Preparation method of planar semiconductor device composite film layer

Abstract

The invention discloses a preparation method of a planar semiconductor device composite film layer. The preparation method comprises the following steps: S1, placing a semiconductor plate in a processing chamber; s2, introducing a first diluent gas into the processing chamber, wherein the first diluent gas is a combined gas of helium and nitrogen; s3, introducing a radio frequency alternating electric field into the processing chamber to generate plasma; s4, reaction gas is introduced into the processing chamber, the reaction gas is decomposed, a first film layer is deposited on the semiconductor plate, and the reaction gas is acetylene or propylene; and S5, argon is introduced into the first diluent gas to form second diluent gas, the second diluent gas is combined gas of helium and argon, and the reaction gas is acted by the second diluent gas to deposit a second film layer on the first film layer. According to the preparation method of the composite film layer of the planar semiconductor device, the carbon film with higher adhesion is obtained, the problem of interlayer separation of the semiconductor device is avoided, and the protection effect on the semiconductor device is better.

Description

Technical Field

[0001] This invention relates to the field of integrated circuit manufacturing technology, and in particular to a method for preparing a composite film layer for a planar semiconductor device. Background Technology

[0002] Currently, PECVD film deposition technology is commonly used to form a film layer on the surface of silicon carbide devices to protect the silicon carbide surface.

[0003] PECVD, short for Plasma Enhanced Chemical Vapor Deposition, is a method for preparing semiconductor thin films and other thin films by using glow discharge to ionize the substrate in a deposition chamber and then performing a chemical reaction deposition on the substrate.

[0004] Specifically, the steps include the following:

[0005] 1. Place the substrate in the substrate processing chamber;

[0006] 2. Introduce the diluent gas into the processing chamber. The diluent gas is argon (Ar) or a combination of argon (Ar) and helium (He).

[0007] 3. Introducing radio frequency to generate stable plasma;

[0008] 4. C2H2 / C3H6 is introduced into the processing chamber to begin film deposition. At this time, the reaction temperature is 400℃, the pressure is 5.5 Torr, the radio frequency power is 850W, the flow rate of helium in the dilution gas is 180 sccm, the flow rate of argon is 2150 sccm, and the flow rate of acetylene in the reaction gas is 115 sccm.

[0009] 5. The reaction byproducts are removed by pump.

[0010] When using this method to deposit films on the surface of planar silicon carbide devices, interlayer separation problems arise when the film thickness exceeds 1 μm, manifesting as 1) edge warping or detachment; and 2) intrafilm bubbles. These problems limit the upper limit of film thickness for planar silicon carbide devices, making it impossible to meet the functional requirements of high-film-thickness applications. Summary of the Invention

[0011] To address the problems existing in the prior art, this application provides a method for preparing a composite film layer for a planar semiconductor device. During the first deposition of the film layer, argon gas in the dilution gas is removed to avoid insufficient adhesion of the film layer when it is thick due to the bombardment effect of argon gas during the deposition process. The resulting first film layer has good adhesion to the surface of the semiconductor device. Then, a second film layer is deposited on the first film layer as a substrate, and finally a composite film layer with a thickness greater than 1 μm is obtained.

[0012] To address the aforementioned technical problems, this invention discloses a method for preparing a composite film layer for a planar semiconductor device, comprising the following steps:

[0013] S1. Place the semiconductor board in the processing chamber. The semiconductor board is a planar semiconductor board, and the semiconductor board is a silicon substrate or a silicon carbide board. The processing chamber is a plasma chamber.

[0014] S2. Introduce the first dilution gas into the processing chamber. The first dilution gas is a combination of helium and nitrogen.

[0015] S3. Introduce an alternating radio frequency electric field into the processing chamber to generate plasma;

[0016] S4. Introduce a reactive gas into the processing chamber. The reactive gas decomposes and deposits a first film layer on the semiconductor plate. The reactive gas is acetylene or propylene.

[0017] S5. Argon is introduced into the first dilution gas, and the supply of nitrogen is stopped to form a second dilution gas. The second dilution gas is a combination of helium and argon. The reaction gas is deposited on the first film layer by the action of the second dilution gas.

