Thin film manufacturing apparatus and manufacturing method thereof

Abstract

According to the thin film manufacturing equipment and the manufacturing method thereof, the wafer bearing cavity and the multiple carrier gas rectifying cavities are arranged, the wafer bearing cavity is connected with the carrier gas rectifying cavities, the vertical projections of the carrier gas rectifying cavities are located in the wafer bearing cavity, and the gas phase reaction units capable of achieving balance are arranged in the carrier gas rectifying cavities. The gas-phase reaction unit provides an isolation gas area, a gas pumping-back area and a reaction gas area from outside to inside for the wafer, and the distance between the reaction gas area and the wafer bearing unit is greater than the distance between the top wall of the wafer bearing cavity and the wafer bearing unit, so that a stable gas-phase reaction source can be provided for the corresponding wafer; therefore, the wafers are well isolated from the outside in the gas-phase reaction process, the process control difficulty can be reduced, the uniformity of the prepared thin film is improved, and the process procedures of the wafers do not interfere with each other.

Description

Technical Field

[0001] The invention belongs to the technical field of thin film manufacturing and relates to a thin film manufacturing device and a manufacturing method thereof. Background Art

[0002] In thin film manufacturing technology, traditional thin film manufacturing equipment uses only one set of process conditions during a single process cycle, which requires significant time and cost for the preparation and testing of multi-component materials. This necessitates the use of high-throughput thin film manufacturing equipment, which can produce a large number of elemental combinations in a short period of time, enabling more efficient and comprehensive research on multi-component materials.

[0003] However, during the gas-phase reaction process, existing high-throughput thin-film manufacturing equipment cannot effectively isolate the local area of ​​the wafer from the outside world, making it difficult to provide an independent and stable local manufacturing environment. This results in the low uniformity of the prepared high-throughput thin films, such as film composition uniformity, film thickness uniformity, film morphology uniformity, etc., which will have a huge adverse impact on the research and application of thin films.

[0004] Therefore, there is an urgent need to develop new thin film manufacturing equipment and manufacturing methods. Summary of the Invention

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a thin film manufacturing device and a manufacturing method thereof, which are used to solve the problems of thin film uniformity and process interference in multi-wafer processes in thin film manufacturing in the prior art.

[0006] To achieve the above-mentioned and other related purposes, the present invention provides a thin film manufacturing device, comprising:

[0007] A cavity, comprising a wafer carrying cavity and M carrier gas rectifying cavities that are interconnected, and a vertical projection of each carrier gas rectifying cavity is located within the wafer carrying cavity;

[0008] A wafer carrying unit, located in the wafer carrying cavity, for carrying the wafer and driving the wafer to move;

[0009] A gas phase reaction unit, wherein the gas phase reaction unit is located in the carrier gas rectifying chamber and corresponds to the carrier gas rectifying chamber one by one and completely covers the corresponding wafer along the vertical projection, each gas phase reaction unit provides the corresponding wafer from the outside to the inside with an isolation gas zone, a gas retraction zone and a reaction gas zone, the distance between the reaction gas zone and the wafer carrying unit is greater than the distance between the top wall of the wafer carrying chamber and the wafer carrying unit, the distances between the isolation gas zone and the gas retraction zone and the wafer carrying unit do not exceed the distance between the top wall of the wafer carrying chamber and the wafer carrying unit, the isolation gas zone and the reaction gas zone are balanced by the gas retraction zone to provide a stable gas phase reaction source to the corresponding wafer.

[0010] Optionally, in the same gas-phase reaction unit, the distances between the corresponding isolation gas zone and the gas withdrawal zone and the wafer carrying unit are equal to the distance between the top wall of the wafer carrying cavity and the wafer carrying unit.

[0011] Optionally, in the same gas-phase reaction unit, the distances between the corresponding isolation gas zone and the gas withdrawal zone and the wafer carrying unit are smaller than the distance between the top wall of the wafer carrying cavity and the wafer carrying unit.

