A sputtering device and equipment for low-damage film layer of perovskite solar cell

Abstract

The application relates to a sputtering device and equipment for a low-damage film layer of a perovskite solar cell. The sputtering device is located in the sputtering equipment, a substrate is linearly moved in the sputtering equipment, and the substrate can be sputtered and plated when passing through the sputtering device; the sputtering device comprises a target seat, two sputtering cathodes are arranged in the target seat, and the two sputtering cathodes are arranged in a symmetrical mode; target materials are arranged on the surfaces of the two sputtering cathodes, each sputtering cathode has a plane perpendicular to the target material; the sputtering cathodes are arranged in a tilt mode towards the opening, and the included angle between the two planes is A, and A is an obtuse angle. The two sputtering cathodes are arranged in a tilt mode, the damage of particles generated during the work of the sputtering cathodes to a perovskite light-absorbing layer on the substrate is reduced, and the qualified rate of the whole substrate plated with the perovskite light-absorbing layer is ensured.

Description

Technical Field

[0001] This invention relates to the field of sputtering coating technology, and in particular to a sputtering apparatus and equipment for low-damage coatings of perovskite solar cells. Background Technology

[0002] Existing perovskite solar cells (PSCs) typically consist of multiple layers of functional materials designed to efficiently absorb light energy and convert it into electrical energy. Specifically, a perovskite solar cell comprises a transparent conductive substrate (ITO / FTO), a hole transport layer (HTL, p-type), a perovskite light-absorbing layer (PVK, hereinafter referred to as PVK), an electron transport layer (ETL, n-type), and a top electrode (metallic or transparent electrode).

[0003] In perovskite solar cells (PSCs), atomic layer deposition (ALD), reactive plasma deposition (RPD), and sputtering are the main methods for fabricating them. The key technologies of the electronic transport layer (ETL) each have their own advantages and disadvantages, as follows:

[0004] 1) Advantages: Ultra-thin, dense, and non-destructive, suitable for high-efficiency laboratory devices (e.g., >25% PSC), and compatible with flexible substrates for low-temperature processes. Disadvantages: Slow deposition, high cost, and difficult to mass-produce.

[0005] Applicable scenarios: research-grade high-precision devices, ETL of the top layer of stacked batteries.

[0006] 2) Advantages: Low temperature and low damage; direct deposition on perovskite; suitable for flexible / rigid devices; film quality close to ALD; better deposition rate than ALD. Disadvantages: Higher equipment cost; doping uniformity needs optimization.

[0007] Applicable scenarios: Small and medium-sized high-efficiency PSC, flexible photovoltaic pilot projects.

[0008] 3) Sputtering Advantages: High speed and low cost, suitable for large-area mass production (such as module-level production), mature technology, easy to dope (such as FTO target material). Disadvantages: High-energy particles damage perovskites, annealing requirements limit flexible applications.

[0009] Applicable scenarios: Mass production of rigid PSCs and commercial products with moderate efficiency requirements.

[0010] In summary, each of the three technologies has its own advantages: ALD is the "gold standard" in the laboratory, but it is difficult to mass-produce; RPD is a potential option for flexible / high-efficiency devices; sputtering equipment cannot be used in mass production because the plasma it generates damages the PVK layer. Therefore, a sputtering equipment for perovskite solar cell manufacturing process is proposed to solve the above problems. Summary of the Invention

[0011] This invention provides a sputtering apparatus and equipment for low-damage films in perovskite solar cells, which can reduce the damage to the perovskite light-absorbing layer on the substrate by particles (positive ions, electrons) generated during the operation of the sputtering cathode, and ensure the overall substrate coating yield.

[0012] To achieve the aforementioned objective, the present invention employs the following technical solution:

[0013] A sputtering apparatus for low-damage films in perovskite solar cells is disclosed. The apparatus is located in the center of the sputtering equipment, and a substrate moves linearly within the equipment. As the substrate passes the sputtering apparatus, a sputtering coating is applied. The sputtering apparatus includes a target holder with an opening. The substrate is located outside the target holder and can be positioned directly opposite the opening. Two sputtering cathodes are disposed within the target holder, tilted towards the opening and symmetrically arranged. Target material is disposed on the adjacent sidewalls of the two sputtering cathodes to generate target atoms. Each sputtering cathode has a plane perpendicular to the target material, and the included angle between the two planes is set to A, where A is an obtuse angle.

