Crystal face orientation method, crystal face orientation apparatus, and crystal processing apparatus

Abstract

The application provides a crystal face orientation method, a crystal face orientation instrument and a crystal processing device. The crystal face orientation method comprises the following steps: adjusting the crystal face orientation instrument so that the included angle between the signal emission direction and the signal receiving direction is equal to the diffraction angle when the predetermined homologous crystal face of the to-be-detected crystal satisfies the Bragg diffraction; establishing a space rectangular coordinate system, taking a predetermined reflection point as the origin, making the X axis parallel to the rotation axis of the to-be-detected crystal, making the signal emission direction parallel to the XOY plane, and making the included angle between the signal emission direction and the X axis equal to the Bragg angle θ of the predetermined homologous crystal face B ; driving the to-be-detected crystal to rotate around the rotation crystal axis, receiving the diffraction signal through the receiver and recording the rotation angle stroke S during the rotation, the rotation crystal axis is parallel to the X axis and perpendicular to the reference axis, the rotation angle stroke is the rotation angle of the to-be-detected crystal from the initial state to the time when the diffraction signal reaches the peak value; and determining the end face crystal orientation deviation angle α, the end face crystal orientation positioning angle ω and the end face crystal orientation tilt direction angle Φ according to at least three groups of rotation angle strokes S.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device manufacturing technology, and in particular to a crystal plane orientation method, a crystal plane orientation instrument, and crystal processing equipment. Background Technology

[0002] Before crystal processing, crystal orientation is required. Crystal orientation determines the end-face and side-face orientations of the unit cell, thereby determining the deviation between the end-face orientations and the actual physical axes of the crystal, and identifying the positions of flat edges or notch grooves. Currently, crystal orientation faces challenges such as being time-consuming, cumbersome, requiring complex crystal processing equipment, and being prone to introducing errors. Summary of the Invention

[0003] In view of this, the present invention provides a crystal plane orientation method that is simple and quick to operate and does not easily introduce errors, and provides a crystal plane orientation instrument and crystal processing equipment with a simple structure.

[0004] The crystal plane orientation method of the present invention is based on a crystal plane orientation instrument and a crystal carrier. The crystal plane orientation instrument includes a transmitter and a receiver configured with predetermined reflection points, and the transmitter and receiver are respectively arranged along different radial directions of a predetermined reference axis. The crystal plane orientation method includes:

[0005] Step A: Adjust the crystal plane orientation instrument so that the angle between the signal emission direction and the signal reception direction is equal to the diffraction angle when the predetermined homogeneous crystal planes in the crystal under test satisfy Bragg diffraction;

[0006] Step B: Establish a spatial rectangular coordinate system, with the predetermined reflection point as the origin. Make the X-axis parallel to the rotation axis of the crystal under test, the signal emission direction parallel to the XOY plane, and the angle between the signal emission direction and the X-axis equal to the Bragg angle θ of the predetermined crystal plane. B ;

[0007] Step C: Drive the crystal under test to rotate around the crystal rotation axis. During this period, the diffraction signal is received by the receiver and the rotation angle S is recorded. The crystal rotation axis is parallel to the X-axis and perpendicular to the reference axis. The rotation angle is the rotation angle of the crystal under test from the initial state to when the diffraction signal reaches the peak.

[0008] Step D: Determine the end face crystal orientation angle α, the end face crystal orientation positioning angle ω, and the end face crystal orientation tilt direction angle Φ based on at least three sets of rotation strokes S.

[0009] The end-face crystal orientation deflection angle α is the angle between the crystallization axis and the end-face crystal orientation of the unit cell; the end-face crystal orientation positioning angle ω is the angle between the projection of the end-face crystal orientation and the reference axis of the outer circle of the unit cell; and the end-face crystal orientation tilt angle Φ is the angle between the Z-axis and the projection of the end-face crystal orientation of the crystal under test when it is in its initial state.

[0010] The end face crystal orientation projection is the orthographic projection of the end face crystal orientation guide line onto the YOZ plane, and the extension direction of the end face crystal orientation guide line is the end face crystal orientation of the unit cell of the crystal under test.

[0011] The crystal plane orientation method of the present invention is simplified, and the operation of the crystal plane orientation instrument is easier. Only one crystal plane orientation instrument needs to be set up. It is only necessary to drive the crystal under test to rotate and receive the diffraction signal in real time through the receiver to complete the relevant operations of the crystal plane orientation instrument. During the orientation, there is no need to adjust the position and orientation of the crystal plane orientation instrument. The crystal under test is always loaded on the crystal carrier. There is no need to unload and reload the crystal under test, thus avoiding the installation error caused by repeated loading and unloading of the crystal under test, which introduces crystal plane orientation error.

[0012] In some embodiments, the receiver includes a first receiving end and a second receiving end, which are symmetrically arranged on both sides of the XOY plane.

[0013] Step D includes: at least three sets of rotational strokes S, which include the rotation angle of the crystal under test from the initial state to the point where the first receiving end receives the peak diffraction signal, and also the rotation angle of the crystal under test from the initial state to the point where the second receiving end receives the peak diffraction signal.

[0014] With this setup, the predetermined family crystal planes under test can be observed from two different positions through two receiving ends, thereby obtaining sufficient information about the orientation of the cell end faces and the predetermined family crystal planes.

[0015] In some implementations, step C includes:

[0016] The crystal rotation axis is the physical axis of the crystal under test;

[0017] With the YOZ plane being observed and the positive X-axis pointing towards the observer's viewpoint, the crystal under test is rotated counterclockwise relative to the crystal plane orientation instrument by the crystal carrier; the positive Y-axis is the direction of rightward extension of the Y-axis, and the positive Z-axis is the direction of upward extension of the Z-axis;

[0018] Step D includes:

[0019] Step D1: Substitute at least three sets of rotation strokes S into the crystal orientation solution to solve for the end face crystal orientation deflection angle α, the end face crystal orientation positioning angle ω, and the end face crystal orientation tilt direction angle Φ. The general formula for the crystal orientation solution is:

[0020] β is the Bragg angle θ of the predetermined family crystal plane. B The complementary angle; γ is the angle between the signal emission direction and the X-axis, and γ is equal to the Bragg angle θ of the predetermined crystal plane of the same family. B .

[0021] In some implementations, step C includes:

[0022] Step C1: Drive the crystal under test to rotate around the crystal axis until the diffraction signal on the side of the first unit cell in the predetermined crystal plane reaches the peak value and is received by one of the first receiving end and the second receiving end. Record the rotation angle S1 of the crystal under test at the current moment relative to the initial state.

[0023] Step C2: Drive the crystal under test to rotate around the crystal axis until the diffraction signal on the side of the first unit cell reaches the peak again and is received by the other of the first and second receiving ends. Record the rotation angle S2 of the crystal under test relative to the initial state at the current moment.

[0024] Step C3: Drive the crystal under test to rotate around the crystal rotation axis until the diffraction signal on the side of the second unit cell in the predetermined crystal plane reaches the peak value and is received by the first receiving end or the second receiving end. Record the rotation angle S3 of the crystal under test at the current moment relative to the initial state.

[0025] In this case, the side surfaces of the first unit cell and the side surfaces of the second unit cell are not parallel to each other.

[0026] This setup allows for indirect observation of predetermined crystal planes by acquiring diffraction signals from two different locations using two receivers. The crystal orientation parameters of the crystal under test are then determined in a Cartesian coordinate system by using the relatively distinct and non-parallel first and second unit cell side faces. According to linear algebra, to solve for the facet orientation deflection angle α, facet orientation positioning angle ω, and facet orientation tilt angle Φ, the unit cell side faces corresponding to the multiple rotational strokes S in the crystal orientation solution must be non-parallel. For example, some crystals have four unit cell side faces, forming the four sides of a cuboid. Using only one receiver would be insufficient for orienting such crystals with only four unit cell side faces, because two of the three peak diffraction signals acquired by the receiver would necessarily correspond to parallel unit cell side faces. The advantage of having two receivers is that the same cell side undergoes Bragg diffraction once in each of the two orientations, and the two diffraction signals of the cell side are received by the two receivers sequentially, thus generating two angular travels S1 and S2. Although these two angular travels correspond to the same cell side, the cell side is not parallel in the two orientation states at the two Bragg diffraction times. Next, another cell side only needs to undergo Bragg diffraction once more to obtain another angular travel S3. The cell side that undergoes Bragg diffraction for the third time is not parallel to the cell side that underwent Bragg diffraction in the first two times. In this way, the cell sides corresponding to the three peak diffraction signals are not parallel to each other, so they can be solved by crystal orientation solution.

