Self-driven ultraviolet detector based on boron gradient doped diamond homojunction and preparation method thereof
By using a self-driven ultraviolet detector based on boron gradient-doped diamond homojunction, self-driven detection is achieved by utilizing the built-in electric field, which solves the problems of large size and the need for external power supply of existing ultraviolet detectors, and realizes high responsivity and stable self-driven ultraviolet detection effect.
Patent Information
- Application Number
- CN202511023801.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-24
- Publication Date
- 2025-10-24
AI Technical Summary
Existing ultraviolet detectors, such as photomultiplier tubes and silicon-based detectors, suffer from problems such as large size, easy damage, or the need for additional filters, and require an external power supply to operate, which limits their applications.
A self-driven ultraviolet detector based on boron gradient doped diamond homojunction is used. By setting electrodes in regions with different boron doping concentrations, self-driven detection is achieved by utilizing the built-in electric field. The fabrication methods include laser direct writing lithography and magnetron sputtering technology.
It achieves a responsivity of 3.5mA/W and a specific detection rate of 1012Jones under 0V bias, has good stability and self-driving capability, and is suitable for missile tracking, fire warning, ozone monitoring and optical communication.
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Figure CN120835635A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application belongs to the technical field of detection devices, and particularly relates to a self-driven ultraviolet detector based on a boron gradient doped diamond homojunction and a preparation method thereof. BACKGROUND
[0002] The ultraviolet detector has the advantages of high signal-to-noise ratio, low false alarm rate, high sensitivity, and the like, and has important applications in aspects such as missile tracking, fire warning, ozone monitoring, and optical communication.
[0003] At present, the ultraviolet detectors mainly developed are photomultiplier tubes and silicon-based ultraviolet detectors; the photomultiplier tube detector needs to work under high voltage, and is bulky and easy to be damaged; the silicon-based ultraviolet detector needs an additional filter and filler to realize absorption of ultraviolet rays, which undoubtedly increases the complexity of the device.
[0004] The wide-bandgap semiconductor itself has certain selectivity to the wavelength, and has the advantages of simple structure, high stability, and easy integration, and research on the ultraviolet light detector made of the wide-bandgap semiconductor material is rapidly promoted. Diamond becomes an ideal candidate material for the ultraviolet detector due to the advantages of an ultrawide bandgap, high thermal conductivity, high radiation resistance, chemical stability, and the like; at present, there are reports on diamond ultraviolet detectors being applied, but these ultraviolet detectors generally need an external power supply to work, which limits the application thereof. SUMMARY
[0005] Therefore, on one hand, the present application discloses a self-driven ultraviolet detector based on a boron gradient doped diamond homojunction; the detector comprises:
[0006] a boron gradient doped diamond substrate; the boron gradient doped diamond substrate comprises a region with a lower boron doping concentration and a region with a higher boron doping concentration;
[0007] electrodes; the electrodes comprise two, and are respectively arranged in the region with the lower boron doping concentration and the region with the higher boron doping concentration.
[0008] Further, some embodiments disclose a self-driven ultraviolet detector based on a boron gradient doped diamond homojunction, and the electrodes are titanium gold electrodes.
[0009] Some embodiments disclose a self-driven ultraviolet detector based on a boron gradient doped diamond homojunction, and the region with the lower boron doping concentration is a cathode region, and the region with the higher boron doping concentration is an anode region; the ultraviolet detector has a responsivity of 3.5 mA / W under a bias voltage of 0 V, and a specific detectivity of 1.2 x 1011 Jones. 12 Jones's specific detectivity.
