High-power-density intelligent power module, semiconductor and packaging method

Abstract

The invention belongs to the technical field of semiconductor devices, and particularly relates to a high-power-density intelligent power module, a semiconductor and a packaging method, and the module comprises a copper-embedded substrate which is provided with a control circuit region and a copper-embedded bearing region, and the copper-embedded bearing region half surrounds the control circuit region; the embedded copper bearing area comprises a plurality of embedded copper arranged on the embedded copper substrate, the top surface of the embedded copper is provided with at least one power chip, the embedded copper is electrically connected with the corresponding power chip, and the bottom surface of the embedded copper forms a power pin electrode on the bottom surface of the embedded copper substrate; a chip peripheral circuit and at least one control chip are arranged in the control circuit area, the control chip is electrically connected with the chip peripheral circuit, and the control chip is arranged on the top surface of the copper-embedded substrate; the chip peripheral circuit forms a control pin electrode on the bottom surface of the copper-embedded substrate; the power chip is electrically connected with the chip peripheral circuit, so that the area of the control circuit region is reduced, a larger mounting region is provided for the power chip, and the power density is improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor devices, and in particular relates to a high-power density intelligent power module, a semiconductor, and a packaging method. Background Art

[0002] Intelligent power modules (IPMs) are widely used in applications such as BLDC / PMSM motor drives and inverter power supplies. Existing IPM products are constrained by their structural framework, making multi-chip wiring difficult and hindering performance optimization. Surface-mount IPMs, in particular, struggle to fully leverage their high power density.

[0003] Therefore, due to the technical problem of low power density caused by the difficulty of multi-chip wiring in the intelligent power module, it is necessary to design a new power module, semiconductor and packaging method.

[0004] It should be noted that the above information disclosed in this background technology section is only used to understand the background technology of the present application concept, and therefore, the above description is not considered to constitute information of the prior art. Summary of the Invention

[0005] The embodiments of the present disclosure at least provide a high power density intelligent power module, a semiconductor, and a packaging method.

[0006] In a first aspect, an embodiment of the present disclosure provides a power module, including: A copper-embedded substrate is provided with a control circuit area and a copper-embedded bearing area, wherein the copper-embedded bearing area semi-surrounds the control circuit area, and a portion of the control circuit area extends into the copper-embedded bearing area; The embedded copper bearing area includes a plurality of embedded coppers arranged on the embedded copper substrate, at least one power chip is arranged on the top surface of the embedded copper, and the embedded copper is electrically connected to the corresponding power chip, and the bottom surface of the embedded copper forms a power pin electrode on the bottom surface of the embedded copper substrate; The control circuit area is provided with a chip peripheral circuit and at least one control chip, the control chip is electrically connected to the chip peripheral circuit, and the control chip is provided on the top surface of the embedded copper substrate; The chip peripheral circuit forms a control pin electrode on the bottom surface of the embedded copper substrate; The power chip is electrically connected to the chip peripheral circuit.

[0007] The control circuit area includes: an insulating layer; The insulating layer is arranged in the copper-embedded substrate, and the adjacent conductive layers in the control circuit area are isolated by the insulating layer, thereby forming a control circuit.

[0008] In an optional embodiment, the power chip is electrically connected to the chip peripheral circuit via bonding wires or wire clips.

[0009] In an optional embodiment, a plastic package is provided on the copper-embedded substrate to protect and support the control circuit area and the copper-embedded bearing area; The power pin electrode and the control pin electrode are exposed from the plastic package.

[0010] In an optional embodiment, the insulating layer is made of at least one of epoxy resin, glass fiber cloth, ceramic, polytetrafluoroethylene, polyimide, polyester and phenolic resin.

[0011] In an optional embodiment, the control chip has a bump electrode and is electrically connected to the chip peripheral circuit by a flip-chip method.

[0012] In an optional embodiment, the embedded copper is of an up-and-down straight-through type or a step-type in the vertical structure.

