Integratable multi-element real-time temperature compensation system and method for ferroelectric memory

Abstract

The invention relates to the technical field of ferroelectric memories, in particular to an integratable multi-element real-time temperature compensation system and method for a ferroelectric memory, and the system comprises a built-in temperature detection module which detects the temperature information of each sub-array in a ferroelectric memory array and the relative position between the sub-arrays; determining the highest temperature of each sub-array in the ferroelectric storage array; the dynamic frequency modulation compensation module can dynamically regulate and control the working frequency of the ferroelectric storage array; the dynamic driving compensation module is used for matching a target read-write driving signal for each sub-array so as to regulate and control the real-time operation voltage of each sub-array; and the real-time temperature compensation module generates a temperature compensation value according to the working frequency and the real-time operation voltage of the ferroelectric memory array so as to carry out multi-element real-time temperature compensation on the ferroelectric memory. Therefore, the problems that the power consumption and the cost of a temperature compensation mode of a ferroelectric memory in the related technology are relatively high, and the high efficiency and the stability of the ferroelectric memory in a complex working environment are reduced are solved.

Description

Technical Field

[0001] The present application relates to the technical field of ferroelectric memory, and in particular to an integrated multi-element real-time temperature compensation system and method for ferroelectric memory. Background Art

[0002] With the further expansion of the application field of ferroelectric memory, there is an urgent need for a low-power, high-performance, real-time ferroelectric memory temperature compensation solution to meet the increasing demand for ferroelectric memory reliability and performance consistency.

[0003] In the prior art, temperature compensation solutions for ferroelectric memories often rely on off-chip trimming and calibration techniques, or on temperature management systems built with external temperature sensors and compensation chips. These methods typically perform one-time calibration during the manufacturing or packaging stages, or use an external controller to roughly adjust the memory's operating voltage or read / write timing based on global temperature information.

[0004] However, the temperature compensation method of ferroelectric memory in the related art has high power consumption and cost, and mostly adopts a single compensation mechanism, which reduces the working efficiency of the temperature compensation system and reduces the efficiency and stability of the ferroelectric memory in complex working environments. It cannot meet the temperature compensation requirements of the ferroelectric memory and needs to be solved urgently. Summary of the Invention

[0005] This application is based on the following problems and understandings made by the inventors:

[0006] Given that the performance of ferroelectric memory is significantly affected by temperature, especially in terms of the electrical characteristics of ferroelectric devices, the timing matching of ferroelectric memory, and the driving capability of switching transistors, first of all, temperature changes will affect the electrical characteristics of ferroelectric memory cells, such as the coercive field and polarization strength of ferroelectric capacitors, which in turn causes the readout voltage and the reference voltage to drift, narrowing the detection window of the sensitive amplifier and bringing greater challenges to the design of the sensitive amplifier.

[0007] Secondly, the resistance and capacitance of memory cells are closely related to temperature. Temperature changes can alter these parameters, affecting the cell's charge and discharge time constant. In a memory circuit system with a fixed operating frequency, this can lead to mismatched read and write timings, reducing read and write accuracy.

[0008] Finally, temperature changes will also cause the threshold voltage and equivalent capacitance of the driving transistor to drift, reducing the temperature consistency of the read and write operation line driving capabilities, causing the read and write efficiency of the memory to fluctuate with temperature changes, thereby reducing the reliability of use, which urgently needs to be improved.

[0009] The present application provides an integrated multi-element real-time temperature compensation system and method for ferroelectric memory to solve the problems of high power consumption and cost of the temperature compensation method of ferroelectric memory in related technologies, and the use of a single compensation mechanism, which reduces the working efficiency of the temperature compensation system and reduces the efficiency and stability of the ferroelectric memory in complex working environments.

[0010] The first embodiment of the present application provides an integrable multi-element real-time temperature compensation system for a ferroelectric memory, comprising: a built-in temperature detection module for detecting the temperature information of each sub-array in a ferroelectric memory array divided based on the ferroelectric memory and the relative position between each sub-array, and determining the maximum temperature of each sub-array in the ferroelectric memory array; a dynamic frequency modulation compensation module for generating a corresponding frequency control signal according to the maximum temperature, so as to dynamically regulate the operating frequency of the ferroelectric memory array using the frequency control signal; a dynamic drive compensation module for matching a target read / write drive signal to each sub-array based on the temperature information and the relative position, so as to regulate the real-time operating voltage of each sub-array according to the target read / write drive signal; and a real-time temperature compensation module for generating a temperature compensation value for the ferroelectric memory array according to the operating frequency and the real-time operating voltage of the ferroelectric memory array, so as to perform multi-element real-time temperature compensation on the ferroelectric memory based on the temperature compensation value.

