Solar cell module and preparation method thereof, electric equipment and power generation equipment

Abstract

The invention discloses a solar cell module, a preparation method, electric equipment and power generation equipment, the solar cell module comprises a hole transport layer, a light absorption layer and a passivation layer, the hole transport layer comprises a first hole transport layer and a second hole transport layer, and the second hole transport layer is provided with a plurality of pores; the surface, close to the second hole transport layer, of the passivation layer is at least partially embedded in the pores of the second hole transport layer, and the surface, away from the second hole transport layer, of the passivation layer is uneven. According to the embodiment of the invention, good hole transport efficiency is provided through the first hole transport layer; the contact area between the second hole transport layer and the light absorption layer is increased through the second hole transport layer with a plurality of pores, and the hole extraction rate is improved; the hole transmission efficiency is improved through the passivation layer; the hole transport layer and the passivation layer are cooperatively used, so that the device performance of the corresponding solar cell module is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of photovoltaic devices, in particular to a solar cell module, a preparation method thereof, an electricity-using device and a power generation device. BACKGROUND

[0002] The part provided in this part is only background information related to the present application, which is not necessarily prior art.

[0003] As a highly potential photovoltaic device, solar cells are widely studied, wherein the light absorption material of the light absorption layer is prone to decomposition under the influence of the forming material of the carrier transport layer, thereby affecting the photoelectric conversion efficiency of the solar cell. SUMMARY

[0004] In view of the technical problems in the background art, the present application provides a solar cell module, a preparation method thereof, an electricity-using device and a power generation device, aiming to improve the photoelectric conversion efficiency of the solar cell module.

[0005] To achieve the above-mentioned purpose, the first aspect of the present application provides a solar cell module, comprising:

[0006] a hole transport layer, comprising a first hole transport layer and a second hole transport layer, the second hole transport layer being located on one side of the first hole transport layer;

[0007] a light absorption layer, provided on the side of the second hole transport layer away from the first hole transport layer;

[0008] a passivation layer, provided between the second hole transport layer and the light absorption layer; the passivation layer comprises a passivation material;

[0009] wherein the second hole transport layer has a plurality of pores; the surface of the passivation layer close to the second hole transport layer is at least partially embedded in the pores of the second hole transport layer, and the surface of the passivation layer away from the second hole transport layer is uneven.

[0010] The embodiments of the present application provide good hole transport efficiency through the first hole transport layer; improve the contact area with the light absorption layer through the second hole transport layer with a plurality of pores, and improve the hole extraction rate; improve the hole transport efficiency through the passivation layer; the combination of the hole transport layer and the passivation layer improves the device performance of the corresponding solar cell module. Further, the second hole transport layer with a plurality of pores as a skeleton material, when the ambient temperature of the solar cell module increases, the passivation material is limited in the skeleton material, which is conducive to improving the uniformity of the distribution of the passivation material and improving the device performance of the solar cell module. In addition, the setting of the passivation layer is conducive to improving the affinity with the light absorption layer, improving the spreading effect of the light absorption material and improving the device performance of the solar cell module.

[0011] In some embodiments, the average pore size of the pores is 10-100 nm, and / or the average particle size Dv50 of the hole transport material forming the second hole transport layer is 20-150 nm.

[0012] Embodiments of the present application regulate the hole transport efficiency and the hole extraction efficiency of the hole transport layer by regulating the average pore size of the pores and / or the average particle size Dv50 of the hole transport material forming the second hole transport layer, thereby improving the device performance of the solar cell module.

[0013] In some embodiments, the hole transport material forming the second hole transport layer is a porous material.

[0014] Embodiments of the present application form the second hole transport layer by using a raw material comprising a porous hole transport material, and in-situ generate a plurality of pores in the forming process of the second hole transport layer by using the structural properties of the raw material itself, thereby reducing the preparation difficulty and making the distribution of the generated pores more uniform in the film layer.

[0015] In some embodiments, the surface of the second hole transport layer away from the first hole transport layer has a microstructure.

[0016] Embodiments of the present application further improve the area of the surface of the second hole transport layer away from the first hole transport layer contacting the light absorbing layer by providing the microstructure, thereby improving the hole extraction efficiency.

[0017] In some embodiments, the microstructure comprises one or more of grooves, protrusions, and pores.

[0018] Embodiments of the present application improve the area of the surface of the second hole transport layer away from the first hole transport layer contacting the light absorbing layer by regulating the microstructure, thereby improving the hole extraction efficiency.

[0019] In some embodiments, the thickness ratio of the second hole transport layer to the first hole transport layer comprises 1:0.1-10.

[0020] Embodiments of the present application regulate the hole extraction efficiency and the hole transport efficiency of the hole transport layer by regulating the thickness ratio of the first hole transport layer to the second hole transport layer, thereby improving the device performance of the corresponding solar cell module.

[0021] In some embodiments, the thickness of the first hole transport layer comprises 10-50 nm, and / or the thickness of the second hole transport layer comprises 3-100 nm.

[0022] Embodiments of the present application regulate the hole extraction efficiency and the hole transport efficiency of the hole transport layer by providing specific thickness ranges of the first hole transport layer and the second hole transport layer, thereby improving the device performance of the corresponding solar cell module.

[0023] In some embodiments, the light-absorbing layer comprises a perovskite material, the first hole transport layer comprises a first hole transport material, the second hole transport layer comprises a second hole transport material, and the first hole transport material and the second hole transport material are the same or different.

[0024] Embodiments of the present application achieve the improvement of the photoelectric conversion efficiency of the corresponding solar cell module by providing the design of the perovskite material of the light-absorbing layer and the hole transport material of the first hole transport layer and the second hole transport layer.

[0025] In some embodiments, the hole transport material forming the second hole transport layer is independently selected from one or more of the following materials and derivatives thereof and materials obtained by doping or passivation thereof: nickel oxide, copper oxide, cuprous iodide, cuprous thiocyanate, copper-iron oxide, spinel structure oxide;

[0026] And / or, the passivation material forming the passivation layer is independently selected from one or more of the following materials and derivatives thereof: spiro compound monomer, triphenylamine compound monomer, heteroanthracene and heterofluorene compound monomer, carbazole compound monomer, triphenylamine polymer, conjugated polymer based on electron donor unit, side chain conjugated polymer, main chain and side chain cross conjugated polymer, donor-acceptor conjugated polymer.

[0027] Embodiments of the present application adjust the performance of the corresponding composite film layer of the hole transport layer and the passivation layer by providing the hole transport material forming the hole transport layer and / or the passivation material forming the passivation layer, so as to improve the device performance of the corresponding solar cell module.

[0028] In a second aspect, embodiments of the present application provide a method for preparing a solar cell module, comprising:

[0029] providing an intermediate piece comprising a first hole transport layer;

[0030] forming a second hole transport layer on one side of the first hole transport layer, the second hole transport layer having a plurality of pores;

[0031] providing a passivation material on the side of the second hole transport layer away from the first hole transport layer to form a passivation layer, the surface of the passivation layer close to the second hole transport layer being at least partially embedded in the pores of the second hole transport layer, and the surface of the passivation layer away from the second hole transport layer being uneven;

[0032] providing a light-absorbing material forming a light-absorbing layer on the side of the passivation layer away from the second hole transport layer.

