Organic silicon resin composition as well as preparation method and application thereof

Abstract

The invention provides an organic silicon resin composition as well as a preparation method and application thereof. The organic silicon resin composition is prepared from the following components: 60 to 100 parts of organopolysiloxane containing alkenyl, 10 to 70 parts of organic hydrogen polysiloxane, 0.01 to 2.5 parts of a catalyst, 0.01 to 5 parts of a tackifier and 0.01 to 5 parts of an inhibitor, the organic hydrogen polysiloxane comprises at least two of compounds shown in a formula 1, a formula 2 and a formula 3, wherein (R1R22SiO1 / 2) 2 (R3R1SiO2 / 2) a is shown in the formula 1; (R4R52SiO1 / 2) b (R6SiO3 / 2) c (SiO4 / 2) d is shown in the formula 2; and formula 3: (R7R82SiO1 / 2) 2 (R9HSiO2 / 2) e (SiO4 / 2) f. According to the organic silicon resin composition provided by the invention, the strength and toughness of the composition can be enhanced, the compatibility with CTE of a semiconductor device such as a chip is better, the internal stress of a material generated by cold and hot impact is reduced, the service life of the device is prolonged, and the reliability of the device is improved; when the organic silicon resin composition is used for bonding between a base material and a semiconductor device, the comprehensive performance is excellent, and particularly, the bonding force to the base material is high, and the thrust and the reliability are high.

Description

Technical Field

[0001] This invention relates to the field of die bond adhesive materials technology, and in particular to an organosilicon resin composition, its preparation method, and its application. Background Technology

[0002] Organosilicon polymers are polymers whose molecular structure contains silicon, with organic functional groups attached to the silicon atoms. The basic structural unit of organosilicon polymers consists of silicon-oxygen repeating units, and the side chains are connected to various other organic groups through silicon atoms. Organosilicon polymers possess electrical insulating properties; their dielectric loss, voltage withstand capability, corona resistance, volume resistivity, and surface resistivity are among the best in insulating materials, and their electrical insulating properties are minimally affected by temperature and frequency.

[0003] Hydrogen-containing siloxane resins, as important crosslinking agents, are used to prepare die-bonding materials such as LED die-bonding adhesives. These materials can bond semiconductor devices (such as chips) to substrates (such as supports). The bonding mechanism mainly relies on the bonding action between the hydrogen-containing siloxane resin and the support / chip to achieve the bonding of the chip and the substrate. The bonding is mainly reflected in two aspects: one is the bonding performance of the die-bonding material to the chip and the other is the cohesive force of the die-bonding material itself. The cohesive force is reflected in the strength of the die-bonding material, which is related to the structure of the hydrogen-containing siloxane resin. Existing patents, such as Japanese patent applications JP2002-327126 and JP2002-338833, propose a resin composition for coating and protecting light-emitting semiconductors, consisting of an organosilicon compound containing at least two unsaturated double bonds that are reactive with Si-H groups, a silicon compound containing at least two Si-H groups, and a hydrosilylation catalyst. However, the cured products of these hydrogen-containing organosilicon systems have insufficient hardness and low adhesion to substrates (such as metals or plastics). Developing chip bonding and die-bonding materials with high adhesion and high strength is of great significance for promoting the rapid development of the LED industry and popularizing LED commercial lighting. Summary of the Invention

[0004] To address the issues of insufficient hardness and low adhesion between existing silicone-based cured products and substrates, this application provides a silicone resin composition, its preparation method, and its application.

[0005] On one hand, this application provides an organosilicon resin composition comprising the following components: 60-100 parts of an organopolysiloxane containing alkenyl groups, 10-70 parts of an organohydrogen polysiloxane, 0.01-2.5 parts of a catalyst, 0.01-5 parts of a tackifier, and 0.01-5 parts of an inhibitor; The organohydrogen polysiloxane includes at least two of the compounds shown in Formula 1, Formula 2, and Formula 3. (R 1 R2 2SiO 1 / 2 )2(R 3 R 1 SiO 2 / 2 ) a Formula 1; Where a≥2, R 1 R 2 R 3 Each is independently selected from one of alkyl, alkoxy, monooxane-alkyl, or Si-H, and R 1 R 2 R 3 At least one of them is Si-H; (R 4 R 5 2SiO 1 / 2 ) b (R 6 SiO 3 / 2 ) c (SiO) 4 / 2 ) d Formula 2; Where 0 < b ≤ 3, 0 ≤ c ≤ 4, 0 ≤ d ≤ 8, and c and d are not simultaneously 0; R 4 R 5 R 6 Each is independently selected from one of alkyl, alkoxy, monooxane alkyl, Si-H, Si-OH, and contains at least one Si-H and / or Si-OH in the compound shown in Formula 2; (R 7 R 8 2SiO 1 / 2 )2(R 9 HSiO 2 / 2 ) e (SiO) 4 / 2 ) f Formula 3; Where 0 ≤ e, 0 ≤ f, and e and f are not both 0; R 7 R 8 R 9 Each is independently selected from one of alkyl, alkoxy, monooxane alkyl, Si-H, and Si-OH, and contains at least one Si-H and / or Si-OH in the compound shown in Formula 3.

[0006] Preferred, R 1 R 2 R 3 Each is independently selected from one of the following: alkyl groups from C1 to C10, alkoxy groups from C1 to C4, and monooxane alkyl groups from C2 to C5 (Si-H). R 4 R 5 R6 Each is independently selected from one of the following: alkyl groups from C1 to C10, alkoxy groups from C1 to C4, monooxane alkyl groups from C2 to C5, Si-H, and Si-OH. R 7 R 8 R 9 Each is independently selected from one of the following: alkyl group (C1-C10), alkoxy group (C1-C4), monooxane alkyl group (C2-C5), Si-H, and Si-OH.

[0007] Preferably, the compound shown in Formula 1 contains at least one Si-H at each end; the viscosity of the compound shown in Formula 1 at 50°C is 5~500 mPa·s; and / or, the compound shown in Formula 2 contains Si-H and Si-OH.

[0008] Preferably, the viscosity of the organohydrogen polysiloxane at 25°C is 10~4000 mPa·s.

[0009] Preferably, the organohydrogen polysiloxane is a combination of the compound shown in Formula 2 and the compound shown in Formula 3, wherein the mass percentage of the compound shown in Formula 2 in the organohydrogen polysiloxane is ≥30%; Alternatively, the organohydrogen polysiloxane is a combination of the compound shown in Formula 1 and the compound shown in Formula 2, wherein the mass percentage of the compound shown in Formula 1 in the organohydrogen polysiloxane is ≥30%; Alternatively, the organohydrogen polysiloxane is a combination of the compound shown in Formula 1 and the compound shown in Formula 3, wherein the mass percentage of the compound shown in Formula 1 in the organohydrogen polysiloxane is ≥30%; Alternatively, the organohydrogen polysiloxane is a combination of the compounds shown in Formula 1, Formula 2, and Formula 3, wherein the mass percentage of the compound shown in Formula 1 in the organohydrogen polysiloxane is ≥15%, and the mass percentage of the compound shown in Formula 2 is ≥15%.

