Thermoluminescent material and preparation method thereof, adhesive, anti-hot-spot battery, preparation method and photovoltaic module

Abstract

The invention relates to the technical field of solar cells, and particularly provides a thermoluminescent material and a preparation method thereof, an adhesive, an anti-hot spot battery, a preparation method and a photovoltaic module. The invention aims to solve the problem that a back contact battery in the prior art cannot have an effect on hot spots of a battery piece. The thermoluminescent material disclosed by the invention is in a microcapsule type, a fully-inorganic perovskite doped material is taken as a capsule core, and PDMS is taken as a capsule wall. The thermoluminescent material provided by the invention can absorb high temperature generated in the shielding process, reduce the temperature of hot spots and protect the performance of the component, and in addition, the thermoluminescent material for absorbing heat can also convert the absorbed heat into visible light, so that the utilization rate of incident light is improved. The invention further provides an adhesive containing the thermoluminescent material, and the adhesive points formed by the adhesive are arranged on the front surface of the back contact battery, so that a battery piece of the back contact battery has a hot spot prevention effect, the component performance is protected, and the utilization rate of incident light is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and specifically provides a thermoluminescent material and a preparation method thereof, an adhesive, an anti-hot spot cell and a photovoltaic module. Background Art

[0002] Back-contact battery is a new type of battery technology that can improve the efficiency of batteries and modules. Its main feature is that there is no grid line blocking the front of the battery cell. The positive and negative electrodes of the battery cell are all distributed in a finger-like shape on the back of the battery cell, which greatly improves the efficiency of batteries and modules. A passivation film is provided on the front of the battery cell.

[0003] Because the positive and negative metal electrodes are located on the back of the cell, and there are no metal electrodes on the front, the passivation film comes into direct contact with the production line during the assembly process and any movement after the cell is manufactured. This makes it easily scratched by friction from other objects, affecting light absorption and, in turn, the cell's power generation efficiency. Therefore, the front of the cell is at high risk of being scratched immediately after production, adversely affecting subsequent assembly processes and the cell's power generation efficiency.

[0004] A hot spot occurs when a current mismatch occurs in the solar cells of a photovoltaic module, where the operating current exceeds the photocurrent of the mismatched solar cell. This creates a reverse voltage bias, causing the solar cell to become reverse biased. This solar cell then becomes a load, consuming the power normally generated by the solar cell, generating a large amount of heat and causing the temperature of the solar cell to rise. Generally, there are two main reasons for hot spots. One is that one or more solar cells in the photovoltaic module are partially or completely shaded during use. This is usually caused by the photovoltaic module being blocked by surrounding buildings, plants, bird droppings, dust, and other debris. The other is that there are problems with the electrical performance of the solar cells in the photovoltaic module. This may be caused by defects in the solar cell process, defects in the silicon, or impurity centers. It may also be caused by external forces during transportation and installation that cause solar cell fragments. If a photovoltaic module operates in a hot spot condition for a long time, it will affect the service life of the photovoltaic module. If the temperature is too high, it may even cause permanent damage to the solar module.

[0005] To address the issues of damaged passivation films and hot spot protection during transport of N-type battery production lines, CN202410383010.1 provides a number of spaced-apart isolation protrusions on at least one side of the battery cell body. These isolation protrusions protect the surface of the battery cell from scratches. Furthermore, during the stacking process, the isolation protrusions can form an isolation support between two battery cells, preventing the light-receiving surface of the battery from being scratched by the electrodes on the backlight side of the adjacent battery cell. The isolation protrusions also have specific limitations on their refractive index, shape, and surface structure. This method, by providing isolation protrusions on the surface of the battery cell, primarily protects the passivation film layer on the front of the back-contact battery from damage during transport, but has no effect on hot spots on the battery cells.

[0006] CN202122520549.1 sets a thermoluminescent block. When a local area of ​​a photovoltaic module is blocked to produce a hot spot effect, which causes local heating of the photovoltaic module, the heat is radiated to the thermoluminescent block in the package. The corresponding cell thermoluminescent block that produces the hot spot effect can emit visible light or produce a spectrum that the cell can absorb. The light returns to the cell to supplement the light irradiation of the blocked cell, so that the corresponding cell can generate electricity, thereby achieving power recovery, alleviating the risk of hot spots, and reducing heat generation. The thermoluminescent block in this patent application refers to a block composed of thermoluminescent material, and the material type can be magnesium tetraborate, lithium fluoride series materials, etc. The method focuses on describing the packaging position of the thermoluminescent block in the component, and its synergistic effect with other materials. In addition, CN202322115282.7 also discloses a thermoluminescent layer, focusing on protecting the position of the thermoluminescent layer in the component, and that it can be encapsulated in a film or act as a coating structure alone. These two methods focus on protecting the position of the thermoluminescent layer / block in the photovoltaic module. For example, the thermoluminescent layer can be set between the battery cell and the upper cover plate, and between the battery cell and the lower cover plate respectively; it is formed by doping thermoluminescent materials in the packaging film, at which time it has both thermoluminescence and packaging functions; the luminescent material can be lithium fluoride series, CaSO4, Mn, Li2B4O7, Cu or MgSiO4, etc.; it can be specifically selected according to the wavelength of light it needs to emit after absorbing heat; however, neither of these two methods provides a detailed description and experimental demonstration of how to select the thermoluminescent material, the amount of addition, its emission spectrum, thermoluminescence temperature, its luminous efficiency, thermal stability, etc., and there is no description of its anti-hot spot effect on the photovoltaic module.

[0007] Accordingly, this field requires a new technical solution to solve the above technical problems. Summary of the Invention

[0008] The present invention aims to solve the above technical problem, that is, to solve the problem in the prior art that the back contact battery has no effect on the hot spots of the battery cell.

[0009] In a first aspect, the present invention provides a thermoluminescent material, wherein the thermoluminescent material is in a microcapsule type, with a doped all-inorganic perovskite material as the capsule core and PDMS as the capsule wall.

[0010] In the preferred technical solution of the above thermoluminescent material, the doped all-inorganic perovskite material is Zr 4+ Doped CsCdCl3 perovskite materials, Mn 2+ One or more of doped CsCdCl3 perovskite materials and Ge-doped CsPbI3 perovskite materials.

[0011] In the preferred technical solution of the above thermoluminescent material, the doped all-inorganic perovskite material is Mn 2+ Doped CsCdCl3 perovskite materials.

[0012] In the preferred technical solution of the above-mentioned thermoluminescent material, the particle size of the doped all-inorganic perovskite material is 3 to 60 nm.

[0013] In a further preferred technical solution of the above-mentioned thermoluminescent material, the particle size of the doped all-inorganic perovskite material is 5 to 50 nm.