[0033] The embodiments of the present application can improve the hole extraction efficiency and the photoelectric conversion efficiency of the solar cell module by the provided preparation method of the solar cell module.

[0034] In some embodiments, the step of forming the second hole transport layer on one side of the first hole transport layer comprises:

[0035] dispersing the pre-prepared hole transport material in a solvent to form a dispersion liquid;

[0036] spinning the dispersion liquid on the surface of the first hole transport layer to form a pre-product;

[0037] solidifying the pre-product to form the second hole transport layer.

[0038] The embodiments of the present application use the pre-prepared hole transport material as raw material to form the second hole transport layer on one side of the first hole transport layer, which is conducive to reducing the formation temperature of the second hole transport layer, reducing the process complexity of forming the second hole transport layer, and also conducive to applying the second hole transport layer on a flexible substrate, thereby increasing the application range of the second hole transport layer.

[0039] In some embodiments, the hole transport material comprises mesoporous hole transport material.

[0040] The embodiments of the present application use the mesoporous hole transport material as raw material to form the second hole transport layer, so that the surface of the formed second hole transport layer away from the first hole transport layer directly forms pores without other additional operations. This method is conducive to simplifying the formation process of the second hole transport layer.

[0041] In some embodiments, the step of solidifying the pre-product to form the second hole transport layer comprises:

[0042] solidifying the pre-product to form a preliminary product;

[0043] performing etching treatment on the surface of the preliminary product away from the first hole transport layer, and forming a microstructure on the surface of the preliminary product away from the first hole transport layer.

[0044] The embodiments of the present application form a microstructure on the surface of the preliminary product away from the first hole transport layer by etching, thereby reducing the manufacturing process complexity and cost.

[0045] The third aspect of the present application provides a power consuming device comprising any of the solar cell modules provided in the first aspect, or any of the solar cell modules prepared by the preparation method provided in the second aspect. The power consuming device adopts the solar cell module provided in the present application, and has at least the same advantages as the solar cell module, so that the battery performance of the power consuming device can be improved.

[0046] The fourth aspect of the present application provides a power generating device comprising any of the solar cell modules provided in the first aspect, or any of the solar cell modules prepared by the preparation method provided in the second aspect. The power generating device adopts the solar cell module provided in the present application, and has at least the same advantages as the solar cell module, so that the power generation performance of the power generating device can be improved. BRIEF DESCRIPTION OF DRAWINGS

[0047] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative effort.

[0048] Figure 1 is a first structural schematic diagram of the solar cell module provided in the embodiments of the present application;

[0049] Figure 2 is a second structural schematic diagram of the solar cell module provided in the embodiments of the present application;

[0050] Figure 3 is a structural schematic diagram of the power consuming device provided in the embodiments of the present application;

[0051] Figure 4 is a structural schematic diagram of the power generating device provided in the embodiments of the present application.

[0052] EXPLANATION OF DRAWINGS:

[0053] 100-solar cell module, 10-hole transport layer, 20-light absorption layer, 30-passivation layer, 11-first hole transport layer, 12-second hole transport layer, 1000-power consuming device, 2000-power generating device. DETAILED DESCRIPTION

[0054] The present application will be further described in conjunction with the specific embodiments. It should be understood that these specific embodiments are only used to illustrate the present application and not to limit the scope of the present application.

[0055] For the sake of brevity, only some numerical ranges are specifically disclosed herein. However, any upper limit can be combined with any lower limit to create a range not explicitly recited; and any lower limit can be combined with any other lower limit to create a range not explicitly recited, and any upper limit can be combined with any other upper limit to create a range not explicitly recited. Further, each individual disclosed point or singular value can be combined with any other point or singular value to create a range not explicitly recited, either as a lower or upper limit, or in combination with other lower or upper limits.

[0056] In the description herein, the term "or" is inclusive, unless otherwise indicated. That is, the phrase "A or B" means "A, B, or both A and B." More specifically, any of the following are satisfied for the condition "A or B": A is true (or exists) and B is false (or does not exist); A is false (or does not exist) and B is true (or exists); or both A and B are true (or exist).

[0057] In the description herein, it is to be noted that, unless otherwise stated, "above", "below" are inclusive of the number itself, and "several" means two or more.

[0058] Unless otherwise defined, the terms used in the present application have the meanings commonly understood by those skilled in the art. Unless otherwise stated, the values of the parameters mentioned in the present application can be measured by various measurement methods commonly used in the art (for example, tests can be carried out according to the methods given in the examples of the present application).

[0059] At the interface between the light absorbing layer and the hole transporting layer in the solar cell, the light absorbing material and the hole transporting material are prone to react and cause the light absorbing material to decompose. A passivation material can be provided at the interface to slow down and / or reduce the decomposition of the light absorbing material, but the solar cell is affected by light and heat during operation, the temperature of the film layer rises, the passivation material is prone to melt and / or agglomerate under heat, resulting in uneven distribution of the passivation material at the interface, the proportion of the hole transporting material directly contacting the light absorbing material increases, the passivation effect of the passivation material is weakened, and the photoelectric conversion efficiency of the solar cell is prone to rapidly decrease.

[0060] To solve the above technical problems, the embodiments of the present application provide a solar cell module and a preparation method, an electrical equipment and a power generation equipment.

[0061] The technical solutions described in the embodiments of the present application are applicable to a solar cell module and a preparation method, an electrical equipment and a power generation equipment. The disclosed solar cell module can be used in a perovskite laminated solar cell module, and can also be used in a silicon-perovskite laminated solar cell module, which is not limited in the present application.

[0062] Please refer to Figure 1 ,Figure 1 is a first structural schematic diagram of a solar cell module provided by embodiments of the present application.

[0063] To achieve the above-mentioned purpose, referring to Figure 1 , a first aspect of the present application provides a solar cell module 100, comprising a hole transport layer 10, a light absorption layer 20 and a passivation layer 30. Wherein, the hole transport layer 10 comprises a first hole transport layer 11 and a second hole transport layer 12, and the second hole transport layer 12 is located on one side of the first hole transport layer 11. The light absorption layer 20 is arranged on the side of the second hole transport layer 12 away from the first hole transport layer 11. The passivation layer 30 is arranged between the second hole transport layer 12 and the light absorption layer 20. The passivation layer 30 comprises a passivation material. Wherein, the second hole transport layer 12 has a plurality of pores. The passivation layer 30 is at least partially embedded in the pores of the second hole transport layer 12 near the surface of the second hole transport layer 12, and the surface of the passivation layer 30 away from the second hole transport layer 12 is uneven.

