Composition for thermally conductive adhesive and method for producing same, thermally conductive film-like adhesive, and semiconductor package using thermally conductive film-like adhesive and method for producing same

Abstract

A composition for a thermally conductive adhesive, a thermally conductive film-like adhesive, a semiconductor package, and methods for producing the same, the composition for a thermally conductive adhesive comprising (A) an epoxy resin, (B) an epoxy resin curing agent, (C) a polymer component, and (D) a nitride ceramic filler, the nitride ceramic filler (D) satisfies the conditions of (1) an image analysis average particle diameter of 0.1-2.5 [mu] m, (2) an image analysis circularity of 0.7 or more, and (3) an image analysis maximum particle diameter of 10.0 [mu] m or less, and the ratio of the nitride ceramic filler (D) in the total content of the epoxy resin (A), the epoxy resin curing agent (B), the polymer component (C), and the nitride ceramic filler (D) is 25-65 vol%.

Description

Technical Field

[0001] The present invention relates to a composition for a thermally conductive adhesive and a method for producing the same, a thermally conductive film-like adhesive, and a semiconductor package using the thermally conductive film-like adhesive and a method for producing the same. Background Art

[0002] In recent years, as electronic devices have become increasingly miniaturized and more sophisticated, the semiconductor packages they house have also become increasingly sophisticated and multifunctional, leading to a trend toward finer wiring patterns for semiconductor chips. This trend has led to the widespread adoption of stacked MCPs (Multi-Chip Packages), which combine multiple layers of semiconductor chips. These are found in memory packages for mobile phones and portable audio devices. Furthermore, as mobile phones and other devices become more multifunctional, the density and integration of packages are also increasing. This trend is further fueling the development of multi-layered semiconductor chips.

[0003] During the manufacturing process of this memory package, a film-like adhesive (die bonding) is used to bond the wiring substrate to the semiconductor chip, as well as to bond the semiconductor chips to each other (so-called die bonding). As chips become increasingly multilayered, the die bonding film needs to be thinner. Furthermore, in recent years, the miniaturization of chip wiring patterns has been advancing, making it easier for semiconductor components to generate heat. Therefore, in order to facilitate the dissipation of heat outside the package, these die bonding films are mixed with thermally conductive fillers (inorganic fillers) to achieve high thermal conductivity.

[0004] Thin thermally conductive die-bonding films are designed as film-like adhesives that are highly filled with small-particle thermally conductive fillers. However, smaller filler particle sizes increase the specific surface area, leading to stronger interactions between fillers. This makes it easier for fillers to aggregate when mixed with resin during die-bonding film production. As a result, aggregates are easily dispersed on the surface of the resulting thin thermally conductive die-bonding film. Furthermore, small-particle thermally conductive fillers tend to reduce the fluidity of the die-bonding film and increase its melt viscosity. Consequently, thin thermally conductive die-bonding films highly filled with small-particle thermally conductive fillers can become entangled in gaps when bonded to the back of a semiconductor chip or a wiring substrate, or fail to fully embed themselves into the uneven surfaces of the wiring substrate, potentially leading to problems such as reduced adhesion and reduced heat dissipation.

[0005] Regarding thermally conductive die-bonding films, for example, Patent Document 1 describes an adhesive composition comprising specific amounts of an epoxy resin (A), an epoxy resin curing agent (B), a polymer component (C), and an inorganic filler (D). The inorganic filler (D) has an average particle size (d50) of 0.1 to 3.5 μm, and a ratio of the particle size at 90% cumulative distribution frequency (d90) to the average particle size (d50) of 5.0 or less. The technique described in Patent Document 1 allows the use of this adhesive composition to produce a film-like adhesive. Even in thin film form, the formation of voids after the die-bonding process can be suppressed, resulting in a film-like adhesive with excellent adhesion to the adherend and excellent thermal conductivity.

[0006] Patent Document 2 describes a heat-dissipating film-like adhesive containing two or more thermally conductive fillers having different Mohs hardnesses, wherein the wear amount of a blade in a dicing step is 50 μm / m or less.

[0007] Prior art literature

[0008] Patent Literature

[0009] Patent Document 1: International Publication No. 2021 / 033368

[0010] Patent Document 2: Japanese Patent Application Laid-Open No. 2019-21829 Summary of the Invention

[0011] Problems to be solved by the invention

[0012] To improve the thermal conductivity of film adhesives, nitride ceramics (ceramics containing nitrogen) with high thermal conductivity, such as aluminum nitride, are considered promising filler materials. Various commercially available fine filler materials for nitride ceramics are available, but to further enhance the performance of the resulting film adhesive, a technology is needed to effectively suppress the aggregation of these fillers and the increase in the melt viscosity of the film adhesive.

[0013] The present invention has been made in view of the problems of the above-mentioned prior art, and aims to provide a thermally conductive film adhesive, a thermally conductive adhesive composition suitable for forming the thermally conductive film adhesive, and a method for producing the same. The thermally conductive film adhesive is a thermally conductive film adhesive using a nitride ceramic filler material (nitride ceramic filler). Although the particle size of the nitride ceramic filler is made smaller, aggregation of the fillers in the film adhesive can be suppressed, and an increase in the melt viscosity of the film adhesive can be suppressed.

[0014] Another object of the present invention is to provide a semiconductor package using the thermally conductive film adhesive having the above-mentioned excellent properties, and a method for manufacturing the same.

[0015] Means for solving problems

[0016] The present inventors conducted extensive research to address the above-mentioned issues and discovered that when nitride ceramic fillers are pulverized / crushed to reduce their particle size, a phenomenon unique to nitride ceramic fillers occurs, contrary to the previously known general phenomenon (increasing the specific surface area and enhancing the interaction between fillers due to particle size reduction). Specifically, the filler's circularity improves, the interaction between filler particles decreases, and aggregation is suppressed, effectively suppressing increases in the melt viscosity of the resulting film adhesive. The present invention was completed based on these findings and further research.

[0017] That is, the above-mentioned problems of the present invention are solved by the following means. [1]

[0019] A thermally conductive adhesive composition comprising an epoxy resin (A), an epoxy resin curing agent (B), a polymer component (C), and a nitride ceramic filler (D), wherein:

[0020] The nitride ceramic filler (D) satisfies the following conditions (1) to (3),

[0021] The ratio of the nitride ceramic filler (D) to the total content of the epoxy resin (A), the epoxy resin curing agent (B), the polymer component (C), and the nitride ceramic filler (D) is 25% to 65% by volume.

[0022] (1) Image analysis shows that the average particle size is 0.1 μm to 2.5 μm.

[0023] (2) The circularity of the image analysis is 0.7 or higher.

[0024] (3) The maximum particle size determined by image analysis is less than 10.0 μm. [2]

[0026] The thermally conductive adhesive composition according to [1], wherein a film-like adhesive obtained from the adhesive composition has a melt viscosity at 70°C of 15,000 Pa·s to 50,000 Pa·s when the temperature is increased from 25°C at a rate of 5°C / min. [3]

[0028] The thermally conductive adhesive composition according to [1] or [2], wherein a film-like adhesive obtained from the adhesive composition has a melt viscosity at 120°C of 500 Pa·s to 10,000 Pa·s when the temperature is increased from 25°C at a rate of 5°C / min. [4]

[0030] The thermally conductive adhesive composition according to any one of [1] to [3], wherein the film-like adhesive obtained from the adhesive composition provides a cured product having a thermal conductivity of 1.0 W / m·K or more after thermal curing. [5]

[0032] The thermally conductive adhesive composition according to any one of [1] to [4], wherein the nitride ceramic filler (D) is a pulverized / crushed product. [6]

[0034] The method for producing a thermally conductive adhesive composition according to any one of [1] to [5] comprises: pulverizing / crushing a nitride ceramic filler to produce the nitride ceramic filler (D) satisfying the conditions (1) to (3) above; and obtaining the thermally conductive adhesive composition using the nitride ceramic filler (D). [7]

[0036] A thermally conductive film-like adhesive obtained from the thermally conductive adhesive composition according to any one of [1] to [5]. [8]

[0038] The thermally conductive film-like adhesive according to [7], wherein the thickness is 1 μm to 10 μm. [9]

[0040] A die-cut / die-bond film, which is formed by laminating a die-cut film and the thermally conductive film-like adhesive described in [7] or [8].

[10]

[0042] A semiconductor package in which a semiconductor chip and a wiring substrate, or semiconductor chips are bonded together by a thermosetting body of the thermally conductive film adhesive described in [7] or [8].

[11]

[0044] A method for manufacturing a semiconductor package, comprising:

[0045] In the first step, the back surface of a semiconductor wafer having at least one semiconductor circuit formed on its surface is thermally pressed against the thermally conductive film adhesive described in [7] or [8] to form an adhesive layer, and a wafer cut film is formed through the adhesive layer.

[0046] In a second step, the semiconductor wafer and the adhesive layer are integrally cut to obtain a semiconductor chip with an adhesive layer having an adhesive sheet and a semiconductor chip on the cut wafer film;

[0047] a third step of peeling the semiconductor chip with the adhesive layer from the diced film and thermocompression-bonding the semiconductor chip with the adhesive layer to the wiring substrate via the adhesive sheet; and

[0048] In the fourth step, the adhesive layer is thermally cured.

[12]

[0050] The method for manufacturing a semiconductor package according to

[11] , wherein the first step is a step of thermocompressing the die-cutting / die-bonding film according to [9] onto the back surface of the semiconductor wafer.

[0051] In the present invention, the numerical range expressed using “to” means a range including the numerical values ​​described before and after “to” as the lower limit and the upper limit.

[0052] In the present invention, (meth)acrylic acid refers to one or both of acrylic acid and methacrylic acid. The same applies to (meth)acrylate.

