High-temperature-resistant bopp capacitor film and preparation method and application thereof

Abstract

The application discloses a high-temperature-resistant BOPP (Biaxially-oriented polypropylene) capacitor film and a preparation method and application thereof, and the material for preparing the high-temperature-resistant BOPP capacitor film comprises polypropylene and an organic semiconductor master batch, wherein the organic semiconductor master batch comprises a conjugated organic semiconductor polymer and a cyclic olefin polymer; the high-temperature-resistant BOPP capacitor film is prepared by adding the conjugated organic semiconductor polymer and the cyclic olefin polymer into the polypropylene, and the high-temperature-resistant BOPP capacitor film is used for preparing a film capacitor, so that the high-temperature-resistant performance of the film capacitor can be remarkably improved.

Description

Technical Field

[0001] This invention belongs to the field of high-temperature resistant BOPP capacitor film technology, and particularly relates to a high-temperature resistant BOPP capacitor film, its preparation method and application. Background Technology

[0002] Film capacitors are an important basic electronic component, widely used in many industries such as electronics, home appliances, communications, and power.

[0003] Currently, BOPP is the most commonly used dielectric material in film capacitors. However, biaxially oriented polypropylene (BOPP) film has poor high-temperature resistance. The upper limit of the operating temperature of existing polypropylene film capacitors is approximately 105℃. When the capacitor operating temperature exceeds 85℃, most of the film's properties degrade, such as a sharp decrease in breakdown strength and a sharp increase in dielectric loss, which can easily lead to capacitor malfunctions and affect the safe and stable operation of the entire equipment system. In recent years, the development of new energy fields such as photovoltaic power generation, wind power generation, and especially new energy vehicles, has placed higher demands on film capacitors, requiring miniaturization, high temperature resistance, and large capacity.

[0004] In existing technologies, the heat resistance of polypropylene films, and consequently the heat resistance of polypropylene film capacitors, is often improved by adding cyclic olefin copolymers or inorganic particles to polypropylene. However, after adding inorganic particles to polypropylene for film preparation, the dielectric constant of the inorganic particles differs significantly from that of polypropylene. This difference can increase the local electric field, leading to a decrease in the electrical strength of the film and a substantial increase in dielectric loss, severely affecting the dielectric properties of the capacitor film. Furthermore, the poor dispersion and uneven distribution of inorganic particles in the polypropylene system further reduce the dielectric properties of the polypropylene film, impacting its usability.

[0005] While adding cyclic olefin copolymers to polypropylene does not cause physical defects in the polymer capacitor film, small amounts of cyclic olefin copolymers only slightly improve the temperature resistance of the capacitor film, offering limited improvement to the overall temperature resistance of the polypropylene film. To significantly improve the temperature resistance of the film capacitor, the amount of cyclic olefin copolymer added needs to exceed 20%, while large amounts lead to a substantial decrease in the film-forming properties. This is because cyclic olefin copolymers have poor compatibility with polypropylene, fiber stretching affects subsequent biaxial stretching, and phase separation gradually occurs during long-term use, resulting in reduced heat resistance and impacting product quality. Therefore, effectively reducing the amount of cyclic olefin copolymer added while effectively improving the film capacitor's performance is a pressing issue that needs to be addressed. Summary of the Invention

[0006] To address the shortcomings of the existing technology, a high-temperature resistant BOPP capacitor film is provided. This film is prepared by adding a conjugated organic semiconductor polymer and a cyclic olefin polymer to polypropylene. Using this high-temperature resistant BOPP capacitor film to prepare film capacitors can significantly improve the high-temperature resistance of film capacitors.

[0007] The purpose of this invention is to provide a high-temperature resistant BOPP capacitor film. The materials used to prepare the high-temperature resistant BOPP capacitor film include polypropylene and organic semiconductor masterbatch, wherein the organic semiconductor masterbatch includes conjugated organic semiconductor polymer and cyclic olefin polymer.

[0008] In some embodiments of the present invention, the amount of the organic semiconductor masterbatch, by weight percentage, is 5-15% of the high-temperature resistant BOPP capacitor film.

[0009] In some embodiments of the present invention, the amount of the conjugated organic semiconductor polymer is 0.1% to 1% of the organic semiconductor masterbatch, by mass percentage.

[0010] In some embodiments of the present invention, the cyclic olefin polymer is selected from at least one of COC, COP, and CBC.

