Multi-channel thin film manufacturing equipment and thin film manufacturing method

Abstract

According to the multi-channel film manufacturing equipment and the film manufacturing method, the wafer bearing cavity and the carrier gas rectifying cavity are arranged, so that the wafer bearing cavity is connected with the carrier gas rectifying cavity, the vertical projection of the carrier gas rectifying cavity is located in the wafer bearing cavity, and the gas phase reaction unit capable of achieving balance is arranged in the carrier gas rectifying cavity; the gas-phase reaction unit provides an isolation gas area, a gas pumping-back area and a reaction gas area from outside to inside, and the distance between the reaction gas area and the wafer bearing unit is greater than the distance between the top wall of the wafer bearing cavity and the wafer bearing unit, so that a stable gas-phase reaction source can be provided for the corresponding local wafer; good isolation between the local area of the wafer and the outside in the gas-phase reaction process is achieved, so that the process control difficulty can be reduced, and the uniformity of the prepared film is improved.

Description

Technical Field

[0001] The invention belongs to the technical field of thin film manufacturing, and relates to multi-channel thin film manufacturing equipment and a thin film manufacturing method. Background Art

[0002] In thin film manufacturing technology, traditional thin film manufacturing equipment uses only one set of process conditions during a single process cycle, which requires significant time and cost for the preparation and testing of multi-component materials. This necessitates the use of high-throughput thin film manufacturing equipment, which can produce a large number of elemental combinations in a short period of time, enabling more efficient and comprehensive research on multi-component materials.

[0003] However, during the gas-phase reaction process, existing high-throughput thin-film manufacturing equipment cannot effectively isolate the local area of ​​the wafer from the outside world, making it difficult to provide an independent and stable local manufacturing environment. This results in the low uniformity of the prepared high-throughput thin films, such as film composition uniformity, film thickness uniformity, film morphology uniformity, etc., which will have a huge adverse impact on the research and application of thin films.

[0004] Therefore, there is an urgent need to develop new multi-channel thin film manufacturing equipment and thin film manufacturing methods. Summary of the Invention

[0005] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a multi-channel thin film manufacturing device and a thin film manufacturing method for solving the problem of thin film uniformity existing in the high-throughput thin film manufacturing in the prior art.

[0006] To achieve the above-mentioned and other related objectives, the present invention provides a multi-channel thin film manufacturing device, comprising:

[0007] A cavity, comprising a wafer carrying cavity and a carrier gas rectifying cavity that are interconnected, wherein the vertical projection of the carrier gas rectifying cavity is located within the wafer carrying cavity;

[0008] A wafer carrying unit, located in the wafer carrying cavity, for carrying the wafer and driving the wafer to move;

[0009] A gas phase reaction unit, wherein the gas phase reaction unit is located in the carrier gas rectifying cavity and covers a local area of ​​the wafer along the vertical projection, and the gas phase reaction unit provides the wafer with an isolation gas zone, a gas retraction zone and a reaction gas zone from the outside to the inside, the distance between the reaction gas zone and the wafer carrying unit is greater than the distance between the top wall of the wafer carrying cavity and the wafer carrying unit, the distances between the isolation gas zone and the gas retraction zone and the wafer carrying unit do not exceed the distance between the top wall of the wafer carrying cavity and the wafer carrying unit, and the isolation gas zone and the reaction gas zone are balanced by the gas retraction zone to provide a stable gas phase reaction source to the wafer.

[0010] Optionally, the distances between the isolation gas zone and the gas withdrawal zone and the wafer carrying unit are all equal to the distance between the top wall of the wafer carrying cavity and the wafer carrying unit.

[0011] Optionally, the distances between the isolation gas zone and the gas withdrawal zone and the wafer carrying unit are all smaller than the distance between the top wall of the wafer carrying cavity and the wafer carrying unit.

[0012] Optionally, the distances between the isolation gas zone and the gas withdrawal zone and the wafer carrying unit are the same or are stepped.

[0013] Optionally, the wafer carrying unit drives the wafer to move in one or a combination of translation, rotation and lifting.

[0014] Optionally, a measurement module is further provided in the wafer carrying cavity for detecting and characterizing the thin film manufactured on the surface of the wafer.

[0015] Optionally, N>1 of the carrier gas rectifying cavities are included, and N is an integer.

[0016] Optionally, the cavity has a convex shape, or a mouth shape, and the wafer carrying cavity and the carrier gas rectifying cavity are divided by an internal isolation wall.