[0011] Optionally, in one embodiment of the present application, the system of the embodiment of the present application further includes: a static voltage compensation module, configured to compensate the reference voltage and the read voltage of the ferroelectric memory array to a zero temperature coefficient voltage.

[0012] Optionally, in one embodiment of the present application, the dynamic frequency modulation compensation module includes: a frequency control unit, used to convert the temperature information of each sub-array in the ferroelectric memory array into frequency information; a clock generation unit, used to determine the frequency control signal using the frequency information; and a read-write control signal generation unit, used to generate a read-write control signal corresponding to the maximum temperature of each sub-array in the ferroelectric memory array based on the frequency control signal and the target read-write enable signal, so as to dynamically control the operating frequency of the ferroelectric memory array according to the read-write control signal.

[0013] Optionally, in one embodiment of the present application, the dynamic drive compensation module includes: a temperature analysis unit, configured to package the temperature information and relative position of each sub-array to obtain packaged information; and a drive compensation unit, configured to match the target read / write drive signal to each sub-array based on the packaged information, so as to regulate the real-time operating voltage of each sub-array according to the target read / write drive signal.

[0014] Optionally, in one embodiment of the present application, the drive compensation unit includes: an analog-to-digital converter, configured to convert the temperature information of each sub-array into a digital signal; a control sub-unit, configured to encode the digital signal into a control signal for each sub-array; and a drive generation sub-unit, configured to generate the target read / write drive signal that matches the equivalent load of each sub-array based on the control signal.

[0015] A second aspect of the present application provides an integrated multi-element real-time temperature compensation method for a ferroelectric memory, comprising the following steps: detecting the temperature information of each sub-array in a ferroelectric memory array divided based on the ferroelectric memory and the relative position between each sub-array, and determining the maximum temperature of each sub-array in the ferroelectric memory array; generating a corresponding frequency control signal according to the maximum temperature, so as to dynamically regulate the operating frequency of the ferroelectric memory array using the frequency control signal; matching a target read / write drive signal to each sub-array based on the temperature information and the relative position, so as to regulate the real-time operating voltage of each sub-array according to the target read / write drive signal; generating a temperature compensation value for the ferroelectric memory array according to the operating frequency and the real-time operating voltage of the ferroelectric memory array, so as to perform multi-element real-time temperature compensation on the ferroelectric memory based on the temperature compensation value.

[0016] Optionally, in one embodiment of the present application, dynamically controlling the operating frequency of the ferroelectric memory array using the frequency control signal includes: converting the temperature information of each subarray in the ferroelectric memory array into frequency information; determining the frequency control signal using the frequency information; and generating a read / write control signal corresponding to the maximum temperature of each subarray in the ferroelectric memory array based on the frequency control signal and a target read / write enable signal, so as to dynamically control the operating frequency of the ferroelectric memory array according to the read / write control signal.

[0017] Optionally, in one embodiment of the present application, regulating the real-time operating voltage of each sub-array according to the target read / write drive signal includes: packaging the temperature information and relative position of each sub-array to obtain packaged information; and matching the target read / write drive signal to each sub-array based on the packaged information to regulate the real-time operating voltage of each sub-array according to the target read / write drive signal.

[0018] The third aspect of the present application provides an electronic device, comprising: a memory, a processor, and a computer program stored on the memory and runnable on the processor, wherein the processor executes the program to implement the integrated multi-element real-time temperature compensation method for ferroelectric memory as described in the above embodiment.

[0019] The fourth aspect of the present application provides a computer-readable storage medium, which stores a computer program. When the program is executed by a processor, it implements the above-mentioned integrated multi-element real-time temperature compensation method for ferroelectric memory.

[0020] The fifth aspect of the present application provides a computer program product, including a computer program, which, when executed, is used to implement the above-mentioned integrated multi-element real-time temperature compensation method for ferroelectric memory.

[0021] The embodiment of the present application can detect the temperature information of each sub-array in the ferroelectric memory array and the relative position between each sub-array through the built-in temperature detection module, and determine the maximum temperature of each sub-array in the ferroelectric memory array. Then, the operating frequency of the ferroelectric memory array can be dynamically adjusted through the dynamic frequency modulation compensation module, and the target read and write drive signal is matched to each sub-array through the dynamic drive compensation module to adjust the real-time operating voltage of each sub-array. Secondly, based on the real-time temperature compensation module, its temperature compensation value is generated according to the operating frequency and real-time operating voltage of the ferroelectric memory array, thereby performing multivariate real-time temperature compensation on the ferroelectric memory, effectively improving the efficiency and stability of the ferroelectric memory in complex working environments. Thus, the problems of high power consumption and cost of the temperature compensation method of the ferroelectric memory in the related art and the use of a single compensation mechanism are solved, which reduces the working efficiency of the temperature compensation system and reduces the efficiency and stability of the ferroelectric memory in complex working environments.