[0010] On the other hand, some embodiments disclose a preparation method of a self-driven ultraviolet detector based on a boron gradient doped diamond homojunction, comprising the following steps:
[0011] S1, preparing a boron gradient doped diamond substrate, wherein the boron gradient doped diamond substrate comprises a region with a lower boron doping concentration and a region with a higher boron doping concentration;
[0012] S2, using a laser direct writing lithography method to respectively engrave an electrode shape on the region with the lower boron doping concentration and the region with the higher boron doping concentration;
[0013] S3, using a magnetron sputtering method to sputter a layer of titanium and gold on the electrode shape to obtain a titanium-gold electrode;
[0014] S4, peeling off the photoresist on the boron gradient doped diamond substrate to obtain a self-driven ultraviolet detector based on a boron gradient doped diamond homojunction.
[0015] Some embodiments disclose a preparation method of a self-driven ultraviolet detector based on a boron gradient doped diamond homojunction, step S1 comprising:
[0016] S101, selecting high-purity graphite as a carbon source, high-purity amorphous boron powder as a boron source, and FeNi metal alloy as a catalyst;
[0017] S102, putting the high-purity graphite and the FeNi metal alloy into a mixer for sufficient mixing, and then putting the mixed raw materials and the high-purity amorphous boron powder into a tubular vacuum furnace;
[0018] S103, vacuumizing the tubular vacuum furnace to 10 -3 Pa, and heating to the gasification temperature of the high-purity amorphous boron powder, the gasified boron atoms being doped into the high-purity graphite and the FeNi metal alloy to obtain a uniformly mixed precursor;
[0019] S104, putting the uniformly mixed precursor into a six-surface press cavity to grow a boron gradient doped diamond under a set temperature and pressure;
[0020] S105, putting the obtained boron gradient doped diamond crystal into hot sulfuric acid and nitric acid in a volume ratio of 3:1 for post-processing to obtain a purified boron gradient doped diamond substrate.
[0021] Some embodiments disclose a preparation method of a self-driven ultraviolet detector based on a boron gradient doped diamond homojunction, step S2 comprising:
[0022] S201, spin-coating photoresist on the boron gradient doped diamond substrate, the spin-coating time being 60 s and the spin-coating rotation speed being 5000 r / s;
[0023] S202, heating the boron gradient doped diamond substrate with the spin-coated photoresist at 115°C;
[0024] S203, using a laser direct writing photoetching machine to perform exposure treatment on electrode shape setting positions of the region with low boron doping concentration and the region with high boron doping concentration, wherein an exposure parameter is set as 185 mj / cm 2 ;
[0025] S204, heating the boron gradient doped diamond substrate after the exposure treatment at 115 DEG C;
[0026] S205, then removing the photoresist after the exposure treatment in a TMAH solution to form an electrode shape on the boron gradient doped diamond substrate, then rinsing residual developing solution with deionized water, and finally blowing dry with nitrogen.
[0027] Some embodiments disclose a preparation method of the self-driven ultraviolet detector based on the boron gradient doped diamond homojunction, and step S3 specifically comprises:
[0028] S301, transferring the cleaned boron gradient doped diamond substrate to a magnetron sputtering vacuum chamber;
[0029] S302, after vacuumizing the magnetron sputtering vacuum chamber, sputtering titanium and gold, and the sputtering time is 3 min and 5 min respectively, to form a titanium-gold electrode on the electrode shape region of the boron gradient doped diamond substrate.
[0030] Some embodiments disclose a preparation method of the self-driven ultraviolet detector based on the boron gradient doped diamond homojunction, and in step S4, the method for stripping the photoresist is: placing the boron gradient doped diamond substrate with the sputtered titanium-gold electrode in acetone, soaking for 5 min, and placing in an ethanol solution for cleaning for 30 s to strip the photoresist.
[0031] Some embodiments disclose a preparation method of the self-driven ultraviolet detector based on the boron gradient doped diamond homojunction, and the temperature for growing the boron gradient doped diamond is 1600 DEG C, the pressure is 5 GPa, and the time is 5 h.
[0032] Some embodiments disclose a preparation method of the self-driven ultraviolet detector based on the boron gradient doped diamond homojunction, and the mass ratio of the high-purity graphite to the high-purity amorphous boron powder is 10:1.
