Resin composition, underfill material, overmold sealing material, semiconductor device, sheet insulating material, metal-clad laminate, circuit board, multilayer substrate, and multilayer circuit board

Abstract

The resin composition contains a thermosetting resin component (A) and an inorganic filler (B). The particle size distribution of the inorganic filler (B) has a particle size (D50) of less than 1 [mu] m when the cumulative value in the particle size distribution measurement is 50% and a particle size (D99) of less than 5 [mu] m when the cumulative value in the particle size distribution measurement is 99%, and a part or all of the surface of the inorganic filler (B) is surface-treated with a cyclic silane compound (C) represented by formula (1). The content of the inorganic filler (B) is from 100 parts by mass to 500 parts by mass (inclusive) per 100 parts by mass of the thermosetting resin component (A). (In formula (1), R1 represents an aryl group. OR2 is independent, and R2 is methyl or ethyl. And n represents an integer of 3-5 (inclusive). ) Formula (1) # imgabs0 #

Description

Technical Field

[0001] The present invention relates to a resin composition and its use. More specifically, it relates to a resin composition useful as an insulating material in the field of electronic materials, an underfill material, an overmolding sealing material, a semiconductor device, a sheet-like insulating material, a metal-clad laminate, a circuit board, a multilayer substrate, and a multilayer circuit board using the same. Background Art

[0002] In order to ensure suitable moldability, the resin composition used in a sealing material for sealing a semiconductor, an insulating layer of a circuit board, and the like desirably has a low viscosity at the temperature during molding.

[0003] For example, in recent years, semiconductor devices have been required to achieve higher functionality, be smaller, and be thinner. This has led to a decrease in the wiring width within semiconductor packages, and a trend towards a smaller gap between the chip and the supporting substrate. If the viscosity of the encapsulating resin composition is too high, the fluidity during molding deteriorates, making it more likely that the resin will not be able to fill gaps between components.

[0004] Therefore, in order to reduce the viscosity of the resin composition, it is conceivable to reduce the filler content. However, this approach cannot sufficiently reduce the linear expansion coefficient of the cured product, and may increase thermal stress and thus cause a problem of reduced reliability.

[0005] Conventionally, as resin compositions for electronic materials that achieve both low viscosity and high physical strength of the cured product, Patent Document 1 proposes an underfill material using alumina treated with an aminosilane coupling agent as a filler, and Patent Document 2 proposes an overmolding sealing material using fused silica treated with a silane coupling agent as a filler.

[0006] Prior art literature

[0007] Patent Literature

[0008] Patent Document 1: Japanese Patent Application Publication No. 2019-77771

[0009] Patent Document 2: Japanese Patent No. 6315170 Summary of the Invention

[0010] The resin composition according to one embodiment of the present invention contains a thermosetting resin component (A) and an inorganic filler (B), wherein the particle size distribution of the inorganic filler (B) is such that the particle size at the 50th percentile cumulative value in the particle size distribution measurement (D50) is less than 1 μm and the particle size at the 99th percentile cumulative value in the particle size distribution measurement (D99) is less than 5 μm, a portion or all of the surface of the inorganic filler (B) is surface-treated with a cyclic silane compound (C) represented by the following formula (1), and the content of the inorganic filler (B) is 100 parts by mass or more and 500 parts by mass or less relative to 100 parts by mass of the thermosetting resin component (A).

[0011]

Chemical Formula 1

[0012] Formula (1):

[0013]

[0014] (R in formula (1) 1 is an aryl group. 2 Independently, R 2 is a methyl group or an ethyl group. n is an integer of 3 or more and 5 or less.

[0015] An underfill material according to one embodiment of the present application includes the resin composition and has a rheometer viscosity at 110° C. of 0.01 Pa·s to 1.0 Pa·s.

[0016] An overmold sealing material according to one embodiment of the present application includes the resin composition and has a rheometer viscosity at 110° C. of 1.0 Pa·s to 100 Pa·s.

[0017] A semiconductor device according to one embodiment of the present application includes a substrate, an electronic component mounted on the substrate, and an underfill sealing portion that fills and seals a gap between the substrate and the electronic component, wherein the underfill sealing portion is formed of a cured product of the underfill material.

[0018] A semiconductor device according to one embodiment of the present application includes a substrate, an electronic component mounted on the substrate, and an overmold sealing portion that seals the electronic component so as to cover the electronic component, wherein the overmold sealing portion is formed of a cured product of the overmold sealing material according to claim 7 .

[0019] A sheet-like insulating material according to one embodiment of the present application comprises a resin layer comprising the resin composition or a semi-cured product of the resin composition, and a support film superimposed on the resin layer. The melt viscosity of the resin layer at 110° C. is 100 Pa·s or more and 1000 Pa·s or less.

[0020] A metal-clad laminate according to one embodiment of the present application includes an insulating layer formed of a cured product of the resin composition, and a metal foil superimposed on the insulating layer.

[0021] A circuit board according to one embodiment of the present application includes an insulating layer formed of a cured product of the resin composition, and a conductive pattern formed on the insulating layer.

[0022] A multilayer substrate described in one embodiment of the present application comprises: a first insulating layer; a first conductor pattern formed on the aforementioned first insulating layer; a second insulating layer comprising a cured product of the aforementioned resin composition and overlapping the surface of the aforementioned first insulating layer on which the aforementioned first conductor pattern is formed; and a metal layer overlapping the aforementioned second insulating layer.

[0023] A multilayer circuit substrate described in one embodiment of the present application comprises: a first insulating layer; a first conductor pattern formed on the aforementioned first insulating layer; a second insulating layer comprising a cured product of the aforementioned resin composition and overlapping the surface of the aforementioned first insulating layer on which the aforementioned first conductor pattern is formed; and a second conductor pattern formed on the aforementioned second insulating layer.

[0024] The present invention provides a resin composition that achieves both low viscosity during molding and high physical strength of the cured product despite the use of nanometer-scale fine inorganic fillers. Furthermore, the present invention provides an underfill material, an overmolding sealing material, a semiconductor device, a metal-clad laminate, a circuit board, a multilayer substrate, and a multilayer circuit board manufactured using the resin composition. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 This is a schematic cross-sectional view showing an example of a semiconductor device according to one embodiment of the present invention.

[0026] Figure 2 This is a schematic cross-sectional view showing an example of a sheet-shaped insulating material in one embodiment of the present invention.

[0027] Figure 3 This is a schematic cross-sectional view showing an example of a metal-clad laminate according to one embodiment of the present invention.

[0028] Figure 4 This is a schematic cross-sectional view showing an example of a circuit board in one embodiment of the present invention.

[0029] Figure 5 This is a schematic cross-sectional view showing an example of a multi-layer metal-clad laminate according to one embodiment of the present invention.