[0011] In some embodiments of the present invention, the conjugated organic semiconductor polymer is selected from poly(3-hexylthiophene) or thiophene copolymer.

[0012] In some embodiments of the present invention, the thiophene copolymer is selected from copolymers with any of the following structures:

[0013] , ,

[0014] The number-average molecular weight ranges from 4.7 to 17.3 kDa.

[0015] In some embodiments of the present invention, the hexylthiophene segment of the thiophene copolymer accounts for 80% to 97.1% of the molar percentage of the polythiophene segment.

[0016] In some embodiments of the present invention, the isotacticity of the thiophene copolymer is ≥80%.

[0017] Another object of the present invention is to provide a method for preparing the high-temperature resistant BOPP capacitor film, comprising the following steps:

[0018] S1. The cyclic olefin polymer is pulverized into powder, the cyclic olefin polymer powder is mixed with a solvent, and heated to dissolve, thus obtaining a cyclic olefin polymer solution;

[0019] S2. Mix the conjugated organic semiconductor polymer with a solvent, heat to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0020] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add a poor solvent, precipitate, and obtain an organic semiconductor masterbatch;

[0021] S4. The organic semiconductor masterbatch is blended with polypropylene powder and melt-extruded to obtain a polypropylene composite material;

[0022] S5. The polypropylene composite material is processed into a plastic melt, extruded and cast, and biaxially stretched to obtain a high-temperature resistant BOPP capacitor film.

[0023] In some embodiments of the present invention, in S1, the solvent is selected from toluene.

[0024] In some embodiments of the present invention, in S1, the heating temperature is 120~160°C.

[0025] In some embodiments of the present invention, in S2, the solvent is selected from toluene.

[0026] In some embodiments of the present invention, in S2, the heating temperature is 120~160°C.

[0027] In some embodiments of the present invention, in S3, the undesirable solvent is selected from at least one of methanol and ethanol.

[0028] In some embodiments of the present invention, in S3, the volume ratio of the homogeneous solution to the poor solvent is 1:100~500.

[0029] In some embodiments of the present invention, in S4, the temperature of the melt extrusion is 180-230°C.

[0030] In some embodiments of the present invention, in S5,

[0031] Another object of the present invention is to provide a thin film capacitor, wherein the base film of the thin film capacitor is made of the high-temperature resistant BOPP capacitor film or a high-temperature resistant BOPP capacitor film obtained by the preparation method of the high-temperature resistant BOPP capacitor film.

[0032] Compared with the prior art, the present invention has the following beneficial effects:

[0033] (1) The present invention obtains a high-temperature resistant BOPP capacitor film by adding organic semiconductor masterbatch to polypropylene. The organic semiconductor masterbatch contains conjugated organic semiconductor polymer and cyclic olefin polymer. The addition of conjugated organic semiconductor polymer effectively improves the compatibility between polypropylene and cyclic olefin polymer, and a high-temperature resistant BOPP capacitor film can be obtained. Using the high-temperature resistant BOPP capacitor film to prepare film capacitors can significantly improve the high-temperature resistance of film capacitors.

[0034] (2) The amount of cyclic olefin polymer added in the high temperature resistant BOPP capacitor film of the present invention is low. The addition of conjugated organic semiconductor polymer significantly improves the high temperature resistance of the film capacitor. Attached Figure Description

[0035] Figure 1 This is a surface morphology diagram of the high-temperature resistant BOPP capacitor film of Example 1. Detailed Implementation

[0036] To enable those skilled in the art to better understand the technical solutions of this invention, the technical solutions of this invention will be clearly and completely described below in conjunction with the embodiments of this invention. Obviously, the described embodiments are only some embodiments of this invention, and not all embodiments. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of this invention.

[0037] All raw materials used in this invention are commercially available.

[0038] Example 1

[0039] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0040] S1. Crush 4.95g of COC into powder, mix the COC powder with 50mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0041] S2. Mix 0.05 g of conjugated organic semiconductor polymer with 0.5 mL of toluene, heat at 120-160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0042] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add 25L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0043] S4. Blend the organic semiconductor masterbatch with 95g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0044] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0045] The structure of the conjugated organic semiconductor polymer is shown below:

[0046] ;

[0047] The number-average molecular weight (Mn) is 16397 Da, the PDI is 1.71, and the HT value is 91%.

