High-strength composite insulating material for cabinet type mutual inductor and cabinet type mutual inductor

Abstract

The invention discloses a high-strength composite insulating material for a cabinet type mutual inductor, which comprises a CuAlZraGdb layer deposited on an epoxy resin layer, and a is equal to 0.05-0.1, and b is equal to 0.03-0.06; the CuAlFecLad layer is deposited on the CuAlZraGdb layer, c is equal to 0.1 to 0.15, and d is equal to 0.02 to 0.04; the CuAlNieCef layer is deposited on the CuAlFecLad layer, e is equal to 0.05 to 0.1, and f is equal to 0.04 to 0.08; the CuAlCogLah layer is deposited on the CuAlNieLaf layer, the g is equal to 0.1 to 0.15, and the h is equal to 0.02 to 0.04; and the polyether-ether-ketone layer is coated on the CuAlCogLah layer. The bonding force between the epoxy resin and the polyether-ether-ketone is improved, so that the strength of the epoxy resin is improved.

Description

Technical Field

[0001] The invention relates to the technical field of layered materials, in particular to a high-strength composite insulating material for a cabinet-type mutual inductor and the cabinet-type mutual inductor. Background Art

[0002] Epoxy resin is a commonly used insulating material in cabinet-type transformers. Epoxy resin has excellent chemical resistance (acid, alkali, and solvent resistance), excellent mechanical strength and dimensional stability, as well as good electrical insulation properties and low cure shrinkage. Currently, one way to improve the mechanical properties of epoxy resin is to coat it with a higher-strength polymer, using the higher-strength polymer as the primary load-bearing unit, thereby indirectly improving the mechanical properties of the entire component. Polyetheretherketone is an important high-strength thermoplastic polymer, but studies have found that the interfacial bonding strength between epoxy resin and polyetheretherketone is low. For example, in tensile tests, delamination often occurs between the epoxy resin and polyetheretherketone before the polyetheretherketone breaks, which seriously affects the improvement of the mechanical properties of the epoxy resin by polyetheretherketone. Summary of the Invention

[0003] In order to solve the problems of the prior art, the present invention proposes a high-strength composite insulating material for cabinet-type mutual inductors. The insulating material proposed in the present invention includes multiple metal layers with specific doping elements. The present invention improves the bonding force between epoxy resin and polyetheretherketone by designing the transition metal elements and rare earth elements included in each film layer and the ratio of transition metal elements and rare earth elements in each film layer, thereby improving the strength of the epoxy resin.

[0004] The present invention provides a high-strength composite insulating material for a cabinet-type mutual inductor, comprising:

[0005] CuAlZr deposited on epoxy layer a Gd b layer, where a=0.05-0.1, b=0.03-0.06;

[0006] In CuAlZr a Gd b CuAlFe deposited on the layer c La d layer, where c = 0.1-0.15, d = 0.02-0.04;

[0007] In CuAlFe c La d CuAlNi deposited on the layer e Ce f layer, where e=0.05-0.1, f=0.04-0.08;

[0008] In CuAlNi e La f CuAlCo ​​deposited on the layer g La h layer, where g = 0.1-0.15, h = 0.02-0.04; and

[0009] In CuAlCo g La h A polyetheretherketone layer is coated on the layer.

[0010] In one embodiment, CuAlZr a Gd b The thickness of the layer is 30-40nm, CuAlFe c La d The thickness of the layer is 30-40nm, CuAlNi e Ce f The thickness of the layer is 30-40nm, CuAlCo g La h The thickness of the layer is 30-40 nm.

[0011] In one embodiment, CuAlZr is deposited a Gd b The specific process of the layer is: magnetron sputtering deposition of CuAlZr a Gd b layer, wherein the sputtering target is CuAlZr a Gd b Target material, wherein the power type is RF power supply, the sputtering power is 40-50W, the sputtering voltage is 30-40V, the argon flow rate is 20-30sccm, and the sputtering temperature is 80-100℃.

[0012] In one embodiment, CuAlFe is deposited c La d The specific process of the layer is: magnetron sputtering deposition of CuAlFe c La d layer, wherein the sputtering target is CuAlFe c La d Target material, wherein the power type is RF power supply, the sputtering power is 60-70W, the sputtering voltage is 30-40V, the argon flow rate is 20-30sccm, and the sputtering temperature is 80-100℃.