[0030] Figure 6 This is a schematic cross-sectional view showing an example of a multilayer circuit board in one embodiment of the present invention. DETAILED DESCRIPTION

[0031] According to the inventors' findings, the inventions described in Patent Documents 1 and 2 are effective in achieving both low viscosity of the resin composition and high physical strength of the cured product when using fillers with larger particle sizes. However, there is a limit to the content of such fillers, making it difficult to further improve physical strength. While the content can be increased by using fine fillers with an average particle size on the order of nanometers, this tends to increase the melt viscosity of the resin composition during molding, making it difficult to achieve a high degree of balance between low viscosity of the resin composition and physical strength of the cured product.

[0032] The present application is made to solve the above-mentioned problems, and provides a resin composition and its use that can achieve both low viscosity and high physical strength of a cured product even when using a nanometer-level fine filler.

[0033] [Resin composition]

[0034] The resin composition (X) in this embodiment contains a thermosetting resin component (A) and an inorganic filler (B). The particle size of the inorganic filler (B) is such that the particle size (D50) at which the cumulative value in the particle size distribution measurement is 50% is less than 1 μm, and the particle size (D99) at which the cumulative value in the particle size distribution measurement is 99% is less than 5 μm. In addition, a portion or all of the surface of the inorganic filler (B) is surface-treated with a cyclic silane compound (C) represented by the following formula (1).

[0035]

Chemical Formula 1

[0036] Formula (1):

[0037]

[0038] (R in formula (1) 1 is an aryl group. 2 Independently, R 2 is a methyl group or an ethyl group. n is an integer of 3 or more and 5 or less.

[0039] <Thermosetting resin component>

[0040] The thermosetting resin component (A) comprises at least one thermosetting resin. The type of the thermosetting resin is not particularly limited, and examples thereof include epoxy resins, phenolic resins, benzoxazine resins, modified polyphenylene ethers, and maleimide resins. One or more selected from these can be used in combination.

[0041] When an epoxy resin is used as the thermosetting resin, examples of the epoxy resin include bisphenol-type epoxy resins such as bisphenol A epoxy resin, bisphenol F epoxy resin, and bisphenol S epoxy resin; biphenyl-type epoxy resins having a biphenyl skeleton; naphthalene-ring-containing epoxy resins, alicyclic epoxy resins, dicyclopentadiene-type epoxy resins having a dicyclopentadiene skeleton; cresol novolac-type epoxy resins such as phenol novolac-type epoxy resins and O-cresol novolac-type epoxy resins; triphenylmethane-type epoxy resins; and bromine-containing epoxy resins. The epoxy resins listed above may be used alone or in combination of two or more.

[0042] The epoxy equivalent of the epoxy resin is not particularly limited, but is preferably, for example, 50 g / eq or more and 10,000 g / eq or less, and more preferably 90 g / eq or more and 430 g / eq or less.

[0043] When a maleimide resin is used as the thermosetting resin, examples thereof include monomaleimide resins having one maleimide group, bismaleimide resins having two maleimide groups, and polyfunctional maleimide resins having more than two maleimide groups. Specific examples of maleimide resins include aromatic maleimides, aliphatic maleimides, and alicyclic maleimides. More specifically, 4,4′-diphenylmethanebismaleimide and m-phenylenebismaleimide are examples. The maleimide resins listed above may be used alone or in combination of two or more.

[0044] The thermosetting resin component (A) may contain a curing agent and a curing accelerator as needed. The curing agent and the curing accelerator can be appropriately selected according to the type of the aforementioned thermosetting resin. For example, when an epoxy resin is used as the aforementioned thermosetting resin, as a curing agent, phenolic curing agents such as phenol novolac resins; amine curing agents such as diaminodiphenylmethanes and m-phenylenediamines; acid anhydride curing agents such as hexahydrophthalic anhydride, tetrahydrophthalic anhydride, and pyromellitic anhydride, etc. can be exemplified. The curing agents exemplified above can be used alone or in combination of two or more. In addition, as a curing accelerator, when an epoxy resin is used as the aforementioned thermosetting resin, for example, imidazole compounds, tertiary amine compounds, organic phosphine compounds, etc. can be exemplified.

[0045] When a bismaleimide resin is used as the thermosetting resin, examples of the curing agent include styrene compounds, aliphatic vinyl compounds, acrylic compounds, isocyanate compounds, etc. Curing catalysts such as organic peroxides and organometallic complexes may also be used.

[0046] <Inorganic filler·Cyclic silane compound>

[0047] The inorganic filler (B) is obtained by surface-treating a portion or the entire surface of an inorganic filler that has not been surface-treated with a cyclic silane compound (C).

[0048] The inorganic filler (B) is a filler of so-called nanometer size, and its particle size is such that the particle size (D50) at which the cumulative value in the particle size distribution measurement based on the laser scattering / diffraction method is 50% is less than 1 μm, and the particle size (D99) at which the cumulative value in the particle size distribution measurement based on the laser scattering / diffraction method is 99% is less than 5 μm.

[0049] The particle size of the inorganic filler (B) is preferably finer. Specifically, the value of D50 is preferably less than 800nm, more preferably less than 300nm. The lower limit is not particularly limited, for example, the value of D50 is more than 10nm. If the particle size of the inorganic filler (B) is within the above range, the content of the inorganic filler (B) in the resin combination (X) can be suitably increased. Therefore, it is effective for further reducing the linear expansion coefficient of the cured product of the resin combination (X), and the fillability of the narrow portion between the chip and the package is improved.

[0050] The shape of the inorganic filler (B) is not particularly limited, but is preferably spherical. When the inorganic filler (B) is spherical, the fluidity of the resin composition is improved, and aggregation of the inorganic filler can be suppressed. In addition, a spherical inorganic filler can be used alone, or inorganic fillers of different shapes can be used in combination.

[0051] The type of inorganic filler (B) is not particularly limited as long as the cyclic silane compound (C) described later undergoes a coupling reaction with its surface and can be surface-treated. Examples thereof include silicon dioxide, aluminum oxide, silicon nitride, aluminum nitride, boron nitride, titanium oxide, glass, zinc oxide, talc, and calcium carbide. Among these, silicon dioxide is particularly preferably included. These can be used alone or in combination of two or more.

[0052] The inorganic filler (B) is obtained by surface-treating an untreated inorganic filler with a cyclic silane compound (C). The cyclic silane compound (C) is an organosilicon compound represented by the following formula (1). In this embodiment, the cyclic silane compound (C) is used as a silane coupling agent, etc., for surface-treating the inorganic filler (B).

[0053]

Chemical Formula 2

[0054] Formula (1):

[0055]

[0056] R in formula (1) 1is an aryl group. Examples of the aryl group include aromatic hydrocarbon groups such as phenyl, naphthyl, biphenyl, phenanthrenyl, anthracenyl, terphenyl, pyrenyl, fluorenyl, and perylenyl. 1 Preferably, phenyl. If it is such a substituent, it is effective for the low viscosity of the melt viscosity when the resin composition (X) is molded, and the physical strength of the cured product can also be improved. The hydrogen atoms on the aromatic ring are optionally substituted by other substituents. As a substituent, as long as it is a substituent that does not damage the effect of the present embodiment, it is not particularly limited, and is preferably an alkyl or alkoxy group.