[0048] Example 2

[0049] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0050] S1. Crush 14.985g of COC into powder, mix the COC powder with 750mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0051] S2. Mix 0.015 g of conjugated organic semiconductor polymer with 0.2 mL of toluene, heat at 120~160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0052] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution to form a homogeneous solution, add 75L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0053] S4. Blend the organic semiconductor masterbatch with 85g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0054] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0055] The structure of the conjugated organic semiconductor polymer is shown below:

[0056] ;

[0057] The number-average molecular weight (Mn) is 7423 Da, the PDI is 1.45, and the HT value is 80%.

[0058] Example 3

[0059] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0060] S1. Crush 4.95g of COP into powder, mix the COP powder with 50mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0061] S2. Mix 0.05 g of conjugated organic semiconductor polymer with 0.5 mL of toluene, heat at 120-160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0062] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add 25L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0063] S4. Blend the organic semiconductor masterbatch with 95g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0064] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0065] The structure of the conjugated organic semiconductor polymer is shown below:

[0066] ;

[0067] The number-average molecular weight (Mn) is 16397 Da, the PDI is 1.71, and the HT value is 91%.

[0068] Example 4

[0069] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0070] S1. Crush 14.985g of COP into powder, mix the COP powder with 750mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0071] S2. Mix 0.015 g of conjugated organic semiconductor polymer with 0.2 mL of toluene, heat at 120~160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0072] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution to form a homogeneous solution, add 75L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0073] S4. Blend the organic semiconductor masterbatch with 85g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0074] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0075] The structure of the conjugated organic semiconductor polymer is shown below:

[0076] ;

[0077] The number-average molecular weight (Mn) is 7423 Da, the PDI is 1.45, and the HT value is 80%.

[0078] Example 5

[0079] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0080] S1. Crush 4.95g of CBC into powder, mix the CBC powder with 50mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0081] S2. Mix 0.05 g of conjugated organic semiconductor polymer with 0.5 mL of toluene, heat at 120-160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0082] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add 25L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0083] S4. Blend the organic semiconductor masterbatch with 95g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0084] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0085] The structure of the conjugated organic semiconductor polymer is shown below:

[0086] ;

[0087] The number-average molecular weight (Mn) is 16397 Da, the PDI is 1.71, and the HT value is 91%.

[0088] Example 6

[0089] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0090] S1. Crush 14.985g of CBC into powder, mix the CBC powder with 750mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0091] S2. Mix 0.015 g of conjugated organic semiconductor polymer with 0.2 mL of toluene, heat at 120~160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0092] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution to form a homogeneous solution, add 75L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0093] S4. Blend the organic semiconductor masterbatch with 85g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0094] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0095] The structure of the conjugated organic semiconductor polymer is shown below:

[0096] ;

[0097] The number-average molecular weight (Mn) is 7423 Da, the PDI is 1.45, and the HT value is 80%.

[0098] Example 7

[0099] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0100] S1. Crush 4.95g of COC into powder, mix the COC powder with 50mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0101] S2. Mix 0.05 g of conjugated organic semiconductor polymer with 0.5 mL of toluene, heat at 120-160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0102] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add 25L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0103] S4. Blend the organic semiconductor masterbatch with 95g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0104] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0105] The structure of the conjugated organic semiconductor polymer is shown below:

[0106] ;

[0107] Among them, the number-average molecular weight Mn is 9.7 kDa, PDI is 3.51, HT value is 80%, x=5 mmol%, y=95 mmol.

[0108] Example 8

[0109] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0110] S1. Crush 14.985g of COC into powder, mix the COC powder with 750mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0111] S2. Mix 0.015 g of conjugated organic semiconductor polymer with 0.2 mL of toluene, heat at 120~160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0112] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution to form a homogeneous solution, add 75L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0113] S4. Blend the organic semiconductor masterbatch with 85g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0114] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0115] The structure of the conjugated organic semiconductor polymer is shown below:

[0116] ;

[0117] The number-average molecular weight (Mn) was 17.3 kDa, the PDI was 3.82, the HT value was 84.5%, x = 11.8 mmol%, and y = 88.2 mmol.

[0118] Example 9

[0119] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0120] S1. Crush 4.95g of COP into powder, mix the COP powder with 50mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0121] S2. Mix 0.05 g of conjugated organic semiconductor polymer with 0.5 mL of toluene, heat at 120-160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0122] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add 25L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0123] S4. Blend the organic semiconductor masterbatch with 95g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0124] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0125] The structure of the conjugated organic semiconductor polymer is shown below:

[0126] ;

[0127] Among them, the number-average molecular weight Mn is 9.7 kDa, PDI is 3.51, HT value is 80%, x=5 mmol%, y=95 mmol.