[0014] In a second aspect, the present invention provides a method for preparing the thermoluminescent material, comprising the following steps:

[0015] Providing a PDMS solution A formed by PDMS and a solvent;

[0016] Providing a perovskite solution B formed by a doped all-inorganic perovskite material and a solvent;

[0017] providing an emulsion formed of a perovskite solution B and a PDMS solution A;

[0018] Add curing agent 1 to the emulsion to solidify the PDMS to form the capsule wall of the microcapsule, and then wash and dry to obtain the microcapsule.

[0019] In the preferred technical solution of the above-mentioned method for preparing the thermoluminescent material, the mass ratio of the PDMS to the solvent is 1:(3-10).

[0020] In the preferred technical solution of the above-mentioned method for preparing the thermoluminescent material, the mass ratio of the doped all-inorganic perovskite material to the solvent is 1:(3-10).

[0021] In the preferred technical solution of the above-mentioned method for preparing the thermoluminescent material, the concentration of the all-inorganic perovskite material in the emulsion is 5-10%.

[0022] In the preferred technical solution of the above-mentioned method for preparing the thermoluminescent material, the amount of the curing agent 1 added to the emulsion is 0.1 to 0.5 wt %.

[0023] In a third aspect, the present invention provides an adhesive, wherein the adhesive comprises the above-mentioned thermoluminescent material or the thermoluminescent material prepared by the above-mentioned preparation method.

[0024] In the preferred technical solution of the above adhesive, the adhesive comprises the following components in parts by weight:

[0025] In a fourth aspect, the present invention provides a hot spot resistant battery, comprising:

[0026] N-type silicon substrate 8;

[0027] An N+ front surface field 7 and a front passivation anti-reflection film 6 are provided on the front surface of an N-type silicon substrate 8;

[0028] A tunneling oxide layer 9, a back passivation anti-reflection film 10, a P-type emitter 11 and an N-type emitter 12 are provided on the back side of an N-type silicon substrate 8;

[0029] Wherein, glue dots 4 are provided on the surface of the front passivation anti-reflection film 6 , and the glue dots 4 are formed by the adhesive.

[0030] In the preferred technical solution of the above-mentioned anti-hot spot battery, the glue dots 4 are evenly distributed on the surface of the front passivation anti-reflection film 6 and are located between the P-type and N-type main grids.

[0031] In the preferred technical solution of the above-mentioned hot spot prevention battery, a leakage channel 5 is provided at the fine gate of the P-type emitter 11 and / or the N-type emitter 12 .

[0032] In the preferred technical solution of the above-mentioned anti-hot spot battery, the glue dots 4 are evenly distributed on the surface of the front passivation anti-reflection film 6 and at locations other than the leakage channels 5 .

[0033] In the preferred technical solution of the hot spot protection battery, the number X of the leakage channels 5 satisfies 0<X≤100.

[0034] In the preferred technical solution of the above-mentioned hot spot prevention battery, the number Y of the glue dots 4 is 1 to 5 times the number X of the leakage channels 5 .

[0035] In the preferred technical solution of the above-mentioned hot spot prevention battery, the shape of the glue dots 4 is semicircular or triangular, preferably semicircular, and more preferably the diameter of the semicircular glue dots 4 is 1 mm to 5 mm.

[0036] In a fifth aspect, the present invention provides a method for preparing the hot spot-proof battery, comprising:

[0037] Clean the front side of the N-type silicon substrate 8 of the back contact cell;

[0038] Adjusting the viscosity of the adhesive to a preset value;

[0039] The adhesive having a viscosity adjusted to a preset value is dispensed onto the surface of the front passivation anti-reflection film 6 on the front surface of the N-type silicon substrate 8 to form adhesive dots 4 .

[0040] In the preferred technical solution of the above preparation method, the preset value is 5000-8000 mPa*s.

[0041] In a sixth aspect, the present invention provides a photovoltaic module, wherein the photovoltaic module includes the aforementioned hot spot anti-hot spot battery or the hot spot anti-hot spot battery prepared by the aforementioned method for preparing the hot spot anti-hot spot battery.

[0042] The thermoluminescent material, anti-hot spot cell and photovoltaic module of the present invention have the following technical effects:

[0043] 1. The thermoluminescent material provided by the present invention can absorb the high temperature generated during the shielding process, reduce the hot spot temperature, and protect the performance of the component. In addition, the thermoluminescent material that absorbs heat can also convert the absorbed heat into visible light, thereby improving the utilization rate of the incident light;

[0044] 2. The adhesive provided by the present invention contains the aforementioned thermoluminescent material. By providing glue spots formed by the adhesive on the front of the back-contact battery, the battery cells of the back-contact battery have glue spots with anti-hot spot effect. The glue spots can not only protect the passivation film layer on the front of the battery cell from being easily scratched or abraded during transportation; the thermoluminescent material in the glue spots can also absorb the high temperature generated during the shielding process, reduce the hot spot temperature, and protect the performance of the component. In addition, the thermoluminescent material that absorbs heat can also convert the absorbed heat into visible light, thereby improving the utilization rate of the incident light.

[0045] 3. The glue points with anti-hot spot effect provided by the present invention do not need to be removed, and the production line can be directly transferred. During the lamination process, the glue points form a fusion interface with the front adhesive film layer and the front passivation layer of the battery cell, thereby improving production efficiency.

[0046] 4. The thermoluminescent material in the adhesive dot with anti-hot spot effect of the present invention is encapsulated by encapsulation technology to ensure that the perovskite material is not affected by the catalyst in the organic silicone adhesive, thereby better protecting the thermoluminescent efficiency of the material;

[0047] 5. The present invention has been verified through experiments that when the number of glue points and leakage channels meets certain requirements, it can balance the efficiency of the cell and the anti-hot spot effect, thereby ensuring the high power required by the photovoltaic module and reducing the hot spot temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] The preferred embodiments of the present invention are described below with reference to the accompanying drawings, in which:

[0049] Figure 1 It is a schematic diagram of the structure of the hot spot protection battery;

[0050] Figure 2 This is a schematic diagram of the front-side passivation anti-reflection film structure containing semicircular glue dots;

[0051] Figure 3 It is a semicircular glue point distribution diagram (no leakage channel);

[0052] Figure 4 It is a semicircular glue point distribution diagram (with leakage channel);

[0053] Wherein, each mark in the accompanying drawing is as follows:

[0054] 4—glue point; 5—leakage channel; 6—front passivation anti-reflection film; 7—N+ front surface field; 8—N-type silicon substrate; 9—tunneling oxide layer; 10—back passivation anti-reflection film; 11—P-type emitter; 12—N-type emitter. DETAILED DESCRIPTION

[0055] The preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are only used to explain the technical principles of the present invention and are not intended to limit the scope of protection of the present invention.