[0057] OR in formula (1) 2 Independently, R 2 is methyl or ethyl. 2 A methyl group is preferred. With such a substituent, the cyclic silane compound (C) can react rapidly with the untreated inorganic filler to obtain the inorganic filler (B).

[0058] n in formula (1) is an integer in the range of 3 to 5. That is, the cyclic silane compound (C) is preferably an organosilicon compound represented by the following formula (2).

[0059]

Chemical Formula 3

[0060] Formula (2):

[0061]

[0062] In formula (2), n is an integer of 3 or more and 5 or less, preferably 3 or 4, and more preferably 3.

[0063] Specific examples of the cyclic silane compound (C) include 2-ethoxy-2-methoxy-1-phenyl-1-aza-2-silacyclopentane, 2,2-diethoxy-1-phenyl-1-aza-2-silacyclopentane, 2,2-dimethoxy-1-phenyl-1-aza-2-silacyclopentane, 2,2-dimethoxy-1-phenyl-1-aza-2-silacyclohexane, and 2,2-dimethoxy-1-phenyl-1-aza-2-silacycloheptane. Preferred examples include 2,2-dimethoxy-1-phenyl-1-aza-2-silacyclopentane, 2,2-dimethoxy-1-phenyl-1-aza-2-silacyclohexane, and 2,2-dimethoxy-1-phenyl-1-aza-2-silacycloheptane. More preferred examples include 2,2-dimethoxy-1-phenyl-1-aza-2-silacyclopentane.

[0064] As the cyclic silane compound (C), the compounds exemplified above can be used alone or in combination of two or more. In addition, within the scope of not damaging the effect of the present embodiment, a general silane coupling agent different from the cyclic silane compound (C) can be used in combination. In addition, the silane coupling agent used in combination is not particularly limited.

[0065] Cyclic silane compound (C) is compared with the organosilane compound used as silane coupling agent all the time, and is difficult for inorganic filler to gather each other in surface treatment process.Therefore, the viscosity of the resin combination comprising cyclic silane compound (C) is downgraded.In addition, the close force of cured product and substrate, metal foil etc. improves, and has high physical strength.It should be noted that the substrate herein is package substrate, motherboard etc.

[0066] It can be considered that this effect is because the reaction mechanism when the cyclic silane compound (C) reacts with the inorganic filler is different from that of conventional silane coupling agents. For example, when using N-phenyl-3-aminopropyl trimethoxysilane and silicon dioxide, which have always been used as silane coupling agents, initially, all methoxy groups of N-phenyl-3-aminopropyl trimethoxysilane are replaced with hydroxyl groups OH to generate silanol groups. This is because hydrolysis is carried out at the bond between the Si atom and the methoxy group. Thereafter, by heating, a dehydration condensation reaction of a part of the silanol groups generated by hydrolysis and the silanol groups present on the silicon dioxide surface is carried out. Through this reaction, N-phenyl-3-aminopropyl trimethoxysilane is bonded to silicon dioxide. However, while this reaction is taking place, a side reaction is also carried out. The main side reaction is a dehydration condensation reaction between the three hydroxyl groups generated by hydrolysis in N-phenyl-3-aminopropyltrimethoxysilane and the remaining silanol groups that are not bonded to the silica surface, that is, between the N-phenyl-3-aminopropyltrimethoxysilane groups. This side reaction causes the N-phenyl-3-aminopropyltrimethoxysilane groups to bond with each other, forming bridges between the inorganic fillers. It is believed that this reaction causes aggregation.

[0067] On the other hand, when using cyclic silane compound (C) to carry out the surface treatment of silica, initially, the S-iN bond of cyclic silane compound (C) is broken, and Si is bonded to the silanol group present on the surface of inorganic filler by direct reaction. The reaction is fast compared with the reaction of the silanol group present on the silica surface through hydrolysis reaction with organosilane compounds such as N-phenyl-3-aminopropyltrimethoxysilane. Thereafter, by carrying out heat treatment, the residue of the cyclic silane compound (C) locally bonded to the silica surface, i.e., alkoxysilyl group reacts with the silanol group remaining on the silica surface and bonds.

[0068] In this reaction mechanism, alkoxysilane does not undergo hydrolysis to be replaced by silanol groups, so the cyclic silane compounds (C) do not react with each other and are less likely to form bridges between inorganic fillers.

[0069] Due to this difference in reaction mechanism, the viscosity of the resin composition in this embodiment is reduced. In addition, the cured product has improved adhesion to substrates, metal foils, etc., and has high physical strength.

[0070] Examples of the method for performing the surface treatment include a bulk blending method in which the resin composition (X) is subjected to surface treatment and a direct treatment method in which the surface treatment is performed in advance before mixing the components.

[0071] When the overall blending method is employed, a thermosetting resin component (A), an untreated inorganic filler, and a cyclic silane compound (C) are mixed to prepare a resin composition (X). In this case, a surface treatment reaction of the untreated inorganic filler with the cyclic silane compound (C) occurs in the resin composition (X), thereby producing a surface-treated inorganic filler (B).

[0072] When the inorganic filler (B) is obtained by the direct treatment method, the inorganic filler (B) that has been surface-treated with the cyclic silane compound (C) is prepared before preparing the resin composition (X). The thermosetting resin component (A) and the inorganic filler (B) are then mixed to prepare the resin composition (X).

[0073] When using a direct treatment method for surface treatment, an existing well-known method can be adopted. For example, a treatment agent containing a cyclic silane compound (C) can be sprayed on the inorganic filler to make it contact uniformly. As the above-mentioned treatment agent, if the cyclic silane compound (C) is in liquid form, its original solution can be used directly, or a solvent can be added to make a dilute solution adjusted to the desired concentration for use. When using a treatment agent made into a dilute solution, the concentration of the cyclic silane compound (C) contained in the treatment agent is not particularly limited as long as it can surface treat the inorganic filler (B), preferably 80% by mass or more, more preferably 90% by mass or more. As a solvent, there is no particular limitation, and examples include water; alcohol solvents such as methanol and ethanol; hydrocarbon solvents such as hexane, cyclohexane, toluene, and xylene; ketone solvents such as acetone and methyl ethyl ketone; ester solvents such as ethyl acetate and butyl acetate; aprotic polar solvents such as acetonitrile and N,N-dimethylformamide, etc., preferably water and alcohol solvents. It should be noted that the overall blending method and the direct treatment method can be combined.

[0074] The content of the inorganic filler (B) in the resin composition (X) is preferably 100 parts by mass or more and 500 parts by mass or less, and more preferably 150 parts by mass or more and 300 parts by mass or less, per 100 parts by mass of the thermosetting resin component (A). When the content of the inorganic filler (B) is within the above range, the cured product of the resin composition has high physical strength.