[0128] Example 10

[0129] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0130] S1. Crush 14.985g of COP into powder, mix the COP powder with 750mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0131] S2. Mix 0.015 g of conjugated organic semiconductor polymer with 0.2 mL of toluene, heat at 120~160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0132] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution to form a homogeneous solution, add 75L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0133] S4. Blend the organic semiconductor masterbatch with 85g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0134] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0135] The structure of the conjugated organic semiconductor polymer is shown below:

[0136] ;

[0137] The number-average molecular weight (Mn) was 17.3 kDa, the PDI was 3.82, the HT value was 84.5%, x = 11.8 mmol%, and y = 88.2 mmol.

[0138] Example 11

[0139] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0140] S1. Crush 4.95g of CBC into powder, mix the CBC powder with 50mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0141] S2. Mix 0.05 g of conjugated organic semiconductor polymer with 0.5 mL of toluene, heat at 120-160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0142] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add 25L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0143] S4. Blend the organic semiconductor masterbatch with 95g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0144] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0145] The structure of the conjugated organic semiconductor polymer is shown below:

[0146] ;

[0147] Among them, the number-average molecular weight Mn is 9.7 kDa, PDI is 3.51, HT value is 80%, x=5 mmol%, y=95 mmol.

[0148] Example 12

[0149] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0150] S1. Crush 14.985g of CBC into powder, mix the CBC powder with 750mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0151] S2. Mix 0.015 g of conjugated organic semiconductor polymer with 0.2 mL of toluene, heat at 120~160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0152] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution to form a homogeneous solution, add 75L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0153] S4. Blend the organic semiconductor masterbatch with 85g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0154] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0155] The structure of the conjugated organic semiconductor polymer is shown below:

[0156] ;

[0157] The number-average molecular weight (Mn) was 17.3 kDa, the PDI was 3.82, the HT value was 84.5%, x = 11.8 mmol%, and y = 88.2 mmol.

[0158] Example 13

[0159] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0160] S1. Crush 4.95g of COC into powder, mix the COC powder with 50mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0161] S2. Mix 0.05 g of conjugated organic semiconductor polymer with 0.5 mL of toluene, heat at 120-160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0162] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add 25L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0163] S4. Blend the organic semiconductor masterbatch with 95g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0164] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0165] The structure of the conjugated organic semiconductor polymer is shown below:

[0166] ;

[0167] The number-average molecular weight (Mn) was 13.8 kDa, the PDI was 2.2, the HT value was 85%, and the values ​​were x = 4.3 mmol% and y = 95.7 mmol.

[0168] Example 14

[0169] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0170] S1. Crush 14.985g of COC into powder, mix the COC powder with 750mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0171] S2. Mix 0.015 g of conjugated organic semiconductor polymer with 0.2 mL of toluene, heat at 120~160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0172] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution to form a homogeneous solution, add 75L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0173] S4. Blend the organic semiconductor masterbatch with 85g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0174] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0175] The structure of the conjugated organic semiconductor polymer is shown below:

[0176] ;

[0177] Among them, the number-average molecular weight Mn is 4.7 kDa, PDI is 1.3, HT value is 83%, x=20 mmol%, y=80 mmol.

[0178] Example 15

[0179] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0180] S1. Crush 4.95g of COP into powder, mix the COP powder with 50mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0181] S2. Mix 0.05 g of conjugated organic semiconductor polymer with 0.5 mL of toluene, heat at 120-160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0182] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add 25L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0183] S4. Blend the organic semiconductor masterbatch with 95g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0184] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0185] The structure of the conjugated organic semiconductor polymer is shown below:

[0186] ;

[0187] The number-average molecular weight (Mn) was 13.8 kDa, the PDI was 2.2, the HT value was 85%, and the values ​​were x = 4.3 mmol% and y = 95.7 mmol.

[0188] Example 16

[0189] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0190] S1. Crush 14.985g of COP into powder, mix the COP powder with 750mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0191] S2. Mix 0.015 g of conjugated organic semiconductor polymer with 0.2 mL of toluene, heat at 120~160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0192] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution to form a homogeneous solution, add 75L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0193] S4. Blend the organic semiconductor masterbatch with 85g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0194] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0195] The structure of the conjugated organic semiconductor polymer is shown below:

[0196] ;

[0197] Among them, the number-average molecular weight Mn is 4.7 kDa, PDI is 1.3, HT value is 83%, x=20 mmol%, y=80 mmol.

