Transient voltage suppression protection device

Abstract

According to the transient voltage suppression protection device provided by the invention, two forward diodes are connected in series, the breakdown voltage is 2Vf about 1.4 V after series connection, the requirement of working voltage below 1V can be met, but at the moment, the breakdown voltage of the other end is 2Vbr, and the requirement of bidirectional low-voltage working is not met; therefore, the structure is reversely connected in parallel to form the bidirectional low-capacitance low-turn-on characteristic transient voltage suppression protection device.

Description

Technical Field

[0001] The embodiments of the present application relate to the technical field of protection devices, and in particular to a transient voltage suppression protection device. Background Art

[0002] With the continuous development of electronic products and increasingly advanced back-end IC manufacturing processes, the tolerance of back-end electronic products to ESD (electrostatic discharge) and EOS (electrical overstress) has become increasingly weak. This necessitates the addition of transient voltage suppression (TVS) devices to protect the back-end ICs of electronic products. At the same time, the decreasing power consumption of electronic products requires ever-lower chip operating voltages, placing higher demands on TVS devices, requiring lower turn-on voltages and smaller capacitance. Existing TVS products offer diode, SCR, and NPN characteristics. However, their lowest reverse breakdown voltage is approximately 5V, which falls short of the low turn-on voltage requirement. Furthermore, their forward conduction voltage is only 0.7V, which also falls short of the operating voltage requirement. Summary of the Invention

[0003] In order to solve or alleviate the problems in the prior art, the present application provides a transient voltage suppression protection device, comprising: a substrate, a first well region, a second well region, a first injection region, a second injection region, a third injection region, and a fourth injection region;

[0004] The first well region, the second well region, the first injection region, the second injection region, the third injection region and the fourth injection region are all arranged in the substrate;

[0005] A fifth injection region is provided in the first well region, and a seventh injection region is provided in the second well region;

[0006] The sixth injection region is arranged in the first well region or in the substrate; the eighth injection region is arranged in the second well region or in the substrate;

[0007] The fifth injection region and the first well region form a first PN junction, and the substrate and the third injection region form a second PN junction; the seventh injection region and the second well region form a third PN junction, and the substrate and the first injection region form a fourth PN junction.

[0008] The substrate, the second injection region, the fourth injection region, the fifth injection region, and the seventh injection region are of the first doping type, and the first well region, the second well region, the first injection region, the third injection region, the sixth injection region, and the eighth injection region are of the second doping type.

[0009] As a preferred embodiment of the present application, the first doping type is P-type, and the second doping type is N-type.

[0010] In a second aspect, an embodiment of the present application further provides a transient voltage suppression protection device, comprising: a substrate, a first well region, a second well region, a fifth injection region, a sixth injection region, a seventh injection region, and an eighth injection region;

[0011] The first well region, the second well region, the fifth injection region, the sixth injection region, the seventh injection region and the eighth injection region are all provided in the substrate;

[0012] A third injection region is provided in the first well region, and a first injection region is provided in the second well region;

[0013] The fourth injection region is arranged in the first well region or in the substrate; the second injection region is arranged in the second well region or in the substrate;

[0014] The fifth injection region forms a first PN junction with the substrate, and the first well region forms a second PN junction with the third injection region; the seventh injection region forms a third PN junction with the substrate, and the second well region forms a fourth PN junction with the first injection region;

[0015] The first well region, the second well region, the second injection region, the fourth injection region, the fifth injection region, and the seventh injection region are of the first doping type, and the substrate, the first injection region, the third injection region, the sixth injection region, and the eighth injection region are of the second doping type.

[0016] As a preferred embodiment of the present application, the first doping type is P-type, and the second doping type is N-type.

[0017] Compared with the prior art, the embodiment of the present application provides a transient voltage suppression protection device, which connects two forward diodes in series. After series connection, the breakdown voltage is 2Vf, which is about 1.4V, which can meet the operating voltage requirement below 1V. However, at this time, the breakdown voltage of the other end is 2Vbr, which does not meet the bidirectional low-voltage working requirement. Therefore, this structure is reverse-connected in parallel to form a bidirectional low-capacitance and low-turn-on characteristic transient voltage suppression protection device. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation of the present application. Some specific embodiments of the present application will be described in detail in an illustrative and non-restrictive manner with reference to the drawings. The same reference numerals in the drawings indicate the same or similar components or parts. It should be understood by those skilled in the art that these drawings are not necessarily drawn to scale. In the drawings:

[0019] Figure 1 1 is a schematic diagram of a top view of the structure of the first embodiment provided in this application;

[0020] Figure 2 This is a schematic diagram of the top view of the structure of the second embodiment provided by this application;

[0021] Figure 3 This is a schematic diagram of the top view of the structure of the third embodiment provided in this application;

[0022] Figure 4 It is a schematic diagram of the top view structure of Example 4 provided in this application. DETAILED DESCRIPTION

[0023] In order to enable those skilled in the art to better understand the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of this application.