[0018] In a preferred embodiment, the volume ratio of the first dilution gas to the reaction gas is 10:1 to 35:1.

[0019] In a preferred embodiment, the flow rate of helium in the first dilution gas is 500 sccm-4000 sccm, the flow rate of nitrogen is 100 sccm-1000 sccm, and the flow rate of acetylene is 30 sccm-500 sccm.

[0020] As a preferred embodiment, the acetylene flow rate is 65-100 sccm.

[0021] In a preferred embodiment, the flow rate of helium in the second dilution gas is 100 sccm-1000 sccm, the flow rate of argon is 500 sccm-4000 sccm, and the flow rate of acetylene is 30 sccm-500 sccm.

[0022] As a preferred embodiment, the flow rate of argon in the second dilution gas is 1400 sccm-1800 sccm, and the flow rate of acetylene is 70-180 sccm.

[0023] In a preferred embodiment, the radio frequency of the radio frequency alternating electric field is 13.56MHz, the radio frequency power of the radio frequency alternating electric field is 100W-1500W, and the pressure is 3torr-6torr.

[0024] As a preferred embodiment, the film-forming temperature is 200-500°C.

[0025] As a more preferred embodiment, the film-forming temperature is 400°C.

[0026] In a preferred embodiment, the thickness ratio of the first film layer to the second film layer is 1:19 to 1:99.

[0027] In a preferred embodiment, the sum of the thicknesses of the first film layer and the second film layer is 1 μm-2 μm.

[0028] In a preferred embodiment, after depositing the first film layer, the process further includes a step of removing reaction byproducts from the processing chamber to keep the surface of the first film layer clean.

[0029] Beneficial effects:

[0030] (1) The method for preparing a planar semiconductor device composite film layer of the present invention obtains a carbon film with stronger adhesion, avoids the problem of interlayer separation between the semiconductor device and the film layer, and provides better protection for the semiconductor device.

[0031] (2) The method for preparing a planar semiconductor device composite film layer of the present invention has good adhesion between the first film layer and the semiconductor device, and a second film layer is deposited on the basis of the first film layer. The resulting composite film layer has the advantages of high film formation efficiency and high adhesion, and has a wide range of application value.

[0032] (3) The method for preparing a composite film layer for a planar semiconductor device of the present invention has a significant effect on improving film adhesion and ensuring film formation stability in high film thickness scenarios of 1μm-2μm, thus meeting the application requirements in high film thickness scenarios.

[0033] The concept, specific structure and technical effects of the present invention will be further described below in conjunction with the accompanying drawings to fully understand the purpose, characteristics and effects of the present invention. Attached Figure Description

[0034] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0035] Figure 1 This is a product image showing a film layer peeling problem obtained using existing film-forming methods.

[0036] Figure 2 This is a product image showing a film layer with bubble problems obtained using existing film-forming methods.

[0037] Figure 3This is a graph showing the effects of various factors on deposition rate and surface stress.

[0038] Figure 4 This is a comparison chart showing the changes in coating stress under different dilution gas conditions.

[0039] Figure 5 This is a graph showing the trend of deposition rate as a function of C2H2 flow rate.

[0040] Figure 6 This is a graph showing the deposition rate as a function of RF power.

[0041] Figure 7 This is a graph showing the trend of deposition rate as a function of pressure.

[0042] Figure 8 This is a graph showing the trend of deposition rate as a function of Ar flow rate.

[0043] Figure 9 This is a graph showing the trend of deposition rate as a function of the total flow rate of Ar / He / C2H2 gas.

[0044] Figure 10 This is a product image of the film obtained by the method for preparing a planar semiconductor device composite film of the present invention.

[0045] Wherein: 1-silicon carbide plate, 2-first film layer, 3-second film layer. Detailed Implementation

[0046] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0047] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, the term "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0048] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0049] If an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0050] Silicon-based devices and silicon carbide devices are commonly used semiconductor devices. In order to protect semiconductor devices, a protective layer needs to be coated on the surface of the semiconductor device. The existing coating method is PECVD, which uses C2H2 / C3H6 as the reaction gas and argon (Ar) or a combination of argon (Ar) and helium (He) as the dilution gas. C2H2 / C3H6 decomposes and generates an amorphous carbon film on the substrate surface.

