Semiconductor device and method for manufacturing semiconductor device

Abstract

The purpose of the present invention is to provide a technique capable of suppressing the flow of a molding resin between a die pad and an insulating sheet during a molding process. The semiconductor device includes: a die pad (1a) having an upper surface and a lower surface; a power chip (7) bonded to the upper surface of the chip pad (1a); an insulating sheet (2) bonded to the lower surface of the die pad (1a); a terminal (1c) connected to the die pad (1a) and extending in the lateral direction; an arm (9) which is connected to the die pad (1a), is positioned on the upper side of the upper surface, and can be pressed by a pin (10) provided in the upper die; and a molding resin (8) that seals the die pad (1a), the arm (9), the power chip (7), and the insulating sheet (2) such that a surface of the insulating sheet (2) on the opposite side from a surface on the die pad (1a) side is exposed. The molded resin (8) has a recess (8a) into which the pin (10) can be inserted at a position overlapping the arm (9) in plan view.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing the semiconductor device. Background Art

[0002] Conventionally, in a molding machine, one type of semiconductor manufacturing equipment, sealing is performed by injecting molding resin during the molding process. During the molding process, if there is a gap between the lower surface of the die pad and the contact surface of the lower mold forming the lower portion of the molding die, there is a problem: the molding resin enters through this gap, causing resin burrs on the lower surface of the die pad.

[0003] To solve this problem, Patent Document 1, for example, describes a method of providing a protrusion on the outer periphery of the back surface of the die pad to suppress the mold resin from flowing into the sealing prohibited area located in the center of the back surface side of the die pad. Prior art literature Patent Literature

[0004] Patent Document 1: Japanese Patent Application Publication No. 2018-56310 Summary of the Invention Technical problem to be solved by the invention

[0005] However, when the technology described in Patent Document 1 is applied to a method for manufacturing a semiconductor device having a structure in which an insulating sheet is bonded to the lower surface of a die pad, there is a problem in that the mold resin flows between the die pad and the insulating sheet depending on the injection conditions of the mold resin.

[0006] Therefore, an object of the present disclosure is to provide a technique that can suppress the flow of molding resin between a die pad and an insulating sheet during a molding process. Technical means for solving technical problems

[0007] A semiconductor device according to the present disclosure is formed in a mold composed of an upper mold and a lower mold, and includes: a die pad having a first main surface and a second main surface opposite to the first main surface; a semiconductor element bonded to the first main surface of the die pad; an insulating sheet bonded to the second main surface of the die pad; a terminal connected to the die pad and extending in a lateral direction; a die pad pressing portion connected to the die pad, located above the first main surface, and capable of being pressed by a pin provided in the upper mold; and a molding resin that seals the die pad, the die pad pressing portion, the semiconductor element, and the insulating sheet so that a surface of the insulating sheet opposite to the die pad side is exposed, the molding resin having a recess into which the pin can be inserted so as to overlap with the die pad pressing portion when viewed from above. Effects of the Invention

[0008] According to the present disclosure, during the molding process, the die pad pressing portion is pressed by pins provided in the upper mold, thereby pressing the die pad against the insulating sheet. This improves the adhesion between the die pad and the insulating sheet, thereby preventing molding resin from flowing between the die pad and the insulating sheet during the molding process. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 This is a cross-sectional view of the semiconductor device according to the first embodiment. Figure 2 This is a plan view of the lead frame before the molding step in the first embodiment. Figure 3 This is a perspective view of the lead frame before the molding step in the first embodiment. Figure 4 This is a plan view of the lead frame before the molding step in a modification of the first embodiment. Figure 5 This is a perspective view of a lead frame before the molding step in a modification of the first embodiment. Figure 6 This is a flowchart showing a method for manufacturing a semiconductor device according to the first embodiment. Figure 7 This is a plan view of the lead frame before the molding step in the second embodiment. Figure 8 This is a perspective view of the lead frame before the molding step in the second embodiment. Figure 9 This is a flowchart showing a method for manufacturing a semiconductor device according to the second embodiment. Figure 10 This is a top view of the lead frame before the molding step in the third embodiment. Figure 11 This is a perspective view of the lead frame before the molding step in the third embodiment. Figure 12 This is a flowchart showing a method for manufacturing a semiconductor device according to the third embodiment. DETAILED DESCRIPTION

[0010] <Implementation Method 1> Embodiment 1 will be described below using the drawings. Figure 1 This is a cross-sectional view of the semiconductor device according to the first embodiment. Figure 2 This is a plan view of the lead frame 1 before the molding step in the first embodiment. Figure 3 This is a perspective view of the lead frame 1 before the molding process in the first embodiment. Figure 3 , only the die pad 1a and its surroundings are shown. This also applies to the subsequent perspective views.