[0053] Effects of the Invention

[0054] While the thermally conductive adhesive composition of the present invention reduces the particle size of the nitride ceramic filler, it also suppresses aggregation of the fillers in the resulting film adhesive and suppresses increases in the melt viscosity of the film adhesive. The method for producing the thermally conductive adhesive composition of the present invention is suitable as a method for preparing the thermally conductive adhesive composition of the present invention.

[0055] Furthermore, the thermally conductive film-like adhesive of the present invention can suppress aggregation of fillers and also suppress an increase in the melt viscosity of the adhesive even though it contains a nitride ceramic filler having a smaller particle size.

[0056] Furthermore, the semiconductor package of the present invention is bonded to a semiconductor chip using the thermally conductive film adhesive having the above-mentioned excellent properties, thereby suppressing voids on the bonding surface and providing excellent heat release. The method for manufacturing the semiconductor package of the present invention is suitable as a method for manufacturing the semiconductor package of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] Figure 1 This is a schematic longitudinal sectional view showing a preferred embodiment of the first step of the method for manufacturing a semiconductor package of the present invention.

[0058] Figure 2 This is a schematic longitudinal sectional view showing a preferred embodiment of the second step of the method for manufacturing a semiconductor package of the present invention.

[0059] Figure 3 This is a schematic longitudinal sectional view showing a preferred embodiment of the third step of the method for manufacturing a semiconductor package of the present invention.

[0060] Figure 4 This is a schematic longitudinal sectional view showing a preferred embodiment of a step of connecting bonding wires in a method of manufacturing a semiconductor package according to the present invention.

[0061] Figure 5 This is a schematic longitudinal sectional view showing an embodiment of a multilayer lamination method of manufacturing a semiconductor package according to the present invention.

[0062] Figure 6 This is a schematic longitudinal sectional view showing another multi-layer lamination embodiment of the method for manufacturing a semiconductor package of the present invention.

[0063] Figure 7 This is a schematic longitudinal sectional view showing a preferred embodiment of a semiconductor package manufactured by the method for manufacturing a semiconductor package of the present invention. DETAILED DESCRIPTION

[0064] <<Adhesive Composition>>

[0065] The thermally conductive adhesive composition of the present invention (hereinafter also referred to as the adhesive composition of the present invention) is a composition suitable for forming the thermally conductive film-like adhesive of the present invention (hereinafter also referred to as the film-like adhesive of the present invention).

[0066] The adhesive composition of the present invention contains an epoxy resin (A), an epoxy resin curing agent (B), a polymer component (C), and a nitride ceramic filler (D).

[0067] The nitride ceramic filler (D) satisfies the following conditions (1) to (3),

[0068] The ratio of the nitride ceramic filler (D) to the total content of the epoxy resin (A), the epoxy resin curing agent (B), the polymer component (C), and the nitride ceramic filler (D) is 25% to 65% by volume.

[0069] (1) Image analysis shows that the average particle size is 0.1 μm to 2.5 μm.

[0070] (2) The circularity of the image analysis is 0.7 or higher.

[0071] (3) The maximum particle size determined by image analysis is less than 10.0 μm.

[0072] Hereinafter, in this specification, the epoxy resin (A) may be referred to as component (A), the epoxy resin curing agent (B) may be referred to as component (B), the polymer component (C) may be referred to as component (C), and the nitride ceramic filler (D) may be referred to as component (D).

[0073] In the present invention, the image analysis average particle size refers to the average of the projected area equivalent circular diameters of the particles within the observation field, as determined by image analysis. The image analysis maximum particle size refers to the maximum particle size among the projected area equivalent circular diameters of the particles within the observation field, as determined by image analysis.

[0074] The above-mentioned image analysis was performed by placing 1.0 g of the nitride ceramic filler (dried product) on a glass plate and using an image analysis particle size distribution measuring apparatus (Portable PITA, manufactured by Seishin Enterprise Co., Ltd.).

[0075] The conditions for image analysis are as follows.

[0076] Camera: 250x magnification, auto focus (AF) camera

[0077] Observation field (measurement area): 679.428μm × 905.904μm

[0078] Observation field of view: 1

[0079] Image processing software: OpenCV (Open Source Computer Vision Library)

[0080] Particle size: 0.1μm~10000μm

[0081] Convexity: 0.9 or above

[0082] Binarization: Automatic

[0083] Under the above conditions, approximately 1,500 particles of nitride ceramic filler were observed within the field of view. Particles that were within the outline of the field of view (particles where the entire particle could not be observed) were excluded from the data. Particles that were significantly overlapped within the field of view and where the entire particle could not be observed were also excluded from the data. Ultimately, the number of particles targeted for data collection was approximately 1,300. In the above image analysis, data is typically collected for particles exceeding 1,000.

[0084] The image analysis circularity is the average circularity of each particle within the observed field of view obtained through image analysis. The circularity of each particle is calculated using the following formula based on the projected area and perimeter of each particle. The perimeter is measured using the image processing software OpenCV.

[0085] Circularity = 4π × projected area of ​​particle (μm 2 ) / (Particle circumference (μm)) 2

[0086] In the adhesive composition of the present invention, the shape of the nitride ceramic filler is controlled as specified in (1) to (3) above so that the average particle size by image analysis is 0.1 μm to 2.5 μm, the circularity by image analysis is 0.7 or more, and the maximum particle size by image analysis is 10.0 μm or less. The shapes of (1) to (3) above are different from the shapes of commercially available nitride ceramic fillers, and are achieved, for example, by pulverizing / crushing the commercially available nitride ceramic fillers. Furthermore, the adhesive composition of the present invention is controlled so that the proportion of the nitride ceramic filler (D) in the total content of the epoxy resin (A), the epoxy resin curing agent (B), the polymer component (C), and the nitride ceramic filler (D) is 25% by volume to 65% by volume. Thus, when forming a film adhesive, the agglomeration of the nitride ceramic filler caused by mixing with the resin component containing the epoxy resin (A) and the polymer component (C) can be suppressed, and the melt viscosity of the obtained film adhesive can also be suppressed, and a high-performance thermal conductive film adhesive can be obtained. It can be speculated that the reason is due to the hardness of the nitride ceramic filler. It is believed that one of the reasons is that the nitride ceramic filler is crushed / crushed to cause the fillers to collide with each other, thereby flattening the corners and improving the roundness. Even if the particle size is reduced, the specific surface area will not increase, but tends to decrease. As described above, the film adhesive obtained by the adhesive composition of the present invention can suppress the generation of agglomerates and the increase in melt viscosity, although the particle size of the nitride ceramic filler is smaller. As a result, even if a thin film adhesive is made, the generation of voids in the die bonding process can be fully suppressed.

[0087] Considering the reactivity of the epoxy resin (A) and the epoxy resin curing agent (B), the adhesive composition of the present invention is preferably stored refrigerated at 10° C. or lower. The film-like adhesive of the present invention described below can also be stored under the same conditions.

[0088] Furthermore, by using the adhesive composition of the present invention to form a film-like adhesive, it is possible to reduce the wear of the machining blade when used as a die-bonding film in the dicing process. In the manufacturing process of semiconductor packages, it is preferable to minimize the wear rate of the machining blade caused by the die-bonding film during the so-called dicing process, in which the die-bonding film and the semiconductor wafer on which the semiconductor elements are formed are integrally cut. The nitride ceramic filler in the adhesive composition of the present invention has a smaller particle size and higher circularity, thereby suppressing the wear of the machining blade.

[0089] The method for controlling the image analysis average particle size, image analysis circularity, and image analysis maximum particle size of the nitride ceramic filler to satisfy conditions (1) to (3) is not particularly limited. For example, the nitride ceramic filler can be controlled by subjecting it to a pulverization / crushing treatment as described below.

[0090] The image analysis average particle size of the nitride ceramic filler is preferably 0.5 μm to 2.5 μm, more preferably 0.8 μm to 2.5 μm, more preferably 1.0 μm to 2.0 μm, further preferably 1.1 μm to 2.0 μm, further preferably 1.2 μm to 1.8 μm, and particularly preferably 1.2 μm to 1.6 μm. When the nitride ceramic filler is boron nitride, the image analysis average particle size can also be 0.5 μm to 1.8 μm.

[0091] The circularity of the nitride ceramic filler as determined by image analysis is preferably from 0.75 to 1.0, more preferably from 0.80 to 0.99, further preferably from 0.82 to 0.99, and particularly preferably from 0.85 to 0.99.

[0092] The maximum particle size of the nitride ceramic filler as determined by image analysis is preferably 9.0 μm or less, more preferably 8.8 μm or less, and even more preferably 8.0 μm or less. It is particularly preferably 7.0 μm or less. The lower limit is not particularly limited, but is practically 3.0 μm or more.

[0093] In the present invention, the proportion of the nitride ceramic filler (D) in the total amount of the epoxy resin (A), the epoxy resin curing agent (B), the polymer component (C), and the nitride ceramic filler (D) is 25% to 65% by volume. By adjusting the content of the nitride ceramic filler (D) within this range, the desired thermal conductivity and melt viscosity can be imparted to the film adhesive.

[0094] The proportion of the nitride ceramic filler (D) in the total content of components (A) to (D) is preferably 25% to 60% by volume, more preferably 30% to 55% by volume, further preferably 35% to 55% by volume, and even more preferably 30% to 50% by volume.

[0095] The content (volume %) of the nitride ceramic filler (D) can be calculated from the respective mass and specific gravity of components (A) to (D). In the present invention, in the calculation of the volume % above, the specific gravity of components (A) to (C) is 1.2, and the specific gravity of component (D) is calculated using the true specific gravity.

[0096] Hereinafter, each component contained in the adhesive composition will be described in more detail.