[0013] In one embodiment, CuAlNi is deposited e Ce f The specific process of the layer is: magnetron sputtering deposition of CuAlNi e Ce flayer, wherein the sputtering target is CuAlNi e Ce f Target material, wherein the power type is RF power supply, the sputtering power is 40-50W, the sputtering voltage is 30-40V, the argon flow rate is 20-30sccm, and the sputtering temperature is 80-100℃.

[0014] In one embodiment, CuAlCo ​​is deposited g La h The specific process of the layer is: magnetron sputtering deposition of CuAlCo g La h layer, wherein the sputtering target is CuAlCo g La h Target material, wherein the power type is RF power supply, the sputtering power is 60-70W, the sputtering voltage is 50-70V, the argon flow rate is 20-30sccm, and the sputtering temperature is 80-100℃.

[0015] The present invention provides a cabinet-type mutual inductor, comprising:

[0016] High-strength composite insulation materials used for cabinet-type transformers. High-strength composite insulation materials include:

[0017] CuAlZr deposited on epoxy layer a Gd b layer, where a=0.05-0.1, b=0.03-0.06;

[0018] In CuAlZr a Gd b CuAlFe deposited on the layer c La d layer, where c = 0.1-0.15, d = 0.02-0.04;

[0019] In CuAlFe c La d CuAlNi deposited on the layer e Ce f layer, where e=0.05-0.1, f=0.04-0.08;

[0020] In CuAlNi e La f CuAlCo ​​deposited on the layer g La h layer, where g = 0.1-0.15, h = 0.02-0.04; and

[0021] In CuAlCo g La h A polyetheretherketone layer is coated on the layer.

[0022] In one embodiment, CuAlZr a Gd b The thickness of the layer is 30-40nm, CuAlFe c La d The thickness of the layer is 30-40nm, CuAlNi e Ce f The thickness of the layer is 30-40nm, CuAlCo g La h The thickness of the layer is 30-40 nm.

[0023] In one embodiment, CuAlZr is deposited a Gd b The specific process of the layer is: magnetron sputtering deposition of CuAlZr a Gd b layer, wherein the sputtering target is CuAlZr a Gd b Target material, wherein the power type is RF power supply, the sputtering power is 40-50W, the sputtering voltage is 30-40V, the argon flow rate is 20-30sccm, and the sputtering temperature is 80-100℃.

[0024] In one embodiment, CuAlFe is deposited c La d The specific process of the layer is: magnetron sputtering deposition of CuAlFe c La d layer, wherein the sputtering target is CuAlFe c La d Target material, wherein the power type is RF power supply, the sputtering power is 60-70W, the sputtering voltage is 30-40V, the argon flow rate is 20-30sccm, and the sputtering temperature is 80-100℃.

[0025] Compared with the prior art, the present invention has the following advantages: the insulating material proposed in the present invention includes multiple metal layers with specific doping elements. The present invention improves the bonding force between the epoxy resin and polyetheretherketone by designing the transition metal elements and rare earth elements included in each film layer and the ratio of the transition metal elements and rare earth elements in each film layer, thereby improving the strength of the epoxy resin. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 Schematic diagram of the membrane structure of an embodiment of the present invention.

[0027] Figure 2 This is a TEM photograph of one embodiment of the present invention.

[0028] Figure 3 This is a HRTEM photograph of one embodiment of the present invention. DETAILED DESCRIPTION

[0029] The specific embodiments of the present invention are described in detail below with reference to the accompanying drawings, but it should be understood that the protection scope of the present invention is not limited by the specific embodiments.

[0030] Figure 1 This is a schematic diagram of the film structure of an embodiment of the present invention. As shown in the figure, the high-strength composite insulation material for cabinet-type mutual inductors of the present invention comprises an epoxy resin layer, a CuAlZr a Gd b layer, CuAlFe c La d layer, CuAlNi e Ce f layer, CuAlCo g La h To ensure comparability of the results, unless otherwise indicated, the epoxy resin of the present invention adopts the epoxy resin of Example 6 in the prior art CN105255424B in which the A and B components are in a ratio of 1:1.

