Silicon carbide crystal growth method and device

Abstract

The embodiment of the invention provides a silicon carbide crystal growth method and device, and the silicon carbide crystal growth device grows silicon carbide crystals based on the silicon carbide crystal growth method, and relates to the technical field of silicon carbide crystal growth. According to the silicon carbide crystal growth method provided by the embodiment of the invention, when the crucible is exhausted, the seed crystal is isolated from the inner cavity of the crucible, and at the moment, the seed crystal is located outside the crucible. In the preheating process, impurities in the crystal growth raw materials rise along with gas in a high-temperature environment, and the impurities can be pumped out due to the fact that gas is pumped out of the crucible, so that the discharge efficiency of the impurities can be improved. Therefore, the impurity can be prevented from being adhered to the seed crystal to influence the crystal growth, so that the crystal growth quality can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon carbide crystal growth, and in particular to a method and device for growing silicon carbide crystals. Background Art

[0002] Silicon carbide (SiC), as an emerging third-generation semiconductor core material, has excellent properties such as wide bandgap, high critical breakdown electric field strength, high electron mobility, good radiation resistance and chemical stability. This makes it an important substrate wafer material with wide applications and shows good application prospects in aviation devices, new energy vehicles, rail transportation and household appliances.

[0003] Some existing silicon carbide crystal growth devices typically evacuate the crucible before crystal growth begins to remove impurities. However, during the evacuation process, impurities in the crucible may flow with the gas and adhere to the seed crystal, preventing extraction. During the crystal growth process, volatilized impurities may also adhere to the seed crystal, affecting the quality of subsequent crystal growth on the seed crystal. Summary of the Invention

[0004] The present invention aims to provide a method for growing silicon carbide, which can prevent impurities from adhering to seed crystals and affecting crystal growth, thereby improving the quality of crystal growth.

[0005] The embodiments of the present invention can be implemented as follows: In a first aspect, the present invention provides a method for growing a silicon carbide crystal, the method comprising: Isolate the seed crystal from the inner cavity of the crucible so that the airflow and particles in the crucible do not contact the seed crystal; Heating the crucible to a first preset temperature to preheat the raw material, and evacuating and exhausting the crucible; Remove the isolation between the seed crystal and the inner cavity of the crucible, so that the gas phase formed by the sublimation of the raw material can grow on the seed crystal; heating the crucible to a second predetermined temperature to grow a crystal on the seed crystal; The second preset temperature is greater than the first preset temperature.

[0006] In an optional embodiment, before the step of isolating the seed crystal from the inner cavity of the crucible, the method further comprises: The seed crystal is placed in the inner cavity of the crucible, and the crucible is placed in an insulation chamber; Vacuum the holding chamber.

[0007] In an optional embodiment, the step of heating the crucible to a first preset temperature to preheat the raw material and evacuating the crucible includes: After the crucible is evacuated, the preset gas is then filled into the crucible.

[0008] In an optional embodiment, the preset gas is an inert gas.

[0009] In a second aspect, the present invention provides a silicon carbide crystal growth apparatus for growing silicon carbide crystals using the silicon carbide crystal growth method of any one of the aforementioned embodiments, comprising: Crucible, crucible cover, lifting module, turning module, exhaust module and charging module, the crucible cover includes a first side and a second side opposite to each other, and the first side is provided with a seed crystal; The turning module is connected to the crucible cover to drive the crucible cover to turn over; The lifting module is used to move the crucible and the crucible cover away from or closer to each other in the axial direction; The gas extraction module and the gas charging module are both communicated with the crucible.

[0010] In an optional embodiment, the flip module includes a base, a driving member, a rack, a first bracket and a second bracket. The first bracket and the second bracket are spaced apart from the base and located on both sides of the crucible. The driving member is connected to the rack to drive the rack to move axially on the first bracket. A first rod and a second rod are provided on the outer periphery of the crucible cover. A gear meshing with the rack is provided on the first rod. The second rod rotates with the second bracket. The lifting module is connected to the base to drive the base to move axially.

[0011] In an optional embodiment, the silicon carbide crystal growth device further includes an insulation chamber, the crucible and the crucible cover are located in the insulation chamber, the driving member and the base are both located outside the insulation chamber, and the first bracket, the second bracket and the rack all extend into the insulation chamber.