[0097] <Epoxy Resin (A)>

[0098] The epoxy resin (A) can be used without particular limitation as long as it is a thermosetting resin having an epoxy group, and can be any of liquid, solid or semi-solid. In the present invention, liquid means a softening point of less than 25°C, solid means a softening point of 60°C or above, and semi-solid means a softening point between the softening point of the liquid and the softening point of the solid (25°C or above and less than 60°C). The epoxy resin (A) used in the present invention preferably has a softening point of 100°C or below, from the perspective of obtaining a film-like adhesive that can achieve a low melt viscosity in a suitable temperature range (e.g., 60°C to 120°C). It should be noted that in the present invention, the softening point is a value measured by the softening point test (ring and ball) method (measurement conditions: in accordance with JIS-2817).

[0099] The epoxy resin (A) used in the present invention preferably has an epoxy equivalent of 500 g / eq or less, more preferably 150 g / eq to 450 g / eq, from the perspective of increasing the crosslinking density of the cured product, thereby increasing the contact probability and contact area of ​​the blended nitride ceramic filler (D), thereby achieving a higher thermal conductivity. It should be noted that in the present invention, the epoxy equivalent refers to the number of grams (g / eq) of resin containing one gram equivalent of epoxy groups.

[0100] The weight average molecular weight of the epoxy resin (A) is usually preferably less than 10000, more preferably not more than 5000. The lower limit is not particularly limited, but is generally 300 or more.

[0101] The weight average molecular weight is a value obtained by GPC (gel permeation chromatography) analysis (hereinafter, the same applies to other resins unless otherwise specified).

[0102] Examples of the skeleton of the epoxy resin (A) include phenol novolac type, o-cresol novolac type, cresol novolac type, dicyclopentadiene type, biphenyl type, fluorene bisphenol type, triazine type, naphthol type, naphthalenediol type, triphenylmethane type, tetraphenyl type, bisphenol A type, bisphenol F type, bisphenol AD ​​type, bisphenol S type, and trimethylolmethane type. Among them, triphenylmethane type, bisphenol A type, cresol novolac type, or o-cresol novolac type is preferred from the viewpoint of obtaining a film-like adhesive having low resin crystallinity and good appearance.

[0103] In the adhesive composition of the present invention, the content of epoxy resin (A) is preferably 3 to 40 parts by mass, more preferably 5 to 40 parts by mass, further preferably 8 to 35 parts by mass, further preferably 10 to 30 parts by mass, and particularly preferably 20 to 30 parts by mass, based on 100 parts by mass of the total content of the components (specifically, components other than the solvent, i.e., solid components) constituting the film adhesive. By making the content above the preferred lower limit, the thermal conductivity of the film adhesive can be increased. On the other hand, by being below the preferred upper limit, the generation of oligomer components can be suppressed, and changes in the film state (film viscosity, etc.) are less likely to occur under slight temperature changes.

[0104] <Epoxy resin curing agent (B)>

[0105] As the epoxy resin curing agent (B), any curing agent such as amines, acid anhydrides, and polyphenols can be used. In the present invention, a latent curing agent is preferably used from the viewpoint of obtaining a thermally conductive adhesive composition having a low melt viscosity, exhibiting curability at temperatures exceeding a certain temperature, exhibiting rapid curing properties, and being able to be stored for long periods at room temperature, wherein the epoxy resin (A) and the polymer component (C) described below have high storage stability, exhibiting low melt viscosity.

[0106] Examples of latent curing agents include dicyandiamide compounds, imidazole compounds, curing catalyst composite polyphenol compounds, hydrazide compounds, boron trifluoride-amine complexes, amine imide compounds, polyamine salts, and modified and microencapsulated forms thereof. In the present invention, imidazole compounds are more preferably used from the perspective of adjusting the melt viscosity of the thermally conductive film adhesive at 70°C and at 120°C to meet the aforementioned preferred ranges.

[0107] These may be used alone or in combination of two or more.

[0108] The content of the epoxy resin curing agent (B) per 100 parts by mass of the epoxy resin (A) is preferably 0.5 to 100 parts by mass, more preferably 1 to 80 parts by mass. By setting the content above the preferred lower limit, the curing time can be shortened. On the other hand, by setting the content below the preferred upper limit, defects in reliability testing after the film adhesive is assembled into a semiconductor, caused by excess curing agent remaining in the film adhesive and the absorption of moisture by the residual curing agent, can be reduced.

[0109] <Polymer Component (C)>

[0110] As the above-mentioned polymer component (C), any component that suppresses the film viscosity at room temperature (25°C) (the property that the film state is easily changed even under a slight temperature change) at the time of forming a film-like adhesive and imparts sufficient adhesion and film-forming properties (film forming properties) can be used. Natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-(meth) acrylic acid copolymer, ethylene-(meth) acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resins such as 6-nylon or 6,6-nylon, phenoxy resin, (meth) acrylic resin, polyester resins such as polyethylene terephthalate and polybutylene terephthalate, polyamide-imide resin, fluororesin, polyurethane resin, etc. can be cited. These polymer components (C) can be used alone or in combination of two or more. As the polymer component (C), at least one of phenoxy resin, (meth) acrylic resin and polyurethane resin is preferred.

[0111] The weight average molecular weight of the polymer component (C) is preferably not less than 10000. The upper limit is not particularly limited, but is practically not more than 5000000.

[0112] The weight average molecular weight of the polymer component (C) is a value determined in terms of polystyrene by GPC (Gel Permeation Chromatography). Specific values ​​of the weight average molecular weight of the polymer component (C) have the same meaning as follows.

[0113] The glass transition temperature (Tg) of the polymer component (C) is preferably lower than 100° C., more preferably lower than 90° C. The lower limit is preferably 0° C. or higher, more preferably 10° C. or higher.

[0114] The glass transition temperature of the polymer component (C) is the glass transition temperature measured by DSC at a temperature increase rate of 0.1° C. / min. Specific values ​​of the glass transition temperature of the polymer component (C) have the same meaning as follows.

[0115] It should be noted that in the present invention, with respect to the epoxy resin (A) and the phenoxy resin in the polymer component (C) that may have an epoxy group, the resin having an epoxy equivalent of 500 g / eq or less is classified as the epoxy resin (A), and the resin that does not meet the above conditions is classified as the component (C).

[0116] (Phenoxy resin)

[0117] Since phenoxy resin has a similar structure to epoxy resin (A), it is preferred as the polymer component (C) from the viewpoint of good compatibility. If phenoxy resin is contained, the adhesiveness can also be excellent.

[0118] Phenoxy resins can be obtained by conventional methods. For example, phenoxy resins can be obtained by reacting bisphenol or biphenol compounds with epihalohydrins such as epichlorohydrin, or by reacting liquid epoxy resins with bisphenol or biphenol compounds.

[0119] The weight average molecular weight of the phenoxy resin is preferably 10,000 or more, more preferably 10,000 to 100,000.

[0120] The amount of epoxy groups remaining in the phenoxy resin in a small amount is preferably 5000 g / eq or more in terms of epoxy equivalent.

[0121] The glass transition temperature (Tg) of the phenoxy resin is preferably lower than 100° C., more preferably lower than 90° C. The lower limit is preferably 0° C. or higher, more preferably 10° C. or higher.

[0122] ((Meth)acrylic resin)

[0123] The (meth)acrylic resin is not particularly limited, and a wide range of resins composed of (meth)acrylic copolymers known as film components of film-like adhesives can be used.

[0124] Examples of the (meth)acrylic resin include poly(meth)acrylates and their derivatives. Examples include copolymers containing 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, acrylic acid, methacrylic acid, itaconic acid, glycidyl methacrylate, and glycidyl acrylate as monomer components.

[0125] In addition, copolymers using (meth)acrylates having a cyclic skeleton, such as cycloalkyl (meth)acrylates, benzyl (meth)acrylates, isobornyl (meth)acrylates, dicyclopentanyl (meth)acrylates, dicyclopentenyl (meth)acrylates, dicyclopentenyloxyethyl (meth)acrylates, and imide (meth)acrylates as monomers are also preferred.

[0126] Furthermore, (meth)acrylic acid alkyl esters having an alkyl group with 1 to 18 carbon atoms, such as methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, and butyl (meth)acrylate, are also preferred as monomer components.

[0127] In addition, it can also be copolymerized with vinyl acetate, (meth)acrylonitrile, styrene, etc.

[0128] From the viewpoint of compatibility with the epoxy resin, the (meth)acrylic resin preferably has a hydroxyl group.

[0129] The weight average molecular weight of the (meth)acrylic copolymer is preferably 10,000 to 2,000,000, more preferably 100,000 to 1,500,000. By setting the weight average molecular weight within the preferred range, the viscosity can be reduced and an increase in the melt viscosity can be suppressed.

[0130] The glass transition temperature of the (meth)acrylic copolymer is preferably in the range of -35°C to 50°C, more preferably -10°C to 50°C, even more preferably 0°C to 40°C, and particularly preferably 0°C to 30°C. By setting the glass transition temperature within this preferred range, the viscosity can be reduced, and the formation of voids between the semiconductor wafer and the film adhesive can be suppressed.

[0131] (Polyurethane resin)

[0132] Polyurethane resins are polymers with carbamate (carbamic acid ester) bonds in their main chains. Polyurethane resins may contain structural units derived from polyols, structural units derived from polyisocyanates, or structural units derived from polycarboxylic acids. Polyurethane resins may be used alone or in combination of two or more.

[0133] The Tg of the polyurethane resin is usually 100°C or lower, preferably 60°C or lower, more preferably 50°C or lower, and also preferably 45°C or lower.

[0134] The weight average molecular weight of the polyurethane resin is not particularly limited, but generally, a polyurethane resin within the range of 5,000 to 500,000 is used.