[0012] Optionally, the distances between the isolation gas zone and the gas withdrawal zone and the wafer carrying unit are the same or are stepped.

[0013] Optionally, the wafer carrying unit drives the wafer to move in one or a combination of translation, rotation and lifting.

[0014] Optionally, the wafer carrying unit further includes a wafer carrier corresponding to each wafer, and each wafer carrier drives the corresponding wafer to move, and the operation mode includes one or a combination of translation, rotation and lifting.

[0015] Optionally, a measurement module is further provided in the wafer carrying cavity for detecting and characterizing the thin film manufactured on the surface of the wafer.

[0016] Optionally, the cavity has a convex shape, or a mouth shape, and the wafer carrying cavity and the carrier gas rectifying cavity are divided by an internal isolation wall.

[0017] Optionally, the thin film manufacturing equipment includes a thin film etching equipment or a thin film deposition equipment.

[0018] The present invention also provides a method for manufacturing a thin film, comprising the following steps:

[0019] 1) Providing the thin film manufacturing equipment described in any of the above solutions;

[0020] 2) Using the gas phase reaction unit to provide a stable gas phase reaction source to the wafers, forming a thin film on the surface of each corresponding wafer.

[0021] As described above, the thin film manufacturing equipment and the manufacturing method thereof of the present invention are provided with a wafer carrying cavity and a plurality of carrier gas rectifying cavities, so that the wafer carrying cavity and each carrier gas rectifying cavity are interconnected, and each carrier gas rectifying cavity is located in the wafer carrying cavity along the vertical projection, and a gas phase reaction unit that can achieve balance is provided in the carrier gas rectifying cavity. The gas phase reaction unit provides an isolation gas zone, a gas withdrawal zone and a reaction gas zone to the wafer from the outside to the inside, and the distance between the reaction gas zone and the wafer carrying unit is greater than the distance between the top wall of the wafer carrying cavity and the wafer carrying unit, thereby providing a stable gas phase reaction source to the corresponding wafer to achieve good isolation of the wafer from the outside during the gas phase reaction, thereby reducing the difficulty of process control, improving the uniformity of thin film preparation, and ensuring that the process steps between wafers do not interfere with each other. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 Shown is a structural schematic diagram of a thin film manufacturing device provided in an embodiment of the present invention.

[0023] Figure 2 Display as Figure 1 Schematic diagram of the top view of the thin film manufacturing equipment provided in.

[0024] Figure 3 Shown is a schematic structural diagram of another thin film manufacturing device provided in Example 1 of the present invention.

[0025] Figure 4 Shown is a process flow chart for manufacturing a thin film in Example 1 of the present invention.

[0026] Figure 5 Shown is a schematic structural diagram of a thin film manufacturing device provided in the second embodiment of the present invention.

[0027] Figure 6 Display as Figure 5 Schematic diagram of the distribution of wafers in the thin film manufacturing equipment provided.

[0028] Figure 7 Display as Figure 5 Schematic diagram of the distribution of various gas phase reaction units in the thin film manufacturing equipment provided in.

[0029] Description of Reference Numerals

[0030] 100 cavity

[0031] 101 Wafer Carrying Cavity

[0032] 102 carrier gas rectifier cavity

[0033] 200 wafer loading unit

[0034] 300 wafers

[0035] 400 Gas Phase Reaction Unit

[0036] 401 Isolation Gas Area

[0037] 402 Gas Recirculation Area

[0038] 403 Reaction Gas Zone

[0039] 500 cavity wall

[0040] 600 measurement modules DETAILED DESCRIPTION

[0041] The following describes the embodiments of the present invention through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different viewpoints and applications without departing from the spirit of the present invention.

