Semiconductor laser dynamic beam shaping system and method

Abstract

The invention provides a semiconductor laser dynamic beam shaping system and method, and relates to the technical field of semiconductor laser. The light emitting direction of the system is the vertical direction, and the system sequentially comprises a laser emitting module, a dynamic shaping module and a light beam homogenizing module in the light emitting direction. The dynamic shaping module comprises a liquid lens and transparent electrodes located on the upper side and the lower side of the liquid lens. The liquid lens comprises a transparent outer shell, the outer shell is filled with conductive liquid and insulating liquid which are immiscible with each other, and a liquid interface is formed between the conductive liquid and the insulating liquid. When the light emitting direction is vertically downward, the density of the conductive liquid is greater than that of the insulating liquid; when the light emitting direction is vertically upward, the density of the conductive liquid is smaller than that of the insulating liquid. The system can realize real-time adjustment of the size, the shape and the energy distribution of the semiconductor laser spot, is simple to operate and low in cost, and can realize continuous adjustment.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor laser technology, in particular to a semiconductor laser dynamic beam shaping system and method. Background Art

[0002] To optimize semiconductor laser performance, adapt to the needs of different application scenarios, and ensure system reliability and efficiency, adjustments must be made to the size, shape, and energy distribution of the semiconductor laser spot. For example, spot size directly affects processing accuracy: a smaller spot allows for more precise processing, while a larger spot may be used for rapid surface treatment. Uneven spot energy distribution can lead to uneven ablation of the processed material, and adjusting the spot shape can improve processing consistency. Similarly, precise control of spot size and energy density is required in medical laser surgery or skin treatments to avoid damaging healthy tissue.

[0003] However, existing semiconductor lasers usually achieve adjustment and switching of different spot sizes by replacing interchangeable lenses with fixed focal length lenses. This not only has the disadvantages of cumbersome operation, high hardware cost, and inability to adjust in real time, but also cannot achieve continuous adjustment. Summary of the Invention

[0004] To address the above issues, the present application provides a semiconductor laser dynamic beam shaping system and method, which can achieve real-time adjustment of the size, shape and energy distribution of the semiconductor laser spot. It is not only simple to operate and has low hardware cost, but also can achieve continuous adjustment.

[0005] The technical solution adopted by the present invention to solve the technical problem is:

[0006] A semiconductor laser dynamic beam shaping system, the light emitting direction is vertical, and includes a laser emission module, a dynamic shaping module and a beam homogenization module in sequence along the light emitting direction;

[0007] The dynamic shaping module includes a liquid lens and transparent electrodes located on the upper and lower sides of the liquid lens;

[0008] The liquid lens comprises a transparent outer shell filled with an immiscible conductive liquid and an insulating liquid, and a liquid interface is formed between the conductive liquid and the insulating liquid;

[0009] When the light emission direction is vertically downward, the density of the conductive liquid is greater than the density of the insulating liquid;

[0010] When the light emission direction is vertically upward, the density of the conductive liquid is less than the density of the insulating liquid.

[0011] Furthermore, the laser emission module includes a bar and a fast axis compression lens located on the light emitting side of the bar.

[0012] Furthermore, after the light beam emitted by the bar is compressed by the fast-axis compression lens, the fast-axis divergence angle is equivalent to the slow-axis divergence angle.

[0013] Furthermore, the outer shell is made of sapphire or quartz material.

[0014] Furthermore, the conductive liquid is salt water, and the insulating liquid is fluorinated liquid.

[0015] Furthermore, the electrodes are made of transparent ITO conductive glass.

[0016] Furthermore, the beam homogenization module is an optical waveguide or a reflection cavity formed by a plurality of reflection surfaces.

[0017] Furthermore, a stop is provided on the light-emitting side of the beam homogenizing module.

[0018] Furthermore, a protective window is provided on the light-emitting side of the laser emission module.

[0019] A semiconductor laser dynamic beam shaping method applies a voltage between two electrodes and dynamically adjusts the curvature radius of the liquid interface by adjusting the voltage;

[0020] When the electrode on the light-incoming side is the positive electrode and the electrode on the light-outgoing side is the negative electrode, and a positive voltage is applied to the liquid lens, the liquid lens becomes a convex lens, which converges the light beam.