[0198] Example 17

[0199] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0200] S1. Crush 4.95g of CBC into powder, mix the CBC powder with 50mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0201] S2. Mix 0.05 g of conjugated organic semiconductor polymer with 0.5 mL of toluene, heat at 120-160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0202] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add 25L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0203] S4. Blend the organic semiconductor masterbatch with 95g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0204] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0205] The structure of the conjugated organic semiconductor polymer is shown below:

[0206] ;

[0207] The number-average molecular weight (Mn) was 13.8 kDa, the PDI was 2.2, the HT value was 85%, and the values ​​were x = 4.3 mmol% and y = 95.7 mmol.

[0208] Example 18

[0209] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0210] S1. Crush 14.985g of CBC into powder, mix the CBC powder with 750mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0211] S2. Mix 0.015 g of conjugated organic semiconductor polymer with 0.2 mL of toluene, heat at 120~160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0212] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution to form a homogeneous solution, add 75L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0213] S4. Blend the organic semiconductor masterbatch with 85g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0214] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0215] The structure of the conjugated organic semiconductor polymer is shown below:

[0216] ;

[0217] Among them, the number-average molecular weight Mn is 4.7 kDa, PDI is 1.3, HT value is 83%, x=20 mmol%, y=80 mmol.

[0218] Example 19

[0219] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0220] S1. Crush 4.95g of COC into powder, mix the COC powder with 50mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0221] S2. Mix 0.05 g of conjugated organic semiconductor polymer with 0.5 mL of toluene, heat at 120-160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0222] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add 25L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0223] S4. Blend the organic semiconductor masterbatch with 95g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0224] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0225] The structure of the conjugated organic semiconductor polymer is shown below:

[0226] ;

[0227] Among them, the number-average molecular weight Mn is 13.5 kDa, PDI is 2.5, HT value is 87%, x=2.5 mmol%, y=97.5 mmol.

[0228] Example 20

[0229] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0230] S1. Crush 14.985g of COC into powder, mix the COC powder with 750mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0231] S2. Mix 0.015 g of conjugated organic semiconductor polymer with 0.2 mL of toluene, heat at 120~160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0232] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution to form a homogeneous solution, add 75L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0233] S4. Blend the organic semiconductor masterbatch with 85g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0234] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0235] The structure of the conjugated organic semiconductor polymer is shown below:

[0236] ;

[0237] The number-average molecular weight (Mn) was 7.5 kDa, the PDI was 2.1, the HT value was 89%, x = 13.9 mmol%, and y = 86.1 mmol.

[0238] Example 21

[0239] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0240] S1. Crush 4.95g of COP into powder, mix the COP powder with 50mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0241] S2. Mix 0.05 g of conjugated organic semiconductor polymer with 0.5 mL of toluene, heat at 120-160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0242] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add 25L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0243] S4. Blend the organic semiconductor masterbatch with 95g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0244] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0245] The structure of the conjugated organic semiconductor polymer is shown below:

[0246] ;

[0247] Among them, the number-average molecular weight Mn is 13.5 kDa, PDI is 2.5, HT value is 87%, x=2.5 mmol%, y=97.5 mmol.

[0248] Example 22

[0249] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0250] S1. Crush 14.985g of COP into powder, mix the COP powder with 750mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0251] S2. Mix 0.015 g of conjugated organic semiconductor polymer with 0.2 mL of toluene, heat at 120~160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0252] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution to form a homogeneous solution, add 75L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0253] S4. Blend the organic semiconductor masterbatch with 85g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0254] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0255] The structure of the conjugated organic semiconductor polymer is shown below:

[0256] ;

[0257] The number-average molecular weight (Mn) was 7.5 kDa, the PDI was 2.1, the HT value was 89%, x = 13.9 mmol%, and y = 86.1 mmol.

[0258] Example 23

[0259] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0260] S1. Crush 4.95g of CBC into powder, mix the CBC powder with 50mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0261] S2. Mix 0.05 g of conjugated organic semiconductor polymer with 0.5 mL of toluene, heat at 120-160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0262] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add 25L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0263] S4. Blend the organic semiconductor masterbatch with 95g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0264] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0265] The structure of the conjugated organic semiconductor polymer is shown below:

[0266] ;

[0267] Among them, the number-average molecular weight Mn is 13.5 kDa, PDI is 2.5, HT value is 87%, x=2.5 mmol%, y=97.5 mmol.