[0022] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0024] Figure 1 Schematic diagram of the structure of an integrated multi-element real-time temperature compensation system for ferroelectric memory provided in accordance with an embodiment of the present application;

[0025] Figure 2 A schematic diagram of an integrated multi-element real-time temperature compensation system for a ferroelectric memory chip according to a specific embodiment of the present application;

[0026] Figure 3 This is a schematic diagram of a dynamic frequency modulation compensation strategy according to a specific embodiment of the present application;

[0027] Figure 4 A schematic diagram of a dynamic drive compensation strategy according to a specific embodiment of the present application;

[0028] Figure 5 A schematic diagram of a static voltage compensation strategy according to a specific embodiment of the present application;

[0029] Figure 6 A flowchart of an integrated multi-element real-time temperature compensation method for a ferroelectric memory provided according to an embodiment of the present application;

[0030] Figure 7 A schematic diagram of the structure of an electronic device provided according to an embodiment of the present application. DETAILED DESCRIPTION

[0031] The following describes in detail embodiments of the present application, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present application, and should not be construed as limiting the present application.

[0032] The following describes a schematic structural diagram of an integrated multi-element real-time temperature compensation system for ferroelectric memory proposed in accordance with an embodiment of the present application with reference to the accompanying drawings. Figure 1 3 is a schematic structural diagram of an integrated multi-element real-time temperature compensation system for ferroelectric memory according to an embodiment of the present application.

[0033] like Figure 1 As shown, the integrable multi-element real-time temperature compensation system 10 for ferroelectric memory includes: a built-in temperature detection module 100 , a dynamic frequency modulation compensation module 200 , a dynamic drive compensation module 300 and a real-time temperature compensation module 400 .

[0034] Specifically, the built-in temperature detection module 100 is used to detect the temperature information of each sub-array in the ferroelectric memory array divided based on the ferroelectric memory and the relative position between each sub-array, and determine the maximum temperature of each sub-array in the ferroelectric memory array.

[0035] In the actual implementation process, the embodiment of the present application can set a built-in temperature detection module 100, first, as Figure 2 As shown, the ferroelectric memory array is divided into multiple sub-arrays, and the built-in temperature detection module 100 can detect the temperature information of each sub-array, identify the relative position between each sub-array, and determine the maximum temperature of each sub-array in the ferroelectric memory array, that is, the maximum temperature value corresponding to the sub-array with the highest temperature, which effectively improves the feasibility of real-time temperature compensation of the ferroelectric memory.

[0036] The dynamic frequency modulation compensation module 200 is used to generate a corresponding frequency control signal according to the maximum temperature, so as to dynamically adjust the operating frequency of the ferroelectric memory array using the frequency control signal.

[0037] As a possible way to achieve this, Figure 2 As shown, in the embodiment of the present application, a dynamic frequency modulation compensation module 200 can be provided, which can receive the maximum temperature value of the sub-array transmitted by the built-in temperature detection module 100 in the above step. The dynamic frequency modulation compensation module 200 generates a frequency control signal whose frequency matches the maximum temperature, so as to dynamically control the operating frequency of the ferroelectric memory array using the frequency control signal, effectively reduce power consumption at high temperature, and improve the working stability and energy efficiency of the memory.

[0038] In an embodiment of the present application, a dynamic frequency modulation compensation strategy is provided in the dynamic frequency modulation compensation module 200, i.e., a temperature compensation strategy for the operating frequency of the ferroelectric memory system. A mismatch in the timing matching of the ferroelectric memory will result in read and write errors, reducing the read and write accuracy. When the clock cycle is close to the read and write time constant of the storage unit, the ferroelectric capacitor may not have enough time to fully polarize during a single write operation cycle, thereby generating a write error; the read level during a single read operation cycle may not be fully established or the write-back may be insufficient, thereby generating a read error. The read and write time constant is related to the resistance and capacitance of the storage unit. The resistance comes from the non-negligible internal resistance of the word line, bit line, and drive line, and the capacitance comes from the parasitic capacitance of the wire, the gate capacitance of the driver transistor, and the equivalent capacitance of the ferroelectric capacitor. These resistance values ​​and capacitance values ​​will fluctuate with temperature changes. Therefore, the read and write time constant will also fluctuate with temperature changes. The present application dynamically adjusts the operating frequency of the ferroelectric memory array through real-time feedback from the built-in temperature detection module 100 to ensure the stability of the key performance of read and write accuracy.

[0039] Optionally, in one embodiment of the present application, the dynamic frequency modulation compensation module 200 includes: a frequency control unit, a clock generation unit, and a read / write control signal generation unit.

[0040] The frequency control unit is used to convert the temperature information of each sub-array in the ferroelectric memory array into frequency information.

