Electronic component having shunt between first terminal and second terminal

Abstract

An electronic component includes a plurality of power semiconductor dies, a first terminal, a second terminal spaced apart from the first terminal, and a shunt. The power semiconductor die is attached to a substrate. The shunt has a first side attached to the first terminal and a second side opposite the first side. The electronic component includes a first connection between the first contact pad of each power semiconductor die and the second side of the shunt, and a second connection between the second terminal and the second side of the shunt. The shunt has a higher specific resistance than the first connector. The resistance of the shunt varies by less than 10% over a normal operating temperature range of the electronic component.

Description

Background Art

[0001] The demand for electronic components for power applications continues to increase rapidly in many industries, including automotive, consumer electronics, renewable energy, manufacturing, and medical. Advances in semiconductor materials, such as silicon carbide (SiC), silicon (Si), and gallium nitride (GaN), have enabled power electronic components to have advantageous features, such as a smaller footprint, higher voltage and current capabilities, and faster switching speeds.

[0002] Many applications of power electronics require accurate and fast current measurement during operation. For example, power distribution applications for autonomous vehicles may require accurate current sensing for safety features such as power steering and electromechanical braking. These safety features can include detecting faults such as short circuits, disconnecting devices in affected circuit areas, and shunt current-consuming devices. Motor drives such as brushless motor inverters may also require current sensing capabilities.

[0003] The current sensing function in such applications is typically implemented on the circuit board using separate components. These components typically include shunt resistors or magnetic sensors (Hall or GMR / TMR), which are expensive and consume board space. Some power electronic components include integrated current sensors such as magnetic sensors, but these integrated current sensors typically require at least two additional pins for connection and may therefore exceed the space constraints of some applications. Finally, the current measurement unit can be integrated into the chip, however with this approach there is usually a trade-off between control and accuracy, size, and cost.

[0004] Therefore, there is a need for a cost-effective solution that enables accurate current measurement in power electronic components with low space requirements. Summary of the Invention

[0005] According to an embodiment of a molded electronic component, the molded electronic component includes: a power semiconductor die, which is at least partially embedded in a molding compound; a load terminal, which is partially embedded in the molding compound; a sensing terminal, which is separated from the load terminal and partially embedded in the molding compound; a shunt, which has a first side attached to the load terminal; a first connector, which is located between a first contact pad of the power semiconductor die and a second side of the shunt opposite to the first side; and a second connector, which is located between the sensing terminal and the second side of the shunt, wherein the shunt has a higher specific resistance than the first connector, and wherein the resistance of the shunt varies by less than 10% within a normal operating temperature range of the molded electronic component.

[0006] According to an embodiment of the electronic component, the electronic component includes: a plurality of power semiconductor dies attached to a substrate; a first terminal; a second terminal, the second terminal being separated from the first terminal; a shunt, the shunt having a first side attached to the first terminal and a second side opposite to the first side; a first connector, the first connector being located between a first contact pad of each power semiconductor die in the power semiconductor dies and the second side of the shunt; and a second connector, the second connector being located between the second terminal and the second side of the shunt, wherein the shunt has a higher specific resistance than the first connector, and wherein the resistance of the shunt varies by less than 10% within the normal operating temperature range of the electronic component.

[0007] Those skilled in the art will recognize additional features and advantages upon reading the following detailed description, and upon viewing the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] The elements of the drawings are not necessarily drawn to scale relative to each other. Like reference numerals denote corresponding similar parts. The features of the various illustrated embodiments may be combined unless they exclude each other. The embodiments are depicted in the drawings and described in detail in the following description.

[0009] Figure 1 A perspective view of a molded electronic component according to an embodiment is shown.

[0010] Figure 2A and Figure 2B A perspective view illustrating a shunt of a molded electronic component according to an embodiment.

[0011] Figure 3 A perspective view of a molded electronic component according to an embodiment is shown.

[0012] Figure 4 A perspective view of a molded electronic component according to an embodiment is shown.

[0013] Figures 5A-5C A perspective view of a molded electronic component according to an embodiment is shown.

[0014] Figures 6A-6B A partial plan view of an electronic component according to an embodiment is shown. DETAILED DESCRIPTION

[0015] A molded electronic component with an integrated current sensor is described herein, which is implemented by including a shunt located between a load terminal and a sense terminal of the molded electronic component. Specifically, a first side of the shunt is attached to the load terminal, and a first connector (e.g., a clamp, one or more bond wires, or a metal ribbon) connects a contact pad of a power semiconductor die included in the molded electronic component to an opposite second side of the shunt. The shunt has a higher specific resistance (also known as resistivity) than the first connector, in some examples at least 10 times higher than the specific resistance of the first connector, and thus most of the voltage drop between the contact pad of the power semiconductor die and the load terminal occurs across the shunt. In addition, the resistance of the shunt has a low variation with temperature (e.g., less than 10% or even less than 5% over the normal operating temperature range of the molded electronic component). Thus, the electrical potential at the second side of the shunt to which the first connector is attached can be similar (e.g., vary by less than 10% or even less than 5%) to the electrical potential at the contact pad of the power semiconductor die within the operating range of the molded electronic component, and measuring the electrical potential at the second side of the shunt can provide a relatively accurate measurement of the current at the contact pad.

