Semiconductor device

Abstract

The semiconductor device includes at least one terminal including a conductive cylindrical holder and a metal pin inserted into the holder. In addition, the semiconductor device includes a terminal supporting body that supports the holder, and a sealing resin that covers a part of the holder and the terminal supporting body. The sealing resin has a resin main surface facing one side in the thickness direction. The bracket has a first surface located at an end on one side in the thickness direction, and a first outer surface extending in the thickness direction. The first surface is located at a position different from that of the resin main surface in the thickness direction. The first outer side surface is in contact with the sealing resin. The metal pins protrude further toward one side in the thickness direction than the resin main surface.

Description

[0001] This application is a divisional application; the application number of the parent application is "2023800373377", the application date is April 13, 2023, and the name of the invention is "Semiconductor Device". Technical Field

[0002] The present disclosure relates to a semiconductor device. Background Art

[0003] In the past, semiconductor devices having power switching elements such as MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and IGBT (Insulated Gate Bipolar Transistor) were known. Such semiconductor devices are installed in all electronic devices from industrial equipment to home appliances, information terminals, and automotive equipment. Patent document 1 discloses a conventional semiconductor device (power module). The semiconductor device described in patent document 1 includes a semiconductor element and a supporting substrate (ceramic substrate). The semiconductor element is, for example, an IGBT made of Si (silicon). The supporting substrate supports the semiconductor element. The supporting substrate includes an insulating base material and a conductor layer stacked on both sides of the base material. The base material is, for example, made of ceramic. Each conductor layer is, for example, made of Cu (copper), and a semiconductor element is bonded to one of the conductor layers.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Laid-Open No. 2021-190505 Summary of the Invention

[0007] Problems to be solved by the invention

[0008] In recent years, electronic devices have been required to be more energy-efficient, have higher performance, and be smaller in size. Consequently, there is a need for improved performance and smaller in size of power modules mounted on electronic devices.

[0009] One object of the present disclosure is to provide a semiconductor device that is improved compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, one object of the present disclosure is to provide a semiconductor device that is suitable for achieving improved performance and miniaturization.

[0010] The semiconductor device provided by the first scheme of the present disclosure comprises: at least one terminal, which includes a conductive cylindrical bracket and a metal pin inserted into the above-mentioned bracket; a terminal support body, which supports the above-mentioned bracket; and a sealing resin, which covers a portion of the above-mentioned bracket and the above-mentioned terminal support body, the above-mentioned sealing resin has a resin main surface facing one side in the thickness direction, the above-mentioned bracket has a first surface located at an end portion on one side in the above-mentioned thickness direction and a first outer surface extending in the above-mentioned thickness direction, the above-mentioned first surface is located at a different position from the above-mentioned resin main surface in the above-mentioned thickness direction, the above-mentioned first outer surface is in contact with the above-mentioned sealing resin, and the above-mentioned metal pin protrudes further to one side in the above-mentioned thickness direction than the above-mentioned resin main surface.

[0011] The semiconductor device provided by the second embodiment of the present disclosure comprises: a supporting substrate having a main surface facing one side in the thickness direction; at least one terminal including a conductive bracket arranged on the above-mentioned main surface, and a metal pin inserted into the above-mentioned bracket; and a sealing resin having a resin main surface on one side in the above-mentioned thickness direction and covering at least a portion of the above-mentioned supporting substrate, wherein in at least any one of the above-mentioned at least one terminal, the entirety of the above-mentioned bracket is exposed from the above-mentioned sealing resin, and the above-mentioned metal pin protrudes further to one side in the above-mentioned thickness direction than the above-mentioned resin main surface.

[0012] Effects of the Invention

[0013] According to the above configuration, a structure that is preferable in terms of achieving performance improvement, miniaturization, etc. can be provided in a semiconductor device.

[0014] Other features and advantages of the present disclosure will become more apparent from the following detailed description with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a perspective view showing a semiconductor device according to the first embodiment of the present disclosure.

[0016] Figure 2 It is a perspective view of main parts of a semiconductor device showing a first embodiment of the present disclosure.

[0017] Figure 3 It is a perspective view of main parts of a semiconductor device showing a first embodiment of the present disclosure.

[0018] Figure 4 It is a plan view showing the semiconductor device according to the first embodiment of the present disclosure.

[0019] Figure 5 It is a plan view of a main part of a semiconductor device showing the first embodiment of the present disclosure.

[0020] Figure 6It is a side view of a main part of the semiconductor device showing the first embodiment of the present disclosure.

[0021] Figure 7 This is an enlarged plan view of a main part of the semiconductor device showing the first embodiment of the present disclosure.

[0022] Figure 8 It is a plan view of a main part of a semiconductor device showing the first embodiment of the present disclosure.

[0023] Figure 9 It is a plan view of a main part of a semiconductor device showing the first embodiment of the present disclosure.

[0024] Figure 10 It is a side view showing the semiconductor device according to the first embodiment of the present disclosure.

[0025] Figure 11 It is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure.

[0026] Figure 12 It is along Figure 5 Cross-sectional view along line XII-XII.

[0027] Figure 13 It is along Figure 5 Cross-sectional view along line XIII-XIII.

[0028] Figure 14 This is an enlarged cross-sectional view of a main portion of the semiconductor device showing the first embodiment of the present disclosure.

[0029] Figure 15 This is an enlarged cross-sectional view of a main portion of the semiconductor device showing the first embodiment of the present disclosure.

[0030] Figure 16 It is magnified Figure 13 A partial enlarged view of a part of .

[0031] Figure 17 It is magnified Figure 4 A partial enlarged view of a part of .

[0032] Figure 18 It is along Figure 5 Cross-sectional view of line XVIII-XVIII.

[0033] Figure 19 It is along Figure 5 Cross-sectional view of the XIX-XIX line.

[0034] Figure 20 It is along Figure 5 Cross-sectional view of the XX-XX line.

[0035] Figure 21 It is along Figure 5 Cross-sectional view of line XXI-XXI.

[0036] Figure 22 It is along Figure 5 Cross-sectional view of line XXII-XXII.

[0037] Figure 23 A semiconductor device according to a first modification of the first embodiment is shown. Figure 16 Magnified cross-sectional view of the same.

[0038] Figure 24 A semiconductor device according to a second modification of the first embodiment is shown. Figure 16 Magnified cross-sectional view of the same.

[0039] Figure 25 A semiconductor device according to a third modified example of the first embodiment is shown. Figure 16 Magnified cross-sectional view of the same.

[0040] Figure 26 A semiconductor device according to a fourth modified example of the first embodiment is shown. Figure 16 Magnified cross-sectional view of the same.

[0041] Figure 27 A semiconductor device according to a fifth modification of the first embodiment is shown. Figure 16 Magnified cross-sectional view of the same.

[0042] Figure 28 It is a perspective view showing a semiconductor device according to a second embodiment of the present disclosure.

[0043] Figure 29 The semiconductor device of the second embodiment of the present disclosure is Figure 16 Magnified cross-sectional view of the same.

[0044] Figure 30 This is a perspective view showing a semiconductor device according to a first embodiment of the second aspect of the present disclosure.

[0045] Figure 31 It is a plan view showing a semiconductor device according to a first embodiment of the second aspect of the present disclosure.

[0046] Figure 32 is Figure 31 The sealing resin is shown with imaginary lines in the top view.

[0047] Figure 33 is Figure 32 The sealing resin and the second conductive member are omitted in the top view.

[0048] Figure 34is Figure 33 The first conductive component is omitted in the top view.

[0049] Figure 35 It is a bottom view showing the semiconductor device according to the first embodiment of the second aspect of the present disclosure.

[0050] Figure 36 It is along Figure 32 Cross-sectional view of line XXXVI-XXXVI.

[0051] Figure 37 It is magnified Figure 36 A partially enlarged cross-sectional view of a portion (near the first element).

[0052] Figure 38 It is magnified Figure 36 A partially enlarged cross-sectional view of a portion (near the second element).

[0053] Figure 39 It is along Figure 32 Cross-sectional view of line XXXIX-XXXIX.

[0054] Figure 40 It is along Figure 32 Cross-sectional view of the XL-XL line.

[0055] Figure 41 It is along Figure 32 Cross-sectional view of the XLI-XLI line.

[0056] Figure 42 It is along Figure 32 Cross-sectional view of line XLII-XLII.

[0057] Figure 43 It is along Figure 32 Cross-sectional view of line XLIII-XLIII.

[0058] Figure 44 It is magnified Figure 40 A partially enlarged cross-sectional view of a portion of .

[0059] Figure 45 This is a cross-sectional view showing one step of the method for manufacturing a semiconductor device according to the first embodiment of the second aspect of the present disclosure.

[0060] Figure 46 It is a plan view showing a semiconductor device according to a first modified example of the first embodiment of the second aspect.

[0061] Figure 47 It is along Figure 46 Cross-sectional view of line XLVII-XLVII.

[0062] Figure 48 It is along Figure 46 Cross-sectional view of line XLVIII-XLVIII.

[0063] Figure 49 A semiconductor device according to a second modification of the first embodiment of the second aspect is shown. Figure 40 Same cross-section view.

[0064] Figure 50 A semiconductor device according to a third modified example of the first embodiment of the second aspect is shown. Figure 47 Same cross-sectional view.

[0065] Figure 51 A semiconductor device according to a fourth modified example of the first embodiment of the second aspect is shown. Figure 40 Same cross-section view.

[0066] Figure 52 It is a plan view showing a semiconductor device according to a fifth modified example of the first embodiment of the second aspect.

[0067] Figure 53 It is along Figure 52 Cross-sectional view of line LIII-LIII. DETAILED DESCRIPTION

[0068] Hereinafter, the preferred embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. Figures 1 to 29 , a semiconductor device according to the first embodiment of the present disclosure is described. Then, referring to Figures 30 to 53 The semiconductor device according to the second embodiment of the present disclosure is described. Figures 1 to 29 The reference symbols used in (the first solution) are the same as those in Figures 30 to 53 The reference symbols used in the second embodiment are independent of each other. Therefore, for example, if the same reference symbol indicates different components in the first and second embodiments, different reference symbols may also indicate the same (or similar) components in the first and second embodiments.

[0069] The terms “first,” “second,” and “third” in the present disclosure are used only for identification and are not intended to necessarily indicate the order of these objects.

[0070] In the present disclosure, “something A is formed on thing B” and “something A is formed on thing B”, unless otherwise specified, include “something A is directly formed on thing B” and “something A is formed on thing B with something else interposed between thing A and thing B”. Similarly, “something A is arranged on thing B” and “something A is arranged on thing B”, unless otherwise specified, include “something A is directly arranged on thing B” and “something else is interposed between thing A and thing B and thing A is arranged on thing B”. Similarly, “something A is located on thing B”, unless otherwise specified, includes “something A is in contact with thing B and thing A is located on thing B” and “something A is located on thing B with something else interposed between thing A and thing B”. Furthermore, the phrase "objects A and B overlap when viewed in a certain direction" encompasses "objects A and B completely overlap" and "objects A and B partially overlap," unless otherwise specified. Furthermore, in the present disclosure, the phrase "surface A faces (to one side or the other side of) direction B" is not limited to the case where the angle of surface A relative to direction B is 90°, but includes the case where surface A is tilted relative to direction B.

[0071] First implementation method (first solution):

[0072] Figures 1 to 22 A semiconductor device according to a first embodiment of the first aspect of the present disclosure is shown. Semiconductor device A1 of this embodiment includes a plurality of first semiconductor elements 10A, a plurality of second semiconductor elements 10B, a support substrate 3, a first terminal 41, a second terminal 42, a plurality of third terminals 43, a fourth terminal 44, a plurality of control terminals 45, a control terminal support 48, a first conductive member 5, a second conductive member 6, and a sealing resin 8.

[0073] Figure 1 It is a perspective view showing the semiconductor device A1. Figure 2 、 Figure 3 It is a perspective view showing the main parts of the semiconductor device A1. Figure 4 It is a top view showing the semiconductor device A1. Figure 5 It is a plan view showing the main parts of the semiconductor device A1. Figure 6 It is a side view showing the main parts of the semiconductor device A1.

[0074] Figure 7 It is an enlarged plan view showing the main parts of the semiconductor device A1. Figure 8 、 Figure 9 It is a plan view showing the main parts of the semiconductor device A1. Figure 10 It is a side view showing the semiconductor device A1. Figure 11 It is a bottom view showing the semiconductor device A1. Figure 12 It is along Figure 5Cross-sectional view along line XII-XII. Figure 13 It is along Figure 5 Cross-sectional view along line XIII-XIII. Figure 14 、 Figure 15 It is an enlarged cross-sectional view showing a main part of the semiconductor device A1. Figure 16 It is magnified Figure 13 A partial enlarged view of a part of . Figure 17 It is magnified Figure 4 A partial enlarged view of a part of . Figure 18 It is along Figure 5 Cross-sectional view of line XVIII-XVIII. Figure 19 It is along Figure 5 Cross-sectional view of the XIX-XIX line. Figure 20 It is along Figure 5 Cross-sectional view of the XX-XX line. Figure 21 It is along Figure 5 Cross-sectional view of line XXI-XXI. Figure 22 It is along Figure 5 Cross-sectional view of line XXII-XXII.

[0075] For ease of explanation, three mutually orthogonal directions are defined as the x-direction, the y-direction, and the z-direction. The z-direction is an example of a thickness direction, and the x-direction is an example of a first direction. Furthermore, one side in the x-direction is referred to as the x1 side of the x-direction, and the other side in the x-direction is referred to as the x2 side of the x-direction. Furthermore, one side in the y-direction is referred to as the y1 side of the y-direction, and the other side in the y-direction is referred to as the y2 side of the y-direction. Furthermore, one side in the z-direction is referred to as the z1 side of the z-direction, and the other side in the z-direction is referred to as the z2 side of the z-direction.

[0076] The plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B are electronic components that serve as the functional core of the semiconductor device A1. The constituent materials of each first semiconductor element 10A and each second semiconductor element 10B are, for example, semiconductor materials based on SiC (silicon carbide). The semiconductor material is not limited to SiC, but may also be Si (silicon), GaN (gallium nitride) or C (diamond), etc. Each first semiconductor element 10A and each second semiconductor element 10B is, for example, a power semiconductor chip with a switching function such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). In this embodiment, the first semiconductor element 10A and the second semiconductor element 10B are shown as MOSFETs, but are not limited to this, and may also be other transistors such as IGBTs (Insulated Gate Bipolar Transistors). Each first semiconductor element 10A and each second semiconductor element 10B are the same element. Each of the first semiconductor elements 10A and each of the second semiconductor elements 10B is, for example, an n-channel MOSFET, but may also be a p-channel MOSFET.

[0077] like Figure 14 、 Figure 15 As shown, the first semiconductor element 10A and the second semiconductor element 10B each have an element principal surface 101 and an element rear surface 102. In each of the first semiconductor element 10A and the second semiconductor element 10B, the element principal surface 101 and the element rear surface 102 are spaced apart in the z-direction. The element principal surface 101 faces the z1 side in the z-direction, and the element rear surface 102 faces the z2 side in the z-direction.

[0078] In this embodiment, the semiconductor device A1 includes four first semiconductor elements 10A and four second semiconductor elements 10B, but the number of first semiconductor elements 10A and the number of second semiconductor elements 10B are not limited to this structure and can be appropriately changed according to the performance required of the semiconductor device A1. Figure 8 、 Figure 9 In the example, four first semiconductor elements 10A and four second semiconductor elements 10B are provided. The number of first semiconductor elements 10A and second semiconductor elements 10B can be two, three, or five or more. The number of first semiconductor elements 10A and the number of second semiconductor elements 10B can be equal or different. The number of first semiconductor elements 10A and second semiconductor elements 10B is determined by the current capacity handled by semiconductor device A1.

[0079] Semiconductor device A1 is configured, for example, as a half-bridge switching circuit. In this case, multiple first semiconductor elements 10A constitute the upper arm of semiconductor device A1, while multiple second semiconductor elements 10B constitute the lower arm. In the upper arm, multiple first semiconductor elements 10A are connected in parallel with one another. In the lower arm, first semiconductor elements 10A are connected in parallel with one another, while in the lower arm, multiple second semiconductor elements 10B are connected in parallel with one another. Each first semiconductor element 10A and each second semiconductor element 10B are connected in series to form a bridge layer.

[0080] like Figure 8 、 Figure 9 as well as Figure 21 As shown in FIG. 1 and FIG. 2 , a plurality of first semiconductor elements 10A are mounted on first conductive portions 32A of a support substrate 3 described later. Figure 8 、 Figure 9 In the example shown, multiple first semiconductor elements 10A are arranged, for example, in the y-direction and spaced apart from each other. Each first semiconductor element 10A is conductively bonded to the first conductive portion 32A via a conductive bonding material 19. When each first semiconductor element 10A is bonded to the first conductive portion 32A, the element back surface 102 faces the first conductive portion 32A. Furthermore, unlike this embodiment, the multiple first semiconductor elements 10A may be mounted on a metal component separate from a portion of a DBC substrate, etc. In this case, the metal component corresponds to the first conductive portion of the present disclosure. The metal component may also be supported by, for example, a DBC substrate, etc.

[0081] like Figure 8 、 Figure 9 as well as Figure 20 As shown in FIG. 1 and FIG. 2 , a plurality of second semiconductor elements 10B are mounted on the second conductive portion 32B of the support substrate 3 described later. Figure 8 、 Figure 9 In the example shown, a plurality of second semiconductor elements 10B are arranged in the y direction and are spaced apart from each other. Each second semiconductor element 10B is conductively bonded to the second conductive portion 32B via the conductive bonding material 19. When each second semiconductor element 10B is bonded to the second conductive portion 32B, the element back surface 102 faces the second conductive portion 32B. Figure 9 As can be understood, when viewed in the x-direction, the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B overlap, but they do not necessarily overlap. Furthermore, unlike the present embodiment, the plurality of second semiconductor elements 10B may be mounted on a metal component separate from a portion of the DBC substrate, etc. In this case, the metal component corresponds to the second conductive portion in this disclosure. The metal component may also be supported by, for example, the DBC substrate, etc.

[0082] Each of the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B includes a first main surface electrode 11, a second main surface electrode 12, a third main surface electrode 13, and a back surface electrode 15. The structures of the first main surface electrode 11, the second main surface electrode 12, the third main surface electrode 13, and the back surface electrode 15 described below are common to each of the first semiconductor elements 10A and the second semiconductor elements 10B. The first main surface electrode 11, the second main surface electrode 12, and the third main surface electrode 13 are provided on the element main surface 101. The first main surface electrode 11, the second main surface electrode 12, and the third main surface electrode 13 are insulated by an insulating film (not shown). The back surface electrode 15 is provided on the element back surface 102.

[0083] The first main surface electrode 11 is, for example, a gate electrode, and a driving signal (for example, a gate voltage) for driving the first semiconductor element 10A (the second semiconductor element 10B) is input. In the first semiconductor element 10A (the second semiconductor element 10B), the second main surface electrode 12 is, for example, a source electrode, and a source current flows. The second main surface electrode 12 of this embodiment has a gate finger 121. The gate finger 121 is, for example, composed of a linear insulator extending in the x-direction, and divides the second main surface electrode 12 into two parts in the y-direction. The third main surface electrode 13 is, for example, a source sensing electrode, and a source current flows. The back electrode 15 is, for example, a drain electrode, and a drain current flows. The back electrode 15 covers the entire area (or substantially the entire area) of the back surface 102 of the element. The back electrode 15 is, for example, formed by Ag (silver) plating.

