Method and device for evaluating mechanical properties of silicon wafer

Abstract

The invention provides a method for evaluating the mechanical performance of a silicon wafer, and belongs to the technical field of semiconductor manufacturing. The method comprises the steps that a silicon wafer is placed on a supporting ring of a wafer boat, the supporting face of the supporting ring of the wafer boat comprises two first protruding points, and the first protruding points make contact with the silicon wafer; the silicon wafer is subjected to high-temperature heat treatment, the silicon wafer slides on the two first convex points under the action of gravity and the high-temperature heat treatment, two sliding traces are generated, and the two sliding traces correspond to the two first convex points one to one; and based on the two slip traces, an evaluation result is generated, and the evaluation result is used for indicating the mechanical performance of the silicon wafer. The evaluation efficiency of the mechanical properties of the silicon wafer can be effectively improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a method and device for evaluating the mechanical properties of a silicon wafer. Background Art

[0002] The mechanical properties of a silicon wafer refer to its physical and mechanical characteristics under external forces. Among these, its anti-slip capability is considered a key mechanical property. High anti-slip capability effectively reduces the risk of wafer deformation and fragmentation during processing.

[0003] In related technologies, the slip resistance of silicon wafers is generally tested using the Rost test. Specifically, an indentation is introduced into the surface of the silicon wafer using a hardness tester. The wafer is then heat treated at a high temperature (1000-1200°C) for 1-2 hours to induce slip damage. The slip damage is then revealed by etching, and the damage length is measured using a microscope. However, this test method requires multiple steps, resulting in a low efficiency in evaluating the mechanical properties of silicon wafers. Summary of the Invention

[0004] In order to solve the above technical problems, the present invention provides a method and device for evaluating the mechanical properties of silicon wafers, which can effectively improve the evaluation effect of the mechanical properties of silicon wafers.

[0005] In order to achieve the above objectives, the technical solution adopted in the embodiment of the present invention is:

[0006] In a first aspect, the present invention provides a method for evaluating the mechanical properties of a silicon wafer, comprising:

[0007] Placing a silicon wafer on a support ring of a wafer boat, wherein a support surface of the support ring of the wafer boat includes two first bumps, and the first bumps are in contact with the silicon wafer;

[0008] Performing a high-temperature heat treatment on the silicon wafer, causing the silicon wafer to slide on the two first bumps under the action of gravity and the high-temperature heat treatment, thereby generating two slip marks, wherein the two slip marks correspond one-to-one to the two first bumps;

[0009] Based on the two slip marks, an evaluation result is generated, wherein the evaluation result is used to indicate the mechanical properties of the silicon wafer.

[0010] In some embodiments, generating an evaluation result based on the two slip traces includes:

[0011] Calculating two loads corresponding to the two first convex points respectively;

[0012] The evaluation result is generated according to the two slip lengths and the two loads respectively corresponding to the two slip traces.

[0013] In some embodiments, calculating the two loads corresponding to the two first convex points includes:

[0014] Testing the silicon wafer to obtain the weight, density and volume of the silicon wafer;

[0015] The loads of the two first bumps are calculated respectively according to the weight, density, volume and gravitational acceleration of the silicon wafer to obtain the two first loads.

[0016] In some embodiments, generating the evaluation result according to the two slip lengths and the two loads corresponding to the two slip traces, respectively, includes:

[0017] Obtaining the surface area of ​​each of the first convex points;

[0018] Calculating an average pressure on the silicon wafer based on the surface area of ​​each of the first bumps and the two first loads;

[0019] Calculating the average pressure on the silicon wafer based on the stress concentration factor to obtain the maximum shear stress corresponding to the silicon wafer;

[0020] Calculating the two slip lengths to obtain two slip lengths corresponding to the two slip traces;

[0021] The maximum shear stress, the two slip lengths, and the two first loads are calculated to obtain the evaluation result.

[0022] In some embodiments, calculating the maximum shear stress, the two slip lengths, and the two first loads to obtain the evaluation result includes:

[0023] Determining a critical shear stress of dislocation slip at which the silicon wafer slips on the two first bumps based on the maximum shear stress and the Schmidt factor;

[0024] Obtaining a target relationship expression, wherein the target relationship expression is used to express a corresponding relationship between an extended length of the silicon wafer, the two slip lengths, the two first loads, and the dislocation slip critical shear stress;

[0025] Substituting the two slip lengths, the two first loads, and the dislocation slip critical shear stress into the target relationship to calculate and obtain the extension length;

[0026] Based on the extension length, the evaluation result is generated.