[0010] Secondly, this application provides a method for preparing the above-described organosilicon resin composition, comprising the following steps: The organosilicon resin composition is obtained by uniformly mixing 60-100 parts of an alkenyl-containing organopolysiloxane, 10-70 parts of an organohydrogen polysiloxane, 0.01-2.5 parts of a catalyst, 0.01-5 parts of a tackifier, 0.01-5 parts of an inhibitor, and 1-10 parts of a filler. The preparation method of the organohydrogen polysiloxane includes the following steps: mixing siloxane monomer, silane monomer, organic solvent, water and acid catalyst evenly and reacting them; after the reaction is completed, post-treatment is performed to obtain the organohydrogen polysiloxane. The silane monomer includes one or more of difunctional alkoxysilanes, trifunctional alkoxysilanes, tetrafunctional alkoxysilanes, hexamethyldisiloxane, and 1,3,5,7-tetramethylcyclotetrasiloxane; the siloxane monomer has the structure shown in Formula 4. Formula 4, wherein R5, R6, R7, and R8 are each independently selected from alkyl and monooxane alkyl groups.

[0011] Preferably, the difunctional alkoxysilane comprises at least one of the structures shown in Formula 5-1, 5-2, and 5-3: , , ; R1, R2, R3, and R4 are each independently selected from alkyl groups and monooxane alkyl groups; The trifunctional alkoxysilane has the structure shown in Formula 6: Formula 6 Among them, R 11 R 12 R 13 R 14 Each is independently selected from alkyl groups and monooxane-alkyl groups; The tetrafunctional alkoxysilane has the structure shown in Formula 7: Formula 7 Among them, R 21 R 22 R 23 R 24 Each is independently selected from alkyl and monooxane alkyl.

[0012] Preferably, the organic solvent includes one or more of alcohol solvents, alkane solvents, and aromatic solvents; The acid catalyst includes at least one of inorganic acids and organic acids, wherein the organic acid includes one or more of trifluoromethanesulfonic acid, solid acid, acetic acid, formic acid, and propionic acid; The inorganic acid includes one or more of hydrochloric acid, sulfuric acid, and phosphoric acid; the reaction temperature is 50~80℃, and the reaction time is 1~5h; after the reaction, the post-treatment to obtain the organosilicon resin composition includes the following steps: after the reaction, the organic phase is obtained by layering, the pH of the organic phase is adjusted to 6~8, washed, dried, and distilled under reduced pressure to obtain the organohydrogen polysiloxane.

[0013] Thirdly, this application provides chip mounting materials for semiconductor optical devices, which include the silicone resin composition described above or the silicone resin composition prepared by the method described above.

[0014] Fourthly, this application provides an optical semiconductor device that uses the chip mounting material described above.

[0015] The organosilicon resin composition provided in this application uses an organohydrogen polysiloxane as a crosslinking agent. The Si-H bonds and / or Si-OH bonds contained therein can react with the unsaturated alkenyl groups in the organohydrogen polysiloxane containing alkenyl groups to form a three-dimensional network structure, thereby enhancing the strength and toughness of the organosilicon resin composition, preventing cracking or deformation during use, and improving adhesion to semiconductor devices (such as chips) or substrates (such as supports). The compounds shown in Formula 2 and / or Formula 3 contained in the organohydrogen polysiloxane can improve the hardness of the die-bonding material, have better compatibility with the CTE (coefficient of linear expansion) of gallium nitride (chips), reduce the internal stress generated by thermal shock, and improve the service life and reliability of the device. This application provides an organosilicon resin composition that enhances the strength and toughness of the composition, improves compatibility with the CTE of semiconductor devices such as chips, reduces internal stress generated by thermal shock, and improves the service life and reliability of the device. When the organosilicon resin composition is used for bonding between the substrate and the semiconductor device, it has excellent overall performance, especially strong adhesion to the substrate, which is reflected in high thrust and high reliability. Detailed Implementation

[0016] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0017] To illustrate the technical solution of the present invention, specific embodiments are described below.

[0018] This application provides an organosilicon resin composition comprising the following components: 60-100 parts of an organopolysiloxane containing alkenyl groups, 10-70 parts of an organohydrogen polysiloxane, 0.01-2.5 parts of a catalyst, 0.01-5 parts of a tackifier, and 0.01-5 parts of an inhibitor; (R 1 R 2 2SiO 1 / 2 )2(R 3 R 1 SiO 2 / 2 ) a Formula 1; Where a≥2, R 1R 2 R 3 Each is independently selected from one of alkyl, alkoxy, monooxane-alkyl, or Si-H, and R 1 R 2 R 3 At least one of them is Si-H; (R 4 R 5 2SiO 1 / 2 ) b (R 6 SiO 3 / 2 ) c (SiO) 4 / 2 ) d Formula 2; Where 0 < b ≤ 3, 0 ≤ c ≤ 4, 0 ≤ d ≤ 8, and c and d are not simultaneously 0; R 4 R 5 R 6 Each is independently selected from one of alkyl, alkoxy, monooxane alkyl, Si-H, Si-OH, and contains at least one Si-H and / or Si-OH in the compound shown in Formula 2; (R 7 R 8 2SiO 1 / 2 )2(R 9 HSiO 2 / 2 ) e (SiO) 4 / 2 ) f Formula 3; Where 0 ≤ e, 0 ≤ f, and e and f are not both 0; R 7 R 8 R 9 Each is independently selected from one of alkyl, alkoxy, monooxane alkyl, Si-H, and Si-OH, and contains at least one Si-H and / or Si-OH in the compound shown in Formula 3.

[0019] Specifically, alkyl groups include straight-chain alkyl groups or branched alkyl groups. Straight-chain alkyl groups include methyl, ethyl, propyl, pentyl, and hexyl; branched alkyl groups include isobutyl and isopropyl. Alkoxy groups include straight-chain alkoxy groups or branched alkoxy groups. Straight-chain alkoxy groups include methoxy and ethoxy; branched alkoxy groups include -OCH2CH(CH3)CH2CH(CH3)CH3 and -OCH(CH3)C(CH3)2CH2CH3. Monooxane-alkyl groups are cyclic alkanes in which one carbon atom in a polycyclic ring is replaced by an oxygen atom to form an oxane structure.