[0011] like Figure 1 As shown, the semiconductor device includes a die pad 1 a , a power chip 7 as a semiconductor element, a control IC (Integrated Circuit) 5 , an insulating sheet 2 , a terminal 1 c , an arm 9 as a die pad pressing portion, a wire 6 , and a molded resin 8 .

[0012] like Figures 1 to 3 As shown, the die pad 1a has an upper surface (first main surface) and a lower surface (second main surface) opposite the upper surface. Terminal 1c is connected to the die pad 1a via a step 1b and extends in the lateral direction. The die pad 1a, step 1b, and terminal 1c are included in the lead frame 1.

[0013] like Figure 1 As shown, the power chip 7 is bonded to the upper surface of the chip pad 1a via the bonding material 4. The power chip 7 is, for example, an IGBT (Insulated Gate Bipolar Transistor), a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), or an RC-IGBT (Reverse-Conducting IGBT) in which an IGBT and a freewheeling diode are formed in a single semiconductor substrate. The control IC 5 is a component for controlling the power chip 7 and is bonded to the upper surface of the terminal 1c via the bonding material 4. In addition, Figure 2 and Figure 3 The control IC 5 is omitted in the figure. This also applies to the following top view and perspective view.

[0014] One end of the wire 6 is connected to the control IC 5, and the other end is connected to the electrode pad on the power chip 7. Another wire 6 connects the electrode pad on the power chip 7 to the terminal 1c. In addition, another wire 6 connects the control IC 5 to the terminal 1c.

[0015] The insulating sheet 2 is composed of an insulating layer 2 b and a heat dissipation plate 2 a provided on the lower surface of the insulating layer 2 b , and is bonded to the lower surface of the die pad 1 a .

[0016] Next, the characteristic feature of the semiconductor device according to the first embodiment, namely, arm 9, will be described. The semiconductor device is formed in a mold (not shown) consisting of an upper mold and a lower mold. To ensure the insulation resistance of the semiconductor device, it is necessary to apply pressure from the molding resin 8 injected into the mold to the insulating sheet 2 via the lower surface of the die pad 1a. Arm 9 is used for this purpose. When the lead frame 1 is clamped between the upper and lower molds during the molding process, pins 10 mounted on the upper mold press the arm 9 downward, thereby bringing the die pad 1a into close contact with the insulating sheet 2.

[0017] like Figures 1 to 3 As shown, arm 9 is connected to die pad 1a and extends upward from the upper surface of die pad 1a, so as to be positioned further above the upper surface of die pad 1a. Furthermore, the upper end of arm 9 is bent horizontally, enabling it to be pressed by pins 10 provided in the upper mold. During the molding process, pins 10 press the upper end of arm 9, thereby pressing die pad 1a against insulating sheet 2.

[0018] Molded resin 8 seals the die pad 1a, arm 9, power chip 7, control IC 5, and insulating sheet 2, leaving the surface of insulating sheet 2 opposite to the die pad 1a side, i.e., the lower surface, exposed. Molded resin 8 has a recess 8a to allow pin 10 to be inserted so that it overlaps arm 9 when viewed from above. Because pin 10 protrudes downward during the molding process, recess 8a, having the same shape as pin 10, is formed after the molding process. The upper end of arm 9 is exposed from molded resin 8 via recess 8a.

[0019] Alternatively, arm 9 may be integrally formed with die pad 1a or bonded to die pad 1a via a bonding material such as solder. While recess 8a is described as being large enough to expose the upper end of arm 9, the depth of recess 8a is not limited thereto. For example, recess 8a may be deep enough to prevent exposure of arm 9. The depth of recess 8a can be adjusted during the curing process of molded resin 8 and at the timing of removing pin 10.

[0020] Next, the position of the arm 9 relative to the die pad 1 will be described. Figure 2 and Figure 3As shown, two arms 9 are provided, and the two arms 9 are located on diagonal lines of the die pad 1a when viewed from above. In addition, one of the two arms 9 is located between the power chip 7 and the terminal 1c when viewed from above. The two arms 9 are located on diagonal lines of the die pad 1a when viewed from above, so that the die pad 1a can be pressed over the entire surface.