[0041] In some embodiments, Figure 3 As shown, the frequency control unit set in the dynamic frequency modulation compensation module 200 can receive the temperature extreme values ​​of all sub-arrays in the ferroelectric memory array detected by the built-in temperature detection module 100, such as the maximum temperature value. Then, the frequency control unit converts the temperature information of each sub-array in the ferroelectric memory array into frequency information, providing an accurate basis for dynamic frequency modulation compensation, thereby realizing on-demand frequency reduction or frequency increase, and improving system energy efficiency and stability.

[0042] The clock generating unit is used to determine the frequency control signal using the frequency information.

[0043] In some embodiments, as Figure 3As shown, the clock generation unit set in the dynamic frequency modulation compensation module 200 can use the frequency information fed back by the frequency control unit in the above steps to determine the frequency control signal, ensuring that the ferroelectric memory array operates at the optimal frequency under different temperature conditions, thereby improving overall performance and energy efficiency.

[0044] The read / write control signal generating unit is used to generate a read / write control signal corresponding to the maximum temperature of each sub-array in the ferroelectric memory array based on the frequency control signal and the target read / write enable signal, so as to dynamically control the operating frequency of the ferroelectric memory array according to the read / write control signal.

[0045] In the actual implementation process, Figure 3 As shown, the read-write control signal generating unit provided in the dynamic frequency modulation compensation module 200 can generate a read-write control signal corresponding to the maximum temperature of each sub-array in the ferroelectric memory array based on the frequency control signal and the read-write enable signal. Specifically, under the action of the read-write enable signal, the read-write control signal generating unit can freely switch the read-write state. The read-write control signal generating unit that receives the frequency control signal and the read-write enable signal can generate a read-write control signal that matches the temperature extreme of the ferroelectric memory array. The frequency of the read-write control signal matches the performance of the memory array in the current worst working state, thereby ensuring that all sub-arrays of the memory array can correctly read and write data at the working frequency, achieving temperature consistency of the read-write accuracy, and further realizing real-time automatic working frequency regulation based on temperature compensation.

[0046] The dynamic drive compensation module 300 is used to match the target read / write drive signal to each sub-array based on the temperature information and the relative position, so as to adjust the real-time operating voltage of each sub-array according to the target read / write drive signal.

[0047] As a possible way to achieve this, Figure 2 As shown, the embodiment of the present application can be provided with a dynamic drive compensation module 300, which can receive the temperature information of each subarray and the relative position between each subarray transmitted by the built-in temperature detection module 100 in the above steps. Then, based on the temperature information and relative position, the dynamic drive compensation module 300 matches the appropriate read / write drive signal to each subarray to achieve real-time operating voltage regulation that is accurate to the temperature state of each subarray. Therefore, the embodiment of the present application can accurately match and adjust the read / write drive signal corresponding to each subarray, thereby optimizing the real-time operating voltage of each subarray and improving read / write stability and system energy efficiency.

[0048] In an embodiment of the present application, a dynamic drive compensation strategy is set in the dynamic drive compensation module 300, that is, a temperature compensation strategy for the driving capability of the ferroelectric memory sub-array operating line. Temperature changes will affect the threshold voltage of the transistor and the equivalent capacitance of the ferroelectric capacitor, that is, the load that the read and write operating line needs to drive will be affected by the temperature. The fixed read and write operating line operating voltage cannot guarantee the temperature consistency of its driving capability, and the read and write efficiency of the ferroelectric memory also fluctuates with temperature changes. Therefore, the present application matches the appropriate operating voltage in real time through real-time feedback from the built-in temperature detection module 100 to ensure the temperature consistency of the read and write operating line driving capability.

[0049] In addition, the fatigue and degradation rate of ferroelectric materials are positively correlated with the operating voltage, and the response time required for the read and write operations of the memory cell is also positively correlated with the operating voltage. A smaller operating voltage can increase the durability of the ferroelectric memory; for a certain read and write time constant, lowering the operating voltage means that the response time required for the memory cell voltage to be established will be shortened. Therefore, generating a low read and write operating voltage with sufficient driving capability alone, in addition to facilitating real-time regulation of the read and write operation line load capacity, can also extend the service life of the ferroelectric memory and speed up the read and write speed. Large-scale ferroelectric memory arrays are usually divided into multiple levels of sub-arrays. In actual use scenarios, the temperature changes of different sub-arrays may also differ. The built-in temperature detection module 100 of the present application can feedback the sub-array temperature and the relative position of the sub-array, thereby realizing real-time operating voltage regulation accurate to the sub-array temperature state.

[0050] In one embodiment of the present application, the dynamic drive compensation module 300 includes: a temperature analysis unit and a drive compensation unit.

[0051] The temperature analysis unit is used to package the temperature information and relative position of each sub-array to obtain packaged information.

