Preparation method and application of silicon-based luminescent material

Abstract

The application relates to a preparation method and application of a silicon-based light-emitting material, wherein the preparation method comprises the following steps: step a, fixing a silicon wafer on a laser processing platform; and step b, performing pulse laser annealing treatment on the silicon wafer, wherein the pulse width of the pulse laser is less than 10 ‑9 s, the wavelength of the pulse laser is 343-1100 nm, and the repetition frequency of the pulse is 1 Hz-10 GHz. Room-temperature light emission of silicon in a 600-20000 nm wave band is realized, light emission outside the silicon band gap is realized, and the light emission wavelength of silicon is greatly expanded. The whole process flow is completely compatible with CMOS technology, the flow is simple, and the method has important industrial application value.

Description

Technical Field

[0001] This application mainly relates to the field of semiconductor silicon-based optoelectronic device fabrication, and in particular to a method for preparing and applying a silicon-based luminescent material. Background Technology

[0002] Currently, one of the biggest challenges facing silicon-based optoelectronic integration technology is the lack of on-chip silicon-based light sources. Due to the inherent indirect bandgap structure of silicon, it typically exhibits very low luminescence characteristics, making it theoretically unsuitable for fabricating efficient broadband light sources. However, in-depth research into silicon-based modified materials such as porous silicon, silicon microcavities, and erbium-doped silicon, as well as electro-PIN diodes, has made it possible to realize silicon light emission and even laser generation in the communication band.

[0003] Among them, silicon-based luminescent materials based on erbium-doped silicon have attracted widespread attention due to the numerous advantages of erbium, such as its luminescence center being located precisely in the communication band and its complete compatibility with CMOS processes. However, at room temperature, erbium-doped silicon materials suffer from defects such as non-radiative transition quenching, resulting in extremely low luminous efficiency and a relatively narrow luminous bandwidth, which has become a technical bottleneck for their industrial applications.

[0004] Although electroluminescent PIN diodes can also emit light, they can only achieve electroluminescent broadband infrared emission under reverse breakdown conditions. They cannot observe emission beyond 1600nm, and their emission quantum efficiency and output light power density are low, which limits their practical application range. Summary of the Invention

[0005] One objective of this application is to provide a method for preparing silicon-based luminescent materials and their applications, thereby addressing the problems in the prior art where erbium-doped silicon materials have extremely low luminous efficiency and relatively narrow luminous bandwidth at room temperature, as well as the low quantum efficiency and output power density of electroluminescent PIN diodes.

[0006] According to one aspect of this application, a method for preparing a silicon-based luminescent material is provided, the method comprising:

[0007] Step a: Fix the silicon wafer onto the laser processing platform;

[0008] Step b: Perform pulsed laser annealing on the silicon wafer, wherein the pulse width of the pulsed laser is less than 10. -9 The pulsed laser wavelength is 343–1100 nm, and the pulse repetition frequency is 1 Hz–10 GHz.

[0009] Optionally, in step b, the pulsed laser is controlled to be focused on the silicon wafer surface, and the moving speed of the laser focus is 0.001 to 500 mm / s.

[0010] Optionally, in step b, a 10x objective lens is used to focus on the silicon wafer surface, with a numerical aperture of 0.26.

[0011] Optionally, in step b, the number of pulses for pulsed laser annealing at each location on the silicon wafer surface is 1 to 10,000.

[0012] Optionally, the energy density of the pulsed laser annealing in step b is 0–20 J / cm². 2 .

[0013] Optionally, in step a, ions are implanted into the silicon wafer, the ions including any one or any combination of erbium ions, boron ions, and phosphorus ions.

[0014] The erbium ion implantation energy range is 10 keV to 2 MeV, and the dose range is 1 × 10⁻⁶. 14 ~5×10 17 cm -2 The implantation energy range for boron ions is 1 keV to 400 keV, and the dose range is 1 × 10⁻⁶. 14 ~10 18 cm -2 The phosphorus ion implantation energy range is 1 keV to 400 keV, and the dose range is 1 × 10⁻⁶. 14 ~10 18 cm -2 .

[0015] According to another aspect of this application, a silicon-based luminescent material is also provided, which is prepared by the aforementioned method.

[0016] According to another aspect of this application, a silicon-based high-efficiency broadband light-emitting diode is also provided, wherein the I-region of the light-emitting diode is the aforementioned silicon-based light-emitting material.