[0042] The structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification so as to facilitate understanding and reading by those familiar with this technology. They are not used to limit the conditions for implementation of the present invention and therefore have no substantial technical significance. Any modification of the structure, change in the proportion relationship, or adjustment of the size should still fall within the scope of the technical content disclosed by the present invention without affecting the efficacy and purpose of the present invention. At the same time, the terms such as "upper", "lower", "left", "right", "middle" and "one" quoted in this specification are only for the convenience of description and are not used to limit the scope of implementation of the present invention. Changes or adjustments in their relative relationships should also be regarded as the scope of implementation of the present invention without substantially changing the technical content.

[0043] Example 1

[0044] like Figure 1 and Figure 2, this embodiment provides a thin film manufacturing device, the thin film manufacturing device includes a chamber 100, a wafer carrying unit 200 and a gas phase reaction unit 400, wherein the chamber 100 includes a wafer carrying chamber 101 and a carrier gas rectifying chamber 102 that are interconnected, and the carrier gas rectifying chamber 102 is located in the wafer carrying chamber 101 along the vertical projection; the wafer carrying unit 200 is located in the wafer carrying chamber 101, for carrying the wafer 300 and driving the wafer to operate; the gas phase reaction unit 400 is located in the carrier gas rectifying chamber 102 and covers a local area of ​​the wafer 300 along the vertical projection, the gas phase reaction unit 400 provides the wafer 300 with an isolation gas zone 401, a gas withdrawal zone 402 and a reaction gas zone 403 from the outside to the inside, the reaction The distance H1 between the gas zone 403 and the wafer carrying unit 200 is greater than the distance H between the top wall of the wafer carrying cavity 101 and the wafer carrying unit 200, that is, H1>H, the distance H3 between the isolation gas zone 401 and the wafer carrying unit 200 does not exceed the distance H between the top wall of the wafer carrying cavity 101 and the wafer carrying unit 200, that is, H≥H3, and the distance H2 between the gas backflow zone 402 and the wafer carrying unit 200 does not exceed the distance H between the top wall of the wafer carrying cavity 101 and the wafer carrying unit 200, that is, H≥H2, and the isolation gas zone 401 and the reaction gas zone 403 are balanced through the gas backflow zone 402 to provide a stable gas phase reaction source to the wafer 300.

[0045] In this embodiment, in order to provide a stable gas phase reaction source to the wafer 300 , the chamber 100 is divided into two interconnected chambers, namely the wafer carrying chamber 101 and the carrier gas rectifying chamber 102 .

[0046] In which, the gas phase reaction unit 400 is located in the carrier gas rectifying chamber 102 and covers a local area of ​​the wafer 300 along the vertical projection, providing the wafer 300 with an active area including the isolation gas zone 401, the gas withdrawal zone 402 and the reaction gas zone 403 from the outside to the inside, and making the distance between the reaction gas zone 403 in the carrier gas rectifying chamber 102 and the wafer carrying unit 200 H1, the distance between the gas withdrawal zone 402 and the wafer carrying unit 200 H2, the distance between the isolation gas zone 401 and the wafer carrying unit 200 H3, the distance between the top wall of the wafer carrying chamber 101 and the wafer carrying unit 200 is H, and H1>H, H>H3 and H>H2.

[0047] In this embodiment, when the reaction gas is introduced through the reaction gas zone 403 and the isolation gas is introduced through the isolation gas zone 401, and the gas is pumped back through the gas withdrawal zone 402, since H1>H, H>H3 and H>H2, the airflow disturbance outside the action range of the gas phase reaction unit 400 in the cavity 100 is difficult to affect the gas phase reaction process. The isolation gas zone 401 and the reaction gas zone 403 can achieve balance through the gas withdrawal zone 402, and the controllability is relatively high, so it is easy for the gas phase reaction unit 400 to provide a stable gas phase reaction source to the wafer 300.

[0048] As required, the size and shape of each region in the isolation gas region 401, the gas withdrawal region 402 and the reaction gas region 403 can be adjusted as required. In this embodiment, Figure 2 , each area forms a concentric ring shape, but is not limited to this. If necessary, each area can also be square, elliptical, etc.

