Inspection apparatus, inspection system, inspection method, and semiconductor device manufacturing method
By setting up a control unit and a detection current source, and combining the current source and probe detection technology, the problem of low detection efficiency in the prior art is solved, and efficient and accurate semiconductor device detection is achieved.
Patent Information
- Application Number
- CN202480010276.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-09-15
- Filing Date
- 2024-02-07
- Publication Date
- 2025-09-12
AI Technical Summary
In the prior art, the inspection efficiency of semiconductor devices is low, and it is difficult to implement an efficient inspection method.
By setting up a control unit in the semiconductor device, implementing multiple actions and judgment actions, using a current source and a probe to detect changes in drain potential, and combining the application of different potentials, a highly sensitive detection method is achieved.
This enables efficient and accurate semiconductor device inspection, identifying crystal defects and characteristic changes, and improving inspection efficiency.
Smart Images
Figure CN120641767A_ABST
Abstract
Description
Technical Field
[0001] Embodiments of the present invention relate to an inspection apparatus, an inspection system, an inspection method, and a method for manufacturing a semiconductor device. Background Art
[0002] For example, during the manufacture of semiconductor devices, semiconductor devices are inspected, and it is desired to improve the efficiency of the inspection.
[0003] Prior art literature
[0004] Patent Literature
[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2022-105804 Summary of the Invention
[0006] Technical problem to be solved by the invention
[0007] Embodiments provide an inspection apparatus, an inspection system, an inspection method, and a method for manufacturing a semiconductor device that can improve efficiency.
[0008] Means for solving technical problems
[0009] According to an embodiment, an inspection device includes a control unit electrically connectable to a semiconductor device. The semiconductor device includes a semiconductor component, a transistor unit, and a diode unit. The transistor unit and the diode unit are provided in the semiconductor component. The transistor unit includes a source electrode, a drain electrode, and a gate electrode. The diode unit includes a first end and a second end. The first end is electrically connected to the source electrode. The second end is electrically connected to the drain electrode. The control unit is capable of performing a first operation, a first transit operation, a second operation, and a first determination operation. The first transit operation is performed after the first operation. The second operation is performed after the first transit operation. During the first operation, the control unit sets the gate electrode to an on-potential while a current source is electrically connected to the drain electrode, and detects a first detected value of the drain potential of the drain electrode. The current source is capable of supplying a first current to the drain electrode in a direction from the drain electrode to the source electrode. During the first transit operation, the control unit sets the gate electrode to an off-potential while the current source is electrically connected to the drain electrode. In the second operation, the control unit sets the gate electrode to the on-potential while the drain electrode is electrically connected to the current source, and detects a second detection value of the drain potential. In the first determination operation, the control unit inspects the semiconductor device based on a difference between the first detection value and the second detection value. BRIEF DESCRIPTION OF THE DRAWINGS
[0010] Figure 1It is a schematic diagram illustrating the inspection device according to the first embodiment.
[0011] Figure 2 This is a flowchart illustrating the operation of the inspection apparatus according to the first embodiment.
[0012] Figure 3 (a) and Figure 3 (b) is a schematic diagram illustrating the operation of the inspection device according to the first embodiment.
[0013] Figure 4 This is a flowchart illustrating a method for manufacturing a semiconductor device according to a fourth embodiment. DETAILED DESCRIPTION
[0014] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
[0015] In the present specification and each drawing, the same elements as those described above with respect to the drawings in which they appear are denoted by the same reference numerals, and detailed description thereof will be appropriately omitted.
[0016] (First embodiment)
[0017] Figure 1 It is a schematic diagram illustrating the inspection device according to the first embodiment.
[0018] like Figure 1 As shown, the inspection apparatus 210 of the embodiment includes a control unit 70. The control unit 70 can be electrically connected to the semiconductor device 10 to be inspected. The inspection apparatus 210 may also include a storage unit 72. The storage unit 72 may be provided separately from the inspection apparatus 210. The storage unit 72 may also be provided in a location different from the location where the control unit 70 is provided. The inspection system 310 of the embodiment includes the control unit 70 and the storage unit 72.
[0019] like Figure 1 As shown, semiconductor device 10 includes a semiconductor component 55, a transistor portion 50, and a diode portion 60. Transistor portion 50 and diode portion 60 are provided in semiconductor component 55. Transistor portion 50 is provided in a portion of semiconductor component 55, and diode portion 60 is provided in another portion of semiconductor component 55. For example, semiconductor device 10 is a transistor with a built-in diode portion 60. Transistor portion 50 and diode portion 60 are provided on a single chip.