[0075] The amount of the cyclic silane compound (C) used for surface treatment of inorganic filler (B) is different because of the method for surface treatment, for example, if it is an overall blending method, then relative to 100 mass parts of inorganic filler (B), preferably more than 0.1 mass part and less than 10 mass parts, more preferably more than 0.5 mass part and less than 5 mass parts. In the case where the content of cyclic silane compound (C) is less than 0.1 mass part, cyclic silane compound (C) is insufficient, and untreated or poorly treated inorganic filler remains in resin combination (X), therefore, the effect of the present invention cannot be fully obtained. On the other hand, in the case where the content of cyclic silane compound (C) is more than 10 mass parts, it becomes too much amount for uniformly treating the inorganic filler surface, therefore, in resin combination (X), there is unreacted and free cyclic silane compound (C), it is possible to cause the melt viscosity during molding to rise, the generation of gelation.

[0076] <Additives>

[0077] The resin composition (X) may contain additives such as flame retardants, pigments, reactive diluents, leveling agents, and defoaming agents, as long as the effects of the present embodiment are not impaired. Furthermore, the resin composition (X) may be used in a varnish form by adding a solvent as needed.

[0078] [Application of resin composition]

[0079] The purpose of the resin composition (X) described in the present embodiment is not limited, and is particularly useful in the technical applications in the field of electronic materials. Examples of materials for semiconductor devices such as bottom filling materials and overmolding sealing materials and semiconductor devices using the same can be listed; Sheet-shaped insulating materials; and Metal-clad laminates, circuit substrates, multi-layer metal-clad laminates, and multi-layer circuit substrates comprising insulating layers formed using the resin composition (X). The resin composition (X) used in these applications can be prepared as follows: Various compounding components having thermosetting resin components (A) and inorganic fillers (B) as essential components are simultaneously compounded or separately compounded in a manner such that the components are heated and cooled as needed, and stirred, dissolved, mixed, and dispersed. A disperser, a planetary agitator, a ball mill, a three-roll mill, and the like can be used for the aforementioned stirring, dissolving, mixing, and dispersion.

[0080] In various applications, resin composition (X) is by using an inorganic filler (B) that has been surface-treated using a cyclic silane compound (C), so that it is possible to adjust the resin composition in a manner suitable for viscosity at a temperature during molding. Therefore, the cured product of the resin composition (X) can have high physical strength. It should be noted that physical strength refers to adhesion, flexural strength, etc. Various applications are described in sequence.

[0081] <Semiconductor Device>

[0082] An example of a semiconductor device obtained using the resin composition (X) of this embodiment is shown in FIG. Figure 1 . Figure 1 The semiconductor device 1 comprises: a substrate 2; an electronic component 4 mounted by means of bumps 3 arranged on the main surface of the substrate 2; an underfill sealing portion 11 that seals by filling a gap generated between the substrate 2 and the electronic component 4; and an overmolded sealing portion 12 that covers the surface of the electronic component 4 and seals.

[0083] The underfill sealing portion 11 is formed of an underfill material, and the overmold sealing portion 12 is molded using the overmold sealing material.

[0084] In the semiconductor device 1 according to this embodiment, the resin composition (X) is used as at least one of the underfill material and the overmolding sealing material. Figure 1 The semiconductor device 1 is an example in which the resin composition (X) is used in combination with the above-mentioned resin composition.

[0085] The above-mentioned bottom filling material can apply the above-mentioned resin composition (X). It is expected that the resin composition used as the bottom filling material has fluidity at room temperature (usually 25°C) and is in a paste or liquid state. Specifically, the viscosity at room temperature is preferably 1000 Pa·s or less, more preferably 100 Pa·s or less. The lower limit of the viscosity at room temperature is not particularly limited, for example, it is 1 Pa·s or more. The bottom filling material formed by the resin composition (X) having a viscosity within the above-mentioned range is in a paste or liquid state. In addition, from the viewpoint of obtaining good filling properties during molding, the lower the rheometer viscosity of the resin composition (X) used as the bottom filling material at 110°C, the more preferably, specifically, it is preferably 1.0 Pa·s or less, more preferably 0.3 Pa·s or less. The lower limit of the rheometer viscosity at 110°C is not particularly limited, for example, it is 0.01 Pa·s or more. In order to make the resin composition (X) fluid at room temperature, it is preferred that the thermosetting resin component (A) is in a liquid state at room temperature. For example, thermosetting resins such as bisphenol A epoxy resin and bisphenol F epoxy resin, which are liquid at room temperature, can be suitably used. These underfill materials have suitable fluidity for filling fine gaps, making it easy to fill the gap between substrate 2 and electronic component 4 with the underfill material, thereby preventing underfill. Consequently, a suitable underfill sealing portion 11 can be formed.

[0086] Furthermore, the underfill material exhibits a penetration depth of preferably 20 mm or greater, and more preferably 30 mm or greater, in an immersion test under conditions of 100°C and 40 μm between glass plates. This underfill material can fill fine gaps, easily filling the gap between substrate 2 and electronic component 4 and preventing unfilled areas. Therefore, using this underfill material enables the formation of a suitable underfill sealing portion 11.

[0087] The underfill sealing portion 11 is formed by filling the gap with the underfill material and then heating and curing the underfill material.

[0088] form Figure 1 The resin composition (X) can also be applied to the overmolded sealing material of the overmolded sealing portion 12. The rheometer viscosity of the resin composition as the overmolded sealing material at 110°C is generally in a wider range than the viscosity range of the bottom filling material, specifically, preferably 100 Pa·s or less, more preferably 40 Pa·s or less. The lower limit of the rheometer viscosity at 110°C is not particularly limited, for example, it is 10 Pa·s or more. By using this overmolded sealing material, a suitable overmolded sealing portion 12 covering the entire electronic component 4 and the bottom filling sealing portion 11 can be formed.

[0089] In a semiconductor device 1, electronic components 4, such as IC chips and LSI chips, are mounted on the mounting surface of a substrate 2 having a circuit pattern formed thereon via solder bumps 3. This creates an underfill sealing portion 11 between the substrate 2 and the electronic components 4. Furthermore, an overmold sealing portion 12 is formed by covering the surface of the electronic components 4 with an overmold sealing material and heating the overmold.

[0090] The heating conditions during molding are not particularly limited and may be appropriately changed depending on the compounding composition, etc. For example, the heating temperature is 120° C. to 170° C., and the heating time is 0.5 hour to 5 hours.

[0091] The bottom filling sealing portion 11 is composed of a cured product of the resin composition (X) described in the present embodiment, and therefore has high adhesion (initial adhesion) with the substrate 2 and the electronic component 4. In addition, it also has high adhesion (adhesion after PCT) after the pressure cooker test. Furthermore, the adhesion reduction rate when the initial adhesion is compared with the adhesion after PCT becomes lower. The higher the adhesion after PCT, the more preferred. Specifically, using a universal weld strength tester, when a load is applied to a pudding-shaped test piece along the shear direction at a test speed of 0.5mm / second to measure the shear adhesion strength (adhesion), it is preferably 0.12MPa or more, more preferably 14MPa or more. The lower the adhesion reduction rate, the more preferred, specifically, preferably 10% or less, more preferably 5% or less. The bottom filling sealing portion 11 that meets them has high adhesion with the substrate 2 and the electronic component 4.