[0052] In some embodiments, Figure 4 As shown, the built-in temperature detection module 100 can feed back the detected temperature information of all sub-arrays in the ferroelectric memory array and the relative position information between each sub-array to the temperature analysis unit, and the temperature analysis unit packages the information to obtain packaged information, so that the packaged information can be transmitted to the corresponding drive compensation unit, thereby realizing refined perception of the temperature field distribution of the memory array and improving the system response accuracy and stability.

[0053] The drive compensation unit is used to match the target read / write drive signal to each sub-array based on the packaged information, so as to adjust the real-time operating voltage of each sub-array according to the target read / write drive signal.

[0054] In some embodiments, as Figure 4 As shown, the dynamic drive compensation module 300 can be provided with a plurality of drive compensation units, wherein each drive compensation unit includes an analog-to-digital converter, a control subunit, and a drive generation subunit in the following steps. The operating voltage of each subarray in the ferroelectric memory array is generated by a drive compensation unit, so that the drive compensation unit can match appropriate read / write drive signals to each subarray to regulate the real-time operating voltage of each subarray according to the read / write drive signals, thereby realizing precise dynamic regulation of the operating voltage and improving read / write reliability and energy efficiency consistency.

[0055] Optionally, in one embodiment of the present application, the driving compensation unit includes: an analog-to-digital converter, a control subunit and a driving generation subunit.

[0056] The analog-to-digital converter is used to convert the temperature information of each sub-array into a digital signal.

[0057] As a possible way to achieve this, Figure 4 As shown, the analog-to-digital converter provided in the driving compensation unit can convert the temperature information of each sub-array into a digital signal and transmit the digital signal to the control sub-unit in the following steps, so as to perform real-time analysis and compensation control on the temperature information of each sub-array, thereby improving the system adjustment accuracy and response speed.

[0058] The control subunit is configured to encode the digital signal into a control signal for each subarray.

[0059] In some embodiments, Figure 4 As shown, the control subunit set by the driving compensation unit can encode the digital signal into the control signal of each sub-array, realize the accurate mapping of temperature information to operation instructions, and improve the flexibility and response accuracy of system control.

[0060] The drive generating subunit is used to generate a target read / write drive signal that matches the equivalent load of each sub-array based on the control signal.

[0061] In the actual implementation example, Figure 4 As shown, the drive generating subunit provided in the drive compensation unit can generate a read / write drive signal that matches the equivalent load of each subarray based on the control signal, wherein the frequency of the drive signal is consistent with the output frequency of the dynamic frequency modulation compensation module 200, thereby realizing real-time automatic control of the drive voltage based on temperature compensation.

[0062] The real-time temperature compensation module 400 is used to generate a temperature compensation value of the ferroelectric memory array according to the operating frequency and real-time operating voltage of the ferroelectric memory array, so as to perform multivariate real-time temperature compensation on the ferroelectric memory based on the temperature compensation value.

[0063] In some embodiments, the real-time temperature compensation module 400 provided in the embodiments of the present application can generate a temperature compensation value of the ferroelectric memory array based on the operating frequency and real-time operating voltage of the ferroelectric memory array, thereby making a multi-dimensional comprehensive compensation decision on the temperature of the ferroelectric memory array, thereby realizing multi-dimensional real-time temperature compensation of the ferroelectric memory, significantly improving the compensation accuracy and system stability, and enhancing the reliability and energy efficiency performance of the ferroelectric memory in a complex temperature change environment.

[0064] Optionally, in one embodiment of the present application, the system 10 of the embodiment of the present application further includes: a static voltage compensation module.

[0065] The static voltage compensation module is used to compensate the reference voltage and the read voltage of the ferroelectric memory array to a zero temperature coefficient voltage.

[0066] As a possible way to achieve this, Figure 5 As shown, the embodiment of the present application can be provided with a static voltage compensation module, which can compensate the reference voltage and the read voltage of the ferroelectric memory array to a zero temperature coefficient voltage. Specifically, the static voltage compensation module is composed of a reference voltage compensation unit and a read voltage compensation unit, wherein the sensitive amplifier is the direct action object of the static voltage compensation module. Before the read enable signal arrives, the static voltage compensation module of the sensitive amplifier and the memory array remains in a silent closed state to reduce the static power consumption of the system; in the read initialization phase after the read enable signal arrives, the sensitive amplifier is connected to the static voltage compensation module to pre-compensate the voltage to be compared with the reference voltage; in the read phase, the selected ferroelectric memory cell is connected to the read circuit, and the input signals processed by the sensitive amplifier are all compensated zero temperature coefficient signals, which ensures the temperature consistency of the sensitive amplifier read window, and can still ensure high read accuracy when the temperature changes.

