A three-dimensional integrated dual-path modulation radio frequency front-end chip, device and equipment
By using a three-dimensional integrated RF front-end chip design, the power amplifier switch chip, low-noise amplifier chip, and switch driver chip are vertically stacked and interconnected using a specific process, which solves the problem of large size in RF front-end integration and achieves miniaturization and efficient signal transmission.
CN120811410BActive Publication Date: 2026-04-17THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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Patent Information
- Application Number
- CN202511055732.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-30
- Publication Date
- 2026-04-17
- Estimated Expiration
- 2045-07-30
AI Technical Summary
Technical Problem
Existing RF front-end integration methods are bulky and cannot meet the miniaturization requirements of electronic systems.
Method used
Using a three-dimensional integration approach, the power amplifier switch chip, low-noise amplifier chip, and switch driver chip are vertically stacked from bottom to top, and tight connections between the chips are achieved through specific interconnection and assembly processes, such as gold-to-gold ball stacking and hot-via technology.
Benefits of technology
It effectively reduces the area occupied on the plane, optimizes the connection space between chips, shrinks the overall size, and improves signal transmission efficiency and performance consistency.
✦ Generated by Eureka AI based on patent content.
Abstract
The application provides a three-dimensional integrated dual-path modulation radio frequency front-end chip, device and equipment, and relates to the technical field of radio frequency front-end integration. The chip comprises: a first layer, a second layer and a third layer stacked vertically from bottom to top; the first layer comprises a power amplifier switch chip; the second layer comprises a low-noise amplifier chip; the low-noise amplifier chip is interconnected with a transceiver switch in the power amplifier switch chip through a bonding process; the low-noise amplifier chip and the power amplifier chip are assembled together through gold-gold ball planting stacking and realize radio frequency signal transmission through hot-via; the third layer comprises a switch driver chip; the switch driver chip is adhered to the top of the low-noise amplifier chip through insulating glue. The application effectively solves the problem of large volume of the existing radio frequency front-end integration mode through the chip stacking and interconnection mode.
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