[0027] In some embodiments, the support ring of the wafer boat further includes a second bump, the surface area of ​​the second bump is larger than the surface area of ​​each of the first bumps, the second bump is at the same distance from each of the first bumps, and the second bump is used to maintain the balance of the silicon wafer.

[0028] In a second aspect, the present invention provides a device for evaluating the mechanical properties of a silicon wafer, the device comprising:

[0029] A placement module is used to place a silicon wafer on a support ring of a wafer boat, wherein a support surface of the support ring of the wafer boat includes two opposite first bumps, and the first bumps are in contact with the silicon wafer;

[0030] a processing module, configured to perform a high-temperature heat treatment on the silicon wafer, wherein the silicon wafer slides on the two first bumps under the action of gravity and the high-temperature heat treatment, generating two slip marks, wherein the two slip marks correspond one-to-one to the two first bumps;

[0031] A generating module is used to generate an evaluation result based on the two slip marks, wherein the evaluation result is used to indicate the mechanical properties of the silicon wafer.

[0032] In a third aspect, the present invention further provides an electronic device comprising a processor, a memory, and a computer program stored in the memory and executable on the processor, wherein the computer program, when executed by the processor, implements the steps of the method described in the first aspect above.

[0033] In a fourth aspect, the present invention further provides a computer-readable storage medium having a computer program stored thereon, and when the computer program is executed by a processor, the steps in the method described in the first aspect are implemented.

[0034] In a fifth aspect, the present invention further provides a computer program product comprising computer instructions, which, when executed by a processor, implement the steps of the method described in the first aspect above.

[0035] The beneficial effects of the present invention are:

[0036] Through the technical solution of the present invention, a silicon wafer placed on a wafer boat support ring having two first bumps can be subjected to high-temperature heat treatment. Under the action of gravity and high-temperature treatment, the silicon wafer will slip on the two first bumps, generating two slip marks. The mechanical properties of the silicon wafer can be obtained by analyzing and calculating the two slip marks, thereby reducing the steps for detecting the mechanical properties of the silicon wafer and effectively improving the efficiency of evaluating the mechanical properties of the silicon wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the technical solution of the present invention, the following is a brief introduction to the drawings required for the description of the present invention. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0038] Figure 1 Schematic diagram of the process of evaluating the mechanical properties of a silicon wafer according to an embodiment of the present invention;

[0039] Figure 2 Schematic diagram of the structure of the wafer boat in an embodiment of the present invention;

[0040] Figure 3 A schematic diagram of a bump in an embodiment of the present invention;

[0041] Figure 4 This is one of the schematic diagrams of the contact position between the bump and the silicon wafer in an embodiment of the present invention;

[0042] Figure 5 Schematic diagram of silicon wafer sliding in an embodiment of the present invention;

[0043] Figure 6 Schematic diagram of measuring silicon wafer slip in an embodiment of the present invention;

[0044] Figure 7 is a linear graph for comparison in an embodiment of the present invention;

[0045] Figure 8 This is a second schematic diagram of the contact position between the bump and the silicon wafer in an embodiment of the present invention;

[0046] Figure 9 Schematic diagram of the structure of a device for evaluating the mechanical properties of a silicon wafer according to an embodiment of the present invention;

[0047] Figure 10 Schematic diagram of the structure of an electronic device in an embodiment of the present invention. DETAILED DESCRIPTION

[0048] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the described embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of the present invention.

[0049] The present invention provides a method and device for evaluating the mechanical properties of silicon wafers, which can effectively improve the evaluation effect of the mechanical properties of silicon wafers.

[0050] The embodiment of the present application provides a method for evaluating the mechanical performance of a silicon wafer, as shown in Figure 1 Figure 1 The flowchart of the method for evaluating the mechanical performance of the silicon wafer comprises the following steps.

[0051] In step 101, the silicon wafer is placed on the support ring of the boat, and the support surface of the support ring of the boat comprises two first protrusions, and the first protrusions are in contact with the silicon wafer.

[0052] In the embodiment, the boat is a container for melting and processing materials in semiconductor and material science, as shown in Figure 2 Figure 2 The structure diagram of the boat in the embodiment is shown, and the boat in the embodiment is provided with a support ring. It should be noted that the boat is generally a boat of a heat treatment furnace.