[0021] When the electrode on the light-incoming side is used as the negative electrode and the electrode on the light-emitting side is used as the positive electrode, and a reverse voltage is applied to the liquid lens, the liquid lens becomes a concave lens, which diverges the light beam.

[0022] The beneficial effects of the present invention are:

[0023] The present invention provides a semiconductor laser dynamic beam shaping system and method. First, the fast-axis divergence angle of the light beam emitted by the laser strip is compressed by a fast-axis compression lens. The fast-axis compressed light beam is then incident on a liquid lens. By adjusting the voltage applied between the electrodes on the front and rear sides of the liquid lens, the curvature of the interface between the conductive liquid and the insulating liquid in the liquid lens is changed, achieving dynamic adjustment of the focal length of the liquid lens. The fast axis of the light beam passing through the liquid lens is converged or diverged to adjust the size, shape, and energy distribution of the light spot. Finally, the light beam is incident on a beam homogenization module behind the liquid lens, thereby obtaining a uniform light spot on the receiving surface. Because the adjustment process does not require any hardware replacement, only the voltage applied between the electrodes on the front and rear sides of the liquid lens needs to be adjusted. Therefore, the system is not only simple to operate and has low hardware cost, but also can continuously adjust the size, shape, and energy distribution of the semiconductor laser spot in real time, ensuring safety and efficiency in the medical field and improving precision and adaptability in industrial processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 A schematic diagram of the fast-axis optical path corresponding to the formation of a first light spot by a semiconductor laser dynamic beam shaping system provided in an embodiment of the present application;

[0025] Figure 2 is the optical simulation diagram of the first light spot;

[0026] Figure 3 A schematic diagram of the fast-axis optical path corresponding to the formation of a second light spot by a semiconductor laser dynamic beam shaping system provided in an embodiment of the present application;

[0027] Figure 4 is the optical simulation diagram of the second light spot;

[0028] Figure 5 A schematic diagram of the fast-axis optical path corresponding to the formation of a third light spot by a semiconductor laser dynamic beam shaping system provided in an embodiment of the present application;

[0029] Figure 6 is the optical simulation diagram of the third light spot;

[0030] Figure 7 A schematic diagram of the slow-axis optical path of a semiconductor laser dynamic beam shaping system provided in an embodiment of the present application.

[0031] In the figure: 11, bar; 12, fast axis compression lens;

[0032] 21. Liquid lens; 211. Outer shell; 212. Conductive liquid; 213. Insulating liquid; 214. Liquid interface; 22. Transparent electrode;

[0033] 3. Beam homogenization module;

[0034] 4. Aperture;

[0035] 5. Protect the window. DETAILED DESCRIPTION

[0036] In order to enable those skilled in the art to better understand the technical solutions in this application, the technical solutions in the embodiments of this application will be described in detail below in conjunction with the drawings in the embodiments of this application. The described embodiments are only part of the embodiments of this application, not all of the embodiments. All other embodiments obtained by those skilled in the art without creative work based on the embodiments of this application should fall within the scope of protection of this application.

[0037] like Figure 1 As shown, a semiconductor laser dynamic beam shaping system has a vertical light emitting direction and includes a laser emission module, a dynamic shaping module and a beam homogenization module 3 in sequence along the light emitting direction.

[0038] The laser emission module includes a beam strip 11 and a fast-axis compression lens 12 located on the light-emitting side of the beam strip 11. Because the beam emitted by beam strip 11 is Gaussian, the far-field divergence angle is asymmetric along the fast and slow axes, resulting in an elliptical far-field spot. Therefore, the fast-axis compression lens 12 is first used to compress the fast-axis divergence angle.

[0039] As a specific embodiment, the laser emission module described in this embodiment includes eight bars 11, arranged uniformly in a horizontal array. Each bar 11 has a light-emitting area of ​​16 mm by 10 mm. Each bar 11 is equipped with a fast-axis compression lens 12 on its light-emitting side. The light beam emitted by each bar 11 passes through the corresponding fast-axis compression lens 12 to compress the fast-axis divergence angle.

[0040] Furthermore, after the light beam emitted from the bar 11 is compressed by the fast-axis compression lens 12 , the fast-axis divergence angle is equivalent to the slow-axis divergence angle.

[0041] As a specific implementation, the fast-axis compression lens 12 in this embodiment compresses the fast-axis divergence angle of the light beam emitted by the bar 11 to 10°.