[0020] When the compounds shown in Formula 1, Formula 2, and Formula 3 are all selected from Si-H groups, the silicon-hydrogen bonds can participate in the addition reaction of unsaturated groups such as vinyl groups to form a three-dimensional network structure, which greatly improves the mechanical properties of the die-bonding material and better fixes the LED chip on the bracket or substrate. At the same time, the Si-H bonds form chemical bonds with the hydroxyl groups on the surface of semiconductor devices such as chips. Through the cohesive force of the silicone resin composition itself, the semiconductor device is more firmly bonded to the substrate, preventing the die-bonding material from detaching from the surface of the semiconductor device.

[0021] When the compounds shown in Formula 2 and Formula 3 are both selected from Si-OH groups and Si-H groups, the content of Si-OH groups is much smaller than the content of Si-H groups. Both Si-OH groups and Si-H groups can form hydrogen bonds or undergo chemical reactions with the active groups on the surface of the encapsulated device, such as a chip, to jointly enhance the adhesion between the die-bonding material and the surface of the encapsulated device.

[0022] The silicone resin composition contains compounds shown in Formula 2 and / or Formula 3. On the one hand, it can improve the hardness of the die-bonding material formed after curing with an organopolysiloxane containing alkenyl groups, effectively preventing the die-bonding material from softening at high temperatures, thereby ensuring good physical and chemical stability at high temperatures. On the other hand, it can reduce the CTE value (coefficient of linear expansion) of the silicone resin composition, making it more compatible with the CTE of gallium nitride (chip), reducing the internal stress generated by thermal shock, and improving the service life and reliability of semiconductor devices.

[0023] The silicone resin composition provided in this application uses an organohydrogen polysiloxane as a crosslinking agent. The Si-H bonds and / or Si-OH bonds contained therein can react with the unsaturated alkenyl groups in the organohydrogen polysiloxane containing alkenyl groups to form a three-dimensional network structure, thereby enhancing the strength and toughness of the silicone resin composition, preventing cracking or deformation during use, and improving adhesion to semiconductor devices (such as chips) or substrates (such as supports). The compounds shown in Formula 2 and / or Formula 3 contained in the organohydrogen polysiloxane can improve the hardness of the die-bonding material, have better compatibility with the CTE (coefficient of linear expansion) of gallium nitride (chips), reduce the internal stress generated by thermal shock, and improve the service life and reliability of the device.

[0024] This application provides an organosilicon resin composition that enhances the strength and toughness of the composition, improves compatibility with the CTE of semiconductor devices such as chips, reduces internal stress generated by thermal shock, and improves the service life and reliability of the device. When the organosilicon resin composition is used for bonding between the substrate and the semiconductor device, it has excellent overall performance, especially strong adhesion to the substrate, which is reflected in high thrust and high reliability.

[0025] In some preferred embodiments, R 1 R 2 R 3 Each is independently selected from one of the following: alkyl groups from C1 to C10, alkoxy groups from C1 to C4, and monooxane alkyl groups from C2 to C5 (Si-H). R 4 R 5 R 6 Each is independently selected from one of the following: alkyl groups from C1 to C10, alkoxy groups from C1 to C4, monooxane alkyl groups from C2 to C5, Si-H, and Si-OH. R 7 R 8 R 9 Each is independently selected from one of the following: alkyl group (C1-C10), alkoxy group (C1-C4), monooxane alkyl group (C2-C5), Si-H, and Si-OH.

[0026] C1-C10 alkyl groups include methyl, ethyl, hexyl, isobutyl, etc. C1-C4 alkoxy groups include methoxy, ethoxy, propoxy, etc. C2-C5 monooxane alkyl groups are cyclic alkanes where one carbon atom in the polycyclic ring is replaced by an oxygen atom, forming an oxane structure, including... , , , 1,3-epoxypropylene, etc.

[0027] Monooxane-alkyl groups can improve the bonding force with the material being solidified.

[0028] In some embodiments, the compound of Formula 1 contains at least one Si-H at each end; the viscosity of the compound of Formula 1 at 50°C is 5~500 mPa·s.

[0029] Specifically, the compound shown in Formula 1 contains at least one Si-H bond at each end, and the content of Si-H bonds is high. Some of the Si-H bonds react with unsaturated groups such as vinyl groups to form a three-dimensional network structure, which improves the mechanical properties of the die-bonding material. Other Si-H bonds form chemical bonds with hydroxyl groups on the surface of semiconductor devices such as chips, which improves the adhesion between the die-bonding material and the surface of semiconductor devices and substrates, and prevents the die-bonding material from detaching from the surface of semiconductor devices.

[0030] At a temperature of 50°C, the viscosity of the compound shown in Formula 1 is in the range of 5~500 mPa·s, which helps the Si-H bonds of the compound shown in Formula 1 to participate in the reaction, controls the degree of cross-linking reaction, produces a uniform cross-linking structure, and enables the die-bonded material to obtain good mechanical properties, thus better protecting the semiconductor device being die-bonded.

[0031] Specifically, the viscosity of the compound shown in Formula 1 at a temperature of 50°C can be in the following ranges: 5~80 mPa·s, 80~150 mPa·s, 150~230 mPa·s, 230~400 mPa·s, or 400~500 mPa·s.

[0032] It should be noted that the compound shown in Formula 1 is solid at room temperature; at 50°C, the viscosity of the compound shown in Formula 1 is 5~500 mPa·s.

[0033] In some embodiments, the compound represented by Formula 2 contains Si-H and Si-OH.

[0034] Specifically, the compound shown in Formula 2 preferably contains Si-H groups and Si-OH groups. The Si-H bonds react with unsaturated groups such as vinyl groups in the cured material to construct a three-dimensional network structure, improving the mechanical properties and stability of the die-bonding material and enabling it to better withstand external pressure and temperature changes. The Si-OH bonds (silanol groups) have high surface activity; they can form hydrogen bonds or undergo chemical reactions with hydroxyl groups or other active groups on the surface of the die-bonded material, such as the chip. The Si-H bonds can also react with some active groups to jointly enhance the adhesion between the die-bonded material and the surface of the encapsulated device.

[0035] In some embodiments, the compound shown in Formula 2 contains Si-H and Si-OH, and in the compound shown in Formula 2, the mass percentage of -OH in Si-OH is <5%.