[0016] To achieve this measurement, a sensing terminal of the molded electronic component is connected to the second side of the shunt using a second connection (e.g., a clamp, one or more bond wires, or a metal ribbon). The potential of the second side of the shunt can be measured at the sensing terminal, and thus a relatively accurate current measurement can be provided. Integrating a current sensor into a molded electronic component in this way can be simpler, cheaper, and / or require less space (e.g., by requiring only a single additional terminal) than other solutions for integrating a current sensor into a molded electronic component or electronic circuit.

[0017] Described next with reference to the accompanying drawings are exemplary embodiments of a molded electronic component having a shunt that enables a more accurate, space-efficient, and / or cost-effective implementation of an integrated current sensor.

[0018] Figure 1A perspective view of a molded electronic component 100 according to an embodiment is shown. The molded electronic component 100 is shown as a surface mount device (SMD), but may alternatively be a through-hole device or another type of molded electronic component. The molded electronic component 100 includes a power semiconductor die 110. The power semiconductor die 110 includes one or more devices, for example, one or more transistors, diodes, resistors, capacitors, and / or other types of active or passive devices. In some examples, the power semiconductor die 110 may be a power transistor die, for example, a power MOSFET (metal oxide semiconductor field effect transistor) die. In other examples, the power semiconductor die 110 may be a HEMT (high electron mobility transistor) die, an IGBT (insulated gate bipolar transistor) die, a JFET (junction field effect transistor) die, or the like. The semiconductor material of the power semiconductor die 110 may be SiC, GaN, Si, or the like. Although in Figure 1 A single power semiconductor die 110 is shown in the example of FIG, but the molded electronic component 100 may include two or more power semiconductor dies 110 .

[0019] exist Figure 1 In the example of FIG. 1 , the power semiconductor die 110 is a vertical power semiconductor die (e.g., a vertical power transistor die) having a first contact pad 111 and a second contact pad 112 on opposite sides of the power semiconductor die 110. The second contact pad 112 of this example is attached to a lead frame 130 (e.g., a copper or aluminum lead frame). For a vertical power transistor die, the main current flow path is between the front side and the back side of the power semiconductor die 110 (along the Figure 1 However, this is merely an example, and other types of devices and arrangements of the power semiconductor die 110 are contemplated (eg, lateral or planar power MOSFETs).

[0020] The molded electronic component 100 includes a load terminal 131 and a sense terminal 132. The load terminal 131 and the sense terminal 132 are physically separated from each other. The load terminal 131 and the sense terminal 132 can each be formed of a sheet, plate or other body of metal or metal alloy (e.g., copper, aluminum, etc.). The load terminal 131 and the sense terminal 132 can, for example, be sections that have been separated from the lead frame 130 during the manufacture of the molded electronic component 100. Alternatively, the lead frame 130, the load terminal 131 and / or the sense terminal 132 can be sections of a substrate (e.g., a printed circuit board (PCB), a DCB (direct copper bonding) or AMB (active metal brazing) substrate, an insulated metal substrate (IMS), etc.). A third terminal 133, which is separated from the load terminal 131 and the sense terminal 132, is also provided on the lead frame 130. Figure 11 , although this is not a requirement for molded electronic component 100. Third terminal 133 may be, for example, a control terminal (e.g., a gate terminal) of a MOSFET of power semiconductor die 110. In this example, third terminal 133 is electrically connected to power semiconductor die 110 via elongated electrical conductor 171 (e.g., a bond wire or metal ribbon). Molded electronic component 100 may include one or more additional terminals (not shown).

[0021] The power semiconductor die 110, the load terminal 131, the sense terminal 132, and each of the lead frame 130 and the third terminal 133 in this example are at least partially embedded in the molding compound 120. The molding compound is a plastic encapsulant typically formed of an organic resin such as an epoxy resin. The plastic encapsulant may include fillers such as non-melting inorganic materials. Catalysts may be used to accelerate the curing reaction of the organic resin. Other materials such as flame retardants, adhesion promoters, ion traps, stress release agents, colorants, etc. may be appropriately added to the plastic encapsulant. The molding compound may be formed by injection molding, compression molding, film assisted molding (FAM), reaction injection molding (RIM), resin transfer molding (RTM), blow molding, etc.

[0022] In the example of molded electronic component 100, load terminal 131 provides electrical access to first contact pad 111 of power semiconductor die 110. First contact pad 111 and load terminal 131 are electrically connected through first connector 141 and shunt 150. Specifically, first side 150 of shunt 150 is electrically connected to first contact pad 111 of power semiconductor die 110. S1 Attached to the load terminal 131. The first side 150 of the shunt 150 S1 The first connector 141 is connected to the load terminal 131 by soldering, diffusion soldering, sintering, gluing or welding. S1 The opposite second side 150 S2 In some examples, the first connector 141 may be welded, diffusion welded, sintered, glued, or fused to the second side 150 of the diverter 150. S2 The second connector 142 of the molded electronic component 100 is formed between the sensing terminal 132 and the second side 150 of the shunt 150. S2 between.