[0135] Polyurethane resins can be synthesized by conventional methods or can be obtained from the market. Examples of commercially available polyurethane resins suitable for use include DYNALEO VA-9320M, DYNALEO VA-9310MF, and DYNALEO VA-9303MF (all manufactured by TOYOCHEM).

[0136] The content of the polymer component (C) per 100 parts by mass of the epoxy resin (A) is preferably 1 to 40 parts by mass, more preferably 5 to 35 parts by mass, and even more preferably 10 to 30 parts by mass. By adjusting the content within this range, the rigidity and flexibility of the thermally conductive film adhesive before curing can be adjusted. This improves the film's state (reduced film viscosity) and also reduces film fragility.

[0137] <Nitride Ceramic Filler (D)>

[0138] The nitride ceramic filler (D) is a nitride ceramic powder and is not particularly limited as long as it satisfies the above-mentioned conditions (1) to (3). The nitride ceramic filler (D) contributes to imparting thermal conductivity to the adhesive composition and the film adhesive.

[0139] Examples of nitride ceramics include aluminum nitride, boron nitride, and silicon nitride. Aluminum nitride is preferred from the perspective of improving thermal conductivity.

[0140] The nitride ceramic filler (D) is preferably a pulverized / crushed product obtained by subjecting the nitride ceramic filler to a pulverization / crushing treatment described later.

[0141] The thermal conductivity of the nitride ceramic filler (D) is not particularly limited, but is preferably 12 W / m·K or higher, more preferably 30 W / m·K or higher, further preferably 50 W / m·K or higher, and even more preferably 100 W / m·K or higher.

[0142] If the thermal conductivity of the nitride ceramic filler (D) is above the preferred lower limit value, the amount of nitride ceramic filler (D) mixed to obtain the target thermal conductivity can be reduced. As a result, the increase in the melt viscosity of the adhesive film can be further suppressed, and the embedding property into the uneven parts of the substrate can be further improved when press-bonded to the substrate, and the generation of voids can be further suppressed.

[0143] In the present invention, the thermal conductivity of the nitride ceramic filler (D) refers to the thermal conductivity at 25° C., and the literature value of each material may be used. Even if not described in the literature, the value measured according to JIS R 1611 may be used instead.

[0144] It should be noted that when the nitride ceramic filler (D) has thermal conductivity anisotropy and exhibits different thermal conductivities in multiple directions, the highest thermal conductivity is taken as the thermal conductivity of the nitride ceramic filler.

[0145] The nitride ceramic filler (D) may also be surface treated or surface modified. Examples of agents or compounds used in such surface treatment or surface modification (collectively referred to as surface treatment agents) include silane coupling agents, phosphoric acid or phosphoric acid compounds, surfactants, and the like. In addition to the matters described in this specification, for example, the description of silane coupling agents, phosphoric acid or phosphoric acid compounds, and surfactants in the section on thermally conductive fillers in International Publication No. 2018 / 203527 or the section on aluminum nitride fillers in International Publication No. 2017 / 158994 may also be applied. It should be noted that when a surface-treated or surface-modified nitride ceramic filler (D) is used in the present invention, the surface-treated or surface-modified state satisfies the conditions (1) to (3) above.

[0146] Examples of methods for mixing the nitride ceramic filler (D) with resin components such as the epoxy resin (A), the epoxy resin curing agent (B), and the polymer component (C) include: a method of directly mixing a powdered nitride ceramic filler and, if necessary, a silane coupling agent, phosphoric acid or a phosphoric acid compound, a surfactant, etc., with the above-mentioned resin components (integral blending method); or a method of dispersing the nitride ceramic filler (D) treated with a surface treatment agent such as a silane coupling agent, phosphoric acid or a phosphoric acid compound, and a surfactant in an organic solvent, and mixing the resulting slurry of the nitride ceramic filler (D) with the above-mentioned resin components; etc.

[0147] The method for treating the nitride ceramic filler (D) with a silane coupling agent, phosphoric acid or a phosphoric acid compound, a surfactant, etc. is not particularly limited, and examples thereof include a wet method in which the nitride ceramic filler (D) is mixed with a silane coupling agent, phosphoric acid or a phosphoric acid compound, a surfactant, etc. in a solvent; a dry method in which the nitride ceramic filler (D) is treated with a silane coupling agent, phosphoric acid or a phosphoric acid compound, a surfactant, etc. in a gas phase; and the above-mentioned overall blending method.

[0148] In particular, while aluminum nitride particles contribute to high thermal conductivity, they readily generate ammonium ions upon hydrolysis. Therefore, they are preferably used in combination with a phenolic resin having low moisture absorption, or their hydrolysis is inhibited by surface modification. Surface modification methods for aluminum nitride particles include providing an aluminum oxide layer on the surface to improve water resistance, and surface treatment with phosphoric acid or a phosphoric acid compound to enhance affinity for the resin. Furthermore, the use of an ion trapping agent is also preferred.

[0149] Silane coupling agents are compounds in which at least one hydrolyzable group, such as an alkoxy group or aryloxy group, is bonded to a silicon atom. In addition, alkyl groups, alkenyl groups, and aryl groups may also be bonded. Alkyl groups are preferably substituted with amino groups, alkoxy groups, epoxy groups, or (meth)acryloyloxy groups, and more preferably substituted with amino groups (preferably phenylamino groups), alkoxy groups (preferably glycidoxy groups), or (meth)acryloyloxy groups.

[0150] Examples of the silane coupling agent include 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, and 3-methacryloxypropyltriethoxysilane.

[0151] The surface treatment agent, such as a silane coupling agent, phosphoric acid or a phosphoric acid compound, or a surfactant, is preferably contained in an amount of 0.1 to 2.0 parts by mass per 100 parts by mass of the nitride ceramic filler (D). This ratio suppresses the aggregation of the nitride ceramic filler (D) while also preventing excess silane coupling agent or surfactant from volatilizing during the semiconductor assembly heating process (e.g., the reflow process) and causing delamination at the bonding interface, thereby improving adhesion.

[0152] In the adhesive composition of the present invention, in addition to the nitride ceramic filler (D), inorganic fillers other than the nitride ceramic filler may be used. Examples of such inorganic fillers include those commonly used in adhesive compositions.

[0153] The nitride ceramic filler preferably accounts for 70% by mass or more of the total filler content, more preferably 80% by mass or more, and even more preferably 90% by mass or more. In the adhesive composition of the present invention, the total amount of filler may be the nitride ceramic filler (D).

[0154] <Other additives>

[0155] The adhesive composition of the present invention may contain, in addition to the epoxy resin (A), epoxy resin curing agent (B), polymer component (C), and nitride ceramic filler (D), further additives such as an organic solvent (such as methyl ethyl ketone (MEK)), an ion scavenger (ion trapping agent), a curing catalyst, a viscosity modifier, an antioxidant, a flame retardant, a colorant, and a stress relaxer such as butadiene rubber or silicone rubber, as long as the effects of the present invention are not impaired. For example, the description of other additives in International Publication No. 2017 / 158994 can be applied.

[0156] The total ratio of the epoxy resin (A), epoxy resin curing agent (B), polymer component (C), and nitride ceramic filler (D) in the adhesive composition of the present invention is not particularly limited as long as the film-like adhesive of the present invention can be obtained, and can be, for example, 60% to 95% by mass, preferably 70% to 90% by mass.

[0157] The adhesive composition of the present invention can be suitably used to obtain the film-like adhesive of the present invention. However, it is not limited to film-like adhesives and can also be suitably used to obtain, for example, liquid adhesives.

[0158] The adhesive composition of the present invention can be obtained by mixing the above-mentioned components at a temperature at which the epoxy resin (A) is not actually cured. The order of mixing is not particularly limited. For example, the resin components such as the epoxy resin (A) and the polymer component (C) can be mixed with a solvent as needed, and then the nitride ceramic filler (D), the epoxy resin curing agent (B) and the silane coupling agent can be mixed. In this case, as long as the mixing can be carried out under the condition that the epoxy resin curing agent (B) is present at a temperature at which the epoxy resin (A) is not actually cured, the mixing of the resin components under the condition that the epoxy resin curing agent (B) is not present can also be carried out at a higher temperature.

[0159] From the perspective of ensuring that the nitride ceramic filler (D) satisfies conditions (1) to (3), the method for producing the adhesive composition of the present invention preferably includes a pulverization / crushing step of the nitride ceramic filler. The pulverization / crushing step may be a step that includes at least one of pulverization or crushing of the nitride ceramic filler. The pulverization / crushing conditions can be appropriately set so that the resulting nitride ceramic filler satisfies conditions (1) to (3).

[0160] The pulverization / crushing treatment can be performed using a pulverizer / crusher such as a jet mill, a bead mill, a hammer mill, or a roller mill.

[0161] The conditions for the pulverization / crushing treatment are appropriately set according to the nitride ceramic filler and the treatment machine used. For example, when using a jet mill, conditions (1) to (3) can be efficiently achieved if the treatment rate is set to 7 kg / hr to 9 kg / hr and the nozzle pressure is set to 0.6 MPa to 0.8 MPa. When using a bead mill, conditions (1) to (3) can be efficiently achieved if the bead material is zirconia-based, the bead particle size is 1.5 mm in diameter, the bead filling rate is 70%, the feed rate is 0.8 L / hr to 1.0 L / hr, the auxiliary agent is ethanol, and the mill peripheral speed is 4.0 m / s.

