Composite material and preparation method thereof, photoelectric device and display device

Abstract

The invention discloses a composite material and a preparation method thereof, a photoelectric device and a display device, and relates to the technical field of display. The composite material comprises inorganic particles and polymer functionalized MXene. When the inorganic particles are luminescent materials, the polymer functionalized MXene can improve the fluorescence quantum yield of the luminescent materials; when the inorganic particles are carrier functional materials, the polymer functionalized MXene can improve the transmission efficiency of carriers; the composite material provided by the invention has relatively high stability and photoelectric property.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a composite material and a preparation method thereof, an optoelectronic device and a display device. BACKGROUND

[0002] The traditional structure of the optoelectronic device generally comprises an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode. Under the action of an electric field, the holes generated by the anode of the light-emitting diode and the electrons generated by the cathode move and are injected into the hole transport layer and the electron transport layer, respectively, and finally migrate to the light-emitting layer. When the two meet in the light-emitting layer, energy excitons are generated, thereby exciting light-emitting molecules to finally produce visible light.

[0003] At present, the performance of the material constituting the functional layer of the optoelectronic device is poor, which affects the light-emitting efficiency of the optoelectronic device. SUMMARY

[0004] Therefore, the present application provides a composite material and a preparation method thereof, an optoelectronic device and a display device.

[0005] The present application is implemented in the following manner. A composite material comprises inorganic particles and polymer functionalized MXene.

[0006] Correspondingly, the present application also provides a preparation method of the composite material, comprising the following steps:

[0007] providing polymer functionalized MXene and inorganic particles;

[0008] mixing the polymer functionalized MXene and the inorganic particles to obtain the composite material.

[0009] Correspondingly, the present application also provides an optoelectronic device, comprising an anode, a functional layer and a cathode which are sequentially stacked; wherein the material of the functional layer comprises the above-mentioned composite material or the composite material prepared by the above-mentioned preparation method.

[0010] Correspondingly, the present application also provides a display device comprising the above-mentioned optoelectronic device.

[0011] The composite material provided by the present application has high stability and optoelectronic performance. BRIEF DESCRIPTION OF DRAWINGS

[0012] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0013] Figure 1 is a schematic diagram of a composite material provided by an embodiment of the present application;

[0014] Figure 2 is a flow chart of a preparation method of a composite material provided by an embodiment of the present application;

[0015] Figure 3 is a structural schematic diagram of an optoelectronic device provided by an embodiment of the present application;

[0016] Figure 4 is an SEM diagram of a composite material provided by embodiment 1 of the present application.

[0017] Reference signs:

[0018] Composite material 11; inorganic particles 12; polymer functionalized Mxene 13;

[0019] Optoelectronic device 100; anode 10; hole functional layer 20; light emitting layer 30; electron functional layer 40; cathode 50. DETAILED DESCRIPTION

[0020] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application. In addition, it should be understood that the specific embodiments described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0021] In the present application, the orientation words such as "up" and "down" used without the opposite description generally refer to the up and down in the actual use or working state of the device, specifically the direction of the drawing surface in the drawings; and "inner" and "outer" refer to the outline of the device. In addition, in the description of the present application, the term "comprising" means "including but not limited to". The words first, second, third, etc. are only used as labels and do not impose numerical requirements or establish sequences.

[0022] In the present application, "and / or" describes the association relationship of the associated objects, which means that there can be three kinds of relationships, for example, A and / or B, which can represent the following cases: A exists alone, A and B exist together, and B exists alone. Wherein A and B can be singular or plural.

[0023] In the present application, "at least one" means one or more, and "multiple" means two or more. "One or more", "at least one of the following (one)", or the like, means any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c", or "at least one of a, b, and c", can mean a, b, c, a-b (i.e. a and b), a-c, b-c, or a-b-c, where a, b, and c can be single or multiple.

[0024] Various embodiments of the present application can exist in the form of a range; it should be understood that the description in the form of a range is only for the convenience and brevity, and should not be understood as a hard limit on the scope of the present application; therefore, it should be considered that the described range has specifically disclosed all possible sub-ranges and single values within the range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the described range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. In addition, whenever a numerical range is indicated in this document, it refers to any cited number (fraction or integer) within the indicated range.

[0025] Quantum dots are commonly used as light-emitting layer materials in optoelectronic devices. Currently, the photoluminescence quantum yield (PLQY) of quantum dots is low, partly due to the loss of carriers and non-radiative decay, which limits the brightness and energy efficiency of quantum dots in practical applications. In order to improve the stability and biocompatibility of quantum dots, organic encapsulating materials are usually used, however, some organic encapsulating materials may decompose, fade, etc. under long-term use or high temperature environment, affecting the performance and life of quantum dots. Inorganic semiconductor materials such as zinc oxide and nickel oxide are commonly used as carrier functional layer materials in optoelectronic devices. Currently, the carrier mobility of carrier functional layer materials is low, and the dispersion and stability are poor, which need to be further improved.

[0026] The technical solutions of the present application are as follows:

[0027] In the first aspect, referring to Figure 1 The embodiments of the present application provide a composite material 11, which comprises inorganic particles 12 and polymer functionalized MXene 13.

[0028] It should be noted that MXene is composed of several atomic layers of transition metal carbide, nitride or carbonitride, and is a kind of two-dimensional inorganic compound in material science. MXene material has high electron mobility and conductivity, and can be used as an electron transport channel to transport electrons generated by quantum dots to an external circuit or a collection electrode. As the name implies, polymer functionalized MXene 13 is a polymer modified MXene, and the polymer modified MXene can further improve the dispersibility, compatibility and stability of the MXene.

[0029] In some embodiments, the inorganic particles 12 include a light-emitting material including quantum dots or a carrier functional material including N-type semiconductor particles or P-type semiconductor particles.

[0030] The composite material 11 provided in the present application, when the inorganic particles 12 are a light-emitting material, the polymer functionalized MXene 13 can promote the transfer of charges between the light-emitting materials, improve the collection efficiency of charges and the PLQY of the light-emitting materials; the energy level structure of the MXene in the polymer functionalized MXene 13 can be coupled with the light-emitting materials, so as to adjust the energy level position and band edge structure of the light-emitting materials, and realize the luminance and color saturation tunable of the light-emitting materials; the polymer functionalized MXene 13 can prevent the light-emitting materials from aggregating in solvents or environments, thereby enhancing the photoluminescence performance and stability of the light-emitting materials, and the composite material 11 has good dispersibility and fluidity, facilitating processing and preparation.

[0031] When the inorganic particles 12 are a carrier functional material, the polymer functionalized MXene 13 can improve the dispersibility and stability of the carrier functional material, and improve its compatibility in various substrates and solvents; the polymer functionalized MXene 13 material has good conductivity, which can provide more conductive paths and improve the transport efficiency of carriers; the polymer functionalized MXene 13 can also enhance the stability of the interface, improve the compatibility and adhesion with other materials, reduce interface defects and resistance, and improve reliability and stability; the introduction of the polymer in the polymer functionalized MXene 13 can also adjust the energy band structure, electron affinity and light absorption properties of the carrier functional material, and optimize the photoelectric performance.

[0032] The polymer in the polymer functionalized MXene 13 also has a photosensitive effect, which can be used for micro-lithography process to miniaturize the optoelectronic device and improve the precision.

[0033] It should be noted that the N-type semiconductor particles refer to materials known in the art for use in the electron functional layer 40, the P-type semiconductor particles refer to materials known in the art for use in the hole functional layer 20, and the quantum dots refer to materials known in the art for use in the light-emitting layer 30.

[0034] In some embodiments, the mass ratio of the inorganic particles 12 and the polymer functionalized MXene 13 is 1:(5-10), which can be 1:5.5, 1:6, 1:6.5, 1:7, 1:7.5, 1:8, 1:8.5, 1:9, 1:9.5, etc. Within the range of the mass ratio, the dispersibility and stability of the composite material 11 are improved, and the electrical and optical properties of the composite material 11 are improved.

[0035] Specifically, when the inorganic particles 12 are quantum dots, the polymer functionalized MXene 13 can improve the PLQY, stability, and safety of the quantum dots. When the inorganic particles 12 are carrier functional materials, the polymer functionalized MXene 13 can improve the carrier migration rate of the carrier functional materials.

[0036] In some embodiments, the polymer functionalized MXene 13 includes a multi-layered MXene and a polymer film on the surface of the MXene.