[0036] Specifically, in the compound shown in Formula 2, the mass percentage of Si-OH is less than 5%. This ensures that while the Si-H bond reaction forms a die-bonded material with better mechanical properties and a more stable structure, it does not affect the cross-linking of Si-H bonds with the alkenyl group, nor does it affect the formation of hydrogen bonds or chemical reactions between Si-H bonds and hydroxyl groups or other active groups on the semiconductor device surface, thus improving the adhesion between the die-bonded material and the surface of the encapsulated device. If the mass percentage of Si-OH is too high, a large amount of Si-H bonds are consumed during the cross-linking reaction, reducing the number of Si-H bonds that can form hydrogen bonds or undergo chemical reactions with hydroxyl groups or other active groups on the semiconductor device surface, thereby decreasing the adhesion between the die-bonded material and the surface of the encapsulated device.

[0037] In some preferred embodiments, the compound shown in Formula 2 contains Si-H groups, and / or the compound shown in Formula 3 contains Si-H groups.

[0038] Specifically, the compound shown in Formula 2 preferably contains Si-H groups, and / or the compound shown in Formula 3 contains Si-H groups, which helps to form a three-dimensional network structure by adding to the unsaturated groups of the cured material, such as vinyl groups, thereby enhancing the mechanical properties of the die-bonding material. At the same time, it also improves the cohesive force of the silicone resin composition and enhances the adhesion between the die-bonding material and conductive devices and substrates.

[0039] In some embodiments, the compound shown in Formula 3 contains monooxane alkyl groups and Si-H groups.

[0040] Specifically, on the one hand, monooxane-alkyl groups react with Si-OH groups in the cured material to form cross-linking bonds, thereby creating a stable three-dimensional network structure. On the other hand, monooxane-alkyl groups can improve the bonding force with the die-bonded material, such as the substrate scaffold, thus enhancing the adhesion between the die-bonded material and the semiconductor device or substrate. The Si-H bonds contained in the compound shown in Formula 3 react with the unsaturated vinyl groups in the cured material, improving the mechanical properties of the die-bonded material, and also enhancing the bonding force with the substrate scaffold.

[0041] In some embodiments, the silicone resin composition is a compound of Formula 1, or a compound of Formula 2, or a compound of Formula 3; or a mixture of the compound of Formula 1 and the compound of Formula 2; or a mixture of the compound of Formula 1 and the compound of Formula 3; or a mixture of the compound of Formula 2 and the compound of Formula 3; or a mixture of the compound of Formula 1, the compound of Formula 2, and the compound of Formula 3.

[0042] In some embodiments, the viscosity of the silicone resin composition is 10~4000 mPa·s.

[0043] The silicone resin composition is selected from at least two of the compounds shown in Formula 1, Formula 2 and Formula 3, and can be mixed in any proportion. At room temperature (25±5℃), it is only necessary to ensure that the viscosity of the silicone resin composition is in the range of 10~4000 mpa·s.

[0044] In some embodiments, the hydrogen content of the silicone resin composition is 0.1~2 mol / 100g.

[0045] The organosilicon resin composition of this application has a hydrogen content of 0.4~2 mol / 100g. The hydrogen atoms contained therein form Si-H bonds with Si, which can react with unsaturated groups such as vinyl groups in the die-bonding material to form a three-dimensional network structure, thereby enhancing the strength and toughness of the die-bonding material, preventing the die-bonding material from cracking or deforming during use, and improving the adhesion to semiconductor devices (such as chips) or substrates (such as supports).

[0046] Understandably, the materials used for the support include plastic, metal, or alloy.

[0047] In some embodiments, the organohydrogen polysiloxane is a combination of the compound shown in Formula 2 and the compound shown in Formula 3, wherein the mass percentage of the compound shown in Formula 2 in the organohydrogen polysiloxane is ≥30%.

[0048] Specifically, when the organohydrogen polysiloxane is a combination of compounds shown in Formula 2 and Formula 3, the resulting organosilicon resin composition is a die bond adhesive. It has higher thrust and shear strength, larger deformation rate, and larger complete deflection. When used for bonding between the substrate and the LED chip, it has strong adhesion to the substrate, making the chip less prone to displacement or detachment when subjected to external forces, thereby ensuring the normal operation and stability of the LED device and improving the reliability of the product.

[0049] In some embodiments, the organohydrogen polysiloxane is a combination of the compound shown in Formula 1 and the compound shown in Formula 2, wherein the mass percentage of the compound shown in Formula 1 in the organohydrogen polysiloxane is ≥30%; Alternatively, the organohydrogen polysiloxane is a combination of the compound shown in Formula 1 and the compound shown in Formula 3, wherein the mass percentage of the compound shown in Formula 1 in the organohydrogen polysiloxane is ≥30%.

[0050] Specifically, the content of the compound shown in Formula 1 is greater than 30%, ensuring that the hydrogen content in the organosilicon resin composition is in the range of 0.4~2 mol / 100g, and that it contains a sufficient number of Si-H bonds to enhance the strength and toughness of the die-bonding material, prevent the die-bonding material from cracking or deforming during use, and improve the adhesion to semiconductor devices (such as chips) or substrates (such as supports).

[0051] In some embodiments, the organohydrogen polysiloxane is a combination of the compound shown in Formula 1, the compound shown in Formula 2 and the compound shown in Formula 3, wherein the mass percentage of the compound shown in Formula 1 in the organohydrogen polysiloxane is ≥15%, and the mass percentage of the compound shown in Formula 2 is ≥15%.

[0052] Specifically, the product contains compounds shown in Formulas 1, 2, and 3, providing an organosilicon resin composition that enhances the strength and toughness of the composition, improves compatibility with the CTE of semiconductor devices such as chips, reduces internal stress generated by thermal shock, and improves the service life and reliability of the device. When the organosilicon resin composition is used for bonding between the substrate and the semiconductor device, it exhibits excellent overall performance, especially strong adhesion to the substrate, resulting in high thrust and high reliability.

[0053] Organopolysiloxanes containing alkenyl groups include vinylsiloxane resins and polydimethylsiloxane.

[0054] The catalysts include Castells platinum catalysts.

[0055] The inhibitor is an alkynyl alcohol inhibitor.

[0056] Tackifiers include epoxy-based silicone tackifiers.

[0057] The epoxy-based organosilicon tackifier includes γ-methacryloyloxypropylsiloxane polymer.

[0058] The filler includes fumed silica.