[0023] The first connector 141 and the second connector 142 of the molded electronic component 100 are formed by Figure 1 The metal body 160 can be, for example, Figure 1 The metal clip shown (eg, copper, aluminum). The first connector 141 includes a horizontal section 160 of a metal body 160. H, which is disposed above the power semiconductor die 110 and attached to the first contact pad 111 of the power semiconductor die 110. In this example, the vertical bridging section 160 of the metal body 160 V The horizontal section 160 H Connected to the second side 150 of the diverter 150 S2 . Vertical bridging section 160 V The second side 150 of the shunt 150 may be welded, diffusion welded, sintered, glued or fused, for example. S2 It is conceivable that the horizontal section 160 H Extends and is directly connected to the second side 150 of the diverter 150 S2 In some examples, the horizontal segment 160 H May include a replacement for the vertical bridging section 160 V The second connector 142 includes a lateral bridge section 160 of the metal body 160. L , which connects the sense terminal 132 to the second side 150 of the shunt 150 S2 .

[0024] The shunt 150 includes a layer or layer stack 151 of a shunt material (e.g., a foil, a tape, such as a rolled foil). In some examples, the shunt material is an alloy comprising copper and nickel. The shunt material can be, for example, a copper-nickel alloy or a copper-nickel-manganese alloy. The layer or layer stack 151 of the shunt material can have a thickness of from about 20 microns to a maximum of 250 microns or greater (e.g., from 20 to 100 microns for low voltage molded electronic components 100). In some examples, the layer or layer stack 151 of the shunt material has a thickness of a maximum of 700 microns (e.g., for high voltage molded electronic components 100). The load terminal 131 and / or the first connector 141 can be directly attached to the layer or layer stack 151 of the shunt material, or can be attached to another portion of the shunt 150 (e.g., a current spreader, a solder stop, a corrosion protector).

[0025] According to an embodiment, the shunt 150 has a higher specific resistance than the first connector 141. For example, the specific resistance of the shunt 150 can be at least 8 times higher than the specific resistance of the first connector 141. In some examples, the specific resistance of the shunt 150 is at least 10 times higher than the specific resistance of the first connector 141. The resistance of the shunt 150 varies by less than 10% within the normal operating temperature range of the molded electronic component 100. In some examples, the resistance of the shunt 150 varies by less than 5% within the normal operating temperature range of the molded electronic component 100, for example, as low as 2%. The normal operating temperature range of the molded electronic component 100 can be, for example, from about -40°C to about 175°C (for example, for automotive applications) or from about -25°C to about 150°C (for example, for industrial applications). In some examples, up to 10% of the total product resistance of the molded electronic component 100 can be attributed to the shunt 150.

[0026] To ensure that the total module resistance does not exceed the target maximum value, the first connector 141 is made of a material with a relatively low specific resistivity (e.g., copper or aluminum). However, metals or metal alloys primarily comprising copper or aluminum have a specific resistivity that is strongly temperature-dependent. Without the shunt 150, the voltage drop between the first contact pad 111 of the power semiconductor die 110 and the load terminal 131 is distributed entirely across the first connector 141 (in this example, the metal body 160). In addition, without the shunt 150 in the path, the voltage drop is strongly temperature-dependent, thereby reducing the current sensing accuracy.

[0027] By including a shunt 150 in the electrical path between the first contact pad 111 of the power semiconductor die 110 and the load terminal 131, the shunt 150 having a relatively high specific resistance and low specific resistance variability (e.g., less than 10%, less than 5%, or even as low as 2% over the component operating temperature range) relative to the first connection 141, the majority of the voltage drop between the first contact pad 111 and the load terminal 131 occurs across the shunt 150. Thus, with the shunt 150 provided and arranged as shown, the voltage drop across the shunt 150 is relatively temperature-independent (e.g., varies by less than 10%, less than 5%, or even as low as 2% over the component operating temperature range), which ensures accurate current sensing.

[0028] The sensing terminal 132 is connected to the second side 150 of the shunt 150 using the second connector 142. S2 The second side 150 of the diverter 150 is S2Measurement of the potential at the first contact pad 111 of the power semiconductor die 110 can be performed at the sense terminal 132 with negligible current flowing through the second connection 142, conceivably providing a relatively temperature-independent measurement of the potential and current at the first contact pad 111 of the power semiconductor die 110 at the sense terminal 132. The low variation in the specific resistance of the shunt 150 with temperature can ensure that the portion of the voltage drop between the first contact pad 111 of the power semiconductor die 110 and the load terminal 131 occurring across the shunt 150 remains relatively constant across the normal operating temperature range of the molded electronic component 100, potentially increasing the accuracy of the current measurement performed at the sense terminal 132. Integrating the current sensing functionality into the molded electronic component 100 in this manner may be more accurate, less expensive to implement, and / or may require less space than other approaches for measuring current in a power semiconductor die during operation of a conventional power electronic component.

[0029] exist Figure 1 In the embodiment, the metal body 160 included in the molded electronic component 100 has a gap 160 g , the gap is in the transverse bridging section 160 L The transverse bridging section 160 of the metal body 160 is formed on at least a portion of the length L L The horizontal section 160 of the metal body 160 H Separated. Gap 160 g The current can be forced to flow in more directions through the first connector 141 (for example, Figure 1 in the x and z directions), thereby reducing lateral current flow near the sense terminal 132 (e.g., in Figure 1 In the y direction). By including a gap 160 in the metal body 160 g Reducing the lateral current flow near the sense terminal 132 reduces the voltage drop at the sense terminal 132, which enables more accurate current sensing measurements. g Extending to horizontal section 160 H and / or vertical bridging section 160 V The example includes a gap of 160 g Extends only to the horizontal section 160 H or only extends to the vertical bridging section 160 V Examples in .

