Sputtering device and equipment for low-damage film layer of perovskite solar cell

Abstract

The invention relates to a sputtering device and equipment for a low-damage film layer of a perovskite solar cell. The sputtering device is located in the sputtering equipment, the substrate is located in the sputtering equipment and performs linear motion, and when the substrate passes through the sputtering device, sputtering coating can be performed on the substrate; the sputtering device comprises a target seat, two sputtering cathodes are arranged in the target seat, and the two sputtering cathodes are symmetrically arranged; target materials are arranged on the surfaces of the two sputtering cathodes, and each sputtering cathode is provided with a plane perpendicular to the target materials. The sputtering cathode is obliquely arranged towards the opening, and the included angle between the two planes is set as A which is an obtuse angle. According to the invention, the two sputtering cathodes are obliquely arranged, so that the damage of particles generated when the sputtering cathodes work to the perovskite light absorption layer on the substrate can be reduced, and the qualified rate of the whole substrate plated with the perovskite light absorption layer is ensured.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of sputtering coating, in particular to a sputtering device and equipment for low-damage film layer of perovskite solar cell. BACKGROUND

[0002] The existing structure of perovskite solar cell (PSC) is usually composed of multiple layers of functional materials, aiming to efficiently absorb light energy and convert it into electrical energy. The perovskite solar cell specifically includes a transparent conductive substrate (ITO / FTO), a hole transport layer (HTL, p-type), a perovskite light-absorbing layer (Perovskite, hereinafter referred to as PVK), an electron transport layer (ETL, n-type), and a top electrode (metal or transparent electrode), etc.

[0003] In perovskite solar cells (PSC), atomic layer deposition (ALD), reactive plasma deposition (RPD), and sputtering (Sputtering) are important technologies for preparing The electron transport layer (ETL) has its own advantages and disadvantages, as follows: 1) : Advantages: ultra-thin, dense, and non-damaging, suitable for high-efficiency laboratory devices (such as >25% PSC), low-temperature process compatible with flexible substrates. Disadvantages: slow deposition, high cost, and difficult mass production.

[0004] Application scenarios: research-level high-precision devices, and top-layer ETL of stacked cells.

[0005] 2) : Advantages: low-temperature and low-damage, directly deposited on perovskite, suitable for flexible / rigid devices, thin film quality close to ALD, and rate superior to ALD. Disadvantages: high equipment cost, and doping uniformity needs to be optimized.

[0006] Application scenarios: small and medium-sized area high-efficiency PSC, and flexible photovoltaic pilot.

[0007] 3) Sputtering : Advantages: high speed and low cost, suitable for large-area mass production (such as component-level production), mature process, and easy doping (such as FTO target material). Disadvantages: high-energy particle damage to perovskite, and annealing requirement limits flexible application.

[0008] Application scenarios: rigid PSC mass production, and commercialized products with moderate efficiency requirements.

[0009] In summary, the three technologies each have their own advantages: ALD is the "gold standard" in the laboratory, but is difficult to mass-produce; RPD is a potential option for flexible / high-efficiency devices; sputtering equipment cannot be used in mass production because the plasma it produces damages the PVK layer. Therefore, a sputtering device for the perovskite solar cell process is proposed to solve the above problems. Summary of the Invention

[0010] The present invention provides a sputtering device and equipment for low-damage film layers of perovskite solar cells, which can reduce the damage of particles (positive ions, electrons) generated during the operation of the sputtering cathode to the perovskite light-absorbing layer on the substrate, thereby ensuring the qualified rate of the entire substrate coating.

[0011] To achieve the above-mentioned purpose, the present invention adopts the following technical solutions: A sputtering device for a low-damage film layer of a perovskite solar cell is used in a sputtering device, wherein the sputtering device is located in the middle of the sputtering device, and a substrate is located in the sputtering device and performs linear motion. When passing through the sputtering device, the substrate can be sputter-coated. The sputtering device includes a target seat having an opening, and the substrate is located outside the target seat and can be arranged directly opposite the opening. Two sputtering cathodes are provided in the target seat, and the two sputtering cathodes are arranged tilted toward the opening and symmetrically arranged. Target materials are provided on the adjacent side walls of the two sputtering cathodes for generating target atoms. Each of the sputtering cathodes has a plane perpendicular to the target material, and the angle between the two planes is set to A, and A is an obtuse angle.