[0037] Further, the polymer film is coated on the surface of the MXene.

[0038] In some embodiments, the MXene includes one or more of Ti3C2, Ti3C2T x , Nb2C, V2C, Cr2C, Cr2N, and Cr2O2.

[0039] In some embodiments, the material of the polymer film includes a polymer, which includes one or more of a polyacid, a polyol, a polyolefin, a polyamine, and a polyester.

[0040] It should be noted that the polymer provided in the present application has different functional groups, which can achieve closer connection with the MXene, and the functional groups can form different types of chemical bonds with the surface of the MXene; for example, the carboxyl group in the polyacid can form a coordination bond with the metal atoms on the surface of the MXene, and the hydroxyl group in the polyol can form a hydrogen bond; such diversity makes the polymer functionalized MXene 13 have higher flexibility and adjustability.

[0041] The polymer provided in the present application has good compatibility and dispersibility, which can more effectively cover the surface of the MXene and prevent its agglomeration, thereby improving the uniform dispersibility of the composite material in optoelectronic devices.

[0042] The polymer provided by the application also has good electronic and ionic transmission performance; for example, polyolefins help to improve the electronic transmission performance of MXene due to their unique electronic structure; and polyesters and polyamines can adjust the ionic transmission performance of MXene by affecting the charge distribution and polarity of the surface of MXene.

[0043] Further, the polyacids include one or more of polyacrylic acid, polystyrene sulfonic acid, and polylactic acid.

[0044] The polyalcohols include polyvinyl alcohol.

[0045] The polyolefins include polystyrene.

[0046] The polyamines include one or more of polyethyleneimine and polyacrylamide.

[0047] The polyesters include one or more of polydimethylaminoethyl methacrylate and polymethyl methacrylate.

[0048] Illustratively, the polymer functionalized MXene 13 includes polyvinyl alcohol functionalized Ti3C2T x polyacrylic acid functionalized Ti3C2T x polystyrene functionalized Ti3C2T x polyethyleneimine functionalized Ti3C2T x polydimethylaminoethyl methacrylate functionalized Ti3C2T x polystyrene sulfonic acid functionalized Ti3C2T x polylactic acid functionalized Ti3C2T x polyacrylamide functionalized Ti3C2T x polymethyl methacrylate functionalized Ti3C2T xone or more of polyvinyl functionalized Ti3C2, polyacrylic functionalized Ti3C2, polystyrene functionalized Ti3C2, polyethyleneimine functionalized Ti3C2, polydimethylaminoethyl methacrylate functionalized Ti3C2, polystyrene sulfonic acid functionalized Ti3C2, polylactic acid functionalized Ti3C2, polyacrylamide functionalized Ti3C2, polymethyl methacrylate functionalized Ti3C2, polyvinyl functionalized V2C, polyacrylic functionalized V2C, polystyrene functionalized V2C, polyethyleneimine functionalized V2C, polydimethylaminoethyl methacrylate functionalized V2C, polystyrene sulfonic acid functionalized V2C, polylactic acid functionalized V2C, polyacrylamide functionalized V2C, polymethyl methacrylate functionalized V2C, polyvinyl functionalized Nb2C, polyacrylic functionalized Nb2C, polystyrene functionalized Nb2C, polyethyleneimine functionalized Nb2C, polydimethylaminoethyl methacrylate functionalized Nb2C, polystyrene sulfonic acid functionalized Nb2C, polylactic acid functionalized Nb2C, polyacrylamide functionalized Nb2C, polymethyl methacrylate functionalized Nb2C, polyvinyl functionalized Cr2CT2, polyacrylic functionalized Cr2CT2, polystyrene functionalized Cr2CT2, polyethyleneimine functionalized Cr2CT2, polydimethylaminoethyl methacrylate functionalized Cr2CT2, polystyrene sulfonic acid functionalized Cr2CT2, polylactic acid functionalized Cr2CT2, polyacrylamide functionalized Cr2CT2, polymethyl methacrylate functionalized Cr2CT2, polyvinyl functionalized Cr2NO2, polyacrylic functionalized Cr2NO2, polystyrene functionalized Cr2NO2, polyethyleneimine functionalized Cr2NO2, polydimethylaminoethyl methacrylate functionalized Cr2NO2, polystyrene sulfonic acid functionalized Cr2NO2, polylactic acid functionalized Cr2NO2, polyacrylamide functionalized Cr2NO2, polymethyl methacrylate functionalized Cr2NO2.

[0049] In some embodiments, the polymer and the MXene are connected by one or more of covalent bond, non-covalent bond; the non-covalent bond includes one or more of electrostatic interaction, van der Waals force, π-π stacking.

[0050] In some embodiments, in the polymer functionalized MXene 13, the mass ratio of the polymer and the MXene is (1-5): 1, which can be 1.5:1, 2:1, 2.5:1, 3:1, 3.5:1, 4:1, 4.5:1, etc. Within the range of the mass ratio, the improvement of the performance of the polymer on the MXene is conducive to the improvement of the compatibility, stability, etc. of the composite material.

[0051] In some embodiments, the polymer has a degree of polymerization of 2-10; for example, it can be 3, 4, 5, 6, 7, 8, 9, etc. Within the range of the degree of polymerization, the polymer can sufficiently improve the dispersibility, stability, and compatibility of MXene, and further improve the performance of the composite material.

[0052] In some embodiments, the MXene is a sheet MXene.

[0053] In some embodiments, the sheet MXene has an average thickness of 0.001 μm-1 μm; for example, it can be 0.002 μm, 0.005 μm, 0.008 μm, 0.01 μm, 0.02 μm, 0.03 μm, 0.04 μm, 0.05 μm, 0.06 μm, 0.07 μm, 0.08 μm, 0.09 μm, 0.1 μm, 0.2 μm, 0.3 μm, 0.4 μm, 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm, etc.

[0054] In some embodiments, the sheet MXene has an average sheet diameter of 5 μm-50 μm; for example, it can be 5 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, etc.

[0055] In some embodiments, the sheet MXene has an average specific surface area of 5 m 2 / g-50 m 2 / g; for example, it can be 10 m 2 / g, 15 m 2 / g, 20 m 2 / g, 25 m 2 / g, 30 m 2 / g, 35 m 2 / g, 40 m 2 / g, 45 m 2 / g, etc.

[0056] Thus, under the size conditions of the sheet MXene, the polymer is beneficial to the modification of the MXene, improves the performance of the polymer functionalized MXene 13, and further improves the stability of the composite material 11.

[0057] In some embodiments, the polymer film has a thickness of 5 nm-20 nm; for example, it can be 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, etc.

[0058] In some embodiments, in the composite material 11, the inorganic particles 12 and the polymer functionalized MXene 13 are connected by one or more of covalent bond, non-covalent bond; the non-covalent bond includes one or more of electrostatic interaction, van der Waals force, π-π stacking. Specifically, the inorganic particles 12 are connected with the polymer in the polymer functionalized MXene 13.

[0059] In some embodiments, in the composite material 11, the polymer functionalized MXene 13 has a sheet structure, and the inorganic particles 12 are located in the gap of the sheet structure.

[0060] Further, the polymer functionalized MXene 13 includes a multi-layer sheet MXene and a polymer film on the surface of the sheet MXene, and the multi-layer sheet MXene is stacked to form the sheet structure, and the material of the polymer film includes a polymer. The inorganic particles are located between adjacent polymer films, and the inorganic particles are connected with the polymer of the polymer film. The polymer functionalized MXene 13 has good electrical conductivity and layered structure, can provide more conductive paths, improve the transmission efficiency of carriers, significantly improve the electrical conductivity of the composite material 11, reduce the resistance, and improve the current density. By using the interaction between the polymer in the polymer functionalized MXene 13 and the surface of the inorganic particles 12, the inorganic particles 12 enter the gap of the sheet structure through covalent or non-covalent bonding, and the polymer film of the adjacent sheet structure can wrap the inorganic particles 12. The polymer can change the surface energy level and band structure of the inorganic particles 12, regulate the distribution of electronic energy level, and thus improve the dispersibility and stability of the inorganic particles 12, and at the same time adjust the interaction between the inorganic particles 12 and the surrounding environment, and improve the performance of the inorganic particles 12.

[0061] In some embodiments, the average particle size of the inorganic particles 12 is 1 nm to 20 nm, for example, it can be 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, etc.

