High-throughput thin film manufacturing equipment and manufacturing method thereof

Abstract

The invention provides high-flux film manufacturing equipment and a manufacturing method thereof, and the equipment is provided with a wafer bearing cavity and a plurality of carrier gas rectification cavities, so that the wafer bearing cavity is connected with each carrier gas rectification cavity, each carrier gas rectification cavity is disposed in the wafer bearing cavity in a protruding manner, and the projection of each carrier gas rectification cavity in the vertical direction is located in the wafer bearing cavity. According to the technical scheme, the carrier gas rectification cavities are arranged on the substrate, and the gas-phase reaction units capable of realizing balance are arranged in the carrier gas rectification cavities, so that a stable gas-phase reaction source can be provided for the corresponding wafers, the wafers are well isolated from the outside in the gas-phase reaction process, the process control difficulty can be reduced, the uniformity of prepared films is improved, and the process procedures of the wafers do not interfere with one another.

Description

Technical Field

[0001] The invention belongs to the technical field of thin film manufacturing and relates to high-throughput thin film manufacturing equipment and a manufacturing method thereof. Background Art

[0002] In thin film manufacturing technology, traditional thin film manufacturing equipment uses only one set of process conditions during a single process cycle, which requires significant time and cost for the preparation and testing of multi-component materials. This necessitates the use of high-throughput thin film manufacturing equipment, which can produce a large number of elemental combinations in a short period of time, enabling more efficient and comprehensive research on multi-component materials.

[0003] However, during the gas-phase reaction process, existing high-throughput thin-film manufacturing equipment cannot effectively isolate the local area of ​​the wafer from the outside world, making it difficult to provide an independent and stable local manufacturing environment. This results in the low uniformity of the prepared high-throughput thin films, such as film composition uniformity, film thickness uniformity, film morphology uniformity, etc., which will have a huge adverse impact on the research and application of thin films.

[0004] Therefore, there is an urgent need to develop new high-throughput thin film manufacturing equipment and manufacturing methods. Summary of the Invention

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a high-throughput thin film manufacturing equipment and a manufacturing method thereof, which are used to solve the problems of thin film uniformity and process interference in multi-wafer processes in high-throughput thin film manufacturing in the prior art.

[0006] To achieve the above-mentioned and other related purposes, the present invention provides a high-throughput thin film manufacturing device, comprising:

[0007] A cavity, the cavity comprising a wafer-carrying cavity and M carrier gas rectifying cavities that are interconnected, each of the carrier gas rectifying cavities being located above the wafer-carrying cavity, and each of the carrier gas rectifying cavities having a vertical projection located within the wafer-carrying cavity;

[0008] A wafer carrying unit, located in the wafer carrying cavity, for carrying the wafer and driving the wafer to move;

[0009] A gas phase reaction unit is provided in the carrier gas rectifying chamber, corresponding one to the carrier gas rectifying chamber and completely covering the corresponding wafer along the vertical projection. Each gas phase reaction unit provides an isolation gas zone, a gas recycle zone and a reaction gas zone from the outside to the inside to the corresponding wafer. The isolation gas zone and the reaction gas zone are balanced by the gas recycle zone to provide a stable gas phase reaction source to the corresponding wafer.

[0010] Optionally, in the same gas-phase reaction unit, the corresponding isolation gas zone, the gas withdrawal zone, and the reaction gas zone act on the wafer at the same height.

[0011] Optionally, in the same gas-phase reaction unit, the corresponding isolation gas zone, the gas withdrawal zone and the reaction gas zone act on the wafer at heights in a stepped manner.

[0012] Optionally, the gas phase reaction unit comprises a shower head.

[0013] Optionally, the wafer carrying unit drives the wafer to move in one or a combination of translation, rotation and lifting.

[0014] Optionally, the wafer carrying unit further includes a wafer carrier corresponding to each wafer, and each wafer carrier drives the corresponding wafer to move, and the operation mode includes one or a combination of translation, rotation and lifting.

[0015] Optionally, a measurement module is further provided in the wafer carrying cavity for detecting and characterizing the thin film manufactured on the surface of the wafer.

[0016] Optionally, the cavity has a convex shape, or a mouth shape, and the wafer carrying cavity and the carrier gas rectifying cavity are divided by an internal isolation wall.

[0017] Optionally, the high-throughput thin film manufacturing equipment includes a high-throughput thin film etching equipment or a high-throughput thin film deposition equipment.

