A monolithic semiconductor rapid thermal annealing system

Abstract

The application is suitable for the technical field of semiconductor annealing, and provides a single-chip semiconductor rapid annealing system, which comprises an oxidation module, the oxidation module injects oxygen according to the volume of unprocessed silicon wafer, the oxygen reacts with the silicon wafer to perform high-temperature oxidation, generates silicon oxide, and outputs a processed silicon wafer; an annealing module, the annealing module receives the processed silicon wafer, injects nitrogen according to the volume of the unprocessed silicon wafer, rapidly heats the whole annealing module, stops heating when the temperature rises to a reaction temperature, maintains the current temperature, completes the annealing process, and outputs a secondary processed silicon wafer; a transfer module, the transfer module receives the secondary processed silicon wafer transmitted by the annealing module and transfers the secondary processed silicon wafer; and a polishing module, the polishing module comprises a sliding assembly. The device solves the problem that the silicon wafer is prone to defects in the nitriding annealing process, and achieves the purpose of avoiding defects by first performing an oxidation step to generate silicon oxide and protecting the silicon wafer from directly contacting high-temperature nitrogen.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor annealing, more particularly, it relates to a single-chip semiconductor rapid annealing system. BACKGROUND

[0002] In the modern semiconductor manufacturing process, internal stress is generated in the process of processing silicon wafers, such as cutting, grinding and polishing. Annealing can eliminate these stresses and reduce the cracking and warping of silicon wafers. In addition, annealing can reduce the point defect and dislocation density in the silicon wafer, and improve the electrical properties and reliability of the silicon wafer. High-temperature nitrogen annealing is one of the commonly used processes for silicon wafer annealing, and has been widely used in the manufacturing process of various devices, such as high-temperature nitrogen annealing after implantation (which requires high temperature of 1000℃ or above to push the implanted ions into a deeper region, also known as well pushing), which is used to activate the implanted ions and repair the surface lattice damaged in the implantation process.

[0003] In the semiconductor manufacturing process, lattice defects may occur on the surface of the silicon wafer during the high-temperature annealing process. These defects can easily form irregular protrusions on the surface of the product during the subsequent film formation process. In some severe cases, macroscopic color differences can be observed with the naked eye. This color difference is caused by the uneven reflection of external light. Defects have a significant destructive effect on the electrical properties of semiconductor devices, causing dielectric breakdown, leakage current and short circuit, directly reducing product yield, and even causing reliability to decrease.

[0004] At present, the silicon wafer annealing process in the market is carried out by nitrogen annealing, but defects are inevitably generated. Moreover, defects are not only generated on the surface of the silicon wafer. Since the particles generated on the surface of the silicon wafer are blown to the surface of the silicon wafer below, they can also cause defects on the silicon wafer below. Therefore, it is not advisable to use polishing to remove the defects of the silicon wafer. Controlling the airflow in the annealing furnace cannot completely avoid the generation of defects. Therefore, only the silicon wafers with defects can be removed by screening. However, this method cannot guarantee that the silicon wafers with defects are completely removed. Moreover, after removal, the silicon wafers with defects cannot be used, which will result in a high waste.

[0005] Therefore, it is necessary to provide a single-chip semiconductor rapid annealing system to solve the above problems. SUMMARY

[0006] In view of the deficiencies of the prior art, the purpose of the present application is to provide a single-chip semiconductor rapid annealing system which generates an oxide layer first to protect the silicon wafer from generating defects in the subsequent nitrogen annealing process, and then removes the oxide layer by polishing to obtain a silicon wafer which has been removed of the oxide layer and has completed annealing.

[0007] To achieve the above object, the present application provides the following technical solutions:

[0008] A monolithic semiconductor rapid annealing system, comprising:

[0009] A processing chamber, comprising a heating assembly, a vacuum assembly;

[0010] An oxidation module arranged inside the processing chamber, comprising an oxygen injection assembly, which injects oxygen according to the volume of the unprocessed silicon wafer and generates silicon oxide by high-temperature oxidation through the reaction of oxygen and the silicon wafer, and outputs the first-processed silicon wafer;