[0017] According to another aspect of this application, a silicon-based laser is also provided, comprising a light-emitting diode, a resonant cavity, and a silicon-based optical waveguide, wherein the I-region of the light-emitting diode is the aforementioned silicon-based light-emitting material.

[0018] Optionally, the light-emitting diode is forward biased to form an electroluminescent device, which is selected and enhanced by the resonant cavity to finally form a laser and is led out by the silicon-based optical waveguide.

[0019] Compared with existing technologies, this application utilizes pulsed laser annealing to achieve room-temperature emission of silicon in the 600–20000 nm wavelength range, realizing emission beyond the silicon bandgap and significantly extending the emission wavelength of silicon. It can rapidly obtain patterned fluorescent thin films with controllable emission, showing great application potential in infrared light sources, image displays, and information encryption and anti-counterfeiting. Furthermore, it can realize broadband infrared silicon-based light sources without rare-earth doping of silicon; the entire process is fully compatible with CMOS processes, resulting in low processing costs. Attached Figure Description

[0020] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the specific embodiments of this application will be described in detail below with reference to the accompanying drawings, wherein:

[0021] Figure 1 A schematic flowchart of a method for preparing a luminescent material according to one aspect of this application is shown.

[0022] Figure 2 This is a schematic diagram of a patterned broadband luminescent sample formed after pulsed laser annealing in one embodiment of this application;

[0023] Figure 3(a) shows a schematic diagram of the fluorescence spectrum of silicon after annealing at energies of 100 nJ and 300 nJ in one embodiment of this application;

[0024] Figure 3(b) shows a schematic diagram of the relationship between pulsed laser annealing energy and fluorescence peak intensity in one embodiment of this application;

[0025] Figures 3(c) and 3(d) show schematic diagrams of the fluorescence spectra of silicon after laser annealing with different energy pulses in one embodiment of this application;

[0026] Figure 4(a) shows the photofluorescence spectrum of near-infrared light in one embodiment of this application;

[0027] Figure 4(b) shows the near-infrared photoinduced external quantum efficiency curve in one embodiment of this application;

[0028] Figure 5(a) shows the visible light electrofluorescence spectrum in one embodiment of this application;

[0029] Figure 5(b) shows the electrofluorescence spectrum of near-infrared light in one embodiment of this application;

[0030] Figures 5(c) and 5(d) show the electrofluorescence spectrum of mid-infrared light in one embodiment of this application;

[0031] Figure 5(e) shows the near-infrared electroinduced external quantum efficiency curve in one embodiment of this application;

[0032] Figure 6A schematic diagram of the structure of a silicon-based laser according to an embodiment of this application is shown.

[0033] The same or similar reference numerals in the accompanying drawings represent the same or similar parts. Detailed Implementation

[0034] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the specific embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0035] Many specific details are set forth in the following description in order to provide a full understanding of this application. However, this application may also be implemented in other ways different from those described herein, and therefore this application is not limited to the specific embodiments disclosed below.

[0036] As indicated in this application and claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" are not specifically singular and may include plural forms. Generally speaking, the terms "comprising" and "including" only indicate the inclusion of explicitly identified steps and elements, which do not constitute an exclusive list, and the method or apparatus may also include other steps or elements.

[0037] Figure 1 This diagram illustrates a process flow chart of a method for preparing a silicon-based luminescent material according to one aspect of this application, the method comprising:

[0038] Step a: Fix the silicon wafer onto the laser processing platform.

[0039] The silicon wafer includes pure silicon or doped silicon, as well as SOI silicon wafers or silicon-based wafers grown by other methods with silicon on an insulating layer. The doped silicon can be doped with boron (B), phosphorus (P), erbium (Er), oxygen (O), or other elements or combinations thereof. Other silicon-based wafers can be silicon germanium (SiGe) wafers with epitaxial germanium on their surface. The cleaned silicon wafer is fixed on a laser processing platform, which moves the wafer to achieve scanning of the silicon wafer by pulsed laser light. It should be noted that whether the silicon wafer is pure silicon or doped with other elements, broadband light emission can be achieved through pulsed laser annealing.

[0040] In step a, the cleaning process for standard silicon wafers can be used, such as cleaning with acetone, followed by ethanol, and finally ultrasonic cleaning with water, or cleaning with concentrated sulfuric acid and hydrogen peroxide; thereby removing impurities and organic matter from the surface of the silicon wafer.