[0027] In some implementations, the crystal orientation solution includes a first calculation formula and a second calculation formula.

[0028] The first calculation formula for solving the crystal orientation problem is:

[0029] ;

[0030] The second calculation formula for the crystal orientation solution is:

[0031] ;

[0032] Step D1 includes:

[0033] Step D11: Substitute the turning stroke S1 into the first calculation formula to obtain the first solution equation;

[0034] Step D12: Substitute the turning angle travel S2 into the first calculation formula to obtain the second solution equation;

[0035] Step D13: Substitute the turning stroke S3 into the second calculation formula to obtain the third solution equation;

[0036] Solving the first, second, and third equations simultaneously yields the end face crystal orientation deflection angle α, the end face crystal orientation positioning angle ω, and the end face crystal orientation tilt direction angle Φ.

[0037] m is the angle between the crystal orientations of any two adjacent crystal planes in the predetermined family of crystal planes, and n is the difference in position number between the first cell side surface and the second cell side surface. The difference in position number between the first cell side surface and the second cell side surface is not equal to 180° / m.

[0038] In some embodiments, step C3 includes:

[0039] Step C31: Drive the crystal under test to rotate around the crystal axis until the diffraction signal on the side of the second unit cell in the predetermined crystal plane reaches the peak value and is received by one of the first receiving end and the second receiving end. Record the rotation angle S3 of the crystal under test at the current moment relative to the initial state.

[0040] Step C32: Drive the crystal under test to rotate around the crystal axis until the diffraction signal on the side of the second unit cell reaches the peak value again and is received by the other of the first and second receiving ends. Record the rotation angle S4 of the crystal under test at the current moment relative to the initial state.

[0041] Step D1 further includes:

[0042] Step D14: Substitute the turning stroke S4 into the second calculation formula to obtain the fourth solution equation;

[0043] If the fourth equation holds true, then the results for the end face crystal orientation deflection angle α, the end face crystal orientation positioning angle ω, and the end face crystal orientation tilt direction angle Φ are correct.

[0044] With this setup, after substituting the rotation stroke S4 into the second calculation formula of the crystal orientation solution, the calculation can be verified based on whether the fourth solution equation holds, ensuring that the calculation results of the end face crystal orientation deflection angle α, the end face crystal orientation positioning angle ω, and the end face crystal orientation tilt direction angle Φ are accurate.

[0045] In some embodiments, the crystal orientation method can be used to determine the crystal orientation of a single-crystal silicon crystal, wherein the predetermined homogeneous crystal planes comprise six unit cell lateral faces symmetrically arranged about the end face crystal orientation guide line, and m is 60°.

[0046] The crystal orientation instrument of the present invention is a crystal orientation instrument used when performing a crystal orientation method. The crystal orientation instrument includes a body, a transmitter, and a receiver. The body includes a crystal placement side. The transmitter is tilted relative to the crystal placement side along the crystal orientation of a preset reference axis. The receiver is tilted relative to the crystal placement side along the radial direction of the preset reference axis. The tilt direction of the transmitter is different from the tilt direction of the receiver. The predetermined reflection point is located on the reference axis.

[0047] In some embodiments, the receiver includes a first receiving end and a second receiving end, the first receiving end and the second receiving end being symmetrical about a preset XOY plane, the XOY plane being parallel to the signal transmission direction of the transmitter.

[0048] The crystal processing equipment of the present invention includes a crystal carrier, a crystal processing apparatus, and a crystal plane orientation instrument. Attached Figure Description

[0049] Figure 1 This is a partial structural schematic diagram of a crystal processing apparatus according to one embodiment of the present invention;

[0050] Figure 2 This is a partial structural schematic diagram of a crystal plane orientation instrument according to one embodiment of the present invention;

[0051] Figure 3 This is a partial structural schematic diagram of a crystal plane orientation instrument according to another embodiment of the present invention;

[0052] Figure 4 for Figure 3 The image shows a magnified view of the crystal plane orientation instrument at point A.

[0053] Figure 5 for Figure 3 The diagram shows a partial structural schematic of the crystal plane orientation instrument.

[0054] Figure 6 This is a schematic diagram of the first and second arc-shaped guide rails of a crystal plane orientation instrument according to one embodiment of the present invention;

[0055] Figure 7A schematic diagram of a single-crystal silicon unit cell;

[0056] Figure 8 This is a schematic diagram of Bragg diffraction occurring on the sidewalls of a single-crystal silicon unit cell.

[0057] Figure 9 This is a schematic diagram of a single-crystal silicon unit cell in a spatial rectangular coordinate system;

[0058] Figure 10 This is a schematic diagram of the first working state of a crystal plane orientation instrument according to one embodiment of the present invention;

[0059] Figure 11 This is a schematic diagram of the second working state of a crystal plane orientation instrument according to one embodiment of the present invention;

[0060] Figure 12 This is a first schematic diagram in a spatial rectangular coordinate system when a single-crystal silicon unit cell undergoes Bragg diffraction according to an embodiment of the present invention.

[0061] Figure 13 This is a second schematic diagram in a spatial rectangular coordinate system when a single-crystal silicon unit cell undergoes Bragg diffraction according to one embodiment of the present invention.

[0062] Figure 14 This is a third schematic diagram in a spatial rectangular coordinate system when a single-crystal silicon unit cell undergoes Bragg diffraction according to one embodiment of the present invention.

[0063] Figure 15 This is a fourth schematic diagram in a spatial rectangular coordinate system showing Bragg diffraction of a single-crystal silicon cell according to one embodiment of the present invention.

[0064] Reference numerals: 10. Fuselage; 11. Base plate; 12. Crystal mounting side; 20. Transmitter; 21. X-ray generator; 22. Collimator; 23. Transmitter support; 30. Receiver; 31. First receiver; 32. Second receiver; 33. Guide hole; 34. Receiver support; 40. Distance sensor; 51. First drive component; 52. First worm gear mechanism; 521. First worm gear section; 522. First worm... 53. Rod; 531. First arc-shaped guide rail; 532. Second arc-shaped segment; 54. Grating ruler; 55. Scale indicator; 61. Second driving component; 62. Second worm gear mechanism; 621. Second worm gear part; 622. Second worm part; 63. Second arc-shaped guide rail; 631. Third arc-shaped segment; 632. Fourth arc-shaped segment; 210. Unit cell end face; 220. Unit cell side face; 300. Crystal to be tested. Detailed Implementation

[0065] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0066] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "or / and" as used herein includes any and all combinations of one or more of the associated listed items.

[0067] This invention provides a crystal plane orientation method based on a crystal plane orientation instrument, and provides a crystal plane orientation instrument and crystal processing equipment. The crystal processing equipment includes a crystal carrier, a crystal processing device, and the crystal plane orientation instrument. The crystal processing equipment can be a crystal slicing machine or a crystal grinding machine. Specifically, the crystal slicing machine can be a wire cutter using diamond wire as the cutting material, or a laser stealth cutter that uses laser to cut crystals using a non-contact cutting method.

[0068] Crystal plane orientation refers to determining the position, distribution, and orientation angle of the crystal planes of the unit cell of the crystal under test 300 in space. The crystal obtained through crystal growth is cylindrical, and the unit cell includes the end face 210 and the side face 220. The task of crystal plane orientation includes determining the deviation between the end face 210 and the actual physical axis of the crystal under test, as well as determining the position and orientation of the side face 220, thereby providing a basis for determining the position of the flat edge or notch groove of the crystal. The crystal processing equipment is used to process the crystal under test that has completed crystal plane orientation. Before introducing the crystal plane orientation method, we will first introduce the crystal plane orientation instrument and the crystal processing equipment.