[0014] Preferably, the value of A is in the range of 120°-150°.

[0015] Preferably, the projection of the opening onto the substrate is a first projection, and the length of the first projection is L1 along the length direction of the substrate;

[0016] The central axes of the two sputtering cathodes form two first projection lines on the substrate, and the distance between the two first projection lines is L2 along the length of the substrate.

[0017] The central axes of the two targets form two second projection lines on the substrate, and the distance between the two second projection lines is L3 along the length of the substrate;

[0018] And the L3 <L1<L2。

[0019] Preferably, an auxiliary anode is provided on the inner sidewall of the target holder away from the substrate.

[0020] Preferably, there are two auxiliary anodes, which are symmetrically arranged about the plane of symmetry of the two sputtering cathodes.

[0021] Preferably, both auxiliary anodes have a free portion and a fixed portion, and the included angle between the free portions of the two auxiliary anodes is B, wherein the value of B is in the range of 20°-40°.

[0022] Preferably, auxiliary cathodes are provided on both side walls of the target base, and the auxiliary cathodes are provided with a fixed part and a free part;

[0023] The free ends of the two auxiliary cathodes are spaced apart to form an opening in the target holder.

[0024] Preferably, the auxiliary cathode includes a mounting portion and an adsorption portion;

[0025] The mounting portion is perpendicular to the substrate, and the adsorption portion is connected to the end of the mounting portion near the substrate;

[0026] The adsorption section is located below the sputtering cathode, and the two adjacent ends of the adsorption section are spaced apart to form an opening.

[0027] Preferably, the adsorption portion is arranged horizontally or at an angle, and the end of the adsorption portion that connects to the mounting portion is further away from the substrate than the end of the adsorption portion that is further away from the mounting portion.

[0028] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0029] 1. By setting the two sputtering cathodes at an angle A, where A is an obtuse angle, the targets on the two sputtering cathodes are no longer directly facing the substrate, but are set at a certain angle to the substrate. Compared to when the targets were originally parallel to the substrate, the distance between the targets and the substrate is also increased. To a certain extent, this can reduce the amount of plasma that flies onto the substrate and reduce damage to the coating on the substrate surface.

[0030] 2. The two targets are also set at a certain angle to form a certain limiting space. The opening for movement towards the substrate is smaller than the original target setting facing the substrate. This restricts the movement space of positive ions, thereby reducing the amount of plasma (mainly positive ions) that flies onto the substrate to a certain extent. In particular, it reduces the area of ​​plasma action on the PVK layer on the substrate surface, thereby significantly reducing damage to the PVK layer on the substrate surface and ensuring the substrate's pass rate and coating rate. Attached Figure Description

[0031] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0032] Figure 1 This is an overall view of the sputtering apparatus in an embodiment of the present invention;

[0033] Figure 2 This is a schematic diagram of the projection of the central axes of the two sputtering cathodes, the central axes of the two targets, and the openings on the substrate in an embodiment of the present invention.

[0034] Figure 3 This is a schematic diagram of the sputtering device according to an embodiment of the present invention.

[0035] Explanation of reference numerals in the attached figures:

[0036] 1. Target holder; 2. Substrate; 3. Opening; 4. Sputtering cathode; 5. Plane; 6. Target material; 7. Auxiliary anode; 8. Auxiliary cathode; 81. Fixing part; 82. Adsorption part; 9. Symmetry plane;

[0037] 10. Reciprocating transport mechanism; 11. Mobile platform one; 12. Mobile platform two; 13. Material transport platform; 14. Main body of equipment; 15. Mechanical pump unit one; 16. Mechanical pump unit two; 17. Mechanical pump unit three; 18. Substrate frame. Detailed Implementation

[0038] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0039] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0040] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of these terms in this invention based on the specific circumstances.