[0012] Preferably, the value range of A is 120°-150°.

[0013] Preferably, the projection of the opening on the substrate is a first projection, and the length of the first projection in the length direction of the substrate is L1; The central axes of the two sputtering cathodes form two first projection lines on the substrate, and the distance between the two first projection lines in the length direction of the substrate is L2; The central axes of the two targets form two second projection lines on the substrate, and the distance between the two second projection lines in the length direction of the substrate is L3; And the L3 <L1<L2。

[0014] Preferably, an auxiliary anode is provided on an inner side wall of the target base away from the substrate.

[0015] Preferably, two auxiliary anodes are provided, and the two auxiliary anodes are symmetrically arranged with respect to a symmetry plane of the two sputtering cathodes.

[0016] Preferably, the two auxiliary anodes each have a free portion and a fixed portion, and the angle between the free portions of the two auxiliary anodes is B, and the value range of B is 20°-40°.

[0017] Preferably, both side walls of the target base are provided with auxiliary cathodes, and the auxiliary cathodes are provided with a fixed portion and a free portion; The free ends of the two auxiliary cathodes are spaced apart to form an opening of the target base.

[0018] Preferably, the auxiliary cathode includes a mounting portion and an adsorption portion; The mounting portion is perpendicular to the substrate, and the adsorption portion is connected to the end of the mounting portion close to the substrate; The adsorption portion is located below the sputtering cathode, and two adjacent ends of the adsorption portions are spaced apart to form an opening.

[0019] Preferably, the adsorption portion is arranged horizontally or inclined, and the connecting end of the adsorption portion and the mounting portion is farther away from the substrate than the end of the adsorption portion away from the mounting portion.

[0020] Compared with the prior art, the present invention has the following beneficial effects: 1. The two sputtering cathodes are set at an angle A, and A is an obtuse angle, so that the targets on the two sputtering cathodes are no longer facing the substrate, but are set at a certain angle to the substrate. The target is set parallel to the substrate compared to the original setting, and the distance between the target and the substrate is also increased. To a certain extent, the amount of plasma flying onto the substrate can be reduced, reducing the damage to the coating on the substrate surface.

[0021] 2. The two targets are also set at a certain angle to form a certain limited space. The opening moving toward the substrate will be smaller than the original setting of the target facing the substrate, which will limit the movement space of the positive ions, thereby reducing the amount of plasma (mainly positive ions) flying onto the substrate to a certain extent, especially reducing the area of ​​plasma action on the PVK layer on the substrate surface, thereby greatly reducing the damage to the PVK layer on the substrate surface and ensuring the qualified rate and coating rate of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the specific embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0023] Figure 1 is an overall diagram of a sputtering device according to an embodiment of the present invention; Figure 2 Schematic diagram of the projection of the central axes of two sputtering cathodes, the central axes of two targets, and the openings on a substrate in an embodiment of the present invention; Figure 3 Schematic diagram of a sputtering device according to an embodiment of the present invention.

[0024] Description of reference numerals: 1. Target holder; 2. Substrate; 3. Opening; 4. Sputtering cathode; 5. Plane; 6. Target; 7. Auxiliary anode; 8. Auxiliary cathode; 81. Fixing part; 82. Adsorption part; 9. Symmetry plane; 10. Reciprocating transport mechanism; 11. Mobile platform 1; 12. Mobile platform 2; 13. Material transport platform; 14. Equipment body; 15. Mechanical pump group 1; 16. Mechanical pump group 2; 17. Mechanical pump group 3; 18. Substrate rack. DETAILED DESCRIPTION

[0025] The technical solution of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0026] In the description of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely to facilitate and simplify the description of the present invention. They are not intended to indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation, and therefore should not be construed as limitations on the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0027] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of these terms in the present invention based on the specific circumstances.