[0059] Secondly, this application provides a method for preparing the above-described organosilicon resin composition, comprising the following steps: The organosilicon resin composition is obtained by uniformly mixing 60-100 parts of an alkenyl-containing organopolysiloxane, 10-70 parts of an organohydrogen polysiloxane, 0.01-2.5 parts of a catalyst, 0.01-5 parts of a tackifier, 0.01-5 parts of an inhibitor, and 1-10 parts of a filler. The preparation method of the organohydrogen polysiloxane includes the following steps: mixing siloxane monomer, silane monomer, organic solvent, water and acid catalyst evenly and reacting them; after the reaction is completed, post-treatment is performed to obtain the organosilicon resin composition. The silane monomers include one or more of the following: difunctional alkoxysilanes, trifunctional alkoxysilanes, tetrafunctional alkoxysilanes, hexamethyldisiloxane, and 1,3,5,7-tetramethylcyclotetrasiloxane. The siloxane monomer includes the structure shown in Formula 4. Formula 4, wherein R5, R6, R7, and R8 are each independently selected from alkyl and monooxane alkyl groups.

[0060] Specifically, siloxane monomers include structures shown in Formula 4, such as 1,1,3,3-tetramethyldisiloxane.

[0061] Organic solvents are used to dissolve the reactants, siloxane monomers and silane monomers, while water is used to dissolve the acid catalyst. Hexamethyldisiloxane in the silane monomers can prevent the reaction between siloxane monomers such as 1,1,3,3-tetramethyldisiloxane and difunctional, trifunctional, or tetrafunctional alkoxysilanes, thereby generating a chain-like organosilicon resin of formula 1, 2, or 3. The method for preparing the organosilicon resin composition provided in this application is simple and low-cost.

[0062] In some embodiments, R5, R6, R7, and R8 are each independently selected from one of C1-C10 alkyl groups and C2-C5 monooxane alkyl groups.

[0063] In some embodiments, the siloxane monomer includes 1,1,3,3-tetramethyldisiloxane.

[0064] In some embodiments, the difunctional alkoxysilane comprises at least one of the structures shown in Formula 5-1, 5-2, and 5-3: , , ; R1, R2, R3, and R4 are each independently selected from alkyl groups and monooxane alkyl groups.

[0065] The trifunctional alkoxysilane has the structure shown in Formula 6: Formula 6 Among them, R 11 R 12 R 13 R 14 Each is independently selected from alkyl groups and monooxane-alkyl groups; The tetrafunctional alkoxysilane has the structure shown in Formula 7: Formula 7 Among them, R 21 R 22 R 23 R 24 Each is independently selected from alkyl and monooxane alkyl.

[0066] Specifically, difunctional alkoxysilanes, trifunctional alkoxysilanes, and tetrafunctional alkoxysilanes all contain an alkoxy group, which can be hydrolyzed to generate Si-OH, and react with reactant siloxane monomers containing Si-H bonds, such as 1,1,3,3-tetramethyldisiloxane, to generate at least one of the compounds shown in Formula 1, Formula 2, and Formula 3.

[0067] In some preferred embodiments, R1, R2, R3, and R4 are each independently selected from one of C1-C10 alkyl groups and C2-C5 monooxane alkyl groups; R 11 R 12 R 13 R 14 Each is independently selected from one of C1-C10 alkyl groups and C2-C5 monooxane alkyl groups; R 21 R 22 R 23 R 24 Each is independently selected from one of C1~C10 alkyl groups and C2~C5 monooxane alkyl groups.

[0068] More preferably, R1, R2, R3, and R4 are each independently selected from C1-C4 alkyl groups, R 11 R 12 R 13 R 14 Each is independently selected from C1~C4 alkyl groups, R 21 R 22 R 23 R 24 Each is independently selected from C1 to C4 alkyl groups.

[0069] In some embodiments, the organic solvent includes one or more of alcohol solvents, alkane solvents, and aromatic solvents.

[0070] Specifically, alcohol solvents include monohydric alcohols, which include at least one of methanol, ethanol, propanol, isopropanol, and butanol.

[0071] Alkane solvents include methylcyclohexane.

[0072] Aromatic solvents include at least one of toluene and xylene.

[0073] Organic solvents are used to dissolve 1,1,3,3-tetramethyldisiloxane, difunctional alkoxysilanes, and trifunctional siloxanes, which is beneficial to the reaction.

[0074] In some embodiments, the acid catalyst includes at least one of inorganic acids and organic acids, wherein the organic acid includes one or more of trifluoromethanesulfonic acid, solid acids, acetic acid, formic acid, and propionic acid; The inorganic acid includes one or more of hydrochloric acid, sulfuric acid, and phosphoric acid.

[0075] Acid catalysts act as catalysts, increasing the reaction rate.

[0076] In some embodiments, the reaction temperature is 50~80℃ and the reaction time is 1~5h.

[0077] Specifically, at temperatures of 50–80°C, siloxane monomers such as 1,1,3,3-tetramethyldisiloxane and difunctional alkoxysilanes and trifunctional siloxanes can react to generate at least one of the compounds shown in Formula 1, Formula 2, and Formula 3.

[0078] If the reaction temperature is below 50℃, the reaction cannot proceed; if the reaction temperature is above 80℃, the amount of byproducts will increase.

[0079] Specifically, the reaction temperature can be 50~60℃, 60~70℃ or 70~80℃, and the reaction time can be 1~2h, 2~3h, 3~4h or 4~5h.

[0080] In some embodiments, the reaction of mixing siloxane monomer, silane monomer, organic solvent, water and acid catalyst uniformly includes the following steps: mixing siloxane monomer, silane monomer, organic solvent, water and acid catalyst, stirring for 0.5 to 6 hours, mixing uniformly to obtain a homogeneous phase, and then heating to 50 to 80°C to react for 1 to 5 hours.

[0081] In some embodiments, H in the acid catalyst + The mass ratio of the mass of the siloxane monomer to the mass of the siloxane monomer is (0.001~6):100.

[0082] By controlling the mass ratio of acid catalyst to siloxane monomer, the reaction can proceed normally with less acid catalyst added, resulting in an organosilicon resin composition while reducing preparation costs.

[0083] In some embodiments, the post-processing to obtain the organosilicon resin composition after the reaction includes the following steps: after the reaction, the organic phase is separated into layers, and the pH of the organic phase is adjusted to 6-8, washed, dried, and distilled under reduced pressure to obtain the organosilicon resin composition.

[0084] After the reaction, an extraction solvent is added for extraction, causing the organic and inorganic phases to separate into two layers. The layers are then allowed to stand to separate, yielding the organic phase. The pH of the organic phase is then adjusted to 6-8. After pH adjustment, the phase is washed and dried to remove surface water. Finally, the silicone resin composition is obtained by vacuum distillation. The extraction solvent includes at least one of xylene, toluene, benzene, cyclohexane, and methylcyclohexane. The drying step can involve directly removing water by adding a desiccant, such as anhydrous calcium chloride.

[0085] In some embodiments, the organic phase is adjusted to pH 6-8 sequentially, and the washing process includes the following steps: adjusting the pH of the organic phase to 6-8 using an alkaline neutralizing agent, washing with deionized water, and after washing, testing the conductivity of the washing water to be ≤10μs / cm, at which point the washing process is complete.