[0056] In this application, the term "and / or" describes the relationship between associated objects, indicating that three possible relationships exist. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. A and B can be singular or plural. The character " / " generally indicates that the associated objects are in an "or" relationship.

[0057] In this application, "at least one" means one or more, and "more than one" means two or more. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0058] It should be understood that in the various embodiments of the present application, the size of the serial numbers of the above-mentioned processes does not mean the order of execution. Some or all of the steps can be executed in parallel or sequentially. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0059] The terms used in the embodiments of the present application are for the purpose of describing specific embodiments only and are not intended to limit the present application. The singular forms "a", "an", "the" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms unless the context clearly indicates otherwise.

[0060] The weights of the relevant components mentioned in the examples of this application may not only refer to the specific content of each component, but also represent the weight ratio between the components. Therefore, as long as the content of the relevant components is proportionally enlarged or reduced according to the examples of this application, it is within the scope disclosed in the examples of this application. Specifically, the mass described in the examples of this application may be a mass unit known in the chemical industry, such as μg, mg, g, kg, etc.

[0061] The terms "first" and "second" are used solely for descriptive purposes to distinguish objects, such as substances, from one another and should not be understood to indicate or imply relative importance or to implicitly specify the quantity of the technical features being referred to. For example, without departing from the scope of the embodiments of this application, a first XX may also be referred to as a second XX, and similarly, a second XX may also be referred to as a first XX. Thus, features defined as "first" or "second" may explicitly or implicitly include one or more of such features.

[0062] The experimental methods in the following examples are conventional methods unless otherwise specified. The materials, reagents, etc. used in the following examples are commercially available unless otherwise specified.

[0063] Based on the problem pointed out in the background art that back-contact cells in the prior art are ineffective in preventing hot spots on cell wafers, the present invention provides a thermoluminescent material and preparation method, an adhesive, a hot spot prevention cell, and a photovoltaic module. The thermoluminescent material provided by the present invention can absorb the high temperatures generated during the shielding process, reducing the hot spot temperature and protecting module performance. Furthermore, the heat-absorbing thermoluminescent material can convert the absorbed heat into visible light, thereby improving the utilization rate of incident light. Furthermore, an adhesive containing the thermoluminescent material is provided. By providing adhesive dots formed by the adhesive on the front surface of the back-contact cell, the cell wafer of the back-contact cell can be provided with a hot spot prevention effect, protecting module performance and improving the utilization rate of incident light.

[0064] Specifically, the present invention provides a thermoluminescent material in a first aspect, wherein the thermoluminescent material is in a microcapsule type, with a doped all-inorganic perovskite material as the capsule core and PDMS as the capsule wall.

[0065] The present invention uses a doped all-inorganic perovskite material as a capsule core and PDMS as a capsule wall to form a microcapsule-type thermoluminescent material, which can ensure that the doped all-inorganic perovskite material is not affected by the catalyst in the organic silicone adhesive and better protect the thermoluminescence efficiency of the material.

[0066] In some specific embodiments, the doped all-inorganic perovskite material is Zr 4+ Doped CsCdCl3 perovskite materials, Mn 2+ One or more of doped CsCdCl3 perovskite materials and Ge-doped CsPbI3 perovskite materials.

[0067] It should be noted that Zr 4+ Doped CsCdCl3 perovskite materials, Mn 2+ Doped CsCdCl3 perovskite materials and Ge-doped CsPbI3 perovskite materials are materials known in the prior art, and those skilled in the art can obtain them according to the methods of the prior art. 4+ The doped CsCdCl3 perovskite material can be Zr synthesized by hydrothermal reaction. 4+ Doped hexagonal CsCdCl3 perovskite, Mn 2+ The doped CsCdCl3 perovskite material can be prepared by the hydrothermal method using Mn 2+ Doped hexagonal CsCdCl3 perovskite single crystal long afterglow material.

[0068] It should be noted that in the present invention, the Zr 4+ 、Mn 2+ There is no particular limitation on the doping concentration of Mn and Ge. 2+ Mn in doped CsCdCl3 perovskite materials 2+ The doping concentration of Zr is 10%. For example, in some embodiments, 4+ Zr in doped CsCdCl3 perovskite materials 4+ The doping concentration is 5%.

[0069] In some preferred embodiments, the doped all-inorganic perovskite material is Mn 2+ Doped CsCdCl3 perovskite materials.

[0070] Mn 2+ It is an excellent luminescent center, which can bring unique luminescent properties to CsCdCl3 perovskite materials after doping. Experimental studies have shown that Mn 2+It can generate light emission of a specific wavelength, such as green light emission, or yellow or red light emission, that is, the emission wavelength range is 492 to 700 nm. This band is the quantum response range of the back-contact battery, which can increase the light absorption efficiency of the battery and improve the battery efficiency.

[0071] In addition, after a hot spot appears outdoors on a photovoltaic module, the hot spot temperature of a back-contact cell module with a leakage-free design is generally 140-150°C. When the light intensity is very strong in summer, the hot spot temperature can reach 170-180°C. For N-type modules, their open-circuit voltage and maximum power both have negative temperature coefficients, that is, the lower the temperature, the better the module performance. That is, when N-type modules operate at long-term hot spot temperatures, the risk of module reliability failure is very high.

[0072] Compared with some traditional luminescent materials, Mn 2+ Doped CsCdCl3 perovskite materials may have better resistance to thermal quenching. That is, at higher temperatures, the luminescence intensity of the material will not drop as sharply as other materials, and may even increase within a certain temperature range, which makes the material advantageous for use in high-temperature environments. Experiments have shown that in the case of a leakage-free design of N-type components, compared with other CsCdCl3 perovskite materials, Mn 2+ The addition of doped CsCdCl3 perovskite material can better reduce the hot spot temperature after the component is shaded and increase the power generation capacity of the component.

[0073] In some specific embodiments, the particle size of the doped all-inorganic perovskite material is 3 to 60 nm, for example, 3 nm, 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, or any value in between the above particle size ranges.

[0074] In some preferred embodiments, the particle size of the doped all-inorganic perovskite material is 5 to 50 nm, specifically 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, or any value between the above particle size ranges.

[0075] In a second aspect, the present invention provides a method for preparing the thermoluminescent material, comprising the following steps:

[0076] Providing a PDMS solution A formed by PDMS and a solvent;

[0077] Providing a perovskite solution B formed by a doped all-inorganic perovskite material and a solvent;

[0078] providing an emulsion formed of a perovskite solution B and a PDMS solution A;

[0079] Add curing agent 1 to the emulsion to solidify the PDMS to form the capsule wall of the microcapsule, and then wash and dry to obtain the microcapsule.