[0041] Step b: Perform pulsed laser annealing on the silicon wafer, wherein the pulse width of the pulsed laser is less than 10. -9 The pulsed laser wavelength is 343–1100 nm, and the pulse repetition frequency is 1 Hz–10 GHz.

[0042] Pulsed lasers include femtosecond lasers and picosecond lasers, with femtosecond lasers being preferred, wherein the pulse width of the femtosecond laser is less than 10. -12 The pulsed laser wavelength is 343–1030 nm, and the pulse repetition frequency is 1 Hz–10 GHz.

[0043] When performing laser annealing on silicon wafers, broadband luminescence can be achieved when the energy exceeds a critical value. This critical value was obtained through multiple experiments. For example, when the pulse repetition frequency of the pulsed laser is 100kHz and the processing is 0.1mm / s, the critical value is 180nJ. By selecting and combining pulse parameters, the energy can be made to reach or exceed this critical value; alternatively, controlling the number of pulses, firing more than 3000 pulses at a fixed position, can also make the energy exceed 180nJ, thus achieving broadband luminescence. Therefore, the pulse parameters can be adjusted so that the combined energy reaches the critical value, achieving broadband luminescence. When the energy is less than 180nJ, broadband luminescence appears in the infrared, and there is a spectral wavelength jump in the visible light. Therefore, at low energies (less than 180nJ), it can be applied to fluorescent anti-counterfeiting labels or information storage. It should be noted that the above-mentioned critical value of 180nJ is only an example under the condition of a pulse repetition frequency of 100kHz and 0.1mm / s. When the pulse repetition frequency is changed and other parameters are combined, the critical value will change. As long as the combined parameters are made to exceed the critical value, broadband luminescence can be achieved.

[0044] Laser annealing is performed on a silicon wafer surface using a laser controlled by a computer program. The laser is a pulsed laser, preferably a femtosecond laser. During the laser annealing process, the fixed or moving trajectory of the laser focus is set using 3Dmax software. The moving trajectory is determined by the shape of the pattern to be processed. After saving the DXF file, it can be directly imported into the pulsed laser processing control equipment.

[0045] By exciting free electrons in the conduction band of a silicon wafer with pulsed lasers, low-power continuous light can be used to excite the fluorescence of the material itself, thereby achieving long-bandwidth broadening, such as... Figure 2 As shown, a patterned broadband light-emitting sample is formed after the silicon wafer is subjected to pulsed laser annealing.

[0046] Next, in step b, the pulsed laser is controlled to be focused on the surface of the silicon wafer, and the moving speed of the laser focus is 0.001 to 500 mm / s.

[0047] In step b, a focusing method can be used to control the scanning speed of the laser for annealing. This involves focusing the pulsed laser first, thereby controlling the movement speed of the laser focus point, scanning point by point, and completing the annealing process on the silicon wafer. It should be noted that if there is a focusing deviation, the power of the pulsed laser can be increased to achieve broadband light emission.

[0048] For example, in one embodiment of this application, the center wavelength of the pulsed laser used in step b is 515 nm, the pulse width is 290 fs, the repetition frequency is 100 kHz, the scanning speed of the precision displacement stage, i.e. the moving speed of the laser focus, is 0.1 mm / s, the line spacing is 2 μm, and the laser single pulse energy is 300 nJ.

[0049] In another embodiment of this application, when the wavelength of the pulsed laser used in step b is 343 nm or 1030 nm, the pulse width of the laser is kept constant at 290 fs, the repetition frequency is 100 kHz, the laser focus moving speed is 0.1 mm / s, and the final single-pulse energy can reach 300 nJ. In some embodiments of this application, in step b, a 10x objective lens is used to focus on the silicon wafer surface, with a numerical aperture of 0.26; the energy density of the pulsed laser annealing is 0–20 J / cm². 2 .

[0050] When the pulse wavelength used in laser annealing is 515 nm, the spot diameter is: 1.22 × wavelength / numerical aperture = 2.4166 μm, and the energy density = energy / spot area; when the laser single pulse energy reaches 20 nJ, the corresponding energy density is 0.32 J / cm². 2 When the energy value reaches 300 nJ, the energy density is 5.2 J / cm³. 2 It should be noted that for an energy density of 3 J / cm³... 2 When the wavelength is around 3 J / cm², broadband infrared emission appears, and visible light exhibits a spectral wavelength jump. Therefore, for low energy densities (e.g., less than 3 J / cm²), this indicates a potential for infrared emission. 2 It can be applied to fluorescent anti-counterfeiting labels or information storage.