[0018] The present invention also provides a method for manufacturing a high-flux film, comprising the following steps:

[0019] 1) Providing a high-throughput thin film manufacturing device as described in any of the above solutions;

[0020] 2) Using the gas phase reaction unit to provide a stable gas phase reaction source to the wafers, forming a thin film on the surface of each corresponding wafer.

[0021] As described above, the high-throughput thin film manufacturing equipment and the manufacturing method thereof of the present invention are provided with a wafer carrying cavity and a plurality of carrier gas rectifying cavities, so that the wafer carrying cavity is interconnected with each carrier gas rectifying cavity, and each carrier gas rectifying cavity is protruded from the wafer carrying cavity and the vertical projection of each carrier gas rectifying cavity is located in the wafer carrying cavity, and a gas phase reaction unit that can achieve balance is provided in each carrier gas rectifying cavity, so as to provide a stable gas phase reaction source to the corresponding wafer, so as to achieve good isolation of the wafer from the outside world during the gas phase reaction process, thereby reducing the difficulty of process control, improving the uniformity of thin film preparation, and ensuring that the process procedures between wafers do not interfere with each other. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 Shown is a schematic structural diagram of a high-throughput thin film manufacturing device provided in a comparative example of the present invention.

[0023] Figure 2 Display as Figure 1 Schematic diagram of the top view of the high-throughput thin film manufacturing equipment provided in.

[0024] Figure 3 Shown is a structural schematic diagram of a high-throughput thin film manufacturing device provided in Example 1 of the present invention.

[0025] Figure 4 Display as Figure 3 Schematic diagram of the top view of the high-throughput thin film manufacturing equipment provided in.

[0026] Figure 5 Shown is a schematic structural diagram of another high-throughput thin film manufacturing device provided in Example 1 of the present invention.

[0027] Figure 6 Shown is a structural schematic diagram of another high-throughput thin film manufacturing equipment provided in Example 1 of the present invention.

[0028] Figure 7 Display as Figure 6 Schematic diagram of the top view of the high-throughput thin film manufacturing equipment provided in.

[0029] Figure 8 Shown is a process flow chart for manufacturing a high-flux thin film in Example 1 of the present invention.

[0030] Figure 9 The figure shows a comparison of the film thickness distribution formed by the high-throughput film manufacturing equipment provided in the comparative example of the present invention and the embodiment 1.

[0031] Figure 10 The figure shows a comparison of the film thickness distribution formed by the high-throughput film manufacturing equipment provided in the comparative example of the present invention and the embodiment 1.

[0032] Figure 11 Shown is a schematic structural diagram of a high-throughput thin film manufacturing device provided in Example 2 of the present invention.

[0033] Figure 12 Display as Figure 11 Schematic diagram of the distribution of wafers in the high-throughput thin film manufacturing equipment provided in.

[0034] Figure 13 Display as Figure 11 Schematic diagram of the distribution of various gas-phase reaction units in the high-throughput thin film manufacturing equipment provided in.

[0035] Description of Reference Numerals

[0036] 10, 100 cavity

[0037] 101 Wafer Carrying Cavity

[0038] 102 carrier gas rectifier cavity

[0039] 20, 200 wafer loading unit

[0040] 30, 300 wafers

[0041] 40, 400 gas phase reaction unit

[0042] 41, 401 Isolation gas area

[0043] 42, 402 gas recirculation area

[0044] 43, 403 Reaction gas zone

[0045] 50, 501 cavity wall

[0046] 502 horizontal inner wall

[0047] 503 Showerhead

[0048] 504 vertical inner wall

[0049] 51, 510 gas holes

[0050] 60, 600 measurement modules DETAILED DESCRIPTION

[0051] The following describes the embodiments of the present invention through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different viewpoints and applications without departing from the spirit of the present invention.

[0052] The structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification so as to facilitate understanding and reading by those familiar with this technology. They are not used to limit the conditions for implementation of the present invention and therefore have no substantial technical significance. Any modification of the structure, change in the proportion relationship, or adjustment of the size should still fall within the scope of the technical content disclosed by the present invention without affecting the efficacy and purpose of the present invention. At the same time, the terms such as "upper", "lower", "left", "right", "middle" and "one" quoted in this specification are only for the convenience of description and are not used to limit the scope of implementation of the present invention. Changes or adjustments in their relative relationships should also be regarded as the scope of implementation of the present invention without substantially changing the technical content.