[0084] If a driving signal (gate voltage) is input to the first main surface electrode 11 (gate electrode), each first semiconductor element 10A (each second semiconductor element 10B) switches between the on state and the off state according to the driving signal. In the on state, current flows from the back electrode 15 (drain electrode) to the second main surface electrode 12 (source electrode), and in the off state, the current does not flow. That is, each first semiconductor element 10A (each second semiconductor element 10B) performs a switching operation. The semiconductor device A1 utilizes the switching function of multiple first semiconductor elements 10A and multiple second semiconductor elements 10B to convert the DC voltage input between a fourth terminal 44 and the two first terminals 41 and the second terminal 42 into an AC voltage, for example, and outputs the AC voltage from the third terminal 43. Each of the above-mentioned multiple first semiconductor elements 10A is equivalent to the first switching element in the present disclosure. Each of the above-mentioned multiple second semiconductor elements 10B is equivalent to the second switching element in the present disclosure.

[0085] In the semiconductor device A1, as Figure 5 、 Figure 8 、 Figure 9As shown in FIG. 1 , the thermistor 17 is provided. The thermistor 17 is used as a temperature detection sensor. In addition, in addition to the thermistor 17, a structure including, for example, a temperature sensing diode may be provided, or a structure not including the thermistor 17 or the like may be provided.

[0086] The support substrate 3 supports the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B. The specific structure of the support substrate 3 is not limited in any way and may be, for example, a DBC (Direct Bonded Copper) substrate or an AMB (Active Metal Brazing) substrate. The support substrate 3 includes an insulating layer 31, a support conductor 32, and a back metal layer 33. The support conductor 32 includes a first conductive portion 32A and a second conductive portion 32B. The z-direction dimension of the support substrate 3 is, for example, not less than 0.4 mm and not more than 3.0 mm.

[0087] The insulating layer 31 is, for example, a ceramic with excellent thermal conductivity. Examples of such ceramics include SiN (silicon nitride). The insulating layer 31 is not limited to ceramics and may also be an insulating resin sheet, for example. The insulating layer 31 is, for example, rectangular in plan view. The dimension of the insulating layer 31 in the z-direction is, for example, not less than 0.05 mm and not more than 1.0 mm.

[0088] The first conductive portion 32A supports the plurality of first semiconductor elements 10A, and the second conductive portion 32B supports the plurality of second semiconductor elements 10B. The first conductive portion 32A and the second conductive portion 32B are formed on the upper surface of the insulating layer 31 (the surface facing the z1 side in the z direction). The constituent material of the first conductive portion 32A and the second conductive portion 32B includes, for example, Cu (copper). The constituent material may also include materials other than Cu (copper), such as Al (aluminum). The first conductive portion 32A and the second conductive portion 32B are spaced apart in the x direction. The first conductive portion 32A is located on the x1 side in the x direction relative to the second conductive portion 32B. The first conductive portion 32A and the second conductive portion 32B each have a rectangular shape, for example, when viewed from above. The first conductive portion 32A and the second conductive portion 32B, together with the first conductive component 5 and the second conductive component 6, form a path for the main circuit current switched by the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B.

[0089] The first conductive portion 32A has a first principal surface 301A. The first principal surface 301A is a plane facing the z1 side of the z direction. A plurality of first semiconductor elements 10A are bonded to the first principal surface 301A of the first conductive portion 32A via a conductive bonding material 19. The second conductive portion 32B has a second principal surface 301B. The second principal surface 301B is a plane facing the z1 side of the z direction. A plurality of second semiconductor elements 10B are bonded to the second principal surface 301B of the second conductive portion 32B via a conductive bonding material 19. The constituent material of the conductive bonding material 19 is not particularly limited, and examples thereof include solder, metal paste, or sintered metal. The dimensions of the first conductive portion 32A and the second conductive portion 32B in the z direction are, for example, not less than 0.1 mm and not more than 1.5 mm.

[0090] The back metal layer 33 is formed on the lower surface of the insulating layer 31 (the surface facing the z2 side in the z direction). The constituent material of the back metal layer 33 is the same as the constituent material of the supporting conductor 32. The back metal layer 33 has a back surface 302. The back surface 302 is a flat surface facing the z2 side in the z direction. Figure 11 In the example shown, the back surface 302 is exposed from the sealing resin 8. A heat dissipation component (e.g., a heat sink) (not shown) can be mounted on the back surface 302. Alternatively, the back surface 302 may be covered by the sealing resin 8 instead of being exposed from the sealing resin 8. The back metal layer 33 overlaps both the first conductive portion 32A and the second conductive portion 32B in a plan view.

[0091] The first terminal 41, the second terminal 42, the plurality of third terminals 43, and the fourth terminal 44 are each formed of a plate-shaped metal plate. The metal plate contains, for example, Cu (copper) or a Cu (copper) alloy. Figures 1 to 5 、 Figure 8 、 Figure 9 as well as Figure 11 In the illustrated example, the semiconductor device A1 includes one first terminal 41 , one second terminal 42 , one fourth terminal 44 , and two third terminals 43 , but the number of terminals is not limited at all.

[0092] A DC voltage, which is the target of power conversion, is input to the first terminal 41, the second terminal 42, and the fourth terminal 44. The fourth terminal 44 is the positive terminal (P terminal), while the first terminal 41 and the second terminal 42 are each the negative terminal (N terminal). The AC voltage converted by the first semiconductor element 10A and the second semiconductor element 10B is output from the plurality of third terminals 43. The first terminal 41, the second terminal 42, the plurality of third terminals 43, and the fourth terminal 44 each include a portion covered by the sealing resin 8 and a portion exposed from the sealing resin 8.

[0093] like Figure 13As shown, the fourth terminal 44 is conductively bonded to the first conductive portion 32A. The conductive bonding method is not limited in any way, and methods such as ultrasonic bonding, laser bonding, welding, or methods using solder, metal paste, silver sintered body, etc. can be appropriately used. Figure 8 、 Figure 9 As shown in FIG. 1 , the fourth terminal 44 is located on the x1 side in the x direction relative to the first semiconductor elements 10A and the first conductive portion 32A. The fourth terminal 44 is electrically connected to the first conductive portion 32A and is also electrically connected to the back surface electrode 15 (drain electrode) of each first semiconductor element 10A via the first conductive portion 32A.

[0094] The first terminal 41 and the second terminal 42 are electrically connected to the second conductive component 6. In the present embodiment, the first terminal 41 and the second conductive component 6 are formed integrally. The first terminal 41 and the second conductive component 6 are formed integrally, for example, by cutting and bending a single metal plate material, and do not include a structure such as a bonding material for bonding them to each other. In addition, in the present embodiment, the second terminal 42 and the second conductive component 6 are formed integrally. In addition, the first terminal 41 and the second terminal 42 may be structures that are electrically connected to the second conductive component 6, or may be structures that have bonding portions that bond them to each other, unlike the present embodiment. Figure 5 、 Figure 8 As shown in FIG. 1 , the first terminal 41 and the second terminal 42 are located on the x1 side in the x direction relative to the plurality of first semiconductor elements 10A and the first conductive portion 32A. The first terminal 41 and the second terminal 42 are each electrically connected to the second conductive member 6 and are electrically connected to the second main surface electrode 12 (source electrode) of each second semiconductor element 10B via the second conductive member 6.

[0095] like Figures 1 to 5 as well as Figure 11 As shown in FIG. 1 , first terminal 41, second terminal 42, and fourth terminal 44 each protrude from sealing resin 8 toward the x1 side in the x-direction in semiconductor device A1. First terminal 41, second terminal 42, and fourth terminal 44 are spaced apart from each other. First terminal 41 and second terminal 42 are located on opposite sides of fourth terminal 44 in the y-direction. First terminal 41 is located on the y1 side of fourth terminal 44 in the y-direction, and second terminal 42 is located on the y2 side of fourth terminal 44 in the y-direction. First terminal 41, second terminal 42, and fourth terminal 44 overlap when viewed in the y-direction.

[0096] As from Figure 8 、 Figure 9 as well as Figure 12As can be understood, the two third terminals 43 are respectively connected to the second conductive portion 32B. The method of connection is not limited in any way, and methods such as ultrasonic connection, laser connection, welding, or methods using solder, metal paste, silver sintered body, etc. can be appropriately used. Figure 8 As shown in FIG. 1 , two third terminals 43 are located on the x2 side of the second semiconductor elements 10B and the second conductive portion 32B in the x-direction. Each third terminal 43 is electrically connected to the second conductive portion 32B and, via the second conductive portion 32B, to the back surface electrode 15 (drain electrode) of each second semiconductor element 10B. The number of third terminals 43 is not limited to two; for example, one or three or more may be provided. For example, if there is only one third terminal 43, it is preferably connected to the center portion of the second conductive portion 32B in the y-direction.

[0097] The multiple control terminals 45 are pin-shaped terminals used to control the driving of each first semiconductor element 10A and each second semiconductor element 10B. Each of the multiple control terminals 45 is, for example, a crimp terminal. The multiple control terminals 45 include multiple first control terminals 46A to 46E and multiple second control terminals 47A to 47D. The multiple first control terminals 46A to 46E are used for controlling each first semiconductor element 10A, etc. The multiple second control terminals 47A to 47D are used for controlling each second semiconductor element 10B, etc.

[0098] like Figure 8 、 Figure 13 as well as Figure 22 As shown in FIG. 1 , a plurality of first control terminals 46A to 46E are arranged at intervals in the y direction. Each of the first control terminals 46A to 46E is supported by the first conductive portion 32A via a control terminal support 48 (a first support portion 48A described later). Figure 5 as well as Figure 8 As shown, each of the first control terminals 46A to 46E is located between the plurality of first semiconductor elements 10A and the first terminal 41 , the second terminal 42 , and the fourth terminal 44 in the x-direction.

[0099] The first control terminal 46A is a terminal (gate terminal) for inputting a drive signal to the plurality of first semiconductor elements 10A. A drive signal (eg, a gate voltage) for driving the plurality of first semiconductor elements 10A is input to the first control terminal 46A.

[0100] The first control terminal 46B is a terminal (source sense terminal) for detecting source signals of the plurality of first semiconductor elements 10A. The first control terminal 46B detects a voltage (voltage corresponding to a source current) applied to each second main surface electrode 12 (source electrode) of the plurality of first semiconductor elements 10A.

[0101] The first control terminal 46C and the first control terminal 46D are terminals electrically connected to the thermistor 17 .

[0102] The first control terminal 46E is a terminal (drain sense terminal) for detecting drain signals of the plurality of first semiconductor elements 10A. The first control terminal 46E detects the voltage (voltage corresponding to the drain current) applied to each back electrode 15 (drain electrode) of the plurality of first semiconductor elements 10A.

[0103] The plurality of second control terminals 47A to 47D are arranged at intervals in the y direction. Figure 8 as well as Figure 13 As shown in FIG. 1 and FIG. 2 , each of the second control terminals 47A to 47D is supported on the second conductive portion 32B via a control terminal support 48 (a second support portion 48B described later). Figure 5 as well as Figure 8 As shown, each of the second control terminals 47A to 47D is located between the plurality of second semiconductor elements 10B and the two third terminals 43 in the x-direction.

[0104] The second control terminal 47A is a terminal (gate terminal) for inputting drive signals to the plurality of second semiconductor elements 10B. A drive signal (e.g., a gate voltage) for driving the plurality of second semiconductor elements 10B is input to the second control terminal 47A. The second control terminal 47B is a terminal (source sense terminal) for detecting source signals from the plurality of second semiconductor elements 10B. The voltage (voltage corresponding to the source current) applied from the second control terminal 47B to each second main surface electrode 12 (source electrode) of the plurality of second semiconductor elements 10B is detected. The second control terminal 47C and the second control terminal 47D are terminals that are electrically connected to the thermistor 17.

[0105] Each of the plurality of control terminals 45 (the plurality of first control terminals 46A to 46E and the plurality of second control terminals 47A to 47D) includes a bracket 451 and a metal pin 452 .

[0106] The bracket 451 is made of conductive material. Figure 14 、 Figure 15 As shown, the bracket 451 is bonded to the control terminal support 48 (the first metal layer 482 described later) via the conductive bonding material 459. Figure 16 As shown, the bracket 451 includes a cylindrical portion 453 , a first flange portion 454 and a second flange portion 455 .

[0107] The cylindrical portion 453 extends in the z-direction and is, for example, cylindrical. The cylindrical portion 453 has a first outer side surface 453a and a first inner side surface 453b. The first outer side surface 453a faces radially outward of the cylindrical portion 453 when viewed in the z-direction and extends in the z-direction. The first inner side surface 453b faces the opposite side of the first outer side surface 453a, faces radially inward of the cylindrical portion 453 when viewed in the z-direction, and extends in the z-direction.

[0108] The first flange portion 454 is connected to the end portion of the cylindrical portion 453 on the z1 side in the z direction. The first flange portion 454 has a first surface 454a and a second surface 454b. The first surface 454a is the surface facing the z1 side in the z direction. The first surface 454a is located at the end portion on the z1 side in the z direction on the bracket 451. When viewed in the z direction, the first surface 454a is annular (circular or rectangular). The second surface 454b is located on the z2 side of the z direction relative to the first surface 454a and faces the z2 side in the z direction.

[0109] The second flange portion 455 is connected to the end portion on the z2 side in the z direction of the cylindrical portion 453. In this embodiment, the second flange portion 455 is bonded to the control terminal support 48 (a first metal layer 482 described later) via a conductive bonding material 459.

[0110] A metal pin 452 is inserted through at least the first flange portion 454 and the cylindrical portion 453 of the bracket 451. A portion of the bracket 451 is covered with the sealing resin 8. At least the first outer side surface 453a (the cylindrical portion 453) is in contact with the sealing resin 8. Figure 16 In the illustrated example, the entire first outer side surface 453 a of the cylindrical portion 453 and the second surface 454 b of the first flange portion 454 are in contact with the sealing resin 8 .

[0111] The metal pin 452 is a rod-shaped member extending in the z direction. The metal pin 452 is supported by being pressed into the bracket 451. The metal pin 452 is electrically connected to the control terminal support 48 (the first metal layer 482 described later) via at least the bracket 451. Figures 14 to 16 In the example shown, the metal pin 452 is not inserted into the lower end of the bracket 451 (the end on the z2 side in the z-direction), and the lower end of the metal pin 452 is separated from the conductive bonding material 459. In this case, the metal pin 452 is electrically connected to the control terminal support 48 (first metal layer 482) via the bracket 451. Unlike the example shown in the figure, when the lower end of the metal pin 452 (the end on the z2 side in the z-direction) contacts the conductive bonding material 459 within the insertion hole of the bracket 451, the metal pin 452 is electrically connected to the control terminal support 48 via the conductive bonding material 459. The metal pin 452 protrudes further toward the z1 side in the z-direction than the upper surface of the sealing resin 8 (resin main surface 81 described later).

[0112] The control terminal support body 48 supports the plurality of control terminals 45. The control terminal support body 48 is interposed between the first and second principal surfaces 301A and 301B and the plurality of control terminals 45 in the z direction.

[0113] The control terminal support body 48 includes a first support portion 48A and a second support portion 48B. The first support portion 48A is disposed on the first conductive portion 32A and supports a plurality of first control terminals 46A to 46E among the plurality of control terminals 45. Figure 14 As shown, the first support portion 48A is bonded to the first conductive portion 32A via a bonding material 49. The bonding material 49 can be conductive or insulating, for example, solder. The second support portion 48B is disposed on the second conductive portion 32B and supports a plurality of second control terminals 47A to 47D among the plurality of control terminals 45. Figure 15 As shown, the second supporting portion 48B is bonded to the second conductive portion 32B via a bonding material 49 .

[0114] The control terminal support body 48 (each of the first support portion 48A and the second support portion 48B) is formed of, for example, a DBC (Direct Bonded Copper) substrate and includes an insulating layer 481 , a first metal layer 482 , and a second metal layer 483 stacked on top of each other.

[0115] The insulating layer 481 is made of, for example, ceramics and has, for example, a rectangular shape in a plan view.

[0116] like Figure 14 、 Figure 15 As shown in FIG. 4 , the first metal layer 482 is formed on the upper surface of the insulating layer 481. Each control terminal 45 is vertically arranged on the first metal layer 482. The first metal layer 482 includes, for example, Cu (copper) or a Cu (copper) alloy. Figure 8 As shown in FIG. 4 , first metal layer 482 includes a first portion 482A, a second portion 482B, a third portion 482C, a fourth portion 482D, a fifth portion 482E, and a sixth portion 482F. First portion 482A, second portion 482B, third portion 482C, fourth portion 482D, fifth portion 482E, and sixth portion 482F are spaced apart and insulated from one another.

[0117] The first portion 482A is connected to a plurality of metal wires 71, and is electrically connected to the first main surface electrode 11 (gate electrode) of each first semiconductor element 10A (each second semiconductor element 10B) via each metal wire 71. The first portion 482A and the sixth portion 482F are connected to a plurality of metal wires 73. Thus, the sixth portion 482F is electrically connected to the first main surface electrode 11 (gate electrode) of each first semiconductor element 10A (each second semiconductor element 10B) via the metal wires 73 and the metal wires 71. Figure 8 As shown, the first control terminal 46A is joined to the sixth portion 482F of the first support portion 48A, and the second control terminal 47A is joined to the sixth portion 482F of the second support portion 48B.

[0118] The second portion 482B is connected to a plurality of metal wires 72 and is electrically connected to the third main surface electrode 13 (source sensing electrode) of each first semiconductor element 10A (each second semiconductor element 10B) via each metal wire 72. Figure 8 As shown, the first control terminal 46B is joined to the second portion 482B of the first support portion 48A, and the second control terminal 47B is joined to the second portion 482B of the second support portion 48B.

[0119] The third portion 482C and the fourth portion 482D are for thermistor 17 to be joined. Figure 8 As shown, the first control terminals 46C and 46D are joined to the third portion 482C and the fourth portion 482D of the first support portion 48A, and the second control terminals 47C and 47D are joined to the third portion 482C and the fourth portion 482D of the second support portion 48B.

[0120] The fifth portion 482E of the first support portion 48A is connected to the metal wire 74 and is electrically connected to the first conductive portion 32A via the metal wire 74. Figure 8 As shown, the first control terminal 46E is bonded to the fifth portion 482E of the first support portion 48A. The fifth portion 482E of the second support portion 48B is not electrically connected to any other components. The metal wires 71-74 described above are, for example, bonding wires. The material of each metal wire 71-74 includes, for example, Au (gold), Al (aluminum), or Cu (copper).

[0121] like Figure 14 、 Figure 15 As shown in FIG. 4 , the second metal layer 483 is formed on the lower surface of the insulating layer 481. Figure 14 As shown, the second metal layer 483 of the first support portion 48A is bonded to the first conductive portion 32A via the bonding material 49. Figure 15 As shown, the second metal layer 483 of the second support portion 48B is bonded to the second conductive portion 32B via the bonding material 49 .