[0020] The semiconductor component 55 includes, for example, SiC. For example, the diode portion 60 may be a Schottky diode.
[0021] The transistor portion 50 includes a source electrode 50S, a drain electrode 50D, and a gate electrode 50G. The diode portion 60 includes a first end 61 and a second end 62. The first end 61 is electrically connected to the source electrode 50S. The second end 62 is electrically connected to the drain electrode 50D. The first end 61 is shared by the source electrode 50S. The second end 62 is shared by the drain electrode 50D.
[0022] For example, the inspection device 210 may include multiple probes. For example, the inspection device 210 includes a drain probe 75D and a gate probe 75G. The drain probe 75D can be electrically connected to the drain electrode 50D. The gate probe 75G can be electrically connected to the gate electrode 50G. The source electrode 50S can be electrically connected to the control unit 70 via a grounded conductive member, for example.
[0023] A voltage is applied to the semiconductor device 10 via these probes, and the semiconductor device 10 is inspected.
[0024] like Figure 1 As shown, it is also possible to perform inspection on a plurality of semiconductor devices 10. In this case, a plurality of drain probes 75D and a plurality of gate probes 75G may be provided.
[0025] like Figure 1 As shown, in the inspection apparatus 210 , the control unit 70 may include a power supply 73P, a switch unit 73S, a detection circuit 73D, etc. In various operations described below, the gate voltage from the power supply 73P is applied to the gate electrode 50G at a desired timing via the switch unit 73S.
[0026] The detection circuit 73D can, for example, detect the potential of the drain electrode 50D. The detection circuit 73D can detect values related to the electrical characteristics of the semiconductor device 10 based on the timing of various operations described below. For example, an operation based on an interlock signal can be implemented. For example, a synchronization signal can be supplied to the detection circuit 73D from the switch unit 73S.
[0027] like Figure 1 As shown, a current source 74c may be provided. The current source 74c is electrically connected to the drain electrode 50D. The current source 74c can supply a first current to the drain electrode 50D in a direction from the drain electrode 50D to the source electrode 50S. The operation of the current source 74c may be controlled by, for example, a detection circuit 73D or the like.
[0028] The power supply 73P may be prepared separately from the inspection apparatus 210. The power supply 73P may be included in the inspection apparatus 210. The current source 74c may be prepared separately from the inspection apparatus 210. The current source 74c may be included in the inspection apparatus 210.
[0029] like Figure 1 As shown, a processing unit 71 may be provided. Figure 1As shown, a storage unit 72 may be provided. The processing unit 71 can process various data. For example, the processing unit 71 can process detected values. The processing unit 71 can store the processed values in the storage unit 72. The processing unit 71 can perform processing to compare a value based on the detected value with a reference value, etc. For example, the comparison result corresponds to the inspection result of the semiconductor device 10.
[0030] The processing unit 71 may be included in the control unit 70. The processing unit 71 may be provided at a location different from where the switch unit 73S and the like are provided. The storage unit 72 may be included in the control unit 70. The storage unit 72 may be provided at a location different from where the switch unit 73S and the like are provided.
[0031] The control unit 70 can inspect the semiconductor device 10 through operations described later.
[0032] Figure 2 This is a flowchart illustrating the operation of the inspection apparatus according to the first embodiment.
[0033] like Figure 2 As shown, in inspection apparatus 210, control unit 70 can perform a first operation OP1, a first transit operation OE1, a second operation OP2, and a first determination operation DC1. The first transit operation OE1 is performed after the first operation OP1. The second operation OP2 is performed after the first transit operation OE1. The first determination operation DC1 is performed after the second operation OP2. The second determination operation DC2 may also be performed. Examples of these operations are described below.
[0034] Figure 3 (a) and Figure 3 (b) is a schematic diagram illustrating the operation of the inspection device according to the first embodiment.
[0035] These figures correspond to timing diagrams of the actions. The horizontal axis of these figures is time tm. Figure 3 The vertical axis of (a) represents the gate voltage Vgs. The gate voltage Vgs is the voltage of the gate electrode 50G with respect to the potential of the source electrode 50S. Figure 3 The vertical axis of (b) represents the drain potential Vsd. The drain potential Vsd is the voltage of the drain electrode 50D with respect to the potential of the source electrode 50S.