[0051] The following uses silicon carbide as an example:

[0052] 1. Place the substrate in the substrate processing chamber. The substrate here is a silicon carbide plate.

[0053] 2. Introduce the diluent gas into the processing chamber. The diluent gas is argon (Ar) or a combination of argon (Ar) and helium (He).

[0054] 3. Introducing radio frequency to generate stable plasma;

[0055] 4. Introduce C2H2 / C3H6 into the processing chamber to begin film deposition;

[0056] 5. The reaction byproducts are removed by pump.

[0057] Existing coating methods use argon (Ar) or a mixture of argon (Ar) and helium (He) as the diluent gas. However, when the film thickness exceeds 1 μm, the stress becomes excessive, making the film highly susceptible to delamination from the silicon carbide surface. This manifests as edge warping or detachment, such as… Figure 1As shown; on the other hand, the problem of intramembrane bubbles occurs, such as Figure 2 As shown.

[0058] To solve the above problems while keeping the diluent gas constant, the inventors of this application made the following attempts:

[0059] 1) The reaction temperature was adjusted and reduced by 75°C in the existing coating method. Under the condition that other conditions remain unchanged, when the coating thickness reaches 2μm, the problem of layer splitting still occurs.

[0060] 2) Extending the time for introducing the radio frequency alternating electric field to 45s still resulted in the layer splitting problem.

[0061] 3) The radio frequency power was changed from using high frequency alone to adding 50W of low frequency on the basis of the original high frequency, which caused electrical sparks during the lamination process.

[0062] 4) Adjust the acetylene flow rate. The acetylene flow rate was increased by 15 sccm, which caused an electric spark during the coating process.

[0063] It is evident that, while keeping the diluent gas constant, conventional adjustments to the process parameters in existing coating methods not only fail to solve the layer splitting problem but may even lead to electrical sparks.

[0064] In addition to the layer splitting problem, in practical applications, the deposition rate also needs to be considered. If the deposition rate is too low, the production cycle will be long and the production cost will be too high.

[0065] The inventors of this application investigated the specific effects of pressure, reaction chamber spacing, reaction temperature, He flow rate, radio frequency power, Ar flow rate, C3H6 / C2H2 flow rate, and film thickness on deposition rate and surface stress, and summarized the results as follows: Figure 3 The inventors of this application attempted to solve the layer splitting problem that occurs in carbon films with a thickness exceeding 1 μm by adjusting process parameters based on existing coating methods, but all attempts failed.

[0066] Repeated studies have revealed that the adhesion of carbon films to the substrate surface of planar silicon carbide devices is related to the adhesion efficiency of reactive gas atoms. Higher adhesion efficiency means carbon atoms are more easily adsorbed onto the silicon carbide device surface, resulting in better film adhesion and higher device stability and yield. Existing technologies use dilution gases containing argon (Ar). Ar exhibits a strong bombardment effect during deposition, leading to insufficient adhesion to form a stable bond with the silicon carbide surface, even with thicker films. The presence of argon may be a key reason for interlayer delamination.

[0067] The inventors attempted to replace Ar with nitrogen, with the diluent gas consisting of He and nitrogen. In the existing coating method, the reaction temperature is 400℃, the pressure is 5.5 Torr, the radio frequency power is 850W, the flow rate of helium in the diluent gas is 180 sccm, the flow rate of argon is 2150 sccm, and the flow rate of the acetylene reaction gas is 115 sccm. ， At this point, argon is replaced with nitrogen, resulting in a helium flow rate of 2150 sccm and a nitrogen flow rate of 180 sccm, while other parameters remain unchanged. Taking the acquisition of a 2µm thick carbon film as an example, the coating stress under different dilution gas conditions is as follows: Figure 4 As shown. From Figure 4 As can be seen, after replacing argon in the dilution gas with nitrogen, the coating stress is greatly reduced, and there is no interlayer separation problem between the film and silicon carbide.