[0067] In an embodiment of the present application, a static voltage compensation strategy is set in the static voltage compensation module, that is, a temperature compensation strategy for the reference voltage and read voltage of the ferroelectric memory system. The reference voltage and the voltage to be compared are both derived from the ferroelectric capacitor. Temperature changes will directly affect the electrical characteristics of the ferroelectric memory cell, thereby affecting the reference voltage and the voltage to be compared during the read operation. In the comparison operation of the sensitive amplifier, the relative voltage difference is more worthy of attention than the absolute voltage input value. Therefore, if only one of the reference voltage or the voltage to be compared is compensated, the comparison window of the sensitive amplifier will still drift with temperature changes. In order to ensure that the comparison window of the sensitive amplifier will not shrink due to temperature changes, the present application simultaneously compensates the two voltages (reference voltage and voltage to be compared) to a zero temperature coefficient voltage, thereby ensuring the read and write accuracy without the need to design an additional high-sensitivity sensitive amplifier.

[0068] According to the integrated multi-element real-time temperature compensation system for ferroelectric memory proposed in the embodiment of the present application, the temperature information of each sub-array in the ferroelectric memory array and the relative position between each sub-array can be detected by the built-in temperature detection module, and the maximum temperature of each sub-array in the ferroelectric memory array can be determined. Then, the operating frequency of the ferroelectric memory array can be dynamically adjusted by the dynamic frequency modulation compensation module, and the target read and write drive signal is matched to each sub-array by the dynamic drive compensation module to adjust the real-time operating voltage of each sub-array. Secondly, based on the real-time temperature compensation module, the temperature compensation value is generated according to the operating frequency and real-time operating voltage of the ferroelectric memory array, thereby performing multi-element real-time temperature compensation on the ferroelectric memory, effectively improving the efficiency and stability of the ferroelectric memory in complex working environments. Thus, the high power consumption and cost of the temperature compensation method of the ferroelectric memory in the related art are solved, and the high efficiency and stability of the ferroelectric memory in complex working environments are reduced.

[0069] in, Figure 6 A flow chart of an integrated multi-element real-time temperature compensation method for ferroelectric memory provided in an embodiment of the present application.

[0070] like Figure 6 As shown, the integrated multivariate real-time temperature compensation method for ferroelectric memory includes the following steps:

[0071] In step S601, the temperature information of each sub-array in the ferroelectric memory array divided based on the ferroelectric memory and the relative position between each sub-array are detected, and the maximum temperature of each sub-array in the ferroelectric memory array is determined.

[0072] In step S602, a corresponding frequency control signal is generated according to the maximum temperature, so as to dynamically adjust the operating frequency of the ferroelectric memory array using the frequency control signal.

[0073] Optionally, in one embodiment of the present application, the operating frequency of the ferroelectric memory array is dynamically controlled using a frequency control signal, including: converting the temperature information of each sub-array in the ferroelectric memory array into frequency information; determining a frequency control signal using the frequency information; and generating a read / write control signal corresponding to the highest temperature of each sub-array in the ferroelectric memory array based on the frequency control signal and a target read / write enable signal, so as to dynamically control the operating frequency of the ferroelectric memory array according to the read / write control signal.

[0074] In step S603 , based on the temperature information and the relative position, a target read / write driving signal is matched to each sub-array, so as to adjust the real-time operating voltage of each sub-array according to the target read / write driving signal.

[0075] In one embodiment of the present application, regulating the real-time operating voltage of each subarray according to the target read / write drive signal includes: packaging the temperature information and relative position of each subarray to obtain packaged information; and matching the target read / write drive signal to each subarray based on the packaged information to regulate the real-time operating voltage of each subarray according to the target read / write drive signal.

[0076] In step S604 , a temperature compensation value of the ferroelectric memory array is generated according to the operating frequency and the real-time operating voltage of the ferroelectric memory array, so as to perform multivariate real-time temperature compensation on the ferroelectric memory based on the temperature compensation value.

[0077] It should be noted that the above explanation of the embodiment of the integrated multi-element real-time temperature compensation system for ferroelectric memory is also applicable to the integrated multi-element real-time temperature compensation method for ferroelectric memory of this embodiment, and will not be repeated here.

[0078] According to the integrated multi-element real-time temperature compensation method for ferroelectric memory proposed in the embodiment of the present application, the temperature information of each sub-array in the ferroelectric memory array and the relative position between each sub-array can be detected by the built-in temperature detection module, and the maximum temperature of each sub-array in the ferroelectric memory array can be determined. Then, the operating frequency of the ferroelectric memory array can be dynamically adjusted by the dynamic frequency modulation compensation module, and the target read and write drive signal is matched to each sub-array by the dynamic drive compensation module to adjust the real-time operating voltage of each sub-array. Secondly, based on the real-time temperature compensation module, the temperature compensation value is generated according to the operating frequency and real-time operating voltage of the ferroelectric memory array, thereby performing multi-element real-time temperature compensation on the ferroelectric memory, effectively improving the efficiency and stability of the ferroelectric memory in complex working environments. Thus, the high power consumption and cost of the temperature compensation method of the ferroelectric memory in the related art are solved, and the high efficiency and stability of the ferroelectric memory in complex working environments are reduced.