[0069] It should be noted that the cell end face 210 and cell side face 220 are not absolute. Given the cell structure, both the cell end face 210 and cell side face 220 can be manually selected. For example, once the orientation tester selects the cell end face 210 for a certain crystal material, the cell side face 220 is determined; similarly, once the orientation tester selects the cell side face 220 for a certain crystal material, the cell end face 210 is subsequently determined. Figure 7 , Figure 9Taking the single-crystal silicon cell as an example, when the crystal to be tested is a cylindrical crystal rod, the 111-type crystal plane in the cell and the physical end face of the crystal rod have approximately the same orientation. If the orientation tester selects the 111-type crystal plane as the end face 210 of the cell, then the 110-type crystal plane is used as the side face 220 of the cell. If a straight line perpendicular to the 111-type crystal plane is drawn through the geometric center of the 111-type crystal plane, then six 110-type crystal planes symmetrical about the straight line are distributed on the outer periphery of the straight line.

[0070] In particular, once the cell end face 210 is selected, the cell side face 220 that is symmetrically distributed about the central normal of the cell end face 210 is simply referred to as the predetermined family crystal plane. The central normal of the cell end face 210 is a straight line that passes through the geometric center of the cell end face 210 and is perpendicular to the cell end face 210.

[0071] See Figures 1-3 The crystal orientation instrument includes a body 10, a transmitter 20, and a receiver 30. The crystal processing equipment includes a crystal orientation instrument, a crystal carrier (not shown), and a crystal processing device. The body 10 includes a base plate 11 and a crystal mounting side 12. The base plate 11 can be a horizontally arranged flat plate. The transmitter 20 and the receiver 30 are respectively inclined relative to the crystal mounting side 12 along different radial directions of a preset reference axis. The reference axis is perpendicular to the base plate 11. In other words, the transmitter 20 is inclined relative to the crystal mounting side 12 along the radial direction of the reference axis, and the receiver 30 is inclined along the reference axis. The transmitter 20 is tilted radially relative to the crystal mounting side 12, and the tilt direction of the transmitter 20 is different from the tilt direction of the receiver 30. The crystal carrier includes a support part and a loading part. The support part is fixed relative to the body 10, and the loading part is rotatably disposed on the support part around a preset crystal rotation axis. The loading part is used to load the crystal to be tested and drive the crystal to be tested 300 to rotate relative to the body 10 around the crystal rotation axis. The crystal rotation axis is located on the same side of the transmitter 20 and the receiver 30 and is spaced apart from the crystal mounting side 12. The crystal rotation axis is perpendicular to the reference axis and parallel to the horizontally arranged base plate 11.

[0072] The crystal plane orientation method and crystal plane orientation instrument of the present invention are based on the principle of X-ray diffraction. During the crystal plane orientation process, the crystal under test 300 is located outside the crystal mounting side 12 and on the same side of the transmitter 20 and the receiver 30. The transmitter 20 emits an incident signal to the crystal under test 300. The incident signal is X-rays. The incident signal is reflected by the unit cell side surface 220 of the crystal under test 300. The receiver 30 is used to receive the reflected signal reflected by the unit cell side surface 220. The reflected signal is the X-ray diffraction optical path, which can also be called the diffraction signal. The crystal plane orientation instrument can be operated by simply having the mounting part drive the crystal under test 300 to rotate around the crystal axis. During this period, the diffraction signal is received in real time by the receiver 30.

[0073] The transmitter 20 has its own signal transmission direction, and the receiver 30 has its own signal reception direction. For the transmitter 20 and receiver 30 installed on the body 10, the signal transmission direction is radial to the reference axis and is inclined relative to the crystal mounting side 12. The signal reception direction is also radial to the reference axis and is also inclined relative to the crystal mounting side 12. The signal transmission direction and the signal reception direction have different inclination directions. The angle between the signal transmission direction and the signal reception direction is not equal to 0° or 180°, and can be an acute angle, a right angle or an obtuse angle.

[0074] Optionally, in some embodiments, after the crystal under test 300 is loaded into the loading unit, the crystal rotation axis coincides with the actual physical axis of the crystal under test 300, and the loading unit drives the crystal under test 300 to rotate relative to the machine body 10 around the actual physical axis of the crystal under test 300. For example... Figure 1 As shown, the extension direction of the actual physical axis of the crystal under test 300 is simply referred to as the physical axis of the crystal under test 300. The actual physical axis of the crystal under test 300 is located in... Figure 1 R1 is used to denote this. During crystal plane orientation, the crystal under test (DUT) 300 is always mounted on the loading section and located on the same side of the transmitter 20 and receiver 30. The incident signal enters the DUT 300 from its outer periphery and is then reflected by the unit cell side surface 220 of the DUT 300. The diffracted signal leaves the outer periphery of the DUT 300 and is received by the receiver 30. It is worth noting that the crystal rotation axis and the physical axis of the DUT 300 do not necessarily have to coincide; they can also form an angle.

[0075] See Figure 1 and Figure 2 The transmitter 20 includes an X-ray generator 21 and a collimator 22. The collimator 22 includes a transmitting end for emitting linear X-rays, and the signal emission direction is the axial direction of the transmitting end. The receiver 30 includes a scintillation counter equipped with a receiving end. In some embodiments, the scintillation counter includes a first counter with a first receiving end 31 and a second counter with a second receiving end 32. The axis of the first receiving end 31 is parallel to the axis of the second receiving end 32. The first receiving end 31 and the second receiving end 32 are arranged side by side along the extension direction of the reference axis, and the signal receiving direction is the extension direction of the axis of the first receiving end 31 and the extension direction of the axis of the second receiving end 32. The crystal transfer axis is located outside the transmitter and outside the two receiving ends. When the crystal under test 300 is loaded in the loading part, the transmitter is inclined radially towards the outer periphery of the crystal under test 300 along one radial direction of the reference axis, and the first receiving end 31 and the second receiving end 32 are inclined radially towards the outer periphery of the crystal under test 300 along the other radial direction of the reference axis.

[0076] The transmitter 20 and receiver 30 are configured with predetermined reflection points. A plane containing the axis of the first receiver 31 and the axis of the second receiver 32 is constructed. A central reference line exists within this plane, which is parallel to the axis of the first receiver 31 and the axis of the second receiver 32. The distance from the central reference line to the axis of the first receiver 31 is equal to the distance from the central reference line to the axis of the second receiver 32. The intersection of the central reference line and the signal transmission path of the transmitter 20 is the predetermined reflection point. The predetermined reflection point is located on the reference axis, and the signal transmission path of the transmitter 20 coincides with the axis of the transmitting end.

[0077] In some embodiments, the transmitter 20 is rotatably mounted relative to the body 10 about a reference axis; and / or, the receiver 30 is rotatably mounted relative to the body 10 about a reference axis. With this configuration, the relative orientation of the transmitter 20 and the receiver 30 is adjustable, thus the angle between the signal transmission direction and the signal reception direction is adjustable. Personnel can adjust the signal transmission direction and the signal reception direction to be equal to the diffraction angle when a predetermined family of crystal planes in the crystal 300 satisfies Bragg diffraction, depending on the material of the crystal under test 300. Therefore, the crystal plane orientation instrument is suitable for crystal plane orientation of crystals made of various materials.

[0078] Preferably, the transmitter 20 and receiver 30 can each rotate independently relative to the body 10 about a reference axis. The signal transmission direction can be flexibly adjusted as the transmitter 20 rotates about the reference axis. Therefore, the angle between the signal transmission direction and the rotation axis of the crystal under test 300 can be adjusted to be equal to the Bragg angle of a predetermined homologous crystal plane of the crystal under test 300. The signal reception direction can also be flexibly adjusted as the receiver 30 rotates about the reference axis, ensuring that the receiver 30 can effectively receive the diffraction signal. (See reference...) Figure 3 and Figure 5 The crystal orientation instrument also includes a first arc-shaped guide rail 53 and a second arc-shaped guide rail 63 mounted on the base plate 11. The transmitter 20 is slidably mounted on the first arc-shaped guide rail 53, and the receiver 30 is slidably mounted on the second arc-shaped guide rail 63. The axes of the first arc-shaped guide rail 53 and the second arc-shaped guide rail 63 are the reference axes. With this configuration, the transmitter 20 can rotate independently around the reference axis by sliding along the first arc-shaped guide rail 53, and the receiver 30 can rotate independently around the reference axis by sliding along the second arc-shaped guide rail 63.