[0049] As an example, the distances between the isolation gas zone 401 and the gas withdrawal zone 402 and the wafer carrying unit 200 may be equal to the distance between the top wall of the wafer carrying chamber 101 and the wafer carrying unit 200 .

[0050] As an example, the distances between the isolation gas zone 401 and the gas retraction zone 402 and the wafer carrying unit 200 may be smaller than the distance between the top wall of the wafer carrying cavity 101 and the wafer carrying unit 200. Furthermore, the distances between the isolation gas zone 401 and the gas retraction zone 402 and the wafer carrying unit 200 may be the same or stepped.

[0051] In this embodiment, Figure 1 , the distance H3 between the isolation gas zone 401 and the wafer carrying unit 200 and the distance H2 between the gas withdrawal zone 402 and the wafer carrying unit 200 are both smaller than the distance H between the top wall of the wafer carrying chamber 101 and the wafer carrying unit 200, that is, H2<H, H3<H, and H2=H3, but it is not limited to this. In another embodiment, as needed, H2=H3=H, or one of H2 and H3 can be equal to H and the other can be smaller than H, so that H2 and H3 are distributed in a stepped manner, such as Figure 3 , no excessive restrictions are made here.

[0052] In this embodiment, Figure 1The shape of the cavity 100 is "convex", that is, the cavity 100 is formed into a "convex" shape by the cavity wall 500, but it is not limited to this. According to needs, in another embodiment, the shape of the cavity 100 can also be "mouth" shaped, and a partition wall can be set inside the cavity 100 to divide the wafer carrying cavity 101 and the carrier gas rectifying cavity 102. The external shape of the thin film manufacturing equipment can be set as needed, and no excessive restrictions are made here.

[0053] As an example, the wafer carrying unit 200 may drive the wafer 300 to move in a manner that includes one or a combination of translation, rotation, and lifting.

[0054] like Figure 2 In this embodiment, the projection center of the gas phase reaction unit 400 on the wafer 300 in the vertical direction coincides with the center of the wafer 300, and the uniformity of the thin film formation can be further improved by rotating the wafer supporting unit 200. However, this is not limited to this. In another embodiment, the projection center of the gas phase reaction unit 400 on the wafer 300 in the vertical direction may not coincide with the center of the wafer 300, that is, there is an eccentric distance, so that the desired local thin film can be formed in different areas of the wafer 300 by translating and / or rotating the wafer supporting unit 200, and the distance between the wafer 300 and the wafer supporting chamber 101 and the carrier gas rectifying chamber 102 can be changed by lifting and lowering the wafer supporting unit 200 to meet the process requirements. It should be noted that when there is an eccentric distance, in addition to forming local thin films in different areas of the wafer 300 by moving the wafer carrying unit 200, the wafer carrying unit 200 can also be rotated around the center of the local area during the process of forming a thin film in a single local area to improve the uniformity of the thin film.

[0055] Furthermore, the wafer carrier unit 200 may have a heating function to achieve controlled heating of the wafer 300. The specific structure and type of the wafer carrier unit 200 are not limited herein. For example, the wafer carrier unit 200 may be provided with a localized heating element to achieve localized heating of the wafer 300 to meet the needs of the process. Of course, as needed, the wafer carrier unit 200 may also be provided with an integral heating element to achieve heating treatment of the entire wafer 300. This is not limited herein.

[0056] Furthermore, a measurement module 600 may be provided within the wafer holding chamber 101 for detecting and characterizing the thin film formed on the surface of the wafer 300. For example, the measurement module 600 may include measurement components for detecting and characterizing the elemental composition, film thickness, and microstructure of the thin film formed on the surface of the wafer 300. The specific type of the measurement module 600 is not limited herein.

