Atomic layer deposition method

By performing cleaning, heating and baking, and surface treatment in the atomic layer deposition method, the chlorine (Cl) content in the process chamber and on the film surface is reduced, which solves the problem of increased film resistance caused by high chlorine content and improves the electrical performance of semiconductor devices.

CN120719279BActive Publication Date: 2026-06-09BEIJING INTEGRATED CIRCUIT EQUIPMENT INNOVATION CENTER CO LTD
View PDF 2 Cites 0 Cited by

Patent Information

Application Number
CN202511062525.2
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-07-30
Publication Date
2026-06-09
Estimated Expiration
2045-07-30

AI Technical Summary

Technical Problem

In existing atomic layer deposition methods, the high chloride (Cl) content in the process chamber leads to increased film resistance, which affects the electrical performance of semiconductor devices.

Method used

After forming the target film on the substrate using atomic layer deposition, a cleaning gas is introduced for cleaning, the process chamber temperature is increased for high-temperature baking, and then an inert gas and a reactive gas are introduced for surface treatment to reduce the Cl content in the process chamber and on the surface of the film.

Benefits of technology

It effectively reduced the chlorine (Cl) content in the process chamber and on the surface of the film, improved the film quality and the process chamber environment, and enhanced the electrical performance of semiconductor devices.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN120719279B_ABST
    Figure CN120719279B_ABST
Patent Text Reader

Abstract

This invention relates to the field of semiconductor processing technology, and more specifically, to an atomic layer deposition method. The provided atomic layer deposition method includes: forming a target film layer on a substrate using atomic layer deposition within a process chamber; introducing a cleaning gas into the process chamber for cleaning; raising the temperature of the process chamber to a target temperature and introducing an inert gas into the process chamber for high-temperature baking; and introducing a reactant gas and a carrier gas into the process chamber for surface treatment, thereby reducing the content of chlorine-containing byproducts on the surface of the target film layer and within the process chamber. This invention can reduce the chlorine content within the process chamber and on the film layer surface, thereby improving the electrical performance of semiconductor devices.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Atomic layer deposition (ALD) thin film deposition equipment having cleaning apparatus and cleaning method

    US20020007790A1

  • Process for forming low resistivity titanium nitride films

    US5279857A