[0041] This invention provides a sputtering apparatus for low-damage coating of perovskite solar cells, used to sputter-deposit a substrate 2. Specifically, it includes a target holder 1 containing two sputtering cathodes 4. The substrate 2 already has a transparent conductive substrate (ITO / FTO), a hole transport layer (HTL, p-type), and a perovskite light-absorbing layer. Particles are sputtered onto the perovskite layer through the sputtering cathodes 4, forming an electron transport layer (ETL, n-type). Specifically, the target holder 1 has an opening 3, and the substrate 2 is located outside the target holder 1, directly facing the opening 3. During actual production, the substrate 2 moves and passes through the opening 3, while the sputtering cathodes 4 in the target holder 1 operate. Sputtered target atoms move through the opening 3 to the surface of the substrate 2 to form the perovskite layer, thus completing the sputtering process. Process.

[0042] In existing sputtering apparatuses, two sputtering cathodes 4 are each fitted with a target 6, which faces the opening 3 and thus the substrate 2. During operation, the sputtering cathodes 4 generate plasma near the target 6, in addition to the particles required for film deposition. The plasma contains positive ions from the target 6 element, Ar+, and reactive gas ions, and primarily negative electrons. Positive ions reaching the substrate 2 surface cause ionic damage, while electrons cause thermal damage. Because the target 6 faces the substrate 2, more positive and negative ions reach the substrate 2 surface, resulting in greater damage. To address these issues, in this embodiment, as... Figure 1As shown, the sidewalls of the targets 6 on the two sputtering cathodes 4 are arranged close together, and the targets 6 are tilted towards the opening 3. Each sputtering cathode 4 has a plane 5 perpendicular to the target 6, and the included angle between the two planes 5 is set as A, with A being an obtuse angle. Thus, the targets 6 on the two sputtering cathodes 4 are no longer directly facing the substrate 2, but rather at a certain angle to it. Compared to the original arrangement where the targets 6 were parallel to the substrate 2, the distance between the targets 6 and the substrate 2 is increased. This can, to some extent, reduce the amount of plasma that flies onto the substrate 2, reducing damage to the coating on the substrate surface. Furthermore, because most of the plasma will be located near the targets 6, especially... The plasma consists of positive ions, mostly located in the target surface area of ​​target material 6 (where the glow emission is strongest). At this time, the two targets 6 are set at a certain angle, which will form a certain confinement space. The opening 3 moving towards the substrate 2 will be smaller than the original target material 6 facing the substrate 2, which will restrict the movement space of positive ions. This will reduce the number of plasma (mainly positive ions) flying onto the substrate 2 to a certain extent, especially significantly reducing the area of ​​plasma action on the PVK layer on the substrate surface, thereby reducing damage to the PVK layer on the substrate 2 surface, ensuring the pass rate of the substrate 2, and also ensuring the space required for target atom sputtering, thus ensuring the coating rate of the PVK layer on the substrate 2.

[0043] It is important to know that some of the PVK film formed on substrate 2 is unstable, so a small number of positive ions are still needed to act on the PVK film to knock down the unstable target atoms. Therefore, the target material 6 needs to be tilted towards the opening 3 to ensure the movement of these positive ions, and at the same time ensure the number of target atoms that move to substrate 2, thus ensuring the coating rate of substrate 2.

[0044] Preferably, in this embodiment, in order to ensure the coating rate and reduce the amount of plasma (mainly positive ions) flying onto the PVK layer on substrate 2, thereby reducing damage to substrate 2, after extensive experimental testing, the value of A is set to be in the range of 120°-150°. A PVDS-300-A107 testing machine was used, with a power of 5.5kW at the oblique cathode and a pressure of 0.35Pa. The data are shown in the table below:

[0045]

[0046] According to the above table, it can be obtained that when A is between 0° and 180°, the loss voltage is within the tolerable range of the substrate 2. At the same time, considering the cost, the difficulty of mass production, and the deposition rate, when A is between 120° and 150°, both the deposition rate and the loss voltage are within the optimal selection. It should be noted that when A is 0°, it means that the plane 5 perpendicular to the target 6 of the sputtering cathode 4 is perpendicular to the substrate 2; when A is 180°, it means that the plane 5 perpendicular to the target 6 of the sputtering cathode 4 is parallel to the substrate 2. However, when A is 180°, the two targets 6 face each other directly, and the target 6 is perpendicular to the substrate 2, resulting in a smaller spatial opening formed by the two. The sputtering rate of the target atoms is greatly affected. Although the stability of the finally formed PVK film layer can be guaranteed, the formation rate is greatly reduced.