[0036] like Figure 1 As shown, in the following operation, the drain electrode 50D is electrically connected to the current source 74c. Figure 3As shown in (b), in the first operation OP1, the control unit 70 sets the gate electrode 50G to the on-potential Von during the first period TP1, with the current source 74c electrically connected to the drain electrode 50D. During the first operation OP1, the current source 74c can supply a first current to the drain electrode 50D in a direction from the drain electrode 50D to the source electrode 50S. The first period TP1 is, for example, the period from the first time t1 to the second time t2.
[0037] like Figure 3 As shown in FIG. 5( b ), the control unit 70 detects a first detection value VD1 of the drain potential Vsd of the drain electrode 50D in the first operation OP1 . The control unit 70 may store the first detection value VD1 in the storage unit 72 in the first operation OP1 .
[0038] like Figure 3 As shown in (a), in the first passing operation OE1, the control unit 70 sets the gate electrode 50G to the off-potential Voff during the first passing period TE1 while the drain electrode 50D is electrically connected to the current source 74c. The first passing period TE1 is, for example, the period from the second time t2 to the third time t3.
[0039] like Figure 3 As shown in (b) of FIG. 2 , in the first elapsed period TE1 , the drain potential Vsd becomes, for example, the first elapsed period potential VDE.
[0040] like Figure 3 As shown in (a), in the second operation OP2, the control unit 70 sets the gate electrode 50G to the on-potential Von during the second period TP2 in a state where the drain electrode 50D is electrically connected to the current source 74c.
[0041] like Figure 3 As shown in (b) of FIG. 2 , the control unit 70 detects the second detection value VD2 of the drain potential Vsd in the second operation OP2 . The control unit 70 may cause the storage unit 72 to store the second detection value VD2 .
[0042] In the first determination operation DC1, the control unit 70 can determine the difference ΔV (see FIG. 1 ) between the first detection value VD1 and the second detection value VD2 based on the difference ΔV (see FIG. 1 ). Figure 3 (b)) and the semiconductor device 10 is inspected.
[0043] Thus, in the embodiment, in the first operation OP1 described above, the first detected value VD1 of the drain potential Vsd is detected as the initial value. Then, in the first pass operation OE1, with the gate electrode 50G set to the off-state potential Voff, the current source 74c supplies current to the drain electrode 50D. During this first pass operation OE1, the state of the semiconductor component 55 in the semiconductor device 10 may change. For example, holes may be injected from the drain electrode 50D into the semiconductor component 55, causing crystal defects to expand. Due to the expansion of the crystal defects, the characteristics of the semiconductor device 10 may change. For example, the forward voltage VF may change.
[0044] In the second operation OP2 following the first passing operation OE1, a second detection value VD2 of the drain potential Vsd is detected. In the first passing operation OE1, if the state of the semiconductor component 55 changes, the second detection value VD2 changes from the first detection value VD1. On the other hand, if the state of the semiconductor component 55 does not substantially change during the first passing operation OE1, the second detection value VD2 is substantially the same as the first detection value VD1.
[0045] A change in the state of the semiconductor component 55 can be detected based on the difference ΔV between the first detection value VD1 and the second detection value VD2. For example, the difference ΔV is compared with a threshold value. If the difference ΔV is below the threshold value, the semiconductor device 10 is determined to be a qualified product. If the difference ΔV exceeds the threshold value, the semiconductor device 10 is determined to be a defective product. This first determination operation DC1 allows for efficient inspection of the semiconductor device 10. According to the embodiment, an inspection device capable of improving efficiency can be provided.
[0046] For example, there is a first reference example in which a change in the state of semiconductor component 55 is evaluated by detecting a change in forward voltage VF. The sensitivity of the change in forward voltage VF detected in the first reference example is low. Therefore, the first reference example makes it difficult to detect a change in the state of semiconductor component 55 with high sensitivity.
[0047] In contrast, in the embodiment, while the on-potential Von is applied to the gate electrode 50G, the first detection value VD1 and the second detection value VD2 are detected. These detection values reflect the characteristics of the on-resistance Ron. Changes in these detection values are highly sensitive. In the embodiment, by evaluating the difference ΔV between the first detection value VD1 and the second detection value VD2, a highly sensitive result can be achieved.
[0048] In an embodiment, implementing Figure 3 (a) and Figure 3The synchronous rectification mode illustrated in (b) of FIG. Rectification is performed in synchronization with the on / off switching of the gate voltage Vgs. High-efficiency and high-precision detection is possible.