[0053] In order to induce slip under the action of gravity and thermal load, three protrusions are added to the support ring. The support surface of the support ring of the boat comprises two first protrusions arranged oppositely, and the first protrusions are in contact with the silicon wafer. In some embodiments, the support ring of the boat further comprises a second protrusion, the surface area of the second protrusion is greater than the surface area of each first protrusion, the distance between the second protrusion and each first protrusion is the same, and the second protrusion is used to maintain the balance of the silicon wafer. It should be noted that the relative arrangement refers to the arrangement on the same diameter of the circular support surface, as shown in Figure 3 and Figure 4 The schematic diagram of the protrusions in the embodiment is shown. Figure 3 Figure 4 The schematic diagram of the contact position of the protrusions and the silicon wafer is shown, the left and right protrusions are the first protrusions, the upper protrusion is the second protrusion, the protrusion at 180° is slightly wider (the size is 5mm*15mm), and is used to maintain the balance of the silicon wafer; the protrusions at 90° and 270° are used to introduce damage (the size is 2.5mm*2.5mm).

[0054] In step 102, the silicon wafer is subjected to high-temperature heat treatment, and the silicon wafer slips on the two first protrusions under the action of gravity and the high-temperature heat treatment, thereby generating two slip traces, and the two slip traces correspond to the two first protrusions one by one.

[0055] In the embodiment, after the silicon wafer is placed on the support surface of the support ring of the boat, the silicon wafer is subjected to high-temperature heat treatment, and the single crystal silicon wafer will slip under the action of gravity and thermal load, thereby generating two slip traces of the first two first protrusions. As shown in Figure 5 Figure 5 The schematic diagram of the slip of the silicon wafer in the embodiment is shown. ​​​​

[0056] Step 103: Generate an evaluation result based on the two slip marks, where the evaluation result is used to indicate the mechanical properties of the silicon wafer.

[0057] In this example, the anti-slip capability of a silicon wafer is evaluated based on two slip marks and the properties of the silicon wafer itself (weight, etc.), generating an evaluation result. In this example, the mechanical properties of a silicon wafer are described using its anti-slip capability as an example. Specifically, the anti-slip capability of a silicon wafer refers to its ability to resist slip or dislocation on or within the wafer under stress. This performance is crucial for maintaining material integrity and reducing defects during processing and operation.

[0058] Through the technical solution of the present invention, a silicon wafer placed on a wafer boat support ring having two first bumps can be subjected to high-temperature heat treatment. Under the action of gravity and high-temperature treatment, the silicon wafer will slip on the two first bumps, generating two slip marks. The mechanical properties of the silicon wafer can be obtained by analyzing and calculating the two slip marks, thereby reducing the steps for detecting the mechanical properties of the silicon wafer and effectively improving the efficiency of evaluating the mechanical properties of the silicon wafer.

[0059] In some embodiments, generating an evaluation result based on the two slip traces includes:

[0060] Calculating two loads corresponding to the two first convex points respectively;

[0061] The evaluation result is generated according to the two slip lengths and the two loads respectively corresponding to the two slip traces.

[0062] In this embodiment, the loads corresponding to the two first bumps are calculated according to the weight of the silicon wafer, wherein the loads can be calculated according to the gravity of the silicon wafer.

[0063] After obtaining the two first loads corresponding to the two first convex points, the two slip marks are measured to obtain the two slip lengths corresponding to the two slip marks, such as Figure 6 As shown, Figure 6 Schematic diagram of the measurement of silicon wafer slip in this embodiment. For example, the slip length is 4 cm.

[0064] Thus, two slip lengths and two first loads are calculated to generate an evaluation result.

[0065] In some embodiments, generating an evaluation result based on the two slip traces includes:

[0066] Calculating two loads corresponding to the two first convex points respectively;

[0067] The evaluation result is generated according to the two slip lengths and the two loads respectively corresponding to the two slip traces.

[0068] In this embodiment, the load is the weight of the silicon wafer. This can be measured by weight before testing, or in a typical silicon wafer fab, where the wafer's diameter and thickness are key parameters that must be measured. Since the density of single-crystal silicon is also constant, the load can be calculated using the equation mass - density - volume - gravitational acceleration.

[0069] Therefore, in this embodiment, the silicon wafer is first measured to obtain the weight, density and volume of the silicon wafer, and then the loads of the silicon wafer on the two first bumps are calculated according to the gravitational acceleration.