[0122] The first conductive component 5 and the second conductive component 6, together with the first conductive portion 32A and the second conductive portion 32B, form a path for the main circuit current switched by the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B. The first conductive component 5 and the second conductive component 6 are spaced apart from the first principal surface 301A and the second principal surface 301B toward the z1 side in the z direction and overlap with the first principal surface 301A and the second principal surface 301B when viewed from above. In this embodiment, the first conductive component 5 and the second conductive component 6 are each formed of a metal plate. This metal includes, for example, Cu (copper) or Cu (copper). Specifically, the first conductive component 5 and the second conductive component 6 are appropriately bent metal plates.

[0123] The first conductive component 5 is connected to the second main surface electrode 12 (source electrode) of each first semiconductor element 10A and the second conductive portion 32B, so that the second main surface electrode 12 of each first semiconductor element 10A and the second conductive portion 32B are electrically connected. The first conductive component 5 constitutes a path for the main circuit current switched by the plurality of first semiconductor elements 10A. Figure 7 as well as Figure 8 As shown, the first conductive component 5 includes a main portion 51 , a plurality of first bonding portions 52 , and a plurality of second bonding portions 53 .

[0124] The main portion 51 is located between the plurality of first semiconductor elements 10A and the second conductive portion 32B in the x-direction and is a strip-shaped portion extending in the y-direction when viewed from above. The main portion 51 overlaps both the first conductive portion 32A and the second conductive portion 32B when viewed from above and is spaced apart from the first main surface 301A and the second main surface 301B toward the z1 side in the z-direction. Figure 18 As shown in FIG. 1 , the main portion 51 is located on the z2 side in the z direction relative to the third and fourth path portions 66 and 67 of the second conductive member 6 described later, and is closer to the first and second main surfaces 301A and 301B than the third and fourth path portions 66 and 67 .

[0125] In the present embodiment, the main portion 51 is arranged parallel to the first main surface 301A and the second main surface 301B.

[0126] like Figure 8 As shown in FIG. 1 and FIG. 2 , the main portion 51 extends continuously in the y direction corresponding to the region where the plurality of first semiconductor elements 10A are arranged. Figure 7 、 Figure 8 、 Figure 13As shown in FIG. 1 , a plurality of first openings 514 are formed in the main portion 51. Each of the plurality of first openings 514 is a through-hole extending in the z-direction (the thickness direction of the main portion 51), for example. The plurality of first openings 514 are arranged at intervals in the y-direction. The plurality of first openings 514 are provided corresponding to the plurality of first semiconductor elements 10A. In this embodiment, four first openings 514 are provided in the main portion 51, and the positions of these first openings 514 and the plurality of (four) first semiconductor elements 10A in the y-direction are equal.

[0127] In this embodiment, if Figure 8 、 Figure 13 As shown in FIG. 1 and FIG. 2 , each first opening 514 overlaps the gap between the first conductive portion 32A and the second conductive portion 32B in a plan view. The plurality of first openings 514 are formed to facilitate the flow of the resin material between the upper side (z1 side in the z direction) and the lower side (z2 side in the z direction) near the main portion 51 (first conductive member 5) when injecting a fluid resin material to form the sealing resin 8.

[0128] like Figure 8 As shown in FIG. 1 , a plurality of first bonding portions 52 and a plurality of second bonding portions 53 are respectively connected to the main portion 51 and are arranged corresponding to the plurality of first semiconductor elements 10A. Specifically, each first bonding portion 52 is located on the x1 side of the x direction relative to the main portion 51. Each second bonding portion 53 is located on the x2 side of the x direction relative to the main portion 51. Figure 14 As shown, each first bonding portion 52 is bonded to the second main surface electrode 12 of any corresponding first semiconductor element 10A via a conductive bonding material 59. Each second bonding portion 53 is bonded to the second conductive portion 32B via a conductive bonding material 59. The constituent material of the conductive bonding material 59 is not particularly limited, and may be, for example, solder, metal paste, or sintered metal. In this embodiment, the first bonding portion 52 has two portions spaced apart in the y direction. These two portions are bonded to the second main surface electrode 12 on both sides of the y direction via the gate finger 121 of the second main surface electrode 12 of the first semiconductor element 10A.

[0129] The second conductive member 6 electrically connects the second main surface electrode 12 (source electrode) of each second semiconductor element 10B to the first terminal 41 and the second terminal 42. The second conductive member 6 is formed integrally with the first terminal 41 and the second terminal 42. The second conductive member 6 forms a path for the main circuit current switched by the plurality of second semiconductor elements 10B. Figures 5 to 7 、 Figure 12 、 Figure 13 as well as Figures 18 to 22As shown, the second conductive member 6 includes a plurality of third joints 61, a first path 64, a second path 65, a plurality of third paths 66, and a fourth path 67. In the example shown, the second conductive member 6 includes a first step 602 and a second step 603.

[0130] The plurality of third bonding portions 61 are individually bonded to the plurality of second semiconductor elements 10B. Each third bonding portion 61 is bonded to the second main surface electrode 12 of each second semiconductor element 10B via a conductive bonding material 69. The material constituting the conductive bonding material 69 is not particularly limited; examples include solder, metal paste, or sintered metal. In this embodiment, the third bonding portion 61 has two flat portions 611 and two first inclined portions 612.

[0131] The two flat portions 611 are aligned in the y-direction. The two flat portions 611 are spaced apart in the y-direction. The shape of the flat portions 611 is not limited; in the illustrated example, they are rectangular. The two flat portions are bonded to the second main surface electrode 12 of the second semiconductor element 10B on both sides in the y-direction, sandwiching the gate fingers 121 of the second main surface electrode 12.

[0132] The two first inclined portions 612 are connected to the outer sides of the two flat portions 611 in the y direction. Specifically, the first inclined portion 612 located on the y1 side in the y direction is connected to the y1 side of the flat portion 611 located on the y1 side in the y direction. Furthermore, the first inclined portion 612 located on the y2 side in the y direction is connected to the y2 side of the flat portion 611 located on the y2 side in the y direction. The first inclined portion 612 is inclined so that the further away from the flat portion 611 in the y direction, the closer it is to the z1 side in the z direction.

[0133] The first path portion 64 is interposed between the plurality of third bonding portions 61 and the first terminal 41. In the illustrated example, the first path portion 64 is connected to the first terminal 41 via the first step portion 602. The first path portion 64 overlaps with the first conductive portion 32A in a plan view. The first path portion 64 is shaped to extend entirely in the x-direction.

[0134] The first path portion 64 includes a first strip portion 641 and a first extension portion 643. The first strip portion 641 is located on the X2 side of the x-direction relative to the first terminal 41 and is substantially parallel to the first main surface 301A. The first strip portion 641 is shaped to extend in the x-direction as a whole. In the example shown in the figure, the first strip portion 641 has a recess 649. The recess 649 is a portion of the first strip portion 641 that is recessed toward the y1 side of the y-direction. Figure 5 、 Figure 7 In the figure, the first conductive portion 32A is presented by the recess 649 .

[0135] The first extension 643 extends from the end of the first strip-shaped portion 641 on the y1 side in the y-direction toward the z2 side in the z-direction. The first extension 643 is spaced apart from the first conductive portion 32A. In the illustrated example, the first extension 643 is shaped along the z-direction, being an elongated rectangular shape with its length in the x-direction. Alternatively, the first path portion 64 may not include the first extension 643.

[0136] The second path portion 65 is interposed between the plurality of third bonding portions 61 and the second terminal 42. In the illustrated example, the second path portion 65 is connected to the second terminal 42 via the second step portion 603. The second path portion 65 overlaps with the first conductive portion 32A in a plan view. The second path portion 65 is shaped to extend entirely in the x-direction.

[0137] The second path portion 65 includes a second strip portion 651 and a second extension portion 653. The second strip portion 651 is located on the x2 side of the x direction relative to the second terminal 42 and is approximately parallel to the first main surface 301A. The second strip portion 651 is shaped to extend in the x direction as a whole. In the example shown in the figure, the second strip portion 651 has a recess 659. The recess 659 is a portion of the second strip portion 651 that is recessed toward the y2 side of the y direction. Figure 5 、 Figure 7 In the figure, the first conductive portion 32A is presented by the recess 659 .

[0138] The second extension 653 extends from the side end of the second strip-shaped portion 651 on the y2 side in the y-direction toward the z2 side in the z-direction. The second extension 653 is spaced apart from the first conductive portion 32A. Like the first extension 643, the second extension 653 has a shape extending along the z-direction, a long rectangular shape with its length in the x-direction. Alternatively, the second path portion 65 may not include the second extension 653.

[0139] Multiple third path portions 66 are individually connected to the multiple third bonding portions 61. Each third path portion 66 extends in the x-direction and is spaced apart from each other in the y-direction. The number of third path portions 66 is not limited; in the illustrated example, five third path portions 66 are provided. Each third path portion 66 is positioned between the multiple second semiconductor elements 10B in the y-direction or positioned outside the multiple second semiconductor elements 10B in the y-direction.

[0140] The two third path portions 66 located on the outer sides in the y direction are provided with recessed portions 669. The recessed portions 669 are recessed from the inner side to the outer side in the y direction. In the example shown in the figure, one recessed portion 669 is formed in each of the two third path portions 66. Figure 5 、 Figure 7 In the figure, the second conductive portion 32B is presented by these recesses 669 .

[0141] In this embodiment, a single third joining portion 61 is disposed between two third path portions 66 adjacent in the y direction. In one third joining portion 61, a first inclined portion 612 located on the y1 side in the y direction connects to the third path portion 66 located on the y1 side of the two third path portions 66 adjacent in the y direction. In one third joining portion 61, a first inclined portion 612 located on the y2 side in the y direction connects to the third path portion 66 located on the y2 side of the two third path portions 66 adjacent in the y direction.

[0142] The fourth path portion 67 is connected to the ends of the third path portions 66 on the x1 side in the x-direction. The fourth path portion 67 is elongated in the y-direction. It is connected to the ends of the first strip-shaped portion 641 of the first path portion 64 and the second strip-shaped portion 651 of the second path portion 65 on the x2 side in the x-direction. In the illustrated example, the end of the fourth path portion 67 on the y1 side in the y-direction is connected to the first path portion 64. Furthermore, the end of the fourth path portion 67 on the y2 side in the y-direction is connected to the second path portion 65.

[0143] The sealing resin 8 covers the plurality of first semiconductor elements 10A, the plurality of second semiconductor elements 10B, the support substrate 3 (excluding the back surface 302), portions of the first terminal 41, the second terminal 42, the plurality of third terminals 43, and the fourth terminal 44, portions of the plurality of control terminals 45, the control terminal support 48, the first conductive component 5, the second conductive component 6, and the plurality of metal wires 71 to 74. The sealing resin 8 is made of, for example, black epoxy resin. The sealing resin 8 is formed, for example, by molding. The dimensions of the sealing resin 8 in the x-direction are, for example, approximately 35 mm to 60 mm, in the y-direction, for example, approximately 35 mm to 50 mm, and in the z-direction, for example, approximately 4 mm to 15 mm. These dimensions represent the maximum dimensions along each direction. The sealing resin 8 has a resin main surface 81, a resin back surface 82, and a plurality of resin side surfaces 831 to 834.

[0144] like Figure 10 、 Figure 12 as well as Figure 20 As shown in FIG. 1 , the resin main surface 81 and the resin back surface 82 are spaced apart in the z direction. The resin main surface 81 faces the z1 side of the z direction, and the resin back surface 82 faces the z2 side of the z direction. A plurality of control terminals 45 (a plurality of first control terminals 46A to 46E and a plurality of second control terminals 47A to 47D) protrude from the resin main surface 81. Figure 11As shown, the resin back surface 82 is a frame-shaped structure that surrounds the back surface 302 of the support substrate 3 (the lower surface of the back metal layer 33) when viewed from above. The back surface 302 of the support substrate 3 is exposed from the resin back surface 82, and is, for example, flush with the resin back surface 82. The plurality of resin side surfaces 831 to 834 are connected to both the resin main surface 81 and the resin back surface 82, and are sandwiched between them in the z direction. Figure 4 As shown in FIG. 1 , the resin side surface 831 and the resin side surface 832 are spaced apart in the x direction. The resin side surface 831 faces the x2 side of the x direction, and the resin side surface 832 faces the x1 side of the x direction. The two third terminals 43 protrude from the resin side surface 831, and the first terminal 41, the second terminal 42, and the fourth terminal 44 protrude from the resin side surface 832. Figure 4 As shown in FIG. 8 , the resin side surface 833 and the resin side surface 834 are spaced apart in the y direction. The resin side surface 833 faces the y2 side in the y direction, and the resin side surface 834 faces the y1 side in the y direction.

[0145] In this embodiment, if Figure 1 、 Figure 4 、 Figure 13 、 Figure 22 As shown in FIG. 1 , a plurality of first recesses 810 are formed on the resin main surface 81 . The plurality of first recesses 810 are recessed toward the z2 side in the z direction from the resin main surface 81 . The plurality of first recesses 810 are provided corresponding to the plurality of control terminals 45 .

[0146] like Figure 16 、 Figure 17 As shown, the first recess 810 overlaps the entire cylindrical portion 453 of the bracket 451 when viewed from above. In the illustrated example, the first recess 810 has a recess inner side surface 811 and a recess bottom surface 812. The recess inner side surface 811 is connected to the resin main surface 81 and extends toward the z2 side in the z direction. In the illustrated example, the cross-section of the recess inner side surface 811 perpendicular to the z direction is circular. The recess bottom surface 812 is connected to the end of the recess inner side surface 811 on the z2 side in the z direction and is a flat surface facing the z1 side in the z direction.

[0147] The bottom surface 812 of the recess surrounds the first surface 454a of the bracket 451 (first flange portion 454) when viewed from above. In addition, the first surface 454a and the bottom surface 812 of the recess are the same planar shape. Such a first recess 810 is formed by, for example, pushing the upper end (first flange portion 454) of the bracket 451 by a pin or the like having a shape corresponding to the first recess 810 while forming a trace of the sealing resin 8 by molding. In this way, the first recess 810 is a trace of molding, and the same applies to the first recess 810 in each modified example described later. The first flange portion 454 is located on the z2 side of the z direction relative to the main surface 81 of the resin. As shown in FIG. Figure 16As shown, the first outer side surface 453a of the cylindrical portion 453 and the second surface 454b of the first flange portion 454 are all in contact with the sealing resin 8. On the other hand, the first inner side surface 453b of the cylindrical portion 453 and the first surface 454a of the first flange portion 454 are exposed from the sealing resin 8. Figure 16 、 Figure 17 In the example shown, the first recess 810 overlaps the entire first flange 454 when viewed from the z direction.

[0148] The first surface 454a, which is coplanar with the recessed bottom surface 812, is located at a different position in the z-direction than the resin main surface 81. Specifically, the first surface 454a is located on the z2 side of the resin main surface 81 in the z-direction. In this embodiment, the distance in the z-direction between the resin main surface 81 and the first surface 454a, i.e., the first dimension L1, is smaller than the length of the bracket 451 in the z-direction, i.e., the second dimension L2. Preferably, the ratio of the distance in the z-direction between the resin main surface 81 and the first surface 454a (first dimension L1) to the length of the bracket 451 in the z-direction (second dimension L2) is 1 / 3 or greater.

[0149] In addition, Figure 16 、 Figure 17 In the example shown, the inner side surface 811 of the recess is formed into a cylindrical shape, but a draft angle can also be provided during molding. When the inner side surface 811 of the recess is provided with a draft angle, the inner side surface 811 of the recess is formed into a conical shape that is inclined so that the inner diameter dimension decreases as it moves toward the z2 side in the z direction. The angle of the draft angle of the inner side surface 811 of the recess is appropriately set, for example, within the range of 0 to 30 degrees. In addition, when the inner side surface 811 of the recess is inclined in a conical shape, if the inclination angle is relatively large, the inner diameter dimension of the lower end of the inner side surface 811 of the recess (the end on the z2 side in the z direction) will be smaller than the outer diameter dimension of the first flange portion 454. In this case, the above-mentioned recess bottom surface 812 is not formed. The lower end of the inner side surface 811 of the recess is in contact with the first surface 454a, forming the end edge of the recess.

[0150] like Figure 4 As shown, multiple recesses 832a are formed on the resin side surface 832. Each recess 832a is a portion that is recessed in the x-direction when viewed from above. The multiple recesses 832a include a portion formed between the first terminal 41 and the fourth terminal 44, and a portion formed between the second terminal 42 and the fourth terminal 44, when viewed from above. The multiple recesses 832a are provided to increase the creepage distance between the first terminal 41 and the fourth terminal 44 along the resin side surface 832, as well as the creepage distance between the second terminal 42 and the fourth terminal 44 along the resin side surface 832.

[0151] like Figure 1 、 Figure 12 as well as Figure 13 As shown in FIG. 1 , the sealing resin 8 has a plurality of protrusions 851. Each of the protrusions 851 protrudes from the resin main surface 81 toward the z1 side in the z direction. When viewed from above, the protrusions 851 are arranged near the four corners of the sealing resin 8. A protruding end surface 851a is formed at the tip of each protrusion 851 (the end on the z1 side in the z direction). Each protruding end surface 851a of the plurality of protrusions 851 is parallel (or substantially parallel) to the resin main surface 81 and lies on the same plane (xy plane). Each protrusion 851 has, for example, a hollow-bottomed truncated cone shape. In equipment utilizing power generated by the semiconductor device A1, when the semiconductor device A1 is mounted on a control circuit board or the like included in the equipment, the plurality of protrusions 851 serve as spacers. Each of the plurality of protrusions 851 has a recessed portion 851b and an inner wall surface 851c formed within the recessed portion 851b. Each protrusion 851 can be cylindrical in shape, preferably cylindrical. The shape of the recessed portion 851b is cylindrical, and preferably, the inner wall surface 851c is a single perfect circle when viewed from above.

[0152] Semiconductor device A1 may be mechanically fixed to a control circuit board or the like using screws or other methods. In this case, internal threads can be formed on the inner wall surfaces 851c of the recesses 851b in the plurality of protrusions 851. Alternatively, embedded nuts may be embedded in the recesses 851b in the plurality of protrusions 851.

[0153] Next, the operation of this embodiment will be described.

[0154] The bracket 451 that constitutes each control terminal 45 has a first surface 454a and a first outer surface 453a. The first surface 454a is located at the end of the bracket 451 on the z1 side in the z-direction. The first surface 454a is located at a different position in the z-direction from the resin main surface 81. The first outer surface 453a extends in the z-direction and contacts the sealing resin 8. The metal pin 452 that constitutes each control terminal 45 protrudes further toward the z1 side in the z-direction than the resin main surface 81. With this structure, the multiple control terminals 45 are arranged in an area surrounded by the resin main surface 81 (sealing resin 8) when viewed from above. This semiconductor device A1 can achieve a smaller size when viewed from above. Furthermore, the first surface 454a is located at a different position in the z-direction from the resin main surface 81. With this structure, the creepage distance between adjacent control terminals 45 along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased. Therefore, the semiconductor device A1 is suitable for achieving a smaller size when viewed from above while also improving the withstand voltage of adjacent control terminals 45.