[0064] Wherein, the solar cell module 100 refers to a device that directly converts light energy into electrical energy through photovoltaic effect. Generally, the solar cell module 100 includes the first generation solar cell represented by crystalline silicon solar cell, the second generation solar cell represented by thin film solar cell made of direct bandgap semiconductors such as copper indium gallium selenide (CIGS), gallium arsenide (GaAs) and cadmium telluride (CdTe), and the third generation solar cell represented by dye-sensitized solar cell (DSSCs), organic photovoltaic cell (OPVs) and perovskite solar cell (PSCs). In some embodiments, the solar cell module 100 provided by embodiments of the present application refers to perovskite solar cell which uses perovskite type semiconductor as light absorption material.

[0065] The hole transport layer 10 refers to a functional layer for transporting hole carriers, which plays a role in improving the transfer rate of hole carriers, improving the photoelectric conversion efficiency of the device and increasing the stability of the device.

[0066] In some embodiments, the hole transport layer 10 can only include the first hole transport layer 11 and the second hole transport layer 12, and the first hole transport layer 11 and the second hole transport layer 12 are arranged in layers, and the second hole transport layer 12 is directly arranged on the surface of the first hole transport layer 11. In some embodiments, in addition to including the first hole transport layer 11 and the second hole transport layer 12, the hole transport layer 10 can also include other hole transport film layer structures, and the other hole transport film layer structures can be arranged on the side of the first hole transport layer 11 away from the second hole transport layer 12, or can be arranged between the first hole transport layer 11 and the second hole transport layer 12.

[0067] In some embodiments, the hole transport material forming the first hole transport layer 11 can employ dense particles, and the hole transport material forming the second hole transport layer 12 can employ porous material. In some embodiments, some post-processing can be performed on the preliminary product of the second hole transport layer 12, for example, etching the preliminary product of the second hole transport layer 12, so that the preliminary product of the second hole transport layer 12 has a microstructure 121 away from the surface of the first hole transport layer 11.

[0068] In some embodiments, the first hole transport layer 11 and the second hole transport layer 12 have different degrees of compactness, and have a relatively obvious interface. The cross-section of the hole transport layer 10 can be scanned by a scanning electron microscope (SEM) or a field emission scanning electron microscope (FESEM), so that the first hole transport layer 11 and the second hole transport layer 12 can be observed and distinguished.

[0069] In some embodiments, the hole transport material forming the first hole transport layer 11 and the hole transport material forming the second hole transport layer 12 are different. The hole transport layer 10 can be analyzed by an energy dispersive spectrometer (EDS) or an X-ray diffractometer, so that the first hole transport layer 11 and the second hole transport layer 12 can be distinguished.

[0070] The light absorption layer 20 refers to the core component of the solar cell module 100, which is used to absorb the photon energy of sunlight, generate electron-hole pairs, and separate the electron-hole pairs into free electrons and holes under the action of the built-in electric field. The holes and the electrons are collected by two different electrodes, and the two electrodes are connected into a circuit to generate photocurrent. The light absorption material forming the light absorption layer 20 can employ the commonly used light absorption material in the art, which is not specifically limited in the art.

[0071] The passivation layer 30 is arranged between the second hole transport layer 12 and the light absorption layer 20, and is used to improve the hole transport rate. The passivation material refers to a material capable of transporting holes.

[0072] In addition to the hole transport layer 10, the light absorption layer 20 and the passivation layer 30, the solar cell module 100 can also include other film layer structures. In some embodiments, the solar cell module 100 can also include a substrate, a first electrode layer, an electron transport layer and a second electrode layer, and the hole transport layer 10, the passivation layer 30 and the light absorption layer 20 are arranged between the first electrode layer and the electron transport layer.

[0073] The pore refers to the pore on the surface of the hole transport material forming the second hole transport layer 12, or refers to the gap between the hole transport material forming the second hole transport layer 12. In some embodiments, the pore can be a disordered mesoporous structure, or an ordered mesoporous structure.

[0074] The second hole transport layer 12 has a plurality of pores. It can be understood that the plurality of pores are randomly generated in the process of forming the second hole transport layer 12. After the second hole transport layer 12 is formed, the plurality of pores are distributed on the surface and inside of the second hole transport layer 12. The plurality of pores can be of different sizes and shapes.

[0075] The plurality of pores are arranged to facilitate the increase of the area of the surface of the second hole transport layer 12 close to the light absorbing layer 20 in contact with the light absorbing layer 20.

[0076] The passivation layer 30 is at least partially embedded in the pores of the second hole transport layer 12 close to the surface of the second hole transport layer 12, and the surface of the passivation layer 30 away from the surface of the second hole transport layer 12 is uneven. It can be understood that the passivation layer 30 is directly formed on the surface of the second hole transport layer 12 close to the light absorbing layer 20 by the passivation material. Since the second hole transport layer 12 has a plurality of pores, the passivation material can be partially embedded in the plurality of pores of the second hole transport layer 12, so that the passivation layer 30 forms a undulating film structure with the rough surface of the second hole transport layer 12, and the two surfaces of the passivation layer 30 arranged oppositely are uneven. Due to the existence of the pores, the rate of hole carrier transport between the hole transport materials forming the second hole transport layer 12 is slow, so the passivation material is arranged to improve the hole transport rate.

[0077] The embodiments of the present application provide good hole transport efficiency through the first hole transport layer 11, improve the contact area with the light absorbing layer 20 through the second hole transport layer 12 having a plurality of pores, improve the hole extraction rate, improve the hole transport efficiency through the passivation layer 30, and improve the device performance of the corresponding solar cell assembly 100 through the cooperation of the hole transport layer 10 and the passivation layer 30. Further, the second hole transport layer 12 having a plurality of pores serves as a skeleton material. When the ambient temperature of the solar cell assembly 100 increases, the passivation material is limited in the skeleton material, which is conducive to improving the uniformity of the distribution of the passivation material and improving the device performance of the solar cell assembly 100. In addition, the arrangement of the passivation layer 30 is conducive to improving the affinity with the light absorbing layer 20, improving the spreading effect of the light absorbing material, and improving the device performance of the solar cell assembly 100.

[0078] In some embodiments, the average pore size of the pores is 10 nm to 100 nm. In some embodiments, the average pore size of the pores can be 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, 95 nm, 100 nm, or a range between any two of the foregoing values. For example, the average pore size can be 10 nm to 30 nm, 20 nm to 40 nm, 30 nm to 50 nm, 40 nm to 60 nm, 50 nm to 70 nm, 60 nm to 80 nm, 70 nm to 90 nm, 80 nm to 100 nm, etc.

[0079] In some embodiments, the average pore size of the pores is 10 nm to 100 nm. In some embodiments, the average pore size of the pores can be 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, 95 nm, 100 nm, or a range between any two of the foregoing values. For example, the average pore size can be 10 nm to 30 nm, 20 nm to 40 nm, 30 nm to 50 nm, 40 nm to 60 nm, 50 nm to 70 nm, 60 nm to 80 nm, 70 nm to 90 nm, 80 nm to 100 nm, etc.