[0051] In another embodiment of this application, the wavelength of the pulsed laser is 515 nm. As shown in Figure 3(a), the fluorescence spectra of silicon after annealing with different energies of pulsed laser are 700 nm and 850 nm, respectively, showing a significant difference. Figure 3(b) shows the trend of fluorescence peak intensity with pulsed laser annealing energy. Within the pulsed laser annealing ranges of 0–180 nJ and 180–320 nJ, the fluorescence intensity first increases and then decreases with increasing pulsed laser annealing energy. It should be noted that when the pulsed laser annealing energy is below 180 nJ, the fluorescence peak wavelength is stably located at 700 nm, while when the pulsed laser annealing energy is above 180 nJ, the fluorescence peak broadens, and the fluorescence peak wavelength shifts to 800 nm. Specifically, as shown... Figure 3(c) and 3(d)As shown in Figure 3(c), the sub-line represents the fluorescence without pulse annealing. Based on this characteristic, it can be used to design fluorescent tags with tunable emission wavelengths and to create visible light LEDs.

[0052] By adjusting the laser power density, scanning speed, repetition frequency, and energy density, the power can be made high enough to excite the fluorescence of the sample, thus enabling the rapid acquisition of patterned fluorescent films with controllable luminescence. This has great application potential in fields such as infrared light sources, image display, and information encryption and anti-counterfeiting.

[0053] In step b, a defocusing method can also be used. In this case, it is not necessary to control the scanning speed of the laser. It is only necessary to complete the specified number of pulses at a fixed position. The number of pulses for pulsed laser annealing at each required fixed position on the silicon wafer surface can be 1 to 10,000. When the number of pulses is less than 100, narrow broadband light emission can be achieved for anti-counterfeiting labels or information storage. When the number of pulses for pulsed laser annealing is greater than 100, broadband light emission can be achieved. When the number of pulses is 3,000, the laser single pulse energy can also reach 300 nJ.

[0054] By utilizing pulsed laser annealing, room-temperature emission of silicon in the 600–20000 nm wavelength range was achieved. This wavelength range is currently detectable by existing detection equipment, enabling emission outside the silicon bandgap and significantly extending the emission wavelength of silicon. Furthermore, this pulsed laser annealing method eliminates the need for rare-earth doping of silicon to realize a broadband infrared silicon-based light source.

[0055] In one embodiment of this application, the preparation method further includes steps a1 and b1. Step a1, prior to step b, involves protecting the silicon wafer. This protection can be achieved by sputtering a protective layer or covering it with a glass sheet. The protective layer can be a SiO2 thin film, photoresist, etc. For example, SiO2 or other dielectric materials can be deposited on the silicon wafer surface using multi-target magnetron sputtering or atomic layer deposition methods. Alternatively, photoresist can be directly spin-coated to minimize debris generation. Step b1, following step b, involves removing the protection. This can be achieved by removing the glass sheet or using hydrofluoric acid to remove the protective layer.

[0056] In some embodiments of this application, in step a, ions are implanted into the silicon wafer. These ions include any one or a combination of erbium ions, boron ions, and phosphorus ions. The implantation energy of the erbium ions ranges from 10 keV to 2 MeV, and the dose ranges from 1 × 10⁻⁶. 14 ~5×10 17 cm -2 The implantation energy range for boron ions is 1 keV to 400 keV, and the dose range is 1 × 10⁻⁶. 14 ~10 18 cm -2The phosphorus ion implantation energy range is 1 keV to 400 keV, and the dose range is 1 × 10⁻⁶. 14 ~10 18 cm -2 .

[0057] When using the pulsed laser described in this application to anneal silicon wafers, it is not necessary to dope the silicon wafers with other elements. Of course, in practical applications, doping can also be performed, doping with any one or a combination of erbium ions, boron ions, and phosphorus ions, and then using a pulsed laser to anneal the doped silicon wafers, which can also expand the light emission range, but the light emission efficiency will be lower than that of undoped silicon.