[0053] Comparative Example

[0054] like Figure 1 and Figure 2 , this comparative example provides a high-throughput thin film manufacturing device, which includes a chamber 10, a wafer carrying unit 20 and a gas-phase reaction unit 40, wherein the chamber 10 is composed of a chamber wall 50; the wafer carrying unit 20 is located in the chamber 10, for carrying the wafer 30 and driving the wafer 30 to operate; the gas-phase reaction unit 40 is located in the chamber 10 and covers a local area of ​​the wafer 30 along the vertical projection, and the gas-phase reaction unit 40 provides the wafer 30 with an isolation gas zone 41, a gas withdrawal zone 42 and a reaction gas zone 43 from the outside to the inside, for providing a gas-phase reaction source to the wafer 30.

[0055] In this comparative example, the gas phase reaction unit 40 having the isolation gas zone 41, the gas recycle zone 42 and the reaction gas zone 43 is provided in the chamber 10. However, since the gas phase reaction unit 40 is provided on the chamber wall 50, as shown in FIG. Figure 1 and Figure 2As shown in the figure, the gas-phase reaction unit 40 uses a shower head with a gas through hole 51 to provide a gas-phase reaction source into the chamber 10, and the gas through holes 51 corresponding to the isolation gas zone 41, the gas withdrawal zone 42 and the reaction gas zone 43 and the spacing between the chamber wall 50 and the wafer 30 are equal, that is, they are all of height H. Therefore, when the reaction gas is introduced into the chamber 10 through the reaction gas zone 43, the isolation gas is introduced into the chamber 10 through the isolation gas zone 41, and the gas withdrawal operation is performed through the gas withdrawal zone 42, due to the small spacing between the gas-phase reaction unit 40 and the wafer 30, the airflow disturbance outside the effective range of the gas-phase reaction unit 40 in the chamber 10 is very likely to affect the gas-phase reaction process, and the controllability is poor, thereby causing a greater impact on the stability of the reaction in the effective area of ​​the gas-phase reaction unit 40, and it is difficult to achieve the gas-phase reaction unit 40 providing a stable gas-phase reaction source to the wafer 30.

[0056] Example 1

[0057] like Figure 3 and Figure 4 The present embodiment provides a high-throughput thin film manufacturing device, which includes a chamber 100, a wafer carrying unit 200 and a gas phase reaction unit 400, wherein the chamber 100 includes a wafer carrying chamber 101 and a carrier gas rectifying chamber 102 that are interconnected, the carrier gas rectifying chamber 102 is located above the wafer carrying chamber 101, and the vertical projection of the carrier gas rectifying chamber 102 is located in the wafer carrying chamber 101; the wafer carrying unit 200 is located in the wafer carrying chamber 101, and is used to To carry the wafer 300 and drive the wafer to run; the gas phase reaction unit 400 is located in the carrier gas rectification chamber 102 and covers a local area of ​​the wafer 300 along the vertical projection, and the gas phase reaction unit 400 provides the wafer 300 from the outside to the inside, including an isolation gas area 401, a gas recycle area 402 and a reaction gas area 403. The isolation gas area 401 and the reaction gas area 403 are balanced by the gas recycle area 402 to provide a stable gas phase reaction source to the wafer 300.

[0058] like Figure 3 and Figure 4 As shown in FIG. 5 , in this embodiment, the gas phase reaction unit 400 uses a shower head with a gas through hole 510 to provide a gas phase reaction source into the cavity 100 . However, the type of the gas phase reaction unit 400 is not limited thereto and can be configured as needed.

[0059] It should be noted that the area where the gas through holes 510 in the isolation gas zone 401, the gas withdrawal zone 402 and the reaction gas zone 403 corresponding to the carrier gas rectifying chamber 102 are at the maximum distance from the wafer 300, that is, the area with the gas through holes 510 located at the highest point is defined as the top of the carrier gas rectifying chamber 102. In this embodiment, in order to provide a stable gas-phase reaction source to the wafer 300, the difference between the high-throughput thin film manufacturing equipment and the high-throughput thin film manufacturing equipment in the comparative example is that: in this embodiment, the cavity 100 is divided into two interconnected chambers, namely the wafer carrying cavity 101 and the carrier gas rectifying cavity 102, and the carrier gas rectifying cavity 102 is protruded from the wafer carrying cavity 101, that is, there is a height difference △H between the carrier gas rectifying cavity 102 and the wafer carrying cavity 101, so that the position of the gas through hole 510 in any area of ​​the isolation gas zone 401, the gas withdrawal zone 402 and the reaction gas zone 403 corresponding to the carrier gas rectifying cavity 102 is greater than the distance between the top wall of the wafer carrying cavity 101 and the wafer 300.