[0162] <Characteristics of Film Adhesives>

[0163] (Melt viscosity)

[0164] When the film adhesive obtained using the adhesive composition of the present invention (hereinafter also referred to as the film adhesive of the present invention) is heated from 25°C at a rate of 5°C / min, the melt viscosity at 70°C is preferably in the range of 15,000 Pa·s to 50,000 Pa·s. The melt viscosity at 70°C is more preferably in the range of 15,000 Pa·s to 45,000 Pa·s, further preferably in the range of 15,000 Pa·s to 40,000 Pa·s, and particularly preferably in the range of 16,000 Pa·s to 36,000 Pa·s. By setting the melt viscosity at 70°C within the above preferred range, the generation of voids between the semiconductor wafer and the film adhesive can be further reduced when the film adhesive is bonded to a semiconductor wafer.

[0165] Furthermore, when the film adhesive of the present invention is heated from 25°C at a rate of 5°C / min, the melt viscosity at 120°C is preferably in the range of 500 Pa·s to 10,000 Pa·s. The melt viscosity at 120°C is more preferably in the range of 800 Pa·s to 9,000 Pa·s, further preferably in the range of 1,000 Pa·s to 8,000 Pa·s, further preferably in the range of 1,500 Pa·s to 6,000 Pa·s, further preferably in the range of 1,500 Pa·s to 4,000 Pa·s, and particularly preferably in the range of 1,500 Pa·s to 3,000 Pa·s. By setting the melt viscosity at 120°C within the above-mentioned preferred range, when a semiconductor chip provided with the film adhesive is thermally pressed onto a wiring substrate, the generation of voids between the concave and convex portions of the wiring substrate can be further reduced.

[0166] It should be noted that the melt viscosity described above in the present invention is calculated from the melt viscosity at 70°C and 120°C, using a rheometer (trade name: RS6000, manufactured by Haake) to measure the change in viscous resistance of the thermally conductive film adhesive before heat curing at a temperature increase rate of 5°C / min from 25°C to 200°C. The resulting temperature-viscosity resistance curve is used to calculate the melt viscosity at 70°C and 120°C. For specific details, refer to the measurement method described in the Examples.

[0167] Here, the thermally conductive film-like adhesive before heat curing in the measurement of melt viscosity refers to a thermally conductive film-like adhesive that has not been exposed to a temperature condition of 25° C. or higher for one month or longer.

[0168] The melt viscosity can be adjusted to the above range by adjusting the content of the nitride ceramic filler (D) and the type of the nitride ceramic filler (D), as well as the types and contents of coexisting compounds or resins such as the epoxy resin (A), epoxy resin curing agent (B) and polymer component (C).

[0169] (thermal conductivity)

[0170] The film adhesive of the present invention preferably has a thermal conductivity of 1.0 W / m·K or greater after thermal curing. The thermal conductivity is more preferably 1.5 W / m·K or greater. If the thermal conductivity is less than the preferred lower limit, it tends to be difficult to dissipate the generated heat to the outside of the package. The film adhesive of the present invention exhibits this excellent thermal conductivity after thermal curing. Thus, by making the film adhesive of the present invention close to an adherend such as a semiconductor wafer or a wiring substrate and thermally curing it, a semiconductor package with improved heat dissipation efficiency to the outside of the semiconductor package can be obtained.

[0171] The upper limit of the thermal conductivity is not particularly limited, but is practically 7.0 W / m·K or less, more preferably 6.5 W / m·K or less, and even more preferably 5.0 W / m·K or less. Therefore, the thermal conductivity of the film adhesive of the present invention after thermal curing is preferably 1.0 W / m·K to 7.0 W / m·K, more preferably 1.5 W / m·K to 6.5 W / m·K, and even more preferably 1.5 W / m·K to 5.0 W / m·K.

[0172] Here, "after heat curing" in the measurement of thermal conductivity refers to a state where curing of the thermosetting resin is complete, specifically, a state where no reaction heat peak is observed when DSC (differential scanning calorimetry) is performed at a heating rate of 10°C / min.

[0173] It should be noted that, in the present invention, the thermal conductivity of the heat-cured film adhesive refers to the value obtained by measuring the thermal conductivity using a thermal conductivity measuring device (trade name: HC-110, manufactured by Eiko Seiki Co., Ltd.) using the heat flow meter method (in accordance with JIS-A1412). Specifically, the measurement method described in the Examples can be referred to.

[0174] In order to make the thermal conductivity coefficient fall within the above range, in addition to the content of the nitride ceramic filler (D) and the type of the nitride ceramic filler (D), it can also be adjusted by the type and content of the coexisting compounds or resins such as the epoxy resin (A), the epoxy resin curing agent (B) and the polymer component (C).

[0175] Furthermore, the film-like adhesive of the present invention also has insulating properties as a characteristic.

[0176] <<Film-like adhesive and method for producing the same>>

[0177] The thermally conductive film-like adhesive of the present invention is a film-like adhesive obtained from the adhesive composition of the present invention, and comprises the aforementioned epoxy resin (A), epoxy resin curing agent (B), polymer component (C), and nitride ceramic filler (D). In addition, the adhesive composition of the present invention may contain additives other than organic solvents, among those listed as other additives.

[0178] More specifically, the thermally conductive film-like adhesive of the present invention is specified as follows.

[0179] A thermally conductive film adhesive comprising an epoxy resin (A), an epoxy resin curing agent (B), a polymer component (C) and a nitride ceramic filler (D), wherein:

[0180] The nitride ceramic filler (D) satisfies the following conditions (1) to (3),

[0181] The ratio of the nitride ceramic filler (D) to the total content of the epoxy resin (A), the epoxy resin curing agent (B), the polymer component (C), and the nitride ceramic filler (D) is 25 to 65 volume %.

[0182] (1) Image analysis shows that the average particle size is 0.1 μm to 2.5 μm.

[0183] (2) The circularity of the image analysis is 0.7 or higher.

[0184] (3) The maximum particle size determined by image analysis is less than 10.0 μm.

[0185] When the film-like adhesive of the present invention is formed using an adhesive composition containing an organic solvent, the solvent is generally removed from the adhesive composition by drying. Therefore, the solvent content in the film-like adhesive of the present invention is 1000 ppm (ppm is a mass basis) or less, and is generally 0.1 ppm to 1000 ppm.

[0186] Here, in the present invention, "film" refers to a thin film having a thickness of 200 μm or less. Shape, size, etc. other than thickness are not particularly limited and can be appropriately adjusted according to the intended use.

[0187] The film-like adhesive of the present invention is in a state before curing, that is, in a B-stage state.

[0188] The film-like adhesive of the present invention can be suitably used as a die-bonding film in a semiconductor manufacturing process.

[0189] As the film adhesive of the present invention, the thickness is not particularly limited, and is preferably 1 μm to 200 μm. From the perspective of being able to more fully bury the concave and convex parts of the wiring substrate and the surface of the semiconductor chip, it is more preferably 1 μm to 100 μm, further preferably 1 μm to 50 μm, more preferably 1 μm to 40 μm, also preferably 1 μm to 30 μm, also preferably 1 μm to 20 μm, and also preferably 1 μm to 10 μm. The above thickness is also preferably 2 μm or more, and also preferably 3 μm or more (that is, in each preferred range of the above thickness, the lower limit can be 2 μm, and also preferably 3 μm). By controlling the thickness of the film adhesive as described above, for example, when used as a die-bonding film, it is possible to more fully bury the concave and convex parts of the wiring substrate and the surface of the semiconductor chip, and the thermal conductivity can also be excellent. In addition, the organic solvent can be fully removed during manufacturing, and a method of showing moderate film viscosity can be formed.

[0190] The thickness of the film adhesive is a value measured by a contact / linear meter method (table-type contact thickness measuring device).

[0191] The film-like adhesive of the present invention can be formed by preparing the adhesive composition (varnish) of the present invention, applying the composition onto a release-treated substrate film, and drying the film as needed. The adhesive composition usually contains an organic solvent.

[0192] As the release-treated substrate film, any known substrate film can be appropriately used as long as it functions as a cover film for the resulting film-like adhesive. Examples thereof include release-treated polypropylene (PP), release-treated polyethylene (PE), and release-treated polyethylene terephthalate (PET).

[0193] As the coating method, a known method can be appropriately adopted, and examples thereof include methods using a roll knife coater, a gravure coater, a die coater, a reverse coater, and the like.

[0194] Drying may be performed by removing the organic solvent from the adhesive composition to form a film-like adhesive without curing the epoxy resin (A). For example, the composition may be dried by maintaining the composition at a temperature of 80° C. to 150° C. for 1 to 20 minutes.

[0195] The film adhesive of the present invention may be formed solely from the film adhesive of the present invention, or by laminating the aforementioned release-treated substrate film to at least one surface of the film adhesive. Alternatively, the film adhesive may be formed integrally with a wafer-cutting film to form a wafer-cutting / wafer-bonding film. Furthermore, the film adhesive of the present invention may be formed by cutting the film into appropriate sizes or by rolling the film into a roll.

[0196] <<Semiconductor package and manufacturing method thereof>>

[0197] Next, preferred embodiments of the semiconductor package and the method for manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings. It should be noted that in the following description and drawings, the same or corresponding elements are denoted by the same reference numerals to omit repeated descriptions. Figures 1 to 7 It is a schematic longitudinal cross-sectional view showing a preferred embodiment of each step of the method for manufacturing a semiconductor package of the present invention.

[0198] In the method for manufacturing a semiconductor package of the present invention, first, as a first step, Figure 1 As shown, the film-like adhesive (crystal bonding film) of the present invention is hot-pressed on the back side of a semiconductor chip 1 having at least one semiconductor circuit formed on its surface (i.e., the surface of the semiconductor chip 1 on which no semiconductor circuit is formed) to provide an adhesive layer 2 (film-like adhesive 2) (lamination process), and then, a crystal cutting film 3 is provided through the adhesive layer 2 (film-like adhesive 2). Figure 1 In the figure, the film adhesive 2 is shown as being smaller than the sliced ​​film 3, but the size (area) of the two films can be appropriately set depending on the intended purpose. Regarding the conditions for thermocompression bonding, the epoxy resin (A) is not substantially cured by heat. For example, conditions of 70°C and a pressure of 0.3 MPa can be used.