[0079] Further, see Figure 5The crystal processing equipment also includes a first drive unit and a second drive unit installed on the body 10: the first drive unit includes a first drive member 51 and a first worm gear mechanism 52 connected to the transmitter 20. The first worm gear mechanism 52 includes a first worm portion 522 connected to the output end of the first drive member 51, and a first worm wheel portion 521 slidably installed on the first arc-shaped guide rail 53. The first worm portion 522 and the first worm wheel portion 521 mesh with each other. The second drive unit includes a second drive member 61 and a second worm gear mechanism 62 connected to the receiver 30. The second worm gear mechanism 62 includes a second worm portion 622 connected to the output section of the second drive member 61, and a second worm wheel portion 621 slidably installed on the second arc-shaped guide rail 63. The second worm portion 622 and the second worm wheel portion 621 mesh with each other. The first worm gear portion 521 includes a first arc-shaped tooth row that meshes with the first worm portion 522. The first arc-shaped tooth row includes a plurality of meshing teeth arranged circumferentially along a reference axis. The second worm gear portion 621 includes a second arc-shaped tooth row that meshes with the second worm portion 622. The second arc-shaped tooth row includes a plurality of meshing teeth arranged circumferentially along a reference axis.

[0080] With this configuration, the first worm gear 521 slides precisely along the first arc-shaped guide rail 53 under the drive of the first driving member 51 and the first worm gear 522, while simultaneously achieving precise rotation around the reference axis. The second worm gear 621 slides precisely along the second arc-shaped guide rail 63 under the drive of the second driving member 61 and the second worm gear 622, while simultaneously achieving precise rotation around the reference axis. The transmitter 20 is connected to the first worm gear 521, thus enabling it to rotate around the reference axis along with the first worm gear 521. The receiver 30 is connected to the second worm gear 621, thus enabling it to rotate around the reference axis along with the second worm gear 621.

[0081] Further, see Figure 5 The first driving component 51 is a servo motor. The crystal plane orientation instrument also includes a grating ruler 54 and a scale indicator 55. The scale indicator 55 is fixedly connected to the transmitter 20 and electrically connected to the first driving component 51. The scale indicator 55 rotates around the reference axis with the transmitter 20. Therefore, the scale indicator 55 rotates relative to the grating ruler 54 and indicates the scale of the grating ruler 54 in real time. The scale of the grating ruler 54 and the position of the scale indicator 55 relative to the grating ruler 54 correspond one-to-one.

[0082] The scale indicator 55 and the servo motor are connected to achieve closed-loop control of the transmitter 20's rotation angle, ensuring that the actual rotation angle of the transmitter 20 matches the desired rotation angle. The scale indicator 55 feeds back the scale of the grating ruler 54 it indicates to the first drive unit 51. The first drive unit 51 performs a small compensation rotation based on the scale indication result fed back by the scale indicator 55 until the scale indicated by the scale indicator 55 matches the desired rotation angle of the transmitter 20.

[0083] like Figures 5-6 As shown, the first arc-shaped guide rail 53 includes a first arc-shaped segment 531 and a second arc-shaped segment 532 with the reference axis as the common axis. The second arc-shaped guide rail 63 includes a third arc-shaped segment 631 and a fourth arc-shaped segment 632 with the reference axis as the common axis. The crystal plane orientation instrument also includes a transmitter support 23 slidably connected to the first arc-shaped segment 531. The X-ray generator 21, the scale indicator 55, and the first worm gear part 521 are all fixedly mounted on the transmitter support 23. The collimator 22 and the second arc-shaped segment 532 are slidably connected. A linkage bracket is fixedly mounted on the transmitter support 23, and the linkage bracket is fixedly connected to the collimator 22. With this configuration, the first arc-shaped segment 531 bears the load of the X-ray generator 21, the scale indicator 55, the transmitter support 23, and the first worm gear part 521, while the second arc-shaped segment 532 bears the load of the collimator 22.

[0084] Further, see again Figure 5 The second driving component 61 is a servo motor. The crystal orientation instrument also includes a receiving end bracket 34 slidably connected to the third arc-shaped segment 631. The second worm gear portion 621 is fixedly mounted on the receiving end bracket 34. The receiver 30 is fixedly connected to the receiving end bracket 34 and simultaneously slidably connected to the fourth arc-shaped segment 632. The third arc-shaped segment 631 bears the load of the second worm gear portion 621 and part of the load of the receiver 30, while the fourth arc-shaped segment 632 bears the remaining load of the receiver 30.

[0085] Furthermore, the first receiving end 31 and the second receiving end 32 are symmetrically arranged about a preset central plane, which is parallel to the base plate 11 and the crystal transfer axis, and perpendicular to the reference axis. The central reference line and the signal transmission path of the transmitter 20 are both located within the preset central plane, and the signal transmission path is a straight line. The first receiving end 31 and the second receiving end 32 are movable relative to the body 10 along the extension direction of the reference axis, that is, the first receiving end 31 and the second receiving end 32 can move towards each other or away from each other along the reference axis, and the distances from the two to the preset central plane are always equal.

[0086] With this configuration, the crystal processing equipment can be adapted to the crystal plane orientation of crystals of different materials, including the crystal plane orientation of single-crystal silicon and the crystal plane orientation of silicon carbide. The orientation tester can adjust the distance from the first receiving end 31 to the preset centering plane and the distance from the second receiving end 32 to the preset centering plane according to the specific material of the crystal 300 under test, so that the distances from the two receiving ends to the preset centering plane match the orientation of the predetermined homogeneous crystal planes in the crystal 300 under test when Bragg diffraction occurs.

[0087] Furthermore, the crystal plane orientation instrument also includes a distance sensor 40. The signal transmission path of the distance sensor 40, the centering reference line, and the signal transmission path of the transmitter 20 intersect at the same point. The intersection point is the predetermined reflection point. The predetermined reflection point serves as the signal reflection point. When the receiver 30 receives the peak diffraction signal, it indicates that the signal reflection point falls on the side 220 of the unit cell of the crystal 300 under test.

[0088] Further, see Figures 3-4 A sliding pair is formed between the receiver 30 and the receiver support 34, and the two are fixed by detachable fasteners. Before crystal plane orientation, the receiver 30 and the receiver support 34 are slid relative to each other, and then the detachable fasteners are used to lock and fix them. With this configuration, the receiver 30 can slide relative to the receiver support 34 to reach the optimal receiving position. The receiver 30 receives the peak diffraction signal at the optimal receiving position. The detachable fasteners fix the receiver 30 at the optimal receiving position, which can prevent the receiver 30 from being accidentally misaligned due to interference. Specifically, one of the receiver 30 and the receiver support 34 has a guide hole 33. The detachable fastener passes through the guide hole 33 and connects the receiver 30 and the other of the receiver support 34. The guide hole 33 is a strip hole and the extension direction of the guide hole 33 is radial to the second arc-shaped guide rail 63. The detachable fastener is a bolt.

[0089] Figure 7 The unit cell of a single-crystal silicon crystal includes three types of crystal planes: type 100, type 110, and type 111. If the type 111 crystal plane is selected as the cell end face 210, then there are six type 110 crystal planes symmetrically distributed about the central normal of the cell end face 210. These six type 110 crystal planes belong to the same family of crystal planes and are therefore called predetermined family crystal planes. The actual physical axis of the single-crystal silicon crystal and the central normal of the cell end face 210 have an angle of deviation, that is, the normal of the cell end face 210 is not completely consistent with the physical axis of the crystal under test 300. By crystal plane orientation, the angle of deviation of the central normal of the cell end face 210 relative to the actual physical axis of the crystal under test 300, the tilt direction of the central normal of the cell end face 210 relative to the actual physical axis of the crystal under test 300, and the orientation of each cell side face 220 in the predetermined family of crystal planes and their respective positions relative to the crystal under test 300 can be determined.