[0080] In some embodiments, the average particle size Dv50 of the hole transport material forming the second hole transport layer 12 is 20 nm to 150 nm. In some embodiments, the average particle size Dv50 of the hole transport material forming the second hole transport layer 12 can be 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, 95 nm, 100 nm, 105 nm, 110 nm, 115 nm, 120 nm, 125 nm, 130 nm, 135 nm, 140 nm, 145 nm, 150 nm, or a range between any two of the foregoing values. For example, the average particle size Dv50 can be 20 nm to 40 nm, 30 nm to 50 nm, 40 nm to 60 nm, 50 nm to 70 nm, 60 nm to 80 nm, 70 nm to 90 nm, 80 nm to 100 nm, 90 nm to 110 nm, 100 nm to 120 nm, 110 nm to 130 nm, 120 nm to 140 nm, 130 nm to 150 nm, etc.

[0081] The average particle size Dv50 of the hole transport material forming the second hole transport layer 12 can be measured by methods and instruments known in the art. For example, the average particle size Dv50 can be measured by a laser particle size analyzer (e.g., Malvern MasterSize 3000) according to GB / T 19077-2016.

[0082] Embodiments of the present application regulate the hole transport efficiency and the hole extraction efficiency of the hole transport layer 10 by regulating the average pore size of the pores and / or the average particle size Dv50 of the hole transport material forming the second hole transport layer 12, thereby improving the device performance of the solar cell module 100.

[0083] In some embodiments, the hole transport material forming the second hole transport layer 12 includes a porous hole transport material.

[0084] In some embodiments, the hole transport material forming the second hole transport layer 12 includes a porous hole transport material.

[0085] Embodiments of the present application form the second hole transport layer 12 by using a raw material including a porous hole transport material, and generate a plurality of pores in situ during the formation of the second hole transport layer 12 by using the structural properties of the raw material itself, thereby reducing the preparation difficulty and making the distribution of the generated pores more uniform.

[0086] Please refer to Figure 2 , Figure 2 is a second structural schematic diagram of a solar cell module provided by embodiments of the present application.

[0087] In some embodiments, referring to Figure 2 , the surface of the second hole transport layer 12 away from the first hole transport layer 11 has a microstructure.

[0088] In some embodiments, the microstructure can be observed by a scanning electron microscope (SEM) or a transmission electron microscope (TEM). In some embodiments, the microstructure can be distributed in an ordered manner or in a random manner, and the morphology of the microstructure can be pre-set or randomly formed.

[0089] Embodiments of the present application further improve the area of the surface of the second hole transport layer 12 away from the first hole transport layer 11 contacting the light absorbing layer 20 by setting the microstructure, thereby improving the hole extraction efficiency.

[0090] In some embodiments, the microstructure includes one or more of a groove, a protrusion, and a pore.

[0091] Embodiments of the present application improve the area of the surface of the second hole transport layer 12 away from the first hole transport layer 11 contacting the light absorbing layer 20 by regulating the microstructure, thereby improving the hole extraction efficiency.

[0092] In some embodiments, the thickness ratio of the first hole transport layer 11 and the second hole transport layer 12 includes 1:0.1-10. In some embodiments, the thickness ratio of the first hole transport layer 11 and the second hole transport layer 12 can be 1:0.1, 1:0.15, 1:0.5, 1:1, 1:1.2, 1:1.5, 1:1.8, 1:2, 1:2.1, 1:2.2, 1:2.5, 1:2.8, 1:3, 1:3.2, 1:3.5, 1:3.8, 1:4, 1:4.2, 1:4.5, 1:4.8, 1:5, 1:5.1, 1:5.2, 1:5.5, 1:5.8, 1:6, 1:6.1, 1:6.2, 1:6.5, 1:6.8, 1:7, 1:7.1, 1:7.2, 1:7.5, 1:7.8, 1:8, 1:8.1, 1:8.2, 1:8.5, 1:8.8, 1:9, 1:9.1, 1:9.2, 1:9.5, 1:9.8, 1:10, or a range between any two of the above values. For example, it can be 1:0.1-1, 1:1-3, 1:1.5-3, 1:2-4, 1:3-5, 1:4-6, 1:5-7, 1:6-8, 1:7-9, 1:8-10, etc.

[0093] Embodiments of the present application control the hole extraction efficiency and the hole transport efficiency of the hole transport layer 10 by controlling the thickness ratio of the first hole transport layer 11 and the second hole transport layer 12, so as to improve the device performance of the corresponding solar cell module 100.

[0094] In some embodiments, the thickness of the first hole transport layer 11 includes 10-50 nm. In some embodiments, the thickness of the first hole transport layer 11 can be 10 nm, 12 nm, 14 nm, 16 nm, 18 nm, 20 nm, 22 nm, 24 nm, 26 nm, 28 nm, 30 nm, 32 nm, 34 nm, 36 nm, 38 nm, 40 nm, 42 nm, 44 nm, 46 nm, 48 nm, 50 nm, or a range between any two of the above values. For example, it can be 10-20 nm, 14-34 nm, 30-40 nm, 36-46 nm, 40-50 nm, etc.

[0095] In some embodiments, the thickness of the second hole transport layer 12 includes 3 nm to 100 nm. In some embodiments, the thickness of the second hole transport layer 12 can be 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, 21 nm, 22 nm, 23 nm, 24 nm, 25 nm, 26 nm, 27 nm, 28 nm, 29 nm, 30 nm, 31 nm, 32 nm, 33 nm, 34 nm, 35 nm, 36 nm, 37 nm, 38 nm, 39 nm, 40 nm, 41 nm, 42 nm, 43 nm, 44 nm, 45 nm, 46 nm, 47 nm, 48 nm, 49 nm, 50 nm, 52 nm, 55 nm, 58 nm, 60 nm, 62 nm, 65 nm, 68 nm, 70 nm, 72 nm, 75 nm, 78 nm, 80 nm, 82 nm, 85 nm, 88 nm, 90 nm, 92 nm, 95 nm, 98 nm, 100 nm, or a range between any two of the above values. For example, it can be 3 nm to 10 nm, 8 nm to 15 nm, 12 nm to 20 nm, 18 nm to 25 nm, 22 nm to 30 nm, 28 nm to 35 nm, 30 nm to 40 nm, 35 nm to 45 nm, 40 nm to 50 nm, 45 nm to 55 nm, 50 nm to 60 nm, 55 nm to 65 nm, 60 nm to 70 nm, 65 nm to 75 nm, 70 nm to 80 nm, 75 nm to 85 nm, 80 nm to 90 nm, 85 nm to 95 nm, 90 nm to 100 nm, etc.

[0096] Embodiments of the present application can regulate the hole extraction efficiency and the hole transport efficiency of the hole transport layer 10 by providing specific thickness ranges of the first hole transport layer 11 and the second hole transport layer 12, so as to improve the device performance of the corresponding solar cell module 100.