[0049] For example, in a MOS transistor including a reverse-conducting diode, when current is applied to the reverse-conducting diode, crystal defects present in semiconductor component 55 (e.g., SiC layer) expand. As the crystal defects expand, forward voltage VF increases, and on-resistance Ron increases. In an embodiment in which chips experiencing such characteristic variations due to the application of current to the reverse-conducting diode are removed through inspection, an inspection device capable of efficiently detecting defective products can be provided.
[0050] exist Figure 3 In (a), the on-potential Von and the off-potential Voff may satisfy the following first or second conditions. Under the first condition, the on-potential Von is positive with respect to the source potential of the source electrode 50S. Under the first condition, the off-potential Voff is negative with respect to the source potential.
[0051] Under the second condition, the on-potential Von and the off-potential Voff are positive with respect to the source potential. Under the second condition, the first difference between the off-potential Voff and the source potential is smaller than the second difference between the on-potential Von and the source potential.
[0052] In one example, the on-state potential Von may be greater than +10 V and less than +30 V (eg, +15 V). In one example, the off-state potential Voff may be greater than -8 V and less than -1 V (eg, -5 V).
[0053] In the embodiment, the first elapsed time period TE1 is longer than the second elapsed time period TP2. The longer the first elapsed time period TE1 is, the more efficiently the crystal defects spread. The shorter the second elapsed time period TP2 is, the shorter the inspection time can be.
[0054] In one example, the first period TP1 is longer than the second period TP2. The first period TP1 for detecting the initial state is longer, so that the first detection value VD1 can be stably detected.
[0055] In one example, the first elapsed period TE1 may be shorter than the first period TP1 .
[0056] The length of the first period TP1 may be, for example, 0.1 s to 15 s, the length of the first elapsed period TE1 may be, for example, 1 ms to 1 H, and the length of the second period TP2 may be, for example, 100 μs to 15 s.
[0057] For example, the control unit 70 may detect the first detection value VD1 at any time during the first period TP1 , and may detect the second detection value VD2 at any time during the second period TP2 .
[0058] For example, the control unit 70 may detect the first detection value VD1 at the first end of the first period TP1 and may detect the second detection value VD2 at the second end of the second period TP2.
[0059] like Figure 3 (a) and Figure 3 As shown in (b), the first passing action OE1 and the second action OP2 may be repeatedly performed. For example, the control unit 70 may further perform another first passing action OE1 after the second action OP2. The control unit 70 may further perform another second action OP2 after another first passing action OE1.
[0060] like Figure 2 As shown, the first passing action OE1, the second action OP2 and the first determination action DC1 can be repeatedly performed. The determination (first determination action DC1) can be performed in each of the multiple repetitions.
[0061] For example, if the number of repeated operations exceeds a predetermined number, a second determination operation DC2 may be performed. In the second determination operation DC2, the semiconductor device 10 is inspected based on the results of the multiple first determination operations DC1. For example, the second determination operation DC2 may be performed based on changes in the results of the multiple first determination operations DC1.
[0062] The control unit 70 can simultaneously perform at least a portion of the first operation OP1 on multiple semiconductor devices 10. The control unit 70 can simultaneously perform at least a portion of the first pass operation OE1 on multiple semiconductor devices 10. The control unit 70 can simultaneously perform at least a portion of the second operation OP2 on multiple semiconductor devices 10. This enables efficient inspection.
[0063] (Second embodiment)
[0064] The second embodiment relates to an inspection system 310 (see Figure 1 The inspection system 310 includes a control unit 70 and a storage unit 72 that can be electrically connected to the semiconductor device 10. In the inspection system 310, the control unit 70 can perform the above-mentioned operations. According to the second embodiment, an inspection system that can improve efficiency can be provided.
[0065] (Third embodiment)
[0066] The third embodiment relates to an inspection method. In the inspection method, the Figure 2The inspection method of the third embodiment is a method for inspecting a semiconductor device 10. Figure 1 As described, semiconductor device 10 includes semiconductor component 55, transistor portion 50, and diode portion 60. Transistor portion 50 and diode portion 60 are provided in semiconductor component 55. Transistor portion 50 is provided in a portion of semiconductor component 55, and diode portion 60 is provided in another portion of semiconductor component 55. Transistor portion 50 includes source electrode 50S, drain electrode 50D, and gate electrode 50G. Diode portion 60 includes a first end 61 and a second end 62. First end 61 is electrically connected to source electrode 50S. Second end 62 is electrically connected to drain electrode 50D.