[0062] Further, the average particle size of the light emitting material is 1 nm to 20 nm, for example, it can be 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, etc. The average particle size of the carrier functional material is 1 nm to 10 nm, for example, it can be 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, etc.

[0063] In some embodiments, the quantum dots are selected from, but not limited to, one or more of single-structure quantum dots, core-shell quantum dots, and perovskite quantum dots.

[0064] The materials of the single-structure quantum dots, the core materials of the core-shell quantum dots, and the shell materials of the core-shell quantum dots can be selected from, but not limited to, one or more of II-VI compounds, IV-VI compounds, III-V compounds, and I-III-VI compounds, respectively. The shell of the core-shell quantum dots comprises one or more layers. The II-VI compounds can be selected from, but not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI compounds can be selected from, but not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe. The III-V compounds can be selected from, but not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI compounds can be selected from, but not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0065] As an example, the core-shell structure quantum dot can be selected from, but not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS. The " / " in the above expressions such as "CdSe / ZnS" means that the substance after " / " (as a shell layer) coats the substance before " / " (as a core layer).

[0066] The perovskite quantum dot can be selected from, but not limited to, a doped or non-doped inorganic perovskite semiconductor, or an organic-inorganic hybrid perovskite semiconductor. The inorganic perovskite semiconductor has a general structure of AMX3, wherein A is a Cs + ion, M is a divalent metal cation selected from one or more of Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2 + X is a halide anion selected from one or more of Cl - , Br - , I - . The organic-inorganic hybrid perovskite semiconductor has a general structure of BMX3, wherein B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ wherein n≥2, M is a divalent metal cation selected from one or more of Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ X is a halide anion selected from one or more of Cl - , Br - , I- one or more of the following: a first doped metal oxide particle, a first undoped metal oxide particle, a Group IIB-VIA semiconductor material, a Group IIIA-VA semiconductor material, and a Group IB-IIIA-VIA semiconductor material.

[0067] In some embodiments, the N-type semiconductor particles include one or more of the following: a first doped metal oxide particle, a first undoped metal oxide particle, a Group IIB-VIA semiconductor material, a Group IIIA-VA semiconductor material, and a Group IB-IIIA-VIA semiconductor material, the first undoped metal oxide particle includes one or more of the following: ZnO, TiO2, SnO2, ZrO2, Ta2O5, the metal oxide in the first doped metal oxide particle includes one or more of the following: ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3, the doping element in the first doped metal oxide particle includes one or more of the following: Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, the Group IIB-VIA semiconductor material includes one or more of the following: ZnS, ZnSe, CdS, the Group IIIA-VA semiconductor material includes one or more of the following: InP, GaP, and the Group IB-IIIA-VIA semiconductor material includes one or more of the following: CuInS, CuGaS.

[0068] In some embodiments, the P-type semiconductor particles include one or more of the following: a second doped metal oxide particle, a second undoped metal oxide particle, a metal sulfide, a metal selenide, and a metal nitride, the metal oxide in the second doped metal oxide particle and the metal oxide in the second undoped metal oxide particle each independently includes one or more of the following: MoO3, WO3, NiO, CrO3, CuO, V2O5, the doping element in the second doped metal oxide particle includes one or more of the following: Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of the following: CuS, MoS3, WS3, the metal selenide includes one or more of the following: MoSe3, WSe3, and the metal nitride includes P-type gallium nitride.

[0069] In a second aspect, referring to Figure 2 The embodiments of the present application also provide a preparation method of the composite material 11, including the following steps:

[0070] S11, providing polymer functionalized MXene 13 and inorganic particles 12;

[0071] S12, first mixing the polymer functionalized MXene 13 and the inorganic particles 12 to obtain the composite material 11.

[0072] In the S11,

[0073] In some embodiments, the method for preparing the polymer functionalized MXene 13 comprises:

[0074] S111, providing a polymer solution and a MXene, the polymer solution comprising a polymer;

[0075] S112, second mixing the polymer solution and the MXene to obtain the polymer functionalized MXene 13.

[0076] In some embodiments, the polymer solution further comprises a first solvent, the first solvent comprising one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, phenylacetone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

[0077] In some embodiments, the second mixing of the polymer solution and the MXene comprises dip-coating the polymer solution on the surface of the MXene, or stirring the MXene in the polymer solution.

[0078] In some embodiments, the second mixing of the polymer solution and the MXene is performed at a temperature of 25-100°C, such as 30°C, 35°C, 40°C, 45°C, 50°C, 55°C, 60°C, 65°C, 70°C, 75°C, 80°C, 85°C, 90°C, 95°C, etc., and for a time period of 5-120 minutes, such as 10 minutes, 15 minutes, 20 minutes, 25 minutes, 30 minutes, 35 minutes, 40 minutes, 45 minutes, 50 minutes, 55 minutes, 60 minutes, 65 minutes, 70 minutes, 75 minutes, 80 minutes, 85 minutes, 90 minutes, 95 minutes, etc. In this way, the second mixing is performed under conditions that are conducive to the modification of the MXene by the polymer and to the improvement of the yield and performance of the polymer functionalized MXene.

[0079] In some embodiments, the polymer solution has a mass fraction of the polymer of 0.1-10 wt%, such as 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, etc. The mass fraction is within a range that is conducive to the uniform dissolution and dispersion of the polymer.

[0080] In some embodiments, the mass ratio of the polymer to the MXene is (1-5):1, for example, 1.5:1, 2:1, 2.5:1, 3:1, 3.5:1, 4:1, 4.5:1, etc. Within this mass ratio range, the polymer can improve the properties of the MXene, thereby improving the compatibility, stability, and other properties of the composite material.

[0081] It should be noted that the polymer can be coated on the surface of the MXene. Before obtaining the composite material 11, the first solvent can be removed by centrifugation or drying to obtain a powder of the polymer-functionalized MXene 13. It should be noted that from a microscopic perspective, the MXene still has a lamellar structure. From a macroscopic perspective, the preparation of the polymer-functionalized MXene 13 into a powder undergoes a physical morphological change rather than a chemical structural change, and the powder appears macroscopically as a discrete aggregate of particles.

[0082] In said S12:

[0083] In some embodiments, the mass ratio of the inorganic particles 12 to the polymer functionalized MXene 13 is 1:(5-10), for example, 1:5.5, 1:6, 1:6.5, 1:7, 1:7.5, 1:8, 1:

[0084] 8.5, 1:9, 1:9.5, etc. Within the mass ratio range, it is beneficial to improve the dispersibility and stability of the composite material 11, as well as improve the electrical and optical properties of the composite material 11.

[0085] In some embodiments, the first mixing of the polymer-functionalized MXene 13 and the inorganic particles 12 includes: providing the polymer-functionalized MXene 13, the inorganic particles 12, and a second solvent, performing a first mixing to obtain a mixed solution.

[0086] In some embodiments, the mass concentration of the inorganic particles 12 in the mixed solution is 10 mg / mL to 50 mg / mL, for example, 15 mg / mL, 20 mg / mL, 25 mg / mL, 30 mg / mL, 35 mg / mL, 40 mg / mL, 45 mg / mL, etc. Within this mass concentration range, the inorganic particles 12 are facilitated to be uniformly dispersed.

[0087] In some embodiments, the second solvent comprises one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

[0088] In some embodiments, the first mixing is at a temperature of 30-100℃, for example, 40℃, 50℃, 60℃, 70℃, 80℃, 90℃, etc., and for a time of 10-30min, for example, 12min, 15min, 18min, 20min, 22min, 25min, 28min, etc. In this way, under the conditions of the first mixing, the polymer functionalized MXene 13 and the inorganic particles 12 interact to form the composite material 11.

[0089] Specifically, when the MXene layers and the polymer react, the polymer is in-situ polymerized on the surface of the MXene layers, and a layer of polymer film is formed on the surface of each MXene layer. When the polymer functionalized MXene 13 and the inorganic particles 12 react, due to the small size of the inorganic particles 12, the inorganic particles 12 can interact with the polymer film on the MXene layers by physical adsorption or chemical bonding, and enter the gap between adjacent MXene layers. In this process, the long-chain structure of the polymer can fix the inorganic particles 12 in the gap between the MXene layers, and the polymer film of the adjacent MXene layers can close the inorganic particles 12 in the gap between the MXene layers by extrusion, so that the inorganic particles 12 are completely located in the inner cavity formed by the adjacent two layers of polymer film, and the performance improvement effect of the inorganic particles 12 is fully improved.