[0013] In a second aspect, an embodiment of the present disclosure further provides a semiconductor device, comprising: The power module mentioned above.

[0014] In a third aspect, an embodiment of the present disclosure further provides a packaging method for the power module, comprising: Soldering or sintering the power chip to the copper-embedded bearing area of ​​the copper-embedded substrate, and installing the control chip to the control circuit area, and curing; The power chip and the control chip are electrically connected to the chip peripheral circuit through wire bonding or clip welding, so that the power chip and the control chip are electrically connected to the chip peripheral circuit.

[0015] In an optional embodiment, the copper-embedded substrate is packaged and then cut to form power module units.

[0016] The beneficial effect of the present invention is that the power module includes: a copper-embedded substrate, on which a control circuit area and an embedded copper-carrying area are provided, and the embedded copper-carrying area semi-surrounds the control circuit area; the embedded copper-carrying area includes a plurality of embedded coppers arranged on the copper-embedded substrate, and at least one power chip is provided on the top surface of the embedded copper, and the embedded copper is electrically connected to the corresponding power chip, and the bottom surface of the embedded copper forms a power pin electrode on the bottom surface of the copper-embedded substrate; a chip peripheral circuit and at least one control chip are provided in the control circuit area, and the control chip is electrically connected to the chip peripheral circuit, and the control chip is provided on the top surface of the copper-embedded substrate; the chip peripheral circuit forms a control pin electrode on the bottom surface of the copper-embedded substrate; the power chip is electrically connected to the chip peripheral circuit, thereby reducing the area of ​​the control circuit area, providing a larger installation area for the power chip, and improving the power density.

[0017] Other features and advantages of the present invention will be described in the following description, and in part will become apparent from the description, or understood by practicing the present invention. The purpose and other advantages of the present invention are realized and obtained by the structures particularly pointed out in the description and the drawings.

[0018] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, preferred embodiments are specifically cited herein and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the specific embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0020] Figure 1 A schematic structural diagram of a high power density intelligent power module provided by an embodiment of the present disclosure; Figure 2 A schematic diagram of the back side of a high power density intelligent power module provided by an embodiment of the present disclosure; Figure 3 A schematic structural diagram corresponding to a wire bonding connection provided in an embodiment of the present disclosure; Figure 4 A schematic structural diagram of a wire clamp connection provided by an embodiment of the present disclosure; Figure 5 A schematic diagram of a high power density intelligent power module matrix provided in an embodiment of the present disclosure.

[0021] In the picture: 1 embedded copper substrate, 11 control circuit area, 12 embedded copper bearing area, 13 insulation layer; 2 embedded copper, 21 power chips; 3. Control chip; 4 control pin electrodes; 5 power pin electrodes; 6 welding wires, 61 wire clamps; 7. Plastic sealing body. DETAILED DESCRIPTION

[0022] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of them. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0023] As used herein, the phrases "in one embodiment," "according to one embodiment," "in some embodiments," and the like generally refer to the fact that the particular feature, structure, or characteristic following the phrase may be included in at least one embodiment of the present disclosure. Thus, a particular feature, structure, or characteristic may be included in more than one embodiment of the present disclosure, such that these phrases do not necessarily refer to the same embodiment. As used herein, the terms "example," "exemplary," and the like are used to "serve as an example, instance, or illustration." Any implementation, aspect, or design described herein as "example" or "exemplary" is not necessarily to be construed as preferred or advantageous over other implementations, aspects, or designs. Instead, the use of the terms "example," "exemplary," and the like is intended to present concepts in a concrete manner.

[0024] Existing intelligent power module products are restricted by the frame structure, making multi-chip wiring difficult and performance optimization difficult. The inventors found that surface-mount intelligent power modules, in particular, have difficulty in realizing their high power density advantage.

[0025] The defects in the above solutions are the results obtained by the inventors after practice and careful research. Therefore, the discovery process of the above problems and the solutions proposed by the present disclosure in this article should be the contributions made by the inventors to the present disclosure during the disclosure process.