[0047] Preferably, the projection of the opening 3 on the substrate 2 is the first projection. In the length direction of the substrate 2, the length of the first projection is L1; correspondingly, as Figure 2 shown, the central axes of the two sputtering cathodes 4 form two first projection lines on the substrate 2. In the length direction of the substrate 2, the distance between the two first projection lines is L2; correspondingly, the central axes of the two targets 6 form two second projection lines on the substrate 2. In the length direction of the substrate 2, the distance between the two second projection lines is L3; in this embodiment, L3 < L1 < L2 is satisfied, and the opening 3 is symmetric about the symmetry plane 9. Thus, in the length direction of the substrate 2, the two end portions of the opening 3 are respectively located between the central axis of the target 6 and the symmetry axis of the sputtering cathode 4, which not only ensures that the upper part (most part) of the target 6 is located within the opening 3, but also limits the length of the opening 3, restricting the movement space of the plasma towards the substrate 2, thereby reducing the number and action area of the plasma flying onto the substrate 2. This not only ensures that part of the plasma can move to the substrate 2 to achieve the purpose of knocking off the unstable particles adsorbed thereon and forming a stable PVK film layer, but also prevents excessive plasma from causing excessive damage to the formed PVK film layer.

[0048] Furthermore, an auxiliary anode 7 is provided inside the target seat 1. The auxiliary anode 7 can be used to absorb the negative ions in the plasma generated by the operation of the sputtering cathode 4, thereby further reducing the number of negative ions moving to the PVK film layer on the surface of the substrate 2. Moreover, the auxiliary anode 7 is provided on the inner wall of the target seat 1 far from the substrate 2, causing the negative ions to move in the direction away from the substrate 2, which can more effectively reduce the number of negative ions moving to the PVK film layer on the substrate 2. Specifically, the auxiliary anode 7 adopts a direct current (DC) type.

[0049] Furthermore, two auxiliary anodes 7 are configured, with the two auxiliary anodes 7 corresponding to the two sputtering cathodes 4, positioned on both sides of the symmetry plane 9 of the two sputtering cathodes 4. Thus, each auxiliary anode 7 absorbs the negative ions generated by the sputtering cathode 4 on the same side, ensuring the number of negative ions adsorbed. Furthermore, the auxiliary anodes 7 are symmetrical about the symmetry plane 9, and the two sputtering cathodes 4 are also symmetrically positioned about the symmetry plane 9. Thus, the two auxiliary anodes 7 adsorb the negative ions generated by the two sputtering cathodes 4 at the same rate, indirectly ensuring the movement rate of other ions.

[0050] Specifically, both auxiliary anodes 7 have free portions and fixed portions 81. The fixed portions 81 are parallel to the inner wall of the target base 1 and are fixed to the inner wall of the target base 1 by bolts. The free portions are inclined and form a certain angle with the fixed portions 81, which is an obtuse angle. This allows them to be inclined towards the symmetrical plane 9 of the two sputtering cathodes 4, so that the ends of the free portions can be closer to the sputtering cathodes 4, resulting in faster absorption of negative ions. Moreover, there is an angle B between the free portions of the two auxiliary anodes 7. In this embodiment, the value of the angle B is in the range of 20°-40°, so that the ends of the two free portions are close to the symmetrical plane 9 of the two sputtering cathodes 4, but not too far apart, which would reduce the ability to adsorb negative ions. It should be noted that the two free ends being close together can act as a large anode, resulting in better adsorption. Specifically, the auxiliary cathodes 8 are of the direct current (DC) type.