[0028] The embodiment of the present application provides a sputtering device for low-damage film layer of perovskite solar cell, which performs sputtering film coating on a substrate 2 and specifically comprises a target seat 1, two sputtering cathodes 4 are arranged in the target seat 1, and the substrate 2 has a transparent conductive substrate (ITO / FTO), a hole transport layer (HTL, p type) and a perovskite light absorption layer (Perovskite). The sputtering particles are sputtered from the sputtering cathode 4 to the perovskite light absorption layer (Perovskite) layer, so as to form an electron transport layer (ETL, n type). Specifically, the target seat 1 has an opening 3, the substrate 2 is located outside the target seat 1 and can face the opening 3 directly. In the actual production process, the substrate 2 moves and passes through the opening 3, the sputtering cathode 4 in the target seat 1 works, the sputtered target atoms move to the surface of the substrate 2 through the opening 3 to form the perovskite light absorption layer (Perovskite) layer, and the sputtering process is completed.

[0029] The two sputtering cathodes 4 in the existing sputtering device are provided with target materials 6, and the target materials 6 face the opening 3 and the substrate 2. When the sputtering cathode 4 works, in addition to the particles required for film coating, plasma is also formed near the target material 6. The positive ions include target material 6 element positive ions, Ar+ and reaction gas positive ions, and the negative particles are basically negative electrons. The positive ions flying to the surface of the substrate 2 cause ion damage to the substrate 2, and the electrons flying to the surface of the substrate 2 cause electron thermal damage to the substrate 2. Because the target material 6 faces the substrate 2, more positive ions and negative ions fly to the surface of the substrate 2, thereby causing greater damage to the substrate 2. In order to solve the above problems, in the embodiment, the target material 6 is arranged to be away from the opening 3, and the substrate 2 is arranged to be away from the target material 6. Figure 1 ​As shown, the side walls of the targets 6 on the two sputtering cathodes 4 are arranged close to each other, and the targets 6 are arranged tilted toward the opening 3. Each sputtering cathode 4 has a plane 5 perpendicular to the target 6, and the angle between the two planes 5 is set to A, and A is set to an obtuse angle, so that the targets 6 on the two sputtering cathodes 4 are no longer directly facing the substrate 2, but form a certain angle with the substrate 2. Compared with the original arrangement of the targets 6 parallel to the substrate 2, the distance between the targets 6 and the substrate 2 is also increased, which can reduce the amount of plasma flying onto the substrate 2 to a certain extent, and reduce the damage to the coating on the substrate surface. Moreover, because most of the plasma will be located near the target 6, especially They are positive ions, most of which are in the target surface area of ​​the target material 6 (the glow in this area is the strongest). At this time, the two targets 6 are set at a certain angle, which will form a certain limited space. The opening 3 moving toward the substrate 2 will be smaller than the original target material 6 facing the substrate 2, which will limit the movement space of the positive ions, thereby reducing the number of plasma (mainly positive ions) flying onto the substrate 2 to a certain extent, especially greatly reducing the effective area of ​​the plasma on the PVK layer on the substrate surface, thereby reducing the damage to the PVK layer on the surface of the substrate 2, ensuring the qualified rate of the substrate 2, and also ensuring the space required for the sputtering of the target atoms, ensuring the coating rate of the PVK layer on the substrate 2.

[0030] It should be noted that since some of the PVK film layer formed on the substrate 2 will be unstable in adsorption, a small amount of positive ions are still needed to act on the PVK film layer to knock off the unstable target atoms adsorbed thereon. Therefore, it is necessary to tilt the target material 6 toward the opening 3 to ensure the movement of this part of the positive ions, while also ensuring the number of target atoms moving to the substrate 2 and ensuring the coating rate of the substrate 2.

[0031] Preferably, in this embodiment, in order to ensure the coating rate, reduce the amount of plasma (mainly positive ions) flying to the PVK layer on the substrate 2, and reduce damage to the substrate 2, after a large number of experimental tests, the value range of A is set to 120°-150°. The test was conducted using the PVDS-300-A107 model, with a power of 5.5kW and a pressure of 0.35Pa at an angle to the cathode. The data are shown in the following table:

[0032] According to the above table, it can be concluded that when A is between 0° and 180°, the loss voltage is within the range that the substrate 2 can withstand, and in combination with the cost, the ease of mass production and the deposition rate, when A is between 120° and 150°, the deposition rate and the loss voltage are within the optimal selection. It should be noted that when A is 0°, it means that the plane 5 perpendicular to the target material 6 of the sputtering cathode 4 is arranged perpendicular to the substrate 2; when A is 180°, it means that the plane 5 perpendicular to the target material 6 of the sputtering cathode 4 is arranged parallel to the substrate 2, but when A is 180°, the two target materials 6 are opposite to each other and the target material 6 is perpendicular to the substrate 2, the space formed by the two has a smaller opening, the sputtering rate of the target atoms is greatly affected, and although the stability of the PVK film layer formed can be ensured, the formation rate is greatly reduced.