[0057] As an example, the same thin film manufacturing equipment can be provided with N carrier gas rectifying chambers 102, such as N can be an integer such as 1, 2, 3, etc. When N is greater than 1, it is possible to simultaneously prepare thin films on different areas of the same wafer 300, and due to the stability of the carrier gas rectifying chamber 102, it is possible to achieve non-interference between the areas where the carrier gas rectifying chambers 102 act during the gas phase reaction, so as to achieve efficient preparation of high-quality thin films on the wafer 300. The value of N can be set as needed, and no excessive restrictions are imposed here.

[0058] As an example, the thin film manufacturing equipment may include a thin film etching equipment or a thin film deposition equipment.

[0059] Specifically, the thin film manufacturing equipment may be ALD equipment, ALE equipment, CVD equipment, Etch equipment, etc., without excessive limitation here. Among them, etching equipment may include ICP, CCP, IBE, RIE, etc.

[0060] like Figure 1 The diagram shows a thin film ICP etching device, wherein the etching gas is introduced into the carrier gas rectifying chamber 102 through the reaction gas zone 403, and plasma is generated through the radio frequency coupling coil. Under the action of the electrode bias voltage below the wafer 300, the plasma bombards the surface of a local area of ​​the wafer 300 located in the carrier gas rectifying chamber 102 to form etching, and the protective gas forms a continuous and dense protective gas curtain through the isolation gas zone 401. The etching products, excess free radicals, etc. are discharged through the gas retraction zone 402, so that a good balance state can be achieved in the carrier gas rectifying chamber 102, avoiding the influence of external airflow on the carrier gas rectifying chamber 102, and realizing uniform preparation of the thin film, such as uniform film thickness, uniform film morphology, and uniform film distribution.

[0061] like Figure 4 This embodiment also provides a method for manufacturing a thin film, comprising the following steps:

[0062] S1: providing the above-mentioned thin film manufacturing equipment;

[0063] S2: using the gas phase reaction unit 400 to provide a stable gas phase reaction source to the wafer 300 to form a thin film on a region of the wafer 300;

[0064] S3: Using the wafer carrying unit 200 to drive the wafer 300 to move, so as to form a thin film on another area of ​​the wafer 300;

[0065] S4: Repeat step S3 at least once to form thin films on a plurality of different regions of the wafer 300 .

[0066] The specific structure of the thin film manufacturing equipment will not be described in detail here, and reference may be made to the above introduction to the thin film manufacturing equipment.

[0067] Example 2

[0068] like Figures 5 to 7 , this embodiment provides a thin film manufacturing device, the thin film manufacturing device includes a cavity 100, a wafer carrying unit 200 and a gas phase reaction unit 400, wherein the cavity 100 includes the wafer carrying cavity 101 and M independently arranged carrier gas rectifying cavities 102 that are interconnected, and the vertical projection of each carrier gas rectifying cavity 102 is located in the wafer carrying cavity 101; the wafer carrying unit 200 is located in the wafer carrying cavity 101, for carrying the wafer 300 and driving the wafer 300 to operate; the gas phase reaction unit 400 is located in the carrier gas rectifying cavity 102 and corresponds to the carrier gas rectifying cavity 102 one by one and completely covers the corresponding wafer 300 along the vertical projection, and each gas phase reaction unit 400 provides the corresponding wafer 300 from the outside to the inside with a gas barrier. From the gas zone 401, the gas retraction zone 402 and the reaction gas zone 403, the distance between the reaction gas zone 403 and the wafer carrying unit 200 is greater than the distance between the top wall of the wafer carrying cavity 101 and the wafer carrying unit 200, the distance between the isolation gas zone 401 and the wafer carrying unit 200 does not exceed the distance between the top wall of the wafer carrying cavity 101 and the wafer carrying unit 200, and the distance between the gas retraction zone 402 and the wafer carrying unit 200 does not exceed the distance between the top wall of the wafer carrying cavity 101 and the wafer carrying unit 200, the isolation gas zone 401 and the reaction gas zone 403 are balanced by the gas retraction zone 402 to provide a stable gas phase reaction source to the corresponding wafer 300.