[0051] Preferably, auxiliary cathodes 8 are provided on both sides of the target holder 1. The auxiliary cathodes 8 can be used to absorb the positive ions generated by the sputtering cathode 4, thereby further reducing the number of positive ions that move to the PVK film layer on the substrate 2. The auxiliary cathode 8 is provided with a fixed end and a free end. The fixed end is fixed on the side wall of the target holder 1, and the free end is located below and close to the sputtering cathode 4 for adsorbing positive ions. The free ends of the two auxiliary cathodes 8 are arranged alternately to form an opening 3 for ions to pass through. This not only forms an opening 3, but also makes the adsorption end of the auxiliary cathode 8 located between the sputtering cathode 4 and the substrate 2, thus making it easier to adsorb positive ions.

[0052] Specifically, the auxiliary cathode 8 includes a mounting portion and an adsorption portion 82. The mounting portion is perpendicular to the substrate 2 and mounted on the side wall of the target holder 1. The adsorption portion 82 is connected to the end of the mounting portion near the substrate 2, and the end of the adsorption portion 82 away from the mounting portion is located below the auxiliary cathode 8. The ends (free ends) of two adjacent adsorption portions 82 are spaced apart to form openings 3 for particles to pass through. Specifically, the mounting portion and the adsorption portion 82 are integrally formed. In this embodiment, the adsorption portion 82 is horizontally arranged, thus forming an L-shaped structure with the mounting portion, which facilitates processing. In another embodiment, the adsorption portion 82 can be inclined, and the end of the adsorption portion 82 connected to the mounting portion is further away from the substrate 2 than the end of the adsorption portion 82 away from the mounting portion. Thus, the end of the adsorption portion 82 away from the mounting portion is inclined towards the substrate 2, thereby increasing the adsorption area of ​​the adsorption portion 82 while maintaining a fixed opening length, resulting in better adsorption of positive ions.

[0053] In summary, by setting the two sputtering cathodes 4 at an angle A, and adjusting angle A to various angles, and combining them with the auxiliary cathode 8 and auxiliary anode 7, and using a PVDS-300-A107 testing machine, the power at the oblique cathode was 5.5kW and the pressure was 0.35Pa. The experimental results are shown in the following table:

[0054]

[0055] As can be seen from the table above, when A is between 0° and 180°, the voltage loss is within the acceptable range of the substrate. Considering cost, ease of mass production, and deposition rate, when the included angle A between the two sputtering cathodes 4 and the upper plane 5 is 120°-150°, and when the auxiliary cathode and auxiliary anode are used simultaneously, the damage value is relatively low and the deposition rate of the PVK film is guaranteed. The deposition rate and voltage loss are both within the optimal selection. Of course, using a bias power supply instead of the DC power supply of the auxiliary cathode 8 can further reduce the damage value.

[0056] The present invention also discloses a sputtering device, such as Figure 3As shown, the equipment includes a reciprocating transport mechanism 10, a first mobile platform 11, a second mobile platform 12, and a main body 14. The reciprocating transport mechanism 10 is composed of a motor, belts, and bearings. The main body 14 includes a feeding chamber, a first transition chamber, a first buffer chamber, a first process chamber, a second buffer chamber, a third process chamber, a third buffer chamber, a second transition chamber, and a discharge chamber. A valve 1 (GV1) is installed at the inlet of the feeding chamber. A valve 2 (GV2) is installed between the feeding chamber and the first transition chamber. A valve 3 (GV3) is installed between the first transition chamber and the first buffer chamber. The first buffer chamber, the first process chamber, the second buffer chamber, the second process chamber, the third process chamber, and the third buffer chamber are connected in sequence. A valve 4 (GV4) is installed between the third buffer chamber and the second transition chamber. A valve 5 (GV5) is installed between the second transition chamber and the second discharge chamber. A valve 6 (GV6) is installed at the outlet of the discharge chamber. It should be noted that the reciprocating transport mechanism 10, the first mobile platform 11, and the second mobile platform 12 are all composed of motors, belts, and bearings, which are spliced ​​together in the equipment to form a complete transmission line to assist the substrate in entering and exiting the chamber.