[0011] An annealing module arranged inside the processing chamber, comprising a nitrogen injection assembly, which is used to receive the first-processed silicon wafer, injects nitrogen according to the volume of the unprocessed silicon wafer, and completes the annealing process by heating the whole annealing module to the reaction temperature through the heating assembly and then maintaining the current temperature, and outputs the second-processed silicon wafer;

[0012] A transfer module used to receive the second-processed silicon wafer transmitted by the annealing module and transfer the second-processed silicon wafer;

[0013] At least one set of polishing modules, comprising a sliding assembly, two sets of polishing assemblies are slidably connected to the sliding assembly, and the two sets of polishing assemblies are arranged oppositely, the polishing modules are used to receive the second-processed silicon wafer transmitted by the transfer module, remove the oxide layer on the surface of the silicon wafer by polishing, generate the processed silicon wafer, and output the processed silicon wafer to the transfer module;

[0014] A storage module used to receive and store the processed silicon wafer and maintain the properties of the processed silicon wafer.

[0015] By adopting the above technical solutions, the silicon wafer is oxidized by the oxidation module to generate a silicon oxide protective layer, which isolates the silicon wafer from the high-temperature nitrogen gas, avoids the generation of defects in the silicon wafer due to high temperature during the annealing process, and causes the increase of the defective rate of the silicon wafer, the annealing is performed by using high-temperature nitrogen gas, and the oxide layer on the surface of the silicon wafer needs to be treated after the annealing is completed, the oxide layer on the surface of the silicon wafer is removed by the polishing module, and the two sets of polishing modules continuously move towards the silicon wafer during the polishing process, so that the deformation of the silicon wafer during the processing process is avoided, and finally the high-quality silicon wafer is obtained.

[0016] The present application is further provided as follows: the first-processed silicon wafer comprises a surface silicon oxide protective layer and an internal silicon lattice which has not been subjected to annealing operation; wherein the thickness of the silicon oxide protective layer is uneven;

[0017] The secondary processing silicon wafer includes a silicon oxide protective layer on the surface and an internal silicon lattice that has completed the annealing operation.

[0018] The surface of the finished silicon wafer does not have a silicon oxide protective layer, and the internal silicon lattice has completed the annealing.

[0019] The application further provides that:

[0020] If the oxidation module is started, the vacuum component evacuates all the gas in the processing chamber, the processing chamber is injected with oxygen through the oxygen injection component and is heated, and the oxidation processing is performed.

[0021] If the annealing module is started, the vacuum component evacuates all the gas in the processing chamber, the processing chamber is injected with nitrogen through the nitrogen injection component and is annealed.

[0022] The application further provides that the nitrogen injection and annealing processing in the processing chamber include the following specific steps:

[0023] S1: The temperature is increased to a preset temperature, which is set in the range of 1000-1200°C; the specific temperature depends on the type of the silicon wafer and the required electrical properties;

[0024] S2: The temperature is maintained for a period of time, which is from nine minutes to nine hours, and the holding time depends on the type of the silicon wafer and the required electrical properties, to ensure uniform distribution of the temperature inside the silicon wafer and fully activate the dopant;

[0025] S3, cooling: The silicon wafer is slowly cooled to prevent new stress and defects from being generated in the rapid cooling process, and the cooling rate is set to be between nine degrees per minute and ninety degrees per minute.

[0026] The application further provides that: during the storage process of the storage module, the storage conditions are adjusted according to the type of the finished silicon wafer and the required electrical properties; wherein the storage conditions include low-temperature storage, dry storage and dustproof storage.

[0027] The application further provides that: the polishing module polishes the secondary processing silicon wafer through two groups of polishing components, the transfer module transfers the secondary processing silicon wafer to between the two groups of polishing components, and the two groups of polishing components are set to have opposite rotation directions and the same rotation speed.

[0028] The application further provides that: the sliding assembly includes a base, the top is provided with two groups of struts, the two groups of struts are symmetrically arranged, a sliding rod is installed between the two groups of struts, and the bottom of the sliding rod is connected with the top of the base.

[0029] The application is further provided with: the polishing assembly comprises a sliding block slidingly connected to the sliding assembly, a polishing main body is installed at one end of the sliding block away from the sliding assembly, a driving module is connected to the bottom of the polishing main body, a driving telescopic rod is connected to one end of the polishing main body away from the sliding block, and a polishing disc is connected to the top of the driving telescopic rod.

