000 μm.
3. The all-optically controlled reconfigurable logic device based on zinc oxide / perovskite core-shell microwires according to claim 1, characterized in that: The material of the perovskite shell layer is CH3NH3PbBr3, and the thickness is 300-800nm.
4. The all-optically controlled reconfigurable logic device based on zinc oxide / perovskite core-shell microwires according to claim 1, characterized in that: The thickness of the indium particles is 50-100 μm, and the distance between the indium particles at both ends is 2000-3000 μm.
5. A method for preparing a fully optically controlled reconfigurable logic device based on zinc oxide / perovskite core-shell microwires according to any one of claims 1 to 4, characterized in that: The following steps are involved: Step 1: Using chemical vapor deposition technology to grow ZnO micron wires as the core; Step 2: Fix two quartz plates parallel to each other on a quartz plate; Step 3: Transfer the ZnO microwires and bridge them between two quartz plates to form a suspended state, and use indium particles to fix the two ends of the ZnO as electrodes; Step 4: Deposit a perovskite shell layer on the ZnO microwire to obtain a fully optically controlled reconfigurable logic device based on the ZnO / perovskite core-shell microwire.