[0092] About the overmolding sealing portion 12, by being constituted by the cured product of the resin composition (X) described in the present embodiment, thus having high adhesion (initial adhesion) with the substrate 2 and the electronic component 4. In addition, it also has high adhesion (adhesion after PCT) after the PCT test. And then, the adhesion reduction rate when comparing the initial adhesion with the adhesion after PCT becomes low. The higher the adhesion after PCT, the more preferred. Specifically, using a universal weld strength tester, when a load is applied to a pudding-shaped test piece along the shear direction at a test speed of 0.5mm / second to carry out the measurement of shear adhesion strength (adhesion), it is preferably 12MPa or more, more preferably 14MPa or more. The lower the adhesion reduction rate, the more preferred, specifically, preferably 40% or less, more preferably 30% or less. The overmolding sealing portion 12 that meets them has high adhesion with the substrate 2 and the electronic component 4.

[0093] <Sheet insulation material>

[0094] The sheet-like insulating material 21 of this embodiment is as follows Figure 2 As shown, the resin layer 22 and the support film 23 stacked on the resin layer 22 are provided.

[0095] The resin layer 22 is a layer containing the above-mentioned resin composition (X) or a semi-cured product thereof.

[0096] From the perspective of molding under pressure, the melt viscosity of the resin composition (X) contained in the resin layer 22 at 110°C is generally in a larger range than the viscosity range of the overmolding sealing material, specifically, preferably 1000 Pa·s or less, more preferably 300 Pa·s or less. The lower limit of the melt viscosity at 110°C is not particularly limited, for example, it is 100 Pa·s or more. By using the above-mentioned resin composition (X), the molding pressure required when manufacturing metal-clad laminates, etc. can be reduced. In addition, relative to the pressurizing capacity of the press, the area of ​​the moldable sheet-like insulating material 21 can be increased.

[0097] The thickness of the resin layer 22 is not particularly limited; specifically, it is preferably 5 μm or more and 500 μm or less. If the thickness of the resin layer 22 is 5 μm or less, the thickness of the sheet-like insulating material 21 is too thin. Therefore, when used in metal-clad laminates 31 or multilayer metal-clad laminates 51, the insulation properties become insufficient, making it undesirable for practical use. Furthermore, if the thickness is 500 μm or more, unevenness tends to occur during the formation of the resin layer 22, making it difficult to form a uniform resin layer 22.

[0098] The support film 23 is not particularly limited as long as it is a peelable film, and specific examples thereof include PET films.

[0099] The method for producing the sheet-like insulating material 21 is not particularly limited. Specifically, the sheet-like insulating material 21 can be obtained by applying a varnish-like resin composition (X) onto a support film 23, and forming a resin layer 22 on the support film 23. Furthermore, to facilitate application, a solvent may be added to the resin composition (X) as needed to adjust the viscosity of the resin composition (X). When a solvent is added, after applying the resin composition (X) onto the support film 23, the solvent can be removed by heating and drying the resin composition (X) in a relatively low temperature range where the resin composition (X) does not solidify.

[0100] The method of coating the resin composition on the support film 23 is not particularly limited as long as the resin layer 22 can be formed. Specific examples include a comma direct coating method and the like.

[0101] The sheet-shaped insulating material 21 can be used as a material constituting the insulating layer of the metal-clad laminate 31 or the circuit board 41 .

[0102] <Metal-clad laminate>

[0103] The metal-clad laminate 31 according to this embodiment is as follows Figure 3 As shown, an insulating layer 32 and a metal foil 33 overlapping the insulating layer 32 are provided.

[0104] The insulating layer 32 is a layer containing a cured product of the resin composition (X). The metal foil 33 is not particularly limited as long as it is a metal foil generally used for metal-clad laminates, and examples thereof include copper foil.

[0105] In addition, if Figure 3 As shown, the metal foil 33 may be provided on only one side of the insulating layer 32 , or may be provided on both sides.

[0106] The thickness of the metal-clad laminate is not particularly limited, but is preferably 20 μm or more and 400 μm or less.

[0107] The method for producing the metal-clad laminate 31 is not particularly limited. For example, a metal foil 33 is laminated on the resin layer 22 of the sheet-like insulating material 21. Heat and pressure molding is performed in this state to obtain a single-sided metal-clad laminate 31. Alternatively, the resin layer 22 can be peeled off from the support film 23, and the resin layer of the sheet-like insulating material 21 can be laminated according to the same method as needed. The support film 23 can be peeled off from the outermost resin layer 22, and heat and pressure molding can be performed while the metal foil 33 is laminated to obtain a double-sided metal-clad laminate.

[0108] The conditions for heat and pressure molding are preferably modified appropriately depending on the thickness of the metal-clad laminate 31 being manufactured, and the components and thickness of the sheet-like insulating material 21. For example, the heating temperature is 100°C to 200°C, the heating time is 1 hour to 5 hours, and the pressure is 1.5 to 4.0 MPa. The temperature can be varied during heating. Furthermore, after heating under pressure for 10 minutes to 2 hours, the remaining heating can be performed in an oven or the like without pressure.

[0109] <Circuit Board>

[0110] The circuit substrate 41 in this embodiment is as follows Figure 4 As shown, an insulating layer 42 and a conductive pattern 43 formed on the insulating layer 42 are provided.

[0111] The insulating layer 42 is a layer comprising a cured product of the resin composition (X). The conductive pattern 43 is not particularly limited in its formation method as long as it can be formed on the insulating layer 42. Examples of such methods include etching the metal foil 33. Specifically, etching the metal foil 33 of the metal-clad laminate 31 partially removes the metal foil 33 on its surface, thereby obtaining a circuit board 41 having the desired conductive pattern 43.

[0112] <Multi-layer Metal-clad Laminated Plate>

[0113] The multi-layer metal-clad laminate 51 according to this embodiment is as follows Figure 5 As shown, the core substrate 54 includes a first insulating layer 52 and a conductive pattern 53 formed on the first insulating layer; a second insulating layer 56 overlapping the surface of the first insulating layer 52 on which the conductive pattern 53 is formed; and a metal foil 57 overlapping the second insulating layer. The core substrate 54 includes the first insulating layer 52 and the conductive pattern 53 formed on the first insulating layer.

[0114] The first insulating layer 52 is a layer containing a cured product of the resin composition (X). The conductive pattern 53 is not particularly limited as long as it is formed by processing a general metal foil. As the core substrate 54, the circuit substrate 41 described in this embodiment can be used.

[0115] Furthermore, the core substrate 54 may include a plurality of insulating layers and conductor patterns. Specifically, the conductor patterns and insulating layers may be alternately stacked on the surface of the first insulating layer 52 where the conductor patterns are not formed.

[0116] Second insulating layer 56 is an electrically insulating layer comprising a cured product of a thermosetting resin composition. Thermosetting resin compositions are not particularly limited and may include common thermosetting resins such as epoxy resins and maleimide resins, and common fillers such as silica. Furthermore, the thermosetting resin composition included in second insulating layer 56 may include resin composition (X), similar to first insulating layer 52. Metal foil 57 is the same as metal foil 33.