[0033] The self-driven ultraviolet detector based on the boron gradient doped diamond homojunction disclosed in the embodiments has a responsivity of 3.5 mA / W under a bias voltage of 0 V, a Jones specific detectivity of 10 12 Jones, can effectively perform self-driven ultraviolet detection, has good stability, and has good application prospects. BRIEF DESCRIPTION OF DRAWINGS
[0034] Figure 1 A structure principle diagram of the self-driven ultraviolet detector based on the boron gradient doped diamond homojunction.
[0035] Figure 2 Optical photograph of boron gradient-doped diamond substrate;
[0036] Figure 3 Optical photographs of diamonds doped with boron at different concentrations synthesized in Example 1;
[0037] Figure 4 Example 1 is based on the X-ray photoelectron spectrum of the boron gradient-doped diamond substrate;
[0038] Figure 5 Example 1 Test results of a self-driven ultraviolet detector based on a boron gradient-doped diamond homojunction under different light intensities;
[0039] Figure 6 Example 1 Test results of a self-driven UV detector based on a boron gradient-doped diamond homojunction under UV light and dark environments;
[0040] Figure 7 Example 1: Test results of periodic photoresponse of a self-driven ultraviolet detector based on a boron gradient-doped diamond homojunction under a bias voltage of 0V. DETAILED DESCRIPTION
[0041] The term "embodiment" is used herein specifically to describe any embodiment as "exemplary," and should not be construed as superior or preferable to other embodiments. Performance indicators in the embodiments of the present invention were tested using conventional testing methods in the art, unless otherwise specified. It should be understood that the terms used in the embodiments of the present invention are intended solely to describe specific implementations and are not intended to limit the disclosure of the embodiments of the present invention.
[0042] Unless otherwise specified, the technical and scientific terms used herein have the same meanings as commonly understood by those skilled in the art to which the embodiments of the present invention pertain; any experimental methods and technical means not otherwise specified in the embodiments of the present invention refer to experimental methods and technical means commonly used by those skilled in the art.
[0043] As used herein, the terms "substantially" and "approximately" are used to describe small fluctuations. For example, they can refer to less than or equal to ±5%, such as less than or equal to ±2%, such as less than or equal to ±1%, such as less than or equal to ±0.5%, such as less than or equal to ±0.2%, such as less than or equal to ±0.1%, such as less than or equal to ±0.05%. Numerical data expressed or presented in range format herein are used for convenience and brevity only and should therefore be interpreted flexibly to include not only the values explicitly listed as the limits of the range, but also all independent values or subranges contained within the range. For example, a numerical range of "1-5%" should be interpreted to include not only the explicitly listed values of 1% to 5%, but also the independent values and subranges within the indicated range. Thus, included in this numerical range are independent values such as 2%, 3.5%, and 4%, and subranges such as 1% to 3%, 2% to 4%, and 3% to 5%, etc. This principle also applies to ranges that only list a single value. Furthermore, this interpretation applies regardless of the width of the range or the characteristics described.
[0044] Throughout this document, including in the claims, transitional terms such as "comprises," "includes," "with," "having," "contains," "involving," and "accommodating" are understood to be open-ended, meaning "including but not limited to." Only the transitional terms "consisting of" and "composed of" are closed transitional terms.
[0045] In order to better illustrate the present invention, numerous specific details are provided in the following specific examples. It should be understood by those skilled in the art that the present invention can be practiced without certain specific details. In the examples, some methods, means, instruments, and equipment well known to those skilled in the art are not described in detail in order to highlight the main purpose of the present invention.
[0046] Under the premise of no conflict, the technical features disclosed in the embodiments of the present invention can be arbitrarily combined, and the resulting technical solutions belong to the contents disclosed in the embodiments of the present invention.