[0199] As the semiconductor wafer 1 , a semiconductor wafer having at least one semiconductor circuit formed on its surface can be appropriately used, and examples thereof include a silicon wafer, a SiC wafer, and a GaS wafer.

[0200] The apparatus used when applying the film-like adhesive 2 of the present invention on the back surface of the semiconductor wafer 1 is not particularly limited, and for example, a known apparatus such as a roll laminator or a hand laminator can be appropriately used.

[0201] In the above description, the die-bonding film and the cut-die film are attached separately. However, when the film adhesive of the present invention is in the form of a cut-die / die-bonding film, the film adhesive and the cut-die film can be attached integrally.

[0202] Next, as the second step, Figure 2 As shown, by simultaneously dicing the semiconductor wafer 1 and the adhesive layer 2 , semiconductor chips 5 with an adhesive layer are obtained on the diced film 3 , each including semiconductor chips 4 obtained by singulating the semiconductor wafer 1 and an adhesive sheet 2 obtained by singulating the film adhesive 2 .

[0203] There is no particular limitation on the dicing film 3 , and a known dicing film can be used as appropriate. Furthermore, there is no particular limitation on the device used for dicing, and a known dicing device can be used as appropriate.

[0204] Next, as the third step, the semiconductor chip with the adhesive layer is peeled off from the above-mentioned cut film. At this time, the cut film can be cured by energy rays as needed to reduce the adhesive force. The peeling can be carried out by picking up the semiconductor chip 5 with the adhesive layer. Figure 3 As shown, the semiconductor chip 5 with the adhesive layer is thermocompression-bonded to the wiring substrate 6 via the adhesive sheet 2 , and the semiconductor chip 5 with the adhesive layer is mounted on the wiring substrate 6 (die bonding step).

[0205] As the wiring board 6 , a substrate having a semiconductor circuit formed on its surface can be appropriately used, and examples thereof include a printed circuit board (PCB), various lead frames, and a substrate having electronic components such as resistors and capacitors mounted on its surface.

[0206] The method for mounting the semiconductor chip 5 with the adhesive layer on the wiring substrate 6 is not particularly limited, and any conventional method that allows the semiconductor chip 5 with the adhesive layer to be bonded to the wiring substrate 6 or an electronic component mounted on the surface of the wiring substrate 6 using the adhesive sheet 2 can be appropriately adopted. Examples of such mounting methods include a method employing a mounting technique using a flip-chip mounter with a heating function from above, a method using a die bonder with a heating function only from below, and a method using a laminator, among other conventionally known heating and pressurizing methods.

[0207] In this way, by mounting the semiconductor chip 5 with the adhesive layer on the wiring substrate 6 via the adhesive sheet 2 composed of the film-like adhesive of the present invention, the adhesive sheet 2 can follow the uneven parts on the wiring substrate 6 caused by the electronic components, thereby making the semiconductor chip 4 and the wiring substrate 6 close and fixed.

[0208] Next, as a fourth step, the adhesive sheet 2 is thermally cured.

[0209] The temperature for heat curing is not particularly limited as long as it is at least the heat curing starting temperature of the film adhesive of the present invention, and can be appropriately set depending on the types of epoxy resin (A), polymer component (C), and epoxy resin curing agent (B) used. For example, it is preferably 100°C to 180°C, and more preferably 140°C to 180°C from the perspective of achieving a shorter curing time. If the temperature is lower than the heat curing starting temperature, heat curing will not proceed sufficiently, and the strength of the adhesive layer 2 will tend to decrease. On the other hand, if the temperature exceeds the upper limit, the epoxy resin, curing agent, or additives in the film adhesive will volatilize during the curing process, causing foaming.

[0210] The curing treatment time is preferably, for example, 10 minutes to 120 minutes.

[0211] In the method for manufacturing a semiconductor package of the present invention, Figure 4 As shown, the wiring substrate 6 and the semiconductor chip 5 with the adhesive layer are preferably connected via bonding wires 7. There is no particular limitation on the connection method, and conventionally known methods such as wire bonding and TAB (Tape Automated Bonding) can be appropriately adopted.

[0212] Alternatively, two or more semiconductor chips 4 may be laminated by thermocompression bonding and heat curing another semiconductor chip 4 on the surface of the mounted semiconductor chip 4 and then connecting it to the wiring substrate 6 by wire bonding. Figure 5 A method of stacking semiconductor chips by staggering them as shown; or Figure 6 As shown in FIG. 1 , a method of laminating while burying the bonding wires 7 by making the adhesive sheet 2 thicker after the second layer; and the like.

[0213] In the method for manufacturing a semiconductor package of the present invention, it is preferred that Figure 7 As shown, wiring board 6 and semiconductor chip 5 with an adhesive layer are encapsulated with encapsulating resin 8 to obtain semiconductor package 9. Encapsulating resin 8 is not particularly limited, and any known encapsulating resin that can be used for manufacturing semiconductor packages can be used as appropriate. Furthermore, the encapsulation method using encapsulating resin 8 is also not particularly limited, and any known method can be used as appropriate.

[0214] The semiconductor package of the present invention is manufactured by the above-mentioned method for manufacturing a semiconductor package, and the semiconductor chip and the wiring board, or at least one location between the semiconductor chips, are bonded via the thermosetting body of the film-like adhesive of the present invention.

[0215] Example

[0216] The present invention will be described in more detail below based on Examples and Comparative Examples, but the present invention is not limited to the following Examples. Room temperature refers to 25° C., MEK is methyl ethyl ketone, IPA is isopropyl alcohol, and PET is polyethylene terephthalate.

[0217] <Measurement of Image Analysis Average Particle Size, Image Analysis Circularity, and Image Analysis Maximum Particle Size of Nitride Ceramic Filler>

[0218] Proceed as described above.

[0219] <Measurement of Specific Surface Area>

[0220] 0.8 g of each nitride ceramic filler was heat-dried in an oven at 200° C. / 10 minutes, and the specific surface area was measured using a BET single-point method with a mixed gas of He:N 2 = 3:7 using a Macsorb Model HM-1210.

[0221] <Measurement of Melt Viscosity>

[0222] A square measuring 5.0 cm long x 5.0 cm wide was cut from the film-like adhesive with release film obtained in each Example and Comparative Example. The release film was removed and the adhesive was laminated. The laminate was then bonded using a hand roller on a hot plate at 70°C to obtain a test piece with a thickness of approximately 1.0 mm. The test piece was measured using a rheometer (RS6000, manufactured by Haake) with the temperature increased from 25°C to 250°C at a rate of 5°C / min. The change in viscous resistance was measured. The melt viscosity (Pa·s) at 70°C and 120°C was calculated from the resulting temperature-viscosity resistance curves.

[0223] <Laminatability Evaluation>

[0224] The film-like adhesives with release films obtained in each of the Examples and Comparative Examples were first bonded to one surface of a dummy silicon wafer (8-inch size, 50 μm thickness) using a manual laminator (trade name: FM-114, manufactured by TECHNOVISION) at 70°C and a pressure of 0.1 MPa or 0.3 MPa. The interface between the film-like adhesive and the wafer was visually observed from the film-like adhesive side to determine the presence of voids. Laminar performance was evaluated based on the following evaluation criteria. A pressure of 0.1 MPa was more likely to produce voids than a pressure of 0.3 MPa.

[0225] -Evaluation Criteria-

[0226] AA: No voids were observed under a pressure of 0.1 MPa.

[0227] A: One or more voids were observed under a pressure of 0.1 MPa, but no voids were observed under a pressure of 0.3 MPa.

[0228] B: 1 to 4 voids were observed under a pressure of 0.3 MPa.

[0229] C: Five or more voids were observed under a pressure of 0.3 MPa.

[0230] <Wear Amount Evaluation>

[0231] The film adhesive with release film obtained in each example and comparative example was first bonded to a dummy silicon wafer (8-inch size, 100 μm thickness) using a manual laminator (trade name: FM-114, manufactured by TECHNOVISION) at a temperature of 70°C and a pressure of 0.3 MPa. The release film was then peeled from the film adhesive, and a dicing film (trade name: K-13, manufactured by Furukawa Electric Co., Ltd.) and a dicing frame (trade name: DTF2-8-1H001, manufactured by DISCO) were bonded to the side of the film adhesive opposite the dummy silicon wafer using the same manual laminator at room temperature and a pressure of 0.3 MPa. A cutting device (trade name: DFD-6340, manufactured by DISCO) equipped with a dual-axis dicing blade (Z1: NBC-ZH2030-SE (DD), manufactured by DISCO, Z2: NBC-ZH127F-SE (BB), manufactured by DISCO) was used to cut with a size of 1.0 mm × 1.0 mm under the following processing conditions. This cutting process was repeated until the length of the film adhesive reached 150 m. The setting was implemented before cutting (before processing) and at the time of cutting 150 m (after processing), and the amount of blade tip protrusion was measured by non-contact (laser type) to calculate the amount of blade wear after processing (the amount of blade tip protrusion before processing - the amount of blade tip protrusion after processing). The calculated amount was evaluated according to the following evaluation criteria.