[0033] Preferably, the projection of the opening 3 on the substrate 2 is a first projection, and in the length direction of the substrate 2, the length of the first projection is L1; correspondingly, as shown in Figure 2 two first projection lines are formed on the substrate 2, and in the length direction of the substrate 2, the distance between the two first projection lines is L2; correspondingly, two second projection lines are formed on the substrate 2 by the center axes of the two target materials 6, and in the length direction of the substrate 2, the distance between the two second projection lines is L3; in this embodiment, L3 < L1 < L2, and the opening 3 is symmetrical about the symmetry plane 9, so that in the length direction of the substrate 2, the two ends of the opening 3 are located between the center axes of the target materials 6 and the symmetry axes of the sputtering cathodes 4 respectively, which not only ensures that the upper half (most) of the target material 6 is located within the opening 3, but also limits the length of the opening 3 and the movement space of the plasma towards the substrate 2, thereby reducing the number and area of the plasma flying to the substrate 2, which not only ensures that part of the plasma can move to the substrate 2 to achieve the purpose of knocking off the unstable particles adsorbed thereon to form a stable PVK film layer, but also cannot make the plasma too much to cause excessive damage to the formed PVK film layer.

[0034] Further, the target holder 1 is provided with an auxiliary anode 7, which can be used to absorb negative ions in the plasma generated by the operation of the sputtering cathode 4, thereby further reducing the number of negative ions moving to the PVK film layer on the surface of the substrate 2, and the auxiliary anode 7 is arranged on the inner side wall of the target holder 1 away from the substrate 2, so that the negative ions move away from the substrate 2, which can greatly reduce the number of negative ions moving to the PVK film layer on the substrate 2. Specifically, the auxiliary anode 7 adopts a direct current (DC) type.

[0035] Furthermore, two auxiliary anodes 7 are provided, wherein the two auxiliary anodes 7 are provided corresponding to the two sputtering cathodes 4, on both sides of the symmetry plane 9 of the two sputtering cathodes 4, so that each auxiliary anode 7 absorbs the negative ions generated by the sputtering cathode 4 on the same side, thereby ensuring the number of negative ions adsorbed; further, the auxiliary anodes 7 are made symmetrical about the symmetry plane 9, and the two sputtering cathodes 4 are also symmetrically provided about the symmetry plane 9, so that the two auxiliary anodes 7 adsorb the negative ions generated by the two sputtering cathodes 4 at the same rate, thereby indirectly ensuring the movement rate of other ions.

[0036] Specifically, each of the two auxiliary anodes 7 has a free portion and a fixed portion 81. The fixed portion 81 is parallel to the inner sidewall of the target base 1 and is fixed to the inner sidewall of the target base 1 by bolts. The free portion is tilted and forms a certain angle with the fixed portion 81, which is an obtuse angle. Thus, it is tilted toward the symmetry plane 9 of the two sputtering cathodes 4. The end of the free portion can be closer to the sputtering cathode 4, absorbing negative ions faster. In addition, there is an angle B between the free portions of the two auxiliary anodes 7. In this embodiment, the value range of the angle B is 20°-40°, so that the ends of the two free portions are close to the symmetry plane 9 of the two sputtering cathodes 4, but not too far away, resulting in a reduced ability to adsorb negative ions. It should be noted that the close proximity of the two free ends can act as a large anode, with a better adsorption effect. Specifically, the auxiliary cathode 8 adopts a direct current (DC) type.

[0037] Preferably, auxiliary cathodes 8 are provided on both side walls of the target base 1, and the auxiliary cathodes 8 can be used to absorb positive ions generated by the sputtering cathode 4, thereby further reducing the number of positive ions moving to the PVK film layer on the substrate 2; wherein the auxiliary cathode 8 is provided with a fixed end and a free end, wherein the fixed end is fixed on the side wall of the target base 1, and the free end is located below the sputtering cathode 4 and close to the sputtering cathode 4, for adsorbing positive ions, and the free ends of the two auxiliary cathodes 8 are spaced apart to form an opening 3 for ions to pass through, which not only forms the opening 3, but also makes the adsorption end of the auxiliary cathode 8 located between the sputtering cathode 4 and the substrate 2, so that it is easier to adsorb positive ions.