[0070] In some embodiments, generating the evaluation result according to the two slip lengths and the two loads corresponding to the two slip traces, respectively, includes:

[0071] Obtaining the surface area of ​​each of the first convex points;

[0072] Calculating an average pressure on the silicon wafer based on the surface area of ​​each of the first bumps and the two first loads;

[0073] Calculating the average pressure on the silicon wafer based on the stress concentration factor to obtain the maximum shear stress corresponding to the silicon wafer;

[0074] Calculating the two slip lengths to obtain two slip lengths corresponding to the two slip traces;

[0075] The maximum shear stress, the two slip lengths, and the two first loads are calculated to obtain the evaluation result.

[0076] In this embodiment, it is assumed that the loads distributed from the gravity load by the bumps at 90° and 270° are both F(k*G, for a silicon wafer with a fixed shape and a support ring with fixed bump positions, the distribution coefficient k should be fixed). For a single bump, the average pressure on the silicon wafer is:

[0077]

[0078] Among them, P avg is the average pressure, F is the load, A is the surface area of ​​the first bump, L is the length of the first bump, and w is the width of the first bump.

[0079] Based on the stress concentration factor, the average pressure on the silicon wafer is calculated to obtain the maximum shear stress corresponding to the silicon wafer. Specifically:

[0080] Taking stress concentration into account, the maximum pressure is:

[0081] p max = K p · p avg

[0082] wherein Kp is a stress concentration factor (typical value between 1.5 and 2), P max is the maximum pressure.

[0083] Thus, the maximum shear stress is calculated as:

[0084]

[0085] wherein τ max is the maximum shear stress.

[0086] Thus, the evaluation result is obtained by calculating according to the maximum shear stress, the two slip lengths and the two first loads.

[0087] In some embodiments, the calculating the evaluation result according to the maximum shear stress, the two slip lengths and the two first loads comprises:

[0088] determining a dislocation slip critical shear stress of the silicon wafer to slip on the two first bumps according to the maximum shear stress and a Schmidt factor;

[0089] obtaining a target relationship formula, the target relationship formula being used to represent a corresponding relationship between an extension length of the silicon wafer, the two slip lengths, the two first loads and the dislocation slip critical shear stress;

[0090] calculating the extension length by substituting the two slip lengths, the two first loads and the dislocation slip critical shear stress into the target relationship formula;

[0091] generating the evaluation result based on the extension length.

[0092] In the present embodiment, firstly, a starting condition of silicon wafer slip needs to be determined, specifically, the following expression:

[0093] τ resolved = τ max cosφcosλ≥ τ critical (T)

[0094] wherein τ resolved is a starting value of silicon wafer slip, τ criticalThe critical shear stress for dislocation slip is cosφcosλ, which is called the Schmidt Factor and is determined by the crystal orientation of the load F and the slip system of the crystal. For example, for single crystal silicon wafers, the slip system is generally {111} <110> , when the force acts in the

[100] direction, the Schmidt factor calculated using the vector dot product is approximately 0.408.

[0095] The target relationship is used to express the corresponding relationship between the extended length of the silicon wafer, the two slip lengths, the two first loads, and the critical shear stress of dislocation slip. When the load is too large, the relationship between the slip length and the overload degree is:

[0096]

[0097] Among them, m≈1~2.

[0098] From the above derivation, it can be seen that when the test parameters are fixed, the extension length is only related to the load and the critical shear stress of dislocation slip. The critical shear stress of dislocation slip is the indicator to be evaluated. Therefore, only the load and slip length are needed to understand the silicon wafer's resistance to dislocation slip. The slip length is obtained by subsequent XRT testing, a technology that uses X-rays for 3D imaging, providing high-resolution 3D images in a non-destructive manner.

[0099] During the verification process, the slip lengths of the samples measured by the Rossiter length method and the present invention (heat treatment conditions are 1000℃ / 2h) were compared. The linear graph of the comparison is shown in Figure 2. Figure 7 As shown in Figure 2. According to experience, when the slip length is less than 2 cm, the silicon wafer has good anti-slip ability. When the slip length is between 2 cm and 3.5 cm, the anti-slip ability of the silicon wafer is average. When the slip length is greater than 3.5 cm, the anti-slip ability of the silicon wafer is poor.