[0060] like Figure 3 As shown, in this embodiment, the gas through holes 510 corresponding to the isolation gas zone 401, the gas withdrawal zone 402 and the reaction gas zone 403 are at the same horizontal position, then ΔH is the difference between the position of the gas through hole 510 of the isolation gas zone 401 corresponding to the carrier gas rectifying chamber 102 and the distance between the wafer 300 and the distance between the top wall of the wafer carrying chamber 101 and the wafer 300, that is, the height difference ΔH, that is, the technical defect that the space provided by the wafer carrying chamber 101 is insufficient to adjust the reaction gas flow. The present application achieves the technical effect of manufacturing a film of uniform thickness by providing the protruding space of the carrier gas rectifying chamber 102 to adjust the reaction gas flow.

[0061] In another embodiment, Figure 5 The gas through holes 510 in the isolation gas zone 401, the gas retraction zone 402 and the reaction gas zone 403 corresponding to the carrier gas rectifying chamber 102 may not be located at the same horizontal position, that is, the isolation gas zone 401, the gas retraction zone 402 and the reaction gas zone 403 may have different height differences △H from the wafer carrying chamber 101, but the difference between the distance between the gas through hole 510 corresponding to the lowest area in the carrier gas rectifying chamber 102 and the wafer 300 and the distance between the top wall of the wafer carrying chamber 101 and the wafer 300 is greater than 0, that is, the height difference △H>0, thereby forming an outwardly convex carrier gas rectifying chamber 102.

[0062] The gas phase reaction unit 400 is located in the carrier gas rectifying chamber 102 and covers a local area of ​​the wafer 300 along the vertical projection, providing the wafer 300 with an active area including the isolation gas area 401, the gas recirculation area 402 and the reaction gas area 403 from the outside to the inside.

[0063] In this embodiment, when the reaction gas is introduced through the reaction gas zone 403 and the isolation gas is introduced through the isolation gas zone 401, and the gas is withdrawn through the gas withdrawal zone 402, similarly, since the distance between the position of the gas through hole 510 in any area of ​​the isolation gas zone 401, the gas withdrawal zone 402 and the reaction gas zone 403 corresponding to the carrier gas rectification chamber 102 and the wafer 300 is greater than the distance between the top wall of the wafer carrying chamber 101 and the wafer 300, that is, there is a height difference △H, so that the airflow disturbance outside the effective range of the gas phase reaction unit 400 in the cavity 100 is difficult to affect the gas phase reaction process, the isolation gas zone 401 and the reaction gas zone 403 can achieve balance through the gas withdrawal zone 402, and the controllability is relatively high, and it is easy to realize that the gas phase reaction unit 400 provides a stable gas phase reaction source to the wafer 300.

[0064] As required, the size and shape of each region in the isolation gas region 401, the gas withdrawal region 402 and the reaction gas region 403 can be adjusted as required. In this embodiment, Figure 4 , each area forms a concentric ring shape, but is not limited to this. If necessary, each area can also be square, elliptical, etc.

[0065] As required, the size, shape, and distribution density of the gas through holes 510 in each area can be adjusted as needed, and no excessive restrictions are imposed here.

[0066] In this embodiment, the distances between the gas through holes 510 corresponding to the isolation gas zone 401, the gas withdrawal zone 402 and the reaction gas zone 403 and the wafer 300 are equal, that is, the isolation gas zone 401, the gas withdrawal zone 402 and the reaction gas zone 403 are located in the same horizontal plane, so that the isolation gas zone 401, the gas withdrawal zone 402 and the reaction gas zone 403 act on the wafer 300 at the same height, but it is not limited to this. As needed, in another embodiment, Figure 5 As shown, the isolation gas area 401, the gas withdrawal area 402 and the reaction gas area 403 can also be arranged to be stepped, that is, the isolation gas area 401, the gas withdrawal area 402 and the reaction gas area 403 act on the wafer 300 at different heights, such as Figure 5In the figure, the isolation gas zone 401 and the reaction gas zone 403 have the same height difference, i.e., △H1, and are different from the height difference △H2 corresponding to the gas withdrawal zone 402, but it is not limited to this. The height differences △H corresponding to the isolation gas zone 401, the gas withdrawal zone 402 and the reaction gas zone 403 may also be different, and can be set specifically according to needs, which is not limited here.