[0038] Specifically, the auxiliary cathode 8 includes a mounting portion and an adsorption portion 82, wherein the mounting portion is perpendicular to the substrate 2 and is mounted on the side wall of the target holder 1, and the adsorption portion 82 is connected to the end of the mounting portion close to the substrate 2, and the end of the adsorption portion 82 away from the mounting portion is located below the auxiliary cathode 8, and the ends (free ends) of two adjacent adsorption portions 82 are spaced apart to form an opening 3 for particles to pass through. Specifically, the mounting portion and the adsorption portion 82 are integrally formed. In this embodiment, the adsorption portion 82 is horizontally arranged, thereby forming an L-shaped structure with the mounting portion for ease of processing. In another embodiment, the adsorption portion 82 can be tilted, and the end connecting the adsorption portion 82 to the mounting portion is further away from the substrate 2 than the end of the adsorption portion 82 away from the mounting portion, so that the end of the adsorption portion 82 away from the mounting portion is tilted toward the substrate 2. Therefore, under the premise that the length of the opening 3 is constant, the adsorption area of ​​the adsorption portion 82 is larger, thereby achieving a better adsorption effect of positive ions.

[0039] In summary, the two sputtering cathodes 4 are set at an angle A, and the angle A is set at various angles, and then combined with the auxiliary cathode 8 and the auxiliary anode 7 and then combined again. The PVDS-300-A107 model is used for testing. The power of the diagonal cathode is 5.5kW and the pressure is 0.35Pa. After the experiment, the following table is obtained:

[0040] As can be seen from the above, according to the above table, when A is between 0° and 180°, the loss voltage is within the tolerable range of the substrate. At the same time, considering the cost, difficulty of mass production and deposition rate, when the angle A between the two planes 5 on the sputtering cathodes 4 is 120°-150°, and when the auxiliary cathode and auxiliary anode are used at the same time, the damage value is relatively low and the coating rate of the PVK film layer is guaranteed. The deposition rate and loss voltage are both within the optimal range. Of course, using a bias power supply instead of the auxiliary cathode 8 DC power supply can further reduce the damage value.

[0041] The present invention also discloses a sputtering device, such as Figure 3As shown, it includes a reciprocating transport mechanism 10, a moving platform 11, a moving platform 2 12 and an equipment body 14. The reciprocating transport mechanism 10 is composed of a motor, a belt and a bearing. The equipment body 14 includes a feed chamber, a transition chamber 1, a buffer chamber 1, a process chamber 1, a buffer chamber 2, a process chamber 2, a process chamber 3, a buffer chamber 3, a transition chamber 2 and a discharge chamber. A gate valve 1 (GV1) is provided at the inlet of the feed chamber, a gate valve 2 (GV2) is provided between the feed chamber and the transition chamber 1, a gate valve 3 (GV3) is provided between the transition chamber 1 and the buffer chamber 1, the buffer chamber 1, the process chamber 1, the buffer chamber 2, the process chamber 2, the process chamber 3 and the buffer chamber 3 are connected in sequence, a gate valve 4 (GV4) is provided between the buffer chamber 3 and the transition chamber 2, a gate valve 5 (GV5) is provided between the transition chamber 2 and the discharge chamber 2, and a gate valve 6 (GV6) is provided at the outlet of the discharge chamber. It should be noted that the reciprocating transport mechanism 10, the mobile platform 1 11, and the mobile platform 2 12 are all composed of motors, belts, and bearings, which are spliced ​​into a complete transmission line in the device to assist the substrate in entering and exiting the chamber.