[0080] In some specific embodiments, the solvent used in the above preparation method includes, but is not limited to, toluene, tetrahydrofuran, chloroform, dichloromethane, ethyl acetate, or acetone. However, as a preferred embodiment, the solvent is toluene. The curing agent 1 used is an epoxy resin curing agent, such as ethylenediamine or polyetheramine. The polyetheramine can be model GE-7124B, purchased from Huibai New Materials Technology (Shanghai) Co., Ltd., with an amine value of 470-570 [mgKOH / g] and a mixing ratio of 100:30 by weight. Alternatively, it can be a hydrogenated silicone oil curing agent, such as a hydrogenated silicone oil with a hydrogen content of 1.0-2.0%.

[0081] In some specific embodiments, the mass ratio of PDMS to solvent is 1:(3-10), for example, 1:3, 1:4, 1:5, 1:6, 1:7, 1:8, 1:9, 1:10, or any value within the mass ratio range.

[0082] In some specific embodiments, the solvent used to form PDMS solution A is toluene, and the mass ratio of PDMS to toluene is 1:(3-10), for example, 1:3, 1:4, 1:5, 1:6, 1:7, 1:8, 1:9, 1:10, or any value within the mass ratio range.

[0083] In some specific embodiments, the mass ratio of the doped all-inorganic perovskite material to the solvent is 1:(3-10), for example, 1:3, 1:4, 1:5, 1:6, 1:7, 1:8, 1:9, 1:10, or any value within the mass ratio range.

[0084] In some specific embodiments, the solvent used to form the perovskite solution B is toluene, and the mass ratio of the doped all-inorganic perovskite material to toluene is 1:(3-10). For example, it can be 1:3, 1:4, 1:5, 1:6, 1:7, 1:8, 1:9, 1:10, or any value within the mass ratio range.

[0085] In some specific embodiments, the concentration of the all-inorganic perovskite material in the emulsion is 5-10%, for example, 5%, 8%, 10%, or any value within the concentration range.

[0086] It should be noted that the concentration of the all-inorganic perovskite material in the emulsion refers to the ratio of the mass of the all-inorganic perovskite material in the emulsion to the total mass of the emulsion.

[0087] In some specific embodiments, the amount of curing agent 1 added to the emulsion is 0.1-0.5 wt %, for example, 0.1 wt %, 0.3 wt %, 0.5 wt % or any value within the range.

[0088] In some specific embodiments, the curing agent 1 is a hydrogenated silicone oil curing agent (with a hydrogen content of 1.0-2.0%), and the amount of the hydrogenated silicone oil curing agent added to the emulsion is 0.1-0.5 wt %, for example, 0.1 wt %, 0.3 wt %, 0.5 wt %, or any value within the range.

[0089] In a third aspect, the present invention provides an adhesive, which comprises the above-mentioned thermoluminescent material or the thermoluminescent material prepared by the above-mentioned preparation method.

[0090] In some specific embodiments, the adhesive comprises the following components in parts by weight:

[0091] In some specific embodiments, the room temperature vulcanized silicone rubber (dealcoholized type) is a room temperature dealcoholized vulcanized silicone rubber commonly used in the art, such as Shin-Etsu KE-4895, Wacker RT 601, Dow Corning SE 9186, etc.

[0092] In some specific embodiments, the dispersant is one or more of polyether-modified silicone oil, carboxylates, sulfonates, polyethylene glycols, quaternary ammonium salts, and the like.

[0093] In some specific embodiments, the polyether-modified silicone oil is a polyether-modified silicone oil of model JH-331 provided by Jining Tangyi Chemical Co., Ltd.; the carboxylate dispersant includes a carboxylate phosphate ternary copolymer dispersant, a carboxylate ternary copolymer dispersant, etc., for example, it can be a carboxylate dispersant 550S, a carboxylate dispersant RD-95, a carboxylate dispersant LT-737F; the polyethylene glycol dispersant can be, for example, a polyethylene glycol 200 dispersant; the quaternary ammonium salt dispersant can be a quaternary ammonium salt dispersant of model CP-10.

[0094] In some specific embodiments, the light stabilizer is a hindered amine light stabilizer, a hindered phenol antioxidant, or the like.

[0095] In some specific embodiments, the hindered amine light stabilizer may be, for example, light stabilizer 292; and the hindered phenol antioxidant may be, for example, antioxidant 1135 or antioxidant 245.

[0096] In some embodiments, the coupling agent is γ-aminopropyltriethoxysilane (KH-550)、 One or more of γ-glycidyloxypropyltrimethoxysilane, isopropyl trioleyl titanate, aluminate coupling agent, etc.

[0097] In some specific embodiments, the curing agent 2 includes a condensation curing agent, including one or more of ethyl orthosilicate, propyl orthosilicate, methyltriacetoxysilane, and methyltrimethoxysilane.

[0098] In some specific embodiments, the catalyst is a low-activity catalyst, such as an amine catalyst, for example, dibutyltin dilaurate.

[0099] The present invention provides a fourth aspect of a hot spot prevention battery, such as Figure 1 As shown, the anti-hot spot battery includes:

[0100] N-type silicon substrate 8;

[0101] An N+ front surface field 7 and a front passivation anti-reflection film 6 are provided on the front surface of an N-type silicon substrate 8;

[0102] A tunneling oxide layer 9, a back passivation anti-reflection film 10, a P-type emitter 11 and an N-type emitter 12 are provided on the back side of an N-type silicon substrate 8;

[0103] The surface of the front passivation anti-reflection film 6 is provided with glue dots 4, and the glue dots 4 are formed by the adhesive. The front passivation anti-reflection film layer structure provided with glue dots 4 is as follows: Figure 2 shown.

[0104] In some specific embodiments, the glue dots 4 are evenly distributed on the surface of the front passivation anti-reflection film 6 and are located between the P-type and N-type main gates.

[0105] In some embodiments, Figure 4 As shown, a leakage channel 5 is provided at the fine gate of the P-type emitter 11 and / or the N-type emitter 12 .

[0106] In some specific embodiments, the glue dots 4 are evenly distributed on the surface of the front passivation anti-reflection film 6 and not at the location of the leakage channel 5 .

[0107] In some specific implementations, the number X of the leakage channels 5 satisfies 0<X≤100.

[0108] In some specific embodiments, the number Y of the glue dots 4 is 1 to 5 times the number X of the leakage channels 5 .

[0109] In the present invention, when the number X of leakage channels 5 satisfies 0<X≤100, when the number Y of glue dots 4 is controlled to be 1 to 5 times the number X of leakage channels 5, the surface of the battery cell is evenly distributed, and the anti-hot spot effect of the battery is best within this range.