[0021] in addition, Figure 2 and Figure 3 In FIG. 1 , the two arms 9 are provided at the upper left and lower right of the die pad 1 a , but may be provided at the upper right and lower left.

[0022] Next, a modification of the first embodiment will be described. Figure 4 This is a plan view of the lead frame 1 before the molding step in the modification of the first embodiment. Figure 5 This is a perspective view of the lead frame 1 before the molding step in a modification of the first embodiment.

[0023] like Figure 4 and Figure 5 As shown in FIG. 1 , the arm 9 is located on the opposite side of the die pad 1a to the connection terminal 1c side when viewed from above. More specifically, the arm 9 is located at the center of the side of the die pad 1a opposite to the connection terminal 1c side when viewed from above. With this structure, the die pad 1a can be pressed over the entire surface and Figure 2 and Figure 3 The number of arms 9 and pins 10 can be reduced compared to the case of .

[0024] Next, use Figures 1 to 3 and Figure 6 , a method for manufacturing a semiconductor device according to embodiment 1 is described. Figure 6 This is a flowchart showing a method for manufacturing a semiconductor device according to the first embodiment.

[0025] First, in the preparation step, the leadframe 1 is prepared (step S1). Next, in the first leadframe processing step, the leadframe 1 is stamped using a molding die consisting of an upper die and a lower die to form the die pad 1a, the frame portion 1d surrounding the die pad 1a, and the arms 9 (step S2). In the bonding step, the power chip 7 is bonded to the upper surface of the die pad 1a, and the insulating sheet 2 is bonded to the lower surface of the die pad 1a (step S3). Furthermore, the control IC 5 is bonded to the terminal 1c.

[0026] Next, in the molding process, while the upper end of the arm 9 is pressed by the pin 10 provided in the upper mold, the chip pad 1a, the arm 9, the power chip 7, the control IC 5 and the insulating sheet 2 are sealed with the molding resin 8 so that the lower surface of the insulating sheet 2 is exposed (step S4).

[0027] Finally, although not shown in the figure, the remaining part of the lead frame 1 is cut off by punching, thereby completing the Figure 1 The semiconductor device shown.

[0028] As described above, in the first embodiment, the semiconductor device includes: a die pad 1a having an upper surface and a lower surface; a power chip 7 bonded to the upper surface of the die pad 1a; an insulating sheet 2 bonded to the lower surface of the die pad 1a; a terminal 1c connected to the die pad 1a and extending in the lateral direction; an arm 9 connected to the die pad 1a, located above the upper surface, and capable of being pressed by a pin 10 provided in an upper mold; and a molded resin 8 that seals the die pad 1a, the arm 9, the power chip 7, and the insulating sheet 2 so that the surface of the insulating sheet 2 opposite to the die pad 1a side is exposed. The molded resin 8 has a recess 8a for inserting the pin 10 at a position overlapping the arm 9 when viewed from above.

[0029] Therefore, during the molding process, the arms 9 are pressed by the pins 10 provided in the upper mold, thereby pressing the die pad 1a against the insulating sheet 2. This improves the adhesion between the die pad 1a and the insulating sheet 2, thereby preventing the molding resin 8 from flowing between the die pad 1a and the insulating sheet 2 during the molding process. This can improve the yield and quality of semiconductor devices.

[0030] Furthermore, the semiconductor device includes two arms 9 positioned diagonally with respect to the die pad 1a in a plan view. This allows the die pad 1a to be pressed over its entire surface, thereby improving adhesion between the die pad 1a and the insulating sheet 2 over the entire surface.

[0031] Furthermore, the arm 9 is located on the opposite side of the die pad 1a from the connection terminal 1c side in a plan view. Therefore, the die pad 1a can be pressed over the entire surface and can be connected to the die pad 1a. Figure 2 and Figure 3 The number of arms 9 and pins 10 can be reduced compared to the case of .

[0032] <Implementation Method 2> Next, a semiconductor device according to Embodiment 2 will be described. Figure 7 This is a plan view of the lead frame 1 before the molding step in the second embodiment. Figure 8 This is a perspective view of the lead frame 1 before the molding step in Embodiment 2. In Embodiment 2, the same components as those described in Embodiment 1 are denoted by the same reference numerals and their descriptions are omitted.