[0067] In this embodiment, Figure 3 The cavity 100 has a convex shape, that is, the cavity 100 is formed by the cavity wall 501 and the shower head in a convex shape, but is not limited to this. According to needs, in another embodiment, Figure 6 and Figure 7 As shown, the shape of the cavity 100 may also be in the shape of a "mouth", that is, the cavity wall 501 forms a "mouth" shape, and the wafer carrying cavity 101 and the carrier gas rectifying cavity 102 are divided by the horizontal inner wall 502, the vertical inner wall 504 and the shower head 503 to provide a high-throughput thin film manufacturing equipment with a regular shape. The shape of the high-throughput thin film manufacturing equipment can be set as needed, and no excessive restrictions are made here.

[0068] As an example, the wafer carrying unit 200 may drive the wafer 300 to move in a manner that includes one or a combination of translation, rotation, and lifting.

[0069] like Figure 3 and Figure 4 In this embodiment, the projection center of the gas phase reaction unit 400 on the wafer 300 in the vertical direction does not coincide with the center O of the wafer 300, that is, there is an eccentric distance, so that the required local thin film can be formed in different areas of the wafer 300 by the translation and / or rotation of the wafer carrying unit 200, and the distance between the wafer 300 and the wafer carrying chamber 101 and the carrier gas rectifying chamber 102 can be changed by raising and lowering the wafer carrying unit 200 to meet the process requirements.

[0070] Furthermore, a measurement module 600 may be provided in the wafer carrying cavity 101 for detecting and characterizing the thin film manufactured on the surface of the wafer 300. For example, the measurement module 600 may include measurement components for detecting and characterizing the elemental composition, film thickness, and microstructure of the thin film formed on the surface of the wafer 300. The specific type of the measurement module 600 is not limited here. For example, a local heating element may be provided in the wafer carrying unit 200 to achieve local heating of the wafer 300 to meet the needs of the process. Of course, as needed, an integral heating element may also be provided in the wafer carrying unit 200 to achieve heating treatment of the entire wafer 300. This is not limited here.

[0071] As an example, the same high-throughput thin film manufacturing equipment can be configured to include N carrier gas rectifying chambers 102, such as N can be an integer such as 1, 2, 3, etc. When N is greater than 1, thin film preparation can be performed on different areas of the same wafer 300 at the same time, and due to the stability of the carrier gas rectifying chamber 102, the areas where the carrier gas rectifying chambers 102 act do not interfere with each other during the gas phase reaction, so as to achieve efficient preparation of high-quality thin films on the wafer 300. The value of N can be set as needed, and no excessive restrictions are imposed here.

[0072] As an example, the high-throughput thin film manufacturing equipment may include high-throughput thin film etching equipment or high-throughput thin film deposition equipment. For example, the high-throughput thin film manufacturing equipment may be ALD equipment, ALE equipment, CVD equipment, Etch equipment, etc., and no excessive restrictions are made here.

[0073] like Figure 8 This embodiment also provides a method for manufacturing a high-flux thin film, comprising the following steps:

[0074] S1: providing the above-mentioned high-throughput thin film manufacturing equipment;

[0075] S2: using the gas phase reaction unit 400 to provide a stable gas phase reaction source to the wafer 300 to form a thin film on a region of the wafer 300;

[0076] S3: Using the wafer carrying unit 200 to drive the wafer 300 to move, so as to form a thin film on another area of ​​the wafer 300;

[0077] S4: Repeat step S3 at least once to form thin films on a plurality of different regions of the wafer 300 .

[0078] The specific structure of the high-throughput thin film manufacturing equipment will not be described in detail here, and reference may be made to the above introduction to the high-throughput thin film manufacturing equipment.

[0079] See Figure 9 and Figure 10 A comparison diagram of the thickness distribution of thin films formed by the high-throughput thin film manufacturing apparatus in this embodiment and the high-throughput thin film manufacturing apparatus in the comparative example is shown.