[0117] The method for manufacturing the multi-layer metal-clad laminate is not particularly limited. For example, the resin layer 22 in the sheet-like insulating material 21 is peeled off from the support film 23. The surface of the first insulating layer 52 on which the first conductor pattern 63 is formed is superimposed on the main surface of the resin layer 22. The metal foil 57 is superimposed on the surface opposite the main surface of the resin layer 22. Thereafter, the resin layer 22 is cured by applying pressure and heating in the thickness direction, thereby forming the second insulating layer 56 and obtaining the multi-layer metal-clad laminate 51.

[0118] The method for manufacturing the multilayer metal-clad laminate 51 is not particularly limited. For example, the core substrate 54 is laminated on the resin layer 22 of the sheet-like insulating material 21. Heat and pressure molding is performed in this state to obtain the multilayer metal-clad laminate 51. Alternatively, the resin layer 22 is peeled off from the support film 23, and the resin layer of the sheet-like insulating material 21 is laminated according to the same method as needed. The support film 23 is peeled off from the outermost resin layer 22, and heat and pressure molding is performed in a state in which the core substrate 54 is laminated.

[0119] Regarding the heating temperature, for example, the heating temperature is 100°C to 200°C, the heating time is 1 hour to 5 hours, and the pressure is 1.5 to 4.0 MPa. It should be noted that the temperature can be changed during heating. Furthermore, after heating under pressure for 10 minutes to 2 hours, the remaining heating can be performed in an oven or the like without pressure.

[0120] <Multilayer Circuit Board>

[0121] The multilayer circuit substrate 61 of this embodiment is as follows Figure 6 As shown, the core substrate 64 includes a first insulating layer 62, a core substrate 64 having a first conductor pattern 63 formed on the first insulating layer, a second insulating layer 66 superimposed on the surface of the first insulating layer 62 on which the first conductor pattern is formed, and a second conductor pattern 67 formed on the second insulating layer. The core substrate 64 is the same as the core substrate 54 described above.

[0122] The second conductor pattern 67 can be formed by any method without particular limitation, as long as the conductor pattern can be formed on the first insulating layer 62. Examples of methods include etching the metal foil 57. Specifically, by etching the metal foil 57 of the multi-layer metal-clad laminate 51, portions of the metal foil 57 on the surface can be removed, resulting in a multi-layer circuit board 61 having the desired second conductor pattern 67.

[0123] The metal-clad laminate 31, circuit board 41, multilayer metal-clad laminate 51, and multilayer circuit board 61, each including an insulating layer containing a cured product of the resin composition of the present invention, exhibit high flexural strength (initial flexural strength). Furthermore, they exhibit high flexural strength even after a pressure cooker test (post-PCT flexural strength). Furthermore, the rate of decrease in flexural strength when comparing initial flexural strength with post-PCT flexural strength is low.

[0124] The higher the post-PCT bending strength and the lower the bending strength reduction rate, the higher the reliability under high temperature and high humidity conditions, and the better the device strength and insulation properties of the insulation layer. Specifically, when measured using an Autograph under conditions of a thickness of 1.5 mm, a width of 20 mm, a support distance of 24 mm, and a load cell lowering speed of 1 mm / minute, the post-PCT bending strength is preferably 80 MPa or higher, and more preferably 120 MPa or higher. Furthermore, the bending strength reduction rate is preferably 40% or lower, and more preferably 30% or lower. Metal-clad laminates 31, circuit boards 41, multilayer metal-clad laminates 51, and multilayer circuit boards 61 having such an insulation layer have high bending strength.

[0125] [Way]

[0126] According to the above embodiment, it can be clearly seen that the resin composition described in the first embodiment of the present application contains a thermosetting resin component (A) and an inorganic filler (B), and the inorganic filler (B) is obtained by surface-treating a surface-untreated inorganic filler having a particle size (D50) of less than 1 μm when the cumulative value in the particle size distribution measurement is 50% and a particle size (D99) of less than 5 μm when the cumulative value in the particle size distribution measurement is 99%, using a cyclic silane compound (C) represented by formula (1), and the content of the aforementioned inorganic filler (B) is 100 parts by mass or more and 500 parts by mass or less relative to 100 parts by mass of the aforementioned thermosetting resin component (A).

[0127] The resin composition according to the first embodiment contains a large amount of nanometer-level fine inorganic filler (B). Since the inorganic filler (B) is surface-treated with the cyclic silane compound (C), it is possible to achieve low viscosity in a molten state during molding while also achieving high physical strength.

[0128] The resin composition according to the second aspect of the present application is configured such that, in the first aspect, the thermosetting resin component (A) contains an epoxy resin.

[0129] The resin composition according to the third embodiment of the present application, in any one of the first embodiment or the second embodiment, contains R in the above formula (1) 1 A cyclic silane compound containing an aromatic group.

[0130] The resin composition according to the fourth aspect of the present application, in any one of the first to third aspects, is characterized in that the particle size of the inorganic filler (B) is 300 nm or less when the cumulative value (D50) in particle size distribution measurement is 50%.

[0131] The resin composition according to the fifth aspect of the present application is any one of the first to fourth aspects, wherein the inorganic filler (B) contains silica.

[0132] The underfill material according to a sixth aspect of the present application includes the resin composition according to any one of the first to fifth aspects, and has a rheometer viscosity at 110° C. of 0.01 Pa·s to 1.0 Pa·s.

[0133] According to the sixth aspect, the underfill material has fluidity suitable for filling fine gaps, and the cured product has high adhesion.

[0134] The overmold sealing material according to a seventh aspect of the present application comprises the resin composition according to any one of the first to fifth aspects, and has a rheometer viscosity at 110° C. of 1.0 Pa·s to 100 Pa·s.

[0135] According to the seventh aspect, the overmold sealing material has excellent fluidity during molding, and thus can suitably realize overmold sealing of electronic components and the like, and the cured product has high adhesion.

[0136] The semiconductor device described in the eighth embodiment of the present application comprises: a substrate, an electronic component mounted on the aforementioned substrate, and an underfill sealing portion that seals by filling a gap between the aforementioned substrate and the aforementioned electronic component, wherein the underfill sealing portion is formed of a cured product of the underfill material of the sixth embodiment.

[0137] A semiconductor device according to a ninth aspect of the present application includes a substrate, an electronic component mounted on the substrate, and an overmold sealing portion that seals the electronic component so as to cover the electronic component, wherein the overmold sealing portion is formed of a cured product of the overmold sealing material according to the seventh aspect.

[0138] The sheet-like insulating material according to the tenth aspect of the present application comprises a resin layer and a support film superimposed on the resin layer, wherein the resin layer comprises the resin composition according to any one of the first to fifth aspects or a semi-cured product of the resin composition, and has a melt viscosity at 110° C. of 100 Pa·s or more and 1000 Pa·s or less.

[0139] The metal-clad laminate according to the eleventh aspect of the present application includes an insulating layer and a metal foil superimposed on the insulating layer, wherein the insulating layer includes a cured product of the resin composition according to any one of the first to fifth aspects.