[0090] In some embodiments, after obtaining the mixed solution, the method further includes drying. The drying can remove the second solvent to obtain the composite material 11.

[0091] In some embodiments, after removing the second solvent from the mixed solution, the method further includes post-treatment. Further, the post-treatment includes heat treatment, sintering treatment, etc. The post-treatment can improve the smoothness of the surface of the composite material 11.

[0092] For example, the heat treatment is at a temperature of 100-200℃, for example, 110℃, 120℃, 130℃, 140℃, 150℃, 160℃, 170℃, 180℃, 190℃, etc., and for a time of 3-5h, for example, 3.2h, 3.5h, 3.8h, 4h, 4.2h, 4.5h, 4.8h, etc.

[0093] The method for preparing the composite material 11 provided in the present application is simple to operate, and MXene and polymer are widely available and low in cost, so that the high-performance composite material 11 can be effectively prepared.

[0094] In a third aspect, please refer to Figure 3The embodiment of the present application also provides an optoelectronic device 100, comprising an anode 10, a functional layer and a cathode 50 which are sequentially stacked; wherein the material of the functional layer comprises the composite material 11 or the composite material 11 prepared by the preparation method.

[0095] In the optoelectronic device 100 provided by the present application, the composite material 11 is applied to the functional layer of the optoelectronic device 100, which can enhance the interface stability of the functional layer and other film layers, improve the compatibility and adhesion between materials, help to reduce the interface defects and resistance, and improve the reliability and stability of the device; the composite material 11 also helps to optimize the photoelectric performance of the device, reduce the resistance, and improve the current density, thereby effectively improving the luminous efficiency and stability of the optoelectronic device 100 and prolonging the service life of the optoelectronic device 100.

[0096] In some embodiments, the functional layer comprises one or more of a hole functional layer 20, a light emitting layer 30 and an electron functional layer 40, the hole functional layer 20 is located between the anode 10 and the light emitting layer 30, and the electron functional layer 40 is located between the cathode 50 and the light emitting layer 30; the material of one or more of the hole functional layer 20, the light emitting layer 30 and the electron functional layer 40 comprises the composite material 11.

[0097] Specifically, in some embodiments, the material of the hole functional layer 20 comprises the composite material 11.

[0098] In yet some embodiments, the material of the light emitting layer 30 comprises the composite material 11.

[0099] In yet some embodiments, the material of the electron functional layer 40 comprises the composite material 11.

[0100] In yet some embodiments, the materials of the hole functional layer 20 and the light emitting layer 30 comprise the composite material 11.

[0101] In yet some embodiments, the materials of the hole functional layer 20 and the electron functional layer 40 comprise the composite material 11.

[0102] In yet some embodiments, the materials of the light emitting layer 30 and the electron functional layer 40 comprise the composite material 11.

[0103] In yet some embodiments, the materials of the hole functional layer 20, the light emitting layer 30 and the electron functional layer 40 comprise the composite material 11.

[0104] The hole functional layer 20 comprises one or more of a hole injection layer and a hole transport layer.

[0105] The electron functional layer 40 includes one or more of an electron injection layer, an electron transport layer.

[0106] In some embodiments, the thickness of the hole functional layer 20 is 20-50 nm, for example, can be 22 nm, 24 nm, 26 nm, 28 nm, 30 nm, 32 nm, 34 nm, 36 nm, 38 nm, 40 nm, 42 nm, 44 nm, 46 nm, 48 nm, etc.

[0107] In some embodiments, the thickness of the light emitting layer 30 is 20-50 nm, for example, can be 22 nm, 24 nm, 26 nm, 28 nm, 30 nm, 32 nm, 34 nm, 36 nm, 38 nm, 40 nm, 42 nm, 44 nm, 46 nm, 48 nm, etc.

[0108] In some embodiments, the thickness of the electron functional layer 40 is 20-50 nm, for example, can be 22 nm, 24 nm, 26 nm, 28 nm, 30 nm, 32 nm, 34 nm, 36 nm, 38 nm, 40 nm, 42 nm, 44 nm, 46 nm, 48 nm, etc.

[0109] It is understood that when the material of the hole functional layer 20 includes the composite material 11, the inorganic particles 12 in the composite material 11 are P-type semiconductor particles. When the material of the electron functional layer 40 and / or the light emitting layer 30 includes the composite material 11, the material of the hole functional layer 20 can be one or more of the composite material 11, an organic P-type semiconductor material, P-type semiconductor particles, the organic P-type semiconductor material including 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-di(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green light emitting material, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butyphenyl)diphenylamine)], poly(4-butylphenyl-diphenylamine), poly[bi(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p)phenylenevinylene, poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbiphenylamine, PEDOT, PEDOT:PSS and derivatives thereof, derivatives of PEDOT:PSS doped with s-MoO3, poly(N-vinylcarbazole) and derivatives thereof, polymethacrylate and derivatives thereof, poly(9,9-octylfluorene) and derivatives thereof, poly(spirofluorene) and derivatives thereof, N,N'-di(naphthalen-1-yl)-N,N'-diphenylbenzidine, spiro NPB, microcrystalline cellulose, and one or more of tetracyanoquinodimethane.

[0110] When the material of the light-emitting layer 30 comprises the composite material 11, the inorganic particles 12 in the composite material 11 are quantum dots. When the material of the hole functional layer 20 and / or the electron functional layer 40 comprises the composite material 11, the material of the light-emitting layer 30 can be one or several of the composite material 11, an organic light-emitting material, quantum dots. The organic light-emitting material can be selected from, but not limited to, one or several of CBP:Ir(mppy)3 (4,4'-bis(N-carbazole)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine iridium (III)], TCTX:Ir(mmpy) (4,4',4"-tris(carbazole-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine iridium], diaryl anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delayed) materials, polymers containing B-N covalent bonds, HLCT (hybrid localized charge transfer excited state) materials, Exciplex (excited complex) light-emitting materials.

[0111] When the material of the electron functional layer 40 comprises the composite material 11, the inorganic particles 12 in the composite material 11 are N-type semiconductor particles. When the material of the hole functional layer 20 and the light-emitting layer 30 comprises the composite material 11, the material of the electron functional layer 40 can be one or several of the composite material 11, an organic N-type semiconductor material, N-type semiconductor particles. The organic N-type semiconductor material comprises one or several of 8-hydroxyquinoline aluminum, 1,3,5-tris(1-phenyl-1H-benzimidazole-2-yl)benzene, 4,7-diphenyl-1,10-phenanthroline, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole, bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum, bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum, 2,2'-(1,3-phenyl)di[5-(4-tert-butylphenyl)-1,3,4-oxadiazole], tris[2,4,6-trimethyl-3-(3-pyridyl)phenyl]borane, tetra[(m-pyridyl)-phen-3-yl]biphenyl, 3,3'-[5'-[3-(3-pyridyl)phenyl][1,1':3',1"-terphenyl]-3,3"-diyl]dipyridine, 1,3-bis(3,5-dipyridin-3-ylphenyl)benzene, n,n'-bis(naphthalen-1-yl)-n,n'-bis(phenyl)benzidine.

[0112] In some embodiments, the anode 10 and the cathode 50 each independently comprise one or more of a metal, a carbon material, and a metal oxide; the metal comprises one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material comprises one or more of graphite, carbon nanotube, graphene, and carbon fiber; and the metal oxide comprises a metal oxide electrode or a composite electrode with a metal disposed between doped or undoped transparent metal oxides, the material of the metal oxide electrode comprises one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO, and the composite electrode comprises one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. Herein, " / " represents a stacked structure, for example, AZO / Ag / AZO represents a composite electrode comprising an AZO layer, an Ag layer, and an AZO layer stacked in sequence.

[0113] In some embodiments, the optoelectronic device 100 comprises a light-emitting diode.

[0114] In a fourth aspect, the embodiments of the present application further provide a display device, which comprises the above-mentioned optoelectronic device 100.

[0115] The display device can be any electronic product with a display function, including but not limited to a smart phone, a tablet computer, a notebook computer, a digital camera, a digital camcorder, a smart wearable device, a smart weighing electronic scale, a vehicle-mounted display, a television, or an e-book reader, wherein the smart wearable device can be a smart bracelet, a smart watch, a virtual reality (VR) headset, etc.