[0017] Optionally, the multi-channel thin film manufacturing equipment includes a multi-channel thin film etching equipment or a multi-channel thin film deposition equipment.

[0018] The present invention also provides a method for manufacturing a multi-channel film, comprising the following steps:

[0019] 1) Providing a multi-channel thin film manufacturing device as described in any of the above solutions;

[0020] 2) using the gas phase reaction unit to provide a stable gas phase reaction source to the wafer to form a thin film on a region of the wafer;

[0021] 3) using the wafer carrying unit to drive the wafer to move so as to form a thin film on another area of ​​the wafer;

[0022] 4) Repeat step 3) at least once to form thin films on multiple different areas of the wafer.

[0023] As described above, the multi-channel thin film manufacturing equipment and thin film manufacturing method of the present invention are provided with a wafer carrying cavity and a carrier gas rectifying cavity, so that the wafer carrying cavity and the carrier gas rectifying cavity are interconnected, and the vertical projection of the carrier gas rectifying cavity is located in the wafer carrying cavity, and a gas phase reaction unit that can achieve balance is provided in the carrier gas rectifying cavity. The gas phase reaction unit provides an isolation gas zone, a gas withdrawal zone and a reaction gas zone to the wafer from the outside to the inside, and the distance between the reaction gas zone and the wafer carrying unit is greater than the distance between the top wall of the wafer carrying cavity and the wafer carrying unit, so that a stable gas phase reaction source can be provided to the corresponding local wafer to achieve good isolation of the local area of ​​the wafer from the outside during the gas phase reaction, thereby reducing the difficulty of process control and improving the uniformity of thin film preparation. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 Shown is a structural schematic diagram of a multi-channel thin film manufacturing device provided in an embodiment of the present invention.

[0025] Figure 2 Display as Figure 1 Schematic diagram of the top view of the multi-channel thin film manufacturing equipment provided in.

[0026] Figure 3 Shown is a schematic structural diagram of another multi-channel thin film manufacturing device provided in an embodiment of the present invention.

[0027] Figure 4 Shown is a process flow chart for manufacturing a multi-channel film in an embodiment of the present invention.

[0028] Description of Reference Numerals

[0029] 100 cavity

[0030] 101 Wafer Carrying Cavity

[0031] 102 carrier gas rectifier cavity

[0032] 200 wafer loading unit

[0033] 300 wafers

[0034] 400 Gas Phase Reaction Unit

[0035] 401 Isolation Gas Area

[0036] 402 Gas Recirculation Area

[0037] 403 Reaction Gas Zone

[0038] 500 cavity wall

[0039] 600 measurement modules DETAILED DESCRIPTION

[0040] The following describes the embodiments of the present invention through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different viewpoints and applications without departing from the spirit of the present invention.

[0041] The structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification so as to facilitate understanding and reading by those familiar with this technology. They are not used to limit the conditions for implementation of the present invention and therefore have no substantial technical significance. Any modification of the structure, change in the proportion relationship, or adjustment of the size should still fall within the scope of the technical content disclosed by the present invention without affecting the efficacy and purpose of the present invention. At the same time, the terms such as "upper", "lower", "left", "right", "middle" and "one" quoted in this specification are only for the convenience of description and are not used to limit the scope of implementation of the present invention. Changes or adjustments in their relative relationships should also be regarded as the scope of implementation of the present invention without substantially changing the technical content.

[0042] like Figure 1 and Figure 2, this embodiment provides a multi-channel thin film manufacturing equipment, the multi-channel thin film manufacturing equipment includes a chamber 100, a wafer carrying unit 200 and a gas phase reaction unit 400, wherein the chamber 100 includes a wafer carrying chamber 101 and a carrier gas rectifying chamber 102 that are interconnected, and the carrier gas rectifying chamber 102 is located in the wafer carrying chamber 101 along the vertical projection; the wafer carrying unit 200 is located in the wafer carrying chamber 101, for carrying the wafer 300 and driving the wafer to operate; the gas phase reaction unit 400 is located in the carrier gas rectifying chamber 102 and covers a local area of ​​the wafer 300 along the vertical projection, and the gas phase reaction unit 400 provides the wafer 300 with an isolation gas zone 401, a gas withdrawal zone 402 and a reaction gas zone 403 from the outside to the inside, The distance H1 between the reaction gas zone 403 and the wafer carrying unit 200 is greater than the distance H between the top wall of the wafer carrying cavity 101 and the wafer carrying unit 200, that is, H1>H, the distance H3 between the isolation gas zone 401 and the wafer carrying unit 200 does not exceed the distance H between the top wall of the wafer carrying cavity 101 and the wafer carrying unit 200, that is, H≥H3, and the distance H2 between the gas withdrawal zone 402 and the wafer carrying unit 200 does not exceed the distance H between the top wall of the wafer carrying cavity 101 and the wafer carrying unit 200, that is, H≥H2, and the isolation gas zone 401 and the reaction gas zone 403 are balanced through the gas withdrawal zone 402 to provide a stable gas phase reaction source to the wafer 300.