[0086] Specifically, an alkaline neutralizing agent is used to adjust the pH value of the organic phase. The alkaline neutralizing agent is a weakly basic compound containing hydroxide ions, including sodium bicarbonate, sodium carbonate, and ammonia water. After adjusting the pH value of the organic phase to 6-8 with the alkaline neutralizing agent, the mixture is filtered to obtain filter residue. The filter residue is then washed with deionized water to remove the alkaline neutralizing agent from its surface.

[0087] It should be noted that the silicone resin composition also includes vinyl silicone oil.

[0088] Thirdly, this application provides a chip mounting material for a semiconductor optical device, comprising the silicone resin composition described above or the silicone resin composition prepared by the method described above.

[0089] Chip mounting materials, including the silicone resin composition provided in this application, and organohydrogen polysiloxanes that can be cured with alkenyl-containing organopolysiloxanes to obtain die-bonding materials, can bond semiconductor devices and substrates. For example, die-bonding materials used for chip-to-support bonding exhibit high adhesion to the support and high reliability after chip-to-support bonding. They are widely used in LED chip mounting supports. From the perspective of the entire operation process, the construction performance is simple, thereby improving productivity.

[0090] Fourthly, this application provides an optical semiconductor device that uses the chip mounting material described above.

[0091] Optical semiconductor devices using the chip mounting material of this application, and die-bonding materials used for bonding chips to substrates, exhibit high adhesion to substrates with high thrust, resulting in high reliability after chip-to-substrate bonding and simple construction performance, thereby improving productivity.

[0092] The present invention will be further illustrated by the following examples, but the present invention is not limited thereto.

[0093] Example 1 Synthesis of the compound shown in Formula 3: 50g of 1,1,3,3,tetramethyldisiloxane, 30g of hexamethyldisiloxane, 220g of methyl orthosilicate, 40g of isopropanol, 72g of water, and 10g of 0.3mol / L hydrochloric acid catalyst were added to a four-necked flask. The mixture was stirred at room temperature for 4 hours, then heated to 55°C and stirred for 3 hours. The temperature was lowered to 30°C, and 153g of xylene was added. The mixture was stirred at room temperature for 0.5 hours. After standing and separating into layers, the organic phase was collected, and 9.5g of sodium bicarbonate was added. After stirring for 1 hour, the mixture was filtered and washed 10 times with 450g of deionized water. The conductivity of the last wash solution was measured to be 2mS / cm. 5g of anhydrous calcium chloride was added to the above organic phase, and the mixture was stirred for 1.5 hours. After filtration, the organic phase was distilled under reduced pressure to obtain a solid hydrogen-containing organosilicon resin composition with a hydrogen content of 0.4mol / 100g. The structural formula of the organosilicon resin composition prepared in Example 1 is as follows: ((CH3)3SiO 1 / 2 ) 0.4 ((CH3)2HSiO 1 / 2 ) 0.7 (SiO) 4 / 2 ) 1.4 .

[0094] Example 2 Synthesis of the compound shown in Formula 3: 102g of 1,3,5,7-tetramethylcyclotetrasiloxane, 53g of 1,1,3,3-tetramethyldisiloxane, 40g of isopropanol, and 72g of water were slowly added dropwise with 10g of 0.3mol / L hydrochloric acid solution. The mixture was stirred for 5 hours after the addition was complete, heated to 65℃ and stirred for 6 hours, then cooled to 30℃. 150g of toluene was added, and the mixture was stirred at room temperature for 0.5 hours. After standing and separating into layers, the organic phase was collected, 2g of sodium bicarbonate was added, and the mixture was stirred for 1 hour. The mixture was filtered and washed 12 times with 450g of deionized water. The conductivity of the final wash solution was measured to be 3mS / cm. 5g of anhydrous calcium chloride was added to the above organic phase, and the mixture was stirred for 1.5 hours. After filtration, the organic phase was distilled under reduced pressure to obtain a liquid, low-viscosity, high-hydrogen-content organosilicon resin composition; viscosity 30 mPa·s, hydrogen content 1.60 mol / 100g. The structural formula of the organosilicon resin composition prepared in Example 2 is as follows: ((CH3)2HSiO 1 / 2 )2((CH3)HSiO 2 / 2 ) 4.3 (.

[0095] Example 3 Synthesis of the compound shown in Formula 2: 120 g of 1,1,3,3-tetramethyldisiloxane, 136 g of methyltrimethoxysilane, 50 g of isopropanol, 36 g of water, and 1.6 g of trifluoromethanesulfonic acid were placed in a four-necked flask and stirred at room temperature for 2 h. The temperature was then raised to 80 °C and stirred for 5 h. The temperature was lowered to 30 °C, and 100 g of toluene was added. The mixture was stirred at room temperature for 0.5 h. After standing and separating into layers, the organic phase was collected, and 2 g of sodium bicarbonate was added. The mixture was stirred for 1 h, filtered, and washed 8 times with 450 g of deionized water. The conductivity of the final wash solution was measured to be 2 mS / cm. 5 g of anhydrous calcium chloride was added to the above organic phase, and the mixture was stirred for 1.5 h. After filtration, the organic phase was distilled under reduced pressure to obtain a semi-solid hydrogen-containing organosilicon resin composition with a hydrogen content of 1.73 mol / 100 g.

[0096] The structural formula of the organosilicon resin composition prepared in Example 3 is as follows: ((CH3)2HSiO) 1 / 2 )2(CH3SiO3 / 2 ) 1.1 .

[0097] Example 4 Synthesis of the compound shown in Formula 1: 60g of 1,3,5,7-tetramethylcyclotetrasiloxane, 26.8g of 1,1,3,3-tetramethyldisiloxane, 148g of dimethyldiethoxysilane, 40g of isopropanol, and 72g of water were added to a four-necked flask and mixed thoroughly. 30g of 0.1mol / L sulfuric acid solution was slowly added dropwise. After the addition was complete, the mixture was stirred for 6 hours. The temperature was raised to 65℃ and stirred for 5 hours. The temperature was lowered to 30℃, and 150g of toluene was added. The mixture was stirred at room temperature for 0.5 hours. After standing and separating into layers, the organic phase was collected, and 2g of sodium bicarbonate was added. The mixture was stirred for 1 hour, filtered, and washed 12 times with 450g of deionized water. The conductivity of the final wash solution was measured to be 3 mS / cm. 5g of anhydrous calcium chloride was added to the above organic phase, and the mixture was stirred for 1.5 hours. After filtration, the organic phase was distilled under reduced pressure to obtain a liquid hydrogen-containing organosilicon resin composition with a viscosity of 108 mPa·s and a hydrogen content of 0.87 mol / 100g. The structural formula of the organosilicon resin composition prepared in Example 4 is as follows: ((CH3)2HSiO 1 / 2 )2((CH3)HSiO 2 / 2 )5((CH3)2SiO 2 / 2 5.