[0068] However, when the dilution gas does not contain argon for film deposition, the deposition rate is... The deposition rate is relatively low, and it takes a long time to obtain a 2μm film, resulting in a long film formation cycle and high production costs.

[0069] Therefore, replacing the existing method with the above method still has problems. The inventors of this application propose a two-step method for thin film deposition: First, a first film layer is deposited in a diluent gas environment without argon; second, based on the first film layer, a second film layer is deposited in a diluent gas environment containing argon. The second film layer is uniformly and densely attached to the first film layer. The resulting composite film layer solves the interlayer separation problem and has high deposition efficiency.

[0070] This application, based on existing coating conditions (reaction temperature 400℃, pressure 5.5 Torr, RF power 850W, helium flow rate 180 sccm, argon flow rate 2150 sccm, acetylene flow rate 115 sccm), deposits a first film layer and a second film layer. During the deposition of the first film layer, argon is replaced with nitrogen, resulting in a helium flow rate of 2150 sccm and a nitrogen flow rate of 180 sccm. Other conditions are essentially the same as for the deposition of the second film layer (the deposition of the second film layer uses the same coating conditions as described above). The thickness ratio of the first film layer to the second film layer is limited to 1:20, with a total thickness of 2 μm. The effect of changing the reaction conditions on the deposition rate is investigated, and the results are as follows: Figures 5-10 As shown. It should be noted that the corresponding reaction conditions were changed simultaneously with the same numerical value during the deposition of the first and second film layers. Figure 5 For example, the effect of changing the C2H2 flow rate on the deposition rate of the composite film was investigated. In this case, the C2H2 flow rate was exactly the same during the deposition of the first and second films; only the C2H2 flow rate was adjusted, while other reaction conditions remained unchanged. Similarly, Figures 6-10All of these reflect the effect of a single factor change on the deposition rate when other reaction conditions remain unchanged.

[0071] The deposition rate here is the average rate during the deposition of the composite film, from... Figures 5-10 It can be seen that the deposition rate of the composite film is significantly higher than that of the single film under Ar-free conditions (higher than 100%). In addition, since the second film layer is deposited on the basis of the first film layer, the layer splitting problem of the first film layer has been solved. The resulting composite film layer mainly considers the deposition rate problem. By observing the above-obtained coating layers, no layer splitting was observed, and the requirements for film uniformity and refractive index were met.

[0072] This invention provides a method for preparing a composite film layer for a planar semiconductor device, comprising the following steps:

[0073] S1. Place the semiconductor board in the processing chamber. The semiconductor board is a planar semiconductor board, which is a silicon substrate or silicon carbide board 1. The processing chamber is a plasma chamber or a PECVD standard chamber.

[0074] Planar silicon substrate / silicon carbide plate 1 refers to a silicon substrate / silicon carbide plate 1 with a flat surface and basically no grooves.

[0075] S2. Introduce the first dilution gas into the processing chamber. The first dilution gas is a combination of helium and nitrogen.

[0076] The first dilution gas is a mixture of helium and nitrogen, which can maintain a stable plasma and film deposition environment. The flow rate of helium in the first dilution gas is 500 sccm-4000 sccm, and the flow rate of nitrogen is 100 sccm-1000 sccm. Preferably, the flow rate ratio of helium to nitrogen in the first dilution gas is 25:1.

[0077] S3. Introduce an alternating radio frequency electric field into the processing chamber to generate plasma.

[0078] Radio frequency (RF) was introduced before film deposition. The RF frequency was 13.56 MHz, and the RF power of the alternating electric field was 100 W-1500 W, with a pressure of 3 torr-6 torr. The significance of introducing RF before film deposition is to create a stable film deposition environment.

[0079] S4. Introduce a reactive gas into the processing chamber. The reactive gas decomposes and deposits the first film layer 2 on the semiconductor plate. The film formation temperature is 200-500℃. The reactive gas is acetylene or propylene. The preferred film formation temperature is 400℃.