[0043] In this embodiment, in order to provide a stable gas phase reaction source to the wafer 300 , the chamber 100 is divided into two interconnected chambers, namely the wafer carrying chamber 101 and the carrier gas rectifying chamber 102 .

[0044] In which, the gas phase reaction unit 400 is located in the carrier gas rectifying chamber 102 and covers a local area of ​​the wafer 300 along the vertical projection, providing the wafer 300 with an active area including the isolation gas zone 401, the gas withdrawal zone 402 and the reaction gas zone 403 from the outside to the inside, and making the distance between the reaction gas zone 403 in the carrier gas rectifying chamber 102 and the wafer carrying unit 200 H1, the distance between the gas withdrawal zone 402 and the wafer carrying unit 200 H2, the distance between the isolation gas zone 401 and the wafer carrying unit 200 H3, the distance between the top wall of the wafer carrying chamber 101 and the wafer carrying unit 200 is H, and H1>H, H>H3 and H>H2.

[0045] In this embodiment, when the reaction gas is introduced through the reaction gas zone 403 and the isolation gas is introduced through the isolation gas zone 401, and the gas is pumped back through the gas withdrawal zone 402, since H1>H, H>H3 and H>H2, the airflow disturbance outside the action range of the gas phase reaction unit 400 in the cavity 100 is difficult to affect the gas phase reaction process. The isolation gas zone 401 and the reaction gas zone 403 can achieve balance through the gas withdrawal zone 402, and the controllability is relatively high, so it is easy for the gas phase reaction unit 400 to provide a stable gas phase reaction source to the wafer 300.

[0046] As required, the size and shape of each region in the isolation gas region 401, the gas withdrawal region 402 and the reaction gas region 403 can be adjusted as required. In this embodiment, Figure 2 , each area forms a concentric ring shape, but is not limited to this. If necessary, each area can also be square, elliptical, etc.

[0047] As an example, the distances between the isolation gas zone 401 and the gas withdrawal zone 402 and the wafer carrying unit 200 may be equal to the distance between the top wall of the wafer carrying chamber 101 and the wafer carrying unit 200 .

[0048] As an example, the distances between the isolation gas zone 401 and the gas retraction zone 402 and the wafer carrying unit 200 may be smaller than the distance between the top wall of the wafer carrying cavity 101 and the wafer carrying unit 200. Furthermore, the distances between the isolation gas zone 401 and the gas retraction zone 402 and the wafer carrying unit 200 may be the same or stepped.

[0049] In this embodiment, Figure 1 , the distance H3 between the isolation gas zone 401 and the wafer carrying unit 200 and the distance H2 between the gas withdrawal zone 402 and the wafer carrying unit 200 are both smaller than the distance H between the top wall of the wafer carrying chamber 101 and the wafer carrying unit 200, that is, H2<H, H3<H, and H2=H3, but it is not limited to this. In another embodiment, as needed, H2=H3=H, or one of H2 and H3 can be equal to H and the other can be smaller than H, so that H2 and H3 are distributed in a stepped manner, such as Figure 3 , no excessive restrictions are made here.

[0050] In this embodiment, Figure 1The shape of the cavity 100 is "convex", that is, the cavity 100 is formed into a "convex" shape by the cavity wall 500, but it is not limited to this. According to needs, in another embodiment, the shape of the cavity 100 can also be "mouth" shaped, and a partition wall can be set inside the cavity 100 to divide the wafer carrying cavity 101 and the carrier gas rectifying cavity 102. The external shape of the multi-channel thin film manufacturing equipment can be set as needed, and no excessive restrictions are made here.