[0069] Among them, the wafers 300 and the gas phase reaction units 400 can correspond one to one. Of course, according to needs, when the space of the gas phase reaction unit 400 is larger, the same gas phase reaction unit 400 can also correspond to multiple wafers 300 at the same time. There is no excessive restriction here.

[0070] The difference between the second embodiment and the first embodiment is that: in the present embodiment, a plurality of independently arranged carrier gas rectifying chambers 102 are provided in the chamber 100, and each of the gas phase reaction units 400 located in the carrier gas rectifying chamber 102 completely covers the corresponding wafer 300 along the vertical projection.

[0071] like Figure 6 and Figure 7 In this embodiment, the carrier gas rectifying cavity 102 includes 5, that is, M is 5, but it is not limited thereto. M can also be 2, 3, 4, 6, etc., and is not overly restricted here. Figure 5 Can be regarded as along Figure 6 and Figure 7 Cross-sectional view along line A-A'.

[0072] In this embodiment, Figure 5 Region B in Example 1 Figure 3 The thin film manufacturing equipment in can achieve the same technical effect, that is, this embodiment can realize the uniform preparation of thin films on the surfaces of the corresponding wafers 300 through the protruding gas phase reaction units 400 in each of the carrier gas rectifying chambers 102, and each of the gas phase reaction units 400 can be independently controlled and achieve balance within the active area of ​​each corresponding wafer 300, so that the active areas corresponding to each of the gas phase reaction units 400 can be non-interfering with each other, so as to realize efficient and uniform thin film preparation on multiple wafers 300 at the same time.

[0073] The structure and arrangement of the gas phase reaction unit 400 can be referred to in Example 1 and will not be described in detail here. The distribution of the gas phase reaction unit 400 can be arranged as required and will not be limited here.

[0074] In this embodiment, since the chamber 100 has multiple wafers 300 corresponding to the gas phase reaction unit 400, the wafers 300 corresponding to the same gas phase reaction unit 400 can be subjected to the same process conditions, and the wafers 300 corresponding to different gas phase reaction units 400 can be subjected to the same process conditions or different process conditions, or only part of the wafers 300 can be subjected to process operations.

[0075] The wafer carrying unit 200 for carrying the wafer 300 may drive the wafer 300 to move in a manner including translation, rotation, and lifting, or a combination thereof, as needed.

[0076] Furthermore, in order to achieve independent control of each of the wafers 300, the wafer carrying unit 200 may also include a wafer carrier (not shown) corresponding to the wafer 300, and each of the wafer carriers may drive the corresponding wafer 300 to operate independently, and the operation mode may include one or a combination of translation, rotation and lifting.

[0077] Furthermore, the wafer carrying unit 200 and / or the wafer stage may have a heating function to achieve unified and / or independent heating control of the wafer 300. The specific structure and type of the wafer carrying unit 200 and the wafer stage are not limited here.

[0078] Among them, in the same gas-phase reaction unit 400, the heights at which the corresponding isolation gas zone 401 and the gas retraction zone 402 act on the wafer 300 may be the same or stepped, and in different gas-phase reaction units 400, the heights at which the isolation gas zone 401 and the gas retraction zone 402 act on the wafer 300 may be the same or different, and no excessive restrictions are imposed here.

[0079] This embodiment also provides a method for manufacturing a thin film, comprising the following steps:

[0080] S1: providing the thin film manufacturing equipment;

[0081] S2 : using the gas phase reaction unit 400 to provide a stable gas phase reaction source to the wafers 300 , so as to form a thin film on the surface of each corresponding wafer 300 .