[0080] Among them, the difference between the high-throughput thin film manufacturing equipment in this embodiment and the high-throughput thin film manufacturing equipment in the comparative example is only that: in the high-throughput thin film manufacturing equipment in this embodiment, the gas phase reaction unit 400 is convex, that is, there is a height difference △H between the carrier gas rectification chamber 102 and the wafer carrying chamber 101, while the gas phase reaction unit 40 of the high-throughput thin film manufacturing equipment in the comparative example is not convex, that is, there is only one different variable between the embodiment and the comparative example, that is, the height difference △H.

[0081] Specifically, Figure 9 (a) shows the film thickness distribution diagram formed by the high-throughput film manufacturing equipment in the comparative example. Figure 9 (b) shows the film thickness distribution diagram formed by the high-throughput film manufacturing equipment in this embodiment. Figure 9 (a) and Figure 9 (b) It can be seen that under the same process parameters, the height difference ΔH of the protruding gas phase reaction unit 400 directly affects the distribution uniformity of the formed thin film.

[0082] Among them, see Figure 9 (a) When the gas-phase reaction unit 40 does not have a height difference ΔH, changes in the airflow outside the area where the gas-phase reaction unit 40 acts on the wafer 30 directly affect the gas-phase reaction in the gas-phase reaction area, that is, the gas-phase reaction area is poorly isolated from the outside world. Changes in the external airflow affect the reaction process in the gas-phase reaction area and affect the uniformity of thin film formation, such as the uniformity of film thickness, the uniformity of film morphology, and the uniformity of film distribution.

[0083] On the other hand Figure 9 (b) Under the same process parameter conditions, when the gas-phase reaction unit 400 has a height difference ΔH, the gas-phase reaction unit 400 can achieve good balance, the reaction gas within the action range of the gas-phase reaction unit 400 will not overflow, and the airflow outside the isolation gas will not affect the reaction area, so that the airflow change acting on the periphery of the area of ​​the wafer 300 will not affect the gas-phase reaction in the reaction area, that is, the gas-phase reaction area is well isolated from the outside world, and the external airflow change does not affect the reaction process in the gas-phase reaction area, so that a uniform film can be formed, that is, the film thickness is uniform, the film morphology is uniform, and the film distribution is uniform.

[0084] It can be seen from this that the setting of the height difference △H of the gas-phase reaction unit directly affects the uniformity of the film. When the gas-phase reaction unit does not have the height difference △H, the active area of ​​the gas-phase reaction unit is easily affected by the airflow in the external area. When the gas-phase reaction unit has the height difference △H, there is no need to consider the influence of the external airflow. The internal balance of the active area of ​​the gas-phase reaction unit is stable and not affected by the outside world.

[0085] Further, such as Figure 10 (a) shows a film thickness distribution diagram formed by gradually increasing the gas volume outside the active area of ​​the gas phase reaction unit 40 along the arrow direction, i.e., from left to right, using the high-throughput film manufacturing equipment in the comparative example. Figure 10 (b) shows the film thickness distribution diagram formed by using the high-throughput film manufacturing equipment in the embodiment, along the arrow direction, that is, from left to right, so that the gas volume outside the active area of ​​the gas phase reaction unit 400 is gradually increased. Figure 10 (a) and Figure 10 (b) It can be seen that under the same process parameters, the height difference ΔH of the protruding gas phase reaction unit 400 directly affects the distribution uniformity of the formed thin film.

[0086] Among them, see Figure 10 (a) From left to right along the arrow direction, as the amount of gas outside the action area of ​​the gas phase reaction unit 40 increases, the area of ​​the uniform region of the formed film gradually decreases, the shape of the film is irregular, the thickness of the film varies greatly, and the process of forming the film is difficult to control.

[0087] On the other hand Figure 10 (b) Under the same process parameter conditions, the gas-phase reaction unit 400 can achieve a good balance. From left to right along the arrow direction, as the amount of gas outside the active area of ​​the gas-phase reaction unit 400 increases, the reaction gas within the active range of the gas-phase reaction unit 400 will not overflow, and the airflow outside the isolation gas will not affect the reaction area. Therefore, the change of the airflow outside the area acting on the wafer 300 will not affect the gas-phase reaction in the reaction area, that is, the gas-phase reaction area is well isolated from the outside world, and the change of the external airflow does not affect the reaction process in the gas-phase reaction area, so a uniform film can be formed, that is, the film thickness is uniform, the film morphology is uniform, and the film distribution is uniform.