[0030] Figure 2A and Figure 2B A perspective view is shown of a shunt 150 included in a molded electronic component 100 according to an embodiment.

[0031] exist Figure 2A In the example, the first side 150 of the diverter 150 S1 and the second side 150S2 Each includes an end layer or layer stack 152 adjacent to a layer or layer stack of shunt material 151. Each end layer or layer stack 152 includes a conductive material different from the shunt material. Example materials for each end layer or layer stack 152 include Cu, Ag, Ni, Sn, and various alloys. Each end layer or layer stack 152 can be a current spreader, a corrosion protector, and / or can serve a different function, such as solder wetting. Each end layer or layer stack 152 can cover the first side 150 of the shunt 150. S1 or second side 150 S2 For example, the corresponding end layer or layer stack 152 can include partial coverage (e.g., by electroplating) of a material (e.g., Ag) on ​​the shunt 150 to define a solder area. In some examples, the corresponding end layer or layer stack 152 can further or alternatively include partial coverage of a solder stop or resist on the shunt 150 to define a non-solder area.

[0032] although Figure 2A The example shows that the first side 150 of the diverter 150 S1 and the second side 150 S2 The end layer or layer stack 152 on both sides, but it is conceivable that only the first side 150 S1 or second side 150 S2 Examples of end layers or layer stacks 152 are included. In some examples, the first side 150 S1 The end layer or layer stack 152 on the second side 150 S2 The end layer or layer stack 152 on the first side 150 includes the same material, has the same function, has the same or similar properties (eg, thickness), etc. In some examples, the first side 150 S1 The end layer or layer stack 152 on the second side 150 S2 The upper end layer or layer stack 152 comprises different materials, has different functions, has different properties (eg, thickness), and the like.

[0033] Figure 2B The diverter 150 in the example includes a side wall 150 of the diverter 150 SW The electrically insulating material 153 on the shunt 150 can be an oxide or nitride, a polymer coating or other electrically insulating material. Although this example shows all sidewalls 150 of the shunt 150 SW However, it is conceivable that the electrically insulating material 153 covers the sidewalls 150. SW An example of one or some of the .

[0034] Figure 2BThe second side 150 of the diverter 150 S2 A solder stop 154 ​​is included that contains solder within an area defined by the solder stop 154, e.g., Figure 1 In the example of FIG. 1 , a first connecting member 141 and / or a second connecting member 142 is attached to the second side 150. S2 The solder stop 154 ​​of this example covers the second side 150 S2 , but other arrangements are contemplated. In some examples, the solder stop 154 ​​may be disposed adjacent to the outer periphery of the solder stop. Figure 2A The example combination of the end layer or layer stack 152 shown in FIG, for example, partially covering the second side 152 with the end layer or layer stack 152 S2 A solderable area is defined, and a non-solderable area is defined by the solder stop 154 ​​.

[0035] although Figure 2B An example of the flow divider 150 includes a side wall 150 SW 154 , but this is for illustration purposes only. That is, these are independent and optional features, and some embodiments of the shunt 150 may include only one of the electrically insulating material 153 or the solder stop 154, or neither.

[0036] Figure 3 FIG. 1 shows a perspective view of a molded electronic component 100 according to an embodiment. Specifically, Figure 3 The gap 160 in the metal body 160 is shown g Another example of Figure 1 The gap in the example is 160 g Compared to the gap 160 g Narrower in the x-direction and wider in the y-direction. In this example, the gap 160 g Beyond the transverse bridging section 160 L The length L extends to the vertical bridging section 160 V In. It can be imagined that the gap 160 g Other sizes of

[0037] Figure 4 FIG. 1 shows a perspective view of a molded electronic component 100 according to an embodiment. Specifically, Figure 4 It is shown that the gap 160 is not included in the metal body 160 g In contrast, the transverse bridging section 160 of the metal body 160 L In the transverse bridging section 160 L The length L of the horizontal section 160 of the metal body 160 is adjacent to the metal body 160 H .

[0038] Figures 5A-5C FIG. 1 shows a perspective view of a molded electronic component 100 according to an embodiment. Specifically, Figures 5A-5C An example of a molded electronic component 100 is shown, in which the first connection 141 and the second connection 142 are implemented by physically separated metal conductors.

[0039] exist Figure 5A In the example shown, the first connection member 141 is realized by a metal clip 160 . Figure 5A The metal clip 160 can be similar in material composition, structure, etc. Figure 1 、 Figure 3 and Figure 4 The metal clip 160 includes a horizontal section 160 disposed above the power semiconductor die 110 and attached to the first contact pad 111 of the power semiconductor die 110. H , and the horizontal section 160 H Connected to the second side 150 of the diverter 150 S2 Vertical bridging section 160 V .

[0040] Figure 5A The second connection member 142 is implemented by one or more elongated conductive bodies 171 separated from the metal clip 160. The elongated conductive bodies 171 can be bonding wires, metal ribbons, etc.