[0090] In particular, for those with such Figure 7 For the test crystal 300 with the single-crystal silicon unit cell structure shown, when the physical axis of the test crystal 300 coincides with or is parallel to the crystal transfer axis of the crystal carrier, and the crystal placement side 12 faces the outer periphery of the test crystal 300, the 111 type crystal plane is selected as the unit cell end face 210. The six 110 type crystal planes symmetrically distributed about the central normal of the unit cell end face 210 are used as the unit cell side face 220 to be tested. These six 110 type crystal planes are collectively referred to as the predetermined homologous crystal planes.

[0091] The crystal plane orientation method of the present invention includes the following steps:

[0092] Step A: Adjust the crystal plane orientation instrument so that the angle between the signal emission direction and the signal reception direction is equal to the diffraction angle when the predetermined homogeneous crystal planes in the crystal under test 300 satisfy Bragg diffraction;

[0093] Step B: Establish a spatial rectangular coordinate system, with the predetermined reflection point as the origin. Make the X-axis parallel to the rotation axis of the crystal under test 300, the signal emission direction parallel to the XOY plane, and the angle between the signal emission direction and the X-axis equal to the Bragg angle θ of the predetermined crystal plane. B ;

[0094] Step C: The crystal under test 300 is rotated relative to the crystal plane orientation instrument around the crystal rotation axis by the crystal carrier. During this period, the diffraction signal is received by the receiver 30 and the rotation angle S is recorded. The crystal rotation axis is parallel to the X-axis and perpendicular to the reference axis. The rotation angle S is the rotation angle of the crystal under test 300 from the initial state to when the diffraction signal reaches the peak value.

[0095] Step D: Determine the crystal orientation parameters based on at least three sets of rotation strokes S. The crystal orientation parameters include the end face crystal orientation deflection angle α, the end face crystal orientation positioning angle ω, and the end face crystal orientation tilt direction angle Φ, where:

[0096] The crystal orientation deflection angle α of the end face is the angle between the crystallization axis and the crystal orientation of the end face of the unit cell;

[0097] The end face crystal orientation positioning angle ω is the angle between the end face crystal orientation projection and the reference axis of the outer circle of the unit cell;

[0098] The tilt angle Φ of the end face crystal orientation is the angle between the Z-axis and the projection of the end face crystal orientation of the crystal under test 300 when it is in the initial state.

[0099] The end face crystal orientation projection is the orthographic projection of the end face crystal orientation guide line onto the YOZ plane, and the extension direction of the end face crystal orientation guide line is the end face crystal orientation of the unit cell of the crystal under test 300.

[0100] The end face crystal orientation guide line is an imaginary straight line perpendicular to the end face 210 of the unit cell. The extension direction of the end face crystal orientation guide line is the normal of the end face 210 of the unit cell. When the end face crystal orientation guide line passes through the geometric center of the end face 210 of the unit cell, the end face crystal orientation guide line is the center normal of the end face 210 of the unit cell.

[0101] Once the cell end face 210 and cell side face 220 are selected, the outer circle reference axis can be freely chosen. Any straight line perpendicular to the center normal of the cell end face 210 can be used as the outer circle reference axis. However, it should be noted that once the outer circle reference axis is selected, it will not change during steps A, B, and C. It can be considered that the outer circle reference axis rotates synchronously with the crystal under test 300 around the crystal axis. In particular, the normal of any cell side face 220 in a predetermined family of crystal planes can be selected as the outer circle reference axis. See [reference needed]. Figure 9 , Figure 9 The straight line L is the normal to the side surface of a unit cell at 220°, and this straight line L can be used as a reference axis for the outer circle of the unit cell.

[0102] When the physical axis of the crystal under test 300 coincides with or is parallel to the crystal rotation axis of the crystal carrier, and the crystal placement side 12 faces the outer periphery of the crystal under test 300, the end face crystal orientation angle α is used to indicate the degree of deviation between the crystal orientation of the cell end face 210 and the physical axis of the crystal under test 300; the orientation of each cell side face 220 in the predetermined family crystal plane and the position of each cell side face 220 relative to the crystal under test 300 can be determined by the end face crystal orientation positioning angle ω; the tilt direction of the center normal of the cell end face 210 relative to the actual physical axis of the crystal under test can be determined by the end face crystal orientation tilt direction angle Φ.

[0103] In some embodiments, the receiver 30 includes a first receiving end 31 and a second receiving end 32, which are symmetrically arranged on both sides of the XOY plane, which is the aforementioned preset centering plane; step D includes:

[0104] The rotational travel S of the crystal under test 300 from its initial state to the point where the first receiving end 31 receives the peak diffraction signal, includes both the rotational angle of the crystal under test 300 from its initial state to the point where the second receiving end 32 receives the peak diffraction signal.

[0105] With this setup, the predetermined homogeneous crystal planes of the crystal under test 300 can be observed from two different positions through the two receiving ends of the receiver 30, thereby obtaining sufficient information about the orientation of the cell end face 210 and the predetermined homogeneous crystal planes.

[0106] In some implementations, step C includes:

[0107] The crystal rotation axis is the physical axis of the crystal under test 300;

[0108] With the YOZ plane observed and the X-axis pointing towards the observer's viewpoint, the crystal under test 300 is rotated counterclockwise relative to the crystal orientation instrument by the crystal carrier; the positive direction of the Y-axis is the rightward extension direction of the Y-axis, and the positive direction of the Z-axis is the upward extension direction of the Z-axis;

[0109] Step D includes:

[0110] Step D1: Substitute at least three sets of rotation strokes S into the crystal orientation solution to solve for the end face crystal orientation deflection angle α, the end face crystal orientation positioning angle ω, and the end face crystal orientation tilt direction angle Φ. The general formula for the crystal orientation solution is:

[0111] β is the Bragg angle θ of the predetermined family crystal plane. B The complementary angle; γ is the angle between the signal emission direction and the X-axis, and γ is equal to the Bragg angle θ of the predetermined crystal plane of the same family. B .

[0112] It is worth noting that the above crystal orientation solution formula applies to the case where the physical axis and the crystal rotation axis of the crystal under test 300 coincide, and the X-axis is parallel to the physical axis of the crystal under test 300. If the orientation of the crystal under test 300 changes, and the physical axis of the crystal under test 300 no longer coincides with the crystal rotation axis of the loading part, then the general formula of the crystal orientation solution formula changes accordingly. For single crystal silicon, a change in the orientation of the crystal under test 300 means a change in the cell end face 210 and the cell side face 220. After the orientation of the crystal under test 300 changes, the cell end face 210 is no longer a type 111 crystal plane, and the cell side face 220 is no longer a type 110 crystal plane.

[0113] Taking X-ray diffraction as an example, when the angle between the incident beam and the reflected beam is equal to the diffraction angle in Bragg diffraction, the angle between the incident beam and the reflecting crystal plane, the X-ray wavelength, the interplanar spacing, and the diffraction order satisfy Bragg's law. (See also...) Figure 8 , Figure 8 The diagram illustrates the optical path of Bragg diffraction when a unit cell side surface 220° is used as a reflecting crystal plane. If the angle between the incident and reflected beams is equal to the diffraction angle during Bragg diffraction, and the angle between the incident and reflected beams is denoted as ∠A, then 180° - ∠A = 2 × θ B θ B θ is the Bragg angle of the reflecting crystal plane. B Specifically, it is the angle between the incident beam and the reflecting crystal plane, and the angle between the reflected beam and the reflecting crystal plane is also equal to θ. B By performing step A, we ensure that the angle between the signal transmission direction and the signal reception direction remains constant during steps B and C.

[0114] The reference axis is parallel to the Z-axis, and the crystal rotation axis, which serves as the rotation axis of the crystal under test 300, is parallel to the preset center plane and the X-axis. Preferably, the crystal rotation axis coincides with the actual physical axis R1 of the crystal under test 300.