[0067] In the inspection method of the third embodiment, the first operation OP1, the first passing operation OE1, the second operation OP2 and the first determination operation DC1 are performed (see Figure 2 The first operation OE1 is performed after the first operation OP1. The second operation OP2 is performed after the first operation OE1.
[0068] As about Figure 3 As described in (a) of FIG. 1 , in the first operation OP1, with the current source 74c electrically connected to the drain electrode 50D, the gate electrode 50G is set to the on-state potential Von, and a first detection value VD1 of the drain potential Vsd of the drain electrode 50D is detected. The current source 74c supplies a first current to the drain electrode 50D in a direction from the drain electrode 50D to the source electrode 50S.
[0069] like Figure 3 As shown in (a) of FIG. 2 , in the first passing operation OE1 , the gate electrode 50G is set to the off-potential Voff in a state where the drain electrode 50D is electrically connected to the current source 74 c .
[0070] like Figure 3 As shown in (a), in the second operation OP2, with the drain electrode 50D electrically connected to the current source 74c, the gate electrode 50G is set to the on-state potential Von, and the second detection value VD2 of the drain potential Vsd is detected. In the first determination operation DC1, the semiconductor device 10 is inspected based on the difference ΔV between the first detection value VD1 and the second detection value VD2. According to the embodiment, an inspection system with improved efficiency can be provided.
[0071] The configuration described in the first or second embodiment can also be applied to the third embodiment. For example, the first elapsed period TE1 of the first passing operation OE1 can be longer than the second period TP2 of the second operation OP2. For example, the first detection value VD1 can be detected at the first end of the first period TP1 of the first operation OP1, and the second detection value VD2 can be detected at the second end of the second period TP2 of the second operation OP2.
[0072] For example, the on-potential Von and the off-potential Voff may satisfy a first condition or a second condition. Under the first condition, the on-potential Von is positive when referenced to the source potential of the source electrode 50S, and the off-potential Voff is negative when referenced to the source potential. Under the second condition, the on-potential Von and the off-potential Voff are positive when referenced to the source potential. Under the second condition, the first difference between the off-potential Voff and the source potential is smaller than the second difference between the on-potential Von and the source potential.
[0073] In the third embodiment, the semiconductor component 55 may include SiC. The diode portion 60 may be, for example, a Schottky diode.
[0074] (Fourth embodiment)
[0075] Figure 4 This is a flowchart illustrating a method for manufacturing a semiconductor device according to a fourth embodiment.
[0076] like Figure 4 As shown, in the method for manufacturing the semiconductor device 10, the semiconductor device 10 is fabricated (step S110). The inspection method described in the third embodiment is performed (step S120). Thus, the semiconductor device 10 is inspected. In the fourth embodiment, the semiconductor component 55 included in the semiconductor device 10 is made of SiC.
[0077] Implementation methods may include the following technical solutions.
[0078] (Technical Solution 1)
[0079] An inspection device includes a control unit electrically connectable to a semiconductor device.
[0080] The semiconductor device includes a semiconductor component, a transistor portion, and a diode portion.
[0081] The transistor portion and the diode portion are provided in the semiconductor component,
[0082] The transistor portion includes a source electrode, a drain electrode, and a gate electrode.
[0083] The diode portion includes a first end and a second end,
[0084] The first end is electrically connected to the source electrode,
[0085] The second end is electrically connected to the drain electrode,
[0086] The control unit can implement the first action, the first passing action, the second action and the first determination action.
[0087] The first passing action is performed after the first action,
[0088] The second action is performed after the first action.
[0089] In the first operation, the control unit sets the gate electrode to an on-state potential in a state where the drain electrode is electrically connected to a current source, detects a first detection value of the drain potential of the drain electrode, and the current source is capable of supplying a first current from the drain electrode to the source electrode to the drain electrode.
[0090] The control unit sets the gate electrode to an off-potential in a state where the drain electrode is electrically connected to the current source during the first passing operation,
[0091] In the second operation, the control unit sets the gate electrode to the on-potential in a state where the drain electrode is electrically connected to the current source, and detects a second detection value of the drain potential.
[0092] The control unit inspects the semiconductor device based on a difference between the first detection value and the second detection value in the first determination operation.
[0093] (Technical Solution 2)
[0094] The inspection device according to claim 1 , wherein a first elapsed period of the first elapsed action is longer than a second period of the second elapsed action.