[0155] The bracket 451 includes a cylindrical portion 453 extending in the z direction, and a first flange portion 454 connected to the end of the cylindrical portion 453 on the z1 side in the z direction. The first flange portion 454 has a first surface 454a facing the z1 side in the z direction. The sealing resin 8 has a first recess 810. The first recess 810 is recessed from the resin main surface 81 toward the z1 side in the z direction. The first flange portion 454 is located on the z2 side in the z direction relative to the resin main surface 81. Due to the structure of the sealing resin 8 having the above-mentioned first recess 810, the first surface 454a (first flange portion 454) can be appropriately arranged at a position different from the resin main surface 81 in the z direction.

[0156] Furthermore, the first recess 810 overlaps the entire cylindrical portion 453 in a plan view (when viewed in the z direction). Therefore, when the metal pin 452 is press-fitted into the bracket 451, the lower end of the metal pin 452 can be inserted into the bracket 451 (cylindrical portion 453) while entering the first recess 810, thereby improving the workability during press-fitting.

[0157] The first recess 810 has a recess inner side surface 811 and a recess bottom surface 812. The recess bottom surface 812 faces the z1 side of the z direction and surrounds the first surface 454a when viewed in the z direction. In addition, the entire first surface 454a is exposed from the sealing resin 8. According to such a structure, the first surface 454a (first flange portion 454) surrounded by the recess bottom surface 812 has excellent visual recognition when viewed from above. As a result, the operability when pressing the metal pin 452 into the bracket 451 is further improved. In addition, according to the structure in which the recess bottom surface 812 of the first recess 810 surrounds the first surface 454a (first flange portion 454) when viewed from above, the surface distance along the surface of the sealing resin 8 can be further increased in the adjacent control terminals 45. This is more preferable in terms of improving the withstand voltage of the adjacent control terminals 45.

[0158] The distance (first dimension L1) between the resin main surface 81 and the first surface 454a in the z-direction is smaller than the length (second dimension L2) of the bracket 451 in the z-direction. The ratio of the distance (first dimension L1) between the resin main surface 81 and the first surface 454a in the z-direction to the length (second dimension L2) of the bracket 451 in the z-direction is, for example, 50% or greater. This structure prevents the encapsulating resin 8 from increasing in size in the z-direction and increases the creepage distance along the surface of the encapsulating resin 8 between adjacent control terminals 45.

[0159] First modification of the first embodiment (first solution):

[0160] Figure 23 A semiconductor device according to a first modified example of the first embodiment is shown. Figure 23This is an enlarged cross-sectional view of the main part of the semiconductor device A11 of this modification, which is similar to Figure 16 In addition, in Figures 23 to 29 In the drawings, the same or similar elements as those of the semiconductor device A1 of the above embodiment are marked with the same reference numerals as those of the above embodiment, and the description thereof is omitted as appropriate. Figures 23 to 29 The configurations of the various modifications and parts in the various embodiments can be appropriately combined with each other within a range that does not cause technical contradictions.

[0161] In the semiconductor device A11 of this variation, the structure of the first recess 810 is different from that of the semiconductor device A1 of the above-described embodiment. In the semiconductor device A11, the first recess 810 has a recess edge 813 and a cylindrical inner side surface 814. The cylindrical inner side surface 814 is cylindrical and extends from the resin main surface 81 toward the z2 side in the z direction. The recess edge 813 is located at the lower end of the cylindrical inner side surface 814 (the end on the z2 side in the z direction). The recess edge 813 is in contact with the first surface 454a. In this variation, the recess edge 813 is in contact with the radial middle position of the first surface 454a. A portion of the first surface 454a on the radial outside is covered by the sealing resin 8, and the remaining portion on the radial inside is exposed from the sealing resin 8. The outer peripheral edge of the first flange portion 454 surrounds the first recess 810 when viewed from above. Thus, the diameter (maximum value of the inner diameter) of the first recessed portion 810 is smaller than the outer diameter of the first flange portion 454. Figure 23 In the example shown, the cylindrical inner surface 814 is formed in a cylindrical shape, but a draft may be provided on the cylindrical inner surface 814. When the draft is provided on the cylindrical inner surface 814, the cylindrical inner surface 814 is formed in a conical shape that is inclined so that the inner diameter decreases toward the z2 side in the z direction.

[0162] In the semiconductor device A11 of this modified example, the bracket 451 that constitutes each control terminal 45 has a first surface 454a and a first outer side surface 453a. The first surface 454a is located at the end of the bracket 451 on the z1 side in the z direction. The first surface 454a is located at a different position in the z direction from the resin main surface 81. The first outer side surface 453a extends in the z direction and contacts the sealing resin 8. The metal pin 452 that constitutes each control terminal 45 protrudes further toward the z1 side in the z direction than the resin main surface 81. With this structure, the multiple control terminals 45 are arranged in an area surrounded by the resin main surface 81 (sealing resin 8) when viewed from above. This semiconductor device A11 can be miniaturized when viewed from above. In addition, the first surface 454a is located at a different position in the z direction from the resin main surface 81. With this structure, the creepage distance along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased between adjacent control terminals 45. Therefore, the semiconductor device A11 is suitable for achieving a reduction in size in a plan view while improving the withstand voltage of the adjacent control terminal 45. Otherwise, within the same structural range as the semiconductor device A1 of the above embodiment, the same operational effects as those of the above embodiment are achieved.

[0163] Second modification of the first embodiment (first solution):

[0164] Figure 24 A semiconductor device according to a second modified example of the first embodiment is shown. Figure 24 The enlarged cross-sectional view of the main part of the semiconductor device A12 of this modification is similar to the Figure 16 The semiconductor device A12 of this modification example differs from the semiconductor device A1 of the above embodiment in the structure of the first recess 810 .

[0165] The first recess 810 has a recess edge 813, a cylindrical inner side surface 814, and a tapered inner side surface 815. The cylindrical inner side surface 814 is cylindrical and extends from the resin main surface 81 to the z2 side in the z direction. The tapered inner side surface 815 is connected to the lower end (the end on the z2 side in the z direction) of the cylindrical inner side surface 814. The recess edge 813 is located at the lower end (the end on the z2 side in the z direction) of the tapered inner side surface 815. The tapered inner side surface 815 is inclined so that the inner diameter dimension increases as it moves toward the z1 side in the z direction. The recess edge 813 is in contact with the first surface 454a. In this modified example, the recess edge 813 is in contact with the radial middle position of the first surface 454a. A portion of the first surface 454a on the radial outside is covered by the sealing resin 8, and the remaining portion on the radial inside is exposed from the sealing resin 8. The outer peripheral edge of the first flange portion 454 surrounds the first recessed portion 810 in a plan view.

[0166] In the semiconductor device A12 of this modified example, the bracket 451 that constitutes each control terminal 45 has a first surface 454a and a first outer side surface 453a. The first surface 454a is located at the end of the bracket 451 on the z1 side in the z direction. The first surface 454a is located at a different position in the z direction from the resin main surface 81. The first outer side surface 453a extends in the z direction and contacts the sealing resin 8. The metal pin 452 that constitutes each control terminal 45 protrudes further toward the z1 side in the z direction than the resin main surface 81. With this structure, the multiple control terminals 45 are arranged in an area surrounded by the resin main surface 81 (sealing resin 8) when viewed from above. This semiconductor device A12 can be miniaturized when viewed from above. In addition, the first surface 454a is located at a different position in the z direction from the resin main surface 81. With this structure, the creepage distance along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased between adjacent control terminals 45. Therefore, the semiconductor device A12 is suitable for achieving miniaturization in a plan view while improving the withstand voltage of the adjacent control terminal 45.

[0167] In the first recess 810, the recess edge 813 located on the z2 side in the z-direction contacts the first surface 454a of the first flange 454. Furthermore, the first recess 810 has a tapered inner side surface 815 connected to the recess edge 813. The inner diameter of the tapered inner side surface 815 increases as it approaches the z1 side in the z-direction. With this structure, when the metal pin 452 is pressed into the bracket 451, the metal pin 452 entering the first recess 810 can be guided by the tapered inner side surface 815 while being directed toward the bracket 451 (cylindrical portion 453). This improves the workability when pressing the metal pin 452 into the bracket 451. Furthermore, within the same structure as the semiconductor device A1 of the above-described embodiment, the same functions and effects as those of the above-described embodiment are achieved.

[0168] Third modification of the first embodiment (first solution):

[0169] Figure 25 A semiconductor device according to a third modified example of the first embodiment is shown. Figure 25 This is an enlarged cross-sectional view of the main part of the semiconductor device A13 of this modification example. Figure 16 The semiconductor device A13 of this modification example is different from the semiconductor device A1 of the above embodiment in the structure of the first recess 810 .

[0170] The first recess 810 has a recess end edge 813, a cylindrical inner side surface 814, and a tapered inner side surface 815. In this modification, the longitudinal cross-sectional shape of the cylindrical inner side surface 814 and the tapered inner side surface 815 is the same as that of the first recess 810. Figure 24The semiconductor device A12 shown in FIG. Meanwhile, in this variation, the recessed portion edge 813 abuts the radially inner end of the first surface 454a. As a result, the entirety (or substantially the entirety) of the first surface 454a is covered with the sealing resin 8. The outer periphery of the first flange 454 surrounds the first recessed portion 810 in a plan view.

[0171] In the semiconductor device A13 of this modified example, the bracket 451 that constitutes each control terminal 45 has a first surface 454a and a first outer side surface 453a. The first surface 454a is located at the end of the bracket 451 on the z1 side in the z direction. The first surface 454a is located at a different position in the z direction from the resin main surface 81. The first outer side surface 453a extends in the z direction and contacts the sealing resin 8. The metal pin 452 that constitutes each control terminal 45 protrudes further toward the z1 side in the z direction than the resin main surface 81. With this structure, the multiple control terminals 45 are arranged in an area surrounded by the resin main surface 81 (sealing resin 8) when viewed from above. This semiconductor device A13 can be miniaturized when viewed from above. In addition, the first surface 454a is located at a different position in the z direction from the resin main surface 81. With this structure, the creepage distance along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased between adjacent control terminals 45. Therefore, the semiconductor device A13 is suitable for achieving miniaturization in a plan view while improving the withstand voltage of the adjacent control terminal 45.

[0172] In the first recess 810, the recess edge 813 located on the z2 side in the z-direction contacts the first surface 454a of the first flange 454. The first recess 810 has a tapered inner surface 815 connected to the recess edge 813. The inner diameter of the tapered inner surface 815 increases as it approaches the z1 side in the z-direction. With this structure, when the metal pin 452 is pressed into the bracket 451, the metal pin 452 entering the first recess 810 is guided by the tapered inner surface 815 toward the bracket 451 (cylindrical portion 453). Furthermore, in this modified example, the recess edge 813 contacts the radially inner end of the first surface 454a. As a result, when the metal pin 452 is pressed into the bracket 451, the metal pin 452 entering the first recess 810 is reliably directed toward the bracket 451 (cylindrical portion 453). This further improves the workability of pressing the metal pin 452 into the bracket 451. Other than this, within the scope of the same structure as the semiconductor device A1 of the above embodiment, the same functions and effects as those of the above embodiment are achieved.

[0173] Fourth Modification of the First Embodiment (First Option):

[0174] Figure 26 A semiconductor device according to a fourth modified example of the first embodiment is shown. Figure 26This is an enlarged cross-sectional view of the main part of the semiconductor device A14 of this modification example. Figure 16 The semiconductor device A14 of this modification example differs from the semiconductor device A1 of the above embodiment in the structure of the first recess 810 .

[0175] The first recess 810 has a recess inner side surface 811 and a recess bottom surface 812. Figure 26 In the example shown, the inner side surface 811 of the recess is formed into a conical shape that is inclined in such a manner that the inner diameter becomes smaller as it moves toward the z2 side in the z direction. The bottom surface 812 of the recess is connected to the end of the z2 side of the inner side surface 811 of the recess in the z direction, and is a plane facing the z1 side in the z direction. The bottom surface 812 of the recess surrounds the first surface 454a of the bracket 451 (first flange portion 454) when viewed from above. In this modified example, the bottom surface 812 of the recess is located on the z2 side in the z direction relative to the first surface 454a. Therefore, the first surface 454a and the bottom surface 812 of the recess are not the same surface, and the positions in the z direction are different. In addition, in Figure 26 In the illustrated example, the outer peripheral edge of the first flange portion 454 is exposed from the sealing resin 8 .

[0176] In the semiconductor device A14 of this modified example, the bracket 451 that constitutes each control terminal 45 has a first surface 454a and a first outer side surface 453a. The first surface 454a is located at the end of the bracket 451 on the z1 side in the z direction. The first surface 454a is located at a different position in the z direction from the resin main surface 81. The first outer side surface 453a extends in the z direction and contacts the sealing resin 8. The metal pin 452 that constitutes each control terminal 45 protrudes further toward the z1 side in the z direction than the resin main surface 81. With this structure, the multiple control terminals 45 are arranged in an area surrounded by the resin main surface 81 (sealing resin 8) when viewed from above. This semiconductor device A14 can be miniaturized when viewed from above. In addition, the first surface 454a is located at a different position in the z direction from the resin main surface 81. With this structure, the creepage distance along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased between adjacent control terminals 45. Therefore, the semiconductor device A14 is suitable for achieving a reduction in size in a plan view while improving the withstand voltage of the adjacent control terminal 45. Otherwise, within the same structure as the semiconductor device A1 of the above embodiment, the same operational effects as those of the above embodiment are achieved.

[0177] Fifth modification of the first embodiment (first embodiment):

[0178] Figure 27 A semiconductor device according to a fifth modified example of the first embodiment is shown. Figure 27 This is an enlarged cross-sectional view of the main part of the semiconductor device A15 of this modification example. Figure 16The semiconductor device A15 of this modification further includes a first resin-filled portion 89 .

[0179] In this variation, the first resin filling portion 89 fills the first recess 810 by burying it. The first resin filling portion 89 is made of, for example, epoxy resin, similar to the sealing resin 8, but may also be made of a material different from the sealing resin 8. According to this variation, foreign matter (including moisture) can be prevented from entering the first recess 810 exposed from the sealing resin 8. The semiconductor device A15 having the above-described structure is preferred in terms of improved durability and reliability. In addition, the semiconductor device A15 also achieves the same functions and effects as the semiconductor device A1 of the above-described embodiment.

[0180] Second implementation method (first solution):

[0181] Figure 28 as well as Figure 29 A semiconductor device according to a second embodiment of the present disclosure is shown. Figure 28 It is a perspective view showing the semiconductor device A2 according to this embodiment. Figure 29 is an enlarged cross-sectional view showing the main part of the semiconductor device A2. Figure 16 In the semiconductor device A2 of the present embodiment, the sealing resin 8 does not have the first recess 810 described above. On the other hand, the semiconductor device A2 has a plurality of first protrusions 852 .

[0182] The plurality of first protrusions 852 protrude from the resin main surface 81 toward the z1 side in the z direction. The plurality of protrusions 851 are respectively provided corresponding to the plurality of control terminals 45 and overlap with the plurality of control terminals 45 when viewed from above. The metal pins 452 of the plurality of control terminals 45 protrude from the first protrusion 852. The first protrusion 852 is cylindrical. The first protrusion 852 covers a portion of the bracket 451 in each control terminal 45. Figure 29 As shown, the entire first outer side surface 453a of the cylindrical portion 453 and the entire second surface 454b of the first flange portion 454 of the bracket 451 are in contact with the sealing resin 8. Specifically, a portion of the first outer side surface 453a and the entire second surface 454b are in contact with the first protrusion 852. On the other hand, the first surface 454a of the first flange portion 454 is exposed from the sealing resin 8.

[0183] The first protrusion 852 has a protrusion top surface 852a. When viewed from above, the protrusion top surface 852a surrounds the first surface 454a of the bracket 451 (first flange 454). Furthermore, the first surface 454a and the protrusion top surface 852a are coplanar. The protrusion top surface 852a and the coplanar first surface 454a are located at different positions in the z-direction from the resin main surface 81. Specifically, the first surface 454a is located on the z1 side of the resin main surface 81 in the z-direction.

[0184] Next, the operation of this embodiment will be described.

[0185] In the semiconductor device A2 of this modified example, the bracket 451 that constitutes each control terminal 45 has a first surface 454a and a first outer side surface 453a. The first surface 454a is located at the end of the bracket 451 on the z1 side in the z direction. The first surface 454a is located at a different position in the z direction from the resin main surface 81. The first outer side surface 453a extends in the z direction and contacts the sealing resin 8. The metal pin 452 that constitutes each control terminal 45 protrudes further toward the z1 side in the z direction than the resin main surface 81. With this structure, the multiple control terminals 45 are arranged in an area surrounded by the resin main surface 81 (sealing resin 8) when viewed from above. This semiconductor device A2 can be miniaturized when viewed from above. In addition, the first surface 454a is located at a different position in the z direction from the resin main surface 81. With this structure, the creepage distance along the surface of the sealing resin 8 (resin main surface 81, etc.) can be increased between adjacent control terminals 45. Therefore, the semiconductor device A2 is suitable for achieving miniaturization in a plan view while improving the withstand voltage of the adjacent control terminal 45 .

[0186] The sealing resin 8 includes a first protrusion 852. The first protrusion 852 protrudes from the resin main surface 81 toward the z1 side in the z direction. The first flange 454 is located toward the z1 side in the z direction relative to the resin main surface 81. Due to the configuration of the sealing resin 8 including the first protrusion 852, the first surface 454a (first flange 454) can be appropriately positioned at a different position from the resin main surface 81 in the z direction.

[0187] The semiconductor device according to the first aspect of the present disclosure is not limited to the above-described embodiment, and the specific structure of each part of the semiconductor device can be freely modified in various designs.

[0188] The first aspect of the present disclosure includes the embodiments described in the following Supplementary Notes 1 to 16.

[0189] Note 1.

[0190] A semiconductor device comprising:

[0191] at least one terminal including a conductive cylindrical bracket and a metal pin inserted into the bracket;

[0192] a terminal support body supporting the bracket; and

[0193] a sealing resin covering a portion of the bracket and the terminal support,

[0194] The sealing resin has a resin main surface facing one side in the thickness direction.

[0195] The bracket has a first surface located at one end in the thickness direction and a first outer surface extending in the thickness direction.

[0196] The first surface is located at a different position from the resin main surface in the thickness direction.

[0197] The first outer surface is in contact with the sealing resin.

[0198] The metal pin protrudes further toward one side in the thickness direction than the resin main surface.

[0199] Note 2.

[0200] According to the semiconductor device described in Supplementary Note 1,

[0201] The bracket includes a cylindrical portion extending in the thickness direction and a first flange portion connected to an end portion of the cylindrical portion on one side in the thickness direction.

[0202] The first flange portion includes the first surface facing one side in the thickness direction, and a second surface located closer to the other side in the thickness direction than the first surface and facing the other side in the thickness direction.

[0203] The cylindrical portion has the first outer side surface.

[0204] The entire first outer surface and the second surface are in contact with the sealing resin.

[0205] Note 3.

[0206] According to the semiconductor device described in Supplementary Note 2,

[0207] The sealing resin has a first recessed portion that is recessed from the resin main surface toward the other side in the thickness direction.

[0208] The first flange portion is located on the other side of the resin main surface in the thickness direction.

[0209] The first recessed portion overlaps the entirety of the cylindrical portion when viewed in the thickness direction.

[0210] Note 4.

[0211] According to the semiconductor device described in Supplementary Note 3,

[0212] At least a portion of the first surface is exposed from the sealing resin.

