Intelligent semiconductor LED lamp strip with low light attenuation rate

Abstract

The application discloses a kind of intelligent semiconductor LED lamp strips with low light decay rate, it is related to semiconductor technical field, including LED lamp pearl, flexible substrate and heat-conducting wire.Multiple LED lamp pearl is connected in series by wire, LED lamp pearl includes surface GaN p-n homojunction structure and fluorescent powder layer, fluorescent powder layer is coated on surface GaN p-n homojunction structure;LED lamp pearl is fixed on flexible substrate to form disc array or bending array;Heat-conducting wire one end is connected to the bottom of LED lamp pearl, the other end is connected to active heat dissipation structure;Active heat dissipation structure is parallel to the power line of LED lamp pearl, and active heat dissipation structure includes TEC semiconductor.The application optimizes carrier injection by surface GaN p-n homojunction structure, reduces efficiency drop, significantly reduces non-radiative recombination and optical loss, prolongs LED life;And support disc or bending shape arrangement, improve space utilization;And TEC active heat dissipation system is parallel to LED power supply, and the intensity of heat dissipation is adjusted with brightness self-adaption, effectively inhibits heat-induced light decay.

Description

TECHNICAL FIELD

[0001] The application relates to the technical field of semiconductors, in particular to an intelligent semiconductor LED lamp strip with low light decay rate. BACKGROUND

[0002] LED lamp strips are widely used in lighting and decoration fields due to their high efficiency, low power consumption and flexibility, but the light decay rate is a key problem limiting their performance and service life. The light decay rate is mainly caused by the following factors:

[0003] Material defects: non-radiative recombination centers in the pn junction lead to a decrease in light-emitting efficiency and an increase in optical loss.

[0004] Efficiency reduction: the efficiency of carrier injection decreases under high current density, and the light decay phenomenon is more significant, especially in high-brightness white light applications.

[0005] Heat accumulation: a large amount of heat is generated during high-power operation, and traditional passive heat dissipation cannot dynamically adapt to power changes, resulting in an increase in the working temperature of the LED and accelerating light decay and performance degradation.

[0006] However, the prior art mainly focuses on the electrical configuration, optical diffusion or substrate design of the lamp strip, and there are few comprehensive solutions for the optimization of the pn junction structure, dynamic thermal management and flexible array layout. SUMMARY

[0007] In order to solve the technical problems in the background art, the application provides an intelligent semiconductor LED lamp strip with low light decay rate, and the specific technical scheme is as follows:

[0008] An intelligent semiconductor LED lamp strip with low light decay rate comprises:

[0009] LED lamp beads, the number of which is multiple, the multiple LED lamp beads being connected in series through wires, the LED lamp beads comprising a surface GaN p-n homojunction structure and a phosphor layer, the surface GaN p-n homojunction structure being formed through selective area regrowth, and the phosphor layer being coated on the surface GaN p-n homojunction structure;

[0010] a flexible substrate, the LED lamp beads being fixed on the flexible substrate to form a disc-shaped array or a bent array;

[0011] a heat-conducting wire, one end of which is connected to the bottom of the LED lamp bead, and the other end of which is connected to an active heat dissipation structure;

[0012] the active heat dissipation structure being connected in parallel with the power line of the LED lamp bead, and the active heat dissipation structure comprising a TEC semiconductor.

[0013] Preferably, the surface GaN p-n homojunction structure comprises:

[0014] a sapphire substrate;

[0015] a buffer layer formed on the sapphire substrate;

[0016] an InGaN / GaN multi-quantum well active layer formed on the buffer layer;

[0017] a p-type GaN layer formed on the active layer by selective area regrowth;

[0018] an n-type GaN layer formed on the p-type GaN layer.

[0019] Preferably, the thickness of the p-type GaN layer and the n-type GaN layer is 100-300 nm, and the multi-quantum well active layer includes 5-7 pairs of quantum wells, with an InGaN well thickness of 2-4 nm and a GaN barrier thickness of 10-15 nm.