[0088] Example 2

[0089] like Figures 11 to 13The present embodiment provides a high-throughput thin film manufacturing device, which includes a chamber 100, a wafer carrying unit 200 and a gas phase reaction unit 400, wherein the chamber 100 includes the wafer carrying chamber 101 and M independently arranged carrier gas rectifying chambers 102 that are interconnected, each of the carrier gas rectifying chambers 102 is located above the wafer carrying chamber 101, and the vertical projection of each of the carrier gas rectifying chambers 102 is located in the wafer carrying chamber 101; the wafer carrying unit 200 is located in the wafer carrying chamber 101 to carry wafers. 300 and drives the wafer 300 to operate; the gas phase reaction unit 400 is located in the carrier gas rectifying chamber 102 and corresponds to the carrier gas rectifying chamber 102 one by one and completely covers the corresponding wafer 300 along the vertical projection, and each gas phase reaction unit 400 provides the corresponding wafer 300 from the outside to the inside, including an isolation gas zone 401, a gas recycle zone 402 and a reaction gas zone 403, the isolation gas zone 401 and the reaction gas zone 403 are balanced by the gas recycle zone 402, so as to provide a stable gas phase reaction source to the corresponding wafer 300.

[0090] Among them, the wafers 300 and the gas phase reaction units 400 can correspond one to one. Of course, according to needs, when the space of the gas phase reaction unit 400 is larger, the same gas phase reaction unit 400 can also correspond to multiple wafers 300 at the same time. There is no excessive restriction here.

[0091] The difference between the second embodiment and the first embodiment is that: in the present embodiment, a plurality of independently arranged carrier gas rectifying chambers 102 are provided in the chamber 100, and each of the gas phase reaction units 400 located in the carrier gas rectifying chamber 102 completely covers the corresponding wafer 300 along the vertical projection.

[0092] like Figure 12 and Figure 13 In this embodiment, the carrier gas rectifying cavity 102 includes 9, that is, M is 9, but it is not limited thereto. M can also be 2, 3, 4, 6, etc., and is not overly restricted here. Figure 11 Can be regarded as along Figure 12 and Figure 13 Cross-sectional view along line A-A'.

[0093] In this embodiment, Figure 11 Region B in Example 1 Figure 6The high-throughput thin film manufacturing equipment in can achieve the same technical effect, that is, this embodiment can realize the uniform preparation of thin films on the surfaces of the corresponding wafers 300 through the protruding gas phase reaction units 400 in each of the carrier gas rectifier chambers 102, and each of the gas phase reaction units 400 can be independently controlled and achieve balance within the active area of ​​each corresponding wafer 300, so that the active areas corresponding to each gas phase reaction unit 400 can be non-interfering with each other, so as to realize efficient and uniform thin film preparation on multiple wafers 300 at the same time.

[0094] The structure and arrangement of the gas phase reaction unit 400 can be referred to in Example 1 and will not be described in detail here. The distribution of the gas phase reaction unit 400 can be arranged as required and will not be limited here.

[0095] In this embodiment, since the chamber 100 has multiple wafers 300 corresponding to the gas phase reaction unit 400, the wafers 300 corresponding to the same gas phase reaction unit 400 can be subjected to the same process conditions, and the wafers 300 corresponding to different gas phase reaction units 400 can be subjected to the same process conditions or different process conditions, or only part of the wafers 300 can be subjected to process operations.

[0096] The wafer carrying unit 200 for carrying the wafer 300 may drive the wafer 300 to move in a manner including translation, rotation, and lifting, or a combination thereof, as needed.

[0097] Furthermore, in order to achieve independent control of each of the wafers 300, the wafer carrying unit 200 may also include a wafer carrier (not shown) corresponding to the wafer 300, and each of the wafer carriers may drive the corresponding wafer 300 to operate independently, and the operation mode may include one or a combination of translation, rotation and lifting.

[0098] Furthermore, the wafer carrying unit 200 and / or the wafer stage may have a heating function to achieve unified and / or independent heating control of the wafer 300. The specific structure and type of the wafer carrying unit 200 and the wafer stage are not limited here.