[0012] In an optional embodiment, the silicon carbide crystal growth apparatus includes a plurality of sequentially arranged insulation chambers, and two adjacent insulation chambers are separated by a movable partition that can be pulled out of the insulation chamber.

[0013] In an optional embodiment, a matching groove is provided at the open end of the crucible, and matching protrusions are provided on the first side and the second side of the crucible cover, and the matching protrusions match with the matching groove.

[0014] The beneficial effects provided by the embodiments of the present invention include: the embodiments of the present invention provide a silicon carbide crystal growth method and a silicon carbide crystal growth device, the silicon carbide crystal growth device grows silicon carbide crystals based on the silicon carbide crystal growth method, and the embodiments of the present invention provide a silicon carbide crystal growth method, wherein when the crucible is evacuated, the seed crystal is located outside the crucible. During the preheating process, impurities in the crystal growth raw material rise with the gas in a high-temperature environment. Since the crucible is evacuated, the impurities can be extracted. Therefore, impurities can be prevented from adhering to the seed crystal and affecting crystal growth, thereby improving the quality of crystal growth. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments. It should be understood that the following drawings only show some of the embodiments of the present application, and therefore should not be regarded as a limitation to the scope. For those skilled in the art, other related drawings can also be obtained without creative labor.

[0016] Figure 1 The second side cover of the crucible cover in the silicon carbide crystal growth device provided by the embodiment of the present application is combined with the structure schematic diagram of the crucible. Figure 2 The structure schematic diagram of the crucible cover and the crucible in the silicon carbide crystal growth device provided by the embodiment of the present application is separated in the axial direction. Figure 3 The first side of the crucible cover in the silicon carbide crystal growth device provided by the embodiment of the present application is directed to the structure schematic diagram of the crucible. Figure 4 The first side cover of the crucible cover in the silicon carbide crystal growth device provided by the embodiment of the present application is combined with the structure schematic diagram of the crucible. Figure 5 The structure schematic diagram of the silicon carbide crystal growth device provided by the embodiment of the present application has two heat preservation chambers.

[0017] Figure: 1-silicon carbide crystal growth device; 100-crucible; 101-matching groove; 200-crucible cover; 201-first side; 202-second side; 203-seed crystal; 210-first rod; 220-second rod; 230-gear; 240-matching protrusion; 300-heat preservation chamber; 310-movable partition; 400-flip module; 410-first support; 420-second support; 430-base; 440-driving member; 450-rack; 500-inflation module; 510-inflation pipeline; 600-pumping module; 610-pumping pipeline. DETAILED DESCRIPTION

[0018] In order to make the purpose, technical solutions and advantages of the embodiments of the present application more clear, the following will combine the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are some of the embodiments of the present application, not all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0019] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort are intended to fall within the scope of protection of the present invention.

[0020] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0021] In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. appear, the orientation or position relationship indicated is based on the orientation or position relationship shown in the accompanying drawings, or is the orientation or position relationship in which the product of the invention is usually placed when in use. It is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be understood as a limitation on the present invention.

[0022] In addition, the terms "first", "second", etc., if used, are merely used to distinguish and describe, and should not be understood as indicating or implying relative importance.

[0023] It should be noted that, in the absence of conflict, the features in the embodiments of the present invention may be combined with each other.

[0024] An embodiment of the present invention provides a method for growing a silicon carbide crystal, the method comprising: Please refer to Figure 1 , isolating the seed crystal 203 from the inner cavity of the crucible 100 so that the airflow and particles in the crucible 100 will not contact the seed crystal 203 .

[0025] It should be noted that the crucible cover 200 generally includes a first side 201 and a second side 202 relative to each other. The first side 201 of the crucible cover 200 is provided with a seed crystal 203. The isolation of the seed crystal 203 from the inner cavity of the crucible 100 can be understood as that the second side 202 of the crucible cover 200 covers the crucible 100 so as to isolate the seed crystal 203 on the first side 201 of the crucible cover 200 from the inner cavity of the crucible 100.

[0026] The crucible 100 is heated to a first preset temperature to preheat the raw material, and the crucible 100 is evacuated. It is understood that during the process of evacuating the crucible 100, impurities in the crucible 100 can be extracted.