[0095] (Technical Solution 3)
[0096] The inspection device according to technical solution 2, wherein the first period of the first action is longer than the second period.
[0097] (Technical Solution 4)
[0098] The inspection device according to technical solution 3, wherein the first elapsed period is shorter than the first period.
[0099] (Technical Solution 5)
[0100] According to the inspection device described in technical solution 1,
[0101] The control unit is capable of detecting the first detection value at any time during the first period of the first action.
[0102] The control unit can detect the second detection value at any time during the second period of the second operation.
[0103] (Technical Solution 6)
[0104] According to the inspection device described in technical solution 1,
[0105] The control unit is capable of detecting the first detection value at the first end of the first period of the first action.
[0106] The control unit can detect the second detection value at the second end of the second period of the second operation.
[0107] (Technical Solution 7)
[0108] The inspection device according to any one of technical solutions 1 to 6 further includes the current source.
[0109] (Technical Solution 8)
[0110] An inspection device according to any one of technical solutions 1 to 7, wherein:
[0111] The on-state potential and the off-state potential satisfy the first condition or the second condition,
[0112] Under the first condition, the on-potential is positive when the source potential of the source electrode is used as a reference, and the off-potential is negative when the source potential is used as a reference.
[0113] Under the second condition, the on-potential and the off-potential are positive with respect to the source potential, and a first difference between the off-potential and the source potential is smaller than a second difference between the on-potential and the source potential.
[0114] (Technical Solution 9)
[0115] The inspection device according to any one of technical solutions 1 to 8, wherein the semiconductor component contains SiC.
[0116] (Technical Solution 10)
[0117] An inspection device according to any one of technical solutions 1 to 9, wherein:
[0118] The control unit can further perform other first passing actions after the second action.
[0119] The control unit may further perform another second operation after the other first transition operation.
[0120] (Technical Solution 11)
[0121] An inspection device according to any one of technical solutions 1 to 10, wherein:
[0122] The control unit is capable of simultaneously performing at least a portion of the first operation on a plurality of the semiconductor devices.
[0123] The control unit can simultaneously perform at least a portion of the first process operation on the plurality of semiconductor devices.
[0124] (Technical Solution 12)
[0125] The inspection device according to any one of technical solutions 1 to 11, further comprising:
[0126] a drain probe capable of being electrically connected to the drain electrode; and
[0127] A gate probe can be electrically connected to the gate electrode.
[0128] (Technical Solution 13)
[0129] An inspection system comprising:
[0130] a control unit capable of being electrically connected to the semiconductor device; and
[0131] Storage Department,
[0132] The semiconductor device includes a semiconductor component, a transistor portion, and a diode portion.
[0133] The transistor portion and the diode portion are provided in the semiconductor component,
[0134] The transistor portion includes a source electrode, a drain electrode, and a gate electrode.
[0135] The diode portion includes a first end and a second end,
[0136] The first end is electrically connected to the source electrode,
[0137] The second end is electrically connected to the drain electrode,
[0138] The control unit can implement the first action, the first passing action, the second action and the first determination action.
[0139] The first passing action is performed after the first action,
[0140] The second action is performed after the first passing action. In the first action, the control unit sets the gate electrode to an on-potential in a state where the drain electrode is electrically connected to a current source, and detects a first detection value of the drain potential of the drain electrode. The current source is capable of supplying a first current from the drain electrode to the source electrode to the drain electrode.
[0141] The control unit sets the gate electrode to an off-potential in a state where the drain electrode is electrically connected to the current source during the first passing operation,
[0142] In the second operation, the control unit sets the gate electrode to the on-potential in a state where the drain electrode is electrically connected to the current source, and detects a second detection value of the drain potential.
[0143] The control unit inspects the semiconductor device based on a difference between the first detection value and the second detection value in the first determination operation.
[0144] (Technical Solution 14)
[0145] An inspection method is a method for inspecting a semiconductor device.
[0146] The semiconductor device includes a semiconductor component, a transistor portion, and a diode portion.
[0147] The transistor portion and the diode portion are provided in the semiconductor component,
[0148] The transistor portion includes a source electrode, a drain electrode, and a gate electrode.
[0149] The diode portion includes a first end and a second end,
[0150] The first end is electrically connected to the source electrode,
[0151] The second end is electrically connected to the drain electrode;
[0152] Perform the first action, the first passing action, the second action and the first determination action,
[0153] The first passing action is performed after the first action,
[0154] The second action is performed after the first action. In the first action, the gate electrode is set to an on-potential in a state where the drain electrode is electrically connected to a current source, a first detection value of the drain potential of the drain electrode is detected, and the current source supplies a first current from the drain electrode to the source electrode to the drain electrode.