[0030] The application is further provided with: the driving telescopic rod comprises a sleeve rod inserted into the polishing main body, an inner rod is slidingly connected inside the sleeve rod, a fixing plate is inserted into the top of the inner rod, and the polishing disc is inserted into the top of the inner rod, and the fixing plate is arranged on the bottom of the polishing disc.

[0031] By adopting the above technical scheme, in the actual polishing process, the two groups of polishing modules rotate in the opposite direction at the same frequency, and in the polishing process, the silicon oxide protective layer is gradually stripped, so that the silicon oxide protective layer on the surface of the silicon wafer gradually thins, if the two groups of polishing modules do not move at this time, part of the silicon oxide protective layer will not be stripped, therefore, by moving the inner rod relative to the sleeve rod, the two groups of polishing modules move towards each other, so that the polishing disc is attached to the top and bottom of the silicon wafer for polishing.

[0032] The application is further provided with: the polishing disc is provided with a chip guide groove at one end away from the driving telescopic rod, a chip discharge groove is formed in the end face of the polishing disc away from the driving telescopic rod, and a chip collecting groove is arranged on one side of the chip discharge groove.

[0033] By adopting the above technical scheme, the polishing module can collect the stripped silicon oxide protective layer slag during the polishing process through the chip collecting groove, the amount of silicon oxide protective layer slag rotated in one circle is less than the amount that can be collected by the chip collecting groove, so that the silicon oxide protective layer slag can be prevented from remaining on the surface of the polishing disc to affect the polishing effect, and the silicon oxide protective layer slag collected in the chip discharge groove can flow into the chip discharge groove through centrifugal force, so that the silicon oxide protective layer slag collected in the chip discharge groove is thrown outwards and out of the polishing disc through the chip guide groove, so that the silicon oxide protective layer slag is prevented from remaining on the side wall of the polishing disc, and the design of the chip guide groove can also prevent the silicon wafer from being damaged due to the edge of the polishing disc touching the silicon wafer during the polishing process.

[0034] In summary, the present application has at least one of the following beneficial technical effects:

[0035] 1、The present application is by oxidation module, the silicon wafer is handled to generate the silicon oxide protective layer, the silicon oxide protective layer insulates the silicon wafer with high temperature nitrogen, avoid the silicon wafer in annealing process, due to high temperature and generate the defect, cause the silicon wafer the substandard rate rise, and adopt high temperature nitrogen annealing, after annealing, its surface oxide layer needs to be handled, the oxide layer on the surface of the silicon wafer is ground and stripped by the grinding module, and during the grinding process, the two sets of grinding modules continuously move towards the silicon wafer, so that the silicon wafer is not deformed during processing, and finally a high-quality silicon wafer is obtained.

[0036] 2、In actual grinding process, the two sets of grinding modules are reversely and synchronously rotated, and the silicon oxide protective layer is gradually stripped during the grinding process, so that the silicon oxide protective layer on the surface of the silicon wafer gradually thins. If the two sets of grinding modules do not move at this time, part of the silicon oxide protective layer will not be stripped. Therefore, the inner rod moves relative to the outer sleeve rod, so that the two sets of grinding modules move towards each other, ensuring that the grinding disc is attached to the top and bottom of the silicon wafer for grinding.

[0037] 3、Through the grinding module, the ground and stripped silicon oxide protective layer slag can be collected through the scrap collecting groove. The amount of silicon oxide protective layer slag rotated once is less than the amount that can be collected by the scrap collecting groove, which can ensure that the silicon oxide protective layer slag does not stay on the surface of the grinding disc to affect the grinding effect. In addition, the silicon oxide protective layer slag collected by the scrap collecting groove can flow into the scrap discharging groove. Through centrifugal action, the silicon oxide protective layer slag collected in the scrap discharging groove is thrown outwards and thrown out of the grinding disc through the chip guide groove, ensuring that the silicon oxide protective layer slag does not remain on the side wall of the grinding disc. At the same time, the design of the chip guide groove can also ensure that the silicon wafer is not damaged due to the edge of the grinding disc touching the silicon wafer during the grinding process. BRIEF DESCRIPTION OF DRAWINGS

[0038] Figure 1 It is a structural schematic diagram of the single wafer semiconductor rapid annealing system of the present application.