[0027] Of course, in order to ensure that the crucible 100 has a relatively stable pressure after evacuation, it is necessary to inject a preset gas into the crucible 100 .

[0028] Please refer to Figure 2-Figure 4 , removing the isolation between the seed crystal 203 and the inner cavity of the crucible 100 so that the gas phase formed by the sublimation of the raw material can grow on the seed crystal 203 , and heating the crucible 100 to a second preset temperature to grow on the seed crystal 203 .

[0029] It can be understood that after the raw materials are preheated, since the seed crystal 203 is isolated from the inner cavity of the crucible 100, the volatilized impurities will not adhere to the seed crystal 203, and the impurities can be extracted from the crucible 100 during the vacuum process, thereby cleaning the crucible 100 and avoiding the growth quality of the silicon carbide crystal being affected by the volatilization of solid impurities and adhering to the seed crystal 203.

[0030] After the crucible 100 is cleaned, the seed crystal 203 and the crucible 100 can be released from isolation, and the first side 201 of the crucible cover 200 can be closed on the crucible 100 .

[0031] The crucible 100 is heated to a second preset temperature, so that the crystal growth material in the crucible 100 is sublimated, so that silicon carbide crystals grow on the seed crystals 203 on the crucible cover 200 .

[0032] It should be noted that the second preset temperature is in the crystal growth temperature range, and the second preset temperature is greater than the first preset temperature.

[0033] The inventors have discovered that during the crystal growth process, the silicon carbide raw material also contains impurities that affect the growth quality of the silicon carbide crystal. Some existing silicon carbide crystal growth devices are vacuum-processed, and the impurities in the crucible 100 may adhere to the seed crystal 203 with the flow of gas and cannot be extracted, thereby affecting the growth quality of subsequent crystals on the seed crystal 203.

[0034] It will be appreciated that in the embodiment of the present invention, when crucible 100 is being evacuated, seed crystal 203 is located outside crucible 100. Crucible 100 is heated to a first predetermined temperature to preheat the crystal growth material within. During the preheating process, impurities within the crystal growth material rise with the gas in the high-temperature environment. Due to the evacuation of crucible 100, these impurities are extracted. This prevents impurities from adhering to seed crystal 203 and affecting crystal growth, thereby improving crystal growth quality.

[0035] It should be noted that the preset gas in this embodiment is an inert gas. For example, the preset gas can be argon. Of course, the preset gas can also be a mixture of an inert gas and a dopant gas.

[0036] It should be noted that in this embodiment, in order to provide a relatively stable temperature environment for silicon carbide crystal growth, reduce the impact of external temperature fluctuations on the internal temperature, and ensure a more uniform temperature distribution within the crucible 100, the silicon carbide crystal growth apparatus 1 further includes an insulation chamber 300.

[0037] It is understandable that before isolating the seed crystal 203 from the inner cavity of the crucible 100 , the crucible cover 200 and the crucible 100 are placed in the insulation chamber 300 , and the seed crystal 203 is located in the inner cavity of the crucible 100 , that is, the first side 201 of the crucible cover 200 covers the crucible 100 .

[0038] In order to further reduce the impact of impurities on silicon carbide crystals, the insulation chamber 300 can also be evacuated to extract the impurities in the insulation chamber 300. Of course, in order to ensure the air pressure of the insulation chamber 300, the insulation chamber 300 can also be filled with gas. The type of gas can be an inert gas. There is no restriction on the gas filled in here, as long as the gas does not reduce the growth quality of the silicon carbide crystals.

[0039] Optionally, before closing the first side 201 of the crucible lid 200 onto the crucible 100, the crucible 100 may be evacuated and filled with gas multiple times. Repeated evacuation and filling of the crucible 100 can effectively remove oxygen, moisture, and other possible impurity gases from the crucible 100. Each injection of inert gas (such as argon Ar or helium He) can further dilute and ultimately replace the original atmosphere, thereby achieving a higher purity standard.