[0031] Example 1

[0032] A high-strength composite insulating material for cabinet-type mutual inductors, comprising: CuAlZr deposited on an epoxy resin layer a Gd b layer, where a=0.05, b=0.03; in CuAlZr a Gd b CuAlFe deposited on the layer c La d layer, where c = 0.1, d = 0.02; in CuAlFe c La d CuAlNi deposited on the layer e Ce f layer, where e=0.05, f=0.04; in CuAlNi e La f CuAlCo ​​deposited on the layer g La h layer, where g = 0.1, h = 0.02; and in CuAlCo g La h A polyetheretherketone layer coated on the layer. It can be understood by those skilled in the art that, in the present invention, for example, CuAlZr a Gd b The layer indicates that the target material for depositing this layer is CuAlZr a Gdb target, but does not mean that the actual composition of the layer is CuAlZr a Gd b (It is understood that the composition of any film produced by magnetron sputtering will deviate slightly from that of the target material.) g La h The method of coating the polyetheretherketone layer on the CuAlCo ​​layer can be to uniformly coat the melted polyetheretherketone resin on the CuAlCo ​​layer. g La h The polyetheretherketone resin is then cooled and solidified to form a polyetheretherketone layer. It is understood that the polyetheretherketone layer needs to completely cover the metal film layer. Since polyetheretherketone is an insulating material, even if the composite material of the present invention has a metal layer, the polyetheretherketone layer completely covers the metal film layer, so the composite material of the present invention can still maintain insulation properties.

[0033] CuAlZr a Gd b The thickness of the layer is 30nm, CuAlFe c La d The thickness of the layer is 30nm, CuAlNi e Ce f The thickness of the layer is 30nm, CuAlCo g La h The thickness of the layer is 30 nm.

[0034] CuAlZr deposition a Gd b The specific process of the layer is: magnetron sputtering deposition of CuAlZr a Gd b layer, wherein the sputtering target is CuAlZr a Gd b Target material, wherein the power supply type is RF power supply, the sputtering power is 40W, the sputtering voltage is 30V, the argon flow rate is 20sccm, and the sputtering temperature is 80℃. CuAlZr a Gd b The target material can be prepared by a vacuum melting method known in the art. The general steps are: first, weigh the metal elements according to the proportions to prepare the material; then, place the metal raw materials into a vacuum melting machine; finally, vacuum the metal ingot; and finally, machine the metal ingot to obtain the metal target material. The targets used in the present invention were purchased from Tianjin Hengyi New Materials Co., Ltd.

[0035] CuAlFe deposition c La d The specific process of the layer is: magnetron sputtering deposition of CuAlFe c La dlayer, wherein the sputtering target is CuAlFe c La d Target material, wherein the power type is RF power supply, the sputtering power is 60W, the sputtering voltage is 30V, the argon flow rate is 20sccm, and the sputtering temperature is 80℃.

[0036] CuAlNi deposition e Ce f The specific process of the layer is: magnetron sputtering deposition of CuAlNi e Ce f layer, wherein the sputtering target is CuAlNi e Ce f Target material, wherein the power type is RF power supply, the sputtering power is 40W, the sputtering voltage is 30V, the argon flow rate is 20sccm, and the sputtering temperature is 80℃.

[0037] CuAlCo ​​deposition g La h The specific process of the layer is: magnetron sputtering deposition of CuAlCo g La h layer, wherein the sputtering target is CuAlCo g La h Target material, wherein the power type is RF power supply, the sputtering power is 60W, the sputtering voltage is 50V, the argon flow rate is 20sccm, and the sputtering temperature is 80℃.

[0038] CuAlCo ​​of Example 1 g La h TEM images of the layers can be found in Figure 2 CuAlCo ​​of Example 1 g La h HRTEM images of the layers can be found in Figure 3 .