[0039] Figure 2 It is an exploded schematic diagram of the grinding assembly in the present application.

[0040] Figure 3 It is a structural schematic diagram of the driving telescopic rod in the present application.

[0041] Figure 4 It is a structural schematic diagram of the grinding disc in the present application.

[0042] Figure 5 It is a module schematic diagram of the single wafer semiconductor rapid annealing system of the present application.

[0043] Figure 6 It is a flow chart of the single wafer semiconductor rapid annealing system of the present application.

[0044] Explanation of reference signs: 1, sliding assembly; 11, base; 12, support column; 13, sliding rod;

[0045] 2, polishing assembly; 21, sliding block; 22, polishing body; 23, driving module; 24, driving telescopic rod; 241, outer sleeve rod; 242, inner rod; 243, fixing plate; 25, polishing disc; 251, chip guide groove; 252, chip removal groove; 253, chip collection groove. DETAILED DESCRIPTION

[0046] It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict. The present application will be described in detail below with reference to the drawings and in combination with the embodiments.

[0047] It should be noted that, unless otherwise specified, all technical and scientific terms used in the present application have the same meaning as generally understood by those skilled in the art to which the present application belongs.

[0048] Please refer to Figures 1-6 The present application provides the following technical solutions:

[0049] Embodiment one, please refer to Figure 1 , specifically refers to a single wafer semiconductor rapid annealing system, which comprises a processing chamber, an oxidation module, an annealing module, a transfer module, a polishing module and a storage module.

[0050] The processing chamber comprises a heating assembly and a vacuum assembly. The heating assembly can heat the entire heating chamber, and the vacuum assembly can perform vacuum treatment inside the heating chamber.

[0051] The heating assembly and the vacuum assembly in the present embodiment adopt existing technologies, and those skilled in the art can directly or improve the obtained heating assembly and vacuum assembly to be applied to the system of the present embodiment. Here, the specific structure of the heating assembly and the vacuum assembly is not absolutely limited.

[0052] The oxidation module is arranged inside the processing chamber. The oxidation module comprises an oxygen injection assembly. The oxygen injection assembly injects oxygen into the processing chamber according to the volume of the unprocessed silicon wafer. The larger the volume of the silicon wafer, the larger the space it occupies in the processing chamber, and then less oxygen is used. The smaller the volume of the silicon wafer, the smaller the space it occupies in the processing chamber, and then more oxygen is used, so as to ensure a certain oxygen pressure inside the processing chamber. The oxygen reacts with the silicon wafer through the heating assembly to perform high-temperature oxidation, generating silicon oxide, and outputting a processed silicon wafer. Through the oxidation module, a silicon oxide protective layer is generated on the surface of the silicon wafer. The silicon oxide protective layer can isolate the silicon wafer from high-temperature nitrogen, avoiding the phenomenon that the silicon wafer directly contacts high temperature in the subsequent annealing process to cause defects.

[0053] The annealing module is arranged inside the processing chamber, and the annealing module comprises a nitrogen injection assembly, which injects nitrogen into the processing chamber according to the volume of the unprocessed silicon wafer. The larger the volume of the silicon wafer, the larger the space occupied in the processing chamber, and the less nitrogen is used to occupy the space in the processing chamber. The heating assembly is used to heat the whole annealing module to the reaction temperature, and then stop heating and maintain the current temperature to complete the annealing process and output the secondary processed silicon wafer. Through high-temperature nitrogen injection annealing, the implanted ions are activated, and the surface lattice damaged in the implantation is repaired.

[0054] The transfer module is arranged outside the processing chamber and is composed of a clamping part and a mechanical arm, which is used to receive the secondary processed silicon wafer transferred by the annealing module and transfer the secondary processed silicon wafer. At the same time, the transfer module can also transfer the processed silicon wafer polished by the polishing module to the storage module for storage. During the transfer process, the transfer module ensures that the silicon wafer does not shake to avoid deformation of the silicon wafer during the transfer process.

[0055] It should be understood that the transfer module in the embodiment uses existing technology, and the transfer module obtained directly or improved by those skilled in the art can be applied to the system of the embodiment. The specific structure of the transfer module is not absolutely limited here.