[0040] In this embodiment, the steps of heating the crucible 100 to a first preset temperature to preheat the raw materials and then evacuating the crucible 100 include: evacuating the crucible 100 and then filling the crucible 100 with a preset gas. That is, in this embodiment, the crucible 100 is first evacuated and then filled with gas. It will be appreciated that by first evacuating the crucible 100 and then filling it with gas, the air in the crucible 100 can be first extracted using a vacuum pump to reduce the internal pressure and the presence of oxygen, moisture, and other impurities. Performing an evacuation operation before each filling step can gradually improve the purity of the system, with the effect becoming more pronounced after multiple cycles of evacuation and filling.

[0041] Of course, in some other embodiments, the crucible 100 can be inflated first and then evacuated. In theory, only one inflation and one evacuation are needed to complete the initial purification, saving some time. However, this method is difficult to completely remove impurity gases in the system, such as oxygen and moisture. After only one evacuation, a high concentration of impurities may still exist in the crucible 100. Please continue to refer to Figure 1-Figure 4The present invention also provides a silicon carbide crystal growth apparatus 1 for growing silicon carbide crystals using the aforementioned silicon carbide crystal growth method. The silicon carbide crystal growth apparatus 1 includes a crucible 100, a crucible cover 200, a lifting module (not shown), a flip module 400, a vacuum module 600, and a gas filling module 500. The crucible cover 200 includes a first side 201 and a second side 202 that oppose each other. A seed crystal 203 is disposed on the first side 201. It will be appreciated that before growing silicon carbide crystals, the second side 202 of the crucible cover 200 is placed over the crucible 100.

[0042] The flip module 400 is connected to the crucible cover 200 to drive the crucible cover 200 to flip. Before crystal growth is prepared, the flip module 400 can drive the crucible cover 200 to flip so that the first side 201 of the crucible cover 200 covers the crucible 100.

[0043] The lifting module is used to move the crucible 100 and the crucible cover 200 away from or closer to each other in the axial direction. The exhaust module 600 and the charging module 500 are both connected to the crucible 100 .

[0044] Please refer to Figure 1 It can be understood that before crystal growth, the second side 202 of the crucible cover 200 can be turned downward by flipping the module 400 so that the second side 202 of the crucible cover 200 is covered on the crucible 100, and then the crucible 100 can be heated to a first preset temperature, and the crystal growth raw material in the crucible 100 is preheated so that the impurities in the crucible 100 and the impurities in the crystal growth raw material are vaporized, and the vaporized and rising impurities will not come into contact with the seed crystal 203, and then the crucible 100 is evacuated and the crucible 100 is inflated for multiple times to achieve impurity removal in the crucible 100.

[0045] Please refer to Figure 2-Figure 4 After removing impurities, in order to facilitate the flipping module 400 to flip the crucible cover 200 so that the first side 201 of the crucible cover 200 is covered on the crucible 100, the crucible 100 and the crucible cover 200 can be driven to move away from each other in the axial direction by the lifting module, and then the flipping module 400 drives the crucible cover 200 to flip so that the first side 201 of the crucible cover 200 faces the crucible 100, and the lifting module brings the crucible 100 and the crucible cover 200 closer to each other in the axial direction so that the first side 201 of the crucible cover 200 covers the crucible 100.

[0046] The exhaust module 600 and the charging module 500 are connected to the crucible 100. In detail, the exhaust module 600 includes an exhaust component (not shown) and an exhaust pipe 610. The two ends of the exhaust pipe 610 are respectively connected to the exhaust component and the crucible 100. The exhaust component extracts the gas in the crucible 100 through the exhaust pipe 610.

[0047] The inflatable module 500 includes an inflatable member (not shown) and an inflatable pipe 510 . Both ends of the inflatable pipe 510 are connected to the inflatable member and the crucible 100 respectively. The inflatable member inflates gas into the crucible 100 through the inflatable pipe 510 .

[0048] In detail, the flip module 400 includes a base 430, a driving member 440, a rack 450, a first bracket 410, and a second bracket 420. The first bracket 410 and the second bracket 420 are spaced apart from the base 430 and located on both sides of the crucible 100. The first bracket 410 and the second bracket 420 both extend axially along the crucible 100. The driving member 440 is connected to the rack 450 to drive the rack 450 to move axially on the first bracket 410. Optionally, the rack 450 can roll or slide on the first bracket 410. It will be understood that during the axial movement of the rack 450, it can drive the gear 230 to rotate, thereby driving the crucible cover 200 to flip. The cooperation between the gear 230 and the rack 450 can improve the accuracy of driving the crucible cover 200 to flip.