[0026] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0027] The following embodiments of the present invention are described in detail with reference to the accompanying drawings. In the absence of conflict, the following embodiments and features therein may be combined with each other.

[0028] like Figure 1 and Figure 2As shown, at least one disclosed embodiment provides a power module, which is a high-power density intelligent power module, comprising: a copper-embedded substrate 1, on which a control circuit area 11 and an embedded copper bearing area 12 are arranged, the embedded copper bearing area 12 semi-surrounds the control circuit area 11, and part of the control circuit area 11 extends into the copper-embedded bearing area 12; the embedded copper bearing area 12 includes a plurality of embedded coppers 2 arranged on the copper-embedded substrate 1, at least one power chip 21 is arranged on the top surface of the embedded copper 2, and the embedded copper 2 is electrically connected to the corresponding power chip 21, and the bottom surface of the embedded copper 2 forms a power pin electrode 5 on the bottom surface of the copper-embedded substrate 1; a chip peripheral circuit and at least one control chip 3 are arranged in the control circuit area 11, the control chip 3 is electrically connected to the chip peripheral circuit, and the control chip 3 is arranged on the top surface of the copper-embedded substrate 1; the chip peripheral circuit forms a control pin electrode 4 on the bottom surface of the copper-embedded substrate 1; the power chip 21 is electrically connected to the chip peripheral circuit, thereby reducing the area of ​​the control circuit area 11, providing a larger installation area for the power chip 21, and improving the power density.

[0029] In this embodiment, the copper embedded bearing area 12 is Figure 1 The dotted line portion corresponds to the area enclosed, so that the control circuit area 11 partially surrounds the copper-embedded support area 12 , and part of the control circuit area 11 extends into the copper-embedded support area 12 .

[0030] In this embodiment, the chip peripheral circuit is formed by partially covering the bottom surface of the copper-embedded substrate 1 with copper.

[0031] In this embodiment, the control chip 3 and the control circuit are electrically connected according to pin functions.

[0032] like Figure 3 As shown, in an optional embodiment, an insulating layer 13 is provided in the embedded copper substrate 1. The insulating layer 13 is an important component of the control circuit area 11. The adjacent conductive layers in the control circuit area 11 are isolated by the insulating layer 13, thereby forming a control circuit.

[0033] In this embodiment, a circuit wiring diagram including a pin electrode layout is drawn, and two or more layers of wiring are selected according to routing requirements, so that the control circuit area 11 can be a two-layer or multi-layer layout structure.

[0034] like Figure 3 and Figure 4 As shown, in an optional embodiment, the power chip 21 is electrically connected to the chip peripheral circuit through a bonding wire 6 or a wire clamp 61. The product structure is simple, the pads are reasonably distributed, and the production process is efficient, which is conducive to reducing production complexity and reducing costs.

[0035] In an optional embodiment, a plastic package 7 is provided on the copper-embedded substrate 1 to protect and support the control circuit area 11 and the copper-embedded bearing area 12 ; the power pin electrode 5 and the control pin electrode 4 are exposed from the plastic package 7 .

[0036] In this embodiment, the bottom surface of the plastic package body 7 is flush with the bottom surface of the copper-embedded substrate 1 .

[0037] In an optional embodiment, the insulating layer 13 is made of at least one of epoxy resin, glass fiber cloth, ceramic, polytetrafluoroethylene, polyimide, polyester and phenolic resin.

[0038] In an optional embodiment, the control chip 3 has bump electrodes and is electrically connected to the chip peripheral circuit by flip-chip mounting.

[0039] In an optional embodiment, the inlaid copper 2 is of an up-and-down straight-through type or a step-type in vertical structure.

[0040] In this embodiment, the shape of the embedded copper 2 can be circular or other specific shapes that are convenient for connection and relieve stress.