[0039] The sample obtained in Example 1 was machined to obtain a tensile strength sample that meets the ISO 527-2:2025 test standard. A total of 5 samples were prepared. The tensile strength test was carried out in accordance with the ISO 527-2:2025 test standard. The average tensile strength of the 5 samples was 105 MPa, and no delamination occurred after the 5 samples were broken. The mechanism for the formation of this experimental result may be as follows: for CuAlZr a Gd b layer (epoxy resin interface layer), the unfilled d orbitals of Zr (4d²) interact with the lone pair electrons of oxygen atoms in epoxy resin (2p 4 ) forms dp orbital hybridization, enhancing charge transfer; at the same time, Gd(4f 7The f orbitals of the 5d¹) act as electron traps to capture free electrons at the interface, reducing the interface barrier and increasing the binding energy. The addition of Gd reduces the surface energy of the metal layer from 1.8 J / m² for pure Cu to 1.25 J / m², approaching the 0.045 J / m² of epoxy resin, significantly improving wettability. Gd forms a Gd-OC coordination bond with the hydroxyl groups (-OH) of the epoxy resin (bond energy ≈318 kJ / mol), far exceeding the van der Waals force (<50 kJ / mol). c La d layer, Fe (CTE = 12.0 × 10⁻ 6 / K) and La (CTE = 12.1 × 10⁻ 6 The addition of K) makes the CTE of this layer controlled at 12.5×10⁻ 6 / K, precisely between the lower layer (CuAlZrGd: 14.2×10⁻ 6 / K) and upper layer (CuAlNiCe: 10.8×10⁻ 6 / K), the stress under 200℃ thermal cycling is reduced by 70%. The bcc structure of Fe (lattice constant 2.87Å) forms a Kurdjumov-Sachs orientation relationship with the adjacent fcc layer, which improves the interlayer bonding strength. The 3d electrons of Fe and the 5d electrons of La form a hybrid state density peak near the Fermi level, enhancing interlayer electron sharing. e Ce f Layer Ni (3d 8 ) as Lewis acid active sites, attacking the oxygen atom of the carbonyl group (C=O) of PEEK, while Ce³⁺ / Ce 4 ⁺ The variable valence state provides an electron transfer channel, catalyzing the formation of CO-Ni (bond energy ≈ 280 kJ / mol) and Ce-OC (bond energy ≈ 340 kJ / mol) covalent bonds. The Ni fcc lattice (a = 3.52Å) and the PEEK benzene ring plane spacing (5.0 ± 0.2Å) form a 2:3 superlattice relationship (mismatch 4.8%), with an interface energy as low as 0.8 J / m². g La h layer (PEEK contact layer), 3d Co 7 Electrons form d-pπ conjugated bonds (bond energy ≈210 kJ / mol) with the sp³ hybrid orbitals of the PEEK ether bond (-O-), which are five times stronger than hydrogen bonds. La promotes the preferential growth of the (111) plane (interplanar spacing 2.08 Å), which couples with the (010) plane of PEEK (interplanar spacing 2.02 Å) through a Moiré superlattice, resulting in a misfit strain of <1.5%.

[0040] Example 2

[0041] A high-strength composite insulating material for cabinet-type mutual inductors, comprising: CuAlZr deposited on an epoxy resin layer a Gd b layer, where a=0.1, b=0.06; in CuAlZr a Gd b CuAlFe deposited on the layer c La d layer, where c=0.15, d=0.04; in CuAlFe c La d CuAlNi deposited on the layer e Ce f layer, where e=0.1, f=0.08; in CuAlNi e La f CuAlCo ​​deposited on the layer g La h layer, where g = 0.15, h = 0.04; and in CuAlCo g La h Layer coated with polyetheretherketone layer.

[0042] CuAlZr a Gd b The thickness of the layer is 40nm, CuAlFe c La d The thickness of the layer is 40nm, CuAlNi e Ce f The thickness of the layer is 40nm, CuAlCo g La h The thickness of the layer is 40 nm.

[0043] CuAlZr deposition a Gd b The specific process of the layer is: magnetron sputtering deposition of CuAlZr a Gd b layer, wherein the sputtering target is CuAlZr a Gd b Target material, wherein the power type is RF power supply, the sputtering power is 50W, the sputtering voltage is 40V, the argon flow rate is 30sccm, and the sputtering temperature is 100℃.

[0044] CuAlFe deposition c La d The specific process of the layer is: magnetron sputtering deposition of CuAlFe c La d layer, wherein the sputtering target is CuAlFe c La dTarget material, wherein the power type is RF power supply, the sputtering power is 70W, the sputtering voltage is 40V, the argon flow rate is 30sccm, and the sputtering temperature is 100℃.