[0080] The reactant gas is introduced into the processing chamber. The flow rate of the first dilution gas should be greater than that of the reactant gas, but the flow rate of helium in the first dilution gas should not be too high. The volume ratio of the first dilution gas to the reactant gas is 10:1-35:1, the flow rate of helium is 500 sccm-4000 sccm, the flow rate of nitrogen is 100 sccm-1000 sccm, and the flow rate of acetylene is 30 sccm-500 sccm. Preferably, the flow rate of acetylene is 65-100 sccm.

[0081] The reaction involved is: C2H2 / C3H6 + He + N2 ---> C(-H) + C x H y +H2.

[0082] After the first film layer 2 is deposited, the byproducts generated by the chemical reaction are pumped away to maintain the cleanliness of the processing chamber and the surface of the semiconductor device.

[0083] S5. Argon is introduced into the first dilution gas, and the supply of nitrogen is stopped to form a second dilution gas. The second dilution gas is a combination of helium and argon. The reaction gas is deposited on the first film layer 2 by the action of the second dilution gas to form a second film layer 3.

[0084] The second dilution gas differs from the first dilution gas in that it introduces argon and removes nitrogen, while using the first dilution gas as a base. The second dilution gas and the reactant gas need to maintain a certain flow rate match. Since Ar atoms have a large mass, the molar flow rate of Ar should not be too high, otherwise it will cause significant ion bombardment, leading to problems with surface uniformity. In this case, the volume ratio of the second dilution gas to the reactant gas is 10:1-30:1. The flow rate of helium in the second dilution gas is 100-1000 sccm, the flow rate of argon is 500-4000 sccm, and the flow rate of acetylene is 30-500 sccm. Preferably, the flow rate of argon in the second dilution gas is 1400-1800 sccm, and the flow rate of acetylene is 70-180 sccm.

[0085] During film formation, the radio frequency system provides a high-frequency alternating electromagnetic field. The reactant gas and the second diluent gas decompose under stable electromagnetic energy and a temperature of 200-500°C, breaking down into ions, atoms, and charged groups. These decomposition products adsorb onto the surface of the first film layer 2 to form nuclei, and then grow laterally and longitudinally to form the second film layer 3. Preferably, the film formation temperature is 300°C.

[0086] In a preferred embodiment, the thickness ratio of the first film layer 2 to the second film layer 3 is 1:19 to 1:99.

[0087] In a more preferred embodiment, the sum of the thicknesses of the first film layer 2 and the second film layer 3 is 1 μm-2 μm.

[0088] After depositing the second film layer 3, the process also includes a step of removing reaction byproducts from the processing chamber to keep the surface of the second film layer 3 clean.

[0089] Example 1

[0090] A method for preparing a composite film layer for a planar silicon carbide device includes the following steps:

[0091] S1. Place silicon carbide plate 1 in the processing chamber. Silicon carbide plate 1 is a planar silicon carbide plate. The processing chamber is a plasma chamber or a PECVD standard chamber.

[0092] S2. The first dilution gas is introduced into the processing chamber. The first dilution gas is a combination of helium and nitrogen. The flow rate of helium in the first dilution gas is 2850 sccm, and the flow rate of nitrogen is 150 sccm.

[0093] S3. Introduce an alternating radio frequency electric field (provided by a radio frequency generator) into the processing chamber to generate plasma. The radio frequency is 13.56MHz, the radio frequency power of the alternating electric field is 800W, and the pressure is 6torr.

[0094] S4. A reactive gas is introduced into the processing chamber, where it decomposes and deposits a first film layer 2 on the silicon carbide plate 1. After the deposition of the first film layer 2 is completed, the byproducts generated by the chemical reaction are removed by a pump to maintain the cleanliness of the processing chamber and the surface of the silicon carbide device. The film formation temperature is 400℃, the reactive gas is acetylene, and the acetylene flow rate is 65 sccm.