[0110] In some specific embodiments, the shape of the glue dot 4 is semicircular or triangular, preferably semicircular, and more preferably the diameter of the semicircular glue dot 4 is 1 mm to 5 mm.

[0111] In the present invention, the shape of the glue dots 4 can be semicircular or triangular, and their primary function is to scatter a portion of the converted visible light back into the cell, thereby increasing the cell's utilization of more light. However, as a preferred embodiment, the glue dots 4 are semicircular in shape. Semicircular glue dots not only require lower precision in production equipment and require less investment, but also meet the requirements for light utilization.

[0112] In a fifth aspect, the present invention provides a method for preparing the hot spot-proof battery, comprising:

[0113] Clean the front side of the N-type silicon substrate 8 of the back contact cell;

[0114] Adjusting the viscosity of the adhesive to a preset value;

[0115] The adhesive having a viscosity adjusted to a preset value is dispensed onto the surface of the front passivation anti-reflection film 6 on the front surface of the N-type silicon substrate 8 to form adhesive dots 4 .

[0116] It is understood that the basic structure of the back-contact cell of the present invention, such as the N-type silicon substrate 8, the N+ front surface field 7 and the front passivation anti-reflection film 6 disposed on the front surface of the N-type silicon substrate 8, and the tunneling oxide layer 9, the back passivation anti-reflection film 10, the P-type emitter 11, and the N-type emitter 12 disposed on the back surface of the N-type silicon substrate 8, can all be prepared according to conventional methods known in the art. The only difference is that glue dots 4 are provided on the surface of the front passivation anti-reflection film 6, and the glue dots 4 are formed from the above-mentioned adhesive.

[0117] In some specific embodiments, the preset value is 5000-8000 mPa*s.

[0118] In some specific embodiments, adjusting the viscosity of the adhesive to a predetermined value is performed using toluene.

[0119] It should be noted that the viscosity described in the present invention refers to the viscosity at 25° C. The measurement method is to use a rotational viscometer equipped with a constant temperature cell at a measurement temperature of 25° C.

[0120] In a sixth aspect, the present invention provides a photovoltaic module, which includes the aforementioned hot spot prevention battery or the hot spot prevention battery produced by the aforementioned production method.

[0121] It is understood that the photovoltaic module of the present invention can be prepared according to conventional methods known in the art.

[0122] Specifically, the preparation method can be: stacking photovoltaic glass, front transparent adhesive film, anti-hot spot cell, back adhesive film and back glass in sequence, and then laminating according to conventional lamination parameters, and after lamination, continuing to install the frame and junction box according to the production process of photovoltaic modules; after the potting glue and sealant are completely cured, wipe and clean the glass surface to obtain a photovoltaic module.

[0123] The following describes in detail the thermoluminescent material and preparation method, adhesive, hot spot prevention cell and photovoltaic module of the present application through several specific embodiments.

[0124] In the following examples, the Mn used 2+ Doped CsCdCl3 perovskite materials and Zr 4+ The doped CsCdCl3 perovskite material is prepared according to the following existing method:

[0125] Mn 2+ Preparation of doped CsCdCl3 perovskite material: Weigh 680.24mg CsCl (4mmol) and dissolve it in glass bottle A containing 5mL concentrated hydrochloric acid, weigh 748.24mg CdCl2 (4mmol) and 50.84mg MnCl2 (0.4mmol) and dissolve them together in glass bottle B containing 5mL concentrated hydrochloric acid, then place bottles A and B on a magnetic stirring table and stir at room temperature. After the reactants are dissolved, pour the CsCl solution in bottle A into bottle B and continue stirring for 30s to obtain a white turbid liquid. The obtained product is centrifuged and the precipitate is collected. After washing three times with anhydrous ethanol, it is placed in a drying oven at 60°C and dried for 10h to obtain a white powder sample, which is the Mn doping concentration of 10%. 2+ Doped CsCdCl3 perovskite material (CsCdCl3: 10% Mn 2+ ). Then crush it into corresponding particle size for use as needed.

[0126] Zr 4+Preparation of doped CsCdCl3 perovskite material: Weigh the raw materials of cesium chloride, cadmium chloride and zirconium chloride according to the stoichiometric ratio of 1:0.95:0.05, add the weighed drugs to the prepared polytetrafluoroethylene liner respectively, and then add a certain amount of hydrochloric acid solution, stir thoroughly to obtain a uniformly mixed emulsion. Place the liner containing the emulsion into the reactor, seal it, place it in the oven and heat it to 100°C, react for 12 hours, and cool to room temperature. Centrifuge the prepared white solution at a speed of 9000r / min for 3 minutes, collect the precipitate, and then disperse it in 5mL of isopropanol solution. Centrifuge it at a speed of 8000r / min for 2mi, continue to collect the precipitate, and remove the residual hydrochloric acid. Finally, place the collected precipitate in a vacuum drying oven and vacuum dry it at 60°C to finally obtain white microcrystals, which are Zr doping concentrations of 5%. 4+ Doped CsCdCl3 perovskite material (CsCdCl3: 5% Zr 4+ ). Then crush it into corresponding particle size for use as needed.

[0127] Example 1

[0128] [Thermoluminescent materials]

[0129] This embodiment provides a thermoluminescent material. The thermoluminescent material is in the form of a microcapsule, with a doped all-inorganic perovskite material as the capsule core and PDMS as the capsule wall. The doped all-inorganic perovskite material is Mn with a particle size of 10 nm. 2+ Doped CsCdCl3 perovskite materials.

[0130] The preparation method of the thermoluminescent material of this embodiment comprises the following steps:

[0131] Step 1: Mix polydimethylsiloxane (PDMS) and toluene in a mass ratio of 1:3 and stir evenly to obtain PDMS solution A;

[0132] Step 2: Weigh Mn with a particle size of 10 nm 2+ Doped CsCdCl3 perovskite material was dispersed in toluene solution, Mn 2+ The mass ratio of the doped perovskite material to toluene is 1:10, obtaining perovskite solution B;

[0133] Step 3: Under stirring conditions, slowly add the perovskite solution B to the PDMS solution A to form an emulsion, ensuring that the Mn 2+ The concentration of doped perovskite material is 10%;

[0134] Step 4: Add 0.5% by mass of curing agent 1 (hydrogen-containing silicone oil curing agent with a hydrogen content of 1.0) to the emulsion of step 3 to cure the PDMS to form the capsule wall of the microcapsule, and then wash the microcapsules with a non-polar solvent n-hexane to remove unreacted substances and impurities on the surface of the PDMS microcapsules;

[0135] Step 5: Drying the microcapsules in step 4 to obtain the final product, microcapsule-type thermoluminescent material.

[0136] [adhesive]

[0137] Furthermore, this embodiment also provides an adhesive, which includes the following components:

[0138] The adhesive is prepared by weighing the components according to the weight and mixing them evenly.