[0047] In some embodiments, a self-driven ultraviolet detector based on a boron gradient-doped diamond homojunction includes: a boron gradient-doped diamond substrate; the boron gradient-doped diamond substrate includes a region with a lower boron doping concentration and a region with a higher boron doping concentration; an electrode; the electrode includes two electrodes, which are respectively arranged in the region with a lower boron doping concentration and the region with a higher boron doping concentration.
[0048] Typically, the ratio of the number of boron atoms in the region with a higher boron doping concentration to the region with a lower boron doping concentration is not less than 100:1. In some embodiments, the atomic concentration of boron atoms in the region with a higher boron doping concentration is 10 18 pcs·cm -3 The atomic concentration of boron atoms in the region with low boron doping concentration is 1016 cm -3 .
[0049] In some embodiments, the electrode is a titanium-gold electrode.
[0050] In some embodiments, the region with lower boron doping concentration is a cathode region, and the region with higher boron doping concentration is an anode region; the ultraviolet detector has a responsivity of 3.5 mA / W at 0 V bias, 10 12 Jones specific detectivity.
[0051] Generally, when the boron doping concentration in the diamond is low, the diamond crystal is colorless and has strong transparency; as the boron doping concentration increases, the diamond crystal gradually begins to show a light blue region; when the doping concentration of boron atoms is further increased, the sample turns dark blue, and finally becomes black. At the same time, as the color deepens, the transparency of the diamond crystal gradually deteriorates, and finally only some weak light can be transmitted. The deepening of the color of the diamond crystal is caused by the absorption of light by boron in the diamond, which is a typical feature of boron gradient-doped diamond.
[0052] A schematic diagram of a self-driven ultraviolet detector based on a boron gradient-doped diamond homojunction is shown in Figure 1 ; the structure of a self-driven ultraviolet detector based on a boron gradient-doped diamond homojunction disclosed in some embodiments is shown in Figure 2 . There is a concentration difference between the region with higher boron doping concentration and the region with lower boron doping concentration in the diamond crystal, i.e., there is a difference in the boron atom doping concentration between the two electrode regions, and the electrons and holes drift and diffuse to form an internal electric field; after ultraviolet light excitation, photo-generated electron-hole pairs are formed, and drift-diffusion current is formed under the action of the internal electric field, which breaks the balance and increases the current, thereby achieving self-driven detection of ultraviolet light.
[0053] In some embodiments, the preparation method of the self-driven ultraviolet detector based on a boron gradient-doped diamond homojunction comprises the following steps:
[0054] S1, preparing a boron gradient-doped diamond substrate, wherein the boron gradient-doped diamond substrate comprises a region with lower boron doping concentration and a region with higher boron doping concentration;
[0055] S2, using a laser direct writing lithography method to draw an electrode shape on the region with lower boron doping concentration and the region with higher boron doping concentration, respectively;
[0056] S3, using a magnetron sputtering method to sputter a layer of titanium and gold on the electrode shape to obtain a titanium-gold electrode;
[0057] S4, peeling off the photoresist on the boron gradient-doped diamond substrate to obtain a self-driven ultraviolet detector based on a boron gradient-doped diamond homojunction.