[0095] S5. Argon is introduced into the first dilution gas to remove nitrogen, forming a second dilution gas, which is a combination of helium and argon. The reaction gas is acted upon by the second dilution gas to deposit the second film layer 3 on the first film layer 2. At this time, the film formation temperature is 400℃, the helium flow rate is 115 sccm, the argon flow rate is 2150 sccm, and the acetylene flow rate is 180 sccm.

[0096] The schematic diagram of the composite film layer for the planar silicon carbide device obtained by the above method is shown below. Figure 10 The thickness ratio of the first film layer 2 to the second film layer 3 is 1:25, and the sum of the thicknesses of the first film layer 2 and the second film layer 3 is 2 μm. No layer separation problem was observed.

[0097] The method of the present invention deposits a first film layer 2 between a silicon carbide plate 1 and a second film layer 3. Although the thickness of the first film layer 2 is much smaller than that of the second film layer 3, the adhesion problem is well solved, and the deposited film layer is prevented from falling off.

[0098] The thickness of the deposited film is determined by the deposition time. By controlling the deposition time, the thickness ratio of the first film layer to the second film layer can be well controlled.

[0099] As shown above, acetylene is used as the reaction gas for depositing the first and second film layers. In practical applications, the reaction gas can be replaced with propylene, and the resulting technical effect is comparable to that of acetylene.

[0100] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0101] The embodiments described above are merely examples of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these modifications and improvements all fall within the scope of protection of the present invention.

Claims

1. A method for preparing a composite film layer for a planar semiconductor device, characterized in that, Includes the following steps: S1. Place the semiconductor board in the processing chamber. The semiconductor board is a planar semiconductor board, and the semiconductor board is a silicon substrate or a silicon carbide board. The processing chamber is a plasma chamber. S2. Introduce the first dilution gas into the processing chamber. The first dilution gas is a combination of helium and nitrogen. S3. Introduce an alternating radio frequency electric field into the processing chamber to generate plasma; S4. Introduce a reactive gas into the processing chamber. The reactive gas decomposes and deposits a first film layer on the semiconductor plate. The reactive gas is acetylene or propylene. S5. Argon is introduced into the first dilution gas, and the supply of nitrogen is stopped to form a second dilution gas. The second dilution gas is a combination of helium and argon. The reaction gas is deposited on the first film layer by the action of the second dilution gas.

2. The method for preparing a composite film layer for a planar semiconductor device according to claim 1, characterized in that, The volume ratio of the first dilution gas to the reaction gas is 10:1 to 35:

1.

3. The method for preparing a composite film layer for a planar semiconductor device according to claim 1, characterized in that, The flow rates of helium in the first dilution gas are 500 sccm-4000 sccm, nitrogen is 100 sccm-1000 sccm, and acetylene is 30 sccm-500 sccm.

4. The method for preparing a composite film layer for a planar semiconductor device according to claim 3, characterized in that, The flow rate of acetylene is 65-100 sccm.

5. The method for preparing a composite film layer for a planar semiconductor device according to claim 1, characterized in that, The flow rates of helium in the second dilution gas are 100-1000 sccm, argon is 500-4000 sccm, and acetylene is 30-500 sccm.

6. The method for preparing a composite film layer for a planar semiconductor device according to claim 1, characterized in that, The flow rate of argon in the second dilution gas is 1400-1800 sccm, and the flow rate of acetylene is 70-180 sccm.

7. The method for preparing a composite film layer for a planar semiconductor device according to claim 1, characterized in that, The radio frequency of the radio frequency alternating electric field is 13.56MHz, the radio frequency power of the radio frequency alternating electric field is 100W-1500W, and the pressure is 3torr-6torr.

8. The method for preparing a composite film layer for a planar semiconductor device according to claim 1, characterized in that, The film-forming temperature is 200-500℃.

9. The method for preparing a composite film layer for a planar semiconductor device according to claim 1, characterized in that, The thickness ratio of the first film layer to the second film layer is 1:19-1:

99.

10. The method for preparing a composite film layer for a planar semiconductor device according to claim 1, characterized in that, The sum of the thicknesses of the first and second films is 1 μm to 2 μm.

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