[0033] like Figure 7 and Figure 8As shown, in the second embodiment, a bridge 11 is provided in place of the arm 9. The bridge 11 connects the die pad 1a and the frame portion 1d to prevent the die pad 1a from floating when the molding resin 8 is injected during the molding process. Specifically, the bridge 11 connects the die pad 1a adjacent to the frame 1d among the plurality of die pads 1a to the frame 1d.

[0034] The die pad 1a is positioned relative to the frame portion 1d in the direction in which the mold resin 8 is injected. Specifically, the die pad 1a is located below the frame portion 1d. Therefore, the bridge 11 connecting the die pad 1a and the frame portion 1d has a stepped shape. Bridge 11 prevents the die pad 1a from floating during the injection of the mold resin 8 during the molding process, thereby ensuring that molding pressure is appropriately applied to the insulating sheet 2.

[0035] Next, use Figures 7 to 9 , a method for manufacturing a semiconductor device according to embodiment 2 is described. Figure 9 This is a flowchart showing a method for manufacturing a semiconductor device according to the second embodiment.

[0036] First, in the preparation step, the leadframe 1 is prepared (step S11). Next, in the first leadframe processing step, the leadframe 1 is stamped using a mold consisting of an upper mold and a lower mold to form the die pad 1a, a frame portion 1d located above the upper surface of the die pad 1a and surrounding the die pad 1a, and a bridge 11 having a step connecting the die pad 1a and the frame portion 1d (step S12). In the bonding step, the power chip 7 is bonded to the upper surface of the die pad 1a, and the insulating sheet 2 is bonded to the lower surface of the die pad 1a (step S13). Furthermore, the control IC 5 is bonded to the terminal 1c.

[0037] Next, in the molding process, the die pad 1a, the bridge 11, the power chip 7, and the control IC 5 (see FIG. 1 ) are molded with a molding resin 8. Figure 1 ) and the insulating sheet 2 are sealed so that the lower surface of the insulating sheet 2 is exposed (step S14).

[0038] Finally, in the second lead frame processing step, the remaining portion of the lead frame 1 including the bridge 11 is cut by punching (step S15 ), thereby completing the semiconductor device.

[0039] As described above, in the second embodiment, the bridge 11 suppresses the floating of the die pad 1a during the injection of the molding resin 8 in the molding process, thereby appropriately applying molding pressure to the insulating sheet 2. This improves the adhesion between the die pad 1a and the insulating sheet 2, thereby preventing the molding resin 8 from flowing between the die pad 1a and the insulating sheet 2 during the molding process. This can be expected to improve the yield and quality of semiconductor devices.

[0040] <Implementation Method 3> Next, a semiconductor device according to a third embodiment will be described. Figure 10 This is a plan view of the lead frame 1 before the molding step in the third embodiment. Figure 11 This is a perspective view of the lead frame 1 before the molding step in Embodiment 3. In Embodiment 3, the same components as those described in Embodiments 1 and 2 are denoted by the same reference numerals, and their description is omitted.

[0041] like Figure 10 and Figure 11 As shown, in Embodiment 3, in addition to the arms 9, bridges 11 are provided. Bridges 11 connect the die pads 1a adjacent to the frame 1d among the plurality of die pads 1a to the frame 1d. Arms 9 are provided on the die pads 1a among the plurality of die pads 1a that are not provided with bridges 11. In other words, arms 9 are provided on the die pads 1a among the plurality of die pads 1a that are not adjacent to the frame portion 1d. Furthermore, two arms 9 are provided on each die pad 1a.

[0042] Furthermore, similarly to the first embodiment, two arms 9 may be located on diagonal lines of the die pad 1 a in plan view, and one arm 9 may be located on the opposite side of the die pad 1 a from the connection terminal 1 c in plan view.

[0043] Next, use Figures 10 to 12 , a method for manufacturing a semiconductor device according to embodiment 3 is described. Figure 12 This is a flowchart showing a method for manufacturing a semiconductor device according to the third embodiment.

[0044] First, in the preparation process, the lead frame 1 is prepared (step S21). Next, in the first lead frame processing step, the lead frame 1 is stamped using a mold composed of an upper mold and a lower mold to form the die pad 1a, the frame portion 1d located above the upper surface of the die pad 1a and surrounding the die pad 1a, the arm 9 connected to the die pad 1a and located above the upper surface of the die pad 1a, and the bridge 11 having a step connecting the die pad 1a and the frame portion 1d (step S22). In the bonding process, the power chip 7 is bonded to the upper surface of the die pad 1a, and the insulating sheet 2 is bonded to the lower surface of the die pad 1a (step S23). In addition, the control IC 5 is bonded to the terminal 1c.