[0041] In this embodiment, the power chip 21 can be one or more, or one or more combinations of, MOSFET, JFET, IGBT, RC-IGBT, FRD, SBD, HEMT, etc., and also includes a power chip 21 with integrated functions such as temperature sensing and current detection functions on this basis; the material of the power chip 21 includes various generations of semiconductor materials such as silicon-based, silicon carbide-based, and gallium nitride-based, and can also be organic materials.

[0042] In this embodiment, at least one power chip 21 is disposed on the top surface of each embedded copper 2. The embedded copper 2 structure and technology provide a good thermal solution for the power chip 21 and support for improving power density.

[0043] In this embodiment, the control chip 3 may be one or more of an MCU, a high-side driver, a low-side driver, and a half-bridge driver.

[0044] In this embodiment, the control circuit area 11 can also be provided with at least one device or chip from the following free options: resistors, capacitors, inductors, NTCs, bootstrap diodes, and voltage regulator circuits; this facilitates further improvement of integration, and integrating peripheral resistors, capacitors, inductors, NTCs, bootstrap diodes, and voltage regulator circuits into the product hardly increases the complexity of production.

[0045] In comparison, the existing intelligent power module SOP23 package has a maximum installation size of a single power chip of 3.5mm×3.8mm, its plastic package size is 29mm×12mm, and the size including the pins is 29mm×17mm. In this embodiment, the same chip installation size is achieved and safety requirements are met. The package size including the pins does not exceed 16mm×16mm, which does not exceed 52% of the original package size.

[0046] At least one other disclosed embodiment further provides a semiconductor device including: the above-mentioned high power density intelligent power module.

[0047] At least one other disclosed embodiment also provides a packaging method for the above-mentioned high-power density intelligent power module, including: welding or sintering the power chip 21 to the copper-embedded supporting area 12 of the copper-embedded substrate 1, and installing the control chip 3 to the control circuit area 11, and curing; electrically connecting the power chip 21 and the control chip 3 to the chip peripheral circuit through bonding wires 6 or clip welding, so that the power chip 21 and the control chip 3 are electrically connected to the chip peripheral circuit; optionally, this process may also include welding resistors, capacitors, inductors, NTCs, bootstrap diodes and other devices to the control circuit and forming an electrical connection; and packaging the copper-embedded substrate 1 and the power chip 21 and control chip 3.

[0048] In this embodiment, a circuit wiring diagram including a pin electrode layout is drawn for a high-power density intelligent power module, and two or more layers of wiring are selected according to the routing requirements; the wiring of each layer is completed by lamination or printing and sintering, and windows are made at two locations where copper is embedded; the portion where the wiring needs to be connected to the pin electrode portion is electrically connected by through-hole copper plating; a copper block is embedded in the window portion and pressed together.

[0049] like Figure 5 As shown, in an optional embodiment, after the embedded copper substrate 1 is packaged, the high power density intelligent power module matrix is ​​cut to form a power module monomer, and then the pin electrodes (power pin electrodes 5 and control pin electrodes 4) are electroplated.

[0050] To sum up, the high-power density intelligent power module includes: a copper-embedded substrate 1, on which a control circuit area 11 and an embedded copper bearing area 12 are provided, and the embedded copper bearing area 12 semi-surrounds the control circuit area 11; the embedded copper bearing area 12 includes a plurality of embedded coppers 2 arranged on the copper-embedded substrate 1, and at least one power chip 21 is provided on the top surface of the embedded copper 2, and the embedded copper 2 is electrically connected to the corresponding power chip 21, and the bottom surface of the embedded copper 2 forms a power pin electrode 5 on the bottom surface of the copper-embedded substrate 1; a chip peripheral circuit and at least one control chip 3 are provided in the control circuit area 11, and the control chip 3 is electrically connected to the chip peripheral circuit, and the control chip 3 is provided on the top surface of the copper-embedded substrate 1; the chip peripheral circuit forms a control pin electrode 4 on the bottom surface of the copper-embedded substrate 1; the power chip 21 is electrically connected to the chip peripheral circuit, thereby reducing the area of ​​the control circuit area 11, providing a larger installation area for the power chip 21, and improving the power density.