[0232] -Processing conditions-

[0233] Cutting depth in the wafer film: 30 μm

[0234] Cutting speed: 30mm / sec

[0235] Speed: 40000rpm

[0236] -Evaluation Criteria-

[0237] AA: wear loss less than 10μm

[0238] A: Wear loss is 10 μm or more and less than 20 μm

[0239] B: Wear loss is 20 μm or more and less than 30 μm

[0240] C: Wear loss is 30μm or more

[0241] <Evaluation of Adhesive Properties>

[0242] The film adhesive with release film obtained in each of the Examples and Comparative Examples was first bonded to one surface of a dummy silicon wafer (8-inch size, 100 μm thickness) using a manual laminator (trade name: FM-114, manufactured by TECHNOVISION) at 70°C and a pressure of 0.3 MPa. The release film was then peeled from the film adhesive. A dicing film (trade name: K-13, manufactured by Furukawa Electric Co., Ltd.) and a dicing frame (trade name: DTF2-8-1H001, manufactured by DISCO) were then bonded to the surface of the film adhesive opposite the dummy silicon wafer using the same manual laminator at room temperature and a pressure of 0.3 MPa. Next, a cutting device (trade name: DFD-6340, manufactured by DISCO) equipped with a dual-axis dicing blade (Z1: NBC-ZH2050 (27HEDD), manufactured by DISCO, Z2: NBC-ZH127F-SE (BC), manufactured by DISCO) is used to cut the dummy silicon wafer from the side in a manner to form a size of 10 mm × 10 mm to obtain dummy chips.

[0243] Next, a die bonder (trade name: DB-800, manufactured by Hitachi High-Technologies Corporation) was used to pick up the dummy die with film adhesive from the cut wafer film. The die was then thermocompressed at 120°C, a pressure of 0.05 MPa (load 200 gf) or 0.1 MPa (load 400 gf), and a time of 1.0 second, with the film adhesive side of the dummy die bonded to the mounting surface of a lead frame substrate (42 Alloy, manufactured by Toppan Printing Co., Ltd.). The mounting surface of the lead frame substrate was a slightly roughened metal surface.

[0244] The dummy chip with the film adhesive bonded to the substrate by thermocompression was inspected for voids at the interface between the film adhesive and the lead frame substrate using an ultrasonic flaw detector (SAT) (FS300III manufactured by Hitachi Power Solutions). Die bonding was evaluated based on the following evaluation criteria.

[0245] -Evaluation Criteria-

[0246] AA: No voids were observed in any of the 24 semiconductor chips mounted at a pressure of 0.05 MPa.

[0247] A: Does not meet the above AA, but no voids are observed in all 24 semiconductor chips mounted under a pressure of 0.1 MPa.

[0248] B: Does not meet the above AA and A, but voids are observed in 1 to 3 of the 24 semiconductor chips mounted under a pressure of 0.1 MPa.

[0249] C: Does not meet the above AA, A, and B, but voids are observed in 4 or more semiconductor chips among the 24 semiconductor chips mounted under a pressure of 0.1 MPa.

[0250] <Thermal Conductivity Evaluation>

[0251] A square piece with a side of 50 mm or more was cut out from the film-like adhesive with a release film obtained in each of Examples and Comparative Examples. The square pieces were stacked with the release film peeled off to obtain a sample with a thickness of 5 mm.

[0252] This sample was placed in a disc-shaped mold with a diameter of 50 mm and a thickness of 5 mm. It was heated at 150°C and a pressure of 2 MPa for 10 minutes using a compression press. After removal, it was further heated in a dryer at 180°C for 1 hour to thermally cure the film adhesive. This yielded a disc-shaped test piece with a diameter of 50 mm and a thickness of 5 mm.

[0253] The thermal conductivity (W / (m·K)) of the test piece was measured by a heat flow meter method (in accordance with JIS-A1412) using a thermal conductivity measuring device (trade name: HC-110, manufactured by Eiko Seiki Co., Ltd.).

[0254] <Preparation of Nitride Ceramic Filler>

[0255] The particle size and other properties of the nitride ceramic filler used in each of the Examples and Comparative Examples were controlled by pulverizing and crushing the nitride ceramic filler under the following conditions.

[0256] (Nitride ceramic filler)

[0257] AlN1: HF-01 (trade name), aluminum nitride, manufactured by Tokuyama Corporation

[0258] AlN2: A-01-F-WR2 (trade name), aluminum nitride, manufactured by MARUWA

[0259] AlN3: TFZ-A02P (trade name), aluminum nitride, manufactured by Toyo Aluminum Co., Ltd.

[0260] AlN4: H-grade (trade name), aluminum nitride, manufactured by Tokuyama Corporation

[0261] BN1: UHP-S1 (trade name), boron nitride filler, manufactured by Showa Denko K.K.

[0262] (Crushing / crushing)

[0263] 10 kg of each of the above nitride ceramic fillers was fed into a flat feeder (Model: S, manufactured by Seishin Enterpris Co., Ltd.) and pulverized / crushed using a jet mill pulverizer / crusher (Model: FS-4, manufactured by Seishin Enterprise Co., Ltd.) at a throughput of 8.0 kg / hr and a nozzle pressure of 0.7 MPa.

[0264] The image analysis average particle size, image analysis circularity, image analysis maximum particle size, and specific surface area of ​​each nitride ceramic filler before and after the pulverization / crushing treatment are summarized in Table 1 below.

[0265] [Table 1]

[0266] Table 1

[0267]

[0268] For convenience, the following descriptions distinguish between the nitride ceramic fillers before and after the pulverization / crushing process by appending "a" and "b," respectively, to the above symbols. For example, "AlN1" before pulverization / crushing is referred to as "AlN1a," and "AlN1" after pulverization / crushing is referred to as "AlN1b."

[0269] <Examples and Comparative Examples>

[0270] The adhesive compositions and film-like adhesives of Examples and Comparative Examples were obtained as follows.

[0271] (Example 1)

[0272] 55.5 parts by mass of a cresol novolac-type epoxy resin (trade name: EOCN-104S, weight-average molecular weight: 5000, softening point: 92°C, solid, epoxy equivalent: 218 g / eq, manufactured by Nippon Kayaku Co., Ltd.), 48.5 parts by mass of a bisphenol A-type epoxy resin (trade name: YD-128, weight-average molecular weight: 400, softening point: less than 25°C, liquid, epoxy equivalent: 190 g / eq, manufactured by Shin Nichika Epoxy Manufacturing Co., Ltd.), and 120 parts by mass of a polyurethane resin solution (trade name: DYNALEO VA-9310MF, weight-average molecular weight: 120,000, Tg: 39°C, solvent: MEK / IPA mixed solvent, manufactured by Toyochem Co., Ltd.) (30 parts by mass as polyurethane resin) were heated and stirred at 110°C for 2 hours in a 1000 ml separable flask to obtain a resin varnish.

[0273] Next, the resin varnish was transferred to an 800 ml planetary mixer, 252 parts by mass of AlN1b (HF-01 after crushing / crushing treatment) as a nitride ceramic filler was added, 2.0 parts by mass of an epoxy resin curing agent (trade name: 2PHZ-PW, imidazole-type curing agent, manufactured by Shikoku Chemicals Co., Ltd.) and 3.0 parts by mass of a silane coupling agent (trade name: S-510, manufactured by JNC Corporation) were added, and after stirring and mixing at room temperature for 1 hour, vacuum degassing was performed to obtain a mixed varnish (adhesive composition).

[0274] The resulting mixed varnish was then applied to a 38 μm thick release-treated PET film (release film) and dried by heating at 130°C for 10 minutes to form a film-like adhesive having a length of 300 mm, a width of 200 mm, and a thickness of 10 μm. Thus, a film-like adhesive with a release film was obtained.

[0275] (Example 2)

[0276] In Example 1, the adhesive composition and the film-like adhesive with a release film of Example 2 were obtained in the same manner as in Example 1, except that 120 parts by mass (30 parts by mass as acrylic resin) of an acrylic polymer solution (trade name: S-2060, weight-average molecular weight: 500,000, Tg: -23°C, solid content 25% (organic solvent: toluene), manufactured by Toagosei Co., Ltd.) was used instead of the polyurethane resin solution.

[0277] (Example 3)

[0278] In Example 1, 85 parts by mass (30 parts by mass as phenoxy resin) of a bisphenol A-type phenoxy resin solution (trade name: YP-50EK35, weight-average molecular weight: 70,000, Tg: 84°C, solid content 35% (organic solvent: MEK), manufactured by Nippon Steel Epoxy Manufacturing Co., Ltd.) were used instead of the polyurethane resin solution. The adhesive composition and the film-like adhesive with a release film of Example 3 were obtained in the same manner as in Example 1, except that the above-mentioned conditions were met.

[0279] (Example 4)

[0280] An adhesive composition and a film-like adhesive with a release film of Example 4 were obtained in the same manner as in Example 1 except that 700 parts by mass of AlN1b (HF-01 after the crushing / disintegration treatment) was used.

[0281] (Example 5)

[0282] An adhesive composition and a film-like adhesive with a release film of Example 5 were obtained in the same manner as in Example 1 except that 126 parts by mass of AlN1b (HF-01 after the crushing / disintegration treatment) was used.

[0283] (Example 6)

[0284] In Example 1, the adhesive composition and the film-like adhesive with a release film of Example 6 were obtained in the same manner as in Example 1 except that 252 parts by mass of AlN2b (A-01-F-WR2 after pulverization / crushing) was used instead of AlN1b.

[0285] (Example 7)

[0286] In Example 1, except that 252 parts by mass of AlN3b (TFZ-A02P after crushing / disintegration treatment) was used instead of AlN1b, an adhesive composition and a film-like adhesive with a release film of Example 7 were obtained in the same manner as in Example 1.

[0287] (Example 8)

[0288] In Example 1, the adhesive composition and the film-like adhesive with a release film of Example 8 were obtained in the same manner as in Example 1 except that 178 parts by mass of BN1b (UHP-S1 after pulverization / crushing treatment) was used instead of AlN1b.