[0097] In some embodiments, the light absorption layer 20 includes a perovskite material, the first hole transport layer 11 includes a first hole transport material, the second hole transport layer 12 includes a second hole transport material, and the first hole transport material and the second hole transport material can be the same to reduce the preparation process and the preparation cost. In some embodiments, the first hole transport material and the second hole transport material can be different to flexibly regulate the performance of the formed hole transport layer 10. The composition of the hole transport layer 10 can be analyzed by an energy dispersive spectrometer (EDS) or an X-ray diffractometer, etc. to distinguish the first hole transport layer 11 and the second hole transport layer 12.

[0098] The molecular formula of the perovskite material of the light absorbing layer 20 includes ABX3or A2CDX6, wherein A is one or more of inorganic, organic or hybrid organic-inorganic cations, in some embodiments, A includes one or more of methylamine cation MA + , formamidinium cation FA + , cesium cation Cs + ; B is one or more of inorganic, organic or hybrid organic-inorganic cations, in some embodiments, B includes one or more of lead cation Pb 2+ , tin cation Sn 2+ ; C is one or more of inorganic, organic or hybrid organic-inorganic cations, in some embodiments, C includes silver cation Ag + ; D is one or more of inorganic, organic or hybrid organic-inorganic cations, in some embodiments, D includes one or more of bismuth cation Bi 3+ , antimony cation Sb 3+ , indium cation In 3+ ; X is one or more of inorganic, organic or hybrid organic-inorganic anions, in some embodiments, X includes one or more of fluoride anion F - , chloride anion Cl - , bromide anion Br - , iodide anion I - .

[0099] Embodiments of the present application achieve the improvement of the photoelectric conversion efficiency of the corresponding solar cell module 100 by providing the design of the perovskite material of the light absorbing layer 20 and the hole transporting material of the first hole transporting layer 11 and the second hole transporting layer 12.

[0100] In some embodiments, the hole transporting material forming the second hole transporting layer 12 is independently selected from one or more of the following materials and derivatives thereof and materials obtained by doping or passivating thereof: nickel oxide (NiO x ), copper oxide (CuO x ), cuprous iodide (Cul), cuprous thiocyanate (CuSCN), copper-iron oxide (ABO2, such as CuAlO2, CuGaO2, CuCrO2and CuFeO2), spinel structure oxide ((AB2O4, such as NiCo2O4and CuCo2O4).

[0101] In some embodiments, the hole-transporting material forming the first hole-transporting layer 11 is independently selected from one or more of the following materials and derivatives thereof and materials resulting from doping or passivation thereof: 2,2',7,7'-tetrakis(N,N-p-methoxyphenylamino)-9,9'-spirobifluorene, methoxytriphenylamine-fluoromethylcarbamide, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(3,4-ethylenedioxythiophene):polystyrene sulfonic acid, poly-3-hexylthiophene, triptycene-core triphenylamine, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-anilino)carbazole-spirobifluorene, polythiophene, phosphonic monomer, carbazolyl monomer, sulfonic monomer, triphenylamine monomer, aromatic monomer, metal oxide, and cuprous thiocyanate, wherein the metal element in the metal oxide can include one or more of Ni, Mo, and Cu.

[0102] In some embodiments, the passivation material forming the passivation layer is independently selected from one or more of the following materials and derivatives thereof: spiro compound monomer (e.g., 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, Spiro-OMeTAD), triphenylamine compound monomer {e.g., [4-(diphenylamino)phenyl)ethyl]phosphonic acid}, heteroanthracene and heterofluorene compound monomer, carbazole compound monomer (e.g., carbazole phosphonic acid), triphenylamine polymer, conjugated polymer based on electron-donating units (e.g., polythiophene and derivatives thereof), side-chain conjugated polymer, main-chain and side-chain cross conjugated polymer, donor-acceptor (D-A) conjugated polymer [consisting of alternating connection of electron-donating units and electron-deficient units, wherein the commonly used electron-donating units include thiophene, benzo[1,2-b:4,5-b' dithiophene (BDT), fluorene, cyclopentadiene dithiophene, etc., and the commonly used electron-deficient units include 2,1,3-benzothiadiazole (BT), pyrrolopyrrolidone, 1,3-bithiophene-5,7-bis(diethylhexyl)benzo[1,2-c:4,5-c']dithiophene-4,8-dione (BDD)].

[0103] In some embodiments, the passivation material provided by the embodiments of the present application can include one or more of the following structural formula (1) to structural formula (13):

[0104]

[0105]

[0106]

[0107] Embodiments of the present application provide a hole transport material for forming a hole transport layer 10 and / or a passivation material for forming a passivation layer 30, which can regulate the performance of the composite film layer of the corresponding hole transport layer 10 and passivation layer 30, so as to improve the device performance of the corresponding solar cell module 100.

[0108] A second aspect of the present application provides a method for manufacturing a solar cell module 100, comprising:

[0109] S10, providing an intermediate piece comprising a first hole transport layer 11.

[0110] The method for forming the first hole transport layer 11 can include, but is not limited to, the following schemes:

[0111] (1) The precursor solution of the hole transport material for forming the first hole transport layer 11 is spin-coated on the substrate, and then the formed pre-product is subjected to heat treatment. The solute component of the precursor solution of the hole transport material for forming the first hole transport layer 11 can be a combined salt substance of the hole transport material of the formed first hole transport layer 11. For example, if the hole transport material of the formed first hole transport layer 11 is nickel oxide, the solute component of the precursor solution of the hole transport material for forming the first hole transport layer 11 can be a combined salt substance of nickel oxide such as nickel nitrate or nickel chloride. The processing temperature and processing time of the heat treatment are selected to form a stable hole transport material of the first hole transport layer 11.

[0112] (2) The dispersion liquid of the nanoscale hole transport material for forming the first hole transport layer 11 is spin-coated on the substrate, and then the formed pre-product is subjected to annealing treatment.

[0113] Since the nanoscale hole transport material for forming the first hole transport layer 11 has been obtained in advance, the temperature required in the process of spin-coating the dispersion liquid on the substrate to form the first hole transport layer 11 is relatively low, which is conducive to the application of the hole transport layer 10 provided by the present application on a flexible substrate and reduces the complexity of the manufacturing process.

[0114] S20, forming a second hole transport layer 12 on one side of the first hole transport layer 11, and the second hole transport layer 12 has a plurality of pores.

[0115] Before forming the second hole transport layer 12 on one side of the first hole transport layer 11, the intermediate piece formed in S10 can also include a step of solidification treatment. In some embodiments, the solidification treatment can be annealing treatment.

[0116] S30, disposing a passivation material on a side of the second hole transport layer 12 away from the first hole transport layer 11 to form a passivation layer 30, the surface of the passivation layer 30 close to the second hole transport layer 12 being at least partially embedded in the pores of the second hole transport layer 12, and the surface of the passivation layer 30 away from the second hole transport layer 12 being uneven.

[0117] S40, disposing the perovskite material forming the light absorption layer 20 on a side of the passivation layer 30 away from the second hole transport layer 12.