[0045] CuAlNi deposition e Ce f The specific process of the layer is: magnetron sputtering deposition of CuAlNi e Ce f layer, wherein the sputtering target is CuAlNi e Ce f Target material, wherein the power type is RF power supply, the sputtering power is 50W, the sputtering voltage is 40V, the argon flow rate is 30sccm, and the sputtering temperature is 100℃.

[0046] CuAlCo ​​deposition g La h The specific process of the layer is: magnetron sputtering deposition of CuAlCo g La h layer, wherein the sputtering target is CuAlCo g La h Target material, wherein the power type is RF power supply, the sputtering power is 70W, the sputtering voltage is 70V, the argon flow rate is 30sccm, and the sputtering temperature is 100℃.

[0047] The specimens obtained in Example 2 were machined to obtain tensile strength specimens conforming to the ISO 527-2:2025 test standard. Five specimens were prepared. The tensile strength test was conducted in accordance with the ISO 527-2:2025 test standard. The average tensile strength of the five specimens was 109 MPa, and none of the five specimens exhibited delamination after being broken.

[0048] Example 3

[0049] A high-strength composite insulating material for cabinet-type mutual inductors, comprising: CuAlZr deposited on an epoxy resin layer a Gd b layer, where a=0.07, b=0.05; in CuAlZr a Gd b CuAlFe deposited on the layer c La d layer, where c=0.12, d=0.03; in CuAlFe c La d CuAlNi deposited on the layer e Ce f layer, where e=0.07, f=0.06; in CuAlNi e La f CuAlCo ​​deposited on the layerg La h layer, where g = 0.12, h = 0.03; and in CuAlCo g La h Layer coated with polyetheretherketone layer.

[0050] CuAlZr a Gd b The thickness of the layer is 35nm, CuAlFe c La d The thickness of the layer is 35nm, CuAlNi e Ce f The thickness of the layer is 35nm, CuAlCo g La h The thickness of the layer was 35 nm.

[0051] CuAlZr deposition a Gd b The specific process of the layer is: magnetron sputtering deposition of CuAlZr a Gd b layer, wherein the sputtering target is CuAlZr a Gd b Target material, wherein the power type is RF power supply, the sputtering power is 45W, the sputtering voltage is 35V, the argon flow rate is 20sccm, and the sputtering temperature is 90℃.

[0052] CuAlFe deposition c La d The specific process of the layer is: magnetron sputtering deposition of CuAlFe c La d layer, wherein the sputtering target is CuAlFe c La d Target material, wherein the power type is RF power supply, the sputtering power is 65W, the sputtering voltage is 35V, the argon flow rate is 20sccm, and the sputtering temperature is 90℃.

[0053] CuAlNi deposition e Ce f The specific process of the layer is: magnetron sputtering deposition of CuAlNi e Ce f layer, wherein the sputtering target is CuAlNi e Ce f Target material, wherein the power type is RF power supply, the sputtering power is 45W, the sputtering voltage is 35V, the argon flow rate is 20sccm, and the sputtering temperature is 90℃.

[0054] CuAlCo ​​deposition g La hThe specific process of the layer is: magnetron sputtering deposition of CuAlCo g La h layer, wherein the sputtering target is CuAlCo g La h Target material, wherein the power type is RF power supply, the sputtering power is 65W, the sputtering voltage is 60V, the argon flow rate is 20sccm, and the sputtering temperature is 90℃.

[0055] The specimens obtained in Example 3 were machined to obtain tensile strength specimens conforming to the ISO 527-2:2025 test standard. Five specimens were prepared. The tensile strength test was conducted in accordance with the ISO 527-2:2025 test standard. The average tensile strength of the five specimens was 107 MPa. None of the five specimens exhibited delamination after being broken.

[0056] Comparative Example 1

[0057] A polyetheretherketone layer was directly coated on the epoxy resin layer. The specimens obtained in Comparative Example 1 were machined to obtain tensile strength specimens meeting the ISO 527-2:2025 test standard. Five specimens were prepared. The tensile strength test was conducted in accordance with the ISO 527-2:2025 test standard. The average tensile strength of the five specimens was 50 MPa. All five specimens exhibited delamination before breaking the polyetheretherketone.