[0045] Next, in the molding process, the die pad 1a, the arm 9, the bridge 11, the power chip 7, the control IC 5 (see FIG. 1 ) are sealed with the molding resin 8 while the upper end of the arm 9 is pressed by the pin 10 provided in the upper mold. Figure 1 ) and the insulating sheet 2 so that the lower surface of the insulating sheet 2 is exposed (step S24).

[0046] Finally, in the second lead frame processing step, the remaining portion of the lead frame 1 including the bridge 11 is cut by punching (step S25 ), thereby completing the semiconductor device.

[0047] As described above, in the third embodiment, during the molding process, the pins 10 provided in the upper mold press the arms 9, and the bridge 11 suppresses the floating of the die pad 1a. Therefore, compared with the cases of the first and second embodiments, the adhesion between the die pad 1a and the insulating sheet 2 can be further improved, and during the molding process, the flow of the molding resin 8 between the die pad 1a and the insulating sheet 2 can be further suppressed. As a result, compared with the cases of the first and second embodiments, it is expected that the yield rate and quality of the semiconductor device will be improved.

[0048] The various embodiments can be freely combined, or can be appropriately modified or omitted.

[0049] Hereinafter, various aspects of the present disclosure are collectively described as supplementary notes.

[0050] (Supplementary Note 1) A semiconductor device, A semiconductor device formed in a mold consisting of an upper mold and a lower mold, comprising: a die pad having a first main surface and a second main surface opposite to the first main surface; a semiconductor element bonded to the first main surface of the die pad; an insulating sheet bonded to the second main surface of the die pad; a terminal connected to the chip pad and extending in a lateral direction; a die pad pressing portion connected to the die pad, located above the first main surface, and pressed by a pin provided in the upper mold; and a mold resin that seals the die pad, the die pad pressing portion, the semiconductor element, and the insulating sheet so that a surface of the insulating sheet opposite to the die pad side surface is exposed, The mold resin has a recess into which the pin can be inserted at a position overlapping with the die pad pressing portion in a plan view.

[0051] (Supplementary Note 2) The semiconductor device according to Supplementary Note 1, having two chip pad pressing portions, The two die pad pressing portions are located on diagonal lines of the die pad in a plan view.

[0052] (Supplementary Note 3) The semiconductor device according to Supplementary Note 1, The die pad pressing portion is located on a side of the die pad opposite to a side connected to the terminal in a plan view.

[0053] (Supplementary Note 4) A method for manufacturing a semiconductor device, comprising: a preparation process of preparing a lead frame; a first lead frame processing step of stamping the lead frame using a molding die composed of an upper die and a lower die to form a die pad having a first main surface and a second main surface opposite to the first main surface, a frame portion surrounding the die pad, and a die pad pressing portion connected to the die pad and located above the first main surface of the die pad; a bonding step of bonding a semiconductor element to the first main surface of the die pad and bonding an insulating sheet to the second main surface of the die pad; and A molding process, in which the chip pad, the chip pad pressing portion, the semiconductor element and the insulating sheet are sealed with a molding resin while the chip pad pressing portion is pressed by a pin provided in the upper mold, so that the surface on the opposite side of the surface on the chip pad side of the insulating sheet is exposed.

[0054] (Supplementary Note 5) A method for manufacturing a semiconductor device, comprising: a preparation process of preparing a lead frame; a first lead frame processing step of stamping the lead frame using a molding die composed of an upper die and a lower die to form a die pad having a first main surface and a second main surface opposite to the first main surface, a frame portion located above the first main surface of the die pad and surrounding the die pad, and a bridge having a step connecting the die pad and the frame portion; a bonding step of bonding a semiconductor element to the first main surface of the die pad and bonding an insulating sheet to the second main surface of the die pad; a molding step of sealing the die pad, the bridge, the semiconductor element, and the insulating sheet with a molding resin so that a surface of the insulating sheet opposite to the surface on the die pad side is exposed; and The second lead frame processing step is to cut the bridge by the punching process.