[0079] Figure 7 This is a schematic diagram of the structure of an electronic device provided in an embodiment of the present application. The electronic device may include:

[0080] Memory 701 , processor 702 , and computer programs stored in the memory 701 and executable on the processor 702 .

[0081] When the processor 702 executes the program, the integrated multi-element real-time temperature compensation method for ferroelectric memory provided in the above embodiment is implemented.

[0082] Furthermore, the electronic device further includes:

[0083] The communication interface 703 is used for communication between the memory 701 and the processor 702 .

[0084] The memory 701 is used to store computer programs that can be run on the processor 702 .

[0085] The memory 701 may include a high-speed RAM memory, and may also include a non-volatile memory (non-volatile memory), such as at least one disk memory.

[0086] If the memory 701, processor 702, and communication interface 703 are implemented independently, the communication interface 703, memory 701, and processor 702 can be interconnected via a bus and communicate with each other. The bus can be an Industry Standard Architecture (ISA) bus, a Peripheral Component Interconnect (PCI) bus, or an Extended Industry Standard Architecture (EISA) bus. Buses can be divided into address buses, data buses, control buses, etc. For ease of representation, Figure 7 Only one thick line is used in the diagram, but this does not mean that there is only one bus or one type of bus.

[0087] Optionally, in a specific implementation, if the memory 701, the processor 702 and the communication interface 703 are integrated on a chip, the memory 701, the processor 702 and the communication interface 703 can communicate with each other through an internal interface.

[0088] The processor 702 may be a central processing unit (CPU), an application specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of the present application.

[0089] This embodiment further provides a computer-readable storage medium having a computer program stored thereon. When the program is executed by a processor, the above-mentioned integrable multi-element real-time temperature compensation method for ferroelectric memory is implemented.

[0090] This embodiment further provides a computer program product, including a computer program. When the computer program is executed, it is used to implement the above-mentioned integrable multi-element real-time temperature compensation method for ferroelectric memory.

[0091] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or N embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.

[0092] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of technical features indicated. Thus, a feature specified as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of this application, "N" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0093] Any process or method description in a flowchart or otherwise described herein may be understood to represent a module, fragment or portion of code comprising one or N executable instructions for implementing a custom logical function or process step, and the scope of the preferred embodiments of the present application includes alternative implementations in which functions may be performed in a different order than shown or discussed, including performing functions in a substantially simultaneous manner or in a reverse order depending on the functions involved, which should be understood by those skilled in the art to which the embodiments of the present application pertain.

[0094] The logic and / or steps represented in the flowcharts or otherwise described herein, for example, can be considered as a sequenced list of executable instructions for implementing the logical functions, and can be embodied in any computer-readable medium for use by, or in conjunction with, an instruction execution system, apparatus, or device (e.g., a computer-based system, a system including a processor, or other system that can fetch and execute instructions from an instruction execution system, apparatus, or device). For purposes of this specification, a "computer-readable medium" can be any device that can contain, store, communicate, propagate, or transport a program for use by, or in conjunction with, an instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of computer-readable media include the following: an electrical connection with one or N wires (electronic devices), a portable computer disk cartridge (magnetic device), a random access memory (RAM), a read-only memory (ROM), an erasable and programmable read-only memory (EPROM or flash memory), a fiber optic device, and a portable compact disc read-only memory (CDROM). In addition, the computer-readable medium may even be paper or other suitable medium on which the program is printed, since the program can be obtained electronically by optically scanning the paper or other medium and then editing, interpreting or processing it in other suitable ways as necessary, and then storing it in a computer memory.

[0095] It should be understood that various parts of the present application can be implemented using hardware, software, firmware, or a combination thereof. In the above embodiment, the N steps or methods can be implemented using software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented using hardware, as in another embodiment, it can be implemented using any one or a combination of the following technologies known in the art: a discrete logic circuit having a logic gate circuit for implementing a logic function on a data signal, an application-specific integrated circuit having a suitable combination of logic gate circuits, a programmable gate array (PGA), a field programmable gate array (FPGA), etc.

[0096] Those skilled in the art will understand that all or part of the steps in the method of the above embodiment can be completed by instructing related hardware through a program, and the program can be stored in a computer-readable storage medium. When the program is executed, it includes one or a combination of the steps of the method embodiment.