[0116] The present application will be described in detail below through specific embodiments, and the following embodiments are only part of the embodiments of the present application, and are not a limitation of the present application.

[0117] Embodiment 1

[0118] The present embodiment provides a composite material comprising quantum dots CdSeS and polyvinyl alcohol functionalized Ti3C2T x , and the preparation method is as follows:

[0119] A sheet of Ti3C2T x is provided, and a polyvinyl alcohol solution with a mass fraction of 5wt% is dip-coated on the surface of the Ti3C2T x , and the polyvinyl alcohol is combined with the Ti3C2T xpolyvinyl alcohol functionalized Ti3C2T x polyvinyl alcohol functionalized Ti3C2T x ;

[0120] A CdSeS quantum dot solution with a mass concentration of 25 mg / mL was provided, and the polyvinyl alcohol functionalized Ti3C2T x was added into the CdSeS quantum dot solution, and the mass ratio of the CdSeS quantum dots to the polyvinyl alcohol functionalized Ti3C2T x was 1:7.5. The reaction was stirred at 60°C for 20 min to obtain a composite material.

[0121] Example 2

[0122] This example is basically the same as Example 1, except that in this example, the polyvinyl alcohol is replaced by polyacrylic acid, the polyvinyl alcohol functionalized Ti3C2T x is replaced by polyacrylic acid functionalized Ti3C2T x .

[0123] Example 3

[0124] This example is basically the same as Example 1, except that in this example, the polyvinyl alcohol is replaced by polyethyleneimine, the polyvinyl alcohol functionalized Ti3C2T x is replaced by polyethyleneimine functionalized Ti3C2T x .

[0125] Example 4

[0126] This example is basically the same as Example 1, except that in this example, the Ti3C2T x is replaced by Cr2CT2, and the polyvinyl alcohol functionalized Ti3C2T x is replaced by polyethyleneimine functionalized Cr2CT2.

[0127] Example 5

[0128] This example is basically the same as Example 1, except that in this example, the quantum dots CdSeS are replaced by quantum dots ZnSe.

[0129] Example 6

[0130] This example is basically the same as Example 1, except that in this example, the mass ratio of the CdSeS quantum dots to the polyvinyl alcohol functionalized Ti3C2T x is 1:10.

[0131] Example 7

[0132] The present embodiment is basically the same as embodiment 1, the only difference being that the mass ratio of CdSeS quantum dots to polyvinyl alcohol functionalized Ti3C2T x in the present embodiment is 1:5.

[0133] Embodiment 8

[0134] The present embodiment is basically the same as embodiment 1, the only difference being that the reaction temperature of CdSeS quantum dots to polyvinyl alcohol functionalized Ti3C2T x in the present embodiment is 100℃.

[0135] Embodiment 9

[0136] The present embodiment is basically the same as embodiment 1, the only difference being that the reaction temperature of CdSeS quantum dots to polyvinyl alcohol functionalized Ti3C2T x in the present embodiment is 30℃.

[0137] Embodiment 10

[0138] The present embodiment is basically the same as embodiment 1, the only difference being that the mass ratio of polyvinyl alcohol to Ti3C2T x in the present embodiment is 5:1.

[0139] Embodiment 11

[0140] The present embodiment is basically the same as embodiment 1, the only difference being that the mass ratio of polyvinyl alcohol to Ti3C2T x in the present embodiment is 1:1.

[0141] Embodiment 12

[0142] The present embodiment provides a composite material comprising N-type semiconductor particles ZnO and polyvinyl alcohol functionalized Ti3C2T x , and a preparation method thereof is as follows:

[0143] Providing a Ti3C2T x layer, immersing a polyvinyl alcohol solution with a mass fraction of 5wt% on the surface of the Ti3C2T x , the mass ratio of polyvinyl alcohol to Ti3C2T x is 2.5:1, forming polyvinyl alcohol functionalized Ti3C2T x coated with Ti3C2T x ;

[0144] Providing an ethanol dispersion of ZnO with a mass concentration of 25mg / mL, adding the polyvinyl alcohol functionalized Ti3C2T x to the ethanol dispersion of ZnO, the mass concentration of ZnO in the ethanol dispersion of ZnO is 25mg / mL, and the mass concentration of polyvinyl alcohol functionalized Ti3C2T xThe mass ratio of the N-type semiconductor particles ZnO and the polyvinyl alcohol functionalized Ti3C2T

[0145] Example 13

[0146] This example is basically the same as example 12, except that in this example the polyvinyl alcohol is replaced by polyacrylic acid, and the polyvinyl alcohol functionalized Ti3C2T x is replaced by polyacrylic acid functionalized Ti3C2T x .

[0147] Example 14

[0148] This example is basically the same as example 12, except that in this example the polyvinyl alcohol is replaced by polyethyleneimine, and the polyvinyl alcohol functionalized Ti3C2T x is replaced by polyethyleneimine functionalized Ti3C2T x .

[0149] Example 15

[0150] This example is basically the same as example 12, except that in this example the Ti3C2T x is replaced by Cr2CT2, and the polyvinyl alcohol functionalized Ti3C2T x is replaced by polyethyleneimine functionalized Cr2CT2.

[0151] Example 16

[0152] This example is basically the same as example 12, except that in this example the N-type semiconductor particles ZnO are replaced by N-type semiconductor particles TiO2.

[0153] Example 17

[0154] This example is basically the same as example 12, except that in this example the mass ratio of the N-type semiconductor particles ZnO and the polyvinyl alcohol functionalized Ti3C2T x is 1:10.

[0155] Example 18

[0156] This example is basically the same as example 12, except that in this example the mass ratio of the N-type semiconductor particles ZnO and the polyvinyl alcohol functionalized Ti3C2T x is 1:5.

[0157] Example 19

[0158] This example provides a composite material comprising P-type semiconductor particles NiO and polyvinyl alcohol functionalized Ti3C2T x , which is prepared as follows:

[0159] Ti3C2T x A polyvinyl alcohol solution with a mass fraction of 5wt% was dip-coated on the Ti3C2T x surface, and the mass ratio of polyvinyl alcohol to Ti3C2T x was 2.5:1, forming polyvinyl alcohol-coated Ti3C2T x polyvinyl alcohol functionalized Ti3C2T x ;

[0160] An ethanol dispersion of NiO with a mass concentration of 25mg / mL was provided, and the polyvinyl alcohol functionalized Ti3C2T x ; an ethanol dispersion of NiO was added, and the mass ratio of the ethanol dispersion of NiO to the polyvinyl alcohol functionalized Ti3C2T x was 1:7.5, and the reaction was stirred at 60℃ for 20min to obtain a composite material.

[0161] Example 20

[0162] This example is basically the same as Example 19, except that in this example, polyvinyl alcohol is replaced by polyacrylic acid, and the polyvinyl alcohol functionalized Ti3C2T x is replaced by polyacrylic acid functionalized Ti3C2T x .

[0163] Example 21

[0164] This example is basically the same as Example 19, except that in this example, polyvinyl alcohol is replaced by polyethyleneimine, and the polyvinyl alcohol functionalized Ti3C2T x is replaced by polyethyleneimine functionalized Ti3C2T x .

[0165] Example 22

[0166] This example is basically the same as Example 19, except that in this example, Ti3C2T x is replaced by Cr2CT2, and the polyvinyl alcohol functionalized Ti3C2T x is replaced by polyethyleneimine functionalized Cr2CT2.

[0167] Example 23

[0168] This example is basically the same as Example 19, except that in this example, the P-type semiconductor particle NiO is replaced by an N-type semiconductor particle CuO.

[0169] Example 24

[0170] This example is substantially identical to Example 19, except that in this example the mass ratio of the P-type semiconductor particles NiO to the polyvinyl alcohol functionalized Ti3C2T x is 1 : 10.

[0171] Example 25

[0172] This example is substantially identical to Example 19, except that in this example the mass ratio of the P-type semiconductor particles NiO to the polyvinyl alcohol functionalized Ti3C2T x is 1 : 5.

[0173] Comparative Example 1

[0174] This comparative example provides a material comprising CdSeS quantum dots.

[0175] Comparative Example 2

[0176] This comparative example provides a material comprising ZnSe quantum dots.

[0177] Comparative Example 3

[0178] This comparative example is substantially identical to Example 1, except that in this comparative example the polyvinyl alcohol is replaced by polycatechol, and the polyvinyl alcohol functionalized Ti3C2T x is replaced by poly catechol functionalized Ti3C2T x .