[0139] [Hot spot protection battery]

[0140] Furthermore, this embodiment also provides a hot spot prevention battery, such as Figure 1 As shown, it includes an N-type silicon substrate 8, an N+ front surface field 7, a tunneling oxide layer 9, a front passivation anti-reflection film 6, a back passivation anti-reflection film 10, a P-type emitter 11, and an N-type emitter 12. The upper and lower surfaces of the N-type silicon substrate 8 are the front and back surfaces respectively. The N+ front surface field 7 and the front passivation anti-reflection film 6 are distributed on the front surface of the N-type silicon substrate 8; the tunneling oxide layer 9, the back passivation anti-reflection film 10, the P-type emitter 11, and the N-type emitter 12 are all distributed on the back surface of the N-type silicon substrate 8, wherein the surface of the front passivation anti-reflection film 6 is provided with semicircular glue dots 4, and the semicircular glue dots 4 are formed by the above-mentioned adhesive.

[0141] The method for preparing the above-mentioned hot spot-proof battery comprises the following steps:

[0142] S1. Use ethanol to thoroughly clean the front surface of the N-type silicon substrate 8 in the back contact solar cell to remove grease, moisture, dust and other contaminants on the surface;

[0143] S2. Using toluene, the viscosity of the adhesive is adjusted to 6000 mPa*s;

[0144] S3, using a dispensing machine to dispense glue on the surface of the front passivation anti-reflection film 6 on the front of the back contact battery, such as Figure 3 As shown, when there is no leakage channel 5 inside the back contact battery, semicircular glue dots 4 are evenly placed between the P-type and N-type main grids, and the radius of the semicircular glue dots 4 is controlled to be 2 mm. At this time, the height of the glue dots 4 is 1 mm; a hot spot-proof battery is obtained.

[0145] Taking a back-contact battery with 20 main grids as an example, the area of ​​the entire battery cell is 182mm*184mm, and the number of semicircular glue points 4 is 20*20.

[0146] [Photovoltaic panels]

[0147] Furthermore, this embodiment provides a photovoltaic module. The photovoltaic module includes the aforementioned anti-hot spot cell. Its preparation method comprises sequentially stacking photovoltaic glass, a front transparent adhesive film, an anti-hot spot cell, a back adhesive film, and back glass, laminating according to conventional lamination parameters, and then continuing with the photovoltaic module production process to frame and install a junction box. After the potting compound and sealant have completely cured, the glass surface is wiped clean to obtain the photovoltaic module.

[0148] Example 2

[0149] The preparation method of the microcapsule-type thermoluminescent material is as described in Example 1. The component of Example 2 is an N-type back-contact battery component designed with a leakage channel 5, and the number X of the leakage channels 5 is less than 100. Therefore, the semicircular glue dots 4 avoid the leakage channels 5 during dispensing, and are evenly dispensed near the non-leakage channels 5. The number X of the leakage channels 5 plus the number Y of the dispensed glue dots 4 should be within the range of 300 to 400. The size of the semicircular glue dots 4 is the same as that in Example 1. When dispensing, ensure that the semicircular glue dots 4 are evenly distributed at the non-leakage channels 5 on the front of the battery cell.

[0150] In this embodiment, the number X of the leakage channels 5 is 80, and the number Y of the glue dots 4 is 320. Figure 4 shown.

[0151] The cells and components were packaged in the same manner as in Example 1 to obtain a photovoltaic component.

[0152] Example 3

[0153] Mn in the preparation of microcapsule thermoluminescent materials 2+ The particle size of the doped CsCdCl3 perovskite material is 60 nm, and the rest is the same as in Example 1; the cells and components are encapsulated in the same manner as in Example 1 to obtain a photovoltaic component.

[0154] Example 4

[0155] The preparation method of the microcapsule-type thermoluminescent material is as shown in Example 1. The battery is an N-type back-contact battery designed with leakage channels 5, and the number X of leakage channels 5 is less than 100. In this embodiment, the number X of leakage channels 5 is 80, but the number Y of semicircular glue dots 4 is greater than 300. In this embodiment, the number Y of semicircular glue dots 4 is 400. Together with the number X of leakage channels 5, the total number is greater than 400. When dispensing the semicircular glue dots 4, avoid dispensing at the leakage channels 5 and dispense the glue evenly.

[0156] The cells and components were packaged in the same manner as in Example 1 to obtain a photovoltaic component.

[0157] Example 5

[0158] Mn in the preparation of microcapsule thermoluminescent materials 2+ The particle size of the doped CsCdCl3 perovskite material is 5 nm, and the rest is the same as in Example 1; the cells and components are encapsulated in the same manner as in Example 1 to obtain a photovoltaic component.

[0159] Example 6

[0160] Mn in the preparation of microcapsule thermoluminescent materials 2+ The particle size of the doped CsCdCl3 perovskite material is 50 nm, and the rest is the same as in Example 1; the cells and components are encapsulated in the same manner as in Example 1 to obtain a photovoltaic component.

[0161] Example 7

[0162] Mn in the preparation of microcapsule thermoluminescent materials 2+ The particle size of the doped CsCdCl3 perovskite material is 3 nm, and the rest is the same as in Example 1; the cells and components are encapsulated in the same manner as in Example 1 to obtain a photovoltaic component.

[0163] Example 8

[0164] Using Zr 4+ Doped CsCdCl3 perovskite materials replace Mn 2+ The preparation method and addition amount of the doped CsCdCl3 perovskite material are the same as those in Example 1; the number and position of the semicircular glue dots are the same as those in Example 1; and a photovoltaic module is obtained after packaging.

[0165] Example 9

[0166] This embodiment provides a thermoluminescent material, which is the same as that of embodiment 1, except that:

[0167] During the preparation of the thermoluminescent material, the solvent used in step 1 is toluene replaced by tetrahydrofuran, and the mass ratio of polydimethylsiloxane (PDMS) to tetrahydrofuran is 1:10; the solution used in step 2 is toluene replaced by tetrahydrofuran, and the mass ratio of perovskite material to tetrahydrofuran is 1:3; in step 3, the concentration of perovskite material in the emulsion is 5%; in step 4, the curing agent 1 is polyetheramine (model GE-7124B, purchased from Huibai New Materials Technology (Shanghai) Co., Ltd.), and its mass fraction is 0.1%.

[0168] This embodiment further provides an adhesive, which is the same as that of Example 1, except that the components of the adhesive are as follows:

[0169] This embodiment also provides a hot spot prevention battery and photovoltaic module, and the preparation method is the same as that of Example 1. The difference from Example 1 is that step S2 of the preparation method of the hot spot prevention battery is: using toluene to adjust the viscosity of the adhesive to 5000mPa*s.