[0058] Some embodiments disclose a preparation method of a self-driven ultraviolet detector based on boron gradient doped diamond homojunction, step S1 comprises:
[0059] S101, high-purity graphite is selected as a carbon source, high-purity amorphous boron powder is selected as a boron source, and FeNi metal alloy is selected as a catalyst;
[0060] S102, the high-purity graphite and the FeNi metal alloy are put into a mixer for fully mixing, and then the mixed raw materials and the high-purity amorphous boron powder are put into a tubular vacuum furnace;
[0061] S103, the tubular vacuum furnace is vacuumized to 10 -3 Pa, and heated to a gasification temperature of the high-purity amorphous boron powder, boron atoms are doped into the high-purity graphite and the FeNi metal alloy, and a mixed uniform precursor is obtained;
[0062] S104, the mixed uniform precursor is put into a cavity of a cubic press, and a boron gradient doped diamond is obtained under a set temperature and pressure; during the growth of the diamond crystal, due to the anisotropy of the diamond crystal, the boron atoms have different growth rates in different regions of the diamond crystal, thereby a difference in boron ion concentration is generated in different regions formed in different growth directions; and then a high-concentration boron doped region and a low-concentration boron doped region are formed in the diamond crystal substrate; this is a typical feature of the boron gradient doped diamond;
[0063] S105, the obtained boron gradient doped diamond crystal is put into hot sulfuric acid and nitric acid in a volume ratio of 3:1 for post-processing, so as to remove unreacted graphite, catalyst and impurities attached to the surface of the diamond crystal, and a purified boron gradient doped diamond substrate is obtained.
[0064] Some embodiments disclose a preparation method of a self-driven ultraviolet detector based on boron gradient doped diamond homojunction, step S2 specifically comprises:
[0065] S201, a photoresist is spin-coated on the boron gradient doped diamond substrate, the spin-coating time is 60 s, and the spin-coating rotation speed is 5000 r / s;
[0066] S202, the boron gradient doped diamond substrate with the spin-coated photoresist is heated and solidified at 115°C for 90 s;
[0067] S203, a laser direct writing photoetching machine is used to perform exposure processing on electrode shape setting positions in a region with a lower boron doping concentration and a region with a higher boron doping concentration, wherein the exposure parameter is set to 185 mj / cm 2 ;
[0068] S204, the boron gradient doped diamond substrate after exposure treatment is heated and solidified at 115℃ for 90s;
[0069] S205, then developed in TMAH solution for 90s to remove the photoresist region exposed during the exposure process, and the photoresist removal region on the boron gradient doped diamond substrate forms an electrode shape; then the residual developing solution is washed with deionized water, and finally dried with nitrogen.
[0070] Some embodiments disclose a preparation method of a self-driven ultraviolet detector based on a boron gradient doped diamond homojunction, and step S3 specifically comprises:
[0071] S301, the cleaned boron gradient doped diamond substrate is transferred to a magnetron sputtering vacuum chamber;
[0072] S302, after vacuumizing the magnetron sputtering vacuum chamber, titanium and gold are sputtered to form a titanium-gold electrode in the electrode-shaped region of the gradient doped diamond substrate, and the sputtering time is 3min and 5min respectively.
[0073] Some embodiments disclose a preparation method of a self-driven ultraviolet detector based on a boron gradient doped diamond homojunction, and in step S4, the method for stripping the photoresist is as follows: the boron gradient doped diamond substrate with sputtered titanium-gold electrode is placed in acetone for 5min of soaking, and then placed in an ethanol solution for 30s of cleaning, so that the remaining photoresist is stripped, and two electrodes are formed on the boron gradient doped diamond homojunction, and the two electrodes are located in regions with different boron doping concentrations respectively.
[0074] Some embodiments disclose a preparation method of a self-driven ultraviolet detector based on a boron gradient doped diamond homojunction, and the growth temperature of the boron gradient doped diamond is 1600℃, the pressure is 5GPa, and the time is 5h.
[0075] Some embodiments disclose a preparation method of a self-driven ultraviolet detector based on a boron gradient doped diamond homojunction, and the mass ratio of high-purity graphite to high-purity amorphous boron powder is 10:1.
[0076] The self-driven ultraviolet detector based on a boron gradient doped diamond homojunction disclosed in the embodiments has a responsivity of 3.5mA / W under a bias voltage of 0V, 10 12 The specific detectivity of Jones can effectively perform self-driven ultraviolet detection, has good stability, and has good application prospect.
[0077] The technical details are further exemplarily described below in combination with embodiments.