[0058] By using a computer program to control the focusing and trajectory of a pulsed laser on a silicon surface, and adjusting the laser power, repetition frequency, and scanning speed, pulsed laser annealing can be performed on undoped or doped silicon wafers, ultimately resulting in a high-precision patterned broadband fluorescent thin film on the silicon.

[0059] According to another aspect of this application, a silicon-based luminescent material is also provided, which is prepared by the aforementioned method.

[0060] Using the aforementioned method for preparing silicon-based luminescent materials, ultra-wideband, high-efficiency room-temperature photoluminescence in the 600–1600 nm wavelength range and room-temperature electroluminescence in the 600–20000 nm wavelength range of silicon-based semiconductor materials were successfully achieved. This significantly expands the luminescence range of silicon and eliminates the need for doping other elements into the silicon wafer, thus avoiding rare-earth element doping. This provides a feasible technical means for the successful preparation of silicon luminescence and silicon laser light sources. It should be noted that 1600 nm is the limit detectable by currently used testing equipment, not the limit of luminescence.

[0061] The fabrication method described above for silicon-based light-emitting materials can solve the problems of low luminous efficiency, narrow light-emitting bandwidth, and low luminous intensity currently found in silicon materials. The entire process is fully compatible with CMOS technology, is simple, has low processing costs, and possesses significant industrial application value.

[0062] Experimental results show that after pulsed laser annealing, as Figure 4a As shown, the horizontal axis represents wavelength, and the vertical axis represents photoluminescence intensity (arbitrary unit, au). The silicon sample achieved broadband photoluminescence of 600–1600 nm, breaking the limitation that undoped silicon can only achieve band-edge emission at 1130 nm. The external quantum efficiency of infrared photoluminescence of silicon modified by pulsed laser annealing at room temperature is as follows: Figure 4bAs shown, the quantum efficiency exceeds 0.27% in the broadband range of 900–1600 nm, and increases with increasing pump power, indicating that it has not yet reached saturation. The photoluminescence results of the room-temperature infrared broadband ultra-intense luminescent material were obtained using a WITec Alpha300R detector, with silicon and indium gallium arsenide detectors operating at 214 K. The light source was a semiconductor laser with a wavelength of 532 ± 1 nm and a maximum output power of 75 mW. The quantum efficiency of the silicon-based luminescent material annealed by pulsed laser can be calculated as follows: First, the fluorescence spectrum of a commercially available Hamamatsu LED (L12509-0155G) with known power is calibrated under a microscope. Then, the fluorescence spectrum of the sample is measured. The ratio of the integral values ​​of the two values ​​represents the luminescence power of the sample, thus yielding the quantum efficiency of the sample's luminescence.

[0063] According to another aspect of this application, a silicon-based high-efficiency broadband light-emitting diode is also provided, wherein the I-region of the light-emitting diode is the aforementioned silicon-based light-emitting material.

[0064] This application provides a method for preparing room-temperature infrared broadband ultra-intense luminescent materials in silicon via pulsed laser annealing, which is applied to the fabrication of silicon-based high-efficiency broadband light-emitting diodes (LEDs). The silicon-based luminescent material prepared in the aforementioned embodiment is used in the field of LEDs. The I-region of this LED is the aforementioned silicon-based luminescent material, wherein the I-region is an intrinsic semiconductor region. A layer using the aforementioned silicon-based luminescent material as the intrinsic semiconductor is inserted between the P-type and N-type semiconductors to form a PIN structure. The I-region promotes the injection of more charge carriers, increases the recombination probability, and improves the luminous efficiency. The specific steps are as follows:

[0065] Step a: After processing the cleaned silicon wafer into a sample, the sample is fixed on a laser processing platform. The specific method for processing the silicon wafer is as follows: the cleaned silicon wafer is photolithographically patterned, followed by ion implantation (e.g., boron, phosphorus). The implanted ions are placed in the non-femtosecond region to form horizontal PIN junctions. Next, rapid annealing (thermal annealing) is performed to activate the implanted elements; subsequently, photolithography and etching are used to remove the edges of the PIN junctions to prevent device leakage; finally, the sample is formed. It should be noted that, in a specific embodiment of this application, a 220nm SOI substrate can be used for the laser annealing process in step b, enabling monolithic integration.