[0041] Figure 5B An example is shown in which the second connector 142 is implemented by a single metal body 172 (eg, a metal clip as shown) that is separate from the metal clip 160 .

[0042] Figure 5C An example is shown in which the first connector 141 is implemented by one or more electrical conductors 171 (e.g., bonding wires and / or metal ribbons). In this example, the second connector 142 is also implemented by one or more electrical conductors 171, but it is conceivable that the first connector 141 is implemented by one or more electrical conductors 171 and the second connector 142 is implemented by another type of connector (e.g., Figure 5B An example of a single metal body 172) implementation.

[0043] Figure 6A and Figure 6B A partial plan view of an electronic component 200 according to an embodiment is shown. Electronic component 200 may be a molded electronic component similar to molded electronic component 100, or may be another type of electronic component, such as one in which the component is enclosed in a frame or housing.

[0044] The electronic component 200 includes a plurality of power semiconductor dies 110. The power semiconductor dies 110 can be arranged to form all or part of a circuit, such as a DC / AC inverter, a DC / DC converter, an AC / DC converter, a DC / AC converter, an AC / AC converter, a multi-phase inverter, an H-bridge, a half-bridge, a full-bridge, a motor drive, etc. For example, the power semiconductor dies 110 can be electrically coupled in parallel to form a switching device of the power electronic component.

[0045] The power semiconductor die 110 is attached to a substrate 130. Examples of the substrate 130 include a DCB (direct copper bonding) or AMB (active metal brazing) substrate, a printed circuit board (PCB), a lead frame, an insulated metal substrate (IMS), etc. In this example, the power semiconductor die is attached to a first metal structure 1301 of the substrate 130.

[0046] The electronic component 200 may include more than one substrate 130, with a plurality of power semiconductor dies 110 attached to each substrate 130. For example, in the case of a half-bridge configuration, the electronic component 200 may include two (2) separate substrates 130. A first plurality of power semiconductor dies 110 attached to a first substrate of the substrates 130 may be electrically coupled in parallel to form the low-side switches of the half-bridge. A second plurality of power semiconductor dies 110 attached to a second substrate of the substrates 130 may be electrically coupled in parallel to form the high-side switches of the half-bridge. Alternatively, the first plurality of power semiconductor dies 110 may be attached to a first metal structure (e.g., Figure 6A and Figure 6B ), and the second plurality of power semiconductor dies 110 may be attached to a different metal structure of the substrate (e.g., Figure 6A and Figure 6B In this example, Figure 6A and Figure 6B The switch node output ('SW') shared by the low-side switch and the high-side switch of the half-bridge is shown, where in this example, Figure 6A and Figure 6B The visible power semiconductor die 110 in forms a high-side switch. Again, as mentioned above, the electronic component 200 may implement other power converter circuit configurations.

[0047] As in the molded electronic component 100 , the first side 150 of the shunt 150 of the electronic component 200 S1 Attached to the first terminal 131. The first terminal 131 can be any load / current carrying terminal, such as a DC+ terminal, a DC- terminal, an AC terminal (e.g., a switch node "SW" terminal of a half-bridge), etc. In this example, the first terminal 131 is composed of a first metal body 1311 and a first side 150 connecting the first metal body 1311 to the first side 150 of the shunt 150.S1 The first metal body 1311 and the one or more second metal bodies 1312 are connected to each other. In some examples, the first metal body 1311 and the one or more second metal bodies 1312 are separate bodies that are arranged and attached to each other to form the first terminal 131. For example, the first metal body 1311 can be a lead frame or other metal structure, and the second metal body 1312 can be an elongated conductive body, such as a wire, a ribbon, a clip, etc., attached to the first metal body 1311, for example, by solder, a brazed or welded joint, an adhesive bond, etc. In other examples, the first metal body 1311 and the one or more second metal bodies 1312 can be parts of a single metal body (e.g., a lead frame).

[0048] The first connector 141 of the electronic component 200 is formed between the first contact pad 111 of each power semiconductor die 110 and the second side 150 of the shunt 150. S2 Between. Figure 6A In the example of the electronic component 200 in FIG. 1 , the shunt 150 and more specifically the second side 150 of the shunt 150 is S2 A second metal structure 1302 is attached to the substrate 130 and is separate from the first metal structure 1301 of the substrate 130. In this example, the first connector 141 is implemented by a portion of the second metal structure 1302 of the substrate 130 and one or more metal bodies 160 (e.g., clips) connecting the first contact pad 111 of each power semiconductor die 110 to the second metal structure 1302 of the substrate 130.

[0049] Figure 6B An alternative embodiment of an electronic component 200 is shown in which the first side 150 of the shunt 150 S1 A second metal structure 1302 is attached to the substrate 130. Figure 6B In the example of the electronic component 200 in FIG, the first terminal 131 is implemented by a first metal body 1311, a second metal structure 1302 of the substrate 130, and one or more second metal bodies 1312 connecting the first metal body 1311 and the second metal structure 1302 of the substrate 130. The second metal body 1312 can be attached to the second metal structure 1302 of the substrate 130 by solder, a brazing or welding joint, an adhesive bond, etc. Figure 6B The first connector 141 of the electronic component 200 is formed by connecting the first contact pad 111 of each power semiconductor die 110 to the second side 150 of the shunt 150. S2 The connection is achieved by one or more metal bodies 160 (eg, clips).