[0155] In the first passing operation, the gate electrode is set to an off potential in a state where the drain electrode is electrically connected to the current source,
[0156] In the second operation, the gate electrode is set to the on-potential in a state where the drain electrode is electrically connected to the current source, and a second detection value of the drain potential is detected.
[0157] In the first determination operation, the semiconductor device is inspected based on a difference between the first detection value and the second detection value.
[0158] (Technical Solution 15)
[0159] According to the inspection method of technical solution 14, the first passing period of the first passing action is longer than the second period of the second action.
[0160] (Technical Solution 16)
[0161] According to the inspection method described in technical solution 14,
[0162] detecting the first detection value at the first end of the first period of the first action,
[0163] At the second end of the second period of the second operation, the second detection value is detected.
[0164] (Technical Solution 17)
[0165] An inspection method according to any one of technical solutions 14 to 16, wherein:
[0166] The on-state potential and the off-state potential satisfy the first condition or the second condition,
[0167] Under the first condition, the on-potential is positive when the source potential of the source electrode is used as a reference, and the off-potential is negative when the source potential is used as a reference.
[0168] Under the second condition, the on-potential and the off-potential are positive with respect to the source potential, and a first difference between the off-potential and the source potential is smaller than a second difference between the on-potential and the source potential.
[0169] (Technical Solution 18)
[0170] The inspection method according to any one of Technical Solutions 14 to 17, wherein the semiconductor component contains SiC.
[0171] (Technical Solution 19)
[0172] A method for manufacturing a semiconductor device,
[0173] manufacturing the semiconductor device,
[0174] The semiconductor device is inspected by implementing the inspection method described in any one of technical solutions 14 to 17.
[0175] (Technical Solution 20)
[0176] The method for manufacturing a semiconductor device according to Technical Solution 19, wherein the semiconductor component contains SiC.
[0177] According to the embodiments, it is possible to provide an inspection apparatus, an inspection system, an inspection method, and a method for manufacturing a semiconductor device that can improve efficiency.
[0178] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of various elements such as the control unit and storage unit included in an inspection device or inspection system are encompassed within the scope of the present invention as long as those skilled in the art can appropriately select from known configurations and implement the present invention in the same manner and achieve the same effects.
[0179] Furthermore, any combination of two or more elements of each specific example within a technically possible range is included in the scope of the present invention as long as it includes the gist of the present invention.
[0180] In addition, all inspection devices, inspection systems, inspection methods and semiconductor device manufacturing methods that can be implemented by those skilled in the art by making appropriate design changes based on the inspection device, inspection system, inspection method and semiconductor device manufacturing method described above as embodiments of the present invention also fall within the scope of the present invention as long as they include the main purpose of the present invention.
[0181] Furthermore, within the scope of the concept of the present invention, those skilled in the art can conceive of various changes and modifications, and it is understood that these changes and modifications also fall within the scope of the present invention.
[0182] While several embodiments of the present invention have been described, these embodiments are provided as examples and are not intended to limit the scope of the invention. These embodiments may be implemented in various other ways, and various omissions, substitutions, and modifications may be made without departing from the spirit of the invention. These embodiments and their variations are intended to be within the scope and spirit of the invention, and are also intended to be within the scope of the invention set forth in the claims and their equivalents.