[0082] To sum up, the thin film manufacturing equipment and the manufacturing method thereof of the present invention are provided with a wafer carrying cavity and multiple carrier gas rectifying cavities, so that the wafer carrying cavity and each carrier gas rectifying cavity are interconnected, and each carrier gas rectifying cavity is located in the wafer carrying cavity along the vertical projection, and a gas phase reaction unit that can achieve balance is provided in each carrier gas rectifying cavity. The gas phase reaction unit provides an isolation gas zone, a gas withdrawal zone and a reaction gas zone to the wafer from the outside to the inside, and the distance between the reaction gas zone and the wafer carrying unit is greater than the distance between the top wall of the wafer carrying cavity and the wafer carrying unit, so that a stable gas phase reaction source can be provided to the corresponding wafer to achieve good isolation of the wafer from the outside during the gas phase reaction, thereby reducing the difficulty of process control, improving the uniformity of thin film preparation, and ensuring that the process steps between wafers do not interfere with each other.

[0083] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. A thin film manufacturing device, characterized in that: The thin film manufacturing equipment comprises: A cavity, comprising a wafer carrying cavity and M carrier gas rectifying cavities that are interconnected, and a vertical projection of each carrier gas rectifying cavity is located within the wafer carrying cavity; A wafer carrying unit, located in the wafer carrying cavity, for carrying the wafer and driving the wafer to move; A gas phase reaction unit, wherein the gas phase reaction unit is located in the carrier gas rectifying chamber and corresponds to the carrier gas rectifying chamber one by one and completely covers the corresponding wafer along the vertical projection, each gas phase reaction unit provides the corresponding wafer from the outside to the inside with an isolation gas zone, a gas retraction zone and a reaction gas zone, the distance between the reaction gas zone and the wafer carrying unit is greater than the distance between the top wall of the wafer carrying chamber and the wafer carrying unit, the distances between the isolation gas zone and the gas retraction zone and the wafer carrying unit do not exceed the distance between the top wall of the wafer carrying chamber and the wafer carrying unit, the isolation gas zone and the reaction gas zone are balanced by the gas retraction zone to provide a stable gas phase reaction source to the corresponding wafer.

2. The thin film manufacturing equipment according to claim 1, characterized in that: In the same gas phase reaction unit, the distances between the corresponding isolation gas zone and the gas withdrawal zone and the wafer carrying unit are all equal to the distance between the top wall of the wafer carrying cavity and the wafer carrying unit.

3. The thin film manufacturing equipment according to claim 1, characterized in that: In the same gas phase reaction unit, the distances between the corresponding isolation gas zone and the gas withdrawal zone and the wafer carrying unit are all smaller than the distance between the top wall of the wafer carrying cavity and the wafer carrying unit.

4. The thin film manufacturing equipment according to claim 3, characterized in that: The distances between the isolation gas zone, the gas withdrawal zone and the wafer carrying unit are the same or in a stepped shape.

5. The thin film manufacturing equipment according to claim 1, characterized in that: The wafer carrying unit drives the wafer to move in one of the following ways: translation, rotation, and lifting, or a combination thereof.

6. The thin film manufacturing equipment according to claim 1, characterized in that: The wafer carrying unit also includes a wafer carrier corresponding to each wafer, and each wafer carrier drives the corresponding wafer to move, and the movement mode includes one or a combination of translation, rotation and lifting.

7. The thin film manufacturing equipment according to claim 1, characterized in that: A measurement module is also provided in the wafer carrying cavity for detecting and characterizing the thin film manufactured on the surface of the wafer.

8. The thin film manufacturing equipment according to claim 1, characterized in that: The shape of the cavity is a "convex" shape, or the shape of the cavity is a "mouth" shape, and the wafer carrying cavity and the carrier gas rectifying cavity are divided by an internal isolation wall.

9. The thin film manufacturing equipment according to claim 1, characterized in that: The thin film manufacturing equipment includes a thin film etching equipment or a thin film deposition equipment.

10. A method for manufacturing a thin film, characterized in that: The following steps are involved: 1) Providing a thin film manufacturing apparatus according to any one of claims 1 to 9; 2) Using the gas phase reaction unit to provide a stable gas phase reaction source to the wafers, forming a thin film on the surface of each corresponding wafer.

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