[0097] In addition, the functional units in the various embodiments of the present application may be integrated into a processing module, or each unit may exist physically separately, or two or more units may be integrated into a module. The above-mentioned integrated module may be implemented in the form of hardware or in the form of a software functional module. If the integrated module is implemented in the form of a software functional module and sold or used as an independent product, it may also be stored in a computer-readable storage medium.

[0098] The storage medium mentioned above may be a read-only memory, a magnetic disk, or an optical disk, etc. Although the embodiments of the present application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present application. Persons skilled in the art may make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present application.

Claims

1. An integrable multi-element real-time temperature compensation system for ferroelectric memory, characterized in that: include: A built-in temperature detection module is used to detect the temperature information of each sub-array in the ferroelectric memory array divided based on the ferroelectric memory and the relative position between each sub-array, and to determine the maximum temperature of each sub-array in the ferroelectric memory array; a dynamic frequency modulation compensation module, configured to generate a corresponding frequency control signal according to the maximum temperature, so as to dynamically adjust the operating frequency of the ferroelectric memory array using the frequency control signal; a dynamic drive compensation module, configured to match a target read / write drive signal to each sub-array based on the temperature information and the relative position, so as to regulate a real-time operating voltage of each sub-array according to the target read / write drive signal; The real-time temperature compensation module is used to generate a temperature compensation value of the ferroelectric memory array according to the operating frequency and the real-time operating voltage of the ferroelectric memory array, so as to perform multivariate real-time temperature compensation on the ferroelectric memory based on the temperature compensation value.

2. The system according to claim 1, wherein: Also includes: The static voltage compensation module is used to compensate the reference voltage and the read voltage of the ferroelectric memory array to a zero temperature coefficient voltage.

3. The system according to claim 1, wherein: The dynamic frequency modulation compensation module includes: A frequency control unit, configured to convert temperature information of each sub-array in the ferroelectric memory array into frequency information; a clock generating unit, configured to determine the frequency control signal using the frequency information; A read / write control signal generating unit is configured to generate a read / write control signal corresponding to the maximum temperature of each sub-array in the ferroelectric memory array based on the frequency control signal and the target read / write enable signal, so as to dynamically control the operating frequency of the ferroelectric memory array according to the read / write control signal.

4. The system according to claim 1, wherein: The dynamic drive compensation module includes: a temperature analysis unit, configured to package the temperature information and relative position of each sub-array to obtain packaged information; A driving compensation unit is configured to match the target read / write driving signal to each sub-array based on the packaged information, so as to adjust the real-time operating voltage of each sub-array according to the target read / write driving signal.

5. The system according to claim 4, characterized in that The driving compensation unit includes: an analog-to-digital converter, configured to convert the temperature information of each sub-array into a digital signal; a control subunit, configured to encode the digital signal into a control signal for each subarray; The drive generating subunit is configured to generate the target read / write drive signal that matches the equivalent load of each sub-array based on the control signal.

6. An integrated multi-element real-time temperature compensation method for ferroelectric memory, characterized in that: The integrable multi-element real-time temperature compensation system for ferroelectric memory according to any one of claims 1 to 5 is used, wherein the method comprises the following steps: Detecting temperature information of each sub-array in a ferroelectric memory array divided based on ferroelectric memory and relative positions between the sub-arrays, and determining the maximum temperature of each sub-array in the ferroelectric memory array; generating a corresponding frequency control signal according to the maximum temperature, so as to dynamically adjust the operating frequency of the ferroelectric memory array by using the frequency control signal; matching a target read / write drive signal to each sub-array based on the temperature information and the relative position, so as to regulate a real-time operating voltage of each sub-array according to the target read / write drive signal; A temperature compensation value of the ferroelectric memory array is generated according to the operating frequency and the real-time operating voltage of the ferroelectric memory array, so as to perform multivariate real-time temperature compensation on the ferroelectric memory based on the temperature compensation value.

7. The method according to claim 6, characterized in that The dynamically regulating the operating frequency of the ferroelectric memory array by using the frequency control signal includes: converting the temperature information of each sub-array in the ferroelectric memory array into frequency information; Determining the frequency control signal using the frequency information; Based on the frequency control signal and the target read / write enable signal, a read / write control signal corresponding to the maximum temperature of each sub-array in the ferroelectric memory array is generated to dynamically control the operating frequency of the ferroelectric memory array according to the read / write control signal.

8. An electronic device, characterized in that: include: A memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the integrable multivariate real-time temperature compensation method for ferroelectric memory as described in any one of claims 6 to 7.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: The program is executed by a processor to implement the integrable multi-element real-time temperature compensation method for ferroelectric memory according to any one of claims 6 to 7.

10. A computer program product comprising a computer program, characterized in that The computer program is executed by a processor to implement the integrable multi-element real-time temperature compensation method for ferroelectric memory according to any one of claims 6 to 7.

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