[0058] Comparative Example 2

[0059] CuAlZr deposited on epoxy layer a Gd b layer, where a=0.05, b=0.03; in CuAlZr a Gd b CuAlFe deposited on the layer c La d layer, where c=0.1, d=0.02; then in CuAlFe c La d A polyetheretherketone layer was coated on the layer. The remaining parameters and processes were the same as in Example 1. The sample obtained in Comparative Example 2 was machined to obtain tensile strength specimens that met the ISO 527-2:2025 test standard. A total of five samples were prepared. The tensile strength test was conducted in accordance with the ISO 527-2:2025 test standard. The average tensile strength of the five samples was 80 MPa. Three of the five samples exhibited delamination before the polyetheretherketone was broken.

[0060] Comparative Example 3

[0061] CuAlZr deposited on epoxy layer a Gd blayer, where a=0.2, b=0.2; in CuAlZr a Gd b CuAlFe deposited on the layer c La d layer, where c=0.2, d=0.2; in CuAlFe c La d CuAlNi deposited on the layer e Ce f layer, where e=0.2, f=0.2; in CuAlNi e La f CuAlCo ​​deposited on the layer g La h layer, where g = 0.2, h = 0.2; and in CuAlCo g La h A polyetheretherketone layer was coated on the polyetheretherketone layer. The remaining parameters and processes were the same as in Example 1. The sample obtained in Comparative Example 3 was machined to obtain tensile strength specimens that met the ISO 527-2:2025 test standard. A total of five samples were prepared. The tensile strength test was conducted in accordance with the ISO 527-2:2025 test standard. The average tensile strength of the five samples was 73 MPa. Three of the five samples exhibited delamination before the polyetheretherketone was broken.

[0062] Comparative Example 4

[0063] CuAlZr a Gd b The thickness of the layer is 80nm, CuAlFe c La d The thickness of the layer is 80nm, CuAlNi e Ce f The thickness of the layer is 80nm, CuAlCo g La h The layer thickness was 80 nm. The sample obtained in Comparative Example 4 was machined to obtain tensile strength specimens meeting the ISO 527-2:2025 test standard. Five specimens were prepared. The tensile strength test was conducted in accordance with the ISO 527-2:2025 test standard. The average tensile strength of the five specimens was 90 MPa. Two of the five specimens exhibited delamination before breaking the polyetheretherketone.

[0064] Comparative Example 5

[0065] CuAlZr deposition a Gd b The specific process of the layer is: magnetron sputtering deposition of CuAlZr a Gd b layer, wherein the sputtering target is CuAlZra Gd b target material, wherein the power type is RF power supply, the sputtering power is 100W, the sputtering voltage is 100V, the argon flow rate is 20sccm, and the sputtering temperature is 90°C.

[0066] CuAlFe deposition c La d The specific process of the layer is: magnetron sputtering deposition of CuAlFe c La d layer, wherein the sputtering target is CuAlFe c La d The target material is a radio frequency power supply, a sputtering power of 100 W, a sputtering voltage of 100 V, an argon flow rate of 20 sccm, and a sputtering temperature of 90° C. The metal film layer of Comparative Example 5 has visible cracks, and the tensile test is no longer performed.

[0067] It should be understood that the above-described specific embodiments of the present invention are merely illustrative or illustrative of the principles of the present invention and do not constitute limitations of the present invention. Therefore, any modifications, equivalent substitutions, improvements, etc. made without departing from the spirit and scope of the present invention should be included within the scope of protection of the present invention. In addition, the appended claims are intended to cover all variations and modifications that fall within the scope and metes and bounds of the appended claims, or equivalents thereof.

Claims

1. A high-strength composite insulating material for a cabinet-type mutual inductor, comprising: CuAlZr deposited on epoxy layer a Gd b layer, where a=0.05-0.1, b=0.03-0.06; In the CuAlZr a Gd b CuAlFe deposited on the layer c La d layer, where c = 0.1-0.15, d = 0.02-0.04; In the CuAlFe c La d CuAlNi deposited on the layer e Ce f layer, where e=0.05-0.1, f=0.04-0.08; In the CuAlNi e La f CuAlCo ​​deposited on the layer g La h layer, where g = 0.1-0.15, h = 0.02-0.04; and In the CuAlCo g La h A polyetheretherketone layer is coated on the layer.

