Broadband electrically tunable substrate integrated ridge waveguide equalizer
By combining a single ridge waveguide structure with varactor diodes and MESFETs, a broadband electrically tunable substrate integrated ridge waveguide equalizer was designed, which solves the problems of non-adjustable frequency, large size, complex adjustment, and sensitivity of equalization value in the existing technology, and realizes dynamic adjustment of frequency and equalization amount and bandwidth expansion.
CN120854874APending Publication Date: 2025-10-28UNIV OF ELECTRONICS SCI & TECH OF CHINA
Patent Information
- Application Number
- CN202510958591.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-11
- Publication Date
- 2025-10-28
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Figure CN120854874A_ABST
Abstract
The invention belongs to the technical field of microwaves, and particularly relates to a broadband electrically tunable substrate integrated ridge waveguide equalizer which comprises a substrate integrated ridge waveguide body and a microstrip line. The substrate integrated ridge waveguide body sequentially comprises a first metal layer, a first dielectric layer, a semi-solidified layer, a second dielectric layer and a second metal layer from top to bottom, and the semi-solidified layer, the second dielectric layer and the second metal layer synchronously etch through boat-shaped grooves; the rectangular area forming the boat-shaped groove forms a transmission channel of the ridge waveguide, and the two triangular areas are used for realizing tapered gradual transition of the microstrip line and the substrate integrated ridge waveguide; by adjusting the parameters of the resistor R and the capacitor C arranged on the first metal layer, the electric tuning function of the center frequency and the balance quantity is achieved, and the problem that an amplitude-frequency characteristic curve in a circuit is not flat is effectively solved; resistance equal-proportion amplification is carried out on the value range of the control voltage through the MESFETs arranged on the first metal layer, and the problems that the balance amount is sensitive to voltage change and is not easy to regulate and control are solved.
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Citation Information
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