[0118] The method for forming the light absorption layer 20 can adopt a commonly used forming method in the art, and the light absorption layer 20 can be formed on the side of the passivation layer 30 away from the second hole transport layer 12, which is not limited in the present application. For example, the spin coating method can be used to form the light absorption layer 20, specifically, the precursor solution of the perovskite material forming the light absorption layer 20 is spin coated on the side of the passivation layer 30 away from the second hole transport layer 12, and then heat treatment is performed. The heat treatment used can be annealing treatment.

[0119] The composite film layer of the hole transport layer 10 and the passivation layer 30 formed by the preparation method of the solar cell module 100 provided by the embodiments of the present application can improve the hole extraction efficiency while maintaining a certain hole transport efficiency, which is beneficial to improve the photoelectric conversion efficiency of the corresponding solar cell module 100.

[0120] In some embodiments, the step of forming the second hole transport layer 12 on a side of the first hole transport layer 11 in S20 includes:

[0121] S21, dispersing the pre-prepared hole transport material in a solvent to form a dispersion liquid.

[0122] In some embodiments, the pre-prepared hole transport material can be nanoscale, and the solvent can be water or an organic solvent. Since the hole transport material is pre-prepared as a nanoscale material, the temperature required for subsequent solidification treatment (step S23) is lower, which is beneficial to reduce the complexity of the manufacturing process, and further, is beneficial to the application of the second hole transport layer 12 on a flexible substrate, and expands the application range of the second hole transport layer 12.

[0123] The concentration of the pre-prepared hole transport material in the dispersion liquid can be adjusted to adjust the film performance of the second hole transport layer 12 formed, so as to adjust the hole extraction efficiency and hole transport efficiency of the hole transport layer 10 formed.

[0124] S22, spin coating the dispersion liquid on the surface of the first hole transport layer 11 to form a pre-product.

[0125] The spin coating is a method of forming the perovskite film in a liquid phase. In some embodiments, the dispersion liquid is added on the first hole transport layer 11, and then is rotated at a certain speed to form a film on the dispersion liquid added on the first hole transport layer 11.

[0126] The pre-product refers to a film structure formed by the dispersion liquid after the spin coating. In some embodiments, the pre-product is a wet film, that is, some solvent of the dispersion liquid still exists in the pre-product.

[0127] S23, performing a curing treatment on the pre-product to form the second hole transport layer 12.

[0128] The curing treatment refers to a process of forming a film of the pre-product. In some embodiments, the curing treatment can be an annealing treatment, which refers to a process of heating the pre-product to a certain temperature and maintaining for a period of time. In other embodiments, the curing treatment can also be a chemical treatment, which can be a treatment of the film layer by using a chemical reagent. In other embodiments, the curing treatment can also be a treatment of the film layer by using light, which can be infrared, ultraviolet, etc. In other embodiments, the curing treatment can also be a treatment of the film layer by using microwave.

[0129] Embodiments of the present application use the pre-prepared hole transport material as a raw material to form the second hole transport layer 12 on one side of the first hole transport layer 11, which is beneficial to reduce the formation temperature of the second hole transport layer 12, reduce the process complexity of forming the second hole transport layer 12, and also beneficial to the application of the second hole transport layer 12 on the flexible substrate, and increase the application range of the second hole transport layer 12.

[0130] In some embodiments, in S21, the hole transport material includes a mesoporous hole transport material, and the second hole transport layer 12 has a microstructure 121 away from the surface of the first hole transport layer 11, and the microstructure 121 includes pores.

[0131] The mesoporous hole transport material refers to a hole transport material with a porous structure, and the pore size of the porous structure is in the range of 2nm-50nm.

[0132] Embodiments of the present application use the mesoporous hole transport material as a raw material to form the second hole transport layer 12, so that the surface of the formed second hole transport layer 12 away from the first hole transport layer 11 directly forms pores without other additional operations, which is beneficial to simplify the formation process of the second hole transport layer 12.

[0133] In some embodiments, in S23, the step of performing a curing treatment on the pre-product to form the second hole transport layer 12 includes:

[0134] S231, performing a curing treatment on the pre-product to form a preliminary product;

[0135] S232, etching is performed on the surface of the primary product away from the first hole transport layer 11, and a microstructure is formed on the surface of the primary product away from the first hole transport layer 11.

[0136] In some embodiments, the etching is chemical etching. For example, a processing solution containing an etchant is used to etch the primary product, which is advantageous in reducing the complexity and cost of the manufacturing process.

[0137] It should be noted that other methods can also be used to form a microstructure on the surface of the primary product away from the first hole transport layer 11. For example, a template method can be used to form a microstructure on the surface of the primary product away from the first hole transport layer 11. Specifically, a template having a predetermined pattern of protrusions on the surface is pressed onto the primary product with a certain pressure, and then heat treatment is performed to form a microstructure on the surface of the primary product away from the first hole transport layer 11, which cooperates with the protrusions on the template. The predetermined pattern of protrusions on the template can be designed according to the requirements of the microstructure.

[0138] The embodiments of the present application form a microstructure on the surface of the primary product away from the first hole transport layer 11 by etching, which reduces the complexity and cost of the manufacturing process.

[0139] Please refer to Figure 3 , Figure 3 is a structural schematic diagram of a power-using device provided by an embodiment of the present application.

[0140] The third aspect of the present application provides a power-using device 1000, which refers to Figure 3 any solar cell assembly 100 provided by the first aspect, or a solar cell assembly 100 prepared by the preparation method of any solar cell assembly 100 provided by the second aspect.

[0141] In the embodiments of the present application, the solar cell assembly 100 serves as the power source of the power-using device 1000, and realizes the normal operation of the power-using device 1000. The power-using device 1000 uses the solar cell assembly 100 provided by the present application, and at least has the same advantages as the solar cell assembly 100, which can improve the battery performance of the power-using device 1000. As an example, the power-using device 1000 can include lighting devices, display devices, or new energy vehicles, etc.

[0142] Please refer to Figure 4 , Figure 4 is a structural schematic diagram of a power generation device provided by an embodiment of the present application.

[0143] The fourth aspect of the present application provides a power generation device 2000, which refers to Figure 4, including any solar cell module 100 provided in the first aspect, or any solar cell module 100 prepared by the preparation method of the solar cell module 100 provided in the second aspect.

[0144] In the embodiments of the present application, the solar cell module 100 serves as an energy source of the power generation device 2000, and realizes the power output of the power generation device 2000. The power generation device 2000 adopts the solar cell module 100 provided in the present application, and at least has the same advantages as the solar cell module 100, so as to improve the power generation performance of the power generation device 2000. As an example, the power generation device 2000 can be applied to the fields of building electricity, wearable device electricity, smart phone electricity, vehicle-mounted battery electricity, etc.

[0145] The beneficial effects of the present application will be further illustrated in conjunction with the embodiments below.