[0050] The second connection member 142 of the electronic component 200 is formed between the second terminal 132 and the second side 150 of the shunt 150. S2The second terminal 132 is separated from the first terminal 131 and may be a sensing terminal similar to the sensing terminal 132 of the molded electronic component 100. Figure 6A In the example of the electronic component 200 , the second connector 142 is implemented by a portion of the second metal structure 1302 of the substrate 130 and one or more elongated conductors 171 connecting the second terminal 132 to the second metal structure 1302 of the substrate 130 . Figure 6B In the example of the electronic component 200, the second connector 142 is formed by connecting the second terminal 132 to the second side 150 of the shunt 150. S2 The connection is achieved by one or more elongated conductors 171. Figure 6A and Figure 6B The electrical conductors 171 of the second connector 142 are shown extending between the second metal body 1312 of the first terminal 131, but the second connector 142 may additionally or alternatively include one or more electrical conductors 171 arranged at other locations (e.g., on one or both sides of the arrangement of the second metal body 1312). In some examples, the one or more elongated electrical conductors 171 of the second terminal 132 and the second connector 142 are separate bodies attached to each other, for example, by solder, a brazed or welded joint, an adhesive bond, etc. In other examples, the one or more elongated electrical conductors 171 of the second terminal 132 and the second connector 142 may be part of a single metal body (e.g., a lead frame).

[0051] The electronic component 200 may include a fourth terminal 134 separated from the first terminal 131 and the second terminal 132. The fourth terminal 134 may be a sensing terminal similar to the second terminal 132 of the electronic component 200 and the sensing terminal 132 of the molded electronic component 100. One or more elongated conductive bodies 171 connect the fourth terminal 134 to the first side 150 of the shunt 150. S1 In some examples, the fourth terminal 134 is connected to the first side 150 of the shunt 150. S1 The one or more elongated electrical conductors 171 are separate bodies attached to each other, for example, by solder, brazing or welding joints, adhesive bonding, etc. In other examples, the fourth terminal 134 and the first side 150 connected to the shunt 150 S1 The one or more elongated conductors 171 may be part of a single metal body (eg, a lead frame). Figure 6BA conductor 171 is shown connecting the fourth terminal 134 to the second metal structure 1302 between the second metal body 1312 of the first terminal 131, but the connection between the fourth terminal 134 and the second metal structure 1302 may additionally or alternatively include one or more conductors 171 attached to the second metal structure 1302 at other locations (e.g., on one or both sides of the arrangement of the second metal body 1312).

[0052] Although the present disclosure is not limited in this regard, the following numbered examples illustrate one or more aspects of the present disclosure.

[0053] Example 1. A molded electronic component includes: a power semiconductor die at least partially embedded in a mold compound; a load terminal partially embedded in the mold compound; a sense terminal spaced apart from the load terminal and partially embedded in the mold compound; a shunt having a first side attached to the load terminal; a first connector located between a first contact pad of the power semiconductor die and a second side of the shunt opposite the first side; and a second connector located between the sense terminal and the second side of the shunt, wherein the shunt has a higher specific resistance than the first connector, and wherein the resistance of the shunt varies by less than 10% over a normal operating temperature range of the molded electronic component.

[0054] Example 2. The molded electronic component of Example 1, wherein the shunt comprises a layer of shunt material.

[0055] Example 3. The molded electronic component of Example 2, wherein the shunt material is an alloy including copper and nickel.

[0056] Example 4. The molded electronic component of example 2 or 3, wherein the layer of shunt material has a thickness of at most 700 microns.

[0057] Example 5. The molded electronic component of any of Examples 2 to 4, wherein the layer of shunt material is a foil.

[0058] Example 6. The molded electronic component of any of Examples 2 to 5, wherein at least one of the load terminal or the first connection is directly attached to the layer of shunt material.

[0059] Example 7. The molded electronic component of any of Examples 2 to 6, wherein at least one of the first side of the shunt or the second side of the shunt includes a layer of conductive material adjacent to the layer of shunt material and including a different material than the shunt material.

[0060] Example 8. The molded electronic component of any one of Examples 1 to 7, wherein the specific resistance of the shunt is at least 8 times higher than the specific resistance of the first connection member.

[0061] Example 9. The molded electronic component of any of Examples 1 to 8, wherein the first side of the shunt is soldered, diffusion soldered, sintered, glued, or fused to the load terminal.

[0062] Example 10. The molded electronic component of any of Examples 1 to 9, wherein the first connector is soldered, diffusion soldered, sintered, glued, or fused to the second side of the shunt.

[0063] Example 11. The molded electronic component of any one of Examples 1 to 10, wherein the first connector and the second connector are implemented by a single metal body, wherein the first connector includes a horizontal section of the metal body and a vertical bridge section of the metal body, the horizontal section being disposed above the power semiconductor die and attached to the first contact pad of the power semiconductor die, the vertical bridge section connecting the horizontal section to the second side of the shunt, and wherein the second connector includes a lateral bridge section of the metal body, the lateral bridge section connecting the sense terminal to the second side of the shunt.