[0099] In which, in the same gas-phase reaction unit 400, the heights of the corresponding isolation gas zone 401, the gas retraction zone 402 and the reaction gas zone 403 acting on the wafer 300 may be the same or in a stepped shape, and in different gas-phase reaction units 400, the heights of the isolation gas zone 401, the gas retraction zone 402 and the reaction gas zone 403 may be the same or different, and no excessive restrictions are imposed here.

[0100] This embodiment also provides a method for manufacturing a high-flux film, comprising the following steps:

[0101] S1: providing the high-throughput thin film manufacturing equipment;

[0102] S2 : using the gas phase reaction unit 400 to provide a stable gas phase reaction source to the wafers 300 , so as to form a thin film on the surface of each corresponding wafer 300 .

[0103] To sum up, the high-throughput thin film manufacturing equipment and the manufacturing method thereof of the present invention are provided with a wafer carrying cavity and multiple carrier gas rectifying cavities, so that the wafer carrying cavity and each carrier gas rectifying cavity are interconnected, and each carrier gas rectifying cavity is protruded from the wafer carrying cavity and the vertical projection of each carrier gas rectifying cavity is located in the wafer carrying cavity, and a gas phase reaction unit that can achieve balance is provided in each carrier gas rectifying cavity, so as to provide a stable gas phase reaction source to the corresponding wafer, so as to achieve good isolation of the wafer from the outside world during the gas phase reaction process, thereby reducing the difficulty of process control, improving the uniformity of thin film preparation, and preventing the process processes between wafers from interfering with each other.

[0104] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. A high-throughput thin film manufacturing device, characterized in that: The high-throughput thin film manufacturing equipment comprises: A cavity, the cavity comprising a wafer-carrying cavity and M carrier gas rectifying cavities that are interconnected, each of the carrier gas rectifying cavities being located above the wafer-carrying cavity, and each of the carrier gas rectifying cavities having a vertical projection located within the wafer-carrying cavity; A wafer carrying unit, located in the wafer carrying cavity, for carrying the wafer and driving the wafer to move; A gas phase reaction unit is provided in the carrier gas rectifying chamber, corresponding one to the carrier gas rectifying chamber and completely covering the corresponding wafer along the vertical projection. Each gas phase reaction unit provides an isolation gas zone, a gas recycle zone and a reaction gas zone from the outside to the inside to the corresponding wafer. The isolation gas zone and the reaction gas zone are balanced by the gas recycle zone to provide a stable gas phase reaction source to the corresponding wafer.

2. The high-throughput thin film manufacturing equipment according to claim 1, characterized in that: In the same gas-phase reaction unit, the corresponding isolation gas zone, the gas withdrawal zone, and the reaction gas zone act on the wafer at the same height.

3. The high-throughput thin film manufacturing equipment according to claim 1, characterized in that: In the same gas-phase reaction unit, the corresponding isolation gas zone, the gas withdrawal zone, and the reaction gas zone act on the wafer at heights in a step-like manner.

4. The high-throughput thin film manufacturing equipment according to claim 1, characterized in that: The gas phase reaction unit includes a shower head.

5. The high-throughput thin film manufacturing equipment according to claim 1, characterized in that: The wafer carrying unit drives the wafer to move in one of the following ways: translation, rotation, and lifting, or a combination thereof.

6. The high-throughput thin film manufacturing equipment according to claim 1, characterized in that: The wafer carrying unit also includes a wafer carrier corresponding to each wafer, and each wafer carrier drives the corresponding wafer to move, and the operation mode includes one or a combination of translation, rotation and lifting.

7. The high-throughput thin film manufacturing equipment according to claim 1, characterized in that: A measurement module is also provided in the wafer carrying cavity for detecting and characterizing the thin film manufactured on the surface of the wafer.

8. The high-throughput thin film manufacturing equipment according to claim 1, characterized in that: The shape of the cavity is a "convex" shape, or the shape of the cavity is a "mouth" shape, and the wafer carrying cavity and the carrier gas rectifying cavity are divided by an internal isolation wall.

9. The high-throughput thin film manufacturing equipment according to claim 1, characterized in that: The high-throughput thin film manufacturing equipment includes a high-throughput thin film etching equipment or a high-throughput thin film deposition equipment.

10. A method for manufacturing a high-flux thin film, characterized in that: The following steps are involved: 1) Providing a high-throughput thin film manufacturing apparatus according to any one of claims 1 to 9; 2) Using the gas phase reaction unit to provide a stable gas phase reaction source to the wafers, forming a thin film on the surface of each corresponding wafer.

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