[0042] The dynamic shaping module includes a liquid lens 21 and transparent electrodes 22 located on the upper and lower sides of the liquid lens 21 , and the electrodes are tightly fitted with the outer shell 211 .

[0043] The liquid lens 21 includes an outer shell 211, which is made of a hard transparent material. The outer shell 211 is filled with a conductive liquid 212 and an insulating liquid 213. The conductive liquid 212 and the insulating liquid 213 are immiscible, and a liquid interface 214 is formed between the conductive liquid 212 and the insulating liquid 213. When the laser emission module is upward (i.e., the light emission direction is vertically downward), the density of the conductive liquid 212 is greater than the density of the insulating liquid 213. When the laser emission module is downward (i.e., the light emission direction is vertically upward), the density of the conductive liquid 212 is less than the density of the insulating liquid 213.

[0044] Preferably, the outer shell 211 is made of sapphire or quartz, the conductive liquid 212 is salt water, the insulating liquid 213 is fluoride liquid, and the electrodes are made of transparent ITO conductive glass.

[0045] As a specific embodiment, the outer shell 211 in this embodiment is made of sapphire material, the laser emission module is located on the upper part, and the conductive liquid 212 is a saturated CsCl solution with a concentration of 1.9 g / cm 3 The insulating liquid 213 is FC-40, with a density of 1.82 g / cm 3 .

[0046] The beam homogenization module 3 is an optical waveguide or a reflection cavity formed by a plurality of reflection surfaces. Figure 7 As shown, the beam homogenizing module 3 only performs homogenizing in the slow axis direction.

[0047] Here, both the optical waveguide and the reflective cavity formed by a plurality of reflective surfaces are prior arts in this field, and will not be described in detail here.

[0048] As a specific implementation, the beam homogenization module 3 described in this embodiment is an optical waveguide.

[0049] Furthermore, a diaphragm 4 is provided on the light-emitting side of the beam homogenizing module 3 , and the diaphragm 4 is used to filter out virtual light at the edge, so that the energy of the emitted light is more concentrated.

[0050] Furthermore, a protective window 5 is provided on the light-emitting side of the laser emitting module, and the protective window 5 is used to protect the light-emitting surface of the laser emitting module to prevent damage and contamination.

[0051] A semiconductor laser dynamic beam shaping method, the specific operation of which is to apply a voltage between two electrodes and change the contact angle between the conductive liquid 212 and the insulating liquid 213 by adjusting the magnitude and direction of the applied voltage, thereby dynamically adjusting the curvature radius of the liquid interface 214.

[0052] The relationship between the curvature radius of the liquid interface 214 and the voltage is approximately:

[0053]

[0054] Where: γ is the liquid-liquid interfacial tension;

[0055] E is the electric field intensity;

[0056] V is the driving voltage.

[0057] When a positive voltage is applied to the liquid lens, with the electrode on the light-incoming side as the positive electrode and the electrode on the light-outgoing side as the negative electrode, the positive ions in the conductive liquid 212 gather toward the negative electrode (in the direction of light emitting), and the droplets spread more significantly on the negative electrode side. The conductive liquid 212 is pulled toward the light-emitting side, and the liquid interface 214 bulges toward the light-emitting side. As the applied positive voltage increases, the degree of bulge of the liquid interface 214 toward the light-emitting side increases, and the curvature of the liquid interface 214 increases. In this case, the liquid lens 21 acts as a convex lens, converging the light beam.

[0058] When a reverse voltage is applied to the liquid lens, with the electrode on the light-entering side as the negative electrode and the electrode on the light-emitting side as the positive electrode, the positive ions in the conductive liquid 212 gather toward the negative electrode (in the direction of light entry), and the droplets spread more significantly on the negative electrode side. The conductive liquid 212 is pulled toward the light-entering side, and the liquid interface 214 bulges toward the light-entering side. As the applied reverse voltage increases, the degree of bulge of the liquid interface 214 toward the light-entering side increases, and the curvature of the liquid interface 214 increases. In this case, the liquid lens 21 acts as a concave lens, diverging the light beam.

[0059] When a continuously changing voltage is applied to the two electrodes, the liquid interface 214 changes continuously, and accordingly a continuously changing spot size can be obtained.