[0056] The polishing module comprises a sliding assembly 1, two groups of polishing assemblies 2 are slidably connected to the sliding assembly 1, the two groups of polishing assemblies 2 are arranged opposite to each other, and the two groups of polishing assemblies 2 can realize relative sliding in the vertical direction. The polishing module receives the secondary processed silicon wafer transferred by the transfer module, removes the oxide layer on the surface of the silicon wafer by polishing, generates the processed silicon wafer, and outputs the processed silicon wafer to the transfer module. Through the polishing module, the oxide layer on the surface of the secondary processed silicon wafer can be removed, and the impurities on the surface of the silicon wafer can also be removed, which can significantly improve the electrical performance and reliability of the silicon wafer, thereby improving the quality and performance of the final product.

[0057] The storage module receives the processed silicon wafer, stores the processed silicon wafer, and maintains the properties of the processed silicon wafer. During the storage process of the storage module, the storage conditions are adjusted according to the properties of the processed silicon wafer. The storage adjustment includes low-temperature storage, dry storage, and dustproof storage.

[0058] Through low-temperature storage, the silicon wafer is stored in a low-temperature environment (such as -40°C), which can slow down the oxidation and pollution of the silicon wafer. Through dry storage, the silicon wafer is stored in a dry environment, which can prevent the silicon wafer from absorbing moisture and oxidizing. Through dustproof storage, the silicon wafer is stored in a sealed dustproof cabinet, which can prevent dust and particulate matter pollution. Through the low-temperature storage, dry storage, and dustproof storage, the properties of the silicon wafer can be guaranteed not to change during the storage process, and the oxidation and pollution caused by the storage can be avoided.

[0059] Specifically, the surface of the primary processed silicon wafer has a silicon oxide protective layer, and the internal silicon lattice is not annealed; the thickness of the silicon oxide protective layer is uneven, which is easy to cause the silicon wafer to deform in the subsequent polishing process due to the uneven thickness of the silicon oxide protective layer; the surface of the secondary processed silicon wafer has a primary silicon oxide protective layer, and the internal silicon lattice is annealed; the surface of the processed silicon wafer does not have a silicon oxide protective layer, and the internal silicon lattice is annealed.

[0060] Specifically, the oxidation module and the annealing module share the same processing chamber, which is a cavity with gas injection and temperature control. It should be understood that the processing chamber in the present embodiment uses existing technology, and the processing chamber obtained directly or improved by those skilled in the art can be applied to the system of the present embodiment. Therefore, the specific structure of the processing chamber is not absolutely limited here.

[0061] If the oxidation module is started, all the gas in the processing chamber is pumped out, oxygen is injected into the processing chamber, and the temperature is raised for oxidation processing; if the annealing module is started, all the gas in the processing chamber is pumped out, nitrogen is injected into the processing chamber, and annealing processing is performed. By pumping out all the gas in the processing chamber, it is ensured that there is no gas in the processing chamber that may contaminate the silicon wafer.

[0062] In the present embodiment, specifically, the processing chamber is injected with nitrogen and annealed, which includes the following specific steps:

[0063] S1, temperature rise: the temperature is raised to a preset temperature, which is set in the range of 1000-1200°C; the specific temperature depends on the type of silicon wafer and the required electrical properties;

[0064] S2, temperature holding: holding at a predetermined temperature for a period of time, usually from a few minutes to a few hours, the temperature holding time depends on the type of silicon wafer and the required electrical properties, to ensure uniform distribution of temperature inside the silicon wafer and fully activate the dopant;

[0065] S3, cooling: slowly cool the silicon wafer to prevent new stress and defects from being generated during rapid cooling, the cooling rate is usually between nine degrees per minute and ninety degrees per minute.

[0066] In the present embodiment, specifically: the polishing module polishes through two groups of polishing assemblies 2, the transfer module transfers the secondary processed silicon wafer between the two groups of polishing assemblies 2, and the two groups of polishing assemblies 2 are set to opposite rotation directions and the same rotation speed.

[0067] Referring to Figure 1The sliding assembly 1 comprises a base 11 arranged in a horizontal direction, two groups of supports 12 arranged in a vertical direction and symmetrically arranged on the top of the base 11, and a sliding rod 13 arranged between the two groups of supports 12 and connected to the top of the base 11. The sliding assembly 1 provides an operating environment for the polishing module as a whole, so that the polishing module can be prevented from shaking during actual use.