[0100] In Example 1, a

[100] 300mm silicon wafer with an Oi (interstitial oxygen) density of 12ppma, a BMD (bulk micro defect) density of 2E10 ppm, and a Notch of

[110] was tested. The test process is as follows: First, ensure that the silicon wafer has undergone FP (Final polish) and EP (Edge polish), and there is no other damage on the surface and edge of the silicon wafer. Second, the silicon wafer is measured for diameter and thickness, and the diameter is 300.01mm and the thickness is 776.34μm. Third, the silicon wafer is measured according to Figure 4The position shown is placed in a heat treatment furnace for heat treatment under the conditions of Ar / 1000℃ / 2h. Fourth, an XRT device, such as the Rigaku XRTmicron X-ray topography imaging system, is used for XRT testing. The ray source uses a Mo target with a diffraction surface of (400). Image processing software, such as wps, is used to measure the length of the slip in the map, and the longest slip line length is measured to be approximately 1.25cm. After conversion, the final slip line length is 1.25×(300 / 300.01)2×(775 / 776.34)=1.248cm.

[0101] In Example 2, a

[100] 300mm silicon wafer with an Oi (interstitial oxygen) density of 8ppma, a BMD (bulk micro defect) density of 1E6 ppm, and a Notch of

[100] was tested. The test process is as follows: First, ensure that the silicon wafer has undergone FP (Final polish) and EP (Edge polish), and there is no other damage on the surface and edge of the silicon wafer. Second, the silicon wafer is polished according to Figure 8 The position shown (ensuring that the 90° and 270° positions are in the

[110] crystal orientation) is placed in a heat treatment furnace for heat treatment under the conditions of Ar / 1000℃ / 2h. Third, the silicon wafer is measured for diameter and thickness, with a diameter of 300.00mm and a thickness of 780μm. Fourth, an XRT device, such as the Rigaku XRT XRTmicron X-ray morphology imaging system, is used for XRT testing. The ray source uses a Mo target with a diffraction surface of (400). The final test map is shown in FIG. Figure 5 As shown. Use image processing software, such as wps, to measure the length of the slip in the map. The longest slip line is about 4.00cm. Figure 6 The final sliding line length after conversion is 4.00×(300 / 300)2×(775 / 780)=3.974cm.

[0102] Through the technical solution of the present invention, a silicon wafer placed on a wafer boat support ring having two first bumps can be subjected to high-temperature heat treatment. Under the action of gravity and high-temperature treatment, the silicon wafer will slip on the two first bumps, generating two slip marks. The mechanical properties of the silicon wafer can be obtained by analyzing and calculating the two slip marks, thereby reducing the steps for detecting the mechanical properties of the silicon wafer and effectively improving the efficiency of evaluating the mechanical properties of the silicon wafer.

[0103] The embodiment of the present invention also provides a device for evaluating the mechanical properties of a silicon wafer, such as Figure 9 Shown, including:

[0104] A placement module 910 is configured to place a silicon wafer on a support ring of a wafer boat, wherein the support surface of the support ring of the wafer boat includes two first bumps, and the first bumps are in contact with the silicon wafer;

[0105] a processing module 920 configured to perform a high-temperature heat treatment on the silicon wafer, wherein the silicon wafer slides on the two first bumps under the action of gravity and the high-temperature heat treatment, generating two slip marks, wherein the two slip marks correspond one-to-one to the two first bumps;

[0106] The generating module 930 is configured to generate an evaluation result based on the two slip marks, wherein the evaluation result is used to indicate the mechanical properties of the silicon wafer.

[0107] In some embodiments, the generation module 930 includes:

[0108] A first calculation submodule, configured to calculate two loads corresponding to the two first convex points respectively;

[0109] The generating submodule is used to generate the evaluation result according to the two slip lengths and the two loads respectively corresponding to the two slip traces.

[0110] In some embodiments, the first computing submodule includes:

[0111] a detection subunit, configured to detect the silicon wafer to obtain the weight, density, and volume of the silicon wafer;

[0112] The second calculation subunit is used to calculate the loads of the two first bumps according to the weight, density, volume and gravitational acceleration of the silicon wafer to obtain the two first loads.