[0049] The crucible cover 200 is provided with a first rod 210 and a second rod 220 on its outer periphery. The first rod 210 is provided with a gear 230 that meshes with a rack 450. The second rod 220 is rotatably coupled to the second bracket 420. A lifting module is connected to the base 430 to drive the base 430 to move axially. It will be appreciated that when the lifting module drives the base 430 to move axially, it can also drive the crucible cover 200 to move axially, thereby moving the crucible cover 200 and the crucible 100 axially away from or closer to each other. A driving member 440 can be mounted on the base 430.

[0050] In this embodiment, the driving member 440 may be a linear motion pair, such as an oil cylinder, an air cylinder, an electric cylinder, or a screw motor.

[0051] The lifting module can also be a hydraulic cylinder, a pneumatic cylinder, an electric cylinder, or a screw motor. The base 430, the drive member 440, and the lifting module are located outside the insulation chamber 300. The end of the first bracket 410 away from the base 430 extends deep into the insulation chamber 300. The end of the second bracket 420 away from the base 430 extends deep into the insulation chamber 300. The end of the rack 450 away from the drive member 440 extends deep into the insulation chamber 300. In other words, the first bracket 410, the second bracket 420, and the rack 450 all extend into the insulation chamber 300. A portion of the exhaust pipe 610 is located inside the insulation chamber 300, and the end of the exhaust pipe 610 connected to the exhaust member is located outside the insulation chamber 300. A portion of the inflation pipe 510 is located inside the insulation chamber 300, and the end of the inflation pipe 510 connected to the inflation member is located outside the insulation chamber 300.

[0052] It can be understood that the first bracket 410 and the second bracket 420 can move axially relative to the insulation chamber 300 .

[0053] Please refer to Figure 5 Optionally, in some embodiments, for a crystal growth apparatus using multiple crucibles 100 for crystal growth, the silicon carbide crystal growth apparatus 1 includes multiple sequentially arranged holding chambers 300 , with two adjacent holding chambers 300 separated by a movable partition 310 that allows the holding chambers 300 to be withdrawn. It is understood that the movable partition 310 can be understood as a side wall of the holding chamber 300 . It is understood that each holding chamber 300 can accommodate a crucible 100 .

[0054] Since the first preset temperature for preheating the crystal growth material is lower than the second preset temperature for crystal growth, after the crystal growth of the crucible 100 in a certain insulation chamber 300 is completed, the heat of the insulation chamber 300 after the crystal growth can be transferred to the insulation chamber 300 where the crystal growth material needs to be preheated, that is, the movable partition 310 can be pulled out, and the heat after the crystal growth is completed can be transferred to the adjacent insulation chamber 300 to preheat the crystal growth material in the crucible 100 in the insulation chamber 300, so as to reduce energy consumption.

[0055] Please continue to refer to Figure 1-Figure 4 Optionally, in order to facilitate the assembly of the crucible cover 200 and the crucible 100, the first side 201 and the second side 202 of the crucible cover 200 are both provided with matching protrusions 240, and the open end of the crucible 100 is provided with a matching groove 101, and the matching protrusion 240 matches with the matching groove 101.

[0056] In detail, the mating grooves 101 can be evenly spaced along the circumference of the crucible 100, the number of mating protrusions 240 on the first side 201 of the crucible cover 200 is set in a one-to-one correspondence with the mating grooves 101, and the number of mating protrusions 240 on the second side 202 of the crucible cover 200 is also set in a one-to-one correspondence with the mating grooves 101, to ensure that after the flip module 400 flips the crucible cover 200 and the lifting module drives the crucible cover 200 to approach the crucible 100, the crucible cover 200 can be accurately and stably covered on the crucible 100.