[0068] Referring to Figure 2 The polishing assembly 2 comprises a sliding block 21 slidably connected to the sliding assembly 1, the sliding block 21 being sleeved outside the sliding rod 13 and being adapted in shape to the sliding rod 13, the sliding block 21 being capable of sliding in a vertical direction relative to the sliding rod 13, the polishing main body 22 being arranged at an end of the sliding block 21 away from the sliding assembly 1, the driving module 23 being connected to the bottom of the polishing main body 22, the driving telescopic rod 24 being connected to an end of the polishing main body 22 away from the sliding block 21, and the polishing disc 25 being connected to the top end of the driving telescopic rod 24.

[0069] Specifically, the driving module 23 can drive the driving telescopic rod 24 to rotate, and the driving module 23 can change the rotating direction to drive the driving telescopic rod 24 to change the direction, and the rotation of the driving telescopic rod 24 can drive the polishing disc 25 arranged at the top of the driving telescopic rod 24 to rotate, thereby achieving the polishing of the silicon wafer.

[0070] Referring to Figure 3 The driving telescopic rod 24 comprises a sleeve rod 241 inserted into the polishing main body 22, and an inner rod 242 slidably connected inside the sleeve rod 241, the inner rod 242 being capable of sliding in a vertical direction inside the sleeve rod 241, the inner rod 242 having a fixing plate 243 inserted into the top of the inner rod 242, and the polishing disc 25 being inserted into the top of the inner rod 242, the inner rod 242 providing an installation environment for the polishing disc 25, and the fixing plate 243 being arranged to abut against the bottom of the polishing disc 25 to ensure that the polishing disc 25 rotates stably during polishing and does not fall off.

[0071] Specifically, during actual polishing, the two polishing assemblies 2 rotate in opposite directions and at the same frequency, and the silicon oxide protective layer is gradually stripped during polishing, so that the silicon oxide protective layer on the surface of the silicon wafer gradually thins. If the two polishing assemblies 2 do not move at this time, part of the silicon oxide protective layer will not be stripped. Therefore, the inner rod 242 moves relative to the sleeve rod 241 to move the two polishing assemblies 2 towards each other, so that the polishing disc 25 polishes the top and bottom of the silicon wafer. Since the thickness of the silicon oxide protective layer on the surface of the silicon wafer is different, if the bottom and top surfaces are polished twice, the uneven thickness of the other surface will cause the silicon wafer to deform during polishing. Therefore, the two polishing assemblies 2 apply pressure to the silicon wafer in opposite directions and at the same frequency, which can ensure the polishing effect of the silicon wafer and prevent the silicon wafer from deforming due to polishing.

[0072] In this embodiment, specifically, the polishing disc 25 is provided with a chip guide groove 251 at one end away from the driving telescopic rod 24, and the chip guide groove 251 is obliquely arranged to facilitate the collection of the oxide layer slag inside the chip guide groove 251. The polishing disc 25 is provided with a chip discharge groove 252 at the end face away from the driving telescopic rod 24, and the chip discharge groove 252 is provided with a chip collection groove 253 at one side. In the polishing process, the polished and peeled off silicon oxide protective layer slag can be collected through the chip collection groove 253. The amount of the silicon oxide protective layer slag in one rotation is less than the amount that can be collected by the chip collection groove 253, which can ensure that the silicon oxide protective layer slag does not stay on the surface of the polishing disc 25 to affect the polishing effect. In addition, the silicon oxide protective layer slag collected by the chip collection groove 253 can flow into the chip discharge groove 252. Through the centrifugal effect, the silicon oxide protective layer slag collected in the chip discharge groove 252 is thrown outwards and out of the polishing disc 25 through the chip guide groove 251, which ensures that the silicon oxide protective layer slag does not remain on the side wall of the polishing disc 25. At the same time, the design of the chip guide groove 251 can also ensure that the silicon wafer will not be damaged due to the edge of the polishing disc 25 touching the silicon wafer during the polishing process.