[0064] Example 12. The molded electronic component of Example 11, wherein a gap in the metal body separates the lateral bridging section of the metal body from the horizontal section of the metal body over at least a portion of the length of the lateral bridging section.

[0065] Example 13. The molded electronic component of Example 11, wherein the transverse bridge section of the metal body abuts the horizontal section of the metal body over the length of the transverse bridge section.

[0066] Example 14. The molded electronic component of any one of Examples 1 to 10, wherein the first connector and the second connector are implemented by physically separated metal conductors.

[0067] Example 15. The molded electronic component of Example 14, wherein the second connection is realized by one or more bonding wires and / or metal ribbons or a single metal body.

[0068] Example 16. The molded electronic component of Example 14 or 15, wherein the first connector is implemented by a metal clip, the metal clip comprising a horizontal section disposed above the power semiconductor die and attached to the first contact pad of the power semiconductor die, and a vertical bridging section connecting the horizontal section to the second side of the shunt.

[0069] Example 17. The molded electronic component of example 14 or 15, wherein the first connection is realized by one or more bonding wires and / or metal ribbons.

[0070] Example 18. The molded electronic component of any of Examples 1 to 17, wherein the shunt comprises an electrically insulating material on at least one sidewall of the shunt.

[0071] Example 19. The molded electronic component of any of Examples 1 to 18, wherein both the first connector and the second connector are soldered to the second side of the shunt, and wherein the second side of the shunt includes a solder stop containing solder.

[0072] Example 20. The molded electronic component of any of Examples 1 to 19, wherein a second contact pad on a side of the power semiconductor die opposite the first contact pad is attached to a lead frame partially embedded in the mold compound.

[0073] Example 21. An electronic component comprising: a plurality of power semiconductor dies attached to a substrate; a first terminal; a second terminal spaced apart from the first terminal; a shunt having a first side attached to the first terminal and a second side opposite the first side; a first connector located between a first contact pad of each of the power semiconductor dies and the second side of the shunt; and a second connector located between the second terminal and the second side of the shunt, wherein the shunt has a higher specific resistance than the first connector, and wherein the resistance of the shunt varies by less than 10% over a normal operating temperature range of the electronic component.

[0074] Example 22. The electronic component of Example 21, wherein the power semiconductor die is attached to a first metal structure of the substrate, wherein the second side of the shunt is attached to a second metal structure of the substrate, and wherein the first connector is implemented by a portion of the second metal structure of the substrate and one or more metal bodies connecting the first contact pad of each of the power semiconductor dies to the second metal structure of the substrate.

[0075] Example 23. The electronic component of Example 21 or 22, wherein the power semiconductor die is attached to a first metal structure of the substrate, wherein the second side of the shunt is attached to a second metal structure of the substrate, and wherein the second connector is implemented by a portion of the second metal structure of the substrate and one or more elongated electrical conductors connecting the second terminal to the second metal structure of the substrate.

[0076] Example 24. The electronic component of any one of Examples 21 to 23, wherein the first terminal is implemented by a first metal body and one or more second metal bodies connecting the first metal body to the first side of the shunt.

[0077] Example 25. The electronic component of any one of Examples 21 to 24, further comprising: a fourth terminal spaced apart from the first terminal and the second terminal; and one or more elongated electrical conductors connecting the fourth terminal to the first side of the shunt.

[0078] Example 26. The electronic component of any of Examples 21 to 25, wherein the power semiconductor dies are electrically coupled in parallel to form a switching device.

[0079] Example 27. The electronic component of Example 26, wherein the switching device is a high-side switch of a half-bridge.

[0080] Terms such as "first", "second", etc. are used to describe various elements, regions, sections, etc., and are not intended to be limiting. Throughout the specification, the same terms refer to the same elements.

[0081] As used herein, the terms "having," "containing," "including," "comprising," and the like are open-ended terms that indicate the presence of stated elements or features, but do not exclude other elements or features. The articles "a," "an," and "the" are intended to include the plural as well as the singular, unless the context clearly indicates otherwise.

[0082] Unless expressly stated otherwise, the expression "and / or" should be interpreted as including all possible combinations and separations. For example, the expression "A and / or B" should be interpreted as meaning only A, only B, or both A and B. Unless expressly stated otherwise, the expression "at least one of..." should be interpreted in the same manner as "and / or." For example, the expression "at least one of A and B" should be interpreted as meaning only A, only B, or both A and B.

[0083] It will be understood that the features of the various embodiments described herein may be combined with each other, unless specifically stated otherwise.

[0084] Although specific embodiments have been shown and described herein, it will be understood by those skilled in the art that various alternative and / or equivalent embodiments may be substituted for the specific embodiments shown and described without departing from the scope of the present invention. This application is intended to cover any modifications or variations of the specific embodiments discussed herein. Therefore, the present invention is limited only by the claims and their equivalents.

Claims

1. A molded electronic component comprising: a power semiconductor die at least partially embedded in the mold compound; a load terminal partially embedded in the molding compound; a sense terminal spaced apart from the load terminal and partially embedded in the mold compound; a shunt having a first side attached to the load terminal; a first connector located between a first contact pad of the power semiconductor die and a second side of the shunt opposite the first side; as well as a second connecting member, the second connecting member being located between the sensing terminal and the second side of the shunt, wherein the shunt has a higher specific resistance than the first connecting member, and The resistance of the shunt varies by less than 10% within a normal operating temperature range of the molded electronic component.