[0115] In step A, adjusting the crystal plane orientation instrument includes: driving the transmitter 20 to rotate relative to the body 10 around the reference axis; and / or driving the receiver 30 to rotate relative to the body 10 around the reference axis.

[0116] If the diffraction signal reaches its peak and is received by the receiver 30, it indicates that the predetermined reflection point falls on a certain cell side surface 220 in the predetermined family of crystal planes of the crystal under test 300, and the angle between the incident signal emitted by the transmitter 20 and the cell side surface 220, which is the reflecting crystal plane, is equal to the Bragg angle of the cell side surface 220, that is, the cell side surface 220 undergoes Bragg diffraction at this time.

[0117] Since solving for crystal orientation parameters using the crystal orientation solution requires at least three sets of rotational strokes S, at least three sets of rotational strokes must be recorded during step C. These three sets of rotational strokes are S1, S2, and S3 in the order they are achieved, i.e., S1 < S2 < S3. Each rotational stroke represents the rotation angle of the crystal under test 300 from its initial state to the moment when the diffraction signal reaches its peak. During the actual rotation of the crystal under test 300, the receiver 30 will generally receive the peak diffraction signal more than three times. If the three or more sets of rotational strokes S are substituted into the crystal orientation solution, an overdetermined system of equations is obtained.

[0118] In some implementations, step C specifically includes:

[0119] Step C1: Drive the crystal under test 300 to rotate around the crystal rotation axis using a crystal carrier until the diffraction signal of the first unit cell side surface 220 in the predetermined crystal plane reaches the peak value and is received by one of the first receiving end 31 and the second receiving end 32. Record the rotation angle S1 of the crystal under test 300 at the current moment relative to the initial state.

[0120] Step C2: Drive the crystal under test 300 to rotate around the crystal axis using the crystal carrier until the diffraction signal of the side 220 of the first unit cell reaches the peak again and is received by the other of the first receiver 31 and the second receiver 32. Record the rotation angle S2 of the crystal under test 300 at the current moment relative to the initial state.

[0121] Step C3: Drive the crystal under test 300 to rotate around the crystal rotation axis using a crystal carrier until the diffraction signal of the second unit cell side surface 220 in the predetermined crystal plane reaches the peak value and is received by the first receiver 31 or the second receiver 32. Record the rotation angle S3 of the crystal under test 300 at the current moment relative to the initial state.

[0122] The first unit cell side surface 220 and the second unit cell side surface 220 are not parallel to each other.

[0123] Figure 10 The crystal plane orientation instrument shown corresponds to the state of the first receiving end 31 receiving the peak diffraction signal. Figure 11 The crystal plane orientation instrument shown corresponds to the state of the second receiving end 32 receiving the peak diffraction signal. Figure 10 and Figure 11 The observation angle is: the observer is facing the XOZ plane, and the positive direction of the Y-axis is away from the observer.

[0124] Figure 12 , Figure 13 , Figure 14 and Figure 15 The diagram illustrates the rotation process of a single-crystal silicon crystal during crystal plane orientation. The hexagonal outline represents the predetermined homogeneous crystal planes of the single-crystal silicon unit cell. The six sides of the hexagonal outline correspond to six 110-type unit cell lateral faces 220 arranged symmetrically about the central normal of the unit cell end face 210. The six unit cell lateral faces 220 are numbered 1 to 6 in a clockwise direction. Figures 12-15 The observation angle is directly facing the YOZ plane and the positive direction of the X-axis points towards the observer.

[0125] During the counterclockwise rotation of the crystal under test 300 around a rotation axis parallel to the X-axis, the second unit cell side surface 220 first undergoes Bragg diffraction. The incident signal emitted by the emitter 20 is reflected by the second unit cell side surface 220, such as... Figure 12 As shown, the second receiving end 32 first receives the peak diffraction signal, and at this time records the rotation angle S1 of the crystal under test 300 relative to the initial state;

[0126] The crystal under test, 300, continues to rotate counterclockwise around its crystal axis, and Bragg diffraction occurs again on the side surface 220 of the second unit cell, as shown... Figure 13 As shown, the first receiving end 31 receives the peak diffraction signal, and at this time, the rotation angle S2 of the crystal under test 300 relative to the initial state is recorded;

[0127] The crystal under test 300 continues to rotate counterclockwise around the crystal axis. A Bragg diffraction occurs on the third unit cell side surface 220, which is adjacent to the second unit cell side surface 220. The incident signal emitted by the emitter 20 is reflected by the third unit cell side surface 220. Figure 14 As shown, the second receiving end 32 receives the peak diffraction signal again, and at this time, the rotation angle S3 of the crystal under test 300 relative to the initial state is recorded;

[0128] The crystal under test, 300, continues to rotate counterclockwise around its crystal axis, and Bragg diffraction occurs again on the side surface 220 of the third unit cell, as shown below. Figure 15As shown, the first receiving end 31 receives the peak diffraction signal again, and at this time, the rotation angle S4 of the crystal under test 300 relative to the initial state is recorded.

[0129] With this setup, the diffraction signals of the predetermined homologous crystal planes of the crystal under test 300 are acquired from two different positions through the two receiving ends of the receiver 30, enabling multi-angle indirect observation of the predetermined homologous crystal planes. The crystal orientation parameters are then solved using the relatively distinct and non-parallel second and third unit cell side faces 220. According to linear algebra, to solve for the crystal orientation parameters, it must be ensured that the unit cell side faces 220 corresponding to the three sets of rotational strokes S substituted into the crystal orientation solution are mutually non-parallel. For a unit cell with only four unit cell side faces that form the four sides of a cuboid, if only one receiving end is used to receive the diffraction signal, crystal plane orientation cannot be achieved, because among the three peak diffraction signals acquired by the receiver 30, two peak diffraction signals must correspond to unit cell side faces that are parallel to each other. The advantage of having two receivers is that each side of the same unit cell undergoes Bragg diffraction once in each of the two orientations, and the two diffraction signals from this side are received sequentially by the two receivers, resulting in two rotational strokes S1 and S2. Although these two rotational strokes correspond to the same unit cell side 220, this unit cell side 220 is not parallel in the two orientation states at the two Bragg diffraction times. Then, another Bragg diffraction is required from the other unit cell side 220 to obtain another rotational stroke S3. The unit cell side 220 undergoing the third Bragg diffraction is not parallel to the unit cell side 220 that underwent the first two Bragg diffractions. Thus, the unit cell sides 220 corresponding to the three peak diffraction signals are not parallel to each other, allowing the crystal orientation parameters to be solved using the crystal orientation solution formula. Therefore, the receiver 30 equipped with two receivers expands the applicability of the crystal plane orientation method, making it suitable for crystal plane orientation of crystals of different materials.

[0130] Returning to steps C1, C2, and C3 above, the first and second unit cell side faces 220 are two adjacent crystal planes with an included angle of 60° in a predetermined family of crystal planes (type 110 crystal planes). Although the two peak diffraction signals collected in steps C1 and C2 both correspond to the second unit cell side face 220, S1 ≠ S2. The orientation of the second unit cell side face 220 during the two Bragg diffractions is different. The peak diffraction signal collected in step C3 corresponds to the third unit cell side face 220. Therefore, the three rotation paths obtained in steps C1, C2, and C3 can meet the needs of solving the crystal orientation parameters.

[0131] Furthermore, the crystal orientation solution includes a first calculation formula and a second calculation formula.

[0132] The first calculation formula for solving the crystal orientation problem is:

[0133] ;

[0134] The second calculation formula for the crystal orientation solution is:

[0135] ;

[0136] Step D1 includes:

[0137] Step D11: Substitute the turning stroke S1 into the first calculation formula to obtain the first solution equation;

[0138] Step D12: Substitute the turning angle travel S2 into the first calculation formula to obtain the second solution equation;

[0139] Step D13: Substitute the turning stroke S3 into the second calculation formula to obtain the third solution equation;

[0140] The first equation to be solved is:

[0141] ;

[0142] The second equation to be solved is:

[0143] ;

[0144] The third equation to be solved is:

[0145] ;

[0146] Solving the first, second, and third equations simultaneously yields the end face crystal orientation deflection angle α, the end face crystal orientation positioning angle ω, and the end face crystal orientation tilt direction angle Φ.