[0146] In order to make the technical problems, technical solutions and beneficial effects solved by the embodiments of the present application more clear, the following will be further described in detail in conjunction with the embodiments and the drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, not all. The description of the at least one exemplary embodiment below is actually only illustrative, but not as any limitation on the present application and its application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0147] Embodiment 1

[0148] Preparation of the solar cell module 100:

[0149] (1) Take FTO (fluorine-doped tin dioxide) conductive glass with a size of 2.0 cm x 2.0 cm, and remove 0.35 cm of FTO from both ends of the conductive glass by laser etching to expose the glass substrate.

[0150] (2) Ultrasonic clean the etched FTO conductive glass with soap water, deionized water and ethanol in sequence, repeat the above operation three times, blow the cleaned FTO conductive glass dry with nitrogen gun, and then put the dried FTO conductive glass into the ultraviolet ozone machine for further cleaning.

[0151] (3) Spin-coat the water dispersion of nickel oxide nanoparticles with a concentration of 10 mg / mL on the FTO conductive glass after ultraviolet ozone treatment at a speed of 4000 rpm, the average particle size Dv50 of the nickel oxide nanoparticles is 10 nm, spin-coat for 15 s, and anneal on a 100℃ hot stage for 30 minutes to obtain a first hole transport layer 11 with a thickness of 20 nm.

[0152] (4) Mesoporous nickel oxide particles with an average pore diameter of 45 nm and an average particle size Dv50 of 90 nm were added to an aqueous solution, magnetically stirred at a rate of 900 rpm for 30 min, and then ultrasonically dispersed at a frequency of 100 Hz for 10 min to obtain a water dispersion of mesoporous nickel oxide at a concentration of 30 mg / mL. The water dispersion of mesoporous nickel oxide was spin-coated onto the first hole transport layer 11 at a rate of 5000 rpm for 20 s, and then annealed at 100°C for 30 min to obtain a second hole transport layer 12 having a thickness of 20 nm.

[0153] (5) A 1 mg / mL solution of carbazole phosphonic acid in ethanol was prepared and filtered with a 0.22 μm filter to obtain a passivation solution. The passivation solution was spin-coated onto the second hole transport layer 12 formed in step (4) at a rate of 3000 rpm for 20 s, and then annealed at 100°C for 10 min to form a passivation layer 30.

[0154] (6) 690 mg of lead iodide, 170 mg of iodomethylformamidine, 23 mg of cesium iodide, 27 mg of bromomethylamine, and 26 mg of bromomethylformamidine were weighed out and dissolved in a mixed solvent of 800 μL of N,N-dimethylformamide (DMF) and 200 μL of dimethyl sulfoxide (DMSO) and stirred for 3 h, filtered with a 0.22 μm organic filter, and prepared to form a perovskite precursor solution. The perovskite precursor solution prepared in (5) was spin-coated onto the product obtained in (5) at a rate of 5000 rpm for 20 s, and a drop of antisolvent diethyl ether was added at the 10th second from the start of the spin coating, and annealed at 100°C for 30 min and cooled to room temperature to obtain a light absorbing layer 20 having a thickness of 500 nm. The chemical formula of the light absorbing material of the light absorbing layer 20 formed was Cs 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.9 Br 0.1 )3.

[0155] (7) Methylamine butyrate was dissolved in isopropyl alcohol at a mass-volume ratio of 1 mg: 1 mL, filtered with a 0.22 μm organic filter to obtain a methylamine butyrate isopropyl alcohol solution, and the methylamine butyrate isopropyl alcohol solution was spin-coated onto the light absorbing layer 20 at a rate of 3000 rpm for 30 s, and annealed at 100°C for 1 min to obtain a second passivation layer having a thickness of 1 nm.

[0156] (8) spin-coat a chlorobenzene solution of fullerene derivative PCBM with a concentration of 20 mg / mL on the second passivation layer at a rate of 1500 rpm for 20 s, anneal at 100°C for 10 min, after cooling to room temperature, spin-coat a solution of bathocuproin BCP in isopropyl alcohol with a concentration of 0.5 mg / mL at a rate of 5000 rpm to form an electron transport layer with a thickness of 60 nm and an interlayer (BCP) with a thickness of 3 nm.

[0157] Examples 2-4 are similar to Example 1, except that the average pore size and average particle size Dv50 of the mesoporous nickel oxide in step (4) of Examples 2-4 are different from Example 1. Examples 5-7 are similar to Example 1, except that the thickness of the second hole transport layer 12 in Examples 5-7 is different from Example 1.

[0158] Example 8 is similar to Example 1, except that the thickness of the passivation layer 30 formed in step (5) of Example 8 is different from Example 1.

[0159] Example 9 is similar to Example 1, except that in step (4) of Example 9, nickel oxide particles with an average particle size Dv50 of 90 nm are added to an aqueous solution, magnetically stirred at a rate of 900 rpm for 30 min, and then ultrasonically dispersed at a frequency of 100 Hz for 10 min to obtain a nickel oxide dispersion liquid with a concentration of 30 mg / mL. The nickel oxide dispersion liquid is spin-coated onto the first hole transport layer 11 at a rate of 5000 rpm for 20 s to obtain a pre-product, which is annealed at 100°C for 30 min. Then, the annealed pre-product is placed in a hydrochloric acid solution with a concentration of 0.01 mol / L and ultrasonically treated at 100 Hz for 1 min at 30°C.

[0160] Example 10 is different from Example 1, except that in step (3) of Example 10, a chlorobenzene dispersion solution of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] PTAA with a concentration of 10 mg / mL is spin-coated onto the FTO conductive glass after ultraviolet ozone treatment at a rate of 4000 rpm. Example 11 is different from Example 1, except that the passivation material in step (5) of Example 11 is [4-(diphenylamino)phenyl)ethyl]phosphonic acid instead of carbazole phosphonic acid in Example 1. Comparative Example 1 is similar to Example 1, except that step (4) in Example 1 is not performed in Comparative Example 1, and the first hole transport layer 11 with a thickness of 40 nm is formed in step (3) of Comparative Example 1.

[0161] Device performance test of the solar cell module 100:

[0162] The battery performance of the solar cell module 100 of each example and the comparative example was tested by using a Keithley 2400 SMU under a light source of 100 mW / cm2of AM 1.5G solar irradiation, to obtain the initial photoelectric conversion efficiency of the solar cell module 100. The solar cell module 100 was placed in an environment condition of 25°C and 45±5% of relative humidity, and the change of the photoelectric conversion efficiency PCE of the solar cell module 100 with the aging time was tracked, and the time required for the photoelectric conversion efficiency to decay to 80% of the initial efficiency was recorded as T80, and the size of the parameter indicates the stability of the solar cell module 100.

[0163] Table 1: Performance test results of the solar cell module of Examples 1-11 and Comparative Example 1

[0164]

[0165]

[0166] The results show that:

[0167] (1) The device performance (including the initial photoelectric conversion efficiency and T80) of the solar cell module 100 formed by each example is better than that of the device of Comparative Example 1, which indicates that the composite film layer formed by the hole transport layer 10 and the passivation layer 30 provided by the present application applied to the solar cell module 100 is beneficial to the improvement of the device performance.