[0140] A circuit board according to a twelfth aspect of the present application includes an insulating layer and a conductive pattern formed on the insulating layer, wherein the insulating layer includes a cured product of the resin composition according to any one of the first to fifth aspects.

[0141] The multilayer metal-clad laminate described in the thirteenth embodiment of the present application comprises: a first insulating layer; a first conductor pattern formed on the aforementioned first insulating layer; a second insulating layer comprising a cured product of a resin composition of any one of the first to fifth embodiments and overlapping on the surface of the aforementioned first insulating layer on which the aforementioned first conductor pattern is formed; and a metal layer overlapping the aforementioned second insulating layer.

[0142] Regarding the multilayer circuit substrate described in the fourteenth embodiment of the present application, it comprises: a first insulating layer; a first conductor pattern formed on the aforementioned first insulating layer; a second insulating layer that is a cured product of a resin composition of any one of the first to fifth embodiments and overlaps on the surface of the aforementioned first insulating layer on which the aforementioned first conductor pattern is formed; and a second conductor pattern formed on the aforementioned second insulating layer.

[0143] Example

[0144] Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited to these Examples.

[0145] The raw materials listed in Tables 1 to 3, excluding the curing agent and the curing accelerator, were blended at the listed ratios and mixed using a planetary mixer and a three-roll mill in this order.

[0146] Next, a curing agent and a curing accelerator are added to the mixture, and the mixture is stirred and mixed again using a planetary mixer to produce a liquid resin composition.

[0147] Thermosetting resin component (A)

[0148] Epoxy resin 1 (manufactured by Nippon Steel Chemicals & Materials Co., Ltd., trade name "YDF-8170C", epoxy equivalent: 160 g / eq)

[0149] Epoxy resin 2 (manufactured by DIC Corporation, trade name "HP-4032D", epoxy equivalent: 420 g / eq)

[0150] Epoxy resin 3 (manufactured by Nippon Steel Chemicals & Materials Co., Ltd., trade name "YD-8125", epoxy equivalent: 173 g / eq)

[0151] Epoxy resin 4 (manufactured by Nippon Kayaku Co., Ltd., trade name "NC-3000", epoxy equivalent: 285 g / eq)

[0152] Epoxy resin 5 (manufactured by Printec, trade name "VG-3101L", epoxy equivalent: 210 g / eq)

[0153] Inorganic filler (B)

[0154] Inorganic filler 1 (manufactured by Tokuyama Co., Ltd., trade name "SS-07", D50: 0.7 μm, D99: 1.7 μm)

[0155] Inorganic filler 2 (manufactured by Tokuyama Co., Ltd., trade name "SS-01", D50: 0.1 μm, D99: 1.0 μm)

[0156] Inorganic filler 3 (manufactured by DENKA Corporation, trade name "SFP-130MC", D50: 0.8 μm, D99: 4.1 μm)

[0157] Inorganic filler 4 (out of range) (manufactured by DENKA Corporation, trade name "FB-1MDX", D50: 2.6 μm, D99: 7.6 μm)

[0158] Inorganic filler 5 (out of range) (manufactured by DENKA Corporation, trade name "FB5SDX", D50: 5.0 μm, 39.0 μm)

[0159] coupling agent

[0160] Cyclic silane compound (C) (manufactured by Shin-Etsu Industries, Ltd., trade name "X-88-398")

[0161] Coupling agent 1 (manufactured by Shin-Etsu Chemical Co., Ltd., trade name "KBM-573")

[0162] Coupling agent 2 (manufactured by Shin-Etsu Chemical Co., Ltd., trade name "KBM-403")

[0163] Coupling agent 3 (Momentive Performance Materials, trade name "A-1100")

[0164] curing agent

[0165] Aromatic amine (manufactured by Nippon Kayaku Co., Ltd., trade name "KAYARAD AA")

[0166] curing accelerator

[0167] Imidazole (Shikoku Chemical Co., Ltd., trade name "2E4MZ")

[0168] Dispersant (BYK-W-9077, manufactured by BYK-Chemie Japan Co., Ltd.)

[0169] Pigment (manufactured by Mitsubishi Chemical Corporation, trade name "MA100")

[0170] solvent

[0171] Solvent 1 (Methyl ethyl ketone, manufactured by DAISOCHEMICAL)

[0172] Solvent 2 (Mitsubishi Gas Chemical Co., Ltd., N,N-dimethylformamide)

[0173] Rheometer Viscosity

[0174] The resin compositions prepared in Examples 1 to 3 and Comparative Examples 1 to 7 were heated from 30°C to 120°C using a rheometer (manufactured by TAINSTRUMENTS, model: "DISCOVERY HR-2") at a rotation speed of 5 rpm and a heating rate of 20°C / min. The viscosity at 110°C was recorded.

[0175] 〈Flow Tester Viscosity〉

[0176] Regarding the viscosity of the resin compositions prepared in Examples 4 to 5 and Comparative Example 9 at 110°C, a flow tester (CFT-100D, manufactured by Shimadzu Corporation) was used to measure the minimum viscosity when the resin compositions were passed through a capillary with L / D = 10 / φ1 under a load of 980N.

[0177] Immersion test

[0178] Two sheets of glass previously plasma-cleaned were stacked with a gap of 40 μm, heated to 80° C., and subjected to an immersion test. The flow distance was measured 10 minutes after the start of the measurement.

[0179] In addition, the appearance of the impregnated resin composition was evaluated according to the following criteria.

[0180] ○: No flow marks (uneven streaks)

[0181] ×: Flow marks (uneven streaks)

[0182] 〈Evaluation of tightness〉

[0183] The resin compositions of Example 1 and Comparative Examples 1 to 4 were injection molded using a Teflon (registered trademark, the same applies hereinafter) mold to form a pudding-shaped cured product having a bonding diameter of 8 mmφ and a molded product height of 5 mm on a pure copper plate. Furthermore, the cured product was cured at 100°C / 1 hour followed by 150°C / 1 hour. The shear bond strength (initial bond strength) of the pudding-shaped test piece formed on the copper plate was measured using a universal weld strength tester with a load applied in the shear direction at a test speed of 0.5 mm / second.

[0184] Furthermore, a pressure cooker test (PCT test) was performed under conditions of a temperature of 130° C. and a humidity of 85% for 48 hours to measure the shear adhesion strength (post-PCT adhesion).

[0185] For the resin compositions of Example 2, Example 3 and Comparative Examples 5 to 8 prepared, a pudding-shaped cured product with a bonding diameter of 8 mmφ and a molded product height of 5 mm was formed on a silicon chip by injection molding using a Teflon mold. Furthermore, the cured product was cured under the conditions of 100°C / 1 hour + 150°C / 1 hour to form a test piece of the cured product on a silicon chip. Using a universal welding strength tester, a load was applied to the pudding-shaped test piece along the shear direction at a test speed of 0.5 mm / second to measure the shear adhesion strength (adhesion force). Furthermore, a PCT test was carried out under the same conditions as above to measure the adhesion force after PCT.