[0020] Preferably:

[0021] the phosphor layer is YAG:Ce or LuAG:Ce phosphor mixed with silicone and coated on the surface of the n-type GaN layer;

[0022] the flexible substrate is covered with a high reflectivity coating;

[0023] the LED lamp bead further includes an encapsulation layer and a heat-conducting pad, the encapsulation layer is transparent silicone covering the phosphor layer and the surface GaN p-n homojunction structure, and the heat-conducting pad is aluminum nitride fixed at the bottom of the sapphire substrate and connected to the heat-conducting wire.

[0024] Preferably:

[0025] the disc-shaped array includes a circular disc or a polygonal disc structure, and the active heat dissipation structure is located in the center of the disc-shaped array;

[0026] or the zigzag array includes a back-and-forth zigzag line, a back-and-forth curve or a back-and-forth rectangular zigzag extension structure, and the active heat dissipation structure is located on one side of the zigzag array.

[0027] Preferably:

[0028] the flexible substrate is a polyimide printed circuit board with a thickness of 0.1-0.2 mm;

[0029] and / or the high reflectivity coating is a silver-based coating with a thickness of 50-150 nm;

[0030] and / or the heat-conducting wire is an aluminum nitride ceramic wire with a diameter of 0.5-1 mm;

[0031] and / or the phosphor layer has a thickness of 50-100 μm.

[0032] and / or the encapsulation layer has a thickness of 0.3-0.7 mm;

[0033] and / or the thermal pad has a thickness of 0.1-0.3 mm.

[0034] Preferably, the TEC semiconductor is a Bi2Te3-based thermoelectric cooling semiconductor, and the active heat dissipation structure further comprises a variable resistor connected in series with the TEC semiconductor.

[0035] Preferably, the variable resistor is connected with a heat dissipation intensity adjusting knob.

[0036] Preferably:

[0037] The surface GaN p-n homojunction structure has a nanopillar microstructure of 100-300 nm;

[0038] The flexible substrate is covered with a silica gel light-transmitting layer having a thickness of 1-2 mm.

[0039] Preferably, a constant current driver connected in series with the plurality of LED lamp beads is further included.

[0040] The intelligent semiconductor LED lamp strip with low light decay rate provided by the present application has the following beneficial effects:

[0041] 1. Through the surface GaN p-n homojunction structure, the carrier injection is optimized, the efficiency drop is reduced, the non-radiative recombination and optical loss are significantly reduced, and the LED life is prolonged.

[0042] 2. The disc-shaped or bent arrangement is supported, diversified application scenarios are adapted, and the space utilization rate is improved.

[0043] 3. The TEC active heat dissipation system is connected in parallel with the LED power supply, the heat dissipation intensity is adaptively adjusted with the brightness, and the light decay caused by heat is effectively inhibited. BRIEF DESCRIPTION OF DRAWINGS

[0044] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed to be used in the embodiments or prior art description will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments described in the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0045] Figure 1 Disc-shaped whole arrangement schematic diagram of the intelligent semiconductor LED lamp strip with low light decay rate provided by the present application;

[0046] Figure 2A schematic diagram of a bending array of the intelligent semiconductor LED lamp strip with low light decay rate according to an embodiment of the present application is provided.

[0047] Figure 3 A schematic diagram of a circuit structure of the intelligent semiconductor LED lamp strip with low light decay rate according to an embodiment of the present application is provided.

[0048] Figure 4 A flow chart of forming a surface GaN p-n homojunction structure according to an embodiment of the present application is provided.

[0049] Reference numerals

[0050] 1-LED lamp bead; 2-wire; 3-heat-conducting wire; 4-active heat dissipation structure; 41-TEC semiconductor; 42-variable resistor. DETAILED DESCRIPTION

[0051] In order to make the technical solution of the present application better understood by those skilled in the art, the present application will be described in detail below in combination with the drawings, and the description in this part is only exemplary and explanatory, and should not have any limiting effect on the protection scope of the present application.

[0052] It should be noted that: similar reference numerals represent similar items in the following drawings, therefore, once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings.

[0053] It should be noted that: similar reference numerals represent similar items in the following drawings, therefore, once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings.

[0054] In addition, the terms "horizontal", "vertical", "overhang" and the like do not mean that the components must be absolutely horizontal or overhanging, but can be slightly inclined. For example, "horizontal" only means that its direction is relatively more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.