[0042] The mobile platform 11 is used to move the transport platform 13 equipped with the substrate rack 22 (the substrate rack 22 is equipped with a substrate (referring to the object to be coated, here usually refers to a glass substrate)) to the feed port, and then the substrate rack 22 enters the equipment body 14, and passes through the feed chamber, transition chamber 1, buffer chamber 1, process chamber 1, buffer chamber 2, process chamber 2, process chamber 3, buffer chamber 3, transition chamber 2 to the discharge chamber, and finally out of the discharge chamber to the substrate rack 22; the buffer chamber is not necessary, but considering mass production, adding buffer chambers 1 and 3 will reduce the cycle time. , to improve production capacity, buffer chamber two is to isolate the atmosphere between process chamber one and process chambers two and three; mobile platform two 12 is located between the reciprocating transport mechanism 10 and the discharge port of the feed chamber, and is used to move the transport platform 13 equipped with the substrate rack 22 (the substrate is taken out) at the outlet of the feed chamber to the feed port of the reciprocating transport mechanism 10, and the reciprocating transport mechanism 10 is located between mobile platform one 11 and mobile platform two 12, and transports the transport platform 13 equipped with the substrate rack 22 to mobile platform one 11, and loads the substrate on the substrate rack 22, and repeats the cycle. The feed chamber is connected with a mechanical pump group 15, the transition chamber 1, buffer chamber 1, buffer chamber 2, buffer chamber 3 and transition chamber 2 are connected with a mechanical pump group 2 16, and the discharge chambers are connected with a mechanical pump group 3 17. The three groups of mechanical pump groups are used to evacuate the feed chamber, transition chamber 1, buffer chamber 1, buffer chamber 2, buffer chamber 3, transition chamber 2 and discharge chamber to achieve a corresponding vacuum working environment. Specifically, the mechanical pump group 2 16 includes a mechanical pump and multiple exhaust paths, each exhaust path corresponding to the transition chamber 1, buffer chamber 1, buffer chamber 2, buffer chamber 3, transition chamber 2 and discharge chamber. Three and transition chamber two, and each exhaust path is provided with at least one electromagnetic control valve to control the on-off of each exhaust path. Of course, in another embodiment, transition chamber one, buffer chamber one, buffer chamber two, buffer chamber three and transition chamber two can be connected to a mechanical pump group respectively to perform vacuum exhaust; the process chamber one, process chamber two and process chamber three are correspondingly provided with the above-mentioned sputtering device for cooperating with the substrate 18 to perform sputtering coating. Of course, the target material on the sputtering cathode in each sputtering device can be different, the same, or partially the same. It should be noted that the specific structure of the feed chamber, transition chamber one, buffer chamber one, buffer chamber two, buffer chamber three, transition chamber two and discharge chamber can adopt the existing technology. Except for the sputtering device described above, the remaining structures of process chamber one, process chamber two and process chamber three all adopt the existing technology.

[0043] Correspondingly, the sputtering process of the sputtering equipment is as follows: 1. The substrate rack 22 containing the substrate is loaded onto the transport platform 13 and transported to the feed port of the feed chamber by the mobile platform. Once the gate valve is opened, the substrate rack 22 is driven by the wheel (not marked) at the bottom of the transport platform 13 and completely enters the feed chamber, and then the gate valve is closed.

[0044] 2. Use the corresponding mechanical pump group to evacuate the feed chamber to obtain the required pressure value, and fill the transition chamber 1 with dry air (nitrogen is better) in advance until the pressure in the cavity increases to the pressure of the feed chamber. Then open the gate valve 2 to allow the substrate rack 22 to completely enter the transition chamber 1, and close the gate valve 2.

[0045] 3. Air is pumped from transition chamber 1 using the corresponding mechanical pump assembly until the pressure inside reaches a certain value (10-3 Pa). At this point, substrate holder 22 moves to gate valve 3 (typically positioned by a sensor). Argon gas is then introduced to balance the pressures in transition chamber 1 and buffer chamber 1. Once the pressures in both chambers are balanced, gate valve 3 is opened, allowing substrate holder 22 to fully enter buffer chamber 1. Gate valve 3 is then closed. It is important to note that substrate holder 22 travels at high speed while passing through the feed chamber and transition chamber 1. Upon entering buffer chamber 1, the substrate holder 22 switches from high speed to low speed.