[0057] In summary, the embodiment of the present invention provides a silicon carbide crystal growth method and a silicon carbide crystal growth device 1. The silicon carbide crystal growth device 1 grows silicon carbide crystals based on the silicon carbide crystal growth method. The embodiment of the present invention provides a silicon carbide crystal growth method. When the crucible 100 is evacuated, the seed crystal 203 is isolated from the inner cavity of the crucible 100. During the preheating process, impurities in the crystal growth raw material rise with the gas in a high-temperature environment. Since the crucible 100 is evacuated, the impurities can be extracted, which can improve the efficiency of impurity discharge. Therefore, impurities can be prevented from adhering to the seed crystal 203 and affecting crystal growth, thereby improving the quality of crystal growth.

[0058] The above description is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by any technician familiar with this technical field within the technical scope disclosed in the present invention should be covered by the scope of protection of the present invention.

Claims

1. A method for growing silicon carbide crystals, characterized in that: The method comprises: The seed crystal (203) is isolated from the inner cavity of the crucible (100) so that the air flow and particles in the crucible (100) do not contact the seed crystal (203); Heating the crucible (100) to a first preset temperature to preheat the raw material, and evacuating the crucible (100); removing the isolation between the seed crystal (203) and the inner cavity of the crucible (100), so that the gas phase formed by the sublimation of the raw material can grow on the seed crystal (203); heating the crucible (100) to a second preset temperature to grow crystals on the seed crystal (203); Wherein, the second preset temperature is greater than the first preset temperature.

2. The method for growing silicon carbide crystals according to claim 1, wherein: Before the step of isolating the seed crystal from the inner cavity of the crucible, the method further includes: The seed crystal (203) is placed in the inner cavity of the crucible (100), and the crucible (100) is placed in an insulation chamber (300); The insulation chamber (300) is evacuated.

3. The method for growing silicon carbide crystals according to claim 1, wherein: The step of heating the crucible (100) to a first preset temperature to preheat the raw material and evacuating the crucible (100) comprises: After the crucible (100) is evacuated, a preset gas is then filled into the crucible (100).

4. The method for growing silicon carbide crystals according to claim 3, wherein: The preset gas is an inert gas.

5. A silicon carbide crystal growing apparatus for growing silicon carbide crystals using the silicon carbide crystal growing method according to any one of claims 1 to 4, characterized in that: include: A crucible (100), a crucible cover (200), a lifting module, a turning module (400), a vacuum module (600) and a charging module (500), wherein the crucible cover (200) comprises a first side (201) and a second side (202) opposite to each other, and a seed crystal (203) is provided on the first side (201); The flip module (400) is connected to the crucible cover (200) to drive the crucible cover (200) to flip; The lifting module is used to move the crucible (100) and the crucible cover (200) away from or closer to each other in the axial direction; The gas extraction module (600) and the gas charging module (500) are both in communication with the crucible (100).

6. The silicon carbide crystal growth apparatus according to claim 5, wherein: The flip module (400) includes a base (430), a driving member (440), a rack (450), a first bracket (410) and a second bracket (420), wherein the first bracket (410) and the second bracket (420) are spaced apart from the base (430) and are located on both sides of the crucible (100), the driving member (440) is connected to the rack (450) to drive the rack (450) to move along the axial direction on the first bracket (410), the outer periphery of the crucible cover (200) is provided with a first rod (210) and a second rod (220), the first rod (210) is provided with a gear (230) meshing with the rack (450), the second rod (220) is rotatably matched with the second bracket (420), and the lifting module is connected to the base (430) to drive the base (430) to move along the axial direction.

7. The silicon carbide crystal growth device according to claim 6, characterized in that: The silicon carbide crystal growth device also includes an insulation chamber (300), the crucible (100) and the crucible cover (200) are located in the insulation chamber (300), the driving member (440) and the base (430) are both located outside the insulation chamber (300), and the first bracket (410), the second bracket (420) and the rack (450) all extend into the insulation chamber (300).

8. The silicon carbide crystal growth device according to claim 7, characterized in that: The silicon carbide crystal growth device comprises a plurality of sequentially arranged insulation chambers (300), two adjacent insulation chambers (300) are separated by a movable partition (310), and the movable partition (310) can be drawn out of the insulation chamber (300).

9. The silicon carbide crystal growth apparatus according to claim 5, wherein: The open end of the crucible (100) is provided with a matching groove (101), and the first side (201) and the second side (202) of the crucible cover (200) are both provided with matching protrusions (240), and the matching protrusions (240) are matched with the matching groove (101).

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