[0051] As an example, the wafer carrying unit 200 may drive the wafer 300 to move in a manner that includes one or a combination of translation, rotation, and lifting.

[0052] like Figure 2 In this embodiment, the projection center of the gas phase reaction unit 400 on the wafer 300 in the vertical direction coincides with the center of the wafer 300, and the uniformity of the thin film formation can be further improved by rotating the wafer supporting unit 200. However, this is not limited to this. In another embodiment, the projection center of the gas phase reaction unit 400 on the wafer 300 in the vertical direction may not coincide with the center of the wafer 300, that is, there is an eccentric distance, so that the desired local thin film can be formed in different areas of the wafer 300 by translating and / or rotating the wafer supporting unit 200, and the distance between the wafer 300 and the wafer supporting chamber 101 and the carrier gas rectifying chamber 102 can be changed by lifting and lowering the wafer supporting unit 200 to meet the process requirements. It should be noted that when there is an eccentric distance, in addition to forming local thin films in different areas of the wafer 300 by moving the wafer carrying unit 200, the wafer carrying unit 200 can also be rotated around the center of the local area during the process of forming a thin film in a single local area to improve the uniformity of the thin film.

[0053] Furthermore, the wafer carrier unit 200 may have a heating function to achieve controlled heating of the wafer 300. The specific structure and type of the wafer carrier unit 200 are not limited herein. For example, the wafer carrier unit 200 may be provided with a localized heating element to achieve localized heating of the wafer 300 to meet the needs of the process. Of course, as needed, the wafer carrier unit 200 may also be provided with an integral heating element to achieve heating treatment of the entire wafer 300. This is not limited herein.

[0054] Furthermore, a measurement module 600 may be provided within the wafer holding chamber 101 for detecting and characterizing the thin film formed on the surface of the wafer 300. For example, the measurement module 600 may include measurement components for detecting and characterizing the elemental composition, film thickness, and microstructure of the thin film formed on the surface of the wafer 300. The specific type of the measurement module 600 is not limited herein.

[0055] As an example, the same multi-channel thin film manufacturing equipment can be configured to include N carrier gas rectifying chambers 102, such as N can be an integer such as 1, 2, 3, etc. When N is greater than 1, thin film preparation can be performed on different areas of the same wafer 300 at the same time, and due to the stability of the carrier gas rectifying chamber 102, the areas where the carrier gas rectifying chambers 102 act do not interfere with each other during the gas phase reaction, so as to achieve efficient preparation of high-quality thin films on the wafer 300. The value of N can be set as needed, and no excessive restrictions are imposed here.

[0056] As an example, the multi-channel thin film manufacturing equipment may include a multi-channel thin film etching equipment or a multi-channel thin film deposition equipment.

[0057] Specifically, the multi-channel thin film manufacturing equipment can be ALD equipment, ALE equipment, CVD equipment, Etch equipment, etc., without excessive limitation here. Among them, etching equipment includes ICP, CCP, IBE, RIE, etc.

[0058] like Figure 1 The diagram shows a multi-channel thin film ICP etching device, wherein the etching gas is introduced into the carrier gas rectifying chamber 102 through the reaction gas zone 403, and plasma is generated through the radio frequency coupling coil. Under the action of the electrode bias voltage below the wafer 300, the plasma bombards the surface of a local area of ​​the wafer 300 located in the carrier gas rectifying chamber 102 to form etching, and the protective gas forms a continuous and dense protective gas curtain through the isolation gas zone 401. The etching products, excess free radicals, etc. are discharged through the gas retraction zone 402, so that a good balance state can be achieved in the carrier gas rectifying chamber 102, avoiding the influence of external airflow on the carrier gas rectifying chamber 102, and realizing uniform preparation of the thin film, such as uniform film thickness, uniform film morphology, and uniform film distribution.

[0059] like Figure 4 This embodiment also provides a method for manufacturing a multi-channel film, comprising the following steps:

[0060] S1: providing the above-mentioned multi-channel thin film manufacturing equipment;

[0061] S2: using the gas phase reaction unit 400 to provide a stable gas phase reaction source to the wafer 300 to form a thin film on a region of the wafer 300;

[0062] S3: Using the wafer carrying unit 200 to drive the wafer 300 to move, so as to form a thin film on another area of ​​the wafer 300;

[0063] S4: Repeat step S3 at least once to form thin films on a plurality of different regions of the wafer 300 .