[0066] Step b: Use a computer program to control the laser to focus on the sample surface for laser annealing. The movement trajectory of the laser focus is set using 3Dmax software, saved as a DXF file, and then directly imported into the pulsed laser processing control equipment. The processing conditions are consistent with the preparation method of a luminescent material described in the above embodiment. The sample after thermal annealing is subjected to laser annealing, which occurs in region I, to generate silicon-based luminescent material in region I, thereby achieving the insertion of a layer of silicon-based luminescent material as intrinsic between P-type and N-type semiconductors.

[0067] Step c: 10nm chromium and 50nm gold are deposited in the patterned P and N regions to form low-resistance ohmic contacts, reduce contact resistance, improve current transmission efficiency, and finally fabricate a silicon-based high-efficiency broadband light-emitting diode.

[0068] Existing methods for electroluminescent PIN diodes only allow for wideband reverse-biased emission and narrowband forward-biased emission, and they do not test emission beyond 1600nm. Furthermore, their luminous efficiency and output power density are low, limiting their practical application range. In contrast, the LED described in this application is a wideband forward-biased LED that can detect emission beyond 1600nm. Its luminous efficiency and output power are greatly improved, enabling its application in fields such as infrared light sources, image displays, and information encryption and anti-counterfeiting, thus expanding its application scope.

[0069] Figure 5a and Figure 5b The visible and infrared electroluminescence spectra of the silicon-based high-efficiency broadband light-emitting diode are shown, respectively. The horizontal axis represents the wavelength, and the vertical axis represents the electroluminescence intensity (arbitrary unit, au). The emission wavelength covers 600-1600nm, which also exhibits broadband light emission characteristics. The test results are also obtained from the WITecAlpha300R in the above embodiment.

[0070] Furthermore, the luminescence characteristics of the silicon-based high-efficiency broadband light-emitting diode in the mid-infrared region were tested using a Fourier transform infrared spectrometer (IFS-80V, operating temperature 77K), and the results are as follows: Figure 5c With 5d, the light wavelength can reach 20μm, greatly extending the emission wavelength of silicon light-emitting diodes.

[0071] It should be noted that 20μm is not the emission limit of the light-emitting diode, but rather a limitation imposed by the HgCdTe detector; its actual emission wavelength may be wider.

[0072] Figure 5eThe diagram shows the quantum efficiency of a room-temperature infrared broadband ultra-high luminescence material in one embodiment of this application. After testing, the electroluminescence quantum efficiency is greater than 0.26% in the 900-1600nm band. This indicates that pulsed laser annealing can greatly improve the quantum efficiency of silicon luminescence under room temperature conditions, making it possible to develop silicon-based lasers with high room-temperature luminescence efficiency.

[0073] According to another aspect of this application, a silicon-based laser is also provided, comprising a light-emitting diode (LED), a resonant cavity, and a silicon-based optical waveguide, wherein the I-region of the LED is the aforementioned silicon-based light-emitting material. The LED is forward-biased to form an electroluminescent device, which is selected and enhanced by the resonant cavity to ultimately form a laser beam, which is then extracted by the silicon-based optical waveguide.

[0074] In some embodiments of this application, an application is also provided for the fabrication of a silicon-based high-efficiency broadband tunable laser by preparing a room-temperature infrared broadband ultra-intense luminescent material in silicon through pulsed laser annealing. That is, the luminescent material application in the above embodiments can be applied to a silicon-based laser, which includes a light-emitting diode, a resonant cavity, and a silicon-based optical waveguide. The light-emitting diode is a silicon-based PIN diode, and the I-region of the silicon-based PIN diode is based on the above-described method for preparing a silicon-based luminescent material. The resonant cavity uses a whispering-gallery resonant cavity, a distributed Bragg grating resonant cavity, a Fabry-Perot cavity, or other types of resonant cavities.

[0075] A silicon-based PIN diode is forward-biased to form an electroluminescent device. The light emitted by this electroluminescent device is selected and amplified by the resonant cavity, ultimately forming a laser beam which is then guided out by the silicon-based optical waveguide. Highly efficient broadband light emission can be generated even with the PIN junction forward-biased, improving the quantum efficiency of light emission and significantly increasing the output optical power density.