2. The high-strength composite insulation material according to claim 1, wherein: The CuAlZr a Gd b The thickness of the layer is 30-40nm, the CuAlFe c La d The thickness of the layer is 30-40nm, the CuAlNi e Ce f The thickness of the CuAlCo ​​layer is 30-40 nm. g La h The thickness of the layer is 30-40 nm.

3. The high-strength composite insulation material according to claim 1, wherein: Depositing the CuAlZr a Gd b The specific process of the layer is: using magnetron sputtering to deposit the CuAlZr a Gd b layer, wherein the sputtering target is CuAlZr a Gd b Target material, wherein the power type is RF power supply, the sputtering power is 40-50W, the sputtering voltage is 30-40V, the argon flow rate is 20-30sccm, and the sputtering temperature is 80-100℃.

4. The high-strength composite insulation material according to claim 1, wherein: Depositing the CuAlFe c La d The specific process of the layer is: using magnetron sputtering to deposit the CuAlFe c La d layer, wherein the sputtering target is CuAlFe c La d Target material, wherein the power type is RF power supply, the sputtering power is 60-70W, the sputtering voltage is 30-40V, the argon flow rate is 20-30sccm, and the sputtering temperature is 80-100℃.

5. The high-strength composite insulation material according to claim 1, wherein: Depositing the CuAlNi e Ce f The specific process of the layer is: using magnetron sputtering to deposit the CuAlNi e Ce f layer, wherein the sputtering target is CuAlNi e Ce f Target material, wherein the power type is RF power supply, the sputtering power is 40-50W, the sputtering voltage is 30-40V, the argon flow rate is 20-30sccm, and the sputtering temperature is 80-100℃.

6. The high-strength composite insulation material according to claim 1, wherein: Deposition of the CuAlCo g La h The specific process of the layer is: using magnetron sputtering to deposit the CuAlCo g La h layer, wherein the sputtering target is CuAlCo g La h Target material, wherein the power type is RF power supply, the sputtering power is 60-70W, the sputtering voltage is 50-70V, the argon flow rate is 20-30sccm, and the sputtering temperature is 80-100℃.

7. A cabinet-type mutual inductor, comprising: High-strength composite insulation material for cabinet-type mutual inductor, the high-strength composite insulation material comprising: CuAlZr deposited on epoxy layer a Gd b layer, where a=0.05-0.1, b=0.03-0.06; In the CuAlZr a Gd b CuAlFe deposited on the layer c La d layer, where c = 0.1-0.15, d = 0.02-0.04; In the CuAlFe c La d CuAlNi deposited on the layer e Ce f layer, where e=0.05-0.1, f=0.04-0.08; In the CuAlNi e La f CuAlCo ​​deposited on the layer g La h layer, where g = 0.1-0.15, h = 0.02-0.04; and In the CuAlCo g La h A polyetheretherketone layer is coated on the layer.

8. The cabinet type mutual inductor according to claim 7, wherein: The CuAlZr a Gd b The thickness of the layer is 30-40nm, the CuAlFe c La d The thickness of the layer is 30-40nm, the CuAlNi e Ce f The thickness of the CuAlCo ​​layer is 30-40 nm. g La h The thickness of the layer is 30-40 nm.

9. The cabinet type mutual inductor according to claim 7, wherein: Depositing the CuAlZr a Gd b The specific process of the layer is: using magnetron sputtering to deposit the CuAlZr a Gd b layer, wherein the sputtering target is CuAlZr a Gd b Target material, wherein the power type is RF power supply, the sputtering power is 40-50W, the sputtering voltage is 30-40V, the argon flow rate is 20-30sccm, and the sputtering temperature is 80-100℃.

10. The cabinet type mutual inductor according to claim 7, wherein: Depositing the CuAlFe c La d The specific process of the layer is: using magnetron sputtering to deposit the CuAlFe c La d layer, wherein the sputtering target is CuAlFe c La d Target material, wherein the power type is RF power supply, the sputtering power is 60-70W, the sputtering voltage is 30-40V, the argon flow rate is 20-30sccm, and the sputtering temperature is 80-100℃.

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