[0064] The specific structure of the multi-channel thin film manufacturing equipment will not be described in detail here, and reference may be made to the above introduction to the multi-channel thin film manufacturing equipment.

[0065] To sum up, the multi-channel thin film manufacturing equipment and thin film manufacturing method of the present invention are provided with a wafer carrying cavity and a carrier gas rectifying cavity, so that the wafer carrying cavity and the carrier gas rectifying cavity are interconnected, and the vertical projection of the carrier gas rectifying cavity is located in the wafer carrying cavity, and a gas phase reaction unit that can achieve balance is provided in the carrier gas rectifying cavity. The gas phase reaction unit provides an isolation gas zone, a gas withdrawal zone and a reaction gas zone to the wafer from the outside to the inside, and the distance between the reaction gas zone and the wafer carrying unit is greater than the distance between the top wall of the wafer carrying cavity and the wafer carrying unit, so that a stable gas phase reaction source can be provided to the corresponding local wafer to achieve good isolation of the local area of ​​the wafer from the outside during the gas phase reaction, thereby reducing the difficulty of process control and improving the uniformity of thin film preparation.

[0066] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. A multi-channel thin film manufacturing device, characterized in that: include: A cavity, comprising a wafer carrying cavity and a carrier gas rectifying cavity that are interconnected, wherein the vertical projection of the carrier gas rectifying cavity is located within the wafer carrying cavity; A wafer carrying unit, located in the wafer carrying cavity, for carrying the wafer and driving the wafer to move; A gas phase reaction unit, wherein the gas phase reaction unit is located in the carrier gas rectifying cavity and covers a local area of ​​the wafer along the vertical projection, and the gas phase reaction unit provides the wafer with an isolation gas zone, a gas retraction zone and a reaction gas zone from the outside to the inside, the distance between the reaction gas zone and the wafer carrying unit is greater than the distance between the top wall of the wafer carrying cavity and the wafer carrying unit, the distances between the isolation gas zone and the gas retraction zone and the wafer carrying unit do not exceed the distance between the top wall of the wafer carrying cavity and the wafer carrying unit, and the isolation gas zone and the reaction gas zone are balanced by the gas retraction zone to provide a stable gas phase reaction source to the wafer.

2. The multi-channel thin film manufacturing equipment according to claim 1, characterized in that: The distances between the isolation gas zone and the gas withdrawal zone and the wafer carrying unit are all equal to the distance between the top wall of the wafer carrying cavity and the wafer carrying unit.

3. The multi-channel thin film manufacturing equipment according to claim 1, characterized in that: The distances between the isolation gas zone and the gas withdrawal zone and the wafer carrying unit are all smaller than the distance between the top wall of the wafer carrying cavity and the wafer carrying unit.

4. The multi-channel thin film manufacturing equipment according to claim 3, characterized in that: The distances between the isolation gas zone, the gas withdrawal zone and the wafer carrying unit are the same or in a stepped shape.

5. The multi-channel thin film manufacturing equipment according to claim 1, characterized in that: The wafer carrying unit drives the wafer to move in one of the following ways: translation, rotation, and lifting, or a combination thereof.

6. The multi-channel thin film manufacturing equipment according to claim 1, characterized in that: A measurement module is also provided in the wafer carrying cavity for detecting and characterizing the thin film manufactured on the surface of the wafer.

7. The multi-channel thin film manufacturing equipment according to claim 1, characterized in that: It includes N>1 carrier gas rectifying cavities, and N is an integer.

8. The multi-channel thin film manufacturing equipment according to claim 1, characterized in that: The shape of the cavity is a "convex" shape, or the shape of the cavity is a "mouth" shape, and the wafer carrying cavity and the carrier gas rectifying cavity are divided by an internal isolation wall.

9. The multi-channel thin film manufacturing equipment according to claim 1, characterized in that: The multi-channel thin film manufacturing equipment includes a multi-channel thin film etching equipment or a multi-channel thin film deposition equipment.

10. A method for manufacturing a multi-channel film, characterized in that: The following steps are involved: 1) Providing a multi-channel thin film manufacturing device according to any one of claims 1 to 9; 2) using the gas phase reaction unit to provide a stable gas phase reaction source to the wafer to form a thin film on a region of the wafer; 3) using the wafer carrying unit to drive the wafer to move so as to form a thin film on another area of ​​the wafer; 4) Repeat step 3) at least once to form thin films on multiple different areas of the wafer.

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