[0055] (Supplementary Note 6) A method for manufacturing a semiconductor device, comprising: a preparation process of preparing a lead frame; a first lead frame processing step of stamping the lead frame using a molding die composed of an upper die and a lower die to form a die pad having a first main surface and a second main surface opposite to the first main surface, a frame portion located above the first main surface of the die pad and surrounding the die pad, a die pad pressing portion connected to the die pad and located above the first main surface of the die pad, and a bridge having a step connecting the die pad and the frame portion; a bonding step of bonding a semiconductor element to the first main surface of the die pad and bonding an insulating sheet to the second main surface of the die pad; a molding step of sealing the die pad, the die pad pressing portion, the bridge, the semiconductor element, and the insulating sheet with a molding resin while the die pad pressing portion is pressed by a pin provided in the upper mold, so that a surface of the insulating sheet opposite to the surface on the die pad side is exposed; and The second lead frame processing step is to cut the bridge by the punching process. Label Description

[0056] 1 lead frame 1a Chip pad 1c terminal 1d frame part 2 insulation sheets 7 Power Chip 8Molding resin 8a depression 9 arms 10 pins 11 bridges.

Claims

1. A semiconductor device formed in a molding die consisting of an upper die and a lower die, characterized in that include: a die pad having a first main surface and a second main surface opposite to the first main surface; a semiconductor element bonded to the first main surface of the die pad; an insulating sheet bonded to the second main surface of the die pad; a terminal connected to the chip pad and extending in a lateral direction; a die pad pressing portion connected to the die pad, located above the first main surface, and capable of being pressed by a pin provided in the upper mold; and a mold resin that seals the die pad, the die pad pressing portion, the semiconductor element, and the insulating sheet so that a surface of the insulating sheet opposite to the die pad side surface is exposed, The mold resin has a recess into which the pin can be inserted at a position overlapping with the die pad pressing portion in a plan view.

2. The semiconductor device according to claim 1, wherein having two chip pad pressing portions, The two die pad pressing portions are located on diagonal lines of the die pad in a plan view.

3. The semiconductor device according to claim 1, wherein The die pad pressing portion is located on a side of the die pad opposite to a side connected to the terminal in a plan view.

4. A method for manufacturing a semiconductor device, characterized in that: include: a preparation process of preparing a lead frame; a first lead frame processing step of stamping the lead frame using a molding die composed of an upper die and a lower die to form a die pad having a first main surface and a second main surface opposite to the first main surface, a frame portion surrounding the die pad, and a die pad pressing portion connected to the die pad and located above the first main surface of the die pad; a bonding step of bonding a semiconductor element to the first main surface of the die pad and bonding an insulating sheet to the second main surface of the die pad; as well as A molding process, in which the chip pad, the chip pad pressing portion, the semiconductor element and the insulating sheet are sealed with a molding resin while the chip pad pressing portion is pressed by a pin provided in the upper mold, so that the surface on the opposite side of the surface on the chip pad side of the insulating sheet is exposed.

5. A method for manufacturing a semiconductor device, characterized in that: include: a preparation process of preparing a lead frame; a first lead frame processing step of stamping the lead frame using a molding die composed of an upper die and a lower die to form a die pad having a first main surface and a second main surface opposite to the first main surface, a frame portion located above the first main surface of the die pad and surrounding the die pad, and a bridge having a step connecting the die pad and the frame portion; a bonding step of bonding a semiconductor element to the first main surface of the die pad and bonding an insulating sheet to the second main surface of the die pad; a molding step of sealing the die pad, the bridge, the semiconductor element, and the insulating sheet with a molding resin so that a surface of the insulating sheet opposite to the surface on the die pad side is exposed; as well as The second lead frame processing step is to cut the bridge by the punching process.

6. A method for manufacturing a semiconductor device, characterized in that: include: a preparation process of preparing a lead frame; a first lead frame processing step of stamping the lead frame using a molding die composed of an upper die and a lower die to form a die pad having a first main surface and a second main surface opposite to the first main surface, a frame portion located above the first main surface of the die pad and surrounding the die pad, a die pad pressing portion connected to the die pad and located above the first main surface of the die pad, and a bridge having a step connecting the die pad and the frame portion; a bonding step of bonding a semiconductor element to the first main surface of the die pad and bonding an insulating sheet to the second main surface of the die pad; a molding step of sealing the die pad, the die pad pressing portion, the bridge, the semiconductor element, and the insulating sheet with a molding resin while the die pad pressing portion is pressed by a pin provided in the upper mold, so that a surface of the insulating sheet opposite to the die pad side is exposed; as well as The second lead frame processing step is to cut the bridge by the punching process.

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