[0179] Comparative Example 4

[0180] This comparative example provides a material comprising N-type semiconductor particles ZnO.

[0181] Comparative Example 5

[0182] This comparative example provides a material comprising N-type semiconductor particles TiO2.

[0183] Comparative Example 6

[0184] This comparative example provides a material comprising P-type semiconductor particles NiO.

[0185] Comparative Example 7

[0186] This comparative example provides a material comprising N-type semiconductor particles CuO.

[0187] The polyvinyl alcohol functionalized Ti3C2T x of Example 1 and the composite material were subjected to scanning electron microscope testing, and the SEM images are shown in Figure 4 , Figure 4 where the right side is a partial enlarged view of the left side.

[0188] From the SEM images, it can be seen that the polyvinyl alcohol functionalized Ti3C2T r of Example 1 and the composite material are both uniform and have a good dispersion.It can be seen that the inorganic particles are located in the gaps of the polymer-functionalized MXene layer structure, and the polymer-functionalized MXene includes the lamellae MXene and the polymer film covering the lamellae MXene.

[0189] The fluorescence quantum yield PLQY of the composite materials of Examples 1 to 11 and Comparative Examples 1 to 3 was tested on the first day of preparation and after 30 days of placement; the electron mobility of the composite materials of Examples 12 to 18 and Comparative Examples 4 to 5 was tested; and the hole mobility of the composite materials of Examples 19 to 25 and Comparative Examples 6 to 7 was tested. The results are shown in Table 1.

[0190] The fluorescence quantum yield (PLQY) was tested using a steady-state fluorescence spectrometer from Edinburgh Instruments. The instrument model was FS5, and the accessory for measuring the fluorescence quantum yield was SC-30.

[0191] The test method for carrier mobility (electron mobility / hole mobility) is as follows: the current density-voltage curve of the half device (single carrier transport thin film device HOD / EOD) of the photoelectric device is tested, wherein the structure of the EOD is anode / quantum dot light-emitting layer / electron transport layer / cathode, and the materials of the electron transport layer are respectively the composite materials of Examples 10 to 16 and Comparative Examples 4 to 5; the structure of the HOD is anode / hole transport layer / quantum dot light-emitting layer / cathode, and the materials of the hole transport layer are respectively the composite materials of Examples 17 to 23 and Comparative Examples 6 to 7; the space charge limited current (SCLC) region in the current density-voltage curve is obtained, and then according to the formula J=(9 / 8)ε r ε0μ e V 2 / d 3 Calculate the carrier mobility, where J represents the current density in mAcm -2 ; ε r represents the relative dielectric constant, ε0 represents the vacuum dielectric constant; μ e Indicates carrier mobility, in cm 2 V -1 s -1 ; V represents the driving voltage, the unit is V; d represents the film thickness, the unit is m.

[0192] Table 1

[0193]

[0194]

[0195] From Table 1 we can see that:

[0196] It can be obtained from Examples 1-11 and Comparative Examples 1-3 that the PLQY of the composite material can be significantly improved and the stability after 30 days can be improved by using polymer functionalized MXene to modify quantum dots, because the polymer functionalized MXene can change the surface energy level and band structure of the quantum dots, regulate the electronic energy level distribution, thereby affecting the photoelectric performance, and can improve the dispersibility and stability of the quantum dots; replacing the quantum dots, MXene, can make the PLQY of the composite material remain in a high range; within the range of the mass ratio of the preferred polymer and MXene, the mass ratio of the polymer functionalized MXene and the quantum dots, and the temperature of the reaction of the polymer functionalized MXene and the quantum dots provided in the application, the PLQY of the composite material provided in the application is more than 50% on the first day and is maintained at more than 45% after 30 days; it should be noted that, referring to Examples 1-3 and Comparative Example 3, the influence of different polymers in the polymer functionalized MXene on the performance of the entire composite material is relatively obvious, and the improvement effect of the polymer provided in the application on the composite material is significantly higher than that of poly catechol, because poly catechol is more prone to oxidative degradation under certain conditions than the polymers provided in the application, thereby reducing or even losing excellent performance, resulting in limited performance improvement effect on inorganic particles, and in Examples 1-3, polyethyleneimine has a relatively better improvement effect on the composite material;

[0197] It can be obtained from Examples 12-18 and Comparative Examples 4-5 that the electron migration performance of the composite material can be significantly improved by using polymer functionalized MXene to modify N-type semiconductor particles, because the introduction of the polymer chain in the polymer functionalized MXene can improve the dispersibility, stability and compatibility of the N-type semiconductor particles, significantly improve the electron transport performance, and adjust the electrical and optical performance; in particular, polyethyleneimine functionalized Ti3C2T x greatly improves the electron mobility of the N-type semiconductor particles;

[0198] It can be obtained from Examples 19-25 and Comparative Examples 6-7 that the hole migration performance of the composite material can be significantly improved by using polymer functionalized MXene to modify P-type semiconductor particles, and the polymer functionalized MXene material has good conductivity and layered structure, which provides more conductive paths for holes, enhances the conductivity, and thereby improves the transmission efficiency of the holes.

[0199] Device Example 1

[0200] The present embodiment provides a photoelectric device, and the preparation method is as follows:

[0201] The ITO conductive glass was cleaned with a cleaning agent to preliminarily remove the stains on the surface, and then sequentially cleaned in deionized water, acetone, anhydrous ethanol, and deionized water for 20 min each time by ultrasonic cleaning to remove the impurities on the surface. Finally, the ITO anode with a thickness of 75 nm was obtained by blowing dry with high-purity nitrogen.

[0202] The NiO was spin-coated on the ITO anode at a speed of 3000 rpm for 30 s, and baked at 150 ℃ for 20 min to form a hole transport layer with a thickness of 40 nm.

[0203] The composite material prepared in Example 1 was dissolved in n-octane solvent and spin-coated on the hole transport layer at a speed of 3000 rpm for 30 s, and baked at 100 ℃ for 5 min to form a light-emitting layer with a thickness of 30 nm.

[0204] The ZnO was dissolved in ethanol and spin-coated on the light-emitting layer at a speed of 4000 rpm for 30 s, and then baked at 80 ℃ for 10 min to form an electron transport layer with a thickness of 30 nm.

[0205] Ag was evaporated on the electron transport layer by thermal evaporation at a vacuum degree of not higher than 3x10 -4 Pa, a speed of 1 angstrom per second, and a time of 1000 s to form a cathode with a thickness of 100 nm.

[0206] Packaging to obtain a photoelectric device.

[0207] Device Examples 2-11

[0208] Device Examples 2-11 are basically the same as Device Example 1, except that the composite material of Example 1 is replaced by the composite material of Examples 2-11 in Device Examples 2-11.

[0209] Device Examples 12-18

[0210] Device Examples 12-18 are basically the same as Device Example 1, except that the material of the light-emitting layer in Device Examples 12-18 is CdSeS quantum dots without polyvinyl alcohol functionalized Ti3C2T x ; and the material of the electron transport layer is the composite material of Examples 12-18.

[0211] Device Examples 19-25

[0212] Device Examples 19-25 are basically the same as Device Example 1, except that the material of the light-emitting layer in Device Examples 19-25 is CdSeS quantum dots without polyvinyl alcohol functionalized Ti3C2T x ; and the material of the hole transport layer is the composite material of Examples 19-25.

[0213] Device Example 26

[0214] Device Example 26 is substantially identical to Device Example 1, except that in this device example, the material of the electron transport layer is the composite material of Example 12.

[0215] Device Example 27

[0216] Device Example 27 is substantially identical to Device Example 1, except that in this device example, the material of the hole transport layer is the composite material of Example 19.

[0217] Device Example 28

[0218] Device Example 28 is substantially identical to Device Example 1, except that in this device example, the material of the light-emitting layer is CdSeS quantum dots without polyvinyl alcohol functionalized Ti3C2T x ; the material of the electron transport layer is the composite material of Example 12, and the material of the hole transport layer is the composite material of Example 19.

[0219] Device Example 29

[0220] Device Example 29 is substantially identical to Device Example 1, except that in this device example, the material of the electron transport layer is the composite material of Example 12, and the material of the hole transport layer is the composite material of Example 19.