[0168] (2) From the data of Examples 1-4, with the increase of the average pore size and the average particle size Dv50 of the mesoporous nickel oxide, the device performance of the corresponding solar cell module 100 presents a trend of first increasing and then decreasing, which indicates that adjusting the average pore size and / or the average particle size Dv50 of the hole transport material forming the second hole transport layer 12 is beneficial to adjusting the device performance of the corresponding solar cell module 100.

[0169] (3) From Examples 1 and 5-7, with the increase of the film thickness of the second hole transport layer 12, the initial photoelectric conversion efficiency of the corresponding solar cell module 100 presents a decreasing trend, and T80 presents an increasing trend, which indicates that adjusting the film thickness of the second hole transport layer 12 is beneficial to adjusting the device performance of the corresponding solar cell module 100.

[0170] (4) From Examples 1 and 8, with the increase of the film thickness of the passivation layer 30, the initial photoelectric conversion efficiency and T80 of the corresponding solar cell module 100 present a decreasing trend, which indicates that adjusting the film thickness of the passivation layer 30 is beneficial to adjusting the device performance of the corresponding solar cell module 100.

[0171] (5) From Example 9 and Comparative Example 1, it is seen that the hole transporting material forming the second hole transporting layer 12 can also use dense particles, and the device performance of the solar cell module 100 formed is superior to that of Comparative Example 1.

[0172] (6) From Example 1, Example 10 and Comparative Example 1, it is seen that using different hole transporting materials forming the first hole transporting layer 11 can improve the device performance of the solar cell module 100 formed.

[0173] (7) From Example 1 and Example 11, it is seen that using different passivation materials forming the passivation layer 30 can improve the device performance of the solar cell module 100 formed.

[0174] In several embodiments provided in the present application, it should be understood that the disclosed system, device and method can be implemented in other manners. For example, the above described device embodiment is merely illustrative, and for example, the division of units can be merely logical function division, and there can be another division manner in actual implementation, for example, a plurality of units or components can be combined or integrated into another system, or some features can be ignored or not executed. In addition, the displayed or discussed mutual coupling or direct coupling or communication connection can be indirect coupling or communication connection through some interface, device or unit, and can be electrical, mechanical or other forms.

[0175] In addition, each function unit in the various embodiments of the present application can be integrated into a processing unit, or each unit can exist alone physically, or two or more units can be integrated into one unit. The above integrated unit can be implemented in the form of hardware, or in the form of a software function unit.

[0176] The above description is merely an implementation of the present application, and does not limit the patent scope of the present application, and any equivalent structure or equivalent process transformation using the content of the present application specification and drawings, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A solar cell module, characterized in that: include: A hole transport layer, comprising a first hole transport layer and a second hole transport layer, wherein the second hole transport layer is located on one side of the first hole transport layer; a light absorbing layer, disposed on a side of the second hole transport layer away from the first hole transport layer; a passivation layer, disposed between the second hole transport layer and the light absorbing layer; the passivation layer comprises a passivation material; The second hole transport layer has a plurality of pores; the surface of the passivation layer close to the second hole transport layer is at least partially embedded in the pores of the second hole transport layer, and the surface of the passivation layer away from the second hole transport layer is uneven.

2. The solar cell assembly according to claim 1, wherein The average pore diameter of the pores is 10 nm to 100 nm, and / or the average particle diameter Dv50 of the hole transport material forming the second hole transport layer is 20 nm to 150 nm.

3. The solar cell assembly according to claim 1 or 2, characterized in that: The hole transport material forming the second hole transport layer is a porous material.

4. The solar cell module according to any one of claims 1 to 3, characterized in that A surface of the second hole transport layer away from the first hole transport layer has a microstructure.

5. The solar cell module according to any one of claims 1 to 4, characterized in that The microstructure includes one or more of grooves, protrusions, and pores.

6. The solar cell module according to any one of claims 1 to 5, characterized in that The thickness ratio of the second hole transport layer to the first hole transport layer is 1:0.1-10.

7. The solar cell module according to any one of claims 1 to 6, characterized in that The thickness of the first hole transport layer is comprised between 10 nm and 50 nm, and / or the thickness of the second hole transport layer is comprised between 3 nm and 100 nm.

8. The solar cell module according to any one of claims 1 to 7, characterized in that The light absorbing layer includes a perovskite material, the first hole transport layer includes a first hole transport material, and the second hole transport layer includes a second hole transport material. The first hole transport material and the second hole transport material are the same or different.

9. The solar cell module according to any one of claims 1 to 8, characterized in that The hole transport material forming the second hole transport layer is independently selected from one or more of the following materials and their derivatives and materials obtained by doping or passivation: nickel oxide, copper oxide, cuprous iodide, cuprous thiocyanate, delafossite structure oxide, spinel structure oxide; And / or, the passivation material forming the passivation layer is independently selected from one or more of the following materials and their derivatives: spirocyclic monomolecules, triphenylamine monomolecules, heteroanthracene and heterofluorene monomolecules, carbazole monomolecules, triphenylamine polymers, conjugated polymers based on electron donating units, side chain conjugated polymers, main chain side chain cross-conjugated polymers, and donor-acceptor conjugated polymers.

10. A method for preparing a solar cell module, characterized in that: include: providing an intermediate member including a first hole transport layer; forming a second hole transport layer on one side of the first hole transport layer, the second hole transport layer having a plurality of pores; Disposing a passivation material on a side of the second hole transport layer away from the first hole transport layer to form a passivation layer, wherein a surface of the passivation layer close to the second hole transport layer is at least partially embedded in the pores of the second hole transport layer, and a surface of the passivation layer away from the second hole transport layer is uneven; The light absorbing material forming the light absorbing layer is disposed on a side of the passivation layer away from the second hole transport layer.

11. The method for preparing a solar cell assembly according to claim 10, wherein: The step of forming a second hole transport layer on one side of the first hole transport layer comprises: dispersing the pre-prepared hole transport material in a solvent to form a dispersion; Spin coating the dispersion on the surface of the first hole transport layer to form a preform; The preform is cured to form a second hole transport layer.

12. The method for preparing a solar cell assembly according to claim 11, wherein: The hole transport material includes a mesoporous hole transport material.

13. The method for preparing a solar cell assembly according to claim 11, wherein: The step of curing the preform to form a second hole transport layer includes: performing a curing treatment on the preform to form a primary product; An etching process is performed on the surface of the primary product away from the first hole transport layer, so that a microstructure is formed on the surface of the primary product away from the first hole transport layer.

14. An electrical device, characterized in that: The invention comprises the solar cell module according to any one of claims 1 to 9, or a solar cell module prepared by the method for preparing a solar cell module according to any one of claims 10 to 13.

15. A power generation device, characterized in that: The invention comprises the solar cell assembly according to any one of claims 1 to 9, or a solar cell assembly prepared by the method for preparing a solar cell according to any one of claims 10 to 13.

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