[0078] Embodiment 1
[0079] The preparation method of the self-driven ultraviolet detector based on the boron gradient doped diamond homojunction in embodiment 1 comprises the following steps:
[0080] In S101, high-purity graphite with a purity greater than 999.9% is selected as a carbon source, high-purity amorphous boron powder with a purity greater than 999.9% is selected as a boron source, and FeNi metal alloy is selected as a catalyst.
[0081] In S102, the high-purity graphite and the FeNi metal alloy are fully mixed in a mixer, and then the mixed raw materials and the high-purity amorphous boron powder are placed in a tube-type vacuum furnace.
[0082] In S103, the tube-type vacuum furnace is vacuumized to 10 -3 Pa, and heated to the gasification temperature of the high-purity amorphous boron powder. The gasified boron atoms are doped into the high-purity graphite and the FeNi metal alloy to obtain a uniformly mixed precursor.
[0083] In S104, the uniformly mixed precursor is placed in a six-surface press cavity, and grown under a set temperature and pressure to obtain boron gradient doped diamond. In the experiment, the proportion of boron dopant entering the precursor can be controlled by adjusting the temperature and time of heating the precursor in the vacuum tube. The specific growth conditions and growth results are shown in Table 1. Then, under the conditions of a pressure of 5 GPa and a temperature of 1600℃, four large-size single crystal diamonds with different boron concentrations are synthesized, numbered as BDD-1, BDD-2, BDD-3, and BDD-4.
[0084] Table 1: Growth conditions of boron gradient doped diamond in embodiment 1
[0085]
[0086] In S105, the obtained boron gradient doped diamond crystal is placed in hot sulfuric acid and nitric acid with a volume ratio of 3:1 for post-processing to obtain a purified boron gradient doped diamond substrate. The boron gradient doped diamond substrate includes a region with a lower boron doping concentration and a region with a higher boron doping concentration.
[0087] The morphology of the boron gradient doped diamond crystal is observed by an optical microscope. Figure 3are BDD-1~BDD-4, respectively; the diamond crystal size is about 5mm, and all the samples have complete crystal structure, which shows that the boron concentration added in the experiment has little effect on the crystal quality; when the doping concentration is low, the crystal is colorless and transparent, and then with the increase of boron doping concentration, the sample gradually begins to show a light blue region; when the proportion of added boron impurities is further increased, the sample turns into dark blue, and finally becomes black; at the same time, with the deepening of the color, the transparency of the crystal gradually deteriorates, and finally only some weak light can be transmitted; the deepening of the color of the diamond crystal is caused by the absorption of boron element in the diamond to light, which is a typical feature of boron gradient doped diamond.
[0088] The four diamond crystals are cut by laser, and the optical images after cutting are shown in Figure 3 (b); BDD-3 is selected as the preferred boron gradient doped diamond substrate, wherein the atomic concentration of boron atoms in the region with higher boron doping concentration is 10 18 × 1018atoms / cm -3 , and the atomic concentration of boron atoms in the region with lower boron doping concentration is 10 16 × 1016atoms / cm -3 .
[0089] In Example 1, the X-ray photoelectron spectrum of the BDD-3 boron gradient doped diamond substrate is shown in Figure 4 ;
[0090] S201, spin coating photoresist on the boron gradient doped diamond substrate, spin coating time 60s, spin coating speed 5000r / s;
[0091] S202, heating the boron gradient doped diamond substrate with spin-coated photoresist at 115℃ for 90s;
[0092] S203, using laser direct writing photoetching machine to perform exposure treatment, and exposing the photoresist at the set electrode shape parts in the region with lower boron doping concentration and the region with higher boron doping concentration, wherein the exposure parameter is set to 185mj / cm 2 ;
[0093] S204, heating the boron gradient doped diamond substrate after exposure treatment at 115℃ for 90s;
[0094] S205, then developing in TMAH solution for 90s to remove the exposed photoresist, and forming electrode shape on the substrate; then rinsing the residual developing solution with deionized water, and finally blowing dry with nitrogen.