[0170] Example 10

[0171] This embodiment provides a thermoluminescent material, which is the same as that of embodiment 1, except that:

[0172] During the preparation of the thermoluminescent material, the solvent used in step 1 is acetone instead of toluene, and the mass ratio of polydimethylsiloxane (PDMS) to acetone is 1:5; the solution used in step 2 is acetone instead of toluene, and the mass ratio of perovskite material to acetone is 1:6; in step 3, the concentration of perovskite material in the emulsion is 8%; in step 4, the curing agent 1 is ethylenediamine, and its mass fraction is 0.3%.

[0173] This embodiment further provides an adhesive, which is the same as that of Example 1, except that the components of the adhesive are as follows:

[0174] This embodiment also provides a hot spot prevention battery and photovoltaic module, and the preparation method is the same as that of Example 1. The difference from Example 1 is that step S2 of the preparation method of the hot spot prevention battery is: using toluene to adjust the viscosity of the adhesive to 5000mPa*s.

[0175] Comparative Example 1

[0176] The difference from Example 1 is that the microcapsule-type thermoluminescent material is not used in the adhesive components, and the other components are the same as those in Example 1. After packaging, a photovoltaic module is obtained.

[0177] Test Example 1

[0178] 1. Initial power test

[0179] The photovoltaic modules of some examples (Examples 1-8) and comparative example 1 were subjected to IV tests, and the initial power P0 of the modules was recorded. The results are shown in Table 1.

[0180] 2. Module outdoor shading test

[0181] Here’s how:

[0182] Place the photovoltaic module with the front side facing upwards in a steady-state box and control the light intensity of the steady-state box to 1250W / m 2 After the photovoltaic module has been stably irradiated for half an hour, an infrared imager is used to find the four hottest cells and mark them; then different shielding ratios are used to block them to confirm the hottest shielding ratio of a single cell; then an outdoor shielding exposure experiment is conducted based on the hottest shielding ratio of the four cells, and an infrared imager is used to test the hot spot temperature of the blocked cells when the sunlight is relatively strong during the day.

[0183] Among them, for the back-contact module with no leakage channel design, the hottest shading ratio of a single cell is 20%. The hot spot temperature of the cell after shading 4 cells is recorded. The hot spot temperature values ​​are shown in Table 2. According to the above shading method, the outdoor exposure cumulatively reaches 60KWh / m 2 After that, record its power value as P1; and according to the formula Calculate the power change rate and see the results in Table 1.

[0184] For back-contact modules with leakage channel design, the hottest shading ratio of a single cell is 100%. The hot spot temperature of the cell after shading four cells is recorded. The hot spot temperature values ​​are shown in Table 2. According to the above shading method, the outdoor exposure cumulatively reaches 60KWh / m 2 After that, record its power value as P1; and according to the formula Calculate the power change rate and see the results in Table 1.

[0185] Table 1. Power test results are summarized as follows name <![CDATA[Initial power P0]]> <![CDATA[Cumulative power P1 after cumulative exposure to sunlight]]> Power change rate ΔP Example 1 465.3W 467.1W 0.39％ Example 2 460.2W 461.3W 0.24％ Example 3 466.4W 464.8W -0.34％ Example 4 458.7W 460.1W 0.31％ Example 5 466.8W 469.4W 0.56％ Example 6 465.7W 468.9W 0.69％ Example 7 466.4W 460.1W -1.35％ Example 8 465.9W 466.1W 0.04％ Comparative Example 1 464.9W 459.7W -1.12％

[0186] Table 2. Hot spot temperature test results are summarized as follows name Position 1 Position 2 Position 3 Position 4 Example 1 82.3℃ 92.2℃ 72.7℃ 77.1℃ Example 2 79.3℃ 76.3℃ 78.8℃ 77.6℃ Example 3 107.3℃ 110.2℃ 113.2℃ 111.5℃ Example 4 80.3℃ 81.5℃ 79.8℃ 78.5℃ Example 5 88.7℃ 85.1℃ 84.3℃ 89.6℃ Example 6 75.4℃ 73.2℃ 70.9℃ 80.5℃ Example 7 139.7℃ 122.3℃ 130.7℃ 138.9℃ Example 8 131.87℃ 125.5℃ 126.9℃ 129.7℃ Comparative Example 1 144.3℃ 148℃ 145.8℃ 148.9℃

[0187] Tables 1 and 2 show that modules with back-contact cells designed with leakage paths have lower initial power than modules without leakage paths. This is primarily because leakage current means that some current bypasses the normal power generation and output circuits and instead flows through unintended paths, such as through grounded components like the module frame and brackets. This leakage current cannot participate in the effective conversion and output of electrical energy, resulting in direct energy loss and lowering the final output power. Furthermore, leakage current can lead to uneven charge distribution within the cell, generating an additional electric field and increasing polarization within the cell. This polarization effect can affect cell performance, reducing parameters such as open-circuit voltage and short-circuit current, and thus affecting the output power of the PV module.

[0188] Furthermore, the hot spot temperature of modules with leakage channel designs is lower than that of modules without leakage channel designs. This is mainly because the leakage channel design reduces the current density in the hot spot area, thereby generating less heat. At the same time, leakage may affect the electric field and charge distribution within the module, which to some extent changes the heat conduction path and heat transfer method within the module. Moreover, some of the heat generated by leakage is conducted away through the leakage channel, increasing the heat dissipation path.

[0189] From the comparison data of Example 2 and Example 4, the changes in hot spot temperature and power of both are not obvious. This is mainly because both are photovoltaic modules with leakage channel design. The hot spot temperature and power are more correlated with the leakage channel design, but the leakage channel design will significantly reduce the power of the module, so it is necessary to balance the relationship between hot spot prevention and module power.

[0190] The data from Comparative Example 1 and Example 1 show that the hot spot temperature of the component in Comparative Example 1 is close to 149°C. When the outdoor light intensity is strong in summer, there is a risk of fire caused by the hot spot temperature being too high. At the same time, the outdoor power attenuation of the component in Comparative Example 1 is 1.12%, which exceeds the conventional first attenuation requirement of N-type components of less than 1%. This indicates that when the thermoluminescent material is not designed with a capsule-type thermoluminescent material, it cannot achieve thermoluminescence; at this time, the glue point cannot play a role in preventing hot spots.