[0213] Note 5.

[0214] According to the semiconductor device described in Supplementary Note 4,

[0215] The entire first surface is exposed from the sealing resin.

[0216] The first recess has an inner side surface connected to the resin main surface, and a bottom surface connected to the end of the inner side surface of the recess on the other side in the thickness direction and facing one side in the thickness direction.

[0217] The bottom surface of the recess surrounds the first surface when viewed in the thickness direction.

[0218] Note 6.

[0219] According to the semiconductor device described in Supplementary Note 3,

[0220] The first recess has a recess end edge that is located on the other side in the thickness direction and is in contact with the first surface.

[0221] Note 7.

[0222] According to the semiconductor device described in Supplementary Note 6,

[0223] The first recess has a tapered inner side surface connected to the end edge of the recess.

[0224] The tapered inner surface is inclined so that the inner diameter thereof increases toward one side in the thickness direction.

[0225] Note 8.

[0226] According to the semiconductor device described in Supplementary Note 6,

[0227] The outer peripheral edge of the first flange portion surrounds the first recessed portion when viewed in the thickness direction.

[0228] Note 9.

[0229] The semiconductor device according to any one of Supplementary Notes 3 to 8,

[0230] A first dimension, which is a distance between the resin main surface and the first surface in the thickness direction, is smaller than a second dimension, which is a length of the bracket in the thickness direction.

[0231] Note 10.

[0232] According to the semiconductor device described in Supplementary Note 9,

[0233] The ratio of the first size to the second size is 1 / 3 or more.

[0234] Note 11.

[0235] According to the semiconductor device described in Supplementary Note 3,

[0236] The invention further includes a first resin filling portion that is filled in the first recess.

[0237] Note 12.

[0238] According to the semiconductor device described in Supplementary Note 2,

[0239] The sealing resin includes a first protrusion that protrudes from the resin main surface toward one side in the thickness direction.

[0240] A portion of the first outer surface and the entire second surface are in contact with the first protrusion.

[0241] Note 13.

[0242] According to the semiconductor device described in Supplementary Note 12,

[0243] The first protrusion has a protrusion top surface facing one side in the thickness direction.

[0244] The top surface of the protrusion surrounds the first surface when viewed in the thickness direction.

[0245] The first surface and the top surface of the protrusion are flush with each other.

[0246] Note 14.

[0247] The semiconductor device according to Supplementary Note 1 or 2, further comprising:

[0248] a supporting conductor that supports the terminal support body; and

[0249] at least one semiconductor element electrically connected to the at least one terminal,

[0250] The at least one semiconductor element is supported by the supporting conductor.

[0251] Note 15.

[0252] According to the semiconductor device described in Supplementary Note 14,

[0253] The at least one terminal is a control terminal for controlling the at least one semiconductor element.

[0254] Note 16.

[0255] According to the semiconductor device described in Supplementary Note 15,

[0256] The support conductor includes a first conductive portion and a second conductive portion, the first conductive portion and the second conductive portion being spaced apart in a first direction perpendicular to the thickness direction.

[0257] The at least one semiconductor element includes a first switching element connected to the first conductive portion and a second switching element connected to the second conductive portion.

[0258] The control terminal includes a first control terminal for controlling the first switching element and a second control terminal for controlling the second switching element.

[0259] The terminal support body includes a first support portion supporting the first control terminal and a second support portion supporting the second control terminal.

[0260] Next, refer to Figures 30 to 44 A semiconductor device according to the first embodiment of the second aspect of the present disclosure will now be described. Semiconductor device B1 of this embodiment includes a supporting substrate 11, multiple power terminals 13, multiple semiconductor elements 21, a thermistor 22, a first conductive component 31, a second conductive component 32, multiple metal wires, multiple control terminals 45, a control terminal support 48, and a sealing resin 50. The multiple power terminals 13 include a first power terminal 14, two second power terminals 15, and two third power terminals 16. The multiple metal wires include multiple first metal wires 41, multiple second metal wires 42, multiple third metal wires 43, and a fourth metal wire 44.

[0261] Figure 30 It is a perspective view showing the semiconductor device B1. Figure 31 It is a top view showing the semiconductor device B1. Figure 32 1 is a plan view showing the semiconductor device B1 , in which the sealing resin 50 is indicated by imaginary lines. Figure 33 is a top view showing the semiconductor device B1, which is Figure 32 The sealing resin 50 and the second conductive member 32 are omitted in the plan view. Figure 34 It is from Figure 33 The first conductive component 31 is omitted in the top view. Figure 35 It is a bottom view showing the semiconductor device B1. Figure 36 It is along Figure 32 Cross-sectional view of line XXXVI-XXXVI. Figure 37 、 Figure 38 It is magnified Figure 36 A partially enlarged cross-sectional view of a portion of . Figure 39 It is along Figure 32 Cross-sectional view of line XXXIX-XXXIX. Figure 40 It is along Figure 32 Cross-sectional view of the XL-XL line. Figure 41 It is along Figure 32 Cross-sectional view of the XLI-XLI line. Figure 42 It is along Figure 32 Cross-sectional view of line XLII-XLII. Figure 43 It is along Figure 32 Cross-sectional view of line XLIII-XLIII. Figure 44 It is magnified Figure 40 A partially enlarged cross-sectional view of a portion of .

[0262] In the following description, reference is made to the mutually orthogonal thickness direction z, the first direction x, and the second direction y. The thickness direction z corresponds to the thickness direction of the semiconductor device B1. Furthermore, "top view" refers to viewing along the thickness direction z. The first direction x is orthogonal to the thickness direction z. The second direction y is orthogonal to both the thickness direction z and the first direction x.

[0263] Semiconductor device B1 converts the DC power supply voltage applied to first power terminal 14 and two second power terminals 15 into AC power through multiple semiconductor elements 21. The converted AC power is input from two third power terminals 16 to a power supply target such as a motor.

[0264] like Figure 34 、 Figures 36 to 39 、 Figure 41 as well as Figure 42 As shown in FIG, the support substrate 11 supports a plurality of semiconductor elements 21 in the thickness direction z. The support substrate 11 is composed of, for example, a DBC (Direct Bonded Copper) substrate. Figures 33 to 43 As shown, the support substrate 11 includes an insulating layer 111, a support conductor 112 and a back metal layer 113. Figures 35 to 43 As shown, the support substrate 11 is covered with the sealing resin 50 except for a portion of the back metal layer 113 .

[0265] like Figures 36 to 43 As shown, insulating layer 111 includes a portion located between support conductor 112 and back metal layer 113 in the thickness direction z. Insulating layer 111 is made of a material with relatively high thermal conductivity. For example, insulating layer 111 is made of a ceramic containing aluminum nitride (AlN). Insulating layer 111 may also be made of an insulating resin sheet, rather than ceramic.

[0266] like Figure 33 、 Figure 34 as well as Figures 36 to 43As shown in FIG. 1 , the support conductor 112 is located above the insulating layer 111 in the thickness direction z (z1 side). The support conductor 112 is composed of copper (Cu). Figure 42 as well as Figure 43 As shown in FIG, the support conductor 112 is surrounded by the periphery of the insulating layer 111 when viewed from above. Figures 36 to 43 As shown, the support conductor 112 has a main surface 1120. The main surface 1120 is a plane facing the z1 side in the thickness direction z. Figure 33 、 Figure 34 as well as Figures 36 to 43 As shown, the support conductor 112 includes a first conductive portion 1121 and a second conductive portion 1122. The first conductive portion 1121 and the second conductive portion 1122 are each rectangular in a plan view. The first conductive portion 1121 and the second conductive portion 1122 are separated from each other in a first direction x. The first conductive portion 1121 is located on the x1 side of the second conductive portion 1122 in the first direction x. Multiple semiconductor elements 21 are bonded to either the first conductive portion 1121 or the second conductive portion 1122.

[0267] like Figures 36 to 43 As shown in FIG. 1 , the back metal layer 113 is located below the insulating layer 111 (on the z2 side) in the thickness direction z. Figure 35 As shown, the back metal layer 113 is exposed from the sealing resin 50. A heat dissipation component (e.g., a heat sink) (not shown) can be mounted on the lower surface (the surface facing the z2 side) of the back metal layer 113. The back metal layer 113 is composed of copper. The back metal layer 113 has a rectangular shape when viewed from above. When viewed from above, the back metal layer 113 is surrounded by the periphery of the insulating layer 111.

[0268] like Figure 34 as well as Figures 36 to 39 As shown, multiple semiconductor elements 21 are respectively mounted on either the first conductive portion 1121 or the second conductive portion 1122. Each semiconductor element 21 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). In addition, each semiconductor element 21 can also be a switching element such as an IGBT (Insulated Gate Bipolar Transistor) or a diode. In the description of the semiconductor device B1, the semiconductor element 21 is an n-channel type, and is targeted at a vertically structured MOSFET. The semiconductor element 21 includes a compound semiconductor substrate. The composition of the compound semiconductor substrate includes silicon carbide (SiC) or silicon (Si).

[0269] like Figure 34 as well as Figures 36 to 39As shown, in semiconductor device B1, the plurality of semiconductor elements 21 include a plurality of first elements 21A and a plurality of second elements 21B. The structure of each of the plurality of second elements 21B is identical to that of each of the plurality of first elements 21A. The plurality of first elements 21A are mounted on a first conductive portion 1121. The plurality of first elements 21A are arranged along the second direction y. The plurality of second elements 21B are mounted on a second conductive portion 1122. The plurality of second elements 21B are arranged along the second direction y. Each of the plurality of first elements 21A corresponds to a first switching element in the present disclosure. Each of the plurality of second elements 21B corresponds to a second switching element in the present disclosure.

[0270] like Figure 34 、 Figure 37 as well as Figure 38 As shown, the plurality of semiconductor elements 21 include a first electrode 211 , a second electrode 212 , a third electrode 213 and two fourth electrodes 214 .

[0271] like Figure 37 as well as Figure 38 As shown, the first electrode 211 faces either the first conductive portion 1121 or the second conductive portion 1122. A current corresponding to the power before conversion by the semiconductor element 21 flows through the first electrode 211. That is, the first electrode 211 corresponds to the drain electrode of the semiconductor element 21.

[0272] like Figure 34 、 Figure 37 as well as Figure 38 As shown, the second electrode 212 is located on the opposite side of the first electrode 211 in the thickness direction z. A current corresponding to the power converted by the semiconductor element 21 flows through the second electrode 212. That is, the second electrode 212 corresponds to the source electrode of the semiconductor element 21.

[0273] like Figure 34 As shown, the third electrode 213 is located on the same side as the second electrode 212 in the thickness direction z. A gate voltage for driving the semiconductor element 21 is applied to the third electrode 213. That is, the third electrode 213 is equivalent to the gate electrode of the semiconductor element 21. Figure 34 As shown, in a plan view, the area of ​​the third electrode 213 is smaller than the area of ​​the second electrode 212 .

[0274] like Figure 34 、 Figure 37 as well as Figure 38As shown, the two fourth electrodes 214 are located on the same side as the second electrode 212 in the thickness direction z and are adjacent to the third electrode 213 in the first direction x. In the illustrated example, the two fourth electrodes 214 are arranged on either side of the third electrode 213 in the second direction y, sandwiching the third electrode 213 therebetween. The potential of each fourth electrode 214 is equal to that of the second electrode 212. The fourth electrode 214 serves as a source sensing electrode. Unlike the illustrated example, each semiconductor element 21 may include only one of the two fourth electrodes 214, or may not include either of the two fourth electrodes 214.

[0275] like Figure 37 as well as Figure 38 As shown, the conductive bonding layer 23 is interposed between any one of the first conductive parts 1121 and 1122 and any first electrode 211 of the plurality of semiconductor elements 21. The conductive bonding layer 23 is, for example, solder. Alternatively, the conductive bonding layer 23 may include a sintered body of metal particles. The first electrodes 211 of the plurality of first elements 21A are conductively bonded to the first conductive part 1121 via the conductive bonding layer 23. As a result, the first electrodes 211 of the plurality of first elements 21A are electrically connected to the first conductive part 1121. The first electrodes 211 of the plurality of second elements 21B are conductively bonded to the second conductive part 1122 via the conductive bonding layer 23. As a result, the first electrodes 211 of the plurality of second elements 21B are electrically connected to the second conductive part 1122. In addition, unlike this embodiment, the plurality of first elements 21A and the plurality of second elements 21B may also be mounted on a metal component that is different from a part of the DBC substrate, etc. In this case, the metal component is equivalent to the first conductive part and the second conductive part in the present disclosure. The metal component may also be supported on, for example, the DBC substrate, etc.

[0276] The plurality of power terminals 13 are electrically connected to the plurality of semiconductor elements 21. Current corresponding to the power before conversion by the plurality of semiconductor elements 21 or current corresponding to the power after conversion by the plurality of semiconductor elements 21 flows through the plurality of power terminals 13. The plurality of power terminals 13 include a first power terminal 14, two second power terminals 15, and two third power terminals 16.

[0277] like Figure 33 as well as Figure 39 As shown, the first power terminal 14 is joined to the first conductive portion 1121. There is no limitation on this joining, and it can be a joining using a conductive joining material (such as solder) not shown in the figure, a joining using laser welding, or a riveting joining. The first power terminal 14 is electrically connected to the first electrodes 211 of the plurality of first elements 21A via the first conductive portion 1121. The first power terminal 14 is a P terminal (positive electrode) to which a DC power supply voltage that is the object of power conversion is applied. As shown Figure 33As shown, the first power terminal 14 is located on the opposite side of the second conductive portion 1122 in the first direction x with the first conductive portion 1121 in between. The first power terminal 14 extends from the first conductive portion 1121 to the x1 side in the first direction x and protrudes from the sealing resin 50 to the x1 side in the first direction x. Figure 32 As shown, the first power terminal 14 includes a portion covered by the sealing resin 50 and a portion exposed from 40. In the first power terminal 14, the portion covered by the sealing resin 50 is bonded to the first conductive portion 1121. In addition, the portion of the first power terminal 14 exposed from the sealing resin 50 serves as the aforementioned P-terminal of the semiconductor device B1.

[0278] The second conductive component 32 is connected to the two second power terminals 15. The two second power terminals 15 are electrically connected to the second electrodes 212 of the plurality of second elements 21B via the second conductive component 32. The two second power terminals 15 are N terminals (negative electrodes) to which a DC power supply voltage, which is the target of power conversion, is applied. The two second power terminals 15 are separated from each other in the second direction y. The first power terminal 14 is located between the two second power terminals 15. Figure 33 As shown, the two second power terminals 15 are located on the same side as the first power terminal 14 relative to the first conductive portion 1121 and the second conductive portion 1122 in the first direction x. The two second power terminals 15 are separated from the first conductive portion 1121 and the second conductive portion 1122. The two second power terminals 15 extend in the first direction x and protrude from the sealing resin 50 toward the x1 side in the first direction x. Figure 32 As shown, the two second power terminals 15 each include a portion covered by the sealing resin 50 and a portion exposed from the sealing resin 50. In each second power terminal 15, the second conductive member 32 is bonded to the portion covered by the sealing resin 50. In addition, in each second power terminal 15, the portion exposed from the sealing resin 50 serves as the aforementioned N-terminal of the semiconductor device B1.

[0279] like Figure 33 as well as Figure 36As shown, the two third power terminals 16 are respectively joined to the second conductive portion 1122. There is no limitation on the joining, and it can be a joining using a conductive joining material (such as solder) not shown in the figure, a joining using laser welding, or a riveting joining. The two third power terminals 16 are respectively connected to the first electrodes 211 of the plurality of second elements 21B via the second conductive portion 1122. In addition, the two third power terminals 16 are respectively connected to the second electrodes 212 of the plurality of first elements 21A via the second conductive portion 1122 and the first conductive component 31. The AC power converted by the plurality of semiconductor elements 21 (the plurality of first elements 21A and the plurality of second elements 21B) is output from the two third power terminals 16. That is, the two third power terminals 16 are respectively the output terminals of the AC power. The two third power terminals 16 are separated from each other in the second direction y. As shown Figure 33 As shown, the two third power terminals 16 are located on the side opposite to the first conductive portion 1121 with the second conductive portion 1122 in the first direction x. The two third power terminals 16 extend from the second conductive portion 1122 to the x2 side of the first direction x and protrude from the sealing resin 50 to the x2 side of the first direction x. Figure 32 As shown, the two third power terminals 16 each include a portion covered by the sealing resin 50 and a portion exposed from the sealing resin 50. In each third power terminal 16, the portion covered by the sealing resin 50 is bonded to the second conductive portion 1122. In addition, in each third power terminal 16, the portion exposed from the sealing resin 50 serves as the aforementioned output terminal of the semiconductor device B1.

[0280] In this embodiment, the semiconductor device B1 includes four first elements 21A and four second elements 21B. The number of first elements 21A and the number of second elements 21B are not limited to this structure and can be appropriately changed according to the performance required of the semiconductor device B1. Figure 34 In the example shown, four first elements 21A and four second elements 21B are provided. The number of first elements 21A and second elements 21B can be two, three, or five or more. The number of first elements 21A and second elements 21B can be equal or different. The number of first elements 21A and second elements 21B is determined by the current capacity handled by semiconductor device B1.

[0281] Semiconductor device B1 is configured as a half-bridge switching circuit, for example. In this case, multiple first elements 21A form the upper branch of semiconductor device B1, and multiple second elements 21B form the lower branch. In the upper branch, multiple first elements 21A are connected in parallel, while in the lower branch, multiple second elements 21B are connected in parallel. Each first element 21A and each second element 21B are connected in series to form a bridge layer.

[0282] The multiple control terminals 45 are pin-shaped terminals used to control the driving of each first element 21A and each second element 21B. For example, each of the multiple control terminals 45 is a crimp terminal. The multiple control terminals 45 include multiple first control terminals 46A to 46C and multiple second control terminals 47A to 47D. The multiple first control terminals 46A to 46C are used for controlling each first element 21A, etc. The multiple second control terminals 47A to 47D are used for controlling each second element 21B, etc.

[0283] The plurality of first control terminals 46A to 46C are arranged at intervals in the second direction y. Figure 34 、 Figure 39 as well as Figure 40 As shown in FIG. 1 and FIG. 2 , each of the first control terminals 46A to 46C is supported on the first conductive portion 1121 via a control terminal support 48 (a first support portion 48A described later). Figure 33 as well as Figure 34 As shown, each of the first control terminals 46A to 46C is located between the plurality of first elements 21A and the first power terminal 14 and the two second power terminals 15 in the first direction x.

[0284] The first control terminal 46A is a terminal (gate terminal) for inputting a drive signal to the plurality of first elements 21A. A drive signal (for example, a gate voltage) for driving the plurality of first elements 21A is input to the first control terminal 46A.

[0285] The first control terminal 46B is a terminal (source sense terminal) for detecting source signals of the plurality of first elements 21A and detects a voltage (voltage corresponding to a source current) applied from the first control terminal 46B to each second electrode 212 (source electrode) of the plurality of first elements 21A.

[0286] The first control terminal 46C is a terminal (drain sense terminal) for detecting the drain voltage of the plurality of first elements 21A and detects the voltage (voltage corresponding to the drain current) applied from the first control terminal 46C to each first electrode 211 (drain electrode) of the plurality of first elements 21A.