[0073] In this embodiment, specifically, a single wafer rapid annealing system uses a method that includes the following steps:

[0074] A1, the unprocessed silicon wafer enters the processing chamber, all the gas in the processing chamber is discharged, oxygen is injected, the processing chamber is heated, a silicon oxide protective layer is generated on the surface of the silicon wafer, the silicon oxide protective layer can ensure that the silicon wafer does not generate defects during the annealing process, and a first processed silicon wafer is obtained and output.

[0075] A2, the oxygen in the processing chamber is discharged, the annealing module receives the first processed silicon wafer, nitrogen is injected into the processing chamber, nitrogen is injected according to the volume of the unprocessed silicon wafer, the entire processing chamber is rapidly heated, the reaction temperature is stopped from rising, the current temperature is maintained, the annealing process is completed, and a second processed silicon wafer is output.

[0076] The annealing specific steps are:

[0077] A21, heating: the temperature is raised to a preset temperature, usually in the range of 1000-1200°C; the specific temperature depends on the type of silicon wafer and the required electrical properties.

[0078] A22, holding: maintaining at a predetermined temperature for a period of time, usually from a few minutes to a few hours, the holding time depends on the type of silicon wafer and the required electrical properties, to ensure uniform distribution of temperature inside the silicon wafer and fully activate the dopant;

[0079] A23, cooling: slowly cool the silicon wafer to prevent new stress and defects from being generated during rapid cooling. The cooling rate is usually between a few degrees per minute and a few tens of degrees per minute.

[0080] A3, the annealed secondary processed silicon wafer is transferred by the transfer module, and leaves the processing chamber, and the processing chamber is empty, facilitating processing of the next batch of silicon wafers.

[0081] A4, the secondary processed silicon wafer transferred by the transfer module is transferred to the polishing module for polishing to remove the silicon oxide protective layer on the surface thereof.

[0082] The polishing specific steps are as follows:

[0083] A41, the transfer module transfers the secondary processing module between the two polishing assemblies 2;

[0084] A42, the two polishing assemblies 2 slide in the vertical direction of the relative sliding assembly 1, so that the two polishing assemblies 2 adhere to the bottom and top of the secondary processed silicon wafer;

[0085] A43, the two polishing assemblies 2 rotate in opposite directions at the same frequency to polish the silicon wafer; during the polishing process, the silicon oxide protective layer on the surface of the secondary processed silicon wafer gradually thins, so that the polishing disc 25 always adheres to the surface of the silicon wafer by sliding the inner rod 242 relative to the outer sleeve rod 241. In addition, during the polishing process, the generated silicon oxide protective layer debris can flow into the chip collection groove 253 through the chip collection groove 253, and the collected silicon oxide protective layer debris in the chip collection groove 252 is thrown out by centrifugal force.

[0086] A44, the polished silicon wafer is generated, and the processed silicon wafer is output by the transfer module.

[0087] A5, the processed silicon wafer is stored by the storage module, different storage schemes are adopted according to different electrical requirements of the processed silicon wafer, and the shape of the processed silicon wafer is maintained.

[0088] Obviously, the above-described embodiments are only part of the embodiments of the present application, not all. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor should belong to the scope of protection of the present application.

Claims

1. A monolithic semiconductor rapid thermal anneal system, comprising: The system comprises: a processing chamber, which comprises a heating assembly and a vacuum assembly; an oxidation module arranged in the processing chamber, which comprises an oxygen injection assembly configured to inject oxygen into the unprocessed silicon wafer according to the volume of the unprocessed silicon wafer and perform high-temperature oxidation by reacting the oxygen with the silicon wafer to generate silicon oxide and output a first-processed silicon wafer; an annealing module arranged in the processing chamber, which comprises a nitrogen injection assembly configured to receive the first-processed silicon wafer, inject nitrogen into the unprocessed silicon wafer according to the volume of the unprocessed silicon wafer, and perform annealing by heating the entire annealing module to a reaction temperature by the heating assembly and then stopping the heating and maintaining the current temperature to complete the annealing process and output a second-processed silicon wafer; a transfer module configured to receive the second-processed silicon wafer transferred by the annealing module and transfer the second-processed silicon wafer; at least one set of polishing modules, which comprises a sliding assembly (1) and two sets of polishing assemblies (2) slidably connected to the sliding assembly (1), the two sets of polishing assemblies (2) being arranged opposite to each other, the polishing modules being configured to receive the second-processed silicon wafer transferred by the transfer module, remove the oxide layer on the surface of the silicon wafer by polishing to generate a processed silicon wafer, and output the processed silicon wafer to the transfer module; the polishing assembly (2) comprises a sliding block (21) slidably connected to the sliding assembly (1), a polishing main body (22) mounted at one end of the sliding block (21) away from the sliding assembly (1), a driving module (23) connected to the bottom of the polishing main body (22), a driving telescopic rod (24) connected to one end of the polishing main body (22) away from the sliding block (21), and a polishing disc (25) connected to the top end of the driving telescopic rod (24); a storage module configured to receive and store the processed silicon wafer and maintain the properties of the processed silicon wafer.