[0191] From the data of Example 8 and Example 1, it can be seen that the power of Example 8 does not change much after being shielded from outdoor sunlight, but its hot spot temperature is increased by nearly 60°C compared with Example 1. Under the high temperature and high intensity ultraviolet radiation in summer, it is also prone to component hot spot safety risks. 4+ Doped CsCdCl3 perovskite materials may be due to Mn 2+There are Cl vacancies with inequivalent values ​​in the doped CsCdCl3 structure, which can generate trap states with a wide energy distribution. These trap states can store charge carriers and slowly release them to the emission center, thereby generating afterglow emission with an anti-thermal quenching effect. In other words, at higher temperatures, the trap states in this material can maintain the luminescence performance of the material to a certain extent, reflecting good high temperature resistance; while Zr 4+ The distribution of trap states and adaptability to high temperature of CsCdCl3 perovskite materials doped with Mn 2+ The doping situation is different, and the performance of high temperature resistance is relatively not as good as Mn 2+ The doping is so prominent.

[0192] Combining Examples 1, 3, 5, 6 and 7, it can be seen that when Mn 2+ When the particle size of the doped CsCdCl3 material is too large (>50nm), the power does not change much from Examples 1 and 3, but the maximum difference in hot spot temperature between the two is about 40°C. This is mainly because the particle size of the thermoluminescent material in Example 3 is relatively larger, which may lead to increased unevenness or defects in its internal structure, resulting in the energy transfer process being hindered, so that the luminous intensity no longer continues to increase. However, after the heat transfer is blocked, its thermoluminescent efficiency decreases, causing the hot spot temperature to rise instead of fall.

[0193] When Mn 2+ When the particle size of the doped CsCdCl3 material is too small (<5nm), as shown by a comparison between Example 7 and Example 5, the initial power is not significantly affected. However, after the hot spot forms, the power of Example 7 decays by 1.35%, and the hot spot temperature is primarily above 130°C. This will lead to current mismatch within the component and thus significant power decay. This is primarily because when the material particle size is too small, the specific surface area of ​​the material is large, the surface energy is high, and it is more likely to form more surface defects or produce more dangling bonds, causing heat to be dissipated in the form of heat rather than light. In this case, the dissipated heat does work on the component, causing the internal temperature of the component to rise and the power decay to increase.

[0194] Thus far, the technical solutions of the present invention have been described in conjunction with the preferred embodiments shown in the accompanying drawings. However, it will be readily understood by those skilled in the art that the scope of protection of the present invention is obviously not limited to these specific embodiments. Without departing from the principles of the present invention, those skilled in the art may make equivalent changes or substitutions to the relevant technical features, and the technical solutions after such changes or substitutions will fall within the scope of protection of the present invention.

Claims

1. A thermoluminescent material, characterized in that: The thermoluminescent material is a microcapsule type, with a doped all-inorganic perovskite material as the capsule core and PDMS as the capsule wall.

2. The thermoluminescent material according to claim 1, characterized in that The doped all-inorganic perovskite material is Zr 4 + Doped CsCdCl3 perovskite materials, Mn 2+ One or more of a doped CsCdCl3 perovskite material and a Ge-doped CsPbI3 perovskite material; Preferably, the doped all-inorganic perovskite material is Mn 2+ Doped CsCdCl3 perovskite materials.

3. The thermoluminescent material according to claim 1 or 2, characterized in that The particle size of the doped all-inorganic perovskite material is 3 to 60 nm, preferably 5 to 50 nm.

4. A method for preparing the thermoluminescent material according to any one of claims 1 to 3, characterized in that: The preparation method comprises the following steps: Providing a PDMS solution A formed by PDMS and a solvent; Providing a perovskite solution B formed by a doped all-inorganic perovskite material and a solvent; providing an emulsion formed of a perovskite solution B and a PDMS solution A; Add curing agent 1 to the emulsion to solidify the PDMS to form the capsule wall of the microcapsule, and then wash and dry to obtain the microcapsule.

5. The method for preparing a thermoluminescent material according to claim 4, wherein: The mass ratio of the PDMS to the solvent is 1:(3-10); and / or, the mass ratio of the doped all-inorganic perovskite material to the solvent is 1:(3-10); and / or, the concentration of the all-inorganic perovskite material in the emulsion is 5 to 10%; And / or, the amount of curing agent 1 added to the emulsion is 0.1 to 0.5 wt%.

6. An adhesive, characterized in that: The adhesive comprises the thermoluminescent material according to any one of claims 1 to 3 or the thermoluminescent material prepared by the preparation method of the thermoluminescent material according to claim 4 or 5.

7. The adhesive according to claim 6, characterized in that The adhesive comprises the following components in parts by weight:

8. A hot spot protection battery comprising: N-type silicon substrate (8); An N+ front surface field (7) and a front passivation anti-reflection film (6) are provided on the front surface of an N-type silicon substrate (8); A tunneling oxide layer (9), a back passivation anti-reflection film (10), a P-type emitter (11) and an N-type emitter (12) are arranged on the back side of an N-type silicon substrate (8); It is characterized in that The surface of the front passivation anti-reflection film (6) is provided with glue dots (4), and the glue dots (4) are formed by the adhesive according to claim 6 or 7.

9. The hot spot prevention battery according to claim 8, characterized in that: The glue dots (4) are evenly distributed on the surface of the front passivation anti-reflection film (6) and are located between the P-type and N-type main grids.

10. The hot spot prevention battery according to claim 9, characterized in that: A leakage channel (5) is provided at the fine gate of the P-type emitter (11) and / or the N-type emitter (12).

11. The hot spot prevention battery according to claim 10, characterized in that: The glue dots (4) are evenly distributed on the surface of the front passivation anti-reflection film (6) and at locations other than the leakage channels (5).

12. The hot spot prevention battery according to claim 11, characterized in that: The number X of the leakage channels (5) satisfies 0<X≤100.

13. The hot spot prevention battery according to claim 12, characterized in that: The number Y of the glue dots (4) is 1 to 5 times the number X of the leakage channels (5).

14. The hot spot prevention battery according to any one of claims 8 to 13, characterized in that: The shape of the glue dot (4) is semicircular or triangular, preferably semicircular, and more preferably the diameter of the semicircular glue dot (4) is 1 mm to 5 mm.

15. A method for preparing a hot spot-proof battery according to any one of claims 8 to 14, characterized in that: The preparation method comprises: Cleaning the front side of the N-type silicon substrate (8) of the back contact cell; Adjusting the viscosity of the adhesive to a preset value; The adhesive with the viscosity adjusted to a preset value is dispensed onto the surface of the front passivation anti-reflection film (6) on the front side of the N-type silicon substrate (8) to form a glue dot (4).

16. The method for preparing a hot spot-proof battery according to claim 15, characterized in that: The preset value is 5000-8000 mPa*s.

17. A photovoltaic module, characterized in that: The photovoltaic module includes the anti-hot spot battery according to any one of claims 8 to 14 or the anti-hot spot battery prepared by the preparation method of the anti-hot spot battery according to any one of claims 15 or 16.

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