[0287] The plurality of second control terminals 47A to 47D are arranged at intervals in the second direction y. Figure 34 、 Figure 39 as well as Figure 43 As shown in FIG. 1 and FIG. 2 , each of the second control terminals 47A to 47D is supported by the second conductive portion 1122 via a control terminal support 48 (a second support portion 48B described later). Figure 33 as well as Figure 34As shown, each of the second control terminals 47A to 47D is located between the plurality of second elements 21B and the two third power terminals 16 in the first direction x.

[0288] The second control terminal 47A is a terminal (gate terminal) for inputting drive signals to the plurality of second elements 21B. A drive signal (e.g., a gate voltage) is input to the second control terminal 47A to drive the plurality of second elements 21B. The second control terminal 47B is a terminal (source sensing terminal) for detecting source signals from the plurality of second elements 21B. The voltage (voltage corresponding to the source current) applied from the second control terminal 47B to each second electrode 212 (source electrode) of the plurality of second elements 21B is detected. The second control terminal 47C and the second control terminal 47D are not electrically connected to any of the plurality of second elements 21B. The second control terminal 47C and the second control terminal 47D are terminals electrically connected to the thermistor 22.

[0289] Each of the plurality of control terminals 45 (the plurality of first control terminals 46A to 46C and the plurality of second control terminals 47A to 47D) includes a bracket 451 and a metal pin 452 .

[0290] The bracket 451 is made of a conductive material. The bracket 451 is arranged on the main surface 1120 of the support conductor 112 (support substrate 11). Figure 44 As shown, the bracket 451 is bonded to the control terminal support 48 (the first metal layer 482 described later) via the conductive bonding layer 459. Figure 44 As shown, the bracket 451 includes a cylindrical portion 453 , a first flange portion 454 and a second flange portion 455 .

[0291] The cylindrical portion 453 extends in the thickness direction z and has, for example, a cylindrical shape.

[0292] The first flange portion 454 is connected to the end portion of the cylindrical portion 453 on the z1 side in the thickness direction z. The first flange portion 454 has a first surface 454a. The first surface 454a faces the z1 side in the thickness direction z. The first surface 454a is located at the end portion of the bracket 451 on the z1 side in the thickness direction z. When viewed in the thickness direction z, the first surface 454a has an annular shape (in the illustrated example, a circular ring shape).

[0293] The second flange portion 455 is connected to the end portion on the z2 side in the thickness direction z of the cylindrical portion 453. In this embodiment, the second flange portion 455 is bonded to the control terminal support 48 (a first metal layer 482 described later) via the conductive bonding layer 459.

[0294] A metal pin 452 is inserted through the first flange portion 454 and a portion of the cylindrical portion 453 of the bracket 451 . The entire bracket 451 is exposed from the sealing resin 50 .

[0295] The metal pin 452 is a rod-shaped member extending in the thickness direction z. The metal pin 452 is supported by the bracket 451 by being press-fitted into the bracket 451. The metal pin 452 is electrically connected to the control terminal support 48 (the first metal layer 482 described later) via the bracket 451 and the conductive bonding layer 459. The metal pin 452 protrudes further toward the z1 side in the thickness direction z than the upper surface of the encapsulating resin 50 (the resin main surface 51 described later).

[0296] The control terminal support 48 supports the plurality of control terminals 45. The control terminal support 48 is interposed between the principal surface 1120 of the first conductive portion 1121 and the principal surface 1120 of the second conductive portion 1122 and the plurality of control terminals 45 in the thickness direction z.

[0297] The control terminal support body 48 includes a first support portion 48A and a second support portion 48B. The first support portion 48A is disposed on the first conductive portion 1121 and supports the first control terminals 46A to 46C of the plurality of control terminals 45. Figure 44 As shown, the first support portion 48A is bonded to the first conductive portion 1121 via a bonding layer 49. The bonding layer 49 can be conductive or insulating, for example, solder. The second support portion 48B is disposed on the second conductive portion 1122 and supports the second control terminals 47A to 47D of the plurality of control terminals 45. Like the first support portion 48A, the second support portion 48B is bonded to the second conductive portion 1122 via a bonding layer (not shown).

[0298] The control terminal support body 48 (each of the first support portion 48A and the second support portion 48B) is formed of, for example, a DBC (Direct Bonded Copper) substrate and includes an insulating layer 481 , a first metal layer 482 , and a second metal layer 483 stacked on top of each other.

[0299] The insulating layer 481 is made of, for example, ceramics and has, for example, a rectangular shape in a plan view.

[0300] like Figure 44 As shown in FIG. 4 , the first metal layer 482 is formed on the upper surface of the insulating layer 481. Each control terminal 45 is vertically arranged on the first metal layer 482. The first metal layer 482 includes, for example, Cu (copper) or a Cu (copper) alloy. Figure 34As shown in FIG. 4 , the first metal layer 482 includes a first portion 482A, a second portion 482B, a third portion 482C, a fourth portion 482D, and a fifth portion 482E. The first portion 482A, the second portion 482B, the third portion 482C, the fourth portion 482D, and the fifth portion 482E are spaced apart and insulated from each other.

[0301] The fourth portion 482D is connected to a plurality of first metal wires 41, and is electrically connected to the third electrode 213 (gate electrode) of each first element 21A (each second element 21B) via each first metal wire 41. The fourth portion 482D and the first portion 482A are connected to a plurality of third metal wires 43. Thus, the first portion 482A is electrically connected to the third electrode 213 (gate electrode) of each first element 21A (each second element 21B) via the third metal wires 43 and the first metal wires 41. Figure 34 As shown, the first control terminal 46A is joined to the first portion 482A of the first support portion 48A, and the second control terminal 47A is joined to the first portion 482A of the second support portion 48B.

[0302] The second portion 482B is connected to a plurality of second metal wires 42 and is electrically connected to the fourth electrode 214 (source sensing electrode) of each first element 21A (each second element 21B) via each second metal wire 42. Figure 34 As shown, the first control terminal 46B is joined to the second portion 482B of the first support portion 48A, and the second control terminal 47B is joined to the second portion 482B of the second support portion 48B.

[0303] The second control terminal 47C is connected to the third portion 482C. Figure 34 As shown, the second control terminal 47C is bonded to the third portion 482C of the second support portion 48B. The first control terminal 46C and the second control terminal 47D are bonded to the fifth portion 482E. The first control terminal 46C is bonded to the fifth portion 482E of the first support portion 48A. The fourth wire 44 is bonded to the fifth portion 482E of the first support portion 48A, and is electrically connected to the first electrode 211 (drain electrode) of each first element 21A via the fourth wire 44. The second control terminal 47D is bonded to the fifth portion 482E of the second support portion 48B.

[0304] Thermistor 22 is electrically connected across third portion 482C and fifth portion 482E of second support portion 48B. Thermistor 22 is, for example, an NTC (Negative Temperature Coefficient) thermistor. NTC thermistors have a characteristic in which their resistance decreases gradually as temperature increases. Thermistor 22 serves as a temperature sensor for semiconductor device B1.

[0305] Each of the plurality of first metal wires 41, the plurality of second metal wires 42, the plurality of third metal wires 43, and the fourth metal wire 44 is, for example, a bonding wire. The constituent material of each of the first metal wires 41, the second metal wires 42, the third metal wires 43, and the fourth metal wire 44 is not particularly limited, and may include, for example, Au (gold), Al (aluminum), or Cu (copper). Figure 32 、 Figures 36 to 40 as well as Figure 43 In the embodiment, the plurality of first metal wires 41, the plurality of second metal wires 42, the plurality of third metal wires 43, and the fourth metal wire 44 are omitted.

[0306] like Figure 44 As shown, the second metal layer 483 is formed on the lower surface of the insulating layer 481 (the surface facing the z2 side in the thickness direction z). Figure 44 As shown, the second metal layer 483 of the first support portion 48A is bonded to the first conductive portion 1121 via the bonding layer 49. The second metal layer 483 of the second support portion 48B is similar to the second metal layer 483 of the first support portion 48A and is bonded to the second conductive portion 1122 via a bonding layer (not shown).

[0307] like Figure 33 as well as Figure 36 As shown, the first conductive component 31 is electrically connected to the second electrodes 212 of the plurality of first elements 21A and the second conductive portion 1122. As a result, the second electrodes 212 of the plurality of first elements 21A are electrically connected to the second conductive portion 1122. The composition of the first conductive component 31 is not particularly limited, and for example, it may include copper. The first conductive component 31 is a metal clip. Figure 33 as well as Figure 36 As shown, the first conductive component 31 includes a main body portion 311 , a plurality of first bonding portions 312 , and a plurality of second bonding portions 313 .

[0308] The main body 311 constitutes the main part of the first conductive component 31. Figure 33 As shown, the main body 311 extends in the second direction y. Figure 33 as well as Figure 36 As shown, the main body 311 spans between the first conductive portion 1121 and the second conductive portion 1122. Figure 33 As shown, multiple through-holes 310 are formed in the main body 311. Each of the through-holes 310 extends through the main body 311 in the thickness direction z. When viewed from above, the through-holes 310 overlap the first conductive portion 1121 and the second conductive portion 1122. This facilitates the flow of the sealing resin 50 downward (toward the z2 side of the thickness direction z) into the main body 311 during the formation of the sealing resin 50.

[0309] like Figure 33 as well as Figure 36 As shown, the plurality of first bonding portions 312 are individually bonded to the second electrodes 212 of the plurality of first elements 21A. The plurality of first bonding portions 312 are respectively opposed to the second electrode 212 of any one of the plurality of first elements 21A. When viewed from above, each first bonding portion 312 extends from the main body 311 to the x1 side of the first direction x. In the example shown in the figure, the plurality of first bonding portions 312 are divided into two strands from the main body 311, but they may not be divided into two strands. The base end of each first bonding portion 312 (the end on the side connected to the main body 311) is bent downward in the thickness direction z (on the z2 side of the thickness direction z). Therefore, the front end of each first bonding portion 312 (the end on the side opposite to the side connected to the main body 311) is located in the thickness direction z below the main body 311 (on the z2 side of the thickness direction z).

[0310] like Figure 33 as well as Figure 36 As shown, a plurality of second bonding portions 313 are bonded to the second conductive portion 1122. The plurality of second bonding portions 313 are respectively opposite to the second conductive portion 1122. When viewed from above, each second bonding portion 313 extends from the main body 311 to the x1 side of the first direction x. The base end of each second bonding portion 313 (the end on the side connected to the main body 311) is bent downward in the thickness direction z (on the z2 side of the thickness direction z). Therefore, the front end of each second bonding portion 313 (the end on the side opposite to the side connected to the main body 311) is located in the thickness direction z below the main body 311 (on the z2 side of the thickness direction z).

[0311] like Figure 37 As shown, semiconductor device B1 further includes a first conductive bonding layer 33. The first conductive bonding layer 33 is interposed between the second electrodes 212 of the plurality of first elements 21A and the plurality of first bonding portions 312. The first conductive bonding layer 33 electrically connects the second electrodes 212 of the plurality of first elements 21A to the plurality of first bonding portions 312. The first conductive bonding layer 33 is, for example, solder. Alternatively, the first conductive bonding layer 33 may include a sintered body of metal particles.

[0312] like Figure 36 As shown, semiconductor device B1 further includes a second conductive bonding layer 34. The second conductive bonding layer 34 is interposed between the second conductive portion 1122 and the second bonding portion 313. The second conductive bonding layer 34 electrically connects the second conductive portion 1122 and the second bonding portion 313. The second conductive bonding layer 34 is, for example, solder. Alternatively, the second conductive bonding layer 34 may include a sintered body of metal particles.

[0313] like Figure 32As shown, the second conductive component 32 is electrically connected to the second electrodes 212 of the plurality of second elements 21B and the two second power terminals 15. As a result, the second electrodes 212 of the plurality of second elements 21B are electrically connected to the two second power terminals 15. The composition of the second conductive component 32 is not particularly limited, and for example, it contains copper. The second conductive component 32 is a metal clip. Figure 32 、 Figure 36 as well as Figures 39 to 42 As shown, the second conductive component 32 includes a pair of main bodies 321 , a plurality of third bonding portions 322 , a pair of fourth bonding portions 324 , a plurality of intermediate portions 326 , a plurality of beam portions 327 , and a pair of hanging portions 328 .

[0314] like Figure 32 As shown, the pair of main body parts 321 are located at positions separated from each other in the second direction y. The pair of main body parts 321 extend in the first direction x. Figure 36 as well as Figure 40 As shown, the pair of main bodies 321 are arranged parallel to the upper surfaces of the first conductive portion 1121 and the second conductive portion 1122. The pair of main bodies 321 are located farther from the first conductive portion 1121 and the second conductive portion 1122 than the main body 311 of the first conductive component 31.

[0315] like Figure 32 、 Figure 41 as well as Figure 42 As shown, the plurality of intermediate portions 326 are located at positions separated from each other in the second direction y and are located between the pair of main body portions 321 in the second direction y. The plurality of intermediate portions 326 extend in the first direction x.

[0316] like Figure 32 as well as Figure 42 As shown, the plurality of third bonding portions 322 are individually bonded to the second electrodes 212 of the plurality of second elements 21B. The plurality of third bonding portions 322 are respectively opposed to the second electrode 212 of any one of the plurality of second elements 21B. When viewed from above, the plurality of third bonding portions 322 extend from the plurality of intermediate portions 326 in the second direction y. The base end of each third bonding portion 322 (the end on the side connected to the intermediate portion 326) is bent downward in the thickness direction z (on the z2 side of the thickness direction z). Therefore, the front end of each third bonding portion 322 (the end on the side opposite to the side connected to the intermediate portion 326) is located in the thickness direction z below the intermediate portion 326 (on the z2 side of the thickness direction z) in the thickness direction z.

[0317] like Figure 32 as well as Figure 36 As shown, the pair of fourth engaging portions 324 engages with the two second power terminals 15 individually. The pair of fourth engaging portions 324 faces each of the two second power terminals 15.

[0318] like Figure 32 As shown, the plurality of beam portions 327 are arranged along the second direction y. In a plan view, the plurality of beam portions 327 include regions that individually overlap with the plurality of first bonding portions 312 of the first conductive component 31. Figure 32 as well as Figure 41 As shown, the cross beam portion 327 located in the center of the plurality of cross beam portions 327 in the second direction y has both sides thereof connected to the plurality of intermediate portions 326 in the second direction y. The remaining two cross beam portions 327 in the plurality of cross beam portions 327 have both sides thereof connected to any one of the pair of main body portions 321 and any one of the plurality of intermediate portions 326 in the second direction y.

[0319] like Figure 32 as well as Figure 41 As shown, a pair of hanging parts 328 are connected to a pair of main body parts 321 separately. Figure 41 As shown, a pair of hanging portions 328 extend downward in the thickness direction z (toward the z2 side of the thickness direction z) from a corresponding one of the pair of main body portions 321. The pair of hanging portions 328 are connected to the outer edge of the corresponding one of the pair of main body portions 321 in the second direction y. In the illustrated example, when viewed along the second direction y, the lower ends of the pair of hanging portions 328 (the edges on the z2 side of the thickness direction z) overlap with the first conductive portion 1121.

[0320] like Figure 38 As shown, the semiconductor device B1 further includes a third conductive bonding layer 35. The third conductive bonding layer 35 is interposed between the second electrodes 212 of the plurality of second elements 21B and the plurality of third bonding portions 322. The third conductive bonding layer 35 electrically connects the second electrodes 212 of the plurality of second elements 21B to the plurality of third bonding portions 322. The third conductive bonding layer 35 is, for example, solder. Alternatively, the third conductive bonding layer 35 may include a sintered body of metal particles.

[0321] like Figure 36 As shown, semiconductor device B1 further includes a fourth conductive bonding layer 36. The fourth conductive bonding layer 36 is interposed between the two second power terminals 15 and the pair of fourth bonding portions 324. The fourth conductive bonding layer 36 electrically connects the two second power terminals 15 to the pair of fourth bonding portions 324. The fourth conductive bonding layer 36 is, for example, solder. Alternatively, the fourth conductive bonding layer 36 may include a sintered body of metal particles.

[0322] like Figures 30 to 43As shown, the sealing resin 50 covers the plurality of semiconductor elements 21, the first conductive component 31, the second conductive component 32, the plurality of first metal wires 41, the plurality of second metal wires 42, and the plurality of third metal wires 43. Furthermore, the sealing resin 50 covers a portion of each of the support substrate 11, the plurality of power terminals 13, and the control terminal support 48. The sealing resin 50 has electrical insulation properties. The sealing resin 50 includes, for example, black epoxy resin. The sealing resin 50 is formed, for example, by molding. Figures 30 to 32 as well as Figures 35 to 43 As shown, the sealing resin 50 has a resin main surface 51 , a resin rear surface 52 , a plurality of resin side surfaces 531 to 534 , a plurality of first recesses 511 , and a pair of recesses 531 a .

[0323] like Figure 36 as well as Figures 39 to 43 As shown, the resin main surface 51 faces the same direction as the upper surface (main surface 1120) of the first conductive portion 1121 and the upper surface (main surface 1120) of the second conductive portion 1122 in the thickness direction z. The metal pins 452 of the plurality of control terminals 45 (the plurality of first control terminals 46A to 46C and the plurality of second control terminals 47A to 47D) protrude from the resin main surface 51. Figure 36 as well as Figures 39 to 43 As shown in FIG. 5 , the resin back surface 52 faces the side opposite to the resin main surface 51 in the thickness direction z. Figure 35 As shown, the resin back surface 52 is a frame-shaped structure that surrounds the lower surface (the surface facing the z2 side in the thickness direction z) of the back metal layer 113 of the support substrate 3 when viewed from above. The back metal layer 113 of the support substrate 11 is exposed from the resin back surface 52. The lower surface (the surface facing the z2 side in the thickness direction z) of the back metal layer 113 is, for example, flush with the resin back surface 52.

[0324] like Figure 31 、 Figure 32 、 Figure 36 as well as Figure 39 As shown, the resin side surface 531 and the resin side surface 532 are spaced apart from each other in the first direction x. The resin side surface 531 and the resin side surface 532 face opposite sides in the first direction x and extend in the second direction y. The resin side surface 531 and the resin side surface 532 are connected to the resin main surface 51. The resin side surface 531 faces the x1 side in the first direction x, and the resin side surface 532 faces the x2 side in the first direction x. The first power terminal 14 and the two second power terminals 15 each protrude from the resin side surface 531. The two third power terminals 16 each protrude from the resin side surface 532.

[0325] like Figure 31 、 Figure 32 as well as Figures 40 to 43As shown, the resin side surface 533 and the resin side surface 534 are spaced apart from each other in the second direction y. The resin side surface 533 and the resin side surface 534 face opposite sides in the second direction y and extend in the first direction x. The resin side surface 533 and the resin side surface 534 are connected to the resin main surface 51 and the resin back surface 52. The resin side surface 533 faces the y1 side in the second direction y, and the resin side surface 534 faces the y2 side in the second direction y.

[0326] like Figure 30 、 Figure 39 、 Figure 40 、 Figure 43 as well as Figure 44 As shown in FIG. 1 , the plurality of first recesses 511 are recessed from the resin main surface 51 toward the z2 side in the thickness direction z. In this embodiment, the plurality of first recesses 511 are individually provided corresponding to the plurality of control terminals 45. The plurality of control terminals 45 are individually arranged corresponding to the plurality of first recesses 511.