[0113] In some embodiments, the generating submodule includes:

[0114] an acquiring unit, configured to acquire the surface area of ​​each of the first convex points;

[0115] a first calculation unit, configured to calculate an average pressure on the silicon wafer based on a surface area of ​​each of the first bumps and the two first loads;

[0116] a second calculation unit, configured to calculate an average pressure on the silicon wafer based on a stress concentration coefficient to obtain a maximum shear stress corresponding to the silicon wafer;

[0117] a third calculating unit, configured to calculate the two slip lengths to obtain two slip lengths corresponding to the two slip traces;

[0118] The fourth calculation unit is used to calculate the maximum shear stress, the two slip lengths and the two first loads to obtain the evaluation result.

[0119] In some embodiments, the third computing unit includes:

[0120] A determination sub-unit is configured to determine a dislocation slip critical shear stress of the silicon wafer to slip on the two first convex points according to the maximum shear stress and the Schmid factor;

[0121] An acquisition sub-unit is configured to acquire a target relational expression, which is used to represent a corresponding relationship between an extension length of the silicon wafer, the two slip lengths, the two first loads and the dislocation slip critical shear stress;

[0122] A first calculation sub-unit is configured to substitute the two slip lengths and the two first loads and the dislocation slip critical shear stress into the target relational expression to calculate the extension length;

[0123] A generation sub-unit is configured to generate the evaluation result based on the extension length.

[0124] In some embodiments, the support ring of the wafer boat further comprises a second convex point, the surface area of the second convex point is greater than the surface area of each of the first convex points, the distance between the second convex point and each of the first convex points is the same, and the second convex point is used to maintain the balance of the silicon wafer.

[0125] By the technical scheme of the present application, the silicon wafer placed on the support ring of the wafer boat with two first convex points can be subjected to high-temperature heat treatment, the silicon wafer will slip on the two first convex points under the action of gravity and high-temperature treatment, and two slip traces are generated, so that the mechanical properties of the silicon wafer can be obtained by analyzing and calculating the two slip traces, the detection step of the mechanical properties of the silicon wafer is reduced, and the evaluation efficiency of the mechanical properties of the silicon wafer is effectively improved.

[0126] The embodiment of the present application further provides an electronic device. Figure 10 The electronic device can include a processor 1001, a memory 1002, and a program 10021 stored in the memory 1002 and executable on the processor 1001.

[0127] The program 10021, when executed by the processor 1001, can implement Figure 1 Any step in the corresponding method embodiment, and can achieve the same technical effect, to avoid repetition, here will not be repeated.

[0128] The present invention also provides a computer-readable storage medium having a computer program stored thereon. When executed by a processor, the computer program implements the various steps of the aforementioned method for evaluating the mechanical properties of a silicon wafer, achieving the same technical effect. To avoid repetition, the details are omitted here. The computer-readable storage medium may be, for example, a read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk.

[0129] An embodiment of the present invention further provides a computer program product, which is stored in a storage medium. The computer program product is executed by at least one processor to implement the various processes of the above-mentioned embodiment of the method for evaluating the mechanical properties of silicon wafers, and can achieve the same technical effect. To avoid repetition, it will not be described here.

[0130] It should be noted that, in this document, the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or apparatus comprising a series of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or apparatus comprising the element.

[0131] Through the description of the above embodiments, those skilled in the art can clearly understand that the above-mentioned embodiment methods can be implemented by means of software plus the necessary general hardware platform, and of course can also be implemented by hardware, but in many cases the former is a better embodiment. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, can be embodied in the form of a software product, which is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk), and includes a number of instructions for enabling a terminal (which can be a mobile phone, computer, server, air conditioner, or network device, etc.) to execute the methods described in each embodiment of the present invention.

[0132] The embodiments of the present invention are described above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present invention, ordinary technicians in this field can also make many forms without departing from the scope of protection of the present invention and the claims, all of which are protected by the present invention.

[0133] Through the description of the above embodiments, those skilled in the art can clearly understand that the above-mentioned embodiment methods can be implemented by means of software plus the necessary general hardware platform, and of course can also be implemented by hardware, but in many cases the former is a better embodiment. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, can be embodied in the form of a software product, which is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk), and includes a number of instructions for enabling a terminal (which can be a mobile phone, computer, server, air conditioner, or network device, etc.) to execute the methods described in each embodiment of the present invention.

[0134] In the various method embodiments of the present disclosure, the serial numbers of the steps cannot be used to limit the order of the steps. For ordinary technicians in this field, without paying any creative work, changes to the order of the steps are also within the scope of protection of the present disclosure.