[0055] In the description of the present application, it is also necessary to explain that, unless otherwise explicitly specified and limited, the terms "arrangement", "installation", "connection", "connection" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be connected inside two elements. For those skilled in the art, the specific meanings of the above terms in the present application can be understood according to the specific circumstances.

[0056] See Figures 1 to 4 The embodiment provides a smart semiconductor LED lamp strip with low light decay rate, comprising:

[0057] The plurality of LED lamp beads 1 are connected in series through the wires 2. The LED lamp bead 1 comprises a surface GaN p-n homojunction structure and a fluorescent powder layer. The surface GaN p-n homojunction structure is formed through selective area regrowth. The fluorescent powder layer is coated on the surface GaN p-n homojunction structure.

[0058] The flexible substrate is used to fix the LED lamp bead 1 to form a disc-shaped array or a bending array.

[0059] The heat-conducting wire 3 is connected to the bottom of the LED lamp bead 1 at one end and connected to the active heat dissipation structure 4 at the other end.

[0060] The LED lamp bead adopts the surface GaN p-n homojunction structure, the p-n junction is formed through selective area regrowth (MOVPE), and the plasma damage caused by dry etching is avoided. The structure is used to place the p-GaN layer between the MQW and the n-GaN, optimize the hole injection efficiency, reduce the efficiency drop, and output a single 450 nm blue light spectrum. The fluorescent powder layer (such as YAG:Ce or LuAG:Ce) converts the blue light into 4000-6000K white light (CRI>80), which meets the high-brightness lighting requirements.

[0061] The flexible substrate adopts polyimide FPC (thickness 0.1-0.2 mm), supports a disc-shaped (disc, square disc, angular disc-shaped) or bending array (folded line, curve, rectangular bending), provides mechanical flexibility and high temperature resistance. The surface of the substrate is coated with a silver-based high-reflectivity coating to reduce light absorption and improve light efficiency.

[0062] The heat-conducting wire uses aluminum nitride (AlN) ceramic wire (thermal conductivity about 170 W / m·K, electrical insulation >10 14 Ω·cm), one end of which is connected to the AlN heat-conducting pad at the bottom of the LED lamp bead, and the other end is connected to the ceramic substrate of the TEC heat sink, which ensures efficient heat conduction and reduces the working temperature of the LED.

[0063] The active heat dissipation structure connects a TEC semiconductor (Bi2Te3-based, cooling power 5-20 W) in parallel with the LED power supply, adaptively adjusting the heat dissipation intensity according to the LED current (brightness). The parallel design ensures priority power supply to the LED (80-90%), while the TEC utilizes the remaining power (0.5-1.5 A) to achieve dynamic thermal management and maintain the temperature below 60℃.

[0064] Compared to single blue LEDs, this invention achieves white light output through phosphors, expands the array layout (disc and bent), and introduces TEC active heat dissipation, solving the heat accumulation problem in high-brightness white light applications. Intelligent heat dissipation is adjusted through parallel circuits to achieve automated control, making it suitable for complex lighting scenarios.

[0065] The intelligent semiconductor LED light strip with low light decay rate provided in this embodiment has the following beneficial effects:

[0066] By optimizing carrier injection through a surface GaN pn homojunction structure, efficiency degradation is reduced, nonradiative recombination and optical loss are significantly decreased, and LED lifetime is extended.

[0067] It supports disc-shaped or bent-shaped arrangements to adapt to diverse application scenarios and improve space utilization.

[0068] The TEC active cooling system is connected in parallel with the LED power supply and adaptively adjusts the heat dissipation intensity according to the brightness, effectively suppressing heat-induced light decay.

[0069] The active heat dissipation structure 4 is connected in parallel with the power line of the LED bead 1, and the active heat dissipation structure 4 includes a TEC semiconductor 41.

[0070] Further, please see Figure 4 The surface GaN pn homojunction structure includes:

[0071] Sapphire substrate.

[0072] A buffer layer is formed on a sapphire substrate.

[0073] An InGaN / GaN multi-quantum-well active layer is formed on a buffer layer.

[0074] p-type GaN layers are formed on the active layer through selective regional regrowth.

[0075] The n-type GaN layer is formed on the p-type GaN layer.