[0327] like Figure 31 、 Figure 39 、 Figure 40 、 Figure 43 as well as Figure 44 As shown, the first recess 511 overlaps the entire support 451 of the corresponding control terminal 45 when viewed from above. Figure 44 As shown, the first recess 511 has a first recess inner side surface 512 and a chamfered portion 515. The first recess inner side surface 512 extends in the thickness direction z and is formed in a conical shape inclined so that the inner diameter decreases toward the z2 side in the thickness direction z.

[0328] like Figure 44 As shown, the first recessed inner side surface 512 has a first edge 513 and a second edge 514. The first edge 513 is located at the end of the first recessed inner side surface 512 on the z2 side in the thickness direction z and contacts the control terminal support 48 (first metal layer 482). The second edge 514 is located at the end of the first recessed inner side surface 512 on the z1 side in the thickness direction z. The second edge 514 surrounds the first edge 513 in a plan view.

[0329] The chamfered portion 515 is connected to the resin main surface 51 and is interposed between the resin main surface 51 and the first recessed inner surface 512. The specific shape of the chamfered portion 515 is not particularly limited; examples thereof include a curved R-chamfered (arc chamfered) shape or a C-chamfered shape. In the illustrated example, the chamfered portion 515 has an R-chamfered shape.

[0330] Such first recess 511 is formed by molding while pressing control terminal support 48 with a pin or the like having a shape corresponding to first recess 511 , for example, to form a trace of sealing resin 50 . Figure 45 A process for manufacturing the semiconductor device B1 is shown in FIG. Figure 44 Same cross-sectional view. Figure 45 As shown, for example, a cylindrical pin 911 is provided in a mold 91 for molding. A bracket 451 is arranged in the inner space of the cylindrical pin 911, and while the lower end (the end on the z2 side in the thickness direction z) of the cylindrical pin 911 is pushed toward the control terminal support 48 (the first metal layer 482), a fluid resin material is injected into the cavity space 919 of the mold 91. Figure 44 as well as Figure 45 As can be understood, the first concave portion inner side surface 512 of the first concave portion 511 has a draft angle corresponding to the outer peripheral surface of the cylindrical pin 911. Figure 45 As shown, in the mold 91, a rounded portion 915 is provided at the base of the cylindrical pin 911. The chamfered portion 515 of the first recess 511 has a shape corresponding to the rounded portion 915 of the mold 91. After the sealing resin 50 is formed by molding using the mold 91, the entire bracket 451 disposed in the space inside the cylindrical pin 911 is exposed from the sealing resin 50.

[0331] By controlling the configuration of the bracket 451 of the terminal 45, there is Figure 45 The lower end of the cylindrical pin 911 is shown as being pushed across the first metal layer 482 and the insulating layer 481. On the insulating layer 481, the boundary between the portion where the first metal layer 482 is formed and the portion where the first metal layer 482 is not formed has a step in the thickness direction z. Therefore, when the lower end of the cylindrical pin 911 is pushed across the first metal layer 482 and the insulating layer 481, a gap may be created between the lower end of the cylindrical pin 911 and the control terminal support 48 (insulating layer 481). To account for this situation, a method is employed in which, for example, a resist layer is formed on the portion of the upper surface of the insulating layer 481 where the first metal layer 482 is not formed, thereby eliminating the aforementioned step difference between the portion where the first metal layer 482 is formed and the portion where it is not formed on the insulating layer 481. Alternatively, the lower end of the cylindrical pin 911 may be formed of a cushioning material. In this case, when the cylindrical pin 911 is pressed against the control terminal support 48 , the step difference can be absorbed by the cushioning material, and no gap is generated between the lower end of the cylindrical pin 911 and the control terminal support 48 (insulating layer 481 ).

[0332] In addition, refer to Figure 45The method for forming the first recess 511 is not limited to the method described above. For example, the sealing resin 50 may be formed by molding while pressing the control terminal support 48 with a solid cylindrical pin corresponding to the first recess 511. In this case, the bracket 451 is not positioned on the control terminal support 48 during molding. After molding, the bracket 451 is positioned in the first recess 511 of the control terminal support 48.

[0333] In the illustrated example, the first surface 454a of the bracket 451 (first flange portion 454) is located on the z2 side in the thickness direction z relative to the resin main surface 51. Thus, the entire bracket 451 is housed in the first recess 511.

[0334] like Figure 31 As shown, the pair of recesses 531a is recessed from the resin side surface 531 toward the x2 side in the first direction x. The pair of recesses 531a extends from the resin main surface 51 to the resin back surface 52 in the thickness direction z. The pair of recesses 531a is located on both sides of the first power terminal 14 in the second direction y.

[0335] Next, the operation of this embodiment will be described.

[0336] The brackets 451 that constitute each control terminal 45 are arranged on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pins 452 that constitute each control terminal 45 protrude further toward the z1 side in the thickness direction z than the resin main surface 51. With this structure, the multiple control terminals 45 are arranged in an area surrounded by the resin main surface 51 (sealing resin 50) when viewed from above. This semiconductor device B1 can achieve a smaller size when viewed from above.

[0337] The entire bracket 451 of each control terminal 45 is exposed from the sealing resin 50. This structure prevents the sealing resin 50 from flowing into the bracket 451 into which the metal pin 452 is inserted. Therefore, in the semiconductor device B1, the electrical connection between the bracket 451 and the metal pin 452 can be properly maintained, and the control terminal 45 including the bracket 451 and the metal pin 452 can function properly.

[0338] Multiple control terminals 45 are arranged in the first recess 511 of the sealing resin 50. In this embodiment, the sealing resin 50 has multiple first recesses 511, and the multiple control terminals 45 are individually arranged corresponding to the multiple first recesses 511. The first recess 511 (the inner side surface 512 of the first recess) has a first end edge 513 that is in contact with the control terminal support body 48 (the first metal layer 482). According to this structure, the surface distance along the surface of the sealing resin 50 (the resin main surface 51, the inner side surface 512 of the first recess 511, etc.) can be increased between adjacent control terminals 45. Therefore, the semiconductor device B1 is suitable for achieving miniaturization when viewed from above while improving the withstand voltage of adjacent control terminals 45.

[0339] When viewed from above, the first recess 511 completely overlaps the bracket 451 of the corresponding control terminal 45. This structure provides excellent visibility of the bracket 451 surrounded by the first recess 511 when viewed from above. This further improves the workability when press-fitting the metal pin 452 into the bracket 451.

[0340] Hereinafter, modifications of the semiconductor device according to the second aspect of the present disclosure will be described. The configurations of the components in each modification can be combined with each other within a range that does not cause technical contradictions.

[0341] Figures 46 to 48 A semiconductor device according to a first modified example of the first embodiment of the second aspect is shown. Figure 46 1 is a plan view showing a semiconductor device B11 according to this modification. Figure 47 It is along Figure 46 Cross-sectional view of line XLVII-XLVII. Figure 48 It is along Figure 46 The cross-sectional view of the XLVIII-XLVIII line. Figure 46 In the following drawings, elements identical or similar to those of the semiconductor device B1 of the above embodiment are denoted by the same reference numerals as those of the above embodiment, and description thereof will be appropriately omitted.

[0342] In the semiconductor device B11 of this modification, the structure of the first recess 511 in the sealing resin 50 is different from that of the semiconductor device B1 of the above embodiment. Figures 46 to 48As shown, in semiconductor device B11, encapsulating resin 50 has two first recesses 511. One of the two first recesses 511 corresponds to the plurality of control terminals 45 (first control terminals 46A to 46C), and the plurality of control terminals 45 (first control terminals 46A to 46C) are arranged in this first recess 511. When viewed from above, one first recess 511 completely overlaps the brackets 451 for each of the plurality of control terminals 45 (first control terminals 46A to 46C). The other first recess 511 corresponds to the plurality of control terminals 45 (second control terminals 47A to 47D), and the plurality of control terminals 45 (second control terminals 47A to 47D) are arranged in this first recess 511. When viewed from above, the other first recess 511 completely overlaps the brackets 451 for each of the plurality of control terminals 45 (second control terminals 47A to 47D).

[0343] In the semiconductor device B11 of this modified example, the brackets 451 that constitute each control terminal 45 are arranged on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pins 452 that constitute each control terminal 45 protrude further toward the z1 side in the thickness direction z than the resin main surface 51. With this structure, the multiple control terminals 45 are arranged in an area surrounded by the resin main surface 51 (sealing resin 50) when viewed from above. This semiconductor device B11 can achieve a smaller size when viewed from above.

[0344] The entire bracket 451 of each control terminal 45 is exposed from the sealing resin 50. This structure prevents the sealing resin 50 from flowing into the bracket 451 into which the metal pin 452 is inserted. Therefore, in the semiconductor device B11, the electrical connection between the bracket 451 and the metal pin 452 can be properly maintained, and the control terminal 45 including the bracket 451 and the metal pin 452 can function properly.

[0345] Multiple control terminals 45 are arranged in first recesses 511 of the sealing resin 50. In semiconductor device B11, sealing resin 50 has two first recesses 511. Multiple control terminals 45 (first control terminals 46A to 46C) are arranged in one first recess 511, and multiple control terminals 45 (second control terminals 47A to 47D) are arranged in the other first recess 511. This structure, in which multiple control terminals 45 are concentrated in a single first recess 511, allows sealing resin 50 to be formed relatively easily by molding.

[0346] Figure 49 A semiconductor device according to a second modified example of the first embodiment of the second aspect is shown. Figure 49 is a cross-sectional view showing a semiconductor device B12 of this modification example, Figure 40The semiconductor device B12 of this modification further includes a first resin portion 55 , and differs from the semiconductor device B1 of the above embodiment in that it includes the first resin portion 55 .

[0347] The first resin portion 55 fills at least a portion of the first recess 511 and contacts at least a portion of the bracket 451. In the semiconductor device B12, the first resin portion 55 fills each first recess 511 in such a manner that it fills the first recess 511. The first resin portion 55 covers the entire bracket 451 disposed in the first recess 511. The material constituting the first resin portion 55 is not particularly limited. The first resin portion 55 can be the same material as the sealing resin 50, but can also be a material different from the sealing resin 50. In the semiconductor device B12, for example, the material constituting the first resin portion 55 is different from the material constituting the sealing resin 50. In the semiconductor device B12, for example, the elastic modulus of the first resin portion 55 is smaller than the elastic modulus of the sealing resin 50. In this case, when the elastic modulus of the first resin portion 55 is smaller than the elastic modulus of the sealing resin 50, the material constituting the first resin portion 55 is not particularly limited, and examples thereof include silicone resin, silicone gel, etc.

[0348] In the semiconductor device B12 of this modified example, the brackets 451 that constitute each control terminal 45 are arranged on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pins 452 that constitute each control terminal 45 protrude further toward the z1 side in the thickness direction z than the resin main surface 51. With this structure, the multiple control terminals 45 are arranged in an area surrounded by the resin main surface 51 (sealing resin 50) when viewed from above. This semiconductor device B12 can achieve a smaller size when viewed from above.

[0349] The entire bracket 451 of each control terminal 45 is exposed from the sealing resin 50. This structure prevents the sealing resin 50 from flowing into the bracket 451 into which the metal pin 452 is inserted. Therefore, in the semiconductor device B12, the electrical connection between the bracket 451 and the metal pin 452 can be properly maintained, and the control terminal 45 including the bracket 451 and the metal pin 452 can function properly.

[0350] In the semiconductor device B12, each first recess 511 is filled with a first resin portion 55. The first resin portion 55 covers the bracket 451 arranged in each first recess 511. The elastic modulus of the first resin portion 55 is smaller than the elastic modulus of the sealing resin 50. According to such a structure, the stress around the bracket 451 covered by the first resin portion 55 can be reduced. In addition, in the semiconductor device B12, by having the first resin portion 55, it is possible to prevent foreign matter (including moisture) from intruding into the first recess 511 exposed from the sealing resin 50. The semiconductor device B12 of the above structure is preferable in terms of improving durability and reliability. In addition, the semiconductor device B12 also has the same structure as the semiconductor device B1 of the above embodiment and has the same effect as the above embodiment.

[0351] Figure 50 A semiconductor device according to a third modified example of the first embodiment of the second aspect is shown. Figure 50 is a cross-sectional view showing a semiconductor device B13 of this modification example, Figure 47 The semiconductor device B13 of this modification further includes a first resin portion 55 , and differs from the semiconductor device B11 of the above modification in that it includes the first resin portion 55 .

[0352] The first resin portion 55 fills at least a portion of the first recess 511 and contacts at least a portion of the bracket 451. In the semiconductor device B13, the first resin portion 55 fills a portion of the first recess 511. The first resin portion 55 covers a portion of each of the multiple brackets 451 arranged in the first recess 511. The constituent material of the first resin portion 55 is not particularly limited. The first resin portion 55 can be the same material as the sealing resin 50, but can also be a material different from the sealing resin 50. In the semiconductor device B13, for example, the constituent material of the first resin portion 55 is different from the constituent material of the sealing resin 50. In the semiconductor device B13, for example, the elastic modulus of the first resin portion 55 is greater than the elastic modulus of the sealing resin 50. In this way, in the case where the elastic modulus of the first resin portion 55 is greater than the elastic modulus of the sealing resin 50, the constituent material of the first resin portion 55 is not particularly limited, and examples thereof include epoxy potting materials.

[0353] In the semiconductor device B13 of this modified example, the brackets 451 that constitute each control terminal 45 are arranged on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pins 452 that constitute each control terminal 45 protrude further toward the z1 side in the thickness direction z than the resin main surface 51. With this structure, the multiple control terminals 45 are arranged in an area surrounded by the resin main surface 51 (sealing resin 50) when viewed from above. This semiconductor device B13 can achieve a smaller size when viewed from above.

[0354] The entire bracket 451 of each control terminal 45 is exposed from the sealing resin 50. This structure prevents the sealing resin 50 from flowing into the bracket 451 into which the metal pin 452 is inserted. Therefore, in the semiconductor device B13, the electrical connection between the bracket 451 and the metal pin 452 can be properly maintained, and the control terminal 45 including the bracket 451 and the metal pin 452 can function properly.

[0355] In semiconductor device B13, each first recess 511 is filled with a first resin portion 55. The first resin portion 55 covers at least a portion of the bracket 451 disposed in each first recess 511. The elastic modulus of the first resin portion 55 is greater than that of the sealing resin 50. This structure improves the vibration resistance of the bracket 451 covered by the first resin portion 55. The semiconductor device B13 having the above-described structure is preferred for achieving improved performance. Other than this, the semiconductor device B13 also achieves the same functions and effects as the semiconductor device B11 of the above-described modified example.

[0356] Figure 51 A semiconductor device according to a fourth modified example of the first embodiment of the second aspect is shown. Figure 51 is a cross-sectional view showing a semiconductor device B14 of this modification example, Figure 40 Same cross-sectional view. The semiconductor device B14 of this modified example further includes a first resin portion 55. Furthermore, in semiconductor device B14, the dimension of the encapsulating resin 50 in the thickness direction z is smaller than that of the semiconductor device B1 of the aforementioned embodiment. Accordingly, the dimension of each first recess 511 in the thickness direction z is also smaller than that of the aforementioned semiconductor device B1. Furthermore, the bracket 451 of each control terminal 45 protrudes further toward the z1 side of the thickness direction z than the resin main surface 51 of the encapsulating resin 50. The first surface 454a of the bracket 451 (first flange portion 454) is located toward the z1 side of the thickness direction z relative to the resin main surface 51. Consequently, a portion of the bracket 451 is housed within the first recess 511.

[0357] The first resin portion 55 fills at least a portion of the first recess 511 and is in contact with at least a portion of the bracket 451. In the semiconductor device B14, the first resin portion 55 is filled in each first recess 511 in a manner that fills the first recess 511. The constituent material of the first resin portion 55 is not particularly limited. The first resin portion 55 can be the same material as the sealing resin 50, but can also be a material different from the sealing resin 50. In the semiconductor device B14, for example, the constituent material of the first resin portion 55 is different from the constituent material of the sealing resin 50. In the semiconductor device B14, for example, the elastic modulus of the first resin portion 55 is smaller than the elastic modulus of the sealing resin 50. In this way, the constituent material of the first resin portion 55 in the case where the elastic modulus of the first resin portion 55 is smaller than the elastic modulus of the sealing resin 50 is not particularly limited, and examples thereof include silicone resin, silicone gel, etc.

[0358] In semiconductor device B14, first resin portion 55 includes a portion located on the z1 side in thickness direction z relative to resin main surface 51. The portion located on the z1 side in thickness direction z relative to resin main surface 51 in first resin portion 55 is, for example, a portion that rises toward the z1 side in thickness direction z along the outer circumference of bracket 451 (cylindrical portion 453) due to surface tension of first resin portion 55. In the illustrated example, first surface 454a of bracket 451 (first flange portion 454) is exposed from first resin portion 55.

[0359] In the semiconductor device B14 of this modified example, the brackets 451 that constitute each control terminal 45 are arranged on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pins 452 that constitute each control terminal 45 protrude further toward the z1 side in the thickness direction z than the resin main surface 51. With this structure, the multiple control terminals 45 are arranged in an area surrounded by the resin main surface 51 (sealing resin 50) when viewed from above. This semiconductor device B14 can achieve a smaller size when viewed from above.

[0360] The entire bracket 451 of each control terminal 45 is exposed from the sealing resin 50. This structure prevents the sealing resin 50 from flowing into the bracket 451 into which the metal pin 452 is inserted. Therefore, in the semiconductor device B14, the electrical connection between the bracket 451 and the metal pin 452 can be properly maintained, and the control terminal 45 including the bracket 451 and the metal pin 452 can function properly.

[0361] In the semiconductor device B14, each first recess 511 is filled with a first resin portion 55. The first resin portion 55 covers the bracket 451 arranged in each first recess 511. The elastic modulus of the first resin portion 55 is smaller than the elastic modulus of the sealing resin 50. According to such a structure, the stress around the bracket 451 covered by the first resin portion 55 can be reduced. In addition, in the semiconductor device B14, the first surface 454a of each bracket 451 is exposed from the first resin portion 55. Thus, after the first recess 511 is filled with the first resin portion 55, the metal pin 452 can be pressed into the bracket 451. The operation of pressing the metal pin 452 into the bracket 451 is stable. In addition, the semiconductor device B14 also has the same structure as the semiconductor device B1 of the above embodiment and has the same effects as the above embodiment.

[0362] Figure 52 as well as Figure 53 A semiconductor device according to a fifth modified example of the first embodiment of the second aspect is shown. Figure 52 It is a top view showing a semiconductor device B15 according to this modification. Figure 53 It is along Figure 52 In the semiconductor device B15 of this modification, the sealing resin 50 has a plurality of second recesses 517 . The sealing resin 50 is different from the semiconductor device B1 of the above embodiment in that it has the second recesses 517 .

[0363] The second recess 517 is recessed from the resin main surface 51 toward the z2 side in the thickness direction z. In the semiconductor device B15, the sealing resin 50 has a plurality of second recesses 517. The plurality of second recesses 517 are provided corresponding to any one of the plurality of first recesses 511. Figure 52 As shown, the second recess 517 surrounds the corresponding first recess 511 in a plan view. In the example shown in the figure, the second recess 517 is annular in a plan view.