[0183] Description of Reference Numerals
[0184] 10: Semiconductor device, 50: Transistor portion, 50D: Drain electrode, 50G: Gate electrode, 50S: Source electrode, 55: Semiconductor component, 60: Diode portion, 61, 62: First and second terminals, 70: Control portion, 71: Processing portion, 72: Storage portion, 73D: Detection circuit, 73P: Power supply, 73S: Switch portion, 74c: Current source, 75D: Drain probe, 75G: Gate probe, 210: Inspection device, 310: Inspection system, DC1, DC2: First and second determination operations, OE1: First elapsed operation, OP1, OP2: First and second operations, TE1: First elapsed period, TP1, TP2: First and second periods, VD1, VD2: First and second detection values, VDE: First elapsed period potential, Vgs: Gate voltage, Voff: Off-state potential, Von: On-state potential, Vsd: Drain potential, t1-t3: First to third times
Claims
1. An inspection device comprising a control unit electrically connectable to a semiconductor device, The semiconductor device includes a semiconductor component, a transistor portion, and a diode portion. The transistor portion and the diode portion are provided in the semiconductor component, The transistor portion includes a source electrode, a drain electrode, and a gate electrode. The diode portion includes a first end and a second end, The first end is electrically connected to the source electrode, The second end is electrically connected to the drain electrode, The control unit can implement the first action, the first passing action, the second action and the first determination action. The first passing action is performed after the first action, The second action is performed after the first action. In the first operation, the control unit sets the gate electrode to an on-state potential in a state where the drain electrode is electrically connected to a current source, detects a first detection value of the drain potential of the drain electrode, and the current source is capable of supplying a first current from the drain electrode to the source electrode to the drain electrode. The control unit sets the gate electrode to an off-potential in a state where the drain electrode is electrically connected to the current source during the first passing operation, In the second operation, the control unit sets the gate electrode to the on-potential in a state where the drain electrode is electrically connected to the current source, and detects a second detection value of the drain potential. The control unit inspects the semiconductor device based on a difference between the first detection value and the second detection value in the first determination operation.
2. The inspection device according to claim 1, wherein: A first elapsed period of the first elapsed operation is longer than a second period of the second elapsed operation.
3. The inspection device according to claim 2, wherein: The first period of the first operation is longer than the second period.
4. The inspection device according to claim 1, wherein: The semiconductor component includes SiC.
5. The inspection device according to any one of claims 1 to 4, wherein: The control unit can further perform other first passing actions after the second action. The control unit may further perform another second operation after the other first transition operation. The inspection device according to claim 1 , wherein: The control unit is capable of simultaneously performing at least a portion of the first operation on a plurality of the semiconductor devices. The control unit can simultaneously perform at least a portion of the first process operation on the plurality of semiconductor devices.
7. The inspection device according to claim 1, wherein: Also features: a drain probe capable of being electrically connected to the drain electrode; and A gate probe can be electrically connected to the gate electrode.
8. An inspection system comprising: a control unit capable of being electrically connected to the semiconductor device; and Storage Department, The semiconductor device includes a semiconductor component, a transistor portion, and a diode portion. The transistor portion and the diode portion are provided in the semiconductor component, The transistor portion includes a source electrode, a drain electrode, and a gate electrode. The diode portion includes a first end and a second end, The first end is electrically connected to the source electrode, The second end is electrically connected to the drain electrode, The control unit can implement the first action, the first passing action, the second action and the first determination action. The first passing action is performed after the first action, The second action is performed after the first action. In the first operation, the control unit sets the gate electrode to an on-potential in a state where the drain electrode is electrically connected to a current source, detects a first detection value of the drain potential of the drain electrode, and the current source is capable of supplying a first current from the drain electrode to the source electrode to the drain electrode. The control unit sets the gate electrode to an off-potential in a state where the drain electrode is electrically connected to the current source during the first passing operation, In the second operation, the control unit sets the gate electrode to the on-potential in a state where the drain electrode is electrically connected to the current source, and detects a second detection value of the drain potential. The control unit inspects the semiconductor device based on a difference between the first detection value and the second detection value in the first determination operation.
9. An inspection method for inspecting a semiconductor device. The semiconductor device includes a semiconductor component, a transistor portion, and a diode portion. The transistor portion and the diode portion are provided in the semiconductor component, The transistor portion includes a source electrode, a drain electrode, and a gate electrode. The diode portion includes a first end and a second end, The first end is electrically connected to the source electrode, The second end is electrically connected to the drain electrode, Perform the first action, the first passing action, the second action and the first determination action, The first passing action is performed after the first action, The second action is performed after the first action. In the first operation, the gate electrode is set to an on-potential in a state where the drain electrode is electrically connected to a current source, a first detection value of the drain potential of the drain electrode is detected, and the current source supplies a first current from the drain electrode toward the source electrode to the drain electrode. In the first passing operation, the gate electrode is set to an off potential in a state where the drain electrode is electrically connected to the current source, In the second operation, the gate electrode is set to the on-potential in a state where the current source is electrically connected to the drain electrode, and a second detection value of the drain potential is detected. In the first determination operation, the semiconductor device is inspected based on a difference between the first detection value and the second detection value.
10. A method for manufacturing a semiconductor device, manufacturing the semiconductor device, The semiconductor device is inspected by carrying out the inspection method according to claim 9.
Citation Information
Patent Citations
Method of inspecting silicon carbide semiconductor device
JP2022105804A