[0076] Furthermore, the thickness of both the p-type GaN layer and the n-type GaN layer is 100~300 nm, the multi-quantum-well active layer includes 5~7 pairs of quantum wells, the InGaN well thickness is 2~4 nm, and the GaN barrier thickness is 10~15 nm.

[0077] Wherein, the layer structure provides mechanical support based on sapphire substrate (thickness about 430 pm), and the buffer layer (un-doped u-GaN, thickness about 2 pm) reduces lattice mismatch. InGaN / GaN multi-quantum well (MQW) as active layer, 5-7 pairs of quantum well (InGaN well thickness 2-4 nm, GaN barrier thickness 10-15 nm) optimizes carrier recombination, and emits 450 nm blue light. The p-GaN layer (doped with Mg, hole concentration about 3×10 17 / cm 3 ) and the n-GaN layer (doped with Si, electron concentration about 5×10 18 / cm 3 ) are formed by MOVPE selective area regrowth, thickness 100-300 nm, ensuring low contact resistance and high efficient carrier injection.

[0078] The document "Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth" shows that p-GaN placed between MQW and n-GaN (LED-II structure) can significantly improve hole injection efficiency, reduce efficiency droop, and eliminate 365 nm GaN band edge emission, ensuring single 450 nm spectrum. The present application follows this structure and optimizes the MQW parameters (well / barrier thickness) to further improve white light conversion efficiency.

[0079] By precisely controlling the thickness of p-GaN and n-GaN, the present application balances carrier diffusion and electrical performance, avoiding the problem of increased resistance caused by excessive thickness or depletion region caused by excessive thinness. The 5-7 pairs of quantum well design of MQW still maintains low efficiency droop under high current density, suitable for high brightness white light applications.

[0080] Further:

[0081] The phosphor layer uses YAG:Ce or LuAG:Ce phosphor, mixed with silicone and coated on the surface of the n-type GaN layer.

[0082] The flexible substrate surface is covered with a high reflectivity coating.

[0083] The LED lamp bead 1 also includes an encapsulation layer and a heat-conducting pad. The encapsulation layer uses transparent silicone, covering the phosphor layer and the surface GaN p-n homojunction structure. The heat-conducting pad uses aluminum nitride, fixed at the bottom of the sapphire substrate, connected to the heat-conducting wire 3.

[0084] In this embodiment, YAG:Ce or LuAG:Ce phosphor (thickness 50-100 pm) is mixed with silicone (refractive index about 1.4) and coated on the n-GaN surface by dispensing or spraying to convert 450 nm blue light into 4000-6000 K white light (CRI > 80). YAG:Ce provides high luminous efficacy, and LuAG:Ce enhances thermal stability, adapting to different application requirements.

[0085] A silver-based coating (thickness 50-150 nm) is sputtered on the surface of the flexible substrate to reduce light absorption by the substrate and improve white light extraction efficiency, achieving optical optimization.

[0086] A transparent silicone encapsulation layer (thickness 0.3-0.7 mm, refractive index about 1.4) protects the LED and optimizes light output. An AlN heat-conducting pad (thickness 0.1-0.3 mm, thermal conductivity about 170 W / m·K) is fixed at the bottom of the sapphire substrate and connected to a heat-conducting wire to ensure efficient heat conduction.

[0087] The thickness of the phosphor layer (50-100 pm) balances light conversion efficiency and heat management. Excessive thickness may cause light scattering loss, while insufficient thickness may affect white light quality. The wide-band high reflectivity (450 nm and 4000-6000 K) of the silver-based coating is superior to that of traditional aluminum-based coatings (reflectivity about 80-85%)

[0088] Further:

[0089] The disc-shaped array includes circular or polygonal disc structures, and the active heat dissipation structure 4 is located in the center of the disc-shaped array.

[0090] Or the bending array includes back-and-forth zigzag, back-and-forth curved or back-and-forth rectangular bending extension structures, and the active heat dissipation structure 4 is located on one side of the bending array.

[0091] The disc-shaped array includes circular discs (diameter 20-50 cm), square discs (side length 20-50 cm) or polygonal discs (such as triangular, pentagonal, hexagonal, side length 20-50 cm), and the LED lamp beads are arranged along concentric or equidistant paths, and the TEC heat sink (diameter 5-10 cm) is placed in the center, suitable for decorative lighting (such as chandeliers). The polygonal disc increases design flexibility and adapts to complex spaces.