[0095] S301, the cleaned boron gradient doped diamond substrate is transferred into a magnetron sputtering vacuum chamber;
[0096] S302, after vacuumizing the magnetron sputtering vacuum chamber, titanium and gold are sputtered for 3 min and 5 min respectively, and the electrode-shaped region on the boron gradient doped diamond substrate is sputtered with titanium and gold to obtain a titanium-gold electrode.
[0097] S4, the boron gradient doped diamond substrate with the sputtered titanium-gold electrode is placed in acetone for 5 min of soaking, and then is placed in an ethanol solution for 30 s of cleaning to peel off the photoresist, thereby obtaining a self-driven ultraviolet detector based on a boron gradient doped diamond homojunction.
[0098] The self-driven ultraviolet detector based on a boron gradient doped diamond homojunction prepared in Example 1 is tested by using a semiconductor analyzer 4200, and the test results under different light intensities at a bias voltage of 0 V are shown in Figure 5 Figure 5 It can be seen from Figure 6 that when the light power density of the boron gradient doped diamond homojunction self-driven ultraviolet detector is increased from 0.4 mW·cm -1 to 2.4 mW·cm -1 , the photocurrent of the ultraviolet detector is increased from 10 -12 A to 10 -7 A, because stronger light can generate more photo-generated carriers, which proves that the detector has a self-driven function; and has a responsivity of 3.5 mA / W and a specific detectivity of 10 12 Jones; the device is respectively placed in an ultraviolet light of 266 nm wavelength and a dark environment for testing, and the test results are shown in
[0099] The stability of the self-driven ultraviolet detector based on a boron gradient doped diamond homojunction determines the reliability of the boron gradient doped diamond homojunction self-driven ultraviolet detector; therefore, the stability thereof is tested.
[0100] The stability test results of the self-driven ultraviolet detector based on a boron gradient doped diamond homojunction in Example 1 are as follows:
[0101] The device is placed under a bias voltage of 0 V, and a periodic light response test of 8000 s is performed on the device, and each test period is 40 s, as shown in Figure 7 In the test, the amplitude, width and period of the photocurrent remain highly consistent, and there is no obvious decay or fluctuation, which indicates that the detector has excellent stability and reliability under periodic working conditions.
[0102] The self-driven ultraviolet detector based on the boron gradient doped diamond homojunction disclosed by the embodiment of the application has a responsivity of 3.5 mA / W under 0V bias, 10 12 The specific detectivity of Jones can effectively perform self-driven ultraviolet detection, has good stability, and has good application prospect.
[0103] The technical solutions disclosed by the embodiments of the application and the technical details disclosed in the embodiments are only exemplary to illustrate the inventive concept of the application, and do not constitute a limitation on the technical solutions of the embodiments of the application. Any conventional change, replacement or combination of the technical details disclosed in the embodiments of the application has the same inventive concept as the application, and is within the protection scope of the claims of the application.
Claims
1. A self-driven UV detector based on boron gradient-doped diamond homojunction, characterized in that, Comprise: A boron gradient doped diamond substrate; the boron gradient doped diamond substrate comprises a region with a lower boron doping concentration and a region with a higher boron doping concentration; Electrodes; The electrodes comprise two, respectively arranged in the region with a lower boron doping concentration and the region with a higher boron doping concentration.
2. The boron gradient doped diamond homojunction based self-driven UV detector according to claim 1, wherein, The electrodes are titanium-gold electrodes.
3. The boron gradient doped diamond homojunction based self-driven UV detector according to claim 1, wherein, The region with lower boron doping concentration is the cathode region, and the region with higher boron doping concentration is the anode region; the ultraviolet detector has a responsivity of 3.5 mA / W at 0 V bias, 10 12 Specific detectivity of Jones.