[0147] m is the angle between the crystal orientations of any two adjacent crystal planes in the predetermined family of crystal planes, and n is the difference in position index between the first unit cell side face 220 and the second unit cell side face 220. If the center normal of the unit cell end face 210 is taken as the end face crystal orientation guide line, then the predetermined family of crystal planes are symmetrical about the end face crystal orientation guide line. When the crystal plane orientation method is used to determine the crystal orientation of single crystal silicon, m is 60°; when the crystal plane orientation method is used to determine the crystal orientation of single crystal silicon, m is 90°. When the first unit cell side face 220 is... Figures 12-15 The second unit cell side surface 220 and the second unit cell side surface 220 are Figures 12-15 When the third unit cell side surface 220 is in the diagram, the value of n is 1; assuming the first unit cell side surface 220 is... Figures 12-15 The second unit cell side surface 220 and the second unit cell side surface 220 are Figures 12-15 When the fourth unit cell side surface 220 is in the first unit cell, the value of n is 2; assuming the first unit cell side surface 220 is... Figures 12-15 The second unit cell side surface 220 and the second unit cell side surface 220 are Figures 12-15When the side surface of the 6th unit cell is 220, the value of n is 4, and so on.

[0148] However, it should be noted that since the first and second unit cell side faces 220 cannot be parallel to each other, the difference in position numbers between the first and second unit cell side faces 220 is not equal to 180° / m. Otherwise, the rotation distances S1, S2, and S3 recorded in this way cannot be used to determine crystal orientation parameters. For example, if rotation distances S1 and S2 correspond to the second unit cell side face 220, then the rotation distance when the fifth unit cell side face 220 reflects the peak diffraction signal cannot be taken as rotation distance S3. Figures 12-15 Please provide a detailed explanation:

[0149] When the peak diffraction signal is reflected from the side surface 220 of the 5th unit cell and received by the second receiver 32, the position of the side surface 220 of the 5th unit cell is... Figure 12 The position of the second unit cell side surface shown coincides with the position of the side surface shown; when the fifth unit cell side surface 220 reflects the peak diffraction signal and the peak diffraction signal is received by the first receiving end 31, the position of the fifth unit cell side surface 220 at this time coincides with the position of the side surface shown with ... Figure 13 The positions of the side surfaces of the second unit cell shown coincide.

[0150] When calculating crystal orientation parameters, there is a possibility that the rotation stroke S1 is substituted into the first calculation formula, while the rotation strokes S2 and S3 are substituted into the second calculation formula. If the crystal orientation parameters are calculated using this substitution method, the correct solution cannot be obtained. To verify the accuracy of the calculation results, step C3 includes:

[0151] Step C31: Drive the crystal under test 300 to rotate around the crystal rotation axis using a crystal carrier until the diffraction signal of the second unit cell side surface 220 in the predetermined crystal plane reaches the peak value and is received by one of the first receiving end 31 and the second receiving end 32. Record the rotation angle S3 of the crystal under test 300 at the current moment relative to the initial state.

[0152] Step C32: Drive the crystal under test 300 to rotate around the crystal axis using the crystal carrier until the diffraction signal of the second unit cell side 220 reaches the peak value again and is received by the other of the first receiver 31 and the second receiver 32. Record the rotation angle S4 of the crystal under test 300 at the current moment relative to the initial state.

[0153] Step D1 further includes:

[0154] Step D14: Substitute the turning distance S4 into the second calculation formula to obtain the fourth solution equation. The fourth solution equation is written as:

[0155] ;

[0156] If the fourth equation holds true, then the results for the end face crystal orientation deflection angle α, the end face crystal orientation positioning angle ω, and the end face crystal orientation tilt direction angle Φ are correct.

[0157] With this setup, after substituting the rotation stroke S4 into the second calculation formula, the calculation can be verified by checking whether the fourth solution equation holds true, ensuring the accuracy of the calculated results for the end face crystal orientation angle α, the end face crystal orientation positioning angle ω, and the end face crystal orientation tilt direction angle Φ. If the end face crystal orientation angle α, the end face crystal orientation positioning angle ω, and the end face crystal orientation tilt direction angle Φ are uniquely calculated based on the first, second, third, and fourth solution equations, then the crystal orientation parameter calculation results are correct.

[0158] It should be noted that the relative positional relationship of the unit cell side surfaces 220 corresponding to three consecutive Bragg diffractions can be determined based on the differences between multiple rotational strokes S. For example, when the same unit cell side surface 220 undergoes Bragg diffraction twice, the difference in rotational strokes corresponding to these two Bragg diffractions is ΔS1, for example... Figure 13 The angular travel S2 and the state shown Figure 12 In the state shown, the rotation distance S1 has ΔS1 equal to S2-S1; when Bragg diffraction occurs on the two different side faces 220 of the unit cell, the difference in rotation distance corresponding to these two Bragg diffractions is ΔS2, for example. Figure 14 The angular travel S3 and the state shown Figure 13 Given the angular travel S2 in the indicated state, ΔS2 equals S3-S2, and ΔS2 > ΔS1. Therefore, during three consecutive Bragg diffraction events, if the difference between the two earlier angular travels is small, while the difference between the other later angular travel and the first two is large, then the two earlier angular travels correspond to the same unit cell side surface 220. Thus, these two earlier angular travels are substituted into the first calculation formula. The other later angular travel corresponds to another unit cell side surface 220, so the later angular travel is substituted into the second calculation formula.

[0159] The technical features of the above-described embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0160] Those skilled in the art should recognize that the above embodiments are merely illustrative of the present invention and are not intended to limit the present invention. Any appropriate changes and variations made to the above embodiments within the essential spirit of the present invention fall within the scope of protection claimed by the present invention.

Claims

1. A crystal plane orientation method, the method being based on a crystal plane orientation instrument, characterized in that, The crystal orientation instrument includes a transmitter (20) and a receiver (30) with predetermined reflection points. The receiver (30) includes a first receiving end (31) and a second receiving end (32). The signal transmission path of the transmitter (20) intersects the predetermined reflection point with a preset centering reference line. The preset centering reference line, the axis of the first receiving end (31), and the axis of the second receiving end (32) are coplanar. Moreover, the distance from the preset centering reference line to the axis of the first receiving end (31) is equal to the distance from the preset centering reference line to the axis of the second receiving end (32). The transmitter (20) and the receiver (30) are respectively arranged along different radial directions of the preset reference axis. The crystal plane orientation method includes: Step A: Adjust the crystal plane orientation instrument so that the angle between the signal emission direction and the signal reception direction is equal to the diffraction angle when the predetermined homogeneous crystal planes in the crystal under test (300) satisfy Bragg diffraction; Step B: Establish a spatial rectangular coordinate system, with the predetermined reflection point as the origin. Let the X-axis be parallel to the crystal rotation axis of the crystal under test (300), let the signal emission direction be parallel to the XOY plane, and let the angle between the signal emission direction and the X-axis be equal to the Bragg angle θ of the predetermined crystal plane of the same family. B The crystal rotation axis is the physical axis of the crystal under test (300); Step C: Drive the crystal under test (300) to rotate around the crystal rotation axis. During this period, the diffraction signal is received by the receiver (30) and the rotation angle S is recorded. The crystal rotation axis is parallel to the X-axis and perpendicular to the reference axis. The rotation angle is the rotation angle of the crystal under test (300) from the initial state to when the diffraction signal reaches the peak. Step D: Substitute at least three sets of rotation strokes S into the crystal orientation solution to solve for the end face crystal orientation deflection angle α, the end face crystal orientation positioning angle ω, and the end face crystal orientation tilt direction angle Φ. The general formula for the crystal orientation solution is: β is the Bragg angle θ of the predetermined family crystal plane. B The complementary angle; γ is the angle between the signal emission direction and the X-axis, and γ is equal to the Bragg angle θ of the predetermined crystal plane of the same family. B ; The end-face crystal orientation angle α is the angle between the crystallization axis and the end-face crystal orientation of the unit cell; the end-face crystal orientation positioning angle ω is the angle between the projection of the end-face crystal orientation and the reference axis of the outer circle of the unit cell; and the end-face crystal orientation tilt angle Φ is the angle between the Z-axis and the projection of the end-face crystal orientation of the crystal under test (30°) when it is in the initial state. The end face crystal orientation projection is the orthographic projection of the end face crystal orientation guide line on the YOZ plane, and the extension direction of the end face crystal orientation guide line is the end face crystal orientation of the unit cell of the crystal under test (300).