[0289] (Comparative Example 1)

[0290] In Example 1, an adhesive composition and a film-like adhesive with a release film of Comparative Example 1 were obtained in the same manner as in Example 1 except that 252 parts by mass of AlN1a (HF-01 before pulverization / crushing) was used instead of AlN1b.

[0291] (Comparative Example 2)

[0292] An adhesive composition and a film-like adhesive with a release film of Comparative Example 2 were obtained in the same manner as in Example 1 except that 880 parts by mass of AlN1b (HF-01 after the crushing / disintegration treatment) was used.

[0293] (Comparative Example 3)

[0294] An adhesive composition and a film-like adhesive with a release film of Comparative Example 3 were obtained in the same manner as in Example 1 except that 95 parts by mass of AlN1b (pulverized / crushed HF-01) was used.

[0295] (Comparative Example 4)

[0296] In Example 6, except that 252 parts by mass of AlN2a (A-01-F-WR2 before pulverization / crushing) was used instead of AlN2b, the adhesive composition and the film-like adhesive with a release film of Comparative Example 4 were obtained in the same manner as in Example 6.

[0297] (Comparative Example 5)

[0298] In Example 7, except that 252 parts by mass of AlN3a (TFZ-A02P before pulverization / crushing treatment) was used instead of AlN3b, the adhesive composition and the film-like adhesive with a release film of Comparative Example 5 were obtained in the same manner as in Example 7.

[0299] (Comparative Example 6)

[0300] In Example 8, except that 178 parts by mass of BN1a (UHP-S1 before pulverization / crushing treatment) was used instead of BN1b, the adhesive composition and the film-like adhesive with a release film of Comparative Example 6 were obtained in the same manner as in Example 8.

[0301] (Comparative Example 7)

[0302] In Example 1, except that 335 parts by mass of AlN4a (H grade before pulverization / crushing treatment) was used instead of AlN1b, an adhesive composition and a film-like adhesive with a release film of Comparative Example 7 were obtained in the same manner as in Example 1.

[0303] The obtained film-like adhesive with a release film was subjected to measurement of melt viscosity, evaluation of lamination properties, evaluation of wear amount, evaluation of die bonding properties, and evaluation of thermal conductivity as described above.

[0304] The obtained results are summarized in Table 2 below, together with the compositions of the adhesive compositions and the film-like adhesives.

[0305]

[0306]

[0307]

[0308] Blank spaces in the "polymer component" and "nitride ceramic filler" columns mean that the component is not contained.

[0309] The “total solid content” is the total amount (parts by mass) of the epoxy resin, the polymer component, the nitride ceramic filler, the epoxy resin curing agent, and the silane coupling agent.

[0310] The “epoxy resin content” is the content (parts by mass) of the epoxy resin based on 100 parts by mass of the total content of the components (epoxy resin, polymer component, nitride ceramic filler, epoxy resin curing agent, silane coupling agent) constituting the film adhesive.

[0311] The “filling amount of the nitride ceramic filler (vol %)” is the ratio (vol %) of the nitride ceramic filler to the total content of the epoxy resin, the epoxy resin curing agent, the polymer component, and the nitride ceramic filler.

[0312] The following can be seen from Table 2 above.

[0313] The adhesive compositions of Comparative Examples 1 and 4 to 7 used nitride ceramic fillers that did not satisfy at least any one of the conditions (1) to (3). For the film-like adhesives with a thickness of 10 μm obtained from these adhesive compositions, voids were observed during bonding to a wafer under a pressure of 0.3 MPa (lamination process) and bonding to a lead frame substrate under a pressure of 0.1 MPa (die bonding process). It is believed that voids were formed because the nitride ceramic filler contained coarse particles or agglomerates. In Comparative Example 5, the wear amount of the processing blade was more than 20 μm. It is believed that the wear of the processing blade was severe because a nitride ceramic filler that did not satisfy any of the conditions (1) to (3) was used.

[0314] Comparative Examples 2 and 3 are adhesive compositions that use nitride ceramic fillers that meet conditions (1) to (3), but whose content does not meet the range of 25% to 65% by volume. For the film adhesive obtained from the adhesive composition of Comparative Example 2, voids were observed during bonding to a wafer under a pressure of 0.3 MPa (lamination process) and bonding to a lead frame substrate under a pressure of 0.1 MPa (die bonding process). It is believed that voids are easily generated due to an increase in melt viscosity. In the film adhesive obtained from the adhesive composition of Comparative Example 3, the thermal conductivity was as low as 0.8 W / m·K, and the thermal conductivity was poor. It is believed that the reason for this is that the filling amount of the nitride ceramic filler is too small.

[0315] In contrast, the adhesive compositions of Examples 1 to 8 use nitride ceramic fillers that satisfy all of conditions (1) to (3). For the film-like adhesives with a thickness of 10 μm obtained from these adhesive compositions, no voids were observed when bonding to a wafer under a pressure of 0.3 MPa (lamination process) and when bonding to a lead frame substrate under a pressure of 0.1 MPa (die bonding process). In addition, all cured products showed excellent thermal conductivity of more than 1.0 W / m·K, and the wear of the processing blade was suppressed to less than 20 μm. Thus, it can be seen that the adhesive composition according to the present invention, even when made into a thin film, can suppress the generation of voids when laminating to a wafer and when die bonding, and exhibits excellent thermal conductivity, thereby suppressing the wear of the processing blade.

[0316] Among them, it was found that voids can be further suppressed when the melt viscosity at 70° C. is within the range of 16,000 Pa·s to 36,000 Pa·s, or when the melt viscosity at 120° C. is within the range of 1,500 Pa·s to 3,000 Pa·s.

[0317] The present invention has been described in conjunction with its embodiments, but the applicant believes that unless otherwise specified, the present invention is not limited to any details in the description and should be broadly interpreted without violating the spirit and scope of the invention as shown in the appended claims.

[0318] This application claims the benefit of priority based on Japanese Patent Application No. 2023-029805, filed in Japan on February 28, 2023, the entirety of which is hereby incorporated by reference as a part of the present specification.

[0319] Explanation of symbols

[0320] 1 semiconductor wafer

[0321] 2 Film adhesive

[0322] 3. Cutting film

[0323] 4Semiconductor chips

[0324] 5Semiconductor chip with adhesive layer

[0325] 6 Wiring board

[0326] 7 bonding wires

[0327] 8. Encapsulation resin

[0328] 9Semiconductor packaging

Claims

1. A thermally conductive adhesive composition comprising an epoxy resin (A), an epoxy resin curing agent (B), a polymer component (C), and a nitride ceramic filler (D), wherein: The nitride ceramic filler (D) satisfies the following conditions (1) to (3), The ratio of the nitride ceramic filler (D) to the total content of the epoxy resin (A), the epoxy resin curing agent (B), the polymer component (C) and the nitride ceramic filler (D) is 25 volume % to 65 volume %, (1) The average particle size by image analysis is 0.1 μm to 2.5 μm; (2) The circularity of the image analysis is 0.7 or above; (3) The maximum particle size determined by image analysis is less than 10.0 μm.

2. The thermally conductive adhesive composition according to claim 1, wherein When the film-like adhesive obtained from the adhesive composition is heated from 25° C. at a rate of 5° C. / min, the melt viscosity at 70° C. is 15,000 Pa·s to 50,000 Pa·s.

3. The thermally conductive adhesive composition according to claim 1 or 2, wherein When the film-like adhesive obtained from the adhesive composition is heated from 25° C. at a rate of 5° C. / min, the melt viscosity at 120° C. is 500 Pa·s to 10,000 Pa·s.

4. The thermally conductive adhesive composition according to any one of claims 1 to 3, wherein The film-like adhesive obtained from the adhesive composition provides a cured product having a thermal conductivity of 1.0 W / m·K or more after thermal curing.

5. The thermally conductive adhesive composition according to any one of claims 1 to 4, wherein The nitride ceramic filler (D) is a pulverized / crushed product.

6. The method for producing the thermally conductive adhesive composition according to any one of claims 1 to 5, comprising: The nitride ceramic filler is subjected to a pulverization / crushing treatment to obtain the nitride ceramic filler (D) satisfying the above conditions (1) to (3), and the thermally conductive adhesive composition is obtained using the nitride ceramic filler (D). 7 . A thermally conductive film-like adhesive obtained from the thermally conductive adhesive composition according to claim 1 . The thermally conductive film-like adhesive according to claim 7 , which has a thickness of 1 μm to 10 μm. 9 . A die-cut / die-bonding film, comprising a die-cut film and the thermally conductive film-like adhesive according to claim 7 or 8 laminated together.

10. A semiconductor package comprising a semiconductor chip and a wiring board, or semiconductor chips bonded together via a thermosetting body of the thermally conductive film-like adhesive according to claim 7 or 8.

11. A method for manufacturing a semiconductor package, comprising: In a first step, the thermally conductive film-like adhesive according to claim 7 or 8 is thermally pressed onto the back surface of a semiconductor wafer having at least one semiconductor circuit formed on the surface thereof to form an adhesive layer, and a wafer-cutting film is formed via the adhesive layer. a second step of integrally dicing the semiconductor wafer and the adhesive layer to obtain a semiconductor chip with an adhesive layer having an adhesive sheet and a semiconductor chip on the diced film; a third step of peeling the semiconductor chip with the adhesive layer from the diced film, and thermocompression-bonding the semiconductor chip with the adhesive layer to a wiring substrate via the adhesive sheet; and In the fourth step, the adhesive layer is thermally cured.

12. The method for manufacturing a semiconductor package according to claim 11, wherein: The first step is a step of thermocompression bonding the die-cutting / bonding film according to claim 9 to the back surface of the semiconductor wafer.

Images