[0098] Example 5 Synthesis of the compound shown in Formula 3: 12g of 1,1,3,3-tetramethyldisiloxane, 268g of dimethyldimethoxysilane, 110g of methyl orthosilicate, 40g of isopropanol, and 72g of water were added to a four-necked flask and mixed thoroughly. 30g of 0.1mol / L sulfuric acid solution was slowly added dropwise. After the addition was complete, the mixture was stirred for 6 hours, heated to 65℃ and stirred for 5 hours, then cooled to 30℃. 150g of toluene was added, and the mixture was stirred at room temperature for 0.5 hours. After standing and separating into layers, the organic phase was collected, 2g of sodium bicarbonate was added, and the mixture was stirred for 1 hour. The mixture was filtered, washed 12 times with 450g of deionized water, and the conductivity of the final wash solution was measured to be 3 mS / cm. 5g of anhydrous calcium chloride was added to the above organic phase, and the mixture was stirred for 1.5 hours. After filtration, the organic phase was distilled under reduced pressure to obtain a semi-solid hydrogen-containing organosilicon resin composition with a hydrogen content of 0.07 mol / 100g. The structural formula of the organosilicon resin composition prepared in Example 5 is as follows: ((CH3)2HSiO 1 / 2 ) 0.18 ((CH3)2SiO 2 / 2 )) 2.5 (SiO) 4 / 2 ) 0.72 .

[0099] Example 6 This embodiment is the same as most of the steps in Embodiment 1, except that the reaction temperature is different. In Embodiment 6, the temperature is raised to 100°C and stirred for 3 hours. The rest of the steps are the same as those in Embodiment 1.

[0100] Comparative Example 1 Purchase existing crosslinking agents, such as linear polysiloxanes.

[0101] The organosilicon resin compositions obtained in the above embodiments were used to prepare a crystal-bonding material according to the following method, the specific steps of which are as follows: The solidification material was prepared by uniformly mixing 80 parts of vinyl siloxane resin, 45 parts of vinyl silicone oil, the aforementioned silicone resin composition, 3 parts of tackifier (γ-methacryloyloxypropylsiloxane polymer), 0.5 parts of catalyst (Karsted catalyst), 2 parts of filler (fumed silica), and 1 part of alkynyl alcohol inhibitor. The solidification materials prepared using the silicone resin compositions of Examples 1-6 are classified as A-1 to A-10, and the solidification materials prepared using the crosslinking agent of Comparative Example 1 are classified as B-1. The corresponding weight parts of Examples 1-6 and Comparative Example 1 are shown in Table 1.

[0102] Table 1 Performance testing of the die-bonded material: 1) Hardness After degassing the solidification materials obtained from A-1 to A-9 and B-1, take 10g and keep it at 100℃ for 1h, then cure it at 150℃ for 3h. Then, use a Shore D hardness tester to measure the hardness value at three points under the conditions of 25℃ and 60%RH, and record the average value.

[0103] 2) Bending deflection; After degassing the solidified materials obtained from A-1 to A-9 and B-1 above, they were molded into strips with a length of 80 mm, a width of 10 mm, and a height of 4 mm. After curing at 100℃ for 1 hour and then at 150℃ for 3 hours, the bending deflection was tested according to the national standard GBT-9341-2008. 3) Deformation rate After degassing the solidification materials obtained from A-1 to A-9 and B-1 above, they were molded into strips with a length of 80 mm, a width of 10 mm, and a height of 4 mm. After curing at 100℃ for 1 hour and then at 150℃ for 3 hours, the deformation rate was tested according to the national standard GBT-9341-2008. 4) Shear strength Using ceramic alumina as a simulated chip material, a die-bonding material was coated between two ceramic alumina sheets. The coating thickness of the die-bonding material was 2.0±0.1mm, and the thickness of the ceramic alumina was 2.0±0.1mm. The coating width of the die-bonding material was 10mm. The shear strength of the die-bonding material against the ceramic alumina was tested.

[0104] 5) Thrust test: A 10×30mil silicon wafer was bonded to a 2835 substrate. One substrate was bonded with each of the die bonding materials obtained from A-1 to A-9 (the 2835 substrate has a specification of 16×36, totaling 576 substrates). The substrate with the wafer bonded was cured at 150°C for 3 hours, and the pushing force value when the chip was pushed away was tested using a force gauge LB-8100A.

[0105] The test results are shown in Table 2.

[0106] Table 2 As shown in Tables 1 and 2, compared with B-1, A-1 to A-8, using the organosilicon resin compositions provided in this application, yields a larger die-bonding adhesive push force. This indicates that using the organohydrogen polysiloxane of this application as a crosslinking agent, the Si-H bonds and / or Si-OH bonds contained therein can react with the unsaturated alkenyl groups in the organopolysiloxane containing alkenyl groups to form a three-dimensional network structure, enhancing the strength and toughness of the organosilicon resin composition, preventing cracking or deformation of the organosilicon resin composition during use, and improving the adhesion to semiconductor devices (such as chips) or substrates (such as supports).

[0107] A comparison of A-1~A-5 and A-6~A-8 shows that when organic hydrogen polysiloxanes are selected from both compounds shown in Formula 2 and Formula 3, the overall performance of the die bond is better, and the die bond has a larger inference value.

[0108] By comparing A-6 to A-8 and B-1, the organosilicon resin composition of this application includes at least two of the compounds shown in Formula 1, Formula 2 and Formula 3. The resulting die bond adhesive has high thrust, high shear strength, high deformation rate and high complete deflection. When used for bonding between substrate and semiconductor device, it has excellent comprehensive performance, especially strong adhesion to the substrate, which is reflected in high thrust and high reliability.

[0109] By comparing A-1 and A-9, the reaction temperature in the preparation of Example 1 was 100℃. The reaction temperature was higher than the range of 50~80℃, and the resulting organosilicon resin composition had low thrust and low shear strength. This indicates that in the preparation of organohydrogen polysiloxane, a reaction temperature of 50~80℃ and a reaction time of 1~5h are beneficial for preparing the compounds shown in Formulas 1, 2, and 3. The resulting die-attach adhesive material has high thrust, high shear strength, high deformation rate, and high complete deflection, which improves the service life and reliability of the device.

[0110] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included within the protection scope of the present invention.