[0024] Example 1

[0025] like Figure 1 As shown, embodiment 1 of the present application provides a transient voltage suppression protection device, including: a substrate 9, a first well region 10, a second well region 11, a first injection region 1, a second injection region 2, a third injection region 3 and a fourth injection region 4;

[0026] The first well region 10, the second well region 11, the first injection region 1, the second injection region 2, the third injection region 3 and the fourth injection region 4 are all provided in the substrate 9;

[0027] A fifth injection region 5 is provided in the first well region 10 , and a seventh injection region 7 is provided in the second well region 11 ;

[0028] The sixth injection region 6 is provided in the first well region 10 , and the eighth injection region 8 is provided in the second well region 11 ;

[0029] The fifth injection region 5 forms a first PN junction with the first well region 10 , and the substrate 9 forms a second PN junction with the third injection region 3 ; the seventh injection region 7 forms a third PN junction with the second well region 11 , and the substrate 9 forms a fourth PN junction with the first injection region 1 .

[0030] The substrate 9, the second injection region 2, the fourth injection region 4, the fifth injection region 5, and the seventh injection region 7 are of the first doping type, and the first well region 10, the second well region 11, the first injection region 1, the third injection region 3, the sixth injection region 6, and the eighth injection region 8 are of the second doping type.

[0031] As a preferred embodiment of the present application, the first doping type is P-type, and the second doping type is N-type.

[0032] In the embodiment of the present application, since the reverse breakdown voltage of the PN junction formed between the first well region 10 and the substrate 9 is relatively high, the first well region 10 acts as an isolation device, so that the current can only flow through the first PN junction formed by the fifth injection region 5 and the first well region 10. Similarly, since the reverse breakdown voltage of the PN junction formed between the second well region 11 and the substrate 9 is relatively high, the second well region 11 acts as an isolation device, so that the current can only flow through the third PN junction formed by the seventh injection region 7 and the second well region 11.

[0033] It should be noted that in Figure 1 A PN-PN structure is formed at one end of the entire device to form a series structure of two forward diodes, and a PN-PN structure is also formed at the other end to form a series structure of two forward diodes. The two ends of the entire device are completely symmetrical, forming a bidirectional device structure. After the two forward diodes at one end of the entire device are connected in series, the breakdown voltage is 2Vf, about 1.4V, which can meet the operating voltage requirement below 1V. However, at this time, the other end of the device is reversely connected in parallel to form a bidirectional low-capacitance and low-turn-on characteristic transient voltage suppression protection device, which can solve the problem in the prior art that the breakdown voltage of the other end of the device is 2Vbr and does not meet the bidirectional low-voltage working requirements.

[0034] Example 2

[0035] like Figure 2 As shown, the difference between the second embodiment and the first embodiment is that the sixth injection region 6 and the eighth injection region 8 are both provided in the substrate 9 .

[0036] Example 3

[0037] like Figure 3 As shown, the difference between Example 3 and Example 1 is that the third injection region 3 and the fourth injection region 4 are both arranged in the first well region 10, the first injection region 1 and the second injection region 2 are both arranged in the second well region 11, and the doping types of the first well region 10, the second well region 11 and the substrate 9 are different from those in Example 1. In the embodiment of the present application, the first well region 10 and the second well region 11 are of the first doping type, and the substrate 9 is of the second doping type.

[0038] As a preferred embodiment of the present application, the first doping type is P-type, and the second doping type is N-type.

[0039] Example 4

[0040] like Figure 4 As shown, the difference between the fourth embodiment and the third embodiment is that the fourth injection region 4 and the second injection region 2 are both provided in the substrate 9 .

[0041] It should be noted that in the above embodiments Figures 1 to 4 IO1 and IO2 are input and output interfaces.

[0042] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some or all of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A transient voltage suppression protection device, characterized in that: include: a substrate, a first well region, a second well region, a first injection region, a second injection region, a third injection region, and a fourth injection region; The first well region, the second well region, the first injection region, the second injection region, the third injection region and the fourth injection region are all arranged in the substrate; A fifth injection region is provided in the first well region, and a seventh injection region is provided in the second well region; The sixth injection region is arranged in the first well region or in the substrate; the eighth injection region is arranged in the second well region or in the substrate; The fifth injection region and the first well region form a first PN junction, and the substrate and the third injection region form a second PN junction; the seventh injection region and the second well region form a third PN junction, and the substrate and the first injection region form a fourth PN junction. The substrate, the second injection region, the fourth injection region, the fifth injection region, and the seventh injection region are of the first doping type, and the first well region, the second well region, the first injection region, the third injection region, the sixth injection region, and the eighth injection region are of the second doping type.

2. A transient voltage suppression protection device according to claim 1, characterized in that: The first doping type is P type, and the second doping type is N type.

3. A transient voltage suppression protection device, characterized in that: include: a substrate, a first well region, a second well region, a fifth implantation region, a sixth implantation region, a seventh implantation region, and an eighth implantation region; The first well region, the second well region, the fifth injection region, the sixth injection region, the seventh injection region and the eighth injection region are all provided in the substrate; A third injection region is provided in the first well region, and a first injection region is provided in the second well region; The fourth injection region is arranged in the first well region or in the substrate; the second injection region is arranged in the second well region or in the substrate; The fifth injection region forms a first PN junction with the substrate, and the first well region forms a second PN junction with the third injection region; the seventh injection region forms a third PN junction with the substrate, and the second well region forms a fourth PN junction with the first injection region; The first well region, the second well region, the second injection region, the fourth injection region, the fifth injection region, and the seventh injection region are of the first doping type, and the substrate, the first injection region, the third injection region, the sixth injection region, and the eighth injection region are of the second doping type.

4. A transient voltage suppression protection device according to claim 3, characterized in that: The first doping type is P type, and the second doping type is N type.

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