[0092] The bending array includes back-and-forth zigzag (zigzag angle 90° or 135°), back-and-forth curved (sine wave or arc) or rectangular bending extension (along the major axis), and the TEC heat sink is located on one side, suitable for long strip-shaped lighting (such as walls, stairs). The unit spacing is 5-10 mm to ensure light output.

[0093] Compared with single-chip layout, the present application extends the array form, the disc-shaped array provides uniform light distribution, the bent array supports long-distance coverage, and the rectangular bent design is particularly suitable for linear lighting applications (such as building profiles). The central / side layout of the TEC optimizes the thermal management efficiency.

[0094] Further:

[0095] The flexible substrate is a polyimide printed circuit board with a thickness of 0.1-0.2 mm.

[0096] And / or the high-reflectivity coating is a silver-based coating with a thickness of 50-150 nm.

[0097] And / or the heat-conducting wire 3 is an aluminum nitride ceramic wire with a diameter of 0.5-1 mm.

[0098] And / or the thickness of the fluorescent powder layer is 50-100 μm.

[0099] And / or the thickness of the encapsulation layer is 0.3-0.7 mm.

[0100] And / or the thickness of the heat-conducting pad is 0.1-0.3 mm.

[0101] Further, the TEC semiconductor 41 is a Bi2Te3-based thermoelectric cooling semiconductor, and the active heat dissipation structure 4 further includes a variable resistor 42 connected in series with the TEC semiconductor 41.

[0102] Further, the adjustment end of the variable resistor 42 is connected with a heat dissipation intensity adjustment knob.

[0103] Wherein, the TEC heat dissipation system adopts a Bi2Te3-based thermoelectric module, and active refrigeration is achieved through thermoelectric cooling, and the TEC is connected in parallel with the LED power supply (12V / 24V). When the LED current increases, the TEC current increases synchronously, and the refrigeration power is adaptively adjusted with the brightness.

[0104] The TEC branch is connected in series with a variable resistor (0-100Ω), which is adjusted by a 10kΩ linear potentiometer knob to control the TEC current ratio (0-100%), which can provide multi-gear or stepless gear heat dissipation intensity adjustment. The knob can be installed in the control box to enhance user interaction.

[0105] Compared with the heat dissipation design not involved in the traditional LED light strip, the TEC parallel structure of the present application utilizes the change of LED current to realize dynamic thermal management, and the knob adjustment further improves flexibility, and is suitable for different environments (such as high-temperature or low-temperature scenes). The high efficiency and compact size of the Bi2Te3 module are suitable for light strip integration.

[0106] Further:

[0107] The surface GaN p-n homojunction structure has a nanopillar microstructure of 100-300 nm.

[0108] The flexible substrate is covered with a silicone light-transmitting layer with a thickness of 1-2 mm.

[0109] The n-GaN surface is formed with a nanopillar with a period of 100-300 nm by photolithography or wet etching, reduces total internal reflection, and can improve the light extraction efficiency by about 10%.

[0110] The silicone light-transmitting layer has a thickness of 1-2 mm and a refractive index of about 1.4, forms a diffusion surface, and can ensure white light uniformity.

[0111] The nanopillar microstructure optimizes the light extraction efficiency of white light output, and the thickness range of the silicone light-transmitting layer balances light diffusion and mechanical protection, enhancing the uniformity of the lamp strip in decorative lighting.

[0112] Further, a constant-current driver in series with the plurality of LED lamp beads 1 is further included.

[0113] The constant-current driver voltage drop is compensated by a copper trace or an intermediate power supply connection point. The constant-current design avoids current fluctuations and prolongs the service life.

[0114] The constant-current driver works in cooperation with a TEC parallel circuit to ensure electrical stability, which is superior to a traditional single-chip circuit and is suitable for large-scale lamp strip applications.

[0115] It should be noted that in this document, the terms "comprising", "containing", or any other variant thereof are intended to cover non-exclusive inclusion, so that processes, methods, articles, or devices that include a series of elements not only include those elements, but also include other elements not explicitly listed, or inherent to such processes, methods, articles, or devices.