[0186] 〈Bending Strength〉

[0187] The resin compositions prepared in Examples 4, 5, and Comparative Example 8 were coated onto PET films using a comma coater and dried with hot air to produce sheets. The resulting sheets were then molded and cured under vacuum conditions at 175°C for 10 minutes and then at 175°C for 2 hours to produce molded articles.

[0188] The strength was measured using an Autograph under the conditions of a bending test with a thickness of 1.5 mm, a width of 20 mm, a support distance of 24 mm, and a load cell lowering speed of 1 mm / min.

[0189] Furthermore, a PCT test was performed under the same conditions as above to measure the flexural strength (post-PCT flexural strength).

[0190] 〈Reduction rate〉

[0191] The adhesion reduction rate was calculated according to the following formula (3), and the bending strength reduction rate was calculated according to the following formula (4).

[0192]

Mathematical formula 1

[0193] Formula (3):

[0194]

[0195]

Mathematical formula 2

[0196] Formula (4):

[0197]

[0198] Glass transition temperature (DMA)

[0199] The sheets of Example 4, Comparative Example 8, and Comparative Example 9 used in the flexural strength measurement were processed to a thickness of 0.5 mm, a width of 7 mm, and a length of 50 mm. The sheets were then heated from 30°C to 300°C using a dynamic viscoelasticity measuring apparatus (Seiko Instruments, DMS6100) at a frequency of 10 Hz and a heating rate of 20°C / min in the flexural mode. The glass transition temperature was measured by reading the peak temperature of the loss tangent.

[0200] Tables 1, 2, and 3 show the compositions and evaluation results of the various resin compositions.

[0201]

[0202]

[0203] [Table 3]

[0204]

[0205] As shown in Table 1, the resin composition of Example 1 performed well in various evaluation criteria. On the other hand, Comparative Examples 1 and 2 show that the viscosity, adhesion, and adhesion reduction rate of the resin compositions obtained using a coupling agent different from the cyclic silane compound (C) deteriorated. Furthermore, Comparative Examples 3 and 4 show that the infiltration properties and appearance of the resin compositions obtained using an inorganic filler having a particle size of 5 μm or greater deteriorated.

[0206] As shown in Table 2, the resin compositions of Examples 2 and 3 performed well on various evaluation criteria. On the other hand, Comparative Examples 5 to 7 showed that the viscosity, post-PCT adhesion, and adhesion reduction rate of the resin compositions obtained using a coupling agent different from the cyclic silane compound (C) deteriorated. Furthermore, Comparative Example 8 showed that the resin composition without a coupling agent deteriorated on various evaluation criteria.

[0207] As shown in Table 3, the resin compositions of Examples 4 and 5 were excellent in various evaluation criteria. On the other hand, Comparative Example 9 showed that the viscosity, initial flexural strength, post-PCT flexural strength, and flexural strength reduction rate of the resin compositions obtained using different coupling agents were deteriorated.

[0208] Description of Reference Numerals

[0209] 1 Semiconductor devices

[0210] 2 substrate

[0211] 3 bumps

[0212] 4 Electronic components

[0213] 11 Bottom filling seal

[0214] 12 Overmolded seal

[0215] 21 Sheet insulation material

[0216] 22 resin layer

[0217] 23 Support film

[0218] 31 Metal-clad laminate

[0219] 32 Insulation layer

[0220] 33 metal foil

[0221] 41 circuit board

[0222] 42 Insulation layer

[0223] 43 conductor pattern

[0224] 51 Multi-layer metal-clad laminate

[0225] 52 first insulation layer

[0226] 53 conductor pattern

[0227] 56 Second insulation layer

[0228] 57 metal foil

[0229] 61 Multilayer circuit substrate

[0230] 62 first insulation layer

[0231] 63 first conductor pattern

[0232] 66 Second insulation layer

[0233] 67 second conductor pattern

Claims

1. A resin composition comprising a thermosetting resin component (A) and an inorganic filler (B), Regarding the particle size distribution of the inorganic filler (B), the particle size (D50) at which the cumulative value in the particle size distribution measurement is 50% is less than 1 μm, and the particle size (D99) at which the cumulative value in the particle size distribution measurement is 99% is less than 5 μm, A part or the entire surface of the inorganic filler (B) is surface-treated with a cyclic silane compound (C) represented by the following formula (1). The content of the inorganic filler (B) is 100 parts by mass or more and 500 parts by mass or less relative to 100 parts by mass of the thermosetting resin component (A). 【Chemical Formula 1】 Formula (1): R in formula (1) 1 is aryl, OR 2 Independently, R 2 is a methyl group or an ethyl group, and n is an integer of 3 or more and 5 or less.

2. The resin composition according to claim 1, wherein The thermosetting resin component (A) contains an epoxy resin.

3. The resin composition according to claim 1, wherein In the cyclic silane compound (C), R in the formula (1) 1 It is a phenyl group.

4. The resin composition according to claim 1, wherein The inorganic filler (B) has a particle diameter (D50) of 300 nm or less when the cumulative value in particle size distribution measurement is 50%.

5. The resin composition according to claim 1, wherein The inorganic filler (B) contains silicon dioxide. An underfill material comprising the resin composition according to any one of claims 1 to 5, wherein the underfill material has a rheometer viscosity at 110°C of 0.01 Pa·s or more and 1.0 Pa·s or less. An overmolding sealing material comprising the resin composition according to any one of claims 1 to 5, wherein the resin composition has a rheometer viscosity at 110°C of 1.0 Pa·s or more and 100 Pa·s or less. 8 . A semiconductor device comprising: a substrate; an electronic component mounted on the substrate; and an underfill sealing portion for sealing a gap between the substrate and the electronic component, the underfill sealing portion being formed of a cured product of the underfill material according to claim 6 .

9. A semiconductor device comprising: a substrate, an electronic component mounted on the substrate, and an overmold sealing portion that seals the electronic component in a manner covering the electronic component. The overmold sealing portion is formed of a cured product of the overmold sealing material according to claim 7 .

10. A sheet-like insulating material comprising a resin layer and a support film superimposed on the resin layer, wherein the resin layer comprises the resin composition according to any one of claims 1 to 5 or a semi-cured product of the resin composition and has a melt viscosity at 110°C of 100 Pa·s to 1000 Pa·s. 11 . A metal-clad laminate comprising: an insulating layer comprising a cured product of the resin composition according to claim 1 ; and a metal foil superimposed on the insulating layer. 12 . A circuit board comprising: an insulating layer comprising a cured product of the resin composition according to claim 1 ; and a conductive pattern formed on the insulating layer.

13. A multi-layer substrate comprising: a first insulating layer; a first conductor pattern formed on the first insulating layer; a second insulating layer comprising a cured product of the resin composition according to any one of claims 1 to 5, and overlapping the surface of the first insulating layer on which the first conductive pattern is formed; and A metal layer overlaps the second insulating layer.

14. A multilayer circuit substrate comprising: a first insulating layer; a first conductor pattern formed on the first insulating layer; a second insulating layer comprising a cured product of the resin composition according to any one of claims 1 to 5, and overlapping the surface of the first insulating layer on which the first conductive pattern is formed; and The second conductor pattern is formed on the second insulating layer.

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