[0268] Example 24

[0269] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0270] S1. Crush 14.985g of CBC into powder, mix the CBC powder with 750mL of toluene, heat at 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution;

[0271] S2. Mix 0.015 g of conjugated organic semiconductor polymer with 0.2 mL of toluene, heat at 120~160 °C to dissolve, and obtain a conjugated organic semiconductor polymer solution;

[0272] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution to form a homogeneous solution, add 75L of ethanol, precipitate, and take the precipitate to obtain the organic semiconductor masterbatch;

[0273] S4. Blend the organic semiconductor masterbatch with 85g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0274] S5. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0275] The structure of the conjugated organic semiconductor polymer is shown below:

[0276] ;

[0277] The number-average molecular weight (Mn) was 7.5 kDa, the PDI was 2.1, the HT value was 89%, x = 13.9 mmol%, and y = 86.1 mmol.

[0278] Comparative Example 1

[0279] This comparative example provides a high-temperature resistant BOPP capacitor film, which differs from Example 1 only in that it does not contain a conjugated organic semiconductor polymer. The specific preparation steps are as follows:

[0280] S1. Crush 5g of COC into powder, mix the COC powder with 50mL of toluene, heat to 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution. Add 25L of ethanol, precipitate, and take the precipitate to obtain an organic semiconductor masterbatch.

[0281] S2. Blend the organic semiconductor masterbatch with 95g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0282] S3. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, and setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, and setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0283] Comparative Example 2

[0284] This comparative example provides a high-temperature resistant BOPP capacitor film, which differs from Example 1 only in that it does not contain a conjugated organic semiconductor polymer. The specific preparation steps are as follows:

[0285] S1. Crush 10g of COC into powder, mix the COC powder with 50mL of toluene, heat to 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution. Add 25L of ethanol, precipitate, and take the precipitate to obtain an organic semiconductor masterbatch.

[0286] S2. Blend the organic semiconductor masterbatch with 90g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0287] S3. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, and setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, and setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0288] Comparative Example 3

[0289] This comparative example provides a high-temperature resistant BOPP capacitor film, which differs from Example 1 only in that it does not contain a conjugated organic semiconductor polymer. The specific preparation steps are as follows:

[0290] S1. Crush 20g of COC into powder, mix the COC powder with 50mL of toluene, heat to 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution. Add 25L of ethanol, precipitate, and take the precipitate to obtain an organic semiconductor masterbatch.

[0291] S2. Blend the organic semiconductor masterbatch with 80g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0292] S3. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, and setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, and setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0293] Comparative Example 4

[0294] This comparative example provides a high-temperature resistant BOPP capacitor film, which differs from Example 3 only in that it does not contain a conjugated organic semiconductor polymer. The specific preparation steps are as follows:

[0295] S1. Crush 20g of COP into powder, mix COP powder with 50mL of toluene, heat to 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution. Add 25L of ethanol, precipitate, and take the precipitate to obtain an organic semiconductor masterbatch.

[0296] S2. Blend the organic semiconductor masterbatch with 80g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0297] S3. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, and setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, and setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0298] Comparative Example 5

[0299] This comparative example provides a high-temperature resistant BOPP capacitor film, which differs from Example 5 only in that it does not contain a conjugated organic semiconductor polymer. The specific preparation steps are as follows:

[0300] S1. Crush 20g of CBC into powder, mix the CBC powder with 50mL of toluene, heat to 120~160℃ to dissolve, and obtain a cyclic olefin polymer solution. Add 25L of ethanol, precipitate, and take the precipitate to obtain an organic semiconductor masterbatch.

[0301] S2. Blend the organic semiconductor masterbatch with 80g of polypropylene powder, and melt-extrude at 180-230℃ to obtain a polypropylene composite material;

[0302] S3. Add the polypropylene composite material to a twin-screw extruder with an aspect ratio of 40:1 to process it into a uniform melt. The melt is then extruded and cast through a die to prepare a thin film. The die temperature is 230℃. The thin film is then subjected to biaxial stretching: longitudinal stretching: preheating 143℃, stretching 138℃, and setting 143℃; transverse stretching: preheating 165℃, stretching 159℃, and setting 167℃. After corona treatment with a strength of 43mN / m, the film is wound up to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5μm.