4. The method of producing a self-driven ultraviolet detector based on boron- gradient-doped diamond homojunction according to claim 1, characterized in that, Comprise steps: S1, preparing a boron gradient doped diamond substrate, wherein the boron gradient doped diamond substrate comprises a region with a lower boron doping concentration and a region with a higher boron doping concentration; S2, using a laser direct writing lithography method to engrave an electrode shape in the region with a lower boron doping concentration and the region with a higher boron doping concentration, respectively; S3, using a magnetron sputtering method to sputter a layer of titanium and gold on the electrode shape to obtain a titanium-gold electrode; S4, stripping the photoresist on the boron gradient doped diamond substrate to obtain a self-driven ultraviolet detector based on a boron gradient doped diamond homojunction.
5. The method for preparing a self-driven ultraviolet detector based on a boron gradient doped diamond homojunction according to claim 4, characterized in that: Step S1 comprises: S101, selecting high-purity graphite as a carbon source, high-purity amorphous boron powder as a boron source, and FeNi metal alloy as a catalyst; S102, putting the high-purity graphite and FeNi metal alloy into a mixer for thorough mixing, and then putting the mixed raw materials and high-purity amorphous boron powder into a tubular vacuum furnace; S103, evacuate the tubular vacuum furnace to 10 -3 Pa and heated to the vaporization temperature of high-purity amorphous boron powder, the vaporized boron atoms are doped into high-purity graphite and FeNi metal alloy to obtain a uniformly mixed precursor; S104, putting the mixed precursor into a six-surface press cavity, growing a boron gradient doped diamond under a set temperature and pressure; S105, putting the obtained boron gradient doped diamond crystal into hot sulfuric acid and nitric acid with a volume ratio of 3:1 for post-treatment to obtain a purified boron gradient doped diamond substrate.
6. The method of claim 4, wherein the boron gradient doped diamond homojunction based self-driven UV detector is prepared by the steps of: Step S2 specifically comprises: S201, spin coating photoresist on the boron gradient doped diamond substrate, spin coating time 60s, spin coating speed 5000r / s; S202, heating the boron gradient doped diamond substrate with spin-coated photoresist at 115℃; S203, using a laser direct writing photoetching machine, exposure treatment is performed on the electrode shape setting positions of the region with lower boron doping concentration and the region with higher boron doping concentration, wherein the exposure parameter is set to 185 mj / cm 2 ; S204, heating the boron gradient doped diamond substrate after exposure treatment at 115℃; S205, then removing the exposed photoresist in TMAH solution to form an electrode shape on the boron gradient doped diamond substrate; then rinsing the residual developer with deionized water, and finally blowing dry with nitrogen.
7. The method for preparing a self-driven ultraviolet detector based on a boron gradient doped diamond homojunction according to claim 4, characterized in that: Step S3 specifically comprises: S301, transferring the cleaned boron gradient doped diamond substrate to a magnetron sputtering vacuum chamber; S302, after vacuumizing the magnetron sputtering vacuum chamber, sputtering titanium and gold for 3min and 5min respectively to form a titanium-gold electrode on the electrode shape area of the boron gradient doped diamond substrate.
8. The method of claim 4, wherein the boron gradient doped diamond homojunction based self-driven UV detector is prepared by the steps of: In step S4, the method for stripping the photoresist is: placing the boron gradient doped diamond substrate with sputtered titanium-gold electrode in acetone, soaking for 5 minutes, and placing in ethanol solution for 30s to strip the photoresist. 9. The method for preparing a self-driven ultraviolet detector based on a boron gradient-doped diamond homojunction according to claim 5, characterized in that: The temperature for growing the boron gradient doped diamond is 1600℃, the pressure is 5GPa, and the time is 5h.
10. The preparation method of the self-driven ultraviolet detector based on a boron gradient doped diamond homojunction according to claim 5, the mass ratio of high-purity graphite to high-purity amorphous boron powder is 10:1.