[0116] The principles and implementation modes of the present application are described by specific examples in this document, and the above example descriptions are only used to help understand the method of the present application and its core idea. The above is only a preferred embodiment of the present application. It should be noted that due to the limited nature of the language expression, there are objectively infinite specific structures, and for ordinary skilled persons in the technical field, without departing from the principles of the present application, a number of improvements, refinements or changes can be made, or the above technical features can be combined in an appropriate manner; these improvements, refinements, changes or combinations, or the application of the inventive concept and technical solution to other fields without improvement, shall be regarded as the protection scope of the present application.

Claims

1. A smart semiconductor LED light strip with low light decay rate, characterized in that, The LED lamp bead (1) is provided with a surface GaN p-n homojunction structure formed by selective area regrowth and a phosphor layer coated on the surface GaN p-n homojunction structure. The LED lamp bead (1) is fixed on the flexible substrate to form a disc-shaped array or a bending array. The heat-conducting wire (3) is connected to the bottom of the LED lamp bead (1) at one end and to the active heat dissipation structure (4) at the other end. The active heat dissipation structure (4) is connected in parallel with the power line of the LED lamp bead (1), and the active heat dissipation structure (4) comprises a TEC semiconductor (41) and a variable resistor (42) connected in series with the TEC semiconductor (41), and the adjusting end of the variable resistor (42) is connected with a heat dissipation intensity adjusting knob. The surface GaN p-n homojunction structure comprises: a sapphire substrate; a buffer layer formed on the sapphire substrate; an InGaN / GaN multi-quantum well active layer formed on the buffer layer, the multi-quantum well active layer comprising 5-7 pairs of quantum wells, an InGaN well being 2-4 nm thick and a GaN barrier being 10-15 nm thick; a p-type GaN layer formed on the active layer by selective area regrowth; an n-type GaN layer formed on the p-type GaN layer; the phosphor layer is made of YAG:Ce or LuAG:Ce phosphor mixed with silica gel and coated on the surface of the n-type GaN layer; the LED lamp bead (1) further comprises a heat-conducting pad made of aluminum nitride, fixed on the bottom of the sapphire substrate and connected with the heat-conducting wire (3). The thickness of the p-type GaN layer and the n-type GaN layer is 100-300 nm.

2. The low lumen depreciation smart semiconductor LED light strip of claim 1, wherein, 3. The intelligent semiconductor LED lamp strip with low light decay rate according to claim 1, characterized in that: the surface of the flexible substrate is covered with a high reflectivity coating; the LED lamp bead (1) further comprises an encapsulating layer made of transparent silica gel, covering the phosphor layer and the surface GaN p-n homojunction structure.

4. The intelligent semiconductor LED lamp strip with low light decay rate according to claim 1, characterized in that: the disc-shaped array comprises a circular disc or a polygonal disc structure, and the active heat dissipation structure (4) is located in the center of the disc-shaped array; or the bending array comprises a back-and-forth folding line, a back-and-forth curve or a back-and-forth rectangular bending extension structure, and the active heat dissipation structure (4) is located on one side of the bending array.

5. The intelligent semiconductor LED lamp strip with low light decay rate according to claim 3, characterized in that: the flexible substrate is a polyimide printed circuit board with a thickness of 0.1-0.2 mm; and / or the high reflectivity coating is a silver-based coating with a thickness of 50-150 nm; and / or the heat-conducting wire (3) is an aluminum nitride ceramic wire with a diameter of 0.5-1 mm; and / or the thickness of the phosphor layer is 50-100 μm. ​ And / or the encapsulation layer thickness is 0.3-0.7 mm; And / or the thermal pad thickness is 0.1-0.3 mm.

6. The low lumen depreciation smart semiconductor LED light strip of claim 1, wherein, The TEC semiconductor (41) is a Bi2Te3-based thermoelectric refrigeration semiconductor.

7. The intelligent semiconductor LED lamp strip with low light decay rate according to claim 1, characterized in that: The surface GaN p-n homojunction structure has a nano-pillar microstructure of 100-300 nm; The flexible substrate is covered with a silica gel light-transmitting layer with a thickness of 1-2 mm.

8. The low lumen depreciation smart semiconductor LED light strip of claim 1, wherein, A constant current driver in series with the plurality of LED lamp beads (1) is further included.

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