2. The molded electronic component according to claim 1, wherein The flow diverter comprises a layer of flow diverter material.

3. The molded electronic component according to claim 2, wherein The shunt material is an alloy comprising copper and nickel.

4. The molded electronic component according to claim 2, wherein The layer of diverter material has a thickness of a maximum of 700 microns.

5. The molded electronic component according to claim 2, wherein The layer of diverter material is a foil.

6. The molded electronic component according to claim 2, wherein At least one of the load terminal or the first connection is directly attached to the layer of shunt material.

7. The molded electronic component according to claim 2, wherein At least one of the first side of the shunt or the second side of the shunt includes a layer of conductive material adjacent to the layer of shunt material and including a layer of conductive material different from the shunt material.

8. The molded electronic component according to claim 1, wherein The specific resistance of the shunt is at least 8 times higher than the specific resistance of the first connecting member.

9. The molded electronic component according to claim 1, wherein The first side of the shunt is soldered, diffusion soldered, sintered, glued or fused to the load terminals.

10. The molded electronic component according to claim 1, wherein The first connector is welded, diffusion welded, sintered, glued or fused to the second side of the shunt.

11. The molded electronic component according to claim 1, in, The first connecting member and the second connecting member are realized by a single metal body, wherein the first connector includes a horizontal section of the metal body and a vertical bridging section of the metal body, the horizontal section being disposed above the power semiconductor die and attached to the first contact pad of the power semiconductor die, the vertical bridging section connecting the horizontal section to the second side of the shunt, and The second connector includes a transverse bridge section of the metal body connecting the sensing terminal to the second side of the shunt.

12. The molded electronic component according to claim 11, in, A gap in the metal body separates the transverse bridge section of the metal body from the horizontal section of the metal body over at least a portion of the length of the transverse bridge section.

13. The molded electronic component according to claim 11, wherein The transverse bridge section of the metal body adjoins the horizontal section of the metal body over the length of the transverse bridge section.

14. The molded electronic component according to claim 1, wherein The first connecting member and the second connecting member are realized by physically separated metal conductors.

15. The molded electronic component according to claim 14, wherein The second connection is realized by one or more bonding wires and / or metal ribbons or a single metal body.

16. The molded electronic component according to claim 14, wherein The first connector is implemented by a metal clip comprising a horizontal section and a vertical bridging section, the horizontal section being disposed above the power semiconductor die and attached to the first contact pad of the power semiconductor die, the vertical bridging section connecting the horizontal section to the second side of the shunt.

17. The molded electronic component according to claim 14, wherein The first connection element is realized by one or more bonding wires and / or metal ribbons.

18. The molded electronic component according to claim 1, wherein The shunt includes an electrically insulating material on at least one sidewall of the shunt.

19. The molded electronic component according to claim 1, wherein Both the first connector and the second connector are soldered to the second side of the shunt, and wherein the second side of the shunt includes a solder stop containing solder.

20. The molded electronic component according to claim 1, wherein A second contact pad on a side of the power semiconductor die opposite the first contact pad is attached to a lead frame that is partially embedded in the mold compound.

21. An electronic component comprising: a plurality of power semiconductor dies attached to a substrate; First terminal; a second terminal, the second terminal being separated from the first terminal; a shunt having a first side attached to the first terminal and a second side opposite the first side; a first connector between a first contact pad of each of the power semiconductor dies and the second side of the shunt; as well as a second connector, the second connector being located between the second terminal and the second side of the shunt, wherein the shunt has a higher specific resistance than the first connecting member, and The resistance of the shunt varies by less than 10% within a normal operating temperature range of the electronic component.

22. The electronic component according to claim 21, in, The power semiconductor die is attached to a first metal structure of the substrate, wherein the second side of the shunt is attached to a second metal structure of the substrate, and The first connector is realized by a portion of the second metal structure of the substrate and one or more metal bodies connecting the first contact pad of each of the power semiconductor dies to the second metal structure of the substrate.

23. The electronic component according to claim 21, in, The power semiconductor die is attached to a first metal structure of the substrate, wherein the second side of the shunt is attached to a second metal structure of the substrate, and The second connecting member is realized by a portion of the second metal structure of the substrate and one or more elongated conductors connecting the second terminal to the second metal structure of the substrate.

24. The electronic component according to claim 21, wherein The first terminal is realized by a first metal body and one or more second metal bodies connecting the first metal body to the first side of the shunt.

25. The electronic component according to claim 21, in, The power semiconductor die is attached to a first metal structure of the substrate, wherein the first side of the shunt is attached to a second metal structure of the substrate, and The first terminal is realized by a first metal body, the second metal structure of the substrate, and one or more second metal bodies connecting the first metal body and the second metal structure of the substrate.

26. The electronic component according to claim 21, further comprising: an additional terminal, the additional terminal being separated from the first terminal and the second terminal; as well as One or more elongated electrical conductors connecting the additional terminal with the first side of the shunt.

27. The electronic component according to claim 21, wherein The power semiconductor dies are electrically coupled in parallel to form a switching device.

28. The electronic component according to claim 27, wherein The switching device is a high-side switch of a half-bridge.

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