[0060] As a specific embodiment, in this embodiment, three different spot sizes are obtained by applying voltages of different strengths and directions to the two electrode plates. The first voltage applied is a forward voltage, and the liquid interface 214 obtained is as follows: Figure 1 As shown, the first light spot obtained is Figure 2 As shown, the size is 8mm*10mm. The second voltage applied is a forward voltage with a strength less than the first voltage, and the liquid interface 214 is obtained as shown in FIG. Figure 3 As shown, the second light spot is obtained as Figure 4As shown, the size is 14mm*10mm. The third voltage applied is a reverse voltage, and the liquid interface 214 is as shown in FIG. Figure 5 As shown, the third light spot is obtained as Figure 6 As shown, the size is 22mm*10mm. This size is currently the most commonly used in the field of medical aesthetics. Larger spot sizes can cover a larger area, allowing for faster processing and shortening treatment time, while smaller spots can be used for precise treatment and reduce damage to surrounding skin.

[0061] Other embodiments obtained by those skilled in the art by combining, splitting, reorganizing, etc. the embodiments provided in this application do not exceed the scope of protection of this application.

[0062] The above specific implementation methods provide a detailed description of the purpose, technical solutions and beneficial effects of the embodiments of the present application. The above is only a specific implementation method of the embodiments of the present application and is not intended to limit the scope of protection of the embodiments of the present application. That is, any modifications, equivalent replacements, improvements, etc. made on the basis of the embodiments of the present application should be included in the scope of protection of the embodiments of the present application.

Claims

1. A semiconductor laser dynamic beam shaping system, characterized by: The light emitting direction is a vertical direction, and the system includes a laser emission module, a dynamic shaping module and a beam homogenization module (3) in sequence along the light emitting direction; The dynamic shaping module comprises a liquid lens (21) and transparent electrodes (22) located on the upper and lower sides of the liquid lens (21); The liquid lens (21) comprises a transparent outer shell (211), wherein the outer shell (211) is filled with an immiscible conductive liquid (212) and an insulating liquid (213), and a liquid interface (214) is formed between the conductive liquid (212) and the insulating liquid (213); When the light emission direction is vertically downward, the density of the conductive liquid (212) is greater than the density of the insulating liquid (213); When the light emitting direction is vertically upward, the density of the conductive liquid (212) is less than the density of the insulating liquid (213).

2. The semiconductor laser dynamic beam shaping system according to claim 1, characterized in that: The laser emission module comprises a bar (11) and a fast axis compression lens (12) located on the light-emitting side of the bar (11).

3. The semiconductor laser dynamic beam shaping system according to claim 2, characterized in that: After the light beam emitted from the bar (11) is compressed by the fast-axis compression lens (12), the fast-axis divergence angle is equivalent to the slow-axis divergence angle.

4. The semiconductor laser dynamic beam shaping system according to claim 1, characterized in that: The outer shell (211) is made of sapphire or quartz material.

5. The semiconductor laser dynamic beam shaping system according to claim 1, characterized in that: The conductive liquid (212) is salt water, and the insulating liquid (213) is fluorinated liquid.

6. The semiconductor laser dynamic beam shaping system according to claim 1, characterized in that: The electrodes are made of transparent ITO conductive glass.

7. The semiconductor laser dynamic beam shaping system according to claim 1, characterized in that: The light beam homogenization module (3) is an optical waveguide or a reflection cavity formed by enclosing a plurality of reflection surfaces.

8. The semiconductor laser dynamic beam shaping system according to claim 1, characterized in that: A stop (4) is provided on the light-emitting side of the light beam homogenizing module (3).

9. The semiconductor laser dynamic beam shaping system according to claim 1, characterized in that: A protective window (5) is provided on the light-emitting side of the laser emission module.

10. A shaping method using the semiconductor laser dynamic beam shaping system according to any one of claims 1 to 9, characterized in that: Applying a voltage between the two electrodes and dynamically adjusting the curvature radius of the liquid interface (214) by adjusting the magnitude of the voltage; When a positive voltage is applied to the liquid lens (21) with the electrode (22) on the light-incoming side as the positive electrode and the electrode (22) on the light-outgoing side as the negative electrode, the liquid lens (21) becomes a convex lens and converges the light beam; When the electrode (22) on the light-incoming side is used as the negative electrode and the electrode (22) on the light-emitting side is used as the positive electrode, and a reverse voltage is applied to the liquid lens (21), the liquid lens (21) becomes a concave lens and diverges the light beam.

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