2. The crystal plane orientation method as described in claim 1, characterized in that, The first receiving end (31) and the second receiving end (32) are symmetrically arranged on both sides of the XOY plane, and step D includes: The at least three sets of rotational travel S include both the rotation angle of the crystal under test (300) from the initial state to the first receiving end (31) receiving the peak diffraction signal and the rotation angle of the crystal under test (300) from the initial state to the second receiving end (32) receiving the peak diffraction signal.

3. The crystal plane orientation method as described in claim 2, characterized in that, Step C includes: When observing the YOZ plane with the X-axis pointing towards the observer's viewpoint, the crystal under test (300) is rotated counterclockwise relative to the crystal plane orientation instrument by the crystal carrier; the positive direction of the Y-axis is the rightward extension direction of the Y-axis, and the positive direction of the Z-axis is the upward extension direction of the Z-axis.

4. The crystal plane orientation method as described in claim 3, characterized in that, Step C includes: Step C1: Drive the crystal under test (300) to rotate around the crystal rotation axis until the diffraction signal on the side of the first unit cell in the predetermined crystal plane reaches the peak value and is received by one of the first receiving end (31) and the second receiving end (32). Record the rotation angle S1 of the crystal under test (300) at the current moment relative to the initial state. Step C2: Drive the crystal under test (300) to rotate around the crystal rotation axis until the diffraction signal on the side of the first unit cell reaches the peak again and is received by the other of the first receiver (31) and the second receiver (32). Record the rotation angle S2 of the crystal under test (300) relative to the initial state at the current moment. Step C3: Drive the crystal under test (300) to rotate around the crystal rotation axis until the diffraction signal on the side of the second unit cell in the predetermined crystal plane reaches the peak value and is received by the first receiving end (31) or the second receiving end (32). Record the rotation angle S3 of the crystal under test (300) at the current moment relative to the initial state. In this case, the side surfaces of the first unit cell and the side surfaces of the second unit cell are not parallel to each other.

5. The crystal plane orientation method as described in claim 4, characterized in that, The crystal orientation solution includes a first calculation formula and a second calculation formula. The first calculation formula for solving the crystal orientation problem is: ； The second calculation formula for the crystal orientation solution is: ； Step D includes: Step D11: Substitute the turning stroke S1 into the first calculation formula to obtain the first solution equation; Step D12: Substitute the turning angle travel S2 into the first calculation formula to obtain the second solution equation; Step D13: Substitute the turning stroke S3 into the second calculation formula to obtain the third solution equation; Solving the first, second, and third equations simultaneously yields the end face crystal orientation deflection angle α, the end face crystal orientation positioning angle ω, and the end face crystal orientation tilt direction angle Φ. m is the angle between the crystal orientations of any two adjacent crystal planes in the predetermined family of crystal planes, and n is the difference in position number between the first cell side surface and the second cell side surface. The difference in position number between the first cell side surface and the second cell side surface is not equal to 180° / m.

6. The crystal plane orientation method as described in claim 5, characterized in that, Step C3 includes: Step C31: Drive the crystal under test (300) to rotate around the crystal rotation axis until the diffraction signal on the side of the second unit cell in the predetermined crystal plane reaches the peak value and is received by one of the first receiving end (31) and the second receiving end (32). Record the rotation angle S3 of the crystal under test (300) at the current moment relative to the initial state. Step C32: Drive the crystal under test (300) to rotate around the crystal rotation axis until the diffraction signal on the side of the second unit cell reaches the peak again and is received by the other of the first receiver (31) and the second receiver (32). Record the rotation angle S4 of the crystal under test (300) at the current moment relative to the initial state. Step D further includes: Step D14: Substitute the turning stroke S4 into the second calculation formula to obtain the fourth solution equation; If the fourth equation holds true, then the results for the end face crystal orientation deflection angle α, the end face crystal orientation positioning angle ω, and the end face crystal orientation tilt direction angle Φ are correct.

7. The crystal plane orientation method as described in claim 5, characterized in that, The crystal orientation method can be used to determine the crystal orientation of single-crystal silicon, wherein the predetermined homogeneous crystal planes include six unit cell lateral faces symmetrically arranged about the end face crystal orientation guide line, and m is 60°.

8. A crystal plane orientation instrument, characterized in that, The crystal plane orientation instrument performs a crystal plane orientation method, which includes: Step A: Adjust the crystal plane orientation instrument so that the angle between the signal emission direction and the signal reception direction is equal to the diffraction angle when the predetermined homogeneous crystal planes in the crystal under test (300) satisfy Bragg diffraction; Step B: Establish a spatial rectangular coordinate system, with the predetermined reflection point as the origin. Let the X-axis be parallel to the crystal rotation axis of the crystal under test (300), let the signal emission direction be parallel to the XOY plane, and let the angle between the signal emission direction and the X-axis be equal to the Bragg angle θ of the predetermined crystal plane of the same family. B The crystal rotation axis is the physical axis of the crystal under test (300); Step C: Drive the crystal under test (300) to rotate around the crystal rotation axis. During this period, the diffraction signal is received by the receiver (30) and the rotation angle S is recorded. The crystal rotation axis is parallel to the X-axis and perpendicular to the reference axis. The rotation angle is the rotation angle of the crystal under test (300) from the initial state to when the diffraction signal reaches the peak. Step D: Substitute at least three sets of rotation strokes S into the crystal orientation solution to solve for the end face crystal orientation deflection angle α, the end face crystal orientation positioning angle ω, and the end face crystal orientation tilt direction angle Φ. The general formula for the crystal orientation solution is: β is the Bragg angle θ of the predetermined family crystal plane. B The complementary angle; γ is the angle between the signal emission direction and the X-axis, and γ is equal to the Bragg angle θ of the predetermined crystal plane of the same family. B ; The end-face crystal orientation angle α is the angle between the crystallization axis and the end-face crystal orientation of the unit cell; the end-face crystal orientation positioning angle ω is the angle between the projection of the end-face crystal orientation and the reference axis of the outer circle of the unit cell; and the end-face crystal orientation tilt angle Φ is the angle between the Z-axis and the projection of the end-face crystal orientation of the crystal under test (30°) when it is in the initial state. The end face crystal orientation projection is the orthographic projection of the end face crystal orientation guide line on the YOZ plane, and the extension direction of the end face crystal orientation guide line is the end face crystal orientation of the unit cell of the crystal under test (300). The crystal orientation instrument includes a body (10), a transmitter (20) and a receiver (30). The body (10) includes a crystal placement side (12). The transmitter (20) and the receiver (30) are respectively tilted relative to the crystal placement side (12) along different radial directions of a preset reference axis. The receiver (30) includes a first receiving end (31) and a second receiving end (32). The signal transmission path of the transmitter (20) intersects the preset centering reference line at the predetermined reflection point. The preset centering reference line, the axis of the first receiving end (31), and the axis of the second receiving end (32) are coplanar. Moreover, the distance from the preset centering reference line to the axis of the first receiving end (31) is equal to the distance from the preset centering reference line to the axis of the second receiving end (32).

9. The crystal plane orientation instrument as described in claim 8, characterized in that, The first receiving end (31) and the second receiving end (32) are symmetrical about the XOY plane, which is parallel to the signal transmission direction of the transmitter (20).

10. A crystal processing device, characterized in that, It includes a crystal carrier, a crystal processing apparatus, and a crystal plane orientation instrument as described in claim 8 or claim 9.

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