[0046] 4. The substrate rack 22 maintains a low speed and passes through the buffer chamber 1, process chamber 1, buffer chamber 2, process chamber 2, process chamber 3, and buffer chamber 3 in turn for coating. It should be noted that when the substrate rack 22 enters the process chamber 1, process chamber 2, and process chamber 3, the two sputtering cathodes therein have completed pre-sputtering, and when the substrate rack 22 passes through the sputtering cathode in the process chamber 1, the sputtering cathode in the process chamber 2, and the sputtering cathode in the process chamber 3, it will be coated with a film layer.

[0047] 5. After the coating is completed, nitrogen is flushed into the transition chamber 2 to reach 0.5Pa, the gate valve 4 is opened, and the substrate enters the transition chamber 2 from the buffer chamber 3. The gate valve 4 is closed, and nitrogen is continuously flushed into the transition chamber 2 to atmospheric pressure. The gate valve 5 is opened, and the substrate is moved from the transition chamber 2 to the discharge chamber, and the substrate process flow is completed.

[0048] 6. The transport platform 13 with the substrate rack 22 at the discharge port is transported to the feed port of the reciprocating transport mechanism 10 through the mobile platform, and then the substrate rack 22 enters the transport platform 13 on the reciprocating transport mechanism 10, and is transported to the discharge port of the reciprocating transport mechanism 10 through the reciprocating transport mechanism 10, and the substrate rack 22 is transported to the transport platform 13 on the mobile platform 11, and the coating process is completed once.

[0049] 7. Load the substrate onto the substrate rack 22 on the material transport platform 13 on the movable platform 11, and perform PVK film coating again through the above steps.

[0050] The above embodiments are only preferred embodiments of the present invention and cannot be used to limit the scope of protection of the present invention. Any non-substantial changes and replacements made by technicians in this field on the basis of the present invention fall within the scope of protection required by the present invention.

Claims

1. A sputtering device for low-damage film layers of perovskite solar cells, used in sputtering equipment to perform sputtering coating on substrates, characterized in that: The target base comprises a target base having an opening, and the substrate is located outside the target base and can be arranged facing the opening; Two sputtering cathodes are provided in the target holder, the two sputtering cathodes are arranged tilted toward the opening, and the two sputtering cathodes are arranged symmetrically; Target materials are provided on adjacent side walls of the two sputtering cathodes for generating target atoms; Each of the sputtering cathodes has a plane perpendicular to the target material, and the angle between the two planes is set to A, and A is an obtuse angle.

2. The sputtering device according to claim 1, wherein The value range of A is 120°-150°.

3. The sputtering device according to claim 1, wherein: The projection of the opening on the substrate is a first projection, and the length of the first projection in the length direction of the substrate is L1; The central axes of the two sputtering cathodes form two first projection lines on the substrate, and the distance between the two first projection lines in the length direction of the substrate is L2; The central axes of the two targets form two second projection lines on the substrate, and the distance between the two second projection lines in the length direction of the substrate is L3; And the L3 <L1<L2。 4. The sputtering device according to claim 3, characterized in that An auxiliary anode is provided on the inner side wall of the target base away from the substrate.

5. The sputtering device according to claim 4, characterized in that There are two auxiliary anodes, and the two auxiliary anodes are symmetrically arranged with respect to a symmetry plane of the two sputtering cathodes.

6. The sputtering device according to claim 5, characterized in that The two auxiliary anodes each have a free portion and a fixed portion. The angle between the free portions of the two auxiliary anodes is B, and the value range of B is 20°-40°.

7. The sputtering device according to claim 4, characterized in that Auxiliary cathodes are provided on both side walls of the target base, and the auxiliary cathodes are provided with a fixed portion and a free portion; The free ends of the two auxiliary cathodes are spaced apart to form an opening of the target base.

8. The sputtering device according to claim 7, characterized in that The auxiliary cathode includes a mounting portion and an adsorption portion; The mounting portion is perpendicular to the substrate, and the adsorption portion is connected to the end of the mounting portion close to the substrate; The adsorption portion is located below the sputtering cathode, and two adjacent ends of the adsorption portions are spaced apart to form an opening.

9. The sputtering device according to claim 8, characterized in that The adsorption portion is arranged horizontally or inclined, and the end portion of the adsorption portion connected to the mounting portion is further away from the substrate than the end portion of the adsorption portion away from the mounting portion.

10. A sputtering device, characterized in that: The sputtering device comprises the sputtering device according to any one of claims 1 to 9.

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