[0135] It should be noted that the various embodiments in this specification are described in a progressive manner. Similar parts between the various embodiments can be referred to in conjunction with each other. Each embodiment focuses on the differences from other embodiments. In particular, since the embodiments are generally similar to the product embodiments, the description is relatively simple. For relevant parts, refer to the partial description of the product embodiments.

[0136] The above is a preferred embodiment of the present disclosure. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles described in the present disclosure. These improvements and modifications should also be regarded as the scope of protection of the present disclosure.

Claims

1. A method for evaluating the mechanical properties of a silicon wafer, characterized in that: The method comprises: Placing a silicon wafer on a support ring of a wafer boat, wherein a support surface of the support ring of the wafer boat includes two first bumps, and the first bumps are in contact with the silicon wafer; Performing a high-temperature heat treatment on the silicon wafer, causing the silicon wafer to slide on the two first bumps under the action of gravity and the high-temperature heat treatment, thereby generating two slip marks, wherein the two slip marks correspond one-to-one to the two first bumps; Based on the two slip marks, an evaluation result is generated, wherein the evaluation result is used to indicate the mechanical properties of the silicon wafer.

2. The method according to claim 1, characterized in that The generating of an evaluation result based on the two slip traces includes: Calculating two loads corresponding to the two first convex points respectively; The evaluation result is generated according to the two slip lengths and the two loads respectively corresponding to the two slip traces.

3. The method according to claim 2, characterized in that The calculating the two loads corresponding to the two first convex points respectively includes: Testing the silicon wafer to obtain the weight, density and volume of the silicon wafer; The loads of the two first bumps are calculated respectively according to the weight, density, volume and gravitational acceleration of the silicon wafer to obtain the two first loads.

4. The method according to claim 2, characterized in that Generating the evaluation result according to the two slip lengths and the two loads respectively corresponding to the two slip traces includes: Obtaining the surface area of ​​each of the first convex points; Calculating an average pressure on the silicon wafer based on the surface area of ​​each of the first bumps and the two first loads; Calculating the average pressure on the silicon wafer based on the stress concentration factor to obtain the maximum shear stress corresponding to the silicon wafer; Calculating the two slip lengths to obtain two slip lengths corresponding to the two slip traces; The maximum shear stress, the two slip lengths, and the two first loads are calculated to obtain the evaluation result.

5. The method according to claim 4, characterized in that The calculating the maximum shear stress, the two slip lengths, and the two first loads to obtain the evaluation result includes: Determining a critical shear stress of dislocation slip at which the silicon wafer slips on the two first bumps based on the maximum shear stress and the Schmidt factor; Obtaining a target relationship expression, wherein the target relationship expression is used to express a corresponding relationship between an extended length of the silicon wafer, the two slip lengths, the two first loads, and the dislocation slip critical shear stress; Substituting the two slip lengths, the two first loads, and the dislocation slip critical shear stress into the target relationship to calculate and obtain the extension length; Based on the extension length, the evaluation result is generated.

6. The method according to any one of claims 1 to 5, characterized in that The support ring of the wafer boat further includes a second bump, the surface area of ​​the second bump is larger than the surface area of ​​each of the first bumps, the second bump is at the same distance from each of the first bumps, and the second bump is used to maintain the balance of the silicon wafer.

7. A device for evaluating the mechanical properties of a silicon wafer, characterized in that: The device comprises: A placement module is used to place a silicon wafer on a support ring of a wafer boat, wherein the support surface of the support ring of the wafer boat includes two first bumps, and the first bumps are in contact with the silicon wafer; a processing module, configured to place the silicon wafer in a high-temperature environment, causing the silicon wafer to slide on the two first bumps under the action of gravity and the high-temperature environment, thereby generating two slip marks, wherein the two slip marks correspond one-to-one to the two first bumps; A generating module is used to generate an evaluation result based on the two slip marks, wherein the evaluation result is used to indicate the mechanical properties of the silicon wafer.

8. An electronic device, characterized in that: include: A processor, a memory, and a program stored in the memory and executable on the processor, wherein the program, when executed by the processor, implements the steps of the method according to any one of claims 1 to 6.

9. A computer-readable storage medium, characterized in that The computer-readable storage medium stores a computer program, which implements the steps of the method according to any one of claims 1 to 6 when executed by a processor.

10. A computer program product, characterized in that The method comprises computer instructions, which, when executed by a processor, implement the steps of the method according to any one of claims 1 to 6.

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