[0076] like Figure 6 As shown, in this embodiment, the silicon-based PIN diode and the distributed Bragg grating resonator are integrated. The current flow direction of the PIN diode is radial to the waveguide. The undoped or ion-implanted doped silicon-based light-emitting region (I-region) modified by pulsed laser is elongated. It should be noted that in other embodiments, the PIN diode and resonator can also be of other shapes, and the shape is not limited. This silicon-based optical waveguide is used to couple out the laser emitted by the PIN diode and the resonator. In the embodiments of this application, the silicon-based PIN diode, the resonator, and the silicon-based optical waveguide are formed on an SOI silicon wafer, wherein the SOI wafer is a silicon wafer with silicon on an insulating layer, such as... Figure 6As shown, it comprises three layers: silicon, silicon dioxide, and a silicon substrate. In silicon-based lasers, holes injected from the P-region and electrons injected from the N-region recombine in the intrinsic region after pulsed laser annealing, thereby generating broadband light emission. Due to the filtering effect of the high-quality resonant cavity, photons outside the set center wavelength (e.g., 1530 nm) are difficult to amplify within the resonant cavity.

[0077] The basic concepts have been described above. Obviously, for those skilled in the art, the above disclosure is merely illustrative and does not constitute a limitation of this application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements, and corrections to this application. Such modifications, improvements, and corrections are suggested in this application, and therefore remain within the spirit and scope of the exemplary embodiments of this application.

[0078] Furthermore, this application uses specific terms to describe embodiments of the application. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic related to at least one embodiment of the application. Therefore, it should be emphasized and noted that "an embodiment," "one embodiment," or "an alternative embodiment" mentioned twice or more in different locations in this specification do not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of the application can be appropriately combined.

[0079] In some embodiments, numbers describing the quantity of components and attributes are used. It should be understood that such numbers used in the description of embodiments are modified in some examples with the terms "approximately," "approximately," or "generally." Unless otherwise stated, "approximately," "approximately," or "generally" indicates that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may be changed depending on the characteristics required by individual embodiments. In some embodiments, numerical parameters should take into account specified significant digits and employ a general method of digit reservation. Although the numerical ranges and parameters used to confirm their breadth of scope in some embodiments of this application are approximate values, in specific embodiments, such values ​​are set as precisely as feasible.

Claims

1. A method for preparing a silicon-based luminescent material, characterized in that, The method includes: Step a: Fix the silicon wafer onto the laser processing platform; Step b: Perform pulsed laser annealing on the silicon wafer, wherein the pulse width of the pulsed laser is less than 10. -9 The pulsed laser wavelength is 343–1100 nm, and the pulse repetition frequency is 1 Hz–10 GHz.

2. The method according to claim 1, characterized in that, In step b, the pulsed laser is controlled to be focused on the surface of the silicon wafer, and the moving speed of the laser focus is 0.001 to 500 mm / s.

3. The method according to claim 2, characterized in that, In step b, a 10x objective lens is used to focus on the silicon wafer surface, with a numerical aperture of 0.

26.

4. The method according to claim 1, characterized in that, In step b, the number of pulses for pulsed laser annealing at each location on the silicon wafer surface is 1 to 10,000.

5. The method according to claim 1, characterized in that, In step b, the energy density of pulsed laser annealing is 0–20 J / cm². 2 .

6. The method according to claim 1, characterized in that, In step a, ions are implanted into the silicon wafer, the ions including any one or any combination of erbium ions, boron ions, and phosphorus ions. The erbium ion implantation energy range is 10 keV to 2 MeV, and the dose range is 1 × 10⁻⁶. 14 ~5×10 17 cm -2 ; The implantation energy range of boron ions is 1 keV to 400 keV, and the dose range is 1 × 10⁻⁶. 14 ~10 18 cm -2 ; The phosphorus ion implantation energy range is 1 keV to 400 keV, and the dose range is 1 × 10⁻⁶. 14 ~10 18 cm -2 .

7. A silicon-based luminescent material, prepared by the method according to any one of claims 1 to 6.

8. A silicon-based high-efficiency broadband light-emitting diode, characterized in that, The I region of the light-emitting diode is the silicon-based light-emitting material as described in claim 7.

9. A silicon-based laser, characterized in that, It includes a light-emitting diode, a resonant cavity, and a silicon-based optical waveguide, wherein the I region of the light-emitting diode is the silicon-based light-emitting material as described in claim 7.

10. The silicon-based laser according to claim 9, characterized in that, The light-emitting diode is forward biased to form an electroluminescent device, which is selected and enhanced by the resonant cavity, and finally forms a laser beam, which is then extracted by the silicon-based optical waveguide.

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