2. A monolithic semiconductor rapid thermal processing system as defined in claim 1, wherein: The first-processed silicon wafer comprises a surface silicon oxide protective layer and an internal silicon lattice that has not undergone annealing; the thickness of the silicon oxide protective layer is uneven. The second-processed silicon wafer comprises a surface silicon oxide protective layer and an internal silicon lattice that has undergone annealing. The processed silicon wafer has no surface silicon oxide protective layer and an internal silicon lattice that has undergone annealing.

3. The single wafer rapid annealing system according to claim 1, wherein: if the oxidation module is started, the vacuum assembly evacuates all the gas in the processing chamber, the oxygen injection assembly injects oxygen into the processing chamber, and the processing chamber is heated to perform oxidation processing; if the annealing module is started, the vacuum assembly evacuates all the gas in the processing chamber, the nitrogen injection assembly injects nitrogen into the processing chamber, and the processing chamber is heated to perform annealing processing.

4. A monolithic semiconductor rapid thermal processing system as defined in claim 3, wherein The annealing processing of the processing chamber by injecting nitrogen comprises the following steps: S1, heating: the temperature is increased to a preset temperature in the range of 1000-1200°C; the specific temperature depends on the type of silicon wafer and the required electrical properties. S2, holding: keep at a predetermined temperature for a period of time, from nine minutes to nine hours, the holding time depends on the type of silicon wafer and the required electrical properties, to ensure uniform distribution of temperature inside the silicon wafer, and make the dopant fully activated; S3, cooling: slow cooling of the silicon wafer to prevent the generation of new stress and defects in the process of rapid cooling, the cooling rate is set between nine degrees per minute to ninety degrees per minute.

5. A monolithic semiconductor rapid thermal processing system as defined in claim 1 wherein: The storage module stores the process, according to the type of silicon wafer and the required electrical properties of the processing completed, adjust the storage conditions; wherein, the storage conditions include low temperature storage, dry storage and dustproof storage.

6. A monolithic semiconductor rapid thermal processing system as defined in claim 1, wherein: The polishing module polishes the twice processed silicon wafer through two groups of polishing components (2), and the transfer module transfers the twice processed silicon wafer to the two groups of polishing components (2). The two groups of polishing components (2) are set to opposite rotating directions and the same rotating speed.

7. A monolithic semiconductor rapid thermal processing system as defined in claim 1 wherein: The sliding assembly (1) comprises a base (11), and two groups of supports (12) are arranged on the top of the base (11). The two groups of supports (12) are symmetrically arranged, and a sliding rod (13) is installed between the two groups of supports (12). The bottom of the sliding rod (13) is connected with the top of the base (11).

8. A monolithic semiconductor rapid thermal processing system as claimed in claim 7, wherein: The driving telescopic rod (24) comprises an outer sleeve rod (241) inserted into the polishing main body (22), an inner rod (242) slidably connected inside the outer sleeve rod (241), a fixed plate (243) inserted into the top of the inner rod (242), and the polishing disc (25) inserted into the top of the inner rod (242). The fixed plate (243) is arranged on the bottom of the polishing disc (25).

9. A monolithic semiconductor rapid thermal processing system as claimed in claim 8, wherein: The polishing disc (25) is provided with a chip guide groove (251) away from one end of the driving telescopic rod (24). The polishing disc (25) is provided with a chip removal groove (252) away from one end face of the driving telescopic rod (24). The chip removal groove (252) is provided with a chip collection groove (253) on one side.

Images