[0364] like Figure 53 As shown, the second recess 517 has a second recess bottom 518. The second recess bottom 518 is located at the end on the z2 side in the thickness direction z of the second recess 517. The second recess bottom 518 is spaced apart from the control terminal support 48 toward the z1 side in the thickness direction z.

[0365] In the semiconductor device B15 of this modified example, the brackets 451 that constitute each control terminal 45 are arranged on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pins 452 that constitute each control terminal 45 protrude further toward the z1 side in the thickness direction z than the resin main surface 51. With this structure, the multiple control terminals 45 are arranged in an area surrounded by the resin main surface 51 (sealing resin 50) when viewed from above. This semiconductor device B15 can achieve a smaller size when viewed from above.

[0366] The entire bracket 451 of each control terminal 45 is exposed from the sealing resin 50. This structure prevents the sealing resin 50 from flowing into the bracket 451 into which the metal pin 452 is inserted. Therefore, in the semiconductor device B15, the electrical connection between the bracket 451 and the metal pin 452 can be properly maintained, and the control terminal 45 including the bracket 451 and the metal pin 452 can function properly.

[0367] In the semiconductor device B15, the sealing resin 50 has a second recess 517. The second recess 517 surrounds the first recess 511 when viewed from above. The end of the second recess 517 on the z2 side in the thickness direction z (the second recess bottom surface 518) is spaced apart from the control terminal support 48 on the z1 side in the thickness direction z. Due to this structure, the creepage distance along the surface of the sealing resin 50 (resin main surface 51, first recess inner surface 512 of the first recess 511, second recess 517, etc.) can be further increased between the control terminal 45 surrounded by the second recess 517 and the adjacent control terminal 45 when viewed from above. The semiconductor device B15 can be miniaturized when viewed from above and can further improve the withstand voltage of the adjacent control terminal 45. In addition, the semiconductor device B15 is within the same structural range as the semiconductor device B1 of the above-mentioned embodiment and achieves the same functions and effects as the above-mentioned embodiment.

[0368] The semiconductor device of the present disclosure is not limited to the above-described embodiment, and the specific structure of each part of the semiconductor device of the present disclosure can be freely modified in various designs.

[0369] In the above embodiment and various modifications, the entire bracket 451 of each of the plurality of control terminals 45 is described as being exposed from the sealing resin 50. However, the present disclosure is not limited thereto. For example, the bracket 451 may be covered by the sealing resin 50 in any portion of the plurality of control terminals 45.

[0370] The second aspect of the present disclosure includes the configurations described in the following Supplementary Notes 1B to 17B.

[0371] Note 1B.

[0372] A semiconductor device comprising:

[0373] a supporting substrate having a main surface facing one side in the thickness direction;

[0374] at least one terminal including a conductive bracket disposed on the main surface and a metal pin inserted into the bracket; and

[0375] a sealing resin having a resin main surface facing one side in the thickness direction and covering at least a portion of the support substrate;

[0376] In at least one of the at least one terminal, the entirety of the bracket is exposed from the sealing resin.

[0377] The metal pin protrudes further toward one side in the thickness direction than the resin main surface.

[0378] Note 2B.

[0379] According to the semiconductor device described in Supplementary Note 1B,

[0380] The device further comprises a terminal support body interposed between the support substrate and the at least one terminal in the thickness direction.

[0381] The bracket is supported by the terminal support body.

[0382] Note 3B.

[0383] According to the semiconductor device described in Supplementary Note 2B,

[0384] The sealing resin covers a portion of the terminal support.

[0385] Note 4B.

[0386] According to the semiconductor device described in Supplementary Note 3B,

[0387] having a plurality of the above-mentioned terminals,

[0388] The sealing resin has at least one first recessed portion recessed from the resin main surface toward the other side in the thickness direction.

[0389] The at least one first recess has a first end edge in contact with the terminal support body.

[0390] The plurality of terminals are disposed in the at least one first recess.

[0391] Note 5B.

[0392] According to the semiconductor device described in Supplementary Note 4B,

[0393] having a plurality of the above-mentioned first recesses,

[0394] The plurality of terminals are individually arranged corresponding to the plurality of first recesses.

[0395] When viewed in the thickness direction, the plurality of first recesses respectively overlap with the entirety of the bracket in the corresponding terminal.

[0396] Note 6B.

[0397] According to the semiconductor device described in Supplementary Note 4B,

[0398] When viewed in the thickness direction, the first recess overlaps all of the brackets in the plurality of terminals.

[0399] Note 7B.

[0400] The semiconductor device according to Supplementary Note 5B or 6B,

[0401] further comprising a first resin portion filling at least a portion of the first recess,

[0402] The first resin portion is in contact with at least a portion of the bracket.

[0403] Supplementary Note 8B.

[0404] According to the semiconductor device described in Supplementary Note 7B,

[0405] The constituent material of the first resin portion is different from the constituent material of the sealing resin.

[0406] The elastic modulus of the first resin portion is smaller than the elastic modulus of the sealing resin.

[0407] Note 9B.

[0408] According to the semiconductor device described in Supplementary Note 7B,

[0409] The constituent material of the first resin portion is different from the constituent material of the sealing resin.

[0410] The first resin portion has an elastic modulus greater than an elastic modulus of the sealing resin.

[0411] Note 10B.

[0412] The semiconductor device according to any one of Supplementary Notes 4B to 9B,

[0413] The sealing resin has a second recessed portion that is recessed from the resin main surface toward the other side in the thickness direction.

[0414] The second recess surrounds the first recess when viewed in the thickness direction.

[0415] Supplementary Note 11B.

[0416] According to the semiconductor device described in Supplementary Note 10B,

[0417] The second recess has a second recess bottom surface located at an end portion on the other side in the thickness direction.

[0418] The second recess bottom surface is spaced apart from the terminal support body toward one side in the thickness direction.

[0419] Note 12B.

[0420] The semiconductor device according to any one of Supplementary Notes 4B to 11B (or any one of Supplementary Notes 4B to 6B),

[0421] The at least one first recess includes an inner side surface of the first recess,

[0422] The inner side surface of the first recess has the first end edge located at the other end in the thickness direction and the second end edge located at the one end in the thickness direction.

[0423] The second end edge surrounds the first end edge when viewed in the thickness direction.

[0424] Supplement 13B.

[0425] According to the semiconductor device described in Supplementary Note 12B,

[0426] The at least one first recess has a chamfered portion interposed between the resin main surface and an inner side surface of the first recess.

[0427] Note 14B.

[0428] The semiconductor device according to any one of Supplementary Notes 1B to 13B (or any one of Supplementary Notes 1B to 6B),

[0429] The bracket has a first surface located at an end portion on one side in the thickness direction.

[0430] The first surface is arranged on the other side in the thickness direction relative to the resin main surface.

[0431] Note 15B.

[0432] The semiconductor device according to any one of Supplementary Notes 2B to 13B (or any one of Supplementary Notes 2B to 6B),

[0433] The device further includes at least one semiconductor element disposed on the main surface and electrically connected to the at least one terminal.

[0434] Note 16B.

[0435] According to the semiconductor device described in Supplementary Note 15B,

[0436] The at least one terminal is a control terminal for controlling the at least one semiconductor element.

[0437] Supplement 17B.

[0438] According to the semiconductor device described in Supplementary Note 16B,

[0439] The support substrate includes a first conductive portion and a second conductive portion, the first conductive portion and the second conductive portion being spaced apart in a first direction perpendicular to the thickness direction.

[0440] The at least one semiconductor element includes a first switching element connected to the first conductive portion and a second switching element connected to the second conductive portion.

[0441] The control terminal includes a first control terminal for controlling the first switching element and a second control terminal for controlling the second switching element.

[0442] The terminal support body includes a first support portion supporting the first control terminal and a second support portion supporting the second control terminal.

[0443] Explanation of symbols

[0444] (Explanation of Symbols in the First Scheme)

[0445] A1, A11, A12, A13, A14, A15, A2—semiconductor device, 10A—first semiconductor element, 10B—second semiconductor element, 101—element main surface, 102—element back surface, 11—first main surface electrode, 12—second main surface electrode, 121—gate finger, 13—third main surface electrode, 15—back surface electrode, 17—thermistor, 19—conductive bonding material, 3—support substrate, 301—support surface, 302—bottom surface, 31—insulating layer, 32—support conductor, 32A—first conductive portion, 32B—second conductive portion, 321—first bonding layer, 33—back surface metal layer, 41—first terminal, 42—second terminal, 43—third terminal, 44 —Fourth terminal, 45—Control terminal, 451—Bracket, 452—Metal pin, 453—Cylinder-shaped portion, 453a—First outer side surface, 453b—First inner side surface, 454—First flange portion, 454a—First surface, 454b—Second surface, 455—Second flange portion, 459—Conductive bonding material, 46A, 46B, 46C, 46D, 46E—First control terminal, 47A, 47B, 47C, 47D—Second control terminal, 48—Control terminal support body (terminal support body), 48A—First support portion, 48B—Second support portion, 481—Insulation layer, 482—First metal layer, 482A—First part, 482B—Second part, 482C—Third Part, 482D—fourth part, 482E—fifth part, 482F—sixth part, 483—second metal layer, 49—bonding material, 5—first conductive component, 51—main part 51, 514—first opening, 52—first bonding part, 53—second bonding part, 59—conductive bonding material, 6—second conductive component, 602—first step part, 603—second step part, 61—third bonding part, 611—flat part, 612—first inclined part, 64—first path part, 641—first strip-shaped part, 643—first extension part, 649—recess, 65—second path part, 651—second strip-shaped part, 653—second extension part, 659—recess, 66—third path part , 669—recess, 67—fourth path portion, 69—conductive bonding material, 71, 72, 73, 74—metal wire, 8—sealing resin, 81—resin main surface, 810—first recess, 811—inner side surface of recess, 812—bottom surface of recess, 813—end edge of recess, 814—cylindrical inner side surface, 815—conical inner side surface, 82—resin back surface, 831, 832—resin side surface, 832a—recess, 833, 834—resin side surface, 851—protrusion, 851a—protrusion end surface, 851b—recess, 851c—inner wall surface, 852—first protrusion, 852a—top surface of protrusion, 89—first resin filling portion, L1—first size, L2—second size.

[0446] (Explanation of Symbols in the Second Scheme)

[0447] B1, B11, B12, B13, B14, B15—semiconductor device, 11—support substrate, 111—insulating layer, 112—support conductor, 1120—main surface, 1121—first conductive portion, 1122—second conductive portion, 113—back metal layer, 13—power terminal, 14—first power terminal, 15—second power terminal, 16—third power terminal, 21—semiconductor element, 21A—first element (first switching element), 21B—second element (second switching element), 211—first electrode, 212—second electrode, 213—third electrode, 21 4—fourth electrode, 22—thermistor, 23—conductive bonding layer, 31—first conductive component, 310—through hole, 311—main body, 312—first bonding portion, 313—second bonding portion, 32—second conductive component, 321—main body, 322—third bonding portion, 324—fourth bonding portion, 326—middle portion, 327—beam portion, 328—hanging portion, 33—first conductive bonding layer, 34—second conductive bonding layer, 35—third conductive bonding layer, 36—fourth conductive bonding layer, 41—first metal wire, 42—second metal wire, 43—third metal wire, 4 4—Fourth metal wire, 45—Control terminal (terminal), 451—Bracket, 452—Metal pin, 453—Cylinder, 454—First flange, 454a—First surface, 455—Second flange, 459—Conductive bonding layer, 46A, 46B, 46C—First control terminal, 47A, 47B, 47C, 47D—Second control terminal, 48—Control terminal support (terminal support), 48A—First support portion, 48B—Second support portion, 481—Insulation layer, 482—First metal layer, 482A—First portion, 482B—Second portion, 482 C—third part, 482D—fourth part, 482E—fifth part, 483—second metal layer, 49—bonding layer, 50—sealing resin, 51—resin main surface, 511—first recess, 512—inner surface of first recess, 513—first end edge, 514—second end edge, 515—chamfered portion, 517—second recess, 518—bottom surface of second recess, 52—resin back side, 531, 532, 533, 534—resin side, 531a—recess, 55—first resin part, 91—mold, 911—cylindrical pin, 915—rounded corner, 919—cavity space.

Claims

1. A semiconductor device, characterized in that: have: A support substrate comprising an insulating layer, a support conductor, and a back metal layer, wherein the support conductor has a main surface facing one side in the thickness direction; at least one semiconductor element disposed on the main surface; at least one control terminal for controlling the at least one semiconductor element; a control terminal support body, which is interposed between the support substrate and the at least one control terminal in the thickness direction and supports the control terminal; and a sealing resin having a resin main surface facing one side in the thickness direction and covering at least a portion of the support substrate; The control terminal protrudes further toward one side in the thickness direction than the resin main surface. The sealing resin has at least one first recessed portion recessed from the resin main surface toward the other side in the thickness direction. The at least one first recess has a first recess inner side surface, and the first recess inner side surface has a first end edge in contact with the control terminal support body. The control terminal is disposed in the at least one first recess and is entirely exposed from the sealing resin. The semiconductor device further comprises: a first power terminal and at least one second power terminal, which are arranged on one side of a first direction perpendicular to the thickness direction with respect to the support substrate; and at least one third power terminal, which is arranged on the other side of the first direction relative to the support substrate, The first power terminal and the at least one second power terminal include a portion covered by the sealing resin and a portion exposed from the sealing resin. The at least one third power terminal includes a portion covered by the sealing resin and a portion exposed from the sealing resin.

2. The semiconductor device according to claim 1, wherein The control terminal includes a conductive cylindrical bracket and a metal pin inserted into the bracket. The bracket includes a cylindrical portion extending in the thickness direction, a first flange portion connected to an end portion of the cylindrical portion on one side in the thickness direction, and a second flange portion connected to an end portion of the cylindrical portion on the other side in the thickness direction. The entire stent is exposed from the sealing resin.

3. The semiconductor device according to claim 2, wherein When viewed in the thickness direction, the first recess overlaps the entirety of the bracket.

4. The semiconductor device according to claim 2, wherein The semiconductor device includes a plurality of the control terminals and a plurality of the first recesses. The plurality of control terminals are individually arranged corresponding to the plurality of first recesses, When viewed in the thickness direction, the plurality of first recesses respectively overlap with the entirety of the bracket in the corresponding control terminal.

5. The semiconductor device according to claim 1, wherein The first recessed portion inner side surface extends in the thickness direction and is inclined so that an inner diameter thereof decreases toward the other side in the thickness direction.

6. The semiconductor device according to claim 1, wherein The inner side surface of the first recess has the first end edge located at the other end in the thickness direction and the second end edge located at the one end in the thickness direction. When viewed in the thickness direction, the second end edge surrounds the first end edge.

7. The semiconductor device according to claim 1, wherein The at least one first recess has a chamfered portion interposed between the resin main surface and an inner side surface of the first recess.

8. The semiconductor device according to claim 1, wherein The control terminal is a pin-shaped terminal for controlling the driving of the semiconductor element.

9. The semiconductor device according to claim 1, wherein The semiconductor device includes a plurality of the control terminals and a plurality of the first recesses. The plurality of control terminals are individually arranged corresponding to the plurality of first recesses, respectively.

10. The semiconductor device according to claim 1, wherein The semiconductor device includes a plurality of the control terminals. The plurality of control terminals are disposed in the at least one first recess.

11. The semiconductor device according to any one of claims 1 to 10, wherein The invention further includes a first resin portion that fills the first recess.

12. The semiconductor device according to claim 1, wherein The at least one second power terminal includes two second power terminals. The two second power terminals are spaced apart from each other in a second direction perpendicular to the thickness direction and the first direction, and are respectively arranged on one side and the other side of the second direction with the first power terminal interposed therebetween.

13. The semiconductor device according to claim 1, wherein The control terminal support body includes an insulating layer and a metal layer formed on a surface of the insulating layer facing one side in the thickness direction. The control terminal is vertically arranged on the metal layer.

14. The semiconductor device according to claim 1, wherein The sealing resin covers a portion of the control terminal support.

15. A method for manufacturing a semiconductor device, the semiconductor device comprising: a support substrate having a main surface facing one side in a thickness direction; at least one semiconductor element arranged on the main surface; at least one control terminal for controlling the at least one semiconductor element; a control terminal support body interposed between the support substrate and the at least one control terminal in the thickness direction and supporting the control terminal; a sealing resin having a resin main surface facing one side in the thickness direction and covering at least a portion of the support substrate; a first power terminal and at least one second power terminal, which are arranged on one side of a first direction orthogonal to the thickness direction relative to the support substrate; and at least one third power terminal, which is arranged on the other side of the first direction relative to the support substrate, the control terminal protruding further toward one side in the thickness direction than the resin main surface. The method for manufacturing a semiconductor device is characterized in that: The method further comprises forming a sealing resin by molding, wherein the sealing resin covers at least a portion of the support substrate, a portion of the control terminal support, a portion of each of the first power terminal and the at least one second power terminal, and a portion of each of the at least one third power terminal. The step of forming the sealing resin forms the sealing resin having the first recess by performing molding while pressing a mold against the control terminal support in a state where the control terminal is not arranged on the control terminal support.

16. The method for manufacturing a semiconductor device according to claim 15, wherein: In the step of forming the sealing resin, the resin main surface and the first recessed portion, which is recessed from the resin main surface toward the other side in the thickness direction and has a shape corresponding to the mold, are formed. The first recess includes an inner side surface of the first recess extending in the thickness direction. The inner side surface of the first recess is inclined so that the inner diameter thereof decreases toward the other side in the thickness direction.

17. The method for manufacturing a semiconductor device according to claim 16, wherein: In the step of forming the sealing resin, the first recess is molded so as to have a chamfered portion interposed between the resin main surface and an inner side surface of the first recess.

18. The method for manufacturing a semiconductor device according to claim 17, wherein: In the step of forming the sealing resin, the plurality of first recesses are molded so as to overlap with the corresponding control terminal when viewed in the thickness direction.

19. The method for manufacturing a semiconductor device according to claim 15, wherein: In the step of forming the sealing resin, the first recess is molded so as to overlap with the plurality of control terminals when viewed in the thickness direction.

20. The method for manufacturing a semiconductor device according to claim 15, wherein: Before the step of forming the sealing resin, the method further includes forming a resist layer on the insulating layer of the control terminal support and on a portion of the upper surface of the insulating layer where the first metal layer is not formed.

21. The method for manufacturing a semiconductor device according to claim 15, wherein: The lower end portion of the mold is made of a cushioning material.

22. The method for manufacturing a semiconductor device according to any one of claims 15 to 21, wherein: After the step of forming the sealing resin, the method further includes the step of arranging the control terminal in the first recess.

23. The method for manufacturing a semiconductor device according to claim 22, wherein: In the step of arranging the control terminal in the first recess, the plurality of control terminals are individually arranged corresponding to the plurality of first recesses, respectively.

24. The method for manufacturing a semiconductor device according to claim 22, wherein: In the step of arranging the control terminal in the first recess, a plurality of the control terminals are arranged in at least one of the first recesses.

25. The method for manufacturing a semiconductor device according to claim 22, wherein: After the step of arranging the control terminal in the first recess, the method further includes filling the first recess with a first resin portion.

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