[0221] Device Comparative Example 1

[0222] Device Comparative Example 1 is substantially identical to Device Example 1, except that in Device Comparative Example 1, the material of the light-emitting layer is CdSeS quantum dots without polyvinyl alcohol functionalized Ti3C2T x .

[0223] Device Comparative Example 2

[0224] Device Comparative Example 1 is substantially identical to Device Example 1, except that in Device Comparative Example 2, the material of the light-emitting layer is ZnSe quantum dots, the material of the electron transport layer is TiO2, and the material of the hole transport layer is CuO.

[0225] Device Comparative Example 3

[0226] Device Comparative Example 3 is substantially identical to Device Example 1, except that in Device Comparative Example 3, the composite material of Example 1 is replaced by the composite material of Comparative Example 3.

[0227] The external quantum efficiency and the service life T95@1000nit of the optoelectronic devices of Device Examples 1-29 and Device Comparative Examples 1-3 were tested, respectively, and the results are shown in Table 2.

[0228] The test method of external quantum efficiency EQE is: the ratio of the number of electron-hole pairs injected into the quantum dots to the number of emitted photons, unit is %, which is an important parameter for measuring the advantages and disadvantages of electroluminescent devices, which can be obtained by using EQE optical testing instrument. The specific calculation formula is as follows:

[0229]

[0230] Wherein, η e is the light output coupling efficiency, η r is the ratio of the number of injected carriers to the number of injected carriers, χ is the ratio of the number of excitons to the total number of excitons, K R is the radiation process rate, K NR is the non-radiation process rate.

[0231] Test conditions: carried out at room temperature, air humidity is 30-60%.

[0232] The voltage difference can reflect the stability of the device, the time required for the device to reduce the brightness to a certain proportion of the highest brightness under constant current or voltage driving, the time when the brightness decreases to 95% of the highest brightness is defined as T95, the voltage when measuring T95 and the minimum voltage during device operation, the difference is the voltage difference;

[0233] The measurement method of lifetime T95@1000nit is: the time required for the device to reduce the brightness to a certain proportion of the highest brightness under constant current or voltage driving, the time when the brightness decreases to 95% of the highest brightness is defined as T95, which is the measured lifetime. In order to shorten the test period, the device lifetime test is usually carried out by accelerating the device aging at high brightness, and the lifetime at high brightness is obtained by fitting the extended exponential decay brightness decay fitting formula, such as: the lifetime at 1000nit is T95@1000nit. The specific calculation formula is as follows:

[0234]

[0235] Wherein, T95 L is the lifetime at low brightness, T95 H is the measured lifetime at high brightness, L H is the highest brightness of the device, L L is 1000nit, and A is the acceleration factor. In this experiment, the value of A is 1.7 by measuring the lifetime of several groups of QLED devices at the rated brightness.

[0236] Table 2

[0237]

[0238]

[0239]

[0240] From Table 2, it can be seen that:

[0241] As can be seen from device examples 1-11 and device comparative examples 1-3, after improving the performance of quantum dots, the composite material has a higher PLQY, and the application of the composite material to the light-emitting layer can significantly improve the external quantum efficiency of the optoelectronic device; and the composite material also has good stability, thus prolonging the service life of the optoelectronic device and significantly improving the performance of the optoelectronic device; it should be noted that in device comparative example 3, polycatechol functionalized MXene is used to modify quantum dots and applied to the light-emitting layer, and the performance of the optoelectronic device is also obviously improved compared with device comparative examples 1-2, but it is still significantly inferior to the performance of the optoelectronic device of device example 1, which is mainly due to the difference in polymers and the different effects of MXene functionalization, which affects the performance of the composite material and in turn affects the performance of the optoelectronic device; poly catechol functionalized MXene is oxidized and degraded under the operating conditions of the optoelectronic device, which limits the improvement of the performance of the optoelectronic device, while the polymer provided in the present application can more obviously improve the external quantum efficiency and service life of the optoelectronic device;

[0242] As can be seen from device examples 12-18 and device comparative examples 1-2, the application of the composite material of polymer functionalized MXene modified N-type semiconductor particles to the electron functional layer in the optoelectronic device improves the migration performance of electrons, promotes the recombination of electrons and holes, and thus improves the light-emitting efficiency and service life of the optoelectronic device;

[0243] As can be seen from device examples 19-25 and device comparative examples 1-2, the application of the composite material of polymer functionalized MXene modified P-type semiconductor particles to the hole functional layer in the optoelectronic device improves the transmission performance of holes, promotes the recombination of holes and electrons, and thus improves the light-emitting efficiency and service life of the optoelectronic device;

[0244] As can be seen from device examples 25-29 and device comparative examples 1 and 3, when the composite material provided in the present application is used in the multi-layer functional layer of the optoelectronic device, the performance of the optoelectronic device is significantly improved, which is because the contact between different functional layers of the composite material is beneficial to improving the interface performance between the functional layers, making the functional layers more closely connected, increasing the conduction path and conductivity, promoting the transmission of electrons and holes, and effectively emitting light in the light-emitting layer region; especially in device example 29, the external quantum efficiency of the optoelectronic device is more than 2 times that of device comparative example 1, and the service life is about 7 times that of device comparative example 1, which significantly improves the performance of the optoelectronic device.

[0245] The composite material, the preparation method thereof, the optoelectronic device and the display device provided by the embodiments of the present application are described in detail above, and the principles and implementation manners of the present application are described by applying specific examples; the above description of the embodiments is only used to help understand the method of the present application and the core idea thereof; meanwhile, for those skilled in the art, the specific implementation manners and application ranges will be changed according to the idea of the present application, and the above description of the present application should not be understood as a limitation of the present application.

Claims

1. A composite material, characterized by, The inorganic particles and the polymer functionalized MXene are included.

2. The composite material of claim 1, wherein, a mass ratio of the inorganic particles to the polymer functionalized MXene is 1:(5-10); and / or the inorganic particles and the polymer functionalized MXene are connected by one or more of covalent bond, non-covalent bond in the composite material; the non-covalent bond includes one or more of electrostatic interaction, van der Waals force, π-π stacking; and / or the polymer functionalized MXene has a sheet structure in the composite material, and the inorganic particles are located in the interstices of the sheet structure.

3. The composite material of claim 1, wherein, The polymer functionalized MXene includes a multi-layer sheet MXene and a polymer film on the surface of the sheet MXene, and the multi-layer sheet MXenes are stacked to form the sheet structure.

4. The composite material of claim 3, wherein, a material of the polymer film includes a polymer, and the polymer includes one or more of polyacids, polyalcohols, polyolefins, polyamines, polyesters; the polyacids include one or more of polyacrylic acid, polystyrene sulfonic acid, polylactic acid; the polyalcohols include polyvinyl alcohol; the polyolefins include polystyrene; the polyamines include one or more of polyethyleneimine, polyacrylamide; the polyesters include one or more of polydimethylaminoethyl methacrylate, polymethyl methacrylate; and / or a mass ratio of the polymer to the MXene in the polymer functionalized MXene is (1-5):1; and / or a polymerization degree of the polymer is 2-10; and / or The MXene includes one or more of Ti3C2, Ti3C2T x , Nb2C, V2C, Cr2CT2, Cr2NO2; and / or an average thickness of the sheet MXene is 0.001 μm-1 μm; and / or an average sheet diameter of the sheet MXene is 5 μm-50 μm; and / or The average specific surface area of the said sheet MXene is 5 m 2 / g ~ 50 m 2 / g.

5. The composite material of claim 3, wherein, the inorganic particles are located between adjacent polymer films, and the inorganic particles are connected with the polymer of the polymer films; and / or the polymer films are coated on the surface of the sheet MXene; and / or the polymer and the MXene are connected by one or more of covalent bond, non-covalent bond; the non-covalent bond includes one or more of electrostatic interaction, van der Waals force, π-π stacking; and / or a thickness of the polymer film is 5 nm-20 nm.