Claims

1. An organosilicon resin composition, characterized in that, It includes the following components: 60-100 parts of an organopolysiloxane containing alkenyl groups, 10-70 parts of an organohydrogen polysiloxane, 0.01-2.5 parts of a catalyst, 0.01-5 parts of a tackifier, and 0.01-5 parts of an inhibitor; The organohydrogen polysiloxane includes at least two of the compounds shown in Formula 1, Formula 2, and Formula 3. (R 1 R 2 2SiO 1 / 2 )2(R 3 R 1 SiO 2 / 2 ) a Formula 1; Where a≥2, R 1 R 2 R 3 Each is independently selected from one of alkyl, alkoxy, monooxane-alkyl, or Si-H, and R 1 R 2 R 3 At least one of them is Si-H; (R 4 R 5 2SiO 1 / 2 ) b (R 6 SiO 3 / 2 ) c (SiO 4 / 2 ) d Formula 2; Where 0 < b ≤ 3, 0 ≤ c ≤ 4, 0 ≤ d ≤ 8, and c and d are not simultaneously 0; R 4 R 5 R 6 Each is independently selected from one of alkyl, alkoxy, monooxane alkyl, Si-H, Si-OH, and contains at least one Si-H and / or Si-OH in the compound shown in Formula 2; (R 7 R 8 2SiO 1 / 2 )2(R 9 HSiO 2 / 2 ) e (SiO) 4 / 2 ) f Formula 3; Where 0 ≤ e, 0 ≤ f, and e and f are not both 0; R 7 R 8 R 9 Each is independently selected from one of alkyl, alkoxy, monooxane alkyl, Si-H, and Si-OH, and contains at least one Si-H and / or Si-OH in the compound shown in Formula 3.

2. The organosilicon resin composition according to claim 1, characterized in that, R 1 R 2 R 3 Each is independently selected from one of the following: alkyl groups from C1 to C10, alkoxy groups from C1 to C4, and monooxane alkyl groups from C2 to C5 (Si-H). R 4 、R 5 、R 6 Each is independently selected from one of the following: alkyl groups from C1 to C10, alkoxy groups from C1 to C4, monooxane alkyl groups from C2 to C5, Si-H, and Si-OH. R 7 R 8 R 9 Each is independently selected from one of the following: alkyl group (C1-C10), alkoxy group (C1-C4), monooxane alkyl group (C2-C5), Si-H, and Si-OH.

3. The organosilicon resin composition according to claim 1, characterized in that, The compound shown in Formula 1 contains at least one Si-H at each end; the viscosity of the compound shown in Formula 1 at 50°C is 5~500 mPa·s. And / or, the compound shown in Formula 2 contains Si-H and Si-OH.

4. The organosilicon resin composition according to claim 1, characterized in that, The viscosity of the organohydrogen polysiloxane at 25°C is 10~4000 mPa·s.

5. The organosilicon resin composition according to claim 1, characterized in that, The organohydrogen polysiloxane is a combination of the compound shown in Formula 2 and the compound shown in Formula 3, wherein the mass percentage of the compound shown in Formula 2 in the organohydrogen polysiloxane is ≥30%; Alternatively, the organohydrogen polysiloxane is a combination of the compound shown in Formula 1 and the compound shown in Formula 2, wherein the mass percentage of the compound shown in Formula 1 in the organohydrogen polysiloxane is ≥30%; Alternatively, the organohydrogen polysiloxane is a combination of the compound shown in Formula 1 and the compound shown in Formula 3, wherein the mass percentage of the compound shown in Formula 1 in the organohydrogen polysiloxane is ≥30%; Alternatively, the organohydrogen polysiloxane is a combination of the compounds shown in Formula 1, Formula 2, and Formula 3, wherein the mass percentage of the compound shown in Formula 1 in the organohydrogen polysiloxane is ≥15%, and the mass percentage of the compound shown in Formula 2 is ≥15%.

6. A method for preparing the organosilicon resin composition according to any one of claims 1-5, characterized in that, Includes the following steps: The organosilicon resin composition is obtained by uniformly mixing 60-100 parts of an alkenyl-containing organopolysiloxane, 10-70 parts of an organohydrogen polysiloxane, 0.01-2.5 parts of a catalyst, 0.01-5 parts of a tackifier, 0.01-5 parts of an inhibitor, and 1-10 parts of a filler. The preparation method of the organohydrogen polysiloxane includes the following steps: mixing siloxane monomer, silane monomer, organic solvent, water and acid catalyst evenly and reacting them; after the reaction is completed, post-treatment is performed to obtain the organohydrogen polysiloxane. The silane monomers include one or more of the following: difunctional alkoxysilanes, trifunctional alkoxysilanes, tetrafunctional alkoxysilanes, hexamethyldisiloxane, and 1,3,5,7-tetramethylcyclotetrasiloxane. The siloxane monomer includes the structure shown in Formula 4. Formula 4, wherein R5, R6, R7, and R8 are each independently selected from alkyl and monooxane alkyl groups.

7. The method for preparing the organosilicon resin composition according to claim 6, characterized in that, The difunctional alkoxysilane includes at least one of the structures shown in Formula 5-1, 5-2, and 5-3: 、 、 ； R1, R2, R3, and R4 are each independently selected from alkyl groups and monooxane alkyl groups; The trifunctional alkoxysilane has the structure shown in Formula 6: Formula 6 Among them, R 11 R 12 R 13 R 14 Each is independently selected from alkyl groups and monooxane-alkyl groups; The tetrafunctional alkoxysilane has the structure shown in Formula 7: Formula 7 Among them, R 21 R 22 R 23 R 24 Each is independently selected from alkyl and monooxane alkyl.

8. The method for preparing the organosilicon resin composition according to claim 6, characterized in that, The organic solvent includes one or more of alcohol solvents, alkane solvents, and aromatic solvents; The acid catalyst includes at least one of inorganic acids and organic acids, wherein the organic acid includes one or more of trifluoromethanesulfonic acid, solid acid, acetic acid, formic acid, and propionic acid; The inorganic acid includes one or more of hydrochloric acid, sulfuric acid, and phosphoric acid; The reaction temperature is 50~80℃, and the reaction time is 1~5h; The post-processing to obtain the organosilicon resin composition after the reaction includes the following steps: after the reaction, the organic phase is separated into layers, the pH of the organic phase is adjusted to 6-8, washed, dried, and distilled under reduced pressure to obtain the organohydrogen polysiloxane.

9. Chip mounting material for semiconductor optical devices, comprising an organosilicon resin composition prepared by any one of claims 1-5 or any one of claims 6-8.

10. An optical semiconductor device, characterized in that, It uses the chip mounting material as described in claim 9.

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