[0057] Mobile platform 11 is used to move the material transport platform 13, which carries the substrate holder 22 (the substrate holder 22 carries the substrate (referring to the item to be coated, usually glass substrate)), to the feed inlet. Then the substrate holder 22 enters the main body 14 of the equipment and passes through the feed chamber, transition chamber 1, buffer chamber 1, process chamber 1, buffer chamber 2, process chamber 2, process chamber 3, buffer chamber 3, transition chamber 2 to the discharge chamber, and finally exits from the discharge chamber to the substrate holder 22. The buffer chamber is not necessary, but from the perspective of mass production, adding buffer chambers 1 and 3 will reduce the cycle time. To increase production capacity, buffer chamber two is used to isolate the atmosphere between process chamber one and process chambers two and three; mobile platform two 12 is located between reciprocating transport mechanism 10 and the discharge port of the feeding chamber, and is used to move the material transport platform 13 with substrate holder 22 (substrate is removed) at the discharge port of the feeding chamber to the feeding port of reciprocating transport mechanism 10. Reciprocating transport mechanism 10 is located between mobile platform one 11 and mobile platform two 12, and transports the material transport platform 13 with substrate holder 22 to mobile platform one 11, loads the substrate on the substrate holder 22, and repeats the cycle. The feeding chamber is connected to mechanical pump group 15, while transition chamber 1, buffer chamber 1, buffer chamber 2, buffer chamber 3, and transition chamber 2 are connected to mechanical pump group 26. The discharge chamber is connected to mechanical pump group 37. These three sets of mechanical pumps evacuate the feeding chamber, transition chamber 1, buffer chamber 1, buffer chamber 2, buffer chamber 3, and discharge chamber to achieve a vacuum working environment. Specifically, mechanical pump group 26 includes a mechanical pump and multiple evacuation paths, each of which is connected to transition chamber 1, buffer chamber 1, buffer chamber 2, buffer chamber 3, and transition chamber 2, and the discharge chamber 17. The third and second transition chambers are equipped with at least one electromagnetic control valve on each extraction path to control the on / off state of each extraction path. In another embodiment, the first, second, and third transition chambers can each be connected to a mechanical pump group for vacuum extraction. The first, second, and third process chambers are equipped with the aforementioned sputtering devices for sputtering coating with the substrate 18. The target materials on the sputtering cathodes of each sputtering device can be different, the same, or partially the same. It should be noted that the specific structures of the feed chamber, the first, second, third, and fourth transition chambers can adopt existing technology. Except for the sputtering devices described above, the remaining structures of the first, second, and third process chambers all adopt existing technology.

[0058] Correspondingly, the sputtering process of the sputtering equipment is as follows:

[0059] 1. The substrate holder 22 containing the substrate is loaded onto the conveying platform 13 and transported by the mobile platform to the inlet of the feeding chamber. Once the gate valve is opened, the substrate holder 22 is driven by the wheels (not marked) at the bottom of the conveying platform 13 and fully enters the feeding chamber. Then the gate valve is closed.

[0060] 2. Use the corresponding mechanical pump set to evacuate the feed chamber to obtain the required pressure value, and fill the transition chamber one with dry air (nitrogen is better) in advance until the pressure inside the chamber increases to the pressure of the feed chamber. Then open the valve two to allow the substrate holder 22 to fully enter the transition chamber one, and close the valve two.

[0061] 3. The transition chamber 1 is evacuated using a corresponding mechanical pump set until its internal pressure reaches a certain value (10⁻³ Pa). At this point, the substrate holder 22 moves to valve 3 (usually positioned by a sensor). Argon gas is then introduced to balance the pressure in transition chamber 1 and buffer chamber 1. Once the pressures in the two chambers are balanced, valve 3 is opened, allowing the substrate holder 22 to fully enter buffer chamber 1. Valve 3 is then closed. It is important to note that the substrate holder 22 travels at high speed in the feed chamber and transition chamber 1, but its speed switches from high to low during its entry into buffer chamber 1.