6. The composite material of claim 1, wherein, an average particle size of the inorganic particles is 1 nm-20 nm; and / or the inorganic particles include a light-emitting material or a carrier functional material, and the light-emitting material includes quantum dots, and the carrier functional material includes N-type semiconductor particles or P-type semiconductor particles; optionally, an average particle size of the light-emitting material is 1 nm-20 nm; optionally, an average particle size of the carrier functional material is 1 nm-10 nm; Optionally, the quantum dots are selected from one or more of single-structure quantum dots, core-shell quantum dots, and perovskite quantum dots; the material of the single-structure quantum dots, the core material of the core-shell quantum dots, and the shell material of the core-shell quantum dots are each selected from one or more of II-VI compounds, IV-VI compounds, III-V compounds, and I-III-VI compounds; the shell of the core-shell quantum dots comprises one or more layers; the II-VI compounds are selected from one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI compounds are selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V compounds are selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; and the I-III-VI compounds are selected from one or more of CuInS2, CuInSe2, and AgInS2.The core-shell structure quantum dots are selected from one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS; the perovskite quantum dots are selected from doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the general structural formula of the inorganic perovskite semiconductor is AMX3, wherein A is Cs; + ion, M is a divalent metal cation selected from Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - , I - One or more of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2 + 、Cd 2+ Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - , I - One or more of; and / or Optionally, the N-type semiconductor particles comprise one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials, the material of the first undoped metal oxide particles comprises one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, the metal oxide in the first doped metal oxide particles comprises one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3, the doping element in the first doped metal oxide particles comprises one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, the IIB-VIA group semiconductor materials comprise one or more of ZnS, ZnSe, CdS, the IIIA-VA group semiconductor materials comprise one or more of InP, GaP, and the IB-IIIA-VIA group semiconductor materials comprise one or more of CuInS, CuGaS; and / or Optionally, the P-type semiconductor particles comprise one or more of second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides, the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles each independently comprises one or more of MoO3, WO3, NiO, CrO3, CuO, V2O5, the doping element in the second doped metal oxide particles comprises one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfides comprise one or more of CuS, MoS3, WS3, the metal selenides comprise one or more of MoSe3, WSe3, and the metal nitrides comprise P-type gallium nitride.

7. A method of producing a composite material, characterized by, comprising the following steps: providing polymer functionalized MXene and inorganic particles; mixing the polymer functionalized MXene and the inorganic particles to obtain a composite material.

8. The production method according to claim 7, wherein The preparation method of the polymer functionalized MXene comprises: providing a polymer solution and MXene, the polymer solution comprising a polymer; and mixing the polymer solution and the MXene to obtain the polymer functionalized MXene.

9. The preparation method of claim 8, wherein: the mass ratio of the polymer and the MXene is (1-5): 1; and / or the mass ratio of the polymer and the MXene is (1-5): 1; and / or the polymer includes one or more of polyacids, polyalcohols, polyolefins, polyamines, polyesters; the polyacids include one or more of polyacrylic acid, polystyrene sulfonic acid, polylactic acid; the polyalcohols include polyvinyl alcohol; the polyolefins include polystyrene; the polyamines include one or more of polyethyleneimine, polyacrylamide; the polyesters include one or more of polydimethylaminoethyl methacrylate, polymethyl methacrylate; and / or a polymerization degree of the polymer is 2-10; and / or The MXene includes one or more of Ti3C2, Ti3C2T x , Nb2C, V2C, Cr2CT2, Cr2NO2; and / or The MXene is a sheet-layer MXene; optionally, the sheet-layer MXene has a thickness of 0.001 μm to 1 μm, and a sheet diameter of 5 μm to 50 μm; optionally, the sheet-layer MXene has an average specific surface area of 5 m 2 / g to 50 m 2 / g; and / or the polymer solution further includes a first solvent, the first solvent includes one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, phenylethanone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, cresol; and / or a mass fraction of the polymer in the polymer solution is 0.1wt%-10wt%; and / or a temperature of the second mixing is 25°C-100°C; a time is 5min-120min.

10. The preparation method of claim 9, wherein an average particle size of the inorganic particles is 1nm-20nm; and / or the inorganic particles include a light-emitting material or a carrier functional material, the light-emitting material includes quantum dots, the carrier functional material includes N-type semiconductor particles or P-type semiconductor particles.

11. The production method according to claim 7, wherein a mass ratio of the inorganic particles to the polymer functionalized MXene is 1:(5-10); and / or a temperature of the first mixing is 30°C-100°C; a time is 10min-30min; and / or the first mixing of the polymer functionalized MXene and the inorganic particles includes: providing polymer functionalized MXene, the inorganic particles and a second solvent, and mixing to obtain a mixed solution; optionally, in the mixed solution, a mass concentration of the inorganic particles is 10mg / mL-50mg / mL; optionally, the second solvent includes one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, phenylethanone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, cresol.

12. An optoelectronic device, characterized in that comprises an anode, a functional layer and a cathode which are sequentially stacked; wherein a material of the functional layer includes the composite material of any one of claims 1-6, or is prepared by the preparation method of any one of claims 7-11.

13. The optoelectronic device of claim 12, wherein, the functional layer includes one or more of a hole functional layer, a light-emitting layer and an electron functional layer, the hole functional layer is between the anode and the light-emitting layer, and the electron functional layer is between the cathode and the light-emitting layer; a material of the hole functional layer includes the composite material; or a material of the light-emitting layer includes the composite material; or The material of the electron functional layer comprises the composite material; or The material of the hole functional layer and the light emitting layer comprises the composite material; or The material of the hole functional layer and the electron functional layer comprises the composite material; or The material of the light emitting layer and the electron functional layer comprises the composite material; or The material of the hole functional layer, the light emitting layer and the electron functional layer comprises the composite material.

14. The optoelectronic device of claim 13, wherein, The thickness of the hole functional layer is 20 nm to 50 nm; and / or The thickness of the light emitting layer is 20 nm to 50 nm; and / or The thickness of the electron functional layer is 20 nm to 50 nm; and / or When the material of the hole functional layer comprises the composite material, the inorganic particles in the composite material are P-type semiconductor particles; when the material of the electron functional layer and / or the light-emitting layer comprises the composite material, the material of the hole functional layer is one or more of the composite material, an organic P-type semiconductor material, P-type semiconductor particles, the organic P-type semiconductor material comprising one or more of 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-di(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green light-emitting material, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butyphenyl)diphenylamine)], poly(4-butylphenyl-diphenylamine), poly[bi(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p)phenylenevinylene, poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbiphenylamine, PEDOT, PEDOT:PSS and derivatives thereof, derivatives of PEDOT:PSS doped with s-MoO3, poly(N-vinylcarbazole) and derivatives thereof, polymethacrylate and derivatives thereof, poly(9,9-octylfluorene) and derivatives thereof, poly(spirofluorene) and derivatives thereof, N,N'-di(naphthalen-1-yl)-N,N'-diphenylbenzidine, spiro NPB, microcrystalline cellulose, and one or more of tetracyanoquinodimethane; and / or When the material of the light-emitting layer comprises the composite material, the inorganic particles in the composite material are quantum dots; when the material of the hole functional layer and / or the electron functional layer comprises the composite material, the material of the light-emitting layer is one or more of the composite material, an organic light-emitting material, quantum dots; the organic light-emitting material is selected from one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine iridium (III)], 4,4',4"-tris(carbazole-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine iridium], diaryl anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF materials, polymers containing B-N covalent bonds, HLCT materials, Exciplex light-emitting materials; and / or When the material of the electron functional layer comprises the composite material, the inorganic particles in the composite material are N-type semiconductor particles; when the materials of the hole functional layer and the light-emitting layer comprise the composite material, the material of the electron functional layer is one or more of the composite material, an organic N-type semiconductor material, N-type semiconductor particles; the organic N-type semiconductor material comprises one or more of 8-hydroxyquinoline aluminum, 1,3,5-tris(1-phenyl-1H-benzimidazole-2-yl)benzene, 4,7-diphenyl-1,10-phenanthroline, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole, bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum, bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum, 2,2'-(1,3-phenyl)di[5-(4-tert-butylphenyl)-1,3,4-oxadiazole], tris[2,4,6-trimethyl-3-(3-pyridyl)phenyl]borane, tetra[(m-pyridyl)-phen-3-yl]biphenyl, 3,3'-[5'-[3-(3-pyridyl)phenyl][1,1':3',1"-terphenyl]-3,3"-diyl]dipyridine, 1,3-bis(3,5-dipyridin-3-ylphenyl)benzene, n,n'-bis(naphthalen-1-yl)-n,n'-bis(phenyl)benzidine; and / or The anode and the cathode each independently include one or more of a metal, a carbon material and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a metal is arranged between doped or undoped transparent metal oxides, the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2.

15. A display device comprising: The optoelectronic device comprises the optoelectronic device according to any one of claims 12 to 14.

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