[0303] Examples 25-48

[0304] This embodiment provides a thin-film capacitor, and the specific preparation steps are as follows:

[0305] The high-temperature resistant BOPP capacitor films of Examples 1 to 24 were respectively subjected to coating, winding, static pressing, heat setting, gold sputtering, and encapsulation to obtain the thin film capacitors of Examples 25 to 48.

[0306] Comparative Examples 6-10

[0307] This comparative example provides a thin-film capacitor, and the specific fabrication steps are as follows:

[0308] The high-temperature resistant BOPP capacitor films of Comparative Examples 1 to 5 were respectively subjected to coating, winding, static pressing, heat setting, gold sputtering, and encapsulation to obtain film capacitors of Comparative Examples 6 to 10.

[0309] Performance testing:

[0310] The performance of the film capacitors of Examples 25-48 and Comparative Examples 6-10 was tested, and the results are shown in Table 1.

[0311] Capacitance change rate test: The initial capacitance value was tested by connecting the two electrodes of the film capacitors of Examples 25-48 and Comparative Examples 6-10 to a power supply, respectively. Then, the film capacitors of Examples 25-48 and Comparative Examples 6-10 were placed in a 125°C constant temperature oven with a DC voltage of 900V applied. The capacitance value was measured after different hours of operation in the oven, and the final capacitance value was measured after 1000 hours. Three groups of experiments were conducted, and the capacitance change rate was calculated by averaging. A capacitance change exceeding -5.0% indicated that the capacitor had failed. The results are shown in Table 1.

[0312] Table 1. Test results of capacitance change rate of thin film capacitor film.

[0313]

[0314] As shown in Table 1, the film capacitor of the present invention has a small capacitance change rate and high high-temperature durability.

[0315] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that after reading this application specification, they can still modify or make equivalent substitutions to the specific implementation of the present invention, but these modifications or changes do not depart from the protection scope of the pending claims of the present invention.

Claims

1. A high-temperature resistant BOPP capacitor film, characterized in that, The materials used to prepare the high-temperature resistant BOPP capacitor film include polypropylene and organic semiconductor masterbatch, wherein the organic semiconductor masterbatch includes conjugated organic semiconductor polymer and cyclic olefin polymer; The amount of the organic semiconductor masterbatch used, by weight percentage, is 5-15% of the high-temperature resistant BOPP capacitor film; The amount of the conjugated organic semiconductor polymer used, by weight percentage, is 0.1% to 1% of the organic semiconductor masterbatch; The cyclic olefin polymer is selected from at least one of COC, COP, and CBC; The conjugated organic semiconductor polymer is selected from poly(3-hexylthiophene) or thiophene copolymer; The thiophene copolymer is selected from copolymers with any of the following structures: , , The number-average molecular weight is 4.7~17.3 kDa.

2. The high-temperature resistant BOPP capacitor film as described in claim 1, characterized in that, The hexylthiophene segment of the thiophene copolymer accounts for 80% to 97.1% of the molar percentage of the thiophene copolymer.

3. The high-temperature resistant BOPP capacitor film as described in claim 1, characterized in that, The isotacticity of the thiophene copolymer is ≥80%.

4. The method for preparing the high-temperature resistant BOPP capacitor film according to any one of claims 1 to 3, characterized in that, Includes the following steps: S1. The cyclic olefin polymer is pulverized into powder, the cyclic olefin polymer powder is mixed with a solvent, and heated to dissolve, thus obtaining a cyclic olefin polymer solution; S2. Mix the conjugated organic semiconductor polymer with a solvent, heat to dissolve, and obtain a conjugated organic semiconductor polymer solution; S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution to form a homogeneous solution, add a poor solvent, precipitate, and obtain an organic semiconductor masterbatch; S4. The organic semiconductor masterbatch is blended with polypropylene powder and melt-extruded to obtain a polypropylene composite material; S5. The polypropylene composite material is processed into a plastic melt, extruded and cast, and biaxially stretched to obtain a high-temperature resistant BOPP capacitor film.

5. A thin-film capacitor, characterized in that, The base film of the thin-film capacitor is made of the high-temperature resistant BOPP capacitor film as described in any one of claims 1 to 3 or the high-temperature resistant BOPP capacitor film prepared by the method described in claim 4.

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