[0062] 4. The substrate holder 22 maintains a low speed and sequentially passes through buffer chamber 1, process chamber 1, buffer chamber 2, process chamber 2, process chamber 3, and buffer chamber 3 for coating. It should be noted that when the substrate holder 22 enters process chamber 1, process chamber 2, and process chamber 3, the two sputtering cathodes inside have already completed pre-sputtering. As the substrate holder 22 passes through the sputtering cathodes in process chamber 1, process chamber 2, and process chamber 3, a film layer will be deposited on it.

[0063] 5. After the coating is completed, nitrogen gas is injected into the transition chamber 2 to reach 0.5 Pa. Valve 4 is opened, and the substrate enters the transition chamber 2 from the buffer chamber 3. Valve 4 is closed, and nitrogen gas is continuously injected into the transition chamber 2 until atmospheric pressure is reached. Valve 5 is opened, and the substrate moves from the transition chamber 2 to the discharge chamber. The substrate process is then completed.

[0064] 6. The material conveying platform 13 with substrate holder 22 at the discharge port is transported to the inlet of the reciprocating conveying mechanism 10 via the mobile platform. Then, the substrate holder 22 enters the material conveying platform 13 on the reciprocating conveying mechanism 10 and is transported to the discharge port of the reciprocating conveying mechanism 10 via the reciprocating conveying mechanism 10. The substrate holder 22 is then transported to the material conveying platform 13 on the mobile platform 11, and one coating process is completed.

[0065] 7. Load the substrate onto the substrate holder 22 on the material conveying platform 13 on the mobile platform 11, and perform PVK film coating again through the above steps.

[0066] The above embodiments are merely preferred embodiments of the present invention and should not be construed as limiting the scope of protection of the present invention. Any non-substantial changes and substitutions made by those skilled in the art based on the present invention shall fall within the scope of protection claimed by the present invention.

Claims

1. A sputtering apparatus for low-damage coating of perovskite solar cells, used in sputtering equipment for sputtering coating of substrates, characterized in that, Includes a target holder having an opening, and the substrate is located outside the target holder and can be disposed directly opposite the opening; The target holder is provided with two sputtering cathodes, which are inclined toward the opening and symmetrically arranged. The two sputtering cathodes have targets on their adjacent sidewalls for generating target atoms; Each of the sputtering cathodes has a plane perpendicular to the target material, and the included angle between the two planes is set as A, where A is an obtuse angle and the value of A ranges from 120° to 150°. An auxiliary anode is provided on the inner sidewall of the target holder away from the substrate. Two auxiliary anodes are provided, and the two auxiliary anodes are symmetrically arranged about the plane of symmetry of the two sputtering cathodes. Each of the two auxiliary anodes has a free part and a fixed part. The included angle between the free parts of the two auxiliary anodes is B, and the value of B is in the range of 20°-40°. The target holder has auxiliary cathodes on both sides, and the auxiliary cathodes include a mounting part and an adsorption part. The mounting portion is perpendicular to the substrate, and the adsorption portion is connected to the end of the mounting portion near the substrate; The adsorption section is located below the sputtering cathode, and the two adjacent ends of the adsorption section are spaced apart to form an opening.

2. The sputtering apparatus according to claim 1, characterized in that, The projection of the opening onto the substrate is a first projection, and the length of the first projection is L1 along the length direction of the substrate; The central axes of the two sputtering cathodes form two first projection lines on the substrate, and the distance between the two first projection lines is L2 along the length of the substrate. The central axes of the two targets form two second projection lines on the substrate, and the distance between the two second projection lines is L3 along the length of the substrate; And the L3 <L1<L2。 3. The sputtering apparatus according to claim 1, characterized in that, The adsorption part is arranged horizontally or at an angle, and the end of the adsorption part that connects to the mounting part is further away from the substrate than the end of the adsorption part that is further away from the mounting part.

4. A sputtering apparatus, characterized in that, Includes the sputtering apparatus according to any one of claims 1-3.

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