[0051] In the description of the embodiments of the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0052] In the description of the present invention, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, terms such as "first", "second" and other numerical terms do not imply an order or sequence when used herein unless expressly indicated above. Therefore, without departing from the teachings of the example embodiments, the first element, component, region, layer or section discussed above may be referred to as a second element, component, region, layer or section.

[0053] Spatially relative terms, such as "inside," "outside," "below," "beneath," "below," "above," "upper," etc., may be used herein to describe the relationship of one element or feature to another element or feature as illustrated in the figures. Spatially relative terms may be intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures were turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features.

[0054] With the above-described preferred embodiments of the present invention as a guide, and with reference to the above description, relevant personnel are fully capable of making various changes and modifications without departing from the technical scope of this invention. The technical scope of this invention is not limited to the contents of the specification and must be determined according to the scope of the claims.

Claims

1. A power module, characterized in that: include: A copper-embedded substrate (1) is provided with a control circuit area (11) and a copper-embedded bearing area (12), wherein the copper-embedded bearing area (12) semi-surrounds the control circuit area (11), and a portion of the control circuit area (11) extends into the copper-embedded bearing area (12); The embedded copper bearing area (12) comprises a plurality of embedded coppers (2) arranged on the embedded copper substrate (1), at least one power chip (21) is arranged on the top surface of the embedded copper (2), and the embedded copper (2) and the corresponding power chip (21) are electrically connected, and the bottom surface of the embedded copper (2) forms a power pin electrode (5) on the bottom surface of the embedded copper substrate (1); The control circuit area (11) is provided with a chip peripheral circuit and at least one control chip (3), the control chip (3) being electrically connected to the chip peripheral circuit, and the control chip (3) being provided on the top surface of the embedded copper substrate (1); The chip peripheral circuit forms a control pin electrode (4) on the bottom surface of the embedded copper substrate (1); The power chip (21) is electrically connected to the chip peripheral circuit.

2. The power module according to claim 1, wherein: The control circuit area (11) includes: an insulating layer (13); The insulating layer (13) is arranged in the copper-embedded substrate (1), and the adjacent conductive layers in the control circuit area (11) are isolated by the insulating layer (13), thereby forming a control circuit.

3. The power module according to claim 1, wherein: The power chip (21) is electrically connected to the chip peripheral circuit via a bonding wire (6) or a wire clamp (61).

4. The power module according to claim 1, wherein: A plastic package (7) is provided on the copper-embedded substrate (1) to protect and support the control circuit area (11) and the copper-embedded bearing area (12); The power pin electrode (5) and the control pin electrode (4) are exposed from the plastic package (7).

5. The power module according to claim 2, wherein: The material of the insulating layer (13) is at least one of epoxy resin, glass fiber cloth, ceramic, polytetrafluoroethylene, polyimide, polyester and phenolic resin.

6. The power module according to claim 1, wherein: The control chip (3) is provided with a bump electrode and is electrically connected to the chip peripheral circuit by a flip-chip method.

7. The power module according to claim 1, wherein: The inlaid copper (2) is of an up-and-down straight-through type or a step-type in vertical structure.

8. A semiconductor, characterized in that include: The power module according to any one of claims 1 to 7.

9. A packaging method for a power module according to any one of claims 1 to 7, characterized in that: include: Soldering or sintering the power chip (21) to the copper-embedded bearing area (12) of the copper-embedded substrate (1), and installing the control chip (3) to the control circuit area (11) and then curing; The power chip (21) and the control chip (3) are electrically connected to the chip peripheral circuit respectively through bonding wires (6) or clip welding, so that the power chip (21) and the control chip (3) are electrically connected to the chip peripheral circuit respectively.

10. The packaging method according to claim 9, wherein: The embedded copper substrate (1) is packaged and then cut to form a power module monomer.

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